TW201346049A - Vacuum deposition apparatus - Google Patents

Abstract

A vacuum deposition apparatus 1 comprises a first evaporation source 3 wherein deposition material 30 is evaporated, a second evaporation source 4 wherein deposition material 40 is evaporated, a deposition rate control section 81 controlling respective motions of the first and the second evaporation sources, setting deposition rate memory sections 82a and 82b, respectively, memorizing the setting deposition rates A1, A2 of the first and the second evaporation sources which are preset, and a first and a second film thickness meters 7a, 7b for measuring mixed deposition rates Y1, Y2 of respective deposition materials. A measuring section 85 calculates the respective deposition rates X1, X2 of the first and the second evaporation sources based on a reaching quantity ratio B1 of the second film thickness meter 7b to the first film thickness meter 7a regarding one deposition material, a reaching quantity ratio B2 of the first film thickness meter 7a to the second film thickness meter 7b regarding the other deposition material, and the mixed deposition rates Y1, Y2. The deposition rate control section 81 controls the first and the second evaporation sources 3 and 4 so as to make the calculated value and the setting value.

Description

Vacuum evaporation device

The present invention relates to a vacuum vapor deposition apparatus which deposits a vapor deposition material onto a plurality of vapor-deposited bodies such as a substrate to form a thin film.

In the vacuum vapor deposition apparatus, an evaporation source including a vapor deposition material, a vapor-deposited body such as a substrate, and the like are disposed in a vacuum chamber, and the evaporation source is heated in a state where the pressure is reduced in the vacuum chamber to vaporize the evaporation source. This vaporized vapor deposition material is deposited on the surface of the vapor-deposited body to form a film. However, in some cases, a part of the vapor deposition material vaporized from the evaporation source does not advance toward the vapor-deposited body, and does not adhere to the surface of the vapor-deposited body. When the amount of the vapor deposition material that does not adhere to the vapor-deposited body increases, the material use efficiency is lowered and the vapor deposition rate is lowered. Therefore, there is known a vacuum vapor deposition apparatus which uses a cylindrical body to surround a space in which an evaporation source and a plurality of vapor deposition bodies face each other, and heats the cylindrical body at a temperature at which the vapor deposition material re-evaporates, so that the vaporized vapor deposition material passes. The inside of the cylindrical body is vapor-deposited to the surface of the vapor-deposited body (see, for example, Patent Document 1).

However, in the production of an organic EL device, for example, when an organic semiconductor layer is formed by a vacuum vapor deposition apparatus, it is necessary to mix a plurality of vapor deposition materials in one cylindrical body, and to vapor-deposit the mixed film onto the surface of the vapor-deposited body. However, in this case, even if one film thickness meter is placed in the cylindrical body to monitor the vapor deposition rate of the vapor deposition material, the vapor deposition material adheres to the film thickness meter in a state in which the respective vapor deposition materials are mixed, and thus cannot be individually monitored. The vapor deposition rate of each vapor deposition material.

Therefore, there is known a thin film forming apparatus that irradiates a mixed film vapor-deposited to a vapor-deposited body with light of two kinds of wavelengths, and calculates a material composition in the mixed film from the attenuation rate of each wavelength in the reflected light, and This value is fed back to the evaporation rate control of the evaporation source (for example, refer to Patent Document 2).

[Previous Technical Literature] [Patent Literature]

Patent Document 1: Japanese Laid-Open Patent Publication No. 2003-129224

Patent Document 2: Japanese Laid-Open Patent Publication No. 2011-195871

However, in the thin film forming apparatus described in Patent Document 2, the material composition of the thin film deposited into the vapor-deposited body is actually calculated, and the evaporation amount of the vapor deposition material in each evaporation source cannot be linearly monitored. Therefore, it is not possible to appropriately correct the vapor deposition rate during vapor deposition, and it is also required to provide a laser device that outputs light or a photodiode that detects reflected light.

The present invention has been made in view of the above problems, and an object of the invention is to provide a vacuum vapor deposition apparatus capable of individually performing vapor deposition of an evaporation source for evaporating each vapor deposition material by a simple configuration when a plurality of vapor deposition materials are vapor-deposited to a vapor deposition material. Rate, and can correctly control the film thickness and mixing concentration ratio of the film.

In order to solve the above problems, the present invention is a vacuum vapor deposition apparatus which deposits a plurality of vapor deposition materials onto a vapor-deposited body, and is characterized by comprising: a first evaporation source for evaporating a vapor deposition material; and a second evaporation source And evaporating another vapor deposition material; the vapor deposition rate control unit controls the operations of the first and second evaporation sources, and sets the vapor deposition rate storage unit to store the preset settings of the first and second evaporation sources respectively. The vapor deposition rates A1 and A2; the first film thickness gauge and the second film thickness gauge are used to adhere the vapor deposition materials evaporated from the first and second evaporation sources, and measure the vapor deposition of each vapor deposition material from the film thickness thereof. The plating speeds Y1 and Y2 are arranged such that the first film thickness gauge is disposed closer to the first evaporation source than the second evaporation source, and the second film thickness gauge is disposed closer to the first evaporation source than to the first evaporation source. a position of the second evaporation source; a mixed vapor deposition rate memory unit that memorizes the mixed vapor deposition rates Y1 and Y2 measured by the two film thickness meters; and the arrival amount ratio memory portion, and the memory reaches from the first evaporation source to the respective Among the vapor deposition materials per unit time of the two film thickness gauges, the amount of arrival of the second film thickness with respect to the vapor deposition material of the first film thickness B1, and the second evaporation source The ratio of the arrival amount of the first film thickness gauge to the other vapor deposition material of the second film thickness to the other vapor deposition material of the two film thickness gauges per unit time; and the measurement The first and second evaporation sources are calculated from the mixed vapor deposition rates Y1 and Y2 stored in the mixed vapor deposition rate memory unit and the arrival amount ratios B1 and B2 stored in the memory amount. Speed X1, X2; and the vapor deposition rate control unit controls at least one of the first and second evaporation sources, and vapor-deposits the first and second evaporation sources calculated by the measuring unit At least one of the speeds X1 and X2 is respectively stored in the set vapor deposition speeds A1 and A2 of the set vapor deposition speed memory unit. The same one.

Preferably, in the vacuum vapor deposition apparatus, the measuring unit subtracts the set vapor deposition speed stored in the set vapor deposition rate memory unit from the mixed vapor deposition rates Y1 and Y2 stored in the mixed vapor deposition rate memory unit. A2 and A1 respectively calculate the vapor deposition rates X1 and X2 of the first and second evaporation sources by multiplying the values of the arrival amount ratios B2 and B1 of the arrival amount ratio memory unit.

In the above-described vacuum vapor deposition apparatus, it is preferable to add only the first vapor deposition rates C1 and C2 measured by the first and second film thickness gauges when the first evaporation source is operated. (2) The values of the second vapor deposition rates D1 and D2 measured by the first and second film thickness gauges when the evaporation source is operated are determined as the first virtual mixed vapor deposition rates E1 and E2, and the first and the first When the second evaporation source is operated, the first and second film thickness gauges are respectively measured at the second virtual mixed vapor deposition rates F1 and F2, and the measurement unit multiplies the mixed vapor deposition rates Y1 and Y2. The vapor deposition rate correction coefficients K1 and K2 are used to calculate the corrected mixed vapor deposition speeds Y'1, Y'2, and the mixed vapor deposition speeds Y'1, Y'2 are used instead of the mixed vapor deposition speed Y1, respectively. Y2, the correction coefficients K1 and K2 are values obtained by dividing the first virtual mixed vapor deposition rates E1 and E2 by the second virtual mixed vapor deposition rates F1 and F2, respectively.

In the vacuum vapor deposition apparatus described above, the amount of arrival is stored in the memory unit in advance in the amount of arrival ratios B1 and B2, and the vapor deposition rate correction coefficients K1 and K2 are set in advance in the measurement unit.

Preferably, the vacuum vapor deposition apparatus further includes a display unit that displays vapor deposition speeds X1 and X2 of the first and second evaporation sources calculated by the measurement unit.

Preferably, in the vacuum vapor deposition apparatus, the vapor deposition rate control unit controls the temperatures of the first and second evaporation sources, respectively.

In the vacuum vapor deposition apparatus described above, the vapor deposition rate control unit controls the opening degree of the valve to change the opening area of each of the evaporation openings of the first and second evaporation sources.

Preferably, in the vacuum vapor deposition apparatus, the distance between the second evaporation source and the second film thickness gauge is shorter than the distance between the first evaporation source and the first film thickness.

Preferably, the vacuum vapor deposition apparatus is provided with a cylindrical flow path having openings in the vicinity of the evaporation opening of the second evaporation source and in the vicinity of the second film thickness meter.

Preferably, the vacuum vapor deposition apparatus is provided with a cylindrical flow path having openings in the vicinity of the evaporation opening of the first evaporation source and in the vicinity of the first film thickness gauge.

It is preferable that the vacuum vapor deposition apparatus further includes a cylindrical body surrounding a space between the first and second evaporation sources and the vapor-deposited body, and having an opening surface on the vapor-deposited body side.

According to the present invention, the amount of arrival ratios B1 and B2 are measured in advance, and the mixed vapor deposition rates Y1 and Y2 of the two film thickness meters are measured, and the vapor deposition materials from the first and second evaporation sources can be individually monitored. The deposition rate X1, X2 (vapor deposition rate). Further, by making the vapor deposition rates X1 and X2 match the set vapor deposition rates A1 and A2, the vapor deposition rate of the vapor deposition material actually evaporating from the first and second evaporation sources can be set as a set value, and can be accurately Control the film thickness and mixing concentration ratio of the film.

1‧‧‧Vacuum evaporation device

2‧‧‧Extruded body

3‧‧‧1st evaporation source

4‧‧‧2nd evaporation source

5‧‧‧Cylinder

6‧‧‧vacuum chamber

7a‧‧‧1st film thickness meter

7b‧‧‧2nd film thickness meter

8‧‧‧Control device

30‧‧‧A vapor deposition material

31, 41‧‧‧ heating container

32, 42‧‧‧ evaporation source heater

33, 43‧‧‧ power supply

34, 44‧‧‧ thermometer

35, 45‧‧‧ Evaporation source temperature controller

40‧‧‧Another evaporation material

51‧‧‧Open face

52‧‧‧ bottom

53‧‧‧heater

54‧‧‧Power supply

55‧‧‧Temperature Sensor

56‧‧‧Cylinder temperature controller

61‧‧‧Vacuum pump

81‧‧‧Deposition rate control department

82a, 82b‧‧‧ evaporation rate memory

83a, 83b‧‧‧ Mixed evaporation speed memory

84a, 84b‧‧‧ reach ratio memory department

85, 85a, 85b‧‧‧Measurement Department

86‧‧‧Display Department

91, 92‧‧‧ cylindrical flow passage

A1‧‧‧Set evaporation rate of the first evaporation source

A2‧‧‧Set evaporation rate of the second evaporation source

The ratio of the amount of vapor deposition material of a B1‧‧‧2nd film thickness meter

B2‧‧‧1st thickness gauge of another vapor deposition material

X1‧‧‧ evaporation rate of the first evaporation source

X2‧‧‧ evaporation rate of the second evaporation source

Hybrid evaporation rate measured by Y1‧‧‧1st film thickness meter

Mixed vapor deposition rate measured by Y2‧‧‧2nd film thickness meter

The evaporation rate of the first evaporation source measured by the C1‧‧‧ first film thickness meter

The vapor deposition rate of the first evaporation source measured by the C2‧‧‧ the second film thickness meter

The evaporation rate of only the second evaporation source measured by the D1‧‧‧1st film thickness meter

The vapor deposition rate of only the second evaporation source measured by the D2‧‧‧ the second film thickness meter

The first hypothetical mixed evaporation rate measured by the E1‧‧‧1st film thickness meter

The first hypothetical mixed evaporation rate measured by the E2‧‧‧ the second film thickness meter

The second hypothetical mixed evaporation rate measured by the F1‧‧‧1st film thickness meter

The second hypothetical mixed evaporation rate measured by the F2‧‧‧2nd film thickness meter

Correction rate of evaporation rate in K1‧‧‧1st film thickness meter

Curing speed correction factor in K2‧‧‧2nd film thickness meter

Mixed vapor deposition rate in Y'1‧‧‧1st film thickness meter

Mixed vapor deposition rate in Y'2‧‧‧2nd film thickness meter

Fig. 1 is a block diagram showing a side cross section of a vacuum vapor deposition device according to a first embodiment of the present invention and a control device.

Fig. 2 is a block diagram showing a side cross section of a vacuum vapor deposition device according to a modification of the above embodiment and a control unit device.

Fig. 3 is a block diagram showing a side cross section of a vacuum vapor deposition device and a control unit device according to another modification of the above embodiment.

Fig. 4 is a block diagram showing a side cross section of a vacuum vapor deposition device and a control unit device according to still another modification of the embodiment.

Fig. 5 is a block diagram showing a side cross section of a vacuum vapor deposition device according to a second embodiment of the present invention and a control device.

[Best Mode for Carrying Out the Invention]

Hereinafter, a vacuum vapor deposition apparatus according to a first embodiment of the present invention will be described with reference to Fig. 1 . In the vacuum vapor deposition apparatus 1 of the present embodiment, a plurality of vapor deposition materials (in this example, two types) are vapor-deposited to the vapor-deposited body 2, and the first evaporation source 3 is included to evaporate one vapor deposition material 30. And the second evaporation source 4 evaporates the other vapor deposition material 40. Further, the vacuum vapor deposition apparatus 1 includes a cylindrical body 5 that surrounds a space between the first and second evaporation sources 3 and 4 and the vapor-deposited body 2, and has an opening surface on the side of the vapor-deposited body 2; In the chamber 6, the space in which the vapor-deposited body 2, the first and second evaporation sources 3 and 4, and the cylindrical body 5 are disposed is in a vacuum state. The vacuum chamber 6 is configured such that the inside of the vacuum chamber 61 can be depressurized to a vacuum state.

The cylindrical body 5 has an opening surface 51 at one end thereof, and the vapor-deposited body 2 such as a substrate is disposed to face the opening surface 51. For example, the vapor-deposited body 2 is conveyed in a deep direction from the front direction of the drawing by a transport mechanism (not shown). The other ends of the cylindrical body 5 are respectively provided with the first and second evaporation sources 3 and 4 at different positions, and the portions where the first and second evaporation sources 3 and 4 are not disposed are connected by the bottom portion 52. A cylindrical heater (hereinafter referred to as a heater 53) composed of a sheath heater or the like is surrounded by the outer circumference of the cylindrical body 5. The heater 53 receives the power supply by connecting to the power source 54 to add the cylindrical body 5 heat. Further, the bottom portion 52 of the cylindrical body 5 is provided with a temperature sensor 55 for measuring the temperature in the cylindrical body 5. The measurement information of the temperature sensor 55 is output to a cylindrical body temperature composed of a CPU and a memory. Degree controller 56. The cylindrical body temperature controller 56 receives the measurement information of the temperature sensor 55 and controls the amount of electric power supplied from the power source 54 to the heater 53, and the temperature in the cylindrical body 5 can be adjusted. By the cylindrical body 5, the vapor deposition materials 30 and 40 from the first and second evaporation sources 3 and 4 can be efficiently advanced toward the vapor-deposited body 2. Further, the opening surface 51 may be provided with a correction plate (not shown) having a plurality of openings for freely switching to control vaporization from the cylindrical body 5 to the vapor-deposited body 2. The flow rate of the plating material.

The cylindrical body 5 is attached with a first film thickness gauge 7a and a second film thickness gauge 7b, and faces a side opening portion (not shown) provided on a side wall thereof. These two film thickness gauges 7a and 7b are composed of a quartz oscillator film thickness gauge or the like, and are used to measure the film thickness of the vapor deposition materials 30 and 40 per unit time which are adhered to the surface by vapor deposition. Measure the evaporation rate. The first film thickness gauge 7a is disposed closer to the first evaporation source 3 than the second film thickness gauge 7b, and the second film thickness gauge 7b is disposed closer to the second evaporation source than the first film thickness gauge 7a. 4 location. The film thickness gauges 7a and 7b measure the vapor deposition rate of the vapor deposition material 30 during the operation of the first evaporation source 3, for example, regardless of the type or composition of the vapor deposition materials 30 and 40, and measure the vaporization during the operation of the second evaporation source 4, respectively. The vapor deposition rate of the plating material 40 measures the mixed vapor deposition rates Y1 and Y2 of the vapor deposition materials 30 and 40 during both operations. The data on the vapor deposition rate measured by the film thickness gauges 7a and 7b are output to the control device 8 that controls the operation of the vacuum vapor deposition apparatus 1.

The first and second evaporation sources 3 and 4 hold the vapor deposition materials 30 and 40 in the heating containers 31 and 41 such as stacks. The heating containers 31 and 41 are embedded in the tubular body 5 such that the opening side thereof has the same height as the bottom portion 52 of the tubular body 5. These first and second evaporation sources 3 and 4 are disposed at different positions of the bottom portion 52 of the tubular body 5, respectively.

The vapor deposition materials 30 and 40 are made of any material, but an organic material such as an organic semiconductor material used for, for example, an organic electroluminescence device is suitably used. In the present embodiment, the vapor deposition material 30 filled in the first evaporation source 3 constitutes a main material of the main body of the vapor deposition film, and the vapor deposition material 40 filled in the second evaporation source 4 is doped to the main material. Doped material. The evaporation source heaters 32 and 42 are disposed in the peripheral portions of the heating vessels 31 and 41, respectively. These evaporation source heaters 32, The power is supplied to the power supplies 33 and 43 by heating, and the heating vessels 31 and 41 and the vapor deposition materials 30 and 40 are respectively heated. The heating vessels 31, 41 are provided with thermometers 34, 44 for measuring such temperatures, and the measurement information of the thermometers 34, 44 is output to the evaporation source temperature controllers 35, 45. The evaporation source temperature controllers 35, 45 are connected to the vapor deposition rate control portion 81 of the control device 8. The vapor deposition rate control unit 81 receives the measurement information of the thermometers 34 and 44, and controls the temperature in the heating containers 31 and 41 by controlling the amount of electric power supplied from the power sources 33 and 43 to the evaporation source heaters 32 and 42, and controls the respective temperatures. The evaporation rate of 1 and the second evaporation sources 3, 4. Thereby, the vapor deposition rate of the actual vapor deposition materials 30 and 40 vapor-deposited to the vapor-deposited body 2 is controlled.

The control device 8 includes setting the vapor deposition rate storage units 82a and 82b, and storing the preset vapor deposition rates A1 and A2 of the first and second evaporation sources 3 and 4 set in advance, and the mixed vapor deposition rate storage units 83a and 83b. The mixed vapor deposition rates Y1 and Y2 measured by the film thickness gauges 7a and 7b are respectively stored.

Further, the control device 8 includes the arrival amount ratio memory units 84a and 84b, and stores the arrival amount ratios B1 and B2 of the vapor deposition materials 30 and 40 reaching the respective film thickness gauges 7a and 7b, respectively. The amount of arrival on one side is greater than the memory thickness of the first film thickness per unit time 7a, 7b from the first evaporation source 3, and the second film thickness 7b is relatively thicker than the first film thickness. The amount of arrival of the vapor deposition material 30 of the gauge 7a is B1. In other words, when the film thickness of the vapor deposition material 30 reaching the first film thickness gauge 7a per unit time is "1", the amount of arrival reaches the vapor deposition material 7b per unit time. The film thickness of the material 30. Since the second film thickness gauge 7b is far from the first evaporation source 3, the concentration of the vapor deposition material 30 in the vicinity of the second film thickness gauge 7b is thinner than the vicinity of the first film thickness gauge 7a, and the amount of arrival ratio B1 is small. The value is usually below "1". Further, the amount of arrival on the other side is greater than the first film thickness gauge 7a of the other vapor deposition material 40 that is stored in the vapor deposition material 40 per unit time from the second evaporation source 4 to the film thickness gauges 7a and 7b. The other amount of vapor deposition material 40 of the film thickness meter 7b reaches the amount B2. When the amount of arrival ratio B2 and the amount of arrival ratio B1 are opposite to each other, the film thickness of the other vapor deposition material 40 reaching the second film thickness gauge 7b per unit time is set to "1", and reaches the first film per unit time. The film thickness of the other vapor deposition material 40 of the thickness gauge 7a. The amount of arrival ratios B1 and B2 are measured by individually operating the first and second evaporation sources 3 and 4 before the vacuum deposition of the vapor-deposited body 2 is started, as long as it is applied to a vacuum evaporation apparatus. The arrangement of the cylindrical body 5 or the film thickness gauges 7a and 7b of 1 is not changed, that is, it is given as a constant.

Further, the control device 1 includes the mixed vapor deposition speeds Y1 and Y2 stored in the mixed vapor deposition rate storage units 83a and 83b from the measuring unit 85, and the arrival amount ratio B1 stored in the arrival amount ratio memory units 84a and 84b. B2 calculates the vapor deposition rates X1 and X2 of the first and second evaporation sources, respectively. Here, the following relationship is established between the mixed vapor deposition rates Y1 and Y2, the arrival amount ratios B1 and B2, and the vapor deposition rates X1 and X2 of the first and second evaporation sources.

Y1=X1+B2. X2... (Formula 1)

Y2=B1. X1+X2... (Formula 2)

Since the arrival amount ratios B1 and B2 are predetermined as constants, the measurement vaporization speeds Y1 and Y2 are measured by the two film thickness gauges 7a and 7b, and the measurement unit 85 can solve the above formula 1. The vapor deposition speeds X1 and X2 of the first and second evaporation sources 3 and 4 are calculated by the two-cube equation.

Further, the control device 8 includes a display unit 86 that displays the vapor deposition speeds X1 and X2 of the first and second evaporation sources 3 and 4 measured by the measuring unit 85. The display unit 86 can use a liquid crystal display or the like provided in the control device 8 itself, or can output a predetermined display signal to a display terminal outside the device.

The vapor deposition rate control unit 81 outputs a control signal to the evaporation source temperature controllers 35 and 45 so that the vapor deposition rates X1 and X2 of the first and second evaporation sources 3 and 4 measured by the measurement unit 85 are respectively The set vapor deposition rates A1 and A2 stored in the vapor deposition rate storage sections 82a and 82b are set to match. Further, the evaporation source temperature controllers 35, 45 control the amounts of electric power supplied from the power sources 33, 43 to the evaporation source heaters 32, 42 to adjust the temperatures in the heating vessels 31, 41 to control the first and second evaporation sources 3 The evaporation amount of the vapor deposition materials 30 and 40 of 4. Further, the film thickness gauges 7a and 7b continuously measure the mixed vapor deposition rates Y1 and Y2, and after receiving the measurement unit 85, the vapor deposition rates X1 and X2 of the first and second evaporation sources 3 and 4 are calculated. Thereby, the vapor deposition speeds X1 and X2 of the first and second evaporation sources 3 and 4 are linearly monitored.

According to the vacuum vapor deposition apparatus 1 configured as above, the amount of arrival ratios B1 and B2 are measured in advance, and the mixed vapor deposition rates Y1 and Y2 of the two film thickness gauges 7a and 7b are measured, and the first and the third can be individually monitored. 2 The vapor deposition rates X1 and X2 (vapor deposition rates) of the vapor deposition materials 30 and 40 of the evaporation sources 3 and 4. By matching the vapor deposition rates X1 and X2 with the set vapor deposition rates A1 and A2, the vapor deposition materials 30 and 40 which are actually evaporated from the first and second evaporation sources 3 and 4 can be corrected as set values. Plating speed. As a result, the actual vapor deposition rate of the vapor deposition materials 30 and 40 with respect to the vapor-deposited body 2 can be appropriately controlled, and the film thickness or the mixed concentration ratio of the formed film can be accurately controlled.

Further, in some cases, the film thickness has a greater influence on the light-emitting characteristics than the vapor-deposited material in the vapor-deposited film due to the fabricated element structure. In this case, any of the vapor deposition rates X1 and X2 may be controlled. Further, for example, when the vapor deposition rate X1 of the first evaporation source 3 is small, the measurement accuracy of the vapor deposition rate X1 is deteriorated. At this time, the vapor deposition rate X2 of the second evaporation source 4 is large, and it is preferable to control only the vapor deposition rate X2 of the second evaporation source 4 while controlling the vapor deposition rates X1 and X2. Generally, the vapor deposition rate of the host material is greater than the vapor deposition rate of the dopant material, so it is desirable to control the vapor deposition rate of the host material.

Further, the control device 8 includes an operation unit (not shown) for manually controlling the vapor deposition speeds of the first and second evaporation sources 3 and 4 manually. Therefore, the operator can adjust the vapor deposition speeds of the first and second evaporation sources 3 and 4 by referring to the vapor deposition speeds X1 and X2 displayed on the display unit 86 and operating the operation unit.

Further, when the first and second evaporation sources 3 and 4 are individually operated, the film thicknesses measured by the first and second film thickness gauges 7a and 7b may be slightly different when the two are operated simultaneously. Therefore, the mixed vapor deposition rates Y1 and Y2 can be corrected by measuring these vapor deposition rates in advance.

Specifically, the values measured by the first and second film thickness gauges 7a and 7b when the first evaporation source 3 is operated are set as the first vapor deposition rates C1 and C2, respectively. In addition, the values measured by the first and second film thickness gauges 7a and 7b when the second evaporation source 4 is operated are determined as the second vapor deposition rates D1 and D2, respectively. At this time, the first vapor deposition rates C1 and C2 and the second vapor deposition rates D1 and D2 are respectively added to the first virtual mixed vapor deposition rates E1 and E2 by the following equations (3) and (4).

E1=C1+D1... (Equation 3)

E2=C2+D2... (Equation 4)

In addition, the values measured by the first and second film thickness gauges 7a and 7b when the first and second evaporation sources 3 and 4 are operated are set to the second virtual mixed vapor deposition rates F1 and F2, respectively. At this time, the measuring unit 85 calculates the vapor deposition rate correction coefficients K1 and K2 as shown in the following formulas 5 and 6, that is, the first virtual mixed vapor deposition rates E1 and E2 are respectively divided by the second virtual mixed vapor deposition speeds F1 and F2. After the value. Here, the measuring unit 85 sets the vapor deposition rate correction coefficients K1 and K2 in advance.

K1=E1/F1... (Equation 5)

K2=E2/F2... (Equation 6)

Then, the measuring unit 85 calculates the corrected mixed vapor deposition rates Y'1 and Y'2 by multiplying the mixed vapor deposition rates Y1 and Y2 as shown in the following Equations 7 and 8, and corrects and mixes them. The vapor deposition rates Y'1, Y'2 are used in place of the mixed vapor deposition rates Y1, Y2 shown in the above formulas (1) and (2), respectively.

Y1. K1=Y1'=X1+B2. X2... (Formula 7)

Y2. K2=Y2'=B1. X1+X2... (Equation 8)

Since the arrival amount ratios B1 and B2 and the vapor deposition rate correction coefficients K1 and K2 are predetermined as constants, the measurement vaporization speeds Y1 and Y2 are measured by the two film thickness gauges 7a and 7b, and the measurement unit 85 is used. The vapor deposition rates X1 and X2 of the first and second evaporation sources 3 and 4 can be individually calculated by solving the simultaneous equations of the above formulas 1 and 2. As a result, the vapor deposition rate of the vapor deposition materials 30 and 40 to the vapor-deposited body 2 can be more appropriately managed.

Next, a vacuum vapor deposition apparatus according to a modification of the above embodiment will be described with reference to Figs. 2 to 4 . The vacuum vapor deposition apparatus 1 of these modifications is designed to produce a film under the following conditions: the evaporation amount of the vapor deposition material 40 from the second evaporation source 4 is smaller than the evaporation amount of the vapor deposition material 30 from the first evaporation source 3. of. In this condition, the vacuum vapor deposition apparatus 1 according to the modification shown in Fig. 2 is separated from the first evaporation source 3 by the second evaporation source 4 and the second film thickness gauge 7b by a distance shorter than the first evaporation source 3 and the first film thickness gauge 7a. The way to set the location of these devices. The other configuration is the same as that of the above embodiment.

According to the vacuum vapor deposition apparatus 1 of the modification shown in FIG. 2, the distance between the second evaporation source 4 and the second thickness gauge 7b is shorter, and the concentration of the vapor deposition material 40 evaporated from the second evaporation source 4 is second. The vicinity of the film thickness meter 7b is higher. Therefore, it is easy to detect the adhesion of the vapor deposition material 40 from the second evaporation source 4 in the second film thickness meter 7b, and it is possible to improve the control precision of the vapor deposition rate when the film having a low doping concentration is produced.

The vacuum vapor deposition apparatus 1 according to the modification shown in FIG. 3 is provided with a cylindrical flow path 91 having openings in the vicinity of the evaporation opening of the second evaporation source 4 and in the vicinity of the second film thickness gauge 7b. The other configurations are the same as those of the above embodiment. In the vacuum vapor deposition apparatus 1 of this modification, the vapor deposition material 40 evaporated from the second evaporation source 4 is also passed through the cylindrical flow path 91 to the vicinity of the second film thickness gauge 7b. Therefore, in the second film thickness meter 7b, adhesion of the vapor deposition material 40 from the second evaporation source 4 can be easily detected, and the control accuracy of the vapor deposition rate when producing a film having a low doping concentration can be improved.

The vacuum vapor deposition apparatus 1 of the modification shown in FIG. 4 is provided with a cylindrical flow path 92 in the vicinity of the evaporation opening of the first evaporation source 3 and the first film thickness in the configuration of the modification shown in FIG. There is an opening near the meter 7a. In the vacuum vapor deposition apparatus 1 of the modification, the vapor deposition material 30 evaporated from the first evaporation source 3 flows into the vicinity of the first film thickness gauge 7a through the cylindrical flow path 92, so that the vapor deposition material 30 is capable of detecting Rising, and can improve the control accuracy of the evaporation rate.

Next, a vacuum vapor deposition apparatus according to a second embodiment of the present invention will be described with reference to Fig. 5 . The vacuum vapor deposition apparatus 1 of the present embodiment is different in the measurement method in the measuring unit 85 from the first embodiment. Further, the evaporation openings of the first and second evaporation sources 3 and 4 are provided with valves 36 and 46 that change the respective opening areas. Further, the vapor deposition rate control unit 81 controls the opening of the valves 36 and 46, respectively. The vapor deposition rate of the first and second evaporation sources 3, 4 is controlled in degrees. Further, the vapor deposition rate control unit 81 may perform temperature control of the first and second evaporation sources 3 and 4 as described above in the first embodiment.

Since the first film thickness gauge 7a is far from the second evaporation source 4, when the first vapor deposition rate 7a measures the mixed vapor deposition rate Y1, the influence of the vapor deposition rate X2 of the second evaporation source 4 is small, and the second evaporation is small. There is almost no difference between the vapor deposition rate X2 of the source 4 and the preset vapor deposition rate A2. Further, since the second film thickness gauge 7b is far from the first evaporation source 3, the second film thickness gauge 7b has a small influence on the vapor deposition rate X1 of the first evaporation source 3, in addition to measuring the mixed vapor deposition rate Y2. 1 The vapor deposition rate X1 of the evaporation source 3 is almost the same as the preset vapor deposition rate A1 set in advance. Therefore, the following relational expression is established between the mixed vapor deposition rates Y1, Y2, the arrival amount ratios B1, B2, the vapor deposition rates X1, X2 of the first and second evaporation sources, and the set vapor deposition speeds A1, A2.

Y1=X1+B2. A2... (Formula 9)

Y2=B1. A1+X2... (Formula 10)

Since the arrival amount ratios B1 and B2 are predetermined as constants, the vapor deposition rates A1 and A2 are set, and if the mixed vapor deposition speeds Y1 and Y2 are measured by the two film thickness gauges 7a and 7b, they are measured separately. In the above formulas 9 and 10, the vapor deposition rates X1 and X2 of the first and second evaporation sources 3 and 4 can be calculated individually. In other words, the measuring units 85a and 85b provided in the control unit 8 can subtract the values of the set vapor deposition speeds A2 and A1 by the arrival amount ratios B2 and B1 from the mixed vapor deposition speeds Y1 and Y2, respectively. The vapor deposition rates X1 and X2 of the first and second evaporation sources 3 and 4 are calculated, respectively. In other words, the vapor deposition rates X1 and X2 of the first and second evaporation sources 3 and 4 can be calculated by calculating the above-described Equations 9 and 10, respectively, without solving the simultaneous equation shown in the first embodiment.

According to this configuration, the vapor deposition rate Y1 of the first evaporation source 3 can be calculated by measuring the mixed vapor deposition rate Y1 by the first film thickness gauge 7a, and the mixed vaporization can be measured by the second film thickness gauge 7b. The plating rate Y2, that is, the vapor deposition rate X2 of the second evaporation source 4 can be calculated. Therefore, the vacuum vapor deposition apparatus 1 of the present embodiment contributes to the individual calculation of the vapor deposition rate X1 of the first and second evaporation sources 3, 4. In either of X2, the vapor deposition rate of each material can be properly controlled in accordance with the material composition required for the film to be produced.

Further, according to the vacuum vapor deposition apparatus 1 of the present embodiment, since the opening degrees of the valves 36 and 46 provided in the first and second evaporation sources 3 and 4 are respectively controlled, the first adjustment can be made more quickly than when the temperatures are controlled. And the vapor deposition rate of the second evaporation sources 3 and 4.

Further, the present invention is not limited to the above embodiment, and various modifications can be made. In the above embodiment, an example in which two types of vapor deposition materials are evaporated by two evaporation sources will be described. However, for example, three types of evaporation may be used to make three types of evaporation. The plating material evaporates. At this time, the vapor deposition rate of each evaporation source can be calculated individually by measuring the mixed vapor deposition rate using the third film thickness meter and obtaining the solution of the cubic equations of the three equations.

This case claims priority based on Japanese Patent Application No. 2012-013969, and its contents and drawings are cited.

1‧‧‧Vacuum evaporation device

2‧‧‧Extruded body

3‧‧‧1st evaporation source

4‧‧‧2nd evaporation source

5‧‧‧Cylinder

6‧‧‧vacuum chamber

7a‧‧‧1st film thickness meter

7b‧‧‧2nd film thickness meter

8‧‧‧Control device

30‧‧‧A vapor deposition material

31, 41‧‧‧ heating container

32, 42‧‧‧ evaporation source heater

33, 43‧‧‧ power supply

34, 44‧‧‧ thermometer

35, 45‧‧‧ Evaporation source temperature controller

40‧‧‧Another evaporation material

51‧‧‧Open face

52‧‧‧ bottom

53‧‧‧heater

54‧‧‧Power supply

55‧‧‧Temperature Sensor

56‧‧‧Cylinder temperature controller

61‧‧‧Vacuum pump

81‧‧‧Deposition rate control department

82a, 82b‧‧‧ evaporation rate memory

83a, 83b‧‧‧ Mixed evaporation speed memory

84a, 84b‧‧‧ reach ratio memory department

85, 85a, 85b‧‧‧Measurement Department

86‧‧‧Display Department

A1‧‧‧Set evaporation rate of the first evaporation source

A2‧‧‧Set evaporation rate of the second evaporation source

The ratio of the amount of vapor deposition material of a B1‧‧‧2nd film thickness meter

B2‧‧‧1st thickness gauge of another vapor deposition material

X1‧‧‧ evaporation rate of the first evaporation source

X2‧‧‧ evaporation rate of the second evaporation source

Hybrid evaporation rate measured by Y1‧‧‧1st film thickness meter

Mixed vapor deposition rate measured by Y2‧‧‧2nd film thickness meter

Claims (11)

A vacuum evaporation apparatus for vapor-depositing a plurality of vapor deposition materials to a vapor-deposited body, comprising: a first evaporation source to evaporate one evaporation material; and a second evaporation source to evaporate another evaporation material a vapor deposition rate control unit that controls the operation of the first and second evaporation sources, and a vapor deposition rate storage unit that stores the preset vapor deposition rates A1 and A2 of the first and second evaporation sources set in advance; a film thickness gauge and a second film thickness meter, wherein the vapor deposition materials evaporated from the first and second evaporation sources are adhered, and the vapor deposition rates Y1 and Y2 of the vapor deposition materials are measured from the film thickness, and the film thickness is measured. The first film thickness gauge is disposed at a position closer to the first evaporation source than to the second evaporation source, and the second film thickness is disposed closer to the second evaporation source than to the first evaporation source; The vapor deposition rate memory unit stores the mixed vapor deposition rates Y1 and Y2 measured by the two film thickness gauges; the arrival amount ratio memory unit stores the memory from the first evaporation source to the two film thicknesses per unit time. In the vapor deposition material, the second film thickness gauge is the vapor deposition material based on the first film thickness. The arrival amount ratio B1 and the other vapor deposition material from the second evaporation source to the two film thicknesses per unit time are the first film thickness relative to the second film thickness meter a ratio of arrival amount of the vapor deposition material B2; and a measuring portion, from the mixed vapor deposition speeds Y1 and Y2 stored in the mixed vapor deposition speed memory portion, and the ratio of the arrival amount of the arrival amount to the memory portion B1, B2 Calculating the vapor deposition rates X1 and X2 of the first and second evaporation sources, respectively; and the vapor deposition rate control unit controls at least one of the first and second evaporation sources, respectively, and the measurement unit At least one of the calculated vapor deposition rates X1 and X2 of the first and second evaporation sources coincides with at least one of the set vapor deposition rates A1 and A2 stored in the set vapor deposition rate storage unit. The vacuum vapor deposition device of claim 1, wherein the measuring portion is subtracted from the mixed vapor deposition speeds Y1 and Y2 stored in the mixed vapor deposition rate storage unit, and is memorized from the memory at the set evaporation rate. The set vapor deposition rates A2 and A1 are multiplied by the above-mentioned memory in the arrival amount ratio. The amount of arrival of the memory unit is calculated from the values obtained by B2 and B1, and the vapor deposition rates X1 and X2 of the first and second evaporation sources are calculated, respectively. The vacuum vapor deposition apparatus according to claim 1 or 2, wherein the first vapor deposition rates C1 and C2 measured by the first and second film thickness gauges when the first evaporation source is operated are used in advance, The value obtained by first measuring the second vapor deposition rates D1 and D2 of the first and second film thickness gauges when the second evaporation source is operated in advance is determined as the first virtual mixed vapor deposition rate E1. E2, in advance, when the first and second evaporation sources are operated, the first and second thickness gauges are respectively measured as the second virtual mixed vapor deposition rates F1 and F2, and the measuring unit The mixed vapor deposition rates Y1 and Y2 are multiplied by the vapor deposition rate correction coefficients K1 and K2, respectively, to calculate the corrected mixed vapor deposition speeds Y'1, Y'2, and the corrected mixed vapor deposition speeds Y'1, Y' are respectively used. 2, the mixed vapor deposition rates Y1 and Y2 are replaced, and the correction coefficients K1 and K2 are values obtained by dividing the first virtual mixed vapor deposition rates E1 and E2 by the second virtual mixed vapor deposition rates F1 and F2, respectively. The vacuum vapor deposition apparatus according to claim 3, wherein the amount of arrival is stored in advance in the memory unit in the amount of arrival ratios B1 and B2, and the measurement unit sets the vapor deposition rate correction coefficients K1 and K2 in advance. A vacuum vapor deposition apparatus according to claim 1 or 2, further comprising: a display unit that displays vapor deposition rates X1 and X2 of the first and second evaporation sources calculated by the measurement unit. The vacuum vapor deposition apparatus according to claim 1 or 2, wherein the vapor deposition rate control unit controls the temperatures of the first and second evaporation sources, respectively. The vacuum vapor deposition apparatus according to claim 1 or 2, wherein the vapor deposition rate control unit controls the opening degree of the valve to change an opening area of each of the evaporation openings of the first and second evaporation sources. The vacuum vapor deposition apparatus according to claim 1 or 2, wherein the distance between the second evaporation source and the second film thickness gauge is shorter than a distance between the first evaporation source and the first film thickness. The vacuum vapor deposition apparatus according to claim 1 or 2, further comprising: a cylindrical flow path having an opening in the vicinity of the evaporation opening of the second evaporation source and in the vicinity of the second film thickness meter. A vacuum vapor deposition apparatus according to claim 9 is characterized in that a cylindrical flow path is provided, and an opening is formed in the vicinity of the evaporation opening of the first evaporation source and in the vicinity of the first film thickness gauge. A vacuum evaporation apparatus according to claim 1 or 2, further comprising: a cylindrical body, A space surrounding the first and second evaporation sources and the vapor-deposited body has an opening surface on the vapor-deposited body side.