TW201330015A - 透明導電薄膜 - Google Patents

透明導電薄膜 Download PDF

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TW201330015A
TW201330015A TW101100359A TW101100359A TW201330015A TW 201330015 A TW201330015 A TW 201330015A TW 101100359 A TW101100359 A TW 101100359A TW 101100359 A TW101100359 A TW 101100359A TW 201330015 A TW201330015 A TW 201330015A
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layer
transparent conductive
conductive film
silver
conductive
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Chj-Don Teng
Wei-Lun Hsu
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Mke Technology Co Ltd
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Priority to TW101100359A priority Critical patent/TW201330015A/zh
Priority to US13/729,846 priority patent/US8642166B2/en
Publication of TW201330015A publication Critical patent/TW201330015A/zh

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    • C03C17/3678Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
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Abstract

一種透明導電薄膜,其包含銀-錫化三銀-氧化錫之至少一疊層、或銀-錫化四銀-氧化錫之至少一疊層。

Description

透明導電薄膜
本發明係關於一種透明導電薄膜。
舉凡現有半導體光電裝置,例如顯示裝置、觸控裝置、發光裝置或光伏電池,其皆具有一導電基板以協助電子的傳遞。其中,導電基板包含一透光導電薄膜以及一基板,透光導電薄膜設置於基板上。透光導電薄膜又稱為透光導電氧化物(TCO),這是因為現有的透光導電薄膜之材料主要為金屬氧化物,常用的材料有ITO、In2O3、SnO2、ZnO、CdO、AZO、及IZO等。
然而,現有的透光導電薄膜雖然可達到透光目的,但其電阻值卻太高,可達到10~100Ω/sq,這也造成訊號傳遞速度以及反應速度下降,因而使產品效能降低。故,現在業界極力發展具有低電阻值之材料來製造透光導電薄膜。
有鑑於上述課題,本發明之目的為提供一種能夠降低電阻值之透明導電薄膜。
為達上述目的,依據本發明之一種透明導電薄膜,其包含銀-錫化三銀-氧化錫之至少一疊層、或銀-錫化四銀-氧化錫之至少一疊層。
在一實施例中,銀層之厚度係介於2nm至15nm之間。
在一實施例中,錫化三銀層或該錫化四銀層之厚度係介於1nm至3nm之間。
在一實施例中,透明導電薄膜可濾除紅外光或紫外光。
在一實施例中,透明導電薄膜可應用於一觸控面板、一顯示面板或一光伏電池。
在一實施例中,透明導電薄膜更包含一結構層,其鄰設於該銀層或該氧化錫層。在一實施例中,結構層為單一層或一疊層。
在一實施例中,結構層包含金屬、金屬氧化物、光學材料、陶瓷、或其組合。
在一實施例中,至少一疊層係與結構層相互疊設。
在一實施例中,當結構層為複數時,至少一疊層係設置於該等結構層之間。
承上所述,藉由不斷的努力與研究,將透明導電薄膜的材料改成錫化三銀或錫化四銀,即可大幅增加透明導電薄膜的導電率並使電阻值下降。本發明之透明導電薄膜包含銀-錫化三銀-氧化錫之至少一疊層、或銀-錫化四銀-氧化錫之至少一疊層,使得電阻值可例如降低至1Ω/平方,進而大幅提升訊號傳遞與反應速度。此外,含有錫化三銀或錫化四銀之透光導電薄膜亦可達到濾除紅外光(IR-Cut)及/或濾除紫外光(UV-Cut)之功效。藉由濾除紅外光或紫外光,使得應用本發明之半導體光電裝置(例如光伏電池、觸控面板或顯示面板)能夠避免紅外光或紫外光照射所造成的黃化。
以下將參照相關圖式,說明依本發明較佳實施例之一種導電基板以及光伏電池,其中相同的元件將以相同的參照符號加以說明。
圖1A為本發明較佳實施例之一種透明導電薄膜12的示意圖。透明導電薄膜12包含錫化三銀(Ag3Sn)或錫化四銀(Ag4Sn)。透明導電薄膜12可例如包含銀-錫化三銀-氧化錫之至少一疊層(stack layers)、或銀-錫化四銀-氧化錫之至少一疊層;於此係以包含銀層122-錫化三銀層123-氧化錫層124之一疊層為例。當然,在錫化三銀層123中或許也會含有錫化四銀。其中,銀層123的厚度可例如介於2nm至15nm之間;錫化三銀層123或錫化四銀層之厚度可例如介於1nm至3nm之間;氧化錫層124可例如為SnO2或SnO。
圖1B為本發明較佳實施例之另一種透明導電薄膜12a的示意圖。其中,透明導電薄膜12a更包含一結構層121,其係鄰設於銀層122。結構層121可為單一層或一複合層。結構層121可例如包含金屬、金屬氧化物、光學材料、陶瓷、或其組合。其中,金屬例如銀或銅;金屬氧化物例如氧化鋅(ZnO)、氧化錫(SnO或SnO2)、氧化銦錫(ITO)、氧化鋅鎵(GZO)、氧化錫銻(ATO);光學材料如二氧化鈦(TiO2);陶瓷例如二氧化矽(SiO2)。上述僅為舉例,並非用以限制本發明。
圖1C為本發明較佳實施例之另一種透明導電薄膜12b的示意圖。其中,透明導電薄膜12b之一結構層121係鄰設於氧化錫層123。
圖1D為本發明較佳實施例之另一種透明導電薄膜12c的示意圖。其中,透明導電薄膜12b包含銀層122-錫化三銀層123-氧化錫層124之相同的二疊層,且結構層121位於該等疊層之間。
圖1E為本發明較佳實施例之另一種透明導電薄膜12d的示意圖。其中,透明導電薄膜12b包含銀層122-錫化三銀層123-氧化錫層124之一疊層以及二結構層121,且疊層設置於二結構層121之間。該等結構層121可相同或不相同。
圖1A至圖1E僅為舉例說明本實施例之透明導電薄膜,其可包含更多種變化態樣,例如可有更多疊層、或改變結構層121之位置等等。
圖2為本發明較佳實施例之一種透明導電薄膜12設置於一基板11的示意圖;於此僅為舉例,上述透明導電薄膜12a~12d的態樣皆可設置於基板11上。其中,基板11之材質可例如包含玻璃、陶瓷、金屬或塑膠,塑膠例如為聚對苯二甲酸乙二酯(polyethylene terephthalate,PET),而基板11可透光或不透光。
透明導電薄膜12係經過熱製程才能形成介金屬(錫化三銀或錫化四銀)(Intermetal)。首先,在基板11上依序形成銀-錫-氧化錫之疊層,然後進行加熱製程。圖3A及圖3B為熱擴散以形成介金屬之示意圖,其中A代表銀、B代表錫,但請注意,圖3A之銀層與錫層為左右排列僅為清楚說明介金屬形成過程,而非用以限制本發明。如圖3A至圖3B所示,在熱製程中,銀A與錫B會進行熱擴散(thermal diffusion)而形成介金屬(錫化三銀Ag3Sn或錫化四銀Ag4Sn),也就是A與B交錯設置之處。
在製程中,若銀氧化會嚴重影響透明導電薄膜12之電性。然而,錫受到高溫影響後很容易與銀相互結合成介金屬Ag3Sn或Ag4Sn,由於Ag3Sn或Ag4Sn相當穩定,因此也能阻擋銀因受熱而氧化,並形成Ag-Ag3Sn-SnO或Ag-Ag4Sn-SnO之疊層。
據此,透明導電薄膜12之電阻值可降低至1Ω/平方,而大幅提升訊號傳遞與反應速度。此外,含有透明導電薄膜12亦可達到濾除紅外光(IR-Cut)或濾除紫外光(UV-Cut)之功效。
另外,透明導電薄膜12可依產品設計的需求而為一平坦層或一圖案層。例如,當作為液晶面板中的濾光基板的共同電極層時,其為平坦層;而當作為觸控裝置中的觸控電極時,則可形成為圖案層。
本實施例不特別限制透明導電薄膜12~12d的應用範圍,其可例如應用於半導體光電裝置,例如一顯示面板、一觸控面板、一光伏電池或一發光裝置。以下係以光伏電池來說明,特別是光伏電池中的染料敏化太陽能電池(dye sensitized solar cell,DSSC)。
圖4為本發明較佳實施例之一種染料敏化太陽能電池2的示意圖,染料敏化太陽能電池2係包含一第一導電基板201、一染料層203、一第一導電層205以及一第二導電基板202。
本實施例之第一導電基板201及/或第二導電基板202係可具有透明導電薄膜12~12d,而成為導電基板。由於透明導電薄膜12~12d已於上詳述,故於此不再贅述。於此,太陽光線係由第一導電基板201入射,故第一導電基板201之基板為可透光,而第二導電基板202之基板則可為透光或不透光。
染料層203設置於第一導電基板201上。染料層203係構成本實施例之光電轉換材料之一部分。染料層203係具有複數染料部P。在形成染料層203時,可先將一染料吸附層(例如二氧化鈦)塗佈於第一導電基板201上,再設置染料,以讓二氧化鈦吸附染料而形成染料層203。當吸收光時,染料層203會產生電子,而電子會傳遞至導電基板201、202上的透明導電薄膜(圖未顯示)。於此,染料層203中的染料可例如包含釕(Ru)等金屬錯合物色素、或是甲基、酞菁等有機色素。
第一導電層205設置於第一導電基板201上並位於染料部P之周圍。第一導電層205之材質係以銀膠為例,其可為其他材質的導電膠,例如鋁膠或銅膠。形成第一導電層205的方式可為印刷、塗佈或點膠,藉由第一導電層205的設置,能夠協助染料部P電子的傳遞。於此,染料部P所產生的電子,會先傳遞至第一導電基板201上的透明導電薄膜,再由透明導電薄膜傳遞至第一導電層205。
第一導電層205位於染料層203之周圍。於此,第一導電層205與染料層203之一間距D係介於0.5mm至50mm,較佳者係介於1mm至10mm。據驗證,這樣的特徵使得本實施例之發電效能得到較佳的效果;當然,隨著不同的實施態樣,間距D可被調整。
另外,染料敏化太陽能電池2可更包含一絕緣保護層S,其設置於第一導電層205上。絕緣保護層S之材質例如包含玻璃膠(glass paste),其可為含鉍氧化物,用以減少一部分之第一導電層205的氧化,並形成電性的絕緣。
另外,在第一導電層205最外圍的一側,通常有一集電部C1(於此以長條狀為例),用以匯集染料敏化太陽能電池2的電流,並作為電池的正極或負極,以與相鄰的染料敏化太陽能電池或外部的控制電路電性串連或並聯。
另外,第一導電基板201更設置有一第一導電通孔211,並且一第一導線209經由第一導電通孔211與第一導電基板201電性連結。第一導線209可為一印刷導線或一實體導線,於此係以實體的導線為例,且於第一導電通孔211內填設導電焊料,並分別焊接使得第一導電通孔211能與第一導線209電性連結。此外,第一導電通孔211藉由第一導電層205與第一導電基板201電性連接。第一導電層205之一部分(集電部C1)係直接與第一導電通孔211相連結。當然,讓光伏電池2與相鄰電池電性連結,也可利用導線直接連結集電部C1,而與相鄰的電池連接。
第二導電基板202與第一導電基板201相對設置。一催化層204設置於第二導電基板202上,催化層204例如鉑(Pt)或碳(C),可促進電解質208的氧化還原。
請參照圖5所示,染料敏化太陽能電池2更可包含一第二導電層206,其設置於第二導電基板202上。一第二導電通孔212藉由第二導電層206與第二導電基板202電性連接。第二導電層206之一部分(集電部C2)係直接與第二導電通孔212相連,其另一部分係分別於催化層204周圍形成框部。第一導電層205或第二導電層206之線寬係以介於0.1mm至30mm為例,較佳者係介於0.3mm至15mm,其中第一導電層205及第二導電層206的線寬可以相同或不相同。
第二導電層206能夠協助電子的傳遞,並與第一導電層205一同形成電性迴路。其中,在第二導電層206最外圍的一側,通常有一集電部C2(於此以長條狀為例,且實質上與第一導電層205之集電部C1平行),用以匯集染料敏化太陽能電池2的電流,並作為染料敏化太陽能電池2的正極或負極,以與相鄰的染料敏化太陽能電池或外部的控制電路電性串連或並聯。於此,第二導電層206係以銀膠為例,其可為其他材質的導電膠,例如鋁膠或銅膠。需補充的是,在第二導電層206構成框部的部分,還可以設置一絕緣保護層於其上,其材質可例如為玻璃膠,例如為含鉍氧化物,用以減少第二導電層206之框部部分的氧化,並避免和第一導電基板201上的第一導電層205電性短路。
另外,染料敏化太陽能電池2更可包含一第二導線210,第二導線210經由第二導電通孔212與第二導電基板202電性連結。第二導線210可為一印刷導線或一實體導線,於此係以實體的導線為例,且於第二導電通孔212內填設導電焊料,並分別焊接使得第二導電通孔212能與第二導線210電性連結。此外,第二導電通孔212藉由第二導電層206與第二導電基板202電性連接。第二導電層206之一部分(集電部C2)係直接與第二導電通孔212相連結。
另外,染料敏化太陽能電池2可更包含一框膠207,其係連結第一導電基板201與第二導電基板202。第一導電基板201、第二導電基板202以及框膠207係形成一密閉空間。其中,框膠207可包含具有防水性、耐熱性之樹脂材料以延長產品的使用壽命。
另外,為增加第一導電基板201與第二導電基板202之連結強度,第一導電基板201與第二導電基板202之間更設有一連結膠213。於此,係以連結膠213設置於第一導電層205與第二導電層206之間,以連結第一導電基板201與第二導電基板202,連結膠213係為絕緣膠。另外,框膠207與連結膠213的材質可為相同,例如均為熱熔膠或是UV膠或環氧樹脂。
另外,染料敏化太陽能電池2可更包含一電解質208,其係充填於密閉空間內。電解質208可構成本實施例之光電轉換材料之一部分。經照光後,染料層203中的染料分子形成激發態,並迅速向第一導電基板201或第一導電層205注入電子,同時自身轉化為染料氧化態,處於氧化態的染料分子則由電解質208溶液取得電子而回到基態,而使得染料分子再生。另外,電解質溶液中的電解質208提供電子以後,則擴散到第二導電基板202或第二導電層206,重新得到電子而還原。從而,完成一個光電化學反應循環。
另外,透明導電薄膜12~12d亦可應用於其他光伏電池,例如矽基光伏電池、半導體化合物光伏電池、有機光伏電池等。隨著光伏電池的種類不同,其所包含的光電轉換材料亦不同,例如為矽基材料、半導體化合物或有機材料。
另外,圖6為透明導電薄膜12~12d應用於一顯示面板的示意圖,於此係以液晶顯示面板為例。如圖6所示,一液晶顯示面板3包含一薄膜電晶體基板(TFT substrate)31、一彩色濾光基板(CF substrate)32以及一液晶層33,液晶層33設置於兩基板31、32之間。薄膜電晶體基板31包含一基板311以及一薄膜電晶體陣列312,薄膜電晶體陣列312設置於基板311上並具有多個畫素電極(圖未顯示)對應各畫素。彩色濾光基板32包含一基板321以及一共同電極322。藉由各畫素電極與共同電極322之電壓差可驅動各畫素之液晶偏轉,進而形成畫面。其中,共同電極322及/或畫素電極可應用本發明之透明導電薄膜12~12d,以得到降低電阻值與高可見光穿透率之功效。
綜上所述,藉由不斷的努力與研究,將透明導電薄膜的材料改成錫化三銀或錫化四銀,即可大幅增加透明導電薄膜的導電率並使電阻值下降。本發明之透明導電薄膜包含銀-錫化三銀-氧化錫之至少一疊層、或銀-錫化四銀-氧化錫之至少一疊層,使得電阻值可例如降低至1Ω/平方,進而大幅提升訊號傳遞與反應速度。此外,含有錫化三銀或錫化四銀之透光導電薄膜亦可達到濾除紅外光(IR-Cut)及/或濾除紫外光(UV-Cut)之功效。藉由濾除紅外光或紫外光,使得應用本發明之半導體光電裝置(例如光伏電池、觸控面板或顯示面板)能夠避免紅外光或紫外光照射所造成的黃化。
以上所述僅為舉例性,而非為限制性者。任何未脫離本發明之精神與範疇,而對其進行之等效修改或變更,均應包含於後附之申請專利範圍中。
11、311、321...基板
12、12a~12d...透明導電薄膜
121...結構層
122...銀
123...錫化三銀
124...氧化錫
2...光伏電池
201...第一導電基板
202...第二導電基板
203...染料層
204...催化層
205...第一導電層
206...第二導電層
207...框膠
208...電解質
209...第一導線
210...第二導線
211...第一導電通孔
212...第二導電通孔
213...連結膠
3...液晶顯示面板
31...薄膜電晶體基板
32...彩色濾光基板
33...液晶層
312...薄膜電晶體陣列
322...共同電極
A...銀
B...錫
C1、C2...集電部
D...間距
P...染料部
S...絕緣保護層
圖1A至圖1E為本發明較佳實施例之一種透明導電薄膜的示意圖;
圖2為本發明較佳實施例之一種透明導電薄膜設置於一基板的示意圖;
圖3A及圖3B為形成介金屬的示意圖;
圖4及圖5為本發明較佳實施例之一種透明導電薄膜應用於光伏電池的示意圖;以及
圖6為本發明較佳實施例之一種透明導電薄膜應用於一顯示面板的示意圖。
12...透明導電薄膜
122...銀
123...錫化三銀
124...氧化錫

Claims (10)

  1. 一種透明導電薄膜,其包含銀-錫化三銀-氧化錫之至少一疊層、或銀-錫化四銀-氧化錫之至少一疊層。
  2. 如申請專利範圍第1項所述之透明導電薄膜,其中該銀層之厚度係介於2nm至15nm之間。
  3. 如申請專利範圍第1項所述之透明導電薄膜,其中該錫化三銀層或該錫化四銀層之厚度係介於1nm至3nm之間。
  4. 如申請專利範圍第1項所述之透明導電薄膜,其係濾除紅外光或紫外光。
  5. 如申請專利範圍第1項所述之透明導電薄膜,其係應用於一觸控面板、一顯示面板、或一發光裝置、或一光伏電池。
  6. 如申請專利範圍第1項所述之透明導電薄膜,更包含:一結構層,鄰設於該銀層或該氧化錫層。
  7. 如申請專利範圍第6項所述之透明導電薄膜,其中該結構層為單一層或一疊層。
  8. 如申請專利範圍第6項所述之透明導電薄膜,其中該結構層包含金屬、金屬氧化物、光學材料、陶瓷、或其組合。
  9. 如申請專利範圍第6項所述之透明導電薄膜,其中至少一疊層係與該結構層相互疊設。
  10. 如申請專利範圍第6項所述之透明導電薄膜,其中當該結構層為複數時,至少一疊層係設置於該等結構層之間。
TW101100359A 2012-01-04 2012-01-04 透明導電薄膜 TW201330015A (zh)

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US13/729,846 US8642166B2 (en) 2012-01-04 2012-12-28 Transparent conductive thin film

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Cited By (1)

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TWI566157B (zh) * 2015-04-28 2017-01-11 業成光電(深圳)有限公司 觸控面板

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CN112635585A (zh) * 2020-12-25 2021-04-09 中建材蚌埠玻璃工业设计研究院有限公司 一种彩色cigs薄膜太阳能电池及其制备方法

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US4565719A (en) * 1982-10-08 1986-01-21 Optical Coating Laboratory, Inc. Energy control window film systems and methods for manufacturing the same
DE4239355A1 (de) * 1992-11-24 1994-05-26 Leybold Ag Transparentes Substrat mit einem transparenten Schichtsystem und Verfahren zur Herstellung eines solchen Schichtsystems
DE4407502A1 (de) * 1994-03-07 1995-09-14 Leybold Ag Mehrlagige Beschichtung
US20030228476A1 (en) * 2001-10-22 2003-12-11 Harry Buhay Methods of changing the visible light transmittance of coated articles and coated articles made thereby
US7241506B2 (en) * 2003-06-10 2007-07-10 Cardinal Cg Company Corrosion-resistant low-emissivity coatings

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