TW201308532A - Laminated module and interposer used in same - Google Patents

Abstract

Provided is a laminated module that can suppress a temperature rise accompanying heat release by semiconductor devices, allowing stable operation, even in the case of a configuration laminating semiconductor devices having a large power consumption. The laminated module (40b) is provided with: an interposer (30a); at least one first semiconductor device (11b) disposed on one side of the interposer (30a); and at least one second semiconductor device (12b) disposed on the reverse side of the interposer (30a) from the first semiconductor device (11b). The interposer (30a) has: a main body having a channel (31) through which a fluid flows; and a heat reflection layer (61a) and/or a heat radiating layer (61b) disposed at a predetermined region of the inner wall of the main body demarcating the channel (31).

Description

Multilayer module and interposer used in it

The present invention relates to a laminated module in which a plurality of semiconductor elements are laminated in a plurality of layers (hereinafter also referred to as a laminated semiconductor device), and further relates to a laminated mode in which an operating temperature of a semiconductor element capable of suppressing a large power consumption is increased and stably operates. Groups and intermediaries used in them.

In recent years, the technology in the field of the semiconductor industry represented by 矽 has been greatly improved, and it has contributed significantly to the miniaturization, weight reduction, low price, and high functionality of machines and systems, regardless of industrial use or people's livelihood. On the other hand, the demand for semiconductor elements has not been stopped, and it is expected to be more integrated, higher in speed, and higher in height, and is expected to be miniaturized.

In response to such a request, there is a method of miniaturizing the size of a unit element (for example, a transistor) constituting a semiconductor element, and increasing the number of unit elements to be mounted. The advantage of this measure is an increase in the speed of operation (higher speed) associated with miniaturization, an increase in the function of high integration (or a reduction in the number of necessary semiconductor elements). However, with the increase in speed or high integration, the power consumption in the semiconductor element is increased, and the operation is unstable or the semiconductor element itself is damaged. In order to reduce these risks, it is necessary to have an exothermic technique (or cooling technique) of the semiconductor element.

A number of techniques have been previously developed to reduce the operating temperature of semiconductor components. For example, a semiconductor component of a large power is attached with a heat releasing fin (manufacturally made of an aluminum alloy), and the flow of air is blown to the fin to cool the semiconductor element. technology. This technology can be solved when the power consumption is low (for example, several watts). However, in the latest semiconductor devices, power consumption becomes larger, and sometimes it is as high as 100 watts or more in a CPU of a computer. Therefore, in such a semiconductor device that consumes a large amount of power, if the heat radiation is insufficient, there is a case where the temperature of the semiconductor element rises to cause thermal runaway or thermal destruction. Therefore, the upper limit of the operation of the semiconductor element can be said to be dominated by the heat release technology.

The "semiconductor module (layered semiconductor device)" in which a plurality of semiconductor elements are laminated is advantageous in that it is relatively easy to achieve high integration. With such a configuration, the power consumption of the semiconductor element disposed in the lower layer not only increases the temperature of the semiconductor element but also increases the temperature of the semiconductor element disposed in the upper layer. Therefore, when a semiconductor element whose characteristics are sensitive to the operating temperature is disposed on the upper layer of the laminated module, the operation of the laminated module as a whole may be unstable. Therefore, in the case of a semiconductor module, it is preferable to discharge heat from a semiconductor element that consumes a large amount of power to a semiconductor element located in a higher-level layer before being discharged to the outside of the build-up module, thereby avoiding generation between the stacked semiconductor elements. The structure of the heat transmission.

As a cooling technique of a stacked semiconductor element (semiconductor module), the structure shown in FIG. 31 has been proposed. This figure is shown in FIG. 1A of Patent Document 1.

In Fig. 31, the wafer stack 110 is composed of a laminate of three semiconductor wafers indicated by reference numerals 110a, 110b, and 110c. A plurality of channels 175 formed by etching are provided on the respective wafers 110a, 110b, 110c (the symbol 175 in Fig. 31 indicates the channel). Cooling of the wafer stack 110 is performed by flowing a fluid (refrigerant) into the channel 175. This fluid is formed in the accumulation The narrow channels 175 between the wafers 110a, 110b, 110c of the layers flow. Further, in the case where the wafers 110a, 110b, and 110c are composed of a semiconductor substrate, the thickness thereof is usually several hundred micrometers (μm) or less.

In the vertical direction of each of the semiconductor wafers 110a, 110b, and 110c, the wafers 110a, 110b, and 110c are connected to each other by a TSV [Through Silicon Via] indicated by reference numeral 123.

[Advanced technical literature]

[Patent Document 1] US Patent Application Publication No. 2009/031186

In the structure of the conventional laminated semiconductor device (layered module) shown in FIG. 31, the channel 175 is formed like "a plurality of pillars", and since the height is several hundred micrometers (μm) or less, There must be a large pressure to allow the fluid (refrigerant) to flow into the passage 175.

Further, although the flow direction of the fluid is indicated by a downward arrow and a rightward arrow located on the lower side of the symbol 111 of FIG. 31, the fluid flowing around the wafer stack 110 along the downward arrow flows not only along the rightward arrow but also on the wafer 110a. Within the channel 175 between 110b and 110c, it should also flow around the wafers 110a, 110b, 110c. As described above, considering that the height of the channel 175 is low and the periphery of the wafers 110a, 110b, 110c has a wide space, it is conceivable that it is difficult to allow fluid to flow only into the channel 175, and most of the fluid flows around the wafers 110a, 110b, 110c. Moreover, the shape of the channel 175 formed in the wafers 110a, 110b, 110c (the shape along the direction of fluid flow) depends on each wafer. 110a, 110b, 110c are all different, so it should be difficult to achieve uniform fluid flow in all of the channels 175 formed in each layer.

For the above reasons, it is understood that the sufficient cooling of the wafers 110a, 110b, and 110c (or the heat release from the wafers 110a, 110b, and 110c) is not always easy by the conventional structure of Fig. 31.

Furthermore, the power consumption of the wafer 110c disposed in the lower layer of the wafer stack 110 not only causes the temperature of the wafer 110c to rise, but also causes the temperature of the wafers 110a and 110b disposed above the upper layer to rise. It is preferable that not only the wafer stack 110 itself but also the heat of the wafer 110c in the lower layer is hardly transmitted to the wafers 110a and 110b of the upper layer. However, since it is difficult to achieve uniform fluid flow to the channels 175 formed in the respective layers, it is difficult to suppress heat conduction between the wafers 110a, 110b, 110c.

The present invention has been made in view of the above, and it is an object of the present invention to provide a laminated mold capable of stably operating in response to temperature rise due to heat generation of the semiconductor elements even in the case of a semiconductor element having a large power consumption. Groups and intermediaries used in them.

Another object of the present invention is to provide a laminated module capable of suppressing heat conduction between stacked semiconductor elements and suppressing an increase in temperature thereof, and an interposer used therefor.

Other objects of the present invention which are not explicitly described herein will be apparent from the following description and the accompanying drawings.

(1) The laminated module of the present invention, comprising: an interposer; One or more first semiconductor elements disposed on one side of the interposer; and one or more second semiconductor elements disposed on the opposite side of the interposer from the first semiconductor element; the interposer having fluid flow And a body of the channel and at least one of a heat radiation layer and a heat reflection layer disposed in a predetermined region of the inner wall of the channel.

Since the laminated module of the present invention has the above-described configuration, for example, heat generated from one or more of the first semiconductor elements is transmitted to one or more of the second semiconductor elements via the interposer, but the fluid is made by the fluid. Flowing through the aforementioned passage of the intermediate layer, the heat can be efficiently discharged to the outside by the aforementioned fluid. Further, since the interposer has the heat radiation layer or the heat reflection layer or both in a predetermined region that partitions the inner wall of the passage, the heat can be radiated from the heat radiation layer to the fluid, or The heat is reflected by the heat reflecting layer toward the first semiconductor element, and the heat is released more effectively.

Therefore, it is possible to prevent or reduce the heat transmitted from the first semiconductor element to the second semiconductor element. As a result, even if it has a laminated module in which a semiconductor element having a large power consumption is laminated, it is possible to suppress stable temperature rise due to temperature rise due to heat generation of the semiconductor elements.

Further, the intermediate layer between the first semiconductor element and the second semiconductor element is interposed between the first semiconductor element and the second semiconductor element in a predetermined region in which the inner wall of the channel is partitioned, and the heat radiation layer or the heat reflection layer or the intermediate layer is provided. because This can suppress the heat conduction between the semiconductor elements constituting the laminated module and suppress the temperature rise of the laminated module.

(2) In a preferred embodiment of the multilayer module of the present invention, the heat radiation layer of the interposer is disposed on a side of the first semiconductor element having a relatively large amount of heat generation.

(3) In another preferred embodiment of the laminated module of the present invention, the heat reflecting layer of the interposer is disposed on a side of the second semiconductor element having a relatively small amount of heat generation.

(4) In still another preferred embodiment of the laminated module of the present invention, the heat radiation layer of the interposer is disposed on a side of the first semiconductor element having a relatively large amount of heat generation, and the heat reflection layer is disposed on the interposer The side of the second semiconductor element having a relatively small amount of heat generation.

(5) The interposer of the present invention, comprising: a body having a passage through which a fluid flows; and at least one of a heat radiation layer and a heat reflection layer disposed in a predetermined region of the inner wall of the passage defining the passage.

Since the interposer of the present invention has the above-described configuration, the heat generated by the semiconductor element disposed in the vicinity of the interposer can be efficiently released to the outside by the fluid by flowing the fluid to the channel. Further, since the interposer has the heat radiation layer or the heat reflection layer or both in a predetermined region zoning the inner wall of the passage, the heat can be radiated from the heat radiation layer to the fluid, or The heat is reflected by the heat reflecting layer toward the semiconductor element, so that the heat release can be more effective.

Therefore, the aforementioned heat emitted from the aforementioned semiconductor element can be prevented or reduced It is transmitted to another semiconductor element disposed near the opposite side of the aforementioned interposer. As a result, even if it has a laminated module in which a semiconductor element having a large power consumption is laminated, it is possible to suppress stable temperature rise due to temperature rise due to heat generation of the semiconductor elements.

Further, since the predetermined region of the inner wall of the channel is provided with the heat radiation layer or the heat reflection layer or both, by interposing the interposer, it is possible to suppress the semiconductor elements constituting the laminate module. The heat conduction suppresses the temperature rise of the laminated module.

(6) In a preferred embodiment of the interposer of the present invention, the heat radiation layer is disposed on the side of the semiconductor element having a relatively large amount of heat generation, and the heat reflection layer is disposed on the side of the semiconductor element having a relatively small amount of heat generation.

(7) In this manual, the terms used are defined as follows.

‧Substrate: The structure or material is arbitrary as long as it has a substrate capable of supporting the rigidity of the laminated module.

‧Semiconductor component: Refers to all semiconductor components including (i) and (ii) below.

(i) Semiconductor wafers (bare wafers) cut from semiconductor wafers at the end of the wafer process. The semiconductor wafer includes a wafer of a so-called integrated circuit in which at least one semiconductor element such as a transistor or a diode is disposed.

(ii) The above-described semiconductor wafer that has been packaged. A package called a ball grid array (BGA), a chip size package (CSP), or the like is packaged in various packages.

‧Electronic components: Also known as passive component parts, including resistors, capacitors, inductors (coils), etc. There is also a combination of a single component (individual components) (for example, a module resistor). Also, sensors with specific functions or Actuators are also included in electronic components. Further, the aforementioned sensor or the actuator including the signal processing circuit, the drive circuit, and the like is also included in the electronic component.

‧ Semiconductor module: A structure having two or more semiconductor elements stacked in layers. Although the methods of interconnecting the layers constituting the laminated structure include wire bonding and through electrodes (TSV), the method is not limited. For example, in the case where the interposer, one or more first semiconductor elements disposed on one side thereof, and one or more second semiconductor elements disposed on the opposite side of the interposer are configured, the three-phase configuration is Multilayer module." In the case where there are more semiconductor elements stacked, it is a "multi-segment laminated module".

‧Construction structure: A structure including the substrate and the above-described laminated module mounted thereon. However, a cover or the like mounted on the substrate may be included.

‧ Interposer: disposed between the first semiconductor element and the second semiconductor element, and having a channel penetrating (extending) from one end to the other end. Electrical connection points are formed on the surface and the back surface of the interposer. Further, a wiring pattern called a "rewiring layer" may be provided on the back surface of the interposer. Further, in the above-described laminated module, a "wiring substrate" for "forming an electrical conduction circuit between semiconductor elements arranged up and down" may be inserted between semiconductor elements constituting the laminated module. There is also a situation called "intermediary layer". However, in this specification, the "wiring board" is not included in the "interposer".

‧ Fluid: A gas or liquid that has the effect of absorbing heat by heat transfer to dissipate heat or heat. Fluids with this function are also referred to as "refrigerants". As a specific example, there are (i) chlorofluorocarbons/non-chlorofluorocarbons (multiple use) Here, there are many types); (ii) butane, isobutane, etc. of an organic compound; (iii) hydrogen, hydrazine, ammonia, water, hydrogen dioxide, and the like of the inorganic compound.

(8) It is also possible to further provide a substrate on which the laminated module is mounted and a cover that is closely attached to the substrate so as to include the laminated module, and forms an internal space together with the substrate. In this case, it is preferable to provide a weir portion (separator member) disposed between the cover body and the substrate to partition the internal space. The shape of the cover body depends on the appearance of the aforementioned laminated module. Although it is preferably a substantially rectangular parallelepiped (including a substantially cubic shape), it is not limited thereto. The vertices of the cuboid and the intersection line (the line intersecting the face and the face) may also be smooth.

Regarding the position formed at the inlet and the outlet of the cover, it is necessary that the fluid flowing into the internal space from the inlet enters the outlet through the passage of the intermediate layer. That is, the inlet is disposed on the upstream side of the crotch portion, and the outlet is disposed on the downstream side of the crotch portion, in other words, the inlet must communicate with the upstream measurement space, and the outlet must communicate with the downstream side space. As long as this positional relationship is satisfied, there is no restriction on the position of the aforementioned inlet and the aforementioned outlet. For example, (a) the inlet may be disposed on a surface designated by the cover, and the outlet may be disposed on a surface of the cover opposite to the surface, and (b) the inlet and the outlet may be The two are disposed on the same surface (for example, the upper surface) of the cover, and (c) the inlet may be disposed on a designated surface of the cover, and the outlet may be disposed on the upper surface of the cover.

A metal, a resin, or the like can be used as the material of the cover. If it is desired to increase the cooling (heat release) effect, it is preferable to form the cover body with a metal material, but It is not limited to this. When the cover is formed of a resin material, in order to increase the cooling (heat release) effect, a metal layer may be provided on the front side or the back side, or the front side and the back side of the cover.

The cover body may also be formed in an integral structure and directly attached to the surface of the substrate. In order to adhere the cover to the surface of the substrate, an adhesive may be used (it is preferable that the gas generated during curing does not adversely affect the characteristics of the semiconductor element). Further, when the cover is made of a metal material, metal/metal bonding (for example, welding, welding, or the like) may be performed between the metal layer provided on the surface of the substrate, thereby adhering and fixing.

The cover body is composed of a plurality of constituent members, and the cover member may be formed by combining (assembling) the structural members. For example, the cover is formed by combining a "cover" (a flat plate shape) in which the inlet and the outlet are disposed, and a "frame" forming a side surface portion of the cover. In this configuration example, the lower surface of the frame is brought into close contact with the surface of the substrate, and the upper surface of the frame is brought into close contact with the underside of the cover. The material of the aforementioned frame may not be the same as the above-mentioned cover. For example, the cover is a metal material, and the frame is a combination of resin or glass.

It is preferable to use an adhesive (the gas generated during curing does not adversely affect the characteristics of the semiconductor element) by bonding the cover to the frame and by adhering the frame to the surface of the substrate. When both the cover and the frame are made of a metal material, metal/metal bonding (for example, welding, welding, etc.) may be performed. The cover is made of a metal (for example, aluminum), and when the frame is glass, electrostatic bonding (metal and glass bonding method) may be used. If the frame is a metal material, metal/metal bonding (for example, welding or soldering) may be performed between the metal layers provided on the surface of the substrate. In the foregoing box is glass, the aforementioned intermediary When the surface of the layer is metal (or a combination of the opposite), electrostatic bonding can also be used.

(9) The crotch portion is provided to prevent the fluid flowing into the internal space from the inlet from flowing into the passage and passing through the side surface (outer circumference) of the laminated module to the outlet, because the inlet is provided from the inlet If the inflowing fluid directly flows out of the outlet without passing through the passage, the desired cooling effect cannot be obtained. The crotch portion having such a function can (a) fix the cover body to the substrate in advance (a) at a position where the crotch portion of the cover body is to be placed, and (c) the gap from the gap. It is formed by a step of injecting a material (synthetic resin or the like) as the above-mentioned crotch portion. The synthetic resin used herein is preferably thermosetting, and the laminate module and the cover have high adhesion, and the thermal expansion coefficient thereof is close to the thermal expansion coefficient of the laminate module and the cover (preferably consistent). . However, it is not limited to this.

One of the fluids flowing into the internal space from the inlet enters the upstream space (the space formed on the inlet side between the laminated module and the cover and the crotch portion) by the presence of the crotch portion And the tendency to stagnate there. That is, in the upstream space, the fluid tends to be in a state of no flow. If such retention occurs, the heat release effect of the fluid described above is lowered. In order to prevent the decrease in the heat release effect, it is preferable that the entire amount of the fluid flows from the inlet to the outlet at any time. Therefore, since it is necessary to extend the crotch portion to the vicinity of the end portion of the inlet module side of the stacking module to reduce the volume of the upstream side space, for example, it is only necessary to increase the width of the crotch portion (along the flow of the fluid) The length of the direction) can be. Such a wide width portion can be easily realized by increasing the gap between the synthetic resin or the like into which the crotch portion is formed.

As described above, the width of the crotch portion is increased to reduce the volume of the upstream side space, and the "gap" is increased. In the formation of the crotch portion, the resin is injected from the gap provided in the cover, but when the resin is extruded from a syringe by air pressure or the like, the laminated mold is exposed in the gap. The outer surface of the group was coated with the aforementioned resin. However, the resin may not be completely coated on the surface other than the exposed laminated module. In other words, the resin may be applied only to the upstream end portion and the downstream end portion of the gap, and the resin may not be applied to the central portion of the gap (the portion between the upstream end portion and the downstream end portion). .

When the resin is applied only to the upstream end portion and the downstream end portion of the gap as described above, since the flow of the resin from the syringe is required to be thinned, a small diameter is used as the syringe. In this case, since the portion exposed to the outer surface of the laminated module remains after the application of the resin, heat is emitted from the exposed portion. From this, the exothermic heat is emitted directly from the gap of the cover to the outside, and the heat of the fluid is not used.

(10) For the above-mentioned crotch, a configuration in which the above-described configuration is further developed is also considered. For example, the heat radiation from the exposed portion of the outer surface of the laminated module is not formed by heat radiation, but can be formed by using a second fluid (a fluid different from the fluid for cooling through the passage). In this configuration, the second cover body is closely attached to the cover layer having the exposed portion (between the upstream end portion and the downstream end portion) on the outer surface and the cover body. Forming a second internal space with the substrate between the cover and the second cover on the substrate between. Next, the second fluid flows into the second internal space.

In this configuration, it is preferable that pressure is applied to the fluid supplied to the internal space so that the inflow of the fluid to the passage having a small cross-sectional area can be smoothly performed. On the other hand, the second liquid supplied to the second internal space does not need to be pressurized as described above. The reason for this is that it is not necessary to cause the aforementioned fluid to flow into the aforementioned passage having a small sectional area of the opening. Therefore, it is also possible to provide a single port in which the second fluid flows in and out (that is, functions as an inlet and an outlet) in the second cover, and is similar to a heat pump (not using a compressor) mounted on a notebook computer. The composition. As long as such a double cover is used, there is an advantage that the heat generated by the above-mentioned laminated module is higher.

(11) The interposer may have at least one of a heat reflecting layer and a heat radiating layer disposed in a predetermined region of the inner wall of the passage. For example, a heat radiation layer may be disposed in a first designated region of the inner wall of the passage of the interposer, and a heat reflective layer may be disposed in a second designated region of the inner wall. In this case, for example, a laminated structure including (a) an intermediate layer composed of at least two semiconductor elements and the semiconductor elements sandwiched between the semiconductor elements adjacent to each other; and (b) a substrate on which the laminated module is mounted, (c) a channel through which a fluid flows in the interposer, and (d) a heat radiation layer disposed in a first designated region of the inner wall of the channel. Or a structure comprising: (a) a build-up module comprising at least two semiconductor elements and an interposer sandwiched between the semiconductor elements vertically adjacent to each other; and (b) mounting the build-up layer a substrate of the module, (c) a channel for forming a fluid flow inside the interposer, and (d) a second designated region of the inner wall of the channel The domain is configured with a heat reflective layer.

The heat reflecting layer and the heat radiation layer may also cover the entire area of the inner wall, or may be disposed in a part. The heat reflecting layer and the heat radiation layer may be disposed in a predetermined region of the inner wall. For example, the first designated area of the inner wall may be the "top" of the channel, and the heat reflecting layer may be disposed on the top, and the second designated area of the inner wall may be the "bottom" of the channel. The heat radiation layer is disposed on the bottom, and the heat reflection layer and the heat radiation layer are not disposed on the "side wall" of the channel. Further, the peripheral portion of the "top" (the region close to the "side wall") may not be disposed, or the peripheral portion of the "bottom portion" (the region adjacent to the "side wall") may be used. The configuration of the aforementioned heat radiation layer is not disposed.

The "top" and "bottom" and "sidewall" constituting the passage may be made of the same material. For example, when all of these are formed by a single crystal enthalpy, an electronic circuit or an electric wiring layer can be easily formed on the front and back surfaces of the interposer or on the "top" or "bottom" by using a well-known integrated circuit fabrication technique. .

The "top" and "bottom" and "sidewall" constituting the aforementioned passages may also be made of different materials. For example, the "top" and the "bottom" are composed of a single crystal crucible, and the "side wall" is made of glass. In this configuration example, the single crystal ruthenium and the glass can be electrostatically bonded to each other to be airtight (the liquid does not leak) and strongly adhere to each other. Further, the "top" or "bottom" may be made of a resin material (for example, a material of a printed circuit board), and the "side wall" may be made of a resin material having high adhesion (for example, "SU-8" which is a photodiode material). In addition, "top" and "bottom" and "sidewall" are better. It is formed from a material with a high thermal conductivity, but this is not necessarily the case.

(12) An electronic circuit or an electric wiring layer may be disposed on the front surface and the back surface of the interposer (the surfaces facing the first and second semiconductor elements, respectively). Further, an electronic circuit or an electric wiring layer may be disposed on the inner wall of the passage ("top", "bottom" and "side wall"). In this case, in order to prevent the operation of the electronic circuit or the like (for example, short circuit of the electronic circuit), the heat reflecting layer and the heat radiation layer are required to be between the heat reflecting layer and the electronic circuit, and the heat radiation layer. An insulating layer is disposed between the electronic circuits and the like.

A through electrode may also be formed on the interposer. By forming the through electrode, the electrical signal from the second semiconductor element disposed above the interposer (opposite to the substrate) can be placed under the interposer (on the side of the substrate) of the first semiconductor The component, the substrate, and the like are conveyed.

There may be no "top" in the aforementioned passage. In this case, the opposing surface of the second semiconductor element disposed on the surface of the interposer (the surface opposite to the substrate) is the "top". Moreover, there is no "bottom" in the aforementioned passage. In this case, the opposing surface of the first semiconductor element disposed on the back surface (the surface on the substrate side) of the interposer is a "bottom". In these constitutional examples, the "top" or "bottom" of the interposer is capped on the front or back surface of the semiconductor element.

(13) The shape of the aforementioned passage has various modifications.

Preferably, the cross-sectional shape of the channel (the cross-sectional shape of the surface perpendicular to the flow direction of the fluid) is substantially rectangular (e.g., a rectangle having a large width direction and a small height direction). The aforementioned channels are parallel The shape in the plane of the substrate preferably includes a substantially square substantially rectangular shape, but is not limited thereto. For example, it is also possible to form a shape in which a fluid flows into the vicinity of the inlet (upstream side) where the passage flows in, and the vicinity of the outlet (downstream side) where the fluid flows out, or the vicinity of the inlet and the vicinity of the outlet is narrow. . That is, it is a shape in which "at least one end of the passage is thin and the center portion thereof is thick". Although the narrow region is formed by bending at least one of the side walls of the passage to the inside, the through electrode may be disposed at the meandering portion. The position where the inlet and the outlet are disposed is preferably the center in the width direction of the passage, but is not limited thereto. For example, the inlet may be disposed to the left in the width direction of the passage, and the outlet may be disposed to the right in the width direction of the passage.

(14) The first and second semiconductor elements sandwiching the interposer may be two or more. For example, a plurality of semiconductor elements may be disposed on the surface or the back surface of the interposer in the same plane.

It is also possible to use the above-described interposer to form the above-described laminated module as a semiconductor element including a plurality of segments. For example, the interposer may be mounted on the surface of the first semiconductor element, the second semiconductor element may be mounted on the surface of the interposer, and an additional interposer may be mounted on the surface of the second semiconductor element on the surface of the additional interposer. The third semiconductor element is mounted. In this case, the passage may be formed in the interposer and the additional interposer, respectively, or the passage may be formed only in the interposer or the additional interposer.

(15) The interposer may also have a cross-sectional area of the designated first region of the channel smaller than a cross-sectional area of the designated second region of the channel. This situation In the form, the first region having a relatively small cross-sectional area is located on the upstream side, and the second region having a relatively large cross-sectional area is located on the downstream side. In other embodiments, the first region is located near the inlet of the passage, and the second region is located near the outlet of the passage. More specifically, the first region is located on the upstream side (the side closer to the entrance of the aforementioned passage) than the second region. The cross-sectional area is the area of the cross section perpendicular to the flow direction of the fluid.

The first region of the passage is a region in which the fluid flows into the passage, and the second region is a region in which the fluid flows out from the passage. In this configuration, the fluid first flows into the first region having a small cross-sectional area, and flows out from the passage to be guided to the second region having a large cross-sectional area. As a result, "heat-dissipation expansion" occurs in the fluid, and an endothermic effect is generated. By the endothermic action, the heat generated by the first and second semiconductor elements disposed on both sides of the interposer is absorbed by the fluid, so that the operating temperatures of the first and second semiconductor elements can be lowered. The heat absorbed by the aforementioned fluid is released to the outside by the aforementioned fluid.

In terms of manufacturing technology, it is preferable that the height of the passage (the distance between the "top" and the "bottom") is constant, but it is not limited thereto. For example, the height of the passage may be relatively small in the first region in which the fluid flows into the passage, and the height of the passage may be relatively large in the second region in which the fluid flows out from the passage. In order to increase the heat absorbing action, it is preferable to increase the ratio of the cross-sectional area of the first region to the cross-sectional area of the second region. In order to increase the ratio of the cross-sectional area, it is preferable to increase the ratio of the width of the channel (the distance between the "two side walls" of the channel) to the height. Big.

There may be no "top" in the aforementioned passage. In the configuration without the "top", the lower surface of the second semiconductor element disposed on the upper side of the interposer (on the side opposite to the substrate) functions as a "top". There is also no "bottom" in the aforementioned passage. In the configuration without the "bottom", the upper surface of the first semiconductor element disposed on the lower side of the interposer (the side of the substrate) functions as a "bottom". In such a configuration, in the above configuration, the upper surface of the second semiconductor element or the lower surface of the first semiconductor element is capped at the opening of the channel.

(16) There are a plurality of options regarding the planar shape of the aforementioned passage in which the fluid causes "breaking heat expansion". For example, (a) a region having a constant cross-sectional area and a relatively small cross-sectional area → a region where the cross-sectional area is increased → a region having a constant cross-sectional area and a relatively large cross-sectional area, and (b) a region having a non-sectional area being a certain area, in fluid flow The cross-sectional area of the direction is increased (continuously) in order. Further, when the area having a relatively small cross-sectional area changes to a region having a relatively large cross-sectional area, the change is preferably rapid, but is not limited thereto. Further, the position at which the fluid flows in and the position where the fluid flows out are also not particularly limited.

(17) The number of the aforementioned channels may be one or more. For example, two of the aforementioned passages may be disposed inside the passage, and the regions in which the cross-sectional areas vary may be disposed at different positions. More specifically, in an example, the region in which the cross-sectional area of the first passage is changed is disposed in the lower left side of the interposer (when the interposer is viewed from the upper portion), and is disposed in the interposer in a region where the cross-sectional area of the second passage is changed. Top right. In such a configuration, the area where the cross-sectional area is changed is close to the area where the power consumption of the first or second semiconductor element is large. Domain (hotspot).

In the case of the above configuration having two or more of the above-described passages, one of the inlets of the passages can be combined to form one. For example, the inflow of the fluid to the plurality of channels may be one, and the fluid may be branched into each of the two or more channels in the interposer.

The heat reflecting layer and the heat radiation layer may be disposed on the top portion and the bottom portion of the channel, respectively. Further, the heat reflecting layer or the heat radiation layer may be disposed on the top portion or the bottom portion of the passage. Each of the heat reflecting layer and the heat radiation layer may be disposed only in a predetermined region disposed on the top portion and the bottom portion, or may be disposed on the top portion and fully integrated with the bottom portion. Further, the heat reflecting layer or the heat radiation layer may be selectively disposed on the sidewall of the channel.

(18) There is no limitation on the signal extraction method (electrical wiring) from the above-mentioned laminated module. For example, there is a configuration using a wire bonding (joining module) or a configuration using a through electrode (through electrode module). In the configuration using the through electrode, the first and second semiconductor elements disposed on both sides (upper and lower sides) of the interposer are electrically connected to each other by a through electrode formed on the interposer. Further, an electronic circuit or an electric wiring layer may be disposed on the front surface or the back surface of the interposer or on both the front and back surfaces to facilitate the electrical connection.

(19) In the multilayer module, the first and second semiconductor elements sandwiching the interposer may be two or more. For example, a plurality of semiconductor elements may be disposed on the surface or the back surface of the interposer in the same plane. It is also possible to form a laminated module composed of a plurality of semiconductor elements using two or more intermediate layers. For example, it can also be attached to the aforementioned first semiconductor element table. The interposer is mounted on the surface, and the second semiconductor element is mounted on the surface of the interposer, and an additional interposer is mounted on the surface of the second semiconductor element, and a third semiconductor element is mounted on the surface of the additional interposer. In this configuration, the channels may be disposed in each of the interposers, or the channels may be disposed only in the designated interposer.

In the above-mentioned laminated module, the above-described bonding module or through-electrode module is usually used. However, in the configuration in which a plurality of semiconductor elements are laminated, electrical connection using bonding and electrical connection using through electrodes may be used in combination. An example of such a configuration is a configuration of a "mixed" bonding module and a through electrode module.

According to the laminated module and the interposer of the present invention, it is possible to obtain (a) a structure in which a semiconductor element having a large power consumption is laminated, and it is possible to suppress stable temperature rise due to heat generation of the semiconductor element (b) The effect of suppressing the heat conduction between the stacked semiconductor elements and suppressing the temperature rise of the laminated module can be suppressed.

Hereinafter, preferred embodiments of the laminated module (layered semiconductor device) and the interposer of the present invention will be described with reference to the accompanying drawings.

(Configuration example of laminated module)

1A and 1B show the construction of a laminated module.

1A, the first semiconductor element 11a and the second semiconductor element 12a are stacked in this order on a substrate 10 made of a resin, a ceramic, a semiconductor or the like, and the bonding wires (metal thin wires) 13 are bonded to each other. A configuration example of electrical connection. Hereinafter, the laminated module having this configuration is referred to as "joining mode group". Here, the first semiconductor element 11a located at the lower position and the second semiconductor element 12a located at the upper position are both wafer-shaped, but are not limited to the wafer shape. The first semiconductor element 11a is fixed to the surface (upper surface) of the substrate 10 with an adhesive 17 or the like. The second semiconductor element 12a is fixed to the upper surface of the first semiconductor element 11a by an adhesive 17 or the like. The electrical connection between the semiconductor elements 11a and 12a and the substrate 10 is performed using the bonding wires 13.

In the configuration example of FIG. 1B, the first semiconductor element 11b and the second semiconductor element 12b are sequentially stacked on the substrate 10 in the same manner as the bonding module of FIG. 1A, but the electrical connection method is different. In other words, the front surface and the back surface of the first semiconductor element 11b are electrically connected to each other through the through electrode 14 penetrating the element 11b in the thickness direction thereof, and electrical connection (and mechanical connection) between the substrate 10 and the first semiconductor element 11b, and The electrical connection (and mechanical connection) between the first semiconductor element 11b and the second semiconductor element 12b is performed using the conductive sphere 15. In this manner, the substrate 10 and the first semiconductor element 11b and the second semiconductor element 12b are electrically connected to each other and mechanically connected (fixed) to each other. A filler 16 is filled between the substrate 10 and the first semiconductor element 11b and between the first semiconductor element 11b and the second semiconductor element 12b. This is to increase the mechanical connection strength between the substrate 10 using the sphere 15 and the elements 11b and 12b. Hereinafter, the laminated module having the configuration of FIG. 1B will be referred to as a "through electrode module".

The joint module of FIG. 1A and the laminated module of FIG. 1B respectively have advantages and disadvantages. That is, since the bonding module simply laminates the two semiconductor elements 11a and 12a on the substrate 10 and performs the electric wiring only by the bonding wires 13, no new technical development is required. However, the first semiconductor element must be met. The member 11a is larger than the second semiconductor element 12a, and can be surely subjected to conditions such as wire bonding from a position different in height. In this way, three or more semiconductor elements are laminated to form a bonding module of three or more layers. Further, in this configuration, when the cooling fluid (refrigerant) flows around the semiconductor elements 11a and 11b, the protection of the bonding wires 13 is applied in some form to prevent the bonding wires 13 from being cut.

In the multilayer module of FIG. 1B, a technique of embedding the through electrode 14 in the lower first semiconductor element 11b, a technique for stably mounting/melting/resolidifying a plurality of conductive balls 15, and a filling of the filler 16 are required. A technique of narrowing a gap between the substrate 10 and the first semiconductor element 11b and between the first semiconductor element 11b and the second semiconductor element 12b. In this configuration, since all the regions related to the wiring are located inside the semiconductor wafers 11b and 12b or covered with the filler 16, even if the above-described cooling fluid flows around, there is little possibility that the laminated module is broken.

(Example of a configuration of a bonding module using an interposer with a channel)

2A is a cross-sectional view showing a configuration example (layered module) in which the interposer 20 with a via is mounted on the bonding module of FIG. 1A, and FIG. 2B is a cross-sectional view of the interposer 20 along the line A-A.

As shown in FIG. 2A, in this configuration example, the interposer 20 having the vias is disposed on the surface (upper surface) of the first semiconductor element 11a disposed on the surface (upper surface) of the substrate 10, and is disposed on the surface (upper surface) of the interposer 20 There is a second semiconductor element 12a. In other words, the second semiconductor element 12a and the first semiconductor element 11a are disposed above and below the interposer 20, and the interposer 20 is sandwiched between the two elements 12a and 11a.

The first semiconductor element 11a is fixed to the substrate 10 with an adhesive 17 or the like. The surface (above). The interposer 20 is fixed to the surface (upper surface) of the first semiconductor element 11a with an adhesive 17 or the like. The second semiconductor element 12a is fixed to the upper surface of the interposer 20 by an adhesive 17 or the like. The subsequent agent 17 is preferably a material having a large thermal conductivity (for example, a resin in which a metal filler is kneaded), but is not limited thereto.

The first semiconductor element 11a is smaller than the substrate 10. The interposer 20 is smaller than the first semiconductor element 11b. The second semiconductor element 12a is smaller than the interposer 20. The electrical connection between the semiconductor elements 11a and 12a and the substrate 10 is performed using the bonding wires 13.

The passage 21 formed inside the interposer 20 is supported by the upper wall 23 and the lower wall 24 and the left and right side walls 22. In other words, the passage 21 is divided by the upper wall 23 and the lower wall 24 and the side wall 22. The front end portion (upstream side end portion) and the rear end portion (downstream side end portion) of the passage 21 are opened, so that the front wall and the rear wall of the passage 21 are not present. In the passage 21, the fluid for cooling (cold coal) flows in the direction indicated by the arrow 25 in Fig. 2B, and in Fig. 2A, the direction perpendicular to the plane of the paper (from the front to the deep, from the front end portion to the rear end portion) flows. In this configuration, heat generated in the first and second semiconductor elements 11a and 12a is absorbed by the fluid flowing through the channel 21, and is discharged to the outside of the laminated module. The flow of such a fluid can be easily realized by a pump, a compressor, a pipe, or the like (none of which is shown) as will be described later.

The fluid for cooling is also referred to as "refrigerant" and has the property of being able to absorb heat from a heat generating object and transport it to the outside. As the fluid, for example, (1) chlorofluorocarbons/chlorofluorocarbons (multiple uses, many types); (2) organic compounds such as butane and isobutane; (3) hydrogen, helium, An inorganic compound such as ammonia, water or hydrogen dioxide.

In addition, it is sufficient that the passage 21 is supported by at least the side walls 22 on both sides. At least one of the upper wall 23 and the lower wall 24 may be omitted.

The upper wall 23 and the lower wall 24 of the passage 21 are preferably formed of a material having a large thermal conductivity, but are not necessarily limited thereto. Further, the upper wall 23 and the lower wall 24 are formed of a single crystal cymbal, and the outer surface of the upper wall 23 and the lower wall 24 (that is, the lower surface and the upper surface of the upper wall 23, the upper surface and the lower surface of the lower wall 24) are disposed by electronic components or An electronic circuit or an electric wiring layer composed of a transistor or the like may also be used. When an electronic circuit or an electric wiring layer is formed on the surface on which the channel 21 is exposed (that is, the lower surface of the upper wall 23 and the upper surface of the lower wall 24), it is preferable to dispose the insulating layer by the outermost layer of the surface (not (Illustration) to protect the electronic circuit or the wiring layer from corrosion or contamination caused by the cooling fluid of the electronic circuit or the electrical wiring layer.

(Example of a configuration of a through electrode module using an interposer with a channel)

Fig. 3A is a cross-sectional view showing a configuration example (stacking module) in which the interposer 30 with a via is mounted on the through electrode module of Fig. 1B, and Fig. 3B is a cross-sectional view of the interposer 30 along the line B-B.

As shown in FIG. 3A, in this configuration example, the interposer 30 having the vias is disposed on the surface (upper surface) of the first semiconductor element 11b disposed on the surface (upper surface) of the substrate 10, and is disposed on the surface (upper surface) of the interposer 30. There is a second semiconductor element 12b. In other words, the second semiconductor element 12b and the first semiconductor element 11b are disposed above and below the interposer 30, and the interposer 30 is sandwiched between the two elements 12b and 11b.

A through electrode 36 penetrating in the thickness direction is embedded in the left and right side walls 32 of the interposer 30. The through electrodes 36 are electrically connected (and mechanically connected) to the electronic circuit of the second semiconductor element 12b through the conductive balls 37, Further, the conductive ball 38 is electrically connected (and mechanically connected) to the electronic circuit of the first semiconductor element 11b. In other words, the electronic circuits of the first semiconductor element 11b and the second semiconductor element 12b are electrically connected to each other using the through electrodes 36, and are mechanically connected (fixed) to each other. In this manner, the substrate 10 and the first semiconductor element 11b and the second semiconductor element 12b are electrically connected to each other and mechanically connected (fixed) to each other. Further, electrical connection and mechanical connection between the substrate 10 and the first semiconductor element 11b are performed using the conductive balls 15 as in the case of FIG. 1B.

A filler 16 is filled between the substrate 10 and the first semiconductor element 11b, between the first semiconductor element 11b and the second semiconductor element 12b, and between the interposer 30 and the second semiconductor element 12b. This is to increase the mechanical connection strength between the substrate 10 using the balls 15, 37 and 38 and the interposer 30 and the elements 11b and 12b.

The through electrode 36 of the interposer 30 may not be formed on the upper wall 33 and the lower wall 34, but may be formed only on the left and right side walls 32. In other words, the electrical connection points (corresponding to the bonding pads) disposed on the semiconductor elements 11b and 12b must be disposed at portions of the interposer 30 that face the left and right side walls 32.

Unlike the configuration example of the bonding module, the first semiconductor element 11b and the interposer 30 and the second semiconductor element 12b have substantially the same size and are smaller than the substrate 10. Here, the size (area) of the first semiconductor element 11b and the interposer 30 and the second semiconductor element 12b constituting the laminated module 40 are all equal, but are not limited thereto. For example, the interposer 30 may be smaller than the first semiconductor element 11b, and the second semiconductor element 12b may be smaller than the interposer 30.

The passage 31 formed inside the interposer 30 is the upper wall 33 and the lower wall 34 Supported by the side walls 32 of the left and right sides. In other words, the passage 31 is divided by the upper wall 33 and the lower wall 34 and the side wall 32. The front end portion (upstream side end portion) and the rear end portion (downstream side end portion) of the passage 31 are opened, so that the front wall and the rear wall of the passage 31 are not present. In the passage 31, the fluid for cooling (cold coal) flows in the direction indicated by the arrow 35 in Fig. 3B, and flows in a direction perpendicular to the plane of the paper (from the front to the deep, from the front end portion to the rear end portion) in Fig. 3A. In this configuration, heat generated in the first and second semiconductor elements 11b and 12b is absorbed by the fluid flowing through the channel 31, and is discharged to the outside of the laminated module. The flow of such a fluid can be easily realized by a pump, a compressor, a pipe, or the like (none of which is shown). As the fluid, it can be used as a configuration example of a joint module using an interposer having a passage.

Further, it is sufficient that the passage 31 is supported by at least the side walls 32 on both sides, and at least one of the upper wall 33 and the lower wall 34 may be omitted.

The upper wall 33 and the lower wall 34 of the passage 31 are preferably formed of a material having a large thermal conductivity, but are not necessarily limited thereto. Further, the upper wall 33 and the lower wall 34 are formed of a single crystal cymbal, and the outer surfaces of the upper wall 33 and the lower wall 34 (that is, the lower surface and the upper surface of the upper wall 33, the upper surface and the lower surface of the lower wall 34) are disposed by electronic parts or An electronic circuit or an electric wiring layer composed of a transistor or the like may also be used. When an electronic circuit or an electrical wiring layer is formed on the exposed surface of the channel 31 (i.e., the lower surface of the upper wall 33 and the upper surface of the lower wall 34), it is preferable to arrange the insulating layer by the outermost layer of the surface (not (Illustration) to protect the electronic circuit or the wiring layer from corrosion or contamination caused by the cooling fluid of the electronic circuit or the electrical wiring layer.

Filled in the substrate 10 and the first semiconductor element 11b and the interposer 30 The filler 16 having a gap between the second semiconductor elements 12b is preferably a material having a large thermal conductivity (for example, a resin in which a metal filler is kneaded), but is not limited thereto.

(Example of a configuration of a through electrode module using an interposer with a channel)

4A is a cross-sectional view showing a configuration example (construction structure) of the through electrode module (having an interposer having the channel 30) shown in FIG. 3B, and FIG. 4B is a cross-sectional view taken along line C-C thereof.

As described above, the build-up module 40 is mainly composed of the first semiconductor element 11b disposed on the surface of the substrate 10, the interposer 30 disposed on the surface of the first semiconductor element 11b, and the second semiconductor element 12b disposed on the surface of the interposer 30. The element 31 is formed inside the interposer 30.

A cover 42 covering the entire laminated module 40 is attached to the substrate 10, and an internal space 50 is formed between the substrate 10 and the cover 42. The cover 42 is provided with an inlet 43 for introducing the cooling fluid L into the internal space 50 and an outlet 44 for discharging the fluid L from the internal space 50. A leg portion 45 is formed at a lower end of the cover 42 , and a mounting portion 46 is formed on the surface of the substrate 10 corresponding to the leg portion 45 . The cover 42 is fixed to the substrate 10 by attaching/fixing the leg portion 45 to the mounting portion 46 . .

The fluid L flows into the internal space 50 from the inlet 43 in the direction indicated by the arrow 47a by the pump P (or compressor) provided outside the cover 42, and flows out from the outlet 44 in the direction indicated by the arrow 47b, and returns to the pump P. Further, T1 is a pipe connecting the inlet 43 and the pump P, and T2 is a pipe connecting the outlet 44 and the pump P.

The fluid L introduced into the internal space 50 through the inlet 43 passes along the path indicated by the arrow 48 at the passage 31 of the interposer 30 from its upstream side end to The downstream end portion is expected to absorb heat generated in the first semiconductor element 11b and the second semiconductor element 12b therebetween. However, in the internal space 50, in addition to the flow of the expected fluid L, undesired flow of fluid L along the arrow 49 around the laminated module 40 occurs. If the cross-sectional area of the channel 31 (especially the height of the channel 31) is small (for example, several hundred micrometers), the gap (sectional area) between the laminated module 40 and the cover 42 is much larger (for example) At a level of hundreds of millimeters, the flow rate along arrow 48 is less and the flow rate along arrow 49 is greater. If there is such a size relationship between the flows, there is a high possibility that the desired heat absorption effect through the fluid L flowing through the passage 31 cannot be obtained. Therefore, in order to reliably obtain the desired cooling effect on the build-up module 40, it is not sufficient to mount the cover 42 covering the entire laminated module 40 on the substrate 10 (see FIGS. 4A and 4B). Some countermeasures need to be taken.

(First example of a structure in which a crotch portion is attached to a configuration example of a cooling through electrode module)

5A, FIG. 5B and FIG. 6 show a first example of the structure of the laminated module in which the structure of the structure is added to the structure of FIGS. 4A and 4B. Fig. 5A is a longitudinal sectional view of the structure of the structure along the flow direction of the cooling fluid L, and Fig. 5B is a cross-sectional view taken along line C-C of Fig. 5A. Fig. 6 is a perspective view showing a state in which the cover 42 of the structure is removed from the substrate 10.

In the first example of the structure of the laminated module, in the configuration example (using the through electrode module) shown in FIGS. 4A and 4B, the internal space is provided between the laminated module 40 and the cover 42. 50 is divided into a crotch portion 51 of the upstream side space and the downstream side space. 5A and 5B, and FIG. 4A and FIG. 4B Symbols with the same constituent elements show the same constituent elements.

The overall shape of the crotch portion 51 is substantially inverted U-shaped, and the path around the laminated module 40 is blocked by covering the outer side of the laminated module 40 in a strip shape inside the cover 42. In other words, the crotch portion 51 divides the internal space 50 into two spaces of the upstream side space on the inlet 43 side and the downstream side space on the outlet 44 side. Thus, the flow of the undesired fluid L around the build-up module 40 as indicated by the arrow 49 is prevented from occurring.

Since the crotch portion 51 is provided, the upstream side space and the downstream side space of the internal space 50 are connected to each other only by the passage 31 of the interposer 30, and therefore, the fluid L flowing from the inlet 43 into the upstream side space passes through the path indicated by the arrow 48. The passage 31 reaches the downstream side space. Thereafter, it is discharged from the outlet 44. Therefore, an efficient endothermic effect can be achieved, and the desired cooling effect on the laminated module 40 can be surely obtained.

Regarding the position of the crotch portion 51 and the thickness of the crotch portion 51 (the length in the flow direction of the fluid L), except that the inlet (upstream side end portion) and the outlet (downstream side end portion) of the passage 31 are not blocked, There are no special restrictions.

(Second example of a structure in which a crotch portion is attached to a configuration example of the cooling through electrode module)

FIGS. 7A and 7B and FIGS. 8A and 8B show a manufacturing method of a second example of the structure of the laminated module in which the structure of the structure is added to the structure of FIGS. 4A and 4B. 7A and 7B are perspective views showing the manufacturing method, and Figs. 8A and 8B are cross-sectional views thereof. In FIGS. 8A and 8B, the longitudinal section of the structure is depicted in the upper position, and the cross section is depicted in the lower position.

The second structure of the laminated module is as shown in Fig. 8B (d1) and (d2), for example. The cover 42 of the first example described above is composed of two cover halves 42a and 42b, and the cover halves 42a and 42b are fixed to the substrate 10 with a predetermined gap G therebetween. Similarly to the first example, the crotch portion 51 has a substantially inverted U shape and covers the outer side of the laminated module 40 in a strip shape. However, since the gap portion G is disposed between the cover half bodies 42a and 42b, the outer peripheral surface of the crotch portion 51 is The cover 42 (the cover halves 42a and 42b) is exposed to the outside. The other configurations are the same as in the first example.

As described above, the crotch portion 51 may be exposed to the outside from the cover 42 , and the entire crotch portion 51 may not be disposed inside the cover 42 .

Next, a method of manufacturing the second example of the structure will be described.

First, as shown in FIG. 7A (a) and FIGS. 8A (a1) and (a2), the build-up module 40 is mounted on the surface of the substrate 10. The configuration of the build-up module 40 is the same as that of the through electrode 40 (having the interposer 30 with the via) shown in FIGS. 3A and 3B, and thus the description thereof is omitted. In addition, although the size (area) of the first semiconductor element 11b and the interposer 30 and the second semiconductor element 12b constituting the laminated module 40 are equal, the present invention is not limited thereto, and may be different from each other. For example, the interposer 30 is smaller than the first semiconductor element 11b, and the second semiconductor element 12b is smaller than the interposer 30.

Next, as shown in FIG. 7A(b) and FIGS. 8A(b1) and (b2), an adhesive is applied to the peripheral region of the lower end of the build-up module 40 on the surface of the substrate 10, and then a layer 55 is formed on the substrate 10. The adhesive used for the adhesive layer 55 is, for example, an epoxy resin whose viscosity is such a value as to maintain its shape after application (i.e., flow without thickness).

Next, as shown in FIG. 7B(c) and FIGS. 8B(c1) and (c2), the cover half 42a and the cover half 42b are disposed on the surface of the substrate 10. The cover halves 42a and 42b will The shape of the cover 42 of Fig. 6 is divided into two, and an inlet 43 and an outlet 44 are respectively provided. In a state in which the cover halves 42a and 42b are disposed on the surface of the substrate 10, a gap G is formed between the cover halves 42a and 42b. The size (interval) of the gap G is usually several millimeters (mm), but is not limited thereto.

The mounting portions 46 provided at the positions of the leg portions 45 of the cover half bodies 42a and 42b and the respective leg portions 45 provided on the surface of the substrate 10 are bonded to each other using an adhesive. This can be followed by the use of an adhesive. It is possible to use a well-known technique such as soldering (when the cover halves 42a and 42b and the surface of the mounting portion 46 are both metal), and electrostatic bonding (the cover halves 42a and 42b are made of metal, and the surface of the mounting portion 46 is glass), The direct bonding between the molecules (the case where the cover halves 42a and 42b and the surface of the mounting portion 46 are both enamel crystals) and the like.

The cover half bodies 42a, 42b and the leg portions 45 preferably overlap the end portions of the adhesive layer 55, but are not limited thereto. In the case of overlap, the leg portion 45 is pressed against the surface of the substrate 10, and then the end portion of the layer 55 overlapping the leg portion 45 is deformed.

Next, the adhesive between the adhesive layer 55 and the adhesive between the leg portion 45 and the mounting portion 46 is cured to secure the mechanical strength of the subsequent process. When the leg portion 45 and the attachment portion 46 are joined by a material other than the adhesive or a method, only the adhesive of the adhesive layer 55 may be cured.

Next, as shown in Fig. 7B(d) and Figs. 8B(d1) and (d2), the resin G is flowed from the gap G between the cover halves 42a and 42b, and the outer peripheral surface of the through electrode module 40 is formed into a substantially inverted U shape. The crotch part 51. As the resin 56, an epoxy resin or the like can be used. The gap between the cover halves 42a and 42b and the build-up module 40 can be completely filled with the resin 56 by the fluidity of the resin 56. By choosing the tree appropriately The viscosity of the grease 56 enables the resin 56 to remain only in the peripheral region of the gap G without blocking the entrance and exit of the passage 31 of the interposer 30.

As described above, since the crotch portion 51 is formed by flowing the resin 56 into the gap G between the cover halves 42a and 42b, there is an advantage that the formation of the crotch portion 51 is easier than in the case of the first example described above.

Since the pressure of the fluid L flowing from the inlet 43 is applied to the crotch portion 51, in the long term, when the resin 56 forming the crotch portion 51 is deformed, the resin 56 must be sufficiently cured. As described above, since the crotch portion 51 has a function of insulating (separating) the upstream side space on the inlet 43 side from the downstream side space on the outlet 44 side, the front side (outer side) of the crotch portion 51 is firmly adhered to the cover half body 42a. The inner wall surface of the portion 42b and the lower end portion of the crotch portion 51 are firmly adhered to the subsequent layer 55.

In the manufacturing procedure of the dam portion 51 in the second example of the structure of the laminated module, the arrangement area of the dam portion 51 is defined by the gap G. In general, as shown in Fig. 7B(d) and Figs. 8B(d1) and (d2), the lengths of the cover halves 42a and 42b (the lengths in the flow direction of the fluid L) are made equal to each other, and the gap G is also The portion 51 is disposed at the center of the build-up module 40. However, it may not be necessary to configure this. For example, the length of the cover half 42a may be made shorter than the length of the cover half 42b. In this case, the gap G, that is, the crotch portion 51 is disposed offset from the central portion of the buildup module 40 toward the inlet 43 side.

7B and 8B show only an example of the arrangement of the inlet 43 and the outlet 44 of the cover half bodies 42a and 42b, and may be other arrangements. For example, (i) the inlet 43 may be disposed on the upper surface of the cover half 42a, the outlet 44 may be disposed on the upper surface of the cover half 42b, and (ii) the inlet 43 may be disposed on the side of the cover half 42a, and the outlet 44 It is disposed on the cover half 42b. The area in which the inlet 43 and the outlet 44 are disposed is not particularly limited, and the environment in which the structure of the second example is disposed (for example, the arrangement of components on a printed circuit board) can be appropriately determined.

In the second example of the structure of the laminated module, the dam portion 51 blocks the path around the laminated module 40. In other words, the crotch portion 51 divides the internal space 50 into two spaces of the upstream side space on the inlet 43 side and the downstream side space on the outlet 44 side. Thus, the flow of the undesired fluid L passing through the laminated module 40 as indicated by the arrow 49 is not prevented, and all of the fluid L flowing from the inlet 43 into the upstream side space passes through the passage 31 and reaches the path indicated by the arrow 48. After the downstream side space, it is discharged from the outlet 44. Therefore, similarly to the case of the first example described above, an efficient heat absorbing effect can be achieved, and the desired cooling effect on the laminated module 40 can be surely obtained.

(The third example of the structure in which the crotch portion is attached to the configuration of the cooling through electrode module)

Fig. 9 is a view showing a third example of the structure of the laminated module in which the crotch portion is attached to the configuration of the cooling through electrode module.

In this example, a laminated module 40a composed of five semiconductor elements and two interposer layers (three-stage excluding the interposer) is used, and the other configuration is the same as that of the first example.

The build-up module 40a is disposed on the surface of the interposer 30 by the first semiconductor element 11b disposed on the surface (upper surface) of the substrate 10, the interposer 30 on the surface (upper surface) of the first semiconductor element 11b. a second semiconductor element 12b disposed on the surface (upper surface) of the second semiconductor element 12b, and an interposer 30 having a via 31 attached thereto, and disposed on the surface of the interposer 30 The third semiconductor element 12b' of the above (upper side) is configured. In other words, the second semiconductor element 12b and the first semiconductor element 11b are disposed above and below the lower interposer 30, and the lower interposer 30 is interposed between the two elements 12b and 11b, and is disposed above and below the upper interposer 30. There are three semiconductor elements 12b' and second semiconductor elements 12b, and the two elements 12b' and 12b have a structure in which the upper interposer 30 is interposed.

Since the substantially U-shaped crotch portion 51 is disposed on the outer peripheral surface of the laminated module 40a, the fluid L passes only through the passages 31 of the two interposing layers 30. The fluid L flowing into the internal space 50 from the inlet 43 of the cover 42 flows out of the outlet 44 of the cover 42 to the outside after passing through the passage 31. The crotch portion 51 is entirely located inside the cover 42 and is not exposed from the cover 42.

In addition, the channel 31 may not be formed by both of the two interposers 30. For example, the channel 31 may be formed only on the lower interposer 30 or only on the upper interposer 30.

(Fourth example of a structure in which a crotch portion is attached to a configuration example of a cooling through electrode module)

10A and FIG. 10B and FIG. 11A and FIG. 11B show a manufacturing method of a fourth example of the structure of the laminated module in which the crucible is added to the configuration of the cooling through electrode module. 10A and 10B are perspective views showing the manufacturing method, and Figs. 11A and 11B are cross-sectional views thereof. In FIGS. 11A and 11B, the longitudinal section of the structure is depicted in the upper position, and the cross section is depicted in the lower position.

In the fourth configuration of the structure, as shown in Figs. 11B (d1) and (d2), the cover 42 is composed of two cover halves 52a and 52b, and the cover halves 52a and 52b are separated by a predetermined gap G. It is fixed to the substrate 10 in close contact. The structure of the cover 52 The difference is similar to the case of the second example described above, but the difference is that the lengths of the cover halves 52a and 52b are shorter than the length of the second example, and the gap G between the cover halves 52a and 52b is smaller than the second example. The gap is large and is set to be close to the total length of the build-up module 40. Further, the crotch portion 51 has a substantially inverted U shape as in the second example, and the outer portion of the band-covering laminated module 40 is substantially uniform. However, the crotch portion 51 is disposed in a large gap between the cover halves 52a and 52b. G, therefore, the length (the length of the flow direction of the fluid L) is larger than that of the second example described above, and is a value close to the entire length of the laminated module 40. The other configurations are the same as in the first example.

In the second example (see FIGS. 8B (d1) and (d2)), the internal space 50 is divided into the upstream side space and the downstream side space by the weir portion 51. In the upstream space, although there is a narrow U-shaped narrow area between the inner surface of the cover half 42a and the outer peripheral surface of the laminated module 40, after the fluid L enters the area, it will stay there (fluid) The state of L almost does not flow). If the retention of the fluid L in the internal space 50 is caused, the heat dissipation of the fluid L is hindered, and the cooling effect of the desired laminated module 40 cannot be obtained. This point is also the same on the downstream side space. This fourth case removes its difficulty.

That is, in the fourth example, since the gap G between the cover halves 52a and 52b is set to be close to the total length of the laminated module 40, the length of the crotch portion 51 (the length of the flow direction of the fluid L) is also close. The value of the full length of the laminated module 40. Therefore, a narrow region having a substantially inverted U shape is hardly formed between the inner faces of the cover half bodies 52a and 52b and the outer peripheral surface of the buildup module 40. As a result, the cooling effect of the desired laminated module 40 can be obtained without hindering the heat dissipation by the retention of the fluid L.

Next, a method of manufacturing the fourth example of the structure will be described.

First, the mounting step of the laminated module 40 shown in FIG. 10A(a) and FIGS. 11A(a1) and (a2), and the bonding layer 55 shown in FIG. 10A(b) and FIGS. 11A(b1) and (b2). The formation step is the same as the second example described above. Therefore, the description of these is omitted.

Next, as shown in FIG. 10B(c) and FIGS. 11B(c1) and (c2), the cover halves 52a and 52b are disposed on the surface of the substrate 10. Similarly to the cover half bodies 42a and 42b in Fig. 7B, the cover half bodies 52a and 52b have a shape in which the cover body 52 is divided into two, and the inlet 43 and the outlet 44 are respectively provided. In a state in which the cover halves 52a and 52b are in close contact with and fixed to the surface of the substrate 10, a gap G is formed between the cover halves 52a and 52b. The size (interval) of the gap G is set to be substantially equal to the entire length of the build-up module 40.

The leg portions 45 of the cover half bodies 52a and 52b and the mounting portion 46 on the surface of the substrate 10 are joined to each other by an adhesive or the like in the same manner as in the second example described above.

The inner side of the leg portion 45 preferably overlaps the end portion of the above-mentioned adhesive layer 55, but is not limited thereto. In the case of overlap, the leg portion 45 is pressed against the surface of the substrate 10, and then the end portion of the layer 55 overlapping the leg portion 45 is deformed.

Next, the adhesive between the adhesive layer 55 and the adhesive between the leg portion 45 and the mounting portion 46 is cured to secure the mechanical strength of the subsequent process. When the leg portion 45 and the attachment portion 46 are joined by a material other than the adhesive or a method, only the adhesive of the adhesive layer 55 may be cured. This point is the same as the second example described above.

Next, as shown in Fig. 10B(d) and Figs. 11B(d1) and (d2), the resin G is flowed from the gap G between the cover halves 52a and 52b, and is formed in a substantially inverted U shape on the outer peripheral surface of the laminated module 40. Crotch 51. Epoxy resin can be used as the resin 56 Fat and so on. The two gaps between the cover halves 52a and 52b and the build-up module 40 can be completely filled with the resin 56 by the fluidity of the resin 56. The gap G is larger than that of the above-described second embodiment, but by appropriately selecting the viscosity of the resin 56, the resin 56 can flow in and stay without blocking the inlet and outlet of the passage 31 of the interposer 30 and filling. Buried gap G as a whole.

At this time, since the crotch portion 51 covers substantially the entire outer peripheral surface of the through electrode module 40, the outer peripheral surface of the through electrode module 40 is not exposed from the cover 52. The outer peripheral surface of the flange portion 51 is exposed from the gap G of the cover 52.

In the same manner as in the second example described above, since the pressure of the fluid L flowing from the inlet 43 is applied to the crotch portion 51, in the long term, when the resin 56 forming the crotch portion 51 is deformed, the resin 56 must be sufficiently Cured. As described above, since the crotch portion 51 has a function of insulating (separating) the upstream side space on the inlet 43 side from the downstream side space on the outlet 44 side, the front side (outer side) of the crotch portion 51 is firmly adhered to the cover half body 52a. The inner wall surface of the portion 52b and the lower end portion of the crotch portion 51 are firmly adhered to the subsequent layer 55.

In the production procedure of the crotch portion 51 in the fourth example, the arrangement area of the crotch portion 51 is also defined by the gap G in the same manner.

10B and FIG. 11B show only an example of the arrangement of the inlet 43 and the outlet 44 of the cover half bodies 52a and 52b, and may be other arrangements. This point is the same as the second example described above.

As described above, in the fourth example of the structure of the laminated module, as in the third example, the cooling effect of the laminated module 40 is not caused by the retention of the fluid L and the heat dissipation effect. The effect of the second example described above is high.

In addition, in FIGS. 10A and 10B and FIGS. 11A and 11B, the structure in which the crotch portion 51 fills the entire gap G is shown, but the fourth example is not limited thereto. For example, only the resin 56 may be limited to the vicinity of both end portions of the inflow gap G (that is, the downstream end portion of the cover half 52a and the upstream end portion of the cover half 52b), whereby (Fig. 13C(d1) and ( As shown in d2), the crotch portions 51a and 51b are formed only at the both end portions of the gap G. In this case, most of the outer peripheral surface of the laminated module 40 is exposed outside the cover 52 from between the flange portions 51a and 51b.

(Fifth example of a structure in which a crotch portion is attached to a configuration example of a cooling through electrode module)

12A and FIG. 12B and FIG. 13A to FIG. 13D show a fifth example of the manufacturing method of the structure of the laminated module in which the crucible portion is added to the configuration of the cooling through electrode module. 12A and 12B are perspective views showing the manufacturing method, and Figs. 13A to 13D are cross-sectional views thereof. In FIGS. 13A to 13D, the longitudinal section of the structure is depicted in the upper position, and the cross section is depicted in the lower position.

The fifth example of the structure is characterized in that a second cover (cover) 57 is attached to the cover 52 of the build-up module 40, and is a double cover. That is, as shown in Figs. 13D (e1) and (e2), the cover 52 is composed of two cover halves 52a and 52b and the gap G between the cover halves 52a and 52b is set to be the same as in the above-described fourth example. It is close to the value of the full length of the laminated module 40. However, the fourth example is different in that the crotch portions 51a and 51b are formed (distributed) only at the both end portions of the gap G, and most of the outer peripheral surface of the laminated module 40 is interposed between the crotch portions 51a and 51b. The gap G is exposed to the outside of the cover 52.

Further, a second cover (cover) 57 is attached to the surface of the substrate 10 to cover the cover 52. The second cover 57 has an inlet 58 on the upstream side, and is downstream. The side has an exit 59. In the space between the cover 52 and the second cover 57, the cooling second fluid L2 flows from the inlet 58 to the outlet 59. The inlet 43 and the outlet 44 of the cover 52 are exposed to the outside through the side wall of the second cover 57, and the penetrations are sealed with resin or the like so that the fluid L and the second fluid L2 do not leak.

The arrangement of the inlet 43 and the outlet 44 of the cover half bodies 52a and 52b and the arrangement of the inlet 58 and the outlet 59 of the second cover 57 may be arbitrarily changed as necessary.

Next, the manufacturing method of the fifth example will be described.

First, the mounting step of the laminated module 40 shown in FIG. 12A(a) and FIGS. 13A(a1) and (a2), and the bonding layer 55 shown in FIG. 12A(b) and FIGS. 13A(b1) and (b2). The steps of forming the cover, the cover 52 (the cover halves 52a and 52b) shown in Figs. 12A(c) and 13B(c1) and (c2) are the same as those of the fourth example described above, and therefore the description thereof will be omitted.

Then, as shown in Fig. 12B (d) and Fig. 13C (d1) and (d2), the resin 56 is separately flowed in the vicinity of the downstream end portion of the cover half 52a and the vicinity of the upstream end portion of the cover half 52b. The outer peripheral surface of the through electrode module 40 forms two crotch portions 51a and 51b having a substantially inverted U shape. As the resin 56, an epoxy resin or the like can be used. The gap between the cover half bodies 52a and 52b in the vicinity of the downstream end portion of the cover half 52a and the upstream end portion of the cover half 52b and the build-up module 40 can be completely filled with the resin 56 by the fluidity of the resin 56. Blocked. Both ends of the gap G are covered by the resin 56 (the dam portions 51a and 51b), but the central portion thereof is kept exposed.

Finally, as shown in Fig. 12B(e) and Figs. 13D(e1) and (e2), the second cover (cover) 57 is tightly attached to cover the cover 52 (the cover halves 52a and 52b). It is fixed on the surface of the substrate 10. Thus, the fifth example of the structure is completed.

As described above, in the fifth example of the structure of the laminated module, the double-shell structure is configured, and the inner space 50 of the inner cover 52 is divided into the upstream space and the downstream space by the flange portions 51a and 51b. The fluid L for cooling is introduced/discharged from the inlet 43 to the outlet 44. Further, in the space between the cover 52 and the second cover 57, the second fluid L2 for cooling flows from the inlet 58 to the outlet 59. There is no crotch in this space. Therefore, in addition to the heat generation by the cooling fluid L, the heat generation by the second fluid L2 is simultaneously performed. Therefore, compared with the third and fourth examples, the structure is somewhat complicated, but the cooling effect on the build-up module 40 (the second semiconductor element 12b and the first semiconductor element 11b) is higher than that of the third and fourth examples. High effect.

The fluid L and the second fluid L2 need not be the same type. For example, the fluid L may be a liquid, and the second fluid L2 may be a gas or the like. Since the fluid L passes through the passage 31 having a small (stencil) sectional area as described above, it is preferable to supply the fluid having the increased pressure to the inlet 43 using a compressor or a pump. On the other hand, the second fluid L2 is not necessary because the cross-sectional area is much larger than the area of the passage 31. Therefore, a simpler configuration can be adopted for the second fluid. For example, it is also possible to provide a single port in which the second fluid L2 flows in and out of the second cover (the cover) 57 (this port functions as an inlet and an outlet), and is configured as a heat pump mounted on a notebook computer (this does not use compression). Machine) similar composition.

(Laminated module of the first embodiment)

Fig. 14 and Figs. 15A and 15B show a laminated module (through electrode module) according to the first embodiment of the present invention. Fig. 14 is a cross-sectional explanatory view showing the constitution of the interposer 30a used in the laminated module. 15A and 15B are the laminated modes A longitudinal section of the assembled structure and a cross-sectional view along its D-D line.

Further, in the first embodiment, the through electrode module is used, but of course, it may be a joint module. Further, when the module is mounted on a substrate, any of the above-described structure (having a substrate and a cover) can be applied.

In the laminated module according to the first embodiment, the heat reflecting layer 61a and the heat radiation layer 61b exposed to the channel 31 are housed in the interposer 30a.

As shown in Fig. 14, a heat reflecting layer 61a is formed on the inner surface of the upper wall 33 of the interposer 30a via an insulating layer 62a, and a heat radiating layer 61b is formed on the inner surface of the lower wall 34 via an insulating layer 62b. The heat reflecting layer 61a covers the entire inner surface of the upper wall 33. The heat radiation layer 61b covers the entire inner surface of the lower wall 34. Thus, inside the channel 31 of the interposer 30a, the upper heat reflecting layer 61a and the lower heat radiating layer 61b oppose each other. Therefore, the upper wall 33 and the lower wall 34 of the passage 31 are respectively partitioned by the heat reflective layer 61a and the heat radiation layer 61b.

A heat source 63 (this corresponds to the second semiconductor element 12b) is in contact with the outside of the upper wall 33. A heat source 64 (this corresponds to the first semiconductor element 11b) is in contact with the outside of the lower wall 34.

The structure of the interposer 30a shown in Fig. 14 is also referred to as "radiation/reflection structure".

The heat reflecting layer 61a is often formed of a metal thin film or the like, and has a function of reflecting heat incident from both the upper side and the lower side. The heat reflecting layer 61a is preferably formed of, for example, a film of gold or aluminum, and the surface thereof is a mirror surface, but is not limited thereto. Further, the heat reflecting layer 61a preferably covers the entire inner surface of the upper wall 33, but is not limited thereto. For example, the heat reflecting layer 61a may be disposed only in a designated area on the inner surface of the upper wall 33.

The heat radiation layer 61b is formed of, for example, a heat radiation layer also called "gold black". "Golden Black" can be obtained by vapor deposition of gold in an ambient gas with a low degree of vacuum. It has tiny irregularities on the surface of "Golden Black" and looks black when viewed with visible light. "Golden Black" is known to have a property of absorbing heat when its surface temperature is lower than the ambient temperature, and radiating heat when its surface temperature is higher than the ambient temperature. In addition, it is also possible to replace "golden black" with other materials, such as a resin colored in black. Further, the heat radiation layer 61b preferably covers the entire inner surface of the lower wall 34, but is not limited thereto. For example, the heat radiation layer 61b may be disposed only in a designated area on the inner surface of the lower wall 34.

The upper wall 33 and the lower wall 34 are preferably formed of a material having a large thermal conductivity, but are not necessarily limited thereto. The upper wall 33 and the lower wall 34 are each formed of a single crystal cymbal, and electronic circuits or electric wires composed of electronic components or transistors are disposed on the respective surfaces (the inner surface of the upper wall 33 and the inner surface of the lower wall 34). In the case of the layer, it is preferable to interpose the insulating layers 62a and 62b. These insulating layers 62a and 62b have a function of preventing the electronic circuit or the like from being short-circuited by the heat reflecting layer 61a (which is a conductive film due to the metal thin film) or the heat radiating layer 61b (which is conductive in the case of gold black).

In Fig. 14, arrows 66a and 66b show the flow direction of the cooling fluid L. The heat radiated from the heat radiation layer 61b into the channel 31 and the heat which is reflected into the channel 31 by the heat reflection layer 61a are discharged to the outside of the interposer 30a by the fluid L flowing through the channel 31. The flow of such a fluid L can be easily realized by using a pump, a compressor, a pipe, or the like (none of which is shown). The fluid L is also called "refrigerant" and has the property of being able to absorb heat from a heat generating object and transport it to the outside. For example, use (1) chlorofluorocarbons/non-chlorofluorocarbons (use more, type (2) organic compounds such as butane and isobutane; and (3) inorganic compounds such as hydrogen, helium, ammonia, water, and hydrogen peroxide. This point is the same as above.

Here, if it is assumed that the heat source 64 located in the lower position generates heat larger than the upper heat source 63, the heat generated in the lower heat source 64 reaches the surface of the heat radiation layer 61b through the inside of the lower wall 34 and the insulating layer 62b (channel 31 side) On the surface, the surface is radiated toward the fluid L flowing through the channel 31. Most of the heat thus radiated is absorbed by the fluid L. The heat that is not absorbed by the fluid L and reaches the heat reflecting layer 61a is still absorbed by the fluid L because it is reflected toward the fluid L on the surface (the surface on the side of the channel 31) of the heat reflecting layer 61a.

On the other hand, the heat generated by the upper heat source 63 first passes through the inside of the upper wall 34 and the insulating layer 62a to the back surface of the heat radiation layer 61b (the surface opposite to the channel 31 side), and the back surface is reflected toward the heat source 63. The heat reflecting layer 61a is not completely reflected and transmitted through the heat, and reaches the surface of the heat reflecting layer 61a (the surface on the side of the channel 31) where the surface is absorbed by the fluid L flowing through the channel 31.

As a result, the heat generated by the lower heat source 64 does not reach the upper heat source 63, and the heat generated by the upper heat source 63 does not reach the lower heat source 64. In other words, the upper and lower heat sources 63 and the heat source 64 are "thermally insulated" by the interposer 30a. Therefore, for example, even if the lower heat source 64 is a semiconductor element that consumes a large amount of power, the upper heat source 63 is a heat sensitive semiconductor element, and the interposer 30a having such a configuration can be interposed therebetween. To greatly reduce the thermal impact of the lower semiconductor components on the upper semiconductor components.

The laminated module 40b of the first embodiment of the present invention having the interposer 30a shown in Fig. 14 is shown in Figs. 15A and 15B.

As shown in FIG. 15A, the multilayer module 40b of the first embodiment includes a first semiconductor element 11b mounted on a substrate 10, an interposer 30a mounted thereon, and a second semiconductor element 12b mounted thereon.

A plurality of through electrodes 36 penetrating in the thickness direction are embedded in the side walls 22 on both sides of the interposer 30a. The through electrodes 36 are electrically connected (and mechanically connected) to the electronic circuits of the second semiconductor element 12b through the conductive balls 37, and are electrically connected (and mechanically connected) to the electronic circuits of the first semiconductor elements 11b through the conductive balls 38. ). That is, the electronic circuits of the first semiconductor element 11b and the second semiconductor element 12b are electrically connected to each other using the through electrodes 36 of the interposer 30a, and are mechanically connected (fixed) to each other. In this manner, the substrate 10 and the first semiconductor element 11b and the second semiconductor element 12b are electrically connected to each other and mechanically connected (fixed) to each other. Electrical connection and mechanical connection between the substrate 10 and the first semiconductor element 11b are performed using the conductive balls 15. A filler 16 is filled between the substrate 10 and the first semiconductor element 11b, between the first semiconductor element 11b and the interposer 30a, and between the interposer 30a and the second semiconductor element 12b.

In Fig. 15A, although the heat reflecting layer 61a and the heat radiation layer 61b of the interposer 30a are shown, the insulating layers 62a and 62b are omitted.

As shown in Fig. 15B, in the channel 31 of the interposer 30a, a fluid L flows as indicated by an arrow 35. Therefore, in Fig. 15A, the fluid L flows from the front side to the deep side of the paper. Since the heat generated in the first semiconductor element 11b is absorbed by the fluid L through the heat radiation layer 61b, it is discharged to the outside by the discharge of the fluid L. The heat that has passed through the heat radiation layer 61b and reaches the heat reflection layer 61a is also absorbed by the fluid L at that point, and is still absorbed by the fluid L. The out is released to the outside. Further, the heat generated in the second semiconductor element 12b is reflected upward by the heat reflecting layer 61a, thereby radiating heat to the outside. The heat that has not been completely reflected by the heat reflecting layer 61a and transmitted therethrough is absorbed by the fluid L flowing through the channel 31 through the heat reflecting layer 61a, and therefore is also discharged to the outside by the discharge of the fluid L.

The side wall 32 of the left and right sides of the interposer 30a divides the channel 31 together with the upper wall 33 and the lower wall 34, but is also a heat conduction path connecting the first semiconductor element 11b and the second semiconductor element 12b. In this case, one of the heat generated in the first semiconductor element 11b is transmitted to the second semiconductor element 12b via the side wall 32. However, by making the width of the side wall 32 small, or by constructing the side wall 32 with a material different from the upper wall 33 and the lower wall 34 (preferably a material having a small thermal conductivity), the side wall can be reduced. 32 heat conduction. Therefore, it is preferable to carry out as much as possible as described above.

The through electrode 36 formed on the side wall 32 is usually formed of a material having a large thermal conductivity such as metal. In this case, since heat conduction through the through electrode 36 is likely to occur, one of the heat generated in the first semiconductor element 11b reaches the second semiconductor element 12b, and the temperature of the second semiconductor element 12b may rise. However, by reducing the thickness of the through electrode 36 or modifying the design of the wiring layer to reduce the number of through electrodes 36, the amount of conduction heat can be reduced. Therefore, it is preferable to carry out as much as possible as described above.

As shown in FIG. 15A and FIG. 15B, the heat reflecting layer 61a disposed on the inner surface of the upper wall 33 of the channel 31 is not disposed on the entire inner surface of the upper wall 33, but is disposed on the inner surface of the upper wall 33 except for the peripheral region. section. Similarly, the heat radiation layer 61b disposed on the inner surface of the lower wall 34 of the channel 31 is not disposed on the lower wall 34. The inner surface is entirely disposed on the inner surface of the lower wall 34 except for the peripheral region. However, the arrangement of the heat reflective layer 61a and the heat radiation layer 61b is not limited to the arrangement illustrated in FIGS. 15A and 15B.

For example, (a) the heat radiation layer 61b may be disposed on the entire inner surface of the lower wall 34 and the inner surface of the side wall 32, and the heat reflection layer 61a may be disposed in a predetermined region on the inner surface of the upper wall 33. This configuration example is very suitable for considering only the case where the heat generated in the semiconductor element 11b is released to the fluid L. (b) The heat radiation layer 61b may be disposed in a predetermined region of the lower wall 33, and the heat reflection layer 61a may be disposed on the entire inner surface of the upper wall 33 and the entire inner surface of the side wall 32. (c) The heat radiation layer 61b may be disposed in a region of the inner surface of the lower wall 34 and the side wall 32 of the left side adjacent to the lower wall 34, and the heat reflection layer 61a may be disposed on the inner surface of the upper wall 33 and the side wall of the right side. The area of 32 close to the upper wall 33.

As is clear from Fig. 15B, the planar shape of the channel 31 of the interposer 30a described above is a straight line. However, the planar shape of the passage 31 is not limited thereto. For example, a planar shape as shown in FIGS. 16A and 16B can also be made.

(Laminated module of the second embodiment)

Fig. 16A is a cross-sectional explanatory view showing the structure of an interposer 30b used in the laminated module according to the second embodiment of the present invention.

In the intermediate layer 30b, the left and right side walls 32 project inward at the end portion of the upstream side and the downstream side of the passage 31 (the region of the upper and lower ends in Fig. 16A). That is, the width (sectional area) of the passage 31 is narrower at the end portion on the upstream side and the downstream side than at the center portion. As a result, the fluid L flowing into the passage 31 along the arrow 35a flows in through the narrow inlet of the passage 31, is guided to the wide central portion, and flows out to the outside through the narrow outlet.

In the interposer 30b, since the area of the through electrode 36 can be increased by projecting the left and right side walls 32 inward, it is particularly effective when the number of the through electrodes 36 is increased.

There are a number of variations with respect to the shape of the channel 31. For example, the longitudinal cross-sectional shape of the channel 31 (the cross-sectional shape along the plane perpendicular to the substrate 10) preferably includes a substantially square substantially rectangular shape (for example, a rectangle having a large length in the flow direction of the fluid and a small length in the height direction). The horizontal cross-sectional shape of the channel 31 preferably includes a substantially square substantially rectangular shape similarly to the longitudinal cross-sectional shape, but is not limited thereto. For example, either the inlet region of the fluid L into the passage 31 and the outlet region where the fluid L flows out, or the inlet region and the outlet region of the passage 31 may be narrower. Although the narrowed region is curved by the side wall 32, the through electrode 36 may be disposed in the curved region. This example is a configuration of the second embodiment.

The arrangement area of the inlet and the outlet of the passage 31 is preferably located at the central portion in the width direction of the passage 31, but is not limited thereto. For example, the inlet may be disposed to the left in the center portion in the width direction, and the outlet may be disposed on the right side. This example is a configuration of the third embodiment described later in Fig. 16B.

In the interposer 30b shown in Fig. 16A, the passage 31 is thinner at the inlet side end portion and the outlet side end portion, and the center portion of the passage 31 is thicker than the inlet side and the outlet side end portion (the sectional area is larger). With such a configuration, it is possible to simultaneously satisfy the requirements for increasing the area of the heat reflecting layer 61a and the heat radiation layer 61b to increase the heat radiation effect, and the two requirements for increasing the total number of the through electrodes 36.

(Layer module of the third embodiment)

Fig. 16B is a view showing a laminated module according to a third embodiment of the present invention; A cross-sectional explanatory view of the interposer 30c is used.

In the intermediate layer 30c, the side wall 32 of the left side protrudes inward at the end portion (the region of the upper end portion in FIG. 16B) on the downstream side of the passage 31, and the end portion of the right side wall 32 on the upstream side of the passage 31 (Fig. The region of the lower end portion of 16B protrudes inward. That is, a curved portion having a stepped curvature is formed in the center of the passage 31. As a result, the fluid L flowing into the passage 31 along the arrow 35a flows in through the narrow inlet of the passage 31, passes through the curved portion at the center, and then flows out to the outside through the narrow outlet. Therefore, the fluid L appears to flow in the oblique direction as to the passage 31.

In the interposer 30c, since the area of the through electrode 36 can be increased by projecting the left and right side walls 32 inward, it is particularly effective when the number of the through electrodes 36 is increased.

The shape of the passage 31 can be deformed in the same manner as described in the second embodiment.

Similarly, in the interposer 30c shown in Fig. 16B, the passage 31 is thinner at the inlet side end portion and the outlet side end portion, and the center portion of the passage 31 is thicker than the inlet side and the outlet side end portion (the sectional area is larger). With such a configuration, it is possible to simultaneously satisfy the requirements for increasing the area of the heat reflecting layer 61a and the heat radiation layer 61b to increase the heat radiation effect, and the two requirements for increasing the total number of the through electrodes 36.

(First example of manufacturing method of interposer used in the first embodiment)

Fig. 17 is a view showing a first example of a method of manufacturing the interposer 30a used in the multilayer module of the first embodiment. This manufacturing method can also be used for any of the interposers 30b and 30c used in the multilayer module of the second and third embodiments described above. Therefore, the method for manufacturing the interposer 30a is here. Give instructions.

First, as shown in Fig. 17 (a), a heat reflecting layer 61a is formed in a predetermined region on the inner surface (lower in the figure) of the plate-like upper wall 33. The upper wall 33 is preferably made of a material having a large thermal conductivity, but may be different. The heat reflecting layer 61a is formed, for example, by using a metal such as gold or aluminum by a vapor deposition method or the like.

Next, as shown in Fig. 17 (b), a heat radiation layer 61b is formed in a predetermined region on the inner surface (upper in the figure) of the plate-shaped lower wall 34. The heat radiation layer 61b is formed, for example, by a vapor deposition film of "gold black".

Here, the heat reflecting layer 61a and the heat radiation layer 61b are not formed to cover the entire inner surface of the upper wall 33 and the inner surface of the lower wall 34, but are selectively formed only in the central region, but are not limited thereto. The inner surface of the upper wall 33 and the inner surface of the lower wall 34 may be covered as a whole.

Next, as shown in Fig. 17 (c), the strip-shaped side walls 32 are formed so as not to overlap the heat radiation layer 61b in the peripheral regions on the right and left sides of the lower wall 34, respectively. The material of the side wall 32 is, for example, a resin, and is fixed to the inner surface (upper side in the drawing) of the lower wall 34 by an adhesive or the like.

Finally, as shown in Fig. 17 (d), the upper and lower side walls 32 are respectively fixed to the upper surfaces of the upper surfaces of the upper walls 33 by using an adhesive or the like. Thus, the interposer 30a having the passage 31 inside is manufactured. The fluid L flows through the inside of the passage 31 from the front side (or the rear side toward the front side) of the paper surface.

The adhesive or the like used in the first example of the production method is selected such that the airtightness of the passage 31 can be maintained for a long period of time in consideration of the adhesion to the object to be attached. For example, when the upper wall 33 and the lower wall 34 are formed of a single crystal raft, and the side wall 32 is formed of glass, the lower wall 34 is joined to the side wall 32, and thus the side wall 32 and the upper wall The bonding of 33 can use electrostatic bonding techniques. Since the sealing property of the electrostatic bonding is sufficiently high, the airtightness of the passage 31 can be maintained for a long period of time. Further, since the upper wall 33 and the lower wall 34 are made of a single crystal, it is also possible to form one or more wiring layers on the surfaces of the upper wall 33 and the lower wall 34 by a known technique.

Further, although not shown in Fig. 17, the through electrode 36 can be formed in the peripheral region of the interposer 30a. For example, a plurality of holes penetrating the upper wall 33 (for example, a single crystal crucible), the side wall 32 (for example, glass), and the lower wall 34 (for example, a single crystal crucible) are formed by a processing technique such as RIE (Reactive Ion Etching), and are penetrated therethrough. The inside of the hole may be such that the insulating film is attached or filled with a conductive material at the same time, whereby the through electrode 36 can be formed.

(Second example of manufacturing method of interposer used in the first embodiment)

Fig. 18 is a view showing a second example of the method of manufacturing the interposer 30a used in the multilayer module of the first embodiment.

First, as shown in Fig. 18 (a), a heat reflecting layer 61a is formed in a predetermined region on the inner surface (lower side in the figure) of the plate-like upper wall 33. The upper wall 33 is preferably made of a material having a large thermal conductivity, but may be different. The heat reflecting layer 61a is formed, for example, by using a metal such as gold or aluminum by a vapor deposition method or the like. This step is the same as the first example of the above-described manufacturing method.

Next, as shown in Fig. 18 (b), the lower wall 34 of the interposer 30a is integrally formed with the side wall 32. The side walls 32 are respectively located at peripheral regions of the left and right walls 34. A recess 34a is formed by the lower wall 34 and the side wall 32. Further, a heat radiation layer 61b is formed in a predetermined region (which is located in the recess 34a) on the inner surface (upper in the figure) of the lower wall 34. The heat radiation layer 61b is formed, for example, by a vapor deposition film of "gold black". This step is different from the first example of the above-described manufacturing method.

Such a configuration can be easily realized by selectively removing the central portion of the lower wall 34 to form the recess 34a and then forming the heat radiation layer 61b on the bottom surface of the recess 34a. If an example of the processing method is specifically shown, it is as follows. That is, a patterned photoresist layer is first formed on the upper side surface of the single crystal raft plate (having a thickness equal to the thickness of the side wall 32). Next, the photoresist layer is used as a mask, and the single crystal plate is selectively removed by a RIE method or the like to a predetermined depth. Thus, the recess 34a is formed in the central portion of the single crystal raft. Finally, the gold black layer is selectively formed using the vapor deposition method to be equal to the bottom surface of the recess 34a, as long as it is completed as the heat radiation layer 61b.

Here, although the heat radiation layer 61b does not cover the entire bottom surface of the recess 34a but is formed only in the center area, it is not limited to this. For example, the heat radiation layer 61b may cover the entire bottom surface of the recess 34a, or cover the entire bottom surface of the recess 34a and a part of the inner surface of the side walls 32, or cover the entire bottom surface of the recess 34a and the inner surface of the two side walls 32 as a whole.

Finally, as shown in Fig. 18 (c), the upper surfaces of the side walls 32 of the configuration shown in Fig. 18 (b) are fixed to the inner surface of the upper wall 33 (which has the heat reflecting layer 61a) shown in Fig. 18 (a). After the peripheral region, the interposer 30a having the passage 31 inside is manufactured. An epoxy-based adhesive material 67 or the like can be used for this fastening.

When both the upper wall 33 and the lower wall 34 having the side wall 32 are formed of a single crystal enthalpy and the heat radiation layer 61b is not formed on the upper end surface of the side wall 32 (this second example is for this purpose), the 矽-矽 can also be used. Thermal bonding proceeds to engage the upper wall 33 with the lower wall 34 of the side wall 32.

Since the passage 31 must be kept airtight, the aforementioned joining or the like or the thermal joining procedure should be appropriately selected to maintain the desired airtightness of the passage 31.

The second example shown in Fig. 18 is assumed to be a case where the upper wall 33 and the lower wall 34 having the side wall 32 are made of a single crystal. Therefore, the through electrode 36 can be formed on the side wall 32 by a known processing technique, and one or more electrical wiring layers can be formed on the upper wall 33 and the lower wall 34, respectively. The material of the upper wall 33 and the lower wall 34 having the side wall 32 is not limited to a single crystal crucible, and a resin or the like may be used.

Further, the configuration shown in Fig. 18(b) can also be directly used as the interposer 30a. In this case, although the top portion of the partitioning passage 31 does not exist, the function of the top portion is exerted by the lower surface of the semiconductor element 12b mounted on the upper portion of the interposer 30a. Further, the heat reflective layer 61a is formed on the lower side surface of the semiconductor element 12b.

Similarly, the intermediate layer 30a in which the bottom portion of the zoning passage 31 does not exist can be formed by vertically inverting the configuration of Fig. 18(b).

(The third example of the method for producing the interposer used in the first embodiment)

Fig. 19 is a view showing a third example of the method of manufacturing the interposer 30a used in the multilayer module of the first embodiment.

First, as shown in Fig. 19 (a), a plate-shaped base material 34' (here, a single crystal ruthenium substrate) as the lower wall 34 is prepared.

Next, as shown in Fig. 19 (b), a plurality of through electrodes 36 are formed in the peripheral regions of the base material 34' by a known method. More specifically, by etching by the RIE method, a plurality of through holes penetrating through the thickness direction of the base material 34' are formed, and the inside of the through holes is covered with an insulating layer (not shown), and the insulating layer is formed thereon. The inner side is covered or filled with a conductive material. By providing conductivity to each of the through holes as described above, the through electrode 36 can be easily produced. Thereafter, electrical connection pads 68 and 69 are formed on the front and back surfaces of the base material 34', respectively, electrically connected to the pair The electrode 36 should be penetrated.

Next, as shown in FIG. 19(c), the mother material 34' is selectively removed from the surface side by a patterned mask (not shown. This is composed of a photoresist film or the like) to form a recess 34a. . The formation step of the recess 34a is, for example, an anisotropic etching solution such as TMAH (tetramethylammonium hydroxide) or KOH (potassium hydroxide). In these etching liquids, since the etching speed is relatively low on a specific crystal plane (i.e., (111) plane), the edge of the recess 34a (that is, the slope from the bottom surface of the recess 34a to the surface of the base material 34') To expose the (111) face. In this way, the left and right side walls 32 are integrated into the lower wall 34.

Next, a heat radiation layer 61b is formed on the bottom surface of the recess 34a of the lower wall 34 by a known method. The state at this time is as shown in Fig. 19(c).

On the other hand, as shown in Fig. 19 (d), the upper wall 33 having a plurality of openings 33a for exposing the electrical connection pads 68 is formed. This upper wall 33 is easily formed by etching a plate-shaped base material (here, a single crystal germanium substrate) from the upper side thereof by RIE etching or the like. Thereafter, a heat reflecting layer 61a is formed in a predetermined region on the inner surface (lower in the figure) of the upper wall 33.

Finally, the lower wall 34 shown in FIG. 19(d) is placed on the lower wall 34 (having the through electrode 36 and the electrical connection pad 68 and the heat radiation layer 61b) as shown in FIG. 19(c) (this has a heat reflective layer). 61a) After the bonding, the interposer 30a having the configuration shown in Fig. 19(e) is obtained. This fixing uses an adhesive or a low melting point glass or the like. The passage 31 is formed by the recess 34a of the lower wall 34. The passage 31 must be airtight except for its inlet and outlet.

In the third example, since both the upper wall 33 and the lower wall 34 of the interposer 30a are formed of a single crystal germanium substrate, they can also be formed on the front and back sides of the interposer 30a. Wiring layer above layer.

Further, the configuration shown in Fig. 19(c) can also be directly used as the interposer 30a. In this case, although the top portion of the partitioning passage 31 does not exist, the function of the top portion is exerted by the lower surface of the semiconductor element 12b mounted on the upper portion of the interposer 30a. Further, the heat reflective layer 61a is formed on the lower side surface of the semiconductor element 12b.

Similarly, the intermediate layer 30a in which the bottom portion of the zoning passage 31 does not exist can be formed by vertically inverting the configuration of Fig. 19(b).

(Fourth example of manufacturing method of interposer used in the first embodiment)

Fig. 20 is a view showing a fourth example of the method of manufacturing the interposer 30a used in the multilayer module of the first embodiment.

The processes of the lower wall 34 (the through electrode 36, the electrical connection pad 68, and the heat radiation layer 61b) as shown in Figs. 20(a) to 20(c) are the same as those of the third example described above, and thus the description thereof is omitted.

On the other hand, as shown in Fig. 20 (d), the upper wall 33 is formed to be formed into the shape of the recess 34a of the lower wall 34. This upper wall 33 is easily formed by etching a plate-shaped base material (here, a single crystal germanium substrate) from the lower side thereof by RIE etching or the like. Thereafter, a heat reflecting layer 61a is formed in a predetermined region on the inner surface (lower in the figure) of the upper wall 33.

Finally, the upper wall 33 shown in FIG. 20(d) is placed so as to be embedded in the recess 34a of the lower wall 34 (which has the through electrode 36 and the electrical connection pad 68 and the heat radiation layer 61b) shown in FIG. 20(c). (This has the heat reflecting layer 61a) and fixed, the interposer 30a having the configuration shown in Fig. 20(e) is obtained. This fixing uses an adhesive or a low melting point glass or the like. In this state, inside the recess 34a, on the upper wall A gap is formed between the heat reflecting layer 61a of 33 and the heat radiating layer 61b of the lower wall 34, which is the passage 31. The passage 31 must be airtight except for its inlet and outlet.

Similarly, in the fourth example, since both the upper wall 33 and the lower wall 34 of the interposer 30a are formed of a single crystal germanium substrate, one or more wiring layers can be formed on the front and back surfaces of the interposer 30a.

In the fourth example, unlike the third example shown in FIG. 19, the upper wall 33 is substantially entirely embedded in the recess 34a of the lower wall 34, and the upper surface of the left and right side walls 32 is not covered by the upper wall 33. Therefore, the opening 33a of the third example is not required to be provided on the upper wall 33. Therefore, there is an advantage that the manufacturing technique is simpler than the third example shown in FIG.

Further, the configuration shown in Fig. 20(c) can also be directly used as the interposer 30a. In this case, although the top portion of the partitioning passage 31 does not exist, the function of the top portion is exerted by the lower surface of the semiconductor element 12b mounted on the upper portion of the interposer 30a. Further, the heat reflective layer 61a is formed on the lower side surface of the semiconductor element 12b.

Similarly, the intermediate layer 30a in which the bottom portion of the zoning passage 31 does not exist can be formed by vertically inverting the configuration of Fig. 20(c).

(Modification of the laminated module of the first embodiment)

Heretofore, the interposer layers 30a, 30b, and 30c having the heat reflective layer 61a and the heat radiation layer 61b and the buildup module 40b of the first embodiment in which the heat radiation layer 61a and the heat radiation layer 61b are incorporated have been described. However, the buildup module 40b is exemplified by these examples. In addition, various modifications are possible.

For example, power consumption of the second semiconductor element 12b located at the upper position When the power consumption of the lower first semiconductor element 11b is large, the positions of the heat reflection layer 61a and the heat radiation layer 61b can be replaced. In other words, the heat radiation layer 61b is disposed on the side of the second semiconductor element 12b having a large power consumption, and the heat reflection layer 61a is disposed on the side of the first semiconductor element 11b having a small power consumption. Further, the build-up module may have two or more semiconductor elements in which the semiconductor element is laminated in three or more layers and sandwiched between the intermediate layers (for example, on the upper surface of the interposer, a plurality of the semiconductor elements are arranged in the same plane. The composition of the semiconductor element). Regardless of the configuration, the heat reflecting layer 61a and the heat radiation layer 61b are thermally insulated between the semiconductor elements located above and below the interposer, and the heat is released from the heat radiation layer 61b to the fluid L to obtain a heat release effect. Points are common.

(The first example of the structure in which the cooling effect is increased by the thermal expansion of the fluid)

21A to 21C show the interposer 70 which increases the cooling effect of the semiconductor element by the thermal expansion of the fluid. 21A is an exploded perspective view of the interposer 70, FIG. 21B is a perspective view thereof, and FIG. 21C is a cross-sectional view thereof.

The interposer 30 used in the first to third embodiments can also have the same operational effects as the interposer 70 by changing the shape of the channel 31 to the channel 71 of the interposer 70.

As shown in FIGS. 21A to 21C, the interposer 70 is formed by combining a rectangular plate-shaped upper wall 73, a rectangular plate-shaped lower wall 74, and a pair of side walls 72a and 72b, by means of the four members. A passage 71 is formed inside. The pair of side walls 72a and 72b have a mirror-symmetric shape, and the width thereof is widened in a certain range from the upstream side end portion, and the width is narrowed in a certain range from the downstream side end portion. The width on the upstream side of the pair of side walls 72a and 72b is wide Between the wide portion and the narrow portion of the width, the width varies linearly. Therefore, the passage 71 partitioned by the upper wall 33, the lower wall 34, and the side walls 72a and 72b has a funnel-shaped planar shape, the width is relatively narrow in the upstream side region (small sectional area), and the width is relatively wide in the downstream side region (section large area).

The shape of the channel 71 is as shown clearly in Figure 21C. That is, although the height of the passage 71 is constant, the width thereof is not constant, and it is narrowed in the upstream side region and widened in the downstream side region. In the middle of the upstream side region and the downstream side region is a transition region in which the width of the channel 71 is gradually expanded.

The fluid L flows into the passage 71 of the interposer 70 from the relatively narrow upstream side opening (inlet) as indicated by an arrow 75a, and flows out from the relatively wide downstream side opening (outlet) as indicated by an arrow 75b. Since the width of the passage 71 is sharply expanded at a certain extent from the upstream end, the fluid L causes thermal expansion and the temperature is lowered while passing through the passage 71. As a result, the temperature inside the channel 71 is lowered. That is, since the interposer 70 has a function of cooling (endothermic) by itself, the cooling effect of the semiconductor element is improved as compared with the case where the thermal expansion is not utilized.

The structure shown in FIGS. 21A to 21C is referred to herein as a "heat-breaking expansion structure". The "thermal expansion structure" may be combined with the "radiation/reflection structure" of the first to third embodiments shown in FIG. In this way, the cooling (endothermic) effect generated by the fluid L can be further increased. In this case, the heat reflecting layer 61a is disposed on the upper wall 73 of the top portion of the forming passage 71, and the heat radiating layer 61b is disposed in the lower wall 74 of the bottom portion forming the passage 71. The arrangement and arrangement range of the heat reflecting layer 61a and the heat radiation layer 61b may be the same as those of the first to third embodiments described above.

Fig. 22A shows an example of a structure of a laminated module in which the interposer 70 having the above-described configuration and function is assembled to the bonding module shown in Figs. 2A and 2B. Figure 22B shows the channel 71 of the interposer 70.

The structure of the laminated module shown in FIG. 22A is the same as that of the bonding module shown in FIGS. 22A and 22B except that the interposer 70 is used instead of the interposer 20, and thus the description thereof is omitted. In Fig. 22A, the fluid L flows from the front side toward the rear side in the direction perpendicular to the paper surface.

In the package structure of FIG. 22A, an interposer 70 having a "heat-dissipating structure" is disposed between the lower first semiconductor element 11a and the upper second semiconductor element 12a. As shown in Fig. 22B, after the fluid L flows into the channel 71 from the narrow inlet of the interposer 70, the fluid L first enters the first region 71a having a wide width (a relatively large cross-sectional area) from the upstream end portion. The fluid L then passes through the transition region whose width is gradually increased, and enters the second region 71b having a narrow width (the cross-sectional area is relatively small) from the downstream end portion, and flows out from the passage 71 through the wide outlet. When the fluid L passes through the first region 71a, the pressure is rapidly lowered, so that it expands to the second region 71b while being thermally decompressed. As a result, the temperature of the fluid L is lowered.

When the first semiconductor element 11a and the second semiconductor element 12a are not heated, the temperature of the fluid L flowing out of the channel 71 is lower than the temperature of the fluid L when the channel 71 flows. When heat is generated in the first semiconductor element 11a and the second semiconductor element 12a, the heat is absorbed by the fluid L, so that heat from the first semiconductor element 11a and the second semiconductor element 12a can be efficiently released.

(Second example of the structure in which the cooling effect is increased by the thermal expansion of the fluid)

Fig. 23A shows a structure of a laminated module in which the interposer 70 shown in Figs. 21A to 21C is assembled to the through electrode module shown in Figs. 3A and 3B. Figure 23B shows the channel 71 of the interposer 70.

The structure shown in FIG. 23A is the same as the bonding module shown in FIGS. 3A and 3B except that the interposer 70 is used instead of the interposer 30, and thus the description thereof is omitted. In Fig. 23A, the fluid L flows from the front side to the rear side of the paper surface in a direction perpendicular to the paper surface.

In the same configuration as in the configuration of FIG. 23A, the interposer 70 having the "heat-dissipating structure" is disposed between the first semiconductor element 11b located at the lower position and the second semiconductor element 12b located at the upper position. In the same manner, after the first region 71a is passed, the pressure of the fluid L is rapidly lowered, and the second region 71b is reached while being thermally expanded. As a result, the temperature of the fluid L is lowered.

When there is no heat generation in the first semiconductor element 11b and the second semiconductor element 12b, the temperature of the fluid L when flowing out from the channel 71 is lower than the temperature of the fluid L when the channel 71 flows. When heat is generated in the first semiconductor element 11b and the second semiconductor element 12b, the heat is absorbed by the fluid L, so that heat from the first semiconductor element 11b and the second semiconductor element 12b can be efficiently released.

(Example of a configuration in which the cooling effect is increased by the thermal expansion of the fluid)

Figs. 24A and 24B and Figs. 25A and 25B show a modification of the first example and the second example in which the cooling effect is increased by the thermal expansion of the fluid described above. 24A and 24B show an example in which the channel 71 is one, and FIGS. 25A and 25B show an example in which the channel 71 is two.

In the figures, reference numeral 76 indicates that the width (sectional area) of the channel 71 is increased between the first region 71a having a narrow width (the cross-sectional area is relatively small) and the second region 71b having a wide width (the cross-sectional area is relatively large). The change), that is, the fluid L flowing into the passage 71 causes a thermal expansion and a transition region in which the temperature of the fluid L is lowered.

In the example of Fig. 24A(a), the fluid L entering the channel 71 from the upstream end portion first enters the first region 71a having a constant width (sectional area), and then the migration region 76 which is gradually increased in width (sectional area). The entry width (sectional area) is a constant second area 71b. Then, the outlet of the second region 71b is wide and wide, and flows out from the passage 71 to the outside. The fluid L is rapidly lowered in pressure in the migration region 76, and reaches the second region 71b while being thermally expanded. As a result, the temperature of the fluid L is lowered.

In the example of FIG. 24A(b), since the width (sectional area) is gradually increased from a certain upstream end portion of the first region 71a to the downstream end portion of the second region 71b, the fluid L is in the inflow passage. The moment of 71 (the first region 71a) causes thermal expansion.

In the example of FIG. 24A(c), the same as the example of FIG. 24A(a), since the position of the first region 71a on the upstream side is displaced in the width direction with respect to the center line of the channel 71 (interposer 70), the fluid L seems to flow in the oblique direction (in the figure, from the lower left to the upper right).

In the example of Fig. 24A(d), the first region 71a and the second region 71b are arranged closer to each other than the example of Fig. 24(a), in other words, the difference is that The change in the width (sectional area) of the region 71a to the second region 71b is more urgent. In this case, since the thermal expansion is more urgent than the example of Fig. 24(a), the temperature drop of the fluid L is greater.

In the example of Fig. 24A(e), the same as the example of Fig. 24A(a), the difference is that the width (section area) is provided between the first region 71a and the second region 71b, that is, the transition region 76. ) is smaller than the first region 71a (tightening portion). In this example, the fluid L is thermally expanded and expanded after the constricted portion is temporarily pressurized.

As shown in FIGS. 24A and 24B, the shape of the passage 71 is not particularly limited. The shape of the channel 71 can be determined depending on the position of the necessary migration region 76. That is, the transition region 76 is disposed in a heat-dissipating state in which the semiconductor elements (not shown in FIGS. 24A and 24B) having the upper and lower sides of the interposer 70 of the channel 71 are disposed.

In general, heat generation in a semiconductor element is not generated in all of the wafers constituting the semiconductor element. For example, an arithmetic circuit, an output circuit, and the like consume a large amount of power, and heat generation is mainly generated in a region (hot spot) in which such circuits are disposed. Therefore, it is preferable to arrange the migration region 76 in an area corresponding to such circuits (where the upper or lower bits overlap with such circuits). In this case, there is an advantage that heat is diffused to absorb heat from the fluid L before the wafer is fully integrated.

In the example of Fig. 25A(a), two channels 71 of the same shape are provided adjacent to each other. There are two inlets for the fluid L and two outlets for the fluid L. That is, the two channels 71 are independent of each other.

In the example of Fig. 25A(b), the channel 71 of one side (left side in the drawing) is the same as the example of Fig. 25A(a), but the other side (right side in the figure) is the channel 71, and the migration area 76 is downstream. Offset (upward in the figure) configuration. There are two inlets for the fluid L and two outlets for the fluid L. That is, the two channels 71 are independent of each other.

In the example of Fig. 25B(c), the flow inlets of the two channels of Fig. 25A(a) are combined to one place. After the channel 71 is divided into two inside the interposer 70, Connected to two outlets. Therefore, the two passages 71 are connected to each other inside the interposer 70.

In the example of Fig. 25B(d), similarly to Fig. 25B(c), the flow inlets of the two channels are combined into one, but the difference is in one of the channels 71 (left side in the figure). The migration region 76 is disposed offset on the upstream side (lower in the figure), and the other side (on the right side in the figure) is the channel 71, and the migration region 76 is offset on the downstream side (upward in the figure). Also in this example, the two channels 71 are connected to each other inside the interposer 70.

In FIGS. 25A and 25B, although the channel 71 and the migration region 76 are respectively shown as two examples, the number of the channel 71 and the migration region 76 is not limited. It is also possible to make the channel 71 and the migration region 76 three or more. It is also possible to arbitrarily select the shape and configuration of the shape of the channel 71 and the number of the migration regions 76 depending on the heat generation condition of the semiconductor element (for example, a region where there is a large heat generation).

(The first example of the manufacturing method of the interposer using the thermal expansion of the fluid)

26A and 26B show a first example of a method of manufacturing the above-described interposer 70 by thermal expansion of a fluid.

In this manufacturing method, first, as shown in FIGS. 26A(a) and 26B(a), a rectangular plate-shaped upper wall 73 is prepared. On the other hand, as shown in Fig. 26A (b) and Fig. 26B (b), a rectangular plate-shaped lower wall 74 is prepared, and left and right side walls 72a and 72b are formed on the surface. A recess 74a having a funnel-shaped planar shape is formed on the surface of the lower wall 74 by the side walls 72a and 72b.

Thereafter, as shown in Figs. 26A(c) and 26B(c), by bonding the upper wall 73 to the surfaces of the left and right side walls 72a and 72b, the intermediate structure having the thermal expansion structure shown in Figs. 21A to 21C is manufactured. Layer 70. The top of the recess 74a is The upper wall 73 is blocked to become the passage 71.

The material of the upper wall 73 and the lower wall 74 is preferably a single crystal crucible or the like, and the materials of the side walls 72a and 72b are preferably glass, single crystal germanium, resin, or photoresist (SU-8, etc.), but may be Materials other than those. The upper wall 73, the lower wall 74, and the side walls 72a and 72b are preferably joined by an adhesive or the like, but are not limited thereto. Other well-known techniques can also be used.

In addition, in FIG. 26A and FIG. 26B, although there are one channel 71, it is not limited to this, You may provide two or more channels 71 as illustrated in FIG. 24A and FIG. 24B and FIG. 25A and FIG.

Moreover, the upper wall 73 or the lower wall 74 can also be omitted. For example, the structures shown in FIGS. 26A(b) and 26B(b) are directly used as the interposer 70. In this case, since the interposer 70 is provided without the top (opening of the upper surface), the underside of the semiconductor element disposed on the upper side is used as the top. Similarly, as long as the structure shown in FIGS. 26A(b) and 26B(b) is reversed upside down, since the interposer 70 having no bottom (opening of the lower surface) is formed, the upper surface of the semiconductor element disposed on the lower side is used as the bottom.

(Second example of manufacturing method of interposer using thermal expansion of fluid)

27A and 27B show a second example of a method of manufacturing the above-described interposer 70 by thermal expansion of a fluid.

In the manufacturing method, first, as shown in Figs. 27A(a) and 27B(a), a rectangular lower wall 74 is formed integrally formed on the front and rear side walls 72a and 72b. A recess 74a having a funnel-shaped planar shape is formed on the surface side of the lower wall 74 by the side walls 72a and 72b. The material of the lower wall 74 and the side walls 72a and 72b is preferably a single crystal crucible, and the recess 74a is, for example, wet etched (including anisotropic etching) Or dry etching or the like is formed by selectively removing the surface side of the lower wall 74.

Then, as shown in FIGS. 27A(b) and 27B(b), after the upper wall 73 is joined to the surfaces of the left and right side walls 72a and 72b by using an adhesive or the like, the break shown in FIGS. 21A to 21C is produced. Interposer 70 of the thermally expandable structure. The upper surface of the recess 74a is blocked by the upper wall 73 to become the passage 71. When the upper wall 73 is glass, it can be joined/integrated by electrostatic bonding or the like. When the upper wall 73 is a single crystal crucible, it can be integrated by 矽/矽 bonding.

In addition, in FIG. 27A and FIG. 27B, although there are one channel 71, it is not limited to this, You may provide two or more channels 71 as illustrated in FIGS. 24A and 24B and FIGS. 25A and 25B.

Moreover, the upper wall 73 or the lower wall 74 can also be omitted. For example, the structures shown in FIGS. 27A(a) and 27B(a) are directly used as the interposer 70. In this case, since the interposer 70 is provided without the top (opening of the upper surface), the underside of the semiconductor element disposed on the upper side is used as the top. Similarly, if the structure shown in FIGS. 27A(b) and 27B(b) is reversed upside down, since the interposer 70 having no bottom (opening of the lower surface) is formed, the upper surface of the semiconductor element disposed on the lower side is used as the bottom.

(The third example of the manufacturing method of the interposer using the thermal expansion of the fluid)

28A and 28B show a third example of a method of manufacturing the above-described interposer 70 by thermal expansion of a fluid.

In this manufacturing method, first, as shown in FIGS. 28A(a) and 28B(a), a rectangular plate-shaped lower wall 74 having pads 78 and 79 for electrical connection and through electrodes 77 is prepared. A pad 78 is formed on the surface of the lower wall 74, and a pad 79 is formed on the back surface of the lower wall 74. Each of the through electrodes 77 penetrates the lower wall 74 to reach the corresponding pads 78 and 79. As is clear from FIG. 28B(a), the pads 78 and 79 and the through electrode 77 are formed only in the vicinity of the upstream side end portion of the channel 71 so as not to overlap the channel 71. The lower wall 74 is preferably formed as a single crystal ruthenium.

Next, as shown in Figs. 28A(b) and 28B(b), the surface side of the lower wall 74 is selectively removed to form a recess 74a having a funnel-shaped planar shape. At this time, a pair of side walls 72a and 72b are formed on the left and right sides of the recess 74a by the remaining portion of the lower wall 74. The recess 74a does not overlap the pads 78 and 79, and the pads 78 and 79 and the through electrode 77 are disposed on the side walls 72a and 72b. The lower wall 74 can be formed by, for example, wet etching (including anisotropic etching) or dry etching, as long as it is made of a single crystal.

Thereafter, as shown in FIGS. 28A(c) and 28B(c), a rectangular plate-shaped upper wall 73 having a plurality of openings 73a is prepared. The opening 73a is disposed at a position of the lower wall 74 corresponding to each of the pads 78. The upper wall 73 can be formed by, for example, wet etching (including anisotropic etching) or dry etching, as long as it is made of a single crystal.

Finally, as shown in FIGS. 28A(d) and 28B(d), the upper wall 73 is joined to the lower wall 74 by using an adhesive or the like, and as long as both the upper wall 73 and the lower wall 74 are made of a single crystal, it can also be矽/矽 joint to join. In the case where the upper wall 73 is glass, it can be joined by electrostatic bonding or the like.

In addition, in FIG. 28A and FIG. 28B, although there are one channel 71, it is not limited to this, You may provide two or more channels 71 as illustrated in FIGS. 24A and 24B and FIGS. 25A and 25B.

Moreover, the upper wall 73 or the lower wall 74 can also be omitted. For example, the structures shown in FIGS. 28A(b) and 28B(b) are directly used as the interposer 70. This situation Next, since the interposer 70 having no top (opening on the top) is used, the underlying semiconductor element disposed on the upper side is used as the top. Similarly, as long as the structure shown in FIGS. 28A(b) and 28B(b) is reversed upside down, since the interposer 70 having no bottom (opening of the lower surface) is formed, the upper surface of the semiconductor element disposed on the lower side is used as the bottom portion.

(Example of the structure of the additional substrate and the cover of the laminated module)

Fig. 29 shows a configuration example (construction structure example) of the laminated module additional substrate 10 and the cover 82 shown in Fig. 23A. A laminated module 80 having the configuration shown in FIG. 23A is mounted on the substrate 10, and the cover 82 is fixed to the substrate 10 by using the leg portion 85 of the cover 82 so as to include the entire laminated module 80. The cover 82 has an inlet 83 and an outlet 84. The inlet 83 is disposed on the upstream side of the interposer 70 having the "heat-dissipating expansion structure" (the side where the fluid L flows in), and the outlet 84 is disposed on the downstream side of the interposer 70 (the side from which the fluid L flows out).

In FIG. 29, it is exemplified that the first semiconductor element 11 disposed under the build-up module 80 and the second semiconductor element 12 disposed on the upper layer of the build-up module 80 and the interposer 70 disposed between the two semiconductors 11 and 12 are not equal in size. The situation. However, there is no limit to these size relationships. Further, two or more of the first semiconductor elements 11 may be disposed below the interposer 70, or two or more of the second semiconductor elements 12 may be disposed on the interposer 70, or may have more The number of segments is formed (the stack module 80 of Fig. 29 is composed of three segments).

The configuration example of Fig. 29 can also be applied to the case where the laminated module 80 shown in Fig. 22A is attached to the substrate 10 and the cover 82. In this case, only the build-up module 80 replaces the joint module, and the other configuration is the same.

(fluid supply to laminated modules)

Fig. 30 is a view showing an example of a fluid supply system for the laminated module 80 of the present invention.

In Fig. 30, the inlet 83 of the cover 82 is opened on the upstream side of the passage 71 of the intermediate layer 70 of the build-up module 80, and the outlet 84 of the cover 82 is open on the downstream side. 90 is the compressor and 91 is the power source (usually the motor) that drives the compressor 90. The compressor 90 is connected to the inlet 83 via a pipe T3. The outlet 84 is connected to the compressor 90 via a pipe T4.

The fluid (here, gas) L pressurized and compressed by the compressor 90 is guided to the inlet 83 through the pipe T3, and enters the upstream side space inside the cover 82. Thereafter, the fluid L moves through the passage 71 of the interposer 70 to the downstream side space inside the cover 82. Then, it flows out from the downstream side space to the outside via the outlet 84. The fluid L thus discharged flows back to the compressor 90 via the pipe T4. Since the fluid L flowing through the pipe T4 absorbs heat generated in the build-up module 80, the temperature thereof becomes high, and further, since the temperature of the fluid L rises by pressurization (heat-breaking compression) in the compressor 90, It is preferable that the compressor 90 is attached to a function of lowering the temperature of the fluid L (fluid cooling function). However, the fluid cooling function is not required and can be omitted. The reason for this is that, for example, when the pipes T3 and T4 are placed in a low temperature environment, the fluid cooling function is also unnecessary.

In the case where a liquid is used as the fluid L, a pump is used instead of the compressor 90.

According to the present invention, it is possible to apply a laminated module (multilayer semiconductor element) and a structure in which it is necessary to suppress an increase in the operating temperature of a semiconductor element having a large power consumption to stabilize the operation. The invention is not limited to the half with the electronic circuit as the main body Conductor elements or modules can also be widely applied to other types of large power semiconductor components or modules (such as light-emitting components, light-emitting component modules, optical communication components, optical communication modules, etc.). Further, in the μ TAS (Micro Whole Process Analysis System) which is directed to the miniaturization of the analysis machine, it is also applicable to the field in which the fluid to be measured flows into the minute flow path.

10‧‧‧Substrate

11, 11a, 11b‧‧‧1st semiconductor component

12, 12a, 12b‧‧‧ second semiconductor component

14‧‧‧through electrode

15‧‧‧Electrical sphere

16‧‧‧Filling

17‧‧‧Adhesive

20‧‧‧Intermediary

21‧‧‧ channel

22‧‧‧ side wall

23‧‧‧Upper wall

24‧‧‧ Lower wall

25‧‧‧ arrow

30, 30a, 30b, 30c‧ ‧ intermediary

31‧‧‧ channel

32‧‧‧ side wall

33‧‧‧Upper wall

33a‧‧‧ openings

34‧‧‧The lower wall

34’‧‧‧Material

35, 35a‧‧ arrow

36‧‧‧through electrodes

37, 38‧‧‧ Conductive spheres

40, 40a, 40b‧‧‧ layered modules

41‧‧‧ channel

42‧‧‧ Cover

42a, 42b‧‧‧ cover half

43‧‧‧ entrance

44‧‧‧Export

45‧‧‧foot

46‧‧‧Installation Department

47a, 47b, 48, 49‧‧‧ arrows

50‧‧‧Internal space

51, 51a‧‧‧堰

52‧‧‧ Cover

52a‧‧ hood half

52b‧‧‧ cover half

55‧‧‧Next layer

56‧‧‧Resin

57‧‧‧ Cover

58‧‧‧ entrance

59‧‧‧Export

61a‧‧‧Hot reflective layer

61b‧‧‧Thermal radiation layer

62a, 62b‧‧‧ insulation

63, 64‧‧‧ heat source

63a‧‧‧arrow

67‧‧‧Next material

68‧‧‧Electrical connection pads

70‧‧‧Intermediary

71‧‧‧ channel

71a‧‧‧1st area

71b‧‧‧2nd area

72a‧‧‧ Sidewall

73‧‧‧Upper wall

73a‧‧‧ openings

74‧‧‧The lower wall

75a, 75b‧‧‧ arrows

76‧‧‧Migration area

77‧‧‧through electrodes

78, 79‧‧‧ pads

80‧‧‧Layered modules

82‧‧‧ Cover

83‧‧‧ Entrance

84‧‧‧Export

85‧‧‧ feet

90‧‧‧Compressor

91‧‧‧Power source

G‧‧‧ gap

L‧‧‧ fluid

L2‧‧‧Second fluid

P‧‧‧ pump

T1, T2, T3, T4‧‧‧ piping

1A is a cross-sectional explanatory view showing a structure in which a build-up module (joining module) which is electrically connected by using a thin metal wire is mounted on a substrate.

1B is a cross-sectional explanatory view showing a structure in which a build-up module (through electrode module) which is electrically connected by using a through electrode is mounted on a substrate.

Fig. 2A is a cross-sectional explanatory view showing a structure of a laminated module (joining module) of Fig. 1A in which an interposer having a channel is added.

Figure 2B is a cross-sectional view taken along line A-A of the interposer shown in Figure 2A.

Fig. 3A is a cross-sectional explanatory view showing a structure of a laminated module (through electrode module) of Fig. 1B in which an interposer having a channel is added.

Figure 3B is a cross-sectional view taken along line B-B of the interposer shown in Figure 3A.

4A is a cross-sectional explanatory view showing a structure in which a cover body of a build-up layer module (through electrode module) is additionally provided in the structure of FIG. 3A and a fluid is supplied to the inside.

Fig. 4B is a cross-sectional view taken along line C-C of the structure of Fig. 4A.

FIG. 5A shows the first structure of the structure in which the space between the cover and the build-up module (through electrode module) is added to the structure of FIG. 4A. An illustration of a section of the example.

Figure 5B is a cross-sectional view taken along line C-C of the structure of Figure 5A.

FIG. 6 is a perspective view showing a state in which the structure of the structure in FIG. 4A is added to the structure in which the space between the cover and the laminated module is separated, and the first example of the structure is attached to the substrate.

Fig. 7A is a perspective view showing a procedure for forming a crotch portion in a second example of a structure in which a structure for partitioning a space between a cover and a laminated module is added to the structure of Fig. 4A.

Fig. 7B is a perspective view showing a procedure for forming a crotch portion in a second example of a structure in which a structure for partitioning a space between a cover and a laminated module is added to the structure of Fig. 4A, and is followed by Fig. 7A.

Fig. 8A is a cross-sectional explanatory view showing a procedure for forming a crotch portion in a second example of a structure in which a structure for separating a space between a cover and a laminated module is added to the structure of Fig. 4A.

8B is a cross-sectional explanatory view showing a procedure for forming a crotch portion in a second example of a structure in which a structure for separating a space between a cover and a laminated module is added to the structure of FIG. 4A, and is a follow-up view of FIG. 8A. .

Fig. 9 is a perspective view showing a third example of a structure in which a structure for partitioning a space between a cover and a build-up module is added to the structure of Fig. 4A, and is shown in a state before the substrate is mounted on the cover.

FIG. 10A is a perspective view showing a manufacturing method of a fourth example of a structure in which a structure for separating a space between a cover and a build-up module is added to the structure of FIG. 4A.

Fig. 10B shows the structure and structure of Fig. 4A added with a cover and a laminate A perspective view of the manufacturing method of the fourth example of the structure of the space partition between the modules is followed by FIG. 10A.

Fig. 11A is a cross-sectional explanatory view showing a manufacturing method of a fourth example of a structure in which a structure for separating a space between a cover and a laminated module is added to the structure of Fig. 4A.

Fig. 11B is a cross-sectional explanatory view showing a manufacturing method of a fourth example in which the structure of the structure of Fig. 4A is added with a space separating the space between the cover and the laminated module, and is followed by Fig. 11A.

Fig. 12A is a perspective view showing a manufacturing method of a fifth example of a structure in which a structure for partitioning a space between a cover and a laminated module is added to the structure of Fig. 4A.

Fig. 12B is a perspective view showing a manufacturing method of a fifth example in which the structure of the structure of Fig. 4A is added with a space separating the space between the cover and the laminated module, and is followed by Fig. 12A.

Fig. 13A is a cross-sectional explanatory view showing a manufacturing method of a fifth example of a structure in which a structure for separating a space between a cover and a laminated module is added to the structure of Fig. 4A.

Fig. 13B is a cross-sectional explanatory view showing a manufacturing method of a fifth example in which the structure of the structure of Fig. 4A is added with a space separating the space between the cover and the laminated module, and is followed by Fig. 13A.

Fig. 13C is a cross-sectional explanatory view showing a manufacturing method of a fifth example in which the structure of the structure of Fig. 4A is added with a space separating the space between the cover and the laminated module, and is followed by Fig. 13B.

Figure 13D shows the structure of Figure 4A with the addition of a cover and a laminate. The cross-sectional explanatory view of the manufacturing method of the fifth example of the structure of the space partition between the modules is followed by FIG. 13C.

Fig. 14 is a cross-sectional explanatory view showing the configuration of an interposer having a radiation/reflection structure in a channel used in the laminated module according to the first embodiment of the present invention.

Fig. 15A is a cross-sectional explanatory view showing a build-up module (configuration structure) of the first embodiment of the present invention using the interposer of Fig. 14;

Figure 15B is a cross-sectional view taken along line D-D of the interposer shown in Figure 15A.

Fig. 16 is a cross-sectional explanatory view showing an interposer structure in which a channel used in a laminated module according to a second embodiment of the present invention has a radiation/reflection structure.

Fig. 16B is a cross-sectional explanatory view showing a configuration of an interposer having a radiation/reflection structure in a channel used in the laminated module according to the third embodiment of the present invention.

Fig. 17 is a cross-sectional explanatory view showing a first example of a method of manufacturing an interposer used in the laminated module according to the first embodiment of the present invention.

FIG. 18 is a cross-sectional explanatory view showing a second example of the method of manufacturing the interposer used in the multilayer module according to the first embodiment of the present invention.

Fig. 19 is a cross-sectional explanatory view showing a third example of the method of manufacturing the interposer used in the multilayer module according to the first embodiment of the present invention.

Fig. 20 is a cross-sectional explanatory view showing a fourth example of the method of manufacturing the interposer used in the laminated module according to the first embodiment of the present invention.

Fig. 21A is an exploded perspective view of the interposer using the thermal expansion of the fluid to increase the cooling effect.

Figure 21B is a perspective view of the interposer of Figure 21A.

Fig. 21C(a) is a cross-sectional explanatory view showing a change in a cross-sectional area of a flow path of the interposer of Fig. 21A, and (b) is a plan view.

Fig. 22A is a cross-sectional explanatory view showing a first example of a structure of a laminated module in which the interposer layer and the build-up module (joining module) of Fig. 21A are combined.

Figure 22B is a cross-sectional view taken along line E-E of Figure 22A.

FIG. 23A is a cross-sectional explanatory view showing a second example of a structure of a laminated module in which the interposer layer of FIG. 21A and the build-up module (through electrode module) are combined.

Figure 23B is a cross-sectional view taken along line F-F of Figure 23A.

Fig. 24A is a plan explanatory view showing a modification of the interposer (see Figs. 21A to 21C) in which the cooling effect is increased by the thermal expansion of the fluid.

Fig. 24B is a plan explanatory view showing another modification of the interposer (see Figs. 21A to 21C) in which the cooling effect is increased by the thermal expansion of the fluid.

Fig. 25A is a plan explanatory view showing still another modification of the interposer (see Figs. 21A to 21C) in which the cooling effect is increased by the thermal expansion of the fluid.

Fig. 25B is a plan explanatory view showing still another modification of the interposer (see Figs. 21A to 21C) in which the cooling effect is increased by the thermal expansion of the fluid.

Fig. 26A is a cross-sectional explanatory view showing a first example of a manufacturing method of the interposer (see Figs. 21A to 21C) in which the cooling effect is increased by the thermal expansion of the fluid.

Fig. 26B is a perspective view showing a first example of the manufacturing method of the interposer (see Figs. 21A to 21C) in which the cooling effect is increased by the thermal expansion of the fluid.

Fig. 27A is a cross-sectional view showing a second example of the manufacturing method of the interposer (see Figs. 21A to 21C) in which the cooling effect is increased by the thermal expansion of the fluid. Figure.

Fig. 27B is a perspective view showing a second example of the manufacturing method of the interposer (see Figs. 21A to 21C) in which the cooling effect is increased by the thermal expansion of the fluid.

Fig. 28A is a cross-sectional explanatory view showing a third example of the manufacturing method of the interposer (see Figs. 21A to 21C) in which the cooling effect is increased by the thermal expansion of the fluid.

Fig. 28B is a perspective view showing a third example of the manufacturing method of the interposer (see Figs. 21A to 21C) in which the cooling effect is increased by the thermal expansion of the fluid.

Fig. 29 is a perspective view showing a state in which the cover is attached to the substrate in the second example of the structure of Fig. 23A.

Fig. 30 is a system diagram showing an example of fluid supply in a structure in which an interposer (see Figs. 21A to 21C) in which a cooling effect is increased by a thermal expansion of a fluid and a laminated module is used.

Fig. 31 is a cross-sectional explanatory view showing a structure (and a cooling method) of a conventional laminated module.

10‧‧‧Substrate

11b‧‧‧1st semiconductor component

12b‧‧‧2nd semiconductor component

14‧‧‧through electrode

15‧‧‧Electrical sphere

16‧‧‧Filling

30a‧‧‧Intermediary

31‧‧‧ channel

32‧‧‧ side wall

33‧‧‧Upper wall

34‧‧‧The lower wall

36‧‧‧through electrodes

37, 38‧‧‧ Conductive spheres

40b‧‧‧Layered module

61a‧‧‧Hot reflective layer

61b‧‧‧Thermal radiation layer

Claims (6)

A laminated module comprising: an interposer; one or more first semiconductor elements disposed on one side of the interposer; and one or more disposed on an opposite side of the interposer from the first semiconductor element The second semiconductor element: the interposer has at least one of a body having a passage through which the fluid flows, and a heat radiation layer and a heat reflection layer disposed in a predetermined region of the body defining the inner wall of the passage. The multilayer module according to the first aspect of the invention, wherein the heat radiation layer of the interposer is disposed on a side of the first semiconductor element having a relatively large amount of heat generation. The laminated module according to claim 1, wherein the heat reflecting layer of the interposer is disposed on a side of the second semiconductor element having a relatively small amount of heat generation. The laminated module according to claim 1, wherein the heat radiation layer of the interposer is disposed on a side of the first semiconductor element having a relatively large amount of heat generation, and the heat reflection layer of the interposer is disposed at a relative amount of heat generation The side of the second semiconductor element is small. An interposer comprising: a body having a passage through which a fluid flows; and at least one of a heat radiation layer and a heat reflection layer disposed in a predetermined region of the inner wall of the passage that defines the passage. The interposer of claim 5, wherein the heat radiation layer is disposed on a side of the semiconductor element having a relatively large amount of heat generation, and the heat reflection layer is disposed on a side of the semiconductor element having a relatively small amount of heat generation.