TW201413853A - Manufacturing device and manufacturing method of semiconductor device - Google Patents

Abstract

This invention provides a manufacturing device of semiconductor device capable of reducing the position deviation of an adhesive layer in relation to a semiconductor chip of thinner thickness. The manufacturing device of this invention includes a supply unit used to provide sheet material in cylinder shape, and an adhesive unit used to have the pulled part from the sheet material adhere to a wafer and have the unused part of the sheet material around the wafer adhere to a ring for prolonging the sheet material. The sheet material includes a substrate, a peeling-assistant layer on the substrate, and an adhesive layer on the peeling-assistant layer. The adhesive unit perform adhesion in a manner that the angle between the basic direction of a direction recognition mark on the wafer and the direction of pulling the sheet material out is 15 to 75 degree.

Description

Manufacturing device of semiconductor device and method of manufacturing semiconductor device Related application

This application has the priority of applying the Japanese Patent Application No. 2012-218800 (application date: September 28, 2012) and Japanese Patent Application No. 2013-94679 (application date: April 26, 2013) as the basic application. right. This application contains the entire contents of the basic application by reference to these basic applications.

The present invention relates to a manufacturing apparatus of a semiconductor device and a method of manufacturing the semiconductor device.

A circuit of a plurality of semiconductor devices is formed on one side of the wafer. An adhesive layer is formed on the other side of the wafer.

There is a method of manufacturing a semiconductor device in which a wafer is divided into individual semiconductor wafers by using a dicing blade, and an adhesive layer is also divided from the wafer side and the wafer. This manufacturing method can reduce the positional shift of the semiconductor wafer and the adhesive layer.

On the other hand, there is a manufacturing method of a semiconductor device which is generally referred to as Dicing Before Grinding: when a wafer is divided into individual semiconductor wafers, a dicing blade is used to form a groove in the wafer, and thereafter, from the wafer. Grinding is performed until the thickness of the groove is reached from the back surface of the circuit. This manufacturing method can make the thickness of the semiconductor wafer thin.

Since the dicing is performed after the dicing is performed to divide the semiconductor wafer into the back surface, it is not possible to provide an adhesive layer on the back surface of the wafer in advance. Since the above two manufacturing methods cannot be combined, it is difficult to reduce the positional deviation of the adhesive layer with respect to the semiconductor wafer having a small thickness. shift.

The present invention provides a semiconductor device manufacturing apparatus and a method of manufacturing a semiconductor device which can reduce the positional deviation of an adhesive layer with respect to a thin semiconductor wafer.

A manufacturing apparatus for a semiconductor device according to an embodiment of the present invention includes: a supply unit for supplying a sheet wound into a roll shape; and an attaching portion which is wound into a roll shape at the supply portion a portion of the sheet that is pulled out is attached to the wafer, and a ring for stretching the sheet is attached to a blank portion of the sheet around the wafer; the sheet includes a substrate and an adhesive layer. Further, the attaching portion is attached so that the angle formed by the direction in which the direction of the wafer is set as the reference and the direction in which the sheet is pulled out is 15 to 75 degrees.

A method of manufacturing a semiconductor device according to the embodiment is characterized in that the sheet is drawn from a sheet wound into a roll shape, and a plurality of semiconductor wafers are attached to a portion of the sheet that is pulled out. And attaching a ring to the blank portion of the sheet around the wafer, placing the wafer on the platform, and expanding the platform in a direction in which the wafer is attached to the surface of the wafer a distance between the rings, whereby the adhesive of the sheet is separated into a shape corresponding to the semiconductor wafer, and each of the semiconductor wafer and the adhesive layer are peeled off from the sheet; and the sheet comprises a substrate And a release promoting layer provided on the substrate and an adhesive layer provided on the release promoting layer.

100‧‧‧ wafer

101‧‧‧blade

102‧‧‧ slots

103‧‧‧Protected sheet

104‧‧‧ grinding tools

105‧‧‧DAF

105-2‧‧‧Excess DAF

106‧‧‧ Tape

107‧‧‧ Ring

108‧‧‧Substrate

109‧‧‧ peeling promotion layer

110‧‧‧ platform

111‧‧‧ wafer

112‧‧‧Frame

113‧‧‧Supply components

113-2‧‧‧Excess supply components

114‧‧‧ Pull out direction

115‧‧‧Loading Department

116‧‧‧ Direction Identification Department

117‧‧‧High elastic modulus tape

117‧‧‧ Direction

201‧‧‧Supply Department

202‧‧‧ Attachment

203‧‧Recycling Department

204‧‧‧Support Department

Ex‧‧‧distance

1 is a flow chart showing a method of manufacturing a semiconductor device.

2 is a perspective view showing a manufacturing process of a semiconductor device.

3 is a perspective view showing a manufacturing process of a semiconductor device.

4 is a perspective view showing a manufacturing process of a semiconductor device.

Fig. 5 is a perspective view showing a manufacturing process of the semiconductor device.

Fig. 6 is a perspective view showing a manufacturing process of the semiconductor device.

Fig. 7 is a perspective view showing a manufacturing process of the semiconductor device.

Fig. 8 is a cross-sectional view showing the manufacturing process of the semiconductor device.

Fig. 9 is a perspective view showing a manufacturing process of the semiconductor device.

Figure 10 is a cross-sectional view showing the manufacturing process of the semiconductor device.

Fig. 11 is a perspective view showing a manufacturing process of the semiconductor device.

Fig. 12 is a view showing a manufacturing apparatus.

Figure 13 is a cross-sectional structural view of a supply member.

Fig. 14 is a view showing a manufacturing process of the supply member.

Fig. 15 is a view showing a manufacturing apparatus.

Figure 16 is a view showing a manufacturing apparatus.

Figure 17 is a view showing a manufacturing apparatus.

Figure 18 is a graph showing the relationship between the elongation of the supply member and the tensile strength.

Figure 19 is a plot of distance versus angle.

Hereinafter, an embodiment of a method of manufacturing a semiconductor device and a manufacturing apparatus using the same will be described with reference to FIGS. 1 to 11. In the respective embodiments, the same components are denoted by the same reference numerals, and the description thereof will not be repeated. However, the drawings are schematically represented, and the relationship between the thickness and the plane size, the ratio of the thicknesses of the layers, and the like are different from those of the actual one. In addition, the term indicating the direction of the up-and-down direction indicates that the direction in which the circuit formation surface side of the semiconductor substrate described below is set to the upper side is different from the actual direction based on the direction of the gravitational acceleration.

First, a method of manufacturing the semiconductor device of the present embodiment will be described. A method of manufacturing a semiconductor device is shown in FIG. The manufacturing process of the semiconductor device is shown in FIGS. 2 to 11.

First, as shown in FIG. 2, a groove 102 is formed on the wafer 100 using the blade 101 along a dicing line secured between the integrated circuits of the wafer 100 in which a plurality of integrated circuits are formed (cutting step) 1). At this time, the groove 102 is formed from the side (front side) side of the wafer 100 which is shallow in thickness and on which the integrated circuit is formed. In other words, in the stage of the dicing step 1, the integrated circuits are separated by grooves, but are connected to each other on the side (back surface) side opposite to the front surface.

Next, as shown in FIG. 3, a protective sheet 103 is provided on the front surface of the wafer 100 on which the grooves 102 are formed. The protective sheet 103 is provided to protect the integrated circuit from dust contamination such as grinding debris. Moreover, the protective sheet 103 is provided in order to be held in the position of each of the integrated circuits which are separated after the back surface polishing. As the protective sheet, a film which has both good adhesion and good peelability can be used, and the film is used to prevent intrusion of a contaminant such as vinyl chloride or polyolefin as a main component.

Then, as shown in FIG. 4, the back surface of the wafer 100 is polished using the grinding tool 104 such as a rotating grindstone or a polishing pad to which the slurry is supplied (back grinding step 2). The polishing of the wafer 100 proceeds until the remaining thickness of the wafer 100 reaches at least the depth of the trench 102 formed in the cutting step 1. As shown in FIG. 5, the wafer 100 polished to the depth of the groove 102 is in a state in which each of the integrated circuits is separated.

As shown in FIG. 6, the wafer 100 in a state in which each of the integrated circuits is separated is placed on a tape 106 having a die attach film (DAF 105) provided on the front surface (wafer mounting step 3). . A ring 107 on the periphery of the wafer 100 of the tape 106 carries a ring 107 for supporting and transporting the wafer 100. In the wafer mounting step 3, the DAF 105 is attached to the back side of the wafer 100. As the DAF 105, for example, an adhesive sheet mainly composed of an epoxy resin, a polyimide, or an acrylic resin can be used. The tape 106 can be used as a laminated film obtained by providing a peeling-promoting layer (RL) 109 on a substrate 108 which is easily elongated, such as vinyl chloride or polyolefin as a main component, and the peeling-promoting layer (RL) 109 is made of polytetrafluoroethylene. A fluororesin or an epoxy resin-based violet that hardens when exposed to ultraviolet light and becomes easily peeled off. External hardening resin, etc.

As shown in FIG. 7, the protective sheet 103 is removed from the wafer 100 loaded on the tape 106. The wafer 100 after the protective sheet 103 is removed is in a state in which the front side is exposed and the DAF 105 is attached to the back side. Further, at this stage, as shown in FIG. 8, the wafer 100 is in a state in which each of the integrated circuits is separated, but the DAF 105 is not separated into a shape corresponding to each integrated circuit, and becomes a crystal. The shape of the circle 100 is substantially the same as the shape of the whole.

As shown in FIGS. 8 and 9 and 10, the back surface side of the wafer 100 placed on the tape 106, that is, the surface side of the substrate 108 is placed on the stage 110. After the wafer 100 is placed on the stage 110, the ring 107 is moved relative to the wafer 100 in a direction away from the back side by a distance Ex (extension step 4). When the ring 107 is moved while the wafer 100 is placed on the stage 110, tension is applied to the tape 106, and the tape 106 is elongated in such a manner that the distance between the integrated circuits becomes larger.

If tension is applied to the tape 106, tension is also applied to the DAF 105 attached to the tape 106. The DAF 105 is attached to the wafer 100. Here, the wafer 100 is made of a semiconductor material such as germanium or sapphire or gallium arsenide. When the elastic modulus is 10 times or more, the semiconductor material is less likely to be stretched than the tape 106 or the DAF 105. That is, most of the tension applied to the DAF 105 acts on the elongation of the scribe line portion between the integrated circuits. As a result, when the movement of the ring 107 exceeds a certain fixed limit, the DAF 105 is partially broken at the scribe line and separated into substantially the same portion (the wafer 111 described below) divided by the scribe line (strictly speaking, relative to The shape of a slightly larger similar shape divided by the cutting path.

In the above extension step 4, it is preferred that the elongation at break of the DAF 105 is preferably 130% or less, more preferably 50% or less. The reason for this is that the Φ300 mm wafer 100 in which the semiconductor wafer is divided into squares having a side length of 20 mm is extended by 30 mm in a state of being attached to the tape 106 with the DAF 105 (the ring 107 is moved to the back side by Ex = 30 mm). In the case, the slit width (distance between semiconductor wafers) of 30 μm was calculated to be expanded to 130%. At this point, assume tape 106 Stretch equally. Further, in consideration of the conveyance of the wafer 100 by the automatic wafer transfer apparatus after the step 4, the distance Ex (the movement of the ring 107 to the back side) is preferably 12 mm or less. The reason for this is that at this time, the expansion of the cutting line in the above assumption is 50%. However, when the elongation at break is less than 1%, the possibility that the DAF 105 is broken when the supply portion 201 is pulled out in the drawing direction 114 becomes high, which is not suitable.

Fig. 12 is a view showing a manufacturing apparatus. By providing a high elastic modulus tape 117 to the periphery of the semiconductor wafer 100 of the tape 106, the outer circumference of the wafer 100 is prevented from being preferentially elongated, so that the semiconductor elements can be uniformly enlarged in the plane of the wafer 100. The high elastic modulus tape 117 at this time preferably has an inner diameter of more than Φ305 mm and an outer diameter of 340 mm or less. The modulus of elasticity is preferably higher than the modulus of elasticity of the synthetic elastic modulus of DAF 105 and tape 106 (the apparent elastic modulus of the laminate).

After the DAF 105 is separated, each of the wafers 100 (wafer 111) separated from each of the integrated circuits for each of the integrated circuits and the DAF 105 are peeled off from the tape 106 in units of one set, and the wafer 111 is attached via the DAF 105. In frame 112 (installation step 5). After attaching the wafer 111 to the frame 112, the frame 112 is heated using an oven or a heating plate to firmly fix the wafer 111 and the frame 112.

According to the method of manufacturing the semiconductor device described above, even when the dicing step 1 is performed before the back surface polishing step 2, the DAF 105 may be provided on the back surface of the wafer 111 in substantially the same shape as the outer shape of the wafer 111. Further, since the position of the DAF 105 with respect to the wafer 111 is separated by self-alignment along the dicing street in a state where the DAF 105 is attached to the wafer 100, the accuracy is high. Also, the step particularly necessary in order to set the DAF 105 with higher positional accuracy is only the extension step 4. The extension step 4 is performed only once for the wafer 100. For example, when 300 wafers 111 are placed on each wafer and 3 seconds are used in the stretching step, the time required to add a special step is an average of 0.01 sec per wafer 111, and the mass productivity is high. .

The DAF 105 and the tape 106 used in the method of manufacturing the above semiconductor device are performed. Description. As shown in FIG. 13, in the tape 106, a peeling promotion layer 109 is formed on one surface of the base material 108. On the surface side of the peeling-promoting layer 109 of the tape 106, the DAF 105 is provided in advance before the wafer 100 is placed.

The tape 106 can be formed by laminating a sheet-like peeling-promoting layer 109 and a sheet-like DAF 105 on a sheet-like base material 108 as shown in FIG. The base material 108, the peeling-promoting layer 109, and the DAF 105 are drawn in a direction in which the material is wound in a roll shape, and the base material 108 is superposed on the peeling-promoting layer 109 and the DAF 105. For example, the base material 108 after the superposition of the heated roller pair is applied to the peeling-promoting layer 109 and the DAF 105 to apply pressure thereto. The bonded base material 108, the peeling-promoting layer 109, and the DAF 105 are again taken up as a roll-shaped supply member (sheet) 113 in the direction of the drawing direction 114.

Further, at this time, the DAF 105 is not particularly necessary for the blank portion other than the portion on which the wafer 100 and the ring 107 are placed. Therefore, as shown in FIG. 14, it can be removed as the excess DAF 105-2 before attaching the wafer 100.

An embodiment of a manufacturing apparatus to which the above-described semiconductor device manufacturing method is applied will be described. A portion of a manufacturing apparatus to which a method of manufacturing a semiconductor device is applied is illustrated in FIG. The supply unit 201 that supplies the drum-shaped supply member 113 is provided in the manufacturing apparatus. The supply unit 201 pulls the supply member 113 in the direction of the pull-out direction 114 and supplies it.

A attaching portion 202 for attaching the wafer 100 and the ring 107 is provided at a position where the DAF 105 of the supply member 113 that is pulled out is provided. A mounting portion 115 for placing the wafer 100 and the ring 107 is provided on the attaching portion 202.

After the wafer 100 and the ring 107 are attached to the supply member 113 by the placing unit 115, the excess supply member 113-2 located around the ring 107 is recovered by the collecting unit 203.

In order to attach the wafer 103 and the ring 107 to the supply member 113, a support portion 204 for supporting the supply member 113 is provided. The support portion 204 reduces the distance in order to attach the mounting portion 115 toward the supply member 113, and supports the supply member 113 for final attachment.

Here, the direction recognition unit 116 is provided on the wafer 100. The direction identifying unit 116 is It is provided in such a manner as to identify the direction of the wafer 100 with respect to the direction in which one of the dicing tracks having two directions is used as a reference.

The attaching unit 202 is attached so that the angle formed by the direction recognizing unit 116 and the pull-out direction 114 are 15 to 75 degrees. In order to attach the angle formed by the direction recognizing unit 116 and the drawing direction 114 to 15 to 75 degrees, for example, as shown in FIG. 16, the crystal may be placed on the mounting portion 115. After the circle 100 and the ring 107 are rotated by the direction in which the direction recognized by the direction identifying unit 116 and the drawing direction 114 are 15 to 75 degrees, the mounting portion 115 is held while the wafer 100 is placed. Then, it is adhered to the supply member 113.

Alternatively, as shown in FIG. 17, after the ring 107 is placed on the placing portion 115, the angle formed by the direction recognizing portion 116 and the direction of the drawing direction 114 may be 15 to 75 degrees. The wafer 100 is placed on the mounting portion 115 in the state of the quasi-direction, and then adhered to the supply member 113.

The angle between the direction identifying portion 116 and the drawing direction 114 based on one of the dicing streets provided on the wafer 100 will be described with reference to FIGS. 18 and 19. Fig. 17 is a view showing the relationship between the elongation rate in the drawing direction 114 of the supply member 113 and the tensile supply member 113 in the direction 117 orthogonal to the drawing direction, and the tensile strength which is the force applied at this time.

As shown in FIG. 18, the relationship between tensile strength and elongation in the pull-out direction 114 and the direction 117 is different. When the anisotropic supply member 113 is elongated in the extending step 4, its elongation amount is different from the direction 117 in the drawing direction 114. The reason for this is considered to be that, in the manufacturing step of the supply member 113, the substrate 108 wound in a roll shape and the peeling-promoting layer 109 or the DAF 105 are pulled in the drawing direction to apply pressure thereto.

Therefore, as shown in FIG. 19, the extending step 4 is performed while changing the angle formed by the direction recognized by the direction identifying unit 116 and the drawing direction 114, and the separation state of the DAF 105 and the state of the peeling promoting layer 109 are performed. Conduct an evaluation. When the distance Ex is 2.5 mm, the angle recognized by the direction recognizing portion 116 and the pull-out direction 114 are formed. How the degree changes, the DAF 105 cannot be completely separated in one of the faces of the wafer 100. On the other hand, regardless of the angle formed by the direction recognized by the direction identifying unit 116 and the drawing direction 114, the DAF 105 can be well separated when the distance Ex is 3.0 mm.

When the angle between the direction recognized by the direction identifying unit 116 and the drawing direction 114 is 0 degrees and 90 degrees, the DAF 105 can be well separated when the distance Ex is 3.5 mm, but the peeling promoting layer 109 was also separated.

Further, when the angle recognized by the direction recognizing unit 116 and the drawing direction 114 are 15 degrees and 75 degrees, the DAF 105 can be well separated when the distance Ex is 3.0 mm to 4.0 mm. When the distance Ex is 5.0 mm, although the DAF 105 can be well separated, the peeling promoting layer 109 is also separated. That is, for the angle of 15 to 75 degrees, the distance Ex can be manufactured with a wide margin.

Further, when the angle formed by the direction recognizing unit 116 and the direction of the drawing direction 114 is 30 to 60 degrees, the DAF 105 can be well separated even when the distance Ex is set to 9.0 mm. And the peeling promoting layer 109 is not separated. That is, for an angle of 30 to 60 degrees, the distance Ex can be manufactured with a wider margin.

According to the manufacturing apparatus described above, similarly to the manufacturing method of the semiconductor manufacturing apparatus, even when the cutting step 1 is performed before the back surface polishing step 2, the DAF 105 may be disposed on the wafer in substantially the same shape as the outer shape of the wafer 111. The back of the 111. Further, since the position of the DAF 105 with respect to the wafer 111 is separated by self-alignment along the dicing street in a state where the DAF 105 is attached to the wafer 100, the accuracy is high. Further, since the DAF 105 is set with high positional accuracy, the step particularly required is only the extension step 4. The extension step 4 is performed only once for the wafer 100.

Further, when the angle between the direction recognized by the direction identifying unit 116 and the drawing direction 114 is 26 to 75 degrees, it can be manufactured with a wide margin.

Although some embodiments of the present invention have been described, they are not limited to the implementations. The configurations and various conditions shown in the drawings are presented as examples, and are not intended to limit the scope of the invention. The present invention may be embodied in other specific forms and various modifications, substitutions and changes may be made without departing from the scope of the invention. The invention or its modifications are intended to be included within the scope of the invention and the scope of the invention.

100‧‧‧ wafer

105‧‧‧DAF

106‧‧‧ Tape

107‧‧‧ Ring

111‧‧‧ wafer

112‧‧‧Frame

Claims (6)

A method of manufacturing a semiconductor device, characterized in that a sheet is drawn from a sheet wound into a roll shape, and a wafer on which a plurality of semiconductor wafers are attached is attached to a portion of the sheet that is pulled out And attaching a ring to the blank portion of the sheet around the wafer, placing the wafer on the platform, and expanding the platform and the ring in a direction in which the wafer is attached to the surface of the wafer a distance separating the adhesive layer of the sheet into a shape corresponding to the semiconductor wafer, and separating each of the semiconductor wafer and the adhesive layer from the sheet; and the sheet comprises a substrate, a peeling-promoting layer provided on the substrate and the adhesive layer provided on the peeling-promoting layer; and the attaching portion is formed in a direction of a roller in a direction in which the direction identifying portion provided on the wafer is used as a reference The angle formed by the direction in which the sheet is pulled out is 15 to 75 degrees. A manufacturing apparatus for a semiconductor device, comprising: a supply unit for supplying a sheet wound in a roll shape; and an attaching portion which is wound from the supply portion into the sheet which is wound into a roll shape a portion of the material is attached to the wafer, and a ring for stretching the sheet is attached to a blank portion of the sheet around the wafer; and the sheet includes a substrate and an adhesive layer; The attaching portion is attached so that the angle formed by the direction identifying portion provided on the wafer as a reference and the direction in which the sheet-like sheet is pulled out is 15 to 75 degrees. The apparatus for manufacturing a semiconductor device according to claim 2, wherein the attaching portion includes: a placing portion for placing the wafer and the ring; and a supporting portion for aligning the crystal to the mounting portion The circle is attached to the above-mentioned ring to the close distance of the above-mentioned sheet, and the above-mentioned sheet is supported in the drawing direction. The apparatus for manufacturing a semiconductor device according to claim 3, wherein the attaching portion mounts the wafer on the mounting portion in a direction in which the direction identifying portion is a reference and a direction in which the angle is 15 to 75 degrees. Attach the above sheets. The manufacturing apparatus of the semiconductor device according to claim 3, wherein the mounting portion is in a state in which the wafer is placed such that the direction identifying portion is a reference direction and the angle is 15 to 75 degrees Rotate down. A method of manufacturing a semiconductor device, characterized in that a sheet is drawn from a sheet wound into a roll shape, and a wafer on which a plurality of semiconductor wafers are attached is attached to a portion of the sheet that is pulled out And attaching a ring to the blank portion of the sheet around the wafer, placing the wafer on the platform, and expanding the platform and the ring in a direction in which the wafer is attached to the surface of the wafer a distance separating the adhesive layer of the sheet into a shape corresponding to the semiconductor wafer, and separating each of the semiconductor wafer and the adhesive layer from the sheet; and the sheet comprises a substrate, A release promoting layer provided on the substrate and an adhesive layer provided on the release promoting layer.