TW201334150A - Light emitting device - Google Patents

Light emitting device Download PDF

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Publication number
TW201334150A
TW201334150A TW101103482A TW101103482A TW201334150A TW 201334150 A TW201334150 A TW 201334150A TW 101103482 A TW101103482 A TW 101103482A TW 101103482 A TW101103482 A TW 101103482A TW 201334150 A TW201334150 A TW 201334150A
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TW
Taiwan
Prior art keywords
electrode
light
wire
illuminating
holder
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TW101103482A
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Chinese (zh)
Inventor
Kuan-Hao Chen
zong-han Li
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Lextar Electronics Corp
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Application filed by Lextar Electronics Corp filed Critical Lextar Electronics Corp
Priority to TW101103482A priority Critical patent/TW201334150A/en
Priority to CN201210087637XA priority patent/CN103247750A/en
Publication of TW201334150A publication Critical patent/TW201334150A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

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Abstract

The invention provides a light emitting device. The light emitting device includes a lead frame. The lead frame includes a first wiring lead frame having a first die pad and a second wiring lead frame having a second die pad. A first light emitting chip and a second light emitting chip are respectively disposed on the first and second die pads. A bonding composite structure is disposed between a surface of one of the first and second wiring lead frames, between the first and second die pads. The bonding composite structure includes an insulating layer and a conductive layer disposed on the insulating layer. The conductive layer electrically connects to the first and second light emitting chips, so that the first and second light emitting chips are connected in series.

Description

發光裝置Illuminating device

本發明係有關於一種發光裝置,特別係有關於一種串聯設計的發光二極體封裝結構的接線配置。The present invention relates to a light-emitting device, and more particularly to a wiring arrangement of a light-emitting diode package structure of a series design.

習知串聯設計的發光二極體封裝結構主要具有兩種類型。第一種類型為直接使用金線串聯兩顆以上的發光二極體晶片。然而,較長的金線需要較高的成本,且會承受更大的膠材內應力。並且,每一個發光二極體晶片具有兩個焊點,為了避免傷害發光二極體晶片,進行打線製程(wire bonding)時,需調整降低相關壓力參數,但會造成金線拉力降低的風險。另一種類型為在射出成形製程形成支架時,於支架上設計與發光二極體的置晶座和導電支架隔絕的安全島,作為金線串聯的中繼點,上述安全島在射出成形製程期間會設計以一額外連接部分與導線支架相連,再於後續製程截斷上述連接部分。然而,上述額外連接部分會延伸至導線支架的外側而使導線支架會具有一額外突出部分,因而產生額外的支架模具費用。並且,上述額外突出部分會影響封裝結構的外觀,因而需重新設計量產生產線的分類和輸送帶軌道。此外,上述額外突出部分會使發光二極體封裝結構的電路迴路經過上述額外的突出部分而不會經過原始設計於導線支架的正極或負極和設計於導線支架上的齊納二極體(Zener diode),因而會使齊納二極體無法產生電路迴路保護作用而造成發光二極體燒毀。There are two main types of light-emitting diode package structures that are conventionally designed in series. The first type is to directly connect two or more light emitting diode chips in series using gold wires. However, longer gold wires require higher costs and can withstand greater internal stress in the glue. Moreover, each of the light-emitting diode wafers has two solder joints. In order to avoid damage to the light-emitting diode wafers, when the wire bonding is performed, it is necessary to adjust and lower the relevant pressure parameters, but the risk of the gold wire pulling force is lowered. Another type is to design a safety island isolated from the crystal holder and the conductive bracket of the light-emitting diode when forming the bracket in the injection molding process, as a relay point of the gold wire series connection, the safety island during the injection molding process It is designed to be connected to the wire holder with an additional connection portion, and the connection portion is cut off in a subsequent process. However, the additional connecting portion described above extends to the outside of the wire holder such that the wire holder will have an additional projection, thereby creating additional stent mold costs. Moreover, the above-mentioned additional protruding portions may affect the appearance of the package structure, and thus it is necessary to redesign the amount to produce the classification of the production line and the conveyor belt track. In addition, the above-mentioned additional protruding portion causes the circuit loop of the light-emitting diode package structure to pass through the above-mentioned additional protruding portion without passing through the positive electrode or the negative electrode originally designed on the wire holder and the Zener diode designed on the wire holder (Zener Diode), thus causing the Zener diode to fail to create circuit loop protection and causing the LED to burn out.

在此技術領域中,有需要一種串聯設計的發光二極體封裝結構,以提高發光二極體封裝結構的使用壽命及避免增加製程成本。In this technical field, there is a need for a light-emitting diode package structure designed in series to improve the service life of the light-emitting diode package structure and to avoid an increase in process cost.

有鑑於此,本發明一實施例係提供一種發光裝置,包括一支架,其包括彼此分離之一具有一第一置晶座之第一導線支架和一具有一第二置晶座之第二導線支架;一第一發光晶片和一第二發光晶片,分別置於上述第一和第二置晶座上;一接合複合結構,設置於上述第一、第二置晶座之間的上述第一導線支架或上述第二導線支架其中之一的一表面上,其中上述接合複合結構包括一絕緣層;一導電層,堆疊於上述絕緣層上,其中上述導電層電性連接至上述第一發光晶片和上述第二發光晶片,以使上述第一、第二發光晶片達到串聯。In view of this, an embodiment of the present invention provides a light emitting device including a bracket including a first wire holder having a first crystal holder and a second wire having a second crystal holder. a first light emitting chip and a second light emitting chip respectively disposed on the first and second crystal holders; and a bonding composite structure disposed on the first between the first and second crystal holders And a conductive layer is stacked on the insulating layer, wherein the conductive layer is electrically connected to the first light emitting chip. And the second illuminating wafer, wherein the first and second illuminating wafers are brought into series.

本發明另一實施例係提供一種發光裝置,包括一支架,其包括彼此分離之一具有一第一置晶座之第一導線支架和一具有一第二置晶座之第二導線支架;一第一發光晶片和一第二發光晶片,分別置於上述第一和第二置晶座上;一接合複合結構,設置於上述第一和第二導線支架間之間的凹槽內,其中上述接合複合結構包括一絕緣層;一導電層,堆疊於上述絕緣層上,其中上述導電層電性連接至上述第一發光晶片和上述第二發光晶片,以使上述第一、第二發光晶片達到串聯。Another embodiment of the present invention provides a light emitting device including a bracket including a first wire holder having a first crystal holder and a second wire holder having a second crystal holder. a first light emitting chip and a second light emitting chip are respectively disposed on the first and second crystal holders; a joint composite structure is disposed in the groove between the first and second wire holders, wherein the The bonding composite structure includes an insulating layer; a conductive layer is stacked on the insulating layer, wherein the conductive layer is electrically connected to the first light emitting chip and the second light emitting chip, so that the first and second light emitting wafers are In series.

以下以各實施例詳細說明並伴隨著圖式說明之範例,做為本發明之參考依據。在圖式或說明書描述中,相似或相同之部分皆使用相同之圖號。且在圖式中,實施例之形狀或是厚度可擴大,並以簡化或是方便標示。再者,圖式中各元件之部分將以分別描述說明之,值得注意的是,圖中未繪示或描述之元件,為所屬技術領域中具有通常知識者所知的形式,另外,特定之實施例僅為揭示本發明使用之特定方式,其並非用以限定本發明。The following is a detailed description of the embodiments and examples accompanying the drawings, which are the basis of the present invention. In the drawings or the description of the specification, the same drawing numbers are used for similar or identical parts. In the drawings, the shape or thickness of the embodiment may be expanded and simplified or conveniently indicated. In addition, the components of the drawings will be described separately, and it is noted that the components not shown or described in the drawings are known to those of ordinary skill in the art, and in particular, The examples are merely illustrative of specific ways of using the invention and are not intended to limit the invention.

本發明實施例係提供一種發光裝置,特別是具有包括至少兩個發光二極體(light emitting diode)串聯而成的封裝結構,其於承載上述兩個發光二極體的不同導線支架之間,或其中一個導線支架上設置用以電性連接上述兩個發光二極體的一接合複合結構,以利於縮短用以串聯發光二極體之打金線的長度。第1a圖為本發明一實施例之發光裝置500a的上視圖。第1b圖為本發明一實施例之發光裝置500a的剖面圖。為了方便顯示發光裝置500a的接線配置,發光裝置500a的封裝材料在第1a圖(上視圖)不予顯示。如第1a~1b圖所示,本發明實施例之發光裝置500a可包括一支架200,其包括彼此分離之一具有一第一置晶座202之第一導線支架302和一具有一第二置晶座204之第二導線支架304。在本發明一實施例中,可利用射出成形方式形成支架200。一第一發光晶片206和一第二發光晶片208,分別置於第一置晶座202和第二置晶座204上。在本發明一實施例中,第一發光晶片206和一第二發光晶片208可包括發光二極體(light emitting diode,LED)。第一發光晶片206具有極性相反的一第一電極218a和第二電極218b,皆位於第一發光晶片206的上表面。另外,第二發光晶片208具有極性相反的一第三電極220a與一第四電極220b,皆位於第二發光晶片208的上表面。在本發明一實施例中,第一電極218a和第三電極220a為正極,且第二電極218b和第四電極220b為負極。The embodiment of the invention provides a light-emitting device, in particular, a package structure comprising at least two light emitting diodes connected in series, between different wire supports carrying the two light-emitting diodes, Or one of the wire holders is provided with a joint composite structure for electrically connecting the two light emitting diodes, so as to shorten the length of the gold wire for the series light emitting diodes. Fig. 1a is a top view of a light-emitting device 500a according to an embodiment of the present invention. Fig. 1b is a cross-sectional view showing a light-emitting device 500a according to an embodiment of the present invention. In order to facilitate the display of the wiring arrangement of the light-emitting device 500a, the packaging material of the light-emitting device 500a is not shown in FIG. 1a (top view). As shown in FIG. 1a to FIG. 1b, the light-emitting device 500a of the embodiment of the present invention may include a bracket 200 including a first wire holder 302 having a first crystal holder 202 and a second portion separated from each other. The second wire holder 304 of the crystal holder 204. In an embodiment of the invention, the stent 200 can be formed by injection molding. A first luminescent wafer 206 and a second luminescent wafer 208 are disposed on the first pedestal 202 and the second pedestal 204, respectively. In an embodiment of the invention, the first luminescent wafer 206 and the second luminescent wafer 208 may comprise a light emitting diode (LED). The first luminescent wafer 206 has a first electrode 218a and a second electrode 218b of opposite polarities, all located on the upper surface of the first luminescent wafer 206. In addition, the second illuminating wafer 208 has a third electrode 220a and a fourth electrode 220b of opposite polarities, all located on the upper surface of the second illuminating wafer 208. In an embodiment of the invention, the first electrode 218a and the third electrode 220a are positive electrodes, and the second electrode 218b and the fourth electrode 220b are negative electrodes.

為了縮短串聯發光晶片的焊線長度,可於形成支架200的模具中設計一凹槽222,設置於第一導線支架302和第二導線支架304之間。因此,經過射出成型製程形成的支架200會具有凹槽222,並於凹槽222內設置一接合複合結構210。如第1b圖所示,在本發明一實施例中,接合複合結構210的頂面可一不高於第一導線支架302和第二導線支架304的頂面。第3圖為本發明一實施例之接合複合結構210的示意圖。如第3圖所示,在本發明一實施例中,接合複合結構210可為一絕緣層-導電層複合結構,其包括一絕緣層214,以及堆疊於絕緣層214上一導電層216。在本發明一實施例中,可利用將一絕緣材料切割成具合適形狀的絕緣層214。之後,進行一電鍍製程,於上述絕緣層214的一表面上形成導電層216之方式形成接合複合結構210。在本發明一實施例中,絕緣材料可包括藍寶石、玻璃、氧化矽或氮化矽,而導電層216之材質可包括例如金或銀之金屬。In order to shorten the wire length of the tandem light-emitting chip, a groove 222 may be formed in the mold forming the bracket 200, and disposed between the first wire holder 302 and the second wire holder 304. Therefore, the stent 200 formed by the injection molding process will have a recess 222 and a joint composite structure 210 disposed in the recess 222. As shown in FIG. 1b, in an embodiment of the invention, the top surface of the joint composite structure 210 may be no higher than the top surfaces of the first wire holder 302 and the second wire holder 304. Figure 3 is a schematic illustration of a bonded composite structure 210 in accordance with one embodiment of the present invention. As shown in FIG. 3, in an embodiment of the invention, the bonding composite structure 210 can be an insulating layer-conductive layer composite structure including an insulating layer 214 and a conductive layer 216 stacked on the insulating layer 214. In an embodiment of the invention, an insulating material 214 can be cut into a suitable shape. Thereafter, an electroplating process is performed to form the bonding composite structure 210 by forming a conductive layer 216 on one surface of the insulating layer 214. In an embodiment of the invention, the insulating material may comprise sapphire, glass, tantalum oxide or tantalum nitride, and the material of the conductive layer 216 may comprise a metal such as gold or silver.

如第1a~1b圖所示,接合複合結構210的導電層216係分別藉由焊線224、226電性連接至第一發光晶片206的第二電極218b和第二發光晶片208的第三電極220a。另外,焊線230分別電性連接第一導線支架302和第一發光晶片206的第一電極218a,焊線232分別電性連接第二導線支架304和第二發光晶片208的第四電極220b,以使第一發光晶片206和第二發光晶片208達到串聯。在本發明一實施例中,當第一電極218a和第三電極220a為正極,且第二電極218b和第四電極220b為負極時,第一導線支架302可視為正極導線支架302,第二導線支架304可視為負極導線支架304。在本發明一實施例中,接合複合結構210的導電層216不具極性。As shown in FIGS. 1a-1b, the conductive layer 216 of the bonded composite structure 210 is electrically connected to the second electrode 218b of the first luminescent wafer 206 and the third electrode of the second luminescent wafer 208 by bonding wires 224, 226, respectively. 220a. In addition, the bonding wires 230 are electrically connected to the first wire holder 302 and the first electrode 218a of the first light emitting chip 206, respectively, and the bonding wires 232 are electrically connected to the second wire holder 304 and the fourth electrode 220b of the second light emitting chip 208, respectively. The first luminescent wafer 206 and the second luminescent wafer 208 are brought into series. In an embodiment of the invention, when the first electrode 218a and the third electrode 220a are positive electrodes, and the second electrode 218b and the fourth electrode 220b are negative electrodes, the first wire holder 302 can be regarded as a positive wire holder 302, and the second wire The bracket 304 can be considered as a negative lead bracket 304. In an embodiment of the invention, the conductive layer 216 of the bonded composite structure 210 is non-polar.

如第1a圖所示,發光裝置500a更包括一齊納二極體228,設置於第一導線支架302或第二導線支架304的表面上,並電性連接第一導線支架302和第二導線支架304。在本實施例中,齊納二極體228設置於第一導線支架302的表面上,藉由焊線234電性連接第二導線支架304。在本發明一實施例中,齊納二極體228係用以保護的串聯第一發光晶片206和第二發光晶片208的電路迴路。在本發明一實施例中,齊納二極體228可為一雙向齊納二極體。As shown in FIG. 1a, the illuminating device 500a further includes a Zener diode 228 disposed on the surface of the first wire holder 302 or the second wire holder 304 and electrically connected to the first wire holder 302 and the second wire holder. 304. In the present embodiment, the Zener diode 228 is disposed on the surface of the first wire holder 302, and the second wire holder 304 is electrically connected by the bonding wire 234. In one embodiment of the invention, Zener diode 228 is used to protect the circuit loops of series first light emitting wafer 206 and second light emitting wafer 208. In an embodiment of the invention, the Zener diode 228 can be a bidirectional Zener diode.

如第1b圖所示,發光裝置500a更包括一封裝材料236,包覆第一導線支架302、第二導線支架304、第一發光晶片206、第二發光晶片208、接合複合結構210、齊納二極體228和焊線224、226、230、232、234,以保護發光裝置500a。在本發明一實施例中,封裝材料236可包括例如聚鄰苯二酰胺(PPA)之高分子材料。As shown in FIG. 1b, the light-emitting device 500a further includes a packaging material 236 covering the first wire holder 302, the second wire holder 304, the first light-emitting chip 206, the second light-emitting chip 208, the joint composite structure 210, and the Zener. The diode 228 and the bonding wires 224, 226, 230, 232, 234 protect the light emitting device 500a. In an embodiment of the invention, encapsulating material 236 may comprise a polymeric material such as polyphthalamide (PPA).

第2圖為本發明另一實施例之發光裝置500b的上視圖。類似地,為了方便顯示發光裝置500b的接線配置,發光裝置500b的封裝材料在第2圖(上視圖)不予顯示。發光裝置500b和第1圖所示的發光裝置500a兩者之間的不同處為,發光裝置500b的接合複合結構210可以設置於第一置晶座202和第二置晶座204之間的第一導線支架302或第二導線支架304其中之一的表面,而不設置於支架200的凹槽內。另外,齊納二極體228係設置於相異於接合複合結構210所在之第一導線支架302或第二導線支架304表面上。在本實施例中,接合複合結構210係設置位於第一置晶座202和第二置晶座204之間的第二導線支架304的表面212上,更詳細的說,絕緣層214位在第二導線支架304的表面上,導電層216堆疊於絕緣層214上,而齊納二極體228係設置於第一導線支架302的表面上。Fig. 2 is a top view of a light-emitting device 500b according to another embodiment of the present invention. Similarly, in order to facilitate display of the wiring configuration of the light-emitting device 500b, the packaging material of the light-emitting device 500b is not shown in FIG. 2 (top view). The difference between the light-emitting device 500b and the light-emitting device 500a shown in FIG. 1 is that the joint composite structure 210 of the light-emitting device 500b can be disposed between the first crystal holder 202 and the second crystal holder 204. The surface of one of the wire holder 302 or the second wire holder 304 is not disposed in the groove of the holder 200. In addition, the Zener diode 228 is disposed on the surface of the first wire holder 302 or the second wire holder 304 that is different from the joint composite structure 210. In the present embodiment, the bonding composite structure 210 is disposed on the surface 212 of the second wire holder 304 between the first crystal holder 202 and the second crystal holder 204. In more detail, the insulating layer 214 is located at the On the surface of the two wire holders 304, a conductive layer 216 is stacked on the insulating layer 214, and a Zener diode 228 is disposed on the surface of the first wire holder 302.

本發明實施例係提供一種發光裝置,特別是包括至少兩個發光二極體(LED)串聯而成的封裝結構,其於承載上述兩個發光二極體的不同導線支架之間,或其中一個導線支架上設置用以電性連接上述兩個發光二極體的一接合複合結構,以利於縮短用以串聯發光二極體之打線的長度,且可改善習知射出成型的支架因提供額外接合區域(安全島)所形成的額外突出部分造成支架外觀不對稱而影響產品外觀、增加支架模具費用、且使齊納二極體無法完全發揮功能等問題。另外,本發明實施例的發光裝置可以增加發光二極體串聯電路的靜電放電(ESD)防護能力,提高發光二極體封裝結構的使用壽命及避免增加製程成本,且無須更改原產品設計可直接導入應用。The embodiment of the invention provides a light-emitting device, in particular, a package structure comprising at least two light-emitting diodes (LEDs) connected in series, between different wire supports carrying the two light-emitting diodes, or one of them The wire holder is provided with a joint composite structure for electrically connecting the two light emitting diodes, so as to shorten the length of the wire for the series light emitting diodes, and the conventional injection molding bracket can be improved by providing additional joints. The extra protrusion formed by the area (safety island) causes the asymmetry of the stent to affect the appearance of the product, increase the cost of the stent mold, and prevent the Zener diode from fully functioning. In addition, the illuminating device of the embodiment of the invention can increase the electrostatic discharge (ESD) protection capability of the LED series circuit, improve the service life of the LED package structure and avoid increasing the process cost, and can directly change the original product design. Import the app.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何熟習此技藝者,在不脫離本發明之精神和範圍內,當可作些許之更動與潤飾,因此本發明之保護範圍當視後附之申請專利範圍所界定為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope is defined as defined in the scope of the patent application.

500a、500b...發光裝置500a, 500b. . . Illuminating device

200...支架200. . . support

202...第一置晶座202. . . First crystal holder

302...第一導線支架302. . . First wire bracket

204...第二置晶座204. . . Second crystal holder

304...第二導線支架304. . . Second wire bracket

206...第一發光晶片206. . . First light emitting chip

208...第二發光晶片208. . . Second light emitting chip

210...接合複合結構210. . . Joint composite structure

212...表面212. . . surface

214...絕緣層214. . . Insulation

216...導電層216. . . Conductive layer

218a...第一電極218a. . . First electrode

218b...第二電極218b. . . Second electrode

220a...第三電極220a. . . Third electrode

220b...第四電極220b. . . Fourth electrode

222...凹槽222. . . Groove

224、226、230、232、234...焊線224, 226, 230, 232, 234. . . Welding wire

228...齊納二極體228. . . Zener diode

236...封裝材料236. . . Packaging material

第1a圖為本發明一實施例之發光裝置的上視圖。Fig. 1a is a top view of a light emitting device according to an embodiment of the present invention.

第1b圖為本發明一實施例之發光裝置的剖面圖。Fig. 1b is a cross-sectional view showing a light-emitting device according to an embodiment of the present invention.

第2圖為本發明另一實施例之發光裝置的上視圖。Fig. 2 is a top view of a light-emitting device according to another embodiment of the present invention.

第3圖為本發明一實施例之接合複合結構的示意圖。Figure 3 is a schematic view of a bonded composite structure in accordance with one embodiment of the present invention.

500a...發光裝置500a. . . Illuminating device

200...支架200. . . support

202...第一置晶座202. . . First crystal holder

302...第一導線支架302. . . First wire bracket

204...第二置晶座204. . . Second crystal holder

304...第二導線支架304. . . Second wire bracket

206...第一發光晶片206. . . First light emitting chip

208...第二發光晶片208. . . Second light emitting chip

210...接合複合結構210. . . Joint composite structure

218a...第一電極218a. . . First electrode

218b...第二電極218b. . . Second electrode

220a...第三電極220a. . . Third electrode

220b...第四電極220b. . . Fourth electrode

222...凹槽222. . . Groove

224、226、230、232、234...焊線224, 226, 230, 232, 234. . . Welding wire

228...齊納二極體228. . . Zener diode

Claims (19)

一種發光裝置,包括:一支架,其包括彼此分離之一具有一第一置晶座之第一導線支架和一具有一第二置晶座之第二導線支架;一第一發光晶片和一第二發光晶片,分別置於該第一和第二置晶座上;以及一接合複合結構,設置於該第一、第二置晶座之間的該第一導線支架或該第二導線支架其中之一的一表面上,其中該接合複合結構包括:一絕緣層;以及一導電層,堆疊於該絕緣層上,其中該導電層電性連接至該第一發光晶片和該第二發光晶片,以使該第一、第二發光晶片達到串聯。A light-emitting device includes: a bracket including a first wire holder having a first crystal holder and a second wire holder having a second crystal holder; a first light-emitting chip and a first Two illuminating wafers respectively disposed on the first and second crystal holders; and a bonding composite structure disposed in the first lead frame or the second lead bracket between the first and second crystal holders On one surface, the bonded composite structure includes: an insulating layer; and a conductive layer stacked on the insulating layer, wherein the conductive layer is electrically connected to the first light emitting chip and the second light emitting chip, The first and second luminescent wafers are brought into series. 如申請專利範圍第1項所述之發光裝置,其中該絕緣層之材質包括藍寶石、玻璃、氧化矽或氮化矽。The illuminating device of claim 1, wherein the material of the insulating layer comprises sapphire, glass, yttria or tantalum nitride. 如申請專利範圍第1項所述之發光裝置,其中該導電層之材質為金屬。The illuminating device of claim 1, wherein the conductive layer is made of metal. 如申請專利範圍第1項所述之發光裝置,其中該接合複合結構的該絕緣層位在該第一導線支架或該第二導線支架的該表面。The illuminating device of claim 1, wherein the insulating layer of the bonding composite structure is located on the surface of the first wire holder or the second wire holder. 如申請專利範圍第1項所述之發光裝置,其中第一發光晶片具有一第一電極與一第二電極,該第二發光晶片具有一第三電極與一第四電極。The illuminating device of claim 1, wherein the first illuminating wafer has a first electrode and a second electrode, and the second illuminating wafer has a third electrode and a fourth electrode. 如申請專利範圍第5項所述之發光裝置,更包括:一第一焊線,分別電性連接該第一導線支架和該第一發光晶片的該第一電極;一第二焊線,分別電性連接該導電層和該第一發光晶片的該第二電極;一第三焊線,分別電性連接該導電層和該第二發光晶片的該第三電極;以及一第四焊線,分別電性連接該第二導線支架和該第二發光晶片的該第四電極。The illuminating device of claim 5, further comprising: a first bonding wire electrically connected to the first wire holder and the first electrode of the first illuminating wafer; and a second bonding wire, respectively Electrically connecting the conductive layer and the second electrode of the first light-emitting chip; a third bonding wire electrically connecting the conductive layer and the third electrode of the second light-emitting chip respectively; and a fourth bonding wire, The second lead holder and the fourth electrode of the second illuminating wafer are electrically connected respectively. 如申請專利範圍第6項所述之發光裝置,其中該第一、第三電極為正極,且該第二、第四電極為負極。The illuminating device of claim 6, wherein the first and third electrodes are positive electrodes, and the second and fourth electrodes are negative electrodes. 如申請專利範圍第1~7項中任一項所述之發光裝置,更包括一齊納二極體,設置於相異於該接合複合結構所在之該第一或第二導線支架表面上。The illuminating device according to any one of claims 1 to 7, further comprising a Zener diode disposed on a surface of the first or second wire holder different from the joint structure. 如申請專利範圍第8項所述之發光裝置,其中該齊納二極體電性連接該第一和第二導線支架。The illuminating device of claim 8, wherein the Zener diode is electrically connected to the first and second lead supports. 如申請專利範圍第8項所述之發光裝置,其中該齊納二極體是一雙向齊納二極體。The illuminating device of claim 8, wherein the Zener diode is a bidirectional Zener diode. 一種發光裝置,包括:一支架,其包括彼此分離之一具有一第一置晶座之第一導線支架和一具有一第二置晶座之第二導線支架;一第一發光晶片和一第二發光晶片,分別置於該第一和第二置晶座上;以及一接合複合結構,設置於該第一和第二導線支架間之間的凹槽內,其中該接合複合結構包括:一絕緣層;以及一導電層,堆疊於該絕緣層上,其中該導電層電性連接至該第一發光晶片和該第二發光晶片,以使該第一、第二發光晶片達到串聯。A light-emitting device includes: a bracket including a first wire holder having a first crystal holder and a second wire holder having a second crystal holder; a first light-emitting chip and a first Two illuminating wafers respectively disposed on the first and second crystal holders; and a bonding composite structure disposed in the groove between the first and second wire holders, wherein the bonding composite structure comprises: An insulating layer; and a conductive layer stacked on the insulating layer, wherein the conductive layer is electrically connected to the first light emitting wafer and the second light emitting wafer, so that the first and second light emitting wafers are connected in series. 如申請專利範圍第11項所述之發光裝置,其中該絕緣層之材質包括藍寶石、玻璃、氧化矽或氮化矽。The illuminating device of claim 11, wherein the material of the insulating layer comprises sapphire, glass, yttria or tantalum nitride. 如申請專利範圍第11項所述之發光裝置,其中該導電層之材質為金屬。The illuminating device of claim 11, wherein the conductive layer is made of metal. 如申請專利範圍第11項所述之發光裝置,其中第一發光晶片具有一第一電極與一第二電極,該第二發光晶片具有一第三電極與一第四電極。The illuminating device of claim 11, wherein the first illuminating wafer has a first electrode and a second electrode, and the second illuminating wafer has a third electrode and a fourth electrode. 如申請專利範圍第14項所述之發光裝置,更包括:一第一焊線,分別電性連接該第一導線支架和該第一發光晶片的該第一電極,一第二焊線,分別電性連接該導電層和該第一發光晶片的該第二電極;一第三焊線,分別電性連接該導電層和該第二發光晶片的該第三電極;以及一第四焊線,分別電性連接該第二導線支架和該第二發光晶片的該第四電極。The illuminating device of claim 14, further comprising: a first bonding wire electrically connected to the first wire holder and the first electrode of the first illuminating wafer, and a second bonding wire, respectively Electrically connecting the conductive layer and the second electrode of the first light-emitting chip; a third bonding wire electrically connecting the conductive layer and the third electrode of the second light-emitting chip respectively; and a fourth bonding wire, The second lead holder and the fourth electrode of the second illuminating wafer are electrically connected respectively. 如申請專利範圍第15項所述之發光裝置,其中該第一、第三電極為正極,且該第二、第四電極為負極。The illuminating device of claim 15, wherein the first and third electrodes are positive electrodes, and the second and fourth electrodes are negative electrodes. 如申請專利範圍第11~16項中任一項所述之發光裝置,更包括一齊納二極體,設置於相異於該接合複合結構所在之該第一或第二導線支架表面上。The illuminating device of any one of the preceding claims, further comprising a Zener diode disposed on the surface of the first or second wire holder different from the joint composite structure. 如申請專利範圍第17項所述之發光裝置,其中該齊納二極體電性連接該第一和第二導線支架。The illuminating device of claim 17, wherein the Zener diode is electrically connected to the first and second lead supports. 如申請專利範圍第18項所述之發光裝置,其中該齊納二極體是一雙向齊納二極體。The illuminating device of claim 18, wherein the Zener diode is a bidirectional Zener diode.
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