TW201316133A - Step photolithography device and photolithography exposure method - Google Patents

Step photolithography device and photolithography exposure method Download PDF

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Publication number
TW201316133A
TW201316133A TW101130476A TW101130476A TW201316133A TW 201316133 A TW201316133 A TW 201316133A TW 101130476 A TW101130476 A TW 101130476A TW 101130476 A TW101130476 A TW 101130476A TW 201316133 A TW201316133 A TW 201316133A
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exposure
photoetching
workpiece
stage
stepping
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TW101130476A
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Chinese (zh)
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TWI561937B (en
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yong-hui Chen
Li-Wei Wu
Jun Zhang
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Ultra Clean Micro Electronics Equipment Shanghai Co Ltd
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70716Stages
    • G03F7/70725Stages control
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70775Position control, e.g. interferometers or encoders for determining the stage position

Abstract

A step photolithography device and a photolithography exposure method thereof. The step photolithography device includes: an illumination unit (1) for providing an exposure beam, a workpiece station (4) for supporting a base (7) to move with six degree of freedom within a large journey range, a mask station (2) for supporting a mask (9) to move synchronously relative to the workpiece station (4) within a small journey range during exposure, and a projection objective (6) for projecting a pattern on the mask (9) to the base (7) according to a predetermined scale, wherein when the workpiece station (4) steps to an exposure field, the mask station (2) moves synchronously to a position corresponding to the workpiece station (4) and expose at the same time.

Description

步進光蝕刻設備及光蝕刻曝光方法 Stepping photoetching device and photoetching exposure method

本發明有關於積體電路裝備製造領域,特別有關於一種步進光蝕刻設備及光蝕刻曝光方法。 The invention relates to the field of integrated circuit equipment manufacturing, and particularly relates to a stepping photoetching apparatus and a photoetching exposure method.

光蝕刻設備是一種將光罩圖案曝光成像到矽晶片上的設備。已知的光蝕刻設備包括步進重複式和步進掃描式。現有技術中所公開的使用縮減倍率投影物鏡的步進光蝕刻機中,該投影物鏡的倍率為縮減的,即按1:N的比率將光罩圖案藉由投影物鏡投射於基底上。現有技術中所公開的步進光蝕刻機所使用的工作件台,通常採用的結構為:粗動結構與微動結構相結合,或者是XY(水平方向)運動台與旋轉台相結合,甚至是單個的粗動台結構。而現有技術中的光蝕刻機的光罩台均為粗動台。 A photoetching device is a device that exposes a reticle pattern onto a ruthenium wafer. Known photoetching devices include step-and-repeat and step-and-scan. In the stepper photoetching machine using the reduced magnification projection objective disclosed in the prior art, the magnification of the projection objective is reduced, that is, the reticle pattern is projected onto the substrate by the projection objective at a ratio of 1:N. The work piece table used in the stepping photoetching machine disclosed in the prior art generally adopts a structure in which a coarse motion structure is combined with a micro motion structure, or an XY (horizontal direction) motion stage is combined with a rotary table, or even A single coarse motion table structure. In the prior art, the photomask of the photoetching machine is a coarse motion stage.

現有技術中的步進曝光方法為,當基底完成調平和對準後,在工作件台上步進至指定位置後,需使該工作件台保持一定精度的穩定狀態後才能進行曝光。採用傳統的縮減倍率的步進投影裝置和方法,工作件台的步進精度要求很高,並且穩定時間要求很短,為此,整台機組的難度較大,並且產能受穩定時間的嚴重影響。 The step exposure method in the prior art is that after the substrate is leveled and aligned, after stepping to the designated position on the workpiece table, the workpiece table needs to maintain a stable state of certain precision before exposure. With the conventional step-down projection device and method of reducing magnification, the step precision of the workpiece table is very high, and the stability time requirement is very short. For this reason, the whole unit is difficult and the capacity is seriously affected by the stabilization time. .

如專利US2001/0021009、US6287735及US2009/0201475中公開的技術方案內容所示,上述專利均採用減少工作件台 的品質、簡化工作件台的結構、最佳化控制方式等方式來改進步進光蝕刻機,但仍然存在步進穩定所需時間長,產率較低的缺陷。 As shown in the contents of the technical solutions disclosed in the patents US2001/0021009, US6287735, and US2009/0201475, the above patents all adopt a reduced work piece table. The quality of the work piece, the structure of the work piece is simplified, and the control method is optimized to improve the stepping photoetching machine, but there are still defects of long time required for step stabilization and low yield.

本發明的目的在於克服現有技術中存在的技術缺陷,提供一種步進光蝕刻設備及光蝕刻曝光方法,能有效減少步進穩定時間,進一步減少曝光所需總時間,使光蝕刻設備的產率提高。 The object of the present invention is to overcome the technical defects existing in the prior art, and provide a stepping photoetching apparatus and a photoetching exposure method, which can effectively reduce the step stabilization time, further reduce the total time required for exposure, and improve the yield of the photoetching apparatus. improve.

為了實現上述發明目的,本發明公開一種步進光蝕刻設備,包括:一照明單元,用於提供曝光光束;一工作件台,用於支撐一基底在大行程範圍內進行六維自由度運動;一光罩台,用於支撐一光罩在曝光時候在小行程範圍內相對上述工作件台同步運動;一投影物鏡,用於將光罩上圖形按預定比例投射至基底;其中,上述工作件台依次步進至曝光場後,上述光罩台同步運動至上述工作件台對應的位置並同時曝光。 In order to achieve the above object, the present invention discloses a stepping photoetching apparatus comprising: an illumination unit for providing an exposure beam; and a workpiece stage for supporting a substrate to perform six-dimensional degrees of freedom motion in a large stroke range; a reticle for supporting a reticle to move synchronously with respect to the workpiece stage in a small stroke range during exposure; a projection objective for projecting the reticle pattern onto the substrate at a predetermined ratio; wherein the workpiece After the stage is sequentially stepped to the exposure field, the reticle stage is synchronously moved to the corresponding position of the workpiece table and exposed at the same time.

更進一步地,該投影物鏡的投影倍率為1:5。 Further, the projection objective of the projection objective is 1:5.

更進一步地,該步進光蝕刻設備還包括一位置測量系統。 Further, the stepper photolithography apparatus further includes a position measuring system.

更進一步地,該工作件台的水平方向運動裝置為H型結構,垂直方向運動裝置為凸輪機構。 Further, the horizontal moving device of the workpiece table is an H-shaped structure, and the vertical moving device is a cam mechanism.

更進一步地,該光罩台的水平方向運動裝置為洛侖茲電機,垂直方向運動裝置為簧片機構。 Further, the horizontal movement device of the reticle stage is a Lorentz motor, and the vertical direction movement device is a reed mechanism.

更進一步地,該位置測量系統採用雷射干涉儀或編碼尺。 Further, the position measuring system employs a laser interferometer or a coder.

更進一步地,該光罩台同步運動至該工作件台對應的XY和Rz位置。 Further, the reticle stage is synchronously moved to the corresponding XY and Rz positions of the workpiece table.

本發明同時公開一種使用上述步進光蝕刻設備的光蝕刻曝光方法,包括:步驟一、進行曝光前準備工作;步驟二、工作件台步進至第一曝光場後,光罩台同步運動至該工作件台對應的位置並同時曝光;步驟三、判斷是否已經完成全部曝光場的曝光,如果判斷結果係“否”,則工作件台步進至下一曝光場後,光罩台同步運動至上述工作件台對應的位置並同時曝光,返回步驟三;如果判斷結果係“是”,則曝光結束。該步驟一包括放置光罩,放置基底,對上述基底實現全場對準。 The invention also discloses a photoetching exposure method using the above stepping photoetching apparatus, comprising: step one, preparing for pre-exposure preparation; step two, after stepping the workpiece table to the first exposure field, the photomask table is synchronously moved to The corresponding position of the work piece is exposed at the same time; step 3: judging whether the exposure of all the exposure fields has been completed, and if the judgment result is “No”, the work piece table is stepped to the next exposure field, and the reticle stage is synchronously moved. Go to the corresponding position of the above work piece table and expose at the same time, return to step 3; if the judgment result is "Yes", the exposure ends. This step one includes placing a reticle, placing the substrate, and achieving full field alignment of the substrate.

與現有技術相比較,本發明將現有技術中的工作件台的微動台轉移為光罩台的微動結構,使整台機組的難度降低。此外,採用本發明裝置工作時候,工作件台粗動到曝光區域附近時,含微動結構的光罩台立即動態跟蹤工作件台的位置,由於在小範圍內的高頻跟蹤類似於掃描光蝕刻機,此時可以同時曝光,因此,採用本裝置與方法不需要像傳統步進光蝕刻機結構那樣,光罩台不動,而工作件台步進必須位置穩定到指定精度內才可以曝光,所以說,採用本裝置與方法,步進穩定時間顯著減少,曝光總時間相應變少,產率相應變高。 Compared with the prior art, the present invention transfers the micro-motion stage of the work piece table in the prior art into the micro-motion structure of the reticle stage, so that the difficulty of the whole unit is reduced. In addition, when the apparatus of the present invention is used, when the workpiece table is coarsely moved to the vicinity of the exposure area, the mask stage containing the micro-motion structure immediately dynamically tracks the position of the workpiece stage, since the high-frequency tracking in a small range is similar to scanning photo-etching. The machine can be exposed at the same time. Therefore, the device and the method do not need to be like the conventional stepping photoetching machine structure, the reticle stage does not move, and the step of the workpiece table must be stable until the specified precision is exposed, so It is said that with the device and the method, the step stabilization time is significantly reduced, the total exposure time is correspondingly reduced, and the yield is correspondingly high.

下面結合附圖詳細說明本發明的一種具體實施例的步進光蝕刻設備及光蝕刻曝光方法。然而,應當將本發明理解成並不侷限於以下描述的這種實施方式,並且本發明的技術理念可以與其他習知技術或功能及那些習知技術相同的其他技術組合來實施。 A stepping photoetching apparatus and a photoetching exposure method according to an embodiment of the present invention will be described in detail below with reference to the accompanying drawings. However, the present invention should be construed as being not limited to the embodiments described below, and the technical idea of the present invention can be implemented in combination with other conventional techniques or functions and other techniques that are the same as those of the prior art.

在以下描述中,為了清楚展示本發明的結構及工作方式,將借助諸多方向性詞語進行描述,但是應當將“前”、“後”、“左”、“右”、“外”、“內”、“向外”、“向內”、“上”、“下”等詞語理解為方便用語,而不應當理解為限定性詞語。此外,在以下描述中所使用的“X軸或X向”一詞主要指與水平方向平行的坐標軸或方向;“Y軸或Y向”一詞主要指與水平方向平行同時與X軸垂直的坐標軸或方向;“Z軸或Z向”一詞主要指與X軸Y軸均垂直的坐標軸或方向;“Rx軸”一詞主要指繞X軸旋轉的方向;“Ry軸”一詞主要指繞Y軸旋轉的方向;“Rz軸”一詞主要指繞Z軸旋轉的方向。 In the following description, in order to clearly illustrate the structure and working mode of the present invention, it will be described by means of a plurality of directional words, but should be "front", "back", "left", "right", "outside", "inside" Words such as "outward", "inward", "upper", "lower", and the like are understood to be convenience terms and should not be construed as limiting words. Furthermore, the term "X-axis or X-direction" as used in the following description mainly refers to a coordinate axis or direction parallel to the horizontal direction; the term "Y-axis or Y-direction" mainly refers to a direction parallel to the horizontal direction and perpendicular to the X-axis. The axis or direction; the term "Z-axis or Z-direction" mainly refers to the coordinate axis or direction perpendicular to the X-axis Y-axis; the term "Rx-axis" mainly refers to the direction of rotation about the X-axis; "Ry-axis" The word mainly refers to the direction of rotation about the Y axis; the term "Rz axis" mainly refers to the direction of rotation about the Z axis.

請參見圖1,圖1是本發明的步進光蝕刻設備的結構示意圖。如圖1中所示,該步進光蝕刻設備包括照明系統1,光罩台(Mask Plate)2,及放置於光罩台2之上的光罩9,投影物鏡6,工作件台4及放置於工作件台4之上的基底7,以及整體框架5和位置測量系統3。本裝置實施例中,照明系統1採用汞燈照明,提供i線或gh線或ghi線曝光,形成常規照明。投影物鏡6採用1:M(M>1)的縮減式物鏡,較 佳地採用1:5的縮減式物鏡。在本發明中,台4採用粗動結構並放置於整台機組框架5之間。光罩台2採用微動結構並放置於整台機組框架5之上。基底7藉由粗動的工作件台4依次步進到各曝光場,光罩9在基底7步進到指定曝光區域附近時,藉由微動的光罩台2動態跟蹤工作件台的振動,在動態跟蹤的同時進行曝光。其中工作件台4和光罩台2位置資訊藉由位置測量系統3測量。 Please refer to FIG. 1. FIG. 1 is a schematic structural view of a stepping photoetching apparatus of the present invention. As shown in FIG. 1, the stepping photoetching apparatus comprises an illumination system 1, a Mask Plate 2, a mask 9 placed on the mask table 2, a projection objective 6, a workpiece table 4 and The substrate 7 placed above the workpiece table 4, as well as the integral frame 5 and the position measuring system 3. In the embodiment of the device, the illumination system 1 is illuminated by mercury lamps, providing i-line or gh line or ghi line exposure to form conventional illumination. The projection objective lens 6 adopts a 1:M (M>1) reduced objective lens. Jiadi uses a 1:5 reduced objective lens. In the present invention, the table 4 is of a coarse motion structure and placed between the entire unit frame 5. The reticle stage 2 is of a micro-motion structure and placed over the entire unit frame 5. The substrate 7 is sequentially stepped to each exposure field by the coarse working table 4, and the mask 9 dynamically tracks the vibration of the workpiece table by the fretting reticle stage 2 when the substrate 7 is stepped to the vicinity of the designated exposure area. Exposure is performed while dynamic tracking. The position information of the workpiece table 4 and the reticle stage 2 is measured by the position measuring system 3.

本發明所涉及的步進光蝕刻設備在工作時,工作件台4粗動到曝光區域附近時,含微動結構的光罩台2立即動態跟蹤工作件台4位置,由於在小範圍內的高頻跟蹤類似於掃描光蝕刻機,此時可以同時曝光,因此,採用本裝置與方法不需要像傳統步進光蝕刻機結構那樣,光罩台不動,而工作件台步進必須位置穩定到指定精度內才可以曝光。 When the stepping light etching apparatus according to the present invention is in operation, when the workpiece table 4 is coarsely moved to the vicinity of the exposure area, the mask stage 2 including the micro-motion structure immediately dynamically tracks the position of the workpiece table 4, because it is high in a small range. The frequency tracking is similar to the scanning photoetching machine, and can be exposed at the same time. Therefore, the device and the method do not need to be fixed like the conventional stepping photoetching machine structure, and the working table step must be stable to the specified position. Only within the precision can be exposed.

工作件台4的詳細結構請參見圖2和圖3,其中圖2是步進光蝕刻設備的工作件台的俯視圖,圖3是工作件台的側視圖。工作件台4是一個六維自由度運動機構,即工作件台可以滿足X、Y、Z、Rx、Ry、Rz六個方向的運動。其中,水平方向採用H型架構直驅結構來控制X、Y軸長行程運動,Rz軸根據H型的相容型介面來設計,水平三軸測量採用干涉儀測量來進行控制。垂直方向採用凸輪機構46實現Z、Rx、Ry軸的運動控制,採用編碼器測量。 For a detailed structure of the workpiece table 4, please refer to FIG. 2 and FIG. 3, wherein FIG. 2 is a plan view of the workpiece table of the stepping photoetching apparatus, and FIG. 3 is a side view of the workpiece table. The workpiece table 4 is a six-dimensional degree of freedom motion mechanism, that is, the workpiece table can satisfy the movements of six directions of X, Y, Z, Rx, Ry, and Rz. Among them, the horizontal direction adopts the H-frame direct drive structure to control the long stroke motion of the X and Y axes, the Rz axis is designed according to the H-type compatible interface, and the horizontal three-axis measurement is controlled by the interferometer measurement. The cam mechanism 46 is used to realize the motion control of the Z, Rx, and Ry axes in the vertical direction, and is measured by an encoder.

工作件台4水平方向架構採用H型的驅動方案包括X驅 動方向和Y驅動方向。X驅動方向包括兩個X向導軌41。兩個電機磁鐵定子43和導軌41裝配體安裝於工作件台支撐框架上,X電機轉子402a和402b與Y向橫樑導軌固定連接,提供X向和Rz向運動。Y向驅動包括一個Y向導軌45,Y向電機定子49安裝於Y向導軌45橫樑之上,轉子安裝於曝光台框架上。導軌45的橫樑中間採用躺式直線電機。H型滑塊採用雙導軌氣浮導向,左側導軌41為平導軌,與水平X電機轉子402a之間配置2個垂直方向氣浮墊A51(真空預緊),只提供垂直方向支撐和導向,水平方向為自由。右側導軌41為二維導軌,與水平X電機轉子402b之間配置2個垂直方向氣浮墊A52(真空預緊),約束Y向和Z向。Y向運動滑塊可採用U型高剛性氣浮滑塊,Y向導軌45左右兩側各兩個氣浮墊,互為預緊,垂直方向採用高剛度氣足401(真空預緊)。本發明同時提供了工作件台4的第二技術方案,即將右側導軌採用矽鋼導軌,採用磁預緊,採用2個垂直方向氣浮滑塊和2個Rz側向氣浮墊A53。Rz側向氣浮墊A53與Y向導軌之間可採用柔性塊連接。橫樑Y導軌兩側各2個X向氣浮墊,抵抗Y向運動的衝擊力和Rz的轉矩,壓縮氣體互為預緊。微動框架底部採用高剛度氣足401設計,由大理石台作為導向平面,總計可用到12個氣浮墊和1個氣足。 Workpiece table 4 horizontal direction architecture adopts H-type drive scheme including X-drive Direction of movement and direction of Y drive. The X drive direction includes two X-direction guide rails 41. The two motor magnet stators 43 and the guide rail 41 assembly are mounted on the work piece table support frame, and the X motor rotors 402a and 402b are fixedly coupled to the Y-beam guide rails to provide X-direction and Rz-direction movement. The Y-direction drive includes a Y-direction guide rail 45, and the Y-direction motor stator 49 is mounted on the Y-direction guide rail 45, and the rotor is mounted on the exposure stage frame. A reclining linear motor is used in the middle of the cross member of the guide rail 45. The H-shaped slider adopts double-rail air-floating guide, the left guide rail 41 is a flat guide rail, and two vertical air-floating pads A51 (vacuum pre-tightening) are arranged between the horizontal X-motor rotor 402a, and only vertical direction support and guidance are provided, and the level is horizontal. The direction is freedom. The right side rail 41 is a two-dimensional rail, and two vertical air floating cushions A52 (vacuum preloading) are disposed between the horizontal X motor rotor 402b, and the Y direction and the Z direction are constrained. The Y-direction motion slider can adopt U-shaped high-rigidity air-floating slider, and the two air-floating pads on the left and right sides of the Y-direction guide rail 45 are mutually pre-tightened, and the vertical direction adopts a high-stiffness air foot 401 (vacuum pre-tightening). The invention simultaneously provides a second technical solution of the work piece table 4, that is, the right side guide rail adopts a steel guide rail, adopts magnetic pre-tightening, adopts two vertical direction air floating sliders and two Rz lateral air floating cushions A53. A flexible block connection may be employed between the Rz lateral air bearing pad A53 and the Y-direction rail. Two X-direction air floating mats on both sides of the beam Y rail, resisting the impact force of the Y-direction motion and the torque of the Rz, the compressed gas is pre-tightened with each other. The bottom of the fretting frame is designed with high rigidity and air foot 401. The marble table is used as the guiding plane. A total of 12 air floating cushions and one air foot can be used.

工作件台4的垂直方向運動機構除了音圈電機(Voice Coil Motor,VCM)直接驅動方案,還採用傳統的凸輪機構46來驅動。 The vertical movement mechanism of the workpiece table 4 is in addition to the voice coil motor (Voice Coil) The Motor, VCM) direct drive solution is also driven by a conventional cam mechanism 46.

光罩台2的詳細結構請參見圖4和圖5,其中圖4是步進光蝕刻設備的光罩台的俯視圖,圖5是光罩台的側視圖。光罩台2的水平微動電機採用了三個洛倫茲(Lorentz)電機驅動,包括用於提供X方向的洛倫茲電機SSZX,用於提供Y方向的洛倫茲電機SSY1和SSY2。光罩台4的下表面採用氣浮導向設計,由大理石26作平面導向。光罩台2安裝X、Y向兩塊平面反射鏡22、21,相容支持5吋、6吋光罩。光罩台2無工位切換機構,提供光罩版交接介面,上版精度由微動音圈電機實現X、Y、Rz三維自由度的精度指標和行程補償。光罩版藉由真空被吸附在吸版台25上,吸版台25採用凸台設計。光罩台2的垂直方向執行器23採用簧片機構:採用三個垂直方向支撐簧片來連接大理石26和光罩台框架,具有垂直方向高剛度,水平低剛度。簧片與大理石26之間有柔性鉸鏈,解開Rx和Ry向的耦合。 4 and 5, wherein FIG. 4 is a plan view of the reticle stage of the step-and-step photo-etching apparatus, and FIG. 5 is a side view of the reticle stage. The horizontal micro-motor of the reticle stage 2 is driven by three Lorentz motors, including the Lorentz motor SSZX for providing the X direction, and the Lorentz motors SSY1 and SSY2 for the Y direction. The lower surface of the reticle stage 4 is designed with an air-floating guide and is guided by the marble 26 in a plane. The mask table 2 is mounted with two plane mirrors 22 and 21 in the X and Y directions, and is compatible with the 5 吋 and 6 吋 hoods. The reticle stage 2 has no station switching mechanism, and provides a reticle plate interface. The precision of the upper plate is realized by the micro-motion voice coil motor to achieve the accuracy index and stroke compensation of the three-dimensional degrees of freedom of X, Y and Rz. The mask plate is adsorbed on the platen table 25 by a vacuum, and the platen table 25 is designed with a boss. The vertical direction actuator 23 of the reticle stage 2 employs a reed mechanism: three vertical directional support springs are used to connect the marble 26 and the reticle stage frame, with high vertical stiffness and low horizontal stiffness. There is a flexible hinge between the reed and the marble 26 to uncoupling the coupling of the Rx and Ry directions.

本裝置實施例中,所採用的位置測量系統如圖6,水平方向XYRz等採用雷射干涉儀測量,而Z向採用內置的編碼尺測量。除了光罩台2上設置X向平面反射鏡22、Y向平面反射鏡21外,工作件台4上同樣設置了X向平面反射鏡42、Y向平面反射鏡44。平面反射鏡反射雷射干涉儀出射的雷射,用於水平方向XYRz的測量。 In the embodiment of the device, the position measuring system used is as shown in FIG. 6, the horizontal direction XYRz and the like are measured by a laser interferometer, and the Z direction is measured by a built-in code ruler. In addition to the X-direction plane mirror 22 and the Y-direction plane mirror 21 disposed on the mask stage 2, an X-direction plane mirror 42 and a Y-direction plane mirror 44 are also disposed on the workpiece stage 4. The plane mirror reflects the laser emitted by the laser interferometer for measurement in the horizontal direction XYRz.

使用本發明所公開的步進光蝕刻設備的工作程序要點是:工作件台藉由粗動台依次步進到各曝光場,光罩台在工作件台步進到指定曝光區域附近時,藉由光罩台的微動結構動態跟蹤工作件台的振動,在動態跟蹤的同時進行曝光。如圖7中所示,圖7是該光蝕刻曝光方法的流程圖。在進行光蝕刻曝光之前,首先完成S1曝光前的準備工作,曝光前的準備工作具體包括放置光罩S11,晶放置片S12,對晶片實現全場對準S13。完成曝光前的準備工作S1後,進入第一次步進曝光S2,具體包括將工作件台步進到第一個曝光場位置處S21,然後光罩台動態跟蹤工作件台微小位置的變化S22。在第一次步進曝光S2時,光罩台同步跟蹤工作件台的運動,在動態跟蹤的同時進行曝光。需要說明的是,S22中的曝光並不能實現一個完整圖形的曝光,因此還需要執行曝光步驟S3。當步驟S2完成時,曝光S3同時完成,由步驟S2、S3共同完成一個完整圖形的曝光。然後進行下一次(此處為第二次)步進曝光S4,第二次步進曝光S4的步驟和第一次步進曝光S2完全一致,包括將工作件台步進到下一個(即第二個)曝光場位置處S41,然後光罩台動態跟蹤工作件台微小位置的變化S42。完成曝光S5後,判斷是否全部曝光場被曝光S6,如果判斷結果係否,則重新進入步驟S4,如果判斷結果係是,則光蝕刻曝光結束,取出晶片或更換晶片S7。本實施例的一個較佳技術方案為光罩台只跟蹤工作 件台的XY和Rz,這樣是為了進一步降低系統的複雜性。 The working procedure of the stepping light etching apparatus disclosed by the present invention is that the workpiece stage is sequentially stepped to each exposure field by the coarse movement stage, and the mask stage is borrowed when the workpiece stage steps to the vicinity of the designated exposure area. The vibration of the workpiece table is dynamically tracked by the fretting structure of the reticle stage, and exposure is performed while the dynamic tracking is being performed. As shown in FIG. 7, FIG. 7 is a flow chart of the photoetching exposure method. Before the photoetching exposure is performed, the preparation work before the S1 exposure is first completed, and the preparation work before the exposure specifically includes placing the photomask S11, placing the wafer S12, and achieving full field alignment S13 on the wafer. After the preparation work S1 before the exposure is completed, the first step exposure S2 is entered, specifically including stepping the work piece table to the first exposure field position S21, and then the reticle stage dynamically tracks the change of the small position of the work piece table S22 . At the first step exposure S2, the reticle stage tracks the movement of the workpiece table synchronously, and performs exposure while dynamic tracking. It should be noted that the exposure in S22 does not achieve exposure of a complete pattern, so it is also necessary to perform the exposure step S3. When the step S2 is completed, the exposure S3 is simultaneously completed, and the exposure of a complete pattern is completed by the steps S2 and S3. Then proceed to the next (here, second) step exposure S4, the second step exposure S4 step is exactly the same as the first step exposure S2, including stepping the workpiece stage to the next one (ie the first Two) the exposure field position is S41, and then the reticle stage dynamically tracks the change S42 of the small position of the workpiece stage. After the exposure S5 is completed, it is judged whether or not all the exposure fields are exposed to S6. If the result of the determination is negative, the process proceeds to step S4. If the result of the determination is YES, the photoetching exposure is completed, and the wafer is taken out or the wafer S7 is replaced. A preferred technical solution of the embodiment is that the photomask table only tracks the work. The XY and Rz of the table are designed to further reduce the complexity of the system.

本發明所定義的工作件台和光罩台都是可在曝光的同時同步運動,上述粗動結構和微動結構的主要區別包括:其一,前者的XY向的行程比較大,比如都大於30mm,而後者的行程比較小,比如小於30mm;其二,前者的定位精度(在晶片面或在晶片面投影)一般比後者低。 The working piece table and the reticle stage defined by the invention can be synchronously moved while being exposed. The main differences between the coarse moving structure and the micro-motion structure include: First, the XY direction of the former is relatively large, for example, both are larger than 30 mm. The latter's stroke is relatively small, such as less than 30mm; second, the former's positioning accuracy (projected on the wafer surface or on the wafer surface) is generally lower than the latter.

本發明裝置和傳統的步進光蝕刻機相比較而所不同的是,傳統光蝕刻機的光罩台不存在曝光同時可動態運動的微動結構,而是簡單的鎖進結構或其它靜態結構;此外,傳統光蝕刻機的工作件台一般包含粗動台和微動台(或XY台與旋轉台,只有極少數為只用H型的粗動結構)。 The difference between the device of the present invention and the conventional stepper photoetching machine is that the reticle stage of the conventional photoetching machine does not have a micro-motion structure that is exposed while being dynamically movable, but a simple locking structure or other static structure; In addition, the working piece table of the conventional photoetching machine generally includes a coarse moving table and a micro-motion table (or an XY table and a rotating table, and only a few are coarse structures with only H-type).

此外,本發明方法和傳統步進機的顯著不同是,本發明在曝光的同時,光罩台同步跟蹤工作件台的運動。而傳統步進光蝕刻機的光罩台是不跟蹤工作件台運動的。 Moreover, a significant difference between the method of the present invention and a conventional stepper is that the present invention simultaneously tracks the movement of the workpiece table while the exposure is being performed. The reticle stage of the conventional stepper photoetching machine does not track the movement of the workpiece table.

因為本發明工作件台只有粗動結構,所以本發明工作件台方案比傳統工作件台採用的粗動台加微動台結構(或XY台加Rz台)更簡單;同時,因為物鏡為1:5縮減式物鏡,所以光罩台水準XY向誤差比在工作件台的精度要求放鬆了5倍,而垂直方向Z向的定位誤差被放鬆到25倍,因此本裝置中光罩台和工作件台組成的系統比傳統工作件台採用粗動+微動結構而光罩台曝光時固定的結構更為簡單。也就是說,本方案將傳統步進光蝕刻機的工作件台的微動台轉移到 光罩台上,整台機組的難度被大幅度降低。 Because the working piece table of the present invention has only a coarse moving structure, the working piece table solution of the present invention is simpler than the coarse moving table plus micro-motion table structure (or XY stage plus Rz stage) adopted by the conventional working piece table; meanwhile, since the objective lens is 1: 5 reduced objective lens, so the yoke table level XY error ratio is relaxed by 5 times in the precision of the workpiece table, and the vertical Z direction positioning error is relaxed to 25 times, so the mask table and the workpiece in the device The system consisting of a table is simpler than the conventional work piece table with a coarse motion + micro-motion structure and a fixed structure when the reticle stage is exposed. That is to say, this scheme transfers the micro-motion stage of the working piece table of the conventional stepping photoetching machine to On the reticle stage, the difficulty of the entire unit was greatly reduced.

採用本發明裝置工作時候,可以和傳統步進光蝕刻機不一樣,即在工作件台粗動到曝光區域的時候,光罩台藉由微動結構動態跟蹤工作件台的位置,不需要工作件台的位置完全穩定即可曝光,因此全晶片的曝光總時間變少,產率變高。 When the device of the present invention is used, it can be different from the conventional stepper photoetching machine, that is, when the workpiece table is coarsely moved to the exposure area, the mask table dynamically tracks the position of the workpiece table by the micro-motion structure, and does not require the working piece. The position of the stage is completely stable and can be exposed, so that the total exposure time of the whole wafer is reduced, and the yield is high.

本說明書中上述的只是本發明的較佳具體實施例,以上實施例僅用以說明本發明的技術方案而非對本發明的限制。凡本領域技術人員依本發明的構思藉由邏輯分析、推理或者有限的實驗可以得到的技術方案,皆應在本發明的範圍之內。 The above description of the present invention is only a preferred embodiment of the present invention, and the above embodiments are merely illustrative of the technical solutions of the present invention and are not intended to limit the present invention. Any technical solution that can be obtained by a person skilled in the art according to the idea of the present invention by logic analysis, reasoning or limited experimentation should be within the scope of the present invention.

1‧‧‧照明系統 1‧‧‧Lighting system

2‧‧‧光罩台 2‧‧‧mask table

3‧‧‧位置測量系統 3‧‧‧Location Measurement System

4‧‧‧工作件台 4‧‧‧Workpieces

5‧‧‧框架 5‧‧‧Frame

6‧‧‧投影物鏡 6‧‧‧Projection objective

7‧‧‧基底 7‧‧‧Base

9‧‧‧光罩 9‧‧‧Photomask

21‧‧‧平面反射鏡 21‧‧‧planar mirror

22‧‧‧平面反射鏡 22‧‧‧planar mirror

23‧‧‧垂直方向執行器 23‧‧‧Vertical actuator

25‧‧‧吸版台 25‧‧‧Staining table

26‧‧‧大理石 26‧‧‧ marble

41‧‧‧導軌 41‧‧‧rails

42‧‧‧平面反射鏡 42‧‧‧planar mirror

43‧‧‧電機磁鐵定子 43‧‧‧Motor magnet stator

44‧‧‧平面反射鏡 44‧‧‧planar mirror

45‧‧‧導軌 45‧‧‧rails

46‧‧‧凸輪機構 46‧‧‧Cam mechanism

49‧‧‧Y向電機定子 49‧‧‧Y-motor stator

401‧‧‧氣足 401‧‧‧ Air foot

402a‧‧‧X電機轉子 402a‧‧‧X motor rotor

420b‧‧‧X電機轉子 420b‧‧‧X motor rotor

A51‧‧‧氣浮墊 A51‧‧‧Air cushion

A52‧‧‧氣浮墊 A52‧‧‧Air cushion

A53‧‧‧氣浮墊 A53‧‧‧ air floating cushion

SSY1‧‧‧洛倫茲電機 SSY1‧‧ Lorentz motor

SSY2‧‧‧洛倫茲電機 SSY2‧‧ Lorentz motor

SSZX‧‧‧洛倫茲電機 SSZX‧‧ Lorentz motor

關於本發明的優點與精神可以通過以下的發明詳述及所附圖式得到進一步的瞭解。 The advantages and spirit of the present invention will be further understood from the following detailed description of the invention.

圖1是本發明的步進光蝕刻設備的結構示意圖;圖2是步進光蝕刻設備的工作件台的俯視圖;圖3是步進光蝕刻設備的工作件台的側視圖;圖4是步進光蝕刻設備的光罩台的俯視圖;圖5是步進光蝕刻設備的光罩台的側視圖;圖6是步進光蝕刻設備的位置測量系統的結構示意圖;圖7是該光蝕刻曝光方法的流程圖。 1 is a schematic structural view of a step-light etching apparatus of the present invention; FIG. 2 is a plan view of a workpiece stage of a step-light etching apparatus; FIG. 3 is a side view of a workpiece stage of a step-light etching apparatus; FIG. 5 is a side view of a photomask table of a stepping photoetching apparatus; FIG. 6 is a schematic structural view of a position measuring system of a stepping photoetching apparatus; FIG. 7 is a photoetching exposure Flow chart of the method.

1‧‧‧照明系統 1‧‧‧Lighting system

2‧‧‧光罩台 2‧‧‧mask table

3‧‧‧位置測量系統 3‧‧‧Location Measurement System

4‧‧‧工作件台 4‧‧‧Workpieces

5‧‧‧框架 5‧‧‧Frame

6‧‧‧投影物鏡 6‧‧‧Projection objective

7‧‧‧基底 7‧‧‧Base

9‧‧‧光罩 9‧‧‧Photomask

Claims (10)

一種步進光蝕刻設備,包括:一照明單元,用於提供曝光光束;一工作件台,用於支撐一基底在大行程範圍內進行X、Y、Z、Rx、Ry、Rz六維自由度運動;一光罩台,用於支撐一光罩進行X、Y、Z、Rx、Ry、Rz六維自由度運動;一投影物鏡,用於將光罩上圖形按預定比例投射至上述基底;其中,當上述工作件台步進至曝光場後,上述光罩台在小行程範圍內相對上述工作件台同步運動並同時曝光。 A stepping photoetching apparatus comprising: an illumination unit for providing an exposure beam; and a workpiece stage for supporting a substrate to perform six-dimensional degrees of freedom of X, Y, Z, Rx, Ry, and Rz over a large stroke range Movement; a reticle stage for supporting a reticle for X, Y, Z, Rx, Ry, Rz six-dimensional degrees of freedom motion; a projection objective for projecting the reticle pattern onto the substrate at a predetermined ratio; Wherein, after the working piece table is stepped to the exposure field, the reticle stage moves synchronously with respect to the working piece table in a small stroke range and simultaneously exposes. 如申請專利範圍第1項之步進光蝕刻設備,其中,上述投影物鏡的投影倍率為1:5。 The stepper photoetching apparatus of claim 1, wherein the projection objective has a projection magnification of 1:5. 如申請專利範圍第1項之步進光蝕刻設備,其中,上述步進光蝕刻設備還包括一位置測量系統,用於分別對上述工作件台和光罩台進行位置測量和運動控制。 The stepper photoetching apparatus of claim 1, wherein the stepping photoetching apparatus further comprises a position measuring system for performing position measurement and motion control on the workpiece table and the mask table, respectively. 如申請專利範圍第1項之步進光蝕刻設備,其中,上述工作件台僅包括粗動結構,上述光罩台包括微動結構。 The stepper photoetching apparatus of claim 1, wherein the workpiece stage comprises only a coarse motion structure, and the mask stage comprises a micro-motion structure. 如申請專利範圍第4項之步進光蝕刻設備,其中,上述工作件台的水平方向運動裝置為H型結構,垂直方向運動裝置為音圈電機或凸輪機構。 The stepper photoetching apparatus of claim 4, wherein the horizontal moving device of the working piece table is an H-shaped structure, and the vertical moving device is a voice coil motor or a cam mechanism. 如申請專利範圍第4項之步進光蝕刻設備,其中,上述 光罩台的水平方向運動裝置為洛侖茲電機,垂直方向運動裝置為簧片機構。 A stepper photoetching apparatus according to item 4 of the patent application, wherein the above The horizontal movement device of the reticle stage is a Lorentz motor, and the vertical direction movement device is a reed mechanism. 如申請專利範圍第3項之步進光蝕刻設備,其中,上述位置測量系統採用雷射干涉儀或編碼尺。 The stepper photoetching apparatus of claim 3, wherein the position measuring system uses a laser interferometer or a coder. 如申請專利範圍第1項之步進光蝕刻設備,其中,當上述工作件台步進至曝光場後,上述光罩台在小行程範圍內相對上述工作件台同步運動至上述工作件台對應的X、Y和Rz位置。 The stepping photo-etching apparatus of claim 1, wherein, after the step of the working piece is stepped to an exposure field, the reticle stage moves synchronously with respect to the working piece stage to the working piece table in a small stroke range The X, Y, and Rz positions. 一種使用申請專利範圍第1至8項中任一項之步進光蝕刻設備的光蝕刻曝光方法,其方法包括:步驟一、進行曝光前準備工作;步驟二、工作件台步進至第一曝光場後,光罩台同步運動至上述工作件台對應的位置並同時曝光;步驟三、判斷是否已經完成全部曝光場的曝光,如果判斷結果係「否」,則上述工作件台步進至下一曝光場後,上述光罩台同步運動至上述工作件台對應的位置並同時曝光,返回步驟三;如果判斷結果係「是」,則曝光結束。 A photoetching exposure method using a stepping photo-etching apparatus according to any one of claims 1 to 8, wherein the method comprises: step one, performing pre-exposure preparation work; step two, stepping the work piece to the first step After the exposure field, the reticle stage is synchronously moved to the corresponding position of the workpiece table and exposed at the same time; step 3, judging whether the exposure of all the exposure fields has been completed, and if the determination result is “No”, the workpiece table is stepped to After the next exposure field, the reticle stage is synchronously moved to the corresponding position of the workpiece table and simultaneously exposed, and returns to step 3; if the result of the determination is YES, the exposure ends. 如申請專利範圍第9項之光蝕刻曝光方法,其中,上述步驟一包括放置光罩,放置基底,對上述基底實現全場對準。 The photoetching exposure method of claim 9, wherein the step 1 comprises placing a photomask, placing the substrate, and achieving full field alignment on the substrate.
TW101130476A 2011-08-22 2012-08-22 Step photolithography device and photolithography exposure method TW201316133A (en)

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