TW201342558A - Ag-based alloy bonding wire for semiconductor package - Google Patents
Ag-based alloy bonding wire for semiconductor package Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
Abstract
Description
本發明有關於半導體封裝，特別是有關於用於導線焊接的含銀合金導線。 This invention relates to semiconductor packages, and more particularly to silver-containing alloy wires for wire bonding.
半導體封裝中，可使用導線焊接法將半導體晶片電性連接至封裝基板。在習知的半導體封裝中，使用金(Au)導線將半導體晶片的鋁墊和封裝基板焊接在一起。由於金具有很高的化學穩定性和導電性而一直被廣泛使用。然而，為滿足半導體產業對降低製造成本的不斷追求，以及應對金價的成本上漲，需要一種新的導線代替金。 In a semiconductor package, a semiconductor wafer can be electrically connected to a package substrate using a wire bonding method. In a conventional semiconductor package, an aluminum pad of a semiconductor wafer and a package substrate are soldered together using a gold (Au) wire. Gold has been widely used because of its high chemical stability and electrical conductivity. However, in order to meet the semiconductor industry's constant pursuit of reducing manufacturing costs and to cope with the rising cost of gold, a new wire is needed instead of gold.
例如，日本專利申請案早期公開第1998-326803、1999-67811、1999-67812和2000-150562號揭露一種金銀合金導線。然而，該金銀合金導線仍包括金，導致成本降低十分有限。 For example, a gold-silver alloy wire is disclosed in Japanese Patent Application Laid-Open No. Hei. Nos. 1998-326803, 1999-67811, 1999-67812, and No. 2000-150562. However, the gold-silver alloy wire still includes gold, resulting in a very limited cost reduction.
銀導線相較習知金導線可節省成本30%至50%，可作為另一選擇。然而，銀導線焊接至鋁(Al)墊時存在可靠性方面的 問題。尤其如圖1所示，進行高濕度環境下可靠性測試時，銀導線和鋁墊的焊接面最易發生腐蝕，或出現晶片裂紋從而嚴重削弱焊接強度。高濕度環境可靠性測試通常使用壓力鍋測試法(PCT)進行。PCT測試中，即使在96小時後，金導線焊接強度仍變化不大。而銀導線之焊接強度在PCT中僅24小時後即接近為零。 Silver wire can save 30% to 50% compared with conventional gold wire, which can be used as an alternative. However, there is reliability in the soldering of silver wires to aluminum (Al) pads. problem. In particular, as shown in Fig. 1, when the reliability test is performed in a high-humidity environment, the soldered faces of the silver wires and the aluminum pads are most likely to be corroded, or wafer cracks occur to seriously weaken the soldering strength. High humidity environmental reliability testing is typically performed using the Pressure Cooker Test (PCT). In the PCT test, the weld strength of the gold wire did not change much even after 96 hours. The soldering strength of the silver wire is close to zero after only 24 hours in the PCT.
此外，銀具有塑性差的缺點，影響產品良率。因此，銀導線之製造需要進行若干熱退火程序，以致增加製造成本。 In addition, silver has the disadvantage of poor plasticity, which affects product yield. Therefore, the manufacture of silver wires requires several thermal annealing procedures to increase manufacturing costs.
本發明提供可靠性高且製造成本低廉的半導體封裝之含銀合金導線。 The present invention provides a silver-containing alloy wire of a semiconductor package having high reliability and low manufacturing cost.
在本發明之一實施例中，提供一種半導體封裝之含銀合金焊接導線，用以將半導體晶片焊接至封裝基板，所述半導體封裝之含銀合金焊接導線實質上由重量含量為0.05%~5%的至少一種由下列元素所構成的族群中選出之第一添加劑：鉑(Pt)、鈀(Pd)、銠(Rh)、鋨(Os)與金(Au)；重量含量為3ppm~100ppm的至少一種由下列元素所構成的族群中選出之第二添加劑：鈹(Be)、鈣(Ca)、鋇(Ba)、鑭(La)、鈰(Ce)與釔(Y)；以及其餘的銀所構成。 In an embodiment of the present invention, a silver-containing alloy soldering wire for a semiconductor package is provided for soldering a semiconductor wafer to a package substrate, wherein the silver-containing alloy solder wire of the semiconductor package is substantially 0.05% to 5 by weight. At least one of the first additives selected from the group consisting of platinum (Pt), palladium (Pd), rhodium (Rh), osmium (Os) and gold (Au); weight content of 3 ppm to 100 ppm At least one second additive selected from the group consisting of bismuth (Be), calcium (Ca), barium (Ba), lanthanum (La), cerium (Ce), and yttrium (Y); and the remaining silver Composition.
在本發明之一實施例中，所述第一添加劑包括重量含量為0.05%~5%的由鈀(Pd)、銠(Rh)與鋨(Os)所構成的族群中選出的至少一者，且所述第二添加劑包括重量含量為 3ppm~100ppm的由鈹(Be)、鈣(Ca)、鋇(Ba)、鑭(La)、鈰(Ce)與釔(Y)所構成的族群中選出的至少一者。 In an embodiment of the invention, the first additive comprises at least one selected from the group consisting of palladium (Pd), rhodium (Rh) and strontium (Os) in a weight content of 0.05% to 5%. And the second additive comprises a weight content of 3 ppm to 100 ppm of at least one selected from the group consisting of beryllium (Be), calcium (Ca), barium (Ba), strontium (La), cerium (Ce), and cerium (Y).
在本發明之一實施例中，提供一種半導體封裝之含銀合金焊接導線，用以將半導體晶片焊接至封裝基板，所述半導體封裝之含銀合金焊接導線實質上由重量含量為0.05%~5%的至少一種由鉑(Pt)、銠(Rh)、鋨(Os)與金(Au)所構成的族群中選出的第一添加劑、重量含量為3ppm~5%的至少一種由鈹(Be)、鈣(Ca)、鋇(Ba)、鑭(La)、鈰(Ce)與釔(Y)所構成的族群中選出的第二添加劑以及其餘的銀所構成。 In an embodiment of the present invention, a silver-containing alloy soldering wire for a semiconductor package is provided for soldering a semiconductor wafer to a package substrate, wherein the silver-containing alloy solder wire of the semiconductor package is substantially 0.05% to 5 by weight. At least one of the first additives selected from the group consisting of platinum (Pt), rhodium (Rh), osmium (Os), and gold (Au), and at least one type of bismuth (Be) having a weight content of 3 ppm to 5% A second additive selected from the group consisting of calcium (Ca), barium (Ba), barium (La), cerium (Ce) and cerium (Y), and the remaining silver.
在本發明之一實施例中，提供一種半導體封裝之含銀合金焊接導線，用以將半導體晶片焊接至封裝基板，所述半導體封裝之含銀合金焊接導線實質上由重量含量為0.05%~5%的至少一種由銠(Rh)、鋨(Os)與金(Au)所構成的族群中選出的第一添加劑以及重量含量為3ppm~5%的至少一種由銅(Cu)、鈹(Be)、鈣(Ca)、鋇(Ba)、鑭(La)、鈰(Ce)與釔(Y)所構成的族群中選出的第二添加劑所構成。 In an embodiment of the present invention, a silver-containing alloy soldering wire for a semiconductor package is provided for soldering a semiconductor wafer to a package substrate, wherein the silver-containing alloy solder wire of the semiconductor package is substantially 0.05% to 5 by weight. % of at least one selected from the group consisting of rhodium (Rh), osmium (Os) and gold (Au), and at least one of 3 ppm to 5% by weight of copper (Cu), bismuth (Be) A second additive selected from the group consisting of calcium (Ca), barium (Ba), lanthanum (La), cerium (Ce), and cerium (Y).
上述的重量含量%或重量含量ppm是以百分比或百萬分比為單位表示的所述試劑之重量占總重量之比例。 The above-mentioned weight content % or weight content ppm is a ratio of the weight of the reagent to the total weight expressed in units of percentage or parts per million.
圖1描繪在壓力鍋測試(PCT)中，金和銀在高濕度環境下之可靠性。 Figure 1 depicts the reliability of gold and silver in a high humidity environment in a pressure cooker test (PCT).
下文特舉實施例並配合所附圖式對本發明作詳細說明。然而本發明可實施為不同形式，且不應受限於本文所舉之實施例範圍。反之，本文所提供之實施例是為了使發明揭露得完善而詳盡，且向熟悉此技藝者完整展現本發明之原則。 The invention is described in detail below with reference to the accompanying drawings. However, the invention may be embodied in different forms and should not be limited to the scope of the embodiments presented herein. Rather, the embodiments are provided so that this disclosure will be thorough and will be
根據本發明之一實施例的半導體封裝之導線可用於將半導體晶片焊接至封裝基板。根據本發明之一實施例的半導體封裝之導線可稱為焊接導線。 A wire of a semiconductor package in accordance with an embodiment of the present invention can be used to solder a semiconductor wafer to a package substrate. A wire of a semiconductor package according to an embodiment of the present invention may be referred to as a solder wire.
根據本發明之一實施例的半導體封裝之含銀合金導線可藉由向純銀中加入一定量添加劑製為合金。然而，儘管未特別提及，含銀合金導線難免可能包含除銀和所述添加劑外的其他雜質。原因在於即使是純銀，在提純過程中總會包含微量雜質，且製成含銀合金時其中亦會包含微量雜質。不過由於微量雜質的量相較添加劑而言其量並不規則，且太少可忽略，故而雜質儘管難免却常常不納入考慮。因此，本發明之範圍不應局限於是否不可避免有雜質存在。 A silver-containing alloy wire of a semiconductor package according to an embodiment of the present invention can be made into an alloy by adding a certain amount of additives to pure silver. However, although not specifically mentioned, silver-containing alloy wires are inevitably likely to contain other impurities than silver and the additives. The reason is that even in pure silver, trace impurities are always contained in the purification process, and trace impurities are also contained in the silver-containing alloy. However, since the amount of trace impurities is irregular compared to the additive, and is too small to be neglected, impurities are often not considered, although inevitably. Therefore, the scope of the present invention should not be limited to whether or not impurities are inevitably present.
根據本發明實施例之半導體封裝之含銀合金導線可包括至少一種由下列元素所構成的族群中選出之第一添加劑：鉑(Pt)、鈀(Pd)、銠(Rh)、鋨(Os)、金(Au)、鎳(Ni)，以及其餘的銀。舉例而言，含銀合金導線可包括重量含量為0.05%~5%的第一添加劑，其餘是銀。 The silver-containing alloy wire of the semiconductor package according to an embodiment of the present invention may include at least one first additive selected from the group consisting of platinum (Pt), palladium (Pd), rhodium (Rh), and osmium (Os). , gold (Au), nickel (Ni), and the rest of the silver. For example, the silver-containing alloy wire may include a first additive in an amount of 0.05% to 5% by weight, the balance being silver.
第一添加劑可提高含銀合金導線在高濕度環境下的可靠 性。第一添加劑可抑制含銀合金導線與半導體晶片接墊間之焊接面形成氧化膜以及發生電蝕。從而可防止焊接面發生晶片裂紋並改進焊接強度。 The first additive improves the reliability of silver-containing alloy wires in high humidity environments Sex. The first additive can inhibit the formation of an oxide film on the soldered surface between the silver-containing alloy wire and the semiconductor wafer pad and cause electrical corrosion. Thereby, wafer cracking on the soldered surface can be prevented and the soldering strength can be improved.
然而，若第一添加劑之重量含量少於0.05%，則包括含銀合金導線在內的半導體封裝在高濕度環境下的可靠性並無太大提升。例如，含銀合金導線與接墊間之焊接面可能出現晶片裂紋，從而削弱其間之焊接強度。此外，若第一添加劑之重量含量大於5%，則含銀合金導線之電阻將增大，且焊接面上含銀合金導線之自由氣球將變硬從而引起晶片裂紋。因此，導線與半導體晶片間之電性連接的可靠性會大幅降低。 However, if the weight content of the first additive is less than 0.05%, the reliability of the semiconductor package including the silver-containing alloy wire in a high-humidity environment is not greatly improved. For example, a soldered surface between a silver-containing alloy wire and a pad may have a crack in the wafer, thereby weakening the soldering strength therebetween. Further, if the weight content of the first additive is more than 5%, the electric resistance of the silver-containing alloy wire will increase, and the free balloon containing the silver alloy wire on the welding face will harden to cause wafer cracking. Therefore, the reliability of the electrical connection between the wires and the semiconductor wafer is greatly reduced.
根據本發明另一實施例之含銀合金導線可包括至少一種由下列元素所構成的族群中選出之第二添加劑：銅(Cu)、鈹(Be)、鈣(Ca)、鎂(Mg)、鋇(Ba)、鑭(La)、鈰(Ce)、釔(Y)，以及其餘的銀。 A silver-containing alloy wire according to another embodiment of the present invention may include at least one second additive selected from the group consisting of copper (Cu), beryllium (Be), calcium (Ca), magnesium (Mg),钡 (Ba), 镧 (La), 铈 (Ce), 钇 (Y), and the rest of the silver.
舉例而言，第二添加劑可包括重量含量為0.1%~5%的銅(Cu)。舉另一例而言，第二添加劑可包括重量含量為3ppm~100ppm的至少一種由下列元素所構成的族群中選出之材料：Be、Ca、Mg、Ba、La、Ce、Y。或者，第二添加劑可包括重量含量為0.1%~5%的銅，以及重量含量為3ppm~100ppm的至少一種由下列元素所構成的族群中選出之材料：Be、Ca、Mg、Ba、La、Ce、Y。 For example, the second additive may include copper (Cu) in an amount of 0.1% to 5% by weight. In another example, the second additive may comprise at least one selected from the group consisting of: Be, Ca, Mg, Ba, La, Ce, Y in a weight content of from 3 ppm to 100 ppm. Alternatively, the second additive may include copper in a weight content of 0.1% to 5%, and a material selected from the group consisting of at least one of the following elements in a weight content of 3 ppm to 100 ppm: Be, Ca, Mg, Ba, La, Ce, Y.
第二添加劑有助於進一步改進含銀合金導線之可使用性 及拉伸強度，而非高濕度環境下的可靠性。因此，相較於習知技術而言，本發明可以大幅減少製造含銀合金導線時所進行熱退火程序的次數，從而又可大幅降低製造成本。 The second additive helps to further improve the usability of the silver-containing alloy wire And tensile strength, not reliability in high humidity environments. Therefore, compared with the prior art, the present invention can greatly reduce the number of times of the thermal annealing process performed when manufacturing the silver-containing alloy wire, thereby greatly reducing the manufacturing cost.
若銅之重量含量低於0.1%，則可使用性的改進不明顯。又，若銅的重量含量低於5%，則含銀合金導線之電阻增大，且將發生晶片裂紋，從而降低焊接強度。 If the weight content of copper is less than 0.1%, the improvement in workability is not significant. Further, if the weight content of copper is less than 5%, the electric resistance of the silver-containing alloy wire is increased, and wafer cracking occurs, thereby reducing the welding strength.
若鈹、鈣、鎂、鋇、鑭、鈰、釔之重量含量低於3ppm，則可使用性的改進不明顯。又，若鈹、鈣、鎂、鋇、鑭、鈰、釔之重量含量高於100ppm，則形成自由氣球時將形成固化凹坑(Solidified dimples)，從而大幅減弱焊接強度。 If the weight content of barium, calcium, magnesium, strontium, barium, strontium, barium is less than 3 ppm, the improvement in usability is not obvious. Further, if the weight content of barium, calcium, magnesium, strontium, barium, strontium, barium is higher than 100 ppm, solidified dimples are formed when a free balloon is formed, thereby greatly reducing the welding strength.
根據本發明另一實施例之含銀合金導線可既包括上述第一添加劑，亦包括第二添加劑，其餘的部份可為銀。在此情况下，可改進含銀合金導線在高濕度環境下的可靠性和可使用性。 The silver-containing alloy wire according to another embodiment of the present invention may include both the first additive described above and the second additive, and the remaining portion may be silver. In this case, the reliability and workability of the silver-containing alloy wire in a high humidity environment can be improved.
下面將結合實施例實例及對比實例，詳細說明添加劑對含銀合金導線之特性的影響。 The effects of the additives on the properties of the silver-containing alloy wires will be described in detail below with reference to the examples of the examples and comparative examples.
表1表示各添加劑含量對應的含銀合金導線。實驗實施例1至16表示只含一種第一添加劑的含銀合金導線，且實驗實施例17至32表示只含一種第二添加劑的含銀合金導線。實驗實施例33至41表示含至少兩種第一添加劑或至少兩種第二添加劑、或者既含第一添加劑亦含第二添加劑的含銀合金導線。對比實例1至3表示包含除第一添加劑和第二添加劑外的其他添加劑的含銀合金導線。 Table 1 shows the silver-containing alloy wires corresponding to the respective additive contents. Experimental Examples 1 to 16 show silver-containing alloy wires containing only one first additive, and Experimental Examples 17 to 32 show silver-containing alloy wires containing only one second additive. Experimental Examples 33 to 41 represent silver-containing alloy wires containing at least two first additives or at least two second additives, or both a first additive and a second additive. Comparative Examples 1 to 3 represent silver-containing alloy wires containing other additives than the first additive and the second additive.
表2為表1所示含銀合金導線之特性相關的實驗結果。表2中，高濕度環境下的可靠性由壓力鍋測試(PCT)中之焊接強度(BPT值)表示。含銀合金導線直徑約30um，且PCT是在121℃溫度下進行96個小時。至於焊接強度之可靠性，◎表示極佳狀態，○表示較佳狀態，△表示正常狀態，X表示較差狀態。可使用性是由含銀合金導線每1千米斷線之次數表示，因此該數字越少說明特性越好。存架壽命表示在含銀合金導線上形成厚度100nm之氧化膜需要的時間，因此該數字越大說明特性越好。 Table 2 shows the experimental results relating to the characteristics of the silver-containing alloy wires shown in Table 1. In Table 2, the reliability in a high humidity environment is represented by the weld strength (BPT value) in the pressure cooker test (PCT). The silver-containing alloy wire has a diameter of about 30 um, and the PCT is performed at a temperature of 121 ° C for 96 hours. As for the reliability of the welding strength, ◎ indicates an excellent state, ○ indicates a preferable state, Δ indicates a normal state, and X indicates a poor state. Usability is expressed by the number of times the silver-containing alloy wire is broken every 1 km, so the smaller the number, the better the characteristics. The shelf life represents the time required to form an oxide film having a thickness of 100 nm on a silver-containing alloy wire, so the larger the number, the better the characteristics.
參見表1及表2，實驗實施例1至7表示鈀(Pd)含量(即第一添加劑)對含銀合金導線特性的影響。在實驗實施例2至5中，鈀的重量含量為0.05~5%，含銀合金導線可靠性很好，且可 使用性優於比較例1至3。然而，在實驗實施例1中，鈀的重量含量為0.01%，焊接強度較差且存架壽命期較短。又，在實驗實施例6和7中，鈀的重量含量分別為10%和30%，有裂紋出現。 Referring to Tables 1 and 2, Experimental Examples 1 to 7 show the effect of the palladium (Pd) content (i.e., the first additive) on the properties of the silver-containing alloy wire. In Experimental Examples 2 to 5, the weight content of palladium is 0.05 to 5%, and the silver-containing alloy wire has good reliability and can be The usability was superior to Comparative Examples 1 to 3. However, in Experimental Example 1, the weight content of palladium was 0.01%, the weld strength was poor, and the shelf life was short. Further, in Experimental Examples 6 and 7, the weight contents of palladium were 10% and 30%, respectively, and cracks appeared.
實驗實施例8至16表示一種第一添加劑(包括鉑、鈀、銠、鋨、金、鎳)的含量對含銀合金導線特性的影響。在實驗實施例8至12以及14至16中，第一添加劑之重量含量為0.5~5%，含銀合金導線之可靠性極佳，且可使用性優於對比實例1至3。同時，在實驗實施例13中，鎳之重量含量為0.01%，焊接強度較差。 Experimental Examples 8 to 16 show the influence of the content of a first additive (including platinum, palladium, rhodium, iridium, gold, nickel) on the characteristics of the silver-containing alloy wire. In Experimental Examples 8 to 12 and 14 to 16, the first additive had a weight content of 0.5 to 5%, and the reliability of the silver-containing alloy wire was excellent, and the workability was superior to Comparative Examples 1 to 3. Meanwhile, in Experimental Example 13, the weight content of nickel was 0.01%, and the weld strength was poor.
因此，由上述實驗結果可知，第一添加劑(包括鉑、鈀、銠、鋨、金、鎳)對含銀合金導線之特性的影響相似。相應地，關於鉑和鎳之試驗結果同樣適用於鈀、銠、鋨、金。 Therefore, it is known from the above experimental results that the effects of the first additive (including platinum, palladium, rhodium, iridium, gold, nickel) on the characteristics of the silver-containing alloy wire are similar. Accordingly, the test results for platinum and nickel are equally applicable to palladium, rhodium, iridium, and gold.
實驗實施例17至21表示銅(即第二添加劑)對含銀合金導線特性之影響。在實驗實施例18至20中，銅之重量含量為0.1%~5%，可使用性相較於比較實例1至3大為改進，且相較於實驗實施例1至16略為改進。然而，在實驗實施例17中，銅之重量含量為0.05%，可使用性改進不明顯。又，在實驗實施例21中，銅之重量含量為10%，電阻增大且出現晶片裂紋。 Experimental Examples 17 to 21 show the influence of copper (i.e., the second additive) on the characteristics of the silver-containing alloy wire. In Experimental Examples 18 to 20, the weight content of copper was 0.1% to 5%, and the workability was greatly improved as compared with Comparative Examples 1 to 3, and was slightly improved as compared with Experimental Examples 1 to 16. However, in Experimental Example 17, the weight content of copper was 0.05%, and the usability improvement was not remarkable. Further, in Experimental Example 21, the weight content of copper was 10%, the electric resistance was increased, and wafer cracking occurred.
實驗實施例22至26表示鈣(即第二添加劑)對含銀合金導線特性施加的影響。在實驗實施例23至25中，鈣之重量含量為3ppm~100ppm，可使用性較比較例1至3大為改進，且較實驗實施例1至16略為改進。然而，在實驗實施例22中，鈣之重量含量為1ppm，電阻增大且出現晶片裂紋。在實驗實施例26中， 鈣之重量含量為500%，出現晶片裂紋，且自由空氣球中(free air ball,FAB)產生凹坑。 Experimental Examples 22 to 26 show the effect of calcium (i.e., the second additive) on the properties of the silver-containing alloy wire. In Experimental Examples 23 to 25, the weight content of calcium was 3 ppm to 100 ppm, and the workability was improved as compared with Comparative Examples 1 to 3, and slightly improved compared with Experimental Examples 1 to 16. However, in Experimental Example 22, the weight content of calcium was 1 ppm, the electric resistance was increased and wafer cracking occurred. In Experimental Example 26, The weight content of calcium is 500%, wafer cracking occurs, and pits are formed in the free air ball (FAB).
實驗實施例27至32表示第二添加劑(包括鈹、鎂、鋇、鑭、鈰、釔)對含銀合金導線特性的影響。在實驗實施例27至32中，鈹、鎂、鋇、鑭、鈰、釔之重量含量為10%，可使用性較比較實例1至3大為改進，且較實驗實施例1至16略為改進。 Experimental Examples 27 to 32 show the influence of the second additive (including bismuth, magnesium, lanthanum, cerium, lanthanum, cerium) on the characteristics of the silver-containing alloy wire. In Experimental Examples 27 to 32, the weight content of cerium, magnesium, lanthanum, cerium, lanthanum, cerium was 10%, and the workability was improved as compared with Comparative Examples 1 to 3, and was slightly improved compared with Experimental Examples 1 to 16. .
因此，由上述試驗結果來看可知，第二添加劑鈹(Be)、鈣(Ca)、鎂(Mg)、鋇(Ba)、鑭(La)、鈰(Ce)、釔(Y)具有相似之特性。相應地，關於鈣之試驗結果同樣適用於鈹、鎂、鋇、鑭、鈰、釔。 Therefore, from the above test results, the second additive Be (Be), calcium (Ca), magnesium (Mg), barium (Ba), lanthanum (La), cerium (Ce), yttrium (Y) have similarities. characteristic. Correspondingly, the test results for calcium are equally applicable to bismuth, magnesium, strontium, barium, strontium, barium.
實驗實施例33至41表示至少兩種第一添加劑、至少兩種第二添加劑、或第一添加劑與第二添加劑之混合物對含銀合金導線之特性的影響。由實驗實施例1至32之結果來看，實驗實施例33至41分別滿足第一添加劑和第二添加劑之較佳含量。在此情况下，焊接強度與可使用性皆較比較實例1至3有進一步改進。因此，含銀合金導線中可同時包含第一添加劑和第二添加劑，而不會互相之間產生負面影響。 Experimental Examples 33 to 41 show the influence of at least two first additives, at least two second additives, or a mixture of the first additive and the second additive on the characteristics of the silver-containing alloy wire. From the results of Experimental Examples 1 to 32, Experimental Examples 33 to 41 satisfy the preferred contents of the first additive and the second additive, respectively. In this case, the weld strength and workability were further improved compared to Examples 1 to 3. Therefore, the first additive and the second additive may be contained in the silver-containing alloy wire without adversely affecting each other.
根據本發明之含銀合金導線可增大導電性，同時較常用金導線顯著降低單位成本。 The silver-containing alloy wire according to the present invention can increase the electrical conductivity while significantly lowering the unit cost than the conventional gold wire.
又，根據本發明之含銀合金導線的焊接強度較常用銀導線有進一步增強，從而增大了可靠性。此外，含銀合金導線之可靠性增大，從而降低含銀合金導線之製造成本。 Further, the welding strength of the silver-containing alloy wire according to the present invention is further enhanced than that of the conventional silver wire, thereby increasing reliability. In addition, the reliability of the silver-containing alloy wire is increased, thereby reducing the manufacturing cost of the silver-containing alloy wire.
雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之精神和範圍內，當可作些許之更動與潤飾，因此本發明之保護範圍當視後附之申請專利範圍所界定者為准。 While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.
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