TW201412625A - Vapor deposition device and vapor deposition method - Google Patents

Abstract

To best reduce the vapor deposition time in which the vapor deposition source is wasted in an evaporation device for use in the horizontally evaporated organic EL film. A vapor deposition device for forming an organic EL film, which comprises a robotic conveyance chamber, in which a vacuum robot is arranged; two vapor deposition chambers, which are respectively connected to the robotic conveyance chamber; an indexing workbench, which can carry two substrates and is horizontally received in the vapor deposition chambers; a rotating device, which makes the indexing workbench to rotate in the horizontal direction; a vapor deposition source, which is arranged under the indexing workbench and is movable in the horizontal direction. As the vacuum robot conveys in and out a substrate between the vapor deposition chambers and the robotic conveyance chamber to subject the one of the two substrates carried on the indexing workbench to vapor deposition with the vapor deposition source, the vacuum robot is used to move the other one of the substrates from the vapor deposition chambers to the robotic conveyance chamber, on the other hand, a new substrate is moved from the robotic conveyance chamber to the vapor deposition chambers. After completing the vapor deposition, the indexing workbench is rotated.

Description

Vapor deposition device and evaporation method

The present invention relates to a vapor deposition device and a vapor deposition method, and more particularly to a vapor deposition device and a vapor deposition method suitable for vapor deposition of an organic EL film.

An example of a conventional vapor deposition device for forming an organic EL film is described in Patent Documents 1 and 2. In these publications, in order to provide an economical organic EL element manufacturing apparatus having a small material loss, it is possible to arrange two or more substrates in a vacuum chamber. When the first substrate is vapor-deposited by the vapor deposition material deposited by the vapor deposition source, the other substrate is carried into the vacuum chamber, and the second substrate is vapor-deposited by the vapor deposition material. The first substrate is carried out by the vacuum chamber. Alternatively, during the vapor deposition of the first substrate, the positioning of the other substrate is completed, and the second substrate is vapor-deposited by the same vapor deposition source for vapor deposition of the first substrate, and the first substrate is The vacuum chamber is moved out. In Patent Document 2, the vapor deposition surface of the substrate is placed on the upper side and transported during the transfer period.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] JP-A-2010-86956

[Patent Document 2] JP-A-2010-62043

In the vacuum vapor deposition method which is an effective method for producing an organic EL element, in order to maintain stable vapor deposition, it is necessary to control the vapor deposition rate of the holding material fixed by the vapor deposition source. Therefore, a method such as resistance heating or induction heating is used to heat the vapor deposition material and perform physical vapor deposition (PVC). In order to stabilize the vapor deposition rate, a fixed time is required, and steaming of the material from the evaporation source cannot be simply realized. The plating is controlled like ON/OFF off. Moreover, in order to fix the vapor deposition rate of the material, it is necessary to carry out vapor deposition from time to time, and vapor deposition is also performed in the case of carrying in or out of the substrate which is not required for vapor deposition, and in these steps, vapor deposition is performed. The material evaporated by the source does not help at all for the evaporation step, but only material loss.

In the above-described Patent Document 1 or Patent Document 2, in the vertical vapor deposition method in which the substrate is vertically stood in the vacuum chamber for vapor deposition, a plurality of substrates can be accommodated in the vacuum chamber, and one of the substrates can be carried in during vapor deposition. Move out or locate any of the other substrates. However, even if it is described in the methods of Patent Documents 1 and 2, after the vapor deposition of one of the substrates is completed, when the other substrate to be loaded is vapor-deposited, the vapor deposition source is moved from the position of one of the substrates to The position of the other substrate is such that during the period of the movement, the vapor deposition source is shielded by the shield and the evaporation of the substrate or the substrate is prevented, and the mask or the like is vapor-deposited.

Among them, since organic EL materials are expensive, it is hoped that Avoid waste as much as possible. In the above-described Patent Documents 1 and 2, the waste of the vapor deposition material can be greatly reduced, and it is desirable to reduce the loss of the organic EL material which causes an increase in the product price. In addition, if the amount of material lost is increased, the frequency of exchange of materials will become higher, and the problem that the operation time of the device will decrease will also occur.

Further, the contents described in Patent Documents 1 and 2 are those in which the substrate is vertical and vapor-deposited, and the horizontal vapor deposition by vapor deposition on the lower side of the substrate is not considered.

The present invention has been made in view of the above-described problems of the prior art, and aims to reduce the vapor deposition time of the wasted vapor deposition source in the vapor deposition apparatus for forming a horizontal vapor deposition type organic EL film. Other objects of the present invention are to improve the effective operation rate of the vapor deposition source and to reduce material loss, and to reduce the manufacturing cost of the organic EL element, in addition to the above object.

A feature of the present invention which achieves the above object is a vapor deposition apparatus for forming an organic EL film, comprising: a robot transfer chamber in which a vacuum robot is disposed; and one or two vapor deposition chambers connected to the robot transfer chamber via a gate valve; a plurality of substrates on which a plurality of substrates can be placed and horizontally housed in the vapor deposition chamber; and a rotating device that rotates the indexing table in a horizontal direction; and the vapor deposition source is disposed below the indexing table One of the plurality of substrates can be moved in a horizontal direction; the vacuum robot can be moved in the horizontal direction between the vapor deposition chamber and the robot transfer chamber. The substrate is carried out, and the evaporation is carried out by the vapor deposition source to be placed in the above-mentioned indexing work. During the period of one of the plurality of substrates in the plurality of substrates, the other vacuum substrate is carried out from the vapor deposition chamber to the robot transfer chamber, and a new substrate is transferred from the robot transfer chamber to the steam. Plating chamber.

Further, in the above-described rotation device, the rotational driving force of the motor disposed outside the vapor deposition chamber is transmitted to the indexing table housed in the vapor deposition chamber via the magnetic fluid sealing device, and is placed on the indexing table. The back-drafting surface side of the substrate of the indexing table is provided with a plate for lifting and lowering the workpiece, and may have a cylinder disposed outside the vapor deposition chamber, a bellows connected to one end of the cylinder, and a lifting shaft passing through A floating joint connected to the inner side of the bellows is connected to the bellows and disposed in the vapor deposition chamber, and the socket portion is provided at a lower end portion of the lifting shaft and can be fitted into the workpiece lifting portion.

Further, the indexing table can mount two substrates, and it is preferable to form a vapor deposition position for performing vapor deposition by the vapor deposition source on one side farther from the robot transfer chamber, and to transfer from the robot. The chamber is closer to one side, and the vacuum robot is used to form the loading. It is preferable to carry out the receiving position of the substrate.

Another feature of the present invention that achieves the above-described object is a vapor deposition method for an organic EL film-forming substrate, which uses a vacuum robot disposed in a robot transfer chamber to perform a plurality of substrates disposed in a vapor deposition chamber attached to the robot transfer chamber. Evaporation and loading. Carrying out; using the vacuum robot to place a plurality of substrates horizontally on the arranged indexing table, and moving the vapor deposition source under the substrate and arranged relative to the substrate and reversing One of the plurality of substrates is vapor-deposited, and the vacuum robot is used to carry out the other one of the plurality of substrates while being ejected to the robot transfer chamber, and a new substrate is carried into the vapor deposition chamber and placed on the substrate. The indexing table terminates the vapor deposition of the substrate in the vapor deposition, rotates the indexing table in the horizontal direction, and positions the unvaporized substrate at the position of the vapor deposition source, and then repeats the above steps.

In this feature, when the substrate is carried into the vapor deposition chamber or when the substrate is carried out to the robot transfer chamber, the vapor deposition surface of the substrate is inserted into the workpiece lifting portion disposed on the opposite surface side via the bellows. Preferably, it is preferable that the substrate is raised or lowered from the indexing table to the indexing table at a socket portion disposed at a front end of the lifting shaft of the cylinder outside the vapor deposition surface.

According to the present invention, in the vapor deposition device for forming a horizontal vapor deposition type organic EL film, a plurality of substrates can be placed in the same vacuum chamber, and other substrates can be carried in and out to a vacuum while vapor deposition of one substrate. Since the chamber exchanges a plurality of substrate positions immediately after the vapor deposition of the substrate is completed, the vapor deposition time of the wasted vapor deposition source can be reduced as much as possible. Further, the effective operation rate of the vapor deposition source can be increased and the material loss can be reduced, so that the manufacturing cost of the organic EL element can be reduced.

100‧‧‧Organic EL evaporation pipeline

101~108‧‧‧Robot transfer room

111~119‧‧‧Receiving room

121a~128b‧‧‧vapor deposition chamber

130~137‧‧‧Group (vapor deposition unit)

141a~18b‧‧‧ gate valve

211‧‧‧Deposition position

212‧‧‧Receiving location

213‧‧ ‧ Indexing Workbench

213b‧‧‧ openings

214a, 214b‧‧‧ switching action (reverse)

215‧‧ ‧ Interference area for the workbench

216‧‧‧Receiving location

221‧‧‧Reflux source return position

222‧‧‧The direction of evaporation source

223‧‧‧Reflux source return position

231a~238b‧‧‧ gate valve

401‧‧‧vacuum robot

402‧‧‧Robot

403‧‧‧Machining arm

403a‧‧‧ upper arm

403b‧‧‧ Lower arm

405‧‧‧Motor

413‧‧‧ hood

422‧‧‧Motor

423‧‧‧ bracket

424‧‧‧ pulley

425‧‧‧ conveyor belt

426‧‧‧ pulley

427‧‧‧ bearing

428‧‧‧Rotary axis

429‧‧‧Rotating arm

429a‧‧ hole

431‧‧‧ cylinder

432‧‧‧ bracket

433‧‧‧Floating joint

434‧‧‧ lifting shaft

434a‧‧‧Sockets

434b‧‧‧ditch

434c‧‧‧ card stop

435‧‧‧The belly

436‧‧‧Direct motion guide

437‧‧‧Working lift

437a‧‧‧through department

437b‧‧‧ hooks

437c‧‧‧ head

441‧‧‧ atmosphere box

442‧‧‧Direct motion guide

442a‧‧‧Guide

442b‧‧‧rail

443‧‧‧Base

444‧‧‧Motor

445‧‧‧Connector

446‧‧‧Magnetic fluid seal

447‧‧‧ Gears

448‧‧‧ rack

449‧‧‧ wiring. Piping

450, 450a~450c‧‧‧Wiring arm

S0~S2‧‧‧Substrate

VDS‧‧·vapor deposition source

[Fig. 1] An embodiment of an organic EL evaporation line of the present invention Floor plan.

Fig. 2 is a plan view schematically showing a part of a vapor deposition device having an organic EL vapor deposition line as shown in Fig. 1.

Fig. 3 is a plan view for explaining a state in which a substrate in the vapor deposition device shown in Fig. 2 is moved.

Fig. 4 is a partial plan view showing a vapor deposition apparatus having an organic EL vapor deposition line as shown in Fig. 1.

Fig. 5 is a front cross-sectional view showing a part of the vapor deposition device shown in Fig. 4.

Fig. 6 is an enlarged view of a portion T of Fig. 5;

Fig. 7 is an exploded perspective view showing the vicinity of an indexing table housed in a vapor deposition chamber as shown in Fig. 5;

Fig. 8 is an enlarged view of a U portion of Fig. 7.

Fig. 9 is a cross-sectional view showing a portion V of Fig. 7;

[Embodiment]

Hereinafter, an embodiment in which the organic EL vapor deposition line of the present invention and the vapor deposition device thereof are provided will be described with reference to the drawings. Fig. 1 is a plan view showing an organic EL evaporation line 100 of an active matrix type generally used. 2 and 3 are views showing one of the vapor deposition devices 130 to 137 including a plurality of the organic EL vapor deposition lines 100. 2 is a plan view showing one of the vapor deposition chambers 121a to 128b of the both sides of the robot transfer chambers 101 to 108 and the robot transfer chambers 101 to 108; FIG. 3 is a plan view for explaining a movement state of the substrates S0 to S2 in the vapor deposition chamber 121a and the robot transfer chamber 101 taken out.

However, in the case of producing an organic EL element having an organic EL deposited film, it is necessary to have not only an luminescent material layer (EL layer) but also an electrode layer separating the EL layer or a hole injection layer and a transport layer formed on the anode. A wide variety of films, such as an electron injecting layer formed on the cathode. Therefore, a plurality of vapor deposition materials are used and a desired layer is formed, and each layer is formed by vapor-depositing each of the vapor deposition materials and forming a vapor deposition film layer on the substrate, stacking the layers in multiple layers, and finally completing the organic EL element. .

Specifically, when an active matrix type organic EL element is produced, a hole injection layer (HIL), a hole transport layer (HTL), a red light-emitting layer (R), and a TFT substrate (backplane) are formed. The green light-emitting layer (G), the blue light-emitting layer (B), the electron transport layer (ETL), the electron injecting groove (EIL), and the cathode (cathode) are sequentially stacked one on another and vapor-deposited. This specific example is schematically shown in FIG. Further, in order to improve the characteristics of the organic EL element, any layer may be added or omitted as needed.

In the present embodiment, the organic EL vapor deposition line 100 is formed by depositing the same vapor deposited film in the left and right vapor deposition chambers (for example, 121a and 121b), so that eight vapor deposited film layers can be produced. Gate valves 141a to 148b are disposed on the rear side surfaces of the robot transfer chambers 101 to 108, and the reception chamber 111 is disposed on the flow side of the gate valve 141a. The reception chamber 112 is disposed between the gate valve 141b and the gate valve 142a. The reception rooms 113 to 118 are disposed between the gate valves 142b to 148a. The flow side is arranged under the gate valve 148b. Grant room 119.

In each of the robot transfer chambers 101 to 108, a vacuum robot described in detail below is housed. As the left and right sides of each of the robot transfer chambers 101 to 108, vapor deposition chambers 121a to 128b are disposed in the direction perpendicular to the reception chambers 111 to 119 via the gate valves 231a to 238b.

In this way, the organic EL vapor deposition line 100 is configured to be partitioned into vapor deposition chambers 121a to 128b disposed on the left and right sides of the robot transfer chambers 101 to 108 by using the gate valves 141a to 148b attached to the respective reception chambers 111 to 119. 8 groups (vapor deposition device). For example, the first vapor deposition device 101 includes the robot transfer chamber 101 and the left and right vapor deposition chambers 121a and 121b, and the other vapor deposition chambers 122a to 128b or the robot transfer chambers 102 to 108 can be closed by closing the gate valves 141a and 141b. Separate.

In the organic EL vapor deposition line 100 shown in FIG. 1, the receiving chamber 111 located at the upper end position of FIG. 1 is supplied with an annealing step or a plasma cleaning liquid step which is a step before vapor deposition, and the like. Substrate. On the other hand, the substrate that has undergone a series of vapor deposition film forming steps is transferred from the lower receiving chamber 119 to the next step. Further, in the vapor deposition step, all of the robot transfer chambers 101 to 108 and the vapor deposition chambers 121a to 128b shown in FIG. 1 can be evacuated to a vacuum of 10 ^-6 Pa by a vacuum pump (not shown). Until the pressure.

Initially, the substrate S0 supplied to the receiving room 111 is transferred to the robot transfer chamber 101 by the transfer device after the gate valve 141a is opened. Next, the gate valve 141a is closed, and the gate valve 231a or 231b provided on either the left and right sides of the robot transfer chamber 101 is opened, and is disposed in the robot transfer chamber. The vacuum robot in 101 is introduced into the vapor deposition chamber 121a (121b) on the side of the opened gate valve 231a (231b). The substrate S0 that has been vapor-deposited in the vapor deposition chamber 121a (or 121b) is taken out by the vapor deposition chamber 121a (121b) by the vacuum robot disposed in the robot transfer chamber 101 in order to perform vapor deposition of the lower layer. Further, in order to form the next vapor deposition layer, the gate valve 141b is opened, and the transfer device transports the substrate S0 to the reception chamber 112. Hereinafter, the same order is repeated, and the substrate S0 introduced into the receiving room 119 is transferred to the next step.

Next, two substrates S0 and S1 are disposed in a vapor deposition chamber 121a having a vacuum chamber as a feature of the present invention, and vacuum deposition of the substrate and loading of the substrate are described with reference to FIGS. 2 and 3. The step of moving out into the vapor deposition chamber 121a. In Fig. 2 and Fig. 3, only the main constituent elements are shown analogously. In the vapor deposition step, only one of the vapor deposition chambers 121a is extracted in the vapor deposition device 130 for producing the first layer. Even in the other vapor deposition devices 131 to 137 and the vapor deposition chamber 121b on the opposite side, the vapor deposition of the substrate and the substrate are carried in the same manner. Move out.

In the vapor deposition chamber 121a, an indexing table 213 in which two substrates are arranged side by side is disposed. The substrate position on the left side far from the robot transfer chamber 101 is the vapor deposition position 211, and the substrate position on the right side closer to the robot transfer chamber 101 is the take-up position 212. The indexing table 213 is rotatable 180 degrees to the left and right, and performs a reverse operation as the switching operations 214a and 214b when the substrate is carried in and carried out to the vapor deposition chamber 121a. Even if the index table 213 is rotated left and right, one side far from the robot transfer chamber 101 is also the vapor deposition position 211. Rotate 180 degrees by indexing table 213, steaming An indexing table interference region 215 is formed in the plating chamber 121a.

The vapor deposition position 211 side is described below in detail, and a vapor deposition source VDS is disposed below the indexing table 213 with respect to the substrate. The vapor deposition source VDS vapor-deposits the vapor deposition material on the lower surface side of the substrate. The vapor deposition source VDS reciprocates in the front-rear direction 222 of the vapor deposition chamber 121a by using the vicinity of the rear end portion of the index table 213 as the vapor deposition source folding positions 221 and 223.

In the case of using the indexing table 213 in FIG. 3, the other substrate S0 is carried out while the substrate S1 is being vapor-deposited, and the case where the new substrate S2 is carried in will be described. In the first step (A), preparation for vapor deposition of the substrate S1 is started. The vapor-deposited substrate S0 (indicated by hatching) is positioned at the receiving position 212, and the substrate S1 before vapor deposition is positioned at 211. At this time, the vapor deposition source VDS is positioned at the vapor deposition source folding position 221 near the front end of the substrate S1.

Next, in the step (B), the vapor deposition source VDS is moved to the vapor deposition source moving direction 222, and a vapor deposition film is formed on the surface of the substrate S1. On the other hand, the substrate S0 in which the vapor deposition film formed in the vapor deposition chamber 121a is formed is carried out by the vacuum robot (not shown) disposed in the robot transfer chamber 101, and is carried out to the robot transfer chamber 101 by the vapor deposition chamber 121a. Here, in the robot transfer chamber 101, a substrate receiving position 216 is formed, and a substrate S0 on which a vapor deposited film is formed is disposed at the substrate receiving position 216. Then, the substrate S0 is transported to the next step by a transfer device (not shown) of the robot transfer chamber 101.

In step (C), by the robot transfer chamber as the new substrate S2 The transfer device of 101 is placed at the substrate receiving position 216 instead of the substrate S0 that has been vapor-deposited. During this period, the vapor deposition source VDS continues to vaporize the substrate S1. The vacuum robot of the robot transfer chamber 101 carries the new substrate S2 into the receiving position 212 in the vapor deposition chamber 121a. Thereby, the replacement of the substrate S0 and the substrate S2 is completed. Then, it is waited for the film formation in the vapor deposition chamber 121a of the substrate S1 to be completed.

Next, in step (D), after the film formation on the substrate S1 in the vapor deposition chamber 121a is completed, the indexing table 213 is rotated to either the right or left direction, and rotated 180 degrees 214b to the right side in FIG. . At this time, the vapor deposition source VDS is located at the position of the vapor deposition source folding position 223 on the rear end side. After the indexing table 213 is rotated by 180°, it returns to the same state as the step (A). Among them, only the positions of the vapor deposition source VDS are different. Then, the vapor deposition source VDS is moved to the vapor deposition source moving direction 222 to start vapor deposition on the substrate S2. At the same time, the substrate S1 located at the substrate receiving position 212 is carried out by the vapor deposition chamber 121a using a vacuum robot. Hereinafter, the operations of the above steps (A) to (D) are repeated.

The time irrespective of the vapor deposition of the substrate surface substantially in the timing chart described above refers only to the time during which the index table 213 is rotated, and the vapor deposition efficiency is improved. In particular, since the rotation angle of the index table 213 is determined by the number of pieces of the substrate of the index table 213, the rotation angle of the index table 213 can be determined in advance, and the rotation can be remarkably reduced. time. For example, the angle of rotation can also be mechanically determined by a mechanism such as a ratchet.

Next, use Figure 4 to Figure 9 for the specific evaporation chamber and robot. The structure of the transfer room will be described. 4 is a plan view of the vapor deposition device 130 including the robot transfer chamber 101 and the two vapor deposition chambers 121a and 121b, and the left vapor deposition chamber 121a and the robot transfer chamber 101 are partially shown in cross section. Moreover, FIG. 5 is a front view of the vapor deposition chamber 121a on the left side and the robot transfer chamber 101, and a part of the figure is shown in cross section. Fig. 6 is an enlarged view of a T portion in Fig. 5. Fig. 7 is an exploded perspective view of the periphery of the indexing table 213 housed in the vapor deposition chamber 121a. 8 and 9 are respectively an enlarged view of a U portion and a cross-sectional view of a V portion of Fig. 7.

Gate valves 231a and 231b are provided between the robot transfer chamber and each of the vapor deposition chambers 121a and 121b. In the robot transfer chamber 101, the substrate S1 (S0) is carried into the vapor deposition chamber 121a, and the vacuum robot 401 for moving the substrate S1 (S0) from the vapor deposition chamber 121 is disposed. The vacuum robot 401 has a robot arm 403 composed of an upper arm 403a and a lower arm 403b, and a cross-shaped robot 402 attached to an end portion of the robot arm 403. The vacuum robot 401 is driven by a motor 405 attached to a lower portion of the robot transfer chamber 101.

In FIG. 4, the robot arm 403 and the robot 402, which are indicated by the solid line, are in a state in which the substrate S0 is carried out from the vapor deposition chamber 121a, and the robot arm 403 is extended to the receiving position 212, and the robot arm 403 is indicated by a chain line. The robot 402 transports the substrate S0 to the delivery position 216 provided in the robot transfer chamber 101, and indicates that it is transferred to the state before the next step. Further, when the vacuum robot 401 is used in the vapor deposition chamber 121b on the right side, the robot arm 403 and the robot 402 are rotated by 180° to the shaft of the motor 405 in a state where the robot arm 403 is folded. Able to stabilize and maintain the substrate On the upper surface of the robot 401, a substrate holding mechanism is formed on the upper surface side of the robot 401.

As shown in FIG. 6, the substrate S1 is placed on the indexing table 213 via the mask frame 413, and the plate 411 is held on the upper surface of the substrate S1. Here, the cover frame 413 and the substrate S1 are positioned in advance using positioning marks (not shown), and the robot arm 403 is transported in this state.

In the vapor deposition chamber 121a, an indexing table 213 is disposed on the upper portion, and a vapor deposition source VDS is disposed on the lower portion. On the upper side of the vapor deposition source VDS, a plurality of openings (nozzles) are formed side by side in the left-right direction (the direction perpendicular to the moving direction 222 of the vapor deposition source VDS). In other words, in the vapor deposition source VSD, a luminescent material as a vapor deposition material is accommodated therein, and the luminescent material is ejected by a plurality of nozzles arranged in parallel. The vapor deposition material contained in the vapor deposition source VDS is controlled by heating, and is controlled so as to obtain a stable vapor deposition rate. Further, the additive is simultaneously heated and vapor-deposited as needed.

An atmosphere box 441 is disposed on the lower side of the vapor deposition source VDS. The atmosphere tank 441 and the vapor deposition source VDS are moved together to the moving direction 222 of the vapor deposition source VDS by the linear motion guide 442 attached to the bottom surface of the air tank 441. The linear motion guide 442 is constituted by a pair of guide members 442a and a guide rail 442b that can be directly moved on the guide member 442a. The guide rail 442b is fixed to the base 443 mounted on the vapor deposition chamber 121a. In order to move the vapor deposition source VDS and the air box 441, the motor 444 is housed inside the air box 441.

The output shaft of the motor 444 is coupled to the magnetic flow via a coupler 445 Body seal 446. The magnetic fluid seal 446 is used to seal the atmospheric tank 441 in the atmospheric state and the vapor deposition chamber 121a in the vacuum state. A gear 447 is attached to the front end of the magnetic fluid seal 446 on the vacuum side, and is engaged with a rack 448 fixed to the base 443 of the pair of guide rails 442b.

Therefore, the driving force of the motor 444 disposed on the atmosphere side is transmitted to the gear 447 via the magnetic fluid seal 446, and the guide 442a slides on the guide rail 442b by the engagement of the gear 447 with the rack 448. Thereby, the vapor deposition source VDS can be moved to the moving direction 222.

Wiring of motor 444, etc. The pipe 449 is held in the wiring arm 450 (450a to 450c) of the air box 441 in an airtight manner. Wiring arm 450 is for wiring. The pipe 449 is guided to the outside of the vapor deposition chamber 121a, and therefore has an opening open to the atmosphere on one end side. In FIG. 4, when the wiring arm 450 of the wiring arm 450 indicated by the broken line and the solid line is located at the position of the vapor deposition source folding position 221 on the distal end side, the wiring arm 450 indicated by the chain line is located at the rear end side. The position of the vapor deposition source folding position 223.

A substrate holding mechanism that holds the substrates S1 and S0 on the indexing table 213 is provided on the upper portion of the vapor deposition chamber 121a. The substrate holding mechanism is a mechanism for raising or lowering the substrate S0 (S1), the mask frame 413, and the pad 411 when the substrate S0 (S1) is carried into the vapor deposition chamber 121a or carried out of the vapor deposition chamber 121a. A mechanism for rotating the indexing table 213.

The mechanism for raising or lowering the substrate S0 (S1) or the like is fixed to the holder 423 provided on the outer surface of the vapor deposition chamber 121a, and has a motor 422 for driving the index table 213 and a rotation transmission mechanism for transmitting the power of the motor 422 ( 424, 425, 426), become the rotating shaft of the output shaft 428, even A flat rotating arm 429 is attached to the front end of the rotating shaft 428. The rotation transmission mechanism includes a pulley 424 attached to an output shaft of the motor 422, a conveyor belt wound around the pulley 424, and a pulley 426 attached to one end side of the rotating shaft 428. Further, the rotating shaft 428 is rotatably supported by a plurality of bearings 427.

As shown in FIG. 7, in the rotating arm 429, a hole 429a is formed in a portion corresponding to the central portion of each of the substrates S0 and S1, and is provided to be magnetically placed on the back side of each of the substrates S0 and S1. A workpiece lifting portion 437 at a central portion of the plate 411. As shown in FIG. 8, the workpiece lifting portion 437 has a head portion 437c, a hook portion 437b having a smaller diameter than the head portion 437c, and a penetration portion 437a formed in the hole 429a of the rotating arm 429.

As described above, the substrate S1 and the mask frame 413, and the substrate S0 and the mask frame 413 are respectively positioned in advance. In order to secure the vapor deposition surface at the time of vapor deposition on the substrate S1 or the like, an opening 213b having a slightly larger vapor deposition surface on the left and right contrast substrates S1 is formed in the indexing table 213. Between the pair of openings 213b, a pillar 213a is provided, and the pillar 213a is connected to the lower surface of the rotating arm 429. Therefore, a gap having a height corresponding to the pillar 213a is formed between the rotating arm 429 and the indexing table 213.

On the other hand, the mechanism for raising or lowering the workpiece formed by the substrate S0 (S1), the cover frame 413, the pad 411, and the like has a lifting shaft 434 that is locked to the upper surface side of the pad 411. The socket portion 434a of the workpiece lifting portion 437 is attached to the front end; the bellows 435 is attached to the opposite end of the lifting shaft; the floating joint 433 is fixed to the outer side of the bellows 435; the cylinder 431 is connected with the floating joint 433 and is fixed to the evaporation chamber. 121a Outer bracket 432. The bellows 435 seals the inside of the vapor deposition chamber 121a in which the vacuum is disposed and the atmosphere side of the cylinder 431. At the same time, the lifting shaft 434 can be moved up and down by the operation of the air cylinder 431. The lifting shaft 434 is guided by a linear motion guide 436 fixed to the vapor deposition chamber 121a.

The socket portion 434a attached to the front end of the lifting shaft 434 has a groove 434b extending in the horizontal direction as shown in Fig. 7, and is fitted to the head portion 437c of the workpiece lifting portion 437. Here, the shape of the upper surface of the head portion 437c of the workpiece lifting portion 437 is a rectangular shape in which one portion of the circle is cut in a parallel straight line (see Fig. 8). When the head portion 437c of the workpiece lifting portion 437 is fitted into the groove 434b, and the head portion 437c is rotated by 90 degrees with respect to the head portion 437c, the head portion 437c is locked to the locking portion 434c. Thereby, the substrate S0 (S1) can be raised and lowered by the linear motion of the air cylinder 431.

5 is a view showing a state in which the substrate S0 is positioned at the substrate receiving position 212, and the workpiece lifting portion 437 is used to raise the workpiece including the substrate S0 by the robot 402 or the workpiece lifting portion 437 is used to transfer the workpiece to the machine. The state before the hand 402.

In the present embodiment, while one of the two substrates placed in the vapor deposition chamber is vapor-deposited, the cylinder provided on the atmosphere side is driven, and the workpiece including the other substrate is lifted by the indexing table, and is lowered to be mounted. The robot at the front end of the vacuum robot is transferred. Further, the vacuum robot is driven and the other substrate is carried out from the vapor deposition chamber. Further, similarly, the vacuum robot is used to carry in the new substrate, and the cylinder is driven and lowered by the robot to the lifting and indexing table and positioned. Then, when one of the substrates is vapor-deposited, the motor is driven and the indexing table is rotated. Thereby, the substrate can be inserted almost uninterrupted Row evaporation.

101‧‧‧Robot transfer room

121a‧‧·vapor deposition chamber

130~137‧‧‧Vapor deposition unit

211‧‧‧Deposition position

212‧‧‧Receiving location

213‧‧ ‧ Indexing Workbench

214b‧‧‧Switching action (reverse)

216‧‧‧Receiving location

221‧‧‧Reflux source return position

222‧‧‧The direction of evaporation source

223‧‧‧Reflux source return position

231a‧‧‧ gate valve

S0~S2‧‧‧Substrate

VDS‧‧·vapor deposition source

Claims (10)

A vapor deposition device for vapor deposition of an organic EL film, comprising: a robot transfer chamber in which a vacuum robot is disposed; one or two vapor deposition chambers connected to the robot transfer chamber via a gate valve; and an indexing table; a plurality of substrates can be placed and horizontally housed in the vapor deposition chamber; and the rotating device rotates the indexing table in a horizontal direction; the vapor deposition source is disposed below the indexing table and opposite to the plurality of substrates One piece can be moved in the horizontal direction, and the vacuum robot is carried in the horizontal direction between the vapor deposition chamber and the robot transfer chamber. While the substrate is being carried out, a single substrate placed on the plurality of substrates of the indexing table is vapor-deposited by the vapor deposition source, and one of the other substrate substrates is carried out from the vapor deposition chamber to the robot transfer chamber by using the vacuum robot. On the other hand, a new substrate is carried into the vapor deposition chamber from the robot transfer chamber. The vapor deposition device according to claim 1, wherein the rotating device transmits a rotational driving force of a motor disposed outside the vapor deposition chamber to the indexing table housed in the vapor deposition chamber via a magnetic fluid sealing device. The vapor deposition device according to claim 1, wherein a plate having a workpiece lifting portion is disposed on a side of the reverse vapor deposition surface of the substrate placed on the indexing table, and the cylinder is disposed outside the vapor deposition chamber. a bellows connected to one end of the cylinder; the lifting shaft is connected to the bellows and disposed in the vapor deposition chamber via a floating joint connected to the inner side of the bellows; The portion is disposed at a lower end of the lifting shaft and can be embedded in the workpiece lifting portion. The vapor deposition device according to claim 2, wherein a plate having a workpiece lifting portion is disposed on a side of the reverse vapor deposition surface of the substrate placed on the indexing table, and the cylinder is disposed outside the vapor deposition chamber a bellows connected to one end of the cylinder; the lifting shaft is connected to the bellows and disposed in the vapor deposition chamber via a floating joint connected to the inner side of the bellows; the socket portion is disposed at the lower end of the lifting shaft and can be embedded Go to the aforementioned workpiece lifting section. The vapor deposition device according to claim 1, wherein the indexing table is capable of placing two substrates, and forming a vapor deposition caused by the vapor deposition source on a side farther from the robot transfer chamber of the robot transfer chamber. The vapor deposition position is formed on the side closer to the robot transfer chamber by the vacuum robot. Move out the receiving position of the substrate. The vapor deposition device according to claim 2, wherein the indexing table is capable of placing two substrates, and forming a vapor deposition position for performing vapor deposition by the vapor deposition source on a side farther from the robot transfer chamber On the side closer to the robot transfer chamber, the vacuum robot is used to form the carry-in. Move out the receiving position of the substrate. The vapor deposition device of claim 3, wherein the indexing table is capable of mounting two substrates, and forming a vapor deposition by performing the vapor deposition source on a side farther from the robot transfer chamber The plating position is on the side closer to the robot transfer chamber, and the vacuum robot is used to form the loading. Move out the receiving position of the substrate. The vapor deposition device according to claim 4, wherein the indexing table is capable of placing two substrates, and forming a vapor deposition position for performing vapor deposition by the vapor deposition source on a side farther from the robot transfer chamber On the side closer to the robot transfer chamber, the vacuum robot is used to form the carry-in. Move out the receiving position of the substrate. A vapor deposition method is a vapor deposition method for an organic EL film formation substrate, and a plurality of substrates disposed in a vapor deposition chamber attached to the robot transfer chamber are vapor-deposited and carried in using a vacuum robot disposed in a robot transfer chamber. Carrying out; characterized in that the plurality of substrates are horizontally placed on the arranged indexing table by using the vacuum robot, and the vapor deposition source disposed under the substrate and disposed relative to the substrate is moved and the plurality of substrates are moved One of the substrates is vapor-deposited, and the vacuum robot is used to eject the other substrate to the robot transfer chamber, and the new substrate is carried into the vapor deposition chamber and placed on the indexing work. After the vapor deposition of the substrate in the vapor deposition is completed, the stage is rotated in the horizontal direction, and the unvaporized substrate is positioned at the position of the vapor deposition source, and then the above steps are repeated. The vapor deposition method according to claim 9, wherein when the substrate is carried into the vapor deposition chamber or when the substrate is carried out to the robot transfer chamber, the vapor deposition surface of the substrate is placed on the object facing the opposite side via the bellows The lifting portion is embedded and connected to the vapor deposition surface The socket portion at the front end of the lifting shaft of the outer cylinder raises or lowers the substrate from the indexing table to the indexing table.