TW201409741A - Light emitting device - Google Patents

Light emitting device Download PDF

Info

Publication number
TW201409741A
TW201409741A TW101131643A TW101131643A TW201409741A TW 201409741 A TW201409741 A TW 201409741A TW 101131643 A TW101131643 A TW 101131643A TW 101131643 A TW101131643 A TW 101131643A TW 201409741 A TW201409741 A TW 201409741A
Authority
TW
Taiwan
Prior art keywords
light
illuminating
diode chip
transparent substrate
emitting device
Prior art date
Application number
TW101131643A
Other languages
Chinese (zh)
Other versions
TWI464908B (en
Inventor
Cheng-Hong Li
shi-you Ye
Ji-Zhi Pu
zhi-shu Huang
wei-gang Zheng
xi-ming Pan
Original Assignee
Formosa Epitaxy Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Formosa Epitaxy Inc filed Critical Formosa Epitaxy Inc
Priority to TW101131643A priority Critical patent/TWI464908B/en
Priority to US13/834,246 priority patent/US9166116B2/en
Priority to US13/845,160 priority patent/US9065022B2/en
Priority to CN2013202827433U priority patent/CN203322771U/en
Priority to CN2013202827772U priority patent/CN203277380U/en
Priority to CN201310191943.2A priority patent/CN103456728B/en
Priority to CN201610696438.7A priority patent/CN106252491A/en
Priority to CN201310191955.5A priority patent/CN103453357B/en
Priority to CN201310191944.7A priority patent/CN103456863B/en
Priority to CN2013202827664U priority patent/CN203300693U/en
Priority to CN2013202827950U priority patent/CN203277498U/en
Priority to CN2013202827787U priority patent/CN203325967U/en
Priority to CN201310191958.9A priority patent/CN103456869B/en
Priority to CN2013202827946U priority patent/CN203277485U/en
Priority to JP2013111835A priority patent/JP6367526B2/en
Priority to JP2013112370A priority patent/JP6504739B2/en
Priority to US13/903,998 priority patent/US20130320363A1/en
Priority to EP13169803.7A priority patent/EP2669947B1/en
Priority to KR1020130061002A priority patent/KR20130133696A/en
Priority to EP13169790.6A priority patent/EP2669946B1/en
Priority to DE202013012548.9U priority patent/DE202013012548U1/en
Priority to EP21186715.5A priority patent/EP3961706A1/en
Priority to EP21197696.4A priority patent/EP3951869A1/en
Priority to DE202013012729.5U priority patent/DE202013012729U1/en
Priority to EP18196452.9A priority patent/EP3454369A1/en
Priority to KR1020130061001A priority patent/KR102129533B1/en
Priority to EP18185878.8A priority patent/EP3415807B1/en
Priority to DE202013012707.4U priority patent/DE202013012707U1/en
Priority to DE202013012698.1U priority patent/DE202013012698U1/en
Priority to DE202013012711.2U priority patent/DE202013012711U1/en
Priority to DE202013012554.3U priority patent/DE202013012554U1/en
Priority to DE202013012509.8U priority patent/DE202013012509U1/en
Priority to US13/904,038 priority patent/US9123868B2/en
Priority to US14/089,708 priority patent/US9368483B2/en
Publication of TW201409741A publication Critical patent/TW201409741A/en
Priority to US14/218,869 priority patent/US9488321B2/en
Priority to US14/218,944 priority patent/US20180006199A9/en
Priority to US14/340,574 priority patent/US9711490B2/en
Application granted granted Critical
Publication of TWI464908B publication Critical patent/TWI464908B/en
Priority to US14/886,787 priority patent/US9741699B2/en
Priority to US15/631,482 priority patent/US10030857B2/en
Priority to US15/663,125 priority patent/US10247395B2/en
Priority to JP2018002356A priority patent/JP6629359B2/en
Priority to US16/016,401 priority patent/US10281123B2/en
Priority to JP2018128212A priority patent/JP6680834B2/en
Priority to US16/365,115 priority patent/US10670244B2/en
Priority to US16/404,187 priority patent/US10655826B2/en
Priority to KR1020190145749A priority patent/KR102139291B1/en
Priority to JP2020049778A priority patent/JP7050841B2/en
Priority to US16/876,987 priority patent/US10989396B2/en
Priority to US16/887,948 priority patent/US11255524B2/en
Priority to KR1020200078506A priority patent/KR102246243B1/en
Priority to KR1020200091689A priority patent/KR102287651B1/en
Priority to US17/651,891 priority patent/US11808436B2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating

Landscapes

  • Led Device Packages (AREA)

Abstract

The present invention relates to a light emitting device, which comprises a transparent substrate having a first surface and a second surface and a LED chip module. The LED chip module is configured on the first surface of the transparent substrate. At least a portion of the light emitted by the LED chip module may penetrate the transparent substrate and output from the second surface, so as to increase the light emitting directions of the light emitting device.

Description

發光裝置Illuminating device

    本發明係有關於一種發光裝置，尤指一種具有高出光效率、多方向出光特性之發光裝置。
The present invention relates to a light-emitting device, and more particularly to a light-emitting device having high light-emitting efficiency and multi-directional light-emitting characteristics.

    LED是發光二極體(Light Emitting Diode, LED)的簡稱，或稱作發光二極管，這種半導體元件發展以來一般是作為指示燈、顯示板，但目前隨著技術增加，已經能作為顯示或照明光源使用，它不但能夠高效率地直接將電能轉化為光能，使用壽命最長更達數萬小時至10萬小時，且材質無汞、不若傳統燈泡易碎、體積小、光源具方向性、可應用在低溫環境，故具有省電、高發光效率、可靠性高、環保等諸多優點。
    除了我們熟知的各種電子產品上面的LED指示燈外，LED螢幕、LED照明、液晶螢幕用的LED背光源、手機上按鍵的LED背光等等各式各樣關於LED的應用正逐漸穩定的發展中，部份領域的LED應用因為市場發展趨於成熟，普及的速度開始加快，也創造出驚人的商機。
    雖然LED具有高發光效率、高使用壽命、不易碎、省電、環保無汞、體積小、可應用在低溫環境、光源具方向性、光害少與色域豐富等優點，但LED之出光集中，因此無法像一般日常生活所使用之燈泡可達到多方向出光，即單純LED無法達到像一般燈泡之照明效果，所以習知使用LED的發光裝置通常是將LED置於印刷電路板封裝後，再搭配其他光學元件製成燈泡，但如此設計由於只使用LED單一面向的出光，無法充分利用LED產生的光，故出光效率低且無法發揮LED的優點，為了達成與成本低廉的傳統燈泡有相同發光效果，習知LED發光裝置必需使用昂貴的超高亮度LED元件或增加驅動功率，使得習知LED發光裝置造價昂貴，而消費者根據性價比大多仍選擇傳統燈源，使LED發光裝置尚無法完全取代目前日常生活所使用之照明光源。
    為解決出光效率問題，有學者提出一種新型發光裝置，如美國專利號7,781,789所揭露，係使用特殊的金屬支架與封裝結構設計，使LED的兩個相對出光面的光可以同時被利用，但由於該裝置在支架與封裝結構上構件多，製程複雜，故此種裝置在生產上仍有困難，且構件多也導致光學設計、可靠度、製造成本上必須考量更多，才能有習知發光裝置的發光效果，而增加實用上的難度。
LED is an abbreviation of Light Emitting Diode (LED), or LED, which has been used as an indicator light and display board since its development. However, with the increase of technology, it can be used as display or illumination. The light source is used, which not only can directly convert electric energy into light energy with high efficiency, but also has a service life of up to tens of thousands of hours to 100,000 hours, and the material is mercury-free, not easy to be broken, small in size, and directional in the light source. It can be applied in low temperature environment, so it has many advantages such as power saving, high luminous efficiency, high reliability and environmental protection.
In addition to the LED indicators on the various electronic products that we are familiar with, LED screens, LED lighting, LED backlights for LCD screens, LED backlights for buttons on mobile phones, etc. are all in a stable development. In some areas, LED applications have become more mature as the market has developed, and the speed of popularization has begun to accelerate, creating amazing business opportunities.
Although LED has high luminous efficiency, high service life, non-breaking, power saving, environmental protection, no mercury, small size, can be applied in low temperature environment, light source has directionality, less light damage and rich color gamut, but LED light concentration Therefore, it is impossible to achieve multi-directional light emission like a general-purpose light bulb used in daily life, that is, a simple LED cannot achieve a lighting effect like a general light bulb, so it is conventional to use an LED light-emitting device usually after placing the LED in a printed circuit board package, and then The bulb is made with other optical components, but the design is such that only the light of the single face of the LED is used, and the light generated by the LED cannot be fully utilized, so the light extraction efficiency is low and the advantages of the LED cannot be exerted, and the same light bulb is obtained in order to achieve the cost of the conventional light bulb. As a result, conventional LED lighting devices must use expensive ultra-high-brightness LED components or increase driving power, making conventional LED lighting devices expensive, and consumers still choose traditional light sources according to cost performance, so that LED lighting devices cannot completely replace them. The lighting source used in daily life.
In order to solve the problem of light-emitting efficiency, some scholars have proposed a novel light-emitting device, as disclosed in U.S. Patent No. 7,781,789, which uses a special metal bracket and package structure design, so that the two light-emitting surfaces of the LED can be simultaneously utilized, but The device has many components on the support and the package structure, and the process is complicated. Therefore, the device is still difficult to produce, and the components also lead to more considerations in optical design, reliability, and manufacturing cost, so that the conventional light-emitting device can be used. The luminous effect increases the practical difficulty.

    本發明之目的即為解決上述問題，而提供一種具高出光效率、多方向出光、容易生產且可靠度高的發光裝置。
    本發明提供一種發光裝置，其包含：一透明基板，具有第一表面及第二表面；一發光二極體晶片模組，設置於該透明基板之該第一表面；其中該發光二極體晶片模組所發出光線之至少一部分穿透該透明基板而從該第二表面出光，且該透明基板具有一定之厚度，使得該透明基板可以支撐該發光二極體晶片模組並與該發光裝置之承載座或固定件接合構裝。
SUMMARY OF THE INVENTION An object of the present invention is to solve the above problems and to provide a light-emitting device having high light-emitting efficiency, multi-directional light output, easy production, and high reliability.
The present invention provides a light emitting device comprising: a transparent substrate having a first surface and a second surface; a light emitting diode chip module disposed on the first surface of the transparent substrate; wherein the light emitting diode chip At least a portion of the light emitted by the module passes through the transparent substrate to emit light from the second surface, and the transparent substrate has a thickness such that the transparent substrate can support the light emitting diode chip module and the light emitting device The carrier or the fastener engages the assembly.

    請參閱第一圖，係本發明之第一實施例之發光裝置的結構圖。如圖所示，本實施例提供一種發光裝置1，發光裝置1包含一基板10、一發光二極體晶片模組11、第一連接導線12a及第二連接導線12b。基板10可為氧化鋁基板、玻璃基板、塑膠基板、樹脂基板、複合材料或其他材質之透明基板，並具有第一表面101及第二表面102。更進一步設計基板10之厚度在大於或等於200μm時，本發明之發光裝置1的製程上會有最佳的可靠度；另一設計是讓基板10在光線波長範圍大於或等於420nm，且小於或等於470nm，基板10穿透率大於或等於70%時，本發明之發光裝置1整體出光效率上會有最佳的效果。發光二極體晶片模組11、第一連接導線12a及第二連接導線12b設置於基板10之第一表面101，其中第一連接導線12a位於發光二極體晶片模組11之一側，第二連接導線12b位於發光二極體晶片模組11之另一側，且第一連接導線12a與發光二極體晶片模組11之第一電極110a電性連接，第二連接導線12b與發光二極體晶片模組11之第二電極110b電性連接。
    本實施例之發光二極體晶片模組11在僅有一個發光二極體晶片111時，發光二極體晶片模組11與第一連接導線12a及第二連接導線12b係直接電性連接於發光二極體晶片111上之第一電極110a及第二電極110b。本實施例之發光二極體晶片111除了具有第一電極110a及第二電極110b，更至少包含第一半導體層113、一發光層114及第二半導體層115，其中第一電極110a設置於第一半導體層113，第二電極110b設置於第二半導體層115，發光二極體晶片111之表面可為平面或非平面結構。另外該晶片的第一半導層113底部可設置另一透明導光基板(圖中未示)，使該晶片所發出之光線至少部分可經由該透明導光基板有方向性的射出，提昇發光裝置1的出光效率與發光效果。
    本實施例之發光二極體晶片111更可倒置於透明基板10，即第二半導體層115位於基板10與第一半導體層113之間，第一電極110a及第二電極110b分別透過一金屬凸塊14與第一連接導線12a及第二連接導線12b連接，使第一電極110a及第二電極110b分別與第一連接導線12a及第二連接導線12b電性連接。
    請一併參閱第二圖，係本發明之第一實施例之發光裝置的使用狀態圖；如圖所示：發光裝置1於使用時，先通入電源至第一連接導線12a及第二連接導線12b以導通發光二極體晶片模組11之發光二極體晶片111。待發光二極體晶片111導通發光後，發光二極體晶片111所發光線之至少一部分可經由基板10之第一表面101穿透基板10之第二表面102，使發光裝置1具有多方向出光特性。更進一步設計是使光線由基板10之第一表面101與第二表面102發出之色溫差異等於或小於1500K，使發光裝置1有更全面一致之發光效果。
    上述發光二極體晶片模組11可包含一發出單色光線之發光二極體晶片111，也可包含複數個選擇自一紅光發光二極體晶片、一綠光發光二極體晶片及一藍光發光二極體晶片及該些發光二極體晶片之組合。
    請參閱第三圖，係本發明之第二實施例之發光裝置的結構圖；如圖所示，本實施例中，發光二極體晶片111未倒置於基板10，發光二極體晶片111之第一半導體層113直接設置於基板10之第一表面101，即第一半導體層113位於第二半導體層115與基板10之間，而發光二極體晶片111之第一電極110a及第二電極110b分別透過一金屬打線15與第一連接導線12a及第二連接導線12b電性連接。
    請參閱第四圖，係本發明之第三實施例之發光裝置的結構圖；如圖所示，承第二實施例，發光裝置1更包含一能量轉換層13，能量轉換層13係含有至少一種螢光粉，能量轉換層13設置於可接收發光二極體晶片模組11所發出光線的位置(如基板10之第一表面101及第二表面102)，例如直接接觸於發光二極體晶片模組11或與發光二極體晶片模組11相鄰一段距離而不直接接觸，以接收並至少部分轉換發光二極體晶片模組11所發出光線為另一種波長範圍的光線，例如發光二極體晶片模組11發出藍色光線，能量轉換層13轉換部分藍色光線為黃色光線，而使發光裝置1最後發出白光。由於第一表面101與第二表面102發出之光線強度不同，本發明之發光裝置1最佳設計係可相應調整於第一表面101與第二表面102的能量轉換層13為具不同之螢光粉含量，例如1比0.5至1比3或其他比例，以提升發光裝置1之波長轉換效率。
    請參閱第五圖，係本發明之第四實施例之發光裝置的結構圖；如圖所示，本實施例之發光裝置1與上述實施例之發光裝置不同在於，本實施例之基板10的第二表面102為非平坦表面，當發光二極體晶片模組11所發出之光線進入基板10時，非平坦之第二表面102增加了基板10內之光線散射機會，進而提升發光裝置1之出光效率。然，請參閱第六圖，係本發明之第五實施例之發光裝置的結構圖；如圖所示，本實施例與第四實施例不同在於，本實施例之基板10的第一表面101也為非平坦表面，如此更增加發光二極體晶片模組11所發出之光線的散射，進一步提升發光裝置1之出光效率。
    請參閱第七圖，係本發明之第六實施例之發光裝置的結構圖；如圖所示，承第五實施例，本實施例之發光裝置1更包含第一類鑽碳膜層103，第一類鑽碳膜層103設置於基板10之第一表面101上，發光二極體晶片模組11、第一連接導線12a及第二連接導線12b設置於第一類鑽碳膜層103上。由於第一類鑽碳膜層103具有良好的熱傳導性，容易將發光二極體晶片模組11所產生之熱能導出，有效提升發光裝置1之散熱效果，提升發光裝置1之出光效率、可靠度及增加發光裝置1之使用壽命。另參閱第八圖，係本發明之第七實施例之發光裝置的結構圖；如圖所示，本實施例與第六實施例不同在於，本實施例之發光裝置1更包含第二類鑽碳膜層104，第二類鑽碳膜層104設置於基板10之第二表面102上。而上述實施例之第一類鑽碳膜層103及第二類鑽碳膜層104亦可設置於未具有非平坦表面之基板10，或與基板10一體化。
    請參閱第九圖，係本發明之第八實施例之發光裝置的結構圖；如圖所示，本實施例之發光裝置1的發光二極體晶片模組11具有多個發光二極體晶片，其包含一第一發光二極體晶片111a、一第二發光二極體晶片111b及至少一第三發光二極體晶片111c，該第三發光二極體晶片111c分別與第一發光二極體晶片111a與第二發光二極體晶片111b電性連接。而發光二極體晶片模組11之第一電極110a位於第一發光二極體晶片111a，發光二極體晶片模組11之第二電極110b位於第二發光二極體晶片111b，第一電極110a及第二電極110b分別與第一連接導線12a及第二連接導線12b電性連接。上述第一發光二極體晶片111a、第二發光二極體晶片111b及第三發光二極體晶片111c係可選擇自一紅光發光二極體晶片、一綠光發光二極體晶片、一藍光發光二極體晶片或該些晶片之組合，使本發明之發光裝置1所發出之光線的顏色有不同變化。而本實施例之發光二極體晶片模組11之該些發光二極體晶片係呈交錯排列，如此可增加發光裝置1之發光面積及使發光裝置1均勻發光。當然該些發光二極體晶片亦可呈線性排列或其它排列方式，於此不再贅述。
    本實施例之發光裝置1更包含一承載座16或固定件，基板10支撐發光二極體晶片模組11並設置於該承載座16上，本實施例之透明基板10之表面與承載座16之表面間具有一角度A，其中角度A範圍為30至150度。當然本實例之發光裝置1更可包含轉動機構使透明基板10與承載座16之間之角度可依據發光裝置1所需之照射角度調整。承載座16更包含一物件161，用以讓基板10設置於物件161上，以固定於承載座16，且其可為一平面、L型、U型或溝槽結構。
    由上述可知，本發明提供一種高出光效率、具實用性且高可靠度的發光裝置，並充分使用發光二極體晶片模組所發出之多方向光線，使該發光裝置同時具有多方向出光特性；而且於透明基板上設置類鑽碳膜層，因類鑽碳膜層具有良好的熱傳導性，更使發光裝置具有良好的散熱效果，以提升發光裝置之出光效率及使用壽命。
    惟以上所述者，僅為本發明之一較佳實施例而已，並非用來限定本發明實施之範圍，且各實施例之設計均能相互組合套用，舉凡依本發明申請專利範圍所述之形狀、構造、特徵及精神所為之均等變化與修飾，均應包括於本發明之申請專利範圍內。
Referring to the first drawing, there is shown a structural view of a light-emitting device according to a first embodiment of the present invention. As shown in the figure, the embodiment provides a light-emitting device 1. The light-emitting device 1 includes a substrate 10, a light-emitting diode chip module 11, a first connecting wire 12a and a second connecting wire 12b. The substrate 10 may be an alumina substrate, a glass substrate, a plastic substrate, a resin substrate, a composite material or a transparent substrate of other materials, and has a first surface 101 and a second surface 102. Further, when the thickness of the substrate 10 is designed to be greater than or equal to 200 μm, the light-emitting device 1 of the present invention has an optimum reliability in the process; and the other design is such that the substrate 10 has a light wavelength range greater than or equal to 420 nm and less than or When the transmittance of the substrate 10 is equal to or greater than 70%, the light-emitting device 1 of the present invention has an optimum light-emitting efficiency. The light emitting diode chip module 11, the first connecting wire 12a and the second connecting wire 12b are disposed on the first surface 101 of the substrate 10, wherein the first connecting wire 12a is located on one side of the LED chip module 11, The second connecting wire 12b is located on the other side of the LED chip module 11, and the first connecting wire 12a is electrically connected to the first electrode 110a of the LED chip module 11, and the second connecting wire 12b and the light emitting diode The second electrode 110b of the polar body wafer module 11 is electrically connected.
In the light-emitting diode chip module 11 of the present embodiment, when only one light-emitting diode chip 111 is present, the LED chip module 11 is directly electrically connected to the first connecting wire 12a and the second connecting wire 12b. The first electrode 110a and the second electrode 110b on the LED wafer 111. In addition to the first electrode 110a and the second electrode 110b, the LED array 111 of the present embodiment further includes at least a first semiconductor layer 113, a light emitting layer 114 and a second semiconductor layer 115, wherein the first electrode 110a is disposed on the first electrode 110a. A semiconductor layer 113, the second electrode 110b is disposed on the second semiconductor layer 115, and the surface of the LED array 111 may be a planar or non-planar structure. In addition, another transparent light guiding substrate (not shown) may be disposed on the bottom of the first semiconductive layer 113 of the wafer, so that the light emitted by the wafer is at least partially directionally emitted through the transparent light guiding substrate to enhance illumination. The light extraction efficiency and luminous effect of the device 1.
The light-emitting diode wafer 111 of the present embodiment can be further disposed on the transparent substrate 10, that is, the second semiconductor layer 115 is located between the substrate 10 and the first semiconductor layer 113, and the first electrode 110a and the second electrode 110b are respectively transmitted through a metal bump. The block 14 is connected to the first connecting wire 12a and the second connecting wire 12b, and electrically connects the first electrode 110a and the second electrode 110b to the first connecting wire 12a and the second connecting wire 12b, respectively.
Please refer to the second figure, which is a use state diagram of the illuminating device according to the first embodiment of the present invention; as shown in the figure: when the illuminating device 1 is in use, the power is first supplied to the first connecting wire 12a and the second connection. The wire 12b turns on the light-emitting diode wafer 111 of the light-emitting diode chip module 11. After the light emitting diode 111 is turned on, at least a portion of the light emitting line of the light emitting diode 111 can penetrate the second surface 102 of the substrate 10 via the first surface 101 of the substrate 10, so that the light emitting device 1 has multiple directions of light. characteristic. Further, the design is such that the difference in color temperature between the first surface 101 and the second surface 102 of the substrate 10 is equal to or less than 1500 K, so that the light-emitting device 1 has a more uniform illumination effect.
The LED chip module 11 may include a light emitting diode chip 111 that emits monochromatic light, and may also include a plurality of chips selected from a red light emitting diode chip, a green light emitting diode chip, and a light emitting diode chip. A blue light emitting diode chip and a combination of the light emitting diode chips.
Referring to FIG. 3, a structural diagram of a light-emitting device according to a second embodiment of the present invention; as shown in the figure, in the embodiment, the LED wafer 111 is not placed on the substrate 10, and the LED chip 111 is The first semiconductor layer 113 is disposed directly on the first surface 101 of the substrate 10, that is, the first semiconductor layer 113 is located between the second semiconductor layer 115 and the substrate 10, and the first electrode 110a and the second electrode of the LED chip 111 are disposed. 110b is electrically connected to the first connecting wire 12a and the second connecting wire 12b through a metal wire 15 respectively.
Referring to FIG. 4, a structural diagram of a light-emitting device according to a third embodiment of the present invention; as shown in the second embodiment, the light-emitting device 1 further includes an energy conversion layer 13 containing at least an energy conversion layer 13 A phosphor powder, the energy conversion layer 13 is disposed at a position capable of receiving light emitted by the LED chip assembly 11 (such as the first surface 101 and the second surface 102 of the substrate 10), for example, directly contacting the LED The wafer module 11 is adjacent to the LED module 11 at a distance from the LED module 11 to receive and at least partially convert the light emitted by the LED chip module 11 into light of another wavelength range, such as illumination. The diode chip module 11 emits blue light, and the energy conversion layer 13 converts part of the blue light into yellow light, so that the light-emitting device 1 finally emits white light. Since the light intensity of the first surface 101 and the second surface 102 is different, the optimal design of the light-emitting device 1 of the present invention can be adjusted correspondingly to the energy conversion layer 13 of the first surface 101 and the second surface 102 to have different fluorescence. The powder content, for example, 1 to 0.5 to 1 to 3 or other ratios, improves the wavelength conversion efficiency of the light-emitting device 1.
Referring to FIG. 5, it is a structural diagram of a light-emitting device according to a fourth embodiment of the present invention; as shown in the figure, the light-emitting device 1 of the present embodiment is different from the light-emitting device of the above embodiment in that the substrate 10 of the present embodiment The second surface 102 is a non-flat surface. When the light emitted by the LED chip module 11 enters the substrate 10, the non-flat second surface 102 increases the light scattering opportunity in the substrate 10, thereby improving the illumination device 1. Light extraction efficiency. 6 is a structural view of a light-emitting device according to a fifth embodiment of the present invention; as shown in the figure, the present embodiment is different from the fourth embodiment in that the first surface 101 of the substrate 10 of the present embodiment is It is also a non-flat surface, which further increases the scattering of light emitted by the LED chip assembly 11 to further improve the light-emitting efficiency of the light-emitting device 1.
FIG. 7 is a structural view of a light-emitting device according to a sixth embodiment of the present invention; as shown in the fifth embodiment, the light-emitting device 1 of the present embodiment further includes a first diamond-like carbon film layer 103, The first type of carbon film layer 103 is disposed on the first surface 101 of the substrate 10, and the LED chip assembly 11, the first connecting wire 12a and the second connecting wire 12b are disposed on the first diamond-like carbon film layer 103. . Since the first type of carbon film layer 103 has good thermal conductivity, it is easy to derive the heat energy generated by the LED chip assembly 11, thereby effectively improving the heat dissipation effect of the light-emitting device 1 and improving the light-emitting efficiency and reliability of the light-emitting device 1. And increasing the service life of the light-emitting device 1. FIG. 8 is a structural view of a light-emitting device according to a seventh embodiment of the present invention; as shown in the figure, the present embodiment is different from the sixth embodiment in that the light-emitting device 1 of the present embodiment further includes a second type of drill. The carbon film layer 104 and the second type of carbon film layer 104 are disposed on the second surface 102 of the substrate 10. The first type of carbon film layer 103 and the second type of carbon film layer 104 of the above embodiment may be disposed on the substrate 10 having no uneven surface or integrated with the substrate 10.
Referring to FIG. 9 is a structural diagram of a light-emitting device according to an eighth embodiment of the present invention; as shown, the light-emitting diode chip module 11 of the light-emitting device 1 of the present embodiment has a plurality of light-emitting diode chips. The first light emitting diode wafer 111a, the second light emitting diode wafer 111b and the at least one third light emitting diode wafer 111c, respectively, and the first light emitting diode wafer 111c and the first light emitting diode The bulk wafer 111a is electrically connected to the second LED wafer 111b. The first electrode 110a of the LED chip module 11 is located on the first LED chip 111a, and the second electrode 110b of the LED chip module 11 is located on the second LED chip 111b. 110a and second electrode 110b are electrically connected to the first connecting wire 12a and the second connecting wire 12b, respectively. The first light emitting diode wafer 111a, the second light emitting diode wafer 111b and the third light emitting diode wafer 111c are selected from a red light emitting diode chip, a green light emitting diode chip, and a green light emitting diode chip. The blue light emitting diode chip or a combination of the wafers causes the color of the light emitted by the light-emitting device 1 of the present invention to vary. The light-emitting diode chips of the light-emitting diode chip module 11 of the present embodiment are staggered, so that the light-emitting area of the light-emitting device 1 can be increased and the light-emitting device 1 can be uniformly illuminated. Of course, the LED chips may also be arranged in a linear arrangement or in other arrangements, and details are not described herein.
The illuminating device 1 of the present embodiment further includes a carrier 16 or a fixing member. The substrate 10 supports the LED module 11 and is disposed on the carrier 16. The surface of the transparent substrate 10 and the carrier 16 of the embodiment. There is an angle A between the surfaces, wherein the angle A ranges from 30 to 150 degrees. Of course, the illuminating device 1 of the present example may further include a rotating mechanism such that the angle between the transparent substrate 10 and the carrier 16 can be adjusted according to the illumination angle required by the illuminating device 1. The carrier 16 further includes an object 161 for positioning the substrate 10 on the object 161 for fixing to the carrier 16, and it may be a planar, L-shaped, U-shaped or grooved structure.
It can be seen from the above that the present invention provides a light-emitting device with high light-emitting efficiency, practicality and high reliability, and fully utilizes multi-directional light emitted by the LED chip module, so that the light-emitting device has multi-directional light-emitting characteristics at the same time. Moreover, a diamond-like carbon film layer is disposed on the transparent substrate, because the diamond-like carbon film layer has good thermal conductivity, and the light-emitting device has a good heat-dissipating effect to improve the light-emitting efficiency and service life of the light-emitting device.
However, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, and the design of each embodiment can be combined with each other, as described in the scope of the present application. Equivalent changes and modifications to the shapes, structures, features, and spirits are all included in the scope of the present invention.

1．．．發光裝置1. . . Illuminating device

10．．．基板10. . . Substrate

101．．．第一表面101. . . First surface

102．．．第二表面102. . . Second surface

103．．．第一類鑽碳膜層103. . . The first type of carbon film

104．．．第二類鑽碳膜層104. . . The second type of carbon film

11．．．發光二極體晶片模組11. . . Light-emitting diode chip module

110a．．．第一電極110a. . . First electrode

110b．．．第二電極110b. . . Second electrode

111．．．發光二極體晶片111. . . Light-emitting diode chip

111a．．．第一發光二極體晶片111a. . . First light emitting diode chip

111b．．．第二發光二極體晶片111b. . . Second light emitting diode chip

111c．．．第三發光二極體晶片111c. . . Third light emitting diode chip

113．．．第一半導體層113. . . First semiconductor layer

114．．．發光層114. . . Luminous layer

115．．．第二半導體層115. . . Second semiconductor layer

12a．．．第一連接導線12a. . . First connecting wire

12b．．．第二連接導線12b. . . Second connecting wire

13．．．能量轉換層13. . . Energy conversion layer

14．．．金屬凸塊14. . . Metal bump

15．．．金屬打線15. . . Metal wire

16．．．承載座16. . . Carrier

161．．．物件161. . . object

A．．．角度A. . . angle

第一圖係本發明之第一實施例之發光裝置的結構圖；
第二圖係本發明之第一實施例之發光裝置的使用狀態圖；
第三圖係本發明之第二實施例之發光裝置的結構圖；
第四圖係本發明之第三實施例之發光裝置的結構圖；
第五圖係本發明之第四實施例之發光裝置的結構圖；
第六圖係本發明之第五實施例之發光裝置的結構圖；
第七圖係本發明之第六實施例之發光裝置的結構圖；
第八圖係本發明之第七實施例之發光裝置的結構圖；以及
第九圖係本發明之第八實施例之發光裝置的結構圖。
The first drawing is a structural view of a light-emitting device according to a first embodiment of the present invention;
The second drawing is a view showing a state of use of the light-emitting device of the first embodiment of the present invention;
The third drawing is a structural view of a light-emitting device according to a second embodiment of the present invention;
Figure 4 is a structural view of a light-emitting device according to a third embodiment of the present invention;
Figure 5 is a structural view of a light-emitting device of a fourth embodiment of the present invention;
Figure 6 is a structural view of a light-emitting device according to a fifth embodiment of the present invention;
Figure 7 is a structural view of a light-emitting device of a sixth embodiment of the present invention;
8 is a structural view of a light-emitting device according to a seventh embodiment of the present invention; and a ninth diagram is a structural view of a light-emitting device according to an eighth embodiment of the present invention.

1．．．發光裝置1. . . Illuminating device

10．．．基板10. . . Substrate

101．．．第一表面101. . . First surface

102．．．第二表面102. . . Second surface

11．．．發光二極體晶片模組11. . . Light-emitting diode chip module

110a．．．第一電極110a. . . First electrode

110b．．．第二電極110b. . . Second electrode

111．．．發光二極體晶片111. . . Light-emitting diode chip

113．．．第一半導體層113. . . First semiconductor layer

114．．．發光層114. . . Luminous layer

115．．．第二半導體層115. . . Second semiconductor layer

12a．．．第一連接導線12a. . . First connecting wire

12b．．．第二連接導線12b. . . Second connecting wire

14．．．金屬凸塊14. . . Metal bump

Claims (20)

一種發光裝置，其包含：
一透明基板，具有第一表面、第二表面及一定厚度；
一發光二極體晶片模組，設置於該透明基板之該第一表面；
其中該發光二極體晶片模組所發出光線的至少一部分係穿透該透明基板而從該第二表面出光。A light emitting device comprising:
a transparent substrate having a first surface, a second surface and a certain thickness;
a light emitting diode chip module disposed on the first surface of the transparent substrate;
At least a portion of the light emitted by the LED chip module passes through the transparent substrate to emit light from the second surface. 如請求項1所示之發光裝置，其中該透明基板之厚度係大於或等於200μm。The light-emitting device of claim 1, wherein the thickness of the transparent substrate is greater than or equal to 200 μm. 如請求項1所示之發光裝置，其中在該光線波長範圍大於或等於420nm，且小於或等於470nm時，該透明基板之穿透率大於或等於70%。The light-emitting device of claim 1, wherein the transmittance of the transparent substrate is greater than or equal to 70% when the light wavelength range is greater than or equal to 420 nm and less than or equal to 470 nm. 如請求項1所示之發光裝置，其中該發光二極體晶片模組包含至少一發光二極體晶片，該發光二極體晶片之表面具有非平面結構。The illuminating device of claim 1, wherein the illuminating diode chip module comprises at least one illuminating diode chip, and the surface of the illuminating diode chip has a non-planar structure. 如請求項1所示之發光裝置，其中由該基板的第一表面與該第二表面發出之光線色溫差異等於或小於1500K。The light-emitting device of claim 1, wherein a difference in color temperature of light emitted from the first surface of the substrate and the second surface is equal to or less than 1500K. 如請求項1所示之發光裝置，其中該發光二極體晶片模組包含第一發光二極體晶片及第二發光二極體晶片，該第一發光二極體晶片與該第二發光二極體晶片電性連接，且第一電極位於該第一發光二極體晶片上，第二電極位於該第二發光二極體晶片上。The illuminating device of claim 1, wherein the illuminating diode chip module comprises a first illuminating diode chip and a second illuminating diode chip, the first illuminating diode chip and the second illuminating diode The pole body wafer is electrically connected, and the first electrode is located on the first LED chip, and the second electrode is located on the second LED chip. 如請求項6所示之發光裝置，其中該發光二極體晶片模組更包含：
至少一第三發光二極體晶片，分別與該第一發光二極體晶片與該第二發光二極體晶片電性連接。The illuminating device of claim 6, wherein the illuminating diode chip module further comprises:
The at least one third LED chip is electrically connected to the first LED chip and the second LED chip, respectively. 如請求項1所示之發光裝置，其中該發光二極體晶片模組更包含選擇自一紅光發光二極體晶片、一綠光發光二極體晶片、一藍光發光二極體晶片或該些晶片之組合。The illuminating device of claim 1, wherein the illuminating diode chip module further comprises: selecting a red light emitting diode chip, a green light emitting diode chip, a blue light emitting diode chip or the A combination of these wafers. 如請求項1所示之發光裝置，更包含：
一能量轉換層，設置於可接收該發光二極體晶片模組所發出光線的位置，並將所接收至少部分來自該發光二極體晶片模組之光線轉換為另一波長範圍的光線。The illuminating device as claimed in claim 1, further comprising:
An energy conversion layer is disposed at a position for receiving light emitted by the LED chip module, and converting at least part of the light from the LED chip module into light of another wavelength range. 如請求項9所示之發光裝置，其中該能量轉換層設置於該透明基板之第一表面與第二表面。The illuminating device of claim 9, wherein the energy conversion layer is disposed on the first surface and the second surface of the transparent substrate. 如請求項9所示之發光裝置，其中該能量轉換層設置係直接接觸於該發光二極體晶片模組。The illuminating device of claim 9, wherein the energy conversion layer is disposed in direct contact with the illuminating diode chip module. 如請求項9所示之發光裝置，其中該能量轉換層設置係不與該發光二極體晶片模組直接接觸。The illuminating device of claim 9, wherein the energy conversion layer is disposed in direct contact with the illuminating diode chip module. 如請求項1所示之發光裝置，其中該透明基板材質可選擇自氧化鋁、玻璃、塑膠、樹脂或複合材料。The light-emitting device of claim 1, wherein the transparent substrate material is selected from the group consisting of alumina, glass, plastic, resin or composite material. 如請求項1所示之發光裝置，其中該透明基板之至少一表面為非平坦表面。The illuminating device of claim 1, wherein at least one surface of the transparent substrate is a non-flat surface. 如請求項10所示之發光裝置，其中該能量轉換層所含螢光粉含量於不同表面的比例可為相同或不同。The illuminating device of claim 10, wherein the ratio of the phosphor powder content of the energy conversion layer to different surfaces may be the same or different. 如請求項10所示之發光裝置，其中該能量轉換層所含螢光粉含量於不同表面的比例為1比1至1比3。The illuminating device of claim 10, wherein the energy conversion layer contains a phosphor powder content on a different surface in a ratio of 1 to 1 to 1 to 3. 如請求項1所示之發光裝置，更包含：
一種類鑽碳膜層，設置於該透明基板之至少一表面。The illuminating device as claimed in claim 1, further comprising:
A diamond-like carbon film layer is disposed on at least one surface of the transparent substrate. 如請求項1所示之發光裝置，更包含：
一承載座，係供該透明基板設置，且該基板與該承載座間呈一角度，該角度範圍可從30度至150度。The illuminating device as claimed in claim 1, further comprising:
A carrier is disposed for the transparent substrate, and the substrate and the carrier are at an angle ranging from 30 degrees to 150 degrees. 如請求項18所示之發光裝置，更包含：
一轉動機構，使該基板與該承載座間的角度為可調。The illuminating device as claimed in claim 18, further comprising:
A rotating mechanism adjusts the angle between the substrate and the carrier. 如請求項1所示之發光裝置，更包含：
一物件以固定該基板於該發光裝置，且該物件可為一平面、L型、U型或溝槽結構。The illuminating device as claimed in claim 1, further comprising:
An object is used to fix the substrate to the light emitting device, and the object can be a planar, L-shaped, U-shaped or grooved structure.
TW101131643A 2012-05-29 2012-08-30 Light emitting device TWI464908B (en)

Priority Applications (52)

Application Number Priority Date Filing Date Title
TW101131643A TWI464908B (en) 2012-08-30 2012-08-30 Light emitting device
US13/834,246 US9166116B2 (en) 2012-05-29 2013-03-15 Light emitting device
US13/845,160 US9065022B2 (en) 2012-05-29 2013-03-18 Light emitting apparatus
CN2013202827433U CN203322771U (en) 2012-05-29 2013-05-22 Light emitting assembly
CN2013202827772U CN203277380U (en) 2012-05-29 2013-05-22 Light-emitting component and light-emitting device thereof
CN201310191943.2A CN103456728B (en) 2012-05-29 2013-05-22 Light-emitting component and light-emitting device thereof
CN201610696438.7A CN106252491A (en) 2012-05-29 2013-05-22 Light-emitting device
CN201310191955.5A CN103453357B (en) 2012-05-29 2013-05-22 Light emitting assembly
CN201310191944.7A CN103456863B (en) 2012-05-29 2013-05-22 light emitting device
CN2013202827664U CN203300693U (en) 2012-05-29 2013-05-22 Light emitting diode chip capable of emitting light in multiple directions and light emitting device thereof
CN2013202827950U CN203277498U (en) 2012-05-29 2013-05-22 Light-emitting component and device base of light-emitting device thereof
CN2013202827787U CN203325967U (en) 2012-05-29 2013-05-22 Light emitting device
CN201310191958.9A CN103456869B (en) 2012-05-29 2013-05-22 Light-emitting device, light-emitting diode chip for forming multi-directional light emission and sapphire substrate thereof
CN2013202827946U CN203277485U (en) 2012-05-29 2013-05-22 Light-emitting device, light-emitting diode chip for forming multi-directional light emission and sapphire substrate thereof
JP2013111835A JP6367526B2 (en) 2012-05-29 2013-05-28 Sapphire substrate, light emitting diode chip, and light emitting device for forming a light emitting diode chip capable of emitting light in a plurality of directions
JP2013112370A JP6504739B2 (en) 2012-05-29 2013-05-28 Light emitting element, light emitting device and base for device
US13/903,998 US20130320363A1 (en) 2012-05-29 2013-05-28 Sapphire substrate configured to form light emitting diode chip providing light in multi-directions, light emitting diode chip, and illumination device
EP13169803.7A EP2669947B1 (en) 2012-05-29 2013-05-29 Illumination device comprising light emitting diode chip providing light in multi-directions
KR1020130061002A KR20130133696A (en) 2012-05-29 2013-05-29 Sapphire substrate configured to form light emitting diode chip providing light in multi-directions, light emitting diode chip and illumination device
EP13169790.6A EP2669946B1 (en) 2012-05-29 2013-05-29 Illumination device
DE202013012548.9U DE202013012548U1 (en) 2012-05-29 2013-05-29 Light-emitting element, lighting device and its device frame
EP21186715.5A EP3961706A1 (en) 2012-05-29 2013-05-29 Illumination device
EP21197696.4A EP3951869A1 (en) 2012-05-29 2013-05-29 Illumination device
DE202013012729.5U DE202013012729U1 (en) 2012-05-29 2013-05-29 Light-emitting element, lighting device and its device frame
EP18196452.9A EP3454369A1 (en) 2012-05-29 2013-05-29 Illumination device and device frame thereof
KR1020130061001A KR102129533B1 (en) 2012-05-29 2013-05-29 Light emitting element, illumination device and foundation thereof
EP18185878.8A EP3415807B1 (en) 2012-05-29 2013-05-29 Illumination device
DE202013012707.4U DE202013012707U1 (en) 2012-05-29 2013-05-29 Light-emitting element, lighting device and its device frame
DE202013012698.1U DE202013012698U1 (en) 2012-05-29 2013-05-29 Light-emitting element, lighting device and its device frame
DE202013012711.2U DE202013012711U1 (en) 2012-05-29 2013-05-29 Light-emitting element, lighting device and its device frame
DE202013012554.3U DE202013012554U1 (en) 2012-05-29 2013-05-29 Light-emitting element, lighting device and its device frame
DE202013012509.8U DE202013012509U1 (en) 2012-05-29 2013-05-29 Light-emitting element, lighting device and its device frame
US13/904,038 US9123868B2 (en) 2012-05-29 2013-05-29 Light emitting element and illumination device thereof
US14/089,708 US9368483B2 (en) 2012-05-29 2013-11-25 Illumination device capable of decreasing shadow of lighting effect
US14/218,869 US9488321B2 (en) 2012-05-29 2014-03-18 Illumination device with inclined light emitting element disposed on a transparent substrate
US14/218,944 US20180006199A9 (en) 2012-05-29 2014-03-18 Semiconductor light emitting element with dispersive optical unit and illumination device comprising the same
US14/340,574 US9711490B2 (en) 2012-05-29 2014-07-25 Illumination device
US14/886,787 US9741699B2 (en) 2012-05-29 2015-10-19 Light emitting device
US15/631,482 US10030857B2 (en) 2012-05-29 2017-06-23 Illumination device
US15/663,125 US10247395B2 (en) 2012-05-29 2017-07-28 Light emitting device
JP2018002356A JP6629359B2 (en) 2012-05-29 2018-01-11 Light emitting element, light emitting device and device base
US16/016,401 US10281123B2 (en) 2012-05-29 2018-06-22 Illumination device
JP2018128212A JP6680834B2 (en) 2012-05-29 2018-07-05 Light emitting device
US16/365,115 US10670244B2 (en) 2012-05-29 2019-03-26 Light emitting device
US16/404,187 US10655826B2 (en) 2012-05-29 2019-05-06 Illumination device
KR1020190145749A KR102139291B1 (en) 2012-05-29 2019-11-14 Illumination device
JP2020049778A JP7050841B2 (en) 2012-05-29 2020-03-19 Light emitting device
US16/876,987 US10989396B2 (en) 2012-05-29 2020-05-18 Illumination device
US16/887,948 US11255524B2 (en) 2012-05-29 2020-05-29 Light emitting device
KR1020200078506A KR102246243B1 (en) 2012-05-29 2020-06-26 Light emitting element, illumination device and foundation thereof
KR1020200091689A KR102287651B1 (en) 2012-05-29 2020-07-23 Illumination device
US17/651,891 US11808436B2 (en) 2012-05-29 2022-02-21 Light emitting apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW101131643A TWI464908B (en) 2012-08-30 2012-08-30 Light emitting device

Publications (2)

Publication Number Publication Date
TW201409741A true TW201409741A (en) 2014-03-01
TWI464908B TWI464908B (en) 2014-12-11

Family

ID=50820500

Family Applications (1)

Application Number Title Priority Date Filing Date
TW101131643A TWI464908B (en) 2012-05-29 2012-08-30 Light emitting device

Country Status (1)

Country Link
TW (1) TWI464908B (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW561564B (en) * 2002-10-17 2003-11-11 Uni Light Technology Inc Flip-chip like light emitting device package
TW200414563A (en) * 2003-01-30 2004-08-01 South Epitaxy Corp Light emitting diode and a method of manufacturing the same
TWM323569U (en) * 2006-12-29 2007-12-11 Greenpower Lighting Co Ltd Lamp holder structure
JP5343018B2 (en) * 2010-02-08 2013-11-13 昭和電工株式会社 LIGHT EMITTING DIODE, MANUFACTURING METHOD THEREOF, AND LIGHT EMITTING DIODE LAMP
US20120097985A1 (en) * 2010-10-21 2012-04-26 Wen-Huang Liu Light Emitting Diode (LED) Package And Method Of Fabrication

Also Published As

Publication number Publication date
TWI464908B (en) 2014-12-11

Similar Documents

Publication Publication Date Title
US10670244B2 (en) Light emitting device
EP2669947B1 (en) Illumination device comprising light emitting diode chip providing light in multi-directions
US7888698B2 (en) Photoelectric semiconductor device capable of generating uniform compound lights
US9029898B2 (en) Light emitting diode and illumination device using same
TWI766900B (en) Light emitting device
TWI542034B (en) Light emitting device
TWI644450B (en) Light emitting device
TWI464908B (en) Light emitting device
TWM462819U (en) Light emitting apparatus
TWM460203U (en) Light emitting element
CN106169467B (en) Light emitting device
TWI443858B (en) Light emitting diodes
TWM506380U (en) Illuminant device
TW201409775A (en) Illumination device having light emitting diode
TW201502426A (en) Globular illuminant device