TW201343549A - Porous silicon particles and porous silicon-composite particles - Google Patents

Porous silicon particles and porous silicon-composite particles Download PDF

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TW201343549A
TW201343549A TW102110069A TW102110069A TW201343549A TW 201343549 A TW201343549 A TW 201343549A TW 102110069 A TW102110069 A TW 102110069A TW 102110069 A TW102110069 A TW 102110069A TW 201343549 A TW201343549 A TW 201343549A
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ruthenium
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Hirokazu Yoshida
Haruhiko Segawa
Toshio Tani
Takeshi Nishimura
Hidemi Kato
Takeshi Wada
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Tohoku Techno Arch Co Ltd
Furukawa Electric Co Ltd
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Abstract

The present invention addresses the problem of obtaining porous silicon particles and porous silicon-composite particles that are suitable for use, for example, in a negative-electrode material for a lithium-ion battery that has high capacity and good cycle characteristics. In order to solve said problem, the present invention uses porous silicon particles (1), each of which comprises a plurality of silicon microparticles (3) joined together with a contiguous void and is characterized in that: the mean (x) of the particle diameters or rod diameters of said silicon microparticles is between 2 nm and 2 μm, inclusive; the standard deviation (sigma) of the particle diameters or rod diameters of the silicon microparticles is between 1 and 500 nm, inclusive; and the quotient (σ/x) of said standard deviation σ and mean (x) is between 0.01 and 0.5, inclusive. Alternatively, porous silicon-composite particles, each of which comprises a plurality of silicon microparticles and a plurality of silicon-compound particles joined together with a contiguous void and is characterized by having characteristics similar to the above, may also be used.

Description

多孔質矽粒子及多孔質矽複合體粒子 Porous cerium particles and porous cerium composite particles 技術領域 Technical field

本發明係有關於一種鋰離子電池用之負極等使用之多孔質矽粒子。本發明之多孔質矽粒子可用於電容、鋰離子電容、太陽電池用矽半導體。 The present invention relates to a porous ruthenium particle used for a negative electrode or the like for a lithium ion battery. The porous tantalum particles of the present invention can be used for capacitors, lithium ion capacitors, and tantalum semiconductors for solar cells.

背景技術 Background technique

以往,使用天然石墨、人造石墨、非晶質碳、中間相碳等各種碳系材料、鈦酸鋰、或錫合金等作為負極活性物質之鋰離子電池已實用化。又,進行的是摻混負極活性物質、碳黑等之導電助劑及樹脂之黏結劑且調製漿液,塗布在銅箔上、乾燥,且形成負極。 Conventionally, lithium ion batteries using various carbon-based materials such as natural graphite, artificial graphite, amorphous carbon, and mesocarbon carbon, lithium titanate, or tin alloy as negative electrode active materials have been put into practical use. Further, a conductive agent such as a negative electrode active material or carbon black and a binder of a resin are blended, and a slurry is prepared, coated on a copper foil, dried, and a negative electrode is formed.

另一方面,以高容量化為目標,已開發鋰化合物使用理論容量大之金屬或合金,特別是矽及其合金作為負極活性物質之鋰離子電池用負極。但是,吸附鋰離子之矽,相對於吸附前之矽,體積膨脹到大約4倍,因此使用矽作為負極活性物質之負極在充放電循環時反覆膨脹及收縮。因此,有產生負極活性物質之剝離等,且與由習知碳系活性物質構成之負極比較,壽命極短之問題。 On the other hand, in order to increase the capacity, a lithium compound has been developed using a metal or an alloy having a large theoretical capacity, and in particular, a negative electrode for a lithium ion battery using ruthenium and an alloy thereof as a negative electrode active material. However, since the lithium ion is adsorbed and the volume is expanded by about 4 times with respect to the enthalpy before the adsorption, the negative electrode using ruthenium as the negative electrode active material re-expands and contracts during the charge and discharge cycle. Therefore, there is a problem in that the negative electrode active material is peeled off or the like, and the life is extremely short as compared with the negative electrode composed of a conventional carbon-based active material.

作為使用矽之負極之習知製造方法,將矽機械地 粉碎至數微米尺寸,且藉將之塗布至導電性材料作成鋰電池用負極材料使用之技術(例如,參照專利文獻1)是已知的。 As a conventional manufacturing method using a negative electrode of ruthenium, A technique of pulverizing to a size of several micrometers and applying it to a conductive material to form a negative electrode material for a lithium battery (for example, refer to Patent Document 1) is known.

此外,作為使用矽之負極之習知製造方法包括對矽基板實施陽極氧化且形成狹縫等之溝之方法,在帶狀之塊金屬中結晶微細之矽之方法(例如,參照專利文獻2)等。 In addition, a conventional method for producing a negative electrode using ruthenium includes a method of anodicizing a ruthenium substrate and forming a groove such as a slit, and a method of crystallizing fine ruthenium in a strip-shaped metal (for example, refer to Patent Document 2) Wait.

又,在導電性基板上堆積聚苯乙烯或PMMA等之高分子粒子,且在該高分子粒子上藉鍍金施加與鋰合金化之金屬後,藉移除高分子粒子製作金屬之多孔體(多孔質體)之技術(例如,參照專利文獻3)亦是已知的。 Further, polymer particles such as polystyrene or PMMA are deposited on the conductive substrate, and a metal which is alloyed with lithium is applied to the polymer particles by gold plating, and then a porous body of metal is removed by removing the polymer particles (porous The technique of the plastid (for example, refer to Patent Document 3) is also known.

又,使用相當於本發明之中間程序物之Si中間合金者作為鋰電池用負極材料之技術(例如,參照專利文獻4、5)是已知的。 Further, a technique of using a Si intermediate alloy corresponding to the intermediate program of the present invention as a negative electrode material for a lithium battery (for example, refer to Patent Documents 4 and 5) is known.

又,將其進行熱處理作成鋰電池用負極材料使用之技術(例如,參照專利文獻6)是已知的。 Moreover, it is known to heat-treat it as a negative electrode material for lithium batteries (for example, refer patent document 6).

又,與該技術相關地,由應用急冷凝固技術製作之Si與元素M之Si合金,藉酸或鹼完全溶出去除元素M之技術(例如,參照專利文獻7)是已知的。 Further, in connection with this technique, a technique of completely removing the element M by acid or alkali by a Si alloy of Si and element M which is produced by a rapid solidification technique is known (for example, refer to Patent Document 7).

此外,藉氟酸、硝酸蝕刻金屬矽或矽合金之技術(例如,參照專利文獻8、9、10)亦是已知的。 Further, a technique of etching a metal ruthenium or a ruthenium alloy by hydrofluoric acid or nitric acid (for example, refer to Patent Documents 8, 9, 10) is also known.

先前技術文獻 Prior technical literature 專利文獻 Patent literature

專利文獻1:日本專利4172443號公報 Patent Document 1: Japanese Patent No. 4172443

專利文獻2:日本特開2008-135364號公報 Patent Document 2: Japanese Laid-Open Patent Publication No. 2008-135364

專利文獻3:日本特開2006-260886號公報 Patent Document 3: Japanese Laid-Open Patent Publication No. 2006-260886

專利文獻4:日本特開2000-149937號公報 Patent Document 4: Japanese Laid-Open Patent Publication No. 2000-149937

專利文獻5:日本特開2004-362895號公報 Patent Document 5: Japanese Patent Laid-Open Publication No. 2004-362895

專利文獻6:日本特開2009-032644號公報 Patent Document 6: JP-A-2009-032644

專利文獻7:日本專利第3827642號公報 Patent Document 7: Japanese Patent No. 3876642

專利文獻8:美國專利申請案公開第2006/0251561號說明書 Patent Document 8: US Patent Application Publication No. 2006/0251561

專利文獻9:美國專利申請案公開第2009/0186267號說明書 Patent Document 9: US Patent Application Publication No. 2009/0186267

專利文獻10:美國專利申請案公開第2012/0129049號說明書 Patent Document 10: US Patent Application Publication No. 2012/0129049

發明概要 Summary of invention

但是,專利文獻1之技術使用粉碎單晶矽得到之數微米尺寸之單結晶,且矽原子具有層狀或三維網目構造之板或粉末作為負極活性物質。此外,為賦予導電性,使用矽化合物(由矽碳化物、矽氰化物、矽氮化物、矽氧化物、矽硼化物、矽硼氧化物、矽硼氮化物、矽氮氧化物、矽鹼金屬合金、矽鹼土族金屬合金、矽過渡金屬合金構成之矽化合物群中之一種以上)。但是,矽在充放電時之體積變化大,因此在專利文獻1中記載之負極活性物質在充放電時,產生負極活性物質之微粉化與負極活性物質之剝離、負極龜裂之發生、負極活性物質間之導電性之降低等且容量降低。因此,有循環特性不佳,且二次電池之壽命短之問題。 特別地,期待作為負極材料之實用化之矽充放電時之體積變化大,因此有容易產生破裂,且充放電循環特性不佳之問題。 However, the technique of Patent Document 1 uses a single crystal of several micrometers size obtained by pulverizing a single crystal ruthenium, and a plate or powder having a layered or three-dimensional network structure as a negative electrode active material. Further, in order to impart conductivity, a ruthenium compound (from ruthenium carbide, ruthenium cyanide, ruthenium nitride, ruthenium oxide, osmium boride, lanthanum borohydride, lanthanum borohydride, lanthanum oxynitride, ruthenium alkali metal) is used. One or more of the ruthenium compound group composed of an alloy, a bismuth base metal alloy, or a ruthenium transition metal alloy. However, in the case of charge and discharge, the negative electrode active material described in Patent Document 1 generates micronization of the negative electrode active material, peeling of the negative electrode active material, occurrence of negative electrode cracking, and negative electrode activity. The conductivity between the substances is lowered, and the capacity is lowered. Therefore, there is a problem that the cycle characteristics are poor and the life of the secondary battery is short. In particular, it is expected that the volume change during charging and discharging of the negative electrode material is large, and therefore there is a problem that cracking easily occurs and the charge and discharge cycle characteristics are not good.

又,專利文獻2之技術係塗布、乾燥負極活性物質、導電助劑及黏結劑之漿液,且形成負極。如此之習知負極係藉導電性低之黏著劑黏著負極活性物質與集電體,且樹脂之使用量必須抑制至最小限度以使內部電阻不會變大,結合力弱。矽充放電時之體積變化大,因此在專利文獻2之技術中,負極活性物質在充放電時,產生負極活性物質之微粉化與負極活性物質之剝離、負極龜裂之發生、負極活性物質間之導電性之降低等且容量降低。因此,有循環特性不佳,且二次電池之壽命短之問題。 Further, in the technique of Patent Document 2, a slurry of a negative electrode active material, a conductive auxiliary agent, and a binder is applied and dried, and a negative electrode is formed. As described above, the negative electrode is adhered to the negative electrode active material and the current collector by an adhesive having low conductivity, and the amount of the resin used must be kept to a minimum so that the internal resistance does not become large and the bonding strength is weak. In the technique of Patent Document 2, when the negative electrode active material is charged and discharged, the micronization of the negative electrode active material and the peeling of the negative electrode active material, the occurrence of the negative electrode crack, and the negative electrode active material occur. The conductivity is lowered and the capacity is lowered. Therefore, there is a problem that the cycle characteristics are poor and the life of the secondary battery is short.

又,專利文獻3之技術係在導電性基板上堆積聚苯乙烯或PMMA等之高分子粒子,且在該高分子粒子上藉鍍金施加與鋰合金化之金屬後,可藉移除高分子粒子製作金屬之多孔體(多孔質體)。但是,在製作Si之多孔質體方面,有在苯乙烯或PMMA等之高分子粒子上鍍敷Si非常困難,且無法工業性地適用之問題。 Further, in the technique of Patent Document 3, polymer particles such as polystyrene or PMMA are deposited on a conductive substrate, and after the metal is alloyed with lithium by gold plating on the polymer particles, the polymer particles can be removed. A porous body (porous body) of metal is produced. However, in the production of a porous body of Si, it is extremely difficult to apply Si to polymer particles such as styrene or PMMA, and it is not industrially applicable.

又,專利文獻4之技術之特徵在於包含以凝固速度為100℃/秒以上之方式使構成合金粒子之原料之熔融物冷卻且凝固,形成含有Si相粒及至少部份地包圍其之含Si固溶體或金屬間化合物之相之合金的步驟,製造非水電解質二次電池用負極材料之方法。但是,在該方法中,在Li反應方面,必須擴散移動通過包括之含Si固溶體內且缺乏 反應性,又,由可有助於充放電之Si含量少方面來看,無法達到實用化。 Further, the technique of Patent Document 4 is characterized in that the melt of the raw material constituting the alloy particles is cooled and solidified so as to have a solidification rate of 100 ° C /sec or more to form Si-containing particles and at least partially surround them. A method of producing an anode material for a non-aqueous electrolyte secondary battery by a step of alloying a phase of a solid solution or an intermetallic compound. However, in this method, in terms of Li reaction, diffusion must be carried out through the inclusion of the Si-containing solid solution and lacking The reactivity is further inconvenient in terms of a small amount of Si which contributes to charge and discharge.

又,專利文獻5之技術係藉含有矽(矽之含有率為22質量%以上且60質量%以下)、銅、鎳及鈷之任1種或2種以上之金屬元素之矽合金粉末構成。由於藉單輥法或噴霧法合成該矽合金粉末,故可依據鋰離子等之吸附、放出之體積變化抑制微粉化。但是,在該方法中,在Li反應方面,必須擴散移動通過包括之含Si固溶體內且缺乏反應性,又,由可有助於充放電之Si含量少方面來看,無法達到實用化。 In addition, the technique of the patent document 5 is comprised by the bismuth alloy powder containing the metal element of the 1 or 2 or more types of copper, nickel, and cobalt. Since the niobium alloy powder is synthesized by a single roll method or a spray method, it is possible to suppress micronization depending on the volume change of adsorption or release of lithium ions or the like. However, in this method, in terms of the Li reaction, it is necessary to diffusely move through the Si-containing solid solution and lack reactivity, and in view of the fact that the Si content which contributes to charge and discharge is small, it is not practical.

又,專利文獻6之技術包含急冷含有Si及選自於Co、Ni、Ag、Sn、Al、Fe、Zr、Cr、Cu、P、Bi、V、Mn、Nb、Mo、In及稀土族元素之1種或2種以上之元素之熔融合金,得到Si基非晶質合金之步驟;及熱處理得到之Si基非晶質合金之步驟。藉熱處理得到之Si基非晶質合金,析出數十nm至300nm左右之微細結晶性之Si核。但是,在該方法中,在Li反應方面,必須擴散移動通過包括之含Si固溶體內且缺乏反應性,又,由可有助於充放電之Si含量少方面來看,無法達到實用化。 Further, the technique of Patent Document 6 includes quenching containing Si and selected from the group consisting of Co, Ni, Ag, Sn, Al, Fe, Zr, Cr, Cu, P, Bi, V, Mn, Nb, Mo, In, and rare earth elements. a step of obtaining a Si-based amorphous alloy by a molten alloy of one or more elements, and a step of heat-treating the Si-based amorphous alloy. The Si-based amorphous alloy obtained by the heat treatment precipitates a fine crystal Si core of about several tens of nanometers to about 300 nm. However, in this method, in terms of the Li reaction, it is necessary to diffusely move through the Si-containing solid solution and lack reactivity, and in view of the fact that the Si content which contributes to charge and discharge is small, it is not practical.

又,專利文獻7之技術係適應製造非晶質帶或微粉末,且冷卻速度全部在104K/秒以上使之凝固。就一般合金之凝固而言,得到一面1次樹狀突成長一面2次樹狀突成長之樹枝狀結晶。在特殊合金系(Cu-Mg系、Ni-Ti系等)中,可在104K/秒以上形成非晶質金屬,但是在其他系(例如 Si-Ni系)中,即使冷卻速度全部在104K/秒以上使之凝固亦無法得到非晶質金屬,且形成結晶相。形成該結晶相時之結晶尺寸取決於冷卻速度(R:K/秒)與樹枝狀支臂間距(DAS:μm)之關係。 Further, the technique of Patent Document 7 is adapted to produce an amorphous ribbon or a fine powder, and the cooling rate is all set at 10 4 K/sec or more to solidify. In the solidification of a general alloy, dendritic crystals in which the dendrites grow once and twice, and the dendrites grow. In a special alloy system (Cu-Mg system, Ni-Ti system, etc.), an amorphous metal can be formed at 10 4 K/sec or more, but in other systems (for example, Si-Ni system), even if the cooling rate is all more than 10 4 K / sec was solidified amorphous metal also can not be obtained, and the formation of crystalline phases. The crystal size at which the crystal phase is formed depends on the relationship between the cooling rate (R: K/sec) and the dendritic arm spacing (DAS: μm).

DAS=A×RB(一般而言,A:40至100,B:-0.3至-0.4) DAS=A×R B (generally, A: 40 to 100, B: -0.3 to -0.4)

因此,具有結晶相時,例如A:60,B:-0.35時,在R:104K/秒DAS為1μm。結晶相亦取決於該尺寸,因此無法得到10nm等之微細結晶相。由該等理由可知,Si-Ni系等之材料無法單獨藉該急冷凝固技術得到由微細結晶相構成之多孔質。 Therefore, when having a crystal phase, for example, A: 60, B: -0.35, D is 1 μm at R: 10 4 K/sec. The crystal phase also depends on the size, so that a fine crystal phase of 10 nm or the like cannot be obtained. For these reasons, it is known that a material such as Si-Ni is not able to obtain a porous material composed of a fine crystal phase by the rapid solidification technique alone.

又,專利文獻8、9之技術係使用氟酸、硝酸蝕刻金屬矽在表面作成微細空孔。但是,BET比表面積為140至400m2/g時由充放電之回應性來看,有Si負極活性物質不充足之問題。又,藉蝕刻形成之空孔非均一地分散,且由粒子表面至中心,空孔非均一地存在。因此,有伴隨充放電時之體積膨脹收縮,在粒子內部微粉化增加,壽命短之問題。 Further, in the techniques of Patent Documents 8 and 9, the metal crucible is etched using hydrofluoric acid or nitric acid to form fine pores on the surface. However, when the BET specific surface area is from 140 to 400 m 2 /g, there is a problem that the Si negative electrode active material is insufficient from the viewpoint of charge and discharge responsiveness. Further, the voids formed by the etching are non-uniformly dispersed, and the pores are non-uniformly present from the surface to the center of the particles. Therefore, there is a problem that the volume expansion and contraction at the time of charge and discharge increases the micronization inside the particles and the life is short.

又,專利文獻10之技術係在使熔融狀態之矽合金(含矽非晶質合金)急冷凝固後,使用氟酸或硝酸蝕刻且回收矽粒子。這可在藉使用過共晶組成凝固時優先地結晶矽粒子,且藉使冷卻速度增大(100K/s),可在合金中作成微細之粒狀、板狀之初晶矽。又,在結晶成長中樹狀突之間留下Al-Si共晶組織時,在後來之蝕刻處理亦會發生形成空隙(孔隙)之情形。但是,由該急冷凝固及機構無法作成具有共連續 構造之海綿狀之矽。 Further, in the technique of Patent Document 10, after the molten alloy (cerium-containing amorphous alloy) is rapidly solidified, it is etched using hydrofluoric acid or nitric acid to recover ruthenium particles. This preferentially crystallizes the ruthenium particles upon solidification by using the eutectic composition, and by increasing the cooling rate (100 K/s), a fine granular or plate-like primary crystal ruthenium can be formed in the alloy. Further, when an Al-Si eutectic structure is left between the dendrites during crystal growth, voids (pores) may be formed in the subsequent etching treatment. However, the rapid solidification and the mechanism cannot be made to have a continuous continuity. The spongy shape of the structure.

本發明係鑑於前述問題而作成者,且其目的在於得到適合實現高容量及良好循環特徵之鋰離子電池用之負極材料之多孔質矽粒子。 The present invention has been made in view of the above problems, and an object thereof is to obtain porous tantalum particles suitable for a negative electrode material for a lithium ion battery having high capacity and good cycle characteristics.

本發明人為達成上述目的專心檢討,結果發現藉由矽合金之離相分解(在來自矽合金之熔融液內之矽之析出)及脫成分蝕刻(dealloying),可得到微細多孔質之矽。在來自矽合金之熔融液內之矽之析出係在高溫之熔融金屬中進行,因此在藉脫成分蝕刻(dealloying)得到之多孔質矽粒子之表層部及內部不易產生一次粒徑大之分布。這是以熔融金屬作為溶劑之擴散,且矽合金中之去除原子取代為溶劑原子時,藉溶劑中之對流等直接由擴散界面排出,且擴散界面經常存在預定組成之熔融金屬,因此存在一定濃度梯度。因此,矽合金內之擴散係以一定之速度進行,故可以一定速度供給有助於離相分解之矽原子,因此矽微粒子之尺寸為一定。 In order to achieve the above object, the present inventors have intensively reviewed and found that a fine porous material can be obtained by phase separation of a bismuth alloy (precipitation from ruthenium in a ruthenium alloy) and dealloying. Since the precipitation of the ruthenium from the ruthenium alloy is carried out in the molten metal at a high temperature, the distribution of the primary particle diameter is less likely to occur in the surface layer portion and the inside of the porous ruthenium particles obtained by the deal component removal. This is the diffusion of molten metal as a solvent, and when the removal atom in the ruthenium alloy is substituted with a solvent atom, it is directly discharged from the diffusion interface by convection in the solvent, and the molten metal of a predetermined composition often exists at the diffusion interface, so that a certain concentration exists. gradient. Therefore, the diffusion in the niobium alloy is carried out at a constant speed, so that helium atoms which contribute to the phase separation can be supplied at a constant speed, and therefore the size of the niobium microparticles is constant.

此外,藉上述製法得到之多孔質矽微粒子不易產生空隙率大之分布。另一方面,例如,在藉酸之蝕刻中,粒子內部產生對脫成分元素之濃度擴散之限制,因此粒子表層部之氣孔率大,且粒子內部之氣孔率小。依據條件不同,在粒子中心部留下無氣孔之Si芯,且與Li反應時產生微粉化,並且循環特性劣化。本發明係依據該知識完成者。 Further, the porous fine particles obtained by the above-described production method are less likely to have a distribution having a large void ratio. On the other hand, for example, in the etching by acid, since the concentration of the concentration of the de-component element is limited inside the particles, the porosity of the surface layer portion of the particle is large, and the porosity of the inside of the particle is small. Depending on the conditions, a Si core having no pores is left in the center of the particle, and when it reacts with Li, micronization occurs, and cycle characteristics are deteriorated. The present invention is based on this knowledge.

即,提供以下之發明。 That is, the following invention is provided.

(1)一種多孔質矽粒子,係多數矽微粒子接合而具有連續空隙者,其特徵在於前述矽微粒子之形狀係球狀或多角柱狀,且前述矽微粒子之粒徑、支柱徑或支柱邊之平均x係2nm至2μm,又,前述矽微粒子之粒徑、支柱徑或支柱邊之標準偏差σ係1至500nm,且前述平均x與前述標準偏差σ之比(σ/x)係0.01至0.5。 (1) A porous cerium particle in which a plurality of cerium microparticles are joined to each other and has a continuous void, wherein the strontium microparticles have a spherical or polygonal columnar shape, and the particle diameter of the cerium microparticles, the pillar diameter or the pillar side The average x is 2 nm to 2 μm, and the particle diameter, the pillar diameter or the standard deviation σ of the pillar side is 1 to 500 nm, and the ratio (σ/x) of the average x to the standard deviation σ is 0.01 to 0.5. .

(2)如(1)項記載之多孔質矽粒子,其特徵在於前述矽微粒子之形狀具有扁平球狀、圓柱狀或多角柱狀,且平均最長徑或最長邊a與平均最短徑或最短邊b之比(a/b)係1.1至50。 (2) The porous tantalum particle according to (1), wherein the shape of the fine particles is a flat spherical shape, a cylindrical shape or a polygonal column shape, and an average longest diameter or a longest side a and an average shortest or shortest side The ratio b (a/b) is 1.1 to 50.

(3)如(1)項記載之多孔質矽粒子,其特徵在於前述多孔質矽粒子之平均粒徑係0.1μm至1000μm,且前述多孔質矽粒子之平均空隙率係15至93%;又,前述多孔質矽粒子之在半徑方向上50%以上之表面附近區域的前述矽微粒子之平均粒徑Ds,與前述多孔質矽粒子之在半徑方向上50%以內之粒子內部區域地前述矽微粒子之平均粒徑Di之比Ds/Di係0.5至1.5,且前述多孔質矽粒子之在半徑方向上50%以上之表面附近區域的空隙率Xs、與前述多孔質矽粒子之在半徑方向上50%以內之粒子內部區域的空隙率Xi之比Xs/Xi係0.5至1.5,又,以除了氧以外之元素之比率計含有矽80原子%以上。 (3) The porous tantalum particle according to (1), wherein the porous niobium particles have an average particle diameter of 0.1 μm to 1000 μm, and the porous niobium particles have an average void ratio of 15 to 93%; The average particle diameter Ds of the cerium fine particles in the vicinity of the surface of the porous cerium particle in the radial direction of 50% or more, and the cerium fine particle in the internal region of the particle within 50% of the porous cerium particle in the radial direction The ratio of the average particle diameter Di to Ds/Di is 0.5 to 1.5, and the porosity Xs of the region near the surface of the porous cerium particle in the radial direction of 50% or more and the radial enthalpy particle are 50 in the radial direction. The ratio of the void ratio Xi of the inner region of the particles within the range of X is 0.5 to 1.5, and the ratio of the elements other than oxygen is 矽80 atom% or more.

(4)如(1)項記載之多孔質矽粒子,其特徵在於將前述多孔質矽粒子分為在半徑方向90%以上之表面附近區域S、及在半徑方向90%以下之粒子內部區域I,且令構成前述表面 附近區域S之前述矽微粒子的平均粒徑為Es,並且令構成前述粒子內部區域I之前述矽微粒子的平均粒徑為Ei時,Es/Ei係0.01至1.0。 (4) The porous tantalum particle according to the above aspect, wherein the porous tantalum particle is divided into a region S near the surface in the radial direction of 90% or more, and an inner region I of the particle having a radius of 90% or less. And constituting the aforementioned surface The average particle diameter of the above-mentioned fine particles in the vicinity S is Es, and when the average particle diameter of the above-mentioned fine particles constituting the internal region I of the particles is Ei, Es/Ei is 0.01 to 1.0.

(5)如(1)項記載之多孔質矽粒子,其特徵在於前述矽微粒子之特徵在於係以除了氧以外之元素之比率計含有矽80原子%以上之實心矽微粒子。 (5) The porous cerium particles according to the above aspect, characterized in that the cerium microparticles are characterized by containing 原子80 atom% or more of solid cerium microparticles in a ratio of elements other than oxygen.

(6)如(1)項記載之多孔質矽粒子,其特徵在於前述矽微粒子間之接合部的面積係前述矽微粒子之表面積的30%以下。 (6) The porous tantalum particle according to (1), wherein the area of the joint between the fine particles is 30% or less of the surface area of the fine particles.

(7)如(1)項記載之多孔質矽粒子,其特徵在於在前述矽微粒子及鄰接之前述矽微粒子之接合部中,前述接合部之厚度或直徑係比鄰接之前述矽微粒子大之矽微粒子直徑的80%以下,且前述接合部係藉結晶性矽或矽氧化物構成。 (7) The porous tantalum particle according to (1), wherein the joint portion of the tantalum fine particles and the adjacent fine particles is larger in thickness or diameter than the adjacent fine particles. The microparticle diameter is 80% or less, and the joint portion is composed of a crystalline niobium or tantalum oxide.

(8)如(2)項記載之多孔質矽粒子,其特徵在於多數前述矽微粒子係呈定向,且多數前述矽微粒子之長軸方向均在某方向之±30°以內。 (8) The porous tantalum particles according to (2), wherein the plurality of the fine particles are oriented, and the long axis directions of the plurality of fine particles are within ±30° in a certain direction.

(9)一種多孔質矽複合體粒子,係多數矽微粒子與多數矽化合物粒子接合,而具有連續空隙者,其特徵在於前述矽化合物粒子包含矽,與選自於由As、Ba、Ca、Ce、Co、Cr、Cu、Er、Fe、Gd、Hf、Lu、Mg、Mn、Mo、Nb、Nd、Ni、Os、Pr、Pt、Pu、Re、Rh、Ru、Sc、Sm、Sr、Ta、Te、Th、Ti、Tm、U、V、W、Y、Yb、Zr構成之群組中1種以上之複合體元素的化合物;且前述矽微粒子之粒徑、支柱徑或支柱邊之平均x係2nm至2μm,前述矽微粒子之粒徑、 支柱徑或支柱邊之標準偏差σ係1至500nm,又前述平均x與前述標準偏差σ之比(σ/x)係0.01至0.5。 (9) A porous ruthenium composite particle obtained by bonding a plurality of ruthenium microparticles to a plurality of ruthenium compound particles and having continuous voids, wherein the ruthenium compound particles comprise ruthenium and are selected from the group consisting of As, Ba, Ca, and Ce. , Co, Cr, Cu, Er, Fe, Gd, Hf, Lu, Mg, Mn, Mo, Nb, Nd, Ni, Os, Pr, Pt, Pu, Re, Rh, Ru, Sc, Sm, Sr, Ta a compound of one or more complex elements in a group consisting of Te, Th, Ti, Tm, U, V, W, Y, Yb, and Zr; and the average particle size, pillar diameter, or strut edge of the above-mentioned fine particles x is 2 nm to 2 μm, the particle size of the aforementioned fine particles, The standard deviation σ of the pillar diameter or the pillar edge is 1 to 500 nm, and the ratio (σ/x) of the aforementioned average x to the aforementioned standard deviation σ is 0.01 to 0.5.

(10)如(9)項記載之多孔質複合體矽粒子,其特徵在於前述矽微粒子之形狀具有扁平球狀、圓柱狀或多角柱狀,且平均最長徑或最長邊a與平均最短徑或最短邊b之比(a/b)係1.1至50。 (10) The porous composite ruthenium particle according to (9), wherein the ruthenium microparticle has a shape of a flat spherical shape, a columnar shape or a polygonal column shape, and an average longest diameter or a longest side a and an average shortest diameter or The ratio of the shortest side b (a/b) is 1.1 to 50.

(11)如(9)項記載之多孔質複合體矽粒子,其特徵在於前述多孔質矽複合體粒子之平均粒徑係0.1μm至1000μm。 (11) The porous composite ruthenium particles according to the above aspect, wherein the porous ruthenium composite particles have an average particle diameter of from 0.1 μm to 1000 μm.

(12)如(9)項記載之多孔質複合體矽粒子,其特徵在於前述矽微粒子係以除了氧以外之元素之比率計含有矽80原子%以上之實心矽微粒子。 (12) The porous composite cerium particles according to the above aspect, wherein the cerium fine particles are solid cerium fine particles containing 矽80 atom% or more in terms of a ratio of elements other than oxygen.

(13)如(9)項記載之多孔質複合體矽粒子,其特徵在於前述矽化合物粒子之平均粒徑係50nm至50μm,且前述矽化合物粒子係以除了氧以外之元素之比率計含有50至90原子%之矽的實心矽化合物粒子。 (13) The porous composite ruthenium particle according to the above aspect, wherein the ruthenium compound particles have an average particle diameter of 50 nm to 50 μm, and the ruthenium compound particles are 50 in a ratio of elements other than oxygen. Up to 90 atomic percent of solid bismuth compound particles.

(14)如(9)項記載之多孔質複合體矽粒子,其特徵在於前述多孔質矽複合體粒子之在半徑方向上50%以上之表面附近區域的前述矽微粒子之平均粒徑Ds,與前述多孔質矽複合體粒子之在半徑方向上50%以內之粒子內部區域的前述矽微粒子之平均粒徑Di之比Ds/Di係0.5至1.5。 The porous composite ruthenium particle according to the above aspect, wherein the average particle diameter Ds of the ruthenium microparticles in the vicinity of the surface of the porous ruthenium composite particle in the radial direction of 50% or more is The ratio Ds/Di of the average particle diameter Di of the cerium fine particles in the inner region of the particles within 50% of the radius of the porous cerium composite particles is 0.5 to 1.5.

(15)如(9)項記載之多孔質複合體矽粒子,其特徵在於前述多孔質矽複合體粒子之在半徑方向上50%以上之表面附近區域的空隙率Xs、與前述多孔質矽複合體粒子之在半徑方向上50%以內之粒子內部區域的空隙率Xi之比Xs/Xi係 0.5至1.5。 The porous composite ruthenium particle according to the above aspect, wherein the porous ruthenium composite particle has a porosity Xs in a region near the surface of 50% or more in the radial direction, and is composited with the porous ruthenium. The ratio of the void ratio Xi of the internal region of the particle within 50% of the radial direction of the bulk particle Xs/Xi 0.5 to 1.5.

(16)如(9)項記載之多孔質複合體矽粒子,其特徵在於將前述多孔質矽複合體粒子分為在半徑方向90%以上之表面附近區域S、及在半徑方向90%以下之粒子內部區域I,且令構成前述表面附近區域S之前述矽微粒子的平均粒徑為Es,並且令構成前述粒子內部區域I之前述矽微粒子的平均粒徑為Ei時,Es/Ei係0.01至1.0。 (16) The porous composite ruthenium particle according to the above aspect, wherein the porous ruthenium complex particles are divided into a region S near the surface in the radial direction of 90% or more and 90% or less in the radial direction. In the internal region I of the particle, and the average particle diameter of the ruthenium microparticles constituting the region S near the surface is Es, and the average particle diameter of the ruthenium microparticles constituting the inner region I of the particle is Ei, Es/Ei is 0.01 to 1.0.

(17)如(9)項記載之多孔質複合體矽粒子,其特徵在於前述矽微粒子及鄰接之前述矽微粒子之接合部中,前述接合部之厚度或直徑係比鄰接之前述矽微粒子大之矽微粒子直徑的80%以下,且前述接合部係藉結晶性矽或矽氧化物構成。 (17) The porous composite ruthenium particle according to the above aspect, wherein the joint portion of the ruthenium fine particles and the adjacent ruthenium fine particles is larger in thickness or diameter than the adjacent ruthenium fine particles The 矽 fine particle diameter is 80% or less, and the joint portion is composed of a crystalline ruthenium or osmium oxide.

(18)如(10)項記載之多孔質複合體矽粒子,其特徵在於多數前述矽微粒子係呈定向,且多數前述矽微粒子之長軸方向均在某方向之±30°以內。 (18) The porous composite ruthenium particle according to (10), wherein a plurality of the ruthenium microparticles are oriented, and a majority of the ruthenium microparticles have a major axis direction within ±30° of a certain direction.

藉本發明,可得到適合實現高容量及良好循環特徵之鋰離子電池用之負極材料等之多孔質矽粒子。 According to the present invention, porous ruthenium particles such as a negative electrode material for a lithium ion battery which is suitable for achieving high capacity and good cycle characteristics can be obtained.

1‧‧‧多孔質矽粒子 1‧‧‧Porous porous particles

3‧‧‧矽微粒子 3‧‧‧矽Microparticles

7‧‧‧矽中間合金 7‧‧‧矽Internal alloy

9‧‧‧第2相 9‧‧‧2nd phase

11‧‧‧單輥鑄造機 11‧‧‧Single roll casting machine

13‧‧‧矽合金 13‧‧‧矽 alloy

15‧‧‧坩堝 15‧‧‧坩埚

17‧‧‧鋼製輥 17‧‧‧Steel rolls

19‧‧‧帶狀矽中間合金 19‧‧‧Striped niobium alloy

21‧‧‧熔融裝置;熔融液浸漬裝置 21‧‧‧melting device; melt impregnation device

23‧‧‧熔融液 23‧‧‧ melt

25‧‧‧導輥 25‧‧‧guide roller

27‧‧‧支持輥 27‧‧‧Support roll

31‧‧‧氣體噴霧裝置 31‧‧‧ gas spray device

33‧‧‧坩堝 33‧‧‧坩埚

35‧‧‧噴嘴 35‧‧‧Nozzles

36‧‧‧噴出氣體 36‧‧‧Spray gas

37‧‧‧氣體噴射機 37‧‧‧ gas jet

38‧‧‧噴射流 38‧‧‧jet stream

39‧‧‧粉末狀矽中間合金 39‧‧‧Powdered tantalum alloy

41‧‧‧旋轉圓盤噴霧裝置 41‧‧‧Rotating disc spray device

43‧‧‧坩堝 43‧‧‧坩埚

45‧‧‧噴嘴 45‧‧‧Nozzles

49‧‧‧旋轉圓盤 49‧‧‧ rotating disc

51‧‧‧粉末狀矽中間合金 51‧‧‧ powdered niobium intermediate alloy

53‧‧‧坩堝 53‧‧‧坩埚

55‧‧‧鑄模 55‧‧‧Molding

57‧‧‧塊狀矽中間合金 57‧‧‧Block-like tantalum alloy

61‧‧‧熔融液浸漬裝置 61‧‧‧Melt impregnation device

63‧‧‧粒狀矽中間合金 63‧‧‧Grained niobium alloy

65‧‧‧浸漬用籠 65‧‧‧Immersion cage

67‧‧‧加壓缸 67‧‧‧Pressure cylinder

69‧‧‧熔融液 69‧‧‧ melt

71‧‧‧熔融液浸漬裝置 71‧‧‧Melt impregnation device

73‧‧‧粒狀矽中間合金 73‧‧‧Grained niobium alloy

75‧‧‧浸漬用籠 75‧‧‧Immersion cage

79‧‧‧熔融液 79‧‧‧ melt

81‧‧‧機械式攪拌機 81‧‧‧Mechanical mixer

83‧‧‧氣體吹入塞 83‧‧‧ gas blown plug

93‧‧‧粒狀矽中間合金 93‧‧‧Grained niobium alloy

101‧‧‧多孔質矽複合體粒子 101‧‧‧Porous 矽 composite particles

103‧‧‧矽微粒子 103‧‧‧矽Microparticles

105‧‧‧矽化合物粒子 105‧‧‧矽 compound particles

107‧‧‧矽中間合金 107‧‧‧矽Internal alloy

109‧‧‧第2相 109‧‧‧2nd phase

111‧‧‧矽中間合金 111‧‧‧矽Internal alloy

I‧‧‧粒子內部區域 I‧‧‧particle interior area

S‧‧‧表面附近區域 S‧‧‧ Area near the surface

圖1(a)是顯示本發明多孔質矽粒子1之圖,(b)是顯示多孔質矽粒子1之表面附近區域S與粒子內部區域I之圖。 Fig. 1(a) is a view showing the porous tantalum particle 1 of the present invention, and Fig. 1(b) is a view showing a region S near the surface of the porous tantalum particle 1 and an inner region I of the particle.

圖2(a)至(c)是顯示多孔質矽粒子1之製造方法之概略之圖。 2(a) to 2(c) are diagrams showing the outline of a method for producing the porous tantalum particles 1.

圖3是說明本發明帶狀矽中間合金之製造方法之概略之圖。 Fig. 3 is a view showing the outline of a method for producing a belt-shaped tantalum intermediate alloy of the present invention.

圖4是說明本發明帶狀矽中間合金浸漬至熔融元素之步驟之圖。 Fig. 4 is a view for explaining the steps of impregnating a molten tantalum alloy into a molten element of the present invention.

圖5(a)是顯示本發明氣體噴霧裝置31之圖,(b)是顯示本發明旋轉圓盤噴霧裝置41之圖。 Fig. 5(a) is a view showing the gas atomizing device 31 of the present invention, and Fig. 5(b) is a view showing the rotating disk spraying device 41 of the present invention.

圖6(a)至(c)是說明塊狀矽中間合金之製造步驟之圖。 6(a) to (c) are views for explaining the steps of manufacturing the bulk tantalum intermediate alloy.

圖7(a)、(b)是顯示本發明熔融液浸漬裝置之圖。 7(a) and 7(b) are views showing the melt immersion apparatus of the present invention.

圖8(a)是顯示本發明多孔質矽複合體粒子101之圖,(b)是顯示本發明多孔質矽複合體粒子101之表面附近區域S及粒子內部區域I之圖。 Fig. 8(a) is a view showing the porous tantalum composite particle 101 of the present invention, and Fig. 8(b) is a view showing a region S near the surface of the porous tantalum composite particle 101 of the present invention and an internal region I of the particle.

圖9(a)至(c)是顯示多孔質矽複合體粒子101之第一製造方法之概略圖。 9(a) to 9(c) are schematic views showing a first manufacturing method of the porous tantalum composite particles 101.

圖10(a)至(c)是顯示多孔質矽複合體粒子101之第二製造方法之概略圖。 10(a) to 10(c) are schematic views showing a second method of manufacturing the porous tantalum composite particles 101.

圖11是實施例1-12之多孔質矽粒子內部之SEM照片。 Figure 11 is a SEM photograph of the inside of the porous ruthenium particles of Examples 1-12.

圖12是比較例1-1之多孔質矽粒子之SEM照片。 Fig. 12 is a SEM photograph of porous cerium particles of Comparative Example 1-1.

圖13是實施例1-12之多孔質矽粒子內部之X光繞射光柵影像。 Figure 13 is an X-ray diffraction grating image of the inside of the porous ruthenium particles of Examples 1-12.

圖14是實施例2-1之多孔質矽複合體粒子表面之SEM照片。 Fig. 14 is a SEM photograph of the surface of the porous ruthenium complex particles of Example 2-1.

圖15是實施例2-1之多孔質矽複合體粒子內部截面之SEM照片。 Fig. 15 is a SEM photograph of the internal cross section of the porous ruthenium composite particles of Example 2-1.

圖16是實施例2-1之多孔質矽複合體粒子表面之SEM照 片。 Figure 16 is an SEM photograph of the surface of the porous tantalum composite particle of Example 2-1. sheet.

圖17是實施例2-1之多孔質矽複合體粒子之矽微粒子之X光繞射光柵影像。 Fig. 17 is an X-ray diffraction grating image of the fine particles of the porous tantalum composite particles of Example 2-1.

圖18是實施例3-7之多孔質矽粒子之SEM照片。 Figure 18 is a SEM photograph of porous cerium particles of Example 3-7.

圖19是構成實施例3-7之多孔質矽粒子之矽微粒子之TEM照片。 Fig. 19 is a TEM photograph of ruthenium fine particles constituting the porous ruthenium particles of Example 3-7.

圖20是形成實施例3-7之多孔質矽粒子之矽微粒子之粒度分布。 Figure 20 is a particle size distribution of the fine particles of the porous tantalum particles of Examples 3-7.

圖21是構成實施例3-8之多孔質矽粒子之矽微粒子之TEM照片,限制視野電子束繞射影像(左上)。 Fig. 21 is a TEM photograph of ruthenium microparticles constituting the porous ruthenium particles of Example 3-8, and restricts the electron beam diffraction image of the field of view (top left).

圖22是顯示實施例1-15之步驟(b)中浸漬至熔融金屬後之矽微粒子與第2相之截面SEM照片。 Fig. 22 is a SEM photograph showing a cross section of the fine particles and the second phase after the immersion to the molten metal in the step (b) of the embodiment 1-15.

圖23是顯示實施例2-15之步驟(c)後,去除第2相後之多孔質矽粒子表面之矽微粒子之SEM照片。 Fig. 23 is a SEM photograph showing the fine particles of the surface of the porous tantalum particles after the second phase is removed after the step (c) of the embodiment 2-15.

圖24是比較例2-4之多孔質矽粒子之表面之SEM照片。 Fig. 24 is a SEM photograph of the surface of the porous cerium particles of Comparative Example 2-4.

圖25是實施例3-1之多孔質矽粒子之SEM照片。 Figure 25 is a SEM photograph of porous cerium particles of Example 3-1.

圖26是實施例3-2之多孔質矽粒子之SEM照片。 Figure 26 is a SEM photograph of the porous ruthenium particles of Example 3-2.

圖27是實施例3-3之多孔質矽粒子之SEM照片。 Figure 27 is a SEM photograph of the porous ruthenium particles of Example 3-3.

圖28(a)是實施例1-15之中間合金之微組織之照片,(b)是其放大圖。 Fig. 28 (a) is a photograph of the microstructure of the intermediate alloy of Examples 1 to 15, and (b) is an enlarged view thereof.

用以實施發明之形態 Form for implementing the invention [多孔質矽粒子] [Porous ruthenium particles] (多孔質矽粒子之構成) (Composition of porous ruthenium particles)

以下參照圖1說明本發明之多孔質矽粒子1。多孔質矽粒子1係多數矽微粒子3接合而具有連續空隙之多孔質矽粒子,又,矽微粒子3之形狀宜為球狀、圓柱狀或多角柱狀,且矽微粒子3之粒徑、支柱徑或支柱邊之平均x係2nm至2μm,又,矽微粒子3之粒徑、支柱徑或支柱邊之標準偏差σ係1至500nm,且平均x與標準偏差σ之比(σ/x)係0.01至0.5。由於平均x與標準偏差σ之比(即變動係數)在預定範圍內,故矽微粒子3之大小均一。 Hereinafter, the porous tantalum particle 1 of the present invention will be described with reference to Fig. 1 . The porous tantalum particles 1 are porous tantalum particles having a plurality of fine particles 3 joined to each other and having continuous voids. Further, the shape of the fine particles 3 is preferably spherical, cylindrical or polygonal, and the particle diameter of the fine particles 3 and the diameter of the pillars are small. Or the average x of the pillar side is 2 nm to 2 μm, and the particle diameter of the 矽 microparticle 3, the standard deviation of the pillar diameter or the pillar side σ is 1 to 500 nm, and the ratio of the average x to the standard deviation σ (σ/x) is 0.01. To 0.5. Since the ratio of the average x to the standard deviation σ (i.e., the coefficient of variation) is within a predetermined range, the size of the fine particles 3 is uniform.

矽微粒子3之形狀具有扁平球狀、圓柱狀或多角柱狀,且矽微粒子3之平均最長徑或最長邊a與平均最短徑或最短邊b之比(a/b)係1.1至50。由於矽微粒子3具有適當扁平之形狀,故將多孔質矽粒子1用於鋰離子二次電池之負極活性物質時,在充放電時使矽微粒子3膨脹收縮時,以填補空隙之方式膨脹,因此具有在負極不易產生破裂之效果。又,在低於1.1時,因等向性地產生膨脹收縮會容易在負極產生破裂。又,在大於50時,例如在成長成纖維狀時,因膨脹收縮向一方向集中會容易在負極產生破裂。 The shape of the fine particles 3 has a flat spherical shape, a cylindrical shape or a polygonal column shape, and the ratio of the average longest diameter or the longest side a of the fine particles 3 to the average shortest diameter or the shortest side b (a/b) is 1.1 to 50. Since the ruthenium microparticles 3 have a suitably flat shape, when the porous ruthenium particles 1 are used for a negative electrode active material of a lithium ion secondary battery, when the ruthenium microparticles 3 are expanded and contracted during charge and discharge, they expand so as to fill the voids. It has the effect of not easily causing cracking at the negative electrode. Further, when it is less than 1.1, it is easy to cause cracking in the negative electrode due to the isotropic expansion and contraction. Moreover, when it is larger than 50, for example, when it grows into a fiber shape, it will become easy to generate|occur|produce the fracture of a negative electrode by the expansion-contraction in one direction.

又,多孔質矽粒子1具有有連續空隙之三維網目構造,且矽微粒子3接合,又,平均粒徑係0.1μm至1000μm,且平均空隙率係15至93%。又,多孔質矽粒子1之特徵在於以除了氧以外之元素之比率計含有矽80原子%以上,且剩餘的是含有後述中間合金元素、熔融元素、其他不可避免不純物之實心粒子。 Further, the porous tantalum particles 1 have a three-dimensional network structure having continuous voids, and the fine particles 3 are joined, and the average particle diameter is 0.1 μm to 1000 μm, and the average void ratio is 15 to 93%. In addition, the porous tantalum particles 1 are characterized by containing 原子80 atom% or more in proportion to elements other than oxygen, and the remaining solid particles containing an intermediate alloy element, a molten element, and other unavoidable impurities described later.

此外,即使在該多孔質矽粒子之表面上形成 20nm以下之氧化物層亦沒有特性上之問題。 Further, even on the surface of the porous tantalum particles There is also no characteristic problem with the oxide layer below 20 nm.

又,多孔質矽粒子表面之氧化物層(氧化膜)可藉鹽酸等去除第2相後藉浸漬在0.0001至0.1N之硝酸形成。或者,亦可藉減壓蒸餾去除第2相後,保持在0.00000001至0.02MPa之氧分壓下形成。 Further, the oxide layer (oxide film) on the surface of the porous tantalum particles can be formed by removing the second phase with hydrochloric acid or the like and then immersing it in nitric acid of 0.0001 to 0.1 N. Alternatively, the second phase may be removed by distillation under reduced pressure, and then formed under an oxygen partial pressure of 0.00000001 to 0.02 MPa.

又,如圖1(b)所示,將多孔質矽粒子1分為在半徑方向50%以上之表面附近區域S及在半徑方向50%以下之粒子內部區域I,且令構成多孔質矽粒子之表面附近區域之矽微粒子之平均粒徑為Ds,並且令構成多孔質矽粒子之粒子內部區域之矽微粒子之平均粒徑為Di時,Ds/Di係0.5至1.5。 Further, as shown in Fig. 1(b), the porous tantalum particles 1 are divided into a region S near the surface in the radial direction of 50% or more and a region I inside the particle having a radius of 50% or less, and the porous germanium particles are formed. When the average particle diameter of the fine particles in the vicinity of the surface is Ds, and the average particle diameter of the fine particles of the inner region of the particles constituting the porous tantalum particles is Di, Ds/Di is 0.5 to 1.5.

又,中間合金之結晶粒(圖28)係在經過後述步驟(b)中之浸漬至熔融元素之步驟(c)中之脫成分蝕刻且變化中,得到與該中間合金之結晶粒相當之尺寸之多孔質矽粒子(未藉實施粉碎使其微粉化者)。將多孔質矽粒子分為在半徑方向90%以上之表面附近區域S及在半徑方向90%以下之粒子內部區域I,且令構成多孔質矽粒子之表面附近區域之矽微粒子之平均粒徑為Es,並且令構成多孔質矽粒子之粒子內部區域之矽微粒子之平均粒徑為Ei時,Es/Ei係0.01至1.0。即,多孔質矽粒子之粒子內部區域之矽微粒子最好以不比表面附近區域之矽微粒子小之方式,使熔融元素不過度浸漬至粒子內部。 Further, the crystal grains of the intermediate alloy (Fig. 28) are subjected to the de-component etching and the change in the step (c) of the impregnation of the molten element in the step (b) described later, and the size corresponding to the crystal grains of the intermediate alloy is obtained. Porous cerium particles (not pulverized by micro pulverization). The porous tantalum particles are divided into a region S near the surface in the radial direction of 90% or more and an inner region I of the particles in the radial direction of 90% or less, and the average particle diameter of the fine particles of the vicinity of the surface constituting the porous tantalum particle is Es, and when the average particle diameter of the fine particles of the inner region of the particles constituting the porous tantalum particles is Ei, Es/Ei is 0.01 to 1.0. That is, it is preferable that the fine particles in the inner region of the particles of the porous tantalum particles are not excessively impregnated into the inside of the particles so that the fine particles are not smaller than the fine particles in the vicinity of the surface.

又,在多孔質矽粒子中,表面附近區域S之空隙率Xs與粒子內部區域I之空隙率Xi之比之Xs/Xi係0.5至1.5。 Further, in the porous tantalum particles, the ratio of the porosity Xs of the region S in the vicinity of the surface to the void ratio Xi of the internal region I of the particles is 0.5 to 1.5 in terms of Xs/Xi.

即,本發明之多孔質矽粒子係在表面附近區域與粒子內部區域中,具有同樣之細孔構造,且粒子全體具有大致均一之細孔構造。 That is, the porous tantalum particles of the present invention have the same pore structure in the vicinity of the surface and the inner region of the particles, and the entire particles have a substantially uniform pore structure.

構成多孔質矽粒子1之矽微粒子3之特徵在於平均粒徑或平均支柱徑為2nm至2μm,且係具有結晶性之單結晶,並且係以除了氧以外之元素之比率計含有矽80原子%以上之實心粒子。又,矽微粒子3亦可包含矽合金、含矽之金屬間化合物。又,如果大致球形之微粒子獨立存在,則可測量粒徑,但是為大略多角柱狀時,使用對應於在與長軸垂直之截面之柱之直徑或一邊之平均支柱徑或平均支柱邊來評價。 The fine particles 3 constituting the porous tantalum particles 1 are characterized by an average particle diameter or an average pillar diameter of 2 nm to 2 μm, and are crystalline single crystals, and contain 矽80 atom% in terms of ratios of elements other than oxygen. Above solid particles. Further, the fine particles 3 may contain a niobium alloy or an intermetallic compound containing niobium. Further, if the substantially spherical microparticles exist independently, the particle diameter can be measured, but in the case of a substantially polygonal columnar shape, the average pillar diameter or the average pillar edge corresponding to the diameter or one side of the column perpendicular to the long axis is used. .

本發明中之三維網目構造係意味如在離相分解過程中產生之共連續構造或海綿構造之空孔互相連接之構造。具有多孔質矽粒子之空孔之空孔徑係0.1至300nm左右。 The three-dimensional mesh structure in the present invention means a configuration in which the pores of the co-continuous structure or the sponge structure which are generated during the phase separation decomposition are connected to each other. The pore diameter of the pores having the porous cerium particles is about 0.1 to 300 nm.

矽微粒子3之平均粒徑、平均支柱徑、平均支柱邊係2nm至2μm,較佳的是10至500nm,且更佳的是15至100nm。又,多孔質矽粒子1之平均空隙率係15至93%,較佳的是30至80%,且更佳的是40至70%。 The average particle diameter, average pillar diameter, and average pillar side of the fine particles 3 are 2 nm to 2 μm, preferably 10 to 500 nm, and more preferably 15 to 100 nm. Further, the average porosity of the porous cerium particles 1 is 15 to 93%, preferably 30 to 80%, and more preferably 40 to 70%.

又,矽微粒子3彼此局部地接合,且矽微粒子3之接合部之面積係前述多孔質矽粒子之表面積之30%以下。即,與假定矽微粒子3獨立存在求得之表面積比較,多孔質矽粒子1之表面積係70%以上。又,多孔質矽粒子1之比表面積係1至100m2/g。 Further, the fine particles 3 are partially joined to each other, and the area of the joined portion of the fine particles 3 is 30% or less of the surface area of the porous fine particles. That is, the surface area of the porous tantalum particle 1 is 70% or more as compared with the surface area obtained by assuming that the fine particles 3 are independently present. Further, the porous cerium particles 1 have a specific surface area of 1 to 100 m 2 /g.

本發明之多孔質矽粒子通常凝集存在,因此微矽 粒子之平均粒徑在此係指一次粒子之平均粒徑。粒徑之測量係併用電子顯微鏡(SEM)之影像資訊與動態光散射光度計(DLS)之體積基準中徑。平均粒徑可先藉SEM影像確認粒子形狀,且藉影像分析軟體(例如,Asahi Kasei Engineering製「azo-kun」(註冊商標))求得粒徑,或將粒子分散於溶劑中且藉DLS(例如,大塚電子製DLS-8000)測量。如果DLS測量時粒子充分地分散,且不凝集,則藉SEM與DLS可得到大致相同之測量結果。 The porous ruthenium particles of the present invention are usually agglomerated, so micro 矽 The average particle diameter of the particles herein means the average particle diameter of the primary particles. The particle size is measured using an electron microscope (SEM) image information and a volumetric reference medium diameter of a dynamic light scattering photometer (DLS). The average particle diameter can be confirmed by SEM image, and the particle size can be obtained by image analysis software (for example, "azo-kun" (registered trademark) manufactured by Asahi Kasei Engineering), or the particles can be dispersed in a solvent and borrowed by DLS ( For example, Otsuka Electronics DLS-8000) is measured. If the particles are sufficiently dispersed during the DLS measurement and are not agglutinated, substantially the same measurement results can be obtained by SEM and DLS.

又,構成多孔質矽粒子之矽微粒子互相接合,因此主要使用表面掃描式電子顯微鏡或穿透式電子顯微鏡求得平均粒徑。 Further, since the fine particles constituting the porous cerium particles are bonded to each other, the average particle diameter is mainly determined by a surface scanning electron microscope or a transmission electron microscope.

又,平均支柱徑係就長寬比5以上之棒狀(柱狀)之矽粒子而言,定義其柱之直徑為支柱徑。以該支柱徑之平均值作為平均支柱徑。該支柱徑主要是進行粒子之SEM觀察求得。 Further, the average pillar diameter is defined as a rod-shaped (columnar) crucible particle having an aspect ratio of 5 or more, and the diameter of the column is defined as a pillar diameter. The average of the pillar diameters is taken as the average pillar diameter. The pillar diameter is mainly obtained by performing SEM observation of particles.

矽微粒子之平均最長徑、平均最短徑係使用穿透式電子顯微鏡在影像處理後求得。 The average longest diameter and average shortest diameter of the 矽 microparticles were obtained after image processing using a transmission electron microscope.

首先,以TEM觀察將在瑪瑙研缽中粉碎之矽粒子在甲醇液中稀釋,且將該稀釋液滴下至具有碳覆膜之格網(3mm)並使之乾燥者。但是,粒子變重者由評價對象中去除。 First, the ruthenium particles pulverized in an agate mortar were diluted in a methanol solution by TEM observation, and the diluted droplets were dropped to a grid having a carbon coating ( 3mm) and make it dry. However, the particle weight is removed from the evaluation object.

接著,藉該TEM觀察結果與高解析度SEM觀察結果確認矽微粒子之尺寸沒有變化。 Next, the TEM observation result and the high-resolution SEM observation result confirmed that the size of the fine particles did not change.

又,扁平球狀粒子之平均粒徑係圓近似橢圓形粒子之 面積,且求得由此得到之粒徑之直徑作為圓相當徑,再統計地算出平均值、標準偏差。 Moreover, the average particle diameter of the flat spherical particles is a circle similar to an elliptical particle. The area was determined, and the diameter of the particle diameter thus obtained was determined as a circle-equivalent diameter, and the average value and the standard deviation were statistically calculated.

更具體而言,藉TEM觀察測量矽微粒子之長徑及短徑,且以該等長徑及短徑之各個平均值作為平均最長徑、平均最短徑。又,由各個長徑及短徑算出圓相當直徑,且計算該平均值及標準偏差,作為微粒子之平均粒徑及標準偏差。 More specifically, the long diameter and the short diameter of the fine particles are measured by TEM observation, and the average value of the long diameter and the short diameter is taken as the average longest diameter and the shortest average diameter. Further, the circle-equivalent diameter was calculated from each of the major axis and the minor axis, and the average value and the standard deviation were calculated as the average particle diameter and standard deviation of the fine particles.

平均空隙率係粒子中之空隙之比率。次微米以下之細孔亦可藉氮氣吸附法測量,但是細孔尺寸涵括大範圍時,可藉電子顯微鏡觀察,水銀壓入法(JIS R 1655「藉微細陶瓷之水銀壓入法之成形體氣孔徑分布測量方法」,由使水銀侵入空隙內時之壓力及水銀體積之關係導出),或氣體吸附法(JIS Z 8830:2001氣體吸附之粉體(固體)之比表面積測量方法)等測量。 The average void ratio is the ratio of the voids in the particles. The pores below the submicron can also be measured by the nitrogen adsorption method. However, when the pore size includes a wide range, it can be observed by an electron microscope, and the mercury intrusion method (JIS R 1655 "Molded by the mercury intrusion method of the fine ceramics" The measurement method of the pore size distribution is derived from the relationship between the pressure when the mercury is intruded into the void and the volume of the mercury, or the gas adsorption method (JIS Z 8830: 2001 method for measuring the specific surface area of the powder (solid) adsorbed by the gas). .

本發明之多孔質矽粒子1係藉Si中間合金之Si濃度或該中間合金製造時之冷卻速度成為0.1μm至1000μm之平均粒徑。又,藉降低Si濃度或增加冷卻速度,粒徑變小。在作為負極活性物質使用方面,該粒徑宜為0.1至50μm,較佳的是1至30μm,且更佳的是5至20μm。因此,多孔質矽粒子小時係作為凝集體或造粒體使用。又,多孔質矽粒子大時即使粗略地粉碎該多孔質矽粒子使用亦沒有任何問題。 The porous tantalum particle 1 of the present invention has an average particle diameter of 0.1 μm to 1000 μm by the Si concentration of the Si intermediate alloy or the cooling rate at the time of production of the intermediate alloy. Further, the particle size is reduced by lowering the Si concentration or increasing the cooling rate. In terms of use as the negative electrode active material, the particle diameter is preferably from 0.1 to 50 μm, preferably from 1 to 30 μm, and more preferably from 5 to 20 μm. Therefore, the porous cerium particles are used as aggregates or granules in an hour. Further, when the porous cerium particles are large, there is no problem even if the porous cerium particles are roughly pulverized.

在矽微粒子3與鄰接之矽微粒子3之接合部(連結部)中,前述接合部之厚度或直徑係比鄰接之矽微粒子3大之矽微粒子3之直徑之80%以下,且接合部係藉結晶性矽或 矽氧化物構成。接合部或連結部之厚度亦藉利用TEM觀察多孔質矽粒子求得。 In the joint portion (joining portion) between the fine particles 3 and the adjacent fine particles 3, the thickness or diameter of the joint portion is 80% or less of the diameter of the fine particles 3 larger than the adjacent fine particles 3, and the joint portion is borrowed. Crystalline enthalpy or 矽 oxide composition. The thickness of the joint portion or the joint portion is also determined by observing the porous niobium particles by TEM.

該連結厚度比率係,首先,測量接合之2多孔質矽粒子之連結部厚度或直徑,且比較該2多孔質矽粒子中較大者之多孔質矽粒子直徑。就多數多孔質矽粒子之連結部進行該比較,且其平均為80%以下。 In the connection thickness ratio, first, the thickness or diameter of the joint portion of the joined porous ruthenium particles was measured, and the larger porous ruthenium particle diameter of the two porous ruthenium particles was compared. This comparison was performed on the joint portion of the plurality of porous tantalum particles, and the average thereof was 80% or less.

多數矽微粒子3係呈定向,且多數矽微粒子3之長軸方向均在某方向之±30°以內。 Most of the fine particles 3 are oriented, and the long axis directions of most of the fine particles 3 are within ±30° of a certain direction.

(多孔質矽粒子之製造方法之概略) (Summary of a method for producing porous cerium particles)

使用圖2說明多孔質矽粒子1之製造方法之概略。 The outline of the manufacturing method of the porous cerium particle 1 is demonstrated using FIG.

首先,在步驟(a)中,如圖2(a)所示,加熱、熔融矽與中間合金元素,製作矽中間合金7。 First, in the step (a), as shown in Fig. 2 (a), the crucible intermediate alloy 7 is produced by heating and melting the crucible and the intermediate alloy element.

然後,在步驟(b)中,使矽中間合金7浸漬於熔融元素之熔融液中。此時,如圖2(b)所示,矽中間合金7之中間合金元素,例如溶出至熔融液中,且主要形成由熔融元素構成之第2相9,並且只有矽析出或結晶作為矽微粒子3。第2相9係中間合金元素與熔融元素之合金,或藉中間合金元素與取代之熔融元素構成。該等矽微粒子3互相接合,形成三維網目構造。 Then, in the step (b), the niobium intermediate alloy 7 is immersed in the molten liquid of the molten element. At this time, as shown in Fig. 2(b), the intermediate alloying element of the niobium intermediate alloy 7 is, for example, eluted into the molten liquid, and mainly forms the second phase 9 composed of the molten element, and only niobium is precipitated or crystallized as the niobium fine particles. 3. The second phase 9 is an alloy of an intermediate alloy element and a molten element, or is composed of an intermediate alloy element and a substituted molten element. The fine particles 3 are joined to each other to form a three-dimensional mesh structure.

然後,在步驟(c)中,如圖2(c)所示,藉由使用酸或鹼等之脫成分蝕刻等之方法,去除第2相時,得到矽微粒子3接合之多孔質矽粒子1。 Then, in the step (c), as shown in FIG. 2(c), when the second phase is removed by a method such as de-component etching using an acid or a base, the porous cerium particles 1 in which the cerium microparticles 3 are bonded are obtained. .

以下說明在各步驟中之現象。首先,在步驟(a)中,熔融、凝固矽與中間合金元素(X)時,形成矽與中間合 金元素之矽中間合金7。 The phenomenon in each step will be described below. First, in the step (a), when the crucible and the intermediate alloy element (X) are melted and solidified, the crucible and the intermediate are formed. Gold alloy between the base alloy 7.

然後,在步驟(b)中,使該矽中間合金浸漬在表1規定之熔融元素(Y)浴時,熔融元素(Y)一面擴散一面浸透至矽中間合金中,且矽中間合金中之中間合金元素(X)形成熔融元素(Y)與合金層作為第2相。或者,合金中之中間合金元素(X)溶出至熔融元素(Y)之金屬浴中,且熔融元素(Y)形成新的第2相。在該反應中,剩下矽中間合金中含有之矽原子。結果,該矽原子由擴散狀態以奈米尺寸凝集時,形成矽原子之網路,且形成三維網目構造。又,在形成大粒徑之條件下得到清晰小面成長之粒子。 Then, in the step (b), when the niobium intermediate alloy is immersed in the molten element (Y) bath specified in Table 1, the molten element (Y) is permeated while being diffused into the niobium intermediate alloy, and intermediate in the niobium intermediate alloy. The alloying element (X) forms a molten element (Y) and an alloy layer as the second phase. Alternatively, the intermediate alloying element (X) in the alloy is eluted into the metal bath of the molten element (Y), and the molten element (Y) forms a new second phase. In this reaction, the ruthenium atom contained in the ruthenium intermediate alloy is left. As a result, when the germanium atom is aggregated in a nanometer size by a diffusion state, a network of germanium atoms is formed, and a three-dimensional mesh structure is formed. Further, particles having a clear facet growth were obtained under the conditions of forming a large particle size.

又,藉由三維穿透式電子顯微鏡(例如日本電子製JEM-2100)之三維觀察,可立體地判明與鄰接矽微粒子之接合狀態,且由該接合數決定配位數。亦可舉該配位數取2至6作為特徵。 Further, by three-dimensional observation of a three-dimensional transmission electron microscope (for example, JEM-2100 manufactured by JEOL Ltd.), the state of bonding with the adjacent fine particles can be stereoscopically determined, and the number of joints is determined by the number of joints. It is also possible to take the coordination number from 2 to 6 as a feature.

在該步驟(b)中,即使含有矽微粒子之接合部且在表面上存在氧化物亦沒有任何問題。 In this step (b), there is no problem even if the joint portion containing the fine particles of the fine particles is present and the oxide is present on the surface.

又,在中間合金中沒有合金之矽初晶係在浸漬步驟(b)中對矽微粒子之析出產生大影響,且作為矽微粒子之生成核作用。因此,可製造以該初晶為核且具有大粒徑之矽微粒子。又,在製造100nm以下之矽微粒子方面,宜採用該矽初晶不存在之組成或非平衡凝固。 Further, the primary crystal system having no alloy in the intermediate alloy has a large influence on the precipitation of the fine particles in the impregnation step (b), and acts as a core for the formation of the fine particles. Therefore, it is possible to manufacture fine particles having a large particle diameter and having the primary crystal as a core. Further, in the case of producing fine particles of 100 nm or less, it is preferable to use a composition in which the primary crystal does not exist or non-equilibrium solidification.

由以上步驟可知,中間合金元素(X)與熔融元素(Y)需要以下條件。 From the above steps, it is understood that the intermediate alloy element (X) and the molten element (Y) require the following conditions.

.條件1:熔融元素(Y)之熔點比矽之熔點低50K以上。 . Condition 1: The melting point of the molten element (Y) is 50 K or more lower than the melting point of cerium.

假設熔融元素(Y)之熔點與矽之熔點接近時,將矽合金浸漬在熔融元素之熔融液中時,矽會溶解在熔融液中,因此需要條件1。 When the melting point of the molten element (Y) is close to the melting point of cerium, when the cerium alloy is immersed in the molten material of the molten element, cerium is dissolved in the molten metal, and therefore Condition 1 is required.

.條件2:使矽與中間合金元素凝固時不產生Si初晶。 . Condition 2: Si primary crystals are not generated when the tantalum and the intermediate alloy element are solidified.

形成矽與中間合金元素(X)之合金時,矽濃度增加時形成過共晶區域時形成粗大之矽初晶。該矽結晶不產生在浸漬步驟中之矽原子之擴散、再凝集,且不形成三維網目構造。 When an alloy of bismuth and an intermediate alloying element (X) is formed, a coarse ruthenium primary crystal is formed when a eutectic region is formed when the yttrium concentration is increased. The ruthenium crystal does not cause diffusion and re-aggregation of the ruthenium atoms in the impregnation step, and does not form a three-dimensional network structure.

.條件3:矽對熔融元素之溶解度比5原子%低。 . Condition 3: The solubility of cerium to the molten element is lower than 5 atom%.

這是因為中間合金元素(X)與熔融元素(Y)形成第2相時,必須使第2相中不含矽。 This is because when the intermediate alloy element (X) and the molten element (Y) form the second phase, it is necessary to prevent the second phase from containing ruthenium.

.條件4:中間合金元素與熔融元素不分離成2相。 . Condition 4: The intermediate alloy element and the molten element are not separated into two phases.

中間合金元素(X)與熔融元素(Y)分離成2相時,中間合金元素不會由矽合金分離,且不產生矽原子之擴散、再凝集。此外,即使進行酸之處理,在矽粒子中亦會留下中間合金元素。 When the intermediate alloying element (X) and the molten element (Y) are separated into two phases, the intermediate alloying element is not separated by the cerium alloy, and no diffusion or re-aggregation of the cerium atom occurs. In addition, even if the acid treatment is carried out, an intermediate alloy element is left in the ruthenium particles.

考慮以上條件1至4時,為製造多孔質矽粒子,可使用之中間合金元素與熔融元素之組合如下。又,矽之比率係全體之10原子%以上,且係對應中間合金元素之下述表1中之Si之最大含量中最高值以下。 In consideration of the above conditions 1 to 4, in order to produce porous cerium particles, a combination of an intermediate alloying element and a molten element which can be used is as follows. Further, the ratio of bismuth is 10 atom% or more of the total, and is the highest value of the maximum content of Si in the following Table 1 corresponding to the intermediate alloy element.

使用Co作為中間合金元素時,相對於Si與中間合金元素之和,Si之含量係10至77原子%,且得到之多孔質矽粒子之平均空隙率係15至84%。 When Co is used as the intermediate alloying element, the content of Si is 10 to 77 atom% with respect to the sum of Si and the intermediate alloying elements, and the obtained porous cerium particles have an average void ratio of 15 to 84%.

使用Cr作為中間合金元素時,相對於Si與中間合金元素之和,Si之含量係10至82原子%,且得到之多孔質矽粒子之平均空隙率係12至85%。 When Cr is used as the intermediate alloying element, the content of Si is 10 to 82 atom% with respect to the sum of Si and the intermediate alloying elements, and the obtained porous cerium particles have an average void ratio of 12 to 85%.

使用Cu作為中間合金元素時,相對於Si與中間合金元素之和,Si之含量係10至30原子%,且得到之多孔質矽粒子之平均空隙率係47至85%。 When Cu is used as the intermediate alloying element, the content of Si is 10 to 30 atom% with respect to the sum of Si and the intermediate alloying elements, and the obtained porous cerium particles have an average void ratio of 47 to 85%.

使用Fe作為中間合金元素時,相對於Si與中間合金元素之和,Si之含量係10至67原子%,且得到之多孔質矽粒子之平均空隙率係15至85%。 When Fe is used as the intermediate alloying element, the content of Si is 10 to 67 atom% with respect to the sum of Si and the intermediate alloying elements, and the obtained porous cerium particles have an average void ratio of 15 to 85%.

使用Mg作為中間合金元素時,相對於Si與中間合金元素之和,Si之含量係10至50原子%,且得到之多孔質矽粒子之平均空隙率係42至92%。 When Mg is used as the intermediate alloying element, the content of Si is 10 to 50 atom% with respect to the sum of Si and the intermediate alloying elements, and the obtained porous cerium particles have an average void ratio of 42 to 92%.

使用Mn作為中間合金元素時,相對於Si與中間合金元素之和,Si之含量係10至67原子%,且得到之多孔質矽粒子之平均空隙率係15至85%。 When Mn is used as the intermediate alloying element, the content of Si is 10 to 67 atom% with respect to the sum of Si and the intermediate alloying elements, and the obtained porous cerium particles have an average void ratio of 15 to 85%.

使用Mo作為中間合金元素時,相對於Si與中間合金元素之和,Si之含量係10至98原子%,且得到之多孔質矽粒子之平均空隙率係15至88%。 When Mo is used as the intermediate alloying element, the content of Si is 10 to 98 atom% with respect to the sum of Si and the intermediate alloying elements, and the average porosity of the obtained porous cerium particles is 15 to 88%.

使用Ni作為中間合金元素時,相對於Si與中間合金元素之和,Si之含量係10至55原子%,且得到之多孔質矽粒子之平均空隙率係15至85%。 When Ni is used as the intermediate alloying element, the content of Si is 10 to 55 atom% with respect to the sum of Si and the intermediate alloying elements, and the obtained porous cerium particles have an average void ratio of 15 to 85%.

使用P作為中間合金元素時,相對於Si與中間合金元素之和,Si之含量係10至50原子%,且得到之多孔質矽粒子之平均空隙率係48至93%。 When P is used as the intermediate alloying element, the content of Si is 10 to 50% by atom with respect to the sum of Si and the intermediate alloying elements, and the obtained porous cerium particles have an average void ratio of 48 to 93%.

使用Ti作為中間合金元素時,相對於Si與中間合金元素之和,Si之含量係10至82原子%,且得到之多孔質矽粒子之平均空隙率係15至89%。 When Ti is used as the intermediate alloying element, the content of Si is 10 to 82 at% with respect to the sum of Si and the intermediate alloying elements, and the average porosity of the obtained porous cerium particles is 15 to 89%.

使用Zr作為中間合金元素時,相對於Si與中間合金元素之和,Si之含量係10至90原子%,且得到之多孔質矽粒子之平均空隙率係15至92%。 When Zr is used as the intermediate alloying element, the content of Si is 10 to 90% by atom with respect to the sum of Si and the intermediate alloying elements, and the obtained porous cerium particles have an average void ratio of 15 to 92%.

又,雖然可使用2以上之列舉元素作為中間合金元素,但是此時使用亦對應該等中間合金元素中任一中間合金元素之熔融元素作為熔融元素。 Further, although two or more of the listed elements may be used as the intermediate alloy element, in this case, a molten element corresponding to any of the intermediate alloy elements such as the intermediate alloy element is used as the molten element.

(多孔質矽粒子之製造方法) (Method for producing porous cerium particles)

以下說明本發明之多孔質矽粒子之製造方法。 Hereinafter, a method for producing the porous cerium particles of the present invention will be described.

首先,在真空爐或非氧化性環境氣體爐中加熱、溶解摻混矽與選自於由As、Ba、Ca、Ce、Co、Cr、Cu、Er、Fe、Gd、Hf、Lu、Mg、Mn、Mo、Nb、Nd、Ni、P、Pd、Pr、Pt、Pu、Re、Rh、Ru、Sc、Sm、Sr、Ta、Te、Th、Ti、Tm、U、V、W、Y、Yb、Zr構成之群組之1以上之中間合金元素,使矽之比率成為全體之10至98原子%,且較佳為15至50原子%之混合物。然後,使用例如,藉雙輥鑄造機之薄板連續鑄造或如圖3所示之單輥鑄造機11,由坩堝15滴下矽合金13,且一面接觸旋轉之鋼製輥17一面凝固並且製造線狀或帶狀矽中間合金19。又,線狀之母合金亦可藉直接紡絲法 製造。或者,與線狀或帶狀不同,亦可將矽中間合金作成具有一定長度之箔片。 First, heating, dissolving the enthalpy in a vacuum furnace or a non-oxidizing ambient gas furnace and selecting from the group consisting of As, Ba, Ca, Ce, Co, Cr, Cu, Er, Fe, Gd, Hf, Lu, Mg, Mn, Mo, Nb, Nd, Ni, P, Pd, Pr, Pt, Pu, Re, Rh, Ru, Sc, Sm, Sr, Ta, Te, Th, Ti, Tm, U, V, W, Y, The intermediate alloying element of 1 or more of the group consisting of Yb and Zr has a ratio of lanthanum of 10 to 98 atom%, and preferably 15 to 50 atom% of the whole. Then, using, for example, a continuous casting of a thin plate of a twin-roll casting machine or a single-roll casting machine 11 as shown in Fig. 3, the yttrium alloy 13 is dropped from the crucible 15 and the steel roller 17 is contacted with one side to be solidified and manufactured in a line shape. Or a ribbon-shaped intermediate alloy 19. In addition, the linear mother alloy can also be directly spun Manufacturing. Alternatively, unlike the linear or ribbon shape, the tantalum intermediate alloy may be formed into a foil having a certain length.

線狀或帶狀矽中間合金19之厚度宜為0.1μm至2mm,較佳為0.1至500μm,且更佳為0.1至50μm。矽中間合金凝固時之冷卻速度為0.1K/s以上,較佳為100K/s以上,且更佳為400K/s以上。這使在凝固初期生成之初晶之粒徑變小,因此有助於縮短在下一步驟中之熱處理時間。又,由於該初晶之晶粒變小,故多孔質矽粒子之粒徑亦成正比地變小。此外,矽合金(中間合金)之厚度厚達2mm以上時,由於Si含量高,故缺乏韌性且發生破裂、斷線等,因此不理想。 The thickness of the linear or strip-shaped tantalum intermediate alloy 19 is preferably from 0.1 μm to 2 mm, preferably from 0.1 to 500 μm, and more preferably from 0.1 to 50 μm. The cooling rate of the niobium intermediate alloy upon solidification is 0.1 K/s or more, preferably 100 K/s or more, and more preferably 400 K/s or more. This makes the particle size of the primary crystal formed at the initial stage of solidification small, thereby contributing to shortening the heat treatment time in the next step. Further, since the crystal grains of the primary crystals become small, the particle diameter of the porous tantalum particles is also reduced in proportion. Further, when the thickness of the niobium alloy (intermediate alloy) is 2 mm or more, since the Si content is high, the toughness is lacking, and cracking, disconnection, and the like are caused, which is not preferable.

接著,將矽中間合金浸漬在選自於對應於使用之中間合金元素之表1記載之Ag、Al、Au、Be、Bi、Cd、Ga、In、Pb、Sb、Sn、Tl、Zn之熔融元素之熔融液中,形成矽之離相分解(矽微粒子之析出)及中間合金元素與熔融元素之合金之第2相或藉中間合金元素與取代之前述熔融元素構成之第2相。在該浸漬步驟中起初形成Si微粒子。浸漬步驟係,例如,如圖4所示之熔融裝置21,且將帶狀矽中間合金19浸漬於熔融元素之熔融液23中。然後,透過導輥25或支持輥27捲取。熔融液23係加熱至比熔融元素之液相線溫度高10K以上之溫度。浸漬至熔融液23亦隨熔融溫度而不同,但宜為5秒以上且10000秒以下。這是因為實施10000秒以上浸漬時生成粗大之Si粒。又,只有多孔質矽粒子表面之矽微粒子因長時間浸漬而異常地成長。接著,在非氧化 性環境氣體下冷卻該帶狀矽中間合金。又,如後所述,在熔融液23內最好不含氧。 Next, the bismuth intermediate alloy is immersed in a melting of Ag, Al, Au, Be, Bi, Cd, Ga, In, Pb, Sb, Sn, Tl, Zn selected from Table 1 corresponding to the intermediate alloying elements used. In the melt of the element, a phase separation of ruthenium (precipitation of ruthenium particles), a second phase of an alloy of an intermediate alloy element and a molten element, or a second phase composed of the intermediate alloy element and the above-mentioned molten element are formed. Si fine particles are initially formed in the impregnation step. The impregnation step is, for example, a melting device 21 as shown in Fig. 4, and the belt-shaped niobium intermediate alloy 19 is immersed in the melt 23 of the molten element. Then, it is taken up by the guide roller 25 or the support roller 27. The melt 23 is heated to a temperature higher than the liquidus temperature of the molten element by 10 K or more. The immersion to the melt 23 also varies depending on the melting temperature, but is preferably 5 seconds or more and 10000 seconds or less. This is because coarse Si particles are formed when immersed for 10,000 seconds or more. Further, only the fine particles on the surface of the porous tantalum particles grow abnormally due to immersion for a long period of time. Then, in non-oxidation The strip-shaped tantalum intermediate alloy is cooled under a gaseous atmosphere. Further, as will be described later, it is preferable that the melt 23 contains no oxygen.

然後,藉酸、鹼、有機溶劑之至少一者溶解去除之步驟或使前述第2相升溫減壓且只蒸發去除該第2相之步驟,去除中間合金元素與熔融元素之合金之第2相或藉中間合金元素與取代之前述熔融元素構成之第2相。藉去除第2相,得到多孔質矽粒子。又,酸只要是使中間合金元素與熔融元素溶解,且不溶解矽之酸即可,可舉硝酸、鹽酸、硫酸等為例。 Then, the second phase of the alloy of the intermediate alloy element and the molten element is removed by a step of dissolving and removing at least one of an acid, a base, and an organic solvent or a step of heating and decompressing the second phase and evaporating only the second phase. Or a second phase composed of an intermediate alloy element and a substituted molten element. By removing the second phase, porous ruthenium particles are obtained. Further, the acid may be an acid which dissolves the intermediate alloy element and the molten element and does not dissolve the cerium, and examples thereof include nitric acid, hydrochloric acid, sulfuric acid and the like.

藉酸、鹼、有機溶劑溶解或藉升溫減壓蒸餾去除第2相後,得到藉微粒子構成之多孔質矽粒子。藉酸、鹼、有機溶劑溶解時,進行洗淨、乾燥。藉矽中間合金之矽濃度或矽中間合金製造時之冷卻速度,成為0.1μm至1000μm之粒徑。又,藉降低矽濃度或增加冷卻速度,粒徑變小。在作為負極活性物質使用方面,其平均粒徑宜為0.1至50μm,較佳為1至30μm,且更佳的是5至20μm。因此,多孔質矽粒子小時係使用具有導電性之黏結劑製作凝集體或造粒體,且作成漿液狀塗布在集電體上使用。又,多孔質矽粒子大時即使在研缽中粗略地粉碎該多孔質矽粒子使用亦沒有任何問題。由於微粒子彼此局部地接合,故可簡便地破碎。 The second phase is removed by dissolving with an acid, a base, or an organic solvent, or by distillation under reduced pressure, to obtain porous cerium particles composed of fine particles. When it is dissolved by an acid, a base or an organic solvent, it is washed and dried. The particle size of 0.1 to 1000 μm is obtained by the concentration of the niobium alloy or the cooling rate at the time of production of the niobium intermediate alloy. Further, the particle size is reduced by lowering the concentration of ruthenium or increasing the cooling rate. In terms of use as the negative electrode active material, the average particle diameter thereof is preferably from 0.1 to 50 μm, preferably from 1 to 30 μm, and more preferably from 5 to 20 μm. Therefore, when the porous cerium particles are used, an aggregate or a granule is produced using a conductive binder, and the slurry is applied to the current collector. Further, when the porous cerium particles are large, there is no problem in that the porous cerium particles are roughly pulverized in a mortar. Since the microparticles are partially joined to each other, they can be easily broken.

(多孔質矽粒子之製造方法之另一例) (Another example of a method for producing porous cerium particles)

作為多孔質矽複合體粒子1之製造方法之另一例,亦可使用粉末狀、粒狀、塊狀之矽中間合金19取代線狀或帶狀矽中 間合金。 As another example of the method for producing the porous tantalum composite particle 1, a powdery, granular or massive tantalum intermediate alloy 19 may be used instead of the linear or ribbon-shaped tantalum. Intermetallic.

首先,在真空爐或非氧化性環境氣體爐中加熱、溶解摻合矽與選自於由As、Ba、Ca、Ce、Co、Cr、Cu、Er、Fe、Gd、Hf、Lu、Mg、Mn、Mo、Nb、Nd、Ni、P、Pd、Pr、Pt、Pu、Re、Rh、Ru、Sc、Sm、Sr、Ta、Te、Th、Ti、Tm、U、V、W、Y、Yb、Zr構成之群組之1以上之複合體元素,使矽之比率成為全體之10至98原子%,且較佳為15至50原子%之混合物。然後,藉由如圖5所示之噴霧法製造粒、粉狀矽中間合金之方法或藉由圖6所示之鑄塊製造法得到塊狀之鑄塊且進一步藉由進行機械之粉碎之方法製造粒狀矽中間合金。 First, heating and dissolving the blended ruthenium in a vacuum furnace or a non-oxidizing ambient gas furnace is selected from the group consisting of As, Ba, Ca, Ce, Co, Cr, Cu, Er, Fe, Gd, Hf, Lu, Mg, Mn, Mo, Nb, Nd, Ni, P, Pd, Pr, Pt, Pu, Re, Rh, Ru, Sc, Sm, Sr, Ta, Te, Th, Ti, Tm, U, V, W, Y, The complex element of 1 or more of the group consisting of Yb and Zr has a ratio of lanthanum of 10 to 98 atom%, and preferably 15 to 50 atom% of the whole. Then, a method of producing a granular or powdery niobium intermediate alloy by a spray method as shown in FIG. 5 or a bulk ingot by the ingot production method shown in FIG. 6 and further performing mechanical pulverization A granular bismuth intermediate alloy is produced.

圖5(a)顯示可藉氣體噴霧法製造粉末狀矽中間合金39之氣體噴霧裝置31。在坩堝33中,具有藉感應加熱等溶解之矽及中間合金元素之矽合金13,且在與由噴嘴35滴下該矽合金同時地,噴射來自氣體噴射機37之惰性氣體之噴射流,且粉碎矽合金13之熔融液,作成液滴且使之凝固形成粉末狀矽中間合金39。 Fig. 5(a) shows a gas atomizing device 31 which can produce a powdery niobium intermediate alloy 39 by a gas spray method. In the crucible 33, a crucible alloy 13 having a crucible and an intermediate alloying element dissolved by induction heating or the like, and simultaneously ejecting a jet of inert gas from the gas jet 37 while being dropped from the nozzle 35, and pulverizing The melt of the niobium alloy 13 is formed into droplets and solidified to form a powdery niobium intermediate alloy 39.

圖5(b)顯示可藉旋轉圓盤噴霧法製造粉末狀矽中間合金51之旋轉圓盤噴霧裝置41。在坩堝43中,有經溶解之矽及中間合金元素之矽合金13,且由噴嘴45滴下該矽合金,並且使矽合金13之熔融液落下至以高速旋轉之旋轉圓盤49,且以切線方向施加剪力破碎而形成粉末狀矽中間合金51。 Fig. 5(b) shows a rotary disc spray device 41 which can produce a powdery niobium intermediate alloy 51 by a rotary disc spray method. In the crucible 43, there is a tantalum alloy 13 of dissolved tantalum and an intermediate alloy element, and the niobium alloy is dropped from the nozzle 45, and the melt of the niobium alloy 13 is dropped to the rotating disc 49 which is rotated at a high speed, and is tangent The direction is applied by shear force to form a powdery niobium intermediate alloy 51.

圖6是說明藉鑄塊製造法形成塊狀矽中間合金57 之步驟之圖。首先,由坩堝53將矽合金13之熔融液倒入鑄模55。然後,在鑄模55內冷卻矽合金13,凝固後去除鑄模55且得到塊狀矽中間合金57。可依需要粉碎塊狀矽中間合金57,得到粒狀矽中間合金。 Figure 6 is a view showing the formation of a massive tantalum intermediate alloy 57 by the ingot block manufacturing method. A diagram of the steps. First, the melt of the niobium alloy 13 is poured into the mold 55 by the crucible 53. Then, the tantalum alloy 13 is cooled in the mold 55, and after solidification, the mold 55 is removed and a bulk tantalum intermediate alloy 57 is obtained. The bulk tantalum intermediate alloy 57 can be pulverized as needed to obtain a granular tantalum intermediate alloy.

粒狀矽中間合金之厚度宜為10μm至50mm,較佳為0.1至10mm,且更佳為1至5mm。矽合金凝固時之冷卻速度為0.1K/s以上。又,矽中間合金之厚度厚達50mm以上時,熱處理時間變長,因此多孔質矽粒子之粒徑成長,且粗大化,故不理想。此時,可藉對該矽中間合金實施機械式粉碎,成為50mm以下來因應。 The thickness of the granular niobium intermediate alloy is preferably from 10 μm to 50 mm, preferably from 0.1 to 10 mm, and more preferably from 1 to 5 mm. The cooling rate of the niobium alloy when solidified is 0.1 K/s or more. Further, when the thickness of the niobium intermediate alloy is 50 mm or more, the heat treatment time becomes long, and therefore the particle diameter of the porous niobium particles grows and coarsens, which is not preferable. At this time, it is possible to perform mechanical pulverization on the bismuth intermediate alloy to be 50 mm or less.

接著,將矽中間合金浸漬在選自於對應於使用之中間合金元素之表1記載之Ag、Al、Au、Be、Bi、Cd、Ga、In、Pb、Sb、Sn、Tl、Zn之熔融元素之熔融液中,形成矽之離相分解及中間合金元素與熔融元素之合金之第2相。又,在該熔融液中之氧宜預先減低至100ppm以下,較佳的是10ppm以下,且更佳的是2ppm以下。這是因為熔融液中溶存氧與矽反應且形成二氧化矽,且矽以該二氧化矽為核成長為小面狀,且粗大化。作為其對策,可藉木炭、石墨等之固體還原材或非氧化性氣體還原,又,亦可預先添加與氧親和力強之元素。在該浸漬步驟中先形成矽微粒子。 Next, the bismuth intermediate alloy is immersed in a melting of Ag, Al, Au, Be, Bi, Cd, Ga, In, Pb, Sb, Sn, Tl, Zn selected from Table 1 corresponding to the intermediate alloying elements used. In the melt of the element, the second phase of the phase separation of the bismuth and the alloy of the intermediate alloy element and the molten element is formed. Further, the oxygen in the melt is preferably reduced to 100 ppm or less, preferably 10 ppm or less, and more preferably 2 ppm or less. This is because dissolved oxygen in the molten metal reacts with hydrazine to form cerium oxide, and cerium is grown into a facet with the cerium oxide as a core, and is coarsened. As a countermeasure against this, it can be reduced by a solid reducing material such as charcoal or graphite or a non-oxidizing gas, or an element having a strong affinity with oxygen can be added in advance. The ruthenium microparticles are first formed in the impregnation step.

浸漬步驟係使用如圖7(a)所示之熔融液浸漬裝置61,且將粒狀矽中間合金63放入浸漬用籠65中,並且浸漬在熔融元素之熔融液69中。此時,如圖7(a)所示,使加壓缸67上下,賦予矽中間合金或熔融液機械式之振動或賦予 超音波之振動,使用利用圖7(b)所示之機械式攪拌機81之機械攪拌、利用氣體吹入塞83之氣體噴射或電磁力攪拌熔融液,藉此可在短時間進行反應。然後,在非氧化環境氣體下拉起且冷卻。熔融液69或79係加熱至比熔融元素之液相線溫度高10K以上之溫度。浸漬至熔融液亦隨熔融溫度而不同,但宜為5秒以上且10000秒以下。這是因為實施10000秒以上浸漬時生成粗大之Si粒。又,只有多孔質矽粒子表面之矽微粒子因長時間浸漬而異常地成長。 In the impregnation step, the melt impregnation device 61 shown in Fig. 7(a) is used, and the granular niobium intermediate alloy 63 is placed in the impregnation cage 65, and immersed in the melt 69 of the molten element. At this time, as shown in Fig. 7(a), the pressurizing cylinder 67 is moved up and down to impart mechanical vibration or impartance to the crucible intermediate alloy or the melt. The vibration of the ultrasonic wave can be stirred in a short time by mechanical stirring using a mechanical agitator 81 shown in Fig. 7 (b), gas injection by a gas injection plug 83, or electromagnetic stirring. Then, the non-oxidizing ambient gas is pulled down and cooled. The melt 69 or 79 is heated to a temperature higher than the liquidus temperature of the molten element by 10 K or more. The immersion to the melt also varies depending on the melting temperature, but is preferably 5 seconds or more and 10000 seconds or less. This is because coarse Si particles are formed when immersed for 10,000 seconds or more. Further, only the fine particles on the surface of the porous tantalum particles grow abnormally due to immersion for a long period of time.

然後,與前述製造方法同樣地,去除第2相,得到多孔質矽粒子。 Then, in the same manner as in the above production method, the second phase was removed to obtain porous tantalum particles.

(多孔質矽粒子之效果) (effect of porous ruthenium particles)

依據本發明,可得到具有習知沒有之三維網目狀構造之多孔質矽粒子。 According to the present invention, porous ruthenium particles having a three-dimensional network structure which is not conventionally known can be obtained.

依據本發明,可得到具有粒子全體大致均一之細孔構造之多孔質矽粒子。這是因為由熔融液中之矽中間合金之矽微粒子之析出係在高溫之熔融金屬中進行,故熔融金屬浸透至粒子內部。 According to the present invention, porous cerium particles having a pore structure having a substantially uniform particle shape can be obtained. This is because the precipitation of the fine particles of the niobium intermediate alloy in the melt is carried out in the molten metal at a high temperature, so that the molten metal permeates into the inside of the particles.

如果本發明之多孔質矽粒子作為鋰離子電池之負極活性物質使用,可得到高容量且長壽命之負極。 When the porous cerium particles of the present invention are used as a negative electrode active material of a lithium ion battery, a high capacity and long life negative electrode can be obtained.

[多孔質矽複合體粒子] [Porous ruthenium complex particles] (多孔質矽複合體粒子之構成) (Composition of porous ruthenium composite particles)

以下參照圖8說明本發明之多孔質矽粒子。如圖8(a)所示,本發明之多孔質矽複合體粒子101係矽微粒子103與矽化合物粒子105接合,且多孔質矽複合體粒子101之平均粒 徑係0.1μm至1000μm,又,多孔質矽複合體粒子101之平均空隙率係15至93%,且具有由連續空隙構成之三維網目構造。 The porous tantalum particles of the present invention will be described below with reference to Fig. 8 . As shown in Fig. 8(a), the porous tantalum composite particle 101 of the present invention is composed of the fine particles 103 bonded to the ruthenium compound particles 105, and the average particles of the porous ruthenium composite particles 101. The diameter of the porous tantalum composite particles 101 is 15 to 93%, and has a three-dimensional network structure composed of continuous voids.

本發明中之三維網目構造係意味如在離相分解過程中產生之共連續構造或海綿構造之空孔互相連接之構造。具有多孔質矽複合體粒子之空孔之空孔徑係0.1至300nm。 The three-dimensional mesh structure in the present invention means a configuration in which the pores of the co-continuous structure or the sponge structure which are generated during the phase separation decomposition are connected to each other. The pore size of the pores having the porous ruthenium complex particles is 0.1 to 300 nm.

就多孔質矽複合體粒子101而言,在半徑方向50%以上之表面附近區域之空隙率Xs與在半徑方向50%以內之粒子內部區域之空隙率Xi之比的Xs/Xi係0.5至1.5。 In the porous tantalum composite particle 101, the ratio of the void ratio Xs in the vicinity of the surface in the radial direction of 50% or more to the void ratio Xi in the inner region of the particle within 50% in the radial direction is 0.5 to 1.5. .

即,本發明之多孔質矽複合體粒子係在表面附近區域與粒子內部區域,具有同樣之細孔構造,且粒子全體具有大致均一之細孔構造。 That is, the porous tantalum composite particles of the present invention have the same pore structure in the vicinity of the surface and the inner region of the particles, and the entire particles have a substantially uniform pore structure.

空隙率Xs可藉SEM觀察多孔質矽複合體粒子101之表面求得,且空隙率Xi可藉SEM觀察多孔質矽複合體粒子101截面之與粒子內部區域相當之地方求得。 The void ratio Xs can be obtained by observing the surface of the porous tantalum composite particle 101 by SEM, and the void ratio Xi can be obtained by observing the cross section of the porous tantalum composite particle 101 corresponding to the inner region of the particle by SEM.

又,中間合金之結晶粒係在經過後述步驟(b)中之浸漬至熔融元素之步驟(c)中之脫成分蝕刻且變化中,得到與該中間合金之結晶粒相當之尺寸之多孔質矽複合體粒子(未藉實施粉碎使其微粉化者)。將多孔質矽複合體粒子101分為在半徑方向90%以上之表面附近區域S及在半徑方向90%以下之粒子內部區域I,且令構成表面附近區域S之矽微粒子103之平均粒徑為Es,並且令構成粒子內部區域I之矽微粒子103之平均粒徑為Ei時,Es/Ei宜為0.01至1.0。即, 多孔質矽粒子之粒子內部區域之矽微粒子最好以不比表面附近區域之矽微粒子小之方式,使熔融元素不過度浸漬至粒子內部。 Further, the crystal grains of the intermediate alloy are subjected to the de-component etching and the change in the step (c) of the molten element in the step (b) described later to obtain a porous crucible having a size equivalent to that of the intermediate alloy. Composite particles (not pulverized to make them micronized). The porous tantalum composite particles 101 are divided into a surface vicinity region S in the radial direction of 90% or more and a particle inner region I in the radial direction of 90% or less, and the average particle diameter of the fine particles 103 constituting the region S in the vicinity of the surface is Es, and when the average particle diameter of the fine particles 103 constituting the inner region I of the particles is Ei, Es/Ei is preferably from 0.01 to 1.0. which is, It is preferable that the fine particles in the inner region of the particles of the porous tantalum particles are not excessively impregnated into the inside of the particles in such a manner that they are not smaller than the fine particles in the vicinity of the surface.

矽微粒子103之平均粒徑或平均支柱徑之1邊係2nm至2μm,較佳的是10至500nm,且更佳的是20至300nm。又,平均空隙率係15至93%,較佳的是50至80%,且更佳的是60至70%。此外,一個一個之矽微粒子103之結晶構造係具有結晶性之單結晶。又,矽微粒子103係以除了氧以外之元素之比率計含有矽80原子%以上,且剩餘的是含有後述中間合金元素、熔融元素、其他不可避免不純物之實心粒子。 The one side of the average particle diameter or the average pillar diameter of the fine particles 103 is 2 nm to 2 μm, preferably 10 to 500 nm, and more preferably 20 to 300 nm. Further, the average void ratio is 15 to 93%, preferably 50 to 80%, and more preferably 60 to 70%. Further, the crystal structure of the fine particles 103 one by one has a single crystal of crystallinity. In addition, the fine particles 103 contain 矽80 atom% or more in terms of the ratio of elements other than oxygen, and the remaining solid particles containing an intermediate alloy element, a molten element, and other unavoidable impurities to be described later.

矽微粒子103之形狀宜為球狀或多角柱狀,且矽微粒子103之粒徑、支柱徑或支柱邊之平均x係2nm至2μm,又,矽微粒子103之粒徑、支柱徑或支柱邊之標準偏差σ係1至500nm,且平均x與標準偏差σ之比(σ/x)係0.01至0.5。 The shape of the fine particles 103 is preferably spherical or polygonal, and the particle diameter of the fine particles 103, the average diameter of the pillar diameter or the pillar side is 2 nm to 2 μm, and the particle diameter of the fine particles 103, the pillar diameter or the pillar edge. The standard deviation σ is 1 to 500 nm, and the ratio of the average x to the standard deviation σ (σ/x) is 0.01 to 0.5.

矽微粒子103之形狀具有扁平球狀、圓柱狀或多角柱狀,且平均最長徑或最長邊a與平均最短徑或最短邊b之比(a/b)係1.1至50。 The shape of the fine particles 103 has a flat spherical shape, a cylindrical shape or a polygonal column shape, and the ratio (a/b) of the average longest diameter or the longest side a to the average shortest diameter or the shortest side b is 1.1 to 50.

又,如圖8(b)所示,將多孔質矽複合體粒子101分為在半徑方向50%以上之表面附近區域S及在半徑方向50%以下之粒子內部區域I,且令構成多孔質矽複合體粒子之表面附近區域之矽微粒子之平均粒徑為Ds,並且令構成多孔質矽複合體粒子之粒子內部區域之矽微粒子之平均粒徑為Di時,Ds/Di係0.5至1.5。 Further, as shown in FIG. 8(b), the porous tantalum composite particles 101 are divided into a surface vicinity region S in the radial direction of 50% or more and a particle inner region I in the radial direction of 50% or less, and the porous structure is formed. When the average particle diameter of the fine particles in the vicinity of the surface of the composite particles is Ds, and the average particle diameter of the fine particles in the inner region of the particles constituting the porous tantalum composite particles is Di, Ds/Di is 0.5 to 1.5.

平均粒徑Ds可藉SEM觀察多孔質矽複合體粒子1之表面求得,且平均粒徑Di可藉SEM觀察多孔質矽複合體粒子1之與粒子內部區域相當之地方之截面求得。 The average particle diameter Ds can be obtained by observing the surface of the porous tantalum composite particle 1 by SEM, and the average particle diameter Di can be obtained by observing the cross section of the porous tantalum composite particle 1 corresponding to the inner region of the particle by SEM.

矽化合物粒子105之平均粒徑係50nm至50μm,且較佳的是100nm至20μm,且更佳的是200nm至10μm。又,在組成上係由選自於由As、Ba、Ca、Ce、Co、Cr、Cu、Er、Fe、Gd、Hf、Lu、Mg、Mn、Mo、Nb、Nd、Ni、Os、Pr、Pt、Pu、Re、Rh、Ru、Sc、Sm、Sr、Ta、Te、Th、Ti、Tm、U、V、W、Y、Yb、Zr構成之群組之1以上之複合體元素,50至75原子%之矽及後述中間合金元素、熔融元素、其他不可避免不純物構成之實心之具有結晶性粒子。又,通常矽化合物粒子105比矽微粒子103大。 The average particle diameter of the cerium compound particles 105 is 50 nm to 50 μm, and preferably 100 nm to 20 μm, and more preferably 200 nm to 10 μm. Further, the composition is selected from the group consisting of As, Ba, Ca, Ce, Co, Cr, Cu, Er, Fe, Gd, Hf, Lu, Mg, Mn, Mo, Nb, Nd, Ni, Os, Pr a composite element of one or more groups consisting of Pt, Pu, Re, Rh, Ru, Sc, Sm, Sr, Ta, Te, Th, Ti, Tm, U, V, W, Y, Yb, and Zr, 50 to 75 atom% of solid and crystalline intermediate particles composed of an intermediate alloy element, a molten element, and other unavoidable impurities described later. Further, the ruthenium compound particles 105 are usually larger than the ruthenium particles 103.

又,即使在多孔質矽複合體粒子101之表面,即,矽微粒子103或矽化合物粒子105上,形成厚度20nm以下,或各個矽微粒子103或矽化合物粒子105之粒徑比係10%以下之氧化物層,在特性上亦沒有問題。 Further, even on the surface of the porous tantalum composite particle 101, that is, the fine particles 103 or the ruthenium compound particles 105, the thickness is 20 nm or less, or the particle size ratio of each of the fine particles 103 or the ruthenium compound particles 105 is 10% or less. The oxide layer has no problem in terms of characteristics.

又,多孔質矽複合體粒子101之表面之氧化物層可在去除第2相後藉浸漬在0.0001至0.1N之硝酸形成。或者,亦可在去除第2相後,保持在0.00000001至0.02MPa之氧分壓下形成。形成該矽之氧化物層時,多孔質矽複合體粒子101即使在大氣中亦極安定,且不需要在套手工作箱中處理。 Further, the oxide layer on the surface of the porous tantalum composite particle 101 can be formed by immersing nitric acid at 0.0001 to 0.1 N after removing the second phase. Alternatively, it may be formed under the partial pressure of oxygen of 0.00000001 to 0.02 MPa after the second phase is removed. When the oxide layer of the tantalum is formed, the porous tantalum composite particles 101 are extremely stable even in the atmosphere, and do not need to be processed in a handle box.

本發明之多孔質矽複合體粒子通常凝集存在,因此粒子之平均粒徑在此係指一次粒子之平均粒徑。粒徑之測量係併用電子顯微鏡(SEM)之影像資訊與動態光散射光 度計(DLS)之體積基準中徑。平均粒徑可先藉SEM影像確認粒子形狀,且藉影像分析軟體(例如,Asahi Kasei Engineering製「A像」(註冊商標))求得粒徑,或將粒子分散於溶劑中且藉DLS(例如,大塚電子製DLS-8000)測量。如果DLS測量時粒子充分地分散,且不凝集,則藉SEM與DLS可得到大致相同之測量結果。 The porous tantalum composite particles of the present invention are usually aggregated, and thus the average particle diameter of the particles means the average particle diameter of the primary particles. The particle size is measured using an electron microscope (SEM) image information and a volumetric reference medium diameter of a dynamic light scattering photometer (DLS). The average particle size can be confirmed by SEM image first, and the image analysis software (for example, "A image by Asahi Kasei Engineering" (Registered Trademark)) The particle size is determined, or the particles are dispersed in a solvent and measured by DLS (for example, DLS-8000 manufactured by Otsuka Electronics Co., Ltd.). If the particles are sufficiently dispersed during the DLS measurement and are not agglutinated, substantially the same measurement results can be obtained by SEM and DLS.

又,構成多孔質矽複合體粒子之矽微粒子與矽化合物粒子互相接合,因此主要使用表面掃描式電子顯微鏡或穿透式電子顯微鏡求得平均粒徑。 Further, since the fine particles of the porous cerium composite particles and the cerium compound particles are bonded to each other, the average particle diameter is mainly determined by a surface scanning electron microscope or a transmission electron microscope.

又,平均支柱徑係就長寬比5以上之棒狀(柱狀)之矽粒子而言,定義其柱之直徑為支柱徑。以該支柱徑之平均值作為平均支柱徑。該支柱徑主要是進行粒子之SEM觀察求得。 Further, the average pillar diameter is defined as a rod-shaped (columnar) crucible particle having an aspect ratio of 5 or more, and the diameter of the column is defined as a pillar diameter. The average of the pillar diameters is taken as the average pillar diameter. The pillar diameter is mainly obtained by performing SEM observation of particles.

平均空隙率係粒子中之空隙之比率。次微米以下之細孔亦可藉氮氣吸附法測量,但是細孔尺寸涵括大範圍時,可藉電子顯微鏡觀察或水銀壓入法(JIS R 1655「藉微細陶瓷之水銀壓入法之成形體氣孔徑分布測量方法」,由使水銀侵入空隙內時之壓力及水銀體積之關係導出)等測量。又,BET比表面積可藉氮氣吸附法測量。 The average void ratio is the ratio of the voids in the particles. The pores below the submicron can also be measured by the nitrogen adsorption method, but when the pore size includes a wide range, it can be observed by electron microscopy or mercury intrusion method (JIS R 1655 "Formed by mercury intrusion method of fine ceramics" The measurement method of the pore diameter distribution is derived from the relationship between the pressure when mercury is intruded into the space and the volume of mercury. Further, the BET specific surface area can be measured by a nitrogen gas adsorption method.

本發明之多孔質矽複合體粒子101係藉Si中間合金之Si濃度或該中間合金製造時之冷卻速度成為0.1μm至1000μm之粒徑。又,藉降低Si濃度或增加冷卻速度,粒徑變小。在作為負極活性物質使用方面,該粒徑宜為0.1至50μm,較佳的是1至30μm,且更佳的是5至20μm。因此, 多孔質矽粒子小時係作為凝集體或造粒體使用。又,多孔質矽粒子大時即使粗略地粉碎該多孔質矽粒子使用亦沒有任何問題。 The porous tantalum composite particle 101 of the present invention has a Si concentration of the Si intermediate alloy or a cooling rate at the time of production of the intermediate alloy of 0.1 μm to 1000 μm. Further, the particle size is reduced by lowering the Si concentration or increasing the cooling rate. In terms of use as the negative electrode active material, the particle diameter is preferably from 0.1 to 50 μm, preferably from 1 to 30 μm, and more preferably from 5 to 20 μm. therefore, The porous cerium particles are used as aggregates or granules in hours. Further, when the porous cerium particles are large, there is no problem even if the porous cerium particles are roughly pulverized.

在矽微粒子103與鄰接之矽微粒子103之接合部中,前述接合部之厚度或直徑係比鄰接之矽微粒子103大之矽微粒子103之直徑之80%以下,且接合部係藉結晶性矽或矽氧化物構成。 In the joint portion between the fine particles 103 and the adjacent fine particles 103, the thickness or diameter of the joint portion is 80% or less of the diameter of the fine particles 103 larger than the adjacent fine particles 103, and the joint portion is crystallized or矽 oxide composition.

多數矽微粒子103係呈定向,且多數矽微粒子103之長軸方向均在某方向之±30°以內。 Most of the fine particles 103 are oriented, and the long axis directions of most of the fine particles 103 are within ±30° of a certain direction.

測量係主要進行,例如如圖22、23之SEM影像,且藉對成長方向之角度平均值之偏差大小規定定向角度。 The measurement system is mainly performed, for example, the SEM image of Figs. 22 and 23, and the orientation angle is defined by the deviation of the average value of the angle of the growth direction.

(多孔質矽複合體粒子之第一製造方法之概略) (Summary of the first manufacturing method of the porous ruthenium composite particles)

使用圖9說明多孔質矽粒子101之製造方法之概略。 The outline of the manufacturing method of the porous cerium particle 101 is demonstrated using FIG.

首先,如圖9(a)所示,加熱、熔融矽、中間合金元素及複合體元素,製作矽中間合金107。此時,將矽、複合體元素與中間合金元素熔融、凝固,即會形成矽、複合體元素與中間合金元素的中間合金107,及由矽與複合體元素構成之矽化合物粒子。 First, as shown in FIG. 9(a), the tantalum intermediate alloy 107 is produced by heating, melting the tantalum, the intermediate alloy element, and the composite element. At this time, the tantalum, the composite element, and the intermediate alloy element are melted and solidified, that is, the intermediate alloy 107 of the tantalum, the composite element and the intermediate alloy element, and the tantalum compound particle composed of the tantalum and the composite element are formed.

然後,使矽中間合金107浸漬於熔融元素之熔融液中。當使矽中間合金107浸漬在熔融金屬浴中時,熔融元素浸透至矽中間合金107中。此時,中間合金元素一面與熔融元素形成合金固相,一面進一步藉熔融元素浸透形成液相。在該液相區域內留下矽原子與複合體元素。該矽原子或複合體元素在由擴散之狀態凝集時,矽微粒子103析出, 且形成矽原子與複合體元素之合金之網路,且形成三維網目構造。即,如圖9(b)所示,矽中間合金107之中間合金元素,例如溶出至熔融液中,且形成第2相109,並且矽析出作為矽微粒子103。第2相109係中間合金元素與熔融元素之合金,或藉中間合金元素與取代之熔融元素構成。又,矽化合物粒子105係不受熔融元素之熔融液影響地原樣留下。該等矽微粒子103、矽化合物粒子105互相接合,形成三維網目構造。 Then, the niobium intermediate alloy 107 is immersed in the molten liquid of the molten element. When the tantalum intermediate alloy 107 is immersed in the molten metal bath, the molten element is impregnated into the tantalum intermediate alloy 107. At this time, the intermediate alloy element forms an alloy solid phase with the molten element, and further penetrates the molten element to form a liquid phase. A ruthenium atom and a complex element are left in the liquid phase region. When the germanium atom or the complex element is aggregated by the diffusion state, the fine particles 103 are precipitated. And forming a network of alloys of germanium atoms and complex elements, and forming a three-dimensional mesh structure. That is, as shown in FIG. 9(b), the intermediate alloy element of the niobium intermediate alloy 107 is eluted into the molten metal, for example, and the second phase 109 is formed, and the niobium fine particles 103 are decanted. The second phase 109 is an alloy of an intermediate alloy element and a molten element, or an intermediate alloy element and a substituted molten element. Further, the cerium compound particles 105 are left as they are without being affected by the melt of the molten element. The fine particles 103 and the ruthenium compound particles 105 are bonded to each other to form a three-dimensional network structure.

又,在浸漬於熔融金屬浴之步驟中,即使矽單獨之矽初晶,或矽與複合體元素之化合物浸透熔融元素,亦不會產生矽原子或複合體元素之再凝集,且矽初晶或複合體元素之化合物原樣地留下。因此,最好增加製作矽中間合金107時之冷卻速度,進行該等之粒徑控制。 Further, in the step of immersing in the molten metal bath, even if the ruthenium primary crystal alone, or the compound of the ruthenium and the composite element is impregnated with the molten element, no re-aggregation of the ruthenium atom or the composite element occurs, and the ruthenium primary crystal Or the compound of the complex element is left as it is. Therefore, it is preferable to increase the cooling rate when the crucible intermediate alloy 107 is produced, and to perform such particle diameter control.

然後,如圖9(c)所示,藉由使用酸或鹼等之脫成分蝕刻等之方法,去除第2相109時,得到矽微粒子103與矽化合物粒子105接合之多孔質矽複合體粒子1。 Then, as shown in FIG. 9(c), when the second phase 109 is removed by a method such as de-ion etching using an acid or a base, the porous ruthenium complex particles in which the ruthenium fine particles 103 and the ruthenium compound particles 105 are bonded are obtained. 1.

由以上步驟來看,在中間合金元素、複合體元素及熔融元素需要以下條件。 From the above steps, the following conditions are required for the intermediate alloy element, the composite element, and the molten element.

‧條件1:熔融元素之熔點比矽之熔點低50K以上。 ‧Condition 1: The melting point of the molten element is 50 K or more lower than the melting point of 矽.

假設熔融元素之熔點與矽之熔點接近時,將矽中間合金浸漬在熔融元素之熔融液中時,矽會溶解在熔融液中,因此需要條件1。 When the melting point of the molten element is close to the melting point of cerium, when the cerium intermediate alloy is immersed in the molten material of the molten element, cerium is dissolved in the molten metal, and therefore Condition 1 is required.

‧條件2:使矽與中間合金元素凝固時不產生Si初晶。 ‧Condition 2: Si primary crystals are not produced when the tantalum and the intermediate alloy elements are solidified.

形成矽與中間合金元素之合金時,矽濃度增加時形成 過共晶區域時形成粗大之矽初晶。該矽結晶不產生在浸漬步驟中之矽原子之擴散、再凝集,且不形成三維網目構造。 When an alloy of tantalum and an intermediate alloy element is formed, an increase in the concentration of niobium is formed. A coarse ruthenium crystal is formed in the hypereutectic region. The ruthenium crystal does not cause diffusion and re-aggregation of the ruthenium atoms in the impregnation step, and does not form a three-dimensional network structure.

‧條件3:矽對中間合金元素與熔融元素之溶解度比5原子%低。 ‧Condition 3: The solubility of bismuth to the intermediate alloy element and the molten element is lower than 5 atom%.

這是因為中間合金元素與熔融元素形成第2相時,必須使第2相中不含矽。 This is because when the intermediate alloy element forms a second phase with the molten element, it is necessary to prevent the second phase from containing ruthenium.

‧條件4:中間合金元素與熔融元素不分離成2相。 ‧Condition 4: The intermediate alloy element and the molten element are not separated into two phases.

中間合金元素與熔融元素分離成2相時,中間合金元素不會由矽合金分離,且不產生矽原子之擴散、再凝集。此外,即使進行酸之處理,在矽粒子中亦會留下中間合金元素。 When the intermediate alloy element and the molten element are separated into two phases, the intermediate alloying element is not separated by the niobium alloy, and no diffusion or re-aggregation of the niobium atom occurs. In addition, even if the acid treatment is carried out, an intermediate alloy element is left in the ruthenium particles.

‧條件5:矽與複合體元素不分離成2相。 ‧Condition 5: The ruthenium and the composite element are not separated into two phases.

矽與複合體元素容易分離成2相時,最後無法得到由矽與複合體元素之合金構成之矽化合物粒子。 When the ruthenium and the composite element are easily separated into two phases, the ruthenium compound particles composed of the alloy of ruthenium and the composite element are not finally obtained.

‧條件6:對應於熔融元素之中間合金元素係在可選擇之元素中不含有複合體元素。 ‧ Condition 6: The intermediate alloying element corresponding to the molten element does not contain the complex element in the selectable element.

複合體元素係可選擇作為中間合金元素之元素,且具有如前述之中間合金元素之特徵時,熔融元素及複合體元素形成第2相,且在進行酸之處理時去除複合體元素。 The composite element may be selected as an element of an intermediate alloy element, and when it has the characteristics of the intermediate alloy element as described above, the molten element and the composite element form a second phase, and the composite element is removed when the acid treatment is performed.

考慮以上條件1至6時,為製造多孔質矽複合體粒子,可使用之中間合金元素、複合體元素與熔融元素及得到之多孔質矽複合體粒子之空隙率如下。又,複合體元素之比率係矽之1至33原子%。此外,矽之比率係相對對矽、中間合金元素及前述複合體元素之和為10原子%以上,且 對應中間合金元素之下述表2中之Si之最大含量之值(含有多數中間合金元素時,依據中間合金元素之比率分配對應各個中間合金元素之表2中之Si之最大含量之值)以下。在各個中間合金元素中使用可共通地使用之複合體元素。 When the above conditions 1 to 6 are considered, the void ratio of the intermediate alloy element, the composite element, the molten element, and the obtained porous tantalum composite particle which can be used for producing the porous tantalum composite particles is as follows. Further, the ratio of the composite elements is from 1 to 33 atom%. Further, the ratio of ruthenium is 10 atom% or more relative to the sum of the ruthenium, the intermediate alloy element, and the aforementioned composite element, and The value of the maximum content of Si in the following Table 2 corresponding to the intermediate alloy element (when a plurality of intermediate alloy elements are contained, the value of the maximum content of Si in Table 2 corresponding to each intermediate alloy element is assigned according to the ratio of the intermediate alloy elements) . A composite element that can be used in common is used in each of the intermediate alloy elements.

在形成矽中間合金107之步驟中,矽(X原子%)、中間合金元素(Y原子%)及1以上之複合體元素(Z1、Z2、Z3、....原子%)宜製作具有滿足以下式之組成之矽中間合金。又,[Si最大含量]係對應中間合金元素之前述表2中之Si最大含量之值,且具有多數中間合金元素時,係依據各中間合金元素之比率分配各中間合金元素之Si最大含量之值。又,具有多數中間合金元素時係Y原子%為多數中間合金元素之比率之和。 In the step of forming the ruthenium intermediate alloy 107, ruthenium (X atom%), intermediate alloy element (Y atom%), and 1 or more complex elements (Z 1 , Z 2 , Z 3 , . . atomic %) are preferably A niobium intermediate alloy having a composition satisfying the following formula was produced. Further, [the maximum content of Si] corresponds to the value of the maximum content of Si in the above-mentioned Table 2 of the intermediate alloy element, and when there are a plurality of intermediate alloy elements, the maximum content of Si of each intermediate alloy element is assigned according to the ratio of each intermediate alloy element. value. Further, when there are many intermediate alloy elements, the sum of the Y atom% is the ratio of the majority of the intermediate alloy elements.

10≦X<[Si最大含量] (1) 10≦X<[maximum content of Si] (1)

10≦a÷(a+Y)×100≦[Si最大含量] (2) 10≦a÷(a+Y)×100≦[Si maximum content] (2)

但是,a=X-1.5×(Z1+Z2+Z3、....) However, a=X-1.5×(Z 1 +Z 2 +Z 3 ,....)

(多孔質矽複合體粒子之第一製造方法) (First manufacturing method of porous ruthenium composite particles)

以下說明本發明之多孔質矽複合體粒子之製造方法。又,以下,使用在多孔質矽複合體粒子之製造方法中使用之裝置說明,且賦予各中間合金相同之符號,但是在含有複合體元素方面,用以製造多孔質矽複合體粒子之中間合金與用以製造多孔質矽粒子之中間合金不同。 Hereinafter, a method for producing the porous ruthenium composite particles of the present invention will be described. In the following, the device used in the method for producing porous ruthenium composite particles will be described, and the same symbols will be given to the respective intermediate alloys. However, in the case of containing the composite elements, the intermediate alloy for producing the porous ruthenium composite particles is used. It is different from the intermediate alloy used to make porous tantalum particles.

首先,使用矽,選自於由表2記載之Co、Cr、Cu、Fe、Mg、Mn、Mo、Ni、P、Ti、Zr構成之群組之1以上之中間合金元素,及對應中間合金元素之表2記載之1以上之複合體元素,在真空爐等中加熱、溶解摻混矽、中間合金元素、複合體元素之混合物。此時,形成矽與中間合金元素之合金,及矽與複合體元素之化合物。 First, an intermediate alloy element selected from the group consisting of Co, Cr, Cu, Fe, Mg, Mn, Mo, Ni, P, Ti, and Zr described in Table 2, and a corresponding intermediate alloy are used. The composite element of 1 or more described in Table 2 of the element is heated and dissolved in a vacuum furnace or the like to dissolve a mixture of ruthenium, an intermediate alloy element, and a composite element. At this time, an alloy of bismuth and an intermediate alloy element, and a compound of ruthenium and a complex element are formed.

然後,例如,使用如圖3所示之單輥鑄造機11,由坩堝 15滴下經熔融之矽合金13,一面接觸旋轉之鋼製輥17一面使之凝固且製造帶狀矽中間合金19或狀矽中間合金。矽中間合金凝固時之冷卻速度係10K/s以上,較佳的是100K/s以上,且更佳的是200K/s以上。該冷卻速度之高速化有助於微組織地縮小在凝固初期生成之矽化合物粒子。縮減矽化合物粒子之大小有助於縮短在下一步驟中之熱處理時間。帶狀矽中間合金19或線狀矽中間合金之厚度係0.1μm至2mm,較佳的是0.1至500μm,且更佳的是0.1至50μm。或者,與線狀或帶狀不同,亦可將矽中間合金作成具有一定長度之箔片。又,中間合金之微組織之平均尺寸宜為0.1μm至1mm,較佳的是0.1至500μm,且更佳的是0.1至300μm。這是因為在步驟(b)中浸漬至熔融金屬浴時浴元素優先地擴散通過結晶晶界,然後在晶界內擴散。 Then, for example, a single roll casting machine 11 as shown in Fig. 3 is used, 15 The molten yttrium alloy 13 was dropped, and the steel roll 17 was brought into contact with one another to solidify it, and a belt-shaped yttrium intermediate alloy 19 or a yttrium intermediate alloy was produced. The cooling rate at which the niobium intermediate alloy solidifies is 10 K/s or more, preferably 100 K/s or more, and more preferably 200 K/s or more. The increase in the cooling rate contributes to the microstructural reduction of the ruthenium compound particles formed in the early stage of solidification. Reducing the size of the ruthenium compound particles helps to shorten the heat treatment time in the next step. The thickness of the strip-shaped tantalum intermediate alloy 19 or the linear tantalum intermediate alloy is 0.1 μm to 2 mm, preferably 0.1 to 500 μm, and more preferably 0.1 to 50 μm. Alternatively, unlike the linear or ribbon shape, the tantalum intermediate alloy may be formed into a foil having a certain length. Further, the average size of the microstructure of the intermediate alloy is preferably from 0.1 μm to 1 mm, preferably from 0.1 to 500 μm, and more preferably from 0.1 to 300 μm. This is because the bath element preferentially diffuses through the crystal grain boundary when immersed in the molten metal bath in the step (b), and then diffuses in the grain boundary.

接著,使矽中間合金浸漬在選自於與表2記載之中間合金元素相對應之Ag、Al、Au、Be、Bi、Cd、Ga、In、Pb、Sb、Sn、Tl、Zn之至少1以上之熔融元素之金屬浴中,且使Si離相分解,並且形成中間合金元素與熔融元素之合金之第2相或藉中間合金元素與取代之前述熔融元素構成之第2相。浸漬步驟係,例如,使用如圖4所示之熔融裝置21,且將帶狀矽中間合金19或線狀矽中間合金浸漬在熔融元素之熔融液23中。然後,透過導輥25或支持輥27捲取。熔融液23係加熱至比熔融元素之液相線溫度高10K以上之溫度。浸漬至熔融液23亦隨熔融溫度而不同,但宜為5秒以上且10000秒以下。這是因為實施10000秒以上浸漬時生成 粗大之Si粒。又,只有多孔質矽粒子表面之矽微粒子因長時間浸漬而異常地成長。接著,在非氧化性環境氣體下冷卻浸漬後之帶狀矽中間合金19,且得到矽微粒子103、矽化合物粒子105、第2相109之複合體。 Next, the bismuth intermediate alloy is immersed in at least one selected from the group consisting of Ag, Al, Au, Be, Bi, Cd, Ga, In, Pb, Sb, Sn, Tl, and Zn corresponding to the intermediate alloying elements described in Table 2. In the above metal bath of the molten element, Si is decomposed out of phase, and a second phase of an alloy of an intermediate alloy element and a molten element or a second phase composed of the intermediate molten element and the substituted molten element is formed. The impregnation step is, for example, the use of the melting device 21 as shown in FIG. 4, and the belt-shaped niobium intermediate alloy 19 or the linear niobium intermediate alloy is immersed in the molten liquid 23 of the molten element. Then, it is taken up by the guide roller 25 or the support roller 27. The melt 23 is heated to a temperature higher than the liquidus temperature of the molten element by 10 K or more. The immersion to the melt 23 also varies depending on the melting temperature, but is preferably 5 seconds or more and 10000 seconds or less. This is because the immersion is performed for more than 10,000 seconds. Coarse Si particles. Further, only the fine particles on the surface of the porous tantalum particles grow abnormally due to immersion for a long period of time. Next, the entangled ruthenium intermediate alloy 19 is cooled under a non-oxidizing atmosphere gas, and a composite of ruthenium fine particles 103, ruthenium compound particles 105, and second phase 109 is obtained.

然後,藉酸、鹼、有機溶劑之至少一以上溶解中間合金元素與熔融元素之合金之第2相109或藉中間合金元素與取代之前述熔融元素構成之第2相109且只移除第2相109並且進行洗淨、乾燥。酸只要是使中間合金元素與熔融元素溶解,且不溶解矽之酸即可,可舉硝酸、鹽酸、硫酸等為例。或者,可藉升溫減壓且蒸發去除該第2相109來去除該第2相。 Then, the second phase 109 in which the alloy of the intermediate alloy element and the molten element is dissolved by at least one of an acid, a base, and an organic solvent, or the second phase 109 composed of the intermediate alloy element and the aforementioned molten element is substituted, and only the second phase is removed. The phase 109 is also washed and dried. The acid may be an acid which dissolves the intermediate alloy element and the molten element and does not dissolve the cerium, and examples thereof include nitric acid, hydrochloric acid, sulfuric acid, and the like. Alternatively, the second phase 109 may be removed by heating under reduced pressure and evaporated to remove the second phase.

又,去除第2相109後,得到多孔質矽複合體粒子101之粗大凝集體,因此藉球磨機等粉碎,使凝集體之平均粒徑成為0.1μm至20μm。 Further, after the removal of the second phase 109, coarse aggregates of the porous tantalum composite particles 101 are obtained. Therefore, the aggregates are pulverized by a ball mill or the like to have an average particle diameter of the aggregates of 0.1 μm to 20 μm.

(多孔質矽複合體粒子101之第一製造方法之另一例) (Another example of the first manufacturing method of the porous tantalum composite particle 101)

多孔質矽複合體粒子101之第一製造方法之另一例,亦可使用粉末狀、粒狀、塊狀之矽中間合金取代線狀或帶狀矽中間合金19。 In another example of the first method for producing the porous tantalum composite particles 101, a powdery, granular or massive tantalum intermediate alloy may be used instead of the linear or strip-shaped tantalum intermediate alloy 19.

首先,使用矽,選自於由表2記載之Co、Cr、Cu、Fe、Mg、Mn、Mo、Ni、P、Ti、Zr構成之群組之1以上之中間合金元素,及對應中間合金元素之表2記載之1以上之複合體元素,在真空爐等中加熱、溶解摻混矽、中間合金元素、複合體元素之混合物。 First, an intermediate alloy element selected from the group consisting of Co, Cr, Cu, Fe, Mg, Mn, Mo, Ni, P, Ti, and Zr described in Table 2, and a corresponding intermediate alloy are used. The composite element of 1 or more described in Table 2 of the element is heated and dissolved in a vacuum furnace or the like to dissolve a mixture of ruthenium, an intermediate alloy element, and a composite element.

然後,利用如圖5(a)、(b)所示之噴霧法製造粒、粉狀矽中間合金之方法或利用圖6所示之鑄塊製造法得到塊狀之鑄塊,且依需要進一步藉由進行機械之粉碎之方法製造粉末狀、粒狀或塊狀之矽中間合金。 Then, a method of producing a granular or powdery niobium intermediate alloy by a spray method as shown in FIGS. 5(a) and (b) or a bulk ingot using the ingot production method shown in FIG. 6 is carried out, and further if necessary A powdery, granular or massive niobium intermediate alloy is produced by mechanical pulverization.

圖5(a)顯示可藉氣體噴霧法製造粉末狀矽中間合金39之氣體噴霧裝置31。在坩堝33中,具有藉感應加熱等溶解之矽、中間合金元素及複合體元素之矽合金13,且在與由噴嘴35滴下該矽合金13同時地,噴射供給惰性氣體或空氣等之噴出氣體36之來自氣體噴射機37之噴射流38,且粉碎矽合金13之熔融液,作成液滴且使之凝固形成粉末狀矽中間合金39。 Fig. 5(a) shows a gas atomizing device 31 which can produce a powdery niobium intermediate alloy 39 by a gas spray method. In the crucible 33, the crucible alloy 13 having a crucible, an intermediate alloying element, and a composite element dissolved by induction heating or the like is sprayed and supplied with an inert gas or air, etc., simultaneously with dropping the niobium alloy 13 from the nozzle 35. The jet stream 38 from the gas jet machine 37 is pulverized, and the melt of the niobium alloy 13 is pulverized to form droplets and solidified to form a powdery niobium intermediate alloy 39.

圖5(b)顯示可藉旋轉圓盤噴霧法製造粉末狀矽中間合金51之旋轉圓盤噴霧裝置41。在坩堝43中,具有溶解之矽、中間合金元素及複合體元素之矽合金13,且由噴嘴45滴下該矽合金,並且使矽合金13之熔融液落下至以高速旋轉之旋轉圓盤49,且以切線方向施加剪力破碎而形成粉末狀矽中間合金51。 Fig. 5(b) shows a rotary disc spray device 41 which can produce a powdery niobium intermediate alloy 51 by a rotary disc spray method. In the crucible 43, the niobium alloy 13 having the dissolved niobium, the intermediate alloying element, and the composite element is dropped, and the niobium alloy is dropped from the nozzle 45, and the molten metal of the niobium alloy 13 is dropped to the rotating disc 49 which is rotated at a high speed. Further, shearing force is applied in a tangential direction to form a powdery niobium intermediate alloy 51.

圖6是說明藉鑄塊製造法形成塊狀矽中間合金57之步驟之圖。首先,由坩堝53將矽合金13之熔融液倒入鑄模55。然後,在鑄模55內冷卻矽合金13,凝固後去除鑄模55且得到塊狀矽中間合金57。可原樣地使用塊狀矽中間合金57,或亦可依需要粉碎,而作為粒狀矽中間合金使用。 Fig. 6 is a view for explaining the steps of forming the bulk tantalum intermediate alloy 57 by the ingot casting method. First, the melt of the niobium alloy 13 is poured into the mold 55 by the crucible 53. Then, the tantalum alloy 13 is cooled in the mold 55, and after solidification, the mold 55 is removed and a bulk tantalum intermediate alloy 57 is obtained. The bulk tantalum intermediate alloy 57 may be used as it is, or may be pulverized as needed, and used as a granular tantalum intermediate alloy.

粉末狀、粒狀或塊狀之矽中間合金之粒徑宜為10μm至50mm,較佳為0.1至10mm,且更佳為1至5mm。矽 合金凝固時之冷卻速度為0.1K/s以上。又,矽中間合金之厚度厚達50mm以上時,熱處理時間變長,因此多孔質矽複合體粒子之粒徑成長,且粗大化,故不理想。此時,可藉對該矽中間合金實施機械式粉碎,成為50mm以下來因應。 The particle size of the powdery, granulated or massive base alloy is preferably from 10 μm to 50 mm, preferably from 0.1 to 10 mm, and more preferably from 1 to 5 mm.矽 The cooling rate of the alloy during solidification is 0.1 K/s or more. Further, when the thickness of the niobium intermediate alloy is 50 mm or more, since the heat treatment time is long, the particle size of the porous niobium composite particles grows and coarsens, which is not preferable. At this time, it is possible to perform mechanical pulverization on the bismuth intermediate alloy to be 50 mm or less.

由該矽及前述中間合金元素或前述複合體元素構成之中間合金之結晶粒徑宜為1000μm以下,較佳的是500μm以下,且更佳的是50μm以下。結晶粒徑為1000μm以上時,在步驟(b)中之熔融元素之晶界擴散係優先地進行,且粒內擴散停滯,因此無法產生均質之反應。 The intermediate alloy composed of the niobium and the intermediate alloy element or the composite element preferably has a crystal grain size of 1000 μm or less, preferably 500 μm or less, and more preferably 50 μm or less. When the crystal grain size is 1000 μm or more, the grain boundary diffusion of the molten element in the step (b) is preferentially carried out, and the intragranular diffusion is stagnated, so that a homogeneous reaction cannot be produced.

接著,使矽中間合金浸漬在對應於使用之中間合金元素之表2記載之熔融元素之熔融液中,且形成離相分解及中間合金元素與熔融元素之合金之第2相。又,該熔融液中之氧宜預先減低至100ppm以下,較佳的是10ppm以下,且更佳的是2ppm以下。這是因為熔融液中溶存氧與矽反應且形成二氧化矽,且矽以該二氧化矽為核成長為小面狀,且粗大化。作為其對策,可藉木炭、石墨等之固體還原材或非氧化性氣體還原,又,亦可預先添加與氧親和力強之元素。在該浸漬步驟中先形成矽微粒子。 Next, the niobium intermediate alloy is immersed in the melt of the molten element described in Table 2 corresponding to the intermediate alloy element used, and the second phase of the phase-decomposed and alloy of the intermediate alloy element and the molten element is formed. Further, the oxygen in the melt is preferably reduced to 100 ppm or less, preferably 10 ppm or less, and more preferably 2 ppm or less. This is because dissolved oxygen in the molten metal reacts with hydrazine to form cerium oxide, and cerium is grown into a facet with the cerium oxide as a core, and is coarsened. As a countermeasure against this, it can be reduced by a solid reducing material such as charcoal or graphite or a non-oxidizing gas, or an element having a strong affinity with oxygen can be added in advance. The ruthenium microparticles are first formed in the impregnation step.

浸漬步驟係使用如圖7(a)所示之熔融液浸漬裝置61,且將粒狀矽中間合金63放入浸漬用籠65中,並且浸漬在熔融元素之熔融液69中。此時,如圖7(a)所示,使加壓缸67上下,賦予矽中間合金或熔融液機械式之振動或賦予超音波之振動,使用利用圖7(b)所示之機械式攪拌機81之機械攪拌、利用氣體吹入塞83之氣體噴射或電磁力攪拌熔融 液,藉此可在短時間進行反應。然後,在非氧化環境氣體下拉起且冷卻。熔融液69或79係加熱至比熔融元素之液相線溫度高10K以上之溫度。浸漬至熔融液亦隨熔融溫度而不同,但宜為5秒以上且10000秒以下。這是因為實施10000秒以上浸漬時生成粗大之Si粒。又,只有多孔質矽粒子表面之矽微粒子因長時間浸漬而異常地成長。此外,矽中間合金之前述粉末狀、粒狀、塊狀之形狀只是藉大小將長寬比小之尺寸(長寬比5以下)之矽中間合金稱為粉末、粒、塊而已,並不是嚴密地定義。又,關於粒狀矽中間合金63、73、93,以前述粉末狀、粒狀、塊狀矽中間合金為代表且記載為粒狀矽中間合金。 In the impregnation step, the melt impregnation device 61 shown in Fig. 7(a) is used, and the granular niobium intermediate alloy 63 is placed in the impregnation cage 65, and immersed in the melt 69 of the molten element. At this time, as shown in Fig. 7 (a), the pressurizing cylinder 67 is placed up and down, and the mechanical vibration of the intermediate alloy or the molten metal or the vibration of the ultrasonic wave is applied, and the mechanical agitator shown in Fig. 7 (b) is used. Mechanical stirring of 81, gas injection by means of gas blowing into the plug 83 or electromagnetic stirring and melting Liquid, whereby the reaction can be carried out in a short time. Then, the non-oxidizing ambient gas is pulled down and cooled. The melt 69 or 79 is heated to a temperature higher than the liquidus temperature of the molten element by 10 K or more. The immersion to the melt also varies depending on the melting temperature, but is preferably 5 seconds or more and 10000 seconds or less. This is because coarse Si particles are formed when immersed for 10,000 seconds or more. Further, only the fine particles on the surface of the porous tantalum particles grow abnormally due to immersion for a long period of time. In addition, the above-mentioned powdery, granular, and block-shaped shapes of the niobium intermediate alloy are simply powders, granules, and blocks which are small in aspect ratio (length to width ratio of 5 or less) by size, and are not strictly Ground definition. Further, the granular niobium intermediate alloys 63, 73, and 93 are represented by the above-mentioned powdery, granular, or bulk niobium intermediate alloy and described as a granular niobium intermediate alloy.

然後,與前述製造方法同樣地,去除第2相,得到多孔質矽複合體粒子。 Then, in the same manner as the above production method, the second phase is removed to obtain porous tantalum composite particles.

(多孔質矽複合體粒子之第二製造方法) (Second manufacturing method of porous ruthenium composite particles)

以下說明本發明之多孔質矽複合體粒子之第二製造方法。第二製造方法,如圖10(a)所示,形成由矽及中間合金元素構成之矽中間合金111。然後,藉浸漬在熔融元素中添加複合體元素之熔融液中,如圖10(b)所示,形成矽微粒子103、矽化合物粒子105及第2相109。然後,如圖10(c)所示,去除第2相109且得到多孔質矽複合體粒子101。 Next, a second method for producing the porous ruthenium composite particles of the present invention will be described. In the second manufacturing method, as shown in Fig. 10 (a), a tantalum intermediate alloy 111 composed of tantalum and an intermediate alloy element is formed. Then, in the molten liquid in which the composite element is added by immersion in the molten element, as shown in FIG. 10(b), the fine particles 103, the ruthenium compound particles 105, and the second phase 109 are formed. Then, as shown in FIG. 10(c), the second phase 109 is removed and the porous tantalum composite particles 101 are obtained.

以下,具體說明第二製造方法。 Hereinafter, the second manufacturing method will be specifically described.

首先,溶解矽之粉末,及選自於由表2記載之Co、Cr、Cu、Fe、Mg、Mn、Mo、Ni、P、Ti、Zr構成之群組之1以上之中間合金元素之粉末,使矽(X原子%)、中間合金元素 (Y原子%)滿足式(3)。 First, the powder of the cerium is dissolved, and the powder of the intermediate alloying element selected from the group consisting of Co, Cr, Cu, Fe, Mg, Mn, Mo, Ni, P, Ti, and Zr described in Table 2 , making 矽 (X atom%), intermediate alloying elements (Y atom%) satisfies the formula (3).

X÷(X+Y)×100≦[Si最大含量] (3) X÷(X+Y)×100≦[maximum content of Si] (3)

然後,與第一製造方法同樣地,使用如圖3所示之單輥鑄造機11,製造矽與中間合金元素之合金之帶狀矽中間合金19或線狀中間合金元素。或者,藉由如圖5(a)、(b)所示之噴霧法製造粉末狀中間合金元素。又,亦可如圖6所示地將矽中間合金鑄造成鑄塊,且將該鑄塊機械地粉碎成粒狀。 Then, similarly to the first manufacturing method, a strip-shaped tantalum intermediate alloy 19 or a linear intermediate alloy element of an alloy of niobium and an intermediate alloy element is produced using a single roll casting machine 11 as shown in FIG. Alternatively, a powdery intermediate alloy element is produced by a spray method as shown in Figs. 5(a) and (b). Further, as shown in Fig. 6, the niobium intermediate alloy may be cast into an ingot, and the ingot may be mechanically pulverized into pellets.

接著,使矽中間合金浸漬在將對應於表2記載之中間合金元素之一以上之複合體元素添加各10原子%以下,且合計20原子%以下在對應於表2記載之中間合金元素之Ag、Al、Au、Be、Bi、Cd、Ga、In、Pb、Sb、Sn、Tl、Zn之至少1以上之熔融元素中製成之合金浴中,形成Si之離相分解,Si與複合體元素之化合物之形狀,中間合金元素與熔融元素之合金之第2相及/或藉中間合金元素與取代之前述熔融元素構成之第2相。浸漬步驟係,例如,使用如圖4所示之熔融液浸漬裝置21,將帶狀矽中間合金19或線狀矽中間合金浸漬在熔融元素之熔融液23中,或使用如圖7所示之熔融液浸漬裝置或熔融液處理裝置,將粒狀矽中間合金浸漬在熔融元素之熔融液中。熔融液23係加熱至比熔融元素之液相線溫度高10K以上之溫度。浸漬至熔融液23亦隨熔融溫度而不同,但宜為5秒以上且10000秒以下。這是因為實施10000秒以上浸漬時生成粗大之Si粒。又,只有多孔質矽粒子表面之矽微粒子因長時間浸漬而異常地成長。在非 氧化性環境氣體下冷卻帶狀矽中間合金,且得到矽微粒子103、矽化合物粒子105、第2相109之複合體。 Then, the bismuth intermediate alloy is immersed in a composite element corresponding to one or more of the intermediate alloy elements described in Table 2, and each of 10 atom% or less is added, and a total of 20 atom% or less is added to the Ag corresponding to the intermediate alloy element described in Table 2. In the alloy bath made of at least one or more of the molten elements of at least one of Al, Au, Be, Bi, Cd, Ga, In, Pb, Sb, Sn, Tl, and Zn, the phase separation of Si is formed, and the Si and the composite are formed. The shape of the compound of the element, the second phase of the alloy of the intermediate alloy element and the molten element, and/or the second phase formed by the intermediate alloy element and the substituted molten element. The impregnation step is, for example, immersing the strip-shaped tantalum intermediate alloy 19 or the linear tantalum intermediate alloy in the molten material 23 of the molten element using the melt impregnation device 21 as shown in FIG. 4, or using the liquid as shown in FIG. The melt impregnation apparatus or the melt treatment apparatus immerses the granular niobium intermediate alloy in the molten liquid of the molten element. The melt 23 is heated to a temperature higher than the liquidus temperature of the molten element by 10 K or more. The immersion to the melt 23 also varies depending on the melting temperature, but is preferably 5 seconds or more and 10000 seconds or less. This is because coarse Si particles are formed when immersed for 10,000 seconds or more. Further, only the fine particles on the surface of the porous tantalum particles grow abnormally due to immersion for a long period of time. In non- The ribbon-shaped tantalum intermediate alloy is cooled under an oxidizing atmosphere, and a composite of the fine particles 103, the ruthenium compound particles 105, and the second phase 109 is obtained.

又,亦可使該矽中間合金在浸漬於對應中間合金元素之表2記載之熔融元素之浴中後,浸漬在將選自於由對應於中間合金元素之表2記載之複合體元素構成之群組之一以上之複合體元素添加各10原子%以下,且合計20原子%以下在對應於中間合金元素之表2記載之熔融元素中製成之合金浴中。 Further, the niobium intermediate alloy may be immersed in a bath of the molten element described in Table 2 corresponding to the intermediate alloy element, and then immersed in a composite element selected from the group consisting of Table 2 corresponding to the intermediate alloy element. One or more of the composite elements of the group are added in an amount of 10 atom% or less, and a total of 20 atom% or less is added to the alloy bath prepared in the molten element described in Table 2 of the intermediate alloy element.

又,在步驟(b)中,如表3所示之熔融金屬浴之金屬固有之優先成長方位為支配要因,且可控制矽微粒子之定向。此外,即使在步驟(c)中去除第2相亦可維持矽微粒子之定向。因此,藉選擇熔融金屬浴,可控制矽微粒子之定向。 Further, in the step (b), the preferential growth orientation inherent to the metal of the molten metal bath as shown in Table 3 is the dominant factor, and the orientation of the fine particles can be controlled. Further, even if the second phase is removed in the step (c), the orientation of the fine particles can be maintained. Therefore, by selecting a molten metal bath, the orientation of the ruthenium particles can be controlled.

又,雖然理由不明,但是熔融元素之成長方位係以<1010>較佳。 Further, although the reason is not clear, the growth orientation of the molten element is preferably <1010>.

圖22是顯示後述實施例1-15之步驟(b)中浸漬至熔融金屬後之矽微粒子及第2相之截面的SEM照片。看見之黑色區域係含有鉍之第2相,看見之白色地方係矽微粒子。可了解的是矽微粒子係沿圖內右上方向排列。這是因為在形成第2相時,沿鉍容易成長之結晶方位之<1010>,形成矽微粒子。 Fig. 22 is a SEM photograph showing a cross section of the fine particles and the second phase which are immersed in the molten metal in the step (b) of the first to fifth embodiments to be described later. The black area that is seen contains the second phase of the sputum, and the white areas that are seen are sputum particles. It can be understood that the 矽 microparticles are arranged in the upper right direction of the figure. This is because when the second phase is formed, the fine particles are formed along the <1010> of the crystal orientation which is easy to grow.

圖23是顯示後述實施例2-15之步驟(c)後,去除第2相後之多孔質矽粒子表面之矽微粒子之SEM照片。可了解的是扁平之圓柱狀矽微粒子係沿圖內左上方向排列。 Fig. 23 is a SEM photograph showing the fine particles of the surface of the porous tantalum particles after the second phase is removed after the step (c) of the second to fifth embodiments. It can be understood that the flat cylindrical cymbal particles are arranged in the upper left direction of the figure.

然後,與前述第一製造方法同樣地只去除第2相109,得到多孔質矽複合體粒子101。 Then, in the same manner as the first production method described above, only the second phase 109 is removed, and the porous tantalum composite particles 101 are obtained.

(多孔質矽複合體粒子之效果) (Effect of porous ruthenium complex particles)

依據本發明,可得到具有習知沒有之三維網目狀構造之多孔質矽複合體粒子。 According to the present invention, porous ruthenium complex particles having a three-dimensional network structure which is not conventionally known can be obtained.

依據本發明,可得到具有粒子全體大致均一之細孔構造之多孔質矽複合體粒子。這是因為由熔融液中之矽中間合金之矽微粒子之析出係在高溫之熔融金屬中進行,故熔融金屬浸透至粒子內部。 According to the present invention, it is possible to obtain porous tantalum composite particles having a fine pore structure in which the entire particles are substantially uniform. This is because the precipitation of the fine particles of the niobium intermediate alloy in the melt is carried out in the molten metal at a high temperature, so that the molten metal permeates into the inside of the particles.

如果本發明之多孔質矽粒子作為鋰離子電池之負極活性物質使用,可得到高容量且長壽命之負極。特別地,與矽比較,複合體元素是不易吸附鋰之元素,因此吸附鋰離子時複合體元素難以膨脹,故可抑制矽之膨脹,且可到更長壽命之負極。又,與矽比較,矽與複合體元素之化合物之矽化合物粒子導電高,因此與一般之矽粒子比 較,本發明之多孔質矽複合體粒子可因應急速之充放電。 When the porous cerium particles of the present invention are used as a negative electrode active material of a lithium ion battery, a high capacity and long life negative electrode can be obtained. In particular, compared with ruthenium, the composite element is an element which does not easily adsorb lithium. Therefore, when the lithium ion is adsorbed, the composite element is difficult to swell, so that the expansion of the ruthenium can be suppressed, and the negative electrode of a longer life can be obtained. Moreover, compared with ruthenium, the ruthenium compound particles of the compound of ruthenium and the complex element have high conductivity, and thus are compared with the general ruthenium particle ratio. In contrast, the porous tantalum composite particles of the present invention can be charged and discharged by an emergency speed.

實施例 Example

以下,使用實施例及比較例具體地說明本發明。實施例1-1至1-16係有關多孔質矽粒子之實施例,且實施例2-1至2-16係有關含有複合體元素之多孔質矽複合體粒子之實施例。 Hereinafter, the present invention will be specifically described using examples and comparative examples. Examples 1-1 to 1-16 are examples relating to porous cerium particles, and Examples 2-1 to 2-16 are examples relating to porous cerium composite particles containing a composite element.

[實施例1] [Example 1] (實施例1-1) (Example 1-1)

以Si:Co=55:45(原子%)之比率摻混矽(塊狀,純度:95.0%以上)及鈷,且將其在真空爐中於1480℃下溶解。然後,使用單輥鑄造機以冷卻速度:800K/s急冷且製作板厚200μm之矽合金製帶。將該矽合金製帶浸漬在940℃之錫熔融液中1分鐘後,立即在氬氣中急冷。藉該處理得到由Si及Co-Sn或Sn構成之第2相之2相複合體。將該2相複合體浸漬在硝酸20%水溶液中5分鐘,得到多孔質矽粒子。 Niobium (blocky, purity: 95.0% or more) and cobalt were blended at a ratio of Si:Co=55:45 (atomic %), and dissolved in a vacuum oven at 1480 °C. Then, it was rapidly cooled at a cooling rate of 800 K/s using a single roll casting machine to produce a ruthenium alloy tape having a thickness of 200 μm. The niobium alloy ribbon was immersed in a tin melt at 940 ° C for 1 minute, and immediately quenched in argon gas. By this treatment, a two-phase composite of the second phase composed of Si and Co-Sn or Sn is obtained. The two-phase composite was immersed in a 20% aqueous solution of nitric acid for 5 minutes to obtain porous cerium particles.

(實施例1-2至1-11) (Examples 1-2 to 1-11)

各實施例、比較例之製造條件係匯整在表4中。實施例1-2至1-11係以表4所示之中間合金元素、各元素之摻混比率等之製造條件,其他與實施例1-1之方法同樣地得到多孔質矽複合體粒子。 The manufacturing conditions of the respective examples and comparative examples are summarized in Table 4. In the examples 1-2 to 1-11, the porous ruthenium composite particles were obtained in the same manner as in the method of Example 1-1 except that the intermediate alloy elements shown in Table 4 and the blending ratio of each element were used.

(實施例1-12) (Examples 1-12)

以Si:Mg=12:88(原子%)之比率摻混矽(塊狀,純度:95.0%以上)及鎂,且將其在真空爐中於1090℃下溶解。然後,在鑄模內冷卻,且製作5mm見方大小之矽合金製鑄塊。 將該矽合金製鑄塊浸漬在470℃之鉛熔融液中1分鐘後,立即在氬氣中急冷。藉該處理得到由Si及Mg-Pb或Pb構成之第2相之2相複合體。將該2相複合體浸漬在硝酸20%水溶液中5分鐘,得到多孔質矽粒子。 Niobium (blocky, purity: 95.0% or more) and magnesium were blended in a ratio of Si:Mg = 12:88 (atomic %), and dissolved in a vacuum oven at 1090 °C. Then, it was cooled in a mold, and an ingot made of a 5 mm square bismuth alloy was produced. The niobium alloy ingot was immersed in a lead melt at 470 ° C for 1 minute, and then immediately quenched in argon gas. By this treatment, a two-phase composite of the second phase composed of Si and Mg-Pb or Pb is obtained. The two-phase composite was immersed in a 20% aqueous solution of nitric acid for 5 minutes to obtain porous cerium particles.

(實施例1-13至1-16) (Examples 1-13 to 1-16)

實施例1-13至1-16係以表4所示之中間合金元素、各元素之摻混比率等之製造條件,其他與實施例1-12之方法同樣地得到多孔質矽複合體粒子。 In the examples 1-13 to 1-16, the porous tantalum composite particles were obtained in the same manner as in the method of Example 1-12 except that the intermediate alloy elements shown in Table 4 and the blending ratio of each element were used.

(比較例1-1) (Comparative Example 1-1)

以Si:Mg=55:45(原子%)之比率摻混矽粉末及鎂粉末,且將其在氬環境氣體中於1087℃下溶解。然後,使用雙輥鑄造機以冷卻速度:200K/s急冷且製作板厚1mm之矽合金製狹帶。將該矽合金製狹帶浸漬在890℃之鉍熔融液中1分鐘後,立即在氬氣中急冷。將該複合體浸漬在硝酸20%水溶液中5分鐘。 The cerium powder and the magnesium powder were blended in a ratio of Si:Mg = 55:45 (atomic %), and dissolved in an argon atmosphere at 1087 °C. Then, using a twin-roll casting machine, it was rapidly cooled at a cooling rate of 200 K/s, and a tape made of a tantalum alloy having a thickness of 1 mm was produced. The tantalum alloy tape was immersed in a 890 ° C mash melt for 1 minute, and immediately quenched in argon gas. The composite was immersed in a 20% aqueous solution of nitric acid for 5 minutes.

(比較例1-2) (Comparative Example 1-2)

使用混合20wt%之氟化氫水與25wt%之硝酸之混酸,進行平均粒徑5μm之矽粒子(SIE23PB,高純度化學研究所製)之蝕刻處理,且過濾得到多孔質矽粒子。 An etch treatment of ruthenium particles (SIE23PB, manufactured by High Purity Chemical Research Laboratory Co., Ltd.) having an average particle diameter of 5 μm was carried out by mixing a mixed acid of 20 wt% of hydrogen fluoride water and 25 wt% of nitric acid, and the porous ruthenium particles were obtained by filtration.

(比較例1-3) (Comparative Example 1-3)

使用平均粒徑5μm之矽粒子(SIE23PB,高純度化學研究所製)。 Antimony particles having an average particle diameter of 5 μm (SIE23PB, manufactured by High Purity Chemical Research Laboratory) were used.

[評價] [Evaluation]

評價結果匯整在表5中。又,由於實施例1-13至1-16係 矽粒子大,故使用在研缽中粉碎變小之粒子進行特性評價。例如,實施例1-13之多孔質矽粒子之粒徑之13033係意味粉碎平均粒徑130μm之多孔質矽粒子且得到平均粒徑33μm之多孔質矽粒子。 The evaluation results are summarized in Table 5. Further, since Examples 1-13 to 1-16 were large in ruthenium particles, the particles which were pulverized and reduced in the mortar were used for evaluation of characteristics. For example, 130 of the particle size of the porous tantalum particles of Examples 1-13 33 means that porous cerium particles having an average particle diameter of 130 μm are pulverized and porous cerium particles having an average particle diameter of 33 μm are obtained.

如表5所示,各實施例之矽微粒子之平均粒徑x係2nm至2μm,且矽微粒子之粒徑之標準偏差σ係1至500nm,平均x與標準偏差σ之比(σ/x)係0.01至0.5。又,在各實施例中,平均最長徑a與平均最短徑b之比(a/b)係1.1至50。此外,矽微粒子及鄰接矽微粒子之連接部之厚度與比鄰接矽微粒子大之矽微粒子直徑之比率(連結厚度比率)係80%以下。 As shown in Table 5, the average particle diameter x of the fine particles of each example is 2 nm to 2 μm, and the standard deviation σ of the particle diameter of the fine particles is 1 to 500 nm, and the ratio of the average x to the standard deviation σ (σ/x). It is 0.01 to 0.5. Further, in each of the examples, the ratio (a/b) of the average longest diameter a to the average shortest diameter b is 1.1 to 50. Further, the ratio of the thickness of the connection portion between the fine particles and the adjacent fine particles to the diameter of the fine particles larger than the adjacent fine particles (the thickness ratio of the joint) is 80% or less.

在各實施例中,藉由利用脫成分蝕刻(去合金,dealloying)之製造方法,製作滿足申請專利範圍第1項記載之各要件之多孔質矽粒子,因此在各實施例中之50循環後容量維持率高,且循環特性良好。由於矹微粒子之粒徑均一,故充放電時之活性物質之膨脹、收縮時沒有應力集中在粒徑不均一部位,因此可推測循環特性大幅提高。 In each of the examples, the porous ruthenium particles satisfying the requirements described in the first item of the patent application range were produced by a manufacturing method using de- ing etching (dealloying), so that after 50 cycles in each of the examples The capacity retention rate is high and the cycle characteristics are good. Since the particle size of the ruthenium particles is uniform, no stress is concentrated on the uneven portion of the particle size during expansion and contraction of the active material during charge and discharge, and therefore it is estimated that the cycle characteristics are greatly improved.

各實施形態之50循環後容量維持率比比較例1-1至1-3高,且因反覆充放電造成放電容量降低之比率小,因此可預料作為電池之壽命長。 Since the capacity retention ratio after 50 cycles of each embodiment is higher than that of Comparative Examples 1-1 to 1-3, and the ratio of the discharge capacity reduction due to the reverse charge and discharge is small, it is expected that the life of the battery is long.

又,在各實施例中,負極活性物質係具有三維網目構造或連續空隙之多孔質矽粒子,因此即使產生因充放電時之Li與Si之合金化、去合金化造成之膨脹、收縮之體積變化,亦不會產生矽粒子之破裂或微粉化,且放電容量維持率高。 Further, in each of the examples, the negative electrode active material has porous ruthenium particles having a three-dimensional network structure or a continuous void, and therefore, even if it is caused by alloying and de-alloying of Li and Si during charge and discharge, the volume of expansion and contraction is caused. The change does not cause cracking or micronization of the ruthenium particles, and the discharge capacity retention rate is high.

更詳細地比較時,在比較例1-1中,在製作中間合金時純Si結晶作為初晶,且在凝固末期進一步生成共晶組織(Si與Mg2Si)。該初 晶Si係粗大至10μm左右者。該初晶即使浸漬至鉍熔融液亦不會微細化反而會粗大化,並且即使經過蝕刻步驟亦以原形狀留下。因此,Li反覆侵入、放出時,以粗大Si為首之Si單體無法配合因充放電=Li與Si之合金化、去合金化造成之膨脹、收縮之體積變化,產生破裂或崩潰,且喪失集電路徑或電極機能之比率變大,可考慮為電池壽命變短。 In a more detailed comparison, in Comparative Example 1-1, pure Si crystal was used as the primary crystal in the preparation of the intermediate alloy, and a eutectic structure (Si and Mg 2 Si) was further formed at the end of solidification. The primary Si is thick to about 10 μm. Even if the primary crystal is immersed in the cerium melt, it is not refined, but coarsened, and remains in the original shape even after the etching step. Therefore, when Li repeatedly invades and releases, the Si monomer including coarse Si cannot be combined with the volume change of expansion and contraction caused by alloying and de-alloying of Li and Si, causing cracking or collapse, and loss of set. The ratio of the electrical path or the electrode function becomes large, and it can be considered that the battery life is shortened.

在比較例1-2中,藉由氟酸或硝酸之蝕刻形成細孔構造,因此在粒子中心部形成未形成細孔之地方。該芯之部份無法配合充放電之體積變化,可考慮為循環特性不良。 In Comparative Example 1-2, since the pore structure was formed by etching with hydrofluoric acid or nitric acid, a place where pores were not formed was formed in the center portion of the particle. The part of the core cannot be matched with the volume change of charge and discharge, and it is considered that the cycle characteristics are poor.

在比較例1-3中,由於其不過是沒有細孔構造之矽粒子,故無法配合充放電之體積變化,可考慮為循環特性不良。 In Comparative Example 1-3, since it is merely a ruthenium particle having no pore structure, the volume change of charge and discharge cannot be matched, and it is considered that the cycle characteristics are poor.

(粒子形狀之評價) (Evaluation of particle shape)

使用穿透式電子顯微鏡(日本電子製JEM 3100FEF)進行多孔質矽粒子之粒子形狀之觀察。在圖11中顯示實施例1-12之粒子之SEM照片,且在圖12中顯示比較例1-1之粒子之SEM照片。在圖11中,觀察到粒徑20nm至100nm之矽微粒子互相接合且多數地聚集,並且形成多孔質矽粒子。另一方面,在圖12中,觀察到厚度5μm左右之壁狀構造。 The particle shape of the porous cerium particles was observed using a transmission electron microscope (JEM 3100FEF manufactured by JEOL Ltd.). SEM photographs of the particles of Examples 1-12 are shown in Fig. 11, and SEM photographs of the particles of Comparative Example 1-1 are shown in Fig. 12. In Fig. 11, it is observed that the ruthenium particles having a particle diameter of 20 nm to 100 nm are bonded to each other and aggregated in a large amount, and porous ruthenium particles are formed. On the other hand, in Fig. 12, a wall structure having a thickness of about 5 μm was observed.

矽微粒子之平均粒徑係藉電子顯微鏡(SEM)之影像資訊測量。又,將多孔質矽粒子分為在半徑方向50%以上之表面附近區域及在半徑方向50%以下之粒子內部區域,且計算各個平均粒徑Ds與Di之比。在實施例中,Ds/Di之值都在0.5至1.5之間,但是在藉蝕刻法得到之比較例1-2 中,與粒子內部區域比較,表面附近區域之微粒子之平均粒徑小,且Ds/Di之值變小。 The average particle size of the bismuth microparticles is measured by image information of an electron microscope (SEM). Further, the porous tantalum particles are divided into a region near the surface in the radial direction of 50% or more and a region inside the particle having a radius of 50% or less, and the ratio of the respective average particle diameters Ds to Di is calculated. In the embodiment, the value of Ds/Di is between 0.5 and 1.5, but in Comparative Example 1-2 obtained by the etching method In comparison with the inner region of the particle, the average particle diameter of the microparticles in the vicinity of the surface is small, and the value of Ds/Di becomes small.

矽微粒子與多孔質矽粒子之Si濃度係藉ICP發光光光譜分析計測量。全部都包含矽80原子%以上。 The Si concentration of the cerium microparticles and the porous cerium particles was measured by an ICP luminescence spectrometer. All contain 矽80 atom% or more.

多孔質矽粒子之平均空隙率係藉水銀壓入法(JIS R 1655)使用15mL單元測量。 The average void ratio of the porous cerium particles was measured by a mercury intrusion method (JIS R 1655) using a 15 mL unit.

又,將多孔質矽粒子分為在半徑方向50%以上之表面附近區域及在半徑方向50%以下之粒子內部區域,且藉SEM之影像資訊測量各個平均空隙率Xs與Xi。計算Xs與Xi之比。在實施例中Xs/Xi之值係在0.5至1.5之間,但是在藉蝕刻法得到之比較例1-2中,與粒子內部區域比較,表面附近區域之細孔構造發達,因此Xs/Xi之值變大。 Further, the porous tantalum particles are divided into a region near the surface in the radial direction of 50% or more and an inner region of the particles having a radius of 50% or less, and the respective average void ratios Xs and Xi are measured by the image information of the SEM. Calculate the ratio of Xs to Xi. In the examples, the value of Xs/Xi is between 0.5 and 1.5, but in Comparative Example 1-2 obtained by the etching method, the pore structure in the vicinity of the surface is developed in comparison with the internal region of the particle, so Xs/Xi The value becomes larger.

又,圖13是測量構成實施例1-12之多孔質矽粒子之矽微粒子之X光繞射光柵影像。由觀察矽結晶產生之繞射,得到點之繞射,可了解矽微粒子係由單結晶構成。 Further, Fig. 13 is an X-ray diffraction grating image for measuring the fine particles of the porous tantalum particles constituting Examples 1-12. By observing the diffraction generated by the ruthenium crystal, the diffraction of the dots is obtained, and it is understood that the ruthenium microparticles are composed of a single crystal.

(粒子用於負極時之循環特性之評價) (Evaluation of cycle characteristics when particles are used for the negative electrode) (i)負極漿液之調製 (i) Modulation of negative electrode slurry

以實施例或比較例之粒子40質量份與乙炔黑(電氣化學工業股份有限公司製)45質量份之比率投入混合器。接著分別以固形分換算5質量份及以固形分換算10質量份之比率混合苯乙烯丁二烯橡膠(SBR)40質量%之乳化劑(日本ZEON(股)製,BM400B)作為黏結劑,及羧甲基纖維素鈉(DAICEL CHEMICAL INDUSTRIES(股)製)1質量%溶液作為調整漿液之黏度之增黏劑,製作漿液。 40 parts by mass of the particles of the examples or the comparative examples were put into a mixer at a ratio of 45 parts by mass of acetylene black (manufactured by Electric Chemical Industry Co., Ltd.). Then, an emulsifier (made by ZEON Co., Ltd., BM400B) of 40 parts by mass of styrene butadiene rubber (SBR) was mixed as a binder in a ratio of 5 parts by mass of solid content to 10 parts by mass of solid content, and A 1% by mass solution of sodium carboxymethylcellulose (manufactured by DAICEL CHEMICAL INDUSTRIES) was used as a tackifier for adjusting the viscosity of the slurry to prepare a slurry.

(ii)負極之製作 (ii) Production of negative electrode

使用自動塗布裝置在厚度10μm之集電體用電解銅箔(古河電氣工業(股)製,NC-WS)上塗布10μm厚度之調製漿液,且在70℃乾燥後,經過衝壓之調厚程序,製造鋰離子電池用負極。 A 10 μm-thickness-modulated slurry was applied to an electrolytic copper foil for a current collector having a thickness of 10 μm (manufactured by Furukawa Electric Co., Ltd., NC-WS) using an automatic coating apparatus, and dried at 70 ° C, and subjected to a thickening procedure by punching. A negative electrode for a lithium ion battery is manufactured.

(iii)特性評價 (iii) Characteristic evaluation

將鋰離子電池用負極剪成20mm,且在對極與參照極上使用金屬Li,並且注入由含有1mol/L之LiPF6之乙烯碳酸酯及乙基碳酸酯之混合溶液構成之電解液,構成電化學試驗單元。又,電化學試驗單元之組裝係在露點-60℃以下之套手工作箱內進行。充放電特性之評價係藉由測量初次之放電容量及50循環之充電、放電後之放電容量,且算出放電容量之維持率進行。放電容量係以對鋰之吸附、放出有效之活性物質Si之總重量為基準算出。首先,在25℃環境下,以電流值0.1C之定電流條件進行充電,且在電壓值降低至0.02V(以參照極Li/Li+之氧化還原電位為0V基準)時停止充電。接著,在電流值0.1C之條件下,進行放電至相對參照極之電壓為1.5V,且測量0.1C初基放電容量。又,0.1C係可以10小時充滿電之電流值。接著,以在0.1C之充電放速度重覆50循環之上述充放電。以百分率求得重覆50循環充放電時之放電容量相對初始放電容量之比率,作為50循環後放電容量維持率。 Cut the lithium ion battery negative electrode into 20 mm, and a metal Li was used for the counter electrode and the reference electrode, and an electrolytic solution composed of a mixed solution of ethylene carbonate and ethyl carbonate containing 1 mol/L of LiPF 6 was injected to constitute an electrochemical test unit. Further, the assembly of the electrochemical test unit was carried out in a hand-held work box having a dew point of -60 ° C or less. The evaluation of the charge and discharge characteristics was carried out by measuring the initial discharge capacity and the discharge capacity after charging and discharging for 50 cycles, and calculating the retention rate of the discharge capacity. The discharge capacity was calculated based on the total weight of the active material Si which is effective for the adsorption and release of lithium. First, charging was performed under a constant current condition of a current value of 0.1 C in an environment of 25 ° C, and charging was stopped when the voltage value was lowered to 0.02 V (the oxidation-reduction potential of the reference Li/Li+ was 0 V). Next, under the condition of a current value of 0.1 C, the discharge was performed until the voltage with respect to the reference electrode was 1.5 V, and the 0.1 C initial-base discharge capacity was measured. In addition, the 0.1C system can fully charge the current value for 10 hours. Next, the above charge and discharge were repeated for 50 cycles at a charge discharge rate of 0.1C. The ratio of the discharge capacity to the initial discharge capacity at the time of repeating 50 cycles of charge and discharge was determined as a percentage, and the discharge capacity retention ratio after 50 cycles was obtained.

[實施例2] [Embodiment 2]

以下說明關於含有複合體元素之多孔質矽複合體粒子 之實施例2。 The following description of porous tantalum composite particles containing complex elements Example 2.

(實施例2-1) (Example 2-1)

以Si:Fe:Mg=25:5:70(原子%)之比率摻混矽粉末(塊狀 純度:95.0%以上)、鐵粉末(粒狀:2mm,純度:99.999%以上)及鎂粉末(粉末 純度:98.0%以上),且將其在氬環境氣體中於1120℃下溶解。然後,使用單輥鑄造機以冷卻速度:800K/s急冷且製作板厚40μm之矽合金製帶(步驟(a))。將該矽合金製帶浸漬在500℃之鉍熔融液中1分鐘後,立即在氬氣中急冷。藉該處理,得到矽微粒子、由Si-Fe合金構成之化合物粒子、及由Mg-Bi合金或Bi構成之第2相之複合體(步驟(b))。將該複合體浸漬在硝酸20%水溶液中5分鐘,得到多孔質矽複合體粒子(步驟(c))。 Yttrium powder (blocky purity: 95.0% or more), iron powder (granular: 2 mm, purity: 99.999% or more) and magnesium powder (in terms of Si:Fe:Mg=25:5:70 (atomic %)) Powder purity: 98.0% or more), and it was dissolved at 1,120 ° C in an argon atmosphere. Then, it was rapidly cooled at a cooling rate of 800 K/s using a single roll casting machine to prepare a bismuth alloy ribbon having a thickness of 40 μm (step (a)). The niobium alloy ribbon was immersed in a mash melt at 500 ° C for 1 minute, and immediately quenched in argon gas. By this treatment, a composite of cerium fine particles, a compound particle composed of a Si-Fe alloy, and a second phase composed of a Mg-Bi alloy or Bi (step (b)) is obtained. The composite was immersed in a 20% aqueous solution of nitric acid for 5 minutes to obtain porous ruthenium composite particles (step (c)).

(實施例2-2至2-8,2-10,2-11) (Examples 2-2 to 2-8, 2-10, 2-11)

各實施例、比較例之製造條件係匯整在表6中。實施例2-2至2-8,2-10,2-11係以表6所示之中間合金元素、各元素之摻混比率等之製造條件,其他與實施例2-1之方法同樣地得到多孔質矽複合體粒子。又,在實施例2-4中,無法形成連續帶狀之矽合金,且以1至2cm切斷,因此成為箔片狀之矽合金。實施例2-5之線狀矽中間合金中之100μm意味線狀之中間合金直徑係100μm。實施例2-8中亦同。 The manufacturing conditions of the respective examples and comparative examples are summarized in Table 6. Examples 2-2 to 2-8, 2-10, and 2-11 are the same as those of the method of Example 2-1 except for the production conditions of the intermediate alloy elements shown in Table 6, the blending ratio of each element, and the like. Porous cerium composite particles were obtained. Further, in Example 2-4, the continuous strip-shaped niobium alloy could not be formed and was cut at 1 to 2 cm, so that it was a foil-like niobium alloy. In the linear tantalum intermediate alloy of Examples 2-5 100 μm means that the linear intermediate alloy diameter is 100 μm. The same applies to Examples 2-8.

(實施例2-9) (Examples 2-9)

以Si:V:P=40:1:59(原子%)之比率摻混矽粉末、釩粉末及磷粉末,且將其在氬環境氣體中於1439℃下溶解。然後,使用氣體噴霧裝置以冷卻速度:800K/s急冷且製作 板厚40μm之粒狀矽合金(步驟(a))。將該粒狀矽合金浸漬在750℃之鎘熔融液中1分鐘後,立即在氬氣中急冷。藉該處理,得到矽微粒子、由Si與V之合金構成之矽化合物粒子、及由P-Cd合金或Cd構成之第2相之複合體(步驟(b))。將該複合體浸漬在硝酸20%水溶液中5分鐘,得到多孔質矽複合體粒子(步驟(c))。又,粒狀中間合金中之40μm意味粒狀中間合金之平均直徑係40μm。 The tantalum powder, vanadium powder and phosphorus powder were blended in a ratio of Si:V:P=40:1:59 (atomic %), and dissolved in an argon atmosphere at 1439 °C. Then, using a gas atomizing device, it was quenched at a cooling rate of 800 K/s to prepare a granular niobium alloy having a thickness of 40 μm (step (a)). The granulated niobium alloy was immersed in a cadmium melt at 750 ° C for 1 minute, and immediately quenched in argon gas. By this treatment, a composite of ruthenium fine particles, ruthenium compound particles composed of an alloy of Si and V, and a second phase composed of a P-Cd alloy or Cd is obtained (step (b)). The composite was immersed in a 20% aqueous solution of nitric acid for 5 minutes to obtain porous ruthenium composite particles (step (c)). Also, in the granular intermediate alloy 40 μm means that the average intermediate diameter of the granular intermediate alloy is 40 μm.

(實施例2-12) (Examples 2-12)

以Si:Mg=31:69(原子%)之比率摻混矽與鎂,且將其在氬環境氣體中予以溶解。然後,在鑄模內冷卻,且製作5mm見方大小之矽合金製鑄塊。將該矽合金製鑄塊浸漬在含有1原子%之砷之鉍熔融液中1分鐘後,立即在氬氣中急冷。藉該處理得到矽微粒子、由Si-As合金構成之矽化合物粒子、及由Mg-Bi合金及Bi構成之第2相之複合體。將該複合體浸漬在硝酸20%水溶液中50分鐘,得到多孔質矽複合體粒子。 Niobium and magnesium were blended in a ratio of Si:Mg = 31:69 (atomic %), and dissolved in an argon atmosphere. Then, it was cooled in a mold, and an ingot made of a 5 mm square bismuth alloy was produced. The niobium alloy ingot was immersed in a ruthenium-containing melt containing 1 atom% of arsenic for 1 minute, and immediately quenched in argon gas. By this treatment, a composite of ruthenium fine particles, ruthenium compound particles composed of a Si-As alloy, and a second phase composed of a Mg-Bi alloy and Bi is obtained. The composite was immersed in a 20% aqueous solution of nitric acid for 50 minutes to obtain porous ruthenium composite particles.

(實施例2-13至2-16) (Examples 2-13 to 2-16)

實施例2-13至2-16係以表6所示之中間合金元素、各元素之摻混比率等之製造條件,其他與實施例2-12之方法同樣地得到多孔質矽複合體粒子。又,實施例2-13、2-15、2-16係使用水冷式塊提高冷卻速度。 In the examples 2-13 to 2-16, the porous ruthenium complex particles were obtained in the same manner as in the method of Example 2-12 except that the intermediate alloy elements shown in Table 6 and the blending ratio of each element were used. Further, Examples 2-13, 2-15, and 2-16 used a water-cooled block to increase the cooling rate.

(比較例2-1) (Comparative Example 2-1)

以Si:Fe:Mg=55:1:44(原子%)之比率摻混矽粉末、鐵粉末及鎂粉末,且在真空爐中在1195℃溶解該混合物。 然後,使用銅塊鑄造,且以冷卻速度:1K/s製作5mm見方之矽合金製塊。將該矽合金製塊浸漬在930℃之鉍熔融液中200分鐘後,立即在氬氣中急冷。將該2相複合體浸漬在硝酸20%水溶液中50分鐘。本比較例不滿足式(2)之a÷(a+Y)×100≦[Si最大含量]。 The tantalum powder, iron powder and magnesium powder were blended in a ratio of Si:Fe:Mg = 55:1:44 (atomic %), and the mixture was dissolved at 1,195 ° C in a vacuum oven. Then, it was cast using a copper block, and a 5 mm square bismuth alloy block was produced at a cooling rate of 1 K/s. The niobium alloy agglomerate was immersed in a 930 ° C crucible melt for 200 minutes and then immediately quenched in argon. The 2-phase composite was immersed in a 20% aqueous solution of nitric acid for 50 minutes. This comparative example does not satisfy a ÷ (a + Y) × 100 ≦ [maximum content of Si] of the formula (2).

(比較例2-2) (Comparative Example 2-2)

以Si:Fe:Mg=25:11:64(原子%)之比率摻混矽粉末、鐵粉末及鎂粉末,且將其在真空爐中於1105℃下溶解。然後,使用銅塊鑄造,且以冷卻速度:1K/s製作5mm見方之矽合金製塊。將該矽合金製塊浸漬在410℃之鉍熔融液中10分鐘後,立即在氬氣中急冷。將該2相複合體浸漬在硝酸20%水溶液中50分鐘。本比較例不滿足式(2)之10≦a÷(a+Y)×100。 The tantalum powder, iron powder and magnesium powder were blended in a ratio of Si:Fe:Mg=25:11:64 (atomic %), and dissolved in a vacuum oven at 1105 °C. Then, it was cast using a copper block, and a 5 mm square bismuth alloy block was produced at a cooling rate of 1 K/s. The niobium alloy agglomerate was immersed in a crucible melt at 410 ° C for 10 minutes, and then immediately quenched in argon gas. The 2-phase composite was immersed in a 20% aqueous solution of nitric acid for 50 minutes. This comparative example does not satisfy 10≦a÷(a+Y)×100 of the formula (2).

(比較例2-3) (Comparative Example 2-3)

以Si:Mg=24:76(原子%)之比率摻混矽粉末及鎂粉末,且將其在真空爐中於1095℃下溶解。然後,使用水冷銅塊鑄造,且以冷卻速度:800K/s製作300μm之矽合金製帶。將該矽合金製帶浸漬在895℃之鉍熔融液85原子%與鎳15原子%之合金浴中250分鐘後,立即在氬氣中急冷。將該2相複合體浸漬在硝酸20%水溶液中50分鐘。本比較例合金浴中之單獨複合體元素濃度超過10原子%。 The cerium powder and the magnesium powder were blended in a ratio of Si:Mg = 24:76 (atomic %), and dissolved in a vacuum oven at 1095 °C. Then, it was cast using a water-cooled copper block, and a 300 μm bismuth alloy ribbon was produced at a cooling rate of 800 K/s. The niobium alloy ribbon was immersed in an alloy bath of 85 atomic percent of molten metal at 895 ° C and 15 atomic percent of nickel for 250 minutes, and immediately quenched in argon. The 2-phase composite was immersed in a 20% aqueous solution of nitric acid for 50 minutes. The concentration of the individual composite elements in the alloy bath of this comparative example exceeded 10 atom%.

(比較例2-4) (Comparative Example 2-4)

以Si:Fe=90:10(原子%)之比率摻混矽粉末及鐵粉末,且將其在真空爐中於1390℃下溶解。然後,使用單輥鑄造 機以冷卻速度:110K/s急冷且製作矽合金箔片。將該矽合金箔片浸漬在氟硝酸中10分鐘後,水洗。 The tantalum powder and iron powder were blended in a ratio of Si:Fe = 90:10 (atomic %), and dissolved in a vacuum oven at 1390 °C. Then, using single roll casting The machine was quenched at a cooling rate of 110 K/s and a crucible alloy foil was produced. The niobium alloy foil was immersed in fluoronitric acid for 10 minutes and then washed with water.

(比較例2-5) (Comparative Example 2-5)

以Si:Fe=66:34(原子%)之比率摻混矽粉末及鐵粉末,且將其在真空爐中於1250℃下溶解。然後,藉氣體噴霧裝置進行急冷凝固,且製作FeSi2金屬間化合物。將其放在篩上回收平均粒徑1至10μm之粒子。以2:1混合該粒子與平均粒徑5μm之矽粒子(SIE23PB,高純度化學研究所製),使用苯乙烯丁二烯橡膠(SBR)作為黏結劑來造粒。 The cerium powder and the iron powder were blended in a ratio of Si:Fe = 66:34 (atomic %), and dissolved in a vacuum oven at 1,250 °C. Then, it was subjected to rapid solidification by a gas atomizing device, and an FeSi 2 intermetallic compound was produced. This was placed on a sieve to recover particles having an average particle diameter of 1 to 10 μm. The particles and the cerium particles having an average particle diameter of 5 μm (SIE23PB, manufactured by High Purity Chemical Research Laboratory Co., Ltd.) were mixed at 2:1, and styrene-butadiene rubber (SBR) was used as a binder to granulate.

[評價] [Evaluation]

評價結果匯整在表7中。又,由於實施例2-13至2-16、比較例2-3係矽粒子大,故使用在研缽中粉碎變小之粒子進行特性評價。例如,實施例2-13之多孔質矽複合體粒子之平均粒徑之13033係意味粉碎平均粒徑130μm之多孔質矽複合體粒子且得到平均粒徑33μm之多孔質矽複合體粒子。 The evaluation results are summarized in Table 7. Further, in Examples 2-13 to 2-16 and Comparative Example 2-3, since the ruthenium particles were large, the particles which were pulverized and reduced in the mortar were used for the property evaluation. For example, the average particle size of the porous tantalum composite particles of Examples 2-13 is 130 The reason of 33 is to pulverize the porous ruthenium complex particles having an average particle diameter of 130 μm and obtain porous ruthenium complex particles having an average particle diameter of 33 μm.

如表7所示,各實施例之矽微粒子之平均粒徑x係2nm至2μm,且矽微粒子之粒徑之標準偏差σ係1至500nm,平均x與標準偏差σ之比(σ/x)係0.01至0.5。又,在各實施例中,平均最長徑a與平均最短徑b之比(a/b)係1.1至50。此外,矽微粒子及鄰接矽微粒子之連接部之厚度與比鄰接矽微粒子大之矽微粒子直徑之比率(連結厚度比率)係80%以下。 As shown in Table 7, the average particle diameter x of the fine particles of each example is 2 nm to 2 μm, and the standard deviation σ of the particle diameter of the fine particles is 1 to 500 nm, and the ratio of the average x to the standard deviation σ (σ/x). It is 0.01 to 0.5. Further, in each of the examples, the ratio (a/b) of the average longest diameter a to the average shortest diameter b is 1.1 to 50. Further, the ratio of the thickness of the connection portion between the fine particles and the adjacent fine particles to the diameter of the fine particles larger than the adjacent fine particles (the thickness ratio of the joint) is 80% or less.

在各實施例中,藉由利用脫成分蝕刻(去合金,dealloying)之製造方法,製作滿足申請專利範圍第9項記載之各要件之多孔質矽複合體粒子,因此在各實施例中之50循環後容量維持率高,且循環特性良好。由於矽微粒子之粒徑均一,故充放電時之活性物質之膨脹、收縮時沒有應力集中在粒徑不均一部位,因此可推測循環特性大幅提高。 In each of the examples, the porous tantalum composite particles satisfying the requirements of the ninth application of the patent application range are produced by a manufacturing method using de- ing-de- ing (dealloying), and thus 50 in each embodiment. The capacity retention rate after the cycle is high and the cycle characteristics are good. Since the particle size of the ruthenium particles is uniform, no stress is concentrated on the uneven portion of the particle size during expansion and contraction of the active material during charge and discharge, and therefore it is estimated that the cycle characteristics are greatly improved.

各實施形態之50循環後容量維持率比各比較例高,且因反覆充放電造成放電容量降低之比率小,因此可預料作為電池之壽命長。 Since the capacity retention rate after 50 cycles of each embodiment is higher than that of the respective comparative examples, and the ratio of the discharge capacity reduction due to the reverse charge and discharge is small, it is expected that the life of the battery is long.

又,在各實施例中,負極活性物質係具有三維網目構造或連續空隙之多孔質矽複合體粒子,因此即使產生因充放電時之Li與Si之合金化、去合金化造成之膨脹、收縮之體積變化,亦不會產生矽複合體粒子之破裂或微粉化,且放電容量維持率高。 Further, in each of the examples, the negative electrode active material is a porous tantalum composite particle having a three-dimensional network structure or a continuous void, and therefore, even if alloying and de-alloying of Li and Si occur during charging and discharging, expansion and contraction are caused. The volume change does not cause cracking or micronization of the ruthenium composite particles, and the discharge capacity retention rate is high.

更詳細地比較時,在比較例2-1中,在製作中間合金時純Si結晶作為初晶,且在凝固末期進一步生成共晶組織(Si與Mg2Si)。該初晶係粗大至10μm左右者。該初晶Si 即使浸漬至鉍熔融液亦不會微細化,並且即使經過蝕刻步驟亦以原形狀留下。因此,Li反覆侵入、放出時,以粗大Si為首之Si單體無法配合因充放電=Li與Si之合金化、去合金化造成之膨脹、收縮之體積變化,產生破裂或崩潰,且喪失集電路徑或電極機能之比率變大,可考慮為電池壽命變短。 In a more detailed comparison, in Comparative Example 2-1, pure Si crystal was used as the primary crystal in the preparation of the intermediate alloy, and a eutectic structure (Si and Mg 2 Si) was further formed at the end of solidification. The primary crystal system is coarsened to about 10 μm. The primary Si does not become finer even if it is immersed in the cerium melt, and remains in the original shape even after the etching step. Therefore, when Li repeatedly invades and releases, the Si monomer including coarse Si cannot be combined with the volume change of expansion and contraction caused by alloying and de-alloying of Li and Si, causing cracking or collapse, and loss of set. The ratio of the electrical path or the electrode function becomes large, and it can be considered that the battery life is shortened.

在比較例2-2中,與矽比較,複合體元素之鐵量多,且形成大部份之矽化物,因此放電容量小。 In Comparative Example 2-2, the composite element had a large amount of iron and formed a large amount of telluride as compared with ruthenium, so that the discharge capacity was small.

在比較例2-3中,浸漬之添加至熔融液中之複合體元素之Ni量多,且形成大部份之矽化物,因此放電容量小。 In Comparative Example 2-3, the amount of Ni added to the composite element in the molten metal was large, and a large amount of telluride was formed, so that the discharge capacity was small.

圖24是比較例2-4之多孔質矽粒子之表面之SEM照片。觀察到多數粒徑1至2μm之粒子。 Fig. 24 is a SEM photograph of the surface of the porous cerium particles of Comparative Example 2-4. Most particles having a particle size of 1 to 2 μm were observed.

在比較例2-4中,藉由氟酸或硝酸之蝕刻形成細孔構造,因此在粒子中心部形成未形成細孔之地方。該芯之部份無法配合充放電之體積變化,可考慮為循環特性不良。 In Comparative Example 2-4, since the pore structure was formed by etching with hydrofluoric acid or nitric acid, a place where pores were not formed was formed in the center portion of the particle. The part of the core cannot be matched with the volume change of charge and discharge, and it is considered that the cycle characteristics are poor.

在比較例2-5中,由於只不過是沒有細孔構造之矽粒子,故無法配合充放電之體積變化,可考慮為循環特性不良。 In Comparative Example 2-5, since only the ruthenium particles having no pore structure were formed, the volume change of charge and discharge could not be matched, and it was considered that the cycle characteristics were poor.

(粒子形狀之評價) (Evaluation of particle shape)

使用穿透式電子顯微鏡(日本電子製JEM 3100FEF)進行多孔質矽複合體粒子之粒子形狀之觀察。在圖14中顯示實施例2-1之粒子之SEM照片,在圖15中顯示實施例2-1之粒子內部之截面之SEM照片,且在圖16中顯示實施例2-1之粒子表面之SEM照片。在圖14、圖15中,觀察到粒徑20nm至 50nm之矽微粒子互相接合且多數地聚集,並且形成多孔質矽複合體粒子。又,在圖14與圖15中,觀察到空隙率或矽微粒子之粒徑沒有大的差。在圖16中,觀察到小矽粒子接合在大矽化物之粒子上。 The particle shape of the porous tantalum composite particles was observed using a transmission electron microscope (JEM 3100FEF manufactured by JEOL Ltd.). An SEM photograph of the particles of Example 2-1 is shown in Fig. 14, and an SEM photograph of the inside of the particle of Example 2-1 is shown in Fig. 15, and the surface of the particle of Example 2-1 is shown in Fig. 16. SEM photo. In Fig. 14 and Fig. 15, a particle size of 20 nm was observed to The fine particles of 50 nm are bonded to each other and aggregated in a large amount, and porous ruthenium complex particles are formed. Further, in Fig. 14 and Fig. 15, it was observed that there was no large difference in the void ratio or the particle diameter of the fine particles. In Fig. 16, it was observed that the small ruthenium particles were bonded to the particles of the large ruthenium compound.

圖17是構成矽複合體粒子之矽微粒子之X光繞射光柵影像。觀察到由矽之結晶產生之點,可了解矽微粒子係單結晶。 Fig. 17 is an X-ray diffraction grating image constituting the fine particles of the ruthenium composite particles. It is observed that the ruthenium microcrystals are single crystals from the point where the crystals of ruthenium are produced.

矽微粒子之平均粒徑係藉電子顯微鏡(SEM)之影像資訊測量。將多孔質矽複合體粒子分為在半徑方向50%以上之表面附近區域及在半徑方向50%以內之粒子內部區域,且由各個SEM照片,求得各個平均粒徑Ds與Di,且計算該等Ds與Di之比。在實施例中,Ds/Di之值都在0.5至1.5之間,但是在藉蝕刻法得到之比較例2-4中,與粒子內部區域比較,表面附近區域之微粒子之平均粒徑小,且Ds/Di之值變小。多孔質矽複合體粒子之平均粒徑係使用併用前述之SEM觀察與DLS。 The average particle size of the bismuth microparticles is measured by image information of an electron microscope (SEM). The porous tantalum composite particles are divided into a region near the surface in the radial direction of 50% or more and an inner region of the particles in the radial direction within 50%, and each of the average particle diameters Ds and Di is obtained from each SEM photograph, and the calculation is performed. Wait for the ratio of Ds to Di. In the embodiment, the value of Ds/Di is between 0.5 and 1.5, but in Comparative Example 2-4 obtained by the etching method, the average particle diameter of the microparticles in the vicinity of the surface is small as compared with the inner region of the particle, and The value of Ds/Di becomes smaller. The average particle diameter of the porous cerium composite particles was measured by using the aforementioned SEM observation and DLS.

矽微粒子之Si濃度及多孔質矽複合體粒子之Si與複合體元素之濃度等係藉ICP發光光光譜分析計測量。不論在任一實施例中,矽微粒子都包含矽80原子%以上。 The Si concentration of the fine particles and the concentration of Si and the composite element of the porous tantalum composite particles are measured by an ICP emission spectrometer. In either embodiment, the ruthenium microparticles contain 矽80 at% or more.

多孔質矽複合體粒子之平均空隙率係藉水銀壓入法(JIS R 1655)使用15mL單元測量。 The average void ratio of the porous tantalum composite particles was measured by a mercury intrusion method (JIS R 1655) using a 15 mL unit.

又,將多孔質矽複合體粒子分為在半徑方向50%以上之表面附近區域及在半徑方向50%以下之粒子內部區域,且藉表面掃描式電子顯微鏡觀察各個區域內之任意地 方,且求得各個平均空隙率之Xs與Xi,並且計算Xs與Xi之比。在實施例中Xs/Xi之值係在0.5至1.5之間,但是在藉蝕刻法得到之比較例2-4中,與粒子內部區域比較,表面附近區域之細孔構造發達,因此Xs/Xi之值變大。 Further, the porous tantalum composite particles are divided into a region near the surface in the radial direction of 50% or more and an inner region of the particles having a radius of 50% or less, and any of the regions are observed by a surface scanning electron microscope. Square, and Xs and Xi of each average void ratio are obtained, and the ratio of Xs to Xi is calculated. In the examples, the value of Xs/Xi is between 0.5 and 1.5, but in Comparative Example 2-4 obtained by the etching method, the pore structure in the vicinity of the surface is developed in comparison with the internal region of the particle, so Xs/Xi The value becomes larger.

(粒子用於負極時之循環特性之評價) (Evaluation of cycle characteristics when particles are used for the negative electrode)

除了放電容量係以矽化物及對鋰之吸附、放出有效之活性物質Si之總重量為基準算出以外,與實施例1同樣地評價循環特性。 The cycle characteristics were evaluated in the same manner as in Example 1 except that the discharge capacity was calculated based on the total weight of the bismuth compound and the active material Si which was adsorbed and released.

[實施例3] [Example 3] (實施例3-1) (Example 3-1)

使用與實施例1同樣之程序且變更由步驟(a)至(c)之各種條件,且使矽合金微粒子之粒徑、形狀、分布變化。特別地變更在步驟(b)中之浸漬溫度、時間。又,對步驟(b)之熔融金屬浴賦予機械攪拌(攪拌能量)或振動(振幅:1mm×60Hz)。該等條件顯示在表8中。又,與實施例1同樣地對藉該製法得到之多孔質矽粒子及矽微粒子進行評價之結果顯示在表9中。 The conditions of the steps (a) to (c) were changed using the same procedure as in Example 1, and the particle size, shape, and distribution of the bismuth alloy fine particles were changed. The immersion temperature and time in the step (b) are specifically changed. Further, mechanical stirring (stirring energy) or vibration (amplitude: 1 mm × 60 Hz) was applied to the molten metal bath of the step (b). These conditions are shown in Table 8. Further, the results of evaluation of the porous tantalum particles and the fine particles obtained by the production method in the same manner as in Example 1 are shown in Table 9.

相對於在各比較例中50循環後容量維持率低於80%,在各實施例中50循環後容量維持率大於80%。 The capacity retention ratio was less than 80% after 50 cycles in each of the comparative examples, and the capacity retention ratio after 50 cycles was more than 80% in each of the examples.

各實施例之矽微粒子之平均粒徑x係2nm至2μm,且矽微粒子之粒徑之標準偏差σ係1至500nm,平均x與標準偏差σ之比(σ/x)係0.01至0.5。又,在各實施例中,平均最長徑a與平均最短徑b之比(a/b)係1.1至50。此外,矽微粒子及鄰接矽微粒子之連接部之厚度與比鄰接矽微粒子大之矽微粒子直徑之比率(連結厚度比率)係80%以下。 The average particle diameter x of the fine particles of each of the examples is 2 nm to 2 μm, and the standard deviation σ of the particle diameter of the fine particles is 1 to 500 nm, and the ratio (σ/x) of the average x to the standard deviation σ is 0.01 to 0.5. Further, in each of the examples, the ratio (a/b) of the average longest diameter a to the average shortest diameter b is 1.1 to 50. Further, the ratio of the thickness of the connection portion between the fine particles and the adjacent fine particles to the diameter of the fine particles larger than the adjacent fine particles (the thickness ratio of the joint) is 80% or less.

圖18是實施例3-7之多孔質矽粒子之SEM照片。可了解的是直徑30nm左右之矽微粒子係多數地聚集。 Figure 18 is a SEM photograph of porous cerium particles of Example 3-7. It can be understood that the fine particles of about 30 nm in diameter are mostly aggregated.

又,圖19是構成實施例3-7之多孔質矽粒子之矽微粒子之TEM照片。矽微粒子之平均粒徑x係28.6nm,標準偏差σ係5.3nm,且σ/x=0.19。可了解的是粒徑均一,又,矽微粒子間係藉粗連接接合。 Further, Fig. 19 is a TEM photograph of ruthenium fine particles constituting the porous ruthenium particles of Example 3-7. The average particle diameter x of the fine particles was 28.6 nm, the standard deviation σ was 5.3 nm, and σ/x = 0.19. It can be understood that the particle size is uniform, and the yttrium particles are joined by a coarse joint.

圖20是形成實施例3-7之多孔質矽粒子之矽微粒子之粒度分布。一個一個之矽微粒子係扁平之球狀粒子,且該等粒子接合形成,因此可了解的是分布不是正規分布。 Figure 20 is a particle size distribution of the fine particles of the porous tantalum particles of Examples 3-7. One by one, the microparticles are flat spherical particles, and the particles are joined to form, so it is understood that the distribution is not a regular distribution.

圖21是構成實施例3-8之多孔質矽粒子之矽微粒子之TEM照片,且左上係在藉TEM之觀察區域中之限制視野電子束繞射影像。在TEM照片中,可了解的是在一個矽微粒子內沒有晶界,是單結晶。又,觀察到在限制視野電子束繞射影像中,由矽之結晶產生之點,可了解矽微粒子仍是單結晶。又,該矽微粒子呈扁平之球狀,長軸徑係36nm,且短軸徑係27nm。此外,取多數矽微粒子之平均, 平均最短徑a係36nm,平均最短徑b係27nm,且a/b=1.33。 Fig. 21 is a TEM photograph of the ruthenium microparticles constituting the porous ruthenium particles of Example 3-8, and the upper left is a limited-field electron beam diffraction image in the observation region by the TEM. In the TEM photograph, it is understood that there is no grain boundary in a ruthenium particle and it is a single crystal. Further, it has been observed that in the limited-view electron beam diffraction image, it is understood that the ruthenium microparticle is still a single crystal. Further, the fine particles of the crucible have a flat spherical shape, a major axis diameter of 36 nm, and a short axis diameter of 27 nm. In addition, taking the average of most of the fine particles, The average shortest diameter a is 36 nm, the average shortest diameter b is 27 nm, and a/b = 1.33.

圖25是實施例3-1之多孔質矽粒子之SEM照片。觀察到成長成多角柱狀之多數矽微粒子。平均支柱徑x係203.6nm,標準偏差σ係80.6nm,且σ/x係0.40。 Figure 25 is a SEM photograph of porous cerium particles of Example 3-1. Most of the fine particles that grew into a polygonal column were observed. The average pillar diameter x is 203.6 nm, the standard deviation σ is 80.6 nm, and σ/x is 0.40.

圖26是實施例3-2之多孔質矽粒子之SEM照片。觀察到支柱徑20nm左右之成長成多角柱狀之多數矽微粒子。 Figure 26 is a SEM photograph of the porous ruthenium particles of Example 3-2. A large number of fine particles having a pillar diameter of about 20 nm and growing into a polygonal column shape were observed.

圖27是實施例3-3之多孔質矽粒子之SEM照片。觀察到大幅地成長之多數矽微粒子。平均粒徑x係694.0nm,標準偏差σ係231.7nm,且σ/x係0.33。又,由於長時間浸漬,故矽合金表面之矽微粒子徑變大且其比Es/Ei成為1.08。 Figure 27 is a SEM photograph of the porous ruthenium particles of Example 3-3. Most of the fine particles that have grown substantially are observed. The average particle diameter x is 694.0 nm, the standard deviation σ is 231.7 nm, and σ/x is 0.33. Further, since the immersion of the ruthenium alloy surface on the surface of the ruthenium alloy was large due to immersion for a long period of time, the ratio of Es/Ei was 1.08.

圖28是實施例1-15之中間合金之微組織照片。 Figure 28 is a photograph of the microstructure of the intermediate alloy of Examples 1-15.

以上,雖已一面參照添附圖式,一面說明本發明之較佳實施形態,但是本發明不受限於該例。可了解的是只要是所屬技術領域中具有通常知識者,就可在本申請案揭示之技術思想範疇中,想到各種變化例或修改例,且該等變化例或修改例亦當然屬於本發明之技術範圍。 The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but the invention is not limited thereto. It is to be understood that various modifications and changes can be made in the technical scope of the present disclosure as long as they are the ones of ordinary skill in the art, and such variations or modifications are of course Technical scope.

產業上之可利用性 Industrial availability

本發明之多孔質矽複合體粒子不僅可用於鋰離子電池之負極,亦可使用作為鋰離子電容器之負極、太陽電池、發光材料、過濾用素材。 The porous tantalum composite particles of the present invention can be used not only as a negative electrode of a lithium ion battery but also as a negative electrode of a lithium ion capacitor, a solar cell, a light-emitting material, and a material for filtration.

1‧‧‧多孔質矽粒子 1‧‧‧Porous porous particles

I‧‧‧粒子內部區域 I‧‧‧particle interior area

3‧‧‧矽微粒子 3‧‧‧矽Microparticles

S‧‧‧表面附近區域 S‧‧‧ Area near the surface

Claims (18)

一種多孔質矽粒子,係多數矽微粒子接合而具有連續空隙者,其特徵在於:前述矽微粒子之粒徑、支柱徑或支柱邊的平均x係2nm至2μm,且前述矽微粒子之粒徑、支柱徑或支柱邊的標準偏差σ係1至500nm,又,前述平均x與前述標準偏差σ之比(σ/x)係0.01至0.5。 A porous ruthenium particle having a plurality of ruthenium microparticles joined to each other and having a continuous void, wherein the particle diameter of the ruthenium microparticles, the pillar diameter or the average x of the pillar side is 2 nm to 2 μm, and the particle size of the ruthenium microparticles and the pillar The standard deviation σ of the diameter or the pillar side is 1 to 500 nm, and the ratio (σ/x) of the aforementioned average x to the aforementioned standard deviation σ is 0.01 to 0.5. 如申請專利範圍第1項之多孔質矽粒子,其中前述矽微粒子之形狀具有扁平球狀、圓柱狀或多角柱狀,且平均最長徑或最長邊a與平均最短徑或最短邊b之比(a/b)係1.1至50。 The porous tantalum particle according to claim 1, wherein the shape of the tantalum fine particles has a flat spherical shape, a cylindrical shape or a polygonal column shape, and an average longest diameter or a ratio of the longest side a to the average shortest diameter or the shortest side b ( a/b) is from 1.1 to 50. 如申請專利範圍第1項之多孔質矽粒子,其中前述多孔質矽粒子之平均粒徑係0.1μm至1000μm,且前述多孔質矽粒子之平均空隙率係15至93%;又,前述多孔質矽粒子之在半徑方向上50%以上之表面附近區域的前述矽微粒子之平均粒徑Ds,與前述多孔質矽粒子之在半徑方向上50%以內之粒子內部區域的前述矽微粒子之平均粒徑Di之比Ds/Di係0.5至1.5;且前述多孔質矽粒子之在半徑方向上50%以上之表面附近區域的空隙率Xs,與前述多孔質矽粒子之在半徑方向上50%以內之粒子內部區域的空隙率Xi之比Xs/Xi係0.5至1.5; 又,以除了氧以外之元素之比率計含有矽80原子%以上。 The porous tantalum particle according to the first aspect of the invention, wherein the porous niobium particles have an average particle diameter of 0.1 μm to 1000 μm, and the porous niobium particles have an average void ratio of 15 to 93%; The average particle diameter Ds of the ruthenium particles in the vicinity of the surface of the ruthenium particle in the radial direction of 50% or more, and the average particle diameter of the ruthenium particles in the internal region of the particle within 50% of the radius of the porous ruthenium particle a ratio of Di of Ds/Di of 0.5 to 1.5; and a porosity Xs of a region near the surface of the porous cerium particle which is 50% or more in the radial direction, and a particle of 50% or less in the radial direction of the porous cerium particle The ratio of the void ratio Xi of the inner region is Xs/Xi of 0.5 to 1.5; Further, 矽80 atom% or more is contained in a ratio of elements other than oxygen. 如申請專利範圍第1項之多孔質矽粒子,其將前述多孔質矽粒子分為在半徑方向90%以上之表面附近區域S、及在半徑方向90%以下之粒子內部區域I,且令構成前述表面附近區域S之前述矽微粒子的平均粒徑為Es,並且令構成前述粒子內部區域I之前述矽微粒子的平均粒徑為Ei時,Es/Ei係0.01至1.0。 The porous tantalum particle according to the first aspect of the invention, wherein the porous tantalum particle is divided into a region S near the surface in the radial direction of 90% or more, and an inner region I of the particle in the radial direction of 90% or less. The average particle diameter of the fine particles of the surface in the vicinity of the surface S is Es, and when the average particle diameter of the fine particles of the fine particles constituting the internal region I of the particle is Ei, Es/Ei is 0.01 to 1.0. 如申請專利範圍第1項之多孔質矽粒子,其中前述矽微粒子係實心矽微粒子,且特徵在於係以除了氧以外之元素之比率計含有矽80原子%以上。 The porous tantalum particles according to the first aspect of the invention, wherein the fine particles of the fine particles are solid fine particles, and are characterized by containing 原子80 atom% or more in a ratio of elements other than oxygen. 如申請專利範圍第1項之多孔質矽粒子,其中前述矽微粒子間之接合部的面積係前述矽微粒子之表面積的30%以下。 The porous tantalum particles according to claim 1, wherein the area of the joint between the fine particles of the fine particles is 30% or less of the surface area of the fine particles. 如申請專利範圍第1項之多孔質矽粒子,其中在前述矽微粒子及鄰接之前述矽微粒子之接合部中,前述接合部之厚度或直徑係比鄰接之前述矽微粒子大之矽微粒子直徑的80%以下,且前述接合部係藉結晶性矽或矽氧化物構成。 The porous tantalum particle according to claim 1, wherein in the joint portion of the tantalum fine particles and the adjacent fine particles, the thickness or diameter of the joint portion is larger than the diameter of the fine particles of the adjacent fine particles. % or less, and the joint portion is composed of a crystalline ruthenium or osmium oxide. 如申請專利範圍第2項之多孔質矽粒子,其中多數前述矽微粒子係呈定向,且多數前述矽微粒子之長軸方向均在某方向之±30°以內。 In the porous ruthenium particles of claim 2, most of the ruthenium microparticles are oriented, and the long axis directions of most of the ruthenium microparticles are within ±30° of a certain direction. 一種多孔質矽複合體粒子,係多數矽微粒子與多數矽化合物粒子接合,而具有連續空隙者,其特徵在於: 前述矽化合物粒子包含矽,與選自於由As、Ba、Ca、Ce、Co、Cr、Cu、Er、Fe、Gd、Hf、Lu、Mg、Mn、Mo、Nb、Nd、Ni、Os、Pr、Pt、Pu、Re、Rh、Ru、Sc、Sm、Sr、Ta、Te、Th、Ti、Tm、U、V、W、Y、Yb、Zr構成之群組中1種以上之複合體元素的化合物;且前述矽微粒子之粒徑、支柱徑或支柱邊之平均x係2nm至2μm,前述矽微粒子之粒徑、支柱徑或支柱邊之標準偏差σ係1至500nm,又前述平均x與前述標準偏差σ之比(σ/x)係0.01至0.5。 A porous ruthenium composite particle, which is characterized in that a plurality of ruthenium particles are joined to a plurality of ruthenium compound particles and have continuous voids, and are characterized by: The ruthenium compound particles comprise ruthenium and are selected from the group consisting of As, Ba, Ca, Ce, Co, Cr, Cu, Er, Fe, Gd, Hf, Lu, Mg, Mn, Mo, Nb, Nd, Ni, Os, a complex of one or more of the group consisting of Pr, Pt, Pu, Re, Rh, Ru, Sc, Sm, Sr, Ta, Te, Th, Ti, Tm, U, V, W, Y, Yb, and Zr a compound of an element; and an average x of the particle diameter of the ruthenium particle, a pillar diameter or a pillar edge of 2 nm to 2 μm, a particle diameter of the ruthenium microparticle, a standard deviation of a pillar diameter or a pillar edge σ of 1 to 500 nm, and an average of x The ratio (σ/x) to the aforementioned standard deviation σ is 0.01 to 0.5. 如申請專利範圍第9項之多孔質矽複合體粒子,其中前述矽微粒子之形狀具有扁平球狀、圓柱狀或多角柱狀,且平均最長徑或最長邊a與平均最短徑或最短邊b之比(a/b)係1.1至50。 The porous tantalum composite particle according to claim 9, wherein the shape of the tantalum fine particles has a flat spherical shape, a cylindrical shape or a polygonal column shape, and an average longest diameter or a longest side a and an average shortest diameter or a shortest side b The ratio (a/b) is 1.1 to 50. 如申請專利範圍第9項之多孔質矽複合體粒子,其中前述多孔質矽複合體粒子之平均粒徑係0.1μm至1000μm。 The porous tantalum composite particles according to claim 9, wherein the porous tantalum composite particles have an average particle diameter of 0.1 μm to 1000 μm. 如申請專利範圍第9項之多孔質矽複合體粒子,其中前述矽微粒子係以除了氧以外之元素之比率計含有矽80原子%以上之實心矽微粒子。 The porous ruthenium complex particles according to claim 9, wherein the ruthenium fine particles contain 矽80 atom% or more of solid ruthenium fine particles in a ratio of elements other than oxygen. 如申請專利範圍第9項之多孔質矽複合體粒子,其中前述矽化合物粒子之平均粒徑係50nm至50μm,且前述矽化合物粒子係特徵在於以除了氧以外之元素之比率計含有50至90原子%之矽的實心矽化合物粒子。 The porous ruthenium complex particles according to claim 9, wherein the ruthenium compound particles have an average particle diameter of 50 nm to 50 μm, and the ruthenium compound particles are characterized by containing 50 to 90 at a ratio of elements other than oxygen. A solid bismuth compound particle with an atomic %. 如申請專利範圍第9項之多孔質矽複合體粒子,其中前述多孔質矽複合體粒子之在半徑方向上50%以上之表面附近區域的前述矽微粒子之平均粒徑Ds,與前述多孔質矽複合體粒子之在半徑方向上50%以內之粒子內部區域的前述矽微粒子之平均粒徑Di之比Ds/Di係0.5至1.5。 The porous tantalum composite particle according to the ninth aspect of the invention, wherein the porous niobium composite particles have an average particle diameter Ds of the niobium fine particles in a region near the surface of 50% or more in the radial direction, and the porous crucible The ratio Ds/Di of the average particle diameter Di of the above-mentioned cerium fine particles in the inner region of the particles within 50% of the composite particles in the radial direction is 0.5 to 1.5. 如申請專利範圍第9項之多孔質矽複合體粒子,其中前述多孔質矽複合體粒子之在半徑方向上50%以上之表面附近區域的空隙率Xs,與前述多孔質矽複合體粒子之在半徑方向上50%以內之粒子內部區域的空隙率Xi之比Xs/Xi係0.5至1.5。 The porous tantalum composite particle according to the ninth aspect of the invention, wherein the void ratio Xs of the region near the surface of the porous tantalum composite particle in the radial direction of 50% or more is in contact with the porous tantalum composite particle. The ratio of the void ratio Xi of the inner region of the particles within 50% in the radial direction is Xs/Xi of 0.5 to 1.5. 如申請專利範圍第9項之多孔質矽複合體粒子,其將前述多孔質矽複合體粒子分為在半徑方向90%以上之表面附近區域S、及在半徑方向90%以下之粒子內部區域I,且令構成前述表面附近區域S之前述矽微粒子的平均粒徑為Es,並且令構成前述粒子內部區域I之前述矽微粒子的平均粒徑為Ei時,Es/Ei係0.01至1.0。 The porous tantalum composite particle according to the ninth aspect of the invention, wherein the porous tantalum composite particle is divided into a surface vicinity region S in the radial direction of 90% or more and an internal region I of the particle in the radial direction of 90% or less. Further, when the average particle diameter of the fine particles of the fine particles constituting the surface vicinity S is Es, and the average particle diameter of the fine particles of the fine particles constituting the internal region I of the particles is Ei, Es/Ei is 0.01 to 1.0. 如申請專利範圍第9項之多孔質矽複合體粒子,其中在前述矽微粒子及鄰接之前述矽微粒子之接合部中,前述接合部之厚度或直徑係比鄰接之前述矽微粒子大之矽微粒子直徑的80%以下,且前述接合部係藉結晶性矽或矽氧化物構成。 The porous tantalum composite particle according to claim 9, wherein in the joint portion of the tantalum fine particles and the adjacent fine particles, the thickness or diameter of the joint portion is larger than the diameter of the adjacent fine particles. 80% or less, and the joint portion is composed of a crystalline niobium or tantalum oxide. 如申請專利範圍第10項之多孔質矽複合體粒子,其中多數前述矽微粒子係呈定向,且多數前述矽微粒子之長軸方向均在某方向之±30° 以內。 The porous tantalum composite particles according to claim 10, wherein the plurality of the fine particles of the tantalum are oriented, and the long axis direction of the plurality of the fine particles is ±30° in a certain direction. Within.
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