TW201308685A - LED package - Google Patents

Abstract

An LED package includes a number of electrodes, an LED chip and a package layer. A clearance is defined between two adjacent electrodes. The LED chip is electrically connected to the electrodes. The package layer encapsulats the LED chip therein. An inclined surface is formed on one side of each of the electrodes which is adjacent to a corresponding clearance. Each of the inclined surface extends from one end of the electrode which is adjacent to the package layer downwardly towards to an interior of the clearance, such that light incident on the inclined surface is reflected by the inclined surface towards the package layer.

Description

Light emitting diode package structure

The present invention relates to semiconductor structures, and more particularly to a light emitting diode package structure.

At present, a Light Emitting Diode (LED) package structure generally includes a plurality of electrodes, and adjacent electrodes are spaced apart by a certain distance to form a gap and are insulated from each other. However, in the light-emitting diode package structure, due to the existence of the gap, a part of the light emitted by the light-emitting diode is directed to the back surface of the light-emitting diode package structure by the gap, and cannot be all forwardly emitted. As a result, the light-emitting efficiency of the light-emitting diode package structure is lowered, which affects the light-emitting performance of the light-emitting diode package structure.

In view of this, it is necessary to provide a light emitting diode package structure having higher light extraction efficiency.

A light emitting diode package structure includes a plurality of electrodes, a light emitting diode chip and an encapsulation layer. The adjacent two electrodes are spaced apart from each other to form a gap. The LED chip is electrically connected to the electrode, and the encapsulation layer covers the LED chip inside the LED. Each of the electrodes is formed as a slope near the corresponding gap, and each slope extends obliquely downward from the end of the corresponding electrode near the encapsulation layer and into the gap, so that the light irradiated on the slope is reflected by the slope The encapsulation layer exits.

In the above-mentioned light emitting diode package structure, a slope close to the gap is formed between adjacent electrodes, so that part of the light emitted by the LED chip is emitted from the gap between the adjacent electrodes to the back surface of the LED package structure. When the light is mostly blocked by the slope and reflected, it is emitted forward to the front side of the LED package structure, thereby reducing the loss of light at the gap and increasing the forward light output, thereby improving the light emitting diode package structure. The light-emitting efficiency improves the light-emitting performance of the light-emitting diode package structure.

Referring to FIG. 1 , an embodiment of the present invention provides a light emitting diode package structure 10 including an electrode 11 , a light emitting diode chip 12 , a reflective cup 13 , an insulating layer 14 , and an encapsulation layer 15 .

The electrodes 11 are at least two, and the adjacent two electrodes 11 are spaced apart from each other to form a gap 16, and the electrodes 11 are electrically insulated from each other. Each of the electrodes 11 has a flat shape, and includes an upper surface 111, a lower surface 112 opposite to the upper surface 111 and parallel to each other, and a slope 113 connected between opposite ends of the upper surface 111 and the lower surface 112. The slope 113 is located near the gap 16 between the adjacent two electrodes 11. In this embodiment, the inclined surface 113 is a flat surface and is distributed in an inverted figure-eight shape on both sides of the gap 16. Each inclined surface 113 is downward from the upper surface 111 of the corresponding electrode 11 near the end of the gap 16 and toward the gap. The inner portion of the 16 is obliquely extended to correspond to the end of the lower surface 112 adjacent to the gap 16, such that the width of the gap 16 gradually decreases from the upper surface 111 to the lower surface 112 of the electrode along the extending direction of the slope 113. The formation of the inclined surface 113 can gradually reduce the width of the gap 16 in a direction away from the light emitted from the LED wafer 12, so that the light irradiated on the inclined surface 113 is reflected by the two inclined surfaces 113 to the encapsulation layer 15 The direction is emitted, thereby reducing the light rays from being emitted downward through the gap 16 to cause light loss and increase the forward light output. The material used for the electrode 11 is a metal material having good electrical conductivity and good reflection performance, such as an alloy of one or more of gold, silver, copper, platinum, aluminum, nickel, tin or magnesium.

A light emitting diode chip 12 is attached to the electrode 11. The LED chip 12 is electrically connected to the electrode 11 by a metal wire 121. It can be understood that the LED wafer 12 can also be fixed on the electrode 11 by means of flip chip and electrically connected to the electrode 11.

The reflector cup 13 surrounds the LED chip 12 and is disposed on a peripheral portion of the upper surface 111 of the electrode 11 for reflecting light emitted by the LED wafer 12. The reflector cup 13 can be made of a material such as PPA.

The insulating layer 14 is disposed between the two electrodes 11 to form a barrier between the two electrodes 11 to avoid electrical connection between the two electrodes 11. It can be understood that the insulating layer 14 may not be provided, and the gap 16 may be filled by the encapsulation layer 15.

The encapsulation layer 15 is filled in the reflective cup 13 to cover the LED body 12 and the metal wire 121 inside the reflective cup 13. The material of the encapsulation layer 15 may be silicone, epoxy resin or a combination of the two. The encapsulating layer 15 may further comprise a fluorescent conversion material, which may be garnet-based phosphor powder, citrate-based phosphor powder, orthosilicate-based phosphor powder, sulfide-based fluorescent material. Powder, thiogallate-based phosphor and nitride-based phosphor.

2 is a light emitting diode package structure 20 according to a second embodiment of the present invention, which is different from the light emitting diode package structure 10 provided by the first embodiment of the present invention in that the electrode 21 and the gap 26 are close to each other. The shape of the slope 213 is different. Each of the electrodes 21 includes a planar lower surface 212 and an upwardly convex curved upper surface 211 opposite the lower surface 212. The distance between the upper surface 211 and the lower surface 212 of the electrode 21 is from the electrode 21. The center of the portion gradually decreases toward the peripheral portion, that is, the thickness of the electrode 21 gradually decreases from the center to the peripheral portion of the electrode 21. The two inclined surfaces 213 are portions of the upper surface 211 near the gap 26 between the adjacent two electrodes 21, and the curved upper surface 211 of the adjacent electrode 21 gradually extends in the thickness direction of the electrode 21, thereby The width of the gap 26 can be gradually reduced along the light exiting direction of the light-emitting diode wafer 12 to reduce the loss of light emitted by the gap 26 and increase the forward light output.

The LED package structures 10 and 20 provided by the embodiments of the present invention form an inclined plane close to the gap 16 between the adjacent electrodes 11, and an inclined curved surface close to the gap 26 is formed between the adjacent electrodes 21, so that When a portion of the light emitted from the LED wafer 12 is emitted toward the back surface of the LED packages 10 and 20 by the gaps 16 and 26 between the adjacent electrodes 11 and 21, the portion of the light may be mostly inclined. Or the inclined arc surface blocks and reflects back to the front side of the LED packages 10 and 20, thereby reducing the loss of light at the gaps 16 and 26, and increasing the forward light output, thereby improving the LED package. The light-emitting efficiency of the structures 10 and 20 improves the light-emitting properties of the light-emitting diode packages 10 and 20.

In summary, the present invention complies with the requirements of the invention patent and submits a patent application according to law. The above description is only the preferred embodiment of the present invention, and equivalent modifications or variations made by those skilled in the art will be included in the following claims.

10,20. . . Light emitting diode package structure

11,21. . . electrode

111,211. . . Upper surface

112,212. . . lower surface

113,213. . . Bevel

12. . . Light-emitting diode chip

121. . . Metal wire

13. . . Reflective cup

14. . . Insulation

15. . . Encapsulation layer

16,26. . . gap

FIG. 1 is a schematic diagram of a light emitting diode package structure according to a first embodiment of the present invention.

2 is a schematic diagram of a light emitting diode package structure according to a second embodiment of the present invention.

10. . . Light emitting diode package structure

11. . . electrode

111. . . Upper surface

112. . . lower surface

113. . . Bevel

12. . . Light-emitting diode chip

121. . . Metal wire

13. . . Reflective cup

14. . . Insulation

15. . . Encapsulation layer

16. . . gap

Claims (10)

A light emitting diode package structure comprising a plurality of electrodes, a light emitting diode chip and an encapsulation layer, wherein two adjacent electrodes are spaced apart from each other to form a gap, and the LED body is electrically connected to the electrode The encapsulation layer encapsulates the LED chip inside thereof, and the improvement is that each electrode is formed as a slope near the corresponding gap, and each slope is away from a side of the corresponding electrode near the encapsulation layer One side of the encapsulation layer extends obliquely in the gap, so that the light irradiated on the inclined surface is reflected by the slope and then emitted toward the encapsulation layer. The light emitting diode package structure according to claim 1, wherein the inclined surface is a flat surface. The light emitting diode package structure according to claim 2, wherein each of the electrodes has a flat shape, and each of the electrodes includes an upper surface and a lower surface opposite to the upper surface, the slope is connected to Between the upper surface and the lower surface. The light emitting diode package structure according to claim 1, wherein the inclined surface is a curved surface. The light emitting diode package structure of claim 4, wherein each of the electrodes comprises a planar lower surface and an arcuate upper surface opposite the lower surface, the slope being the electrode The upper surface is close to the portion of the gap. The light emitting diode package structure according to any one of claims 1 to 5, wherein the light emitting diode package structure further comprises a reflective cup surrounding the light emitting diode chip Provided on the electrode. The light emitting diode package structure according to any one of claims 1 to 5, further comprising an insulating layer disposed in a gap between adjacent electrodes between the electrodes A barrier is formed to avoid electrical connection between the electrodes. The light emitting diode package structure according to any one of claims 1 to 5, wherein the material used for the electrode is gold, silver, copper, platinum, aluminum, nickel, tin or magnesium. One or several alloys. The light emitting diode package structure according to claim 6, wherein the reflective cup is made of PPA. The light emitting diode package structure according to any one of claims 1 to 5, wherein the package layer further comprises a fluorescent conversion material, and the fluorescent conversion material is a garnet-based phosphor powder. , citrate-based phosphor powder, orthosilicate-based phosphor powder, sulfide-based phosphor powder, thiogallate-based phosphor powder or nitride-based phosphor powder.