TW201324608A - 光阻層結構用於製作奈米尺度圖案的方法及其裝置 - Google Patents
光阻層結構用於製作奈米尺度圖案的方法及其裝置 Download PDFInfo
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Abstract
本發明是一種在光阻層以及承載基板上蝕刻出可具備有高深寬比(high aspect ratio)之奈米圖案的製造方法及其裝置,其使用兩種具有互補特性的光阻層作為蝕刻遮罩(Mask),搭配雷射直寫微影技術,開發可大面積、快速製作奈米尺度圖案的方法。特點是使用無機光阻材料作為第一層光阻材料,可以雷射直寫微影定義奈米尺度的圖案於第一層光阻層,再搭配高分子有機材料光阻層,作為第二層光阻材料,利用氧電漿對無機光阻層蝕刻率低,但是對於高分子有機光阻層蝕刻率高的特點,作為蝕刻遮罩增厚層;接著對於不同之承載基板材料,則可以選擇不同的感應偶合電漿-反應離子蝕刻(ICP-RIE)方法,繼續將此奈米尺度圖案轉印至承載基板上。
Description
本發明是關於次微米或是奈米級尺度圖案的製造領域,具備高產出率、可大尺寸加工面積、可加工出高精密度的圖案,同時兼具低成本特色的解決方案。而且不需要在無塵室的環境下,將次微米或是奈米尺度圖案刻於光阻上,或是進一步搭配感應偶合電漿-反應離子蝕刻(ICP-RIE)方法,將圖案轉印至承載基板上,是光電元件產業、半導體產業與能源產業等迫切需要之技術,例如常見的大容量光碟、矽晶太陽能抗反射層、發光二極體引光效率以及次波長光學元件等。
有關製造次微米與奈米級尺度圖案的設備與技術,一直是光電元件產業、半導體產業、能源產業、記錄媒體產業...等,各類相關產業中重要的產品生產機具,以及公司的營業製程技術機密。
其中,微影寫錄與轉印母模加工製程,一直是次微米或奈米結構圖案複製製程中關鍵的步驟。例如,在光記錄媒體產業需要奈米坑(pit)或是奈米寬度的軌溝(groove)在光阻層上,再經過電鑄過程形成母板(stamper);在半導體記錄媒體需要奈米坑圖案陣列(array)於矽晶圓以提高記錄密度;在能源或是光電元件產業需要在元件表面有微奈米尺度圖案,作為抗反射層,以提高電池吸收光能量效率;另外在提高發光二極體(LED)出光效率上,需要將圖案蝕刻至承載的藍寶石基板上。
先前技術中,製作週期性圖案微影所採用的方法計有:黃光微影、電子束微影、近場光束微影、原子力探針微影、雷射干涉微影、X光微影以及雷射直寫微影與奈米壓印等幾種方式。在工藝上是將一層符合蝕刻源的光阻材料層22平鋪於一基板21上,如圖二所示。
唯,前述各習用方法都有其限制,以常用的黃光微影製程為例,必須先行製作光遮罩(Mask),當需求不同圖案時,需重新製作不同圖案光罩,而光罩製作非常耗時,該製程的缺點在圖案製作彈性方面較差外,也因為使用光源直接曝光在高分子有機光阻材料上,故無法突破光學繞射極限(Optical diffraction limit)來獲得奈米等級的圖案,同時所獲得的蝕刻坑或是蝕刻線邊緣不夠平整。其餘方法的限制評估請見表一所列:
因此,為了解決前述的問題與缺陷,美國專利第7,465,530號與第7,782,744號揭露的一種技術,透過使用雷射直接微影技術,搭配無機光阻相變化材料,製造奈米級圖案。此技術具有可加工大尺寸面積、高精密度的圖案,同時兼具低成本快速製造奈米圖案的優點。
但是,因為無機光阻材料的相變化需要在高溫才能進行,這表示在雷射能量有限制時,無機光阻層厚度只能在數十奈米尺度,無法滿足高深寬比要求的圖案需求。此外,如果要將在光阻的奈米圖案轉印至所承載的基板(如藍寶石、石英、矽晶圓、碳化矽)上,因為無機光阻材料容易被酸性與鹼性的蝕刻液侵蝕,以及對於含鹵素元素電漿蝕刻抵擋效果差,故不易將奈米圖案轉移至基板上。
由此可見,前述習用技術與改良方案仍有諸多缺失,實非一良善之設計者,而亟待加以改良。
本案發明人鑑於上述習用的製作奈米尺度圖案微影技術所衍生的各項缺點,乃亟思加以改良創新,並經潛心研究後,終於成功研發完成本件光阻層結構用於製作奈米尺度圖案的方法。
本發明之主要目的在於提供一種光阻層結構用於製作次微米或是奈米尺度圖案的方法及其裝置,具備高產出率、可大尺寸加工面積、可加工出高精密度的圖案,同時兼具低成本特色,特別適合於大容量的光碟製造技術。
本發明之另一目的在於提供一種光阻層結構用於製作奈米尺度圖案的方法及其裝置,其適用光電元件產業、半導體產業、能源產業、記錄媒體產業...等,可針對不同需求調整製造方法,亦適用於高硬、脆的承載基板,如藍寶石基板、石英基板、碳化矽基板、矽晶圓。
可達成前述目的之一種光阻層結構用於製作奈米尺度圖案的方法及其裝置,乃鑑於無機光阻雖然有良好的氧電漿抵抗性,但是不耐酸鹼以及對含鹵素元素的電漿蝕刻抵抗性差的缺點。故,本案發明人在無機光阻下層,塗佈上一層高分子有機材料,作為蝕刻遮罩增厚層,再以氧電漿將無機光阻層之圖案轉移至高分子有機材料層上,用以增加蝕刻遮罩的遮蔽效果,這樣的做法特點是使用無機光阻作為第一層光阻材料,可以雷射直寫微影定義奈米尺度的圖案於第一層光阻材料,搭配高分子有機材料光阻,作為第二層光阻材料,利用無機光阻在氧電漿作用下蝕刻率很低的特點,作為奈米圖案定義層,以及氧電漿是絕佳蝕刻高分子有機材料光阻的特點,作為蝕刻遮罩增厚層,製作一層能夠耐酸鹼及抵抗含鹵素元素電漿蝕刻的光阻,作為蝕刻遮罩材料,對於不同之承載基板材料則可以選擇不同的感應偶合電漿-反應離子蝕刻(ICP-RIE)方法,繼續將此奈米尺度圖案轉印至承載基板上。
本發明所稱在預定製作奈米尺度圖案的承載基板,該承載基板上先旋轉塗佈一層高分子有機光阻層,該有機光阻層上濺鍍或蒸鍍一層無機光阻層。該無機光阻層具有雷射熱寫、縮小燒錄點尺寸以突破繞射極限、易於酸、鹼液中顯影、可抵抗氧電漿蝕刻的優點,主要採用化學成分中具有週期表VIA族(group 16)元素的材料;而該有機光阻層具有抵抗含鹵素元素(F、Cl)電漿氣氛蝕刻的優點,主要採用PMMA、polyester或epoxy系列材料。
該承載基板製作奈米尺度圖案係採取雷射直寫微影系統,含r-theta或是xy table,並可根據該承載基板的材料,利用感應偶合電漿-反應離子蝕刻(ICP-RIE)方法控制,轉印光阻層奈米圖案於承載基板(如藍寶石、石英、矽晶圓、碳化矽)上。
現以轉印藍寶石基板當作實施例,該承載基板製作奈米圖案之蝕刻遮罩與奈米圖案結構製作流程圖,如圖一所示,製程步驟簡介如下:
步驟1. 首先在該承載基板11上,旋塗一層高分子有機光阻層12(光阻劑為SU-8 2000.5)作為第一層光阻材料,之後使用濺鍍或是蒸鍍技術,在高分子有機光阻層12上,鍍上一層無機光阻層13作為第二層光阻材料,即得到一尚未定義圖案之雙層光阻蝕刻遮罩。
步驟2. 在未定義圖案之高分子有機光阻層12與無機光阻層13等雙層光阻蝕刻遮罩的該承載基板11上,使用雷射14直寫微影技術,在第二層無機光阻層13上定義出所需之奈米尺寸圖案,並使用蝕刻液浸泡,去除經雷射14微影技術所定義位置之無機光阻層13,即得到具奈米圖案之無機光阻層13。
步驟3. 接著使用乾蝕刻技術之氧電漿15,透過第二層的該無機光阻層13圖案對第一層的該高分子有機光阻層12進行蝕刻開孔,當完成開孔製程後,即定義出所需具奈米圖案之蝕刻遮罩。
步驟4. 在此具奈米圖案之蝕刻遮罩之該承載基板11上,使用溼蝕刻或乾蝕刻技術進一步進行蝕刻,以獲得奈米尺度之微結構,將具有雙光阻層之該承載基板11上製作奈米圖案。
該製作奈米圖案的承載基板11可為藍寶石基板(sapphire)、玻璃基板(glass)、石英基板(quartz)、矽晶圓(Si wafer)、碳化矽(SiC)、各式薄膜材料、金屬基板、塑膠基板或相關軟性基板等,以及高分子有機光阻層12與無機光阻層13之本體就是一種微結構,其微結構將可以應用於nano-pattern sapphire substrate、光子晶體、抗反射層、模具與生物檢測載具等。
上述說明中,本發明明確地利用高分子有機光阻層12與無機光阻層13作為光阻層材料,製作具有雙層光阻當成蝕刻遮罩使用,結合雷射直寫微影技術,對承載基板11製作具奈米圖案之蝕刻遮罩。
本發明具有生產成本低與製作良率高等優點,惟該實施例並非用於限制本發明之專利範圍,凡未脫離本發明技藝精神為之等效實施或變更,均應包含於本案專利範圍中。
11...承載基板
12...高分子有機光阻層
13...無機光阻層
14...雷射
15...氧電漿
21...基板
22...光阻材料層
圖一係為本發明光阻層結構用於製作奈米尺度圖案的方法流程圖;以及
圖二係為習用結構示意圖。
11...承載基板
12...高分子有機光阻層
13...無機光阻層
14...雷射
15...氧電漿
Claims (6)
- 一種光阻層結構用於製作奈米尺度圖案的裝置,其特徵在於,具有一承載用的基板,該基板上有一層高分子有機光阻層,該高分子有機光阻層上有一層無機光阻層;該無機光阻層具有奈米圖案,該奈米圖案是由雷射直寫定義並經蝕刻液蝕刻形成;該高分子有機光阻層具有奈米圖案,該奈米圖案是由氧電漿蝕刻將該無機光阻層的奈米圖案轉印形成,使該無機光阻層與該高分子有機光阻層皆具有該奈米圖案。
- 如申請專利範圍第1項所述光阻層結構用於製作奈米尺度圖案的裝置,其中,該無機光阻層為化學成分中具有週期表VIA族元素的材料。
- 如申請專利範圍第1項所述光阻層結構用於製作奈米尺度圖案的裝置,其中,該有機光阻層是採用PMMA、polyester或epoxy系列材料。
- 一個光阻層結構用於製作奈米尺度圖案的方法,首先在欲製作奈米尺度圖案的承載基板上先旋轉塗佈一層高分子有機光阻層,再於該有機光阻層上濺鍍或蒸鍍一層無機光阻層,然後利用雷射定義奈米圖案於該無機光阻層上,經過蝕刻形成圖案,再以氧電漿將圖案轉印至該有機光阻層,使該無機光阻層與該有機光阻層上皆具有奈米圖案,而能完成承載基板上的奈米尺度圖案。
- 如申請專利範圍第4項所述光阻層結構用於製作奈米尺度圖案的方法,其中,對於高硬、脆的承載基板,在該無機光阻層與該有機光阻層上皆形成奈米圖案後,接著依照該承載基板的不同,使用不同的感應偶合電漿-反應離子蝕刻(ICP-RIE)方式,形成不同的電漿繼續蝕刻該承載基板,將該無機、有機光阻層的圖案轉印至該承載基板上。
- 如申請專利範圍第5項所述光阻層結構用於製作奈米尺度圖案的方法,其中,該高硬、脆的承載基板可使用藍寶石基板、石英基板、碳化矽基板、矽晶圓。
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US10424480B2 (en) | 2017-04-13 | 2019-09-24 | Tsinghua University | Method for making thin film transistor with nanowires as masks |
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US7092421B2 (en) * | 2003-08-30 | 2006-08-15 | Lucent Technologies Inc. | Unipolar, intraband optoelectronic transducers with micro-cavity resonators |
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TWI667193B (zh) * | 2017-04-13 | 2019-08-01 | 鴻海精密工業股份有限公司 | 奈米級溝道的製備方法 |
US10424480B2 (en) | 2017-04-13 | 2019-09-24 | Tsinghua University | Method for making thin film transistor with nanowires as masks |
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