TW201249953A - Adhesive tape - Google Patents

Adhesive tape Download PDF

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Publication number
TW201249953A
TW201249953A TW101108951A TW101108951A TW201249953A TW 201249953 A TW201249953 A TW 201249953A TW 101108951 A TW101108951 A TW 101108951A TW 101108951 A TW101108951 A TW 101108951A TW 201249953 A TW201249953 A TW 201249953A
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TW
Taiwan
Prior art keywords
adhesive tape
adhesive
adhesive layer
copolymer
layer
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TW101108951A
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Chinese (zh)
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TWI521039B (en
Inventor
Takatoshi Sasaki
Takashi Habu
Shinsuke Ikishima
Katsutoshi Kamei
Fumiteru Asai
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Nitto Denko Corp
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Publication of TW201249953A publication Critical patent/TW201249953A/en
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Publication of TWI521039B publication Critical patent/TWI521039B/en

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J123/00Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers
    • C09J123/02Adhesives based on homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Adhesives based on derivatives of such polymers not modified by chemical after-treatment
    • C09J123/10Homopolymers or copolymers of propene
    • C09J123/14Copolymers of propene
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/20Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22Plastics; Metallised plastics
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00Adhesives in the form of films or foils
    • C09J7/30Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38Pressure-sensitive adhesives [PSA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2423/00Presence of polyolefin
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/6834Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

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  • Organic Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Adhesive Tapes (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)

Abstract

Provided is an adhesive tape which has unevenness followability capable of sufficiently filling unevenness of an adherend and can hold a state in which unevenness is sufficiently filled over time. The adhesive tape includes an adhesive agent layer and a substrate layer, and the adhesive agent layer has a storage elasticity modulus at 20 DEG C of 0.5 106 Pa to 1.0 108 Pa and a loss tangent tan d at 20 DEG C to 80 DEG C of 0.1 or more. In a preferred embodiment, the adhesive agent layer contains an amorphous propylene-(1-butene) copolymer obtained by polymerization using a metallocene catalyst, and the propylene-(1-butene) copolymer has a weight average molecular weight (Mw) of 200,000 or more and a molecular weight distribution (Mw/Mn) of 2 or less.

Description

201249953 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種黏著帶。 【先前技術】 • 包含矽、鎵、砷等之半導體晶圓被製成大直徑之狀態, 於其表面形成圖案之後,磨削背面,通常將晶圓之厚度縮 « 減至100〜600 μιη左右,進而切斷分離(切割)為元件小片, 進而轉移至安裝步驟》 於磨削半導體晶圓之背面之步驟(背面磨削步驟)中,為 了保護半導體晶圓之表面(圖案面)而使用黏著帶。該黏著 帶通常於背面磨削步驟後剝離。用於此種目的之黏著帶必 須具有於背面磨削步驟中不會剝離程度之黏著力,另一方 面,要求具有於背面磨削步驟後可容易地剝離且不使半導 體晶圓破損之程度之較小黏著力。先前,作為此種黏著 帶,使用於基材上塗佈有黏著劑之黏著帶,例如揭示有於 含有聚乙稀系樹脂之基材上設置有塗佈有丙稀酸系黏著劑 之黏著劑層的黏著帶(專利文獻丨)。 但是’此種先前之黏#帶無&《分填埋半導體晶圓之圖 - ㈣之凹凸,或即使剛貼合後填埋了凹凸,黏著帶亦隨著 . _間經過而隆起’且於供於背面磨削步驟時依然無法充分 填埋圖案面之凹凸。如此於無法充分填埋半導體晶圓之圖 案面之情形時,磨削時半導體晶圓之壓力變得不均勻,圖 案面之凹凸對半導體晶圓之背面產生影響,而產生無法平 滑地磨削之問題,或產生半導體晶圓上產生裂紋之問題。 163077.doc 201249953 之半導體晶圓較多於貼合 削步驟,於如上所述隨著 ’亦產生同樣之問題。 於實際之步驟中,貼合有黏著帶 後經過特定時間之後供於背面磨 時間經過而黏著帶隆起之情形時 先前技術文獻 專利文獻 [專利文獻1]國際公開WO2007/U6856號公報 【發明内容】 發明所欲解決之問題 本發明係為解決上述先前之問題而成者。其目的在於提 供一種黏著帶,其具有可充分填埋被黏著體之凹凸之階差 追隨性,且可隨時間經過而維持充分填埋凹凸之狀態。 解決問題之技術手段 本發明之黏著帶具備黏著劑層與基材層,該黏著劑層於 20 C下之儲存彈性模數為〇 5xl〇6 Pa〜i 〇xl〇8 Pa ,該黏著 劑層於2(TC~8(rc下之損耗正切tanS為以上。 於較佳實施形態中,上述黏著劑層包含使用二茂金屬觸 媒聚合而獲得之非晶質丙烯_(1_丁烯)共聚物,該丙烯 丁烯)共聚物之重量平均分子量(Mw)為200,000以上,該丙 烯-(1· 丁烯)共聚物之分子量分佈(Mw/Mn)為2以下。 於較佳實施形態中,針對矽製半導體鏡面晶圓之鏡面的 JIS-Z-0237所規定之180。剝離黏著力為〇.2 n/20 mm〜3.0 N/20 mm。 於較佳實施形態中’本發明之黏著帶係將黏著劑層形成 材料與基材層形成材料共擠壓成形而獲得。 I63077.doc -4 · 201249953 發明之效果 根據本發明,可提供一種黏著帶,其藉由具備具有特定 之儲存彈性模數及損耗正切tan5之黏著劑層,而具有可充 刀填埋被黏著體之凹凸之階差追隨性,且可隨時間經過而 維持充分填埋凹凸之狀態。 【實施方式】 Α·黏著帶之全體構成 圆1係本發明之較佳實施形態之黏著帶之概略剖面圖。 黏著帶100具備黏著劑層10與基材層20。 黏著帶100之厚度較佳為25 μηι〜500 μηι,進而較佳為6〇 μηι〜300 μιη,尤佳為 13〇 μηι〜265 μηι。 黏著劑層10之厚度較佳為20 μηι〜100 μηι,進而較佳為3〇 μιη〜65 μηι ° 基材層20之厚度較佳為5 μηι〜4〇〇 ,進而較佳為1〇 μηι〜300 μπι,尤佳為 3〇 μηι〜2〇〇 μιη。 本發明之黏著帶可進而具備任意之適當之其他層。作為 其他層例如可列舉基材層之與黏著劑相反側所具備之可 對黏著帶賦予耐熱性的表面層。 本發明之黏著帶可以利用間隔層進行保護之形式提供。 本發明之黏著帶於利用間隔層進行保護之狀態下,可捲取 為親狀隔層具有作為保護黏著帶直至供於實用的保護 材料之功能。作為間隔層,例如可列舉:利用矽系剝離 劑氟系剝離劑、藉由長鍵丙烯酸院基醋系剝離劑等剝離 劑進行表面塗佈之塑料膜(例如聚對苯二甲酸乙二酯 163077.doc 201249953 (PET)、聚乙稀、聚丙稀)、由非極性材料(例如聚乙稀、聚 丙烯)所形成之膜、不織布或紙等。 本發明之黏著帶例如於未利用間隔層進行保護之情形 時,亦可於與黏著劑層相反側之最外層進行背面處理。背 面處理例如可使用矽系剝離劑或丙烯酸長鏈烷基酯系剝離 劑等剝離劑而進行。本發明之黏著帶藉由進行背面處理’ 可捲取為輥狀。 本發明之黏著帶對矽製半導體鏡面晶圓之鏡面的JIS_z_ 0237所規定之180。剝離黏著力較佳為〇 2 N/2〇 mm〜3 〇 N/20mm,進而較佳為〇.4N/2〇mm〜2.5N/2〇mm,尤佳為 〇·4 N/20 mm〜2.0 N/20 mm。只要為此種範圍,則可同時具 備黏著性與剝離性,例如可獲得於半導體晶圓之背面磨削 步驟之磨削加工中不剝離,且於磨削加工後可容易地剝離 之黏著帶。再者’於本說明書中’上述黏著力係指製造黏 著帶之後,於以贼熟化2天之後,藉由依據Jisz彻之 方法(貼合條件:2 kg報往返1次、剝離速度:300 mm/ min、剝離角度ι8〇〇)所測得之黏著力。 於本說明書中,黏著帶之階差追隨性之指標係使用「隆 起寬度」所„月隆起寬度」’如圖2所示,係指將黏著帶 100貼合於具有階差x之被點著體20〇上時,該黏著帶隆起 而未與被”體雇相接之部分之寬度3。所謂該隆起寬度 :小,係指點著帶階差追隨性優異,可良好地填 體之凹凸。 將本發明之黏著帶貼合於石夕製半導體鏡面晶圓上時,剛 I63077.doc 201249953 貼合後之本發明之黏著帶對階差3G㈣之被黏著體的隆起 寬度較佳為420㈣以下,進而較佳為5㈣〜則叫,尤佳 為1〇阶220㈣。本發明之黏著帶之隆μ度較小 被黏著體之凹凸(例如半導體晶圓之圖案)追隨性良好,可 良好地填埋該C5 &。於將此種黏冑帶用於半導體晶圓加工 時之圖案面保護之情形時’於背面磨削步驟時,料導體 晶圓均句地施加屋力,圖案面之凹凸不會對半導體晶圓之 貪面產生影響’可平滑地磨削。χ,可防止半導體晶圓之 裂紋。進而,可防止磨削水浸入至半導體晶圓與黏著帶之 間。 σ201249953 VI. Description of the Invention: [Technical Field to Which the Invention Is Ascribed] The present invention relates to an adhesive tape. [Prior Art] • A semiconductor wafer containing germanium, gallium, arsenic, etc. is made into a large diameter state, and after the surface is patterned, the back surface is ground, and the thickness of the wafer is usually reduced to about 100 to 600 μm. Further, the separation (cutting) is performed as a small piece of the component, and then transferred to the mounting step of the step of grinding the back surface of the semiconductor wafer (back grinding step), and the adhesion is used to protect the surface (pattern surface) of the semiconductor wafer. band. The adhesive tape is usually peeled off after the back grinding step. The adhesive tape used for such a purpose must have an adhesive force which does not peel off in the back grinding step, and on the other hand, it is required to be easily peeled off after the back grinding step and the semiconductor wafer is not damaged. Less adhesion. Conventionally, as such an adhesive tape, an adhesive tape coated with an adhesive on a substrate is used, for example, an adhesive coated with an acrylic adhesive is provided on a substrate containing a polyethylene resin. Adhesive tape of the layer (Patent Document 丨). But 'this kind of previous sticky #带带& "filling the semiconductor wafer map - (d) the bump, or even if the bump is buried after the bump, the adhesive tape is bulging with the passage of _ and When the back grinding step is applied, the unevenness of the pattern surface cannot be sufficiently filled. When the pattern surface of the semiconductor wafer cannot be sufficiently filled, the pressure of the semiconductor wafer during grinding becomes uneven, and the unevenness of the pattern surface affects the back surface of the semiconductor wafer, resulting in inability to smoothly grind. The problem, or the problem of cracking on the semiconductor wafer. The semiconductor wafer of 163077.doc 201249953 is more than the lamination step, and the same problem occurs as described above. In the case of the actual step, when the adhesive tape is bonded to the adhesive tape, the adhesive tape is embossed for a certain period of time, and the adhesive tape is embossed. [Patent Document 1] International Publication WO2007/U6856 [Abstract] PROBLEM TO BE SOLVED BY THE INVENTION The present invention has been made to solve the above problems. It is an object of the invention to provide an adhesive tape which has a step-following property which can sufficiently fill the unevenness of the adherend, and which can maintain a state in which the unevenness is sufficiently filled over time. Solution to Problem The adhesive tape of the present invention has an adhesive layer and a substrate layer, and the storage elastic modulus of the adhesive layer at 20 C is 〇5xl〇6 Pa~i 〇xl〇8 Pa, the adhesive layer In 2 (TC~8 (the loss tangent tanS under rc is above. In a preferred embodiment, the above adhesive layer comprises amorphous propylene_(1-butene) copolymer obtained by polymerization using a metallocene catalyst) The weight average molecular weight (Mw) of the propylene-butene copolymer is 200,000 or more, and the molecular weight distribution (Mw/Mn) of the propylene-(1·butene) copolymer is 2 or less. In a preferred embodiment, The 180 for the mirror surface of the semiconductor mirror wafer is specified in JIS-Z-0237. The peel adhesion is 22 n/20 mm to 3.0 N/20 mm. In the preferred embodiment, the adhesive tape of the present invention According to the present invention, an adhesive tape can be provided which has a specific storage elastic modulus by co-extruding the adhesive layer forming material with the base material forming material. I63077.doc -4 · 201249953 Number and loss tangent tan5 adhesive layer, and can be filled with paste The step of the unevenness of the body is maintained, and the state in which the unevenness is sufficiently filled can be maintained over time. [Embodiment] The entire structure of the adhesive tape is a circle 1 and the outline of the adhesive tape of the preferred embodiment of the present invention is obtained. The adhesive tape 100 is provided with an adhesive layer 10 and a substrate layer 20. The thickness of the adhesive tape 100 is preferably 25 μηη to 500 μηι, more preferably 6 μηηι to 300 μιη, and particularly preferably 13〇μηι~265 The thickness of the adhesive layer 10 is preferably from 20 μm to 100 μm, and further preferably from 3 μm to 65 μm. The thickness of the substrate layer 20 is preferably 5 μm to 4 μm, and more preferably 1 μm. Further, the adhesive tape of the present invention may further comprise any other suitable layer. The other layer may, for example, be provided on the opposite side of the substrate layer from the adhesive. A surface layer capable of imparting heat resistance to the adhesive tape. The adhesive tape of the present invention can be provided in the form of a protective layer by a spacer layer. The adhesive tape of the present invention can be wound into a hydrophilic barrier layer in a state of being protected by a spacer layer. Make The protective tape is protected until it is provided as a practical protective material. Examples of the spacer layer include surface coating by a release agent such as a bismuth-based release agent fluorine-based release agent or a long-chain acrylic-based vinegar-based release agent. Plastic film (such as polyethylene terephthalate 163077.doc 201249953 (PET), polyethylene, polypropylene), film formed from non-polar materials (such as polyethylene, polypropylene), non-woven fabric or paper, etc. The adhesive tape of the present invention may be subjected to back treatment on the outermost side opposite to the adhesive layer, for example, when it is not protected by the spacer layer. The back treatment can be carried out, for example, by using a release agent such as a ruthenium release agent or a long-chain alkyl acrylate release agent. The adhesive tape of the present invention can be wound into a roll shape by performing a backside treatment. The adhesive tape of the present invention is 180 as defined by JIS_z_0237 of the mirror surface of the semiconductor mirror wafer. The peeling adhesive force is preferably 〇2 N/2〇mm~3 〇N/20mm, and further preferably 〇.4N/2〇mm~2.5N/2〇mm, and particularly preferably 〇·4 N/20 mm~ 2.0 N/20 mm. In the case of such a range, adhesiveness and releasability can be simultaneously provided, for example, an adhesive tape which can be easily peeled off after the grinding process without being peeled off during the grinding process of the back grinding step of the semiconductor wafer. In addition, in the present specification, the above-mentioned adhesive force refers to the method of manufacturing the adhesive tape after the thief is matured for 2 days, by the method according to Jisz (the fitting condition: 2 kg round trip, peeling speed: 300 mm) / min, peel angle ι8 〇〇) The measured adhesion. In the present specification, the index of the step followability of the adhesive tape is "the width of the ridge of the ridge" as shown in FIG. 2, which means that the adhesive tape 100 is attached to the step x with the step difference When the body 20 is smashed, the adhesive tape is swelled and has a width of 3 which is in contact with the body. The width of the ridge is small, and it is excellent in the followability of the step, and the unevenness of the filler can be satisfactorily filled. When the adhesive tape of the present invention is attached to a Shihwa semiconductor mirror wafer, the adhesion width of the adhesive tape of the present invention to the step 3G (four) after the bonding of I63077.doc 201249953 is preferably 420 (four) or less. Further preferably, it is preferably 5 (four) ~ then called, and particularly preferably 1 〇 220 (4). The adhesive tape of the present invention has a small ridge degree, and the bump of the adhesive body (for example, a pattern of a semiconductor wafer) has good followability and can be well landfilled. The C5 & when the adhesive tape is used for the pattern surface protection in the semiconductor wafer processing, when the back grinding step is performed, the material conductor wafer uniformly applies the house force, and the unevenness of the pattern surface is not Will have an impact on the greedy surface of semiconductor wafers' smoothing Ground grinding, which prevents cracking of the semiconductor wafer. Further, it prevents the grinding water from immersing between the semiconductor wafer and the adhesive tape.

將本發明之黏著帶貼合於矽製半導體鏡面晶圓上時,貼 後丨小時之對階差30 μιη之隆起寬度的增加量較佳為1〇% 以内,進而較佳為5〇/。以内。只要為此種範圍,則將黏著 帶貼合於半導體晶圓上之後,經過特定時間之後,即便將 半導體晶圓供於背面磨削步驟之情形時,亦可維持良好地 填埋半導體晶圓之圖案面之凹凸的狀態,如上所述可平滑 地磨削背面,又,可防止半導體晶圓之裂紋。上述黏著帶 尤佳為於貼合後經過1小時後,隆起寬度不增加。 將本發明之黏著帶貼合於矽製半導體鏡面晶圓上時,貼 合並經過1小時後本發明之黏著帶對階差3 〇 μ m之被黏著體 的隆起寬度較佳為470 μηι以下’進而較佳為1〇 μιη〜35〇 μιη ’ 尤佳為 2〇 μηι〜300 μηι,最佳為 30 μηι〜250 μηι。 Β·黏著劑層 上述黏著劑層於20t下之儲存彈性模數(Gi)為〇5χ1〇6 163077.doc 201249953When the adhesive tape of the present invention is attached to a tantalum semiconductor mirror wafer, the amount of increase in the width of the ridge width of 30 μm is preferably within 1% by weight, and more preferably 5 Å/min. Within. As long as it is in this range, after the adhesive tape is attached to the semiconductor wafer, after a certain period of time, even if the semiconductor wafer is supplied to the back grinding step, the semiconductor wafer can be well filled. The state of the unevenness of the pattern surface can smoothly grind the back surface as described above, and the crack of the semiconductor wafer can be prevented. It is particularly preferable that the above-mentioned adhesive tape does not increase in the width of the ridge after one hour after the bonding. When the adhesive tape of the present invention is attached to a tantalum semiconductor mirror wafer, the adhesion width of the adhesive tape of the present invention to the step of 3 〇μm is preferably 470 μηι or less after one hour of bonding. Further preferably, 1 〇 μιη to 35 〇 μιη ' is preferably 2 〇 μηι to 300 μηι, and most preferably 30 μηι to 250 μηι. Β·Adhesive layer The storage elastic modulus (Gi) of the above adhesive layer at 20t is 〇5χ1〇6 163077.doc 201249953

Pa〜UMO8 Pa’較佳為〇_8xl〇6 Pa〜3.0M07 Pae只要上述 黏著劑層之儲存彈性模數(G,)為此種範圍,則可獲得階差 追隨性優異之黏著帶。更具體而言,如上所述可獲得隆起 寬度較小之黏著帶。若將此種黏著帶用於半導體晶圆之加 工之背面磨削步驟,則如上所述可平滑地磨削背面,又’ 可防止半導體晶圓之裂紋。又,只要上述黏著劑層之儲存 彈性模數(G·)為上述範圍,則可獲得可同時具備對表面具 有凹凸之被黏著體之充分之黏著力與適度之剝離性的黏著 帶。再者,本發明之儲存彈性模數(G,)可藉由動態黏彈 性譜測定測定。 上述黏著劑層於2(TC〜8(TC下之損耗正切tanS為〇」以 上’較佳為0.2以上’進而較佳為〇.2〜1。黏著劑層於2〇。〇 下之損耗正切tanS較佳為0.1〜0.5 ’進而較佳為〇」〜〇 25。 黏著劑層於80eC下之損耗正切taM較佳為〇.2〜h〇,進而較 佳為0.45〜1,尤佳為〇.5〜1。 如此’於高溫區域具有較高之損耗正切tanS之黏著劑 層’於高溫區域黏著力較高’且難以變形。此處,於高溫 區域之黏著劑層之難變形性可基於時間-溫度換算法則之 理論,轉換為於室溫下隨著時間經過而產生之黏著劑層之 緩慢變形而進行研究。即,認為如上所述於高溫區域具有 較向之損耗正切tan5的黏著劑層,於室溫下之緩慢變形(具 體而言’隆起寬度隨著時間經過而增加之現象)獲得抑 制。因此,只要上述黏著劑層之損耗正切tanS為如上所述 之範圍’則可獲得於貼合後經過特定時間後,亦可維持隆 I63077.doc 201249953 起寬度較小、~良好地填埋被黏著體之凹凸之狀態的黏著 帶0 作為構成上述黏著劑層之材料,只要獲得上述所需之特 ㈣可私用任意之適畲之材料。具代表性的是黏著劑層包 含聚烯烴系樹脂。 上述黏者劑層較佳為包含非晶質丙稀_(1_丁稀)共聚物。 :要,此㈣著劑層’則藉由與基材層之共擠壓成形可製 =黏著帶以較)之步驟數且不使用有機溶劑便可獲得黏 者帶。再者’於本說明書中,所謂「非晶質」係指不像結 晶質般具有明確之熔點的性質。 上述非晶質丙稀仆丁稀)共聚物可藉由使用二茂金屬觸 媒將聚合丙稀與丁烯聚合而獲得。更詳細而言,非晶質 丙晞-(1_丁烯)共聚物例如可藉由如下方式獲得:使用二茂 =屬觸媒進行使丙烯與h稀聚合之聚合步驟,於該聚合 +驟後,進㈣媒殘餘除去步驟、異物除去步驟等後處理 步驟》非晶質丙稀仆丁稀)共聚物經由此種步驟,例如以 =等形Μ得。作為二茂金屬觸媒,例如可列 二―戊金屬化合物與銘氧院之二茂金屬均勻混合觸 二於微粒子狀之載體上承載有二茂金屬化合物 屬承載型觸媒等。 戊金 〇 茂金屬觸媒聚合而獲得之非晶質丙稀 二聚物顯示出狹窄之分子量分佈。上述非晶質丙 進而二 物之分子量分佈(Mw/Mn)較佳為2以下, 為Η〜2 ’尤佳為m 9。由於分子量分佈狹窄 I63077.doc 201249953 ^非晶質丙㈣-丁烯)共聚物之低分子量成分較少,因此 只要使用此種非晶質丙烯仆丁烯)共聚物,則可獲得可防 止由低分子量成分之溢出引起之對被黏著體之污染的黏著 帶。此種黏著帶例如可適宜地用於半導體晶圓加工用途。 於上述非晶質丙烯-(1-丁烯)共聚物中,源自丙烯之構成 =之含有比率較佳為嶋耳%〜99莫耳%,進而較佳為^ 莫耳%〜99莫耳%,尤佳為9〇莫耳%〜%莫耳%。 於上述非晶質丙烯-(1-丁稀)共聚物中’源自i•丁缔之構 成單元之含有比率較佳為!莫耳%〜15莫耳%,進而較佳為i 莫耳。/。〜1G莫耳。/”只要為此種範圍,則可獲得知性與柔軟 性之平衡性優異,且上述隆起寬度較小之黏著帶。 上述非晶質丙烯·(1-丁稀)共聚物可為嵌段共聚物,亦可 為無規共聚物。 上述非晶質丙浠-(1· 丁烯)共聚物之重量平均分子量(Mw) 較佳為200,000以上,進而較佳為2〇〇 〇〇〇〜5〇〇,_,尤佳 ,0,000〜300,_。只要非晶質丙烯(1•丁烯)共聚物之重 莖平均分子量(Mw)為此種範圍’則可獲得與普通之苯乙烯 系熱塑性樹脂、丙烯酸系熱塑性樹脂(—為1〇〇,_以下) 相比低刀+量成分較少且可防止被黏著體之污染之黏著 帶。又’共擠麼成形時,可於無加工不良之情況下形成黏 著劑層,且可獲得適當之黏著力。 非晶質丙婦-(1-丁烯)共聚物於23〇。〇、2 16咖下之熔融 流動速率較佳為1 g/10 min〜5〇 g/1〇 min,進而較佳為5 g/l〇 min〜30 g/10 min,尤佳為 5 g/1〇 min〜2〇 g/i〇 min。只 163077.doc 201249953 要非晶質丙缚·( 1、丁、法、 m , '締共聚物之熔融流動速率為此稀銘 圍,則藉由共擠壓成形可 疋手為此種範 均勻之黏著刺層。稼 :口工不良之情況下形成厚度 法而測定。 "動速率可藉由依據JISK7210之方 之ι=Τ稀·(1,聚物於不損害本發明之效果 之範圍内,亦可進而包含源自其 =月之效果 其他單體,例如可列舉:乙稀、:構成單。作為 稀、1-癸烯、4-甲基i六成 >、1-己烯、I-辛 較佳為… 甲基戊稀等㈣烴。 較佳為上4黏者劑層實質上 NO;·、scv·、Li+、Na+ r 3 CI、Br、Ν〇2·、Pa~UMO8 Pa' is preferably 〇8xl〇6 Pa~3.0M07 Pae as long as the storage elastic modulus (G,) of the above adhesive layer is in such a range, an adhesive tape excellent in step followability can be obtained. More specifically, as described above, an adhesive tape having a small ridge width can be obtained. If such an adhesive tape is used for the back grinding step of the semiconductor wafer processing, the back surface can be smoothly ground as described above, and the crack of the semiconductor wafer can be prevented. Further, as long as the storage elastic modulus (G·) of the pressure-sensitive adhesive layer is in the above range, an adhesive tape which can simultaneously have sufficient adhesion to the adherend having irregularities on the surface and moderate peeling property can be obtained. Further, the storage elastic modulus (G,) of the present invention can be measured by dynamic viscoelasticity measurement. The adhesive layer is 2 (TC~8 (the loss tangent tanS at TC is 〇 or more), preferably 0.2 or more, and further preferably 〇.2 to 1. The adhesive layer is at 2 〇. The tanS is preferably 0.1 to 0.5' and further preferably 〇" to 〇 25. The loss tangent taM of the adhesive layer at 80eC is preferably 〇.2~h〇, more preferably 0.45~1, and particularly preferably 〇. .5~1. Thus, the adhesive layer having a high loss tangent tanS in a high temperature region has a high adhesion in a high temperature region and is difficult to deform. Here, the difficulty of deforming the adhesive layer in a high temperature region can be based on The theory of the time-temperature conversion algorithm is converted into a slow deformation of the adhesive layer generated at room temperature over time. That is, it is considered that the adhesive having a more tangent tan tan5 in the high temperature region as described above is considered. The layer is slowly deformed at room temperature (specifically, the phenomenon that the width of the ridge increases with time) is suppressed. Therefore, as long as the loss tangent tanS of the above adhesive layer is in the range described above, After a certain period of time after fitting, Holder I63077.doc 201249953 The adhesive tape 0 having a small width and a good landfill in the state of the unevenness of the adherend is used as the material constituting the above adhesive layer, as long as the above-mentioned special (4) can be obtained. The material of the crucible is typically a polyolefin-based resin. The adhesive layer preferably comprises an amorphous propylene (1-butylene) copolymer. 'There is a number of steps which can be made by co-extrusion with the substrate layer, and the adhesive tape can be obtained without using an organic solvent. In addition, in this specification, the term "amorphous" is used. It means a property which does not have a clear melting point like crystalline. The above amorphous propylene succinimide copolymer can be obtained by polymerizing propylene and butene using a metallocene catalyst. In more detail, the amorphous propylene-(1-butene) copolymer can be obtained, for example, by a polymerization step of polymerizing propylene and h using a dioxin=catalyst, in which the polymerization is repeated. Thereafter, the post-processing step "amorphous propylene disulfide" copolymer such as the (four) medium residual removal step and the foreign matter removal step is obtained by such a step, for example, in the form of =. As the metallocene catalyst, for example, a di-pentametal compound and a dimetallocene metal of the oxy-enriched metal can be uniformly mixed with a metallocene-supporting catalyst. The amorphous propylene dimer obtained by polymerization of the ruthenium metallocene catalyst exhibits a narrow molecular weight distribution. The molecular weight distribution (Mw/Mn) of the amorphous propylene and the second is preferably 2 or less, and is preferably Η2 to 2'. Since the molecular weight distribution is narrow, I63077.doc 201249953 ^amorphous propane (tetra)-butene) copolymer has a low molecular weight component, so that if such an amorphous propylene pentene copolymer is used, it can be prevented from being low. An adhesive tape caused by the overflow of the molecular weight component to the contaminated body. Such an adhesive tape can be suitably used, for example, for semiconductor wafer processing purposes. In the above amorphous propylene-(1-butene) copolymer, the content ratio of the composition derived from propylene is preferably from 9% to 99% by mole, and more preferably from 0% to 99% by mole. %, especially good for 9 〇 耳 %%%%%. The content ratio of the constituent unit derived from i•butylene in the above amorphous propylene-(1-butylene) copolymer is preferably from ? mol% to 15 mol%, and further preferably i mol. /. ~1G Mo. In the case of such a range, an adhesive tape having excellent balance between the properties and the flexibility and having a small width of the above-mentioned ridges can be obtained. The amorphous propylene (1-butylene) copolymer can be a block copolymer. Further, the random copolymer may be a weight average molecular weight (Mw) of the amorphous propylene-(1.butene) copolymer of preferably 200,000 or more, and more preferably 2 〇〇〇〇〇 to 5 〇. 〇, _, 尤佳, 0,000~300, _. As long as the average molecular weight (Mw) of the amorphous propylene (1·butene) copolymer is in this range, the styrene-based thermoplastic resin can be obtained. Acrylic thermoplastic resin (—1 〇〇, _ or less) is an adhesive tape that is less than a low knives + component and can prevent contamination by the adherend. In the case where an adhesive layer is formed and an appropriate adhesive force is obtained. The amorphous propylene-(1-butene) copolymer is at 23 Å. The melt flow rate under 〇, 2 16 coffee is preferably 1 g/10. Min~5〇g/1〇min, further preferably 5 g/l〇min~30 g/10 min, particularly preferably 5 g/1〇min~2〇g/i〇min. 163077.doc 201249953 To be amorphous, (1, butyl, meth, m, 'the melt flow rate of the copolymer) is a rare one, and it can be used for this kind of uniform by co-extrusion. Adhesive layer: The measurement is carried out by forming a thickness method in the case of poor workmanship. "The rate of motion can be determined by the basis of JISK7210, ie, the polymer does not impair the effect of the present invention. Further, other monomers derived from the effect of the month may be further included, and examples thereof include ethylene: a constituent unit, and dilute, 1-decene, 4-methyl i hexamethylene, and 1-hexene. I-octyl is preferably a (tetra) hydrocarbon such as methyl pentene. Preferably, the upper 4 adhesive layer is substantially NO; ·, scv·, Li+, Na+ r 3 CI, Br, Ν〇2·,

Li、Na、κ、Μ 2+ 2+ 在於:可防止該離子污染被黏/體 NH4。其原因 例如在用於半導體晶圓加工用途之情形時,不會使 電路發生斷線或短路。不包含上述離子之黏 如上所述使用二茂金屬觸媒, 歹,可 黏考劑層所包含之非晶 質丙烯-(1-丁烯)共聚物溶液聚合 σ阳獲侍。於使用該二茂金 屬觸媒之浴液聚合中,非晶質 ㈣人.々 只㈣d-丁婦)共聚物可使用 ^聚〇〉谷劑不同之不良溶劑 土、 削夂覆進仃析出單離(再沈澱 法)’而進行純化’因此可獲得 不包含上述離子之黏著劑 層。再者’於本說明書中,所謂「實質上不包含η Br、NCV、Ν〇3·、s〇42-、u+、他+、κ+、心、μ、 Λ’係指標準之離子層析分析(例如使用公司製 商品名「DX-32〇」、「DX_5G。」之離子層析分析)中未 達檢測極限。*體而言,係指相對於點著劑層i g,F ·、C i · 、ΒΓ·、Ν〇2-、Ν〇3·、δ〇4^κ、^〇49_τ ι^ I63077.doc • 11 201249953Li, Na, κ, Μ 2+ 2+ lie in: it prevents the ionic contamination of the viscous/body NH4. The reason for this is that, for the case of semiconductor wafer processing applications, the circuit is not broken or short-circuited. The adhesive which does not contain the above-mentioned ions is polymerized as described above using a metallocene catalyst, and the amorphous propylene-(1-butene) copolymer contained in the adhesive layer is polymerized. In the bath polymerization using the metallocene catalyst, the amorphous (four) human. 々 only (d) d-butan) copolymer can be used in different types of poor solvent soil, cut into the sputum The purification is carried out by the (reprecipitation method)', so that an adhesive layer not containing the above ions can be obtained. Furthermore, in the present specification, the phrase "substantially does not include η Br, NCV, Ν〇3·, s〇42-, u+, he+, κ+, heart, μ, Λ" means standard ion chromatography. The detection limit (for example, ion chromatographic analysis using the company name "DX-32" and "DX_5G") is not reached. * Body means relative to the dot layer ig, F ·, C i · , ΒΓ·, Ν〇2-, Ν〇3·, δ〇4^κ, ^〇49_τ ι^ I63077.doc • 11 201249953

Na分別為0.20 μ§以下,M 2+ NH/為。、以下之情形/及。刀別為。〜下, 為了調整黏著劑層之黏著力(結果為上 =了存彈性模數,上述黏著劑層亦可包含結晶: =樹脂。藉由含有結晶性聚丙稀系樹脂,可降低上 之4^增加上述料彈性模數。結晶性聚丙稀系樹脂 ^有比率可根據所需之黏著力及儲存彈性模數而設定任 與之比率°相對於上述非晶質丙埽仆丁稀)共聚物 L —性聚丙烯系樹脂之合計重量’結晶性聚丙稀系樹 月曰之3有比率較佳為〇重量%〜45重量%,進而較佳為〇重量 /〇〜4〇重量%,尤佳為〇重量%〜20重量〇/。。 上述結晶性聚丙烯系樹脂可為均聚丙烯,亦可為由丙烯 與可與丙烯共聚合之單體而獲得之共聚物。作為可與丙婦 共聚合之單體’例如可列舉:乙稀、卜戊烯、κ己烯、^ 辛烯、卜癸烯、4·甲基-1·戍婦、3-甲基小戊稀等α-嫦烴 等。 上述結晶性聚丙烯系樹脂較佳為與上述非晶質丙烯_(! 丁烯)共聚物同樣地藉由使用二茂金屬觸媒聚合而獲得。 若使用如此而獲得之結晶性聚丙烯系樹脂,則可防止由低 分子量成分溢出引起之對被黏著體之污染。 上述結晶性聚丙稀系樹脂之結晶度較佳為1 〇%以上,進 而較佳為20%以上。具代表性的是藉由示差掃描熱量分析 (DSC, differential scanning calorimeter)或X射線繞射而求 得結晶度。 163077.doc 201249953 上述黏著㈣於不損害本發明之效果之範Μ,亦可進 而包含其他成分。作為該其他成分,例如可列舉:抗氧化 劑、紫外線吸收劑、光穩定劑、耐熱穩定劑、抗^電= 等。其他成分之種類及使用量可根據目的而適當選擇。1 c.基材層 $ 作為構成上述基材層之材料,可採用任意之適當之材 料。作為構成上述基材層之材料,例如可列舉:聚對苯_ y酸乙二酯(ΡΕΤ)等聚酯系樹脂;聚乙烯(ΡΕ)、聚丙烯(ρρ) 等聚稀烴系樹脂;聚酿亞胺(ΡΙ);乙稀·乙酸乙稀醋共聚物 (EVA) ·’聚醚醚_ (ΡΕΕΚ);聚氣乙烯(pvc)等聚氣乙烯系 樹脂;聚苯乙烯系樹脂;丙烯酸系樹脂;氟系樹脂;纖維 素系樹脂;聚碳酸酯系樹脂;金屬;紙等。基材層亦可為 包含同種或不同種之材料之多層構造。Na is 0.20 μ§ or less, and M 2+ NH/ is. , the following situation / and. Knife is not. ~ Next, in order to adjust the adhesion of the adhesive layer (the result is the upper elastic modulus, the above adhesive layer may also contain crystal: = resin. By containing a crystalline polypropylene resin, it can be lowered 4^ Increasing the above-mentioned elastic modulus of the material. The ratio of the crystalline polypropylene resin can be set according to the required adhesive force and the storage elastic modulus, and the ratio is relative to the above-mentioned amorphous propylene sulfonate copolymer L. The total weight of the crystalline polypropylene resin is preferably 〇% by weight to 45% by weight, more preferably 〇% by weight to 〇4% by weight, more preferably 〇 Weight %~20 weight 〇/. . The above crystalline polypropylene-based resin may be a homopolypropylene or a copolymer obtained by copolymerizing propylene with a monomer copolymerizable with propylene. Examples of the monomer copolymerizable with the propylene group include, for example, ethylene, pentene, κ hexene, octene, decene, 4 methyl-1, daughter, and 3-methyl pentane. Dilute α-anthracene and the like. The crystalline polypropylene-based resin is preferably obtained by polymerization using a metallocene catalyst in the same manner as the above amorphous propylene (!) butene copolymer. When the crystalline polypropylene resin obtained in this manner is used, contamination of the adherend due to overflow of the low molecular weight component can be prevented. The crystallinity of the above crystalline polypropylene resin is preferably 1% by mole or more, and more preferably 20% or more. Typically, crystallinity is obtained by differential scanning calorimeter (DSC) or X-ray diffraction. 163077.doc 201249953 The above-mentioned adhesion (4) may be carried out without impairing the effects of the present invention, and may further include other components. Examples of the other component include an antioxidant, an ultraviolet absorber, a light stabilizer, a heat stabilizer, and an electric resistance. The type and amount of other ingredients may be appropriately selected depending on the purpose. 1 c. Substrate layer $ As the material constituting the above substrate layer, any appropriate material can be used. Examples of the material constituting the base material layer include a polyester resin such as polyethylene terephthalate (ethylene) or a polyolefin resin such as polyethylene (ρρ) or the like; Brewed imine (ΡΙ); ethylene · acetic acid ethyl acetate copolymer (EVA) · 'polyether ether _ (ΡΕΕΚ); polystyrene (pvc) and other gas-rich vinyl resin; polystyrene resin; acrylic Resin; fluorine-based resin; cellulose-based resin; polycarbonate-based resin; metal; paper, and the like. The substrate layer may also be a multilayer construction comprising materials of the same or different species.

上述黏著劑層於不損害本發明之效果之範圍内,亦可進 而包含其他成分《作為該其他成分,例如可使用與上述B 項中所說明之可包含於黏著劑層中之其他成分相同之成 分。 D.黏著帶之製造方法 本發明之黏著帶較佳為將上述黏著劑層及上述基材層之 形成材料共擠壓成形而製造。藉由共擠壓成形,可以較少 之步驟數且不使用有機溶劑而製造層間之接著性良好之黏 著帶》 於上述共擠壓成形中,上述黏著劑層及上述基材層之形 成材料可使用藉由任意之適當之方法將上述各層之成分混 163077.doc 201249953 合而成之材料》 作為上述共擠壓成形之具體方法,例如可列舉如下 法:於與模具連結之至少2台擠壓機 A下方 | J丹T —台供仏 黏著劑層形成材料,向另一台供給基材層形成材料於: 融後進行㈣,藉由接觸輥成形法進行拉取,而藉 體》㈣時’各形成材料合流之部分越靠近模具出σ(模 唇)越好。其原因在於:於模具内難以產生各形成材料之 合流不良。因A,作為上述模具,適宜使用多歧管形式之 模具。再者,於發生合流不良之情形日夺,會發生合流不均 等外觀不良,具體而言會於經擠壓之黏著劑層與基材層之 間發生波狀之外觀不均,故而欠佳。又,合流不良例如係 由如下原因引起:不同種形成材料於模具内之流動性(熔 融黏度)之差異較大,及各層之形成材料之剪切速率之差 異較大,因此若使用多歧管形式之模具,則對於存在流動 性差之不同種形成材料,與其他形式(例如進料模組形式) 相比,材料選擇之範圍更廣。用於各形成材料之熔融之擠 壓機之螺桿類型可為單軸,亦可為雙軸。擠壓機亦可為3 台以上。於擠壓機為3台以上之情形時,可進而供給其他 層之形成材料。又,使用3台以上之擠壓機而製造2層構造 (基材層+黏著劑層)之黏著帶之情形時,將同一形成材料 供於鄰接之2台以上之擠壓機即可,例如使用3台擠壓機之 情形時,可將同一形成材料供於鄰接之2台擠壓機。 上述共擠壓成形之成形溫度較佳為l6〇〇c〜22〇〇c,進而 較佳為170 C〜200 C。只要為此種範圍,則成形穩定性優 163077.doc .14 · 201249953 異。 々述黏著劑層形成材料與上述基材層形成材料於溫度 刚c、剪切速率_see•丨之條件下之剪切黏度之差(黏著 劑形成材料_基材層形成材料)較佳為-150 Pa.s〜600 Pa.s, 進而較佳為-100 Pa,s〜55〇 pa_尤佳為_5〇 ^〜則 a s ,、要為此種範圍,則上述黏著劑形成材料及基材層 形成材料於模具内之流動性接近,可防止合流不良之發 生。再者,剪切黏度可利用雙毛細管型之伸長黏度計而測 定。 實施例 以下,藉由實施例具體說明本發明,但本發明不受該等 實施例之任何限定。又’於實施例中,只要無特別明記, 則「份」及「%」為重量基準。 [實施例1 ] 黏著劑層形成材料係使用利用二茂金屬觸媒聚合而獲得 之非晶質丙烯-(1-丁烯)共聚物(住友化學公司製造、商品 名「Tafthren H5002」:源自丙烯之構成單元9〇莫耳%/源自 1- 丁稀之構成單元1〇莫耳%、Mw=230,000、Mw/Mn= 1.8) 〇 基材層形成材料係使用乙烯-乙酸乙烯酯共聚物 (EVA)(二井杜邦公司製造、商品名「Evafiex ρ_ 1 〇〇7」)。 分別將上述黏著劑形成材料與基材層形成材料投入至播 壓機中’進行Τ型模熔融共擠壓(擠壓機: ENGINEERING公司製造、商品名「GM30-28」/Τ型模: 163077.doc 201249953 進料模組方式;擠壓溫度18〇。〇,並將熔融狀態之樹脂與 向接觸輥成形部通紙之Si塗佈PET間隔層(三菱化學公司製 造、商品名「Diafoil MRF」:38 μηι)積層之後,進行冷 卻,而獲得黏著劑層之厚度為45 μηι且基材層之厚度為16〇 μηι之黏著帶。再者’各層之厚度係藉由τ型模出口之形狀 而控制。 [實施例2] 黏著劑層形成材料係使用利用二茂金屬觸媒聚合而獲得 之非晶質丙烯-(1-丁烯)共聚物(住友化學公司製造、商品 名「Tafthren Η5002」:源自丙烯之構成單元9〇莫耳%/源自 1- 丁烯之構成單元10莫耳%、Mw=230,000 ' Mw/Mn= 1.8)80份、及利用二茂金屬觸媒聚合而獲得之結晶性聚丙 烯系樹脂(曰本聚丙烯公司製造、商品名r WINTEC WFX4」、Mw=363,000、Mw/Mn=2.87)20份之混合物。 基材層形成材料係使用有乙烯-乙酸乙烯酯共聚物(三井 杜邦公司製造、商品名「Evaflex P-1007」)。The above-mentioned adhesive layer may further contain other components as the other component, for example, the same as the other components which can be included in the adhesive layer described in the above item B, and may be contained in the range which does not impair the effects of the present invention. ingredient. D. Method for Producing Adhesive Tape The adhesive tape of the present invention is preferably produced by co-extruding a material for forming the above-mentioned adhesive layer and the above-mentioned base material layer. By co-extrusion molding, an adhesive tape having good adhesion between layers can be produced with a small number of steps and without using an organic solvent. In the above co-extrusion molding, the adhesive layer and the substrate layer can be formed. The material obtained by mixing the components of the above layers by any appropriate method is 163077.doc 201249953. As a specific method of the above co-extrusion molding, for example, the following method may be mentioned: at least 2 extrusions connected to the mold Below the machine A | J Dan T - the supply of the adhesive layer forming material, and the supply of the base material to the other substrate: after the melting (4), by the contact roll forming method, while borrowing (4) The closer the portion where the forming materials are joined, the closer the sigma (mould lip) is to the mold. The reason for this is that it is difficult to cause a poor merging of the respective forming materials in the mold. For A, as the above mold, a mold in the form of a multi-manifold is suitably used. Further, in the case where the merging failure occurs, appearance defects such as uneven merging may occur, and in particular, wavy appearance unevenness may occur between the extruded adhesive layer and the substrate layer, which is not preferable. Further, the confluence failure is caused, for example, by the fact that the difference in fluidity (melt viscosity) of the different kinds of forming materials in the mold is large, and the difference in the shear rate of the material forming the layers is large, so if a multi-manifold is used, The form of the mold, for different types of forming materials with poor fluidity, the range of material selection is wider than other forms (such as the form of the feed module). The type of screw used for the extrusion of each of the formed materials may be a single shaft or a double shaft. There are also more than 3 extruders. When the number of extruders is three or more, the material for forming the other layers can be further supplied. In the case where an adhesive tape having a two-layer structure (base material layer + adhesive layer) is produced by using three or more extruders, the same forming material may be supplied to two or more adjacent extruders, for example, for example, In the case of using three extruders, the same forming material can be supplied to two adjacent extruders. The forming temperature of the above co-extrusion molding is preferably from 16 ° C to 22 ° C, and more preferably from 170 C to 200 ° C. As long as it is in this range, the forming stability is excellent 163077.doc .14 · 201249953 is different. The difference between the adhesive layer forming material and the shearing viscosity of the substrate layer forming material under the conditions of temperature c and shear rate _see•丨 (adhesive forming material_base layer forming material) is preferably -150 Pa.s to 600 Pa.s, further preferably -100 Pa, s~55 〇 pa _ _ _ _ 〇 〜 〜 〜 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The fluidity of the base material forming material in the mold is close to each other, and the occurrence of poor joining can be prevented. Further, the shear viscosity can be measured by using a double capillary type elongational viscometer. EXAMPLES Hereinafter, the present invention will be specifically described by examples, but the present invention is not limited by the examples. Further, in the examples, "parts" and "%" are based on weight unless otherwise specified. [Example 1] The adhesive layer forming material was an amorphous propylene-(1-butene) copolymer obtained by polymerization using a metallocene catalyst (manufactured by Sumitomo Chemical Co., Ltd., trade name "Tafthren H5002": derived from The constituent unit of propylene is 9% by mole%, and the constituent unit derived from 1-butylene is 1%, Mw=230,000, Mw/Mn = 1.8) The base material layer forming material is ethylene-vinyl acetate copolymer. (EVA) (manufactured by Mitsui DuPont, trade name "Evafiex ρ_ 1 〇〇7"). The adhesive forming material and the base material forming material were respectively put into a weaving machine to perform a melt-co-extrusion of a die-type mold (extrusion machine: manufactured by the company, trade name "GM30-28" / Τ mold: 163077 .doc 201249953 Feeding module method; extrusion temperature: 18 〇. The resin in the molten state and the Si-coated PET spacer layer that is passed through the forming section of the contact roll (manufactured by Mitsubishi Chemical Corporation, trade name "Diafoil MRF") : 38 μηι) After lamination, cooling is performed to obtain an adhesive tape having a thickness of 45 μm and a thickness of the substrate layer of 16 〇μηι. Further, the thickness of each layer is determined by the shape of the outlet of the τ-die. [Example 2] The adhesive layer forming material was an amorphous propylene-(1-butene) copolymer obtained by polymerization using a metallocene catalyst (manufactured by Sumitomo Chemical Co., Ltd., trade name "Tafthren Η5002": The constituent unit derived from propylene 9 〇 mol % / the constituent unit derived from 1-butene 10 mol %, Mw = 230,000 ' Mw / Mn = 1.8) 80 parts, and obtained by polymerization using a metallocene catalyst Crystalline polypropylene resin A mixture of 20 parts of the product of the company, trade name: r WINTEC WFX4", Mw = 363,000, Mw / Mn = 2.87). The base material forming material is ethylene-vinyl acetate copolymer (manufactured by Mitsui DuPont, trade name " Evaflex P-1007").

分別將上述黏著劑形成材料與基材層形成材料投入至擠 壓機中,進行T型模熔融共擠壓(擠壓機:GM ENGINEERING公司製造、商品名「GM30-28」/T型模: 進料模組方式;擠壓溫度180。〇,並將熔融狀態之樹脂與 向接觸輥成形部通紙之Si塗佈PET間隔層(三菱化學公司製 造、商品名「Diafoil MRF」:38 μιη)積層之後,進行冷 卻’而獲得黏著劑層之厚度為45 μηι且基材層之厚度為160 μηι之黏華帶。 163077.doc • 16- 201249953 [實施例3] 除了將非晶質丙稀·(1·丁稀)共聚物之混合量自8〇份換為 6〇份’將結晶性聚㈣系樹脂之混合量自2G份換為4〇份以 外’與實施例2同樣地獲得黏著帶。 [比較例1] 除了將非晶質丙烯-(1-丁烯)共聚物之混合量自8〇份換為 5〇份,將結晶性聚丙烯系樹脂之混合量自2〇份換為5〇份之 外’與實施例2同樣地獲得黏著帶。 [比較例2] 調配將丙稀酸丁酯1〇〇份與丙烯酸5份共聚合而獲得之共 聚物(重量平均分子量:9〇〇,〇〇〇、固形物成分:20。/〇)100 份、作為交聯劑之異氰酸酯系交聯劑(日本聚氨酯公司製 造、商品名「Coronate L」)2份、及環氧系交聯劑(三菱瓦 斯公司製造、商品名r Tetrad C」)1份而調製成黏著劑層 形成材料。 將該黏著劑層形成材料以乾燥後之厚度成為45 μιη之方 式塗佈於經矽剝離處理之聚酯膜(厚度:3 8 μηι)上’以 120 C乾燥2分鐘,而獲得丙烯酸系黏著劑。 其後’將上述丙烯酸系黏著劑轉印於以乙烯-乙酸6烯 醋共聚物作為形成材料之基材層(厚度:160 μιη)上’而獲 得黏著帶。 [評價] 將實施例及比較例中所獲得之黏著帶供於以下之評價。 將結果示於表1。 163077.doc 17 201249953 (1) 黏著力(剝離速度300 mm/min) 將獲得之黏著帶以50°C熟化2天後,藉由4英吋半導體晶 圓之鏡面(矽製)、及依據JIS Z 0237(2000)之方法(貼合條 件:2 kg輥往返1次、剝離速度:3〇〇 mm/min、剝離角度 180°)進行測定。 (2) 隆起寬度 於半導體晶圓(矽製)上放置厚度30 μπι、寬度2 cm之鋁 板。以橫跨該鋁板之方式貼附切為長度1〇 cm寬度2 cm之 黏著帶(2 kg親往返1次),並於顯微鏡下觀察針對階差3〇 μιη之隆起寬度而測定。隆起寬度係於剛貼附黏著帶後、 及貼附經過1小時後測定》 (3) 儲存彈性模數(G·) 黏著劑層之儲存彈性模數係使用動態黏彈性譜測定器 (Rheometric Scientific 公司製造、商品名「ares」),以 頻率Η) Hz、升溫速度5t/分、〜1Q()t之範圍進行測 定。 (4) 損耗正切tan5 以與上述儲存彈性模數(G,)相同之條件下,測定儲存彈 性模_及損失彈性模數(G")’藉由下述式算出黏著劑 層於20 C及80C下之損耗正切tan δ。 損耗正切tank損失彈性模數(G,,)/儲存彈性模數 (5) 分子量測定 實施例及比較食"中所使用之利用二茂金屬觸媒聚人 獲得之非晶質丙烯仆丁稀)共聚物(住友化學公司製: 163077.doc •18· 201249953 商品名「Tafthren H5002」)、及比較例3中所使用之共聚 物之分子量係藉由以下方式測定。即,將試樣製備為1 .〇 g/Ι之THF溶液並靜置一晚後,以孔徑0.45 μιη之薄膜過濾 器進行過濾,將所獲得之濾液投入至TOSOH公司製造之 HLC-8120GPC中,於以下之條件下進行測定,藉由聚苯乙 烯換算而算出分子量。 管柱:TSKgel Super HZM-H/HZ4000/HZ3000/HZ2000 管柱尺寸:6.0 mm I.D.x 150 mmThe adhesive forming material and the substrate layer forming material were respectively placed in an extruder to perform T-die melt co-extrusion (extruder: GM ENGINEERING, trade name "GM30-28" / T-die: The feed module method; the extrusion temperature of 180 〇, and the resin in the molten state and the Si-coated PET spacer layer which is passed through the forming portion of the contact roll (manufactured by Mitsubishi Chemical Corporation, trade name "Diafoil MRF": 38 μιη) After the lamination, cooling is performed to obtain a viscous tape having a thickness of the adhesive layer of 45 μm and a thickness of the substrate layer of 160 μη. 163077.doc • 16-201249953 [Example 3] In addition to amorphous propylene· (1. Dilute) The amount of the copolymer was changed from 8 parts to 6 parts. 'The amount of the crystalline poly(tetra) resin was changed from 2G to 4 parts, and the adhesive tape was obtained in the same manner as in Example 2. [Comparative Example 1] In addition to changing the mixing amount of the amorphous propylene-(1-butene) copolymer from 8 parts to 5 parts, the amount of the crystalline polypropylene resin was changed from 2 parts to 2 parts. In addition to 5 parts, an adhesive tape was obtained in the same manner as in Example 2. [Comparative Example 2] Formulation of butyl acrylate Copolymer obtained by copolymerization of 1 part of ester with 5 parts of acrylic acid (weight average molecular weight: 9 Å, hydrazine, solid content: 20%), 100 parts, isocyanate crosslinking as a crosslinking agent Two parts of a solvent (manufactured by Nippon Polyurethane Co., Ltd., trade name "Coronate L") and an epoxy-based crosslinking agent (manufactured by Mitsubishi Gas Corporation, trade name r Tetrad C) were prepared in one part to prepare an adhesive layer forming material. The adhesive layer forming material was applied to a polyester film (thickness: 38 μm) which was subjected to a ruthenium peeling treatment to a thickness of 45 μm after drying to dry at 120 C for 2 minutes to obtain an acrylic adhesive. Then, the above-mentioned acrylic adhesive was transferred onto a substrate layer (thickness: 160 μm) using an ethylene-acetic acid 6-olefin vinegar copolymer as a forming material to obtain an adhesive tape. [Evaluation] In the examples and comparative examples, The obtained adhesive tape was used for the following evaluation. The results are shown in Table 1. 163077.doc 17 201249953 (1) Adhesion (peeling speed 300 mm/min) After the obtained adhesive tape was aged at 50 ° C for 2 days, Mirrored by a 4 inch semiconductor wafer ( ()) and according to JIS Z 0237 (2000) method (bonding conditions: 2 kg roll back and forth, peeling speed: 3 〇〇 mm / min, peeling angle 180 °). (2) Width of the semiconductor An aluminum plate having a thickness of 30 μm and a width of 2 cm is placed on the wafer. The adhesive tape cut into a length of 1 cm and a width of 2 cm is attached across the aluminum plate (2 kg pro-reciprocated once). The observation under the microscope was carried out for the width of the ridge of the step 3 〇 μιη. The width of the ridge is measured immediately after attaching the adhesive tape and after 1 hour of attachment. (3) Storage elastic modulus (G·) Storage elastic modulus of the adhesive layer using a dynamic viscoelastic spectrometer (Rheometric Scientific The company's manufacturing, product name "ares", is measured in the range of frequency Η) Hz, heating rate 5t/min, and ~1Q()t. (4) Loss tangent tan5 The storage elastic modulus and the loss elastic modulus (G") are measured under the same conditions as the above stored elastic modulus (G,). The adhesive layer is calculated at 20 C by the following formula. Loss tangent tan δ at 80C. Loss tangent tank loss elastic modulus (G,,) / storage elastic modulus (5) Molecular weight determination example and comparative food used in the use of the metallocene catalyst to obtain amorphous polypropylene The molecular weight of the copolymer (manufactured by Sumitomo Chemical Co., Ltd.: 163077.doc • 18·201249953, trade name "Tafthren H5002") and the copolymer used in Comparative Example 3 was measured by the following method. That is, the sample was prepared as a THFg/Ι THF solution and allowed to stand overnight, and then filtered through a membrane filter having a pore size of 0.45 μm, and the obtained filtrate was poured into an HLC-8120GPC manufactured by TOSOH Co., Ltd. The measurement was carried out under the following conditions, and the molecular weight was calculated by polystyrene conversion. Column: TSKgel Super HZM-H/HZ4000/HZ3000/HZ2000 Column Size: 6.0 mm I.D.x 150 mm

管柱溫度:40°CColumn temperature: 40 ° C

溶離液:THF 流量:0.6 ml/min 注入量:20 μΐ 檢測器:RI(示差折射率檢測器) 又,實施例2〜3及比較例1中所使用之利用二茂金屬觸媒 聚合而獲得之結晶性聚丙烯系樹脂(日本聚丙烯公司製 造、商品名「WINTEC WFX4」)之分子量係藉由以下方式 測定。即,將試樣製備為0.1 0%(w/w)之鄰二氣苯溶液,於 140°C下進行溶解後,將該溶液以孔徑為1.0 μπι之燒結過 濾器進行過濾,將所獲得之濾液投入至Waters公司製造凝 膠滲透層析儀Alliance GPC 2000型中,於以下之條件下進 行測定,藉由聚苯乙稀換算而算出分子量。Dissolution: THF Flow rate: 0.6 ml/min Injection amount: 20 μΐ Detector: RI (differential refractive index detector) Further, the polymerization using a metallocene catalyst was used in Examples 2 to 3 and Comparative Example 1. The molecular weight of the crystalline polypropylene resin (manufactured by Nippon Polypropylene Co., Ltd., trade name "WINTEC WFX4") was measured by the following method. That is, the sample was prepared as a 0.10% (w/w) o-diphenylbenzene solution, and after dissolving at 140 ° C, the solution was filtered through a sintered filter having a pore size of 1.0 μm, and the obtained solution was obtained. The filtrate was poured into a gel permeation chromatograph Alliance GPC 2000 manufactured by Waters Co., Ltd., and the measurement was carried out under the following conditions, and the molecular weight was calculated by conversion of polystyrene.

管柱:TSKgel GMH6-HT,TSKgel GMH6-HTL 管柱尺寸:7.5 mm I.D.x300 mm各2根 管柱溫度:140°C 163077.doc -19- 201249953 溶離液:鄰二氣苯 流量:1.0 ml/min 注入量:0 · 4 m 1 檢測器:RI(示差折射率檢測器) [表1] 實施例1 實施例2 實施例3 比較例1 比較例2 基材層 材料 EVA EVA EVA EVA EVA 厚度(μηι) 160 160 160 160 160 黏著 劑層 主要樹脂 非晶質丙烯-(1-丁烯)共聚物 丙烯酸系 黏著劑 添加樹脂 - 結晶性聚丙烯系樹脂 - 調配比例(主要樹脂wt%/添 加樹脂wt%) 100/0 80/20 60/40 50/50 100/0 厚度(μηι) 45 45 45 45 45 評價 黏著力(N/20mm) 1.22 0.55 0.25 0.18 0.75 储存彈性才 凑數(20°C)(MPa) 1.8 4.1 23.6 105 0.42 tan8 20°C 0.23 0.21 0.11 0.07 0.09 80°C 0.52 0.46 0.22 0.08 0.03 隆起寬 度(μηι) 剛貼附後 210 290 420 640 280 貼附1小時後 215 298 440 750 360 增加率 2.4 2.8 4.8 17.2 28.6 由表1得知,本發明之黏著帶藉由黏著劑層具有特定之 儲存彈性模數而隆起寬度較小,又,藉由具有特定之損耗 正切tanS而隆起寬度之增加率較小。此種黏著帶對被黏著 體之凹凸(例如半導體晶圓之圖案)之追隨性良好,可良好 地填埋該凹凸。 產業上之可利用性 本發明之黏著帶例如可適宜地用於半導體裝置製造時之 工件(半導體晶圓等)之保護。 【圖式簡單說明】 圖1係本發明之較佳實施形態之黏著帶之概略剖面圖。 •20- 163077.doc 201249953 圖2係說明成為本發明之黏著帶之階差追隨性之指標的 「隆起寬度」之圖。 【主要元件符號說明】 10 黏著劑層 20 • 基材層 100 黏著帶 163077.doc -21 ·Column: TSKgel GMH6-HT, TSKgel GMH6-HTL Column size: 7.5 mm IDx300 mm 2 columns Temperature: 140°C 163077.doc -19- 201249953 Dissolution: O-dibenzene flow: 1.0 ml/ Min Injection amount: 0 · 4 m 1 Detector: RI (differential refractive index detector) [Table 1] Example 1 Example 2 Example 3 Comparative Example 1 Comparative Example 2 Substrate layer material EVA EVA EVA EVA EVA Thickness ( Ηηι) 160 160 160 160 160 Adhesive layer main resin amorphous propylene-(1-butene) copolymer acrylic adhesive additive resin - crystalline polypropylene resin - blending ratio (main resin wt% / added resin wt %) 100/0 80/20 60/40 50/50 100/0 Thickness (μηι) 45 45 45 45 45 Evaluation of adhesion (N/20mm) 1.22 0.55 0.25 0.18 0.75 Storage elasticity only (20°C) MPa) 1.8 4.1 23.6 105 0.42 tan8 20°C 0.23 0.21 0.11 0.07 0.09 80°C 0.52 0.46 0.22 0.08 0.03 Width (μηι) Just attached 210 290 420 640 280 Attached 1 hour later 215 298 440 750 360 Increase rate 2.4 2.8 4.8 17.2 28.6 It is known from Table 1 that the adhesive tape of the present invention has a specific storage by the adhesive layer. Elastic modulus and the ridge width is small but also, by having a specific loss tangent of the smaller rate of increase tanS bulge width. Such an adhesive tape has good followability to the unevenness of the adherend (e.g., a pattern of a semiconductor wafer), and the unevenness can be well filled. Industrial Applicability The adhesive tape of the present invention can be suitably used, for example, for the protection of a workpiece (semiconductor wafer or the like) at the time of manufacture of a semiconductor device. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing an adhesive tape according to a preferred embodiment of the present invention. • 20-163077.doc 201249953 Fig. 2 is a view showing the "bump width" which is an index of the step followability of the adhesive tape of the present invention. [Main component symbol description] 10 Adhesive layer 20 • Substrate layer 100 Adhesive tape 163077.doc -21 ·

Claims (1)

201249953 七、申請專利範園·· 種黏著帶,其具備著劑層與基材層, β亥黏著劑層於2〇〇c下之儲存彈性模數為〇 Pa Pa ’該黏著劑層於20°c〜80°c下之損耗正切 tan5為〇.〗以上。 2.如5旁求項I之勒莫德 +x , 系者帶’其中上述黏著劑層包含使用二茂 金屬觸媒聚合而獲得之非晶質丙烯-〇·丁烯)共聚物,該 丙稀仆丁稀)共聚物之重量平均分子量(Mw)為200,_ 該丙烯-0· 丁烯)共聚物之分子量分佈(Mw ic/\ p 〇 士叫求項I或2之黏著帶,其中針 之鏡面的τ 7製牛導體鏡面晶圓 斤規疋之180。剝離黏著力 _〜3·〇Ν/20_β f 刀為 0.2 Ν/20 4· 求項丨或2之黏著帶,其係將黏 材層形成材料共擠壓成形而獲得。齊1心成材料與基 5·如4求項3之黏著帶’其係將黏著劑 層形成材料共擠壓成形而獲得。 %㈣料與基材 163077.doc201249953 VII. Applying for the patent garden, the adhesive tape, which has the agent layer and the substrate layer, and the storage elastic modulus of the β-adhesive layer under 2〇〇c is 〇Pa Pa 'the adhesive layer is 20 The loss tangent tan5 at °c~80°c is 〇.〗 above. 2. For example, the Lemod+x of the item I of the fifth aspect, the pair of the above-mentioned adhesive layer containing the amorphous propylene-indene butene copolymer obtained by polymerization using a metallocene catalyst, the C The weight average molecular weight (Mw) of the copolymer is 200, the molecular weight distribution of the copolymer of propylene-0·butene) (Mw ic/\ p 〇 叫 叫 I I I I I I I The mirror of the needle is τ 7 made of the conductor mirror wafer 疋 疋 180. Peeling adhesion _~3·〇Ν/20_β f The knife is 0.2 Ν/20 4· The item 丨 or 2 of the adhesive tape, the system will The adhesive layer forming material is obtained by co-extrusion molding. The adhesive material of the base material and the base material of the adhesive layer is obtained by co-extruding the adhesive layer forming material. % (four) material and base Material 163077.doc
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