TW201405655A - Gas etching device with multiple chambers - Google Patents

Abstract

The invention provides a gas etching device with multiple chambers. An operating chamber is configured to etch objects with a processing gas and generate the residue gas. An air exhaust chamber covers the operating chamber. A protection chamber covers the air exhaust chamber. The operation chamber includes a chamber pressure. The air exhaust chamber includes an air exhaust pressure. The protection chamber includes a gas chamber. The chamber pressure is greater than the air exhaust pressure to exhaust the residue gas. The gas pressure is greater than the air exhaust pressure to prevent the residue gas from leakage. The invention can perform etching with customized chamber modules according to different chemicals used in the etching. The invention is low cost, safe and has a high etching rate.

Description

Gas phase etching device with multi-cavity

The invention relates to a vapor phase etching module, in particular to a gas phase etching device with multi-cavity.

Etching technology can be divided into "wet etching", "dry etching" and two types. Conventional regional etching is a technique in which a target material is first defined by a position and an area to be etched, and then directly contacted with a target chemical material by a liquid chemical solution for etching reaction or physical impact.

In wet etching, also known as liquid phase etching, the target material is immersed in a suitable chemical solution, or a liquid chemical solution is sprayed onto the target material, and the target is removed by a chemical reaction between the solution and the object to be etched. A film on the material to achieve the purpose of etching. However, in the wet etching process, the process steps are complicated, the liquid chemical molecules are large in volume, and the surface area of the contact target material is small, so the etching process time is long.

Dry etching is usually a kind of plasma etching and etching in plasma etching. However, the two commonly used etching techniques have to go through multiple complicated process procedures to achieve the etching effect, and the shortcomings of dry etching are correct. The low selectivity of the bottom layer, the component is subject to the risk of plasma damage and expensive equipment. Wet etching has the problem of isotropicity, which is easy to cause etching deviation, so the process steps are complicated and costly.

In view of this, the inventors have intensively explored the problems faced by existing etching processes and their equipments by years of experience in the development of related industries, and through extensive analysis and actively seeking solutions, after long-term efforts The research and development finally succeeded in creating a multi-cavity gas phase etching device to improve the above-mentioned defects.

The main object of the present invention is to provide a vapor phase etching apparatus having a multi-cavity, which is a fluorine-containing gas sublimated to a gas phase by using hydrogen fluoride, such as a nitrogen gas, a fluorine gas, a chlorine fluoride gas, and a hydrogen fluoride gas. Process gas for etching, for example, solar cell, semiconductor, planar display substrate film removal and various metal and non-metal product surface processing equipment to achieve a special module through the gas phase of different chemicals The etching operation has the effects of low cost, high etching rate and regioselectivity compared to the past etching technology, while taking into consideration the excellent safety considerations.

Another object of the present invention is to provide a vapor phase etching apparatus having a multi-cavity, which can be adjusted according to different sizes, etching areas, and material properties of different liquid or solid chemicals. Temperature, flow and flow rates are all compatible with the same design and high safety, gas phase etching equipment protected by multi-cavity structure.

To achieve the above object, the present invention provides a vapor phase etching apparatus having a multi-cavity, comprising a working cavity for etching an object by a process gas and generating residual gas, the working cavity having a first opening, and having a working cavity The cavity pressure, the degassing cavity covers the working cavity, and the degassing cavity has a second opening, the degassing cavity has a degassing pressure, and the cavity pressure is greater than the degassing pressure to discharge the residual gas, the protective cavity The degassing chamber is coated, the gas pressure is in the protective chamber, and the gas pressure is greater than the degassing pressure, thereby pressing the degassing pressure.

The purpose, technical contents, features and effects achieved by the present invention will be more readily understood by the detailed description of the embodiments and the accompanying drawings.

Embodiments of the present invention and the problems to be solved, technical means for solving the problems, and The effects of the prior art can be presented one by one in the detailed description of the reference drawings.

The invention belongs to a process equipment suitable for the regional removal of solar cell, semiconductor, flat display substrate film and the surface processing of various metal and non-metal products. The design concept of the invention is to carry out an etching operation by carrying a special module through the gas phase characteristics of different chemicals, thereby achieving the effects of low cost, high etching rate and regional selectivity, and at the same time taking into consideration the excellent safety consideration design.

The present invention is described herein with reference to FIGS. 1 and 2 to illustrate a multi-cavity three-dimensional structure diagram of the present invention and a vapor phase etching apparatus having a multi-cavity. As shown in the drawing, the present invention this disclosed having a vapor phase etching apparatus a multiple cavity of 10, which comprises a working chamber 12 to take advantage of the process gas _{G. 1} is etched article 14, the process gas _{G. 1} residual gas G after 14 during the etching object _2, the working chamber The body 12 has a first opening 16, and the working cavity 12 has a cavity pressure P ₁ , the degassing cavity 18 encloses the working cavity 12 , and the degassing cavity 18 has a second opening 20 , and the degassing cavity 18 There is a degassing pressure P ₂ , and the chamber pressure P _{1 is} greater than the degassing pressure P ₂ , so the working chamber 12 can pass through the first opening 16 by the chamber pressure P ₁ to discharge the residual gas G ₂ to the degassing chamber. Body 18.

As described above, the present invention adds a protective cavity 22 to cover the degassing chamber 18, the protective cavity 22 has a gas pressure P ₃ , and the gas pressure P _{3 is} greater than the degassing pressure P ₂ , whereby the present invention can be directed to The second opening 20 presses the degassing pressure P ₂ so that the residual gas G ₂ does not leak to the protective cavity 22, thereby preventing the residual gas G _{2 from} leaking into the atmosphere. The object 14 can be a solar cell, a semiconductor, a flat display substrate, various metal and non-metal products. Further, when the process gas G ₁ is extremely dangerous to use, also in the original body 22 of the protective chamber is provided together with the protective chamber 22 is also designed to cover the original shield cavity 22, and therefore among the routing process more The safety of the use can be ensured, and the design is the same as the design of the protective cavity 22 to cover the degassing cavity 18, and therefore will not be described again.

As described above, the gas pressure P _{3 of the} present invention is greater than the degassing pressure P ₂ , which is an engineer freely set parameter. However, the present invention is not limited to the gas pressure P ₃ , and the present invention has a multi-chamber gas. When the phase etching apparatus 10 performs etching of an object 14, the gas pressure P _{3 can be} set to be greater than or equal to the chamber pressure P ₁ according to the actual process condition. When the gas pressure P _{3 is} set to be greater than the chamber pressure P ₁ , In addition to the application of the gas pressure P ₃ to the degassing chamber 18, the residual gas G ₂ in the degassing chamber 18 is also pressed by the gas pressure P ₃ and can only be moved in the degassing chamber 18, thereby maintaining the residual gas G _{2 is} not leaked into the atmosphere, and when the gas pressure P _{3 is} set equal to the chamber pressure P ₁ , the extrusion chamber pressure P is not indirectly generated during the process of pressing the degassing pressure P ₂ due to the gas pressure P ₃ . ₁ impede the process gas G _{1 is} moved to the object 14.

Referring to FIG. 2, a multi-cavity vapor phase etching apparatus 10 of the present invention, wherein the working chamber 12, the degassing chamber 18 and the protective chamber 22 each have a port 24, and the ports 24 utilize gas tubes. path 26 respectively connected gas transmission 28, the scrubber 30, and compressed dry air means 32, and the cavity pressure P ₁ on line 28 by gas transport means, in addition to the gas pressure P ₂ are provided by the scrubber 30, the gas pressure P ₃ is provided by a compressed dry air unit 32.

As shown in FIG. 2, the multi-cavity vapor phase etching apparatus 10 of the present invention, wherein the working chamber 12 and the gas transfer device 28, between the degassing chamber 18 and the scrubber 30, and the protective chamber 22 and 32 between the compressed air drying apparatus having a respective one-way valve 34 so as to correspond respectively to control the process gas and the residual gas _{flow. 1} G ₂ G, the one-way valve 34 through the control of the process gas can be _{avoided. 1} and residual gas G G ₂ produces reflux.

As described above, the multi-cavity vapor phase etching apparatus 10 of the present invention may be provided with a gas recovery device 36, which is connected to the gas transmission device 28 and the scrubbing device 30 to receive the residual gas G ₂ for recovery. After the residual gas G ₂ , an etching gas may be generated to the gas transport device 28 , and the gas transport device 28 transmits the etching gas in combination with the process gas G ₁ to the working chamber 12 to etch the object 14 .

In the foregoing, the multi-cavity vapor phase etching apparatus 10 of the present invention includes a gas anti-leather element 38 for sealing the second opening 20, wherein the material of the gas anti-leakage element 38 is a corrosion-resistant soft material, and the gas is prevented. The venting element 38 is an O-ring seal or forced, wherein the process gas G ₁ is a fluorine-containing gas, such as a fluorinated nitrogen gas, a fluorine gas, a fluorinated chlorine gas, and a hydrogen fluoride gas. And the gas pressure P ₃ is generated when the compression drying air device 32 heats the protection chamber 22, or an inert gas can be injected from the compressed dry air device 32 to generate a gas pressure P ₃ , such as helium or neon. Gas, argon, helium, neon or helium, the use of inert gas can further ensure that the process gas G ₁ does not react with the outside air, and can ensure the safety of the process gas.

In summary, according to the gas phase etching apparatus 10 having a multi-cavity according to the present invention, the etching object 14 is etched, and the characteristics of the fluorine-containing gas volatilization are utilized, and the working chamber 12, the degassing chamber 18, and the protective chamber 22 are maintained. Between the gas line 26 and the state of the temperature greater than 20.01 ° C, the position defined by the object 14 can be completely removed. Moreover, the present invention can further match the gas phase characteristics of different liquid or solid chemicals according to different sizes, etching areas, material properties of the objects, and adjust the temperature, flow rate and flow rate to etch the object 14 while supplementing The multi-cavity vapor phase etching apparatus 10 of the present invention further maintains high safety in use.

The foregoing embodiments of the present invention are disclosed above, but are not intended to limit the invention. Modifications and modifications made without departing from the spirit and scope of the invention are claimed in the scope of the invention. Please refer to the attached request for the scope of patents defined by the present invention.

10‧‧‧Vapor-etching equipment with multi-cavity

12‧‧‧Working chamber

14‧‧‧ objects

16‧‧‧First opening

18‧‧‧Degassing chamber

20‧‧‧second opening

22‧‧‧ protective cavity

24‧‧‧ mouth

26‧‧‧ gas pipeline

28‧‧‧ gas transmission device

30‧‧‧ scrubber

32‧‧‧Compressed dry air unit

34‧‧‧ check valve

36‧‧‧Gas recovery unit

38‧‧‧ gas venting components

G ₁ ‧‧‧Process Gas

G ₂ ‧‧‧ residual gas

P ₁ ‧‧‧cavity pressure

P ₂ ‧‧‧ degassing pressure

P ₃ ‧‧‧ gas pressure

Figure 1 is a multi-cavity three-dimensional structure diagram of the present invention.

Figure 2 is a schematic view of a gas phase etching apparatus having a multi-cavity according to the present invention.

10‧‧‧Vapor-etching equipment with multi-cavity

12‧‧‧Working chamber

14‧‧‧ objects

16‧‧‧First opening

18‧‧‧Degassing chamber

20‧‧‧second opening

22‧‧‧ protective cavity

24‧‧‧ mouth

26‧‧‧ gas pipeline

28‧‧‧ gas transmission device

30‧‧‧ scrubber

32‧‧‧Compressed dry air unit

34‧‧‧ check valve

36‧‧‧Gas recovery unit

38‧‧‧ gas venting components

G ₁ ‧‧‧Process Gas

G ₂ ‧‧‧ residual gas

P ₁ ‧‧‧cavity pressure

P ₂ ‧‧‧ degassing pressure

P ₃ ‧‧‧ gas pressure

Claims (11)

A multi-cavity vapor phase etching apparatus includes at least: a working cavity, a process gas is used to etch an object, and a residual gas is generated, the working cavity has a first opening, and the working cavity has a cavity pressure; a degassing cavity covering the working cavity, and the degassing cavity has a second opening, the degassing cavity has a degassing pressure, and the cavity pressure is greater than the degassing pressure a force to discharge the residual gas; and a protective cavity covering the degassing chamber, the protective chamber having a gas pressure, and the gas pressure being greater than the degassing pressure, thereby pressing the degassing pressure. The multi-cavity vapor phase etching apparatus of claim 1, wherein the gas pressure is greater than or equal to the chamber pressure, and the gas pressure can be applied to the degassing chamber. The multi-cavity vapor phase etching apparatus of claim 2, wherein the working cavity, the degassing cavity and the shielding cavity each have a port, and the ports are respectively connected by a gas pipeline a gas transmission device, a gas scrubbing device and a compressed dry air device, wherein the pressure of the chamber is provided by the gas transfer device, the degassing pressure is provided by the scrubbing device, and the gas pressure is derived from the compressed dry air The device is provided. The multi-cavity vapor phase etching apparatus according to claim 3, wherein the temperature of the working chamber, the degassing chamber, the shielding chamber and the gas line is greater than 20.01 °C. A multi-cavity vapor phase etching apparatus according to claim 3, wherein the working chamber and the gas transfer device, between the degassing chamber and the scrubber, and the protective chamber and the compression The dry air devices each have a one-way valve to respectively control the flow of the process gas and the residual gas. The multi-cavity vapor phase etching apparatus according to claim 3, further comprising a gas recovery device connected to the gas scrubbing device and the gas transport device to receive the residual gas to generate an etching gas to the gas transport device The gas transfer device can transfer the etching gas to the working chamber together with the process gas. The gas phase etching apparatus having a multi-cavity according to claim 1, further comprising: a gas leakage preventing member to seal the second opening. A multi-cavity vapor phase etching apparatus according to claim 7, wherein the gas anti-leakage element is O-ring sealed or pressed. The multi-cavity vapor phase etching apparatus according to claim 7, wherein the material of the gas anti-leakage element is a corrosion-resistant soft material. The multi-cavity vapor phase etching apparatus according to claim 2, wherein the process gas system is a fluorine-containing gas, and the fluorine-containing gas may be a nitrogen fluoride gas, a fluorine gas, a fluorine fluoride gas, and a hydrogen fluoride gas. And the gas pressure is generated by the compressed dry air device by using an inert gas, which may be helium, neon, argon, helium, neon or xenon. A multi-cavity vapor phase etching apparatus according to claim 1, wherein the object is a solar cell, a semiconductor or a flat display substrate.