TW201344967A - LED electrode contact structure - Google Patents

Abstract

The present invention is an LED electrode contact structure applied to an LED. The LED comprises a plurality of sequentially stacked N type electrode, an N type semiconductor layer, a light emitting layer and a P type semiconductor layer, a reflective layer, a stress relief layer, a bonding layer, a permanent substrate and a P type electrode. The N type semiconductor layer is formed on an irregular surface, wherein the N type semiconductor layer is formed into a plurality of contact platform. The plurality of contact platform with a pattern distribution is disposed on the N type semiconductor layer, and the irregular surface is formed on the N type semiconductor layer without the plurality of contact regions. The plurality of N type electrodes are formed on the plurality of contact platforms of the present invention according to the plurality of contact stages to provide a planar interface and allow the plurality of N type electrode to form on the plurality of contacts on stage without causing a void, maintain good electrical contact simultaneously avoid the molecular spin key confinement carrier, further to improve the luminous efficiency.

Description

Electrode contact structure of light emitting diode

The present invention relates to a light-emitting diode, and more particularly to an electrode contact structure of a light-emitting diode.

Light Emitting Diode (LED), which has the characteristics of lightness, thinness, power saving, etc., has been widely used in lighting, traffic signs, advertising signs, etc., which is mainly composed of multiple epitaxial stacking of semiconductor materials. For example, a blue light-emitting diode is mainly composed of a gallium nitride-based (GaN-based) epitaxial film.

Referring to FIG. 1A and FIG. 1B, a conventional vertical light-emitting diode includes an N-type semiconductor layer 1, a light-emitting layer 2 and a P-type semiconductor layer 3 which constitute a sandwich structure. A Mirror layer, a tension release layer, a bonding layer 6, a germanium substrate 7 and a P-type electrode 8 are sequentially disposed under the P-type semiconductor layer 3, and the N The surface of the semiconductor layer 1 may be roughened to increase the light emission rate, and an N-type electrode 9 is provided, whereby the N-type semiconductor layer 1 is applied after the N-type electrode 9 and the P-type electrode 8 are applied with a voltage. Electrons are provided, and the P-type semiconductor layer 3 provides a hole, and the electrons can be combined with the light-emitting layer 2 to generate light.

In order to increase the light extraction rate, the surface of the N-type semiconductor layer 1 is roughened to form an irregular surface 1A, and the N-type electrode 9 is formed directly on the irregular surface 1A, and the N-type electrode 9 is generally In order to form a thin film process such as sputtering or vapor deposition, a void 1B is formed between the N-type electrode 9 and the N-type semiconductor layer 1 at a blind spot of the irregular surface 1A during the film processing. Void), which not only causes poor contact, but also increases the contact resistance, and when the irregular surface is made, it is easy to cause the molecules to generate a spin key and restrain the carrier, resulting in low luminous efficiency.

The main object of the present invention is to disclose an electrode contact structure of a light-emitting diode, which can avoid a gap between the electrode and the semiconductor to cause contact failure, thereby improving luminous efficiency.

The invention relates to an electrode contact structure of a light-emitting diode, which is applied to a light-emitting diode, wherein the light-emitting diode comprises a plurality of N-type electrodes, an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor which are sequentially stacked. a layer, a reflective layer, a stress relief layer, a bonding layer, a permanent substrate and a P-type electrode, and the N-type semiconductor layer is formed with an irregular surface.

The technical feature of the present invention is that a plurality of contact platforms are formed on the N-type semiconductor layer, and the plurality of contact pads are disposed on the N-type semiconductor layer with a pattern distribution, and the irregular surface is formed on the N-type semiconductor layer. A plurality of regions contacting the platform, and the plurality of N-type electrodes are respectively formed on the plurality of contact platforms.

According to the present invention, the plurality of N-type electrodes are formed on the plurality of contact platforms to provide a flat interface by the plurality of contact platforms, and when the N-type electrodes are formed by a thin film process, voids are not formed, thereby allowing the The N-type electrode maintains good electrical contact with the contact platform, and at the same time, it can avoid causing the molecules to generate a spin-bond and restrain the carrier when the irregular surface is produced, thereby improving the luminous efficiency.

The detailed description of the present invention and the technical description of the present invention are further illustrated by the accompanying drawings, but it should be understood that these embodiments are merely illustrative and not to be construed as limiting.

Please refer to FIG. 2 again, which is an embodiment of the present invention. The present invention is an electrode contact structure of a light-emitting diode, which is applied to a light-emitting diode 100, and the light-emitting diode 100 is sequentially stacked. a plurality of N-type electrodes 10, an N-type semiconductor layer 20, a light-emitting layer 30, a P-type semiconductor layer 40, a reflective layer 50, a stress relief layer 60, a bonding layer 70, a permanent substrate 80 and a P-type electrode 90, and the N-type semiconductor layer 20 is formed with an irregular surface 201.

The N-type semiconductor layer 20 integrally forms a plurality of contact platforms 202. The plurality of contact pads 202 are disposed on the N-type semiconductor layer 20 with a pattern distribution, and the irregular surface 201 is formed on the N-type semiconductor layer. 20 does not have the area of the plurality of contact platforms 202, and the plurality of N-type electrodes 10 are respectively formed on the plurality of contact platforms 202.

Please refer to both FIG. 3A and FIG. 3C for a schematic view of the manufacturing of the present invention.

First, as shown in FIG. 3A, the present invention is an N-type semiconductor layer 20, a light-emitting layer 30, a P-type semiconductor layer 40, a reflective layer 50, and a stress relief layer 60 which are sequentially stacked. A bonding layer 70, a permanent substrate 80 and a P-type electrode 90, and the N-type semiconductor layer 20 may include a first N-type semiconductor layer 21 and a second N-type semiconductor layer 22. And wherein the stress relief layer 60 may be made of a group selected from the group consisting of titanium, tungsten, platinum, nickel, aluminum, and chromium. The bonding layer 70 may be made of any one selected from the group consisting of a gold-tin alloy, a gold-indium alloy, and a gold-lead alloy. The permanent substrate 80 may be made of any one selected from the group consisting of a tantalum substrate, a copper substrate, a copper tungsten substrate, an aluminum nitride substrate, and a titanium nitride substrate. The reflective layer 50 may be made of a group selected from the group consisting of aluminum, nickel, silver, and titanium.

Next, as shown in FIG. 3B, a patterned complex N-type electrode 10 is formed on the N-type semiconductor layer 20 (that is, on the first N-type semiconductor layer 21) by a thin film process such as vapor deposition.

Finally, as shown in FIG. 3C, an irregular surface 201 is formed on the N-type semiconductor layer 20 (that is, in the first N-type semiconductor layer 21) by using a roughening process, and the irregular surface 201 can utilize physical The method is formed by a plasma impact or the like, and the complex contact platform 202 is formed on the N-type semiconductor layer 20 (that is, on the first N-type semiconductor layer 21) by masking the plurality of N-type electrodes 10, that is, The structure of the present invention is completed.

As described above, the present invention allows the complex N-type electrode 10 to be formed on the complex contact platform 202 to be in contact with the N-type semiconductor layer 20. Since the plurality of contact pads 202 have a flat interface, the thin-film contact process is used to form the N. When the electrode 10 is formed, voids are not formed, so that the structure of the present invention can ensure good electrical contact between the N-type electrode 10 and the contact platform 202, and at the same time, it is easy to cause molecular generation when the irregular surface 201 is fabricated. The key is locked and the carrier is restrained to improve the luminous efficiency.

The above are only the preferred embodiments of the present invention and are not intended to limit the scope of the embodiments of the present invention. That is, the equivalent changes and modifications made by the scope of the patent application of the present invention are covered by the scope of the invention.

Conventional knowledge

1. . . N-type semiconductor layer

1A. . . Irregular surface

1B. . . Void

2. . . Luminous layer

3. . . P-type semiconductor layer

4. . . Reflective layer

5. . . Stress relief layer

6. . . Bonding layer

7. . .矽 substrate

8. . . P-type electrode

9. . . N-type electrode

this invention

100. . . Light-emitting diode

10. . . N-type electrode

20. . . N-type semiconductor layer

201. . . Irregular surface

202. . . Contact platform

twenty one. . . First N-type semiconductor layer

twenty two. . . Second N-type semiconductor layer

30. . . Luminous layer

40. . . P-type semiconductor layer

50. . . Reflective layer

60. . . Stress relief layer

70. . . Bonding layer

80. . . Permanent substrate

90. . . P-type electrode

FIG. 1A is a structural diagram of a conventional light emitting diode.

FIG. 1B is a diagram showing the structure of a conventional light-emitting diode void.

Fig. 2 is a structural view of a diode of the present invention.

3A-3C are flow charts showing the fabrication of the diode structure of the present invention.

100. . . Light-emitting diode

10. . . N-type electrode

20. . . N-type semiconductor layer

201. . . Irregular surface

202. . . Contact platform

twenty one. . . First N-type semiconductor layer

twenty two. . . Second N-type semiconductor layer

30. . . Luminous layer

40. . . P-type semiconductor layer

50. . . Reflective layer

60. . . Stress relief layer

70. . . Bonding layer

80. . . Permanent substrate

90. . . P-type electrode

Claims (6)

An electrode contact structure of a light-emitting diode is applied to a light-emitting diode comprising a plurality of N-type electrodes, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, and a plurality of sequentially stacked semiconductor electrodes a reflective layer, a stress relief layer, a bonding layer, a permanent substrate and a P-type electrode, and the N-type semiconductor layer is formed with an irregular surface, wherein:
The N-type semiconductor layer forms a plurality of contact platforms, and the plurality of contact pads are disposed on the N-type semiconductor layer with a pattern distribution, and the irregular surface is formed on a region where the N-type semiconductor layer does not have the complex contact platform, and the A plurality of N-type electrodes are respectively formed on the plurality of contact platforms. The electrode contact structure of the light-emitting diode of claim 1, wherein the N-type semiconductor layer comprises a first N-type semiconductor layer and a second N-type semiconductor layer, and the plurality of contact platforms are formed on the first N On the semiconductor layer. The electrode contact structure of the light-emitting diode of claim 1, wherein the stress relief layer is made of a group selected from the group consisting of titanium, tungsten, platinum, nickel, aluminum and chromium. The electrode contact structure of the light-emitting diode of claim 1, wherein the bonding layer is made of any one selected from the group consisting of a gold-tin alloy, a gold-indium alloy, and a gold-lead alloy. The electrode contact structure of the light-emitting diode according to the first aspect of the invention, wherein the permanent substrate is made of any one selected from the group consisting of a germanium substrate, a copper substrate, a copper tungsten substrate, an aluminum nitride substrate, and a titanium nitride substrate. The electrode contact structure of the light-emitting diode of claim 1, wherein the reflective layer is made of a group selected from the group consisting of aluminum, nickel, silver and titanium.