201249964 、 六、發明說明： 【發明所屬之技術領域】 [0001] 此申請案主張來自於2011年6月10日在韓國智慧財產局申 請的韓國專利申請案編號1 0-201 1-00560 75的優先權， 其全部揭露内容併入於本文中以作為參考。 本發明有關一種用於結晶矽晶圓的紋理蝕刻溶液組成物 ，能夠藉由形成具有一致的微金字塔結構的該結晶石夕晶 圓的表面而改進光吸收功效’以及一種紋理姓刻方法。 (:、 【先前技術】 [0002] 近年來，太陽能電池已快速普及，且熟知為下個世代的 能源以及直接轉換乾淨能量的電子裝置，也就是，將陽 光轉成電。這種太陽能電池原則上具有包含矽以及硼加 至其中的P型矽半導體，且包含PN接面半導體基板，其中 原則上包含具有矽以及硼加至其中的P型石夕半導體，以及 藉由將磷（P)擴散入該P型矽半導體的表面而形成N型矽 半導體層。 Q 當光’例如陽光，照射具有由PN接面提供的電場的基板 時’半導體中的電子（-)以及電洞（+ )被激發，且這 種激發的電子（-)以及電洞（+ )可自由且隨機地在該 • 半導體内移動。在此情況中，由該PN接面形成的電場内 的電子（-)可移動至該N型半導體中，而該電洞（+ )移 動至該P型半導體。如果在該P型半導體以及該N型半導體 的表面上都提供電極以將電子朝向外部電路流動，即產 生電流。基於這種原理，陽光被轉換成電能。因此，為 了改進陽光轉換效率，PN接面半導體基板的每單位區域 1013279245-0 的電輸出應被盡可能地增加，為了這種目的，在最大化 1011116#^^^ A〇101 帛 3 頁 / 共 20 ! 201249964 光吸收度的同時必須減少反射率。考慮前述情況，構成 PN接面半導體基板的用於太陽能電池的矽晶圓應具有形 成在其表面上的微金字塔結構，且可提供有抗反射的薄 膜。已被紋理化成微金字塔結構的矽晶圓表面可減少具 有廣範圍波長的入射光的反射率，隨之增加吸收光的量 。因此’太陽能電池的效能，也就是該太陽能電池的效 率可被提高。 用於將石夕晶圓表面紋理化成微金字塔結構的方法已被揭 露’例如，美國專利編號4, 137, 123描述了一種矽紋理 姓刻溶液，其中將〇· 5至1〇重量％的矽溶解於非等向性蝕 刻（常為「乾链刻」）溶液中，該等向性触刻溶液包含〇 至75體積％的乙二醇、〇. 〇5至5〇重量％的氫氧化鉀以及 剩餘部分為水。然而，這種蝕刻溶液導致金字塔形成的 失敗’因此增加了光反射率，並造成光吸收功效的降低 此外’歐洲專利編號0477424提出了 一種將氧進料至紋理 钱刻溶液的紋理蝕刻方法，也就是執行通氣過程達數分 鐘’該紋理蝕刻溶液包括溶解於乙二醇、氫氧化鉀以及 該剩餘部分為水的混合物中的矽。然而，上述蝕刻方法 造成金字塔形成的失敗，隨之增加光反射率，同時降低 光吸收功效，且此外，具有進一步需要替代性的通氣裝 置的缺點。 此外’韓國專利註冊編號0180621揭露了一種紋理蝕刻溶 液’該纹理蝕刻溶液包含〇· 5至5%的氫氧化鉀溶液' 3至 2〇體積％的異丙醇以及75至96. 5體積％的去離子水的混 合物； 單編號 A0101 美國專利編號6, 451，218揭露了一種包括鹼土金 第4頁/共20頁 1013279245-0 201249964 屬化合物、異丙醇、水性鹼性乙二醇以及水的紋理蝕刻 溶液。然而，由於每種上述蝕刻溶液包括具有相對低彿 點的異丙醇，且此材料必須在紋理化期間被額外導入， 可能造成關於生產力與成本上的經濟不利。此外，該額 外導入的異丙醇導致該蝕刻溶液的溫度梯度，因此在矽 晶圓表面上的區域内增加了紋理品質的偏差，且最終降 低均勻性。 【發明内容】 [0003]因此，本發明的目的是提供一種用於結晶矽晶圓的紋理 蝕刻溶液組成物，當在該結晶矽晶圓表面上提供微金字 塔結構時，能夠改進區域内的紋理均勻性。 本發明的另一個目的是提供一種用於結晶矽晶圓的紋理 餘刻溶液組成物，而不需應用通氣過程以及在紋理化期 間導入額外的钱刻溶液成分。 此外，本發明的更另一個目的是提供一種使用用於結晶 石夕晶圓的前述紋理蝕刻溶液組成物的紋理蝕刻方法。 〇 為了完成上述目的，本發明提供下述。 (1) 一種用於結晶矽晶圓的紋理蝕刻溶液組成物，包含 .1至20重量％的鹼性化合物；1〇_9至1〇重量％的多醣 ;10 9至10重量％的二氧化矽化合物；以及作為剩餘部 分的水。 (2)根據上述第（1 )項所述的組成物，該鹼性化合物 選自氫氧化鉀、氫氧化鈉、氫氧化銨、四羥甲基銨以及 四經乙基銨所組成的群組中的至少其中之一。 (3)根據上述第（丨）項所述的組成物，該多醣選自聚 10111169#單編號 Α0101 第5頁/共20頁 葡萄糖化合物、聚果糖化合物、聚甘露糖化合物、 mm t牛 1013279245-0 201249964 乳糖化合物以及其金屬鹽類所組成的群組中的至少其中 —— 〇 (4) 根據上述第（3)項所述的組成物，該多醣為至少 一聚葡萄糖化合物，該聚葡萄糖化合物選自纖維素、二 甲基胺基纖維素、二乙基胺基乙基纖維素、乙基羥乙基 纖維素、甲基羥乙基纖維素、4-胺基苄基纖維素、三乙 基胺基乙基纖維素、氰基乙基纖維素、乙基纖維素、甲 基纖維素、羧甲基纖維素、羧乙基纖維素、羥乙基纖維 素、羥丙基纖維素、藻酸、直鏈澱粉、支鏈澱粉、果膠 、澱粉、糊精、α-環糊精、万-環糊精、7-環糊精、羥 丙基-yS-環糊精、甲基環糊精、類糊精、類糊精硫 酸鈉、皂素、肝糖、酵母聚糖、香菇多糖、裂褶菌多糖 以及其金屬鹽類所組成的群組。 (5) 根據上述第（3)項所述的組成物，該多醣具有 5, 000至1，000,000的平均分子量。 (6) 根據上述第（1)項所述的組成物，該二氧化矽化 合物選自超細二氧化矽粉末；以Na9〇穩定的矽溶膠溶液 f201249964, VI, invention description: [Technical field of invention] [0001] This application claims from Korean Patent Application No. 10-201 1-00560 75 filed on June 10, 2011 at the Korea Intellectual Property Office. Priority is hereby incorporated by reference in its entirety. The present invention relates to a texture etching solution composition for a crystalline germanium wafer capable of improving light absorption efficiency by forming a surface of the crystallographic circle having a uniform micropyramid structure and a texture surrogate method. (:, [Prior Art] [0002] In recent years, solar cells have become rapidly popular, and are known as the next generation of energy and electronic devices that directly convert clean energy, that is, convert sunlight into electricity. There is a P-type germanium semiconductor containing germanium and boron added thereto, and comprises a PN junction semiconductor substrate, which in principle comprises a P-type SiGe semiconductor having germanium and boron added thereto, and by diffusing phosphorus (P) The surface of the P-type germanium semiconductor is formed to form an N-type germanium semiconductor layer. Q When light, such as sunlight, illuminates a substrate having an electric field provided by a PN junction, electrons (-) and holes (+) in the semiconductor are Excited, and such excited electrons (-) and holes (+) are freely and randomly moved within the semiconductor. In this case, electrons (-) in the electric field formed by the PN junction are movable In the N-type semiconductor, the hole (+) is moved to the P-type semiconductor. If an electrode is provided on the surface of the P-type semiconductor and the N-type semiconductor to flow electrons toward an external circuit, electricity is generated Based on this principle, sunlight is converted into electrical energy. Therefore, in order to improve the solar conversion efficiency, the electrical output per unit area 1013279245-0 of the PN junction semiconductor substrate should be increased as much as possible, for this purpose, to maximize 1011116#^^^ A〇101 帛3 pages / total 20 ! 201249964 The light absorbance must be reduced at the same time. Considering the above, the germanium wafer for solar cells constituting the PN junction semiconductor substrate should have a micro-pyramidal structure on the surface and an anti-reflective film. The surface of the germanium wafer that has been textured into a micro-pyramid structure reduces the reflectivity of incident light with a wide range of wavelengths, which in turn increases the amount of light absorbed. The efficiency of a solar cell, that is, the efficiency of the solar cell can be improved. A method for texturing the surface of a stone wafer into a micropyramid structure has been disclosed. For example, U.S. Patent No. 4,137,123 describes a 矽a texture engraved solution in which 矽·5 to 1% by weight of lanthanum is dissolved in an anisotropic etch (often a "dry chain engraving") solution, The tropism solution comprises cerium to 75% by volume of ethylene glycol, 〇. 〇 5 to 5% by weight of potassium hydroxide and the balance being water. However, this etching solution leads to failure of pyramid formation' thus increasing Light reflectivity and resulting in reduced light absorption efficiency. Further, European Patent No. 0477424 proposes a texture etching method for feeding oxygen to a textured money engraving solution, that is, performing aeration process for several minutes'. The texture etching solution includes dissolution in Ethylene glycol, potassium hydroxide, and the remainder are ruthenium in a mixture of water. However, the above etching method causes failure of pyramid formation, which in turn increases light reflectivity while reducing light absorption efficiency, and furthermore, there is a further need for replacement. Disadvantages of sexual ventilation devices. In addition, the 'Korean Patent Registration No. 0180621 discloses a texture etching solution. The texture etching solution contains 〇·5 to 5% potassium hydroxide solution 3% to 2 vol% of isopropyl alcohol and 75 to 96.5% by volume. A mixture of deionized water; U.S. Patent No. 6,451,218 discloses a compound comprising alkaline earth gold, page 4 of 20, 1013279245-0 201249964, isopropyl alcohol, aqueous alkaline glycol, and water. Texture etching solution. However, since each of the above etching solutions includes isopropanol having a relatively low point, and this material must be additionally introduced during texturing, it may cause economic disadvantages in terms of productivity and cost. In addition, the extra isopropyl alcohol introduced causes a temperature gradient of the etching solution, thereby increasing the variation in texture quality in the region on the surface of the wafer and ultimately reducing the uniformity. SUMMARY OF THE INVENTION [0003] Accordingly, it is an object of the present invention to provide a texture etching solution composition for a crystalline germanium wafer that can improve texture in a region when a micropyramid structure is provided on the surface of the crystalline germanium wafer. Uniformity. Another object of the present invention is to provide a texture engraving solution composition for crystallizing tantalum wafers without the use of aeration processes and the introduction of additional solvent components during texturing. Further, it is still another object of the present invention to provide a texture etching method using the foregoing texture etching solution composition for crystallizing a silicon wafer. 〇 In order to accomplish the above object, the present invention provides the following. (1) A texture etching solution composition for crystallizing a germanium wafer, comprising: 1 to 20% by weight of a basic compound; 1〇_9 to 1% by weight of a polysaccharide; and 10 9 to 10% by weight of a dioxide a hydrazine compound; and water as the remainder. (2) The composition according to the above item (1), wherein the basic compound is selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonium hydroxide, tetramethylolmonium, and tetraethylammonium. At least one of them. (3) The composition according to the above item (丨), which is selected from the group consisting of poly 10111169#单号Α0101 Page 5 of 20 glucose compound, poly fructose compound, polymannose compound, mm t cattle 1013279245- 0 201249964 At least one of the group consisting of a lactose compound and a metal salt thereof - (4) The composition according to the above item (3), wherein the polysaccharide is at least one polydextrose compound, the polydextrose compound Selected from cellulose, dimethylamino cellulose, diethylaminoethyl cellulose, ethyl hydroxyethyl cellulose, methyl hydroxyethyl cellulose, 4-aminobenzyl cellulose, triethyl Aminoethylcellulose, cyanoethylcellulose, ethylcellulose, methylcellulose, carboxymethylcellulose, carboxyethylcellulose, hydroxyethylcellulose, hydroxypropylcellulose, algae Acid, amylose, amylopectin, pectin, starch, dextrin, α-cyclodextrin, wan-cyclodextrin, 7-cyclodextrin, hydroxypropyl-yS-cyclodextrin, methyl cyclodextrin Refined, dextrin, sodium dextrin, saponin, glycogen, zymosan, lentinan, schizophyllum A group of polysaccharides and their metal salts. (5) The composition according to the above item (3), which has an average molecular weight of 5,000 to 1,000,000. (6) The composition according to the above item (1), wherein the cerium oxide compound is selected from the group consisting of ultrafine cerium oxide powder; a cerium sol solution stabilized with Na9?
L i I ，•以K2〇穩定的矽溶膠溶液；以酸性溶液穩定的矽溶膠溶 液；以NHq穩定的矽溶膠溶液；以至少一有機溶劑穩定的 Ο 矽溶膠溶液，該有機溶劑選自乙醇、丙醇、乙二醇、丁 酮以及甲基異丁酮所組成的群組；液體矽酸鈉；液體矽 酸鉀；以及液體矽酸鋰所組成的群組的至少其中之一。 (7) 根據上述第（1 )項所述的組成物，該組成物更包 含至少一氟界面活性劑，該氟界面活性劑選自全氟烷基 羧酸鹽、全氟烷基磺酸鹽、全氟烷基硫酸鹽、全氟烷基 磷酸鹽、全氟烷基胺鹽、全氟烷基季銨鹽、全氟烷基羧 116#單編號皿01 第6頁/共20頁 1013279245-0 201249964 基甜木驗i⑼基縣甜菜驗、氟絲聚氧乙稀以及 全i炫基聚氡乙烯所組成的群故，其中每個具有⑴請 碳原子的烧基。 (8)種、α阳矽晶圓的紋理蝕刻方法，包含：將該結晶 石夕晶圓浸沒於根據上述第⑴至⑺項任一所述的紋 理蚀刻溶㈣成物巾，倾該組成物，或將該結晶碎晶 圓❿又该組成物中，㈤時將該組成物喷麗於該晶圓上。 (9 )根據上述第（8 )項所述的方法，該浸沒、噴灌或 () 浸沒與喷灑是在5〇至l〇『C下進行30秒至60分鐘。 根據本發㈣於結晶_晶目的㈣制溶液組成物以及 紋理蝕刻方法，可藉由改進該結晶矽晶圓表面上區域内 的紋理均勻性而最大化陽光吸收量，藉此減少光反射率 ，隨之增強光吸收功效。 此外，相較於傳統的紋理飯刻溶液組成物，本發明既不 需要導入額外的蝕刻溶液成分，也不需在紋理化期間應 用通氣設備，因此增強品質以及生產力，同時達成關於 成本的經濟優勢。 ϋ 【實施方式】 [0004]本發明提供一種用於結晶矽晶圓的紋理蝕刻溶液組成物 ’以及此外’一種使用該紋理蝕刻溶液組成物的結晶石夕 晶圓紋理钮刻方法。 在下文中’將給出下述描述以更具體地解釋本發明。 根據本發明用於結晶矽晶圓的紋理蝕刻溶液組成物可包 含具有最理想含量的：鹼性化合物；多醣；二氧化矽化 合物；以及作為剩餘部分的水。 更特別的是’前述組成物包括〇. 1至2〇重量％的鹼性化合 1013279245-0 10111169#單編號A〇1〇l 第7頁/共20頁 201249964 物；1(Γ9至10重量％的多醣；10_9至10重量％的二氧化 矽化合物；以及作為剩餘部分的水。 驗性化合物是蚀刻結晶石夕晶圓表面的成分，且該成分的 種類不特別受限制。例如，使用了氫氧化鉀、氫氧化鈉 、氫氧化敍、四經曱基銨、四經乙基銨，等等，且在這 些之中，較佳使用氫氧化鉀或氫氧化鈉。這些化合物被 單獨或以其二或更多個的組合而使用。L i I , a K 2 〇 stabilized ruthenium sol solution; an acidic solution stabilized ruthenium sol solution; a NHq stabilized ruthenium sol solution; and an at least one organic solvent stable ruthenium sol solution selected from the group consisting of ethanol, a group consisting of propanol, ethylene glycol, methyl ethyl ketone, and methyl isobutyl ketone; at least one of the group consisting of liquid sodium citrate; liquid potassium citrate; and liquid lithium niobate. (7) The composition according to the above item (1), further comprising at least one fluorosurfactant selected from the group consisting of perfluoroalkyl carboxylates and perfluoroalkyl sulfonates , perfluoroalkyl sulfate, perfluoroalkyl phosphate, perfluoroalkylamine salt, perfluoroalkyl quaternary ammonium salt, perfluoroalkyl carboxylate 116# single number dish 01 Page 6 / Total 20 pages 1013279245- 0 201249964 Base sweet wood test i (9) Kexian sugar beet test, fluorine silk polyoxyethylene and all i-based polystyrene group, each of which has (1) carbon atom burning base. (8) A method for etching a texture of an alpha-anyang wafer, comprising: immersing the crystal lithographic wafer in a texture etching solution according to any one of the above items (1) to (7), and pouring the composition Or, the crystallized wafer is smashed into the composition, and (5) the composition is sprayed onto the wafer. (9) The method according to the above (8), wherein the immersing, sprinkling or () immersion and spraying is performed at 5 Torr to 1 Torr for 30 seconds to 60 minutes. According to the solution composition of the crystal (crystal) (4) and the texture etching method according to the present invention, the amount of sunlight absorption can be maximized by improving the texture uniformity in the region on the surface of the crystallization wafer, thereby reducing the light reflectance. This will enhance the light absorption. In addition, the present invention does not require the introduction of additional etching solution components or the application of venting equipment during texturing, thereby enhancing quality and productivity while achieving economic advantages in terms of cost compared to conventional textured rice solution compositions. . EMBODIMENT [0004] The present invention provides a texture etching solution composition for crystallizing germanium wafers and, in addition, a crystalline stone wafer texture marking method using the texture etching solution composition. The following description will be given hereinafter to explain the present invention more specifically. The texture etching solution composition for a crystalline germanium wafer according to the present invention may contain an optimum content: a basic compound; a polysaccharide; a ceria compound; and water as a remainder. More specifically, 'the aforementioned composition includes 〇. 1 to 2 〇% by weight of the basic compound 1013279245-0 10111169# single number A 〇1〇l page 7 / total 20 pages 201249964; 1 (Γ 9 to 10% by weight Polysaccharide; 10_9 to 10% by weight of cerium oxide compound; and water as the remainder. The organic compound is a component which etches the surface of the crystal wafer, and the kind of the component is not particularly limited. For example, hydrogen is used. Potassium oxide, sodium hydroxide, hydrogen hydroxide, tetra-decyl ammonium, tetraethylammonium, etc., and among these, potassium hydroxide or sodium hydroxide is preferably used. These compounds are used alone or in their Two or more combinations are used.
相對於總10 0重量％的用於結晶矽晶圓的理蝕刻溶液化合 物，驗性化合物可包括於0.1至20重量％的量中，較佳為 1至5重量％。當該驗性化合物的含量在前述範圍内時， 可進行蝕刻該矽晶圓的表面。 根據本發明用於結晶矽晶圓的紋理蝕刻溶液組成物可進 一步包括具有最理想含量的多醋。The test compound may be included in an amount of from 0.1 to 20% by weight, preferably from 1 to 5% by weight, based on the total of 100% by weight of the etch solution compound for crystallization of the ruthenium wafer. When the content of the test compound is within the above range, the surface of the tantalum wafer can be etched. The texture etching solution composition for a crystalline germanium wafer according to the present invention may further comprise a polyacetate having an optimum content.
多醣是包含二或更多個單糖的糖類，以經由糖苷鍵結而 形成大分子，預防過度餘刻，並有效地控制藉由使用驗 性化合物的蝕刻加速，以製備一致的微金字塔，同時快 速地減少由餘刻掉石夕晶圓表面而產生的氫氣泡，藉此預 防氣泡沾黏的發生。 多醣的範例可包括；聚葡萄糖化合物、聚果糖化合物、 聚甘露糖化合物、聚半乳糖化合物以及其金屬鹽類。在 這些之中，較佳使用聚葡萄糖化合物以及其金屬鹽類（ 例如，鹼性金屬鹽類）。可單獨或與其二或更多個組合 而使用前述物質。 聚葡萄糖化合物可包括，例如；纖維素、二曱基胺基乙 基纖維素、二乙基胺基乙基纖維素、乙基羥乙基纖維素 、甲基羥乙基纖維素、4-胺基苄基纖維素、三乙基胺基 A0101 第8頁/共20頁 1013279245-0 201249964 乙基纖維素、氰基乙基纖維素、乙基纖維素、甲基纖維 素、羧甲基纖維素、羧乙基纖維素、羥乙基纖維素、羥 丙基纖維素、藻酸、直鏈澱粉、支鏈澱粉、果膠、澱粉 、糊精、α-環糊精、環糊精、環糊精、經丙基-環糊精、甲基-yS-環糊精、類糊精、類糊精硫酸鈉、 皂素、肝糖、酵母聚糖、香菇多糖、裂褶菌多糖以及其 金屬鹽類。 多醣可具有5, 000至1，000,000,以及較佳為50, 000至 200, 000的分子量。 相對於1 00重量％的用於結晶矽晶圓的紋理蝕刻溶液組成 物，多醣可包括於1〇_9至1〇重量％，以及較佳為1〇_6至1 重量％的含量中。如果該多醣的含量在前述範圍内，可 防止過度蝕刻，並可有效地控制蝕刻加速。當該含量超 過10重量％時，當使用鹼性化合物時，蝕刻率可能會突 然降低，導致形成想要微金字塔的困難。 用於結晶矽晶圓的紋理蝕刻溶液組成物可進一步包括二 氧化破化合物。 二氧化矽化合物可被物理上地吸附至結晶矽晶圓的表面 ，並作為遮罩，因此使該矽晶圓表面能為微金字塔形式 〇 二氧化矽化合物可包括粉末狀的、膠體狀的溶液或液體 金屬矽酸鹽化合物。更特別的是，超細二氧化矽粉末； 以Na2〇穩定的矽溶膠溶液；以1(2〇穩定的矽溶膠溶液；以 酸性溶液穩定的矽溶膠溶液；以NHq穩定的矽溶膠溶液； Ο 以至少一有機溶劑穩定的矽溶膠溶液，該有機溶劑選自 乙醇、丙醇、乙二醇、丁酮以及曱基異丁酮所組成的群 i〇mi6#單編請01 第9頁/共20頁 1013279245-0 201249964 組；液體矽酸鈉；液體矽酸鉀；液體矽酸鋰等等。可單 獨或以其二個或更多個的組合而使用前述材料。 相對於總1 00重量％的用於結晶矽晶圓的紋理蝕刻溶液化 合物，二氧化矽化合物可包括於1〇_9至10重量％以及， 較佳為，10 6至1重量％的量中。如果該量在前述範圍内 ，可在該結晶矽晶圓表面上輕易地形成微金字塔。 根據本發明用於結晶矽晶圓的紋理蝕刻溶液組成物可進 一步包括氟界面活性劑。A polysaccharide is a saccharide containing two or more monosaccharides to form a macromolecule via glycosidic bonding, preventing excessive remnant, and effectively controlling etch acceleration by using an inspective compound to prepare a uniform micropyramid, while Quickly reduce the hydrogen bubbles generated by the surface of the wafer, so as to prevent the occurrence of bubble sticking. Examples of the polysaccharide may include; a polydextrose compound, a polyfructose compound, a polymannose compound, a polygalactose compound, and a metal salt thereof. Among these, polydextrose compounds and metal salts thereof (e.g., basic metal salts) are preferably used. The foregoing substances may be used singly or in combination of two or more thereof. The polydextrose compound may include, for example, cellulose, dimercaptoaminoethylcellulose, diethylaminoethylcellulose, ethylhydroxyethylcellulose, methylhydroxyethylcellulose, 4-amine Benzyl cellulose, triethylamine A0101 Page 8 / Total 20 pages 1013279245-0 201249964 Ethyl cellulose, cyanoethyl cellulose, ethyl cellulose, methyl cellulose, carboxymethyl cellulose , carboxyethyl cellulose, hydroxyethyl cellulose, hydroxypropyl cellulose, alginic acid, amylose, amylopectin, pectin, starch, dextrin, α-cyclodextrin, cyclodextrin, cyclodextrin Fine, propyl-cyclodextrin, methyl-yS-cyclodextrin, dextrin, sodium dextrin, saponin, glycogen, zymosan, lentinan, Schizophyllum polysaccharide and its metal salt class. The polysaccharide may have a molecular weight of from 5,000 to 1,000,000, and preferably from 50,000 to 2,000,000. The polysaccharide may be included in a content of from 1 〇 9 to 1% by weight, and preferably from 1 〇 6 to 1% by weight, relative to 100% by weight of the texture etching solution composition for crystallizing the ruthenium wafer. If the content of the polysaccharide is within the foregoing range, over etching can be prevented, and the etching acceleration can be effectively controlled. When the content exceeds 10% by weight, when a basic compound is used, the etching rate may be remarkably lowered, resulting in difficulty in forming a desired micropyramid. The texture etching solution composition for crystallizing the germanium wafer may further include a dioxide breaking compound. The cerium oxide compound can be physically adsorbed onto the surface of the crystallization ruthenium wafer and used as a mask, thereby enabling the surface of the ruthenium wafer to be in the form of a micropyramid. The ruthenium dioxide compound can include a powdery, colloidal solution. Or a liquid metal citrate compound. More particularly, ultrafine cerium oxide powder; cerium sol solution stabilized by Na2 hydrazine; 1 (2 〇 stable cerium sol solution; cerium sol solution stabilized with acidic solution; cerium sol solution stabilized with NHq; Ο a cerium sol solution stabilized with at least one organic solvent selected from the group consisting of ethanol, propanol, ethylene glycol, methyl ethyl ketone, and decyl isobutyl ketone. i〇mi6# 单编请01 page 9 / total 20 pages 1013279245-0 201249964 Group; liquid sodium citrate; liquid potassium citrate; liquid lithium niobate, etc. The foregoing materials may be used singly or in combination of two or more thereof. Relative to total 100% by weight The texture etching solution compound for crystallizing the germanium wafer, the cerium oxide compound may be included in an amount of from 1 9 9 to 10% by weight, and preferably from 10 6 to 1% by weight. If the amount is in the foregoing range The micropyramid can be easily formed on the surface of the crystalline germanium wafer. The texture etching solution composition for crystallizing the germanium wafer according to the present invention may further include a fluorine surfactant.
氟界面活性劑以及聚氧化合物為基礎的界面活性劑可減 少蝕刻溶液組成物的表面張力，因此促進結晶矽晶圓表 面潤濕性的改進，並最終防止被鹼性化合物過度蝕刻。 氟界面活性劑的種類不被特別限制，但可包括，例如： 陰離子界面活性劑，例如全氟烷基羧酸鹽、全氟烷基磺 酸鹽、全氟烷基硫酸鹽、全氟烷基磷酸鹽，等等；陽離 子界面活性劑，例如全氟烷基胺鹽、全氟烷基季銨鹽， 等等；兩性界面活性劑，例如全氟烧基叛基甜菜驗、全 氟烷基磺基甜菜鹼，等等；非離子性界面活性劑，例如 氟烷基聚氧乙烯、全氟烷基聚氧乙烯，等等。這種化合 物可具有1至30個碳原子的烷基。可單獨或與其二個或更 多個組合而使用這些材料。 相對於總100重量％的用於結晶矽晶圓的紋理蝕刻溶液組 成物，氟界面活性劑可包括於10_9至10重量％以及，較 佳為10_6至1重量％的量中。如果該量在上述範圍内，可 有效地改進矽晶圓表面的潤濕性。 用於結晶矽晶圓的紋理蝕刻溶液組成物可進一步包括作 為組成物的總1 0 0重量％的剩餘部分的水。 1011116#早編號 A0101 第10頁/共20頁 1013279245-0 201249964 水的類型不受特別的限制，然而，較佳為去離子水以及 ，更佳為，用於半導體製程、具有18MQ/cm或更高特定 電阻的去離子水。 除了多醣之外’包含前述成分的根據本發明用於結晶矽 晶圓的紋理餘刻溶液組成物可包括二氧化矽化合物，藉 此藉由形成具有一致的微金字塔結構的該結晶矽晶圓的 表面而最大化陽光吸收的量，同時降低光反射率，隨之 增強光吸收功效。此外，該具創造性的紋理蝕刻溶液組 成物既不需導入額外的蝕刻溶液成分，也不需在紋理化 期間應用通氣設備，因此達到極佳的生產力以及關於成 本的經濟優勢。 根據本發明用於結晶矽晶圓的紋理蝕刻溶液組成物可被 適當地使用在常用的蝕刻過程中，例如浸潰、喷灑、嵌 入類型的蝕刻，等等。 本發明提供一種結晶矽晶圓的紋理蝕刻方法，使用上述 用於結晶發晶圓的紋理餘刻溶液組成物。 結晶矽晶圓的紋理蝕刻方法可包括將該結晶矽晶圓浸沒 於用於結晶矽晶圓的蝕刻溶液組成物中，喷灑該組成物 ，或將該結晶矽晶圓浸沒於其中時同時噴灑。 可不特別限制浸沒及/或喷灑的次數，在該浸沒以及喷灑 同時執行的例子中，也可不限制其操作順序。 浸沒、喷灑或浸沒以及喷灑可在50至10(TC進行30秒至 60分鐘。 第11頁/共20頁 1013279245—0 如上所述’根據本發明的結晶矽晶圓紋理蝕刻方法不需 導入額外的通氣設備以供應氧氣，因此，在關於開始生 產以及處理成本方面為經濟的，且即使藉由簡單的過程 10111169产單編號A〇101 筮11頁/共2〇頁 201249964 也能夠形成一致的微金字塔結構。 在下文中，將描述較佳的具體實施例，參照範例以及比 較性範例而更具體地了解本發明。然而，對於本領域的 技術人員而言，將顯而易見的是，這種具體實施例是提 供用於說明的目的，且不悖離本發明的範圍以及精神的 各種修飾以及改變是可能的，且如附帶申請專利範圍所 定義的，這種修飾以及改變充分地包括在本發明中。 範例 範例1 藉由混合4重量％的氫氧化鉀（Κ0Η) 、0.005重量％的 二乙基胺基乙基纖維素（DMAEC)、0.2重量％的液體矽 酸鈉（SSS)以及作為剩餘部分的去離子水而製備用於結 晶梦晶圓的紋理姓刻溶液組成物。 範例2至14以及比較性範例1至4 除了使用列於下述表1中的基本成分以及其含量之外，執 行與範例1中所描述的相同程序。這裡，該含量意指重量 %。 [0005][表 1 ] 1011116#單編號 A_ 第12頁/共20頁 1013279245-0 201249964The fluorosurfactant and the polyoxyl compound-based surfactant reduce the surface tension of the etching solution composition, thereby promoting the improvement of surface wettability of the crystallization wafer and ultimately preventing over-etching by the alkaline compound. The kind of the fluorosurfactant is not particularly limited, but may include, for example, an anionic surfactant such as a perfluoroalkyl carboxylate, a perfluoroalkylsulfonate, a perfluoroalkylsulfate, a perfluoroalkyl group. Phosphate, etc.; cationic surfactants, such as perfluoroalkylamine salts, perfluoroalkyl quaternary ammonium salts, etc.; amphoteric surfactants, such as perfluoroalkyl bet sugar beet test, perfluoroalkyl sulfonate Betaine, etc.; nonionic surfactants such as fluoroalkyl polyoxyethylene, perfluoroalkyl polyoxyethylene, and the like. This compound may have an alkyl group of 1 to 30 carbon atoms. These materials may be used singly or in combination of two or more thereof. The fluorosurfactant may be included in an amount of from 10 to 9 to 10% by weight, and preferably from 10 to 6 to 1% by weight, based on the total 100% by weight of the texture etching solution composition for the crystalline germanium wafer. If the amount is within the above range, the wettability of the surface of the tantalum wafer can be effectively improved. The texture etching solution composition for the crystalline germanium wafer may further comprise water as the remainder of the total of 100% by weight of the composition. 1011116# Early No. A0101 Page 10/Total 20 Page 1013279245-0 201249964 The type of water is not particularly limited, however, it is preferably deionized water and, more preferably, used in a semiconductor process, having 18 MQ/cm or more. Deionized water with a high specific resistance. A texture remnant solution composition for crystallizing a ruthenium wafer according to the present invention comprising a component other than a polysaccharide may include a ruthenium dioxide compound, thereby forming a crystallization wafer having a uniform micropyramid structure The surface maximizes the amount of sunlight absorbed while reducing the light reflectivity, which in turn enhances light absorption. In addition, the inventive texture etching solution composition requires no additional etching solution components or ventilation equipment during texturing, resulting in excellent productivity and economic advantages. The texture etching solution composition for a crystalline germanium wafer according to the present invention can be suitably used in a usual etching process such as dipping, spraying, embedding type etching, and the like. The present invention provides a texture etching method for a crystalline germanium wafer using the above-described texture remnant solution composition for crystallized wafers. The texture etching method of the crystalline germanium wafer may include immersing the crystalline germanium wafer in an etching solution composition for crystallizing the germanium wafer, spraying the composition, or simultaneously spraying the crystalline germanium wafer while being immersed therein . The number of times of immersion and/or spraying may not be particularly limited, and the order of operation may not be limited in the example in which the immersion and spraying are simultaneously performed. Immersion, spraying or immersion and spraying can be carried out at 50 to 10 (TC for 30 seconds to 60 minutes. Page 11/20 pages 1013279245-0) As described above, the crystallization wafer texture etching method according to the present invention is not required Introducing additional ventilation equipment to supply oxygen, so it is economical in terms of starting production and processing costs, and even with a simple process 10111169, order number A〇101 筮11 pages/total 2 pages 201249964 The present invention will be described more specifically hereinafter with reference to examples and comparative examples. However, it will be apparent to those skilled in the art that The embodiments are provided for illustrative purposes, and various modifications and changes are possible without departing from the scope and spirit of the invention, and such modifications and alterations are fully included in the present invention as defined by the appended claims. Example Example 1 By mixing 4% by weight of potassium hydroxide (Κ0Η), 0.005% by weight of diethylaminoethylcellulose (DMAEC), 0.2 The amount of liquid sodium citrate (SSS) and the remaining portion of deionized water were used to prepare a texture surname solution composition for the crystal dream wafer. Examples 2 to 14 and Comparative Examples 1 to 4 were used except Except for the basic components in Table 1 and their contents, the same procedure as described in Example 1 was performed. Here, the content means % by weight. [0005] [Table 1] 1011116#单号A_第12页/Total 20 pages 1013279245-0 201249964
鹼性化合物 多醣 二氧化靴潍 界面活_ 類型 含量 類型 含量 類型 含量 11 含量 獅 K0H 4 DMAEC 0.005 sss 0.2 • 範例2 K0H 4 EHEC 0.005 scs 0.5 - 範例3 K0H 4 MC 0.005 sss 0.2 _ K0H 4 HEC 0.005 scs 0.5 - - _5 K0H 2.5 CMC 0.02 sss 0.2 範例6 K0H 2 AA 0.02 scs 0.5 範例7 K0H 2 DSNa 0.01 sss 0.1 _ K0H 2 AP 0.005 sss 0.3 - 範例9 K0H 3 St 0.005 sss O.i - - 範例10 KOH 2 CMCNa 0.02 scs 0.3 - 範例Η KOH 2 AANa 0.02 scs 0.i - 範例12 K0H 2 CMCNa 0.02 scs 0.3 PFAS 0.001 範例13 K0H 2 AANa 0.02 scs 0.1 PFAP 0.001 範例14 K0H AANa 0.02 scs 03 PFA 0.001 臟 範例i K0H 2 - sss 0.2 - 比較性 翻2 K0H 2 AANa 0.02 - 比較性 範例3 K0H 2 AANa 0.02 sss 11 - * 比較性 範例4 K0H 2 AANa 11 sss 0.2 ' - 氬麵 DMAEC:二甲基胺基乙画素 EHEC:乙基羥乙繊素 MC:甲_§素 HEC:羥乙_素 CMC:羧甲麵素 AA:藻酸 馳:鑭精硫酗 AP:支醒 St:酿 CMCN8:羧甲《I素鈉 撤：藻_ SSS:讎鼸 SCSWHhO棰定的矽溶膠溶液 画:全臟藏_ 隱：全氟麵鼸 比較性範例5 5重量％的異丙 1013279245-0 藉由混合1·5重量％的氫氧化鉀（Κ0Η) 1()111169(^單編號Α0101 第13頁/共20頁 201249964 醇（I PA )以及作為剩餘部分的去離子水而製備用於結晶 石夕晶圓的紋理蚀刻溶液組成物。 比較性範例6 除了以乙二醇（EG)取代異丙醇（IPA)之外，已執行如 比較性範例5中所描述的相同程序。 比較性範例7 除了以曱基二甘醇（MDG)取代異丙醇（IPA)之外，已 執行如比較性範例5中所描述的相同程序。 比較性範例8 除了以單乙胺（MEA)取代異丙醇（ιρΑ)之外，已執行 如比較性範例5中所描述的相同程序。示範牲範例 藉由下述程序，將根據上述範例以及比較性範例的用於 結晶矽晶圓的每個製備的紋理蝕刻溶液組成物進行紋理 蝕刻效果的評估，其結果顯示於表2中： 將單晶矽晶圓基板於8〇°c下浸沒在用於單晶矽晶圓的製 備紋理蚀刻溶液組成物中達2 〇分鐘。 (1 )紋理均勻性Basic compound polysaccharide dioxide shoe 潍 interface activity _ type content type content type content content content lion K0H 4 DMAEC 0.005 sss 0.2 • example 2 K0H 4 EHEC 0.005 scs 0.5 - example 3 K0H 4 MC 0.005 sss 0.2 _ K0H 4 HEC 0.005 scs 0.5 - - _5 K0H 2.5 CMC 0.02 sss 0.2 Example 6 K0H 2 AA 0.02 scs 0.5 Example 7 K0H 2 DSNa 0.01 sss 0.1 _ K0H 2 AP 0.005 sss 0.3 - Example 9 K0H 3 St 0.005 sss Oi - - Example 10 KOH 2 CMCNa 0.02 Scs 0.3 - Example Η KOH 2 AANa 0.02 scs 0.i - Example 12 K0H 2 CMCNa 0.02 scs 0.3 PFAS 0.001 Example 13 K0H 2 AANa 0.02 scs 0.1 PFAP 0.001 Example 14 K0H AANa 0.02 scs 03 PFA 0.001 Dirty Example i K0H 2 - sss 0.2 - Comparative Turnover 2 K0H 2 AANa 0.02 - Comparative Example 3 K0H 2 AANa 0.02 sss 11 - * Comparative Example 4 K0H 2 AANa 11 sss 0.2 ' - Argon-faced DMAEC: Dimethylamino-Bisin EHEC: Ethyl Hydroxyacetin MC: A- § HEC: hydroxy-B-CMC: Carboxy-Anolin AA: Alginic acid Chi: 镧 酗 酗 AP: Awakening St: Stuffed CMCN8: Carboxy A "I sodium withdrawal: algae _ SSS: 雠鼸SCSWHhO 矽 矽 sol dissolution Painting: Fully viscous _ Hidden: Perfluorinated surface 鼸 Comparative example 5 5 wt% isopropyl 1013279245-0 by mixing 1·5 wt% of potassium hydroxide (Κ0Η) 1()111169 (^单单Α0101 13 pages / total 20 pages 201249964 Alcohol (I PA ) and as the remaining part of deionized water to prepare a texture etching solution composition for crystallographic wafers. Comparative Example 6 In addition to replacing the difference with ethylene glycol (EG) In addition to propanol (IPA), the same procedure as described in Comparative Example 5 has been performed. Comparative Example 7 In addition to replacing isopropyl alcohol (IPA) with decyl diglycol (MDG), comparisons have been performed, such as The same procedure as described in Sexual Example 5. Comparative Example 8 The same procedure as described in Comparative Example 5 was carried out except that isopropanol (methane) was replaced with monoethylamine (MEA). Exemplary Samples The texture etching effect of each of the prepared texture etching solution compositions for crystallization of germanium wafers according to the above examples and comparative examples was evaluated by the following procedure. The results are shown in Table 2: The single crystal germanium wafer substrate was immersed in a composition etching solution composition for a single crystal germanium wafer at 8 ° C for 2 〇 minutes. (1) texture uniformity
經由數位相機、3D光學顯微鏡以及掃瞄電子顯微鏡（SEM )來視覺觀察在紋理蝕刻之後獲得的單晶矽晶圓基板表 面上形成的紋理偏差，也就是，均勻性，並根據下述標 準來評估。 〈評估標準〉 ◎-金字塔形成在整個晶圓基板。 〇-金字塔不形成在部分的晶圓基板上（沒有金字 塔的部分少於5%)。 △-金字塔不形成在部分的晶圓基板上（沒有金字 10111169 产單編號 A0101 第14頁/共20頁 1013279245-0 201249964 塔的部分範圍為5至50%)。 X -金字塔不形成在大體上大部分的晶圓基板上（ 沒有金字塔的部分為90%或更多）。 (2) 平均金字塔大小（#m) 使用掃瞄電子顯微鏡（SEM)測量在紋理蝕刻之後獲得的 單晶矽晶圓基板表面上形成的每個微金字塔的大小。這 裡，在測量單位面積上形成的每個微金字塔的大小之後 ，計算所測量大小的平均。 (3) 平均反射率（％) 在具有波長範圍為4 0 0至8 0 0 n m的光射照在紋理蝕刻之 後獲得的單晶矽晶圓基板表面上的例子中，使用UV光譜 儀測量平均反射率。 [表2 ] 項目 紋理均勻性 平均金字塔大小 (m) 平均反射率（％) 範例1 ◎ 3 12.Ϊ1 範例2 ◎ 3 12.49 範例3 ◎ 3 12.59 範例4 ◎ 3 12.32 範例5 ◎ 4 11.86 範例6 ◎ 4 Π.91 範例7 ◎ 4 11.81 範例8 ◎ 3 12.59 範例9 ◎ 3 12.40 範例10 ◎ 4 11.63 範例11 ◎ 4 11.89 mm 12 ◎ 4 11.80 範例13 ◎ 4 11.96 範例14 ◎ 4 11.80 比較性範例1 △ - 26.45 比較性範例2 〇 5 12.98 比較性範例3 SSS未完全溶解 比較性範例4 厶 5 21.32 比較性範例5 〇 5 13.22 比較性範例6 X 10 21.13 比較性範例7 有色的蝕刻溶液 比較性範例8 有色的蝕刻溶液 如表2中所示，在使用根據本發明範例1至14中製備的所 1011116#單编號舰01 第15頁/共20頁 1013279245-0 201249964 任一紋理蝕刻溶液組成物進行紋理蝕刻的例子中，該紋 理蝕刻溶液組成物包括鹼性化合物；多醣；二氧化矽化 合物；以及具有理想含量的作為剩餘部分的水，展示出 "玄紋理蝕刻結晶矽晶圓表面上形成的微金字塔結構均勻 性被改進，因此減少光反射率，隨之改進光吸收功效。 第1圖疋3D光學顯微鏡影像，顯示了在使用範例1 〇中所製 備的紋理蝕刻溶液組成物來紋理蝕刻之後獲得的結晶矽 晶圓表面；以及第2圖是SEM照片，顯示如上述在紋理蝕 刻之後獲得的結晶矽晶圓表面。從這些圖片，可確認微 金子％已被形成在整個晶圓表面，藉由增強紋理的均勻 性’同時減少品質上的偏差β 另一方面，當使用比較性範例丨中所製備不含多醣的紋理 蝕刻溶液組成物時，由於快的蝕刻率，金字塔大小是大 的，且有微小的金字塔；以及發現到的是，在比較性範 例2中不具二氧化矽化合物的產物，展示了呈現其中未形 成金字塔的部分。此外，當使甩比較性範例3中所製備含 有過量多醣的紋理蝕刻溶液組成物時，由於二氧化矽化 合物的不充分溶解’沒有充分地獲得想要的效果 ;以及 當使用比較性範例4中所製備含有過量多醣的紋理蝕刻溶 液組成物時，蝕刻率大大地減少，藉此增加光反射率。 此外，關於比較性範例5中所製備的紋理蝕刻溶液組成物 ’由於該蝕刻溶液組成物中包括的異丙醇（IPA)的低沸 點，在紋理化期間連續導入該組成物造成的溫度梯度已 導致紋理失敗以及增加的成本。相較於範例，比較性範 例6中的紋理蝕刻溶液組成物展現了關於紋理均勻性以及 光反射率的相當惡化的特徵。比較性範例7以及8中的紋 廳116#單編號删1 第16頁/共20頁 1013279245-0 201249964 理蝕刻溶液組成物顯示了隨時間的自我改變，且溫度提 升至紋理處理溫度。 雖然已參照較佳的具體實施例描述了本發明，相關技術 領域的技術人員將了解的是，其中可做出各種修飾以及 變化，而不悖離如附帶申請專利範圍所定義的本發明範 圍。 【圖式簡單說明】 [0007] 從下述詳細的描述結合伴隨的圖式，本發明的上述以及 其他目標、特徵以及其他優勢將更清楚地被了解，其中 第1圖是說明單晶矽晶圓表面的3D光學顯微鏡影像，該單 晶矽晶圓藉由使用本發明範例1 0中所製備用於結晶矽晶 圓的紋理蝕刻溶液組成物而紋理蝕刻；以及 第2圖是說明單晶矽晶圓表面的掃瞄電子顯微鏡（SEM) 照片，該單晶矽晶圓藉由使用本發明範例10中所製備用 於結晶矽晶圓的紋理蝕刻溶液組成物而紋理蝕刻。 【主要元件符號說明】 [0008] 無。 1011116#單編號删1 第17頁/共20頁 1013279245-0The texture deviation, that is, uniformity, formed on the surface of the single crystal germanium wafer substrate obtained after the texture etching was visually observed by a digital camera, a 3D optical microscope, and a scanning electron microscope (SEM), and evaluated according to the following criteria. . <Evaluation Criteria> ◎ - Pyramid is formed on the entire wafer substrate. The 〇-pyramid is not formed on a portion of the wafer substrate (less than 5% of the portion of the pyramid). The Δ-pyramid is not formed on a part of the wafer substrate (there is no gold word 10111169. The order number A0101 page 14/20 pages 1013279245-0 201249964 The part of the tower ranges from 5 to 50%). The X-pyramid is not formed on substantially the majority of the wafer substrate (90% or more without the pyramid). (2) Average pyramid size (#m) The size of each micropyramid formed on the surface of the single crystal germanium wafer substrate obtained after the texture etching was measured using a scanning electron microscope (SEM). Here, after measuring the size of each micro-pyramid formed on a unit area, the average of the measured sizes is calculated. (3) Average reflectance (%) In the example of the surface of a single crystal germanium wafer obtained by photolithography having a wavelength range of 400 to 800 nm, the average reflection is measured using a UV spectrometer. rate. [Table 2] Item texture uniformity Average pyramid size (m) Average reflectance (%) Example 1 ◎ 3 12.Ϊ1 Example 2 ◎ 3 12.49 Example 3 ◎ 3 12.59 Example 4 ◎ 3 12.32 Example 5 ◎ 4 11.86 Example 6 ◎ 4 Π.91 Example 7 ◎ 4 11.81 Example 8 ◎ 3 12.59 Example 9 ◎ 3 12.40 Example 10 ◎ 4 11.63 Example 11 ◎ 4 11.89 mm 12 ◎ 4 11.80 Example 13 ◎ 4 11.96 Example 14 ◎ 4 11.80 Comparative Example 1 △ - 26.45 Comparative Example 2 〇5 12.98 Comparative Example 3 SSS is not completely dissolved Comparative Example 4 厶5 21.32 Comparative Example 5 〇5 13.22 Comparative Example 6 X 10 21.13 Comparative Example 7 Colored etching solution Comparative Example 8 Colored The etching solution is as shown in Table 2, and is textured using any of the 1011116# single number ship 01 page 15 / 20 pages 1013279245-0 201249964 prepared according to the present invention examples 1 to 14. In the etched example, the texture etching solution composition includes a basic compound; a polysaccharide; a cerium oxide compound; and a water having a desired content as a remainder, exhibiting &qu Ot; The texture of the micro-pyramid formed on the surface of the wafer is improved, thus reducing the light reflectivity and improving the light absorption efficiency. Fig. 1 is a 3D optical microscope image showing the surface of a crystalline germanium wafer obtained after texture etching using the texture etching solution composition prepared in Example 1; and Fig. 2 is an SEM photograph showing the texture as described above. The surface of the crystalline germanium wafer obtained after etching. From these pictures, it can be confirmed that the micro-gold % has been formed on the entire wafer surface by enhancing the uniformity of the texture 'while reducing the variation in quality β on the other hand, when using the comparative example, the polysaccharide-free preparation is prepared. When the composition of the etching solution is textured, the pyramid size is large due to the fast etching rate, and there is a small pyramid; and it is found that the product without the cerium oxide compound in Comparative Example 2 exhibits the presence of Form the part of the pyramid. Further, when the texture etching solution composition containing the excess polysaccharide prepared in Comparative Example 3 was made, the desired effect was not sufficiently obtained due to insufficient dissolution of the cerium oxide compound; and when Comparative Example 4 was used When a texture etching solution composition containing an excessive amount of polysaccharide is prepared, the etching rate is greatly reduced, thereby increasing the light reflectance. Further, regarding the texture etching solution composition prepared in Comparative Example 5, due to the low boiling point of the isopropanol (IPA) included in the etching solution composition, the temperature gradient caused by the continuous introduction of the composition during texturing has been Causes texture failure and increased cost. The texture etching solution composition in Comparative Example 6 exhibits a rather deteriorated characteristic with respect to texture uniformity and light reflectance compared to the example. Comparable Examples 7 and 8 Grain Hall 116# Single Number Delete 1 Page 16/Total 20 Page 1013279245-0 201249964 The etching solution composition shows self-change over time and the temperature is raised to the texture processing temperature. While the invention has been described with respect to the preferred embodiments embodiments illustrated in the embodiments of the embodiments of the present invention, it will be understood that various modifications and changes can be made without departing from the scope of the invention as defined by the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS [0007] The above and other objects, features and other advantages of the present invention will become more <RTIgt a 3D optical microscope image of a circular surface, the single crystal germanium wafer is texture etched by using a texture etching solution composition for crystallization of a germanium wafer prepared in Example 10 of the present invention; and FIG. 2 is a diagram illustrating a single crystal germanium A scanning electron microscope (SEM) photograph of the surface of the wafer, the single crystal germanium wafer being textured etched by using the texture etching solution composition for crystallization of the germanium wafer prepared in Example 10 of the present invention. [Main component symbol description] [0008] None. 1011116#单编号 删除1 Page 17 of 20 1013279245-0