TW201342461A - Stacked assembly for plasma reaction chamber and production method thereof - Google Patents
Stacked assembly for plasma reaction chamber and production method thereof Download PDFInfo
- Publication number
- TW201342461A TW201342461A TW101143563A TW101143563A TW201342461A TW 201342461 A TW201342461 A TW 201342461A TW 101143563 A TW101143563 A TW 101143563A TW 101143563 A TW101143563 A TW 101143563A TW 201342461 A TW201342461 A TW 201342461A
- Authority
- TW
- Taiwan
- Prior art keywords
- bonding layer
- reaction chamber
- manufacturing
- plasma reaction
- laminated
- Prior art date
Links
Abstract
Description
本發明涉及半導體製造領域,尤其涉及一種用於等離子反應室的層疊型元件及其製造方法。 The present invention relates to the field of semiconductor manufacturing, and more particularly to a laminated type element for a plasma reaction chamber and a method of manufacturing the same.
等離子子反應室具有許多層疊型元件,層疊型元件需要將至少兩個部分按照各種方式層疊在一起。 The plasma sub-reaction chamber has a plurality of laminated elements, and the laminated type elements require that at least two portions are laminated together in various ways.
本發明就是為了尋求一種高效低耗,而又不影響層疊型元件機能的製造方法。 The present invention seeks to provide a manufacturing method that is efficient and low-cost without affecting the function of the laminated component.
針對背景技術中的上述問題,本發明提出了一種用於等離子反應室的層疊型元件及其製造方法。 In view of the above problems in the background art, the present invention proposes a laminated type element for a plasma reaction chamber and a method of manufacturing the same.
本發明第一方面提供了一種製造用於等離子體反應室的層疊型元件的製造方法,其中該製造方法包括如下步驟:提供一個具有至少一個接合面的第一部分,提供一個具有至少一個和該第一部分的該接合面配合的接合面的第二部分,在該第一部分的接合面上施加一層硬性第一結合層,在該第一結合層上施加一層由彈性材料製成的第二結合層,形成包括該第一部分和該第二部分的層疊型元件,使得該第一結合層和該第二結合層結合該第一部分和該第二部分的各接合面。 A first aspect of the present invention provides a method of manufacturing a laminated type component for a plasma reaction chamber, wherein the manufacturing method comprises the steps of: providing a first portion having at least one joint surface, providing one having at least one and the first a portion of the second portion of the mating surface of the mating surface, a rigid first bonding layer is applied on the bonding surface of the first portion, and a second bonding layer made of an elastic material is applied on the first bonding layer. A laminated type member including the first portion and the second portion is formed such that the first bonding layer and the second bonding layer combine the respective bonding faces of the first portion and the second portion.
在本發明的一實施例中,該第一結合層由金屬製成。 In an embodiment of the invention, the first bonding layer is made of metal.
在本發明的一實施例中,該第一結合層是金屬鋁製成。 In an embodiment of the invention, the first bonding layer is made of metal aluminum.
在本發明的一實施例中,該第二結合層包括導電材料,用於 提供該第一部分和該第二部分之間的導電通路。 In an embodiment of the invention, the second bonding layer comprises a conductive material for A conductive path between the first portion and the second portion is provided.
在本發明的一實施例中,在該第一部分的接合面上採用PVD、CVD或者蒸發電鍍工藝澱積該結合層。 In an embodiment of the invention, the bonding layer is deposited on the bonding surface of the first portion by PVD, CVD or evaporation plating.
在本發明的一實施例中,該製造方法更包括如下步驟:向該第二部分施加一個力,使得其接合面緊密結合於位於該第一部分上的第一結合層和第二結合層。 In an embodiment of the invention, the manufacturing method further includes the step of applying a force to the second portion such that the bonding surface thereof is tightly bonded to the first bonding layer and the second bonding layer on the first portion.
在本發明的一實施例中,其中,該層疊型組件包括氣體噴淋頭,該第一部分包括用於充當該等離子反應室的上電極的前板,該第二部分包括用於充當安裝板和電極連接的後板。 In an embodiment of the invention, wherein the stacked assembly includes a gas showerhead, the first portion includes a front plate for acting as an upper electrode of the plasma reaction chamber, the second portion including for acting as a mounting plate and The back plate to which the electrodes are connected.
在本發明的一實施例中,其中,該層疊型組件包括上部接地環,該第一部分包括充當上部接地電極的前板,該第二部分包括用於充當安裝板和接地連接的後板。 In an embodiment of the invention, wherein the stacked component includes an upper ground ring, the first portion includes a front plate that serves as an upper ground electrode, and the second portion includes a rear plate for acting as a mounting plate and a ground connection.
本發明第二方面提供一種用於等離子體反應室的層疊型元件,其中該層疊型元件按照本發明第一方面提供的製造方法製成。 A second aspect of the invention provides a laminated type element for a plasma reaction chamber, wherein the laminated type element is produced in accordance with the manufacturing method provided by the first aspect of the invention.
在本發明的一實施例中,其中該層疊型組件包括氣體噴淋頭,該第一部分包括用於充當該等離子反應室的上電極的前板,該第二部分包括用於充當安裝板和電極連接的後板。 In an embodiment of the invention, wherein the stacked assembly includes a gas showerhead, the first portion includes a front plate for acting as an upper electrode of the plasma reaction chamber, the second portion including for acting as a mounting plate and an electrode Connected rear panel.
在本發明的一實施例中,其中該層疊型組件包括上部接地環,該第一部分包括充當上部接地電極的前板,該第二部分包括用於充當安裝板和接地連接的後板。 In an embodiment of the invention, wherein the stacked component includes an upper ground ring, the first portion includes a front plate that serves as an upper ground electrode, and the second portion includes a rear plate for acting as a mounting plate and a ground connection.
本發明第三方面提供了一種等離子體反應室,其中,該等離子體反應室包括根據本發明第二方面提供的層疊型元件。 A third aspect of the invention provides a plasma reaction chamber, wherein the plasma reaction chamber comprises a laminated type element according to the second aspect of the invention.
在本發明的一實施例中,其中該層疊型組件包括氣體噴淋頭,該第一部分包括用於充當該等離子反應室的上電極的前板,該第二部分包括用於充當安裝板和電極連接的後板。 In an embodiment of the invention, wherein the stacked assembly includes a gas showerhead, the first portion includes a front plate for acting as an upper electrode of the plasma reaction chamber, the second portion including for acting as a mounting plate and an electrode Connected rear panel.
在本發明的一實施例中,其中該層疊型組件包括上部接地環,該第一部分包括充當上部接地電極的前板,該第二部分包括用於充當安裝板和接地連接的後板。 In an embodiment of the invention, wherein the stacked component includes an upper ground ring, the first portion includes a front plate that serves as an upper ground electrode, and the second portion includes a rear plate for acting as a mounting plate and a ground connection.
由於本發明採用硬性的第一結合層和彈性的第二結合層結合層疊型元件的第一部分和第二部分,使得所述層疊型元件緻密度更好,導熱性更好。 Since the present invention employs a rigid first bonding layer and an elastic second bonding layer in combination with the first portion and the second portion of the laminated member, the laminated member is made denser and has better thermal conductivity.
1‧‧‧氣體噴淋頭 1‧‧‧ gas sprinkler
11‧‧‧通孔 11‧‧‧through hole
12‧‧‧後板 12‧‧‧ Back panel
12a‧‧‧第二接合面 12a‧‧‧Second joint
13‧‧‧結合層 13‧‧‧Combination layer
14‧‧‧前板 14‧‧‧ front board
14a‧‧‧第一接合面 14a‧‧‧First joint
15‧‧‧第二結合層 15‧‧‧Second bonding layer
15a‧‧‧上表面 15a‧‧‧Upper surface
2‧‧‧上部接地環 2‧‧‧Upper grounding ring
22‧‧‧後板 22‧‧‧ Back panel
22a‧‧‧第二接合面 22a‧‧‧Second joint
23‧‧‧第一結合層 23‧‧‧First bonding layer
24‧‧‧所述前板 24‧‧‧ front panel
24a‧‧‧第一接合面 24a‧‧‧first joint
25‧‧‧第二結合層 25‧‧‧Second bonding layer
圖1是等離子體處理裝置的結構示意圖;圖2是等離子體處理裝置的氣體噴淋頭和上部接地環的結構示意圖;圖3是本發明的第一具體實施例的用於等離子體處理裝置的層疊型元件製造方法的步驟流程圖;圖4a~4d是本發明的第一具體實施例的用於等離子體處理裝置的層疊型元件製造方法示意圖;圖5是本發明的第二具體實施例的用於等離子體處理裝置的層疊型元件製造方法的步驟流程圖;圖6是本發明的第二具體實施例的用於等離子體處理裝置的層疊型元件的結構示意圖。 1 is a schematic structural view of a plasma processing apparatus; FIG. 2 is a schematic structural view of a gas shower head and an upper grounding ring of the plasma processing apparatus; and FIG. 3 is a plasma processing apparatus for a plasma processing apparatus according to a first embodiment of the present invention. FIG. 4a to 4d are schematic views showing a method of manufacturing a laminated component for a plasma processing apparatus according to a first embodiment of the present invention; and FIG. 5 is a second embodiment of the present invention. Flowchart of a step of manufacturing a laminated type component for a plasma processing apparatus; Fig. 6 is a schematic structural view of a laminated type element for a plasma processing apparatus according to a second embodiment of the present invention.
以下結合附圖,對本發明的具體實施方式進行說明。 Specific embodiments of the present invention will be described below with reference to the accompanying drawings.
以下結合附圖,對本發明的具體實施方式進行說明。 Specific embodiments of the present invention will be described below with reference to the accompanying drawings.
圖1是等離子體處理裝置的結構示意圖。等離子體反應室包括一腔室,其中,設置了一製程區。處理氣體和其他輔助氣體從腔室頂部進入,射頻能量連接於下電極,並提供能量在製程區激發並產生等離子,使得其與其中的基片進行各種物理或化學反應,從而完成預定的製程。其 中,還設置了一個真空泵,用於將製程冗餘的雜質氣體等抽出腔室以外。其中,所述等離子體反應室還包括一位於所述頂部的氣體噴淋頭1和位於所述氣體噴淋頭(showerhead)1週邊的上部接地環(upper ground ring)2。 1 is a schematic structural view of a plasma processing apparatus. The plasma reaction chamber includes a chamber in which a process zone is disposed. Process gases and other auxiliary gases enter from the top of the chamber, and RF energy is coupled to the lower electrode and provides energy to excite and generate plasma in the process zone to cause various physical or chemical reactions with the substrate therein to complete the predetermined process. its In addition, a vacuum pump is also provided for extracting redundant impurity gases and the like from the process chamber. Wherein, the plasma reaction chamber further includes a gas shower head 1 at the top and an upper ground ring 2 at the periphery of the gas shower head (showerhead) 1.
圖2示出了等離子體處理裝置的氣體噴淋頭和上部接地環的結構示意圖。如圖2所示,氣體噴淋頭1是具有一定厚度的圓盤形元件,其中設置有若干個通孔11,用於向反應室內輸入和噴射反應氣體。所述通孔11由已經製備成的導電基體經超聲波鑽孔形成,其可以為直線性的孔徑均勻的通孔,其也可以為非均勻孔徑的通孔,比如,通孔11具有孔徑較大的上端部以及孔徑較小的下端部。應當理解,所述通孔11也可以被製造成其他各種非均勻孔徑形狀:例如上大下小的錐形通孔,或者是上小下大的倒錐形通孔,也可以是上下孔徑一樣而中間有一段較小孔徑的通孔,還可以是上下孔徑一樣或不一樣的非直線性(彎曲)的通孔等等。如圖2所示,結合圖1,氣體噴淋頭1周圍還設置有一上部接地環2,其用於對氣體噴淋頭1起支撐作用或用於加大氣體噴淋頭橫向面積以改善等離子體蝕刻的均勻性。氣體噴淋頭1除了向反應腔體通入氣體外,還被用作為電極以及射頻通道。 2 is a schematic view showing the structure of a gas shower head and an upper ground ring of a plasma processing apparatus. As shown in Fig. 2, the gas shower head 1 is a disk-shaped member having a certain thickness in which a plurality of through holes 11 are provided for inputting and ejecting a reaction gas into the reaction chamber. The through hole 11 is formed by ultrasonic drilling of the prepared conductive substrate, which may be a linear through hole having a uniform aperture, and may also be a through hole having a non-uniform aperture. For example, the through hole 11 has a large aperture. The upper end portion and the lower end portion having a smaller aperture. It should be understood that the through hole 11 can also be fabricated into other various non-uniform aperture shapes: for example, a tapered through hole that is large and small, or a reverse tapered through hole that is large and small, or the same as the upper and lower apertures. In the middle, there is a through hole having a small aperture, and it may be a non-linear (bent) through hole having the same or different upper and lower apertures. As shown in FIG. 2, in conjunction with FIG. 1, an upper grounding ring 2 is further disposed around the gas shower head 1 for supporting the gas shower head 1 or for increasing the lateral area of the gas shower head to improve the plasma. The uniformity of the body etching. In addition to introducing gas into the reaction chamber, the gas shower head 1 is also used as an electrode and an RF channel.
圖3示出了根據本發明的第一具體實施例的用於等離子體處理裝置的層疊型元件製造方法的步驟流程圖,圖4示出了根據本發明的第一具體實施例的用於等離子體處理裝置的層疊型元件製造方法示意圖。下面以氣體噴淋頭為例,結合附圖3和附圖4,對本發明進行說明。本領域技術人員應當理解,氣體噴淋頭至少包括圓盤形的具有一定厚度的兩部分層疊而成,即前板和後板。其中,所述前板典型地是由矽或者碳化矽製成的,用於充當等離子體處理裝置的上電極;所述後板典型地是由鋁合金製成的,用於充當安裝板和電極連接板。 3 is a flow chart showing the steps of a method for fabricating a laminated component for a plasma processing apparatus according to a first embodiment of the present invention, and FIG. 4 is a view showing a plasma for a first embodiment according to the present invention. A schematic diagram of a method of manufacturing a laminated component of a bulk processing apparatus. The present invention will now be described with reference to a gas shower head as an example, in conjunction with FIG. 3 and FIG. It will be understood by those skilled in the art that the gas showerhead comprises at least two portions of a disk having a certain thickness, that is, a front plate and a rear plate. Wherein the front plate is typically made of tantalum or tantalum carbide for use as an upper electrode of a plasma processing apparatus; the back plate is typically made of an aluminum alloy for acting as a mounting plate and electrode Connection plate.
本發明第一方面提供了一種製造用於等離子反應室的層疊 型元件的製造方法,所述製造方法包括如下步驟:首先,執行步驟S11,參見圖4a,提供一個具有至少一個第一接合面14a的前板14,其典型地由矽或者碳化矽製成的,用於充當等離子體處理裝置的上電極;並且,執行步驟S12,提供一個具有至少一個和所述前板14的所述第一接合面14a配合的第二接合面12a的後板12。所述後板12用於充當安裝板和電極連接板。 A first aspect of the invention provides a laminate for fabricating a plasma reaction chamber A method of manufacturing a type of component, the method of manufacturing comprising the steps of: first, performing step S11, see Fig. 4a, providing a front panel 14 having at least one first joint surface 14a, typically made of tantalum or tantalum carbide And used to serve as an upper electrode of the plasma processing apparatus; and, in step S12, a rear plate 12 having at least one second joint surface 12a mated with the first joint surface 14a of the front plate 14 is provided. The rear plate 12 serves to serve as a mounting plate and an electrode connection plate.
需要說明的是,雖然在本實施例中示例性地按照先執行步驟S11再執行S12,可是應當理解,執行步驟S11和S12並沒有具體的順序關係,也可以先執行步驟S12再執行步驟S11,也可以同時執行步驟S11和步驟S12,兩者之間並沒有必然的先後順序。同時,由於前板和後板的製造方法及其結構在現有技術中已有成熟的技術支援,為簡明起見,在此不在贅述。 It should be noted that, in the embodiment, the S12 is performed by the step S11 in the first embodiment, but it should be understood that the steps S11 and S12 are not performed in a specific order relationship, and the step S12 may be performed first, and then the step S11 may be performed. Step S11 and step S12 can also be performed at the same time, and there is no necessary sequence between the two. At the same time, since the manufacturing methods and structures of the front and rear panels have mature technical support in the prior art, for the sake of brevity, details are not described herein.
然後,執行步驟S13,參見圖4b,在前板14的第一接合面14a上施加一層硬性的第一結合層13。典型地,可以PVD、CVD或者蒸發電鍍工藝澱積所述結合層13於所述前板14的第一結合面14a。 Then, step S13 is performed, referring to FIG. 4b, a hard first bonding layer 13 is applied on the first bonding surface 14a of the front panel 14. Typically, the bonding layer 13 may be deposited on the first bonding surface 14a of the front panel 14 by a PVD, CVD or evaporation plating process.
進一步地,所述第一結合層13由金屬製成。典型地,所述結合層13是金屬鋁製成。 Further, the first bonding layer 13 is made of metal. Typically, the bonding layer 13 is made of metallic aluminum.
接著,執行步驟S14,參照圖4c,在所述第一結合層13上施加第二結合層15,其中,所述第二結合層15具有一上表面15a,其係由彈性材料製成。其中所述彈性材料選自聚合物材料,例如聚銅、有機矽等。 Next, step S14 is performed, referring to FIG. 4c, a second bonding layer 15 is applied on the first bonding layer 13, wherein the second bonding layer 15 has an upper surface 15a made of an elastic material. Wherein the elastic material is selected from the group consisting of polymeric materials such as polycopper, organic germanium, and the like.
進一步地,所述第二結合層15包括導電材料,用於提供所述第一部分和所述第二部分之間的導電通路。其中,所述導電材料包括金屬顆粒,例如鋁或鋁合金。 Further, the second bonding layer 15 includes a conductive material for providing a conductive path between the first portion and the second portion. Wherein, the conductive material comprises metal particles such as aluminum or an aluminum alloy.
具體地,所述第二結合層可以通過擦塗、刷塗、噴塗等方法 塗覆到所述第一結合層上,甚至包括後續的緻密化以及固化所述第二結合層的步驟等。由於上述方法在現有技術中已有成熟的技術支援,為簡明起見,不再贅述。 Specifically, the second bonding layer may be applied by wiping, brushing, spraying, or the like. Coating onto the first bonding layer, even including subsequent densification and the step of curing the second bonding layer, and the like. Since the above method has mature technical support in the prior art, it will not be described again for the sake of brevity.
接著,執行步驟S15,參見圖4d,形成包括所述前板14和後板12的氣體噴淋頭1,使得所述結合層13結合所述前板14和後板12的各接合面。具體地,可向所述後板12施加一個向下的力,使得其第二接合面12a緊密結合於位於所述前板14上的第一結合層13以及第二結合層15。 Next, step S15 is performed, referring to FIG. 4d, a gas shower head 1 including the front plate 14 and the rear plate 12 is formed such that the bonding layer 13 joins the joint faces of the front plate 14 and the rear plate 12. Specifically, a downward force may be applied to the rear plate 12 such that its second engaging surface 12a is tightly coupled to the first bonding layer 13 and the second bonding layer 15 on the front plate 14.
最後,執行步驟S16,將由上述步驟所得的元件冷卻至室溫,再在其上經超聲波鑽孔形成依次穿過所述前板14、結合層13和所述後板12的若干個通孔11,即得到了包括前板14和後板12,並通過結合層13結合所述前板14和後板12的氣體噴淋頭1。 Finally, step S16 is performed to cool the element obtained by the above steps to room temperature, and then ultrasonically drilled thereon to form a plurality of through holes 11 sequentially passing through the front plate 14, the bonding layer 13, and the rear plate 12. That is, the gas shower head 1 including the front plate 14 and the rear plate 12, and the front plate 14 and the rear plate 12 are joined by the bonding layer 13.
根據本發明的一個變化例,參照圖5和圖6,再結合圖1和圖2,本製造方法還可以應用於位於氣體噴淋頭1週邊的上部絕緣環2,其製造方法和氣體噴淋頭1的製造方法類似,其中,包括如下步驟:首先,執行步驟S21,提供一個具有至少一個第一接合面24a的前板24,其典型地由矽或者碳化矽製成的,其可以為整片的,也可以由若干個矽或碳化矽組成的一個圓環。所述前板24用於充當等離子體處理裝置的上部接地電極。 According to a variant of the invention, referring to Figures 5 and 6, together with Figures 1 and 2, the manufacturing method can also be applied to the upper insulating ring 2 at the periphery of the gas shower head 1, the manufacturing method thereof and the gas spray The manufacturing method of the head 1 is similar, and includes the following steps: First, step S21 is performed to provide a front plate 24 having at least one first joint surface 24a, which is typically made of tantalum or tantalum carbide, which may be A piece of a ring that can also consist of a number of tantalum or tantalum carbide. The front plate 24 is used to serve as an upper ground electrode of a plasma processing apparatus.
並且,執行步驟S22,提供一個具有至少一個和所述前板24的所述第一接合面24a配合的第二接合面22a的後板22。所述後板22是由鋁合金製成的,用於充當連接板和接地連接板。 And, in step S22, a rear plate 22 having at least one second engaging surface 22a that engages with the first engaging surface 24a of the front plate 24 is provided. The rear plate 22 is made of an aluminum alloy and serves to serve as a connecting plate and a ground connecting plate.
需要說明的是,雖然在本實施例中示例性地按照先執行步驟S21再執行S22,可是應當理解,執行步驟S21和S22並沒有具體的順序關係,也可以先執行步驟S22再執行步驟S21,也可以同時執行步驟S21和步驟S22,兩者之間並沒有必然的先後順序。同時,由於前板和後板的製造 方法及其結構在現有技術中已有成熟的技術支援,為簡明起見,在此不在贅述。 It should be noted that, in the embodiment, the step S21 is performed in the first step S21, but the step S21 is performed, and the step S21 is performed. Step S21 and step S22 can also be performed at the same time, and there is no necessary sequence between the two. At the same time, due to the manufacture of the front and back panels The method and its structure have mature technical support in the prior art, and for the sake of brevity, it will not be repeated here.
然後,執行步驟S23,在前板24的第一接合面24a上施加一層硬性的第一結合層23。典型地,可以PVD、CVD或者蒸發電鍍工藝澱積所述結合層13於所述前板24的第一結合面24a。 Then, step S23 is performed to apply a hard first bonding layer 23 on the first bonding surface 24a of the front panel 24. Typically, the bonding layer 13 can be deposited on the first bonding surface 24a of the front panel 24 by a PVD, CVD or evaporation plating process.
進一步地,所述第一結合層23由金屬製成。典型地,所述第一結合層23是金屬鋁製成。 Further, the first bonding layer 23 is made of metal. Typically, the first bonding layer 23 is made of metallic aluminum.
其中,所述第一結合層23的厚度取值範圍為0.1mm~2mm。 The thickness of the first bonding layer 23 ranges from 0.1 mm to 2 mm.
接著,執行步驟S24,參照圖4c,在所述第一結合層13上施加第二結合層15,其中,所述第二結合層25由彈性材料製成。其中所述彈性材料選自聚合物材料,例如聚銅、有機矽等。其中,所述第二結合層25的厚度取值範圍為0.1mm~2mm。 Next, step S24 is performed, referring to FIG. 4c, a second bonding layer 15 is applied on the first bonding layer 13, wherein the second bonding layer 25 is made of an elastic material. Wherein the elastic material is selected from the group consisting of polymeric materials such as polycopper, organic germanium, and the like. The thickness of the second bonding layer 25 ranges from 0.1 mm to 2 mm.
進一步地,所述第二結合層15包括導電材料,用於提供所述第一部分和所述第二部分之間的導電通路。其中,所述導電材料包括金屬顆粒,例如鋁或鋁合金。 Further, the second bonding layer 15 includes a conductive material for providing a conductive path between the first portion and the second portion. Wherein, the conductive material comprises metal particles such as aluminum or an aluminum alloy.
具體地,所述第二結合層可以通過擦塗、刷塗、噴塗等方法塗覆到所述第一結合層上,甚至包括後續的緻密化以及固化所述第二結合層的步驟等。由於上述方法在現有技術中已有成熟的技術支援,為簡明起見,不再贅述。接著,執行步驟S25,參見圖6,形成包括所述前板24和後板22的上部接地環2,使得所述結合層23結合所述前板24和後板22的各接合面。具體地,可向所述後板22施加一個向下的力,使得其第二接合面22a緊密結合於位於所述前板24上的結合層23。 Specifically, the second bonding layer may be applied to the first bonding layer by wiping, brushing, spraying, or the like, even including subsequent densification and a step of curing the second bonding layer. Since the above method has mature technical support in the prior art, it will not be described again for the sake of brevity. Next, step S25 is performed. Referring to FIG. 6, the upper grounding ring 2 including the front plate 24 and the rear plate 22 is formed such that the bonding layer 23 joins the joint faces of the front plate 24 and the rear plate 22. Specifically, a downward force can be applied to the rear panel 22 such that its second engagement surface 22a is tightly coupled to the bonding layer 23 on the front panel 24.
最後,冷卻至室溫,即得到了上部接地環2。 Finally, cooling to room temperature, the upper grounding ring 2 is obtained.
本發明第二方面還提供了一種用於等離子體反應室的層疊型元件,其中,所述層疊型元件按照前述的製造方法製成。 A second aspect of the present invention also provides a laminated type element for a plasma reaction chamber, wherein the laminated type element is produced in accordance with the aforementioned manufacturing method.
典型地所述層疊型組件為一氣體噴淋頭或一上部接地環。 Typically the stacked component is a gas showerhead or an upper grounding ring.
本發明第三方面還提供了一種等離子體反應室,其中,所述等離子體反應室包括前述的層疊型組件。 A third aspect of the invention also provides a plasma reaction chamber, wherein the plasma reaction chamber comprises the aforementioned stacked type assembly.
本發明採用硬性的第一結合層和彈性材料的結合層疊型元件的第一部分和第二部分。由於硬性的第一結合層與第一部分的材料都包括鋁,兩者材料類似,在冷卻疊型組件的環節上由於導熱良好能夠更快降溫。並且,由於本發明由於採用了硬性結合層使得材料更加緻密,使得所述層疊型組件不易形變,結合層不易在製程過程中出現物理或化學變化,使得製成的層疊型組件更加穩定、可靠性強。 The present invention employs a first portion and a second portion of a combination of a rigid first bonding layer and an elastomeric material. Since the hard first bonding layer and the first portion of the material both comprise aluminum, the materials are similar, and the temperature can be cooled more quickly due to good thermal conductivity in the cooling of the stacked component. Moreover, since the present invention is made to be more dense due to the use of a hard bonding layer, the laminated component is not easily deformed, and the bonding layer is not easily physically or chemically changed during the manufacturing process, so that the laminated component is more stable and reliable. Strong.
儘管本發明的內容已經通過上述優選實施例作了詳細介紹,但應當認識到上述的描述不應被認為是對本發明的限制。在本領域技術人員閱讀了上述內容後,對於本發明的多種修改和替代都將是顯而易見的。因此,本發明的保護範圍應由所附的權利要求來限定。 Although the present invention has been described in detail by the preferred embodiments thereof, it should be understood that the foregoing description should not be construed as limiting. Various modifications and alterations of the present invention will be apparent to those skilled in the art. Therefore, the scope of the invention should be defined by the appended claims.
1‧‧‧氣體噴淋頭 1‧‧‧ gas sprinkler
11‧‧‧通孔 11‧‧‧through hole
12‧‧‧後板 12‧‧‧ Back panel
12a‧‧‧第二接合面 12a‧‧‧Second joint
13‧‧‧結合層 13‧‧‧Combination layer
14‧‧‧前板 14‧‧‧ front board
14a‧‧‧第一接合面 14a‧‧‧First joint
15‧‧‧第二結合層 15‧‧‧Second bonding layer
Claims (14)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110431488.XA CN103177912B (en) | 2011-12-20 | 2011-12-20 | A kind of cascade type assembly and manufacture method thereof for plasma reaction chamber |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201342461A true TW201342461A (en) | 2013-10-16 |
TWI517245B TWI517245B (en) | 2016-01-11 |
Family
ID=48637694
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW101143563A TW201342461A (en) | 2011-12-20 | 2012-11-21 | Stacked assembly for plasma reaction chamber and production method thereof |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN103177912B (en) |
TW (1) | TW201342461A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114256046B (en) * | 2020-09-22 | 2024-07-05 | 中微半导体设备(上海)股份有限公司 | Plasma processing apparatus and method of operating the same |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100577866C (en) * | 2007-02-27 | 2010-01-06 | 中微半导体设备(上海)有限公司 | Gas sprayer assembly applied in plasma reaction chamber, manufacture method and renewing reutilization method thereof |
CN101296553B (en) * | 2008-06-25 | 2011-01-12 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing apparatus |
CN101930890A (en) * | 2009-06-26 | 2010-12-29 | 中微半导体设备(上海)有限公司 | Electrode component for plasma treatment, internal components for plasma treatment and manufacturing and separating method thereof |
CN201503845U (en) * | 2009-06-26 | 2010-06-09 | 中微半导体设备(上海)有限公司 | Internal component for plasma processing chamber and gas spray nozzle component |
JP5278354B2 (en) * | 2010-03-03 | 2013-09-04 | 三菱マテリアル株式会社 | Power module substrate, power module substrate manufacturing method, power module substrate with heat sink, and power module |
CN102268656B (en) * | 2011-08-05 | 2013-05-01 | 中微半导体设备(上海)有限公司 | Sprinkler of metal organic chemical vapor deposition (MOCVD) equipment as well as manufacture method and use method thereof |
-
2011
- 2011-12-20 CN CN201110431488.XA patent/CN103177912B/en active Active
-
2012
- 2012-11-21 TW TW101143563A patent/TW201342461A/en unknown
Also Published As
Publication number | Publication date |
---|---|
CN103177912A (en) | 2013-06-26 |
CN103177912B (en) | 2016-05-25 |
TWI517245B (en) | 2016-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI463597B (en) | High efficiency electrostatic chuck assembly for semiconductor wafer processing | |
TWI657526B (en) | Electrostatic carrier for handling substrates for processing and method for making tje same | |
TWI425109B (en) | Apparatus for chemical vapor deposition | |
JP2019016813A (en) | Vacuum process chamber component and methods of making | |
CN105470217A (en) | Integration of heat spreader for BEOL thermal management | |
TW201327719A (en) | Thermal plate with planar thermal zones for semiconductor processing | |
WO2003049180A1 (en) | Electrostatic clampless holder module and cooling system | |
JP2010507231A (en) | Upper electrode backing member with the function of reducing particles | |
TW200901363A (en) | Substrate carrying bench and substrate treatment device | |
JP2011510499A (en) | Substrate support apparatus and substrate processing apparatus having the same | |
CN1873049A (en) | Method of elastomer bonding of large area target | |
TWI705495B (en) | Substrate mounting table and substrate processing device | |
TW201342461A (en) | Stacked assembly for plasma reaction chamber and production method thereof | |
TWI553814B (en) | A multilayer element for a plasma reaction chamber and a method for manufacturing the same | |
KR20070093583A (en) | Esc, support table, chamber and the manufacture methods thereof | |
JP2016003384A (en) | Mask and method of manufacturing organic light-emitting device | |
KR101790394B1 (en) | Internal member applying apparatus for depositing thin film and method for the same | |
CN115497821A (en) | SiC cutting process based on flexible carrier plate | |
TWI600050B (en) | A method of manufacturing a plasma processing chamber and its submount | |
TWI623246B (en) | Electrode element for plasma etching and method of manufacturing same | |
KR100977315B1 (en) | The cathode arc for the plasma chamber and the method for manufacturing the same | |
KR100315147B1 (en) | Process for preparing static electricity chuck of ceramic type | |
JP4288130B2 (en) | Electrical joining member and plasma processing apparatus | |
CN112420638A (en) | Diamond film copper-clad heat sink and preparation method thereof | |
US20130277204A1 (en) | Vapour deposition |