KR20230144642A - Semiconductor heat treatment device - Google Patents

Abstract

A semiconductor heat treatment device according to an embodiment of the present invention is provided with a process chamber for accommodating a wafer support assembly in the process chamber. An opening is provided at the bottom to allow the wafer support assembly to enter and exit, and an exhaust port is provided at the top. An intake port is installed at the bottom of the side wall of the process chamber. The wafer support assembly is liftable and seals the opening after the wafer support assembly rises and enters the process chamber. The heating cylinder is installed to cover the process chamber and is used to heat the process chamber. The intake pipe communicates with the intake port and is used to transport gas to the process space. The exhaust pipe passes through the heating cylinder and communicates with the exhaust port, and is used to discharge gas from the process space. The gas-liquid separation device is in communication with the exhaust pipe and is used to liquefy and collect process by-products among the gas discharged from the process space and discharge the remaining gas. The semiconductor heat treatment device according to an embodiment of the present invention can control wafer particles and oxygen content and improve temperature control precision and temperature uniformity.

Description

Semiconductor heat treatment device

The present invention relates to the field of semiconductor manufacturing, and more specifically to semiconductor heat treatment devices.

As chip front end of line (FEOL) processes continue to shrink, advanced packaging devices are being developed with continually smaller dimensions. This is placing higher demands on advanced packaging devices in terms of smaller linewidth processing, particle control, and process precision control. For the curing process, an oven is currently used to heat the packaging adhesive. However, conventional oven temperature control, oxygen content control, particle control, etc. can no longer meet the demands of advanced packaging processes.

Referring to FIGS. 1 to 3 together, a conventional oven includes a box 1. Inside the box 1, an upper cavity, a storage cavity 11, and a lower cavity are installed sequentially from top to bottom. Here, both the upper cavity and the lower cavity are connected to the storage cavity 11 through a plurality of first pores 111. Four carriers 13 for transporting the riser 12 and semiconductor elements are installed in the storage cavity 11. Both ends of the riser 12 communicate with the upper cavity and the lower cavity, respectively, and a plurality of second pores 121 are installed in the riser 12 to communicate the interior of the riser 12 with the storage cavity 11. It is used to As shown in FIG. 2, a mounting groove 17 is installed on one side of the box 1 to accommodate the mounting frame 18, the blower 10, and the gas channel structure 16. Here, the output port of the blower 10 communicates with the gas channel structure 16 through the exhaust pipe 15. The gas channel structure 16 communicates with the upper cavity and the lower cavity. The input port of the blower 10 is connected to the mounting frame 18. As shown in FIG. 3, several heat pipes 19 are mounted inside the mounting frame 18. When performing a heat treatment process, the hot air generated by heating the heat pipe 19 sequentially flows into the upper cavity and the lower cavity through the blower 10, the exhaust pipe 15, and the gas channel structure 16. Thereafter, it flows into the storage cavity 11 through the plurality of first pores 111, the riser 12, and the second pores 121 thereon, respectively. Therefore, baking of the semiconductor devices on each carrier 13 is implemented.

The oven inevitably presents the following problems in actual application.

First, the process area inside the storage cavity 11 is not closed. Therefore, the process area is affected by the environment and surrounding devices, so the cleanliness requirements of the process cannot be met, and particle control for semiconductor devices cannot be performed. Additionally, the oxygen content in the process area cannot be controlled. When performing a curing process, if the oxygen content in the process area is too high, it may cause oxidation of the packaging adhesive and affect chip performance.

Second, the heat loss generated by the heat pipe 19 is relatively large. In addition, the influence of the external environment is relatively large, so heating efficiency is relatively low and temperature control precision is somewhat poor. Additionally, the heat pipe 19 is located on one side of the storage cavity 11. Therefore, curing may be incomplete due to poor temperature uniformity within the storage cavity 11. In serious cases, problems such as bubbles occurring in the packaging adhesive and the wafer becoming distorted and uneven may occur.

The present invention provides a semiconductor heat treatment device to solve at least one of the technical problems existing in the prior art. This can not only implement particle and oxygen content control of the wafer, but also improve temperature control precision and temperature uniformity, ensuring chip performance.

In order to achieve the object of the present invention, a semiconductor heat treatment device is provided. This includes the process chamber, heating cylinder, wafer support assembly, intake duct, exhaust duct, and gas-liquid separation device.

A process space for accommodating the wafer support assembly is installed in the process chamber. An opening is provided at the bottom to allow the wafer support assembly to enter and exit, and an exhaust port is provided at the top. An intake port is installed at the bottom of the side wall of the process chamber.

The wafer support assembly is capable of being raised and lowered. The wafer support assembly rises to enter the process chamber and then seals the opening.

The heating cylinder is installed to cover the process chamber and is used to heat the process chamber.

The intake pipe communicates with the intake port and is used to transport gas to the process space.

The exhaust pipe passes through the heating cylinder, communicates with the exhaust port, and is used to discharge gas from the process space.

The gas-liquid separation device communicates with the exhaust pipe. It is used to liquefy and collect process by-products of the gas discharged from the process space and discharge the remaining gas.

Optionally, the heating cylinder includes a thermal housing and a plurality of heating units. The thermal housing is installed to cover the process chamber. The plurality of heating units are installed in the thermal housing on an inner wall opposite the process chamber, and are each used to heat a plurality of different areas of the process space.

The heat treatment device further includes a temperature detector and control unit.

The temperature detector is used to detect in real time the actual temperature values of the plurality of areas corresponding to the plurality of heating units in the process space and transmit them to the control unit.

The control unit is used to match the temperatures of the plurality of zones by adjusting the output power of the corresponding heating unit based on the difference between the actual temperature values of the plurality of zones.

Optionally, the temperature detector includes a detection tube and a plurality of thermocouples installed in the detection tube.

The detection tube is installed vertically in the process space. The upper end of the detection tube is close to the top of the process chamber, and the lower end of the detection tube extends outside the process chamber through the bottom of the side wall of the process chamber.

The positions of the plurality of thermocouples correspond one-to-one with the plurality of areas.

Optionally, the thermal housing includes a cylindrical side wall, a cap and a thermal sleeve.

The cylindrical side wall is installed to cover the process chamber.

The cap is installed at the top of the cylindrical side wall and is used to seal the opening at the top of the cylindrical side wall. A via is installed in the cap to allow the exhaust pipe to pass through.

The thermal sleeve is installed between the cylindrical side wall and the process chamber and is close to the bottom of the cylindrical side wall. It is used to seal the annular gap between the cylindrical side wall and the process chamber.

Optionally, the exhaust port of the process chamber is fitted with a spherical connection joint.

A spherical flange is installed at the intake end of the exhaust pipe. The spherical flange is fit-connected to the spherical connection joint. The exhaust end of the exhaust pipe communicates with the gas-liquid separation device.

Optionally, a sealing structure is further installed in the via of the cap. The sealing structure includes a first annular sealing member, a second annular sealing member, and a fixing assembly. The via is a stepped hole. The first annular sealing member is located in the step hole and is installed to cover the spherical flange. The outer diameter of the first annular sealing member is smaller than the hole diameter located below the step surface of the step hole. The second annular sealing member is installed to cover the intake end of the exhaust pipe and is located on the step surface of the step hole. The outer diameter of the second annular sealing member is smaller than the hole diameter located above the step surface of the step hole.

The fixing assembly is fixedly connected to the cap and presses the second annular sealing member and the first annular sealing member downward to compress and deform them.

Optionally, a plurality of exhaust heating members are sequentially installed in the exhaust pipe along the gas discharge direction. This is used to effect heating in different areas in the gas discharge direction, respectively, for the exhaust pipe.

Optionally, the exhaust pipe includes a first transition pipe and a second transition pipe sequentially connected along the gas discharge direction. Here, the first transfer pipe includes a first vertical section, an inclined section, and a second vertical section sequentially connected along the gas discharge direction. The intake end of the inclined section is higher than the exhaust end of the inclined section.

The second transition pipe is installed vertically.

Optionally, a plurality of intake ports are installed at the bottom of the side wall of the process chamber along a circumferential direction.

The intake pipe is installed to surround the process chamber. At least one intake end and a plurality of exhaust ends are installed in the intake pipe. The plurality of exhaust ends of the intake pipe communicate with the plurality of intake ports in one-to-one correspondence.

The intake pipe is covered with a preheating structure for preheating the gas in the intake pipe.

Optionally, the process chamber includes a process tube and a manifold. Here, the bottom of the process pipe is opened, and the exhaust port is installed at the top. The top of the manifold is open and the bottom of the manifold is open to form the opening. The top end of the manifold is sealed and connected to the bottom end of the process pipe. The bottom end of the manifold is sealingly connected to the wafer support assembly after the wafer support assembly rises and enters the process chamber, thereby sealing the opening of the manifold bottom. Additionally, the intake port is installed on the side wall of the manifold.

Optionally, the wafer support assembly includes a stacked wafer bracket, an insulating structure, and a process door. After the wafer support assembly rises and enters the process chamber, the wafer bracket and the insulation structure are positioned in the process space. The process door is sealingly connected to the bottom of the process chamber and seals the opening of the bottom of the process chamber.

The insulating structure is used to keep the space located above it warm.

Optionally, the insulation structure includes an insulation bracket and a plurality of insulation plates installed on the insulation bracket. The plurality of insulating plates are arranged to be spaced apart in the vertical direction.

The beneficial effects of the present invention are as follows.

The semiconductor heat treatment device according to an embodiment of the present invention can ensure sealability of the process space by sealing the opening at the bottom of the process chamber after the wafer support assembly rises and enters the process chamber. Therefore, requirements in terms of process cleanliness can be met and particle control for semiconductor devices can be performed. In addition, an intake pipe and an exhaust pipe are used to communicate with the intake port located at the bottom of the side wall of the process chamber and the exhaust port located at the top of the process chamber, respectively, to realize intake and exhaust. Therefore, the oxygen content in the process space can be controlled. Additionally, by heating the process chamber through a heating cylinder installed to cover the process chamber, temperature uniformity around the process space can be effectively improved. At the same time, the heating cylinder is less affected by the external environment, improving heating efficiency and temperature control precision. A semiconductor heat treatment device according to an embodiment of the present invention uses the wafer support assembly, an intake pipe, an exhaust pipe, and a heating cylinder in combination. This not only enables control of wafer particles and oxygen content, but also improves temperature control precision and temperature uniformity to ensure chip performance. In particular, it can meet the comprehensive demands for temperature control, oxygen content control, and particle control in advanced packaging processes.

1 is a diagram showing the internal structure of a conventional oven.
Figure 2 is an internal structural diagram of a mounting groove of a conventional oven.
Figure 3 is a structural diagram of a mounting frame of a conventional oven.
Figure 4 is a cross-sectional view of a semiconductor heat treatment device according to an embodiment of the present invention.
Figure 5 is a cross-sectional view of a process chamber according to an embodiment of the present invention.
Figure 6 is a cross-sectional view of a thermal housing according to an embodiment of the present invention.
Figure 7 is a partial cross-sectional view of a process chamber at its exhaust port according to an embodiment of the present invention.
Figure 8 is a cross-sectional view of an exhaust pipe according to an embodiment of the present invention.
Figure 9 is a plan cross-sectional view of a process chamber at its intake port according to an embodiment of the present invention.
Figure 10 is a cross-sectional view of an intake pipe mounted on a chamber module according to an embodiment of the present invention.
Figure 11 is a side cross-sectional view of a gas-liquid separation device according to an embodiment of the present invention.

In order for those skilled in the art to which the present invention pertains to better understand the technical solution of the present invention, the semiconductor heat treatment device provided in the embodiment of the present invention will be described in detail below with reference to the accompanying drawings.

Referring to Figure 4, an embodiment of the present invention provides a semiconductor heat treatment device. The device can be applied, for example, in the manufacturing process of advanced packaging devices to carry out processing for packaging adhesives. Specifically, the semiconductor heat treatment device includes a process chamber 2, a heating cylinder 3, a wafer support assembly, an intake pipe, an exhaust pipe, and a gas-liquid separation device 5.

Here, the process chamber 2 is provided with a process space for accommodating the wafer support assembly. An opening is provided at the bottom of the process chamber 2 to allow the wafer support assembly to enter and exit. An exhaust port is installed at the top of the process chamber 2, and an intake port is installed at the bottom of the side wall of the process chamber 2. The wafer support assembly is capable of being raised and lowered. The wafer support assembly is lifted and lowered through an opening in the bottom of the process chamber 2, enters the process chamber 2, and then seals the opening. The structure of the wafer support assembly may vary. For example, the wafer support assembly includes a wafer bracket 24 and a process door 23. Here, a plurality of wafer bosses are installed on the wafer bracket 24 and are used to support a plurality of wafers 27. The plurality of wafers 27 are arranged to be spaced apart along the vertical direction. When the wafer bracket 24 is located in the process space, the process door 23 is sealingly connected to the bottom of the process chamber 2 and seals the opening of the bottom of the process chamber 2. In this way, the wafer is moved into or out of the process chamber 2 through the opening in the bottom of the process chamber 2 using the wafer support assembly. Through this, the wafer of the wafer bracket 24 can be moved into or out of the process space, thereby implementing wafer loading and unloading operations.

As also shown in FIG. 5, the wafer support assembly further includes an insulating structure 242. The insulating structure 242 is located between the wafer bracket 24 and the process door 23 and is used to transport the wafer bracket 24. In addition, it is connected to the process door 23, and when both the wafer bracket 24 and the insulation structure 242 are located in the process space, the process door 23 and the bottom end of the process chamber 2 are sealed and connected. , sealing the opening at the bottom of the process chamber 2. The insulating structure 242 is used to keep the space located above it warm. Therefore, heat loss at the bottom of the process space can be further reduced, helping to improve temperature uniformity in the process space.

The insulation structure 242 may have various structures. For example, as shown in FIG. 5, the insulation structure 242 includes an insulation bracket 242a and a plurality of insulation plates 242b installed on the insulation bracket 242a. The plurality of insulation plates 242b are arranged to be spaced apart in the vertical direction. Additionally, the insulation bracket 242a is connected to the process door 23 and supports a plurality of wafer brackets 24.

In this embodiment, the intake pipe communicates with the intake port and is used to transport gas within the process space. For example, during the curing process, a protective gas (e.g. nitrogen) is delivered to the process space. The exhaust pipe 4 passes through the heating cylinder 3 and communicates with the exhaust port, and is used to discharge gas (e.g., shielding gas containing process by-products) of the process space. The gas-liquid separation device (5) communicates with the exhaust pipe (4). It is used to liquefy and collect process by-products of the gas discharged from the process space and discharge the remaining gas. Through the gas-liquid separation device 5, process by-products can be separated from the discharged gas, thereby ensuring the cleanliness of the discharged gas.

The structure of the process chamber 2 may vary. For example, in this embodiment, as shown in FIG. 5, the process chamber 2 includes a process tube 21 and a manifold 22. Here, the bottom of the process pipe 21 is opened, and the exhaust port 21a is installed at the top. The top of the manifold 22 is open, and the bottom of the manifold 22 is open to form an opening for moving the wafer support assembly in or out. The top end of the manifold 22 is sealed and connected to the bottom end of the process pipe 21, and the sealing connection method is, for example, as follows. That is, flanges docked with each other are installed at the bottom end of the process pipe 21 and the top end of the manifold 22, respectively. A sealing ring 29 is installed between these two flanges and is used to seal the gap between them. The bottom end of the manifold 22 is sealed and connected to the wafer support assembly (eg, the process door 23) after the wafer support assembly rises and enters the process chamber 2. The manner of sealing connection is for example: That is, a sealing ring 28 is installed at the manifold 22 and the bottom end, and is used to seal the gap between the manifold 22 and the process door 23. Additionally, the intake port is installed on the side wall of the manifold 22.

The wafer support assembly is lifted and entered into the process chamber and then seals the opening at the bottom of the process chamber, thereby ensuring the sealability of the process space. Therefore, process cleanliness requirements can be met and particle control for semiconductor devices can be implemented. In addition, the intake pipe and the exhaust pipe communicate with the intake port located at the bottom of the side wall of the process chamber and the exhaust port located at the top of the process chamber, respectively, to realize intake and exhaust. Therefore, the oxygen content in the process space can be controlled. In detail, since the process space is sealed, the gas flow rate of the intake pipe flowing into the process space is controlled, and the gas flow rate of the exhaust pipe 4 discharged into the process space is controlled, thereby reducing the atmospheric pressure in the process space to a positive pressure. You can control it. Under this pressure environment, oxygen from the external environment cannot enter the process space, and gas (for example, nitrogen gas) may be injected into the process space using an intake pipe before the process begins. Additionally, the oxygen content in the process space can be controlled by opening the exhaust pipe 4 to replace oxygen in the process space.

Optionally, the semiconductor heat treatment device according to an embodiment of the present invention may further include an oxygen analyzer 26. It is used to detect the oxygen content in the process space and confirm whether the oxygen content in the process space meets the process requirements after oxygen substitution is completed.

A semiconductor heat treatment device according to an embodiment of the present invention can control particles of a semiconductor device based on controlling the oxygen content in the process space. This can reduce particles produced due to oxidation in low-oxygen environments. Additionally, the exhaust pipe 4 may discharge by-products generated during the process in the process space. As can be seen here, by using the wafer support assembly and the intake pipe and exhaust pipe in combination, it is possible to control the particle and oxygen content of the wafer. In particular, it can meet the comprehensive demands for oxygen content control and particle control in advanced packaging processes.

As shown in Figure 4, the heating cylinder 3 is installed to cover the process chamber 2. That is, it is installed to surround the process tube 21 and is used to heat the process chamber 2. By heating the process chamber 2 through the heating cylinder 3 installed to cover the process chamber 2, temperature uniformity around the process space can be effectively improved. Additionally, the heating cylinder 3 can improve heating efficiency and temperature control precision by being less affected by the external environment.

Optionally, the heating cylinder (3) includes a thermal housing (32) and a plurality of heating units (31). Here, the thermal housing 32 is installed to cover the process chamber 2. A plurality of heating units 31 are installed on opposing inner walls of the thermal housing 32 and the process chamber 2, and are each used to heat a plurality of different areas of the process space. For example, four areas (A to D) are shown in Figure 4, and the four areas (A to D) are distributed in the vertical direction. Correspondingly, there are four heating units 31, which correspond one-to-one with the four areas A to D, and are used to independently heat the four areas A to D. In this way, temperature uniformity in the circumferential and axial directions within the process space can be effectively improved. At the same time, the thermal housing 32 reduces heat loss in the heating unit 31 and prevents it from being influenced by the external environment, thereby improving heating efficiency and temperature control precision.

Optionally, in order to implement automatic control of temperature uniformity and improve temperature control precision, the semiconductor heat treatment device further includes a temperature detector 33 and a control unit (not shown). Here, the temperature detector 33 is used to detect in real time the actual temperature values of a plurality of areas corresponding to the plurality of heating units 31 in the process space and transmit them to the control unit. Based on the difference between the actual temperature values of the plurality of zones, the control unit adjusts the output power of the corresponding heating unit 31 to match the temperatures of the multiple zones. Taking the four areas (A to D) shown in Figure 4 as an example, the control unit adopts a specified algorithm based on the actual temperature values of the four areas (A to D) detected by the temperature detector 33 to The output power of each heating unit 31 is calculated and obtained. For example, for areas A and D, which are closer to the top and bottom of the process space, their output power should be greater than areas B and C, as they are more sensitive to environmental influences and generate more heat losses. In this way, the temperature difference between areas A and D and areas B and C can be controlled within the allowable temperature difference range.

The structure of the temperature detector 33 may vary. For example, as shown in FIG. 4, the temperature detector 33 includes a detection tube 331 and a plurality of thermocouples 332 installed in the detection tube 331. Here, the detection tube 331 is installed vertically in the process space. The top of the detection tube 331 is close to the top of the process space, and the bottom of the detection tube 331 penetrates the bottom of the side wall of the process chamber 2 (e.g., the manifold 22), and the process chamber ( It extends outside of 2). The positions of the plurality of thermocouples 332 correspond one-to-one to the plurality of areas, and the connection lines of the plurality of thermocouples 332 are all drawn out from the bottom of the detection tube.

The thermal housing 32 may have various structures. For example, as shown in FIG. 6 , the thermal housing 32 includes a cylindrical side wall 321, a cap 322, and a thermal sleeve 323. Here, a cylindrical side wall 321 is installed to cover the process chamber 2. For example, each heating unit 31 includes a heating wire. The heating wire is built into the inner wall of the cylindrical side wall 321 and wraps around the axial direction of the cylindrical side wall 321. Note that the heating wires of the different heating units 31 are independent of each other so that the magnitude of their currents or voltages can be controlled independently. Of course, in actual application, the heating unit 31 may also adopt any other heating element capable of generating heat. Additionally, the heating unit 31 is not limited to being built into the inner wall of the cylindrical side wall 321. This is as long as the cylindrical side wall 321 can perform the function of insulating heat for the heating unit 31.

The cap 322 is installed at the top of the cylindrical side wall 321 and is used to block the opening at the top of the cylindrical side wall 321. Additionally, a via 322a is installed in the cap 322 to allow the exhaust pipe 4 to pass through. In this way, it can be ensured that the exhaust pipe 4 can be connected to the exhaust port 21a of the process chamber 2. It is also possible to prevent a large amount of heat generated by the heating unit 31 from being lost from the top opening under conduction of the environmental airflow, thereby ensuring the temperature control effect.

The thermal sleeve 323 is installed between the cylindrical side wall 321 and the process chamber (i.e., manifold 22) and is close to the bottom of the cylindrical side wall 321. This is used to close the annular gap between the cylindrical side wall 321 and the process chamber 2. Therefore, the heat generated by the heating unit 31 can be prevented from being lost from the annular gap, thereby ensuring the temperature control effect.

The connection structure between the exhaust pipe 4 and the exhaust port 21a of the process chamber 2 may vary. For example, as shown in FIG. 7, a spherical connection joint 422 is installed at the exhaust port of the process chamber 2. A spherical flange 421 is installed at the intake end of the exhaust pipe 4. The spherical flange 421 is fit-connected to the spherical connection joint 422. For example, the inner spherical surface of the spherical flange 421 is fitted with the outer spherical surface of the spherical connection joint 422. The spherical flange 421 and the spherical connection joint 422 are fitted and connected to form the spherical flange 421. The inner spherical surface may rotate relative to the outer spherical surface of the spherical connection joint 422 about the centroid of the outer spherical surface. Therefore, the angle of the exhaust pipe 4 with respect to the process chamber 2 can be changed. In other words, the angle of the exhaust pipe 4 can be adjusted, making it easy to mount and providing flexible connection. Optionally, the connection method between the spherical flange 421 and the exhaust pipe 4 is, for example, integral molding or welding. The connection method between the spherical connection joint 422 and the process chamber 2 (i.e., the process pipe 21) is, for example, integral molding or welding. Of course, in actual application, other flexible or universal connections may be adopted between the intake end of the exhaust pipe 4 and the exhaust port of the process chamber 2. This is as long as the angle of the exhaust pipe 4 can be adjusted. Additionally, the exhaust end of the exhaust pipe (4) communicates with the gas-liquid separation device (5).

Optionally, the via 322a is sealed, based on ensuring that the intake end of the exhaust duct 4 and the exhaust port of the process chamber 2 remain connected, and the heat generated by the heating unit 31 is removed from the environment. To prevent mass loss from the top opening under conduction of air flow, a sealing structure 7 is further provided in the via 322a of the cap 322. The sealing structure 7 includes a first annular sealing member 71, a second annular sealing member 72 and a fixing assembly 73. Here, the via 322a of the cap 322 is a stepped hole. The first annular sealing member 71 is located in the step hole and is installed to cover the spherical flange 421. For example, the boss 421a can be installed on the spherical flange 421. For example, the boss 421a is located at one end of the spherical flange 421 farthest from the exhaust pipe 4 and protrudes from the outer spherical surface of the spherical flange 421. A first annular sealing member 71 is laminated on the boss 421a. The outer diameter of the first annular sealing member 71 is smaller than the hole diameter (i.e., minimum diameter) located below the step surface of the step hole to prevent the hole wall from being worn due to contact with the first annular sealing member 71. do. The second annular sealing member 72 is installed to cover the intake end of the exhaust pipe 4 and is located on the step surface of the step hole. The outer diameter of the second annular sealing member 72 is smaller than the hole diameter (i.e., maximum diameter) located above the step surface of the step hole, preventing the hole wall from being worn away due to contact with the second annular sealing member 72. . The fixing assembly 73 is fixedly connected to the cap 322 and presses the second annular sealing member 72 and the first annular sealing member 71 downward to compress and deform them. That is, the vertical gap between the fixing assembly 73 and the boss 421a is smaller than the sum of the thicknesses of the second annular sealing member 72 and the first annular sealing member 71 in their original state. Accordingly, the second annular sealing member 72 and the first annular sealing member 71 can be compressed and deformed to produce a sealing effect. Because the temperature at the top of the process chamber 2 is relatively high, in order to ensure the thermal insulation effect, optionally, both the second annular sealing member 72 and the first annular sealing member 71 are made of high temperature resistant flexible material such as fire-resistant fiber material. Made from materials.

Optionally, the compression amount of the first annular sealing member 71 is greater than the compression amount of the second annular sealing member 72. Since the compression amount of the first annular sealing member 71 is relatively large, the compression force acting on the boss 421a is relatively large. This makes the seal between the spherical flange 421 and the spherical connection joint 422 more reliable. At the same time, because the compression amount of the second annular sealing member 72 is relatively small (for example, 0 to 3 mm), the step surface of the step hole can be prevented from being damaged due to excessive pressure.

Optionally, in order for the process by-products to remain in the gaseous state and to prevent non-gaseous process by-products from clogging the exhaust duct 4, gas discharge is performed on the exhaust duct 4, as shown in FIG. A plurality of exhaust heating members 8 are sequentially installed along the direction. This is used to respectively heat different areas of the exhaust pipe 4 in the gas discharge direction. By adopting a stepwise temperature control method to heat the exhaust pipe 4, it is possible to maintain the process by-products in a gaseous state and prevent non-gaseous process by-products from clogging the exhaust pipe 4. In addition, the temperature of the gas flowing into the gas-liquid separation device 5 from the exhaust pipe 4 can be made more advantageous for rapid liquefaction, thereby improving liquefaction efficiency.

Optionally, in order to further improve the gas fluidity of the exhaust pipe 4, as shown in FIG. 8, the exhaust pipe 4 includes a first transition pipe 41a and a second transition pipe sequentially connected in the gas discharge direction. Includes the canal 41b. Here, the first transfer pipe 41a includes a first vertical section 411, an inclined section 412, and a second vertical section 413 sequentially connected in the gas discharge direction. The intake end of the inclined section 412 is higher than the exhaust end of the inclined section 412. The inclination section 412 has an inclination angle of, for example, 5° with respect to the horizontal plane. Through the inclined section 412, gas fluidity in the exhaust pipe 4 can be effectively improved. The second transfer pipe 41b is installed vertically to facilitate connection with the gas-liquid separation device 5. In addition, the first vertical section 411 and the second vertical section 413 are used to implement connection with the process chamber 2 and the second transition pipe 41b, respectively.

Optionally, the first transition tube 41a is closer to the cavity assembly 2, and is preferably a high temperature resistant tube such as a quartz tube. The second transfer pipe 41b may be a metal pipe that is relatively inexpensive.

Based on adopting the structure as shown in FIG. 8 in the exhaust pipe 4, the exhaust heating members 8 are divided into two, respectively, a first exhaust heating member 81 and a second exhaust heating member 82. )am. Here, the first exhaust heating member 81 covers the first transition pipe 41a and is used to heat the first transition pipe 41a. The second exhaust heating member 82 covers the second transition pipe 41b and is used to heat the second transition pipe 41b. For example, the heating temperature of the first exhaust heating member 81 is greater than the heating temperature of the second exhaust heating member 82. In addition, the heating temperature of the first exhaust heating member 81 is much higher than the vaporization temperature of the process by-product (for example, 350°C), and the heating temperature of the second exhaust heating member 82 is slightly higher than the vaporization temperature of the process by-product. (e.g., 250°C) In this way, even when the first transfer pipe (41a) is a horizontal pipe, it can be ensured that the process by-products therein have sufficient fluidity. In addition, the gas-liquid from the second transfer pipe (41b) Liquefaction efficiency can also be improved by making the temperature of the waste gas flowing into the separation device 5 more favorable for rapid liquefaction.

Additionally, optionally, a heat insulating member 83 is further installed at the connection point between the first transfer pipe 41a and the second transfer pipe 41b to prevent heat loss at the connection point. Additionally, a sealing member is further installed between the first transfer pipe 41a and the second transfer pipe 41b. The heat-resistant temperature of the sealing member is, for example, 300°C or lower. The heating temperature of the second exhaust heating member 82 must be lower than the heat resistance temperature to prevent the sealing member from becoming ineffective.

In this embodiment, a plurality of intake ports are provided along the circumferential direction at the bottom of the side wall of the process chamber 2 (for example, the manifold 22). Additionally, the intake pipe is installed to surround the process chamber (2). At least one intake end and a plurality of exhaust ends are installed in the intake pipe. The plurality of exhaust ends of the intake pipe communicate with the plurality of intake ports in one-to-one correspondence. For example, as shown in FIGS. 9 and 10, one intake end 911 is installed in the intake pipe 9 and is used to connect to the gas supply source. Two more exhaust stages 912 are installed in the intake pipe 9. These two each communicate with two intake ports provided at the bottom of the side wall of the process chamber 2 (e.g. manifold 22). Optionally, the intake pipe 9 is a semicircular pipe, and the intake end 911 is located at the midpoint of the intake pipe 9. Two exhaust ends 912 are located at both ends of the intake pipe 9. In this way, the gas flowing into the intake pipe 9 from the intake end 911 is divided into two branches and flows toward the two exhaust ends 912, respectively. Additionally, it flows into the process chamber 2 through two exhaust stages 912, thereby improving intake uniformity.

Additionally, the intake pipe 9 is covered with a preheating structure 92. The preheating structure 92 can be used to heat the gas in the intake pipe 9, thereby preheating the process gas before it flows into the process space. The gas temperature provided by the gas source is generally 20° C. and the flow rate is relatively large. The temperature is much lower than the temperature of the process space. Therefore, if gas flows directly into the process space, it can take a large amount of heat from the bottom of the process space and affect temperature uniformity. For this reason, by preheating the gas before it flows into the process space through the preheating structure 92, the effect of the airflow temperature difference on the temperature area at the bottom of the process space can be improved, thereby improving temperature uniformity.

The preheating structure 92 may have various structures. For example, it includes an intake heating member that covers the intake pipe 9, and a temperature detection member (not shown) for detecting the gas temperature in the intake pipe 9. According to the gas temperature in the intake pipe 9 detected by the temperature detection member, the intake air temperature can be accurately controlled to meet process demands. For example, the gas temperature in the intake pipe 9 is matched to the process temperature in the process space. Optionally, a heat insulating member is further covered around the intake heating member to reduce heat loss and improve preheating efficiency. The thermal insulation member is made of a thermal insulation material such as silica gel or refractory fiber.

As shown in FIG. 4, the gas-liquid separation device 5 includes, for example, a gas-liquid separation assembly 51, a liquid collection container 52, and a liquid pipe 53 connected to these two, respectively. It includes an on-off valve 54 installed in. Here, the gas-liquid separation assembly 51 is connected to the exhaust pipe 4. This is used to cool and liquefy process by-products among the gas discharged from the process space, separate them from the discharged gas, and then introduce them into the liquid collection container 52. Through this, liquefaction and collection of the process by-products are implemented. The separated clean gas is discharged to a gas pumping device, which may be a factory exhaust pipe or the like.

The gas-liquid separation assembly 51 has various structures. For example, as shown in FIG. 11, the gas-liquid separation assembly 51 is a condensation pipe for transporting waste gas. During the process of the condensation pipe transporting waste gas, the pipe wall of the condensation pipe may condense the waste gas. Additionally, because the condensation pipe is vertical, the condensed liquid can be separated from the waste gas under the action of its own gravity. Additionally, the inner wall of the condensation pipe has a protrusion structure (511). The protrusion structure 511 is opposite to the direction of waste gas transport in the condensation pipe and includes an inclined surface that is inclined with respect to the axis of the condensation pipe. This is used to increase the contact area between the condensation pipe and the waste gas, thereby strengthening the condensation effect of the condensation pipe. By making the inclined surface opposite to the direction of waste gas transfer in the condensation pipe, it is possible to ensure that the inclined surface is in contact with the waste gas, thereby realizing cooling of the waste gas. Additionally, by making the inclined surface inclined with respect to the axis of the condensation pipe, it is possible to prevent the airflow from being blocked and the flow of the condensed liquid to be blocked.

The protrusion structure 511 may have various structures. For example, the protrusion structure includes a plurality of sheet-like protrusions arranged in an array on the inner wall of the condensation pipe. Each sheet-like protrusion (its material plane) is inclined downward with respect to the inner wall of the condensation pipe. That is, the top surfaces of the plurality of sheet-like protrusions form the above-described inclined surface.

In summary, the semiconductor heat treatment device according to an embodiment of the present invention can ensure sealability of the process space by sealing the opening at the bottom of the process chamber after the wafer support assembly rises and enters the process chamber. Therefore, requirements in terms of process cleanliness can be met and particle control for semiconductor devices can be performed. In addition, an intake pipe and an exhaust pipe are used to communicate with the intake port located at the bottom of the side wall of the process chamber and the exhaust port located at the top of the process chamber, respectively, to realize intake and exhaust. Therefore, the oxygen content in the process space can be controlled. Additionally, by heating the process chamber through a heating cylinder installed to cover the process chamber, temperature uniformity in the circumferential direction within the process space can be effectively improved. At the same time, the heating cylinder is less affected by the external environment, improving heating efficiency and temperature control precision. A semiconductor heat treatment device according to an embodiment of the present invention uses the wafer support assembly, an intake pipe, an exhaust pipe, and a heating cylinder in combination. This not only enables control of wafer particles and oxygen content, but also improves temperature control precision and temperature uniformity to ensure chip performance. In particular, it can meet the comprehensive demands for temperature control, oxygen content control, and particle control in advanced packaging processes.

Claims (12)

In the semiconductor heat treatment device,
It includes a process chamber, a heating cylinder, a wafer support assembly, an intake pipe, an exhaust pipe, and a gas-liquid separation device,
A process space for accommodating the wafer support assembly is installed in the process chamber, an opening is installed at the bottom of the process chamber to allow the wafer support assembly to enter and exit, and an exhaust port is installed at the top of the process chamber. An intake port is installed at the bottom of the side wall of the process chamber,
the wafer support assembly is capable of being raised and lowered, the wafer support assembly being raised and used to seal the opening after entering the process chamber;
The heating cylinder is installed to cover the process chamber and is used to heat the process chamber,
The intake pipe is in communication with the intake port and is used to transport gas to the process space,
The exhaust pipe passes through the heating cylinder, communicates with the exhaust port, and is used to discharge gas from the process space,
The gas-liquid separation device is in communication with the exhaust pipe, and is used to liquefy and collect process by-products among the gas discharged from the process space and discharge the remaining gas. According to paragraph 1,
The heating cylinder includes a thermal insulation housing and a plurality of heating units, the thermal insulation housing is installed to cover the process chamber, and the plurality of heating units are installed on an inner wall of the thermal insulation housing facing the process chamber, each used to heat a plurality of different areas of the process space,
The semiconductor heat treatment device further includes a temperature detector and a control unit,
The temperature detector is used to detect in real time the actual temperature value of the plurality of areas corresponding to the plurality of heating units in the process space and transmit it to the control unit,
The semiconductor heat treatment device, wherein the control unit is used to match the temperatures of the plurality of zones by adjusting the output power of the corresponding heating unit based on the difference between the actual temperature values of the plurality of zones. . According to paragraph 2,
The temperature detector includes a detection tube and a plurality of thermocouples installed in the detection tube,
The detection tube is installed vertically in the process space, the upper end of the detection tube is close to the top of the process chamber, and the lower end of the detection tube penetrates the bottom of the side wall of the process chamber and extends to the outside of the process chamber. become,
A semiconductor heat treatment device, wherein the positions of the plurality of thermocouples correspond one-to-one with the plurality of regions. According to paragraph 2,
The thermal housing includes a cylindrical side wall, a cap and a thermal sleeve,
The cylindrical side wall is installed to cover the process chamber,
The cap is installed at the top of the cylindrical side wall and used to seal the opening at the top of the cylindrical side wall, and a via is installed in the cap to allow the exhaust pipe to pass through,
The semiconductor heat treatment device, wherein the thermal insulation sleeve is installed between the cylindrical side wall and the process chamber, is close to the bottom of the cylindrical side wall, and is used to seal the annular gap between the cylindrical side wall and the process chamber. According to paragraph 4,
A spherical connection joint is installed in the exhaust port of the process chamber,
A semiconductor heat treatment device, wherein a spherical flange is installed at the intake end of the exhaust pipe, the spherical flange is fit-connected to the spherical connection joint, and the exhaust end of the exhaust pipe communicates with the gas-liquid separation device. According to clause 5,
A sealing structure is further installed in the via of the cap, the sealing structure includes a first annular sealing member, a second annular sealing member and a fixing assembly, the via is a stepped hole, and the first annular sealing member is the Located in the step hole and installed to cover the spherical flange, the outer diameter of the first annular sealing member is smaller than the hole diameter located below the step surface of the step hole, and the second annular sealing member is located at the intake end of the exhaust pipe. It is installed to cover and is located on the step surface of the step hole, and the outer diameter of the second annular sealing member is smaller than the hole diameter located above the step surface of the step hole,
The semiconductor heat treatment device is characterized in that the fixing assembly is fixedly connected to the cap and presses the second annular sealing member and the first annular sealing member downward to compressively deform them. According to paragraph 1,
A semiconductor heat treatment device, wherein a plurality of exhaust heating members are sequentially installed in the exhaust pipe along a gas discharge direction, each used to perform heating in a different area in the gas discharge direction with respect to the exhaust pipe. In clause 7,
The exhaust pipe includes a first transition pipe and a second transition pipe sequentially connected along the gas discharge direction, and the first transition pipe includes a first vertical section, an inclined section, and a second transition pipe sequentially connected along the gas discharge direction. It includes 2 vertical sections, wherein the intake end of the inclined section is higher than the exhaust end of the inclined section,
A semiconductor heat treatment device, characterized in that the second transition pipe is installed vertically. According to any one of claims 1 to 8,
A plurality of intake ports are installed at the bottom of the side wall of the process chamber along the circumferential direction,
The intake pipe is installed to surround the process chamber, at least one intake end and a plurality of exhaust ends are installed in the intake pipe, and the plurality of exhaust ends of the intake pipe communicate with the plurality of intake ports in a one-to-one correspondence. become,
A semiconductor heat treatment device, characterized in that the intake pipe is covered with a preheating structure for preheating the gas in the intake pipe. According to any one of claims 1 to 8,
The process chamber includes a process pipe and a manifold, the bottom of the process pipe is open, the exhaust port is installed at the top, the top of the manifold is open, and the bottom of the manifold is open to form the opening. The top end of the manifold is sealed and connected to the bottom end of the process tube, and the bottom end of the manifold is sealed and connected to the wafer support assembly after the wafer support assembly rises and enters the process chamber, and the manifold is sealed. A semiconductor heat treatment device, characterized in that the opening at the bottom of the fold is sealed, and the intake port is installed on a side wall of the manifold. According to any one of claims 1 to 8,
The wafer support assembly includes a stacked wafer bracket, an insulating structure, and a process door, and after the wafer support assembly rises and enters the process chamber, the wafer bracket and the insulating structure are located in the process space, and the wafer support assembly is positioned in the process space. The door is sealingly connected to the bottom of the process chamber to seal the opening of the bottom of the process chamber,
A semiconductor heat treatment device, wherein the insulating structure is used to keep a space located above the insulating structure warm. According to clause 11,
The insulation structure includes an insulation bracket and a plurality of insulation plates installed on the insulation bracket, and the plurality of insulation plates are arranged to be spaced apart in a vertical direction.