TW201324642A - Foreign body inspecting device and semiconductor manufacturing device - Google Patents

Abstract

According to one embodiment, a foreign body inspecting device includes an inspection head having a base inspection part and a supporting part for supporting the base inspection part; and a control part having a base data storage part, an inspection control part and a foreign body existence determining part. The base data storage part stores base data representing base arrangement area of arrangement positions of a layout substrate or a chip located on the upper most layer of the layout substrate. The inspection control part is to control the inspection head to contact with a inspection target at a specific position by pressing with a specific force. Based on the inspection data obtained from the base inspection part and referring to the base data, the foreign body existence determining part determines an area in the base arrangement area with pressure higher than other areas as a foreign body existence area .

Description

Foreign object inspection device and semiconductor manufacturing device

Embodiments of the present invention relate to a foreign matter inspection device and a semiconductor manufacturing device.

In recent years, non-volatile semiconductor memory devices such as NAND flash memories have been widely used as memory devices for electronic devices such as mobile phones and personal computers. As a result, the size and weight of electronic devices are increasing. Further, in response to an increase in the amount of information processed by the electronic devices, the increase in capacity of the nonvolatile semiconductor memory device is also progressing. As a nonvolatile semiconductor memory device used in such an electronic device, a memory card (semiconductor memory card) can be cited.

For example, in order to realize a miniaturized memory card, a semiconductor wafer such as a memory chip or a controller wafer is laminated on a wiring board. However, in order to increase the capacity of the memory card, the memory chip itself is also laminated in multiple layers. On the wiring substrate.

At this time, since the thickness (outer size) of the memory card is fixed, it is necessary to reduce the thickness of each memory chip in order to increase the capacity, for example, a wafer having a thickness of 50 μm or less is used.

When a memory chip is stacked on the surface of the memory substrate or the memory chip as a base, when the memory chip placed on the upper surface is brought into contact with and pressed against the substrate, the foreign matter is used as a starting point for memory. The flaw of the body wafer is broken.

Previously, it was not working properly to check the function blocks in the memory chip. The defect region is revealed based on the case where the memory wafer is laminated, but the method of laminating the wafer in the case where foreign matter is present on the substrate is not disclosed.

According to one embodiment, there is provided a foreign matter inspection device that checks for the presence or absence of foreign matter on the upper surface of an inspection object including a wiring substrate or a wiring substrate on which a wafer is laminated. The foreign object inspection device includes: a detection head that detects presence or absence of foreign matter present on an upper surface of the inspection object; and a control device that moves the detection head on the inspection object to perform foreign matter detection processing, according to the above The inspection material obtained by the detecting head indicating the state of the upper surface of the inspection object extracts a foreign matter existence region.

According to one embodiment, it is possible to provide a foreign matter inspection apparatus and a semiconductor manufacturing apparatus which prevent a wafer which is laminated due to foreign matter existing on a surface of a wiring board or a wafer as a base.

Hereinafter, the foreign matter inspection device and the semiconductor manufacturing device according to the embodiment will be described in detail with reference to the accompanying drawings. Furthermore, the embodiments do not limit the invention.

(First embodiment)

Fig. 1 is a view schematically showing the configuration of a semiconductor manufacturing system including the foreign matter inspection device according to the first embodiment. The semiconductor manufacturing system 1 includes a loader 10 that stores a wiring substrate before processing (a wiring substrate including a wafer in which a memory wafer or a controller wafer is laminated) 80; and a foreign matter inspection device 20 that checks whether or not the wiring substrate 80 exists. Foreign matter 85; foreign matter removing device 30. When the foreign matter 85 is present on the wiring substrate 80, the foreign matter 85 is removed. When the foreign matter 85 is not present on the wiring substrate 80, the wafer 90 such as a memory chip or a controller wafer is laminated on the wafer 90. On the wiring board 80; the unloader 50 stores the wiring board 80 on which the wafer 90 is laminated; the transport apparatus 60 transports the wiring board 80 between the loader 10 and the unloader 50 to each processing apparatus; and the system control apparatus 70 It controls the various processing devices.

The foreign matter inspection device 20 is a device for inspecting whether or not the foreign matter 85 is present on the upper surface of the transferred wiring substrate 80 or the upper surface of the wafer 90 laminated on the wiring substrate 80. The configuration of the foreign matter inspection device 20 will be described below.

The foreign matter removing device 30 is a device that removes foreign matter 85 existing on the upper surface of the wiring substrate 80 or laminated on the upper surface of the wafer 90 on the wiring substrate 80. For example, the foreign matter removing device 30 can be configured such that the adhesive tape 31 is brought into contact with the upper surface of the wiring substrate 80 or the upper surface of the wafer 90 laminated on the wiring substrate 80, and then peeled off, whereby the foreign matter 85 is removed. Device. Here, the manner in which the adhesive tape 31 is wound by the roller is used.

The wafer stacking apparatus 40 includes a wafer mounting table 41 on which the stacked wafers 90 are disposed, and a wafer placement head 42 that is movable between the wafer mounting table 41 and a stage (not shown) that supports the wiring substrate 80. The wafer arranging head 42 is configured to be movable in the horizontal plane and in the vertical direction, and has a structure in which a wafer holding mechanism such as a vacuum chuck mechanism or an electrostatic chuck mechanism is provided on the lower surface, and the upper surface of the wafer 90 can be held. That is, the wafer mounting table 41 holds the upper surface of the wafer 90 on which the adhesive layer is formed on the lower surface, moves onto the wiring substrate 80, and positions the wiring substrate 80 and the wafer 90. 90 is pressed against the wiring substrate 80 to be adhered. After the adhesion process is completed, the wafer holding mechanism is released, and the process of attaching the other wafers 90 is performed. Further, the lamination processing from the wafer 90 to a specific position on the wiring substrate 80 of the wafer 90 is controlled by, for example, the system control device 70.

The transport device 60 transports the wiring substrate 80 between the respective processing devices from the loader 10 to the unloader 50. As the conveying device 60, for example, a belt conveyor or a robot arm type wiring board conveying device can be cited. Here, the conveying device 60 is a case where it is configured by a belt conveyor. Further, in the foreign matter inspection device 20, the foreign matter removing device 30, and the wafer layering device 40, the tape conveyor also has a function as a stage for holding the wiring substrate 80.

The system control device 70 performs control to transfer the wiring substrate 80 from the loader 10 to the unloader 50 by the transfer device 60, and instruct the respective devices to process the wiring substrate 80. For example, the wiring board 80 carried out from the loader 10 is stopped in the inspection area of the foreign matter inspection apparatus 20, and the foreign object inspection apparatus 20 is instructed to perform inspection. When the foreign matter 85 does not exist on the wiring substrate 80, the wiring substrate 80 is stopped in the processing region of the wafer lamination device 40, and the wafer lamination device 40 is instructed to laminate the wafer 90 on the wiring substrate 80. When the foreign matter 85 is present on the wiring board 80, the wiring board 80 is stopped in the removal area of the foreign matter removing device 30, the foreign matter removing device 30 is instructed to remove the foreign matter 85, and the new wiring is not instructed to be carried out from the loader 10. Substrate 80. After the foreign matter 85 is removed, an instruction is given to the transport device 60 to transport the wiring substrate 80 to the foreign matter inspection device 20, and the foreign matter inspection device 20 is instructed to inspect again. Further, when the foreign matter 85 is detected at the same position, it is judged whether or not the foreign matter 85 on the wiring substrate 80 cannot be removed by the foreign matter removing device 30, or The foreign matter 85 is attached to either side of the foreign matter inspection device 20, and outputs a warning indicating an abnormality.

Here, the detailed configuration of the foreign matter inspection device 20 will be described. Fig. 2 is a view schematically showing the configuration of a foreign matter inspection device according to the first embodiment. The foreign matter inspection device 20 includes a stage 21 that holds the wiring substrate 80, a detection head 22 that inspects whether or not the foreign matter 85 is present on the substrate of the wiring substrate 80 or the wafer 90, and a control portion 23 that utilizes the control of the detection head 22 and The output signal from the detecting head 22 determines whether or not foreign matter 85 is present on the substrate.

The stage 21 includes a substrate holding mechanism such as an electrostatic chuck mechanism or a vacuum chuck mechanism that fixes the wiring substrate 80 to keep the wiring substrate 80 stationary during inspection.

The detecting head 22 includes a substrate inspection portion 221 that checks for the presence or absence of foreign matter 85 present on the wiring substrate 80 or the wafer 90, and a support portion 222 that supports the substrate inspection portion 221. The detecting head 22 is driven by a driving mechanism (not shown) in the horizontal direction and the height direction.

As the base inspection unit 221, for example, a full-sensing unit such as a sensor sheet that can detect the foreign matter 85 existing on the substrate and the position information can be pressed when pressed with a specific force in contact with the substrate. . For the full pressure sensitive unit, for example, a short strip-shaped pressure sensitive electrode having a pressure sensitive layer including a pressure sensitive resistor on the upper surface and extending in the first direction may be used in a second direction orthogonal to the first direction. a plurality of first sheet regions including an elastomer material disposed at a predetermined interval, and a short strip-shaped pressure-sensitive electrode having a pressure-sensitive layer including a pressure-sensitive resistor extending on the upper surface and extending in the second direction The first direction includes a plurality of elastic materials at a specific interval. The sheet region is attached in such a manner that the pressure sensitive layers are in contact with each other.

In the overall pressure sensitive unit, the short strip-shaped pressure sensitive electrodes disposed in the respective sheet regions intersect, and the respective intersections function as the pressure sensitive portions, and the respective pressure sensitive electrodes are sequentially energized to measure the pressure sensitive electrodes. The resistance is thereby measured by the pressure distribution in the surface of the sensor sheet. The signal obtained at the time of measurement is output to the control unit 23. Further, as the substrate inspection portion 221, it is also possible to detect the presence or absence of foreign matter 85 on the substrate without contact, and for example, an optical detection unit that scans and irradiates light of a wavelength of the ultraviolet region and receives the reflection thereof can be used. Light or scattered light to detect the presence or absence of foreign matter 85 on the surface of the substrate.

The control unit 23 includes an inspection target setting unit 231, an inspection control unit 232, a base material storage unit 233, and a foreign matter existence determination unit 234. The inspection target setting unit 231 sets whether the substrate to be inspected is the wiring substrate 80 or the wafer 90 of the first layer laminated on the wiring substrate 80. Here, the first board of the wiring board is used as the first stage, and the first layer of the memory wafer laminated on the wiring board is used as the second stage, and the memory chip of the second layer is used as the third stage. The memory chip of the nth layer is referred to as the (n+1)th segment. This is a setting for lowering the lower surface of the substrate inspection portion 221 at the time of inspection, and designating an area to be inspected by the substrate inspection portion 221. The item to be set includes the type or number of stages of the wafer to be manufactured.

The inspection control unit 232 performs control so as to move the detection head 22 to the region facing the substrate and press the substrate with a specific pressure based on the number of segments set by the inspection target setting unit 231, and then the detection head 22 is self-controlled. The substrate is separated.

The base data storage unit 233 stores the base material of the arrangement position of the wiring substrate 80 and the wafer 90 as the base. This is applied to the substrate inspection when the upper surface of the wiring substrate 80 of the unlaminated wafer 90 is inspected, and when the upper surface of the wiring substrate 80 on which the wafer 90 is laminated, that is, the upper surface of the uppermost wafer 90 is inspected. Since the pressure of the portion 221 is different, it is used to store the wiring substrate 80 or the place where the wafer 90 is placed in advance.

3 is a view showing an example of a base material, wherein (a) is a view showing an arrangement area of a base in a first stage (on a wiring board), and (b) is a second stage (on a first layer memory wafer). (c) is a view showing a base arrangement area in the third stage (on the memory chip of the second layer). As shown in FIG. 3(a), in the case of the first stage, all of the lower surfaces of the base inspection portion 221 are the wiring board arrangement regions 2311 (base arrangement regions). That is, all of the lower surfaces of the substrate inspection portion 221 are in contact with the upper surface of the wiring substrate 80. On the other hand, as shown in FIG. 3(b) or (c), when the wafer 90 is laminated, a part of the lower surface of the substrate inspection portion 221 becomes the wafer arrangement region 2312 (base arrangement region), and the wafer arrangement region 2312 It becomes a wafer non-arrangement area 2313 in which nothing is disposed. Therefore, at the time of the foreign matter inspection, only the wafer arrangement region 2312 is pressed, and no pressure is applied to the wafer non-arrangement region 2313. Further, the area of the wafer arrangement region 2312 differs depending on the number of segments. Here, only the data of the third stage is displayed, but the base material is stored in the base data storage unit 233 based on the number of wafers stacked. Further, the base material of each segment is stored in the base material storage unit 233 in accordance with the type of the semiconductor wafer.

The foreign matter presence determining unit 234 acquires the base substrate 221 from the base The data (signal) of the inspection result of the state of the surface is used to determine the presence of foreign matter. In this case, the base inspection unit 221 acquires the data of the inspection result indicating the pressure value at each position on the base, and acquires the base data corresponding to the number of segments set by the inspection target setting unit 231 from the base data storage unit 233. The data of the inspection result is extracted as a foreign matter-existing region as compared with the substrate-arranged region shown in the substrate data, and the region on the substrate having a higher pressure than the other portions is extracted. At this time, for example, a region in which the pressure value is higher than a specific ratio compared with other portions can be used as the foreign matter existence region. Thereby, the hardness of the foreign matter 85 can be considered according to the magnitude of the pressure value, and the hardness having a specific value or more can be determined as the foreign matter 85 to be removed. The determination result of the foreign matter existence determining unit 234 is output to the system control device 70.

Next, the foreign matter detecting process in the wafer lamination process will be described. Fig. 4 is a flowchart showing an example of the procedure of the foreign matter detecting process in the first embodiment, and Fig. 5 is a view schematically showing the state of the wafer lamination process in the semiconductor manufacturing system of the first embodiment. Here, a case where the foreign matter removing device 30 and the foreign matter inspecting device 20 and the wafer layering device 40 are present on the same line will be described as an example.

First, the wiring substrate 80 as a semiconductor product is transferred from the loader 10 to the foreign matter inspection device 20 by the transfer device 60 (step S11). When the wiring board 80 is placed at a specific position by the transport device 60, the foreign matter inspection apparatus 20 starts the foreign matter detection processing (step S12, FIG. 5(a)).

In the foreign matter detecting process, the inspection control unit 232 of the control unit 23 performs control to lower the detecting head 22 to the stage corresponding to the number of types of the wafer 90 set by the inspection target setting unit 231. Wiring The detection head 22 (base inspection portion 221) presses the wiring substrate 80 with a specific force until the substrate 80 comes into contact with each other. When the detecting head 22 is brought into contact with the wiring board 80, the position of the detecting head 22 is aligned by the position alignment marks provided in the wiring board 80, and then the detecting head 22 is brought into contact with the wiring board 80.

Fig. 6 is a view schematically showing a state of foreign matter detecting processing in a wiring board, wherein (a) schematically shows the principle of foreign matter detection, and (b) shows the presence of foreign matter obtained by foreign matter detecting processing. A diagram of an example of information. As shown in FIG. 6( a ), when the base inspection unit 221 presses the wiring board 80 with a specific force, the pressure from the wiring board 80 to the detection head 22 is detected at each position of the base inspection unit 221 . When the substrate, that is, the upper surface of the wiring substrate 80 is flat, the pressure P1 is the same at any position, but if the foreign matter 85 is present, only the portion of the pressure P2 is higher than the surrounding. Such a pressure distribution is acquired by the base inspection unit 221 and is sent to the control unit 23.

The foreign matter existence determining unit 234 of the control unit 23 compares the pressure to the surrounding ratio based on the data of the pressure distribution acquired from the base inspection unit 221 and the base data of the corresponding number of segments stored in the base data storage unit 233. The higher foreign matter existence area is extracted together with the position information, and transmitted to the system control device 70 as foreign matter presence information. As shown in FIG. 6(b), the foreign matter presence information is information indicating where the foreign matter 85 exists on the wiring substrate 80. Here, the state in which the foreign matter existence region 2315 exists in the wiring substrate arrangement region 2311 (base arrangement region) is shown. .

Here, the foreign matter detecting process on the wiring substrate 80 is described here, and the foreign matter inspection on the upper surface of the wafer 90 laminated on the wiring substrate 80 is described. The measurement process is also performed in the same manner. FIG. 7 and FIG. 8 are diagrams schematically showing a state of foreign matter detecting processing in a wafer, wherein (a) schematically shows the principle of foreign matter detection, and (b) shows a foreign matter detecting process. A diagram of an example of foreign matter presence information. In the foreign matter detecting process on the upper surface of the wafer 90, the pressure distribution is as shown in Fig. 7 (a) or Fig. 8 (a), and the pressure in the region where the wafer 90 is not disposed is zero, and is detected in the region where the wafer 90 is disposed. Specific pressure P3. Therefore, in the region where the wafer 90 is disposed, a region where the pressure P4 having a higher specific ratio than the pressure P3 is detected is extracted as the foreign matter existence region 2315. FIG. 7(b) or FIG. 8(b) shows foreign matter existence information in a state in which the foreign matter existence region 2315 exists in the wafer arrangement region 2312 (base arrangement region).

Further, a region having a higher pressure than the specific pressures P1 and P3 may be directly used as the foreign matter existence region 2315, or may be higher than a specific pressure P1 and P3 (peripheral pressure). The region of the pressures P2 and P4 having a ratio (or a specific value) or more is used as the foreign matter-existing region 2315, whereby the foreign matter 85 having a hardness smaller than the specific hardness of the crucible in which the laminated wafer 90 is not damaged may be used. Not as a removal object.

The system control device 70 determines the presence or absence of the foreign matter 85 on the wiring board 80 based on the result of the foreign matter detecting process (step S13). When there is no foreign matter 85 in the step S13 (NO in step S13), the wiring board 80 is transported to the wafer stacking apparatus 40 (step S26). In the wafer lamination device 40, a wafer lamination process is performed, which includes the steps of: driving the wafer placement head 42, taking the wafer 90 having the adhesive layer on the lower surface from the wafer stage 41, and placing the wafer 90 on the wiring substrate according to the substrate data. After a specific position on 80, The wafer 90 is laminated on the wiring substrate 80 by pressing at a specific pressure. Then, after the wafer 90 is laminated on the wiring board 80, the wafer 90 is transported to the unloader 50 by the transport device 60, and the foreign matter removing process is completed.

In the case where the foreign matter 85 is present (in the case of the step S13), the wiring board 80 is transported to the foreign matter removing device 30, and the new wiring board 80 is not transported from the loader 10 to the foreign matter inspection device 20 (step S14). Further, the system control device 70 instructs the foreign matter removing device 30 to perform the foreign matter removing process on the wiring substrate 80 on which the foreign matter 85 is determined to be present (step S15, FIG. 5(b)). In FIG. 5(b), a stopper portion 61 is disposed between the loader 10 and the foreign matter inspection device 20 so that the new wiring substrate 80 is not supplied to the foreign matter inspection device 20.

In the foreign matter removing process, as shown in FIG. 5(b), the foreign matter removing device 30 attaches the adhesive tape 31 to a region including the upper surface of the wiring substrate 80 on which the foreign matter 85 is present, and peels off the foreign tape 85. . At this time, the foreign matter removing device 30 is lowered until the adhesive tape 31 wound on the roller comes into contact with the upper surface of the wiring substrate 80, and then moved in the horizontal direction so that the adhesive tape 31 is in full contact with the upper surface of the wiring substrate 80. . Here, the adhesive tape 31 is a wound type. After the adhesive tape 31 is brought into contact with the upper surface of the wiring board 80, the foreign matter removing device 30 rises and peels off from the upper surface of the wiring board 80. Further, the adhesive tape 31 may not be brought into full contact with the upper surface of the wiring board 80, and the adhesive tape 31 may be brought into contact with only a specific range including the region where the foreign matter 85 exists, based on the foreign matter presence information.

After that, the transport device 60 transports the wiring substrate 80 after the foreign matter removal to the foreign matter inspection device 20 (step S16), and the foreign matter inspection device 20 performs the foreign matter detection process (step S17, FIG. 5(c)). Foreign matter detection processing is performed in steps The same processing as described in S12 is performed, and the result is transmitted to the system control device 70.

Then, the system control device 70 determines the presence or absence of the foreign matter 85 on the wiring board 80 based on the result of the foreign matter detecting process (step S18). When there is a foreign matter 85 (YES in step S18), it is determined whether or not there is a foreign matter 85 at the same portion as the region (position) detected last time (step S19).

When the foreign matter 85 is present in the same region as the region detected last time (in the case of the step S19), the foreign matter 85 is not removed in the foreign matter removing process in the step S15, or the foreign matter 85 is bitten into the substrate inspection portion 221 It is not possible to remove any of the foreign matter 85. Therefore, the system control device 70 notifies the user or manager of the semiconductor manufacturing system 1 of the abnormality (step S25), and the processing ends.

In the case where the foreign matter 85 is not present in the same region as the region detected last time (in the case of NO in the step S19), the transport device 60 transports the wiring substrate 80 to the foreign matter removing device 30 again (step S20). The foreign matter removal processing described in step S15 is performed (step S21). After that, the wiring board 80 is transported to the foreign object inspection device 20 (step S22), and after the foreign matter detection processing is performed (step S23), it is determined whether or not the foreign matter 85 of the system control device 70 is present (step S24). In the case where the foreign matter 85 is present (YES in step S24), the process returns to step S19.

On the other hand, when there is no foreign matter 85 in the steps S18 and S24 (in the case of NO in steps S18 and S24, respectively), the wiring board 80 is transported to the wafer stacking apparatus 40 (step S26), and is performed on the wiring substrate 80. Processing of the upper layered wafer 90. At this time, the stopper portion 61 of FIG. 5(c) is released, and the new wiring substrate 80 is supplied from the loader 10 to the foreign matter inspection device by the transport device 60. Set 20. With the above, the foreign matter detecting process ends. Further, as shown in FIG. 5, the foreign matter detecting process and the foreign matter removing process and the wafer layering process can be performed in parallel.

In the first embodiment, before the laminated wafer 90, the foreign matter 85 is detected on the wiring substrate 80 or the wafer 90 as the base. When the foreign matter 85 is present, the foreign matter 85 is removed and the wafer 90 is laminated. Thereby, when the wafer 90 is laminated, it is possible to prevent the wafer 90 from being broken due to the foreign matter 85 existing on the substrate.

(Second embodiment)

In the first embodiment, the foreign object detecting device and the foreign matter removing device are moved between the foreign matter inspection device and the foreign matter removing device to perform the foreign matter detecting process and the foreign matter removing process. In the second embodiment, the second embodiment is described. In the case where the foreign matter removal processing is performed in the foreign matter inspection apparatus, the foreign matter removal processing is performed without moving the wiring board from the inspection position.

FIG. 9 is a flowchart showing an example of the procedure of the foreign matter detecting process in the second embodiment, and FIG. 10 is a view schematically showing the state of the wafer lamination process in the semiconductor manufacturing system of the second embodiment. Here, the case where the foreign matter removing device 30 and the foreign matter inspecting device 20 and the wafer layering device 40 exist on the same line will be described as an example.

In the wafer lamination process of the second embodiment, the foreign object inspection device 20, the foreign matter removing device 30, and the wafer layering device 40 are sequentially disposed between the loader 10 and the unloader 50, and are loaded by the transport device 60. The wiring board 80 is transferred between the apparatus 10 and the foreign matter inspection apparatus 20, between the foreign object inspection apparatus 20 and the wafer lamination apparatus 40, and between the wafer lamination apparatus 40 and the unloader 50. specific In the transfer device 60, the wiring board 80 is transported from the loader 10 to the foreign matter inspection apparatus 20, and when the foreign matter inspection apparatus 20 determines that the foreign matter 85 does not exist, the wafer stacking apparatus 40 performs wafer lamination. After the processing, the wiring substrate 80 is transported to the unloader 50. On the other hand, when it is determined that the foreign matter 85 is present in the foreign matter inspection device 20, the foreign matter removal processing by the foreign matter removing device 30 is performed at the position of the foreign matter inspection device 20, and the abnormality detection processing is performed again in the foreign matter inspection device 20.

Therefore, in the second embodiment, the foreign matter removing device 30 can move the disk 32 wound with the adhesive tape 31 to the wiring substrate 80 in order to remove the foreign matter 85 provided on the upper surface of the wiring substrate 80 in the foreign matter inspection device 20. The position of the position has a configuration that is held by the telescopic member 33.

Further, in order to remove the foreign matter, the foreign object inspection device 20 can raise the height of the detecting head 22 to a height that does not come into contact with the drum 32 around which the adhesive tape 31 of the foreign matter removing device 30 is wound, and can be configured to be movable up and down.

Next, the foreign matter detecting process in the wafer lamination process will be described. First, the wiring substrate 80 as a semiconductor product is transferred from the loader 10 to the foreign matter inspection device 20 by the transfer device 60 (step S31), and the detection head 22 is lowered to a specific position on the wiring substrate 80 (step S32). The foreign matter detecting process by the foreign matter inspection device 20 is performed (step S33, FIG. 10(a)). Since the foreign matter detection processing has been described in detail in the first embodiment, the description thereof will be omitted below. The result of the foreign matter detecting process is transmitted to the system control device 70.

The system control device 70 determines the presence or absence of the foreign matter 85 on the wiring board 80 based on the result of the foreign matter detecting process (step S34). In the foreign matter 85 does not exist In the case of the case (NO in step S34), the transport device 60 transports the wiring substrate 80 to the wafer stacking device 40 (step S47), and after the wafer lamination process is performed, the foreign matter detecting process ends. On the other hand, when the foreign matter 85 is present (in the case of the step S34), the detecting head 22 is raised to a specific height (step S35), and the foreign matter removing process by the foreign matter removing device 30 is performed (step S36, 10(b)). In the foreign matter removing process, the foreign matter removing device 30 extends the telescopic member 33 so that the drum 32 reaches the wiring substrate 80 disposed in the region of the foreign matter inspecting device 20, and rolls the roller 32 on the wiring substrate 80 by winding The foreign tape 85 on the wiring substrate 80 is removed by the adhesive tape 31 on the drum 32. Thereafter, the drum 32 is returned to the original position by retracting the telescopic member 33, and the foreign matter removing process ends.

Thereafter, the detecting head 22 of the foreign matter inspection device 20 is lowered to a specific height on the wiring substrate 80 after the foreign matter removing process (step S37), and foreign matter detecting processing is performed (step S38). The system control device 70 determines the presence or absence of the foreign matter 85 on the wiring board 80 based on the result of the foreign matter detecting process (step S39).

When there is a foreign matter 85 (YES in step S39), it is determined whether or not the foreign matter 85 exists in the same portion (step S40). When the foreign matter 85 is present in the same portion (in the case of the step S40), the foreign matter 85 is not removed in the foreign matter removing process in the step S36, or the foreign matter 85 is bitten into the base inspection portion 221 and the foreign matter 85 is not removed. situation. Therefore, the system control device 70 notifies the user or manager of the semiconductor manufacturing system 1 of the abnormality (step S46), and the processing ends.

Moreover, there is no foreign matter 85 in the same portion (NO in step S40) In the case of the case, the detection head 22 is raised to a specific height (step S41), and the foreign matter removal processing by the foreign matter removing device 30 is performed in the same manner as in step S36 (step S42). After that, the detection head 22 of the foreign matter inspection apparatus 20 is again lowered to a specific height on the wiring board 80 after the foreign matter removal processing (step S43), and the foreign matter detection processing is performed (step S44). Further, the system control device 70 determines the presence or absence of the foreign matter 85 on the wiring board 80 based on the result of the foreign matter detecting process (step S45). As a result, when there is a foreign matter 85 (YES in step S45), the process returns to step S40.

On the other hand, when it is determined that there is no foreign matter 85 in step S39 and step S45 (in the case of NO in step S39 or S45), the wiring board 80 is transported to the wafer stacking apparatus 40 by the transport device 60 (step S47), performing wafer lamination processing. With the above, the foreign matter detecting process ends.

In the second embodiment, the foreign matter inspection process is performed again after the foreign matter removing process is performed without moving the wiring board 80 from the foreign matter inspection device 20. With this configuration, it is not necessary to reciprocate the wiring board 80 between the foreign matter inspection device 20 and the foreign matter removing device 30. Therefore, it is possible to eliminate the temporary stoppage of the removal of the wiring substrate 80 from the loader 10 when the foreign matter 85 is present. Or the complicated control such as the round trip between the foreign matter inspection device 20 and the foreign matter removing device 30 of the conveying device 60. Moreover, since it is not necessary to move the wiring board 80, it is not necessary to perform the positional alignment between the detecting head 22 in the foreign matter inspection apparatus 20 and the same wiring board 80 after the second time.

(Third embodiment)

In the first and second embodiments, the foreign matter removing device, the foreign matter detecting device, and the wafer laminating device are arranged on the same line, and the third embodiment is shown. In the embodiment, the foreign matter detecting process in the case where the foreign matter removing device, the foreign matter detecting device, and the wafer layering device are disposed on different lines will be described.

Fig. 11 is a flowchart showing an example of the procedure of the foreign matter detecting process in the third embodiment. Here, although not shown in the drawings, for example, in the semiconductor manufacturing system in which the foreign matter inspection device 20 and the wafer lamination device 40 are on the same line and the foreign matter removing device 30 is disposed apart from the line, for example, The foreign matter detection processing will be described. Further, the description will be made below with reference to the symbols of Fig. 1 .

First, the wiring board 80 as a semiconductor product is transported from the loader 10 to the foreign matter inspection apparatus 20 by the transport apparatus 60 (step S61), and the foreign material inspection apparatus 20 is performed by the foreign material inspection apparatus 20 (step S62). The foreign matter detecting process has been described in detail in the first embodiment, and thus the description thereof is omitted here. Further, the system control device 70 determines the presence or absence of the foreign matter 85 on the wiring board 80 based on the result of the foreign matter detecting process (step S63).

When it is determined that there is no foreign matter 85 in the foreign matter detecting process (NO in step S63), the wiring board 80 is directly transferred to the wafer layering apparatus 40 (step S64), and after the wafer layering process is performed, the process ends.

On the other hand, when it is determined that the foreign matter 85 is present in the foreign matter detecting process (YES in step S63), the wiring device 80 is transported by the transport device 60 to be separated from the line on which the foreign matter detecting device 20 is provided. The foreign matter removing device 30 (step S65). Then, the foreign matter removing process by the foreign matter removing device 30 is performed (step S66). Since the foreign matter removal processing is the same as that described in the first embodiment, the description thereof will be omitted. Moreover, the wiring substrate 80 after the foreign matter removal processing is completed by the transport device 60 The load is transferred to the loader 10 (step S67), and the process ends. In addition, the process from step S61 is performed again on the wiring board 80 transferred to the loader 10. After the wiring board 80 is transported to the foreign matter removing device 30, the processing of the new wiring board 80 and the foreign matter removing processing are performed in parallel on the line having the foreign matter inspection apparatus 20 and the wafer layering apparatus 40.

As described above, according to the third embodiment, since the foreign matter removing device 30 and the line in which the foreign matter detecting device 20 and the wafer layering device 40 are provided are provided separately, the foreign matter removing process and the wafer layering process can be simultaneously performed in parallel. As a result, as described in the first and second embodiments, it is possible to prevent the wafer lamination process from being stopped until the foreign matter removing process is completed when the foreign matter 85 is detected.

In the foreign matter inspection device 20, when the hardness of the detected foreign matter 85 is smaller than a specific value, the foreign matter removal process is not performed, and the foreign matter removal process is performed only when the specific value is equal to or greater than a specific value. The foreign matter 85 having a hardness of the wafer 90 which is not damaged is present on the substrate and does not need to be removed. As a result, the effect of the manufacturing step can be shortened compared to the case where all the foreign matter 85 is removed.

The embodiments of the present invention have been described, but the embodiments are presented as examples and are not intended to limit the scope of the invention. The various embodiments of the invention can be embodied in various other forms and various modifications, substitutions and changes can be made without departing from the scope of the invention. The scope of the invention and the scope of the invention are intended to be included within the scope of the invention and the scope of the invention.

1‧‧‧Semiconductor Manufacturing System

10‧‧‧Loader

20‧‧‧ Foreign object inspection device

21‧‧‧stage

22‧‧‧Detector

23‧‧‧Control Department

30‧‧‧ Foreign matter removal device

31‧‧‧Adhesive tape

32‧‧‧Roller

33‧‧‧Flexible members

40‧‧‧ Wafer layering device

41‧‧‧ wafer mounting table

42‧‧‧ wafer configuration head

50‧‧‧ Unloader

60‧‧‧Transporting device

61‧‧‧Departure

70‧‧‧System control device

80‧‧‧ wiring substrate

85‧‧‧ Foreign objects

90‧‧‧ wafer

221‧‧‧Base Inspection Department

222‧‧‧Support Department

231‧‧‧Check object setting section

232‧‧‧Check Control Department

233‧‧‧Base Data Storage Department

234‧‧‧ Foreign Body Presence Determination Department

2311‧‧‧Wiring board configuration area

2312‧‧‧ wafer configuration area

2313‧‧‧ wafer non-configuration area

2315‧‧‧ Foreign body existence area

P1‧‧‧ pressure

P2‧‧‧ pressure

P3‧‧‧ pressure

P4‧‧‧ pressure

Fig. 1 is a view schematically showing the configuration of a semiconductor manufacturing system including the foreign matter inspection device according to the first embodiment.

Fig. 2 is a view schematically showing the configuration of a foreign matter inspection device according to the first embodiment.

3(a) to (c) are diagrams showing an example of the base material.

Fig. 4 is a flowchart showing an example of the procedure of the foreign matter detecting process of the first embodiment.

(a) to (c) of FIG. 5 are views showing a state of wafer lamination processing in the semiconductor manufacturing system of the first embodiment.

6(a) and 6(b) are diagrams schematically showing a state of foreign matter detecting processing in the wiring board.

7(a) and 7(b) are diagrams schematically showing a state of foreign matter detecting processing in a wafer.

8(a) and 8(b) are diagrams schematically showing a state of foreign matter detecting processing in a wafer.

Fig. 9 is a flowchart showing an example of a procedure of foreign matter detecting processing in the second embodiment.

FIGS. 10(a) and 10(b) are diagrams schematically showing a state of wafer lamination processing in the semiconductor manufacturing system of the second embodiment.

Fig. 11 is a flowchart showing an example of a procedure of foreign matter detecting processing in the third embodiment.

20‧‧‧ Foreign object inspection device

21‧‧‧stage

22‧‧‧Detector

23‧‧‧Control Department

80‧‧‧ wiring substrate

85‧‧‧ Foreign objects

221‧‧‧Base Inspection Department

222‧‧‧Support Department

231‧‧‧Check object setting section

232‧‧‧Check Control Department

233‧‧‧Base Data Storage Department

234‧‧‧ Foreign Body Presence Determination Department

Claims (10)

A foreign matter inspection device that checks for the presence or absence of foreign matter on a surface of an inspection object including a wiring substrate or a wiring substrate on which a wafer is laminated, and includes: a detection head including a pressure sensitive unit, and supporting the feeling a support portion of the pressing unit movable in a horizontal direction and a height direction; and a control mechanism that moves the detecting head on the inspection object to perform a foreign matter detecting process; the control mechanism includes: a base material storage mechanism, wherein the storage includes a base material indicating an arrangement position of the wiring substrate on which the wafer is not disposed, or a base arrangement region in which an arrangement position of a wafer of the uppermost layer of the wiring substrate of the wafer is stacked; and an inspection control mechanism for causing the detection head and the The specific position contact on the inspection object is controlled by a specific force; and the foreign matter existence determining means obtains inspection data indicating the pressure value of each position from the pressure sensitive unit, and refers to the base material storage device. The above substrate data is in the above substrate arrangement area according to Check information when there is a pressure ratio of greater area surrounding the case, which region is extracted as foreign matter exists. A foreign matter inspection device that checks for the presence or absence of foreign matter on a surface of an inspection object including a wiring substrate or a wiring substrate on which a wafer is laminated, and includes: a detection head that detects presence on the inspection object Surface foreign matter And a control mechanism that moves the detection head on the inspection object to perform foreign matter detection processing, and extracts foreign matter based on inspection data obtained from the inspection head indicating the state of the upper surface of the inspection object region. The foreign matter inspection device according to claim 1, wherein the foreign matter presence determining means extracts a region in which the pressure in the base arrangement region is higher than a specific ratio by a specific ratio when the inspection target is the wiring substrate in which the wafer is laminated. The above foreign matter exists in the area. A semiconductor manufacturing apparatus comprising: a wafer build-up portion that is disposed at a specific position on a surface of a processing object including a wiring substrate or a wiring substrate on which a wafer is laminated, and presses the wafer via an adhesive layer to cause the wafer And a foreign matter inspection unit that checks for the presence or absence of foreign matter on the upper surface of the processing target before stacking the wafer in the wafer layering portion; and the foreign object inspection unit includes a detection head that detects the presence of the processing target a presence or absence of the presence of foreign matter on the upper surface; and a control mechanism that moves the detection head on the processing target to perform a foreign matter detection process, and based on the inspection data obtained from the detection head indicating the state of the upper surface of the processing object The area where the foreign matter is present is extracted. The semiconductor manufacturing apparatus of claim 4, wherein the detecting head of the foreign matter inspecting unit comprises: a pressure sensing unit; and a support unit that supports the pressure sensing unit and is movable in a horizontal direction and a height direction; the control mechanism of the foreign object inspection unit includes: a base data storage mechanism that stores the above-mentioned An arrangement position of the wiring board, or a base material of a base arrangement area in which the arrangement position of the wafer of the uppermost layer of the wiring board of the wafer is laminated; and an inspection control mechanism for setting the detection head and the specific position on the processing target Contacting and controlling by a specific force; and a foreign matter existence determining means for obtaining inspection data indicating the pressure value of each position from the pressure sensitive unit, referring to the base material in the base data storage device, on the base In the case where there is a region in which the pressure is higher than the surrounding area according to the above inspection data, it is extracted as a foreign matter existence region. The semiconductor manufacturing apparatus according to claim 5, wherein, in the case where the processing target is the wiring board in which the wafer is stacked, the foreign matter presence determining unit of the foreign matter inspection unit is configured to have a higher specific pressure in the base arrangement area than the surroundings. The region above the ratio is extracted as the above-mentioned foreign matter existence region. The semiconductor manufacturing apparatus according to any one of claims 4 to 6, further comprising a foreign matter removing unit that includes one of the pair of adhesive tapes wound around the drum, and the foreign matter inspection unit determines the processing target When there is a foreign matter on the upper surface, one of the above rollers is treated with the above-mentioned treatment The foreign matter is removed as the upper surface contacts and moves on the above-mentioned processing object. The semiconductor manufacturing apparatus according to claim 7, further comprising: a transfer unit that transports the processing target between the foreign object inspection unit, the foreign matter removal unit, and the wafer layering unit, wherein the transfer unit determines the processing in the foreign object inspection unit When there is a foreign matter on the surface of the object, the object to be processed is transported to the foreign matter removing unit, and the object to be processed is again transported to the foreign matter inspecting unit after the foreign matter removing process is completed. The semiconductor manufacturing apparatus according to claim 7, further comprising: a transport unit that transports the processing target between the foreign object inspection unit and the wafer layering unit, wherein the foreign matter removing unit further includes moving the one roller to the foreign object inspection unit In the case where the foreign object inspection unit determines that there is a foreign matter on the upper surface of the processing target, the foreign matter removing unit extends the telescopic support member to move the drum. The foreign matter on the processing target is removed to the processing target. The semiconductor manufacturing apparatus according to claim 7, wherein the foreign object inspection unit and the wafer layered portion are disposed on a same line; the foreign matter removing unit is disposed at a position different from the line; and further includes a transport unit including: first a conveying device that determines that the upper surface of the processing target is not in the foreign matter inspection unit When there is a foreign matter, the processing target is transported on the line; and the second transport device determines that the foreign object is present on the upper surface of the processing target, and the processing target is from the foreign object inspection unit. The conveyance is carried out to the foreign matter removing unit.