TW201409505A - Laminated ceramic electronic component - Google Patents

Laminated ceramic electronic component Download PDF

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TW201409505A
TW201409505A TW102112547A TW102112547A TW201409505A TW 201409505 A TW201409505 A TW 201409505A TW 102112547 A TW102112547 A TW 102112547A TW 102112547 A TW102112547 A TW 102112547A TW 201409505 A TW201409505 A TW 201409505A
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layer
ceramic
thickness
internal electrode
thermal shock
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TW102112547A
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TWI460753B (en
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Hiroyuki Wada
Yosuke Hirata
Takashi Hiramatsu
Yoshito Saito
Hideaki Tsuji
Hiroyuki Ukai
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Murata Manufacturing Co
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/258Temperature compensation means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1006Thick film varistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/102Varistor boundary, e.g. surface layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/18Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material comprising a plurality of layers stacked between terminals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/005Electrodes
    • H01G4/012Form of non-self-supporting electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/30Stacked capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01GCAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G4/00Fixed capacitors; Processes of their manufacture
    • H01G4/002Details
    • H01G4/018Dielectrics
    • H01G4/06Solid dielectrics
    • H01G4/08Inorganic dielectrics
    • H01G4/12Ceramic dielectrics

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Ceramic Capacitors (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Coils Or Transformers For Communication (AREA)

Abstract

Provided is a laminated ceramic electronic component that does not invite a reduction in performance due to breakage in an internal electrode layer, has favorable thermal shock resistance, and is highly reliable. A laminated section (10) has the following: a thermal shock mitigating section (11) which corresponds to a region near an external layer (20) including a region in contact with the external layer and which is provided with a curved ceramic layer (1, (1a)) and an internal electrode layer (2, (2a)) the thickness of which changes smoothly according to a position; and a normal laminated section (12) which corresponds to a region inside from the thermal shock mitigating section and which is provided with a ceramic layer (1, (1b)) the degree of curvature of which is smaller than the ceramic layer (1, (1a)) of the thermal shock mitigating section (11), and an internal electrode layer (2, (2b)) in which the degree of thickness change according to a position in a direction following the main surface of the external layer (20) is smaller than the internal electrode layer (2, (2a)) of the thermal shock mitigating section (11). With regard to the thermal shock mitigating section, the CV value of the thickness of the ceramic layer is no more than 15%, the CV value of the thickness of at least one layer of the internal electrode layers is at least 40%, and the CV value of the distance between mid-points is at least 40% in a case of one set of adjacent ceramic layers.

Description

積層陶瓷電子零件 Laminated ceramic electronic parts

本發明係關於一種積層陶瓷電子零件,其包括:積層部,其具有經積層之複數層陶瓷層及位於陶瓷層間之內部電極層;外層部,其以自兩主面側夾入積層部之方式而配設,且具有不包括內部電極層之陶瓷層。 The present invention relates to a laminated ceramic electronic component comprising: a laminated portion having a plurality of laminated ceramic layers and an internal electrode layer between the ceramic layers; and an outer layer portion sandwiching the laminated portion from both main faces It is provided with a ceramic layer that does not include an internal electrode layer.

作為具有代表性之積層陶瓷電子零件之一,有晶片型之積層陶瓷電容器。並且,伴隨近年來之電子機器之小型化、高性能化,就該瓷電容器而言,希望與目前相比每單位體積之靜電電容更大、更小型且能獲得更大的容量。 As one of the representative laminated ceramic electronic parts, there is a wafer type multilayer ceramic capacitor. Further, with the recent miniaturization and high performance of electronic equipment, it is desirable for the ceramic capacitor to have a larger electrostatic capacitance per unit volume than before, and to obtain a larger capacity.

為了實現該小型化及大容量化,通常需要使陶瓷層及內部電極層之薄層化且增加積層部之陶瓷層及內部電極層之積層數,即謀求多層化。 In order to achieve such miniaturization and increase in capacity, it is generally necessary to reduce the thickness of the ceramic layer and the internal electrode layer and increase the number of layers of the ceramic layer and the internal electrode layer in the laminated portion, that is, to increase the number of layers.

然而,於已多層化之情形時,積層陶瓷電容器之每單位體積之內部電極層比率増化。其結果,存在因陶瓷層與內部電極層之間之燒結收縮溫度之差而容易產生分層的問題。 However, in the case of multi-layering, the internal electrode layer ratio per unit volume of the multilayer ceramic capacitor is degenerated. As a result, there is a problem that delamination easily occurs due to the difference in sintering shrinkage temperature between the ceramic layer and the internal electrode layer.

又,於構成陶瓷層之陶瓷及構成內部電極層部分之金屬中,各熱膨脹係數不同。因此,經焙燒步驟獲得之積層陶瓷電容器中存在起因於熱膨脹係數之差的內部應力。並且,由於上述多層化而會使內部電極層之比率增加,該內部應力則會隨之變大,從而存在成為於施加熱衝擊之情形時裂痕產生之原因的問題。 Further, in the ceramic constituting the ceramic layer and the metal constituting the internal electrode layer portion, the respective thermal expansion coefficients are different. Therefore, in the multilayer ceramic capacitor obtained by the firing step, there is an internal stress due to the difference in thermal expansion coefficient. Further, since the ratio of the internal electrode layer is increased by the multilayering, the internal stress is increased, and there is a problem that cracks are generated when a thermal shock is applied.

對此,作為解決此類問題者揭示有積層陶瓷電子零件,如圖8及9所示,其具有陶瓷層107與內部電極層105、106交替積層之積層體103、及設置於該積層體103之端部且分別連接於內部電極層105、106之外部電極102、102;且於內部電極層105、106中存在具有與該導體粒子之平均粒徑相等或平均粒徑小於其的第一陶瓷粒子(未圖示),且存在具有較內部電極層105、106之厚度大之平均粒徑的第二陶瓷粒子108(圖9)(參考專利文獻1)。 In this regard, as a solution to such problems, a laminated ceramic electronic component is disclosed, as shown in FIGS. 8 and 9, a laminated body 103 having a ceramic layer 107 and internal electrode layers 105 and 106 alternately laminated, and a laminated body 103 disposed thereon. The ends are respectively connected to the external electrodes 102, 102 of the internal electrode layers 105, 106; and the first ceramics having the same average particle diameter or smaller average particle diameter than the conductor particles are present in the internal electrode layers 105, 106. The particles (not shown) have the second ceramic particles 108 having an average particle diameter larger than that of the internal electrode layers 105 and 106 (FIG. 9) (refer to Patent Document 1).

並且,根據該專利文獻1之發明,因陶瓷層107間之熱膨脹率之差變小,又其等之間之結合力變強,故將積層陶瓷電子零件搭載於電路基板上且焊接外部電極102、102之情形時伴隨於熱休克等而產生的積層體103之耐熱應力較高,可獲得不易產生積層體103之內部中之裂痕或分層不良的積層陶瓷電子零件(專利文獻1,0045段)。 Further, according to the invention of Patent Document 1, since the difference in thermal expansion coefficient between the ceramic layers 107 is small, and the bonding force between the ceramic layers 107 is increased, the laminated ceramic electronic component is mounted on the circuit board and the external electrode 102 is soldered. In the case of 102, the laminated body 103 which is caused by heat shock or the like has a high heat-resistance stress, and a laminated ceramic electronic component which is less likely to cause cracks or delamination in the inside of the laminated body 103 can be obtained (Patent Document 1,0045) ).

然而,專利文獻1之情形時,由於內部電極層105、106中存在之具有較內部電極層105、106之厚度大之平均粒徑的第二陶瓷粒子,而使內部電極層產生間斷,因此於積層陶瓷電子零件為積層陶瓷電容器之情形時,產生導致靜電電容之下降這一與大容量化之要求相反的現象。 However, in the case of Patent Document 1, since the second ceramic particles having the average particle diameter larger than the thickness of the internal electrode layers 105 and 106 present in the internal electrode layers 105 and 106 cause the internal electrode layer to be interrupted, When the laminated ceramic electronic component is a laminated ceramic capacitor, there is a phenomenon that the electrostatic capacitance is lowered, which is contrary to the requirement of increasing the capacity.

又,同樣之問題亦存在於積層陶瓷電容器以外之積層陶瓷電子零件中。 Moreover, the same problem exists in laminated ceramic electronic parts other than laminated ceramic capacitors.

[先前技術文獻] [Previous Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2000-277369號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2000-277369

本發明係解決上述課題者,其目的在於提供一種不會因內部電極層之間斷而引起性能之降低、而且耐熱衝擊性良好且可靠性較高的 積層陶瓷電子零件。 The present invention has been made in view of the above problems, and it is an object of the invention to provide a reduction in performance due to discontinuity of internal electrode layers, and also excellent thermal shock resistance and high reliability. Laminated ceramic electronic parts.

為了解決上述課題,本發明之積層陶瓷電子零件之特徵在於:其係包括:積層部,其具有經積層之複數層陶瓷層及位於上述陶瓷層間之內部電極層;及外層部,其具有以自沿積層方向之方向夾入上述積層部之方式而配設的1層以上之陶瓷層;該積層陶瓷電子零件中,於上述積層部之中,包括鄰接於上述外層部之區域的外層部附近區域係構成熱衝擊緩和部,該熱衝擊緩和部包括:彎曲之上述陶瓷層、及厚度根據沿上述外層部之主面之方向上之位置而平滑地變化的上述內部電極層;且較上述熱衝擊緩和部更靠內側之區域係構成通常積層部,該通常積層部包括:上述陶瓷層,其彎曲之程度小於上述熱衝擊緩和部之上述陶瓷層;及上述內部電極層,其根據沿上述外層部之主面之方向上之位置而產生的厚度之變化之程度小於上述熱衝擊緩和部之上述內部電極層;且上述熱衝擊緩和部中,上述陶瓷層之厚度之CV值為15%以下,至少1層之上述內部電極層之厚度之CV值為40%以上,將對相互鄰接之一組陶瓷層觀察時、位於一陶瓷層及另一陶瓷層之厚度方向之中央的點沿上述積層部之積層方向連接而成的直線之長度、即中點間距離之CV值為40%以上。 In order to solve the above problems, the laminated ceramic electronic component of the present invention is characterized in that it comprises: a laminate portion having a plurality of laminated ceramic layers and an internal electrode layer between the ceramic layers; and an outer layer portion having One or more ceramic layers disposed so as to sandwich the laminated portion in the direction of the lamination direction; in the laminated ceramic electronic component, the laminated portion includes a region near the outer layer portion adjacent to the region of the outer layer portion The thermal shock absorbing portion includes: the curved ceramic layer and the inner electrode layer whose thickness is smoothly changed according to a position along a main surface of the outer layer portion; and the thermal shock The region of the inner side of the mitigation portion is a normal laminated portion, and the normal laminated portion includes: the ceramic layer having a degree of bending smaller than the ceramic layer of the thermal shock absorbing portion; and the inner electrode layer according to the outer layer portion The degree of change in thickness caused by the position in the direction of the main surface is smaller than the above-mentioned internal electrode layer of the thermal shock absorbing portion In the thermal shock absorbing portion, the CV value of the thickness of the ceramic layer is 15% or less, and the CV value of the thickness of the internal electrode layer of at least one layer is 40% or more, and the ceramic layers adjacent to each other are observed. The length of the straight line connecting the points in the thickness direction of one ceramic layer and the other ceramic layer in the stacking direction of the laminated portion, that is, the CV value of the distance between the midpoints is 40% or more.

又,上述通常積層部中,較佳為上述陶瓷層之厚度之CV值為15%以下,上述內部電極層之厚度之CV值為20%以下,將對相互鄰接之一組陶瓷層觀察時、位於一陶瓷層及另一陶瓷 層之厚度方向之中央的點沿上述積層部之積層方向而連接的直線之長度、即中點間距離之CV值為20%以下。 Further, in the above-mentioned general laminated portion, it is preferable that the CV value of the thickness of the ceramic layer is 15% or less, and the CV value of the thickness of the internal electrode layer is 20% or less, and when one ceramic layer adjacent to each other is observed, Located in a ceramic layer and another ceramic The length of the straight line connecting the points in the thickness direction of the layer along the lamination direction of the laminated portion, that is, the CV value of the distance between the midpoints is 20% or less.

藉由將通常積層部形成為上述之構成,而具有基於上述基本構成(熱衝擊緩和部之構成)的優良耐熱衝擊性,且於通常積層部中內部電極層與陶瓷層無變形而確實地積層,基於此,能夠獲得具有優良電氣特性的積層陶瓷電子零件,從而可使本發明進而有效。 By having the above-described basic structure (the structure of the thermal shock absorbing portion) excellent in thermal shock resistance, the normal laminated portion is formed as described above, and the internal electrode layer and the ceramic layer are reliably deformed without being deformed in the usual laminated portion. Based on this, it is possible to obtain a laminated ceramic electronic component having excellent electrical characteristics, and the present invention can be further effective.

又,本發明之積層陶瓷電子零件較佳為表面安裝型之積層陶瓷電容器。 Further, the laminated ceramic electronic component of the present invention is preferably a surface mount type multilayer ceramic capacitor.

表面安裝型之積層陶瓷電容器尤其為了實現小型化、高性能化(大容量化),而不斷向多層化發展。其結果,由於陶瓷層與內部電極層之間的燒結收縮溫度之差而存在易於產生分層的問題,但藉由應用本發明,能夠提供一種可提高耐熱衝擊性、且雖小型但可獲得較大之靜電電容、且可靠性較高的積層陶瓷電容器,特別有意義。 In particular, in order to achieve miniaturization and high performance (large capacity), the surface mount type multilayer ceramic capacitor has been continuously developed into a multilayer. As a result, there is a problem that delamination tends to occur due to the difference in sintering shrinkage temperature between the ceramic layer and the internal electrode layer. However, by applying the present invention, it is possible to provide a thermal shock resistance which is small, but can be obtained. A multilayer ceramic capacitor with a large electrostatic capacitance and high reliability is particularly meaningful.

本發明之積層陶瓷電子零件如上所述,於積層部之中,將包括鄰接於外層部之區域的外層部附近區域形成為熱衝擊緩和部,該熱衝擊緩和部包括彎曲之陶瓷層、及厚度根據沿外層部之主面之方向上之位置而平滑地變化的內部電極層;將較熱衝擊緩和部更靠內側之區域形成為通常積層部,該通常積層部包括彎曲之程度小於熱衝擊緩和部之陶瓷層的陶瓷層、及根據沿外層部之主面之方向上之位置而產生的厚度之變化之程度小於熱衝擊緩和部之內部電極層的內部電極層;且熱衝擊緩和部滿足如下必要條件:陶瓷層之厚度之CV值為15%以下,至少1層之內部電極層之厚度之CV值為40%以上,對相互鄰接之一組陶瓷層觀察時中點間距離之CV值為40%以上;故可提供相對於熱衝擊之耐性高,例如於積層陶瓷電容器之情形時為小型但能夠獲得較大之靜電電容且可靠性高、小型高性能的積層陶瓷電子零件。 In the laminated ceramic electronic component of the present invention, as described above, in the laminated portion, a region near the outer layer portion including the region adjacent to the outer layer portion is formed as a thermal shock absorbing portion including a curved ceramic layer and a thickness. The inner electrode layer smoothly changes according to the position in the direction of the main surface of the outer layer portion; the region on the inner side of the thermal shock mitigation portion is formed as a normal laminated portion, the normal laminated portion including the degree of bending less than the thermal shock mitigation The ceramic layer of the ceramic layer and the thickness of the ceramic layer according to the position along the main surface of the outer layer portion are smaller than the inner electrode layer of the inner electrode layer of the thermal shock absorbing portion; and the thermal shock absorbing portion satisfies the following Necessary conditions: the CV value of the thickness of the ceramic layer is 15% or less, and the CV value of the thickness of the internal electrode layer of at least one layer is 40% or more, and the CV value of the distance between the midpoints when one ceramic layer adjacent to each other is observed 40% or more; therefore, it can provide high resistance to thermal shock, for example, in the case of a laminated ceramic capacitor, it is small but can obtain a large electrostatic capacitance and is highly reliable and small. High performance laminated ceramic electronic parts.

即,本發明之積層陶瓷電子零件中,因(a)陶瓷層彎曲;且(b)厚度根據沿1層內部電極層內之外層部之主面之方向上之位置而平滑地變化(具有厚度分佈),故可有效率地使熱衝擊分散,從而可提高耐熱衝擊性。 That is, in the laminated ceramic electronic component of the present invention, (a) the ceramic layer is curved; and (b) the thickness is smoothly changed according to the position in the direction of the main surface of the outer layer portion in the inner electrode layer of the first layer (having a thickness) The distribution) can efficiently disperse the thermal shock, thereby improving the thermal shock resistance.

又,因內部電極層之熱衝擊緩和部及通常積層部中之任一者的連續性均較高且無間斷,故例如於積層陶瓷電容器之情形時,可獲得小型但能夠獲得較大之靜電電容的高特性之積層陶瓷電子零件。 Further, since the continuity of the thermal shock absorbing portion and the normal laminated portion of the internal electrode layer is high and uninterrupted, for example, in the case of a laminated ceramic capacitor, it is possible to obtain a small size but to obtain a large static electricity. Multilayer ceramic electronic parts with high capacitance.

1(1a、1b)‧‧‧陶瓷層 1 (1a, 1b) ‧ ‧ ceramic layer

2(2a、2b)‧‧‧內部電極層 2 (2a, 2b) ‧ ‧ internal electrode layer

10‧‧‧積層部 10‧‧‧Ministry Department

11‧‧‧衝擊緩和部 11‧‧‧ Impact mitigation department

12‧‧‧通常積層部 12‧‧‧ Usually the Ministry of Construction

20(20a、20b)‧‧‧外層部 20 (20a, 20b) ‧ ‧ outer layer

30‧‧‧積層體 30‧‧‧Layered body

31(31a、31b)‧‧‧積層體之端面 31 (31a, 31b) ‧ ‧ end face of laminated body

33(33a、33b)‧‧‧外部電極 33 (33a, 33b) ‧ ‧ external electrodes

102‧‧‧外部電極 102‧‧‧External electrode

103‧‧‧積層體 103‧‧‧Layered body

105‧‧‧內部電極層 105‧‧‧Internal electrode layer

106‧‧‧內部電極層 106‧‧‧Internal electrode layer

107‧‧‧陶瓷層 107‧‧‧Ceramic layer

108‧‧‧第二陶瓷粒子 108‧‧‧Second ceramic particles

Lp1‧‧‧相對於切線Lt1之垂線 Lp 1 ‧‧‧ is perpendicular to the tangent to the tangent Lt 1

Lp2‧‧‧相對於參照線Lr1之垂線 Lp 2 ‧‧‧ perpendicular to the reference line Lr 1

Lp3‧‧‧相對於參照線Lr2之垂線 Lp 3 ‧‧‧ perpendicular to the reference line Lr 2

Lt1‧‧‧相對於陶瓷層引出之切線 Lt 1 ‧‧‧ tangent to the ceramic layer

Lt2‧‧‧與切線Lt1平行之線 Lt 2 ‧‧‧ parallel to the tangent Lt 1

Lr1、Lr2‧‧‧參照線 Lr 1 , Lr 2 ‧‧‧ reference line

P1‧‧‧陶瓷層與內部電極層之界面之適當的點 P 1 ‧‧‧ Appropriate points of the interface between the ceramic layer and the internal electrode layer

P2‧‧‧陶瓷層之相反側之面與內部電極層之界面的交點 P 2 ‧‧‧ the intersection of the opposite side of the ceramic layer and the interface of the internal electrode layer

P3‧‧‧內部電極層之一主面與垂線Lp2之交點 P 3 ‧‧‧Intersection of one of the main faces of the internal electrode layer and the perpendicular line Lp 2

P4‧‧‧內部電極層之另一主面與垂線Lp2之交點 P 4 ‧‧‧ the intersection of the other main surface of the internal electrode layer and the perpendicular line Lp 2

Pc1、Pc2‧‧‧中點 Pc 1 , Pc 2 ‧‧‧ midpoint

圖1係表示本發明之實施形態之積層陶瓷電子零件(積層陶瓷電容器)的剖視圖。 Fig. 1 is a cross-sectional view showing a laminated ceramic electronic component (multilayer ceramic capacitor) according to an embodiment of the present invention.

圖2係表示放大本發明之實施形態之積層陶瓷電容器之主要部分的圖。 Fig. 2 is a view showing an enlarged main portion of a multilayer ceramic capacitor according to an embodiment of the present invention.

圖3係說明本發明之實施形態之積層陶瓷電容器之陶瓷層之厚度之測定方法的圖。 Fig. 3 is a view for explaining a method of measuring the thickness of a ceramic layer of a multilayer ceramic capacitor according to an embodiment of the present invention.

圖4係說明本發明之實施形態之積層陶瓷電容器之內部電極層之厚度之測定方法的圖。 Fig. 4 is a view for explaining a method of measuring the thickness of the internal electrode layer of the multilayer ceramic capacitor according to the embodiment of the present invention.

圖5係說明本發明之實施形態之積層陶瓷電容器之相互鄰接的陶瓷層之中點間距離之測定方法的圖。 Fig. 5 is a view for explaining a method of measuring the distance between points of mutually adjacent ceramic layers of the multilayer ceramic capacitor according to the embodiment of the present invention.

圖6係表示對於本發明之實施例中製作之條件1下的積層陶瓷電容器(實施例之試樣)進行樹脂固定研磨而露出之剖面(LT剖面)之金屬顯微鏡照片的圖。 Fig. 6 is a view showing a metal microscope photograph of a cross section (LT cross section) in which a multilayer ceramic capacitor (sample of the example) produced under the condition 1 produced in the example of the present invention is subjected to resin fixation polishing.

圖7係表示對於本發明之實施例中製作之條件5下的積層陶瓷電容器(比較例之試樣)進行樹脂固定研磨而露出之剖面(LT剖面)之金屬顯微鏡照片的圖。 Fig. 7 is a view showing a metal microscope photograph of a cross section (LT cross section) in which a multilayer ceramic capacitor (a sample of a comparative example) under the condition 5 produced in the example of the present invention is subjected to resin fixation polishing.

圖8係表示先前之積層陶瓷電容器之例的部分缺失立體圖。 Fig. 8 is a partially broken perspective view showing an example of a prior art laminated ceramic capacitor.

圖9係表示圖7之積層陶瓷電容器之A部的主要部分放大剖視圖。 Fig. 9 is an enlarged cross-sectional view showing a main portion of a portion A of the multilayer ceramic capacitor of Fig. 7.

以下揭示本發明之實施形態,並對成為本發明之特徵之處進行更詳細的說明。 The embodiments of the present invention are disclosed below, and the features of the present invention will be described in more detail.

圖1係表示本發明之一實施形態之積層陶瓷電子零件(晶片型之積層陶瓷電容器)之構成的剖視圖;圖2係放大並表示其主要部分之圖。 1 is a cross-sectional view showing a configuration of a multilayer ceramic electronic component (a wafer type multilayer ceramic capacitor) according to an embodiment of the present invention; and FIG. 2 is an enlarged view of a main part thereof.

如圖1及2所示,該積層陶瓷電容器包括:積層部10,其具有經積層之複數層陶瓷層1與位於陶瓷層1之間的內部電極層2;及外層部20(20a、20b),其具有以自沿積層方向夾入積層部10之方式而配設且不包括內部電極的1層以上之陶瓷層。 As shown in FIGS. 1 and 2, the multilayer ceramic capacitor includes a laminate portion 10 having a laminated plurality of ceramic layers 1 and an internal electrode layer 2 between the ceramic layers 1, and an outer layer portion 20 (20a, 20b). It has one or more ceramic layers which are disposed so as to sandwich the laminated portion 10 from the lamination direction and do not include internal electrodes.

並且,於如上所述包括積層部10與外層部20之積層體30的一對端面31(31a、31b),分別露出複數個內部電極2之各端部,且以導通該等內部電極2之方式而形成一對外部電極33(33a、33b)。 Further, in the pair of end faces 31 (31a, 31b) including the laminated body 30 of the laminated portion 10 and the outer layer portion 20 as described above, the respective end portions of the plurality of internal electrodes 2 are exposed, and the internal electrodes 2 are turned on. A pair of external electrodes 33 (33a, 33b) are formed in this manner.

又,如圖2所示,上述積層部10之中,包括鄰接於外層部20之區域之外層部附近區域係構成熱衝擊緩和部11,該熱衝擊緩和部11包括彎曲之陶瓷層1(1a)、及厚度根據沿外層部20之主面之方向上之位置而平滑地變化的內部電極層2(2a)。 Further, as shown in FIG. 2, the region of the laminated portion 10 including the region adjacent to the region of the outer layer portion 20 constitutes a thermal shock absorbing portion 11 including a curved ceramic layer 1 (1a). And the internal electrode layer 2 (2a) whose thickness is smoothly changed according to the position in the direction along the principal surface of the outer layer portion 20.

又,如圖2所示,積層部10之中,較上述熱衝擊緩和部11更靠內側之區域係構成通常積層部12,該通常積層部12包括:陶瓷層1(1b),其彎曲之程度小於熱衝擊緩和部11之陶瓷層1(1a);及內部電極層2(2b),其根據沿外層部20之主面之方向上之位置而產生的厚度之變化之程度小於熱衝擊緩和部11之內部電極層2(2a)(圖2)。 Further, as shown in FIG. 2, in the laminated portion 10, a region further inside than the thermal shock relaxing portion 11 constitutes a normal laminated portion 12 including a ceramic layer 1 (1b) which is curved. The degree of change of the thickness of the ceramic layer 1 (1a) and the internal electrode layer 2 (2b) which are less than the thermal shock mitigation portion 11 in accordance with the position in the direction of the main surface of the outer layer portion 20 is smaller than the thermal shock mitigation. Internal electrode layer 2 (2a) of portion 11 (Fig. 2).

並且,熱衝擊緩和部11中存在之陶瓷層1(1a)之厚度之CV值設均為15%以下。 Further, the CV value of the thickness of the ceramic layer 1 (1a) existing in the thermal shock absorbing portion 11 is set to be 15% or less.

又,熱衝擊緩和部11中存在之內部電極層2(2a)之中,至少1層係以厚度之CV值成為40%以上之方式而構成。 Further, at least one of the internal electrode layers 2 (2a) existing in the thermal shock absorbing portion 11 is configured such that the CV value of the thickness is 40% or more.

進而,以如下之方式構成:將對熱衝擊緩和部11中存在之相互鄰接之一對陶瓷層2(2a)觀察時、位於一陶瓷層及另一陶瓷層2(2a)之厚度方向之中央的點沿積層部10積層方向而連接的直線之長度、即中點間距離之CV值成為40%以上。 Further, it is configured to be located in the center of the thickness direction of one ceramic layer and the other ceramic layer 2 (2a) when the ceramic layer 2 (2a) adjacent to each other existing in the thermal shock absorbing portion 11 is observed. The CV value of the length of the straight line which is connected along the lamination direction of the laminated portion 10, that is, the distance between the midpoints is 40% or more.

又,通常積層部12中存在之陶瓷層1(1b)之厚度之CV值設均為15%以下。 Further, the CV value of the thickness of the ceramic layer 1 (1b) existing in the laminated portion 12 is usually 15% or less.

又,通常積層部12中存在之內部電極層2(2b)之厚度之CV值設均為20%以下。 Further, the CV value of the thickness of the internal electrode layer 2 (2b) existing in the laminated portion 12 is usually 20% or less.

進而,將對通常積層部12中存在之相互鄰接之一對陶瓷層1(1b)觀察時、位於一陶瓷層及另一陶瓷層1之厚度方向之中央的點沿積層部10之積層方向而連接的直線之長度、即中點間距離之CV值為20%以下。 Further, when the ceramic layer 1 (1b) is adjacent to each other in the normal laminated portion 12, the point in the center of the thickness direction of one ceramic layer and the other ceramic layer 1 is along the lamination direction of the laminated portion 10. The length of the connected straight line, that is, the distance between the midpoints, has a CV value of 20% or less.

如此構成之本發明之實施形態之積層陶瓷電容器中,於熱衝擊緩和部11中,因為(1)陶瓷層1(1a)彎曲、且(2)厚度根據沿1層內部電極層2(2a)內之外層部20之主面之方向上之位置而平滑地變化(具有厚度分佈),故可有效率地使熱衝擊分散,從而可提高耐熱衝擊性。 In the multilayer ceramic capacitor according to the embodiment of the present invention, the ceramic layer 1 (1a) is bent and (2) the thickness is based on the internal electrode layer 2 (2a) along the first layer. Since the position of the inner surface of the inner layer portion 20 is smoothly changed (having a thickness distribution), the thermal shock can be efficiently dispersed, and the thermal shock resistance can be improved.

尤其是於陶瓷層1(1a)之彎曲之狀態及內部電極之厚度之變化之狀態不規則(無規)的情形時,可更有效率地使熱衝擊分散,故較佳。 In particular, when the state of the bending of the ceramic layer 1 (1a) and the change in the thickness of the internal electrode are irregular (random), the thermal shock can be more efficiently dispersed, which is preferable.

又,因通常積層部12中之內部電極層2(2b)及熱衝擊緩和部11中之內部電極層2(2a)中內部電極2均無間斷,確保了連續性,故可為小型且獲得較大之靜電電容。 In addition, since the internal electrode layer 2 (2b) in the laminated portion 12 and the internal electrode 2 in the internal electrode layer 2 (2a) in the thermal shock absorbing portion 11 are not interrupted, continuity is ensured, so that it can be small and obtained. Larger electrostatic capacitance.

進而,因將通常積層部12中之陶瓷層1(1b)、內部電極層2(2b)及中間點距離以如上所述之方式進行調整,故可確實地提供具有所需之特性的積層陶瓷電子零件。 Further, since the ceramic layer 1 (1b), the internal electrode layer 2 (2b), and the intermediate point distance in the normal laminated portion 12 are adjusted as described above, the laminated ceramic having the desired characteristics can be surely provided. Electronic parts.

再者,熱衝擊緩和部11中之(a)陶瓷層1(1a)之厚度之CV值;及 (b)內部電極層2(2a)之厚度之CV值;及(c)相互鄰接之一對陶瓷層1(1a)之中點間距離之CV值 Further, the CV value of the thickness of the (a) ceramic layer 1 (1a) in the thermal shock absorbing portion 11; (b) the CV value of the thickness of the internal electrode layer 2 (2a); and (c) the CV value of the distance between the points of the ceramic layer 1 (1a) adjacent to each other

係藉由以下說明之方法而求出。 It is obtained by the method described below.

又,通常積層部12中之(a')陶瓷層1(1b)之厚度之CV值;及(b')內部電極層2(2b)之厚度之CV值;及(c')相互鄰接之一對陶瓷層1(1b)之中點間距離之CV值 Further, generally, the CV value of the thickness of the (a') ceramic layer 1 (1b) in the laminated portion 12; and (C') the CV value of the thickness of the internal electrode layer 2 (2b); and (c') are adjacent to each other. CV value of the distance between points in a pair of ceramic layers 1 (1b)

亦藉由以下說明之方法而求出。 It is also obtained by the method described below.

<1>用以測定陶瓷層及內部電極層之厚度的試樣之預處理 <1> Pretreatment of a sample for measuring the thickness of the ceramic layer and the internal electrode layer

藉由將作為試樣之積層陶瓷電容器藉由樹脂固定並研磨(以下亦簡稱為「樹脂固定研磨」),研磨積層陶瓷電容器之元件之與高度(積層)方向及長度方向平行的面(LT面),並使所獲得之研磨端面露出。 By laminating and polishing the laminated ceramic capacitor as a sample (hereinafter also referred to as "resin fixed polishing"), the surface of the laminated ceramic capacitor is parallel to the height (layer) direction and the longitudinal direction (LT surface). ) and expose the obtained polished end face.

但亦能以積層陶瓷電容器之元件之與高度(積層)方向及寬度方向平行的面(WT面)進行厚度測定。 However, the thickness can also be measured on a surface (WT surface) in which the elements of the multilayer ceramic capacitor are parallel to the height (layer) direction and the width direction.

另一方面,準備0.5mol%之FeCl3水溶液(氯化鐵溶液)。 On the other hand, 0.5 mol% of an aqueous FeCl 3 solution (iron chloride solution) was prepared.

並且,將經樹脂固定研磨之積層陶瓷電容器浸漬於該氯化鐵溶液中30秒,使露出於研磨端面之內部電極層(Ni電極層)溶出(化學蝕刻)。 Then, the multilayer ceramic capacitor fixed by the resin was immersed in the ferric chloride solution for 30 seconds, and the internal electrode layer (Ni electrode layer) exposed on the polished end surface was eluted (chemical etching).

此時,因與內部電極層溶出之量相應地於研磨端面形成凹部,故內部電極層與陶瓷層之界面變得明確。 At this time, since the concave portion is formed on the polishing end surface in accordance with the amount of elution of the internal electrode layer, the interface between the internal electrode layer and the ceramic layer becomes clear.

並且,利用SEM(Scanning Electron Microscope,掃描式電子顯微鏡)觀察已實施化學蝕刻處理之積層陶瓷電容器之研磨端面,並獲得3000~5000倍之SEM圖像。 Further, the polished end face of the multilayer ceramic capacitor subjected to the chemical etching treatment was observed by a SEM (Scanning Electron Microscope), and an SEM image of 3,000 to 5,000 times was obtained.

其次,利用所獲得之SEM圖像進行以下說明之測定。 Next, the measurement described below was carried out using the obtained SEM image.

<2>陶瓷層之厚度之測定 <2> Determination of the thickness of the ceramic layer

以下,參考圖3對陶瓷層之厚度之測定方法進行說明。 Hereinafter, a method of measuring the thickness of the ceramic layer will be described with reference to Fig. 3 .

於陶瓷層1(1a、1b)與內部電極層2(2a、2b)之界面適當地取點P1,於該點相對於陶瓷層引出切線Lt1。相對於該切線Lt1作垂線Lp1並使之向陶瓷層1之相反側之面(界面)延長,求得與界面之交點P2。通過該交點P2且與最初之切線Lt1平行地引出線Lt2。測定該等平行之2條直線Lt1、Lt2之間的距離,求出陶瓷層之厚度。 A point P 1 is appropriately taken at the interface between the ceramic layer 1 (1a, 1b) and the internal electrode layer 2 (2a, 2b), at which point a tangent Lt 1 is drawn with respect to the ceramic layer. Lt of a tangent line with respect to the perpendicular line Lp 1 make for extended as to face the opposite side of the ceramic layer 1 (interface), the interface of the determined intersection point P 2. By this intersection point P 2 and tangential to the initial Lt 1 of parallel lead Lt 2. The distance between the two parallel straight lines Lt 1 and Lt 2 was measured, and the thickness of the ceramic layer was determined.

再者,測定係針對熱衝擊緩和部11之彎曲之陶瓷層1(1a)、通常積層部12之彎曲之程度小於熱衝擊緩和部11之陶瓷層1(1a)的陶瓷層1(1b),均係對於每一層陶瓷層進行20點之測定。 Further, the measurement is performed on the ceramic layer 1 (1a) which is bent by the thermal shock absorbing portion 11, and the layered portion 12 is usually bent to a degree smaller than the ceramic layer 1 (1b) of the ceramic layer 1 (1a) of the thermal shock absorbing portion 11. Each of the ceramic layers was measured at 20 points.

並且,自該等測定資料求出陶瓷層之厚度之平均值、標準偏差及CV值((標準偏差/平均值)×100(%))。 Further, the average value, the standard deviation, and the CV value ((standard deviation/average value) × 100 (%))) of the thickness of the ceramic layer were determined from the measurement data.

再者,就熱衝擊緩和部11之彎曲之陶瓷層1(1a)、通常積層部12之陶瓷層1(1b)中之任一層而言,均分別對3層陶瓷層進行測定,求出最大CV值。 Further, in each of the ceramic layer 1 (1a) in which the thermal shock absorbing portion 11 is bent and the ceramic layer 1 (1b) in the laminated portion 12, the three ceramic layers are each measured to determine the maximum. CV value.

<3>內部電極層之厚度之測定 <3> Determination of Thickness of Internal Electrode Layer

以下,參考圖4對內部電極層之厚度之測定方法進行說明。 Hereinafter, a method of measuring the thickness of the internal electrode layer will be described with reference to FIG.

以與根據沿外層部之主面之方向上之位置而產生的厚度之變化程度較小的內部電極層2、即通常積層部12之內部電極層2(2a)大致平行之方式,引出參照線Lr1(位置任意)。圖4中,於外層部20(20a)引出參照線Lr1,但因SEM圖像之一視野內有時不包括外層部20,故有時亦於積層部10引出。 The reference electrode is drawn in such a manner that the inner electrode layer 2, which is a small degree of change in thickness according to the position in the direction of the main surface of the outer layer portion, is substantially parallel to the inner electrode layer 2 (2a) of the laminated portion 12 Lr 1 (position is arbitrary). In FIG. 4, 20 in the outer portion (20a) drawn reference line Lr 1, but the field of view of SEM image may not include one outer layer portion 20, it may also lead to a build-up portion 10.

之後,相對於參照線Lr1作垂線Lp2。測定位於該垂線Lp2上之內部電極層2(2a、2b)之一者之主面與垂線Lp2之交點P3和內部電極層2之另一者之主面與垂線Lp2之交點P4連接而成之直線的長度(即P3與P4之間的距離),作為內部電極層2(2a、2b)之厚度。 Thereafter, a perpendicular line Lp 2 is formed with respect to the reference line Lr 1 . Determination located on the perpendicular line Lp internal electrode layers 2 (2a, 2b) with a main surface perpendicular Lp those of the other main surface 2 of the intersection point of the perpendicular line Lp by one of 2 P 3 and the internal electrode layer 2 of the point of intersection P The length of the straight line connecting 4 (i.e., the distance between P 3 and P 4 ) is the thickness of the internal electrode layer 2 (2a, 2b).

對於熱衝擊緩和部11之厚度平滑地變化之內部電極層2(2a)、厚度變化程度小於熱衝擊緩和部11之內電極層2(2a)之通常積層部12的 內部電極層2(2b)而言,均係針對每一層內部電極層2(2a、2b)進行20點之測定。 The internal electrode layer 2 (2a) whose thickness of the thermal shock absorbing portion 11 is smoothly changed, and the degree of thickness change is smaller than the normal laminated portion 12 of the internal electrode layer 2 (2a) of the thermal shock absorbing portion 11. The internal electrode layer 2 (2b) was measured at 20 points for each of the internal electrode layers 2 (2a, 2b).

自該資料求出內部電極層2(2a、2b)之平均值、標準偏差及CV值((標準偏差/平均值)×100(%))。 The average value, standard deviation, and CV value ((standard deviation/average value) × 100 (%)) of the internal electrode layers 2 (2a, 2b) were obtained from this data.

再者,就熱衝擊緩和部11之內部電極層2(2a)、通常積層部12之內部電極層2(2b)之任一層而言,亦分別就3層內部電極層2(2a、2b)進行測定。 Further, in the internal electrode layer 2 (2a) of the thermal shock absorbing portion 11, and the internal electrode layer 2 (2b) of the laminated portion 12, respectively, three internal electrode layers 2 (2a, 2b) are also formed. The measurement was carried out.

並且,就熱衝擊緩和部11之內部電極層2(2a)而言,將3組之中最大的CV值設為熱衝擊緩和部11之內部電極層2(2a)之厚度的最大CV值。 Further, in the internal electrode layer 2 (2a) of the thermal shock absorbing portion 11, the maximum CV value among the three groups is the maximum CV value of the thickness of the internal electrode layer 2 (2a) of the thermal shock absorbing portion 11.

又,就通常積層部12之內部電極層2(2b)而言,將3組之中最大的CV值設為通常積層部12之內部電極層2(2b)之厚度的最大CV值。 In addition, in the internal electrode layer 2 (2b) of the laminated portion 12, the maximum CV value among the three groups is the maximum CV value of the thickness of the internal electrode layer 2 (2b) of the normal laminated portion 12.

<4>相互鄰接之陶瓷層中之中點間距離的測定 <4> Determination of the distance between the midpoints of ceramic layers adjacent to each other

以下,參考圖5對相互鄰接之2層陶瓷層之中點間距離之測定方法進行說明。 Hereinafter, a method of measuring the distance between dots in two ceramic layers adjacent to each other will be described with reference to FIG.

以與通常積層部12之陶瓷層1(1b)大致平行之方式,引出參照線Lr2(位置任意)。圖5中係於外層部20(20a)引出參照線Lr2,但因SEM圖像之一視野內有時不包括外層部20,故有時亦於積層部10引出。 The reference line Lr 2 (arbitrary position) is drawn so as to be substantially parallel to the ceramic layer 1 (1b) of the normal laminated portion 12. In FIG. 5, the reference line Lr 2 is drawn from the outer layer portion 20 (20a). However, since the outer layer portion 20 is not included in the field of view of the SEM image, it may be taken out at the layered portion 10.

之後,相對於參照線Lr2作垂線Lp3Thereafter, a perpendicular line Lp 3 is formed with respect to the reference line Lr2.

其次,指定相互鄰接之一個及另一個2層陶瓷層1(1a、1b)的中點Pc1、Pc2。中點Pc1、Pc2係位於2層陶瓷層11(1a、1b)之厚度方向之中央的點,且位於上述垂線Lp3上。 Next, the midpoints Pc 1 and Pc 2 of one and the other two ceramic layers 1 (1a, 1b) adjacent to each other are designated. The midpoints Pc 1 and Pc 2 are located at the center of the thickness direction of the two ceramic layers 11 (1a, 1b) and are located on the above-mentioned perpendicular line Lp 3 .

並且,測定指定之2個中點Pc1、Pc2間之距離(中點間距離)。 Then, the distance between the designated two midpoints Pc 1 and Pc 2 (distance between the midpoints) is measured.

在進行中點間距離之測定時,就熱衝擊緩和部11之彎曲之陶瓷層1(1a)、及彎曲之程度小於熱衝擊緩和部11之陶瓷層1(1a)的通常積層部12之陶瓷層1(1b)而言,對鄰接之一組陶瓷層分別進行20點之中點 間距離之測定。 When the distance between the midpoints is measured, the ceramic layer 1 (1a) which is bent by the thermal shock absorbing portion 11 and the ceramic which is bent to a degree smaller than the normal laminated portion 12 of the ceramic layer 1 (1a) of the thermal shock mitigation portion 11 are smaller. For layer 1 (1b), a point of 20 points is adjacent to one of the adjacent ceramic layers. Determination of the distance between the two.

並且,自該等測定資料求出中間點距離之平均值、標準偏差、及CV值((標準偏差/平均值)×100(%))。 Further, the average value, the standard deviation, and the CV value ((standard deviation/average value) × 100 (%))) of the intermediate point distance were obtained from the measurement data.

再者,就熱衝擊緩和部11之彎曲之陶瓷層1(1a)、通常積層部12之陶瓷層1(1b)中之任一層而言,均係針對3組之陶瓷層進行中點間距離之測定。並且,關於熱衝擊緩和部11中之中點間距離,係求出3組之中最大的中點間距離之CV值;關於通常部積層部12亦求出3組之中最大的中點間距離之CV值。 Further, in the ceramic layer 1 (1a) which is bent by the thermal shock absorbing portion 11, and the ceramic layer 1 (1b) which is usually the laminated portion 12, the interlayer distance is determined for the ceramic layers of the three groups. Determination. Further, regarding the inter-point distance in the thermal shock mitigation unit 11, the CV value of the maximum midpoint distance among the three groups is obtained, and the normal mid-layer layer 12 is also obtained among the largest midpoints among the three groups. The CV value of the distance.

<5>把握本發明之積層陶瓷電子零件中之熱衝擊緩和部及通常積層部之狀態的方法及順序 <5> Method and sequence for grasping the state of the thermal shock absorbing portion and the normal laminated portion in the laminated ceramic electronic component of the present invention

(1)利用上述方法,對於熱衝擊緩和部測定彎曲之陶瓷層之厚度、及厚度平滑地變化之內部電極層之厚度,且求出平均值、標準偏差、CV值((標準偏差/平均值)×100(%))。 (1) The thickness of the curved ceramic layer and the thickness of the internal electrode layer whose thickness is smoothly changed are measured by the thermal shock absorbing portion by the above method, and the average value, standard deviation, and CV value are obtained ((standard deviation/average value) ) × 100 (%)).

(2)其次,利用上述方法,測定通常積層部之彎曲程度較小之陶瓷層的厚度及根據位置而產生的厚度之變化之程度較小的內部電極層之厚度,且求出平均值、標準偏差、CV值((標準偏差/平均值)×100(%))。 (2) Next, by using the above method, the thickness of the internal electrode layer having a small thickness of the ceramic layer having a small degree of bending of the laminated portion and a small change in thickness depending on the position is measured, and an average value and a standard are obtained. Deviation, CV value ((standard deviation / average) × 100 (%)).

(3)因陶瓷層之厚度及內部電極層之厚度可任意選擇,故對於熱衝擊緩和部及通常積層部可分別以CV值定義陶瓷層厚度及內部電極厚度。 (3) Since the thickness of the ceramic layer and the thickness of the internal electrode layer can be arbitrarily selected, the thickness of the ceramic layer and the thickness of the internal electrode can be defined by the CV value for the thermal shock absorbing portion and the usual laminated portion, respectively.

(4)若測定陶瓷層之厚度,則可求出厚度之中點。因此,利用上述方法,分別對於熱衝擊緩和部及通常積層部測定鄰接之陶瓷層之厚度之中點間距離,自所獲得之測定資料求出平均值、標準偏差,且自標準偏差算出CV值。 (4) When the thickness of the ceramic layer is measured, the midpoint of the thickness can be obtained. Therefore, by the above method, the distance between the points of the adjacent ceramic layers is measured for the thermal shock absorbing portion and the normal laminated portion, and the average value and the standard deviation are obtained from the obtained measurement data, and the CV value is calculated from the standard deviation. .

(5)並且,依據陶瓷層之厚度之中點間距離的CV值於通常積層部及熱衝擊緩和部中不同,可知熱衝擊緩和部之陶瓷層彎曲,並且,自 CV值之差可知彎曲之程度(狀況)。 (5) Further, the CV value of the distance between the points of the thickness of the ceramic layer is different between the normal laminated portion and the thermal shock absorbing portion, and it is understood that the ceramic layer of the thermal shock absorbing portion is curved and The difference in CV value indicates the degree of bending (condition).

又,依據熱衝擊緩和部之內部電極層之厚度的CV值超過20%,可知內部電極層之厚度之位置根據沿外層部之主面之方向上的位置而變化;依據內部電極層之厚度的CV值為40%以上,可知具有充分之厚度分佈。 Further, the CV value of the thickness of the internal electrode layer of the thermal shock relaxation portion exceeds 20%, and it is understood that the position of the thickness of the internal electrode layer varies depending on the position in the direction of the main surface of the outer layer portion; depending on the thickness of the internal electrode layer When the CV value is 40% or more, it is known that it has a sufficient thickness distribution.

以下,表示實施例而對本案發明更具體地進行說明。 Hereinafter, the present invention will be more specifically described by showing an embodiment.

[實施例] [Examples]

該實施例中,製造晶片型之積層陶瓷電容器作為積層陶瓷電子零件,且檢查焙燒步驟中之焙燒升溫速度與積層部之結構、熱衝擊試驗中之裂痕產生率、靜電電容之關係等。 In this embodiment, a wafer type multilayer ceramic capacitor is produced as a laminated ceramic electronic component, and the relationship between the firing rate of the baking in the baking step and the structure of the laminated portion, the crack generation rate in the thermal shock test, and the electrostatic capacitance are examined.

(A)陶瓷層(介電層)用之陶瓷原料粉末之製作 (A) Fabrication of ceramic raw material powder for ceramic layer (dielectric layer)

首先,藉由以下之順序製作作為介電層而發揮功能的陶瓷層用之原料粉末(陶瓷原料粉末)。 First, a raw material powder (ceramic raw material powder) for a ceramic layer functioning as a dielectric layer is produced in the following order.

首先,以Ba與Ti之比(Ba/Ti)成為1.001之方式秤量BaCO3粉末與TiO2粉末,藉由使用氧化鋯球之研磨機進行濕式粉碎並混合。 First, BaCO 3 powder and TiO 2 powder were weighed so that the ratio of Ba to Ti (Ba/Ti) became 1.001, and wet pulverization and mixing were carried out by using a zirconia ball mill.

之後,使其乾燥後加熱至900℃以上進行熱處理(預燒),藉此製作平均粒子徑為0.20μm之鈣鈦碘型複合氧化物(BaTiO3系陶瓷粉末)。 Thereafter, the mixture was dried, heated to 900 ° C or higher, and heat-treated (pre-fired) to prepare a calcium-titanium-iodine composite oxide (BaTiO 3 -based ceramic powder) having an average particle diameter of 0.20 μm.

相對於100莫耳份之該BaTiO3系陶瓷粉末,作為粉末分別添加0.6莫耳份之Dy2O3、1.2莫耳份之MgCO3、0.2莫耳份之MnCO3、1.0莫耳份之BaCO3,進而添加以SiO2換算為0.7莫耳份之SiO2溶膠,藉由使用氧化鋯球之研磨機進行粉碎並混合,藉此製作陶瓷層(介電層)用之陶瓷原料粉末。 0.6 mol of Dy 2 O 3 , 1.2 mol of MgCO 3 , 0.2 mol of MnCO 3 , 1.0 mol of BaCO were added as a powder to 100 parts per million of the BaTiO 3 -based ceramic powder. 3, in terms of SiO 2 was further added 0.7 parts by mole of SiO 2 sol, zirconia balls by using the pulverizing mill and mixed, thereby making the ceramic powder of ceramic raw material layer (dielectric layer) with it.

(B)Ni膏之製作 (B) Production of Ni cream

使平均粒子徑為0.25μm之Ni粉末、有機媒劑(乙基纖維素/松脂醇=1/9(重量比))及松脂醇混合,使用三輥研磨機進行分散、混合處理,藉此製作用於內部電極層之形成的Ni膏。 Ni powder having an average particle diameter of 0.25 μm, an organic vehicle (ethylcellulose/rosinol = 1/9 (weight ratio)), and rosin were mixed, and dispersed and mixed using a three-roll mill to prepare A Ni paste for the formation of an internal electrode layer.

(C)積層陶瓷電容器之製作 (C) Fabrication of multilayer ceramic capacitors

(C-1)於以上述方式製作之陶瓷原料粉末中添加聚丁醛系黏合劑及塑化劑,並加入甲苯及乙醇,藉由利用氧化鋯(ZrO2)球之研磨機使之漿料化,且藉由凹版塗佈機成形為厚度為1.9μm之片狀,藉此獲得陶瓷生片。 (C-1) A polybutyraldehyde-based binder and a plasticizer are added to the ceramic raw material powder prepared in the above manner, and toluene and ethanol are added, and the slurry is made by using a zirconia (ZrO 2 ) ball mill. The sheet was formed into a sheet having a thickness of 1.9 μm by a gravure coater, whereby a ceramic green sheet was obtained.

(C-2)之後,於該陶瓷生片上絲網印刷以上述方式製作之Ni膏,形成成為內部電極(層)之導電膏圖案。 After (C-2), the Ni paste prepared in the above manner was screen-printed on the ceramic green sheet to form a conductive paste pattern to be an internal electrode (layer).

(C-3)其後,將形成有導電膏圖案之陶瓷生片,以引出該導電膏圖案之側交替為相反側之方式積層300片。並且,以自兩面側夾入所形成之積層結構體之方式,堆積特定片的未形成有導體膏圖案(內部電極層)之外層部用陶瓷生片而製作積層區塊。 (C-3) Thereafter, a ceramic green sheet having a conductive paste pattern was formed, and 300 sheets were laminated in such a manner that the sides of the conductive paste pattern were alternately turned to the opposite side. In addition, a ceramic green sheet for a layer portion other than the conductor paste pattern (internal electrode layer) in which a specific sheet is not formed is deposited so as to sandwich the formed laminated structure from both sides, thereby forming a laminated block.

(C-4)之後,以藉由燒結而緻密化之後之尺寸成為長度L:2.0mm、寬度W:1.25mm的大小之積層體(生積層晶片)之方式,切分該積層區塊。 After (C-4), the laminated body was cut into a laminated body (raw layer wafer) having a length L of 2.0 mm and a width W of 1.25 mm after being densified by sintering.

並且,將獲得之生積層晶片於N2氣流中加熱至280℃,燃燒去除黏合劑。繼而,於N2-H2-H2O氣流中持續加熱直至成為以碳換算為1000ppm以下為止,充分燃燒去除黏合劑。 Further, the obtained green laminated wafer was heated to 280 ° C in a stream of N 2 to burn off the binder. Then, heating is continued in the N 2 -H 2 -H 2 O gas flow until it is 1000 ppm or less in terms of carbon, and the binder is sufficiently burned and removed.

(C-5)其後,於N2中在平均升溫速度為40℃/秒、最高溫度為1220℃及滯留時間為10秒之條件下進行焙燒,藉此獲得燒結結束之積層體(積層陶瓷電容器元件)。 (C-5) Thereafter, calcination was carried out in N 2 under conditions of an average temperature increase rate of 40 ° C / sec, a maximum temperature of 1220 ° C, and a residence time of 10 seconds, thereby obtaining a laminated body having a sintered end (layered ceramics) Capacitor component).

(C-6)之後,於積層體之引出內部電極層之端面塗佈以銅為主要成分之導電膏,且於800℃下進行燒接,藉此形成外部電極。進而,於外部電極之表面藉由濕式鍍敷依序形成Ni鍍敷膜、Sn鍍敷膜。 After (C-6), a conductive paste containing copper as a main component was applied to the end surface of the laminated internal electrode layer of the laminate, and baked at 800 ° C to form an external electrode. Further, a Ni plating film or a Sn plating film was sequentially formed on the surface of the external electrode by wet plating.

藉此,如圖1及2所示,能獲得具有以內部電極2與積層體30之一對端面31(31a、31b)導通之方式配設有一對外部電極33(33a、33b)之構造的積層陶瓷電容器,該積層體30包括:積層部10,其具有經積層 之複數層陶瓷層1及位於陶瓷層1間之內部電極層2;及外層部20(20a、20b),其具有以夾入積層部10之方式而配設之陶瓷層。 As a result, as shown in FIGS. 1 and 2, it is possible to obtain a structure in which a pair of external electrodes 33 (33a, 33b) are disposed such that the inner electrode 2 and the laminated body 30 are electrically connected to the end faces 31 (31a, 31b). In the multilayer ceramic capacitor, the laminated body 30 includes: a laminate portion 10 having a laminated layer The plurality of ceramic layers 1 and the internal electrode layer 2 between the ceramic layers 1 and the outer layer portion 20 (20a, 20b) have a ceramic layer disposed so as to sandwich the laminated portion 10.

再者,所獲得之積層陶瓷電容器之陶瓷層(介電層)的厚度(元件厚)為1.6μm。 Further, the thickness (e.g. thickness) of the ceramic layer (dielectric layer) of the obtained multilayer ceramic capacitor was 1.6 μm.

再者,該實施例中係如上所述,於平均升溫速度=40℃/秒(條件1)之條件下進行焙燒而製作積層陶瓷電容器,但亦於以下之條件2~5之條件下進行焙燒而製作積層陶瓷電容器。 Further, in this example, as described above, firing was carried out under the conditions of an average temperature increase rate = 40 ° C / sec (Condition 1) to prepare a laminated ceramic capacitor, but it was also baked under the following conditions 2 to 5; And make a multilayer ceramic capacitor.

平均升溫速度:100℃/秒(條件2) Average heating rate: 100 ° C / sec (condition 2)

平均升溫速度:270℃/秒(條件3) Average heating rate: 270 ° C / sec (condition 3)

平均升溫速度:5℃/秒(條件4) Average heating rate: 5 ° C / sec (condition 4)

平均升溫速度:0.17℃/秒(條件5) Average heating rate: 0.17 ° C / sec (condition 5)

再者,條件2~5下之積層陶瓷電容器除如上所述使平均升溫速度不同以外,均於與上述條件1之情形之條件下而製作。 In addition, the multilayer ceramic capacitors of the conditions 2 to 5 were produced under the conditions of the above condition 1 except that the average temperature increase rate was different as described above.

(D)特性評估 (D) Characteristic evaluation

關於在上述條件1~5之各條件下製作之各積層陶瓷電容器,分別就100個試樣進行樹脂固定研磨,使積層陶瓷電容器之端面(LT端面)作為研磨端面而露出,並藉由金屬顯微鏡確認於自外層向積層部之中心之區域中的陶瓷層與內部電極層之狀態。 Each of the multilayer ceramic capacitors produced under the conditions of the above conditions 1 to 5 was subjected to resin fixed polishing for 100 samples, and the end faces (LT end faces) of the multilayer ceramic capacitor were exposed as polishing end faces, and were exposed by a metal microscope. The state of the ceramic layer and the internal electrode layer in the region from the outer layer to the center of the buildup portion was confirmed.

又,關於各積層陶瓷電容器,對於100個積層陶瓷電容器實施浸漬於325℃之焊料槽中2秒之熱衝擊試驗,藉由金屬顯微鏡觀察檢查有無裂痕產生。 Further, regarding each of the multilayer ceramic capacitors, 100 multilayer ceramic capacitors were subjected to a thermal shock test immersed in a solder bath of 325 ° C for 2 seconds, and the presence or absence of cracks was observed by metal microscope observation.

又,關於各積層陶瓷電容器,分別針對100個試樣,使用LCR測定儀(inductance capacitance resistance meter)於120Hz、0.5Vrms之條件下測定靜電電容。 Further, regarding each of the multilayer ceramic capacitors, the electrostatic capacitance was measured for each of 100 samples using an LCR measuring instrument at 120 Hz and 0.5 Vrms.

又,對於在上述條件1(平均升溫速度=40℃/秒)下製作之積層陶瓷電容器進行樹脂固定研磨,並將露出之研磨端面(LT端面)之金屬顯 微鏡照片表示於圖6。 Further, the multilayer ceramic capacitor produced under the above condition 1 (average temperature increase rate = 40 ° C / sec) was subjected to resin fixed polishing, and the exposed polished end face (LT end face) was exposed. The micrograph photo is shown in Figure 6.

又,表1中表示關於在上述條件1~5之條件下製作之積層陶瓷電容器而求出之如下值:(a)熱衝擊緩和部11中之陶瓷層1(1a)之厚度之CV值(之最大值);(b)熱衝擊緩和部11中之內部電極層2(2a)之厚度之CV值(之最大值);(c)熱衝擊緩和部11中之相互鄰接之一組陶瓷層1(1a)的中點間距離之CV值(之最大值);(d)通常積層部12中之陶瓷層1(1b)之厚度之CV值(之最大值);(e)通常積層部12中之內部電極層2(2b)之厚度之CV值(之最大值);(f)通常積層部12中之相互鄰接之一組陶瓷層1(1b)的中點間距離之CV值(之最大值);(g)熱衝擊試驗中之裂痕之產生率;(h)靜電電容之值。 Further, Table 1 shows the following values obtained for the multilayer ceramic capacitor produced under the conditions of the above conditions 1 to 5: (a) CV value of the thickness of the ceramic layer 1 (1a) in the thermal shock absorbing portion 11 ( (b) the CV value (the maximum value) of the thickness of the internal electrode layer 2 (2a) in the thermal shock mitigation portion 11; (c) a ceramic layer adjacent to each other in the thermal shock mitigation portion 11 The CV value (the maximum value) of the distance between the midpoints of 1(1a); (d) the CV value (the maximum value) of the thickness of the ceramic layer 1 (1b) in the laminated portion 12; (e) the usual laminated portion The CV value (the maximum value) of the thickness of the internal electrode layer 2 (2b) in 12; (f) the CV value of the distance between the midpoints of one of the ceramic layers 1 (1b) adjacent to each other in the laminated portion 12 ( (max) (g) the rate of occurrence of cracks in the thermal shock test; (h) the value of the electrostatic capacitance.

表1之條件1下之積層陶瓷電容器係經由在40℃/秒之升溫速度下焙燒之步驟而製作之積層陶瓷電容器。 The multilayer ceramic capacitor under the condition 1 of Table 1 was a multilayer ceramic capacitor produced by the step of firing at a temperature increase rate of 40 ° C / sec.

並且,如表1所示,熱衝擊緩和部11之陶瓷層1(1a)的厚度之CV值(最大值)為15%,內部電極層之厚度之CV值(最大值)為45%;對相互鄰接之一組陶瓷層1(1a)觀察時之中點間距離之CV值(最大值)成為46%。 Further, as shown in Table 1, the CV value (maximum value) of the thickness of the ceramic layer 1 (1a) of the thermal shock absorbing portion 11 is 15%, and the CV value (maximum value) of the thickness of the internal electrode layer is 45%; The CV value (maximum value) of the inter-point distance when one ceramic layer 1 (1a) adjacent to each other was observed was 46%.

又,通常積層部12中,陶瓷層1(1b)之厚度之CV值(最大值)為15%;內部電極層2(2b)之厚度之CV值(最大值)為20%;對相互鄰接之一組陶瓷層1(1b)觀察時之中點間距離之CV值(最大值)成為20%。 Further, in the laminated portion 12, the CV value (maximum value) of the thickness of the ceramic layer 1 (1b) is 15%; the CV value (maximum value) of the thickness of the internal electrode layer 2 (2b) is 20%; The CV value (maximum value) of the inter-point distance when one ceramic layer 1 (1b) was observed was 20%.

即,該條件1下之積層陶瓷電容器中,根據圖6及圖2~5可知,包括鄰接於外層部20之區域之外層部附近區域係構成熱衝擊緩和部11,該熱衝擊緩和部11包括彎曲之陶瓷層1(1a)、及厚度根據沿外層部20之主面之方向上之位置而平滑地變化的內部電極層2(2a);且較熱衝擊緩和部11更靠內側之區域係構成通常積層部12,該通常積層部12包括根據沿外層部20之主面之方向上之位置而產生的厚度之變化程度小於熱衝擊緩和部11之內部電極層2(2a)的內部電極層2(2b)。又,內部電極層2(2a、2b)未間斷,具有高連續性。 In other words, in the multilayer ceramic capacitor of the first aspect, as shown in FIG. 6 and FIGS. 2 to 5, the vicinity of the layer portion including the region adjacent to the outer layer portion 20 constitutes the thermal shock absorbing portion 11, and the thermal shock absorbing portion 11 includes The curved ceramic layer 1 (1a) and the inner electrode layer 2 (2a) whose thickness is smoothly changed according to the position in the direction of the main surface of the outer layer portion 20; and the region closer to the inner side than the thermal shock absorbing portion 11 The normal laminated portion 12 is configured to include an internal electrode layer having a thickness which is smaller than a position along the main surface of the outer layer portion 20 by a thickness smaller than that of the internal electrode layer 2 (2a) of the thermal shock absorbing portion 11. 2 (2b). Further, the internal electrode layers 2 (2a, 2b) are uninterrupted and have high continuity.

其結果,於該條件1下之積層陶瓷電容器之情形時,可確認如表1所示耐熱衝擊優良且熱衝擊試驗中亦不產生裂痕且獲得較大之靜電電容。 As a result, in the case of the multilayer ceramic capacitor under the condition 1, it was confirmed that the thermal shock resistance was excellent as shown in Table 1, and no crack occurred in the thermal shock test, and a large electrostatic capacitance was obtained.

再者,於條件1下之積層陶瓷電容器之情形時,根據圖6之金屬顯微鏡照片及圖2~5可知,衝擊緩和部11中之陶瓷層1(1a)之彎曲之狀態及內部電極層2(2a)之厚度之變化之狀態不規則(無規),認為實現了更高之耐熱衝擊性。 Further, in the case of the multilayer ceramic capacitor under Condition 1, the state of the bending of the ceramic layer 1 (1a) in the impact relaxing portion 11 and the internal electrode layer 2 can be seen from the metal micrograph of FIG. 6 and FIGS. 2 to 5. The state of the change in the thickness of (2a) is irregular (random), and it is considered that a higher thermal shock resistance is achieved.

又,於焙燒步驟中之平均升溫速度設為100℃/秒之條件2及平均升溫速度設為270℃/秒之條件3下之積層陶瓷電容器之情形時,如表1 所示,熱衝擊緩和部及通常積層部中之陶瓷層及內部電極層滿足本發明之必要條件,與條件1下之積層陶瓷電容器之情形相同,可確認耐熱衝擊優良、且於熱衝擊試驗中亦不產生裂痕且獲得較大之靜電電容。 Further, in the case of the multilayer ceramic capacitor under the condition 2 in which the average temperature increase rate in the baking step is 100 ° C / sec and the average temperature increase rate is 270 ° C / sec, as shown in Table 1, It is to be noted that the ceramic layer and the internal electrode layer in the thermal shock absorbing portion and the usual laminated portion satisfy the requirements of the present invention, and it is confirmed that the thermal shock resistance is excellent and is in the thermal shock test as in the case of the laminated ceramic capacitor under Condition 1. There is also no crack and a large electrostatic capacitance.

另一方面,於焙燒步驟中之平均升溫速度設為5℃/秒之條件4及平均升溫速度設為0.17℃/秒之條件5下之積層陶瓷電容器之情形時,如表1所示,熱衝擊緩和部中之陶瓷層之厚度之CV值(之最大值)、內部電極層之厚度之CV值(之最大值)、及相互鄰接之一組陶瓷層之中點間距離之CV值(之最大值)中之任一者均不滿足本發明之必要條件,可確認獲得之靜電電容小、且於熱衝擊試驗中產生裂痕。再者,條件4及5下之積層陶瓷電容器中靜電電容之所以變小,認為其原因在於內部電極層之間斷及裂痕之產生該兩方面。 On the other hand, in the case where the average temperature increase rate in the baking step is set to 5 ° C / sec 4 and the average temperature increase rate is set to 0.17 ° C / sec under the condition of the multilayer ceramic capacitor 5, as shown in Table 1, heat The CV value (the maximum value) of the thickness of the ceramic layer in the impact relaxation portion, the CV value (the maximum value) of the thickness of the internal electrode layer, and the CV value of the distance between the points of the ceramic layers adjacent to each other ( Any of the maximum values did not satisfy the requirements of the present invention, and it was confirmed that the obtained electrostatic capacitance was small and cracks were generated in the thermal shock test. Further, the reason why the electrostatic capacitance in the multilayer ceramic capacitors under the conditions 4 and 5 is small is considered to be due to the internal electrode layer discontinuity and the occurrence of cracks.

再者,圖7表示對於條件5(平均升溫速度=0.17℃/秒)下製作之積層陶瓷電容器進行樹脂固定研磨而露出之研磨端面(LT端面)的金屬顯微鏡照片。 In addition, FIG. 7 is a metal micrograph showing the polished end face (LT end face) exposed by resin fixation polishing of the multilayer ceramic capacitor produced under the condition 5 (average temperature increase rate = 0.17 ° C / sec).

根據圖7可知,於在條件1下製作之積層陶瓷電容器(圖6)之情形時形成的熱衝擊緩和部11於在條件4下製作之積層陶瓷電容器之情形時未形成,且於積層部10之內部電極層產生間斷。 As can be seen from Fig. 7, the thermal shock absorbing portion 11 formed in the case of the multilayer ceramic capacitor (Fig. 6) produced under the condition 1 is not formed in the case of the multilayer ceramic capacitor fabricated under the condition 4, and is formed in the laminated portion 10 The internal electrode layer is intermittent.

上述實施形態及實施例中,係以積層陶瓷電容器為例進行了說明,但本發明並不限定於積層陶瓷電容器,可應用於具有經積層之複數層陶瓷層及位於該陶瓷層間之內部電極層的例如積層LC複合零件或積層變阻器等各種積層陶瓷電子零件。 In the above embodiments and examples, the multilayer ceramic capacitor has been described as an example. However, the present invention is not limited to the multilayer ceramic capacitor, and can be applied to a plurality of ceramic layers having a buildup layer and an internal electrode layer between the ceramic layers. Various laminated ceramic electronic parts such as laminated LC composite parts or laminated varistor.

本發明係進而於其他方面亦不限定於上述實施形態及實施例,且關於構成陶瓷層及內部電極層之材料或積層數、內部電極或外部電極之構成材料或配設態樣等,可於發明之範圍內加以各種應用、變形。 The present invention is not limited to the above-described embodiments and examples, and the material or the number of layers constituting the ceramic layer and the internal electrode layer, the constituent materials or the arrangement of the internal electrodes or the external electrodes, and the like can be Various applications and modifications are possible within the scope of the invention.

1(1a、1b)‧‧‧陶瓷層 1 (1a, 1b) ‧ ‧ ceramic layer

2(2a、2b)‧‧‧內部電極層 2 (2a, 2b) ‧ ‧ internal electrode layer

10‧‧‧積層部 10‧‧‧Ministry Department

11‧‧‧衝擊緩和部 11‧‧‧ Impact mitigation department

12‧‧‧通常積層部 12‧‧‧ Usually the Ministry of Construction

30‧‧‧積層體 30‧‧‧Layered body

Lp1‧‧‧切線Lt1之垂線 Lp 1 ‧‧‧ perpendicular to the tangent line Lt 1

Lp2‧‧‧參照線Lr1之垂線 Lp 2 ‧‧‧ vertical line of reference line Lr 1

Lt1‧‧‧相對於陶瓷層引出之切線 Lt 1 ‧‧‧ tangent to the ceramic layer

Lt2‧‧‧與切線Lt1平行之線 Lt 2 ‧‧‧ parallel to the tangent Lt 1

P1‧‧‧陶瓷層與內部電極層之界面之適當的點 P 1 ‧‧‧ Appropriate points of the interface between the ceramic layer and the internal electrode layer

P2‧‧‧陶瓷層之相反側之面與內部電極層之界面的交點 P 2 ‧‧‧ the intersection of the opposite side of the ceramic layer and the interface of the internal electrode layer

Claims (3)

一種積層陶瓷電子零件,其特徵在於:其包括:積層部,其具有經積層之複數層陶瓷層及位於上述陶瓷層間之內部電極層;及外層部,其具有以自沿積層方向之方向夾入上述積層部之方式而配設的1層以上之陶瓷層;其中,於上述積層部之中,包括鄰接於上述外層部之區域的外層部附近區域係構成熱衝擊緩和部,該熱衝擊緩和部包括:彎曲之上述陶瓷層、及厚度根據沿上述外層部之主面之方向上之位置而平滑地變化的上述內部電極層;且較上述熱衝擊緩和部更靠內側之區域係構成通常積層部,該通常積層部包括:上述陶瓷層,其彎曲之程度小於上述熱衝擊緩和部之上述陶瓷層;及上述內部電極層,其根據沿上述外層部之主面之方向上之位置而產生的厚度之變化程度小於上述熱衝擊緩和部之上述內部電極層;且上述熱衝擊緩和部中,上述陶瓷層之厚度之CV值為15%以下,至少1層之上述內部電極層之厚度之CV值為40%以上,將對相互鄰接之一組陶瓷層觀察時、位於一陶瓷層及另一陶瓷層之厚度方向之中央的點沿上述積層部之積層方向連接而成的直線之長度、即中點間距離之CV值為40%以上。 A laminated ceramic electronic component, comprising: a laminated portion having a laminated plurality of ceramic layers and an internal electrode layer between the ceramic layers; and an outer layer portion having a self-clamping direction One or more ceramic layers disposed as described above, wherein the laminated portion includes a thermal shock absorbing portion in a vicinity of an outer layer portion adjacent to the outer layer portion, and the thermal shock absorbing portion The inner ceramic layer that is curved and has a thickness that changes smoothly according to a position along a main surface of the outer layer portion; and a region that is further inside than the thermal shock absorbing portion constitutes a normal laminated portion The normal laminated portion includes: the ceramic layer having a degree of bending smaller than the ceramic layer of the thermal shock absorbing portion; and the internal electrode layer having a thickness according to a position along a direction of a main surface of the outer layer portion The degree of change is smaller than the internal electrode layer of the thermal shock absorbing portion; and the thickness of the ceramic layer in the thermal shock absorbing portion The CV value is 15% or less, and the CV value of the thickness of the inner electrode layer of at least one layer is 40% or more, and is located in the thickness direction of one ceramic layer and the other ceramic layer when viewed from adjacent one ceramic layer. The length of the straight line connecting the points in the center of the layered portion, that is, the distance between the midpoints, is 40% or more. 如請求項1之積層陶瓷電子零件,其中上述通常積層部中,上述陶瓷層之厚度之CV值為15%以下,上述內部電極層之厚度之CV值為20%以下,將對相互鄰接之一組陶瓷層觀察時、位於一陶瓷層及另一陶 瓷層之厚度方向之中央的點沿上述積層部之積層方向連接而成的直線之長度、即中點間距離之CV值為20%以下。 The multilayer ceramic electronic component according to claim 1, wherein in the normal laminated portion, the CV value of the thickness of the ceramic layer is 15% or less, and the CV value of the thickness of the internal electrode layer is 20% or less, which is adjacent to each other. When the ceramic layer is observed, it is located in a ceramic layer and another pottery The length of the straight line connecting the points in the thickness direction of the porcelain layer in the lamination direction of the laminated portion, that is, the CV value of the distance between the midpoints is 20% or less. 如請求項1或2之積層陶瓷電子零件,其係表面安裝型之積層陶瓷電容器。 A multilayer ceramic electronic component according to claim 1 or 2, which is a surface mount type multilayer ceramic capacitor.
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