TW201349579A - A method for manufacturing light-emitting diode - Google Patents

Abstract

A method for manufacturing a light-emitting diode (LED) comprises following steps: providing a first electrode and a second a first electrode, arranging a first retaining wall on a surface of the first electrode and a second retaining wall on a surface of the second electrode; providing a substrate, fixing the first electrode and the second electrode on the substrate to be a base, the substrate separating the first electrode and the second electrode, the first retaining wall and the second retaining wall spaced from each other; forming a encapsulant on a top surface of the base, the encapsulant defining a receiving cup therein, and an out surface of each of the first retaining wall and the second retaining wall being exposed and being not covered by the encapsulant; providing an LED chip, the LED chip connecting the first electrode and the second electrode electronically; filling a fluorescence in the receiving cup of the encapsulant to form a fluorescent layer covering the LED chip at a bottom of the receiving cup to form the LED.

Description

Method for manufacturing light emitting diode

The present invention relates to a method of fabricating a semiconductor, and in particular to a method of fabricating a light emitting diode.

As an emerging light source, light-emitting diodes have been widely used in a variety of lighting applications, and have a tendency to replace traditional light sources.

A conventional method for fabricating a light-emitting diode generally includes providing a substrate, forming two electrodes on the substrate, and then forming a light-emitting chip electrically connected thereto on the electrode, and forming a cover on the substrate and emitting light The package of the wafer forms a light emitting diode. However, in the light-emitting diode manufactured by the method, since the two electrodes are disposed at the bottom of the package and only the bottom surface thereof is exposed, when the light-emitting diode is mounted, generally, the exposed bottom surface of the electrode is attached to the electrode. On the circuit board, the installation method is single, and the installation adaptability is poor.

In view of the above, it is necessary to provide a method of manufacturing a light-emitting diode that can be mounted in multiple directions.

A method for manufacturing a light-emitting diode includes the following steps:

Providing a first electrode and a second electrode, and forming a first retaining wall and a second retaining wall on one side surface of the first electrode and the second electrode;

Providing a substrate, bonding the first electrode and the second electrode to the substrate to form a pedestal, wherein the first electrode and the second electrode are spaced apart from each other by the substrate, the first retaining wall and the second Retaining wall spacing setting;

Forming a package body having a receiving cup on the surface of the top end of the base, and exposing the first retaining wall and the second retaining wall to an outer side surface of the package body;

Providing a light emitting chip, electrically connecting the light emitting chip to the first electrode and the second electrode;

The phosphor powder is filled in the receiving cup of the package to form an encapsulating layer covering the bottom of the receiving cup of the light emitting chip, thereby forming a light emitting diode.

The light-emitting diode made by the method for manufacturing the light-emitting diode provided by the invention can realize multi-directional lateral installation, can also adapt to different installation circuits on the circuit board, and has strong installation adaptability.

FIG. 1 is a schematic diagram showing a manufacturing process of a light-emitting diode provided by the present invention, which includes:

a first electrode 11 and a second electrode 13 are provided, and a first retaining wall 15 and a second retaining wall 17 are respectively formed on one surface of the first electrode 11 and the second electrode 13;

The substrate 30 is provided, and the first electrode 11 and the second electrode 13 are coupled to the substrate 30 to form a pedestal 40. The first electrode 11 and the second electrode 13 are spaced apart from each other by the substrate 30. The first retaining wall 15 and the second retaining wall 17 are spaced apart;

A package body 50 having a receiving cup 51 is formed on the top surface of the base 40, and the first retaining wall 15 and the second retaining wall 17 are exposed on the outer side surface of the package body 50;

Providing a light emitting chip 60, electrically connecting the light emitting chip 60 to the first electrode 11 and the second electrode 13;

The accommodating cup 51 of the package 50 is filled with phosphor powder to form an encapsulating layer 53 covering the bottom of the accommodating cup 51 of the luminescent wafer 60, thereby forming the illuminating diode 1.

The process will be described in detail below in conjunction with other diagrams.

In the first embodiment, the manufacture of the light-emitting diode 1 includes the following steps:

In the first step, referring to FIG. 2 and FIG. 3, a first electrode 11, a second electrode 13, a first metal plate 21, and a second metal plate 23 are provided, and the first metal plate 21 and the second metal plate are provided. 23 is attached to the surface of the first electrode 11 and the second electrode 13 respectively; the first electrode 11 and the second electrode 13 are rectangular plates having the same thickness. The first metal plate 21 and the second metal plate 23 are similar in structure to the first electrode 11 and the second electrode 13, and are also rectangular plates of equal thickness, except that the first metal plate 21 and the second metal are The thickness of the plate 23 is greater than the thickness of the first electrode 11 and the second electrode 13. After the first metal plate 21 and the second metal plate 23 are attached to the first electrode 11 and the second electrode 13, the respective edges thereof are flush with the edges of the first electrode 11 and the second electrode 13 in parallel.

In the second step, referring to FIG. 4, the first metal plate 21 and the second metal plate 23 are etched to remove a portion of the first metal plate 21 and a portion of the second metal plate 23, thereby forming the first electrode 11 and the first electrode Two opposite first side walls 15 and two spaced second retaining walls 17 are formed on opposite sides of one side surface of the two electrodes 13.

Each of the first retaining walls 15 and each of the second retaining walls 17 is an elongated metal strip. The first spacers 15 are respectively disposed on the opposite sides of the first surface of the first electrode 11 , and an outer side of each of the first barriers 15 is parallel to a corresponding side of the first electrode 11 . The first retaining wall 15 is spaced apart from the inner side of the outer side surface. The two end faces of each of the first retaining walls 15 are located on the inner side of the two end faces of the first electrode 11 and form a common surface with the one side surface of the first electrode 11 . The first combination portion 25 of the "L" shape.

The second spacers 17 are respectively disposed on the opposite sides of the surface of one side of the second electrode 13 , and an outer side of each of the second barriers 17 is parallel to a corresponding side of the second electrode 13 . The second retaining wall 17 is spaced apart from the inner side surface opposite to the outer side surface. The two end faces of each second retaining wall 17 are located on the inner side of the two end faces of the second electrode 13 and are formed together with the one side surface of the second electrode 13 . An "L" shaped second combination portion 27.

In the third step, referring to FIG. 5 , a substrate 30 is disposed. The substrate 30 is disposed between the first electrode 11 and the second electrode 13 and is fixedly connected to the first electrode 11 and the second electrode 13 . A susceptor 40 is formed together with the first electrode 11 and the second electrode 13.

The substrate 30 is an elongated insulating plate body having a "convex" shape along a longitudinal direction of the base 40. The substrate 30 includes an elongated main body portion 301 and a longitudinally extending longitudinally from the central portion of the main body portion 301. A long protrusion 303. The width of the protruding portion 303 extending along the longitudinal direction of the base 40 is smaller than the width of the main body portion 301 extending along the longitudinal direction of the base 40, and the opposite end faces of the protruding portion 303 are respectively parallel to the opposite end faces of the main body portion 301. In this manner, the L-shaped step portions are respectively formed on both side edges of the substrate 30 extending laterally along the susceptor 40.

When the first electrode 11 and the second electrode 13 are combined with the substrate 30, the substrate 30 is interposed between the first electrode 11, the second electrode 13, and the two first retaining walls 15 and the second retaining wall 17, and The first combining portion 25 and the second combining portion 27 are respectively engaged with the step portions on opposite sides of the substrate 30, so that the first electrode 11, the second electrode 13, and the substrate 30 are combined. At this time, the opposite sides of the first electrode 11 and the second electrode 13 are respectively parallel to the opposite end faces of the substrate 30, and the first electrode 11 is away from the side surface of the first retaining wall 15 and the second electrode 13 is away from the second surface. The one surface of the retaining wall 17 is parallel to the end surface of the protruding portion 303 of the substrate 30 away from the end surface of the main body portion 301, and the end surface of the main body portion 301 away from the protruding portion 303 is located at the first wall 15 and the second The inner side of the end faces of the retaining wall 17 close to each other. It is not difficult to understand that in this step, the substrate 30 may be interposed only between the first electrode 11 and the second electrode 13 without being connected to the first retaining wall 15 and the second retaining wall 17.

In the fourth step, referring to FIG. 6, a package body 50 covering the base 40 is formed on the top surface of the base 40. The respective edges of the package 50 are parallel to the respective edges of the base 40. And facing the first retaining wall 15 and the second retaining wall 17 to the outer side of the package.

The package body 50 is substantially a rectangular parallelepiped covering the one end surface of the protruding portion 303 of the substrate 30 away from the main body portion 301, the first electrode 11 and the second electrode 13 away from the first retaining wall 15 and the second retaining wall 17 On one side of the surface, the respective edges of the package 50 are respectively coplanar with the respective edges of the base 40.

The package body 50 is made of epoxy resin, enamel resin or polyphthalamide (PPA), which has a reflective effect.

A receiving cup 51 is disposed in the middle of the package body 50. The receiving cup 51 is configured to receive a subsequent illuminating wafer 60. The top end and the bottom end of the accommodating cup 51 have a circular cross section. The receiving cup 51 is a circular surface. The inner diameter of the receiving cup 51 is gradually reduced from the top end to the bottom end, and the cross section of the top end of the receiving cup 51 is the light emitting surface of the light emitting wafer 60.

In the fifth step, referring to FIG. 7, an illuminating wafer 60 is electrically connected to the first electrode 11 and the second electrode 13; specifically, the illuminating wafer 60 is fixed to the first electrode 11 away from the first electrode 11 The middle portion of one side surface of the first retaining wall 15 is located at the bottom of the receiving cup 51. The two electrodes of the luminescent wafer 60 are electrically connected to the first electrode 11 and the second electrode 13 by two metal leads 61 and 62, respectively. It can be understood that the illuminating chip 60 can also be disposed on the second electrode 13 or directly on the top end of the protrusion 303 of the substrate 30. The illuminating chip 60 can also be flip-chip or eutectic with the first The electrode 11 and the second electrode 13 are electrically connected.

In the sixth step, referring to FIG. 8 , the accommodating cup 51 of the package 50 is filled with phosphor powder to form an encapsulation layer 53 , and the encapsulation layer 53 covers the illuminating wafer 60 at the bottom of the accommodating cup 51 . Specifically, the phosphor powder is filled in the receiving cup 51, and the fluorescent powder is coated on the light emitting chip 60. The receiving cup 51 and the surrounding package 50 together form a cup-like structure, and the cup-shaped structure is used for The lateral light emitted from the light-emitting chip 60 is concentrated on the circular surface of the top end of the receiving cup 51, thereby increasing the forward light-emitting intensity of the light-emitting diode 1.

In the second embodiment, the first and second electrodes 11, 13 and the first and second metal plates 21, 23 can also be combined by compression molding, as follows:

Step 1, referring to FIG. 9, a first electrode layer 31 and a second electrode layer 33 having the same thickness are provided. The first electrode layer 31 and the second electrode layer 33 are each a rectangular plate body made of a metal conductive material. to make.

Step 2, referring to FIG. 10, a mold 70 is provided. The mold 70 has a bearing portion 73 provided with two first through holes 711 and two second through holes 713, and a plurality of partitions mounted on the carrying portion 73. Part 75. The two first through holes 711 and the second second through holes 713 are respectively disposed between two adjacent barrier portions 75 and are spaced apart in a direction in which the mold 70 extends laterally. The first through holes 711 and the second through holes 713 are spaced apart from each other. Each of the molds 70 extends through the entire mold 70 in the thickness direction of the mold 70, and is a rectangular parallelepiped. The difference is that the length of the first through hole 711 extending along the longitudinal direction of the mold 70 is greater than the length of the second through hole 713 extending along the longitudinal direction of the mold 70. . The two adjacent sides of the two adjacent barrier portions 75 are a vertical plane for abutting the two end faces of the first electrode layer 31 and the second electrode layer 33 which are away from each other, and the blocking portion The height of 75 extending vertically upward in the thickness direction of the mold 70 should be greater than or equal to the thickness of the first electrode layer 31 and the second electrode layer 33. In the present embodiment, the blocking portion 75 is a bump having a rectangular longitudinal section extending in the lateral direction of the mold 70. It is to be understood that the barrier portion 75 may have other shapes such as a bump having a triangular cross section extending in the lateral direction of the mold 70 in a longitudinal direction.

Step 3, referring to FIG. 11 and FIG. 12, the first electrode layer 31 and the second electrode layer 33 are respectively disposed between the two adjacent barrier portions 75, and respectively correspond to the first through holes 711 and a second through hole 713, and a side surface of the first electrode layer 31 and the second electrode layer 33 opposite to the top end of the supporting portion 73 is provided with a side surface of the blocking portion 75, and then from the first electrode layer 31 The first electrode layer 31 and the second electrode layer 33 are pressed against the one surface of the second electrode layer 33 away from the carrying portion 73, so that the first electrode layer 31 and the second electrode layer 33 face the first through hole 711 of the carrying portion 73, respectively. And the second through hole 713 protrudes outwardly, and the first electrode layer 31 and the second electrode layer 33 are pressed to form a first electrode 11 and a second electrode 13 above the carrying portion 73, and are respectively located at the first pass Two first protrusion structures 115 and two second protrusion structures 117 in the holes 711 and the second second holes 713.

Step 4, referring to FIG. 13, the first electrode 11, the second electrode 13, and the two first protrusion structures 115 and the second surface respectively formed on the surface of the first electrode 11 and the second electrode 13 are vertically removed upward. The two raised structures 117 are separated from the mold 70, and the outer sides of the two first raised structures 115 are aligned with the corresponding sides of the first electrodes 11 by using a cutter or other cutters, thereby forming the first Two spaced first barrier walls 15 on one side of the electrode 11; and the outer sides of the second second projections 117 are also aligned with the corresponding sides of the second electrode 13 to form a surface on the side of the second electrode 13 Two spaced second retaining walls 17.

In the third embodiment, the first electrode 11 and the second electrode 13 and the first and second metal plates 21 and 23 can also be combined by electroplating, as follows:

Referring to FIG. 14, first, a first electrode 11 and a second electrode 13 are provided, and the first electrode 11 and the second electrode 13 are respectively rectangular plates, and then the first electrode 11 and the second electrode 13 are respectively provided. The opposite sides of the opposite side surfaces are respectively plated to form a second spaced first retaining wall 15 and a second spaced second retaining wall 17.

In summary, the first barrier wall 15 and the second barrier wall 17 are disposed on opposite sides of one side surface of the first electrode 11 and the second electrode 13 during mounting. Therefore, one side surface of the first electrode 11 and the second electrode 13 and the corresponding first and second retaining walls 15 and 17 of the second retaining wall 17 are simultaneously attached to the circuit board, thereby increasing the contact area with the circuit board. Therefore, the contact between the two is more firm, and at the same time, the heat dissipation area is increased, and the first electrode 11, the second electrode 13, the first retaining wall 15 and the first portion of the light-emitting diode 1 are not in contact with the circuit board. The second retaining wall 17 is directly exposed to the air, thereby enhancing its heat dissipation effect. At the same time, the first retaining wall 15 and the second retaining wall 17 are exposed at the bottom of the light-emitting diode 1 , so that multi-directional installation can be performed, and different circuit board installations can be adapted, and the installation adaptability is strong.

1. . . Light-emitting diode

11. . . First electrode

13. . . Second electrode

15. . . First retaining wall

17. . . Second retaining wall

twenty one. . . First metal plate

twenty three. . . Second metal plate

25. . . First combination department

27. . . Second combination department

30. . . Substrate

31. . . First electrode layer

33. . . Second electrode layer

40. . . Pedestal

50. . . Package

51. . . Containing cup

53. . . Encapsulation layer

60. . . Light emitting chip

61, 62. . . Metal lead

70. . . Mold

73. . . Carrying part

75. . . Barrier

115. . . First raised structure

117. . . Second raised structure

301. . . Main body

303. . . Protrusion

711. . . First through hole

713. . . Second through hole

1 is a schematic flow chart showing the steps of a method for manufacturing a light-emitting diode according to the present invention.

2 to 8 are schematic views showing respective steps of a method of manufacturing a light-emitting diode according to a first embodiment of the present invention.

9 to FIG. 13 are schematic diagrams showing steps of forming a first electrode, a second electrode, a first retaining wall and a second retaining wall of a light-emitting diode according to a second embodiment of the present invention.

FIG. 14 is a schematic diagram showing the steps of forming a first electrode, a second electrode, and a first retaining wall and a second retaining wall of the LED according to the third embodiment of the present invention.

Claims (10)

A method for manufacturing a light-emitting diode includes the following steps:
Providing a first electrode and a second electrode, and forming a first retaining wall and a second retaining wall on one side surface of the first electrode and the second electrode;
Providing a substrate, bonding the first electrode and the second electrode to the substrate to form a pedestal, wherein the first electrode and the second electrode are spaced apart from each other by the substrate, the first retaining wall and the second Retaining wall spacing setting;
Forming a package body having a receiving cup on the surface of the top end of the base, and exposing the first retaining wall and the second retaining wall to an outer side surface of the package body;
Providing a light emitting chip, electrically connecting the light emitting chip to the first electrode and the second electrode;
The phosphor powder is filled in the receiving cup of the package to form an encapsulating layer covering the bottom of the receiving cup of the light emitting chip, thereby forming a light emitting diode. The method for manufacturing a light-emitting diode according to claim 1, wherein the first retaining wall and the second retaining wall are formed by etching. The method for manufacturing a light-emitting diode according to the second aspect of the invention, wherein the forming the first retaining wall and the second retaining wall by etching comprises providing the first metal plate and the second metal plate respectively On one side surface of the first electrode and the second electrode, the first metal plate and the second metal plate are etched to remove a portion of the first metal plate and a portion of the second metal plate, thereby A first retaining wall and a second retaining wall are respectively formed on one surface of one electrode and the second electrode. The method for manufacturing a light-emitting diode according to claim 1, wherein the first retaining wall and the second retaining wall are formed by compression molding. The method for manufacturing a light-emitting diode according to claim 4, wherein the forming the first retaining wall and the second retaining wall by using a stamper comprises providing a first electrode layer, a second electrode layer, and a mold. The mold includes a carrying portion and a blocking portion mounted on the carrying portion, the carrying portion is provided with a first through hole and a second through hole, and the first through hole and the second through hole are separated by the first through hole The first electrode layer and the second electrode layer are respectively disposed between the barrier portions, and respectively correspond to the first through hole and the second through hole of the bearing portion, and press the first electrode layer And the second electrode layer, the first electrode layer and the second electrode layer are respectively protruded toward the first through hole and the second through hole of the carrying portion, and the first electrode layer and the second electrode layer are pressed to form the bearing The first electrode and the second electrode above the portion, and the first protrusion structure and the second protrusion structure respectively located in the first through hole and the second through hole, the first protrusion structure and the second protrusion The structure forms the first retaining wall and the second retaining wall, respectively. The method for manufacturing a light-emitting diode according to claim 5, wherein the first convex structure and the second convex structure respectively form the first retaining wall and the second retaining wall comprises the The outer side surfaces of the first convex structure and the second convex structure are respectively aligned with the side surfaces corresponding to the first electrode and the second electrode. The method for manufacturing a light-emitting diode according to claim 1, wherein the first retaining wall and the second retaining wall are formed by direct plating. The method for manufacturing a light-emitting diode according to the first aspect of the invention, wherein the substrate is only interposed between the first electrode and the second electrode, or by the first electrode and the second electrode The first retaining wall and the second retaining wall are co-interposed. The method for manufacturing a light-emitting diode according to the first aspect of the invention, wherein: the opposite end faces of the first retaining wall and the second retaining wall are respectively located on one side surface of the first electrode and the second electrode The inside. The method for manufacturing a light-emitting diode according to claim 1, wherein: an outer side of the first retaining wall and the second retaining wall respectively correspond to a side of the first electrode and the second electrode Parallel coplanar.