TW201326378A - Chemical mechanical polishing slurry for metal and application thereof - Google Patents

Abstract

Disclosed are a chemical mechanical polishing slurry for copper and application thereof. The slurry comprises an abrasive particle, a complexing agent, an oxidant, a corrosion inhibitor and at least one of phosphate type surfactant. The use of the chemical mechanical polishing slurry can keep a high copper removal rate, and improve dishing dent and over polishing window of polished copper line. The slurry can improve the following detects such as few contaminants on the surface of the polished copper and no corrosion on it.

Description

Metal chemical mechanical polishing slurry and its application

The present invention relates to a chemical mechanical polishing slurry and its use, and more particularly to a chemical mechanical polishing slurry for copper and its use.

With the development of semiconductor technology and the miniaturization of electronic components, an integrated circuit contains millions of transistors. In the course of operation, in the integration of such a large number of rapidly switching transistors, the traditional aluminum or aluminum alloy interconnects, the signal transmission speed is reduced, and the current transfer process requires a lot of energy, in a certain sense. It also hindered the development of semiconductor technology. In order to further develop, people began to look for the use of materials with higher electrical properties instead of aluminum. It is well known that copper has a low electrical resistance and good electrical conductivity, which speeds up the transmission of signals between transistors in a circuit, and also provides a smaller parasitic capacitance capability and a smaller circuit sensitivity to electromigration. These electrical advantages make copper have a good development prospect in the development of semiconductor technology.

However, in the copper integrated circuit manufacturing process, it is found that copper migrates or diffuses into the transistor region of the integrated circuit, thereby adversely affecting the performance of the semiconductor transistor, and thus the copper interconnection can only be inlaid. Manufactured by forming a trench in the first layer, filling the trench with a copper barrier layer and copper, forming a metal trace and overlying the dielectric layer. The excess copper/copper barrier on the dielectric layer is then removed by chemical mechanical polishing leaving a single interconnect in the trench. The chemical mechanical polishing process of copper is generally divided into three steps. The first step is to remove a large amount of copper on the surface of the substrate and leave a certain thickness of copper with a high and low removal rate. Step lower The removal rate removes the remaining metallic copper and stops at the barrier layer. In step 3, the barrier layer and a portion of the dielectric layer and metallic copper are removed by a barrier polishing solution to achieve planarization.

On the one hand, copper polishing should remove excess copper on the barrier layer as soon as possible, and on the other hand, minimize the dishing of the polished copper wire. Prior to copper polishing, the metal layer is partially recessed above the copper wire. During polishing, the copper on the dielectric material is easily removed (higher) at the bulk pressure, while the copper at the depression is subjected to a lower polishing pressure than the bulk pressure, and the copper removal rate is small. As the polishing progresses, the height difference of the copper is gradually reduced to achieve flattening. However, in the polishing process, if the chemical action of the copper polishing solution is too strong and the static etching rate is too high, the passivation film of copper is easily removed even under a lower pressure (such as a copper line depression), resulting in lowering of planarization efficiency. The polished dishing is enlarged.

With the development of integrated circuits, on the one hand, in the traditional IC industry, in order to improve integration, reduce energy consumption, shorten the delay time, the line width is narrower and narrower, and the dielectric layer uses a low dielectric with low mechanical strength. (low-k) materials, the number of layers of wiring is also more and more, in order to ensure the performance and stability of the integrated circuit, the requirements for copper chemical mechanical polishing are also higher and higher. It is required to reduce the polishing pressure while ensuring the removal rate of copper, improve the flattening of the surface of the copper wire, and control surface defects. On the other hand, due to physical limitations, the linewidth cannot be reduced indefinitely, and the semiconductor industry is no longer simply relying on integrating more devices on a single die to improve performance, turning to multi-chip packages. Through-via (TSV) technology is widely recognized in the industry as the latest technology for interconnecting between wafers and wafers, and between wafers and wafers to achieve interconnection between wafers. TSV enables wafers to be stacked in the three-dimensional direction with the highest density and smallest form factor, greatly improving wafer speed and low power consumption. The current TSV process combines a conventional IC process to form a copper via that penetrates the substrate, that is, the copper is filled in the TSV opening to achieve conduction, and the excess copper after filling needs to be removed by chemical mechanical polishing to achieve planarization. Different from the traditional IC industry, since the through hole is deep, the table is filled. The excess copper is usually several to several tens of microns thick. In order to quickly remove these extra copper. It is usually required to have a high copper removal rate while the surface roughness after polishing is good. In order to make copper better in semiconductor technology, people are constantly trying to improve the new polishing solution.

Chinese patent CN1256765C provides a polishing liquid containing a chelating organic acid buffer system composed of citric acid and potassium citrate. CN1195896C employs a polishing liquid containing an oxidizing agent, a carboxylate such as ammonium citrate, an abrasive slurry, an optional triazole or triazole derivative. CN1459480A provides a copper chemical mechanical polishing liquid comprising a film former and a film forming aid: the film forming agent is composed of a buffer solution composed of a mixture of a strong base and acetic acid, and the film forming aid is a potassium nitrate (sodium) salt. U.S. Patent No. 5,552,742 provides a metal chemical mechanical polishing slurry comprising a surfactant comprising aramid oxime, alkane polyoxyalkylene, polyoxyalkylene ether and copolymers thereof. US Pat. No. 6,821,897 B2 provides a copper chemical mechanical polishing method using a polishing agent containing a polymer complexing agent, which employs a negatively charged polymer including sulfuric acid and salts thereof, sulfates, phosphoric acid, phosphates, phosphates and the like. The US5527423 metal chemical mechanical polishing slurry comprises a surfactant: aramid oxime, polyoxyalkylene, polyoxyalkylene ether and copolymers thereof.

The techniques in the above patents strive to reduce pitting and corrosion of the copper layer and control the static etching rate during the polishing process of copper, thereby better removing the copper layer, increasing the polishing rate of copper, and obtaining good copper. Interconnectivity. The above patent overcomes the problems encountered by the above copper in the polishing process to a certain extent, but the effect is not obvious. After use, there are defects on the copper surface, the flatness is low, and the copper wire has a large dishing after polishing. The window is too narrow; or the polishing rate is not high enough to be applied to processes that require a higher removal rate.

The invention provides a metal chemical mechanical polishing slurry, wherein a phosphate-based surfactant is added to the polishing slurry to reduce static corrosion of copper while maintaining a high polishing rate of copper. Improve the flatness of the polished surface of copper and enhance the polishing effect.

The metal chemical mechanical polishing slurry of the invention achieves its purpose by the following technical solutions:

A metal chemical mechanical polishing slurry comprising abrasive particles, a complexing agent, a corrosion inhibitor, an oxidizing agent, wherein at least one phosphate surfactant is further contained; and the phosphate surfactant comprises at least one of the following structures: And/or Wherein X=RO, RO-(CH ₂ CH ₂ O) _n , RCOO-(CH ₂ CH ₂ O) _n ; R is a C8-C22 alkyl or alkylbenzene, glyceryl group (C ₃ H ₅ O ₃ - ); n=2~30, M=H, K, NH ₄ , (CH ₂ CH ₂ O) _1~3 NH _3~1 and/or Na.

Wherein when R is a C ₈ -C ₂₂ alkyl group, the surfactant is a polyoxyethylene ether phosphate or a salt thereof, such as dodecyl polyoxyethylene ether phosphate or dodecyl polyoxyethylene ether phosphate. Potassium salt, octadecyl polyoxyethylene ether phosphate, octadecyl polyoxyethylene ether phosphate potassium salt and the like. When R is an alkylbenzene, the surfactant is an alkylphenol polyoxyethylene alkyl ether phosphate or a salt thereof, including: nonylphenol polyoxyethylene ether phosphate, octadecylphenol polyoxyethylene alkyl Ethyl phosphate sodium salt and the like. Experiments have shown that the chemical polishing slurry composed of the above surfactants and abrasive particles, complexing agent, corrosion inhibitor, oxidant and the like can effectively control the static corrosion rate of copper, alleviate the local corrosion of copper, and maintain a high copper. At the same time as the removal rate, the dishing and over-polishing of the polished copper wire is improved to obtain a smoother polished surface of the copper.

The above metal chemical mechanical polishing slurry, wherein the phosphate surfactant is The content is 0.0005 to 1% by weight, preferably 0.001 to 0.5% by weight.

The above metal chemical mechanical polishing slurry, wherein the abrasive particles are one or more of cerium oxide, aluminum oxide, aluminum-doped or aluminum-coated cerium oxide, cerium oxide, titanium oxide, and polymer abrasive particles. .

The metal chemical mechanical polishing slurry described above, wherein the abrasive particles have a particle diameter of 20 to 200 nm.

The metal chemical mechanical polishing slurry described above, wherein the abrasive particles are contained in an amount of 0.1 to 20% by weight, preferably 0.1 to 10% by weight.

The metal chemical mechanical polishing slurry described above, wherein the complexing agent is one or more of an aminocarboxylate compound and a salt thereof, an organic carboxylic acid and a salt thereof, an organic phosphonic acid and a salt thereof, and an organic amine.

The above metal chemical mechanical polishing slurry, wherein the aminocarboxy compound is selected from the group consisting of glycine, alanine, valine, leucine, valine, phenylalanine, tyrosine, tryptophan, Lysine, arginine, histidine, serine, aspartic acid, threonine, glutamic acid, aspartame, glutamine, ammonia triacetic acid, ethylenediaminetetraacetic acid, cyclohexane One or more of tetraacetic acid, ethylenediamine disuccinic acid, diethylenetriaminepentaacetic acid and triethylenetetramine hexaacetic acid; the organic carboxylic acid is acetic acid, oxalic acid, citric acid, tartaric acid, malonic acid, butyl One or more of diacid, malic acid, lactic acid, gallic acid and sulfosalicylic acid; the organic phosphonic acid is 2-phosphonic acid butane-1,2,4-tricarboxylic acid, aminotrimethyl Fork phosphonic acid, hydroxyethylidene diphosphonic acid, ethylenediaminetetramethylene phosphonic acid, diethylenetriamine pentamethylphosphonic acid, 2-hydroxyphosphonic acid, ethylenediaminetetramethylenephosphonic acid and polyamino One or more of ether methyl bisphosphonates; the organic amines are ethylene diamine, diethylene triamine, pentamethyldiethylene triamine, polyethene polyamine, triethylene Amine, tetraethylene pentamine; the salt is potassium, sodium and / or ammonium salts.

The metal chemical mechanical polishing slurry described above, wherein the complexing agent is contained in an amount of 0.05 to 10% by weight. It is preferably 0.1 to 5% by weight.

The above metal chemical mechanical polishing slurry, wherein the oxidizing agent is hydrogen peroxide, urea peroxide, peroxyformic acid, peracetic acid, persulfate, percarbonate, periodic acid, perchloric acid, perboric acid One or more of potassium permanganate and ferric nitrate.

The metal chemical mechanical polishing slurry described above, wherein the oxidizing agent is contained in an amount of 0.05 to 10% by weight.

The metal chemical mechanical polishing slurry described above, wherein the corrosion inhibitor is one or more of a azole, an imidazole, a thiazole, a pyridine, and a pyrimidine compound.

The above metal chemical mechanical polishing slurry, wherein the azole compound comprises: benzotriazole, 5-methyl-1,2,3-benzotriazole, 5-carboxybenzotriazole, 1 -hydroxy-benzotriazole, 1,2,4-triazole, 3-amino-1,2,4-triazole, 4-amino-1,2,4-triazole, 3,5 -diamino-1,2,4-triazole, 5-carboxy-3-amino-1,2,4-triazole, 3-amino-5-mercapto-1,2,4-triazole, 5-acetic acid-1H-tetrazole, 5-methyltetrazolium, 5-amino-1H-tetrazole and 1-phenyl-5-mercapto-tetrazolium. The imidazole compounds include benzimidazole and 2-mercaptobenzimidazole. The thiazole compound includes 2-mercapto-benzothiazole, 2-mercaptothiadiazole and 5-amino-2-mercapto-1,3,4-thiadiazole; the pyridine includes 2,3-di Aminopyridine, 2-aminopyridine and 2-picolinic acid. The pyrimidine is a 2-aminopyrimidine.

The metal chemical mechanical polishing slurry described above, wherein the corrosion inhibitor is contained in an amount of 0.001 to 2% by weight, preferably 0.005 to 1% by weight.

The metal chemical mechanical polishing slurry described above, wherein the pH is from 3 to 11, preferably from 3 to 9.

The metal chemical mechanical polishing slurry described above further includes a conventional additive in the art such as a pH adjuster, a viscosity modifier, an antifoaming agent, and a bactericide.

The above metal chemical mechanical polishing slurry can prepare a concentrated sample, which can be diluted with deionized water to the concentration range of the present invention before use.

Use of the polishing slurry of the present invention in chemical mechanical polishing of a substrate containing copper. The advantages of using the metal chemical mechanical polishing slurry of the present invention are as follows:

1. The metal chemical mechanical polishing slurry of the invention has a high copper removal rate, and can effectively control the static corrosion of copper, and the polished copper surface has no corrosion.

2. The metal chemical mechanical polishing slurry of the present invention enhances the polishing effect of copper, and improves the dishing and over-polishing of the copper wire after polishing.

The invention is further illustrated by the following detailed description.

Examples 1 to 47

Table 1 shows Examples 1 to 47 of the chemical mechanical polishing liquid of the present invention. According to the formulation given in the table, all the components were uniformly mixed, and the mass percentage was made up to 100% with water. Adjust to the desired pH with KOH or HNO ₃ .

Effect embodiment

Table 2 shows Examples 48 to 67 and Comparative Examples 1 to 5 of the chemical mechanical polishing liquid of the present invention. According to the formulation given in the table, all the components were uniformly mixed, and the mass percentage was made up to 100% with water. Adjust to the desired pH with KOH or HNO ₃ .

The copper (Cu) wafer and the patterned copper wafer were polished using the comparative polishing liquids 1-3 and the polishing liquids 48 to 63 of the present invention. The polishing rate of the obtained copper is shown in Table 3. The polishing conditions of the pattern wafer and the dishing value of the copper block are shown in Table 4.

Empty copper wafer polishing conditions: downforce 1~3 psi; polishing disc and polishing head rotation speed 93/87 rpm, polishing pad IC1010, polishing pad correction wheel 3M A165, polishing liquid flow rate 150ml/min, polishing machine 8" Mirra.

Patterned copper wafer polishing process conditions: polishing disk and polishing head rotation speed 93/87 rpm, polishing pad IC1010, polishing pad correction wheel is 3M A165, polishing liquid flow rate 150ml/min, polishing machine table is 8" Mirra. In polishing disk 1 The patterned copper wafer was polished to a residual copper of about 3000 angstroms with a corresponding downforce, and then the residual copper was removed and polished for 20 seconds on the polishing disk 2 with a corresponding downforce. Measurements were made with an XE-300P atomic force microscope. The dishing value of the 80um ^* 80um copper block on the patterned copper wafer.

The polished pattern wafer was immersed in the polishing solution for 30 minutes and observed with a scanning electron microscope. The surface condition of the copper wire before and after immersion is shown in Figures 1 and 2.

It can be known from Table 3 that the metal chemical mechanical polishing slurry of the present invention can effectively reduce the removal rate of copper under low pressure compared with the comparative polishing liquid, and the lower the lower pressure. Except for the rate effect is not big. This property allows the polishing liquid to obtain a smoother polishing surface while maintaining a higher removal rate, which greatly improves the production efficiency, and reduces the dishing value of the polished copper block, resulting in a flatter Polish the surface. A lower dishing value can also be obtained under conditions close to the removal rate of the comparative polishing liquid 2. (See Table 4)

The SEM image of the pattern wafer which was immersed in the polishing liquid for 30 minutes after polishing in Example 55 and after polishing is shown in Figs. 1 to 2, and it can be seen from the figure that the surface of the wafer polished by the polishing liquid is non-corrosive and free from defects. After immersing in the polishing solution for 30 minutes, the copper wire still has no obvious corrosion and defects, indicating that the polishing liquid of the present invention has a strong ability to control corrosion.

The empty copper (Cu) wafer, the empty erbium dioxide wafer, and the patterned copper wafer are polished using the comparative polishing liquid 5 and the polishing liquid 64 to 67 of the present invention. The polishing rate obtained and the dishing value of the copper block are shown in Table 5.

Empty sheet polishing conditions: lower pressure 1~3 psi; polishing disc and polishing head rotation speed 93/87 rpm, polishing pad IC1010, polishing pad correction wheel 3M A165, polishing liquid flow rate 150ml/min, polishing machine 8" Mirra.

Patterned copper wafer polishing process conditions: polishing disk and polishing head rotation speed 93/87 rpm, polishing pad IC1010, polishing pad correction wheel is 3M A165, polishing liquid flow rate 150ml/min, polishing machine table is 8" Mirra. In polishing disk 1 The patterned copper wafer was polished with a 3 psi downforce to a residual copper of about 5000 A, and then the residual copper was removed on a polishing disk 2 with a 2 psi downforce. 10 um on a patterned copper wafer was measured with an XE-300P atomic force microscope. The dishing value at the copper wire of /10um (copper wire / cerium oxide).

Table 5 The removal rate of the blank of the polishing liquid and the polishing conditions of the patterned copper wafer and the dishing value after polishing

As can be seen from Table 5, the metal chemical mechanical polishing slurry 64 to 66 of the present invention can obtain a more flat polished surface while maintaining a high removal rate as compared with the comparative polishing liquid 5. It can be seen that the polishing liquid can also provide a higher removal rate of cerium oxide while maintaining a high copper removal rate. The polishing solution can meet different application needs.

1 is a scanning electron micrograph of a surface of a copper wafer polished by the polishing slurry of the present invention; and FIG. 2 is a scanning electron micrograph of a surface of a copper wafer polished and immersed by the polishing slurry of the present invention.

Claims (19)

A metal chemical mechanical polishing slurry comprising abrasive particles, a complexing agent, a corrosion inhibitor, an oxidizing agent, characterized in that it further comprises at least one phosphate surfactant. The metal chemical mechanical polishing slurry according to claim 1, wherein the phosphate surfactant has at least one structural formula: And/or Where: X = RO, RO-(CH ₂ CH ₂ O) _n , RCOO-(CH ₂ CH ₂ O) _n ; R is a C8-C22 alkyl or alkylbenzene, glyceryl (C ₃ H ₅ O ₃ -), n = 2~30, M = H, K, NH ₄ , (CH ₂ CH ₂ O) _1~3 NH _3~1 and/or Na. The metal chemical mechanical polishing slurry according to claim 1, wherein the phosphate surfactant is contained in an amount of 0.0005 to 1% by weight. The metal chemical mechanical polishing slurry according to claim 3, wherein the phosphate surfactant is contained in an amount of 0.001 to 0.5% by weight. The metal chemical mechanical polishing slurry according to claim 1, wherein the abrasive particles are ceria, alumina, doped aluminum or aluminum-coated ceria, ceria, titania and polymer. One or more of the abrasive particles. The metal chemical mechanical polishing slurry according to claim 1, wherein the abrasive particles have a particle diameter of 20 to 200 nm. The metal chemical mechanical polishing slurry according to claim 1, wherein the abrasive particles are contained in an amount of 0.1 to 20% by weight. The metal chemical mechanical polishing slurry according to claim 7, wherein the abrasive particles are contained in an amount of 0.1 to 10% by weight. The metal chemical mechanical polishing slurry according to claim 1, wherein the complexing agent is one of an aminocarboxylic acid compound and a salt thereof, an organic carboxylic acid and a salt thereof, an organic phosphonic acid and a salt thereof, and an organic amine. Or a variety. The metal chemical polishing slurry according to claim 9, wherein the aminocarboxy compound is selected from the group consisting of glycine, alanine, valine, leucine, valine, phenylalanine, and tyrosine. , tryptophan, lysine, arginine, histidine, serine, aspartic acid, threonine, glutamic acid, aspartame, glutamine, aminotriacetic acid, ethylenediamine One or more of acetic acid, cyclohexanetetraacetic acid, ethylenediamine disuccinic acid, diethylenetriaminepentaacetic acid, and triethylenetetraamine hexaacetic acid; the organic carboxylic acid is acetic acid, oxalic acid, citric acid, tartaric acid, One or more of malonic acid, succinic acid, malic acid, lactic acid, gallic acid, and sulfosalicylic acid; the organic phosphonic acid is 2-phosphonic acid butane-1, 2, 4-tri Carboxylic acid, aminotrimethylene phosphonic acid, hydroxyethylidene diphosphonic acid, ethylenediaminetetramethylene phosphonic acid, diethylenetriamine pentamethylphosphonic acid, 2-hydroxyphosphonic acid acetic acid, ethylenediamine tetramethylenephosphine One or more of an acid and a polyaminopolyether methylidene phosphonate; the organic amine is ethylenediamine, diethylenetriamine, pentamethyldiethylenetriamine, polyethene An amine, a triethylenetetramine, a tetraethylene pentamine; the salt is a potassium salt, a sodium salt and/or an ammonium salt. The metal chemical mechanical polishing slurry according to claim 1, wherein the complexing agent is contained in an amount of 0.05 to 10% by weight. The metal chemical mechanical polishing slurry according to claim 11, wherein the complexing agent is preferably present in an amount of from 0.1 to 5% by weight. The metal chemical mechanical polishing slurry according to claim 1, wherein the oxidizing agent is hydrogen peroxide, urea peroxide, peroxyformic acid, peracetic acid, persulfate, percarbonate or periodic acid. One or more of perchloric acid, perboric acid, potassium permanganate and ferric nitrate. The metal chemical mechanical polishing slurry according to claim 1, wherein the oxidizing agent is contained in an amount of 0.05 to 10% by weight. The metal chemical mechanical polishing slurry according to claim 1, wherein the corrosion inhibitor is one or more of a azole, an imidazole, a thiazole, a pyridine, and a pyrimidine compound. The metal chemical mechanical polishing slurry according to claim 15, wherein the azole compound is selected from the group consisting of benzotriazole and 5-methyl-1,2,3-benzotriazole, 5-carboxybenzotriazole, 1-hydroxy-benzotriazole, 1,2,4-triazole, 3-amino-1,2,4-triazole, 4-amino-1,2 , 4-triazole, 3,5-diamino-1,2,4-triazole, 5-carboxy-3-amino-1,2,4-triazole, 3-amino-5-fluorenyl- 1,2,4-triazole, 5-acetic acid-1H-tetrazole, 5-methyltetrazolium, 5-amino-1H-tetrazole and 1-phenyl-5-mercapto-tetrazole . The imidazole compounds include benzimidazole and 2-mercaptobenzimidazole. The thiazole compound includes 2-mercapto-benzothiazole, 2-mercaptothiadiazole and 5-amino-2-mercapto-1,3,4-thiadiazole; the pyridine is selected from one of the following Or more than: 2,3-diaminopyridine, 2-aminopyridine and 2-picolinic acid. The pyrimidine is a 2-aminopyrimidine. The metal chemical mechanical polishing slurry according to claim 1, wherein the corrosion inhibitor is contained in an amount of 0.001 to 2% by weight. The metal chemical mechanical polishing slurry according to claim 17, wherein the corrosion inhibitor is contained in an amount of 0.005 to 1% by weight. Use of the polishing slurry according to any one of claims 1 to 18 for chemical mechanical polishing of a substrate containing copper.