TW201340341A - 多光管理紋路 - Google Patents
多光管理紋路 Download PDFInfo
- Publication number
- TW201340341A TW201340341A TW101141680A TW101141680A TW201340341A TW 201340341 A TW201340341 A TW 201340341A TW 101141680 A TW101141680 A TW 101141680A TW 101141680 A TW101141680 A TW 101141680A TW 201340341 A TW201340341 A TW 201340341A
- Authority
- TW
- Taiwan
- Prior art keywords
- light management
- light
- layer
- texture
- management
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims abstract description 125
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000005693 optoelectronics Effects 0.000 claims abstract description 32
- 230000003287 optical effect Effects 0.000 claims abstract description 23
- 239000002346 layers by function Substances 0.000 claims abstract description 16
- 230000010287 polarization Effects 0.000 claims abstract description 8
- 239000002245 particle Substances 0.000 claims description 14
- 238000000605 extraction Methods 0.000 claims description 11
- 239000000463 material Substances 0.000 description 33
- 239000012044 organic layer Substances 0.000 description 21
- 239000004922 lacquer Substances 0.000 description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 12
- 239000003973 paint Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 7
- 230000000737 periodic effect Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 4
- 229910001887 tin oxide Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 3
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010422 painting Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 150000003384 small molecules Chemical class 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 238000002834 transmittance Methods 0.000 description 2
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 238000002835 absorbance Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- QAKMMQFWZJTWCW-UHFFFAOYSA-N bismuth titanium Chemical compound [Ti].[Bi] QAKMMQFWZJTWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 239000000412 dendrimer Substances 0.000 description 1
- 229920000736 dendritic polymer Polymers 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- 238000005323 electroforming Methods 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003306 harvesting Methods 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011112 polyethylene naphthalate Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- NMJKIRUDPFBRHW-UHFFFAOYSA-N titanium Chemical compound [Ti].[Ti] NMJKIRUDPFBRHW-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/87—Light-trapping means
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/854—Arrangements for extracting light from the devices comprising scattering means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IN891DE2012 IN2012DE00891A (enExample) | 2012-03-27 | 2012-03-27 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201340341A true TW201340341A (zh) | 2013-10-01 |
Family
ID=48013807
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101141680A TW201340341A (zh) | 2012-03-27 | 2012-11-08 | 多光管理紋路 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20140139410A1 (enExample) |
| EP (1) | EP2645442A2 (enExample) |
| JP (1) | JP2013206883A (enExample) |
| KR (1) | KR20130109915A (enExample) |
| IN (1) | IN2012DE00891A (enExample) |
| TW (1) | TW201340341A (enExample) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| IN2012DE00981A (enExample) * | 2012-03-30 | 2015-09-11 | Moser Baer India Ltd | |
| WO2014069565A1 (ja) * | 2012-10-31 | 2014-05-08 | 昭和電工株式会社 | 有機ｅｌ素子並びにそれを備えた画像表示装置及び照明装置 |
| US9257676B2 (en) * | 2012-12-18 | 2016-02-09 | Pioneer Corporation | Light-emitting device |
| DE102014107099B4 (de) | 2014-05-20 | 2019-10-31 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Lichtstreuendes Schichtsystem, Verfahren zu seiner Herstellung und Verwendung des Schichtsystems |
| EP3210250B1 (en) * | 2014-10-24 | 2020-10-07 | Corning Incorporated | Oleds with improved light extraction using enhanced guided mode coupling |
| CN104659071B (zh) * | 2015-03-16 | 2017-10-31 | 合肥鑫晟光电科技有限公司 | 一种amoled显示面板制作方法及制作装置 |
| CN107533190A (zh) * | 2015-03-31 | 2018-01-02 | 康宁公司 | 包含光散射表面的波导以及包含所述波导的显示装置 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006035811A1 (ja) * | 2004-09-30 | 2006-04-06 | Kabushiki Kaisha Toshiba | 有機エレクトロルミネッセンス表示装置 |
| JP5214284B2 (ja) * | 2008-03-10 | 2013-06-19 | 株式会社東芝 | 発光装置用光取り出し層、およびそれを用いた有機エレクトロルミネッセンス素子 |
-
2012
- 2012-03-27 IN IN891DE2012 patent/IN2012DE00891A/en unknown
- 2012-09-14 KR KR1020120102462A patent/KR20130109915A/ko not_active Withdrawn
- 2012-10-05 JP JP2012222706A patent/JP2013206883A/ja active Pending
- 2012-11-08 TW TW101141680A patent/TW201340341A/zh unknown
-
2013
- 2013-03-27 US US13/851,706 patent/US20140139410A1/en not_active Abandoned
- 2013-03-27 EP EP13161324.2A patent/EP2645442A2/en not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130109915A (ko) | 2013-10-08 |
| IN2012DE00891A (enExample) | 2015-09-11 |
| JP2013206883A (ja) | 2013-10-07 |
| US20140139410A1 (en) | 2014-05-22 |
| EP2645442A2 (en) | 2013-10-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Peer et al. | Light management in perovskite solar cells and organic LEDs with microlens arrays | |
| US10483496B2 (en) | Electroluminescent devices with improved optical out-coupling efficiencies | |
| TW201340341A (zh) | 多光管理紋路 | |
| Cho et al. | Random and V-groove texturing for efficient light trapping in organic photovoltaic cells | |
| TWI576310B (zh) | 光學堆疊、有機發光二極體及其製造方法，及光伏打電池 | |
| JP2012146660A (ja) | フレキシブルスタンプを用いて剛性基板上にテクスチャーをインプリントする方法 | |
| Mihi et al. | Imprinted electrodes for enhanced light trapping in solution processed solar cells | |
| CN102854553B (zh) | 多重反射结构以及光电元件 | |
| CN103988097B (zh) | 层叠体及层叠体的制造方法 | |
| KR20120108926A (ko) | 배리어층 및 배리어층의 제조 방법 | |
| CN102034885A (zh) | 太阳能电池 | |
| CN101681937A (zh) | 提供有改进的电极层的透明基底 | |
| CN102934234A (zh) | 使用增强的光捕获方案的薄膜光伏器件 | |
| US20120255673A1 (en) | Method for transferring electrical gridlines on a lacquer layer | |
| Mariano et al. | Intermittent chaos for ergodic light trapping in a photonic fiber plate | |
| US20120118365A1 (en) | Thin film solar cell and manufacturing method thereof | |
| Lee et al. | Hierarchically Designed Light Trapping Films for All‐Day Operating Semitransparent Photovoltaics | |
| Martínez‐Denegri et al. | Ergodic Light Propagation in a Half‐Cylinder Photonic Plate for Optimal Absorption in Perovskite Solar Cells | |
| JPH11135817A (ja) | 光電変換素子およびその製造方法 | |
| Cho et al. | Solution-processed photonic crystals to enhance the light outcoupling efficiency of organic light-emitting diodes | |
| Li et al. | Innovative strategies for photons management on ultrathin silicon solar cells | |
| KR101406882B1 (ko) | 텍스쳐링 표면을 가진 투명 필름을 이용한 유기 박막 태양전지 | |
| Kuang et al. | Metal-nanowall grating transparent electrodes: Achieving high optical transmittance at high incident angles with minimal diffraction | |
| EP2506332A1 (en) | Substrate for improved handling and protection of an optoelectronic device | |
| Frantz et al. | Microstructured ZnO coatings combined with antireflective layers for light management in photovoltaic devices |