TW201302315A - Coating device - Google Patents

Abstract

A coating apparatus including: a coating part coating a liquid material including an oxidizable metal on a substrate, a pretreatment part conducting pretreatment to the substrate before the liquid material is coated on the substrate, and a connecting part which includes a connecting space which connects with a coating space in which the liquid material is coated by the coating part and a pretreatment space in which the pretreatment is conducted by the pretreatment part, and which is provided to be able to adjust an atmosphere inside the connecting space so that the atmosphere inside the connecting space becomes an inert gas atmosphere.

Description

Coating device

The invention relates to a coating device.

This application is based on Japan's Japanese Patent Application No. 2011-033369, filed on Feb. 18, 2011, and claims priority.

CIGS using an elemental chalcogenide semiconductor material containing a metal such as Cu, Ge, Sn, Pb, Sb, Bi, Ga, In, Ti, Zn, and the like, and a combination of S, Se, Te, and the like A solar cell or a CZTS-type solar cell is attracting attention as a solar cell having high conversion efficiency (for example, refer to Patent Document 1 to Patent Document 3). The CIGS type solar cell is a light absorbing layer (photoelectric conversion layer), and is a film formed using four types of semiconductor materials such as Cu, In, Ga, and Se. The CZTS type solar cell is a light absorbing layer (photoelectric conversion layer), and is a film formed using four types of semiconductor materials such as Cu, Zn, Sn, and Se. As a configuration of such a solar cell, it is known that a rear surface electrode made of molybdenum or the like is provided on a substrate formed of, for example, glass, and the light absorbing layer is disposed on the back surface electrode.

The CIGS type solar cell or the CZTS type solar cell is easier to install or transport the curved surface than the conventional solar cell, since the thickness of the light absorbing layer can be thinned. Therefore, as a high-performance, flexible solar cell, it is expected to be applied to a wide range of fields. As a light absorption In the method of the layering method, a method of forming a vapor deposition method or a sputtering method is known (for example, refer to Patent Document 2 to Patent Document 5).

[Previous Technical Literature] [Patent Document]

[Patent Document 1] Japanese Patent Laid-Open No. Hei 11-340482

[Patent Document 2] Japanese Laid-Open Patent Publication No. 2005-51224.

[Patent Document 3] Japanese Patent Publication No. 2009-537997

[Patent Document 4] Japanese Patent Laid-Open No. 1-231313

[Patent Document 5] Japanese Patent Laid-Open No. Hei 11-273783

On the other hand, the inventors of the present invention proposed a method of applying the above-described semiconductor material to a substrate by liquid coating as a method of forming a light absorbing layer. The following problems are mentioned in the case where the light absorbing layer is formed by application of a liquid.

When a metal oxide film or the like is formed on the surface of the back electrode (for example, a molybdenum film), the liquid material is protected on the surface of the metal oxide film, and the coating film is not uniformly formed on the substrate. Accordingly, in order to uniformly form the coating film on the substrate, it is effective for the base substrate to be treated before the removal of the oxide film before the application of the liquid. However, when the substrate from which the oxide film is removed is transferred to the coating position by the pretreatment, the surface of the substrate is again oxidized during transportation depending on the environment of the transport path. This problem is not limited to the removal of the oxide film of the back electrode on the substrate, but is also assumed in the case of performing other pretreatments.

In view of the above, the object of the present invention is to provide A coating device and a coating method capable of suppressing a change in the state of the surface of the substrate between the coating and the coating.

A coating apparatus according to the present invention is characterized by comprising: applying a liquid body containing a metal having oxidizable properties to a coating portion of a substrate, and pre-treating the substrate before applying the liquid material a pre-processing unit having a connection space for applying the liquid material via the application portion and a connection space for performing the pre-treatment processing space via the pre-processing unit, and being adjustably provided as the connection space The environment is a connection to the environment that is an inert gas.

According to the present invention, the environment in which the coating space for applying the liquid material via the application portion is connected to the processing space before the pretreatment is processed via the pretreatment portion, and the environment in which the connection space is adjustably provided is provided. Since the connection portion of the environment which is an inert gas is formed, the connection space from the pretreatment space to the coating space can be used as an environment of an inert gas. Thereby, it is possible to suppress a change in the state of the surface of the substrate from the previous treatment of the substrate to between coatings.

The coating apparatus described above is characterized in that it further includes a first supply unit that supplies the inert gas to the connection space.

According to the present invention, since the first supply portion for supplying the inert gas to the connection space is further provided, the inert gas can be directly supplied to the connection space. Thereby, the connection space can be efficiently used as an environment of an inert gas.

The coating apparatus described above is characterized in that it further includes a second supply unit that supplies the inert gas to the pretreatment space.

According to the present invention, since the inert gas is supplied to the pretreatment air The second supply unit can supply the inert gas to the connection space by the pretreatment space. In this case, since the pretreatment space can also serve as an environment for the inert gas, the environment of the inert gas can be made continuous in the pretreatment space and the connection space.

The coating apparatus described above is characterized in that it further includes a third supply unit that supplies the inert gas to the coating space.

According to the present invention, since the third supply unit that supplies the inert gas to the coating space is further provided, the inert gas can be supplied to the connection space in relation to the coating space. In this case, since the coating space can also serve as an environment for the inert gas, the environment of the inert gas can be made continuous in the connection space and the coating space.

The coating apparatus described above is characterized in that it further includes a processing chamber portion surrounding at least one of the coating space, the pretreatment space, and the connection space.

According to the present invention, since the processing chamber portion surrounding at least one of the coating space, the pretreatment space, and the connection space is further provided, the environment of the coating space, the pretreatment space, and the connection space can be easily adjusted.

The above coating apparatus is characterized in that the processing chamber portion has a lock load chamber surrounding the connection space.

According to the present invention, the processing chamber portion has a lock load chamber surrounding the connection space, and the environment of the connection space can be efficiently adjusted.

The coating apparatus described above is characterized in that it further includes a suction portion that attracts the coating space, at least one of the pretreatment space and the connection space.

According to the present invention, it is possible to more precisely adjust the environment of each space by further attracting the suction portion of the coating space, the pretreatment space, and the connection space.

The coating apparatus described above is characterized in that it further includes a conveying unit that conveys the substrate between the pretreatment space and the connection space in the coating space.

According to the present invention, since the substrate is transported between the pretreatment space and the connection space in the coating space, the substrate is transported from the pretreatment space to the coating space to be an inert gas atmosphere. The connection space. Thereby, it is possible to suppress a change in the state of the surface of the substrate during the conveyance.

The coating apparatus described above is characterized in that the substrate is formed with a metal on the surface.

According to the present invention, it is possible to prevent the formation of a metal oxide film on the metal surface between the pre-treatment of the substrate on which the metal is formed on the surface and between the coatings. Thereby, the liquid material can be uniformly applied to the surface of the substrate.

The above coating apparatus is characterized in that the liquid system contains hydrazine.

According to the present invention, in the case of applying a liquid containing hydrazine, it is possible to prevent deterioration of the state of the amide by changing the state of the surface of the substrate after the treatment with respect to the substrate and between the coatings. .

The coating apparatus described above is characterized in that a back surface electrode is provided on the substrate, and the pretreatment is to remove an oxide film of an oxide film from the back surface electrode. Remove the treatment.

According to the present invention, as the pretreatment, when the oxide film removal treatment for removing the oxide film from the back surface electrode on the substrate is performed, the wettability of the liquid material can be improved.

The coating apparatus described above is characterized in that the oxide film removal treatment system includes at least one of a treatment of the substrate via an alkaline solution and a process of sputtering the substrate with an inactive atom.

According to the present invention, as the oxide film removing treatment, at least one of the treatment of the substrate via the alkaline solution and the sputtering of the substrate using the inactive atoms is performed, and the oxide film can be surely removed from the substrate.

The coating apparatus described above is characterized in that at least one of the treatment of the substrate via the alkaline solution or the treatment via the ammonia vapor is performed on the substrate.

According to the present invention, at least one of the treatment of the substrate via the alkaline solution or the treatment via the ammonia vapor is performed, and the oxide film can be reliably removed from the substrate.

The above coating apparatus is characterized in that the pretreatment is a washing treatment for washing the substrate.

According to the present invention, as the pretreatment, the cleaning process of the cleaned substrate is performed, so that the substrate can be cleanly held while the coating process is performed. Thereby, the film quality can be improved.

According to the present invention, it is possible to suppress a change in the state of the surface of the substrate after the treatment with respect to the substrate and between the coatings.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

In the following drawings, the description of the configuration of the coating apparatus according to the present embodiment will be described using the XYZ coordinate system for the sake of simplicity of the marking. In the XYZ coordinate system, the left-right direction in the figure is referred to as the X direction, and the direction perpendicular to the X direction in the plan view is referred to as the Y direction. The direction perpendicular to the plane including the X-axis and the Y-axis is expressed as the Z direction. Each of the X direction, the Y direction, and the Z direction is a configuration in which the direction of the arrow in the figure is the + direction, and the direction opposite to the direction of the arrow is the - direction.

Fig. 1 is a schematic view showing the configuration of a coating device CTR according to the present embodiment.

As shown in FIG. 1, the coating apparatus CTR has a substrate loading portion LDR, a preprocessing portion PRE, a connecting portion CNE, and a substrate processing portion PCS. The coating device CTR is a device for applying a liquid to the substrate S.

In the present embodiment, as the liquid material applied to the substrate S, for example, a solvent such as hydrazine is used, and copper (Cu), indium (In), gallium (Ga), selenium (Se) or copper (Cu) is contained. A liquid composition of a metal material which is easily oxidizable, such as zinc (Zn), tin (Sn), or selenium (Se). This liquid composition contains a metal material constituting a light absorbing layer (photoelectric conversion layer) of a CIGS or CZTS type solar cell. In the present embodiment, as the other liquid material, a liquid composition in which sodium (Na) is dispersed in a solvent such as hydrazine is used. This liquid composition is included to ensure CIGS or CZTS solar cells A substance having a crystal grain size of the light absorbing layer. Of course, as the liquid material, a liquid material in which another oxidizable metal is dispersed may be used. In the present embodiment, as the substrate S, for example, a plate-shaped member made of glass or resin is used. In the present embodiment, molybdenum is formed by sputtering on the substrate S as a back surface electrode. Of course, the back electrode may be configured to use another conductive material.

The substrate loading portion LDR has a lock load chamber CBL. The lock load chamber CBL has a storage chamber RML, a substrate transfer inlet ENL, and a substrate discharge port EXL. The storage chamber RML is divided by the lock load chamber CBL, and is formed to accommodate the size of the substrate S. The substrate transfer inlet ENL and the substrate transfer port EXL are formed in the opening of the lock load chamber CBL. The substrate transfer inlet ENL and the substrate transfer port EXL are formed to have a size through which the substrate S can pass. The substrate transfer inlet ENL is formed on the wall portion on the -X side of the lock load chamber CBL, and is connected to, for example, the outside of the coating device CTR. The substrate transfer port EXL is formed on the wall portion on the +X side of the lock load chamber CBL.

An inert gas recovery pipe 90a is connected to the storage chamber RML. The inert gas recovery pipe 90a is connected to the pump 31 by the connection portion 90. Further, an inert gas supply pipe 95a is connected to the storage chamber RML. The inert gas supply pipe 95a is connected to the inert gas supply mechanism 33 by the connection portion 95. Further, the substrate transport mechanism TRL is provided in the storage chamber RML. The substrate transfer mechanism TRL transports the substrate S in the storage chamber RML.

Gate valves G1 and G2 are provided for each of the substrate transfer inlet ENL and the substrate transfer outlet EXL. By sliding the gate valves G1 and G2, for example, sliding in the Z direction At this time, the substrate transfer inlet ENL and the substrate transfer outlet EXL are each opened and closed. When the gate valves G1 and G2 are closed, the sealed storage chamber RML is formed. A pressure reducing mechanism DCL such as a pump mechanism is connected to the storage room RML.

The substrate transfer mechanism TRL has two or more roller members 48. The roller member 48 is arranged in the X direction from the substrate transfer inlet ENL to the substrate discharge port EXL. Each of the roller members 48 has a Y-axis direction as a central axis direction and is rotatable around the Y-axis. The roller members 48 of 2 or more are formed to have the same diameter, and the positions in the Z direction are arranged equally. The roller member 48 of 2 or more is the upper end support substrate S on the +Z side.

Each of the roller members 48 is controlled to rotate, for example, via a roller rotation control unit (not shown). As shown in FIG. 1, the substrate transfer mechanism TRL may be a floating transport mechanism (not shown) that floats the substrate and transports it, for example, by using a haul transport mechanism.

The pretreatment unit PRE has a pretreatment chamber CBP. The pretreatment chamber CBP has a storage chamber RMP, a substrate transfer inlet ENP, and a substrate transfer outlet EXP. The storage chamber RMP is divided by the pretreatment chamber CBP and is formed to accommodate the size of the substrate S. The substrate transfer inlet ENP and the substrate transfer outlet EXP are formed in the opening of the pretreatment chamber CBP. The substrate transfer inlet ENP and the substrate transfer outlet EXP are formed to have a size through which the substrate S can pass. The substrate transfer inlet ENP is formed on the -X side end portion of the pretreatment chamber CBP, and is connected to the lock load chamber CBL. The substrate transfer port EXP is formed on the +X side end portion of the pretreatment chamber CBP, and is connected to the connection portion CNE.

Gate valves G2 and G3 are provided in each of the substrate transfer inlet ENP and the substrate transfer outlet EXP. When the gate valves G2 and G3 are slid in the Z direction, for example, the substrate transfer inlet ENP and the substrate transfer outlet EXP are opened and closed. When the gate valves G2 and G3 are closed, the sealed storage chamber RMP is formed. The gate valve G2 is used in common with the substrate transfer port EXL of the lock load chamber CBL and the substrate transfer inlet ENP of the pretreatment process chamber CBP.

An inert gas recovery pipe 91a is connected to the storage chamber RMP. The inert gas recovery pipe 91a is connected to the pump 31 by the connection portion 91. Further, an inert gas supply pipe 96a is connected to the storage chamber RMP. The inert gas supply pipe 96a is connected to the inert gas supply mechanism 33 by the connection portion 96.

The substrate transfer mechanism TRP and the surface treatment device 60 are provided in the storage chamber RMP. The substrate transfer mechanism TRP transports the substrate S in the storage chamber RMP. The substrate transfer mechanism TRP has two or more roller members 49. The roller member 49 is arranged in the X direction from the substrate transfer inlet ENP to the substrate discharge port EXP. Each of the roller members 49 is controlled to rotate via a roller rotation control unit (not shown). As the substrate transport mechanism TRP, a floating transport mechanism (not shown) that floats the substrate and transports it may be used.

The surface treatment apparatus 60 performs a process of removing an oxide film formed on the surface of the back electrode film on the substrate S or a process of washing the surface of the substrate S. The surface treatment device 60 includes an ultrasonic irradiation mechanism that irradiates the substrate S with ultrasonic waves, or a liquid supply mechanism that supplies a liquid such as ammonia or a mixed inert gas to the liquid in a spray form and supplies the liquid to the substrate S in a spray form. a heating mechanism that heats the liquid supplied to the substrate S and dried it, and supplies a washing liquid supply mechanism for washing the washing liquid such as pure water on the surface of the substrate S, and removes the air knife mechanism of the washing liquid on the substrate S, and the like. The processing mechanism shown.

The substrate transfer mechanism TRP has a substrate moving mechanism 65. The substrate moving mechanism 65 is moved between the position 63 on the roller member 49 of 2 or more and the position 64 of the ammonia water 61 immersed in the liquid tank 60 to move the substrate S. The substrate moving mechanism 65 is in a transport state in which the switchable substrate S is transported via the roller member 49 of two or more, and is immersed in the immersed state of the ammonia water 61. The substrate moving mechanism 65 has a holding portion that holds the substrate S.

The cleaning unit RS cleans the surface of the substrate S. The cleaning unit RS has, for example, a cleaning liquid supply source 62. The cleaning liquid supply source 62 has a cleaning liquid nozzle (not shown) for discharging the cleaning liquid onto the surface of the substrate S on the roller member 49 of two or more. As the washing liquid, for example, pure water or the like is used. The cleaning liquid supply source 62 is disposed on the +Z side of the substrate S. The cleaning liquid supply source 62 may be configured to be a fixed position, and may be configured to be movable in the X direction or the Y direction.

The connection portion CNE has a connection processing chamber CBN. The connection processing chamber CBN has a storage chamber RMN, a substrate transfer inlet ENN, and a substrate transfer outlet EXN. The storage chamber RMN is divided by the connection processing chamber CBN, and is formed to be sized to accommodate the substrate S. The substrate transfer inlet ENN and the substrate transfer port EXN are formed in the opening portion of the connection processing chamber CBN. The substrate transfer inlet ENN and the substrate transfer port EXN are formed to have a size through which the substrate S can pass. The substrate transfer inlet ENN is formed on the -X side end of the connection processing chamber CBN. Connected to the pretreatment chamber CBP. The substrate transfer port EXN is formed on the +X side end portion of the connection processing chamber CBN, and is connected to the substrate processing portion PCS.

Gate valves G3 and G4 are provided in each of the substrate transfer inlet ENN and the substrate transfer port EXN. When the gate valves G3 and G4 are slid in the Z direction, for example, the substrate transfer inlet ENN and the substrate transfer port EXN are configured to be opened and closed. When the gate valves G3 and G4 are closed, the sealed storage chamber RMN is formed. The gate valve G3 is used in common with the substrate transfer port EXP of the pretreatment processing chamber CBP and the substrate transfer inlet ENN of the connection processing chamber CBN.

The substrate transfer mechanism TRN, the inert gas supply unit GSN, and the exhaust unit EHN are provided in the storage chamber RMN. The substrate transfer mechanism TRN transports the substrate S in the storage chamber RMN. The substrate transfer mechanism TRN has two or more roller members 50. The roller member 50 is arranged in the X direction from the substrate transfer inlet ENN to the substrate discharge port EXN. Each of the roller members 50 is controlled to rotate via a roller rotation control unit (not shown). As the substrate transfer mechanism TRN, a floating transfer mechanism (not shown) that floats the substrate and transports it may be used.

The inert gas supply unit GSN is connected to the storage chamber RMN, and is supplied with, for example, an inert gas such as nitrogen gas, argon gas or helium gas. The inert gas supply unit GSN has a gas cylinder 71 and a gas pipe 72. The gas cylinder 71 is connected to the storage chamber RMN by a gas pipe 72. The inert gas supply unit GSN is provided with a supply amount adjustment unit (not shown) that adjusts the supply amount of the inert gas. The environment in which the storage chamber RMN can be used as an inert gas can be made via the inert gas supply unit GSN.

The exhaust unit EHN exhausts the gas in the storage chamber RMN, and decompresses the storage chamber RMN. The exhaust unit EHN includes an exhaust drive source 73 and an exhaust pipe 74. The exhaust drive source 73 is connected to the storage chamber RMN by an exhaust pipe 74. As the exhaust drive source 73, for example, a suction pump or the like is used. The exhaust pipe 74 has an exhaust port at an end portion provided in the storage chamber RMN. The exhaust port is disposed at the bottom (the surface on the -Z side) of the storage chamber RMN.

The substrate processing unit PCS has a first processing chamber CB1, a second processing chamber CB2, a third processing chamber CB3, and a fourth processing chamber CB4. The first processing chamber CB1, the second processing chamber CB2, the third processing chamber CB3, and the fourth processing chamber CB4 are connected in series in this order, for example, in the X direction.

The first processing chamber CB1 has a storage chamber RM1, a substrate transfer inlet EN1, and a substrate transfer outlet EX1. The storage chamber RM1 is partitioned by the first processing chamber CB1 and is formed to accommodate the size of the substrate S. The substrate transfer inlet EN1 and the substrate transfer outlet EX1 are formed in the opening of the first processing chamber CB1. The substrate transfer inlet EN1 and the substrate discharge port EX1 are formed to have a size through which the substrate S can pass. The substrate transfer inlet EN1 is formed, for example, at the -X side end portion of the storage chamber RM1, and is connected to the connection processing chamber CBN. The substrate discharge port EX1 is formed, for example, at the +X side end portion of the storage chamber RM1, and is connected to the second processing chamber CB2.

Gate valves G4 and G5 are provided for each of the substrate inlet EN1 and the substrate outlet EX1. When the gate valves G4 and G5 are slid in the Z direction, for example, the substrate inlet EN1 and the substrate outlet EX1 are each opened and closed. When the gate valves G4 and G5 are closed, they become sealed. Containment room RM1. The gate valve G4 is used in common with the substrate transfer port EXN of the connection processing chamber CBN and the substrate transfer inlet EN1 of the first processing chamber CB1.

The substrate transport mechanism TR1, the application unit CT, and the maintenance unit MN are provided in the storage chamber RM1. The substrate transfer mechanism TR1 is a portion that transports the substrate S in the storage chamber RM1. The substrate transfer mechanism TR1 has two or more roller members 51. The roller member 51 is arranged in the X direction from the substrate transfer inlet EN1 to the substrate discharge port EX1. Each of the roller members 51 is controlled to rotate via a roller rotation control unit (not shown). Similarly to the above-described substrate transfer mechanism TRL, the substrate transfer mechanism TR1 may be a floating transport mechanism that floats and transports the substrate, for example, by using a haul transport mechanism.

An inert gas recovery pipe 92a is connected to the storage chamber RM1. The inert gas recovery pipe 92a is connected to the pump 31 by the connection portion 92. Further, an inert gas supply pipe 97a is connected to the storage chamber RM1. The inert gas supply pipe 97a is connected to the inert gas supply mechanism 33 by the connection portion 97.

The coating unit CT is housed in the storage chamber RM1 of the first processing chamber CB1. The coating portion CT has a slit nozzle NZ formed in a long strip shape. The slit nozzle NZ is provided in the storage chamber RM1 at a position in the X direction, for example, between the substrate transfer inlet EN1 and the substrate discharge port EX1.

2A and 2B are views showing the configuration of the slit nozzle NZ. Fig. 2A shows the configuration of the slit nozzle NZ in the +Z direction. Fig. 2B shows the configuration of the slit nozzle NZ in the +Y direction.

As shown in FIG. 2A and FIG. 2B, the slit nozzle NZ is formed in a long strip shape in the Y direction, for example. A nozzle opening portion 21 formed in a slit shape along the longitudinal direction of the slit nozzle NZ is provided in the tip end portion NZa of the slit nozzle NZ in the -Z direction.

As shown in FIG. 2A, the nozzle opening portion 21 is formed, for example, in a longitudinal direction which is slightly the same as the dimension of the substrate S in the Y direction. The slit nozzle NZ is formed from a slightly central portion in the Z direction to the front end portion NZa, and the dimension in the X direction is gradually reduced toward the center portion in the X direction, and the tip end is tapered.

The slit nozzle NZ discharges a liquid material Q (see FIG. 3) of a metal such as the above-described Cu, In, Ga, and Se4 types at a specific composition ratio from the nozzle opening portion 21. The slit nozzles NZ are connected to a liquid supply source (not shown) by connection pipes (not shown) or the like. The slit nozzle NZ has a holding portion that holds the liquid inside.

The slit nozzle NZ has a temperature adjustment mechanism (not shown) for adjusting the temperature of the liquid body held by the holding portion.

A nozzle drive mechanism NA (see FIG. 1) is provided in the slit nozzle NZ. The nozzle drive mechanism NA has a configuration in which the slit nozzle NZ is driven in the X direction, the Y direction, and the Z direction. For example, the nozzle drive mechanism NA has a configuration in which the movable slit nozzle NZ is disposed between the standby position of the storage chamber RM1 and the application position (the position shown in FIG. 1).

As shown in FIG. 1, the maintenance unit MN has, for example, a nozzle front end management unit NTC that manages the front end portion NZa of the slit nozzle NZ. The nozzle front end management unit NTC is provided in the movable storage chamber RM1. The nozzle front end management unit NTC is for improving the coating accuracy via the coating portion CT The deposits of the front end portion NZa of the slit nozzle NZ are removed, and the front end portion NZa of the slit nozzle NZ is optimally managed. The nozzle front end management unit NTC is provided, for example, to be movable on the transport path of the substrate S.

The second processing chamber CB2 has a storage chamber RM2, a substrate transfer inlet EN2, and a substrate discharge port EX2. The storage chamber RM1 is divided by the second processing chamber CB2 and is formed to accommodate the size of the substrate S. The substrate transfer inlet EN2 and the substrate discharge port EX2 are formed in the opening of the second processing chamber CB2. The substrate transfer inlet EN2 and the substrate discharge port EX2 are formed to have a size through which the substrate S can pass. The substrate transfer inlet EN2 is formed, for example, at the -X side end portion of the storage chamber RM2, and is connected to the first processing chamber CB1. The substrate transfer port EX2 is formed, for example, at the +X side end portion of the storage chamber RM2, and is connected to the third processing chamber CB3.

Gate valves G5 and G6 are provided in each of the substrate transfer inlet EN2 and the substrate discharge port EX2. When the gate valves G5 and G6 are slid in the Z direction, for example, the substrate transfer inlet EN2 and the substrate transfer opening EX2 are opened and closed. When the gate valves G5 and G6 are closed, the sealed storage chamber RM2 is formed. The gate valve G5 is used in common by the substrate transfer port EX1 of the first process chamber CB1 and the substrate transfer port EN2 of the second process chamber CB2.

The substrate transfer mechanism TR2, the heating unit HT2, the inert gas supply unit GS2, and the exhaust unit EH2 are provided in the storage chamber RM2. The substrate transfer mechanism TR2 is a portion that transports the substrate S in the storage chamber RM2. The substrate transfer mechanism TR2 has two or more roller members 52. Roller member 52 is from The substrate transfer inlet EN2 to the substrate discharge port EX2 are arranged in the X direction.

Each of the roller members 52 is controlled to rotate via a roller rotation control unit (not shown). Similarly to the above-described substrate transport mechanism TRL, the substrate transport mechanism TR2 may be a floating transport mechanism that floats the substrate and transports it, for example, by using a haul transport mechanism.

The heating unit HT2 heats a portion of the liquid material applied to the substrate S. The heating unit HT2 has a heating mechanism such as an infrared ray device or a heating plate inside. In the heating unit HT2, for example, when the heating means is used, drying of the liquid is performed, for example. Therefore, in the second processing chamber CB2, a mechanism capable of drying under reduced pressure is obtained.

The inert gas supply unit GS2 is housed in the storage chamber RM2, and is supplied with, for example, an inert gas such as nitrogen gas, argon gas or helium gas. The inert gas supply unit GS2 has a gas cylinder 81 and a gas pipe 82. The gas cylinder 81 is connected to the storage chamber RM2 by a gas pipe 82. The inert gas supply unit GS2 is provided with a supply amount adjustment unit (not shown) that adjusts the supply amount of the inert gas. The environment in which the storage chamber RM2 can be used as an inert gas can be obtained via the inert gas supply unit GS2.

The exhaust unit EH2 exhausts the gas in the storage chamber RM2, and decompresses the storage chamber RM2. The exhaust unit EH2 has an exhaust drive source 83 and an exhaust pipe 84. The exhaust drive source 83 is connected to the storage chamber RM2 by an exhaust pipe 84. As the exhaust drive source 83, for example, a suction pump or the like is used. The exhaust pipe 84 has an exhaust port at an end portion provided at the storage chamber RM2. The exhaust port is disposed at the bottom (the surface on the -Z side) of the storage chamber RM2.

The third processing chamber CB3 has a storage chamber RM3, a substrate transfer inlet EN3, and a substrate discharge port EX3. The storage chamber RM3 is partitioned by the third processing chamber CB3, and is formed to be sized to accommodate the substrate S. The substrate transfer inlet EN3 and the substrate transfer port EX3 are formed in the opening of the storage chamber RM3. The substrate transfer inlet EN3 and the substrate discharge port EX3 are formed to have a size through which the substrate S can pass. The substrate transfer inlet EN3 is formed, for example, at the -X side end of the storage chamber RM3, and is connected to the second processing chamber CB2. The substrate transfer port EX3 is formed, for example, at the +X side end portion of the storage chamber RM3, and is connected to the fourth processing chamber CB4.

Gate valves G6 and G7 are provided in each of the substrate transfer inlet EN3 and the substrate transfer port EX3. When the gate valves G6 and G7 are slid in the Z direction, for example, the substrate inlet EN3 and the substrate outlet EX3 are opened and closed. When the gate valves G6 and G7 are closed, the sealed storage chamber RM3 is formed. The gate valve G6 is used in common with the substrate transfer port EX2 of the second process chamber CB2 and the substrate transfer port EN3 of the third process chamber CB3.

The substrate transfer mechanism TR3 and the heating unit HT3 are provided in the storage chamber RM3. The substrate transfer mechanism TR3 is a portion that transports the substrate S in the storage chamber RM3. The substrate transfer mechanism TR3 has two or more roller members 53. The roller member 53 is arranged in the X direction from the substrate transfer inlet EN3 to the substrate discharge port EX3. Each of the roller members 53 is controlled to rotate via a roller rotation control unit (not shown). Similarly to the above-described substrate transfer mechanism TRL, the substrate transfer mechanism TR3 may be a floating transport mechanism that floats the substrate and transports it, for example, by using a haul transport mechanism.

An inert gas recovery pipe 93a is connected to the storage chamber RM3. The inert gas recovery pipe 93a is connected to the pump 33 by the connection portion 93. Further, an inert gas supply pipe 98a is connected to the storage chamber RM3. The inert gas supply pipe 98a is connected to the inert gas supply mechanism 33 by the connection portion 98.

The heating unit HT3 heats a portion of the liquid material applied to the substrate S. The heating unit HT3 has a heating mechanism such as an infrared ray device, a heating plate, or an oven mechanism. As the heating portion HT3, a heating mechanism that can be heated more strongly than, for example, the heating mechanism used in the heating portion HT2 is preferably used. In the heating unit HT3, baking of the substrate S is performed when the heating mechanism is used. In the storage room RM3, the heating unit HT3 is installed in two places, for example, two places. Therefore, the heating operation in the storage chamber RM3 is configured to heat the substrate S at a higher temperature than the heating operation in the storage chamber RM2.

The fourth processing chamber CB4 has a storage chamber RM4, a substrate transfer inlet EN4, and a substrate discharge port EX4. The storage chamber RM4 is partitioned by the fourth processing chamber CB4, and is formed to be sized to accommodate the substrate S. The substrate transfer inlet EN4 and the substrate discharge port EX4 are formed in the opening of the storage chamber RM4. The substrate transfer inlet EN4 and the substrate discharge port EX4 are formed to have a size through which the substrate S can pass. The substrate transfer inlet EN4 is formed, for example, at the -X side end of the storage chamber RM4, and is connected to the third processing chamber CB3. The substrate transfer port EX4 is formed, for example, at the +X side end portion of the storage chamber RM4, and is connected to the outside.

Gate valves G7 and G8 are provided in each of the substrate inlet EN4 and the substrate outlet EX4. By sliding the gate valves G7 and G8, for example, sliding in the Z direction At this time, the substrate transfer inlet EN4 and the substrate transfer port EX4 are each opened and closed. When the gate valves G7 and G8 are closed, the sealed storage chamber RM4 is formed. The gate valve G7 is used in common with the substrate transfer port EX3 of the third process chamber CB3 and the substrate transfer port EN4 of the fourth process chamber CB4.

The substrate transfer mechanism TR4 and the cooling unit CL are provided in the storage chamber RM4. The substrate transfer mechanism TR4 is a portion that transports the substrate S in the storage chamber RM4. The substrate transfer mechanism TR4 has two or more roller members 54. The roller member 54 is arranged in the X direction from the substrate transfer inlet EN4 to the substrate discharge port EX4. Each of the roller members 54 is controlled to rotate via a roller rotation control unit (not shown). Similarly to the above-described substrate transport mechanism TRL, the substrate transport mechanism TR4 may be a floating transport mechanism that floats the substrate and transports it, for example, by using a haul transport mechanism.

An inert gas recovery pipe 94a is connected to the storage chamber RM4. The inert gas recovery pipe 94a is connected to the pump 33 by the connection portion 94. Further, an inert gas supply pipe 99a is connected to the storage chamber RM4. The inert gas supply pipe 99a is connected to the inert gas supply mechanism 33 by the connection portion 99.

The cooling portion CL cools a portion of the substrate S heated by the substrate S in the second processing chamber CB2 or the third processing chamber CB3. The cooling unit CL is a cooling mechanism having a cooling plate or the like that can be configured to flow, for example, a refrigerant. When the cooling unit CL is used, the substrate S is cooled in the storage chamber RM4.

The control unit CONT controls the portion of the coating device CTR. Specifically, the control device CONT controls each of the lock load chamber CBL, the pretreatment processing chamber CBP, the connection processing chamber CBN, the first processing chamber CB1, the second processing chamber CB2, the third processing chamber CB3, and the fourth processing chamber CB4. action.

Specific operations include, for example, the opening and closing operations of the gate valves G1 to G8, and the substrate transfer operation via the substrate transfer mechanisms TRL, TRP, TRN, and TR1 to TR4, and the application operation via the application portion CT, via the heating portion HT2. The heating operation of the HT 3 is performed by the exhaust operation of the exhaust portions EHN and EH2, the gas supply operation via the inert gas supply units GSN and GS2, the cooling operation via the cooling unit CL, and the like.

When the substrate transport mechanism of the storage chamber adjacent to the substrate transfer mechanisms TRL, TRP, TRN, and TR1 to TR4 is interlocked by the control device CONT, the substrate transfer mechanisms TRL, TRP, TRN, and TR1 to TR4 are used. The substrate S can be transferred between adjacent storage chambers. Further, a configuration of a transport mechanism (not shown) that transports the substrate S between adjacent storage chambers may be provided.

An inert gas regeneration mechanism 32 is provided between the pump 31 and the inert gas supply mechanism 33. The inert gas regeneration mechanism 32 is sent to the inert gas supply mechanism 33 by removing impurities or the like from the inert gas from the gases collected by the pump 31 from the storage chambers RML, RMP, RM1, RM3, and RM4. The inert gas regenerated from the inert gas supply mechanism 33 is supplied to the storage chambers RML, RMP, RM1, RM3, and RM4.

Next, a coating device having the above configuration will be described with reference to FIGS. 3 to 6 . The action of the CTR. 3 to 6 are views showing the configuration of the pretreatment processing chamber CBP, the connection processing chamber CBN, and the first processing chamber CB1 among the coating devices CTR.

The control device CONT is in a state in which the ammonia water 61 is accommodated in the liquid tank 60 of the storage chamber RMP before the substrate S is carried in, and the cleaning liquid is stored in the cleaning liquid supply source 62 of the cleaning unit RS. In this manner, the control device CONT is arranged in a state in which the substrate S is subjected to pre-processing.

Further, the control device CONT holds the liquid material in the holding portion of the slit nozzle NZ before loading the substrate S. The control device CONT adjusts the temperature of the liquid material held in the holding portion by using the temperature adjustment mechanism in the slit nozzle NZ. In this manner, the control device CONT is arranged in a state in which the substrate S discharges the liquid.

The control device CONT uses the storage chambers RML, RMP, RMN, RM1 to RM4 as a sealed state, and uses the inert gas supply units GSN and GS2, the exhaust units EHN and EH2, the inert gas supply unit 33, the pump 31, and the like. The storage chambers RML, RMP, RMN, and RM1 to RM4 are used as an environment for an inert gas.

When the substrate S is transferred from the outside to the coating device CTR in a state where the coating device CTR is in a state where the coating device CTR is disposed, the control device CONT opens the gate valve G1 in a state in which the gate valve G2 is closed, and carries the substrate S from the substrate carrying inlet ENL to the housing. Room RML. After the substrate S is moved into the storage chamber RML, the control device CONT closes the gate valve G1 that locks the load chamber CBL. When the gate valve G1 is closed, the storage chamber RML is in a sealed state.

Control device CONT is used to supply the amount of inert gas and the amount of exhaust gas At the same time, the gate valve G2 is opened. After the gate valve G2 is opened, the control unit CONT transports the substrate S from the lock load chamber CBL to the pretreatment processing chamber CBP.

The control device CONT closes the gate valve G2 after carrying the substrate S into the storage chamber RMP of the pretreatment chamber CBP. After the gate valve G2 is closed, as shown in FIG. 3, the control device CONT transports the substrate S to the position on the -Z side of the surface treatment device 60. After the substrate S reaches the position on the -Z side of the surface treatment apparatus 60, the control unit CONT performs a process of removing the oxide film on the surface of the back surface electrode on the substrate S using the surface treatment apparatus 60.

In this case, for example, a process of irradiating ultrasonic waves on the substrate S, a process of supplying an alkaline solution, for example, an inkjet of ammonia water, and a process of supplying a mixed spray of ammonia water and an inert gas to the substrate S may be mentioned. The control device CONT performs at least one of these processes.

When such a treatment is performed, an oxide film is formed on the +Z side surface of the back surface electrode on the substrate S, and the oxide film is decomposed by the reaction with ammonia water to remove the oxide film from the surface of the back surface electrode on the substrate S. As described above, before the liquid material is applied to the substrate S, the treatment for removing the oxide film on the surface of the back surface electrode on the substrate S is performed as a pretreatment. The ammonia water used in the pretreatment described above is recovered, and after the concentration (pH) is adjusted, the impurities may be removed and reused.

The control device CONT performs a process of cleaning the substrate S after performing an oxide film removal process on the surface treatment device 60. In this case, the control device CONT supplies the washing liquid onto the substrate S via the washing liquid supply mechanism. , rinse the ammonia water. Thereafter, the control device CONT removes the washing liquid on the substrate S using an air knife mechanism.

After the washing liquid on the substrate S is removed, the substrate S is heated and dried. Specifically, the control device CONT uses a heating mechanism of the surface treatment device 60 to heat the ammonia water remaining on the substrate S or the liquid remaining in the washing liquid on the substrate S. In this case, for example, the surface treatment apparatus 60 has an infrared heater or the like on the +Z side of the transport path of the substrate S, and can transport the substrate S while heating the substrate S on the -Z side of the infrared heater.

The heating temperature is set to be 300 ° C or lower. It is preferably 70 ° C or more and 150 ° C or less, more preferably 80 ° C or more and 130 ° C or less. When the heating temperature is 300° C. or lower, even if the constituent material of the substrate S is a resin material, heat treatment is performed without deforming the substrate S.

After the substrate S is dried, the gate valve G3 is opened, and the substrate S is transferred from the storage chamber RMP of the pretreatment processing chamber CBP to the storage chamber RMN of the connection processing chamber CBN. Both chambers are adjusted in an environment which is an inert gas, and the oxidation of the surface of the back surface electrode on the substrate S on which the oxide film is removed is suppressed.

After the control device CONT removes the oxide film on the surface of the back surface electrode on the substrate S, the air knife is not formed by washing the substrate S through the washing liquid, and an inert gas (for example, nitrogen or argon is released from the air knife). Etc.) and remove ammonia water. Further, after the control device CONT removes the oxide film on the surface of the back surface electrode on the substrate S, the drying process may be performed by removing the liquid through the air knife without washing the washing liquid.

As shown in FIG. 4, after the substrate S is placed in the storage chamber RMN, the control device CONT closes the gate valve G3 and closes the storage chamber RMN. After the storage chamber RMN is in a sealed state, the substrate S is placed in standby, and the environment of the storage chamber RMN is adjusted to serve as an inert gas atmosphere.

The control device CONT adjusts the environment of the storage chamber RMN to serve as an inert gas atmosphere, and then opens the gate valve G4. After the gate valve G4 is opened, the control unit CONT transports the substrate S from the storage chamber RMN of the connection processing chamber CBN to the storage chamber RM1 of the first processing chamber CB1. The storage chamber RMN and the storage chamber RM1 are adjusted so that both chambers are in an inert gas atmosphere, and oxidation of the surface of the substrate S is suppressed.

In this manner, the space between the storage chamber RMP of the pretreatment processing chamber CBP and the storage chamber RM1 of the first processing chamber CB1 is an inert gas atmosphere, and the oxidation of the surface of the substrate S between the coating treatments after the pretreatment is suppressed. . Therefore, in the state in which the surface of the back surface electrode on the substrate S is extremely small, the surface of the substrate S is subjected to a coating treatment.

When the coating process is performed, the control device CONT rotates the roller member 51 of the substrate transfer mechanism TR1 to move the substrate S in the +X direction. The end side of the +X side of the substrate S reaches the position overlapping the slit nozzle NZ in the Z direction. As shown in FIG. 5, the control device CONT discharges the liquid material Q from the slit nozzle NZ while passing the substrate. When S moves in the X direction, the liquid material Q is applied to the entire surface of the substrate S.

The oxide film formed on the surface of the back surface electrode formed on the substrate S is removed by the pretreatment, and then the oxide film is hardly formed, and the liquid material is formed in a slightly uniform film thickness over a specific range of the substrate S. Cloth filmer . After the formation of the coating film, as shown in FIG. 6, the control device CONT stops the discharge operation of the liquid material from the slit nozzle NZ.

After the discharge operation is stopped, the control device CONT accommodates the substrate S on which the coating film is formed in the storage chamber RM2 of the second processing chamber CB2. Specifically, the control device CONT is in a state in which the gate valve G5 is opened, and the substrate S is carried into the storage chamber RM2 by the substrate carrying-out port EX1 and the substrate carrying-in EN2.

After the control device CONT carries the substrate S into the storage chamber RM2, the gate valves G5 and G6 are closed, and the storage chamber RM2 is sealed. Thereafter, the control device CONT substrate S is moved to the -Z side of the heating portion HT2, and then the storage chamber RM2 is depressurized by operating the exhaust portion EH2. After depressurizing the storage chamber RM2, the control unit CONT operates the heating unit HT2 to heat (dry under reduced pressure) the coating film on the substrate S.

When the liquid is heated under reduced pressure, the coating film L is efficiently dried in a short time. The heating temperature at this time is 300 ° C or lower as in the drying treatment after washing. It is preferably 25 ° C or more and 150 ° C or less, more preferably 30 ° C or more and 150 ° C or less. In this case, even when the heating temperature is 300° C. or less, even if the constituent material of the substrate S is a resin material, the substrate S is not deformed and heat treatment is performed.

The control device CONT stops the rotation operation of the roller member 52, for example, and operates the heating unit HT2 while stopping the movement of the substrate S. For example, in the state of the rotational speed of the adjustment roller member 52, the heating portion H2 is operated in a state in which the moving speed of the substrate S is lowered. In addition, For example, the control device CONT adjusts the heating time, the heating temperature, and the like by using the memory value described above, and the heating operation of the coating film L is performed, for example, when the coating film on the substrate S is preliminarily stored until the drying time or the heating temperature.

After the decompression drying operation, the control device CONT causes the substrate S to be housed in the storage chamber RM3 of the third processing chamber CB3. Specifically, the control device CONT is in a state in which the gate valve G6 is opened, and the substrate S is carried into the storage chamber RM3 by the substrate transfer port EX2 and the substrate transfer inlet EN3.

After the control device CONT carries the substrate S into the storage chamber RM3, the substrate S moves in the Z direction and is moved between the two heating portions HT3. After the substrate S is moved, the control unit CONT operates the heating unit HT3 to heat (baking) the substrate S and the coating film on the substrate S. When the heating operation is performed, the state of the coating film can be stabilized.

After the heating operation, the control unit CONT causes the substrate S to be housed in the storage chamber RM4 of the fourth processing chamber CB4. Specifically, the control device CONT is in a state in which the gate valve G7 is opened, and the substrate S is carried into the storage chamber RM4 by the substrate transfer port EX3 and the substrate transfer inlet EN4.

After the control device CONT carries the substrate S into the storage chamber RM4, the substrate S moves on the cooling portion CL in the Z direction. After moving the substrate S, the control unit CONT operates the cooling unit CL to cool (cool) the substrate S and the coating film on the substrate S.

After the cooling operation described above, the control device CONT opens the gate valve G8 and carries out the substrate S by the substrate carrying-out port EX4. In this way, the processing using the coating device CTR is completed.

As described above, according to the present embodiment, there is a connection via the application section. In the storage chamber RM1 of the storage chamber RMP in which the liquid material Q is applied by the CT, and the storage chamber RMN in which the storage chamber RMP is pretreated by the pretreatment unit PRE, the environment in which the storage chamber RMN is provided is adjusted to be an inert gas atmosphere. The configuration of the connecting portion CNE can make the space from the storage chamber RMP to the storage chamber RM1 an inert gas atmosphere. Thereby, it is possible to suppress a change in the state of the surface of the substrate S after the previous processing of the substrate S and between coatings.

[Second embodiment]

Next, a second embodiment of the present invention will be described.

Fig. 7 is a view showing the configuration of the coating device CTR2 of the present embodiment.

As shown in FIG. 7 , the coating apparatus CTR2 described in the present embodiment has a configuration in which the substrate processing unit PRC is repeatedly disposed in series.

The coating device CTR2 is provided with the substrate loading portion LDR, the preprocessing portion PRE, the connecting portion CNE, and the substrate processing portions PRC1 to PRC3. The configuration of each of the substrate processing units PRC1 to PRC3 is the same as the configuration of the substrate processing unit PRC. Further, the fourth processing chamber device CB4 of the substrate processing unit PRC3 has a configuration in which the cooling unit and the unloading device are combined.

In this case, by transporting the substrate S to the − direction (X direction), two or more coating films can be formed on the substrate S. In this case, the first processing chamber device CB1 of each of the substrate processing units PRC1 to PRC3 may be configured to apply a different type of liquid material.

As described above, according to the present embodiment, the substrate is repeatedly arranged in series The processing unit PRC can continuously perform the process of laminating the coating film on the substrate S. Thereby, the coating film can be formed efficiently with respect to the substrate S.

[Third embodiment]

Next, a third embodiment of the present invention will be described.

Fig. 8 is a view showing the configuration of the coating device CTR3 of the present embodiment.

In Fig. 8, the direction in the drawing is explained using the XYZ coordinate system as in the above embodiment. In the XYZ coordinate system, the left-right direction in the figure is referred to as the X direction, and the direction perpendicular to the X direction in the plan view is referred to as the Y direction. The direction perpendicular to the plane including the X-axis and the Y-axis is expressed as the Z direction. Each of the X direction, the Y direction, and the Z direction is a configuration in which the direction of the arrow in the figure is the + direction, and the direction opposite to the direction of the arrow is the - direction.

The coating apparatus CTR3 of the present embodiment includes a substrate loading unit LDR, a preprocessing unit PRE, and a substrate processing unit PRC, and is the first processing chamber CB1, the second processing chamber CB2, the third processing chamber CB3, and the first processing unit PRC. The four processing chambers CB4 are configured to be connected to each other with the mesofacial portion IF as a center. Accordingly, in the present embodiment, the interface portion IF has a connection portion between the pre-processing unit PRE and the first processing chamber CB1.

The interfacial IF system has a shared processing chamber CBI. The shared processing chamber CBI has a storage chamber RMI, a connection port JNL, and JN1 to JN3. The connection ports JNL and JN1 to JN4 are connected between the interface IF and each processing chamber. Each of the connection ports JNL and JN1 to JN3 is formed to have a size through which the substrate S can pass. By this The connection ports JN1 to JN4 are such that the substrate S can be moved between the processing chambers.

The connection port JNL is connected to the storage chamber RMI of the common processing chamber CBI and the storage chamber RMP of the pretreatment processing chamber CBP. The connection port JN1 is connected to the storage chamber RMI and the storage chamber RM1 of the first processing chamber CB1. The connection port JN2 is connected to the storage chamber RM2 of the storage chamber RMI and the second processing chamber CB2. The connection port JN3 is connected to the storage chamber RM3 of the storage chamber RMI and the third processing chamber CB3.

A robot arm device RBT having a handle ARM is provided for the housing room RMI. The handle ARM is attached to the base FND of the robot arm device RBT. The base FND is movably (liftable) in the Z direction via a drive mechanism (not shown). The shank ARM is formed to be stretchable in one direction on the XY plane. The shank ARM is provided with the base FND and the connecting portion as the center, and is rotatable in the θ Z direction.

The substrate holding portion HLD of each holding substrate S is provided in the storage chamber RMP of the pretreatment processing chamber CBP, the storage chamber RM1 of the first processing chamber CB1, and the storage chamber RM2 of the second processing chamber CB2. In the present embodiment, the substrate S is processed in a state in which the substrate S is held by the substrate holding portion HLD in the storage chamber RMP, the storage chamber RM1, and the storage chamber RM2. Further, the surface treatment device 60 having the same configuration as that of the above-described first embodiment is provided in the storage chamber RMP of the pretreatment processing chamber CBP.

The coating chamber CT and the maintenance unit MN are provided in the storage chamber RM1 of the first processing chamber CB1. The coating portion CT has a nozzle NZ and a guiding mechanism G. The nozzle NZ is movably disposed along the guiding mechanism G. guide The mechanism G extends over the surface (for example, the surface on the +Z side) of the substrate S held by the substrate holding portion HLD. Accordingly, the nozzle NZ moves as a whole of the surface of the scanable substrate S.

The maintenance unit MN has a nozzle management unit NTC that manages the front end of the nozzle NZ. The nozzle management unit NTC is disposed, for example, on the side of the substrate holding portion HLD. The guide mechanism G described above extends from the substrate holding portion HLD across the nozzle management portion NTC, and is configured to connect the nozzle NZ to the nozzle management portion NTC.

The substrate transfer mechanism TR similar to the above-described embodiment is provided in the storage chamber RM3 of the third processing chamber CB3 and the storage chamber RM4 of the fourth processing chamber CB4. In the storage chamber RM3, two or more conveyance rollers 53 are disposed in one direction, and two or more conveyance rollers 54 are disposed in one direction in the storage chamber RM4. In the third processing chamber CB3 and the fourth processing chamber CB4, the substrate S is transported in one direction in the storage chamber RM3 and the storage chamber RM4.

The heating chamber HT2, the inert gas supply unit GS, and the exhaust unit EH2 are provided in the storage chamber RM2 of the second processing chamber CB2. In the second processing chamber CB2, it is configured to be dried under reduced pressure. The heating unit HT3 is provided in the storage chamber RM3 of the third processing chamber CB3. In the storage room RM3, the heating unit HT3 is installed in two places, for example, two places. The heating operation in the storage chamber RM3 is configured to heat the substrate S at a higher temperature than the heating operation in the storage chamber RM2. A cooling unit CL is provided in the storage chamber RM4 of the fourth processing chamber CB4. When the cooling unit CL is used, the substrate S is made in the storage chamber RM4. Cooling.

Inactive gas recovery pipes 90a, 91a, 92a, 93a, and 94a are connected to the storage chambers RML, RMP, RM1, RM3, and RM4, respectively. The inert gas recovery pipes 90a, 91a, 92a, 93a, and 94a are connected to the pump 31 by the joint portions 90, 91, 92, 93, and 94. Further, inert gas recovery pipes 95a, 96a, 97a, 98a, and 99a are connected to the storage chambers RML, RMP, RM1, RM3, and RM4.

The inert gas recovery pipes 95a, 96a, 97a, 98a, and 99a are connected to the inert gas supply mechanism 33 by the connection portions 95, 96, 97, 98, and 99.

Next, the operation of the coating device CTR3 having the above configuration will be described.

The control device CONT uses the storage chambers RML, RMP, RMI, and RM1 to RM4 as a sealed state, and uses the inert gas supply units GSN and GS2, the exhaust units EHI and EH2, the inert gas supply unit 33, the pump 31, and the like. The storage chambers RML, RMP, RMI, and RM1 to RM4 are used as an environment for an inert gas.

In this state, the substrate S is carried into the storage chamber RML from the substrate loading port ENT of the lock load chamber CBL of the substrate loading portion LDR. After the substrate S is housed in the storage chamber RML, the control device CONT opens the gate valve GB between the lock load chamber CBL and the pretreatment processing chamber CBP.

After the gate valve GB is opened, the control unit CONT carries the substrate S into the storage chamber RMP of the pretreatment processing chamber CBP, and the substrate S is placed on the substrate holding portion HLD. After the substrate S is placed on the substrate holding portion HLD, the control device CONT uses the surface treatment device 60 to Pretreatment is performed on the substrate S. As the pre-processing, for example, the same processing as that of the first embodiment described above is performed.

After the pre-processing, the control unit CONT connects the handle ARM of the robot arm device RBT provided on the face IF to the accommodating chamber RMP. The control device CONT uses the shank ARM connected to the accommodating chamber RML to pull up the substrate S held by the substrate holding portion HLD, and transports it to the dielectric surface IF via the connection port JNL.

Next, the control device CONT opens the gate valve GB between the common processing chamber CBI and the first processing chamber CB1, and connects the handle portion ARM holding the substrate S state to the storage chamber RM1 of the first processing chamber CB1. The control device CONT mounts the substrate S on the substrate holding portion HLD of the first processing chamber CB1, and temporarily pulls the handle ARM back to the common processing chamber CBI.

After the handle ARM is pulled back, the control device CONT closes the gate valve GB of the first processing chamber CB1, and performs a coating operation in the storage chamber RM1. In the coating operation, for example, when the substrate S is placed on the substrate holding portion HLD, the liquid nozzle NZ is simultaneously ejected from the nozzle NZ to the surface of the substrate S (for example, the surface on the +Z side). A coating film of a liquid material is formed on the entire surface of the substrate S.

The nozzle NZ is moved on the surface of the substrate S along the guiding mechanism G, for example, and the liquid material is discharged to the surface of the substrate S. As a result, a coating film of a liquid material is uniformly formed on the surface of the substrate S. The control device CONT is the front end (the end on the -Z side) of the management nozzle NZ when the nozzle management device MN is used periodically or irregularly, for example.

In this way, from the RMP of the pretreatment processing room CBP to the first place The storage chamber RM1 of the chamber CB1 is in an inert gas atmosphere, and the oxidation of the surface of the substrate S between the coating treatments after the pretreatment is suppressed. Therefore, in the state in which the surface of the back surface electrode on the substrate S is extremely small, the surface of the substrate S is subjected to a coating treatment.

After the coating operation, the control device CONT opens the gate valve GB of the first processing chamber CB1, and carries the substrate S on the substrate holding portion HLD of the storage chamber RM1 out of the common processing chamber CBI via the handle ARM. After the substrate S is carried out, the control device CONT opens the gate valve GB between the common processing chamber CBI and the second processing chamber CB2, and carries the substrate S into the storage chamber RM2 of the second processing chamber CB2 using the handle ARM.

The control device CONT moves the handle ARM by holding the substrate S via the substrate holding portion HLD of the storage chamber RM2. The control device CONT pulls the handle ARM back to the common processing chamber CBI after the substrate S is held, and closes the gate valve GB of the second processing chamber CB2. After the control unit CONT is in the sealed storage chamber RM2, the storage chamber RM2 is depressurized by the exhaust unit EH2, and the storage chamber RM2 is used as the inert gas atmosphere using the inert gas supply unit GS2. In a state where the storage chamber RM2 is simultaneously decompressed as an inert gas atmosphere, the control device CONT uses the heating portion HT2 to dry the coating film of the liquid material formed on the surface of the substrate S.

After the drying operation, the control unit CONT operates the handle ARM to carry the substrate S out of the storage chamber RM2, and carries the substrate S into the storage chamber RM3 of the third processing chamber CB3.

After the substrate S is carried into the storage chamber RM3, the control unit CONT By operating the transport mechanism TR, the substrate S is transported to the processing position between the two heating portions HT3. After the substrate S reaches the processing position, the control unit CONT operates the heating unit HT3 to burn the substrate S. After the firing operation, the control device CONT operates the transport mechanism TR to carry the substrate S into the storage chamber RM4 of the fourth processing chamber CB4.

After the control device CONT substrate S is carried into the storage chamber RM4, the substrate S is cooled by operating the cooling portion CL. After the cooling operation, the control device CONT carries the substrate S out of the coating device CTR3 from the substrate carrying port EXT disposed on the +X side of the fourth processing chamber CB4.

As described above, according to the present embodiment, the shared processing chamber CBI is connected to the lock load chamber CBL, the first processing chamber CB1, the second processing chamber CB2, and the third processing chamber CB3, and the substrate is passed through the robot arm device RBT. The configuration in which S is transported to the storage chambers of the respective processing chambers by the face portion IF enables efficient processing.

In this case, when the fourth processing chamber CB4 subjected to the cooling treatment is connected in series from the third processing chamber CB3 for heating (baking), the already baked substrate S can be carried out from the coating device CTR3 without being carried into the common processing chamber CBI. . Thereby, the temperature of the shared processing chamber CBI can be prevented from becoming high.

The technical scope of the present invention is not limited to the above-described embodiments, and may be appropriately modified without departing from the scope of the present invention.

In the above-described embodiment, in the operation of the coating device CTR, the three-chamber environment in which the storage chamber RMP, the storage chamber RMN, and the storage chamber RM1 are accommodated has been exemplified, but the invention is not limited thereto. For example, before In the adjustment operation, the control device CONT may adjust the inert gas supply unit GSN and the exhaust unit EHN so that at least the storage chamber RMN is in an inert gas atmosphere. As a result, the state in which the gate valve G3 and the gate valve G4 are closed may be an environment in which only the storage chamber RMN is adjusted.

In addition, the control device CONT may be in a state in which one of the gate valve G3 and the gate valve G4 is opened, and the inert gas supply unit GSN and the exhaust unit EHN may be adjusted as the other state.

In addition, in the environment adjustment operation of the storage chamber RMP, the storage chamber RMN, and the storage chamber RM1, the inert gas supply unit GSN and the exhaust unit EHN provided in the connection processing chamber CBN are used. . For example, the environment adjustment operation of the storage chamber RMP, the storage chamber RMN, and the storage chamber RM1 may be performed using the inert gas supply unit GS2 and the exhaust unit EH2 of the second processing chamber CB2.

Further, in the above-described embodiment, as a pretreatment for applying the coating liquid Q to the substrate S, the treatment for removing the oxide film formed on the surface of the back surface electrode formed on the substrate S is described as an example. This is limited to other treatments. In the above embodiment, the case where the substrate S is washed after the excessive oxide film removal treatment is exemplified, but the cleaning treatment may be performed separately.

In addition, in the above-described embodiment, as the oxide film removing process, the process of ultrasonically supplying the substrate S or spraying the ammonia water is exemplified, but the invention is not limited thereto. For example, as shown in FIG. 9, the surface treatment apparatus 60 may be configured to supply the ammonia water 62 onto the substrate S by stirring. Further, in this case, a configuration in which ultrasonic waves are added to the agitator 61 may be employed.

Further, for example, as shown in FIG. 10, the substrate S may be immersed in the ammonia water 62. In this case, for example, the ammonia water 62 may be placed in the tank, and the roller member 49 of the substrate transfer mechanism TRP may be disposed in the groove. Thereby, since the ammonia water 62 is disposed in the transport path of the substrate S, the surface of the substrate S can be processed by merely performing the operation of transporting the substrate S.

In addition to these configurations, for example, the ammonia water 62 may be subjected to a sputtering treatment using an inactive atom (for example, an argon atom or the like) on the substrate S. In this case, the oxide film formed on the surface of the back surface electrode on the substrate S can be removed. In addition, in this case, the liquid is not used, and the advantage of the drying process can be omitted.

The preferred embodiments of the present invention have been described above, but the present invention is not limited to the embodiments. Additions, omissions, substitutions, and other modifications can be made without departing from the scope of the invention. The present invention is not limited by the foregoing description, but is only limited by the scope of the appended claims.

CTR‧‧‧ coating device

CONT‧‧‧ control device

S‧‧‧Substrate

PRE‧‧‧Pre-Processing Department

CBP‧‧‧Pre-treatment processing room

CNE‧‧‧Connecting Department

CBN‧‧‧ Connection Processing Room

PCS‧‧‧Substrate Processing Department

CB1‧‧‧First Processing Room

CT‧‧‧ Coating Department

NZ‧‧‧ slit nozzle

RMP, RMN, RM1‧‧‧ containment room

TRP, TRN, TR1‧‧‧ substrate transport mechanism

61‧‧‧Ammonia

RS‧‧·cleaning department

Q‧‧‧Liquid

L‧‧‧ coating film

Fig. 1 is a view showing the configuration of a coating apparatus according to a first embodiment of the present invention.

Fig. 2A is a view showing the configuration of a slit nozzle.

Fig. 2B is a view showing the configuration of a slit nozzle.

Fig. 3 is a view showing the operation of the coating apparatus of the embodiment.

Figure 4 is the same action diagram.

Figure 5 is the same action diagram.

Figure 6 is the same action diagram.

Fig. 7 is a view showing the configuration of a coating apparatus according to a second embodiment of the present invention.

Fig. 8 is a view showing the configuration of a coating apparatus according to a third embodiment of the present invention.

Fig. 9 is a view showing another configuration of the coating device of the embodiment.

Fig. 10 is a view showing another configuration of the coating apparatus of the embodiment.

48, 49, 50, 51, 52, 53, 54‧‧‧ Roller components

71‧‧‧ gas cylinder

72, 82‧‧‧ gas pipe

73, 83‧‧‧Exhaust drive source

74, 84‧‧‧ exhaust pipe

90, 91, 92, 93, 94‧‧‧ Connections

90a, 91a, 92a, 93a, 94a‧‧‧Inactive gas recovery pipe

95, 96, 97, 98, 99‧‧‧ Connections

95a, 96a, 97a, 98a, 99a‧‧‧Inactive gas supply pipe

CB1‧‧‧First Processing Room

CB2‧‧‧Second treatment room

CB3‧‧‧ Third Processing Room

CB4‧‧‧ Fourth Processing Room

CBL‧‧‧Lock load chamber

CBN‧‧‧ Connection Processing Room

CBP‧‧‧Pre-treatment processing room

CL‧‧‧Cooling Department

CNE‧‧‧Connecting Department

CONT‧‧‧ control device

CT‧‧‧ Coating Department

CTR‧‧‧ coating device

EH2, EHN‧‧‧Exhaust Department

EN1-EN4, ENL, ENN, ENP‧‧‧ substrate transfer

EX1-EX4, EXL, EXN, EXP‧‧‧ substrate export

G1-G8‧‧‧ gate valve

GS2, GSN‧‧‧Inactive Gas Supply Department

HT2, HT3‧‧‧ heating department

LDR‧‧‧Substrate Loading Department

MN‧‧Maintenance Department

NA‧‧‧Nozzle drive mechanism

NTC‧‧‧Nozzle Front End Management Unit

NZ‧‧‧ slit nozzle

PCS‧‧‧Substrate Processing Department

PRE‧‧‧Pre-Processing Department

RML, RMP, RMN, RM1-RM4‧‧‧ containment room

RS‧‧·cleaning department

S‧‧‧Substrate

TRL‧‧‧ substrate transport mechanism

TRP, TRN, TR1-TR4‧‧‧ substrate transport mechanism

Claims (14)

A coating apparatus comprising: a coating portion that applies a liquid material containing an oxidizable metal to a substrate; a processing portion before pretreatment of the substrate before applying the liquid material; and The coating space for applying the liquid material via the coating portion and the connection space for the processing space before the pre-treatment via the pre-processing unit are connected, and the environment in which the connection space is adjustably provided is inactive The connection of the environment of the gas. The coating device according to claim 1, further comprising a first supply unit that supplies the inert gas to the connection space. The coating device according to claim 1, further comprising a second supply unit that supplies the inert gas to the pretreatment space. The coating device according to claim 1, further comprising a third supply unit that supplies the inert gas to the coating space. The coating device according to claim 1, further comprising a processing chamber portion surrounding at least one of the pretreatment space and the connection space surrounding the coating space. The coating apparatus according to claim 5, wherein the processing chamber portion has a lock load chamber surrounding the connection space. The coating device according to claim 1, wherein Further, the present invention further includes a suction portion that attracts the coating space, at least one of the pretreatment space and the connection space. The coating device according to claim 1, further comprising a conveying unit that conveys the substrate between the pretreatment space and the connection space in the coating space. The coating device according to claim 1, wherein the substrate is formed with a metal on a surface thereof. The coating device according to claim 1, wherein the liquid system contains hydrazine. The coating apparatus according to claim 1, wherein the substrate is provided with a back surface electrode, and the pretreatment is an oxide film removal treatment for removing an oxide film from the back surface electrode. The coating apparatus according to claim 11, wherein the oxide film removal treatment includes at least one of a treatment of the substrate via an alkaline solution and a sputtering of the substrate using an inactive atom. . The coating apparatus according to claim 12, wherein the substrate is subjected to at least one of treatment with ammonia water or treatment with ammonia vapor through the treatment of the alkaline solution. The coating apparatus according to any one of the preceding claims, wherein the pretreatment is a washing treatment for washing the substrate.