TW201247414A - Laminated board, circuit board, semiconductor package, and method for manufacturing laminated board - Google Patents

Laminated board, circuit board, semiconductor package, and method for manufacturing laminated board Download PDF

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Publication number
TW201247414A
TW201247414A TW101113166A TW101113166A TW201247414A TW 201247414 A TW201247414 A TW 201247414A TW 101113166 A TW101113166 A TW 101113166A TW 101113166 A TW101113166 A TW 101113166A TW 201247414 A TW201247414 A TW 201247414A
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Taiwan
Prior art keywords
layer
resin
base material
material layer
laminate
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TW101113166A
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Chinese (zh)
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TWI568587B (en
Inventor
Iji Onozuka
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Sumitomo Bakelite Co
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Publication of TW201247414A publication Critical patent/TW201247414A/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/22Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
    • B32B5/24Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
    • B32B5/26Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer another layer next to it also being fibrous or filamentary
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • B32B15/08Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B5/00Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts
    • B32B5/22Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed
    • B32B5/24Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer
    • B32B5/28Layered products characterised by the non- homogeneity or physical structure, i.e. comprising a fibrous, filamentary, particulate or foam layer; Layered products characterised by having a layer differing constitutionally or physically in different parts characterised by the presence of two or more layers which are next to each other and are fibrous, filamentary, formed of particles or foamed one layer being a fibrous or filamentary layer impregnated with or embedded in a plastic substance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822Multilayer substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49827Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894Materials of the insulating layers or coatings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2260/00Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
    • B32B2260/02Composition of the impregnated, bonded or embedded layer
    • B32B2260/021Fibrous or filamentary layer
    • B32B2260/023Two or more layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2260/00Layered product comprising an impregnated, embedded, or bonded layer wherein the layer comprises an impregnation, embedding, or binder material
    • B32B2260/04Impregnation, embedding, or binder material
    • B32B2260/046Synthetic resin
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2262/00Composition or structural features of fibres which form a fibrous or filamentary layer or are present as additives
    • B32B2262/10Inorganic fibres
    • B32B2262/101Glass fibres
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2305/00Condition, form or state of the layers or laminate
    • B32B2305/07Parts immersed or impregnated in a matrix
    • B32B2305/076Prepregs
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/30Properties of the layers or laminate having particular thermal properties
    • B32B2307/308Heat stability
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/50Properties of the layers or laminate having particular mechanical properties
    • B32B2307/558Impact strength, toughness
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/70Other properties
    • B32B2307/732Dimensional properties
    • B32B2307/734Dimensional stability
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/08PCBs, i.e. printed circuit boards
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0271Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0183Dielectric layers
    • H05K2201/0191Dielectric layers wherein the thickness of the dielectric plays an important role

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Laminated Bodies (AREA)
  • Reinforced Plastic Materials (AREA)

Abstract

The laminated board 100c according to the present invention is obtained by laminating a plurality of prepregs having fiber base layers and resin layers, and forming a wiring layer or a buildup layer on the top, wherein when in the lamination direction, the distance between the central line (A1) of a first fiber base layer (101) provided closest to a surface (110) and the central line (A3) of a second fiber base layer (101a) adjacent to the first fiber base layer (101) is set as D1, the distance between the central line (A2) of a third fiber base layer (105) provided closest to another surface (111) and the central line (A4) of a fourth fiber base layer (105a) adjacent to the third fiber base layer (105) is set as D2, the thickness of the laminated board is set as D3, and the number of the fiber base layers in the laminated board is set as n (where n is an integer of 2 or above), either one of the following conditions of formulae (1) and (2) is satisfied: D3/n < D1 (1) D3/n < D2 (2).

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201247414 六、發明說明: 【發明所屬之技術領域】 本發明係關於一種積層板、電路基板、半導體封裝及積層 板之製造方法。 【先前技術】 近年來’隨著電子機器要求高功能化及輕薄短小化,電路 基板有日益薄型化之傾向。 通常之電路基板主要由積層有具備纖維基材層與樹脂層 之複數個預浸體而成之積層板構成。現行之積層板之主流係 例如於CPU(Central Processing Unit,中央運算處理裝置)中 所使用之FCBGA(Flip Chip BaU Grid Array,倒裝芯片球拇 格陣列)用途中厚度為0.8 mm左右者。 近年來,由於要求輕薄短小化,根據因削減構件成本、加 工成本等之基板成本降低,電氣特性提高等理由,而推進積 層板之薄型化。最近’亦開發積層板之厚度為〇.4_左右、 進而0.2 mm以下者。 然而,於縮小積層板之厚度之情形時,由於積層板之強度 降低或熱㈣雜增加叫大積層板.曲。其結果,有: 半導體封裝之勉曲之變動量增大,安裂良率降低。^ ’例如有以下文獻中記載之方 法。 於專利文獻U曰本專利特開昭 ^2428 5虎公報)中記載 101113166 λ 201247414 有藉由將玻璃不織布之拉伸強度之縱及橫的比設為一定範 圍,而減少預浸體之翹曲及扭曲。 專利文獻2(日本專利特開平4-259543號公報)係關於一種 翹曲或扭曲較少’尺寸穩定性優異之印刷電路用積層板之製 - 造方法。於專利文獻2中記載有藉由控制表面層中所使用之 • 玻璃織布之縱、橫方向之打入條數的差,及中間層中所使用 之玻璃不織布之縱、橫之拉伸強度比,而實現縱、橫兩方向 之平衡。 於專利文獻3(曰本專利特開2008-258335號公報)中記載 有藉由使用纖維基材相對於厚度方向偏於一側之增層,可有 效防止半導體封裝之翹曲。 [先前技術文獻] [專利文獻] 專利文獻1 :日本專利特開昭62-292428號公報 專利文獻2:曰本專利特開平4_259543號公報 專利文獻3 :曰本專利特開2〇〇8_258335號公報 【發明内容】 ^ (發明所欲解決之問題) 〜 然而,隨著電路基板之進一步之薄型化發展,積層板之翹 曲逐漸變彳于更顯著。又’隨著積層板之翹曲之增大,電路基 板之翹曲之增大及由其引起的半導體封裝之翹曲之增大亦 逐漸變得更顯著。 101113166 5 201247414 專利文獻1、2及3之技術於解決積層板之翹曲方面較有 效果,但隨著電路基板之進一步之薄型化,而期望開發翹曲 進而減少之積層板。 本發明係鑒於如上所述之課題而完成者,其課題在於提供 一種減少翹曲而適於用作薄型電路基板之積層板。 (解決問題之手段) 根據本發明,可提供一種積層板, 其係積層有具備纖維基材層與樹脂層之複數個預浸體而 成,且於上部形成有佈線層或形成有增層者;並且 於積層方向上, 將最接近一個面而配置之第一纖維基材層之中心線與鄰 接於上述第一纖維基材層之第二纖維基材層之中心線的距 離設為D1, 將最接近另一面而配置之第三纖維基材層之中心線與鄰 接於上述第三纖維基材層之第四纖維基材層之中心線的距 離設為D2, 將該積層板之厚度設為D3, 將該積層板之纖維基材層之層數設為n(其中,η為2以上 之整數)時, 滿足下述式(1)及(2)之條件中之任一者: D3/n&lt;Dl (1) D3/n&lt;D2 (2)。 101113166 6 201247414 進而,根據本發明’可提供一種電路基板, 其係包含上述本發明中之積層板。 進而,根據本發明,可提供一種半導體封裴,其係於上述 本發明中之電路基板上搭載有半導體元件。 進而,根據本發明,可提供一種積層板之製造方法, 其係製造積層有具備纖維基材層與樹脂層之複數個預浸 體而成,且於上部形成有佈線層或形成有增層之積層板之方 法;且包括: 維基材層於厚度方向上偏 第一步驟’其係準備包含上述纖 於一側之預浸體之複數個預浸體; 第二步驟,其係以於積層方向上, 之中心線與鄰 之中心線的距 之中心線與鄰 之中心線的距 將最接近-個面而配置之第一纖維 減上述第-纖絲材狀第二纖維基材^ ~~纖維基材層 四纖維基材層 將最接近另一面而配置之第 接於上述第三纖維基材層之第 離設為D2, 將該積層板之厚度設為D3, n(其中,η為2以上 將該積層板之纖維基材層之層數設為 之整數)時, 者之方式使上述複數 滿足下述式(1)及(2)之條件中之住 個預浸體重疊, 101113166 201247414 D3/n&lt;Dl (1) D3/n&lt;D2 (2);及 第三步驟,其係使重疊之上述複數個預浸體成形。 (發明效果) 根據本發明,可提供-種藉由纖維基材層配置於積層板之 外侧’而使月讀應力向積層板之中心移動,因此減少勉曲而 適於薄型電路基板之積層板。 【實施方式】 以下,使用圖式對本發明之實施形態加以說明。再者,於 所有圖式中,對相同之構成要素附上相同之符號,並適當省 略說明。 圖13係表示本實施形態中之積層板1〇()e之構成的剖面 圖。本實施㈣+之積層板係制有具備纖維紐層與樹脂 層之複數個預浸體而成,且於上部形成有佈線層或形成有增 層者;並且以於積層方向上,將最接近一個面ιι〇而配置之 第-纖維基材層1〇1之中心線^與鄰接於第一纖維基材層 101之第二纖維基材層101a之中心線A3的距離設為D1, 將最接近另一面111而配置之第三纖維基材層1〇5之中心線 A2與鄰接於第三纖維基材層1〇5之第四纖維基材層1〇53之 中〜線A4的距離設為D2,將該積層板之厚度設為,將 該積層板中之纖維基材層之層數設為n(其中,η為2以上之 整數)時,滿足下述式(1)及(2)之條件中之任一者之方式配置 101113166 〇 201247414 各纖維基材層。 D3/n&lt;Dl (1) D3/n&lt;D2 (2) 又,為了更有效地獲得積層板之防翹曲效果,較佳為以將 積層板之一個面110與第一纖維基材層101之中心線A1的 距離設為D4,將另一面Ul與第三纖維基材層1〇5之中心 線A2的距離設為D5時,滿足下述式(3)及(4)之條件中之任 一者之方式配置各纖維基材層。 D4&lt;D1 (3) D5&lt;D2 (4) 本實施形態中之積層板中所含之纖維基材層之層數n並 無特別限定’只要為2以上即可,較佳為2以上6以下,進 而車λ佳為2以上4以下。若纖維基材層之層數在上述範圍 内,則可獲仔機械強度及生產性之平衡尤其優異,適於薄型 電路基板之積層板。 又’為了更有效地獲得積層板之防迦曲效果,較佳為積層 板中之全錢維基材層相對於積層板之中心線Β1對稱地配 置。 本實施形態中之積層板之厚度較佳為0.025 mm以上0.6 mm以下。更佳為⑽4職以上q 4随以下,進而較佳為 0.06二以上〇.3麵以下,尤佳為〇 〇8匪以上〇 2麵以 厚度在上述_内,則可獲得機械強度及生 101113166 201247414 產性之平衡尤其優異,適於薄型電路基板之 本實施形態中之積層板之面方向之線膨賬係 ::。 °C以上20 PPm/°C以下,較佳為2 ppm^c以上15為]Ppm/ 下,進而較佳為2 PPm/t:以上8 ppm/°Cj;&lt;下。wPpm/°C以 線膨脹係數在上述範圍内,則可更有效地抑制形積層板之 案之電路基板、搭載有半導體元件之半導體封= 高溫度循環可靠性,進何更有效地提高對半導㈣裝進行 二次安裝之情科與母板之溫職環可紐。再者,本實施 形態之線膨脹係數只要無特別限制,則表示耽以上150 t以下之區域巾之_脹倾的平均值。 〈實施形態(A)&gt; 以下’對實施形態(A)加以說明。 於實施形態(A)中,積層板中所含之纖維基材層之層數n 為2。再者,於纖維基材層之層數以2時,第—纖維基材 層101及第四纖維基材層l〇5a,以及第二纖維基材層1〇la 及第二纖維基材層105分別表示同一纖維基材層。因此,下 文僅使用第一纖維基材層101及第三纖維基材層1〇5進行說 明。 (積層板) 首先,對本實施形態中之積層板之構成加以說明。 圖1係表示本實施形態中之積層板1〇〇a之構成的剖面 圖。積層板100a係將具備苐一纖維基材層1 〇 1、第一樹脂 101113166 10 201247414 層102、及第二樹脂㉟l〇3之第一預浸體1〇4與包含第三纖 維基材層105、第二樹脂層1〇6、及第四樹脂層1〇7之第二 預浸體108以於積層方向上將第一纖維基材層1〇1及第三纖 維基材層105配置於外側之方式積層而獲得。 此時,所謂「配置於外側」,係表示如圖!所示,以將第 一纖維基材層ιοί之中心線八丨與第三纖維基材層1〇5之中 心線A2的距離設為D1 ’將積層板之厚度設為D3時,滿足 D3/2&lt;D1之方式配置第一纖維基材㉟1〇1及第三纖維基材 層 105。 又’為了更有效地獲得積層板之防龜曲效果,較佳為以將 積層板之一個面110與第一纖維基材層1〇1之中心線A1的 距離設為D4,將另一面lu與第三纖維基材層1〇5之中心 線A2的距離設為D5時,進而滿足D4&lt;D1及D5&lt;D1之 條件之方式進行配置。 又,為了更有效地獲得積層板之防翹曲效果,較佳為將第 一纖維基材層101及第三纖維基材層1〇5相對於積層板之中 心線B1分別對稱地配置。 如上所述,藉由將纖維基材層配置於積層板之外侧,可使 膨脹應力向積層板之中心移動,藉此可減少積層板之單體之 輕曲。 (積層板之製造方法) 其次’對本實施形態中之積層板1 〇〇a之製造方法加以說 101113166 11 201247414 明。圖2⑷及圖2(b)係表示本實施形態中之積層板之製造步 驟的剖面圖。 首先’準備具備第一纖維基材層101、第-樹脂層102、 及第二樹脂層103之第一預浸體104,與包含第三纖維基材 層⑽、第三樹脂層106、及第四樹脂層贿之第二預浸體 108 〇 再者使用第一樹脂層102之厚度厚於第二樹脂層1〇3 之厚度者,進而,使用第三樹脂層106之厚度厚於第四樹脂 層浙之厚度者。即,第一預浸體104及第二預浸體⑽ 兩者均係於厚度方向上第一纖維基材層及第三纖維基 材層105分別偏於—侧。以下,將如此纖維基材偏於一側之 預浸體稱為麵_浸體。再者,驗體之製造方法如下所 示。 其次,如圖2(a)所示,以於預浸體之積層方向上,將第一 纖維基材層101及第三纖維基材層1〇5配置於外側之方式使 第一預浸體104及第二預浸體108重疊。 此時,所謂「配置於外側」,係表示如圖丨所示,以將第 一纖維基材層101之中心線A1與第三纖維基材層1〇5之中 心線A2的距離設為D1,將積層板之厚度設為D3時,滿足 D3/2 &lt; D1之方式配置第一纖維基材層1 〇 1及第三纖維基材 層 105。 又’為了更有效地獲付積層板之防鍾曲效果,較佳為如圖 101113166 12 201247414 1所示,以將積層板之一個面110與第一纖維基材層1 〇 1之 中心線Α1的距離設為D4,將另一面111與第三纖維基材 層105之中心線Α2的距離設為D5時,進而滿足D4&lt;:D1 及D5&lt;D1之條件之方式進行配置。 又’為了更有效地獲得積層板之防翹曲效果,較佳為如圖 1所示,將第一纖維基材層及第三纖維基材層105相對 於積層板之中心線B1分別對稱地配置。 再者,作為積層方法’並無特別限定,例如可為分批式, 亦可同時連續地供給第一預浸體及第二預浸體,使用真空層 壓裝置、真空加壓裝置等連續地積層。 最後’將以上述方式重疊之第一預浸體1〇4及第二預浸體 108加熱、加壓而成形,藉此獲得如圖2(b)所示之本實施形 態中之積層板100a。 作為進行上述加熱處理之方法’並無特別限定,例如可使 用熱風乾燥裝置、紅外線加熱裝置、加熱棍裝置、平板狀之 熱板加壓裝置等而實施。於使用熱風乾燥裝置或紅外線加熱 裝置之情形時’可於實質上壓力並未作用於上述接合處之情 況下貫施。又,於使用加熱輥裝置或平板狀之熱板加壓裝置 之情形時,可藉由使既定之壓力作用於上述接合處而實施。 進行加熱處理時之溫度並無特別限定,但較佳為設為不會 使所使用之樹脂熔融且不會使樹脂之硬化反應急速進行之 溫度區域。加熱溫度例如較佳為12〇°c以上25〇&lt;&gt;c以下,更 101113166 13 201247414 佳為150¾以上230°C以下。 又,進行加熱處理之時間根據所使用之樹脂之種類等而有 所不同,因此並無特別限定,例如可藉由進行30分鐘以上 180分鐘以下之處理而實施。 又’進行加壓之壓力並無特別限定,例如較佳為0.2 MPa 以上5 MPa以下,更佳為2 MPa以上4 MPa以下。 (預浸體之製造方法) 其次’對構成本實施形態中之積層板100a之預浸體之製 造方法加以說明。 積層板100a中所含之預浸體係使一種或兩種以上之樹脂 組成物含浸於纖維基材中,其後,使之半硬化而獲得的包含 纖維基材層與樹脂層之片狀之材料。此種構造之片狀材料之 介電特性’高溫多濕下之機械、電性連接可靠性等各種特性 優異’而適於電路基板用之積層板之製造,故而較佳。 作為使本實施形態中所使用之樹脂組成物含浸於纖維基 材中之方法,並無特別限定,例如可舉出:使樹脂組成物溶 解於溶劑中而製備樹脂清漆,並將纖維基材浸潰於樹脂清漆 中之方法,藉由各種塗佈機進行塗佈之方法;藉由喷霧進行 喷附之方法;對附有支持基材之樹脂層進行層壓之方法等。 該專之中車乂佳為將纖維基材浸潰於樹脂清漆中之方法。藉 此,可提面樹脂組成物對纖維基材之含浸性。再者,於將纖 維基材浸潰於樹脂清漆中之情形時,可使用通常之含浸塗佈 101113166 14 201247414 設備。 尤其於纖維基材之厚度為〇1 mm以下之情形時,較佳為 自纖維基材之兩面以料之樹脂層進行層壓之方法。藉^、、, 可自由地㈣樹脂組成物對纖維基材之含浸量,可進—步提 局預浸體之成雜。再者,於韻狀之職層進行層壓之情 形時’更佳為使用真空之層壓裝置等。 具體而言’作為製造預浸體之方法,例如可舉出以下方法。 圖3係表不預浸體之製造方法之剖面圖。此處,對預先掣 造載體材料5a、5b ’將該載體材料5a、5b層壓於纖維基^ 11後,將載體膜剝離之方法進行具體說明。 預先製造將第一樹脂組成物塗佈於載體膜上而成之载體 材料5a,及將第二樹脂組成物塗佈於載體膜上而成之栽體 材料5b。繼而,使用真空層壓裝置6〇,於減壓下自纖維基 材之兩面使載體材料5a及5b重疊,視需要利用加熱至使樹 脂組成物熔融之溫度以上之層壓輥61進行接合,而使塗佈 於載體膜上之樹脂組成物含浸於纖維基材u中。藉由於減 壓下進行接合,而即便於纖維基材n之内部或載體材料 5a、5b之樹爿a層與纖維基材11之接合部位中存在非填充部 分,亦可使其為減壓空隙或實質上之真空空隙。 作為此種於減壓下使纖維基材11與载體材料5a、5b接合 之其他裝置,例如可使用真空箱裝置、真空加壓裝置等。 繼而,使纖維基材11與載體材料5a、5b接合後,利用熱 101113166 15 201247414 風乾縣置62以㈣於載體材料 溫度進行加熱處理。藉此,可 &amp;曰&amp;融溫度以上之 所產生之減壓空隙等。作為進行二處=之接合步驟中 可使用紅外線加熱裝置、加_裝^里之其他方法,例如 置等而實施。 '&quot;夏、平板狀之熱板加壓裝 將載體材料5a、5b職於 藉由該方法,可製成使樹脂組絲後,將載體膜剝離。 纖維基材11内藏之預浸體21。°載纖維基材11中且使 之==法’則可製作藉由調節載體材钭… 預浸體厚度,錢纖維基材層於厚度方向上偏於一側之 面進行具體說明 等。以下,一面參照圖17 向包含2個作為模塗佈機之第J塗敷裝置與第2塗敷 裝置lb之塗佈機以通過該2個模塗佈機之間之方式搬送纖 維基材3 ,於其兩面分別對每一單面塗敷樹脂清漆4。第j 塗敷裝置丨a與第2塗敷裝置ib可使用相同之模塗佈機,亦 可使用不同者。又,如圖18所示,第1塗數裝置ia與第2 塗敷裝置lb亦可使用輥塗機。又,塗敷間距L及前端重疊 距離D較佳為如圖17及圖18所示般具有一定距離,但亦 可如圖19所示般不具有一定距離。 101113166 16 201247414 第1塗敷裝置la及第2塗敷裝置lb分別具有塗敷前端部 2 ’各自之塗敷前端部2係細長地形成於纖維基材3之寬度 方向上。並且,第1塗敷裝置la之塗敷前端部即第1塗敷 前端部2a係向纖維基材3之一面突出,第2塗敷裝置lb 之塗敷前端部即第2塗敷前端部2b係向纖維基材3之另一 面突出。藉此,於樹脂清漆4之塗敷時,第1塗敷前端部 2a經由樹脂清漆4與纖維基材3之一面接觸,第2塗敷前 端部2b經由樹脂清漆4與纖維基材3之另一面接觸。 自第卜塗敷裝置la與第2塗敷裝置ib喷出之樹脂清漆4 之每單位時間之喷出量可相同,亦可不同。藉由使樹脂清漆 之每單位時間之噴出量不同,可個別地控制於纖維基材3 面”另面上所塗敷之樹脂清漆4之厚度,可較容易地 進行樹脂層之層厚之調整。 利用乾燥取岐之溫度騎加熱,使經201247414 VI. Description of the Invention: TECHNICAL FIELD The present invention relates to a method of manufacturing a laminated board, a circuit board, a semiconductor package, and a laminated board. [Prior Art] In recent years, as electronic devices have been required to be highly functional and light and thin, circuit boards have become increasingly thinner. A typical circuit board is mainly composed of a laminate in which a plurality of prepregs including a fiber base layer and a resin layer are laminated. The current mainstream of the laminate is, for example, a FCBGA (Flip Chip BaU Grid Array) used in a CPU (Central Processing Unit) for a thickness of about 0.8 mm. In recent years, the thickness of the laminated board has been promoted due to the reduction in the cost of the substrate, such as reduction in component cost and processing cost, and improvement in electrical characteristics. Recently, the thickness of the laminated board has been developed to be about .4_ and further 0.2 mm or less. However, in the case of reducing the thickness of the laminated board, the strength of the laminated board is lowered or the heat (four) is increased by a large laminated board. As a result, the amount of variation in the distortion of the semiconductor package is increased, and the yield of the crack is lowered. ^ ' For example, there are methods described in the following documents. 101113166 λ 201247414 is described in the patent document U 曰 专利 昭 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 24 And distortion. A method for producing a laminated board for a printed circuit which is excellent in warpage or distortion and has excellent dimensional stability is disclosed in Japanese Laid-Open Patent Publication No. Hei-4-259543. Patent Document 2 describes the difference in the number of the vertical and horizontal directions of the glass woven fabric used in the control surface layer, and the longitudinal and transverse tensile strength of the glass nonwoven fabric used in the intermediate layer. Ratio, and achieve the balance between vertical and horizontal directions. It is described in the patent document 3 (Japanese Laid-Open Patent Publication No. 2008-258335) that the warpage of the semiconductor package can be effectively prevented by using a buildup layer in which the fiber base material is biased to one side with respect to the thickness direction. [PRIOR ART DOCUMENT] Patent Document 1: Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. SUMMARY OF THE INVENTION ^ (Problems to be Solved by the Invention) However, as the circuit board is further thinned, the warpage of the laminated board gradually becomes more conspicuous. Further, as the warpage of the laminated board increases, the increase in the warpage of the circuit board and the increase in the warpage of the semiconductor package caused by it gradually become more remarkable. 101113166 5 201247414 The techniques of Patent Documents 1, 2, and 3 are effective in solving the warpage of the laminated board, but as the circuit board is further thinned, it is desired to develop warpage and reduce the laminated board. The present invention has been made in view of the above problems, and an object thereof is to provide a laminated board which is suitable for use as a thin circuit board while reducing warpage. (Means for Solving the Problem) According to the present invention, it is possible to provide a laminated board in which a plurality of prepregs including a fibrous base material layer and a resin layer are laminated, and a wiring layer or a build-up layer is formed on the upper portion. And in the lamination direction, the distance between the center line of the first fiber base material layer disposed closest to one surface and the center line of the second fiber base material layer adjacent to the first fiber base material layer is set to D1, Setting a distance between a center line of the third fiber base material layer disposed closest to the other surface and a center line of the fourth fiber base material layer adjacent to the third fiber base material layer as D2, and setting the thickness of the laminated board In the case of D3, when the number of layers of the fiber base material layer of the laminate is n (where η is an integer of 2 or more), any of the following formulas (1) and (2) is satisfied: D3 /n&lt;Dl (1) D3/n&lt;D2 (2). 101113166 6 201247414 Further, according to the present invention, there can be provided a circuit board comprising the above-described laminated board of the present invention. Furthermore, according to the present invention, there is provided a semiconductor package in which a semiconductor element is mounted on a circuit board of the present invention. Further, according to the present invention, there is provided a method for producing a laminated board in which a plurality of prepregs including a fibrous base material layer and a resin layer are laminated, and a wiring layer or a build-up layer is formed on the upper portion. a method of laminating a sheet; and comprising: the dimensioning of the base material layer in the thickness direction, the first step of preparing a plurality of prepregs comprising the prepreg of the fiber on one side; and the second step of the layering direction The distance between the center line of the center line and the center line of the adjacent line and the center line of the adjacent line is the closest to the surface of the first fiber minus the first fiber-like second fiber substrate ^~~ The fiber base layer four fiber base material layer is disposed closest to the other surface and is disposed on the third fiber base material layer to be D2, and the thickness of the laminated plate is D3, n (where η is When the number of layers of the fiber base material layer of the laminated plate is 2 or more, the above-mentioned plural number satisfies the overlap of the prepreg in the conditions of the following formulas (1) and (2), 101113166 201247414 D3/n&lt;Dl (1) D3/n&lt;D2 (2); and a third step, So that the plurality of shaped prepregs overlap. (Effect of the Invention) According to the present invention, it is possible to provide a laminate for a thin circuit substrate by reducing the distortion of the monthly read stress to the center of the laminate by disposing the fiber substrate layer on the outer side of the laminate. . [Embodiment] Hereinafter, embodiments of the present invention will be described using the drawings. In the drawings, the same components are denoted by the same reference numerals, and the description is omitted as appropriate. Fig. 13 is a cross-sectional view showing the configuration of the laminated board 1 () e in the embodiment. The laminated plate of the fourth embodiment of the present invention is formed by a plurality of prepregs having a fiber layer and a resin layer, and a wiring layer or a build-up layer is formed on the upper portion; and is closest in the lamination direction. The distance between the center line of the first-fiber base material layer 1〇1 disposed on one surface and the center line A3 of the second fiber base material layer 101a adjacent to the first fiber base material layer 101 is set to D1, which will be the most The distance between the center line A2 of the third fiber base material layer 1〇5 disposed close to the other surface 111 and the line A4 of the fourth fiber base material layer 1〇53 adjacent to the third fiber base material layer 1〇5 is set. In the case of D2, the thickness of the laminated plate is such that when the number of layers of the fibrous base material layer in the laminated plate is n (where η is an integer of 2 or more), the following formulas (1) and (2) are satisfied. 101113166 〇201247414 Each fiber substrate layer is configured in any of the conditions. D3/n&lt;Dl (1) D3/n&lt;D2 (2) Further, in order to more effectively obtain the warpage preventing effect of the laminated board, it is preferable to laminate one surface 110 of the laminated board with the first fibrous base material layer 101. When the distance between the center line A1 is D4 and the distance between the other surface U1 and the center line A2 of the third fiber base material layer 1〇5 is D5, the conditions of the following formulas (3) and (4) are satisfied. Each of the fiber base material layers is disposed in any of the ways. D4 &lt; D1 (3) D5 &lt; D2 (4) The number n of the fiber base material layers contained in the laminated plate in the present embodiment is not particularly limited as long as it is 2 or more, preferably 2 or more and 6 or less. Further, the car λ is preferably 2 or more and 4 or less. When the number of layers of the fibrous base material layer is within the above range, the balance between mechanical strength and productivity can be obtained particularly well, and it is suitable for a laminate of a thin circuit substrate. Further, in order to more effectively obtain the effect of preventing the slab of the laminated board, it is preferable that the entire substrate layer in the laminated board is symmetrically arranged with respect to the center line Β1 of the laminated board. The thickness of the laminated plate in the present embodiment is preferably 0.025 mm or more and 0.6 mm or less. More preferably, it is preferably (10) 4 or more and q 4 is as follows, and further preferably 0.06 or more and 〇. 3 or less, particularly preferably 〇〇8 匪 or more 〇 2 faces with a thickness within the above _, then mechanical strength and raw 101113166 are obtained. 201247414 The balance of productivity is particularly excellent, and it is suitable for the line expansion of the surface of the laminated board in this embodiment of the thin circuit board::. Above °C above 20 PPm/°C, preferably 2 ppm^c or more 15 is] Ppm/down, and further preferably 2 PPm/t: above 8 ppm/°Cj; &lt; When wPpm/°C has a coefficient of linear expansion within the above range, it is possible to more effectively suppress the circuit board of the laminated board and the semiconductor package mounted with the semiconductor element = high temperature cycle reliability, and how to more effectively improve the half Guide (4) is installed in the second installation of the affair and the mother board of the warmth of the ring. Further, the linear expansion coefficient of the present embodiment is an average value of the swell of the ridge of 150 t or less as long as it is not particularly limited. <Embodiment (A)&gt; Hereinafter, the embodiment (A) will be described. In the embodiment (A), the number n of layers of the fibrous base material layer contained in the laminated sheet is 2. Furthermore, when the number of layers of the fibrous base material layer is 2, the first fibrous base material layer 101 and the fourth fibrous base material layer 10a, and the second fibrous base material layer 1〇1a and the second fibrous base material layer 105 denotes the same fibrous base material layer, respectively. Therefore, only the first fibrous base material layer 101 and the third fibrous base material layer 1〇5 will be described below. (Laminated Board) First, the configuration of the laminated board in the present embodiment will be described. Fig. 1 is a cross-sectional view showing the configuration of a laminate 1a in the embodiment. The laminate 100a is provided with a first fiber base layer 1 〇1, a first resin 101113166 10 201247414 layer 102, and a first prepreg 1〇4 of the second resin 35l〇3 and a third fiber base material layer 105. The second prepreg 108 of the second resin layer 1〇6 and the fourth resin layer 1〇7 is disposed on the outer side of the first fiber base material layer 1〇1 and the third fiber base material layer 105 in the laminating direction. The way is obtained by layering. At this time, the phrase "disposed on the outside" means that the figure is shown! As shown in the figure, the distance between the center line of the first fiber base layer ιοί and the center line A2 of the third fiber base material layer 1〇5 is D1. When the thickness of the laminate is D3, D3/ is satisfied. The first fibrous base material 351〇1 and the third fibrous base material layer 105 are disposed in a manner of 2 &lt; D1. Further, in order to more effectively obtain the anti-turbine effect of the laminated board, it is preferable to set the distance between one surface 110 of the laminated board and the center line A1 of the first fibrous base material layer 1〇1 to D4, and the other side is When the distance from the center line A2 of the third fiber base material layer 1〇5 is D5, the conditions of D4 &lt; D1 and D5 &lt; D1 are further satisfied. Further, in order to more effectively obtain the effect of preventing warpage of the laminated board, it is preferable that the first fibrous base material layer 101 and the third fibrous base material layer 1〇5 are symmetrically arranged with respect to the center line B1 of the laminated board, respectively. As described above, by disposing the fibrous base material layer on the outer side of the laminated plate, the expansion stress can be moved toward the center of the laminated plate, whereby the single piece of the laminated plate can be reduced. (Manufacturing Method of Laminated Sheet) Next, the manufacturing method of the laminated board 1 〇〇a in the present embodiment will be described. 101113166 11 201247414 Fig. 2 (4) and Fig. 2 (b) are cross-sectional views showing the steps of manufacturing the laminated board in the embodiment. First, the first prepreg 104 having the first fibrous base material layer 101, the first resin layer 102, and the second resin layer 103 is prepared, and the third fibrous base material layer (10), the third resin layer 106, and the first The second prepreg 108 of the resin layer is further used. The thickness of the first resin layer 102 is thicker than the thickness of the second resin layer 1〇3, and further, the thickness of the third resin layer 106 is thicker than the fourth resin. The thickness of the layer of Zhejiang. That is, both the first prepreg 104 and the second prepreg (10) are in the thickness direction, and the first fiber base layer and the third fiber base layer 105 are respectively biased to the side. Hereinafter, the prepreg in which the fiber substrate is biased to one side is referred to as a surface-impregnation body. Furthermore, the manufacturing method of the test body is as follows. Next, as shown in FIG. 2(a), the first prepreg is placed such that the first fibrous base material layer 101 and the third fibrous base material layer 1〇5 are disposed outside in the lamination direction of the prepreg. 104 and the second prepreg 108 overlap. In this case, "distributed outside" means that the distance between the center line A1 of the first fiber base material layer 101 and the center line A2 of the third fiber base material layer 1〇5 is D1 as shown in FIG. When the thickness of the laminated board is D3, the first fibrous base material layer 1〇1 and the third fibrous base material layer 105 are disposed so as to satisfy D3/2 &lt; D1. Moreover, in order to more effectively obtain the anti-bell effect of the laminated board, it is preferably as shown in FIG. 101113166 12 201247414 1 to align the one surface 110 of the laminated board with the center line of the first fibrous base material layer 1 〇1. The distance is set to D4, and when the distance between the other surface 111 and the center line Α2 of the third fiber base material layer 105 is D5, the conditions of D4 &lt;: D1 and D5 &lt; D1 are further satisfied. Further, in order to more effectively obtain the anti-warpage effect of the laminated board, it is preferable that the first fibrous base material layer and the third fibrous base material layer 105 are symmetrically symmetric with respect to the center line B1 of the laminated board, respectively, as shown in FIG. Configuration. In addition, the lamination method is not particularly limited, and for example, it may be a batch type, or the first prepreg and the second prepreg may be continuously supplied at the same time, and continuously used by a vacuum laminating apparatus, a vacuum pressurizing apparatus, or the like. Laminated. Finally, the first prepreg 1〇4 and the second prepreg 108 which are overlapped in the above manner are heated and pressed to form a laminated board 100a according to the present embodiment as shown in Fig. 2(b). . The method of performing the above-described heat treatment is not particularly limited, and can be carried out, for example, by using a hot air drying device, an infrared heating device, a heating stick device, a flat hot plate pressurizing device, or the like. In the case of using a hot air drying device or an infrared heating device, it can be applied in a case where substantially no pressure acts on the joint. Further, in the case of using a heating roll device or a flat hot plate pressurizing device, it can be carried out by applying a predetermined pressure to the joint. The temperature at the time of heat treatment is not particularly limited, but is preferably a temperature region in which the resin to be used is not melted and the curing reaction of the resin is not rapidly performed. The heating temperature is, for example, preferably 12 〇 ° C or more and 25 〇 &lt;&gt; c or less, and more preferably 101113166 13 201247414 is 1503⁄4 or more and 230 ° C or less. Further, the time for performing the heat treatment differs depending on the type of the resin to be used and the like, and is not particularly limited. For example, it can be carried out by a treatment of 30 minutes or longer and 180 minutes or shorter. Further, the pressure for pressurization is not particularly limited, and is, for example, preferably 0.2 MPa or more and 5 MPa or less, more preferably 2 MPa or more and 4 MPa or less. (Manufacturing Method of Prepreg) Next, a method of manufacturing the prepreg constituting the laminated board 100a of the present embodiment will be described. The prepreg system contained in the laminate 100a is one in which one or two or more kinds of resin compositions are impregnated into the fibrous base material, and then the material of the fibrous base material layer and the resin layer obtained by semi-hardening is obtained. . The dielectric material of such a structure is excellent in various characteristics such as mechanical and electrical connection reliability under high temperature and high humidity, and is suitable for the production of a laminate for a circuit board. The method of impregnating the resin composition used in the present embodiment with the fiber base material is not particularly limited, and for example, a resin varnish is prepared by dissolving the resin composition in a solvent, and the fiber base material is immersed. A method of squeezing in a resin varnish, a method of coating by various coaters, a method of spraying by spraying, a method of laminating a resin layer with a supporting substrate, and the like. This special car is a method of immersing a fibrous substrate in a resin varnish. Thereby, the impregnation property of the resin composition to the fibrous substrate can be raised. Further, in the case where the fibrous substrate is immersed in the resin varnish, a usual impregnation coating device 101113166 14 201247414 can be used. Particularly in the case where the thickness of the fibrous substrate is 〇 1 mm or less, it is preferred to laminate the resin layer from both sides of the fibrous substrate. By using ^,,, and (4) the impregnation amount of the resin composition to the fibrous substrate, the impurities of the prepreg can be further improved. Further, in the case of laminating the rhythm layer, it is more preferable to use a vacuum laminating apparatus or the like. Specifically, as a method of producing a prepreg, for example, the following method can be mentioned. Fig. 3 is a cross-sectional view showing a method of manufacturing a prepreg. Here, a method of peeling the carrier film 5a, 5b from the carrier material 5a, 5b to the fiber substrate 11 and peeling off the carrier film will be specifically described. The carrier material 5a obtained by applying the first resin composition onto the carrier film and the carrier material 5b obtained by applying the second resin composition to the carrier film are prepared in advance. Then, the carrier materials 5a and 5b are superposed on both sides of the fiber base material under reduced pressure by using a vacuum laminating apparatus, and if necessary, the laminating rolls 61 heated to a temperature higher than the melting temperature of the resin composition are joined. The resin composition coated on the carrier film is impregnated into the fiber substrate u. By joining under reduced pressure, even if there is an unfilled portion in the interior of the fibrous substrate n or the joint between the layer of the tree a layer of the carrier materials 5a and 5b and the fibrous substrate 11, the pressure can be reduced. Or a substantially vacuum gap. As such another means for joining the fiber base material 11 to the carrier materials 5a, 5b under reduced pressure, for example, a vacuum box device, a vacuum press device, or the like can be used. Then, after the fiber base material 11 is joined to the carrier materials 5a and 5b, heat is applied to the temperature of the carrier material by heat treatment at a temperature of 101101166 15 201247414. Thereby, the decompression voids and the like which are generated above the melting temperature can be &amp; In the joining step of performing the two places, the infrared heating device and the other method of adding the film can be used, for example, and the like. '&quot; Summer, flat hot plate press pack The carrier materials 5a, 5b are operated by this method, and the carrier film can be peeled off after the resin is assembled. The prepreg 21 embedded in the fibrous substrate 11. The carrier fiber substrate 11 can be made to have a == method, and the thickness of the carrier material can be adjusted by adjusting the thickness of the prepreg, and the surface of the carbon fiber base material is biased to one side in the thickness direction. Hereinafter, the fiber substrate 3 is conveyed between the two die coaters by a coater including two J coaters and a second coater 1b as die coaters with reference to FIG. A resin varnish 4 is applied to each of the single sides on both sides thereof. The same coating machine can be used for the jth coating device 丨a and the second coating device ib, and different ones can be used. Moreover, as shown in FIG. 18, a roll coater can also be used for the 1st coating apparatus ia and the 2nd coating apparatus lb. Further, the coating pitch L and the tip overlapping distance D are preferably a certain distance as shown in Figs. 17 and 18, but may not have a certain distance as shown in Fig. 19. 101113166 16 201247414 Each of the first coating device 1a and the second coating device 1b has a coating tip end portion 2', and the coating tip end portion 2 is formed to be elongated in the width direction of the fiber base material 3. In addition, the first coating end portion 2a which is the coating end portion of the first coating device 1a protrudes toward one surface of the fiber base material 3, and the coating end portion of the second coating device 1b is the second coating tip end portion 2b. It protrudes toward the other side of the fibrous base material 3. Thereby, when the resin varnish 4 is applied, the first coating tip end portion 2a is in surface contact with one of the fiber base materials 3 via the resin varnish 4, and the second coating tip end portion 2b is further via the resin varnish 4 and the fiber base material 3 One touch. The amount of discharge per unit time of the resin varnish 4 ejected from the first coating device 1a and the second coating device ib may be the same or different. By varying the amount of discharge per unit time of the resin varnish, the thickness of the resin varnish 4 applied on the other side of the fiber substrate can be individually controlled, and the layer thickness of the resin layer can be easily adjusted. Use the temperature of drying and simmering to ride the heat to make the

之情形時,樹脂清漆 又,於將纖維基材浸潰於樹脂清漆中之情形時, 中所使用之溶劑較佳為對樹脂組成物 二’In the case of the resin varnish, when the fibrous substrate is impregnated into the resin varnish, the solvent used is preferably a resin composition.

101113166 17 201247414 :對稱預浸體之第二樹脂層103及第四樹脂層ι〇7之厚度 通^較佳為1 _以上15,以下,第-樹脂層102及第 三樹脂層106之厚度通常較佳為2 3㈣以上_ _以 下。 此處’所謂樹脂層之厚度,係指自纖維基材層與樹脂層之 界面起至該樹脂層之相反側界面之距離,不包含含浸於纖維 基材層中之樹脂。 又,就使趣曲之控制較容易之觀點而言,非對稱預浸體之 第二樹脂層⑻及第四樹脂層1G7之厚度α與第一樹脂層 1〇2及第三樹脂層1〇6之厚度C1的比(C2/C1)較佳為〇」&lt; C2/C1C0.9之範圍。再者,樹 光興顧靜減n 日層之厚度例如可藉由利用 尤学顯被1¾¾¾察預 &gt;又體之硬化接 芝之剖面而測定。 樹脂清漆之固形份並無特別 a ⑽重量%以下,更佳為50重量=上tt40重量-上 可進-步提高樹脂清漆向纖維^65·重以下。藉此, 脂組成物含浸於纖維基材中,I、之3性。可藉由使樹 上200°C以下料行乾燥而獲得溫度’例如80°C以 繼而,返回至圖1,對構忐士… 7傅戍本貫施㈣中 進行詳細說明。 積Θ板之材枓 (纖維基材層) 作為本實施形態中之用於第—Μ 、哉維基材層101及第二纖 維基材層105之纖維基材,並次第一··紙 “、、特別限定,可舉出:玻璃布 101113166 18 201247414 等玻璃纖維基材;以聚苯并哼唑樹脂纖維,聚醯胺樹脂纖 維、芳香族聚酿胺樹脂纖維、全芳香族聚醯胺樹脂纖維等聚 酿胺系樹脂纖維’聚酯樹脂纖維、芳香族聚酯樹脂纖維、全 芳香知聚酿樹赌纖維等聚酯系樹脂纖維,聚醯亞胺樹脂纖 維’氣樹脂纖維等為主成分所構成之合成纖維基材;以牛皮 紙、棉短絨紙、棉絨與牛皮紙漿之混抄紙等為主成分之紙基 材等有機纖維基材等。該等之中,就強度、吸水率之方面而 έ,尤佳為玻璃布。又,藉由使用玻璃布,可進一步減小積 層板之熱膨脹係數。 作為本實施形態中所使用之玻璃纖維基材,基重(每1 之纖維基材之重量)較佳為4 g/m2以上150 g/m2以下,更佳 為82咖2以上110咖2以下,進而較佳為12 g/m2以上6〇 g/m以下,進而較佳為12 以上% g/爪2以下,尤佳為 12g/m2 以上 24 g/m2 以下。 若基重為上述上限值以下,則纖維基材+之樹脂組成物之 3/又性提间,可抑制股線空隙(strand 或絕緣可靠性之 降低之產生。又,可使利用二氧化碳、紫外線(UV, Μ*)、準分子等之雷射之通孔之形成較容易。又,若 土重為述下限值以上,則可提高玻璃纖維基材或積層板之 強度…。果,操作性提高,或預浸體之製作變得容易 可抑制基板翹曲之減少效果之降低。 5 於上述玻_祕材之巾,難騎賴餘“ 101113166 201247414 C以下之玻璃纖維基材’更佳為3.5 ppm/°C以下之玻璃纖維 基材。藉由使用具有此種線膨脹係數之玻璃纖維基材,可進 一步抑制本實施形態之積層板之翹曲。 進而,本實施形態中所使用之纖維基材之揚式模數較佳為 60 GPa以上100 GPa以下,更佳為65 GPa以上92 GPa以 下,進而較佳為86 GPa以上92 GPa以下。藉由使用具有此 種楊式模數之玻璃纖維基材,例如可有效抑制由半導體安裝 時之回焊熱引起之佈線板之變形,因此電子零件之連接可靠 性進一步提高。 又’本實施形態中所使用之玻璃纖維基材較佳為1 MHz 下之介電常數為3,8以上7.0以下,更佳為3.8以上6.8以 下,進而較佳為3.8以上5.5以下。藉由使用具有此種介電 常數之玻璃纖維基材’可進一步減小積層板之介電常數,而 對使用高速訊號之半導體封裝較適宜。 作為具有如上所述之線膨脹係數、揚式模數及介電常數之 玻璃纖維基材’例如可較佳地使用E玻璃、S玻璃、NE玻 璃、T玻璃、UN玻璃、及石英玻璃等。 積層板100a中之第一纖維基材層1〇1及第三纖維基材層 105係分別使構成第一樹脂層ι〇2及第二樹脂層ι〇3、以及 第三樹脂層106及第四樹脂層107之樹脂組成物含浸於上述 纖維基材中而成之層,通常,纖維基材層之厚度可認為係纖 維基材之厚度。 101113166 20 201247414 以上loo 纖維基材層之厚度並無特別限定,較佳為 進而較佳為 &quot;m以下,更佳為10 # m以上60 v m以下 Π 以上35 以下。藉由使用具有此種厚度之纖維 基材,預浸體製造時之操作性進—步提高,尤餘曲之減少 效果較為顯著。 夕 若纖維基材層之厚度為上述上限值以下,職維基材中之 樹脂組成物之含浸性提高’可抑制股線空隙或絕緣可靠怡之 降低之產生。又,可使利用二氧化碳、uv、準分子等之雷 射之通孔之形成較容易。又,若纖維基材層之厚度為上述下 限值以上’則可提高纖維絲或職體H其結果,操 作性提高’或預浸體之製作變得容易,或可抑制基板麵曲之 減少效果之降低。 纖維基材之使用片數並不限定於一片,亦可將複數片較薄 之纖維基材重4而使用。再者,於將複數片纖維基材重疊而 使用之情形時,只要其合計厚度滿足上述範圍即可。 積層板100a中之第一纖維基材層1〇1及第三纖維基材層 105可相同,亦可不同。 積層板100a具有使樹脂組成物含浸於玻璃纖維基材等纖 維基材中而成之纖維基材層,藉此可獲得低線膨脹係數、高 彈性模數優異且薄型之多層佈線板、於該多層佈線板中搭載 有半導體晶片之半導體封裝中翹曲較少’耐熱性、熱衝擊性 之可靠性優異者。其中,藉由具有使樹脂組成物含浸於玻璃 101113166 21 201247414 纖維基材中而成之纖維基材層 熱膨脹。 ,可達成高強度、低吸水、低 (樹脂組成物) 作為含浸於纖維基材中之樹脂組成物,並益 _ 佳為具有低_脹餘及㈣性減,福 ^錄 優異者。樹脂組成物較佳為含有熱硬化性樹脂。 (熱硬化性樹脂) 俾=:脂’並無特別限定,較佳為具有低線_ 係數及4性模數,㈣衝擊性之可靠性優異者。 又,熱硬化性樹脂之玻_移溫度較佳為⑽。c以上35〇 以下,更佳為·。C以上wc以下。藉由使用具有此種 玻璃轉移溫度之熱硬化性樹脂,可獲得⑼回焊耐熱性進一 步k南之效果。 作為具體之熱硬化㈣脂,例何舉出:絲祕清漆樹 脂、甲酚祕清_脂、魏A祕清漆樹料祕清漆 型齡樹脂’未改質之可溶酴_樹脂(獅leph_lresin), 經桐油、亞麻籽油、難油等改f之油改f可溶祕紛樹脂 等可溶祕型_脂等_脂;雙齡A型環氧樹脂、雙齡F 型環氧樹脂、雙酚S型環氧樹脂、雙酚E型環氧樹脂、雙 紛Μ型環氧樹脂、雙酴p型環氧樹脂、雙紛z型環氧樹脂 等雙酚型環氧樹脂,苯酚酚醛清漆型環氧樹脂、甲酚酚醛清 漆型環氧樹脂等酚醛清漆型環氧樹脂,聯苯型環氧樹脂、聯 101113166 22 201247414 苯芳烷基型環氧樹脂、芳基伸烷基型環氧樹脂、萘型環氧樹 月曰、蒽型環氧樹脂、苯氧基型環氧樹脂、二環戊二稀型環氧 樹脂、降萡婦型環氧樹脂、金剛炫型環氧樹脂、苐型環氧樹 脂等環氧樹脂;脲(urea)樹脂、三聚氰胺樹脂等具有三啡環 之樹脂,不飽和聚酯樹脂、雙馬來醯亞胺樹脂、聚胺基甲酸 酯樹脂、鄰苯二曱酸二烯丙酯樹脂、聚矽氧樹脂、具有苯并 °号°井環之樹脂、氰酸酯樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺 樹脂、笨并環丁烯樹脂等。 可單獨使用該等之中之1種,亦可併用具有不同重量平均 分子量之2種以上,亦可將丨種或2種以上與該等之預聚物 併用。 該等之中,尤佳為氰酸酯樹脂(包含氰酸酯樹脂之預聚 物)。藉由使用氰酸酯樹脂,可減小積層板之熱膨脹係數。 進而’氰酸酯樹脂之電氣特性(低介電常數、低介電損耗正 切)、機械強度等亦優異。 氰酸酯樹脂例如可使用使鹵化氰化合物與酚類反應而成 者,或視需要利用加熱等方法預聚化而成者等。具體而言, 可舉出.酚醛清漆型氰酸酯樹脂、雙酚A型氰酸酯樹脂、 雙酚E型氰酸酯樹脂、四曱基雙酚F型氰酸酯樹脂等雙酚 型氰酸S旨樹脂’利用萘齡芳烧基型多力萘麵與鹵化氮之反 應獲得之氰酸酯樹脂,二環戊二烯型氰酸酯樹脂、聯苯烷基 型氰酸S旨難等。料之巾,較佳為祕清漆型氰酸酿樹 101113166 23 201247414 月曰。猎由使用紛路清漆型氰酸s旨樹脂,而交聯密度增加,财 熱性提高。因此,可提高積層板之阻燃性。 作為其理由,可舉出酴醒·清漆型氰酸酯樹脂於硬化反應後 形成二讲銥。進而,可認為其原因為酚醛清漆型氰酸酯樹脂 於其構造上苯環之比例較高,容易碳化。又,即便於使積層 板之厚度為0.6咖以下之情形時,包含使祕清漆型氛酸 醋樹脂硬化而製作之樹脂狀積層板亦具有優異之剛性。此 種積肢域時之剛性㈣,因此半導體元件絲時之可靠 性亦優異。 # 厂、作為祕清漆型氖酸_脂,例如可使用下述通式(1)所表 [化1] Ό ch2. Λ'0 、〇 (I) 通式(I)所表示之酚、主 π η為任意之整數。H氰酸㈣脂之平均重複單位 更佳為2以上。若 以上 下限並無特別限定,較佳為 酯樹脂之耐熱性提高Υ ^述下限值以上,則酚醛清漆型氰酸 η之上限並無特別制加熱時低量體脫離、揮發。又, 若η為上述上限值^,,較佳為10以下,更佳為7以下。 脂層之成形性降低。則可抑制熔融黏度變高,可抑制樹 101113166 24 201247414 又,作為氰酸酯樹脂,亦可較佳地使用下述通式(II)所表 不之萘酚型氰酸酯樹脂。下述通式(11)所表示之萘酚型氰酸 酉曰樹脂例如為使藉由α_萘酚或点-萘酚等萘酚類與對苯二 曱醇、α,α’·二甲氧基-對二曱苯、羥基_2•丙基)苯 等之反應而獲得之萘酚芳烷基樹脂與氰酸縮合而獲得者。通 式(II)之η較佳為1〇以下。於n為1〇以下之情形時,存在 樹脂黏度不會變高,向纖維基材中之含浸性良好,不會使作 為積層板之性能降低之傾向。又,存在於合成時不易引起分 子内聚合,水洗時之分液性提高,可防止產量之降低之傾向。 [化2]101113166 17 201247414: The thickness of the second resin layer 103 and the fourth resin layer ι7 of the symmetric prepreg is preferably 1 _ or more, and hereinafter, the thickness of the first resin layer 102 and the third resin layer 106 is usually It is preferably 2 3 (four) or more _ _ or less. Here, the thickness of the resin layer means the distance from the interface between the fiber base material layer and the resin layer to the interface on the opposite side of the resin layer, and does not include the resin impregnated in the fiber base material layer. Further, from the viewpoint of facilitating the control of the fun, the thickness α of the second resin layer (8) and the fourth resin layer 1G7 of the asymmetric prepreg and the first resin layer 1〇2 and the third resin layer 1〇 The ratio (C2/C1) of the thickness C1 of 6 is preferably in the range of 〇" &lt; C2/C1C0.9. Furthermore, the thickness of the tree layer can be measured by, for example, using a section of the hardened stalk which is sturdy and sturdy. The solid content of the resin varnish is not particularly a (10)% by weight or less, more preferably 50% by weight = upper tt40 by weight - the resin varnish can be further increased to a fiber weight of 65 or less. Thereby, the fat composition is impregnated into the fibrous base material, and I and the three. The temperature can be obtained by drying the material at 200 ° C or lower, for example, 80 ° C, and then returning to Fig. 1, which will be described in detail in the construction of the gentleman. The material of the slab (fiber base material layer) is used as the fiber base material for the first Μ, 哉 基材 base material layer 101 and the second fiber base material layer 105 in the present embodiment, and the first paper is And particularly limited, glass fiber substrate such as glass cloth 101113166 18 201247414; polybenzoxazole resin fiber, polyamide resin fiber, aromatic polyamine resin fiber, and wholly aromatic polyamide resin Polyurethane resin fiber such as fiber, polyester resin fiber, aromatic polyester resin fiber, polyester resin fiber such as scented fragrant fiber gambling fiber, and polyester resin fiber, gas resin fiber, etc. a synthetic fiber base material; an organic fiber base material such as a paper base material containing kraft paper, cotton linter paper, a mixed paper of cotton velvet and kraft pulp, etc., among which, strength, water absorption rate In particular, it is a glass cloth. Further, by using a glass cloth, the thermal expansion coefficient of the laminated board can be further reduced. As a glass fiber substrate used in the present embodiment, the basis weight (fiber substrate per 1) Weight) preferably 4 g/m2 150 g/m2 or less, more preferably 82 coffee 2 or more, 110 coffee 2 or less, further preferably 12 g/m 2 or more and 6 〇 g/m or less, further preferably 12 or more % g/claw 2 or less, particularly preferably It is 12 g/m2 or more and 24 g/m2 or less. If the basis weight is less than or equal to the above upper limit value, the 3/reparation of the resin composition of the fibrous substrate + can suppress strand voids (strand or insulation reliability) It is also possible to reduce the formation of through-holes using carbon dioxide, ultraviolet rays (UV, Μ*), excimers, etc. Further, if the soil weight is equal to or higher than the lower limit value, the glass fiber can be improved. The strength of the substrate or laminated board... The effect of the operation is improved, or the preparation of the prepreg is easy to suppress the reduction of the warpage of the substrate. 5 In the above-mentioned glass, the towel is difficult to ride. 101113166 201247414 C. The glass fiber substrate below C is more preferably a glass fiber substrate of 3.5 ppm/° C. or less. By using a glass fiber substrate having such a linear expansion coefficient, the laminate of the present embodiment can be further suppressed. Warp. Further, the rising modulus of the fiber substrate used in the embodiment is higher. It is preferably 60 GPa or more and 100 GPa or less, more preferably 65 GPa or more and 92 GPa or less, and further preferably 86 GPa or more and 92 GPa or less. By using a glass fiber substrate having such a Young's modulus, for example, it can be effectively suppressed. The connection reliability of the electronic component is further improved by the deformation of the wiring board caused by the reheating heat during semiconductor mounting. Further, the glass fiber substrate used in the embodiment preferably has a dielectric constant of 3 at 1 MHz. 8 or more and 7.0 or less, more preferably 3.8 or more and 6.8 or less, further preferably 3.8 or more and 5.5 or less. By using a glass fiber substrate having such a dielectric constant, the dielectric constant of the laminated plate can be further reduced, and A semiconductor package using a high speed signal is preferred. As the glass fiber base material having the linear expansion coefficient, the upward modulus, and the dielectric constant as described above, for example, E glass, S glass, NE glass, T glass, UN glass, quartz glass or the like can be preferably used. The first fibrous base material layer 1〇1 and the third fibrous base material layer 105 in the laminated plate 100a are configured to constitute the first resin layer ι2 and the second resin layer ι3, and the third resin layer 106, respectively. The resin composition of the four resin layers 107 is impregnated into the above-mentioned fibrous base material. Generally, the thickness of the fibrous base material layer is considered to be the thickness of the fibrous base material. 101113166 20 201247414 The thickness of the above loo fiber base material layer is not particularly limited, but is preferably more preferably &lt; m or less, more preferably 10 # m or more and 60 v m or less Π 35 or more. By using a fibrous base material having such a thickness, the operability at the time of manufacture of the prepreg is further improved, and the effect of reducing the thickness of the linger is remarkable. In the case where the thickness of the fibrous base material layer is less than or equal to the above upper limit value, the impregnation property of the resin composition in the virgin base material is increased to suppress the occurrence of a decrease in the strand void or the insulation reliability. Further, it is possible to form a via hole using a laser such as carbon dioxide, uv or excimer. In addition, when the thickness of the fiber base material layer is at least the above lower limit value, the result of the fiber filament or the body H can be improved, and the workability can be improved, or the preparation of the prepreg can be easily performed, or the reduction of the surface curvature of the substrate can be suppressed. The effect is reduced. The number of sheets of the fibrous base material used is not limited to one sheet, and a plurality of thin fibrous base materials may be used in a weight of four. In the case where a plurality of fiber base materials are stacked and used, the total thickness may satisfy the above range. The first fibrous base material layer 1〇1 and the third fibrous base material layer 105 in the laminated plate 100a may be the same or different. The laminated board 100a has a fiber base material layer in which a resin composition is impregnated into a fiber base material such as a glass fiber base material, thereby obtaining a multilayer wiring board having a low linear expansion coefficient and a high elastic modulus and being thin. In a semiconductor package in which a semiconductor wafer is mounted on a multilayer wiring board, warpage is less, and reliability of heat resistance and thermal shock resistance is excellent. Among them, the fibrous base material layer obtained by impregnating the resin composition with the glass substrate 101113166 21 201247414 is thermally expanded. It can achieve high strength, low water absorption, low (resin composition) as a resin composition impregnated in the fiber substrate, and it is good to have low _ swell and (four) sex reduction. The resin composition preferably contains a thermosetting resin. (thermosetting resin) 俾=:lipid ′ is not particularly limited, and preferably has a low line coefficient and a four-dimensional modulus, and (iv) excellent reliability in impact properties. Further, the glass-shift temperature of the thermosetting resin is preferably (10). c is above 35〇, more preferably. C or more below wc. By using a thermosetting resin having such a glass transition temperature, the effect of (9) reflow heat resistance further can be obtained. As a specific heat hardening (four) fat, for example: silk secret varnish resin, cresol secret clear _ fat, Wei A secret varnish tree material secret varnish age-type resin 'unmodified soluble 酴 _ resin (lion leph_lresin) , through tung oil, linseed oil, difficult oil, etc. to change the oil to f soluble soluble resin, etc. soluble secret type _ fat _ fat; double age A type epoxy resin, double age F type epoxy resin, double Phenol S type epoxy resin, bisphenol E type epoxy resin, double bismuth type epoxy resin, double 酴p type epoxy resin, double bis-type epoxy resin and other bisphenol type epoxy resin, phenol novolak type Novolac type epoxy resin such as epoxy resin or cresol novolak type epoxy resin, biphenyl type epoxy resin, joint 101113166 22 201247414 phenyl aralkyl type epoxy resin, aryl alkylene type epoxy resin, naphthalene Epoxy resin, bismuth epoxy resin, phenoxy epoxy resin, dicyclopentadiene epoxy resin, epoxy resin, diamond powder, epoxy resin Epoxy resin such as resin; resin with tri-brown ring such as urea (urea) resin or melamine resin, unsaturated polyester resin, double mala Imine resin, polyurethane resin, diallyl phthalate resin, polyoxyn epoxide resin, resin with benzoin ring, cyanate resin, polyimine resin, Polyamidoximine resin, stupid cyclobutene resin, and the like. One of these may be used alone, or two or more kinds having different weight average molecular weights may be used in combination, or two or more kinds may be used in combination with the prepolymers. Among these, a cyanate resin (prepolymer containing a cyanate resin) is particularly preferred. By using a cyanate resin, the coefficient of thermal expansion of the laminate can be reduced. Further, the cyanate resin is excellent in electrical characteristics (low dielectric constant, low dielectric loss tangent), mechanical strength, and the like. The cyanate resin can be obtained by, for example, reacting a halogenated cyanide compound with a phenol, or prepolymerizing it by heating or the like as necessary. Specific examples thereof include bisphenol-type cyanide such as a novolac type cyanate resin, a bisphenol A type cyanate resin, a bisphenol E type cyanate resin, and a tetradecyl bisphenol F type cyanate resin. Acid S is a resin which is obtained by the reaction of a naphthalene-based aromatic polyaniline surface with a halogenated nitrogen, a dicyclopentadiene type cyanate resin, and a biphenylalkyl type cyanate. . The towel of the material is preferably a secret varnish type cyanic acid tree 101113166 23 201247414. Hunting uses a varnish-type cyanate resin, and the crosslink density increases, and the finernity is improved. Therefore, the flame retardancy of the laminated board can be improved. The reason for this is that the awake and varnish-type cyanate resin forms a bismuth after the hardening reaction. Further, it is considered that the reason is that the novolac type cyanate resin has a high ratio of the benzene ring in its structure and is easily carbonized. Further, even when the thickness of the laminated board is 0.6 coffee or less, the resin-like laminated board produced by curing the secret varnish type vinegar resin has excellent rigidity. The rigidity (4) of this type of limb region is excellent in the reliability of the semiconductor component wire. #厂, as a secret varnish type citric acid _lip, for example, the following formula (1) can be used [Chemical Formula 1] Ό ch2. Λ'0, 〇(I) phenol represented by the general formula (I), main π η is an arbitrary integer. The average repeating unit of H cyanate (tetra) is more preferably 2 or more. When the above lower limit is not particularly limited, it is preferred that the heat resistance of the ester resin is increased by more than the lower limit value, and the upper limit of the novolac type cyanic acid η is not desorbed or volatilized at the time of heating. Further, when η is the above upper limit value ^, it is preferably 10 or less, more preferably 7 or less. The formability of the lipid layer is lowered. In addition, it is possible to suppress the melting viscosity and to suppress the tree 101113166 24 201247414 Further, as the cyanate resin, a naphthol type cyanate resin represented by the following formula (II) can be preferably used. The naphthol type cyanic acid hydrazine resin represented by the following formula (11) is, for example, a naphthol such as α-naphthol or a naphthol and a terephthalic acid, α,α'·dimethyl The naphthol aralkyl resin obtained by the reaction of oxy-p-nonylbenzene, hydroxy-2-propyl)benzene or the like is obtained by condensation with cyanic acid. The η of the formula (II) is preferably 1 Å or less. When n is 1 Torr or less, the resin viscosity does not become high, and the impregnation property to the fiber base material is good, and the performance as a laminate is not lowered. Further, it is less likely to cause polymerization in the molecule during the synthesis, and the liquid separation property at the time of washing is improved, and the tendency to lower the yield can be prevented. [Chemical 2]

(式中,R表示氫原子或甲基,η表示1以上之整數) 又,作為氰酸酯樹脂,亦可較佳地使用下述通式(III)所表 示之二環戊二烯型氰酸酯樹脂。下述通式(III)所表示之二環 戊二烯型氰酸酯樹脂較佳為下述通式(III)之η為〇以上8以 下。於η為8以下之情形時,樹脂黏度不會變高,向纖維基 材中之含浸性良好,可防止作為積層板之性能之降低。又, 藉由使用二環戊二烯型氰酸酯樹脂,而低吸濕性、及耐化學 品優異。 [化3] 101113166 25 201247414(In the formula, R represents a hydrogen atom or a methyl group, and η represents an integer of 1 or more.) Further, as the cyanate resin, a dicyclopentadiene type cyan represented by the following formula (III) can be preferably used. Acid ester resin. The dicyclopentadiene type cyanate resin represented by the following formula (III) is preferably such that η of the following formula (III) is 〇 or more and 8 or less. When η is 8 or less, the resin viscosity does not become high, and the impregnation property to the fiber base material is good, and the performance as a laminate can be prevented from being lowered. Further, by using a dicyclopentadiene type cyanate resin, it is excellent in low hygroscopicity and chemical resistance. [化3] 101113166 25 201247414

(III) (n表示0以上8以下之整數) 氰酸酯樹脂之重量平均分子量(Mw)之下限並無特別限 定,較佳為Mw500以上,更佳為Mw6〇〇以上。若Mw為 上述下限值以上’則於製作樹脂層之情形時可抑制黏性之產 生,可抑繼脂層彼此賴時相或產生職之轉印。 又’ Mw之上限並無特別限定,較佳為如4,卿以下,更 佳為漏,_以下。又,若Mw為上述上限值以下則可 抑制反應變快’於製成電路基板之情形時,可抑制產生成形 不良或層間剝離強度降低。 氰酸酯樹脂等之勤例如可利肖GPC(Gel Permeation(III) (n represents an integer of 0 or more and 8 or less) The lower limit of the weight average molecular weight (Mw) of the cyanate resin is not particularly limited, and is preferably Mw of 500 or more, and more preferably Mw of 6 or more. When Mw is at least the above lower limit value, the occurrence of stickiness can be suppressed in the case of producing a resin layer, and the transfer of the fat layer to the time phase or the generation of the target can be suppressed. Further, the upper limit of the Mw is not particularly limited, and is preferably, for example, 4 or less, more preferably leaking, _ or less. Further, when Mw is at most the above upper limit value, the reaction can be suppressed from becoming fast. When the circuit board is formed, it is possible to suppress the occurrence of molding failure or the decrease in interlayer peel strength. Such as cyanate resin, such as GPC (Gel Permeation)

Ch麵at。抑phy)(凝膠渗透層析法,標準物質:聚苯乙稀換 算)測定。 又,氰酸酉旨樹脂可單獨使用1種,亦可併用具有不同Mw 之2種以±亦可將丨種或2種以上與該等之預聚物併用。 樹脂組成物中所含之熱硬化性樹脂之含量只要根據其目 的適當調整即可’並無特別限定,但基於樹脂組成物總體, 較佳為5質量%以上9G f量%以下,更佳為iq質量%以上 8〇質置。/。以下’尤佳為2〇質量%以上5〇質量。/〇以下。若熱 硬化性樹脂之含量為上述下限值以上,則操作性提高,變得 101113166 26 201247414 較容易形成樹脂層。若熱硬化性_之含量為上述上 I數=時樹縣之強度或阻祕提高,❹罐層之線賴 係數降低而積層板之翹曲之減少效果提高。 作為熱硬化性樹脂’除了使用氰_樹脂(尤其是祕清 - β fi酸醋樹脂、萘朌型款酸醋樹脂、二環戊二稀型氛酸醋Ch face at. Phy) (gel permeation chromatography, standard material: polystyrene conversion). Further, the cyanic acid resin may be used singly or in combination of two or more kinds of Mw, or two or more kinds thereof may be used in combination with the prepolymers. The content of the thermosetting resin to be contained in the resin composition is not particularly limited as long as it is appropriately adjusted according to the purpose. However, the total amount of the resin composition is preferably 5% by mass or more and 9 gram% or less, more preferably Iq quality% or more 8 〇 quality. /. The following 'excellent' is 2% by mass or more and 5〇 by mass. /〇The following. When the content of the thermosetting resin is at least the above lower limit value, the workability is improved, and it becomes easier to form a resin layer by 101113166 26 201247414. When the content of the thermosetting property is the above-mentioned I number = the strength or the resistance of the tree is increased, the coefficient of the wire of the can layer is lowered and the effect of reducing the warpage of the laminate is improved. As a thermosetting resin, 'in addition to cyanide-resin (especially secret-β-acid vinegar resin, naphthoquinone-type vinegar resin, dicyclopentadiene-type vinegar

、樹脂)以外,亦可使用或併用環氧樹脂(實質上不含函素J 子)。作為環氧樹脂’例如可舉出:雙紛A型環氧樹脂:、雙 .㈣型環氧_、雙㈣型環氧樹脂、細8型環氧樹脂、 雙齡Μ _氧樹脂、雙針型環氧樹脂、細 脂等雙紛型環氧樹脂,苯_路清漆型環氧樹脂、甲^ ^黍糾二樹脂等祕清漆㈣氧樹脂,聯笨型環氧樹脂, •^本型環氧樹脂’聯苯芳絲型環氧樹脂等芳基伸燒基 %乳树月旨’㈣型環氧樹脂、萘二紛型環氧樹脂、〕官 4官能環氧型萘樹脂、伸萘基_環氧樹脂、聯萘型縣樹 妓型環氧樹脂等萘型環氧樹脂,‘I型環氧樹脂、 本、型%氧樹脂、二環戊二烯型環氧樹脂、降箱烯型環氧 樹脂、金剛烧型環氧樹脂、第型環氧樹脂等。 作為環氧樹脂’可單獨使用該等之中之!種,亦可併用且 有不同重量平均分子量之2種以上,亦可们種或2種以1 與該等之預聚物併用。 該等環氧樹脂之中’尤佳為芳基伸烧基型環氧樹脂。藉 此’可進-步提高吸濕焊錫耐熱性及阻燃性。 101113166 27 201247414 所謂芳基伸烷基型環氧樹 上芳基伸炫基之環氧樹脂。例、日重複單位中具有一個以 聯苯二亞〒基型環氧樹脂等:舉出一甲本型環氧樹月旨、 基型環氧樹脂。聯苯二亞f °〆之中,較佳為聯苯二亞甲 σν)表示。 氧樹脂例如以下述通式 [化4]In addition to the resin, an epoxy resin (substantially free of the element J) may be used or used in combination. Examples of the epoxy resin include a double-type A-type epoxy resin: a double-type (tetra)-type epoxy resin, a double-type epoxy resin, a fine 8-type epoxy resin, a double-aged Μ oxy resin, and a double needle. Epoxy resin, fine grease and other double-type epoxy resin, benzene _ varnish type epoxy resin, A ^ ^ 黍 two resin and other secret varnish (four) oxygen resin, joint stupid epoxy resin, • ^ this ring Oxygen resin 'biphenyl aromatic silk type epoxy resin, etc. aryl extended alkyl group % milk tree month '(4) type epoxy resin, naphthalene diene type epoxy resin, 4th official epoxy type naphthalene resin, naphthyl group_ Epoxy resin, naphthalene type tree-type epoxy resin and other naphthalene type epoxy resin, 'I type epoxy resin, this type, type % oxygen resin, dicyclopentadiene type epoxy resin, lower boxene type ring Oxygen resin, diamond-fired epoxy resin, first-type epoxy resin, and the like. As an epoxy resin, you can use it alone! These may be used in combination of two or more kinds of different weight average molecular weights, and may be used in combination with one or two of them in combination with the prepolymers. Among these epoxy resins, it is particularly preferred to be an aryl-based epoxy resin. By this, the heat resistance and flame retardancy of the moisture-absorbing solder can be improved. 101113166 27 201247414 The so-called arylalkylene type epoxy tree aryl aryl base epoxy resin. In the example, the daily repeating unit has a biphenyl difluorene-based epoxy resin, etc.: a one-type epoxy resin, a base epoxy resin. Among the biphenyl diphenyl f ° , preferably, it is represented by biphenyl dimethylene σν). The oxygen resin is, for example, of the following formula [Chemical Formula 4]

,、0' /Π — ^ UV) 上述通式(IV)所表示之聯_ 重複單位η為任意之整數^ —亞甲基型環氧樹腊之平均 1以上,更佳為2以上。若^下限並無特別限定,較佳為 聯笨二亞甲基型環氧樹脂之妹曰上述下難以上’則可抑制 性,因此操作變得容易 日日化’提153對通用溶劑之溶解 以下,更佳為5以下。若以限並無特別限^較佳為10 動性提高,可&gt;卩制成形不良等之限值町’則樹脂之流 作為上述以外之環氧樹脂 造之_漆型環氧樹脂。籍此,為可進烴構 熱膨脹性。 了進步棱间耐熱性、低 /有縮合㈣香_構造之祕清漆㈣氧樹脂為具有 奈H、稠四笨U、聯伸三苯、及苯料、立他 縮合環芳錢烴構造之祕清漆型環氧樹脂。具有縮合環芳 香族煙構造之祕清漆魏氧樹脂可使複數㈣香環規則 101113166 28 201247414 地排列,因此低熱膨脹性優異。又,由於玻璃轉移溫度亦較 高,故而财熱性優異。進而,由於重複構造之分子量較大, 故而與先前之酚醛清漆型環氧樹脂相比,阻燃性優異,藉由 與氰酸酯樹脂組合,可改善氰酸酯樹脂之弱點之脆弱性。因 此,藉由與氰酸酯樹脂併用使用,進而使玻璃轉移溫度變 高,因此對應於無鉛之安裝可靠性優異。 具有縮合環芳香族烴構造之酚醛清漆型環氧樹脂為由酚 類化合物與甲醛類化合物、及縮合環芳香族烴化合物合成的 使酚醛清漆型酚樹脂環氧化而成者。 酚類化合物並無特別限定,例如可舉出:苯酚、鄰曱酚、 間曱酚、對甲酚等甲酚類,2,3-二甲苯酚、2,4-二曱苯酚、 2,5-二曱苯酚、2,6-二曱苯酚、3,4-二曱苯酚、3,5-二甲苯酚 等二曱苯酚類,2,3,5-三曱基苯酚等三曱基苯酚類,鄰乙基 苯酚、間乙基苯酚、對乙基苯酚等乙基苯酚類,異丙基苯酚、 丁基苯酚、第三丁基苯酚等烷酚類,鄰苯基苯酚、間苯基苯 酚、對苯基苯酚、鄰苯二酚、1,5-二羥基萘、1,6-二羥基萘、 2,7-二羥基萘等萘二酚類,間苯二酚、鄰苯二酚、對苯二酚、 鄰苯三酚、間苯三酚等多元酚類,烷基間苯二酚、烷基鄰苯 二酚、烷基對苯二酚等烷基多元酚類等。該等之中,就成本 方面及提供給分解反應之效果而言,較佳為苯酚。 醛類化合物並無特別限定,例如可舉出:曱醛、三聚曱醛、 三哼烷、乙醛、丙醛、聚曱醛、三氯乙醛、環六亞曱基四胺、 101113166 29 201247414 糠醛、乙二醛、正丁醛、己醛、烯丙醛、苯甲醛、巴豆醛、 丙烯醛、四甲醛、苯乙醛、鄰曱苯曱醛、柳醛、二羥基苯曱 醛、三羥基苯曱醛、4-羥基-3-曱氧基醛三聚甲醛等。 縮合環芳香族烴化合物並無特別限定,例如可舉出:曱氧 基萘、丁氧基萘等萘衍生物,曱氧基蒽等蒽衍生物,甲氧基 菲等菲衍生物,其他稠四苯衍生物,疾衍生物,芘衍生物, 衍生物聯伸三苯、及苯并蒽衍生物等。 具有縮合環芳香族烴構造之酚醛清漆型環氧樹脂並無特 別限定,例如可舉出:曱氧基萘改質鄰曱酚酚醛清漆環氧樹 脂、丁氧基萘改質間曱酚酚醛清漆環氧樹脂、及曱氧基萘改 質酚醛清漆環氧樹脂等。該等之中,較佳為具有下述式(V) 所表示之縮合環芳香族烴構造之酚醛清漆型環氧樹脂。 [化5], 0' / Π - ^ UV) The _ repeating unit η represented by the above formula (IV) is an average of 1 or more, more preferably 2 or more, of an arbitrary integer. When the lower limit is not particularly limited, it is preferably a sister of a bismuth dimethylene type epoxy resin, which is difficult to be used above, so that the operation is easy to be tempered, and 153 is dissolved in a general-purpose solvent. Hereinafter, it is more preferably 5 or less. If the limit is not particularly limited, it is preferably 10 movability, and it is possible to use a resin-like epoxy resin which is made of an epoxy resin other than the above. Thereby, the thermal expansion property of the hydrocarbon can be entered. Improved edge heat resistance, low / condensed (four) fragrant _ structure of the secret varnish (four) oxygen resin is a secret varnish with NaH, thick four stupid U, extended triphenyl, and benzene, Lita condensed ring aromatic hydrocarbon structure Type epoxy resin. The secret varnish Wei oxide resin having a condensed ring aromatic tobacco structure can be arranged in a plurality of (four) fragrance ring rules 101113166 28 201247414, and thus is excellent in low thermal expansion property. Further, since the glass transition temperature is also high, the heat recovery property is excellent. Further, since the molecular weight of the repeating structure is large, the flame retardancy is superior to that of the conventional novolak-type epoxy resin, and the combination with the cyanate resin can improve the vulnerability of the cyanate resin. Therefore, by using the cyanate resin in combination, the glass transition temperature is further increased, so that it is excellent in mounting reliability in connection with lead-free. A novolac type epoxy resin having a condensed ring aromatic hydrocarbon structure is obtained by epoxidizing a novolac type phenol resin synthesized from a phenol compound, a formaldehyde compound, and a condensed cyclic aromatic hydrocarbon compound. The phenolic compound is not particularly limited, and examples thereof include phenol such as phenol, o-nonylphenol, m-nonylphenol, and p-cresol, 2,3-xylenol, 2,4-diphenylphenol, and 2,5. - Diterpene phenol such as dinonylphenol, 2,6-dioxanol, 3,4-dinonylphenol, 3,5-xylenol, and tridecylphenol such as 2,3,5-tridecylphenol Ethylphenol such as o-ethylphenol, m-ethylphenol or p-ethylphenol, alkylphenols such as isopropylphenol, butylphenol and t-butylphenol, o-phenylphenol, m-phenylphenol, Naphthalenediols such as p-phenylphenol, catechol, 1,5-dihydroxynaphthalene, 1,6-dihydroxynaphthalene, 2,7-dihydroxynaphthalene, resorcinol, catechol, Polyphenols such as benzenediol, pyrogallol, and phloroglucinol, alkyl polyphenols such as alkyl resorcinol, alkyl catechol, and alkyl hydroquinone. Among these, phenol is preferred in terms of cost and effect of providing a decomposition reaction. The aldehyde compound is not particularly limited, and examples thereof include furfural, trimeral aldehyde, trioxane, acetaldehyde, propionaldehyde, polyfurfural, trichloroacetaldehyde, and cyclohexamethylenetetramine, 101113166 29 201247414 Furfural, glyoxal, n-butyraldehyde, hexanal, allylaldehyde, benzaldehyde, crotonaldehyde, acrolein, tetraformaldehyde, phenylacetaldehyde, o-quinone furfural, salicylaldehyde, dihydroxybenzaldehyde, three Hydroxybenzaldehyde, 4-hydroxy-3-hydroxyaldehyde acetal, and the like. The condensed ring aromatic hydrocarbon compound is not particularly limited, and examples thereof include a naphthalene derivative such as a nonoxynaphthalene or a butoxynaphthalene, an anthracene derivative such as an anthracene oxime, a phenanthrene derivative such as methoxyphenanthrene, and the like. Tetrabenzene derivatives, disease derivatives, anthraquinone derivatives, derivative triphenylenes, and benzopyrene derivatives. The novolak-type epoxy resin having a condensed ring aromatic hydrocarbon structure is not particularly limited, and examples thereof include a decyloxynaphthalene-modified o-nonphenol novolac epoxy resin, and a butoxynaphthalene-modified decylphenol novolac varnish. Epoxy resin, and decyloxy naphthalene modified novolac epoxy resin. Among these, a novolac type epoxy resin having a condensed ring aromatic hydrocarbon structure represented by the following formula (V) is preferred. [Chemical 5]

(式中,Ar為縮合環芳香族烴基;R可相互相同亦可不同, 為選自氫原子、碳數1以上10以下之烴基或鹵素、苯基、 苄基等芳基、及包含環氧丙基醚之有機基中之基;η、P、及 q為1以上之整數,又,p、q之值於每一重複單位中可相同 亦可不同) [化6] 101113166 30 201247414 &lt;Χ^- (ΑΠ) (Ar2)(wherein Ar is a condensed cyclic aromatic hydrocarbon group; and R may be the same or different from each other, and is a hydrocarbon group selected from a hydrogen atom, a carbon number of 1 or more and 10 or less, or an aryl group such as a halogen, a phenyl group or a benzyl group, and an epoxy group. a group in the organic group of the propyl ether; η, P, and q are integers of 1 or more, and the values of p and q may be the same or different in each repeating unit) [Chem. 6] 101113166 30 201247414 &lt; Χ^- (ΑΠ) (Ar2)

(式(V)中之Ar為式(VI)中之(Arl)〜(Ar4)所表示之構造; 式(VI)中之R可相互相同亦可不同,為選自氫原子、碳數1 以上10以下之烴基或鹵素、苯基、苄基等芳基、及包含環 氧丙基醚之有機基中之基) 進而,作為上述以外之環氧樹脂,較佳為萘酚型環氧樹 脂、萘二酚型環氧樹脂、2官能或4官能環氧型萘樹脂、伸 萘基醚型環氧樹脂等萘型環氧樹脂。藉此,可進一步提高耐 熱性、低熱膨脹性。又,與苯環相比,萘環之7Τ-7Γ堆疊效 果較高,因此低熱膨脹性、低熱收縮性尤其優異。進而,因 多環構造而剛性效果較高,玻璃轉移溫度尤其高,因此回焊 前後之熱收縮變化較小。作為萘紛型環氧樹脂,例如可以下 述通式(VII-1)表示;作為萘二酚型環氧樹脂,可以下述式 (VII-2)表示;作為2官能或4官能環氧型萘樹脂,可以下述 式(VII-3)(VII-4)(VII-5)表示;作為伸萘基醚型環氧樹脂,例 如可以下述通式(VII-6)表示。 [化7](Ar in the formula (V) is a structure represented by (Arl) to (Ar4) in the formula (VI); R in the formula (VI) may be the same or different, and is selected from a hydrogen atom and a carbon number of 1. The above-mentioned 10 or less hydrocarbon group or halogen, aryl group such as phenyl group or benzyl group, and the group in the organic group containing a glycidyl ether) Further, as the epoxy resin other than the above, a naphthol type epoxy resin is preferable. A naphthalene type epoxy resin such as a naphthalene diphenol type epoxy resin, a bifunctional or tetrafunctional epoxy type naphthalene resin, or a naphthyl ether type epoxy resin. Thereby, heat resistance and low thermal expansion property can be further improved. Further, since the 7Τ-7Γ stacking effect of the naphthalene ring is higher than that of the benzene ring, it is particularly excellent in low thermal expansion property and low heat shrinkage property. Further, since the multi-ring structure has a high rigidity effect and the glass transition temperature is particularly high, the heat shrinkage change before and after the reflow is small. The naphthalene type epoxy resin may, for example, be represented by the following formula (VII-1); the naphthalene diphenol type epoxy resin may be represented by the following formula (VII-2); and the bifunctional or tetrafunctional epoxy type may be used. The naphthalene resin can be represented by the following formula (VII-3) (VII-4) (VII-5); and the stannaphthyl ether type epoxy resin can be represented, for example, by the following formula (VII-6). [Chemistry 7]

(η表示平均1以上6以下之數,R表示環氧丙基或碳數1 101113166 31 201247414 以上10以下之烴基) [化8](η represents an average of 1 or more and 6 or less, and R represents a glycidyl group or a hydrocarbon group having a carbon number of 1,101,113,166, 2012, 2012,474, or more and 10 or less).

(VII-6) (式中,R1表示氫原子或曱基;R2分別獨立地表示氫原子、 碳原子數1〜4之烷基、芳烷基、萘基、或含有環氧丙基醚 基之萘基;〇及m分別為0〜2之整數,且〇或m中之任一 者為1以上) 環氧樹脂之含量之下限並無特別限定,於樹脂組成物總體 101113166 32 201247414 中,較佳為1質量。/❶以上,更佳為2質量%以上。若含量為 上述下限值以上,則氰酸g旨樹脂之反應性提高,可提高所碑 知·之製品之耐濕性。環氧樹脂之含量之上限並無特別限定, 較佳為55質量%以下,更佳為4〇質量%以下。若含量為上 述上限值以下,則可進一步提高对熱性。 J辰氧樹脂之重量平均分子量(Mw)之下限並無特別限定, 較佳為Mw500以上,更佳為Mw8〇〇以上。若Mw為上述 下限值以上,則可抑制樹脂層中產生黏性^ Mw之上限並無 特別限定,較佳為Mw20,000以下,更佳為Mwl5,〇〇〇以下。 若Mw為上述上限值以下,則製作預浸體時,向纖維基材中 之含浸性提高,而可獲得更均勻之製品。環氧樹脂之Mw 例如可藉由GPC測定。 於使用氰酸酯樹脂(尤其是酚醛清漆型氰酸酯樹脂、萘酚 型氰酸酯樹脂、二環戊二烯型氰酸酯樹脂)或環氧樹脂(芳基 伸烷基型環氧樹脂、尤其是聯苯二亞曱基型環氧樹脂、具有 鈿合環芳香族烴構造之酚醛清漆型環氧樹脂、萘酚型環氧樹 月曰)作為熱硬化性樹脂之情形時,較佳為進而使用酚樹脂。 作為酚樹脂,例如可舉出:酚醛清漆型酚樹脂、可溶酚醛型 酚樹脂、芳基伸烷基型酚樹脂等。作為酚樹脂,可單獨使用 該等之中之1種,亦可併用具有不同重量平均分子量之2 種以上亦可將1種或2種以上與該等之預聚物併用。該等 之中,尤佳為芳基伸烷基型酚樹脂。藉此,可進一步提高吸 101113166 33 201247414 濕悍錫耐熱性。 作為芳基伸烷基型酚樹脂,例如可舉出 聯苯二亞甲基型酚樹脂等。聯苯二亞甲'^甲笨型酚樹脂、 下述通式(VIII)表示。 土型酚樹脂例如可以 [化 11](VII-6) (wherein R1 represents a hydrogen atom or a fluorenyl group; and R2 each independently represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, an aralkyl group, a naphthyl group, or a glycidyl ether group; The naphthyl group; 〇 and m are each an integer of 0 to 2, and any one of 〇 or m is 1 or more) The lower limit of the content of the epoxy resin is not particularly limited, and in the resin composition overall 101113166 32 201247414, It is preferably 1 mass. /❶ or more, more preferably 2% by mass or more. When the content is at least the above lower limit value, the reactivity of the cyanate g resin is improved, and the moisture resistance of the product to be described can be improved. The upper limit of the content of the epoxy resin is not particularly limited, but is preferably 55% by mass or less, and more preferably 4% by mass or less. When the content is at most the above upper limit, the heat resistance can be further improved. The lower limit of the weight average molecular weight (Mw) of the J-oxygen resin is not particularly limited, and is preferably Mw of 500 or more, and more preferably Mw of 8 or more. When the Mw is at least the above lower limit, the upper limit of the viscosity of the resin layer can be suppressed from being particularly limited, and it is preferably Mw of 20,000 or less, more preferably Mwl5 or less. When Mw is at most the above upper limit value, when the prepreg is produced, the impregnation property to the fiber base material is improved, and a more uniform product can be obtained. The Mw of the epoxy resin can be determined, for example, by GPC. Use cyanate resin (especially novolak type cyanate resin, naphthol type cyanate resin, dicyclopentadiene type cyanate resin) or epoxy resin (aryl extended alkyl type epoxy resin, In particular, in the case of a biphenyl dihydrazinyl type epoxy resin, a novolac type epoxy resin having a fluorene ring aromatic hydrocarbon structure, or a naphthol type epoxy resin, as a thermosetting resin, it is preferably Further, a phenol resin is used. Examples of the phenol resin include a novolac type phenol resin, a resol type phenol resin, and an aryl alkylene type phenol resin. As the phenol resin, one of these may be used alone, or two or more kinds having different weight average molecular weights may be used in combination, or one or two or more kinds may be used in combination with the prepolymers. Among these, an aryl alkyl phenol resin is particularly preferred. Thereby, it is possible to further improve the heat resistance of the wet zinc paste of 101113166 33 201247414. The arylalkylene type phenol resin may, for example, be a biphenyl dimethylene type phenol resin or the like. The biphenyl dimethylene ketone phenol resin is represented by the following formula (VIII). A soil type phenol resin can be, for example, [Chemical 11]

(VIII) 上述通式(VIII)所表示之聯苯二亞甲義” 位η為任意之整數。n之下限並無特別^樹月旨之重複翠 更佳為2以上。若η為上述下限值以上,較佳為1以上, 熱性。又,重複單位η之上限並無特別限提高耐 下,更佳為8以下。若η為上述上限值以下’較佳為12以 之相溶性提高,可提高作業性。 則與其他樹脂 藉由上述氰酸g旨樹脂(尤其是祕清漆型 紛型氛酸二環紅___和 脂、具 基伸燒基型環氧樹脂、尤其是聯苯二亞甲基型環氧樹…一 _合環料_構造之_清漆型環氧職、蔡紛型環氧 祕Μ與芳基伸絲餐樹脂之組合,可控制交聯密度,而 較容易控制反應性。 酚树月曰之含量之下限並無特別限定,於樹脂組成物總體 人較佳為1質量%以上,更佳為5質量%以上。若盼樹脂 a量為上述下限值以上’則可提高耐熱.又,賴脂之 10Π13Ι66 34 201247414 含量之上限並無特別限定,於樹脂組成物總體中較佳為5s 質量%以下,更佳為4〇質量%以下。若酚樹脂之含量為上 述上限值以下’則可提高低熱膨脹之特性。 齡樹脂之重量平均分子量(Mw)之下限並無特別限定,敏 •佳為Mw400以上’尤佳為Mw500以上。若Mw為上述下 '限值以上,則可抑制樹脂層中產生黏性。又,酚樹脂之埘你 之上限並無特別限定’較佳為Mwl 8,000以下,更佳為 Mwl5’000以下。若Mw為上述上限值以下,則預浸體之製 作時,向纖維基材中之含浸性提高,而可獲得更均勻之製 品。酚樹脂之Mw例如可利用Gpc測定。 進而,於使用氰酸g旨樹脂(尤其是祕清漆型氣酸骑樹 脂:萘齡型氰酸_脂、二環戊二稀型氰酸輯脂)、紛樹 脂(方基伸烧基型紛樹脂、尤其是聯苯二亞曱基型紛樹脂)、 及環氧樹脂(芳基伸院基型環氧樹脂、尤其是聯苯二亞甲基 型環氧樹脂、具有縮合環芳香族煙構造之祕清漆型環氧樹 脂、萘_環氧_)之組合製作基板(尤其是電路基板)之情 形時,可獲得尤其優異之尺寸穩定性。 • 〖旨組成物較佳為含有無機填充材。藉此,即便使積 .層板薄型化,亦可料更優異之強度。進而,可進—步提高 積層板之低熱膨脹化。 (無機填充材) 作為無機填充材,例如可舉出:滑石、锻燒黏土、未锻燒 101113166 201247414 =土、雲母_、玻鱗㈣鹽;氧化鈦、氧德、水紹土、二 楚切、炫融二氧化料氧化物;碳酸約、碳酸鎂、水滑石 认鹽’乳氧化铭、氫氧化鎂、氫氧化料氫氧化物;硫 -&amp;、邊鈣、亞硫酸弼等硫酸鹽或亞硫酸鹽;硼酸鋅、偏 -夂鋇爾㉝、細續、棚酸鱗酬鹽;氮她、說化 氮化矽、氮化碳等氮化物;鈦酸锶、鈦酸鋇等鈦酸鹽等。 2作為無機填充材’可單獨使用該等之中之1種,亦可併用 、上°亥等之中,尤佳為二氧化矽,於低熱膨脹性優異 之方面上較佳為熔融二氧化梦。溶融二氧化歡形狀中有破 碎狀及球狀。為了確保無機填紐之高填充化及向纖維基材 中^之含浸性,可採用符合其目的之使用方法,例如為降低樹 脂組成物之熔融黏度而使用球狀二氧化矽等。 無機填充材之平均粒徑之下限並無特別限定,較佳為〇 〇1 以上,更佳為〇1 以上。若無機填充材之粒徑為上 述下限值以上,則可抑制清漆之黏度變高,而可提高製作預 浸體時之作業性。又,平_徑之上限並無特龍定,較佳 為5.0 以下,更佳為2.〇以瓜以下。若無機填充材之粒 徑為上述上限值以下,則可抑制於清漆中填充劑之沈颭等現 象,而可獲得更均勻之樹脂層。又,於内層基板之導體電路 之L/S低於20/20 /zm時,可抑制對佈線間之絕緣性造成麥 響。 &amp; 無機填充材之平均粒徑係例如藉由雷射繞射式粒度分佈 10Π13166 36 201247414 測疋農置(HORIBA製造,LA_秦),以體積基準測定粒子之 粒度分佈’將其中值徑(D5Q)設為平均粒徑。 又,無機填充材並無特別限定,可使用平均粒徑為單分散 之無機填充材’亦可使用平均粒徑為多分散之無機填充材。 進而亦可使用1種或併用2種以上之平均粒徑為單分散及/ 或多分散之無機填充材。 無機填充材較佳為平均粒徑5G _以下之球狀二氧化 石夕,更佳為平均粒徑_,以上2 G _以下之球狀二 _ 错此,可進一步提南無機填充劑之填充性。 無機填充材之含量並無特別限定,基於樹脂組成物總體, 較佳為20重量%以上8〇重量%以下,更佳為3〇重量%以上 75重重%以下。若含量為上述範_,則尤其可成為低熱膨 脹、低吸水。 又,本實施形態中所使用之樹脂組成物亦可調配橡膠成 为,例如可使用橡膠粒子。作為橡膠粒子之較佳之例,可舉 出.核殼型橡膠粒子、交聯㈣腈了二綠橡縣子、交聯笨 乙烯丁二烯橡膠粒子、丙烯酸系橡膠粒子、聚矽氧粒子等。 核殼型橡膠粒子為具有核心層與殼層之橡膠粒子。例如可 舉出外層之殼層由玻璃狀聚合物構成,内層之核心層由橡膠 狀聚合物構成之2層構造;或外層之殼層由_狀聚合物構 成’中間層由橡膠狀聚合物構成,ϋ由玻璃狀聚 成之3層構造者。 ° 101113166 37 201247414 玻璃狀聚合物層例如由曱基丙烯酸曱酯之聚合物等構 成’橡勝狀聚合物層例如由丙稀酸丁 g旨聚合物(丁基橡膠)等 構成。作為核殼型橡膠粒子之具體例’可舉出:Staphyl〇id AC3832、AC3816N(商品名 ’ Ganz Chemical 公司製造)、 MetablenKW-4426(商品名,三菱麗陽公司製造)。作為交聯 丙稀腈丁二婦橡膠(NBR,Acrylonitrile-Butadiene Rubber)粒 子之具體例,可舉出XER-91(平均粒徑0.5 ,JSR公司 製造)等。 作為交聯本乙浠丁一烯橡膠(SBR,Styrene-Butadiene Rubber)粒子之具體例’可舉出XSK_5〇〇(平均粒徑〇 5 &quot; m,JSR公司製造)等。作為丙烯酸系橡膠粒子之具體例,可 舉出Metablen W300A(平均粒徑〇」#m)、W45〇A(平均粒 徑0.2 ym)(三菱麗陽公司製造)等。 聚石夕氧粒子只要為由有機聚;^氧㈣狀橡膠彈性微粒 子,則並無特別限定,例如可舉出由聚$氧橡膠(有機聚石夕 氧烧交聯彈性體)本身所構成之微粒子、及以三維交聯型主 體之聚石夕氧被覆包含二維交聯主體之聚石夕氧之核心部而成 之核殼構造粒子等。作為聚碎氧橡膠微粒子,可使用 KMP-605、KMP-600、ΚΜΡ-597、KMP-594(信越化學公司 製造)、Torayfil E-500、T〇rayfil E_6〇〇(T〇RAY . DOWCORNING公司製造)等市售品。 橡膠粒子之含量並無特別限定,加上上述無機填充材,基 101113166 38 201247414 於樹脂組成物總體,較佳為2〇重量%以上8〇重量%以下, 更佳為30重量%以上75重詈%以丁。婪八曰治— J里里/〇以下。右含置為範圍内,則 尤其可成為低吸水。 、 (其他添加劑) 此外,可視需要於樹脂組成物中適當調配偶合劑、硬化促 進劑、硬化劑、熱塑性樹脂、有機填充材等添加劑。本實施 形態中所使用之樹脂組成物可較佳地以藉由有機溶劑等使 上述成分溶解及/或分散之液狀形態使用。 藉由偶合劑之使用,熱硬化性樹脂與無機填充材之界面之 濕潤性提高,可使樹脂組成物均勻地定著於纖維基材中。因 此,較佳為使用偶合劑,可改良耐熱性,尤其可改良吸濕後 之焊錫耐熱性。 作為偶合劑,只要為通常用作偶合劑者’則可使用,具體 而言’較佳為使用選自環氧矽烷偶合劑、陽離子矽烷偶合 劑、胺基矽烷偶合劑、鈦酸酯系偶合劑及聚矽氧油型偶合劑 中之1種以上之偶合劑。藉此,可提高與無機填充材之界面 之濕潤性,藉此可進一步提高耐熱性。 偶合劑之添加量之下限依存於填充材之比表面積,因此並 無特別限定,相對於填充材100質量份,較佳為〇.〇5質量 份以上,更佳為〇」質量份以上。若偶合劑之含量為上述下 限值以上,可充分地被覆填充材,可提高耐熱性。又,添加 量之上限並無特別限定,較佳為3質量份以下,更佳為2 101113166 39 201247414 質量份以下。若八θ丄 右δ蕙為上述上限值以下,則可抑制 應造 成影響’可抑击丨w 婷曲強度等之降低。 作為硬化促進劑,可使用公知者。例如可舉出:環烧酸辞、 烧酸結、辛酸錫、辛酸始、雙乙醯丙酮録(II)、三乙醯丙 酮鈷(III)等有機金屬鹽;三乙胺、三丁胺、二氮雜雙環[2,2,2] 辛烷等三級胺類;2-苯基-4-甲基咪唑、2_乙基_4_乙基咪唑、 2-苯基·4·乙㈣&lt;、2_苯基_4_甲基领基料、2苯基-4,5_ 二經基料等料類;絲、雙紛A、壬基祕㈣化合物; 乙酸:苯曱^水楊酸、對曱笨顿等有機酸等;钂鹽化合 物等,或其混合物。作為硬化促進 义别,可亦包会螻犛之中之 衍生物在内單獨使用1種,亦可 甲之 用2種以上。 乂含該等之衍生物在内併 可使用下述通式(IX)所表 鏽鹽化合物並無特別限定,例如 示之鑌鹽化合物。 [化 12] 〇X) RJ-P-R* (式中’ P表示填原子,R1、汉2 x u R及R4分別表示經取代 或未經取代之具有芳香環或雜環 有機基、或經取代或未經 取代之脂肪族基’且可相互相同价 、可不同;A-表示分子内具 有至少1個以上之可釋放至分子 卜之質子之n(n^l)價質子 供體之陰離子、或其錯陰離子) 101113166 40 201247414 硬化促進劑之含量並盔牲丨— I…特別限定,較佳為樹脂組成物總體 之0.01重莖%以上5重I。/,、,τ 置里/°以下,更佳為〇·1重量%以上2 重量%以下。若含量為上述 勺丄哒下限值以上,則可充分發揮促進 硬化之效果。若含量為上述卜 勹述上限值以下,則可進一步提高預 浸體之保存性。 本實施H、巾脂組成物亦可進而個苯氧基樹脂、聚 醯亞胺樹脂、聚_釀亞胺樹脂、聚苯_脂、聚醚減脂、 «樹脂、聚⑽樹脂、聚苯乙_料_性樹脂;苯乙 烯-丁二稀共聚合體、苯乙烯.異紅料聚合體等共聚合 體,聚苯乙_熱靠彈性體、輯烴綠塑性彈性體、聚 醯胺系彈性體、聚酿系彈性體等熱塑性彈性體;聚丁二烯、 環氧改質聚丁二烯、丙烯醯基改質聚丁二烯、甲基丙烯醯基 改負^^丁 一稀專二稀系彈性體。 作為苯氧基樹脂,例如可舉出:具有雙紛骨架之苯氧基樹 脂、具有萘m氧基樹脂、具有蒽骨架之笨氧基樹脂、 具有聯苯骨架之苯氣基樹脂等^又,亦可使用具有複數種該 等骨架之構造之苯氧基樹脂。 该等之中,苯氧基樹脂巾較料使料有料骨架及雙紛 s骨架之苯氧基樹脂。藉由聯苯骨架所具有之剛性,可提高 苯氧基樹脂之玻璃轉移溫度,並且藉由雙酚s骨架之存在, 可提高笨氧基樹脂與金屬之密接性。其結果,可實現積層板 之耐熱性之提高,並且於製造電路基板時,可提高佈線層對 101113166 201247414 積層板之密接性。又,苯氧基樹脂中亦較佳為使用具有雙酚 A骨架及雙酚F骨架之苯氧基樹脂。藉此,於電路基板之製 造時,可進一步提高佈線層對積層板之密接性。 又,亦較佳為使用具有下述通式(X)所表示之雙酚苯乙酮 構造之苯氧基樹脂。 [化 13](VIII) The biphenyl dimethyst position η represented by the above formula (VIII) is an arbitrary integer. The lower limit of n is not particularly limited to 2 or more. If η is the above The upper limit of the value is preferably 1 or more, and the heat is further. The upper limit of the repeating unit η is not particularly limited to increase the resistance, and more preferably 8 or less. If η is equal to or less than the above upper limit, it is preferably 12 to be compatible. It can improve the workability. It is the same as other resins by the above-mentioned cyanate resin (especially the secret varnish type succinic acid bicyclo red ___ and fat, with a base-based epoxy resin, especially Benzene dimethylene type epoxy tree... a _ ring material _ structure _ varnish type epoxy, Cai singer epoxy secret and aryl stretch silk meal resin combination, can control crosslink density, and easier The lower limit of the content of the phenolic tree is not particularly limited, and is preferably 1% by mass or more, and more preferably 5% by mass or more, based on the total amount of the resin composition. 'It can improve heat resistance. Also, the upper limit of the content of 10Π13Ι66 34 201247414 of lyophilic fat is not particularly limited. The total weight of the lipid composition is preferably 5 s mass% or less, more preferably 4 〇 mass% or less. If the content of the phenol resin is less than or equal to the above upper limit value, the characteristics of low thermal expansion can be improved. The weight average molecular weight of the aged resin (Mw) The lower limit of the method is not particularly limited, and Min Jia is Mw400 or more, and is preferably Mw500 or more. If Mw is more than the above lower limit, viscosity can be suppressed in the resin layer. It is not particularly limited, and it is preferably Mwl 8,000 or less, more preferably Mwl 5'000 or less. When Mw is at most the above upper limit value, the impregnation property in the fiber base material is improved in the production of the prepreg, and it is obtained. A more uniform product. The Mw of the phenol resin can be measured, for example, by Gpc. Further, the use of cyanate g resin (especially the secret varnish type gas acid riding resin: naphthalene-type cyanate-lipid, dicyclopentadienyl cyanide Acid resin), resin (square-based stretch-type resin, especially biphenyl dithylene-based resin), and epoxy resin (aryl-based epoxy resin, especially biphenyl dimethine Base type epoxy resin, condensed ring aromatic smoke structure When a combination of a varnish-type epoxy resin and a naphthalene-epoxy_) is used to form a substrate (particularly a circuit board), particularly excellent dimensional stability can be obtained. • The composition preferably contains an inorganic filler. In this way, even if the thickness of the laminate is reduced, the strength can be increased. Further, the low thermal expansion of the laminate can be further improved. (Inorganic filler) Examples of the inorganic filler include talc, Calcined clay, uncalcined 101113166 201247414 = soil, mica _, glass scale (four) salt; titanium oxide, oxygen, water, earth, two Chu cut, smelting dioxide oxide; carbonic acid, magnesium carbonate, hydrotalcite Recognize salt 'milk oxide Ming, magnesium hydroxide, hydroxide hydroxide; sulfur-&, side calcium, barium sulfite and other sulfates or sulfites; zinc borate, partial - 夂钡 33, fine, Shed acid scale salt; nitrogen she, said bismuth nitride, carbon nitride and other nitrides; barium titanate, barium titanate and other titanate. (2) As the inorganic filler, one of these may be used alone, or may be used in combination, in the above-mentioned, etc., particularly preferably cerium oxide, and is preferably a melting oxidizing dream in terms of excellent low thermal expansion property. . The shape of the melted oxidized carbofuran is broken and spherical. In order to ensure high filling of the inorganic filler and impregnation into the fibrous substrate, a method suitable for the purpose can be employed, for example, spherical cerium oxide or the like is used to lower the melt viscosity of the resin composition. The lower limit of the average particle diameter of the inorganic filler is not particularly limited, but is preferably 〇1 or more, and more preferably 〇1 or more. When the particle diameter of the inorganic filler is not less than the above lower limit, the viscosity of the varnish can be suppressed from being increased, and the workability in producing the prepreg can be improved. Further, the upper limit of the flat_path is not Tronidine, preferably 5.0 or less, and more preferably 2. When the particle diameter of the inorganic filler is not more than the above upper limit, it is possible to suppress the precipitation of the filler in the varnish, and to obtain a more uniform resin layer. Further, when the L/S of the conductor circuit of the inner substrate is less than 20/20 / zm, the insulation between the wirings can be suppressed from being affected. & The average particle size of the inorganic filler is determined by, for example, the laser diffraction type particle size distribution 10Π13166 36 201247414 疋 疋 ( (made by HORIBA, LA_秦), and the particle size distribution of the particles is determined on a volume basis. D5Q) is set to an average particle diameter. Further, the inorganic filler is not particularly limited, and an inorganic filler having an average particle diameter of monodisperse can be used. An inorganic filler having an average particle diameter of polydisperse can also be used. Further, one type or two or more types of inorganic fillers having an average particle diameter of monodisperse and/or polydisperse may be used. Preferably, the inorganic filler is a spherical spheroidal oxide having an average particle diameter of 5 G _ or less, more preferably an average particle diameter _, and a spherical shape of 2 G _ or less is further substituted for the filling of the inorganic filler. Sex. The content of the inorganic filler is not particularly limited, and is preferably 20% by weight or more and 8% by weight or less based on the total amount of the resin composition, more preferably 3% by weight or more and 5% by weight or less. If the content is in the above range, it is particularly low in thermal expansion and low in water absorption. Further, the resin composition used in the present embodiment may be formulated with a rubber, and for example, rubber particles may be used. Preferable examples of the rubber particles include core-shell type rubber particles, crosslinked (tetra) nitrile, digreen rubber, crosslinked stearky ethylene butadiene rubber particles, acrylic rubber particles, and polyfluorene oxide particles. The core-shell type rubber particles are rubber particles having a core layer and a shell layer. For example, the shell layer of the outer layer is composed of a glassy polymer, the core layer of the inner layer is composed of a rubbery polymer, or the shell layer of the outer layer is composed of a _ polymer. The intermediate layer is composed of a rubbery polymer. , a three-layer structure composed of glass. ° 101113166 37 201247414 The glassy polymer layer is composed of, for example, a polymer of decyl methacrylate or the like. The rubber polymer layer is composed of, for example, acrylic acid butyl polymer (butyl rubber). Specific examples of the core-shell type rubber particles include Staphyl〇id AC3822, AC3816N (trade name: manufactured by Ganz Chemical Co., Ltd.), and Metablen KW-4426 (trade name, manufactured by Mitsubishi Rayon Co., Ltd.). Specific examples of the particles of the crosslinked acrylonitrile-Butadiene rubber (NBR) include XER-91 (average particle diameter 0.5, manufactured by JSR Corporation). Specific examples of the cross-linked SBR (Styrene-Butadiene Rubber) particles include XSK_5〇〇 (average particle diameter & 5 &quot; m, manufactured by JSR Corporation). Specific examples of the acrylic rubber particles include Metablen W300A (average particle diameter 〇" #m), W45 〇 A (average particle diameter 0.2 ym) (manufactured by Mitsubishi Rayon Co., Ltd.), and the like. The poly-stone oxide particles are not particularly limited as long as they are organic-poly(oxygen)-like rubber elastic fine particles, and examples thereof include a poly-oxygen rubber (organic polyoxo-fired crosslinked elastomer). The microparticles and the core-shell structured particles obtained by coating the core portion of the poly-stone of the two-dimensionally crosslinked body with a three-dimensional crosslinked body are coated with a core. As the polyoxyethylene rubber microparticles, KMP-605, KMP-600, ΚΜΡ-597, KMP-594 (manufactured by Shin-Etsu Chemical Co., Ltd.), Torayfil E-500, T〇rayfil E_6〇〇 (T〇RAY. DOWCORNING) can be used. ) and other commercial products. The content of the rubber particles is not particularly limited, and the inorganic filler, the base 101113166 38 201247414, is preferably 2% by weight or more and 8% by weight or less, more preferably 30% by weight or more, based on the total amount of the resin composition. % to D.婪八曰治—Jerry/〇 below. When the right side is set to the range, it is especially low in water absorption. (Other additives) Further, an additive such as a coupling agent, a hardening accelerator, a hardener, a thermoplastic resin, or an organic filler may be appropriately blended in the resin composition as needed. The resin composition used in the present embodiment can be preferably used in a liquid form in which the above components are dissolved and/or dispersed by an organic solvent or the like. By the use of the coupling agent, the wettability of the interface between the thermosetting resin and the inorganic filler is improved, and the resin composition can be uniformly set in the fiber base material. Therefore, it is preferred to use a coupling agent to improve heat resistance, and in particular to improve solder heat resistance after moisture absorption. The coupling agent may be used as long as it is usually used as a coupling agent. Specifically, it is preferably selected from an epoxy decane coupling agent, a cationic decane coupling agent, an amino decane coupling agent, and a titanate coupling agent. And one or more coupling agents of the polyoxygenated oil type coupling agent. Thereby, the wettability with the interface with the inorganic filler can be improved, whereby the heat resistance can be further improved. The lower limit of the amount of the coupling agent to be added is not particularly limited, and is preferably 5% by mass or more, more preferably 〇 by mass or more, based on 100 parts by mass of the filler. When the content of the coupling agent is at least the above lower limit value, the filler can be sufficiently coated to improve heat resistance. Further, the upper limit of the amount of addition is not particularly limited, but is preferably 3 parts by mass or less, more preferably 2 101113166 39 201247414 parts by mass or less. When the eighth θ 右 right δ 蕙 is equal to or less than the above upper limit value, it is possible to suppress the decrease in the strength of the damper dam. As the hardening accelerator, a known one can be used. For example, there may be mentioned an organic metal salt such as a sulphuric acid sulphuric acid, a sulphuric acid sulphate, a succinate, a octanoic acid, a acetoacetone (II), a triethyl sulfonium ketone (III), a triethylamine or a tributylamine. a tertiary amine such as diazabicyclo[2,2,2]octane; 2-phenyl-4-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenyl·4·B (tetra)&lt;lt ; 2_phenyl_4_methyl collar base material, 2 phenyl-4,5_ di-base base material; silk, double A, sulfhydryl (4) compound; acetic acid: benzoquinone ^ salicylic acid , such as organic acids such as benzophenone; guanidinium salts and the like, or a mixture thereof. As a kind of hardening promotion, it can be used alone or in combination with two or more kinds of derivatives. The rust salt compound represented by the following formula (IX), which contains such a derivative, is not particularly limited, and is, for example, a sulfonium salt compound.化X) RJ-PR* (wherein P represents a fill atom, R1, Han 2 xu R and R4 respectively represent a substituted or unsubstituted organic or heterocyclic organic group, or substituted or Unsubstituted aliphatic groups' and may be identical to each other and may be different; A- represents an anion having at least one n(n^l) valence proton donor having a proton released to the molecular group in the molecule, or The wrong anion) 101113166 40 201247414 The content of the hardening accelerator and the helmet is particularly limited, and it is preferably 0.01% by weight of the resin composition as a whole and 5 parts by weight of I. /,,, τ is in the range of /° or less, more preferably 1·1% by weight or more and 2% by weight or less. When the content is at least the above-mentioned lower limit of the scoop, the effect of promoting hardening can be sufficiently exerted. When the content is at most the above upper limit, the preservability of the prepreg can be further improved. In the present embodiment, H and the towel composition may further comprise a phenoxy resin, a polyimine resin, a poly-aniline resin, a polyphenylene-ester, a polyether fat-reducing, «resin, poly(10) resin, polyphenylene _ material _ resin; styrene-butadiene dimer copolymer, styrene. Ion red polymer or other copolymer, polystyrene _ heat by elastomer, hydrocarbon green plastic elastomer, polyamine amine elastomer, Thermoplastic elastomers such as poly-branched elastomers; polybutadiene, epoxy-modified polybutadiene, acryl-based modified polybutadiene, methacrylic ruthenium-based Elastomer. Examples of the phenoxy resin include a phenoxy resin having a double skeleton, a naphthyloxy resin, a strepoxy resin having an anthracene skeleton, and a benzene-based resin having a biphenyl skeleton. A phenoxy resin having a plurality of configurations of the skeletons can also be used. Among these, the phenoxy resin towel is made of a phenolic resin having a material skeleton and a double s skeleton. By virtue of the rigidity of the biphenyl skeleton, the glass transition temperature of the phenoxy resin can be increased, and the adhesion of the epoxy resin to the metal can be improved by the presence of the bisphenol s skeleton. As a result, the heat resistance of the laminated board can be improved, and the adhesion of the wiring layer to the laminated board of 101113166 201247414 can be improved when the circuit board is manufactured. Further, in the phenoxy resin, a phenoxy resin having a bisphenol A skeleton and a bisphenol F skeleton is preferably used. Thereby, in the production of the circuit board, the adhesion of the wiring layer to the laminated board can be further improved. Further, it is also preferred to use a phenoxy resin having a bisphenol acetophenone structure represented by the following formula (X). [Chem. 13]

(式中,K可相互相同亦可不同,為選自氫原子、碳數1 以上10以下之烴基或鹵素中之基,R2為選自氫原子、碳數 1以上10以下之烴基或鹵素中之基,R3為氫原子或碳數1 以上10以下之烴基,m為0以上5以下之整數) 含有雙酚苯乙酮構造之苯氧基樹脂具有大體積構造,因此 溶劑溶解性或與所調配之熱硬化性樹脂成分之相溶性優 異。又,由於可以低粗糙度形成均勻之粗糙面,故而微細佈 線形成性優異。 具有雙酚苯乙酮構造之苯氧基樹脂可利用以觸媒使環氧 樹脂與盼樹脂高分子量化之方法等公知之方法合成。 具有雙酚苯乙酮構造之苯氧基樹脂亦可包含通式(X)之雙 酚苯乙酮構造以外之構造,該構造並無特別限定,可舉出: 雙酚A型、雙酚F型、雙酚S型、聯苯型、苯酚酚醛清漆 101113166 42 201247414 型、甲酚酚醛清漆型之構造等。其中,含有聯苯型之構造者 玻璃轉移溫度較高,故而較佳。 含有雙紛苯乙酮構造之苯氧基樹脂中之通式(X)之雙紛笨 乙酮構造之含量並無特別限定,較佳為5莫耳%以上95莫 .耳%以下,更佳為1〇莫耳%以上莫耳G/。以下,進而較佳 -為15莫耳%以上75莫耳%以下。若含量為上述下限值以 上,則可充分發揮提高耐熱性、耐濕可靠性之效果。又,若 含量為上述上限值以下,則可提高溶劑溶解性。 苯氧基樹脂之重量平均分子量(Mw)並無特別限定,較佳 為Mw5,_以上100,_以下,更佳為1〇 〇〇〇以上7〇 〇〇〇 以下,進而較佳為20,000以上5〇,〇〇〇以下。若Mw為上述 上限值以下,則可提高與其賴脂之相雜或對溶劑之溶解 性。若為上述下限值以上,則成膜性提高,可抑制於用於電 路基板之製造之情形時產生異常。 苯氧基樹脂之含量並無特別限定,較佳為將填充材排除在 外之樹脂組成物之〇.5質量%以上4〇質量%以下,更佳為^ 質量%以上2G質量%以下。若含量為上述下限值以上,則 .可抑制絕緣樹脂層之機械強度之降低或與導體電路之錢敷 .密接性之降低。若為上述上限值以下,則可抑制絕緣層之熱 膨脹係數之增加,可降低耐熱性。 樹脂組成物中亦可視需要添加顏料、染料、消泡劑、調平 劑、紫外線吸收劑、發泡劑、抗氧化劑、難燃劑、離子捕捉 101113166 43 201247414 劑等上述成分以外之添加物。 作為顏料,可舉出:高嶺土、合成氧化鐵紅、鎘黃、鎳鈦 黃、懿黃、含水氧化鉻、氧化鉻、鋁酸鈷、合成群青等無機 顏料;酞菁等多環顏料;偶氮顏料等。 作為染料,可舉出:異吲哚啉酮、異吲哚啉、喹酞酮、二 苯并略喃、二酮吼咯幷啦咯、茈、哌瑞酮、蒽醌、靛藍、号 丼奎丫。定酮、本并σ米哇酮、蒽酮紫(violanthrone)、醜菁、 次甲基偶氮等。 (附有金屬箔之積層板) 其次’對本實施形態中之附有金屬箔之積層板200加以說 明。 本貫施形態中之積層板1〇〇a亦可為如圖4所示之於至少 單面形成有金屬箔201之附有金屬箔之積層板2〇〇。 金屬4之厚度較佳為! _以上18 _以下。更佳為2 以上12 以下。若金屬箔201之厚度為上述範圍 内’則可形成微細圖案,可使積層板薄型化。 作為構成金屬羯2〇1之金屬,例如可舉出:銅及銅系合 金、紹及料、合金、銀及銀系合金、金及金系合金、鋅及辞 系口金錄及錄系合金、锡及錫系合金、鐵及鐵系合金、科 伐口金(Kovar)(商標名)、42她丫、因瓦或超因瓦等 系合金、W或Mr»楚 π ‘ 寻。又’亦可使用附有載體之電解銅箔等。 又亦可於本實施形態中之積層板100a之至少單面積層 101113166 201247414 膜來代替金屬箔201。作為膜,例如可舉出:聚乙烯、聚丙 烯、聚對苯二曱酸乙二酯、聚萘二曱酸乙二酯、聚醯亞胺、 氟系樹脂等。 作為附有金屬箱之積層板200之製造方法,例如如下所 述。於積層兩個預浸體而獲得之積層板之情形時,於所積層 之第一預浸體及第二預浸體之外側之上下兩面或單面重疊 金屬箔,使用貼合機裝置或真空加壓裝置於高真空條件下使 該等接合。或直接於第一預浸體及第二預浸體之外侧之上下 兩面或單面重疊金屬箔。 繼而,利用真空加壓機對重疊有預浸體與金屬箔等者進行 加熱、加壓,或利用乾燥機進行加熱,藉此可獲得積層板。 (附有增層之積層板) 其次,對本實施形態中之附有增層之積層板300加以說 明。 積層板100a亦可如圖5所示般於該積層板之至少一面】10 之上部進而形成包含第五纖維基材層301與樹脂層之增層 303。此處,亦可不包含第五纖維基材層301,但若包含第 五纖維基材層301,則附有增層之積層板300之防翹曲效果 提高。 又,此時,為了更有效地獲得附有增層之積層板300之防 龜曲效果,較佳為如圖6所示,以於積層方向上,將一面 110與第五纖維基材層301之中心線A5之距離設為D6,將 101113166 45 201247414 增層之表面310與第五纖維基材層之中心線A5之距離設為 D7時,滿足D6 &gt; D7之條件之方式積層增層3〇3。 作為增層303之積層方法’並無特別限定,可為與積層板 100a之積層方法相同之方法’亦可為其他方法。 增層303中所使用之材料並無特別限定,可適當使用積層 板100a中所使用之材料,亦可使用其他材料。 又,增層303之製造方法並無特別限定,可為與本實施形 態中之第一預浸體104或第二預浸體1〇8相同之製造方法, 亦可為其他製造方法。 (電路基板) 其次,對本實施形態中之電路基板400加以說明。 積層板100a可用於如圖7所示之電路基板400。作為電 路基板400之製造方法’並無特別限定,例如有如下方法。 於利用上述方法形成之附有金屬箔之積層板200中形成 層間連接用之通孔405,藉由減成法、半加成法等製作佈線 層401。其後’積層任意之增層303,藉由加成法反覆進行 層間連接及電路形成之步驟而製造電路基板400。此處,一 部分或全部增層可包含纖維基材層,亦可不包含。 (附有阻焊層之電路基板) 其次’對本實施形態中之附有阻焊層之電路基板5〇〇加以 說明。 電路基板400亦可如圖8所示般於該電路基板之至少一面 101113166 46 201247414 11 〇(开乂成增層之情形時為增層之表面31 〇)進而形成包含第 六纖維基材層501與樹脂層之阻焊層5〇3。此處,亦可不包 含第六纖維基材層501,但若包含第六纖維基材層5〇1,則 附有阻焊層之電路基板500之防翹曲效果提高。 又,此時,為了更有效地獲得附有阻焊層之電路基板5〇〇 之防翹曲效果,較佳為如圖9所示,以於積層方向上,將一 面11〇(形成增層之情形時為增層之表面310)與第六纖維基 材層501之中心線A6之距離設為D8,將阻焊層之表面51〇 與第六纖維基材層501之中心線人6之距離設為D9時,滿 足D8&gt;D9之條件之方式積層阻焊層5〇3。 作為阻焊層503之積層方法,並無特別限定,可為與本實 施形態中之積層板l〇0a或增層3〇3之積層方法相同之方 法,亦可為其他方法。 阻知層503中所使用之材料並無特別限定,可適當使用本 實施形態中之積層板100a或增層3〇3中所使用之材料,亦 可使用其他材料。 又,阻焊層503之製作方法並無特別限定,可為與本實施 形態中之第一預浸體1〇4、第二預浸體1〇8、或增層3〇3相 同之製作方法,亦可為其他製作方法。 (半導體封裴) 進而’可藉由於本實施形態中之電路基板5〇〇中搭载半導 體元件601 ’而製造如圖1〇所示之半導體封裝6〇〇。本實施 101113166 47 201247414 形態中之半導體封裝600並無特別限定,例如為包含經電路 加工之附有金屬箔之積層板l〇〇a、增層303、阻焊層5〇3、 及半導體元件601者。 作為半導體封裝600之製造方法,並無特別限定,例如有 如下方法。將半導體元件601搭載於具有阻烊層5〇3之經電 路加工之積層板1 〇〇a之上部。此時,使半導體元件6〇 1與 佈線層401於通孔403中利用凸塊603接合。其後,藉由底 部填充劑605進行底填充。如此,可獲得半導體封裝。 如以上所說明,根據本實施形態,可提供一種減少了翹曲 之積層板100a。尤其是,既便於製成厚度較薄之積層板之 情形時,亦可有效抑制翹曲之產生。並且,使用積層板l〇〇a 之電路基板為翹曲、尺寸穩定性等機械特性、成形性優異 者。因此’積層板100a可較佳地用於要求高密度化、高多 層化之印刷佈線板等要求可靠性之用途中。 積層板10〇a於上述電路加工及其後之各製程中亦可減少 麵曲之產生。因此,本實施形態中之半導體封裝600不易產 生翹曲及龜裂,可薄型化。 又’亦可如圖11〜圖16所示般,於第一預浸體104與第 二預浸體108之間積層有具備纖維基材層與樹脂層之複數 個預浸體。 於以下實施形態中,以與實施形態(A)不同之方面為中心 進行說明。 101113166 48 201247414 〈實施形態(B)&gt; 以下,對實施形態(B)加以說明。 於實施形態(B)中,積層板中所含之纖維基材層之層數n 為3。根據本實施形態,可獲得與實施形態(A)相同之效果。 進而,纖維基材層之層數η多於實施形態(A),因此可獲得 更優異之機械強度。 再者’於纖維基材層之層數為3時,第二纖維基材層1〇la 及第四纖維基材層l〇5a表示同一纖維基材層。因此,下文 使用第一纖維基材層101、第二纖維基材層1〇1&amp;及第三纖 維基材層105進行說明。 圖11係表示本實施形態中之積層板100b之構成之剖面 圖。 積層板l〇〇b係依序積層包含第一纖維基材層ι〇1、第一 樹脂層102、及第二樹脂層103之第一預浸體1〇4,包含第 一纖維基材層l〇la、第五樹脂層701、及第六樹脂層7〇2 之第三預浸體703,及包含第三纖維基材層1〇5、第三樹脂 層106、及第四樹脂層107之第二預浸體1〇8而成,進而以 於積層方向上將第一纖維基材層101及第三纖維基材層1〇5 配置於外側之方式進行積層。 此時,所謂「配置於外側」,係表示如圖11所示,以將第 一纖、維基材層101之中心線A1與鄰接於第一纖維基材層 101之第二纖維基材層101a之中心線A3之距離設為Dl, 101113166 49 201247414 將第三纖維基材層105之中心線A2與A3之距離設為D2 時,滿足D3/3&lt;D1及D3/3&lt;D2之條件中之任一者之方式 進行配置。 又,為了更有效地獲得積層板之防翹曲效果,較佳為以進 而滿足D4&lt;D1及D5&lt;D2之條件之方式進行配置。 又,為了更有效地獲得積層板之防翹曲效果’較佳為如 圖 11所示,將第一纖維基材層10丨及第三纖維基材層 對於積層板之中心線B1分別對稱地配置,更佳為進 將第二纖維基材層l〇la配置於積層板之中心線^丨上 (積層板之製造方法) 1〇5相 而滿足 。圖 驟之 對本實施形態中之積層板l〇〇b之製造方法加以說明 12(a)〜圖12(d)係表示本實施形態中之積層板之製造来 剖面圖。 首先,準備包含第一纖維基材層101、第一樹骑層1〇2 及第二樹脂層103之第一預浸體104’包含第二纖維義材層 101a、第五樹脂層701、及第六樹脂層702之第:r &amp; 曰 ^〜頂浸體 703,及包含第三纖維基材層105、第三樹脂層1〇6、 极Bt η 久第四 树如層107之第二預浸體108。 此時’第三預浸體703係以第五樹脂層701及第六樹浐層 之厚度相等,且相對於厚度方向將第二纖維基材層 配置於第三預浸體703之中心線Β2上之方式形成。、3 下, 將使纖維基材配置於預浸體之中心線上之預浸體稱為對, 101113166 201247414 預浸體。對稱預浸體之第五樹脂層及第六樹脂層7〇2 之厚度通常為1 以上1〇〇 Mm以下。 繼而,如圖12(a)所示,以於預浸體之積層方向上,將第 一纖維基材層101及第三纖維基材層105配置於外側之方式 ^ 依序重疊第一預浸體104、第三預浸體703及第二預浸體 、 108。 此時,所謂「配置於外侧」,係表示如圖11所示,以將第 一纖維基材層101之中心線A1與鄰接於第一纖維基材層 101之第二纖維基材層l〇la之中心線A3之距離設為D1, 將第三纖維基材層105之中心線A2與A3之距離設為D2 時,滿足D3/3&lt;D1及D3/3&lt;D2之條件中之任一者之方式 進行配置。 又,為了更有效地獲得積層板之防翹曲效果,較佳為如圖 11所示,以進而滿足D4 &lt; D1及D5 &lt; D2之條件之方式進行 配置。 又,為了更有效地獲得積層板之防翹曲效果,較佳為如圖 11所示,將第一纖維基材層1〇1及第三纖維基材層105相 • 對於積層板之中心線B1對稱地配置,更佳為進而滿足將第 . 二纖維基材層配置於積層板之中心線B1上。 再者,作為積層方法,並無特別限定,例如可使用與實施 形態(A)相同之方法。 最後,將以上述方式重豐之第一預’’文體1 、第三預浸體 101113166 51 201247414 703及第二預浸體108加熱、加壓而成形,藉此獲得如圖12(b) 所示之本實施形態中之積層板l〇〇b。 又,如圖12(c)般使用厚度不同之對稱預浸體,亦可獲得 如圖12(d)所示之本實施形態中之積層板100b2。 再者,本實施形態中之積層板100b及100b2中所使用之 材料並無特別限定,可適當使用實施形態(A)中所使用之材 料,亦可使用其他材料。 又,與實施形態(A)相同,使用本實施形態中之積層板l〇〇b 亦可製作附有金屬箔之積層板、附有增層之積層板、電路基 板、附有阻焊層之積層板、及搭載有半導體元件之半導體封 裝。 &lt;實施形態(C)&gt; 以下,對實施形態(c)加以說明。 於實施形態(C)中,積層板中所含之纖維基材層之層數η 為4。根據本實施形態,可獲得與實施形態(Α)及(Β)相同之 減少翹曲之效果。進而,由於纖維基材層之層數η多於實施 形態(Α)及(Β) ’故而可獲得更優異之機械強度。 圖13係表示本實施形態中之積層板100c之構成之剖面 圖。積層板100c係依序積層包含第一纖維基材層101、第 一樹脂層102、及第二樹脂層103之第一預浸體104 ’包含 第二纖維基材層l〇la、第五樹脂層701、及第六樹脂層702 之第三預浸體703,包含第四纖維基材層i〇5a、第七樹脂層 101113166 52 201247414 801、及第八樹脂層802之第四預浸體803,及包含第三纖 維基材層105、第三樹脂層1〇6、及第四樹脂層1〇7之第二 預浸體108而成,且進而以於積層方向上,將第一纖維基材 層101及第三纖維基材層105配置於外側之方式進行積層。 此時,所謂「配置於外侧」’係表示如圖13所示,以將第 一纖維基材層101之中心線A1與鄰接於第一纖維基材層 101之第二纖維基材層l〇la之中心線A3之距離設為D1, 將第三纖維基材層105之中心線A2與鄰接於第三纖維基材 層105之第四纖維基材層l〇5a之中心線A4之距離設為D2 時,滿足D:3M&lt;D1及D3M&lt;D2之條件中之任一者之方式 進行配置。 又,為了更有效地獲得積層板之防翹曲效果,較佳為、、 两从滿 足D4&lt;D1及D5&lt;D2之條件之方式進行配置。 為了更有效地獲得積層板之防翹曲效果,較佳為如圖 所示,將第一纖維基材層1〇1及第三纖維基材層1〇5相對、 積層板之中心線分別對稱地配置,更佳為進而滿足將/ 二纖維基材層及第四纖維基材層l〇5a相對於積層板之 中心線B1分別對稱地配置。 (積層板之製造方法) 圖 面 對本實施形態中之積層板100c之製造方法加以說明 14〜圖16係表示本實施形態中之積層板之製造方法之气(wherein K may be the same or different from each other, and is a group selected from a hydrogen atom, a hydrocarbon group having 1 or more and 10 or less carbon atoms, or a halogen group; and R2 is a hydrocarbon group selected from a hydrogen atom and a carbon number of 1 or more and 10 or less. R3 is a hydrogen atom or a hydrocarbon group having 1 or more and 10 or less carbon atoms, and m is an integer of 0 or more and 5 or less.) The phenoxy resin having a bisphenol acetophenone structure has a bulk structure, and thus solvent solubility or The prepared thermosetting resin component is excellent in compatibility. Further, since a uniform rough surface can be formed with low roughness, the fine wiring formation property is excellent. The phenoxy resin having a bisphenol acetophenone structure can be synthesized by a known method such as a method in which a catalyst is used to quantify an epoxy resin and a desired resin. The phenoxy resin having a bisphenol acetophenone structure may contain a structure other than the bisphenol acetophenone structure of the formula (X), and the structure is not particularly limited, and examples thereof include bisphenol A type and bisphenol F. Type, bisphenol S type, biphenyl type, phenol novolac varnish 101113166 42 201247414 type, cresol novolak type structure, etc. Among them, a structure containing a biphenyl type is preferred because the glass transition temperature is high. The content of the double acetophenone structure of the formula (X) in the phenoxy resin having a acetophenone structure is not particularly limited, and is preferably 5 mol% or more and 95 mol% or less, more preferably 1 〇 mol% or more Mo G/. Hereinafter, it is further preferably - 15 mol% or more and 75 mol% or less. When the content is at least the above lower limit value, the effect of improving heat resistance and moisture resistance reliability can be sufficiently exhibited. Further, when the content is at most the above upper limit value, solvent solubility can be improved. The weight average molecular weight (Mw) of the phenoxy resin is not particularly limited, but is preferably Mw 5, _ or more and 100 or less, more preferably 1 Å or more and 7 Å or less, and still more preferably 20,000 or more. 5〇, 〇〇〇 below. When Mw is at most the above upper limit value, the solubility with the lyophile or the solubility in the solvent can be improved. When it is at least the above lower limit value, the film formability is improved, and it is possible to suppress an abnormality in the case of use in the manufacture of a circuit board. The content of the phenoxy resin is not particularly limited, and is preferably 5% by mass or more and 4% by mass or less, more preferably 2% by mass or more and 2% by mass or less, based on the resin composition excluding the filler. When the content is at least the above lower limit value, it is possible to suppress a decrease in the mechanical strength of the insulating resin layer or a decrease in the adhesion to the conductor circuit. When the value is at most the above upper limit, the increase in the thermal expansion coefficient of the insulating layer can be suppressed, and the heat resistance can be lowered. Additives other than the above components, such as a pigment, a dye, an antifoaming agent, a leveling agent, a UV absorber, a foaming agent, an antioxidant, a flame retardant, and an ion trap 101113166 43 201247414, may be added to the resin composition. Examples of the pigment include inorganic pigments such as kaolin, synthetic iron oxide red, cadmium yellow, nickel titanium yellow, yttrium yellow, hydrous chromium oxide, chromium oxide, cobalt aluminate, and synthetic ultramarine; polycyclic pigments such as phthalocyanine; and azo Pigments, etc. Examples of the dye include isoindolinone, isoporphyrin, quinophthalone, dibenzopyran, diketopoxime, oxime, piperidone, anthraquinone, indigo, and sulfonium. Hey. Ketone, Benzo sylvestin, violanthrone, ugly phthalocyanine, methine azo, and the like. (Laminated sheet with metal foil) Next, the metal foil-clad laminate 200 in the present embodiment will be described. The laminate 1a in the present embodiment may be a metal foil-clad laminate 2 having a metal foil 201 formed on at least one side as shown in Fig. 4. The thickness of the metal 4 is preferably! _ above 18 _ below. More preferably 2 or more and 12 or less. When the thickness of the metal foil 201 is within the above range, a fine pattern can be formed, and the laminated board can be made thinner. Examples of the metal constituting the metal crucible 2〇1 include copper and a copper alloy, a material, an alloy, a silver and a silver alloy, a gold and a gold alloy, zinc, and a rhodium and a gold alloy. Tin and tin alloys, iron and iron alloys, Kovar (trade name), 42 her, Invar or Super Invar alloys, W or Mr» Chu π '. Further, an electrolytic copper foil with a carrier or the like may be used. Further, in place of the metal foil 201, at least a single-layer layer 101113166 201247414 of the laminated board 100a in the present embodiment may be used. Examples of the film include polyethylene, polypropylene, polyethylene terephthalate, polyethylene naphthalate, polyimide, and fluorine resin. A method of manufacturing the laminated board 200 with a metal case is as follows, for example. In the case of a laminate obtained by laminating two prepregs, the metal foil is superposed on the lower side or the single side of the first prepreg and the second prepreg of the laminated layer, using a laminator device or a vacuum. The pressurizing device engages the joints under high vacuum conditions. Or directly on the outer side of the first prepreg and the second prepreg, the metal foil is overlapped on the lower side or on one side. Then, a laminated plate is obtained by heating and pressurizing a prepreg, a metal foil, or the like by a vacuum press, or by heating with a dryer. (Laminated sheet with build-up layer) Next, the build-up board 300 with the build-up layer in the present embodiment will be described. The laminated board 100a may further form a build-up layer 303 including a fifth fibrous base material layer 301 and a resin layer on the upper portion of at least one side 10 of the laminated board as shown in Fig. 5 . Here, the fifth fibrous base material layer 301 may not be included. However, if the fifth fibrous base material layer 301 is included, the effect of preventing the warpage of the buildup-attached laminate 300 is improved. Further, at this time, in order to more effectively obtain the anti-turbine effect of the build-up board 300 with the build-up layer, it is preferable to form the one side 110 and the fifth fiber base material layer 301 in the lamination direction as shown in FIG. The distance from the center line A5 is set to D6, and when the distance between the surface 310 of the 101113166 45 201247414 layer and the center line A5 of the fifth fiber base layer is D7, the layer 3 is formed in such a manner as to satisfy the condition of D6 &gt; D7. 〇 3. The method of laminating the buildup layer 303 is not particularly limited, and may be the same as the method of laminating the buildup plate 100a. Other methods may be used. The material used in the buildup layer 303 is not particularly limited, and materials used in the laminate 100a may be used as appropriate, and other materials may be used. Further, the method of producing the buildup layer 303 is not particularly limited, and may be the same as the first prepreg 104 or the second prepreg 1〇8 in the present embodiment, and may be another manufacturing method. (Circuit Substrate) Next, the circuit board 400 in the present embodiment will be described. The laminate 100a can be used for the circuit substrate 400 as shown in FIG. The method of manufacturing the circuit board 400 is not particularly limited, and for example, there are the following methods. The via hole 405 for interlayer connection is formed in the metal foil-clad laminate 200 formed by the above method, and the wiring layer 401 is formed by a subtractive method, a semi-additive method, or the like. Thereafter, an optional build-up layer 303 is laminated, and the circuit board 400 is manufactured by repeating the steps of interlayer connection and circuit formation by an additive method. Here, some or all of the build-up layers may or may not comprise a fibrous substrate layer. (Circuit board with solder resist layer) Next, the circuit board 5A with the solder resist layer in the present embodiment will be described. The circuit substrate 400 may also be formed on at least one side of the circuit substrate, as shown in FIG. 8 , 101113166 46 201247414 11 〇 (the surface 31 of the build-up layer when the layer is opened) to form the sixth fiber substrate layer 501. The solder resist layer 5〇3 with the resin layer. Here, the sixth fiber base material layer 501 may not be included. However, if the sixth fiber base material layer 5〇1 is included, the warpage preventing effect of the circuit board 500 with the solder resist layer is improved. Further, at this time, in order to more effectively obtain the warpage preventing effect of the circuit board 5 with the solder resist layer, it is preferable to form a build-up layer in the lamination direction as shown in FIG. In the case where the surface of the layered layer 310) is spaced from the center line A6 of the sixth fiber substrate layer 501, the distance between the surface 51 of the solder resist layer and the center line of the sixth fiber substrate layer 501 is When the distance is set to D9, the solder resist layer 5〇3 is laminated in such a manner that the condition of D8 &gt; D9 is satisfied. The method of laminating the solder resist layer 503 is not particularly limited, and may be the same as the laminating method of the laminated board 10a or the build-up layer 3〇3 in the present embodiment, or may be another method. The material used in the barrier layer 503 is not particularly limited, and materials used in the laminate 100a or the buildup layer 3〇3 of the present embodiment can be suitably used, and other materials can be used. Further, the method for producing the solder resist layer 503 is not particularly limited, and may be the same as the first prepreg 1〇4, the second prepreg 1〇8, or the buildup layer 3〇3 in the present embodiment. It can also be used for other production methods. (Semiconductor Package) Further, the semiconductor package 6' shown in Fig. 1A can be manufactured by mounting the semiconductor element 601' in the circuit board 5A of the present embodiment. The semiconductor package 600 in the form of the present invention is not particularly limited, and is, for example, a laminated board 10a with a metal foil processed by a circuit, a build-up layer 303, a solder resist layer 5〇3, and a semiconductor element 601. By. The method of manufacturing the semiconductor package 600 is not particularly limited, and for example, there are the following methods. The semiconductor element 601 is mounted on the upper portion of the laminated board 1 〇〇a having the barrier layer 5〇3. At this time, the semiconductor element 6?1 and the wiring layer 401 are bonded to each other in the via hole 403 by the bump 603. Thereafter, underfill is performed by the underfill 605. In this way, a semiconductor package can be obtained. As described above, according to the present embodiment, the laminated board 100a with reduced warpage can be provided. In particular, it is also possible to effectively suppress the occurrence of warpage even when it is convenient to form a laminate having a thin thickness. Further, the circuit board using the laminated board 10a is excellent in mechanical properties such as warpage and dimensional stability, and excellent in moldability. Therefore, the laminated board 100a can be preferably used for applications requiring high reliability, high-density printed wiring boards and the like for reliability. The laminated board 10〇a can also reduce the occurrence of facial curvature in the above-mentioned circuit processing and subsequent processes. Therefore, the semiconductor package 600 in the present embodiment is less likely to cause warpage and cracking, and can be made thinner. Further, as shown in Figs. 11 to 16, a plurality of prepregs including a fibrous base material layer and a resin layer may be laminated between the first prepreg 104 and the second prepreg 108. In the following embodiments, the differences from the embodiment (A) will be mainly described. 101113166 48 201247414 <Embodiment (B)> Hereinafter, Embodiment (B) will be described. In the embodiment (B), the number n of layers of the fibrous base material layer contained in the laminated sheet is 3. According to this embodiment, the same effects as those of the embodiment (A) can be obtained. Further, since the number of layers η of the fibrous base material layer is larger than that of the embodiment (A), more excellent mechanical strength can be obtained. Further, when the number of layers in the fibrous base material layer is 3, the second fibrous base material layer 1〇1a and the fourth fibrous base material layer 10a5a represent the same fibrous base material layer. Therefore, the description will be made hereinafter using the first fibrous base material layer 101, the second fibrous base material layer 1〇1 & and the third fibrous base material layer 105. Fig. 11 is a cross-sectional view showing the configuration of a laminated board 100b in the present embodiment. The laminated board l〇〇b is a first prepreg 1〇4 including the first fibrous base material layer ι1, the first resin layer 102, and the second resin layer 103, and includes the first fibrous base material layer. a third prepreg 703 of the first resin layer 701 and the sixth resin layer 7〇2, and a third fiber base material layer 1〇5, a third resin layer 106, and a fourth resin layer 107 The second prepreg 1〇8 is formed, and the first fibrous base material layer 101 and the third fibrous base material layer 1〇5 are laminated on the outer side in the lamination direction. In this case, "disposed on the outer side" means that the center line A1 of the first fiber and the base material layer 101 and the second fiber base material layer 101a adjacent to the first fiber base material layer 101 are as shown in FIG. The distance from the center line A3 is set to D1, 101113166 49 201247414. When the distance between the center line A2 and the A3 of the third fiber base material layer 105 is D2, the conditions satisfying D3/3&lt;D1 and D3/3&lt;D2 are satisfied. Configure it in either way. Further, in order to more effectively obtain the warpage preventing effect of the laminated board, it is preferable to arrange it so as to satisfy the conditions of D4 &lt; D1 and D5 &lt; D2. Moreover, in order to obtain the anti-warpage effect of the laminated board more efficiently, it is preferable that the first fibrous base material layer 10 and the third fibrous base material layer are symmetrically symmetric with respect to the center line B1 of the laminated board, as shown in FIG. In the arrangement, it is more preferable to arrange the second fiber base material layer l〇la on the center line of the laminated plate (manufacturing method of the laminated board). The manufacturing method of the laminated board 10b in this embodiment is shown in FIG. 12 (a) - FIG. 12 (d) is a sectional view which shows the manufacture of the laminated board in this embodiment. First, the first prepreg 104' including the first fiber base layer 101, the first tree riding layer 1〇2, and the second resin layer 103 is prepared to include the second fiber material layer 101a, the fifth resin layer 701, and The sixth resin layer 702 is: r & 顶 〜 top immersion body 703, and includes a third fiber base material layer 105, a third resin layer 〇6, a pole Bt η, a fourth tree such as layer 107 Prepreg 108. At this time, the third prepreg 703 has the same thickness as the fifth resin layer 701 and the sixth tree layer, and the second fiber base layer is disposed on the center line 第三2 of the third prepreg 703 with respect to the thickness direction. The way it is formed. 3, the prepreg which will arrange the fiber substrate on the center line of the prepreg is called, 101113166 201247414 prepreg. The thickness of the fifth resin layer and the sixth resin layer 7〇2 of the symmetrical prepreg is usually 1 or more and 1 〇〇 Mm or less. Then, as shown in FIG. 12(a), the first prepreg is sequentially superposed on the outer side of the prepreg in the lamination direction of the first fibrous base layer 101 and the third fibrous base layer 105. Body 104, third prepreg 703 and second prepreg, 108. In this case, "disposed on the outer side" means that the center line A1 of the first fibrous base material layer 101 and the second fibrous base material layer adjacent to the first fibrous base material layer 101 are as shown in FIG. The distance from the center line A3 of la is set to D1, and when the distance between the center line A2 of the third fiber base material layer 105 and A3 is D2, any of the conditions of D3/3 &lt; D1 and D3/3 &lt; D2 is satisfied. The way to configure. Further, in order to more effectively obtain the warpage preventing effect of the laminated board, it is preferable to arrange as shown in Fig. 11 so as to satisfy the conditions of D4 &lt; D1 and D5 &lt; D2. Further, in order to more effectively obtain the warpage preventing effect of the laminated board, it is preferable to form the first fibrous base material layer 1〇1 and the third fibrous base material layer 105 as shown in Fig. 11 • for the center line of the laminated board B1 is symmetrically arranged, and it is more preferable to arrange the second fiber base material layer on the center line B1 of the laminate. Further, the method of laminating is not particularly limited, and for example, the same method as in the embodiment (A) can be used. Finally, the first pre-sports 1 and the third prepreg 101113166 51 201247414 703 and the second prepreg 108 which are heavy in the above manner are heated and pressed to form, as shown in FIG. 12(b). The laminated board 10b in the present embodiment is shown. Further, as shown in Fig. 12(c), a symmetrical prepreg having a different thickness is used, and the laminated plate 100b2 of the present embodiment as shown in Fig. 12(d) can be obtained. Further, the materials used in the laminates 100b and 100b2 in the present embodiment are not particularly limited, and the materials used in the embodiment (A) can be suitably used, and other materials can be used. Further, in the same manner as in the embodiment (A), the laminated board with the metal foil, the laminated board with the build-up layer, the circuit board, and the solder resist layer can be produced by using the laminated board 10b in the present embodiment. A laminate and a semiconductor package on which semiconductor elements are mounted. &lt;Embodiment (C)&gt; Hereinafter, embodiment (c) will be described. In the embodiment (C), the number of layers η of the fibrous base material layer contained in the laminated sheet is 4. According to this embodiment, the same effect of reducing warpage as in the embodiments (Α) and (Β) can be obtained. Further, since the number of layers η of the fiber base material layer is larger than that of the embodiment (Α) and (Β), more excellent mechanical strength can be obtained. Fig. 13 is a cross-sectional view showing the configuration of a laminated board 100c in the present embodiment. The laminated board 100c sequentially stacks the first prepreg 104' including the first fibrous base material layer 101, the first resin layer 102, and the second resin layer 103, and includes the second fibrous base material layer l〇la, the fifth resin. The third prepreg 703 of the layer 701 and the sixth resin layer 702 includes a fourth fiber base layer i〇5a, a seventh resin layer 101113166 52 201247414 801, and a fourth prepreg 803 of the eighth resin layer 802. And a second prepreg 108 comprising a third fibrous base material layer 105, a third resin layer 1〇6, and a fourth resin layer 1〇7, and further comprising a first fiber base in the lamination direction The material layer 101 and the third fiber base material layer 105 are laminated on the outer side. In this case, the phrase "disposed on the outer side" means that the center line A1 of the first fiber base material layer 101 and the second fiber base material layer adjacent to the first fiber base material layer 101 are formed as shown in FIG. The distance from the center line A3 of la is set to D1, and the distance between the center line A2 of the third fiber base material layer 105 and the center line A4 of the fourth fiber base material layer 10a adjacent to the third fiber base material layer 105 is set. In the case of D2, it is configured such that any of the conditions of D: 3M &lt; D1 and D3M &lt; D2 is satisfied. Further, in order to more effectively obtain the warpage preventing effect of the laminated board, it is preferable that the two are arranged in such a manner as to satisfy the conditions of D4 &lt; D1 and D5 &lt; D2. In order to obtain the anti-warpage effect of the laminated board more effectively, it is preferable that the first fiber base material layer 1〇1 and the third fiber base material layer 1〇5 are opposed to each other, and the center line of the laminated board is respectively symmetric as shown in the figure. More preferably, the second/second fiber base material layer and the fourth fiber base material layer 10a are symmetrically arranged with respect to the center line B1 of the laminated plate. (Manufacturing Method of Laminated Sheet) FIG. 16 is a view showing a method of manufacturing the laminated board of the present embodiment.

101113166 53 201247414 首先’準備包含第一纖維基材層101、第一樹脂層1〇2、 及第一樹脂層103之第一預浸體104 ’包含第二纖維基材層 l〇la、第五樹脂層701、及第六樹脂層7〇2之第三預浸體 7〇3,包含第四纖維基材層1〇5a、第七樹脂層8〇1、及第八 樹脂層802之第四預浸體803,及包含第三纖維基材層1〇5、 第三樹脂層106、及第四樹脂層1〇7之第二預浸體1〇8。 此時,第一預浸體104及第二預浸體108為非對稱預浸 體,第三預浸體703及第四預浸體803為對稱預浸體。 繼而,如圖14(a)所示’以於預浸體之積層方向上,將第 一纖維基材層101及第三纖維基材層105配置於外側之方式 依序重疊第一預浸體104、第三預浸體703、第四預浸體 8〇3、及第二預浸體108。 此時,所謂「配置於外側」,係表示如圖13所示,以將第 一纖維基材層101之中心線A1與鄰接於第一纖維基材層 1 〇 1之第二纖維基材層101 a之中心線A3之距離設為〇 1 將第三纖維基材層105之中心線A2與鄰接於第三纖維美材 層105之第四纖維基材層i〇5a之中心線A4之距離設為 時,滿足D3/4&lt;D1及D3/4&lt;D2之條件中之任一者之方气 進行配置。 又,為了更有效地獲得積層板之防翹曲效果,較佳為如圖 13所示,以滿足D4&lt;D1及D5&lt;D2之條件之方式進行配置。 又’為了更有效地獲得積層板之防翹曲效果,較佳為 圖 ^1113166 54 201247414 13所示’將第一纖維基材層ι〇1及第三纖維基材層ι〇5相 對於積層板之中心線B1分別對稱地配置,更佳為進而滿足 將第二纖維基材層l〇la及第四纖維基材層;[05a相對於積層 板之中心線B1分別對稱地配置。 再者’作為積層方法,並無特別限定,例如可使用與實施 形態(A)或實施形態(B)相同之方法。 最後’將以上述方式重疊之第一預浸體104、第三預浸體 7〇3、第四預浸體803、及第二預浸體1 〇8加熱、加壓而成 形,藉此獲得如圖14(b)所示之本實施形態中之積層板100c。 又’如圖15(a)般積層厚度不同之對稱預浸體,亦可獲得 如圖15(b)之本實施形態中之積層板i〇〇c2。 又’如圖16(a)般積層四個非對稱預浸體,亦可獲得如圖 16(b)之本實施形態中之積層板i00c3。 再者,本實施形態中之積層板l〇〇c、l〇〇c2及100c3中所 使用之材料並無特別限定,可適當使用實施形態(A)或(B) 中所使用之材料,亦可使用其他材料。 又’與實施形態(A)或(B)相同,使用本實施形態中之積層 板100c ’亦可製作附有金屬箔之積層板、附有增層之積層 板、電路基板、附有阻焊層之積層板、及搭載有半導體元件 之半導體封裝。 以上’對本發明之實施形態進行了敍述,但該等為本發明 之例示’亦可採用上述以外之各種構成。例如,於積層板中 101113166 55 201247414 所含之纖維基材層之層數 態 ▼ _ ^ 7]&gt; (A)〜(C),亦可獲得本實施形態中之積層板 〜丨月市日等’依據實施形 (實施例) 以下,藉由實施例及比較例說明本發明,但本發明並不阳 定於該等。再者,於實施例中’份只要無特別規定月 重量份。又,層之厚度係以平均膜厚表示。 於實施例及比較例中,使用以下原料。 環氧樹脂A :聯苯芳絲型_清漆環氧樹脂(日本化藥 公司製造,NC-3000) ' 環氧樹脂B .萘骨架改質甲紛祕清漆型環氧樹脂卿 公司製造,EXA-7320) 環氧樹脂c :萘二酚二環氧丙基醚(DIC公司製造, EPICLON HP-4032D) 環氧樹脂D :萘醚型環氧樹脂(DIC公司製造,Hp_6〇〇〇) 環氧樹脂E :多官能萘型環氧樹脂(DIC公司製造, HP-4750) 氰酸酯樹脂A :酚醛清漆型氰酸酯樹脂(L〇nza Japan公司 製造,PrimasetPT-30) 氰酸S旨樹脂B ·雙盼A型氣酸g旨樹脂(L〇nza Japan公司製 造,Primaset BA230) 氰酸酯樹脂C :通式(II)所表示之對二曱苯改質萘酚芳烷 基型氰酸酯樹脂(萘酚芳烷基型酚樹脂(東都化成公司製 101113166 56 201247414 造’「SN-485」)與氯化氰之反應物) 酚樹脂A ··聯苯二亞甲基型酚樹脂(日本化藥公司製造, GPH-103) 酚樹脂B :萘酚芳烷基型酚樹脂(東都化成公司製造, SN-485) 、雙馬來醯亞胺樹脂A(K-I Chemical Industry公司製造, BMI-70) 苯氧基樹脂A:含有雙酚苯乙酮構造之苯氧基樹脂 (合成例) 於容量1 L之反應容器中添入四曱基聯苯型環氧樹脂 (Japan Epoxy Resins 公司製造「γχ_4000」,環氧當量 185 g/eq)100 g、雙酚苯乙酮80 g、及環己酮70 g進行攪拌而使 之溶解。繼而,滴加50 wt%氯化四甲敍溶液0.4 g,於氮氣 環境下,於180°C下反應5小時。反應結束後,對沈澱物進 行過濾,利用真空乾燥機,於95°C下進行8小時真空乾燥, 而獲得上述通式(X)所表示之重量平均分子量38,000且玻璃 轉移溫度為13(TC之含有雙酚苯乙酮構造之苯氧基樹脂。 . 填充材A :球狀二氧化石夕(Admatechs公司製造’ SO-32R, 平均粒徑1 ym) 填充材B :球狀二氧化矽(Tokuyama公司製造,NSS-5N, 平均粒徑75 nm) 填充材C :氫氧化鋁(昭和電工公司製造,HP-360) 101113166 57 201247414 填充材D :聚矽氧粒子(信越化學工業公司製造, KMP600,平均粒徑5 /zm) 偶合劑A : 7 -環氧丙氧基丙基三曱氧基矽烷(GE Toshiba Silicone 公司製造,A187) 偶合劑B:環氧矽烷(信越化學工業公司製造,KBM-403E) 硬化觸媒A :符合上述通式(IX)之鏽鹽化合物之磷系觸媒 (SUMITOMO BAKELITE 公司製造,C05-MB) 硬化觸媒B :雙氰胺 著色劑A :酞菁藍/苯并咪唑酮/甲基乙基酮(=1/1/8)混合 物:(山陽色素公司製造) (實施例) 使用以下程序製作本實施形態中之積層板。 首先,對預浸體之製造加以說明。將所使用之樹脂清漆之 組成不於表1,將所獲得之預浸體1〜15所具有之各層之厚 度示於表2。再者,表2〜4中記载之pi〜pis係表示預浸 體1預/叉體15,表2中記載之Unitika係表示unitika Glass101113166 53 201247414 First, 'preparing the first prepreg 104' including the first fibrous base material layer 101, the first resin layer 1〇2, and the first resin layer 103 to include the second fibrous base material layer l〇la, fifth The resin layer 701 and the third prepreg 7〇3 of the sixth resin layer 7〇2 include the fourth fiber base material layer 1〇5a, the seventh resin layer 8〇1, and the fourth resin layer 802. The prepreg 803 and the second prepreg 1〇8 including the third fibrous base material layer 1〇5, the third resin layer 106, and the fourth resin layer 1〇7. At this time, the first prepreg 104 and the second prepreg 108 are asymmetric prepregs, and the third prepreg 703 and the fourth prepreg 803 are symmetric prepregs. Then, as shown in FIG. 14( a ), the first prepreg is sequentially superposed in such a manner that the first fibrous base material layer 101 and the third fibrous base material layer 105 are disposed on the outer side in the lamination direction of the prepreg. 104. A third prepreg 703, a fourth prepreg 8〇3, and a second prepreg 108. In this case, "disposed on the outer side" means that the center line A1 of the first fibrous base material layer 101 and the second fibrous base material layer adjacent to the first fibrous base material layer 1 〇1 are as shown in FIG. The distance from the center line A3 of 101 a is set to 〇1. The distance between the center line A2 of the third fiber base material layer 105 and the center line A4 of the fourth fiber base material layer i〇5a adjacent to the third fiber material layer 105 When it is set, the conditions of any of the conditions of D3/4&lt;D1 and D3/4&lt;D2 are satisfied. Further, in order to more effectively obtain the warpage preventing effect of the laminated board, it is preferable to arrange as shown in Fig. 13 so as to satisfy the conditions of D4 &lt; D1 and D5 &lt; D2. Moreover, in order to obtain the anti-warpage effect of the laminated board more effectively, it is preferable to display the first fibrous base material layer ι〇1 and the third fiber base material layer ι〇5 with respect to the laminated layer as shown in Fig. 11113166 54 201247414 13 The center line B1 of the plates is symmetrically arranged, and it is more preferable to satisfy the second fiber base material layer 10a and the fourth fiber base material layer; [05a is symmetrically arranged with respect to the center line B1 of the laminated board. Further, the method of laminating is not particularly limited, and for example, the same method as in the embodiment (A) or the embodiment (B) can be used. Finally, the first prepreg 104, the third prepreg 7〇3, the fourth prepreg 803, and the second prepreg 1〇8 which are overlapped in the above manner are formed by heating and pressurizing, thereby obtaining The laminated board 100c in this embodiment shown in Fig. 14 (b). Further, as shown in Fig. 15 (a), a symmetrical prepreg having different thicknesses can be obtained, and the laminated board i 〇〇 c2 in the embodiment of Fig. 15 (b) can also be obtained. Further, as shown in Fig. 16 (a), four asymmetrical prepregs are laminated, and the laminated plate i00c3 in the present embodiment as shown in Fig. 16 (b) can also be obtained. Further, the materials used in the laminates 10c, 10c, and 100c3 in the present embodiment are not particularly limited, and the materials used in the embodiment (A) or (B) can be suitably used. Other materials can be used. In the same manner as in the embodiment (A) or (B), the laminated board 100c' of the present embodiment can be used to form a laminated board with a metal foil, a laminated board with a build-up layer, a circuit board, and a solder resist. A laminate of layers and a semiconductor package on which semiconductor elements are mounted. The embodiments of the present invention have been described above, but these are examples of the present invention. Various configurations other than the above may be employed. For example, in the laminated board, the number of layers of the fibrous base material layer contained in 101113166 55 201247414 is ▼__7]&gt; (A) to (C), and the laminated board in the present embodiment can also be obtained. The present invention will be described by way of examples and comparative examples, but the present invention is not intended to be limited thereto. Further, in the examples, the parts are not particularly specified in parts by weight. Further, the thickness of the layer is expressed by the average film thickness. In the examples and comparative examples, the following raw materials were used. Epoxy Resin A: Biphenyl aryl silk type _ varnish epoxy resin (manufactured by Nippon Kayaku Co., Ltd., NC-3000) 'Epoxy resin B. Naphthalene skeleton modified A secret lacquer type epoxy resin company, EXA- 7320) Epoxy resin c: naphthalene diphenol diepoxypropyl ether (manufactured by DIC, EPICLON HP-4032D) Epoxy resin D: naphthalene ether type epoxy resin (manufactured by DIC Corporation, Hp_6〇〇〇) Epoxy resin E: Polyfunctional naphthalene type epoxy resin (manufactured by DIC Corporation, HP-4750) Cyanate resin A: Novolak type cyanate resin (manufactured by L〇nza Japan Co., Ltd., Primaset PT-30) Cyanate S resin B · Double-awaiting type A gas-acid resin (manufactured by L〇nza Japan Co., Ltd., Primaset BA230) Cyanate resin C: p-terephthalene modified naphthol aralkyl type cyanate resin represented by the formula (II) (naphthol aralkyl type phenol resin (produced by Dongdu Chemical Co., Ltd. 101113166 56 201247414 "SN-485") and cyanogen chloride) Phenolic resin A ··Biphenyl dimethylene phenol resin (Japan) Manufactured by a pharmaceutical company, GPH-103) Phenol Resin B: Naphthol aralkyl type phenol resin (manufactured by Dongdu Chemical Co., Ltd., SN-485), Bismaleimide Resin A (Manufactured by KI Chemical Industry Co., Ltd., BMI-70) Phenoxy Resin A: Phenoxy resin containing bisphenol acetophenone structure (synthesis example) Tetrakilyl biphenyl type ring is added to a reaction container of 1 L capacity Oxygen resin ("γχ_4000" manufactured by Japan Epoxy Resins Co., Ltd., epoxy equivalent 185 g/eq) 100 g, bisphenol acetophenone 80 g, and cyclohexanone 70 g were stirred and dissolved. Then, 0.4 g of a 50 wt% tetramethylsulfate solution was added dropwise, and the mixture was reacted at 180 ° C for 5 hours under a nitrogen atmosphere. After completion of the reaction, the precipitate was filtered, and vacuum-dried at 95 ° C for 8 hours using a vacuum dryer to obtain a weight average molecular weight of 38,000 represented by the above formula (X) and a glass transition temperature of 13 (TC). A phenoxy resin containing a bisphenol acetophenone structure. Filler A: Spherical silica dioxide (made by Admatechs Inc. 'SO-32R, average particle size 1 ym) Filler B: Spherical cerium oxide (Tokuyama) Manufactured by the company, NSS-5N, average particle size 75 nm) Filler C: Aluminum hydroxide (manufactured by Showa Denko, HP-360) 101113166 57 201247414 Filler D: Polysiloxane particles (manufactured by Shin-Etsu Chemical Co., Ltd., KMP600, Average particle size 5 /zm) Coupler A: 7-glycidoxypropyltrimethoxy decane (GE Toshiba Silicone, A187) Coupler B: Epoxy decane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM- 403E) Hardening catalyst A: Phosphorus-based catalyst of the rust salt compound of the above formula (IX) (manufactured by SUMITOMO BAKELITE Co., Ltd., C05-MB) Hardening catalyst B: dicyandiamide coloring agent A: phthalocyanine blue/benzene Mixture of imidazolone/methyl ethyl ketone (=1/1/8): (Shanyang pigment (Production) (Example) The laminate of the present embodiment was produced by the following procedure. First, the production of the prepreg will be described. The composition of the resin varnish used is not in Table 1, and the obtained prepreg is obtained. The thickness of each layer of 1 to 15 is shown in Table 2. In addition, the pi~pis shown in Tables 2 to 4 indicates the prepreg 1 pre-fork body 15, and the Unitika system shown in Table 2 indicates unitika Glass.

Fiber股份有限公司,日東纺係表示日東紡股份有限公司。 再者,預浸體1〜8係非對稱預浸體,預浸體9〜15係對稱 預浸體。 ’ (預浸體1) 1.樹脂組成物之清漆Α之製備 使作為環氧樹脂A之聯苯芳絲型祕清漆環氧樹脂(日 101113166 58 201247414 本化藥公司製造,NC-3000) 11.0重量份、作為盼樹脂A之 聯苯二亞曱基迆酚樹脂(日本化藥公司製造,GPH-103)8.8 重量份、作為氮酸酯樹脂A之酚醛清漆型氰酸酯樹脂(Lonza Japan公司製造’ Primaset PT-30)16.0重量份、作為氰酸酯 樹脂Β之雙酚Α型氰酸酯樹脂(Lonza Japan公司製造, Primaset BA230)4.0重量份溶解、分散於甲基乙基酮中。進 而,添加作為填充材A之球狀二氧化矽(Admatechs公司製 造’ SO-32R,平均粒徑1 “111)60.0重量份與作為偶合劑a 之7 -環氧丙氧基丙基三曱氧基石夕烧(GE Toshiba Silicone公 司製造’ A187)0.2重量份’使用高速擾拌裝置授拌3〇分鐘, 並以不揮發分成為50重量%之方式進行調整而製備樹脂組 成物之清漆A(樹脂清漆A)。 2.載體材料之製造 使用模塗佈機裝置將樹脂清漆A以乾燥後之樹脂層之厚 度成為13.0 之方式塗敷於pET膜(聚對苯二曱酸乙二 醋(polyethylene terephthalate) ’杜邦帝人薄膜公司製造之 Purex Film ’厚度36㈣)上,將其於⑽。。之乾燥裝置中 乾燥5分鐘·,㈣得第—樹脂層用之财PET膜之樹脂片 A(載體材料A)。 、相同之方式將上述樹脂清漆A塗敷於PET膜上, 以乾燥後之樹腊層之厚度成為7 G # m之方式,於⑽。c之 乾燥機中乾燥5分鐘,而獲得第二樹脂層用之附有PET膜 101113166 59 201247414 之樹脂片B(載體材料B)。 3·預浸體之製造 將第一樹脂層用之載體材料A、及第二樹脂層用之載體材 料B以使樹脂層與纖維基材相向之方式配置於玻璃纖維基 材(厚度15 //111,1;11出1^0以5?比61*公司製造£玻璃織布, E02Z 04 53SK,IPC 標準 1015,線膨脹係數:5.5 ppm/°c) 之兩面,藉由圖3所示之真空層壓裝置及熱風乾燥裝置含浸 樹脂組成物,而獲得積層有PET膜之預浸體。 具體而言,使載體材料A及載體材料B以位於玻璃纖維 基材之寬度方向之中心之方式分別重疊於玻璃纖維基材之 兩面,於自常壓減壓9.999χ104 pa(約750 Torr)以上之條件 下,使用80。(:之層壓輥進行接合。 此處,於玻璃纖維基材之寬度方向尺寸之内側區域中,使 载體材料A及載體材料B之樹脂層分別接合於玻璃纖維基 材之兩面側,並且於玻璃纖維基材之寬度方向尺寸之外側區 域中,使載體材料A及載體材料B之樹脂層彼此接合。 繼而,使上述經接合者於設定為12(rc之橫向搬送型之熱 風乾燥裝置内通過2分鐘,藉此可於不作用壓力之情況下進 行加熱處理而獲得預浸體1(P1)。 此時’第一樹脂層之厚度(C1)為9 _,麵纖維基材層 之厚度為15 Mm’第二樹脂層之厚度(€2)為3㈣,總厚 為27 /zrn ’ C2/C1為〇.33。再者,樹脂層之厚度可藉由切 1〇Ul3l66 60 201247414 割預浸體之剖面,利用光學顯微鏡進行觀察而測定。 (預浸體2、4、5) 預浸體2、4、5係如表2般變更第一樹脂層之厚度(C1)、 第二樹脂層之厚度(C2)、及所使用之玻璃纖維基材,除此以 外,以與預浸體1相同之方式製造。 (預浸體3) 1.樹脂組成物之清漆B之製備 使作為環氧樹脂B之萘骨架改質甲酚酚醛清漆型環氧樹 脂(DIC公司製造,EXA_732〇)12 〇重量份、作為氰酸酯樹脂 A之紛盤清漆型氰酸醋樹脂(L〇nza japan公司製造,primaset PT-30)12.0重量份、作為苯氧基樹脂a之上述所製作之含有 雙酚苯乙酮構造之苯氧基樹脂5 6重量份、作為硬化觸媒A 之符合上述通式(IX)之錯鹽化合物之填系觸媒(sumit〇m〇 BAKELITE公司製造,C05_Mb)〇 2重量份溶解、分散於甲 基乙基酮中。進而,添加作為填充材A之球狀二氧化矽 (Admatechs公司製造,SO_32R,平均粒徑i # m)65 〇重量 份、作為填充材B之球狀二氧化石夕⑽學咖公司製造, NSS-5N,平均粒徑75 nm)5.〇重量份、及作為偶合劑a之 r 環氧丙氧基丙基三曱氧基傾(GE TGshiba SiHe(me公司 製造’ A’0.2重量份,使用高速祕裝置攪拌3〇分鐘, 以不揮發分成為50重量%之方式進行調整,而製備樹脂組 成物之清漆B(樹脂清漆b)。 101113166 201247414 2,預浸體之製造 預浸體3係使用上述獲得之樹脂清漆B,並如表2般變更 第一樹脂層之厚度(C1)、第二樹脂層之厚度(C2)、及所使用 之玻璃纖維基材’除此以外,以與預浸體丨相同之方式製造。 (預浸體6) 預、/文體6係如表2般變更第一樹脂層之厚度(ci)、第二樹 脂層之厚度(C2),並將所使用之玻璃纖維基材變更為厚度 28 /zm、日東紡株式會公司製造τ玻璃織布、 WTX1035-53-X133、IPC 標準 1035、線膨脹係數:2.8ppm/ 。(:者’除此以外,以與預浸體1相同之方式製造。 (預浸體7) 1.樹脂組成物之清漆C之製備 使作為環氧樹脂A之聯苯芳烷基型酚醛清漆環氧樹脂(日 本化藥公司製造,NC-3000)8.0重量份、作為環氧樹脂b之 萘骨架改質曱酚酚醛清漆型環氧樹脂(DiC公司製造, EXA-7320)3.0重量份、作為雙馬來醯亞胺樹脂a之雙馬來 酿亞胺樹脂(K-I Chemical Industry 公司製造,ΒΜΙ-70)20·0 重量份、作為硬化觸媒Β之雙氰胺3.5重量份溶解、分散於 甲基乙基酮中。進而,添加作為填充材C之氫氧化鋁(昭和 電工公司製造,ΗΡ-360)65.0重量份與作為偶合劑β之環氧 矽烷(信越化學工業公司製造,ΚΒΜ·403Ε)0·5重量份,使用 高速攪拌裝置攪拌30分鐘,以不揮發分成為50重量%之方 101113166 62 201247414 式進行調整,而製備樹脂組成物之清漆c(樹脂清漆c)。 2,預浸體之製造 預/文體7係使用上述獲得之樹脂清漆c,並如表2般變更 第一樹月曰層之厚度(C1)、第二樹脂層之厚度(C2)、及所使用 之玻璃纖維基材,除此以外,以與預浸體丨相同之方式製造。 (預浸體8) 1.樹脂組成物之清漆D之製備 使作為環氧樹脂A之聯苯芳烷基型酚醛清漆環氧樹脂(日 本化藥公司製造,NC-3000)15.0重量份、作為環氧樹脂B 之奈骨架改質曱酚酚醛清漆型環氧樹脂(DIC公司製造, EXA-7320)2.0重量份、作為環氧樹脂c之萘二紛二環氧丙 基醚(DIC公司製造,EPICLON HP-4032D)6.0重量份、作為 氰酸酯樹脂C之通式(II)所表示之對二曱苯改質萘盼芳烧基 型氰酸酯樹脂(萘酚芳烷基型酚樹脂(東都化成公司製造, &quot;&quot;SN-485」)與氯化氰之反應物)16.0重量份、作為雙馬來醯 亞胺樹脂A之雙馬來酿亞胺樹脂(K-I Chemical Industry公 司製造’ BMI-70)6.5重量份、作為硬化觸媒A之符合上述 通式(IX)之鏽鹽化合物之磷系觸媒(SUMITOMO BAKELITE 公司製造,C05-MB)0.1重量份溶解、分散於曱基乙基酮中。 進而,添加作為填充材A之球狀二氧化石夕(Admatechs公司 製造’ SO-32R,平均粒徑1 //πι)40.0重量份、作為填充材 Β之球狀二氧化石夕(Tokuyama公司製造,NSS-5N,平均粒徑 101113166 63 201247414 75腿)7.0重量份、作為填充材D之聚石夕氧粒子(信越化學工 業公司製造,KMP600,平均粒徑5 Mm)7 〇重量份及作為 偶合劑B之環氧矽烷(信越化學工業公司製迭, KBM-40琴.4重量份,使用高速授拌裝置授摔%分鐘以 不揮發分成為50重量。/〇之方式進行調整,而製備樹脂組成 物之清漆D(樹脂清漆D)。 2·預浸體之製造 預次體8係使用上述獲得之樹脂清漆d,並如表2般變更 第一樹脂層之厚度(C1)、第二樹脂層之厚度(C2)、及所使用 之玻璃纖維基材,除此以外,以與預浸體i相同之方式製造。 (預浸體9) 1,樹脂組成物之清漆E之製備 使作為環氧樹脂D之萘醚变環氧樹脂(DIC公司製造, ΗΡ-6000)10·8重量份、作為氰酸酯樹脂A之紛酿清漆型氰 酸酉旨樹脂(Lonza Japan公司製造,Primaset PT-30)14.0重量 份、作為酚樹脂Β之萘酚芳烷基型酚樹脂(東都化成公司製 造’ SN-485)5.0重量份溶解、分散於曱基乙基酮中。進而, 添加作為填充材A之球狀二氧化石夕(Admatechs公司製造, SO-32R,平均粒徑1 〇重量份、作為填充材β之球 狀二氧化石夕(Tokuyama公司製造,NSS-5N,平均粒徑75 nm)5.0重量份、作為偶合劑八之7-環氧丙氧基丙基三甲氧 基矽烷(GE Toshiba Silicone公司製造,A187)0.2重量份,使 10Π13166 64 201247414 用尚速攪拌裝置攪拌30分鐘’以不揮發分成為50重量%之 方式進行調整’ *製韻脂組成物之清漆職脂清漆E)。 2.預浸體之製造 預浸體9係使用上述獲得之樹脂清漆E,並如表2般變更 第一樹脂層之厚度(C1)、第二樹脂層之厚度(C2)、及所使用 之玻璃纖維基材,除此以外’以與預浸體1相同之方式製造。 (預浸體10) 1. 樹脂組成物之清漆F之製備 使作為環氧樹脂E之多官能萘型環氧樹脂(DIC公司製 造’ HP-4750)15.6重量份、作為氰酸酯樹脂A之酚醛清漆 型氰酸酯樹脂(Lonza Japan公司製造,Primaset PT-30)14.0 重量份、作為硬化觸媒Α之符合上述通式(IX)之鑌鹽化合物 之磷系觸媒(SUMITOMO BAKEUTE公司製造,C05-MB)0.2 重量份溶解、分散於曱基乙基酮中。進而,添加作為填充材 A之球狀二氧化石夕(Admatechs公司製造,SO-32R,平均粒 徑1 /im)65.0重量份、作為填充材B之球狀二氧化石夕 (Tokuyama公司製造,NSS-5N,平均粒徑75 nm)5.0重量份、 作為偶合劑A之T -環氧丙氧基丙基三曱氧基石夕烧(GE Toshiba Silicone公司製造,A187)0.2重量份,使用高速搜 拌裝置攪拌30分鐘,以不揮發分成為50重量%之方式進行 調整,而製備樹脂組成物之清漆F(樹脂清漆F)。 2. 預浸體之製造 101113166 65 201247414 預浸體10係使用上述獲得之樹脂清漆F,並如表2般變 更第一樹脂層之厚度(ci)、第二樹脂層之厚度(C2)、及所使Fiber Co., Ltd., Nitto Spinning Co., Ltd. said Ridong Textile Co., Ltd. Further, the prepregs 1 to 8 are asymmetric prepregs, and the prepregs 9 to 15 are symmetrical prepregs. ' (Prepreg 1) 1. Preparation of varnish of resin composition. Biphenyl ray-type secret varnish epoxy resin as epoxy resin A (Daily 101113166 58 201247414 Manufactured by Chemicals, NC-3000) 11.0 8.8 parts by weight of a biphenyl diindenyl phenol resin (GPH-103, manufactured by Nippon Kayaku Co., Ltd.) as a resin A, and a novolac type cyanate resin as a nitrite resin A (Lonza Japan Co., Ltd.) 1 part by weight of 'Priaset PT-30' was produced, and 4.0 parts by weight of a bisphenol hydrazine type cyanate resin (manufactured by Lonza Japan Co., Ltd., Primaset BA230) as a cyanate resin was dissolved and dispersed in methyl ethyl ketone. Further, spherical cerium oxide (manufactured by Admatech Co., Ltd. 'SO-32R, average particle diameter 1 "111) 60.0 parts by weight and 7-glycidoxypropyltrioxane as coupling agent a were added. Based on 0.2 parts by weight of 'A187, manufactured by GE Toshiba Silicone Co., Ltd.', a varnish A (resin was prepared by mixing with a high-speed stirrer for 3 minutes, and adjusting the non-volatile content to 50% by weight to prepare a resin composition. Varnish A) 2. Production of carrier material A resin coating varnish A was applied to a pET film (polyethylene terephthalate) in such a manner that the thickness of the dried resin layer was 13.0. 'On the Purex Film 'Thickness 36 (4) manufactured by DuPont Teijin Film Co., Ltd.), it was dried in a drying apparatus of (10) for 5 minutes. (4) Resin sheet A of the PET film for the first resin layer (carrier material A) In the same manner, the above resin varnish A is applied onto the PET film, and the thickness of the dried wax layer is 7 G #m, and dried in a dryer of (10) c for 5 minutes. Two resin layers are attached with PET film 10111 3166 59 201247414 Resin sheet B (carrier material B) 3. Preparation of prepreg The carrier material A for the first resin layer and the carrier material B for the second resin layer are oriented such that the resin layer faces the fiber substrate The method is configured on a glass fiber substrate (thickness 15 //111,1;11 out1^0 to 5? ratio 61* company made of glass woven fabric, E02Z 04 53SK, IPC standard 1015, linear expansion coefficient: 5.5 ppm/ On both sides of the °c), a vacuum laminate device and a hot air drying device shown in Fig. 3 are impregnated with a resin composition to obtain a prepreg having a PET film laminated thereon. Specifically, the carrier material A and the carrier material B are made The method is placed on the two sides of the glass fiber substrate in the center of the width direction of the glass fiber substrate, and 80% is used under the conditions of normal pressure and pressure reduction of 9.999 χ 104 Pa (about 750 Torr) or more. Here, in the inner region of the width direction dimension of the glass fiber substrate, the resin layers of the carrier material A and the carrier material B are bonded to both sides of the glass fiber substrate, respectively, and to the glass fiber substrate. In the outer side area of the width direction dimension, make The resin layers of the material A and the carrier material B are joined to each other. Then, the bonded person is allowed to pass through the hot air drying device set to 12 (rc lateral transfer type) for 2 minutes, whereby the heating can be performed without applying pressure. The prepreg 1 (P1) is obtained by treatment. At this time, the thickness (C1) of the first resin layer is 9 _, the thickness of the surface fiber substrate layer is 15 Mm, and the thickness of the second resin layer (€2) is 3 (four). The total thickness is 27 /zrn ' C2/C1 is 〇.33. Further, the thickness of the resin layer can be measured by cutting the cross section of the prepreg by using a slit, and observing it with an optical microscope. (Prepreg 2, 4, 5) The prepregs 2, 4, and 5 change the thickness (C1) of the first resin layer, the thickness (C2) of the second resin layer, and the glass fiber used as shown in Table 2 The substrate was produced in the same manner as the prepreg 1 except for the above. (Prepreg 3) 1. Preparation of the varnish B of the resin composition. The naphthalene skeleton as the epoxy resin B was modified to a cresol novolac type epoxy resin (manufactured by DIC Corporation, EXA_732), and was used as a cyanide. 12.0 parts by weight of a varnish-type cyanate resin (manufactured by L〇nza japan Co., Ltd., primaset PT-30) of the acid ester resin A, and the benzene having a bisphenol acetophenone structure prepared as the phenoxy resin a described above 5 parts by weight of the oxy resin, as a crosslinking catalyst of the hardening catalyst A, which is a salt-compounding compound of the above formula (IX) (manufactured by Sumit〇m〇BAKELITE Co., Ltd., C05_Mb), 2 parts by weight, dissolved and dispersed in A In the ethyl ethyl ketone. Further, spherical cerium oxide (manufactured by Admatechs Co., Ltd., SO_32R, average particle diameter i #m), 65 parts by weight, and spherical spheroidal dioxide (10), which is a filler B, is added as a filler A, and NSS is produced. -5N, an average particle diameter of 75 nm) 5. 〇 by weight, and as a coupling agent a, r-glycidoxypropyltrimethoxy oxime (GE TGshiba SiHe (manufactured by Me Company, 'A' 0.2 parts by weight, used The high-speed secret device was stirred for 3 minutes, and the non-volatile matter was adjusted to 50% by weight to prepare a varnish B (resin varnish b) of the resin composition. 101113166 201247414 2, Prepreg 3 prepreg was used. The resin varnish B obtained above was changed as shown in Table 2, and the thickness (C1) of the first resin layer, the thickness (C2) of the second resin layer, and the glass fiber substrate used 'except for the prepreg The body is manufactured in the same manner. (Prepreg 6) Pre-/Section 6 The thickness of the first resin layer (ci) and the thickness of the second resin layer (C2) are changed as shown in Table 2, and the glass to be used is used. The fiber base material was changed to a thickness of 28 /zm, and the TT glass woven fabric manufactured by Nitto Spinning Co., Ltd., WTX1035-53-X13 3. IPC Standard 1035, coefficient of linear expansion: 2.8 ppm/. (: 'Other than that, manufactured in the same manner as Prepreg 1. (Prepreg 7) 1. Preparation of varnish C of resin composition 8.0 parts by weight of a biphenyl aralkyl type novolak epoxy resin (manufactured by Nippon Kayaku Co., Ltd., NC-3000) as epoxy resin A, and a naphthalene skeleton modified as an epoxy resin b. (manufactured by DiC, EXA-7320), 3.0 parts by weight, as a bismaleimide resin a, a bismaleimide resin (manufactured by KI Chemical Industry Co., Ltd., ΒΜΙ-70) 20·0 parts by weight, as a hardening touch 3.5 parts by weight of dicyandiamide of the medium was dissolved and dispersed in methyl ethyl ketone. Further, 65.0 parts by weight of aluminum hydroxide (manufactured by Showa Denko Co., Ltd., ΗΡ-360) as a filler C was added and a coupling agent β was added. 0.15 parts by weight of epoxy decane (manufactured by Shin-Etsu Chemical Co., Ltd., ΚΒΜ·403Ε), stirred for 30 minutes using a high-speed stirring device, and adjusted to have a non-volatile content of 50% by weight, 101113166 62 201247414, to prepare a resin composition Varnish c (resin varnish c). 2, prepreg The manufacturing pre-texture 7 uses the resin varnish c obtained above, and changes the thickness (C1) of the first tree layer, the thickness (C2) of the second resin layer, and the glass fiber substrate used as shown in Table 2. In addition, it is manufactured in the same manner as the prepreg. (Prepreg 8) 1. Preparation of varnish D of resin composition. Biphenyl aralkyl type novolac epoxy resin as epoxy resin A. 15.0 parts by weight of an epoxy resin B, which is manufactured by Nippon Kayaku Co., Ltd., as an epoxy resin B, 2.0 parts by weight of an anthraquinone novolac type epoxy resin (EXA-7320, manufactured by DIC Corporation). C naphthalene di-di-epoxypropyl ether (manufactured by DIC Corporation, EPICLON HP-4032D) 6.0 parts by weight, as the cyanate resin C, represented by the formula (II) Basic cyanate resin (reactive naphthol aralkyl type phenol resin (manufactured by Dongdu Chemical Co., Ltd., &quot;&quot;SN-485") and cyanogen chloride) 16.0 parts by weight as a bismaleimide resin 6.5 parts by weight of a double-malay-imine resin (manufactured by KI Chemical Industry Co., Ltd., BMI-70) of A, as a hardening catalyst A 0.1 parts by weight of a phosphorus-based catalyst (manufactured by SUMITOMO BAKELITE Co., Ltd., C05-MB) which is a rust salt compound of the above formula (IX) is dissolved and dispersed in mercaptoethyl ketone. In addition, 40.0 parts by weight of spherical sulfur dioxide (manufactured by Admatech Co., Ltd., 'SO-32R, average particle diameter 1 // πι)) was added as a filler A, and spherical sulphur dioxide was used as a filler Β (made by Tokuyama Co., Ltd.). , NSS-5N, average particle size 101113166 63 201247414 75 legs) 7.0 parts by weight, as a filler D, agglomerated oxygen particles (manufactured by Shin-Etsu Chemical Co., Ltd., KMP600, average particle size 5 Mm) 7 〇 by weight and as an even Mixture B of epoxy decane (manufactured by Shin-Etsu Chemical Co., Ltd., KBM-40 Qin. 4 parts by weight, using a high-speed mixing device to give a drop of % minutes to make a non-volatile content of 50%. / 〇 to adjust the resin The varnish D (resin varnish D) of the composition. 2. The prepreg 8 was prepared by using the resin varnish d obtained above, and the thickness (C1) of the first resin layer and the second resin were changed as shown in Table 2. The thickness of the layer (C2) and the glass fiber substrate to be used were produced in the same manner as in the prepreg i. (Prepreg 9) 1. Preparation of the varnish E of the resin composition as a ring Oxygenated resin D naphthalene ether modified epoxy resin (manufactured by DIC Corporation, ΗΡ-6000) 10· 8 parts by weight of a varnish-type cyanate resin (Chromate PT-30, manufactured by Lonza Japan Co., Ltd.) as a cyanate resin A, 14.0 parts by weight, and a naphthol aralkyl type phenol resin as a phenol resin (East) 5.0 parts by weight of "SN-485" manufactured by Huacheng Co., Ltd. was dissolved and dispersed in mercaptoethyl ketone. Further, spherical cerium oxide as filler A was added (manufactured by Admatechs Co., Ltd., SO-32R, average particle size 1 〇) Parts by weight, spherical spheroidal dioxide as a filler β (manufactured by Tokuyama Co., Ltd., NSS-5N, average particle diameter: 75 nm), 5.0 parts by weight, as a coupling agent, 8-glycidoxypropyltrimethoxy 0.2 parts by weight of decane (manufactured by GE Toshiba Silicone Co., Ltd., A187), and 10 Π 13166 64 201247414 was stirred by a stirring device for 30 minutes to adjust the non-volatile content to 50% by weight. Varnish E) 2. Preparation of prepreg The prepreg 9 is obtained by using the resin varnish E obtained above, and changing the thickness (C1) of the first resin layer and the thickness (C2) of the second resin layer as shown in Table 2, And the glass fiber substrate used, except The ingot 1 was produced in the same manner. (Prepreg 10) 1. Preparation of the varnish F of the resin composition 15.6 parts by weight of a polyfunctional naphthalene type epoxy resin (HP-4750, manufactured by DIC Corporation) as the epoxy resin E 14.0 parts by weight of a novolac type cyanate resin (Primaset PT-30, manufactured by Lonza Japan Co., Ltd.) which is a cyanate resin A, and a phosphorus system which is a hardening catalyst and which meets the above-mentioned salt compound of the general formula (IX) Catalyst (manufactured by SUMITOMO BAKEUTE Co., Ltd., C05-MB) 0.2 parts by weight was dissolved and dispersed in mercaptoethyl ketone. Furthermore, 65.0 parts by weight of spherical spheroidal dioxide (manufactured by Admatechs Co., Ltd., SO-32R, average particle diameter 1 /im) was added as a filler A, and spherical sulphur dioxide as a filler B was produced (Tokuyama Co., Ltd., NSS-5N, an average particle diameter of 75 nm), 5.0 parts by weight, as a coupling agent A, T-glycidoxypropyltrimethoxy Oxime (manufactured by GE Toshiba Silicone Co., Ltd., A187) 0.2 parts by weight, using high speed search The mixing apparatus was stirred for 30 minutes, and adjusted so that the nonvolatile content became 50% by weight, and the varnish F (resin varnish F) of the resin composition was prepared. 2. Production of Prepreg 101113166 65 201247414 The prepreg 10 is obtained by using the resin varnish F obtained above, and changing the thickness (ci) of the first resin layer, the thickness (C2) of the second resin layer, and Make

用之玻璃纖維基材,除此以外,以與預浸體1相同之方式黎J 造。 (預浸體11) 於上述獲得之樹脂清漆A中含浸玻堉纖維基材(厚度15 &quot;m,Unitika Glass Fiber 公司製造 E 破璃織布,E〇2Z 〇4 53SK,IPC 標準 1015,線膨脹係數:5·5 ppmn:),於 150 °〇之加熱爐中乾燥2分鐘,而獲得預浸體。此時,玻璃纖維 基材層之厚度為15 於該玻璃纖維基材層之兩面設置 有相同厚度(6 em)之樹脂層,總厚為27 am。 (預浸體12、14) 預浸體12、14係如表2般變更樹脂層之厚度及所使用之 玻璃纖維基材,除此以外,以與預浸體1丨相同之方式製造。 (預浸體13) 預浸體13係使用上述獲得之樹脂清漆B,並如表2般變 更樹脂層之厚度及所使用之玻璃纖維基材,除此以外,以與 預浸體11相同之方式製造。 (預浸體15) 預浸體15係如表2般變更樹脂層之厚度,並將所使用之 玻璃纖維基材變更為厚度28 /im、日東紡公司製造τ破璃 織布、WTX1035-53-Xl33、IPC標準1035、線膨脹係數: 101113166 66 201247414 2.8 ppm/°C者,除此以外,以與預浸體11相同之方式製造。 (預浸體16) 預浸體16係使用上述獲得之樹脂清漆C,並如表2般變 更樹脂層之厚度及所使用之玻璃纖維基材,除此以外,以與 預浸體11相同之方式製造。 (預浸體17) 預浸體17係使用上述獲得之樹脂清漆D,並如表2般變 更樹脂層之厚度及所使用之玻璃纖維基材,除此以外,以與 預浸體11相同之方式製造。 於實施例1〜13及比較例1〜9中,使用上述預浸體1〜 17(於表中簡記為P1〜17)製造積層板,使用該積層板製造電 路基板及半導體封裝。 (實施例1) 1.積層板之製造 自2片預浸體1(P1)將各自之兩面之PET膜剝離,以使相 互之第一樹脂層分別相向之方式進行積層,於所獲得之積層 體之兩面重疊12 /im之銅箔(三井金屬礦業公司製造 3EC-VLP箔),於220。。、3 MPa下進行2小時加熱加壓成 形,藉此獲得附有金屬箔之積層板。所獲得之附有金屬箔之 積層板之核心層(包含積層板之部分)之厚度為0.054 mm。再 者,本實施例/比較例中所使用之預浸體或樹脂層於硬化前 後厚度幾乎不變。因此,核心層(包含積層板之部分)之厚度 101113166 67 201247414 成為預浸體之厚度之合計。 2.增層之製造 使作為氰酸酯樹脂A之酚醛清漆型氰酸酯樹脂江⑽ Japan公司製造,Pdmaset m〇)25重量份、作為 A之聯苯芳烷基聖酚醛清漆環氧樹脂(日本化藥公司制、止曰 NC-3_25重量份、作為苯氧基樹脂A之上述^=含 有雙盼苯乙_造之苯氧基樹脂1G重量份、作為硬化= 劑之咪唑化合物(四國化成工業公司製造, 卜本基咪 唑)〇.4重量份溶解、分散於甲基乙基酮中。進而,添加作為 填充材A之球狀一氧化石夕(Admatechs公司製造,s〇 32R 平均粒徑1 /zm)39.4重量份與作為偶合劑a之環氧丙氧 基丙基二甲氧基矽烷(GE T〇shiba Silic〇ne公司製造, A187)0.2重量份,使用高速㈣裝置㈣3Q分鐘以不揮 發分成為50重量%之方式進行調整,而製備樹脂組成物之 清漆G(樹脂清漆G)。 使用模塗佈機裝置將樹脂清漆G以乾燥後之樹脂層之厚 度成為22.0 之方式塗敷於pET膜(聚對笨二甲酸乙二 酯,杜邦帝人薄膜公司製造PurexFilm,厚度36以叫上, 將其於16G°C之乾縣置中乾燥5分鐘,而獲得第—樹脂層 用之附有PET膜之樹脂片C(載體材料C)。 又,以相同之方式將樹脂清漆G塗敷於PET膜上,以乾 燥後之樹脂層之厚度成為11〇 之方式於16〇〇c之乾燥 101113166 68 201247414 機中乾燥5分鐘,而獲得第二樹脂層用之附有PET膜之樹 脂片D(載體材料D)。 將第一樹脂層用之載體材料C、及第二樹脂層用之載體材 料D以使樹脂層與纖維基材相向之方式配置於玻璃纖維基 材(厚度15 #〇1,1111出1^0以3卩1061:公司製造£玻璃織布, E02Z Ό4 53SK,IPC 標準 1015,線膨脹係數:5·5 ppm/°C) 之兩面,藉由圖3所示之真空屬壓裝置及熱風乾燥裝置含浸 樹脂組成物,而獲得積層有PET膜之增層A。 具體而言,使載體材料C及載體材料D以位於玻璃纖維 基材之寬度方向之中心之方式分別重疊於玻璃纖維基材之 兩面,於自常壓減壓9·999χ104 Pa(約750 Torr)以上之條件 下’使用80°C之層壓輥進行接合。 此處,於玻璃纖維基材之寬度方向尺寸之内侧區域内,使 載體材料C及載體材料D之樹脂層分別接合於玻璃纖維基 材之兩面側,並且於玻璃纖維基材之寬度方向尺寸之外側區 域内,使載體材料C及载體材料d之樹脂層彼此接合。 繼而’使上述已接合者於設定為12〇。〇之橫向搬送型之熱 風乾燥裝置内通過2分鐘,藉此可於不作用壓力之情況下進 行加熱處理而獲得增層A。 此時’第一樹脂層之厚度((:1)為18 #m,玻璃纖維基材 層之厚度為15 //m,第二樹脂層之厚度(C2)為7 ,總 厚為 40 ,C2/C1 為 ο·%。 10Π13166 69 201247414 3.阻焊層之製造 使作為氰酸酯樹脂A之酚醛清漆型氰酸酯樹脂(L〇nza Japan公司製造,Primaset ρτ_3〇)25重量份、作為環氧樹脂 Α之聯苯芳烷基型酚醛清漆環氧樹脂(日本化藥公司製造, NC-3_)25重量份、作為笨氧基樹脂a之上述製作之含有 雙紛苯乙嗣構造之苯氧基樹脂1()重量份、作為硬化促進劑 之咪唑化合物(四國化成工業公司製造,1-苄基-2-苯基咪 。坐)0.4重量份溶解、分散於甲基乙基酮中。進而,添加作為 真充材A之球狀一氧化石夕(Admatechs公司製造,s〇_32r, 平均粒徑1 &quot;m)39重量份、作為偶合劑A之r-環氧丙氧 基丙基三甲氧基石夕燒(GE Toshiba Silicone公司製造, A_.2重量份、以固形份計為0.4重量份之作為著色劑A 之2藍:f并咪唑,甲基乙基酮(=1/1/8)混合物(山陽色 素A司’使用高速獅裝置擾拌3G分鐘,以不揮發分 !·/。之方式進行調整,而調整樹脂組成物之清漆 Η(樹脂清漆只)。 使用模盒佈機裝置將樹脂清漆Η以乾燥後之樹脂層之;I 度成為14.0 &quot; m之方式塗敷於PET膜(聚對笨二曱酸乙二 醋:土邦帝人薄犋公司製造In addition to the glass fiber substrate, it was made in the same manner as the prepreg 1. (Prepreg 11) The resin varnish A obtained above was impregnated with a glass fiber substrate (thickness 15 &quot;m, E-glass woven fabric manufactured by Unitika Glass Fiber Co., Ltd., E〇2Z 〇4 53SK, IPC standard 1015, line Expansion coefficient: 5·5 ppmn:), dried in a heating oven at 150 ° for 2 minutes to obtain a prepreg. At this time, the thickness of the glass fiber base material layer was 15 and the resin layer of the same thickness (6 em) was provided on both sides of the glass fiber base material layer, and the total thickness was 27 am. (Prepreg 12, 14) The prepregs 12 and 14 were produced in the same manner as the prepreg 1 except that the thickness of the resin layer and the glass fiber substrate used were changed as shown in Table 2. (Prepreg 13) The prepreg 13 is the same as the prepreg 11 except that the resin varnish B obtained above is used and the thickness of the resin layer and the glass fiber substrate used are changed as shown in Table 2. Way to manufacture. (Prepreg 15) The thickness of the resin layer was changed in the prepreg 15 as shown in Table 2, and the glass fiber substrate to be used was changed to a thickness of 28 / im, and the τ ray woven fabric manufactured by Nitto Spin Co., Ltd., WTX 1035-53 -Xl33, IPC Standard 1035, Linear Expansion Coefficient: 101113166 66 201247414 2.8 ppm/°C, except that it was produced in the same manner as the prepreg 11. (Prepreg 16) The prepreg 16 is the same as the prepreg 11 except that the resin varnish C obtained above is used and the thickness of the resin layer and the glass fiber substrate used are changed as shown in Table 2. Way to manufacture. (Prepreg 17) The prepreg 17 is the same as the prepreg 11 except that the resin varnish D obtained above is used and the thickness of the resin layer and the glass fiber substrate used are changed as shown in Table 2. Way to manufacture. In the examples 1 to 13 and the comparative examples 1 to 9, the prepreg 1 to 17 (abbreviated as P1 to 17 in the table) were used to produce a laminate, and the laminate and the semiconductor package were produced using the laminate. (Example 1) 1. Production of laminates The PET films of the respective two faces were peeled off from two sheets of prepreg 1 (P1) so that the first resin layers were laminated to each other, and the obtained laminate was laminated. On both sides of the body, 12/im copper foil (3EC-VLP foil manufactured by Mitsui Mining & Mining Co., Ltd.) is overlapped at 220. . At 2 MPa, heating and pressurization were carried out for 2 hours, whereby a laminated sheet with a metal foil was obtained. The thickness of the core layer (including the portion of the laminate) of the obtained metal foil-clad laminate was 0.054 mm. Further, the thickness of the prepreg or the resin layer used in the present embodiment/comparative example was hardly changed after the curing. Therefore, the thickness of the core layer (including the portion of the laminate) 101113166 67 201247414 becomes the total thickness of the prepreg. 2. Manufacture of a layered layer of 25 parts by weight of a novolak-type cyanate resin (Cdmaset m®) manufactured by Cyanate Resin A as a cyanate resin A, and a biphenyl aralkyl phenol novolak epoxy resin as A ( Manufactured by Nippon Kayaku Co., Ltd., NC-3_25 parts by weight, as the phenoxy resin A, 1 part by weight of a phenoxy resin containing bismuth phenylene resin, and an imidazole compound as a hardening agent (four countries) 4 parts by weight of blister-based imidazole) was dissolved and dispersed in methyl ethyl ketone. Further, spherical oxidized stone as a filler A was added (manufactured by Admatechs Co., Ltd., s〇32R average particle size 1) /zm) 39.4 parts by weight and 0.2 part by weight of glycidoxypropyl dimethoxydecane (manufactured by GE T〇shiba Silic〇ne Co., Ltd., A187) as a coupling agent a, using a high-speed (four) device (four) for 3Q minutes to be non-volatile The varnish G (resin varnish G) of the resin composition was prepared so as to be adjusted to 50% by weight. The resin varnish G was applied to the pET in such a manner that the thickness of the dried resin layer was 22.0 by using a die coater apparatus. Membrane (poly(p-butylene dicarboxylate), Du The Bondi Film Co., Ltd. manufactures PurexFilm, which has a thickness of 36, and is dried in a dry county of 16 G ° C for 5 minutes to obtain a resin film C (carrier material C) with a PET film for the first resin layer. Further, the resin varnish G was applied to the PET film in the same manner, and dried in a dry film of 101 166 166 68 201247414 for 5 minutes in a manner of drying the resin layer to a thickness of 11 ,, and obtained a second. A resin sheet D (carrier material D) to which a PET film is attached, a carrier material C for the first resin layer, and a carrier material D for the second resin layer in such a manner that the resin layer faces the fiber substrate Disposed on glass fiber substrate (thickness 15 #〇1, 1111 out1^0 to 3卩1061: company made of glass woven fabric, E02Z Ό4 53SK, IPC standard 1015, linear expansion coefficient: 5·5 ppm/°C) On both sides, the vacuum-forming device and the hot air drying device shown in FIG. 3 are impregnated with the resin composition to obtain a build-up layer A in which a PET film is laminated. Specifically, the carrier material C and the carrier material D are located at the glass fiber. The center of the width direction of the substrate overlaps the glass fiber base The two sides are joined by a laminating roll of 80 ° C under the conditions of a normal pressure and a reduced pressure of 9·999 χ 104 Pa (about 750 Torr). Here, in the inner side of the width direction of the glass fiber substrate The resin layer of the carrier material C and the carrier material D are respectively bonded to the both sides of the glass fiber substrate, and the resin layer of the carrier material C and the carrier material d is disposed in the outer side region of the width direction dimension of the glass fiber substrate. Engage each other. Then, the above-mentioned joined person is set to 12 〇. In the horizontally-transport type hot air drying device, the inside of the crucible is passed for 2 minutes, whereby the build-up layer A can be obtained by performing heat treatment without applying pressure. At this time, the thickness of the first resin layer ((:1) is 18 #m, the thickness of the glass fiber substrate layer is 15 //m, the thickness of the second resin layer (C2) is 7, and the total thickness is 40, C2 /C1 is ο·%. 10Π13166 69 201247414 3. Production of a solder resist layer 25 parts by weight of a novolac type cyanate resin (Primaset ρτ_3〇, manufactured by L〇nza Japan Co., Ltd.) as a cyanate resin A Oxygen resin bismuth phenyl aralkyl novolac epoxy resin (manufactured by Nippon Kayaku Co., Ltd., NC-3_) 25 parts by weight, as described above, a phenoxy compound The base resin 1 (parts by weight), an imidazole compound (manufactured by Shikoku Chemicals Co., Ltd., 1-benzyl-2-phenylmethane, sitting) 0.4 parts by weight of the base resin was dissolved and dispersed in methyl ethyl ketone. Further, spheroidal nitric oxide as a true filler A (manufactured by Admatechs Co., Ltd., s〇_32r, average particle diameter 1 &quot;m) 39 parts by weight, as a coupling agent A, r-glycidoxypropane C was added. Trimethoxy zephyr (manufactured by GE Toshiba Silicone Co., Ltd., A_. 2 parts by weight, 0.4 parts by weight in solid form as a coloring agent) A 2 blue: f and imidazole, methyl ethyl ketone (=1 / 1 / 8) mixture (Shanyang pigment A Division 'use the high-speed lion device to mix 3G minutes, adjust in a non-volatile way! · /. The varnish of the resin composition is adjusted (resin varnish only). The resin varnish is applied to the dried resin layer using a die-bonding machine device; the film is applied to the PET film at a degree of 14.0 &quot; m (poly pair) Stupid acid bismuth vinegar: manufactured by Tubang Teijin

Purex Film,厚度 36 // m)上, ;C之乾燥裝置中乾燥5分鐘,而獲得第一樹脂,Purex Film, thickness 36 // m), dried in a drying device of C for 5 minutes to obtain the first resin,

用之附有PET般+此H 興之樹脂片E(載體材料E)。 、同之方式將樹脂清漆Η塗敷於pet膜上,以彰 101113166 201247414 燥後之樹脂層之厚度成為9.0 之方式於160°C之乾燥機 中乾燥5分鐘,而獲得第二樹脂層用之附有PET膜之樹脂 片F(载體材料F)。 將第一樹脂層用之載體材料E、及第二樹脂層用之裁體材 料F以使樹脂層與纖維基材相向之方式配置於玻璃纖維基 材(厚度15以m,Unitika Glass Fiber公司製造E玻璃織布, E02Z 04 53SK,IPC 標準 1015,線膨脹係數:5·5 PPm/t) 之兩面,藉由圖3所示之真空層壓裝置及熱風乾燥裝置含浸 樹脂組成物’而獲得積層有PET膜之阻焊層A。 具體而言,使載體材料E及載體材料F以位於玻璃纖維 基材之寬度方向之中心之方式分別重疊於玻璃纖維基材之 兩面,於自常壓減壓9.999x104 Pa(約750 Torr)以上之條件 下’使用80°C之層壓輥進行接合。 此處’於玻璃纖維基材之寬度方向尺寸之内側區域内,使 載體材料E及載體材料F之樹脂層分別接合於玻璃纖維基 材之兩面側’並且於玻璃纖維基材之寬度方向尺寸之外側區 域内,使載體材料E及載體材料F之樹脂層彼此接合。 繼而,使上述已接合者於設定為12〇。〇之橫向搬送型之熱 風乾燥裝置内通過2分鐘,藉此可於不作用壓力之情況下進 行加熱處理而獲得阻焊層A。 此時,第-樹脂層之厚度⑼為1〇㈣,玻璃纖維基材 層之厚度為15 ,第二樹脂層之厚度(C2)為5以以,總 101Π3166 71 201247414 厚為 30 ,C2/C1 為 0.5。 4·電路基板之製造 使用上述獲得之附有金屬箔之積層板作為核心基板,將上 述獲得之增層A之第一樹脂層側之ΡΕτ膜剝離,使第一樹 脂層重疊於其兩面形成有電路圖案(殘銅率7〇%,L/5=: 50/50 //m)之内層電路基板之表背面。使用真空加壓式貼合機裝 置’以溫度150°C、壓力1 MPa、時間120秒進行真空加熱 加壓成形。其後,利用熱風乾燥裝置,於22〇t:下進行60 分鐘加熱硬化,將第二樹脂層側之PET膜剝離。繼而,藉 由碳酸雷射形成盲孔(blind via hole,非貫通孔)繼而,將 孔内及樹脂層表面於60°C之膨潤液(Atotech Japan公司製It is attached with PET-like resin sheet E (carrier material E). In the same manner, the resin varnish is applied to the pet film, and dried in a dryer at 160 ° C for 5 minutes in a manner that the thickness of the dried resin layer is 9.0101166 201247414, and the second resin layer is obtained. A resin film F (carrier material F) to which a PET film is attached. The carrier material E for the first resin layer and the cut material F for the second resin layer are disposed on the glass fiber substrate so as to face the fiber substrate so as to face the fiber substrate (thickness 15 m, manufactured by Unitika Glass Fiber Co., Ltd.) E-glass woven fabric, E02Z 04 53SK, IPC standard 1015, linear expansion coefficient: 5·5 PPm/t) on both sides, obtained by laminating resin composition by vacuum laminating device and hot air drying device shown in Fig. 3 There is a solder mask layer A of PET film. Specifically, the carrier material E and the carrier material F are respectively superposed on both sides of the glass fiber substrate so as to be at the center in the width direction of the glass fiber substrate, and are decompressed from normal pressure by 9.999 x 104 Pa (about 750 Torr) or more. Under the conditions of 'bonding using a laminating roller at 80 ° C. Here, in the inner region of the width direction dimension of the glass fiber substrate, the resin layers of the carrier material E and the carrier material F are bonded to the both sides of the glass fiber substrate, respectively, and the dimensions of the glass fiber substrate are in the width direction. In the outer region, the carrier materials E and the resin layers of the carrier material F are bonded to each other. Then, the above-mentioned joined person is set to 12 〇. The horizontal transfer type of the hot air drying device is passed for 2 minutes, whereby the solder resist layer A can be obtained by heat treatment without applying pressure. At this time, the thickness (9) of the first resin layer is 1 〇 (4), the thickness of the glass fiber substrate layer is 15 , and the thickness (C2) of the second resin layer is 5 Å, total 101 Π 3166 71 201247414 thickness is 30, C 2 / C 1 Is 0.5. 4. Manufacturing of Circuit Board Using the metal foil-clad laminate obtained above as a core substrate, the ΡΕτ film on the first resin layer side of the buildup layer A obtained above is peeled off, and the first resin layer is formed on both sides thereof. The front and back of the inner circuit board of the circuit pattern (residual copper ratio: 7〇%, L/5=: 50/50 //m). The vacuum pressurizing laminator apparatus was used for vacuum heating and press forming at a temperature of 150 ° C, a pressure of 1 MPa, and a time of 120 seconds. Thereafter, the film was heat-cured by a hot air drying device at 22 Torr for 60 minutes to peel off the PET film on the second resin layer side. Then, a blind hole (non-through hole) is formed by a carbonic acid laser, and then the swelling liquid in the hole and the surface of the resin layer at 60 ° C (Atotech Japan)

造 ’ Swelling Dip Securigant P)中浸漬 5 分鐘,進而於 80°C 之過猛酸舒水溶液(Atotech Japan公司製造,Concentrate Compact CP)中浸潰10分鐘後,中和而進行粗化處理。 經過脫脂、觸媒賦予、活化之步驟後,使其形成約0.5〆 m之非電解鍍銅皮膜,形成抗電鐘層,以非電解鑛銅皮膜為 供電層形成10 /zm之鍍銅圖案,實施L/s = 5〇/5〇以爪之 微細電路加工。繼而,利用熱風乾燥裝置於2〇〇&lt;t下進行6〇 分鐘退火處理後,利用快速蝕刻將供電層除去。 繼而,將上述獲得之阻焊層A之第一樹脂層側之pET膜 剝離而使第一樹脂層重疊,使用真空加壓式貼合機裝置,以 溫度150 C、壓力1 MPa、時間120秒進行真空加熱加壓成 101113166 72 201247414 形。其後,利用熱風乾燥裝置於220°C下進行60分鐘加熱 硬化’將第二樹脂層側之pET膜剝離。繼而,藉由碳酸雷 射形成盲孔(非貫通孔)以使搭載半導體元件之垾墊等露出。 最後,形成包含自阻焊層A露出之電路層上之3 之 非電解鍍鎳層及進而於其上之Q1,之非電解锻金層的 鐘敷層’將所獲得之基板切割為50 mm&gt;&lt;50 mm之尺寸,而 獲得半導體封裝用之電路基板。 5·半導體封裝之製造 藉由倒裝芯片接合機裝置,藉由加熱壓接將具有焊锡凸塊 之半導體元件(熱電發電(TEG,Thermoelectric generator)晶 片’尺寸20mmx20mm,厚度725 /zm)搭載於半導體封裝 用之電路基板上。繼而’利用紅外線(IR,infrared radiation) 回焊爐使焊錫凸塊熔融接合後,填充液狀密封樹脂 (SUMITOMO BAKELITE 公司製造,CRP-X4800B),使該液 狀密封樹脂硬化,藉此獲得半導體封裝。再者,液狀密封樹 脂係於溫度150°C、120分鐘之條件下硬化《又,上述半導 體元件之焊錫凸塊係使用以Sn/Ag/Cu組成之無錯焊錫形成 者。 (實施例2〜8、12、13) 於實施例2〜8、12、13中,分別使用預浸體2〜10,除 此以外,以與實施例1相同之方式製造附有金屬之積層板、 電路基板、半導體封裝。 101113166 73 201247414 (實施例9) 以預浸體4、預浸體14、預浸體4之順序,將各預浸體4 之兩面之PET膜剝離,以使預浸體4之第一樹脂層分別接 觸於預浸體14側之方式積層合計3片之預浸體,除此以外, 以與實施例1相同之方式製造附有金屬箔之積層板、電路基 板、半導體封裝。 (實施例10) 以預浸體4、預浸體14、預浸體14、預浸體4之順序, 將各預浸體4之兩面之PET膜剝離,以使預浸體4之第一 樹脂層分別接觸於預浸體14側之方式積層合計4片之預浸 體,除此以外,以與實施例1相同之方式製造附有金屬箔之 積層板、電路基板、半導體封裝。 (實施例11) 將4片預浸體4(P4)之各自之兩面之PET膜剝離,以使預 浸體4之第一樹脂層朝向積層板之中心方向之方式積層合 計4片之預浸體,除此以外,以與實施例1相同之方式製造 附有金屬箔之積層板、電路基板、半導體封裝。 (比較例1〜7) 於比較例1〜7中,分別積層預浸體11〜17各2片,除此 以外,以與實施例1相同之方式製造附有金屬箔之積層板、 電路基板、半導體封裝。 (比較例8、9) 101113166 74 201247414 於比較例8、9中,分別積層3月、4片預浸體14,除此 以外,以與實施例1相同之方式製造附有金屬箔之積層板、 電路基板、半導體封裝。 針對藉由各實施例及比較例獲得之附有金屬箱之積層 板、電路基板、半導體封震,進行如下各評價。將各評價與 評價方法一併示於以下。將所獲得之結果示於表3、4。又, 將實施例與比較例中之基板翹曲之變化量((比較例甲之基 板翹曲量)一(實施例中之基板翹曲量))示於表5 ^ (1) 基板麵曲量 以中心附近之270 mmx350 mm之尺寸切割實施例及比較 例中製作之附有金屬箔之積層板,利用蝕刻液將金屬箔剝離 後,以30 mm之間隔切割成5〇 mmx50 mm之尺寸,而獲得 合計12片之基板翹曲用樣品。所獲得之樣品之基板翹曲係 使用溫度可變雷射三維測定機(LS200-MT100MT50 : T-TEC 公司製造)’進行常溫(25。〇下之基板之勉曲之測定。 測定範圍係於48 mmx48 mm之範圍内,向基板之一面施 加雷射進行測定,將自雷射頭之距離中最遠點與最近點之差 設為各片之魅曲量’將各片之翹曲量之平均設為基板翹曲 量。 (2) 導通試驗 使用飛針檢測機(Flying pr〇be Checker)(l 116X-YC Hitester .日置電機公司製造)對3個實施例及比較例中製作 101113166 75 201247414 之半導體封裝進行經由焊錫凸塊通過半導體元件與電路美 板間之電路端子之導通之測定,設為初期值。繼而,於⑼ °C、60%之咴濕條件下處理40小時後,利用IR回焊爐(峰 值溫度:260。〇處理3次,以相同之方式測定導通,將電阻 值較初期值上升5%以上者判定為安裝時之斷線。此處,於 在初期值下產生斷線之情形時,判斷為電路製作上之異常而 不算作在内。再者,每丨個半導體封裴之測定部位為6ι處, 測定合計183處。 各符號如下所述。 ◎ :無斷線部位。 〇 :斷線部位為1〜 ]0%。 Δ :斷線部位為11 〜50%。 X : 斷線部位為51%以上。 (3)溫度循環(TC,Temprature Cycle)試驗 於60°C、60%之條件下對4個實施例及比較例中製作之半 導體封裝進行40小時處理後,利用IR回焊爐(峰值溫度: 260°C)處理3次,於大氣中,以-55°C(15分鐘)、125。(:(15 分鐘)進行500次循環處理。繼而’使用超音波影像裝置 (Hitachi Construction Machinery Finetec 公司製造 ’ FS300), 觀察半導體元件、焊錫凸塊中是否存在異常。 ◎:半導體元件、焊錫凸塊均無異常》 〇:於半導體元件及/或焊錫凸塊之一部分中觀察到龜 101113166 76 201247414 裂,但於實際應用上無問題。 △.於半導體元件及/或焊錫凸塊之一部分中觀察到龜 裂,於實際應用上存在問題。 X :半導體元件、焊錫凸塊均觀察到龜裂而無法使用。 為了確認使用本實施形態之積層板之效果,而於表$中表 示比較玻璃纖維基材層之厚度(種類)與片數相等之實施例 與比較例的基板翹曲之變化量。若玻璃纖維基材層之厚声_ 片數不同,則基板翹曲之曲率半徑不同,其結果,基板 量不同,而於比較實施例與比較例時’必需預先使該等統— 如由表5可知,實施例1〜13與對照之比較例相比,武板 翹曲量減少。 藉此,可明確實施例1〜13之積層板與比較例1〜9 又*積 層板相比,基板翹曲減輕。 又,如由表4可知,比較例1〜9中獲得之半導體封妒( 核心層之厚度越小,導通試驗中之斷線部位越多,又、田’、 /JDt 循環試驗中之半導體元件或焊錫凸塊中龜裂之產生増 接可靠性較差。另一方面,如由表3可知, 連 耳施例1〜13 中獲得之半導體封裝無導通試驗中之斷線部位或較小 而,溫度循環試驗中之半導體元件或烊錫凸塊中無龜,進 生或較少,連接可靠性優異。 ’之產 101113166 77 201247414 [表i] 樹脂清漆A 樹脂清漆B 樹脂清漆C 樹脂清漆D 樹脂清漆E 樹脂清漆F 環氧樹脂A 11.0 8.0 15.0 環氧樹脂B 12.0 3.0 2.0 環氧樹脂C 6.0 環氧樹脂D 10.8 環氧樹脂E 15.6 氰酸酯樹脂A 16.0 12.0 14.0 14.0 氰酸酯樹脂B 4.0 氰酸酯樹脂C 16.0 酚樹脂A 8.8 酴樹脂B 5.0 雙馬來醯亞胺樹脂A 20.0 6.5 苯氧基樹脂A 5.6 填充材A 60.0 65.0 40.0 65.0 65.0 填充材B 5.0 7.0 5.0 5.0 填充材C 65.0 填充材D 7.0 偶合劑A 0.2 0.2 0.2 0.2 偶合劑B 0.5 0.4 硬化觸媒A 0.2 0.1 0.2 硬化觸媒B 3.5 78 101113166 201247414 【CN&lt;】 總厚 (&quot;m) 〇 Ο vo O o Ο 〇 ο ο Ο 〇 % Ο Ο ο ο 1 _ U m rn ο m m ο m rn o (N oo m cn m ΓΛ o ΓΛ m m ΓΛ m 1 • 1 1 1 1 1 04 ο ο o ο Ο o ο ε ο ο Ο 韜 m 寸 C\ in ι〇 ro m 1 t I 1 I I -樹脂 厚度 )(//m) Os Os ο iTi »—H On os 1 1 1 1 1 I I oo (N § § 00 (Ν g g 00 CN 00 (Ν 00 (N § 00 (Ν § § S _ w 框: 发 Jd jd ja jd jd 垃 发 g jd g ~u^ ®4 •^2 ifnJ • mm4 ·&lt; U D m D m D D m cn m D D cn Ρ U P P P P Ρ •P P P P P Ρ Ρ Ρ Ρ 举 爸 启 ~g $ 發 驽 D. a. a Q. &amp; ο- α. Q. D, cu CL a. a a ο. Cu &amp;, a. a. a a a. a. a a a a &amp; Q. a 纖維基材 m in yn in &lt;n in 00 CN υΊ &lt;〇 ir&gt; 00 CN 00 &lt;N iTi in 00 cs ιη ιη IPC型 | #1015 I | #1035 I | #1280 1 1 #2319 1 | #2319 I | #1035 1 | #2319 1 1 #2319 1 | #1035 I | #1035 1 1 #1015 #1035 | #1280 1 #2319 #1035 #2319 #2319 m m ΓΛ ΓΛ m m m cn cn ΓΛ f^i — m Μ X cn cn &gt;Λ &gt;&lt; ΓΛ U^&gt; ιΛ &gt;&lt; m m ¥ Μ 〇g to »r&gt; m iTi ΓΛ iT) m ^Ti un ^r&gt; m C/3 m ^r&gt; CO \r\ m V) »r) m g S g S s g S S g S g s S g N &lt; U OQ CQ X PQ CP X &gt;&lt; N &lt; U CO X PQ PQ s $ g g H s S H H (N 〇 i 2 Ον ON w &gt; ω W W tu w W m ω ω W 附有PET膜之樹脂片 第二樹脂 層厚度 (μιη) 卜 O &lt;N On &lt;N o Vi (N &lt;N o o 1 1 1 1 1 1 1 第一樹脂 層厚度 (㈣ m v〇 CN (N κη m v〇 m &lt;n cn Ό 1 1 1 1 1 I 1 &lt; &lt; CQ &lt; c &lt; U Q ω (Xl &lt; &lt; ω &lt; &lt; ο Q 樹脂清甸 殮 飧 梭 梭 飧 飧 梭 飧 飧 * ·* * * ας urn BK: iim os; jJm ας *+7» iim ox; iim =5 iJtn ας i)tn as; Dm ας 荜 率 逛 荜 率 率 荜 荜 % Μ 荜 率 5: CN &amp; m Ph 2 Ρη CL, 00 ON Ph 〇 CL. S: CN 5: ΓΛ r*H IX ν〇 卜 欺练It was immersed in 'Swelling Dip Securigant P) for 5 minutes, and further immersed in an aqueous solution of 80 ° C (Atotech Japan, Concentrate Compact CP) for 10 minutes, and then neutralized to carry out roughening treatment. After the steps of degreasing, catalyst application and activation, an electroless copper plating film of about 0.5 〆m is formed to form an anti-electric clock layer, and a non-electrolytic copper film is used as a power supply layer to form a 10/zm copper plating pattern. Implement L/s = 5〇/5〇 to process the microcircuit of the claw. Then, after 6 minutes of annealing treatment at 2 Torr &lt; t by a hot air drying apparatus, the power supply layer was removed by rapid etching. Then, the pET film on the first resin layer side of the solder resist layer A obtained above was peeled off to overlap the first resin layer, and a vacuum pressure type laminator device was used at a temperature of 150 C, a pressure of 1 MPa, and a time of 120 seconds. Vacuum heating and pressing into 101113166 72 201247414 shape. Thereafter, the film was heat-cured at 220 ° C for 60 minutes by a hot air drying device. The pET film on the second resin layer side was peeled off. Then, blind holes (non-through holes) are formed by carbonic acid laser to expose the pads or the like on which the semiconductor elements are mounted. Finally, a non-electrolytic nickel plating layer including 3 on the circuit layer exposed from the solder resist layer A and a Q1 layer on the electroless forged gold layer thereon are formed, and the obtained substrate is cut into 50 mm&gt;;&lt; 50 mm size, to obtain a circuit board for semiconductor packaging. 5. Manufacturing of semiconductor package A semiconductor device having a solder bump (a thermoelectric power generation (TEG) wafer size of 20 mm x 20 mm and a thickness of 725 /zm) was mounted on a semiconductor by a flip chip bonding apparatus. On the circuit board for packaging. Then, after the solder bumps are melt-bonded by an infrared (IR) infrared reflow furnace, a liquid sealing resin (CRP-X4800B, manufactured by SUMITOMO BAKELITE Co., Ltd.) is filled, and the liquid sealing resin is cured to obtain a semiconductor package. . Further, the liquid sealing resin was cured under the conditions of a temperature of 150 ° C for 120 minutes. Further, the solder bump of the above-mentioned semiconductor element was formed using an error-free solder composed of Sn/Ag/Cu. (Examples 2 to 8, 12, and 13) A metal-clad laminate was produced in the same manner as in Example 1 except that the prepregs 2 to 10 were used in each of Examples 2 to 8, 12, and 13, respectively. Board, circuit board, and semiconductor package. 101113166 73 201247414 (Example 9) The PET film on both sides of each prepreg 4 was peeled off in the order of the prepreg 4, the prepreg 14, and the prepreg 4, so that the first resin layer of the prepreg 4 was A laminate with a metal foil, a circuit board, and a semiconductor package were produced in the same manner as in Example 1 except that a total of three prepregs were laminated in contact with the prepreg 14 side. (Example 10) The PET film on both surfaces of each prepreg 4 was peeled off in the order of the prepreg 4, the prepreg 14, the prepreg 14, and the prepreg 4 so that the first prepreg 4 was A laminate with a metal foil, a circuit board, and a semiconductor package were produced in the same manner as in Example 1 except that a total of four prepregs were laminated so as to be in contact with the prepreg 14 side. (Example 11) The PET film on each of the four prepreg 4 (P4) was peeled off, and a total of four prepregs were laminated so that the first resin layer of the prepreg 4 was oriented toward the center of the laminate. A laminate, a circuit board, and a semiconductor package with a metal foil were produced in the same manner as in Example 1 except for the above. (Comparative Examples 1 to 7) A laminate with a metal foil and a circuit board were produced in the same manner as in Example 1 except that each of the prepregs 11 to 17 was laminated in each of Comparative Examples 1 to 7. , semiconductor packaging. (Comparative Examples 8 and 9) 101113166 74 201247414 A metal foil-clad laminate was produced in the same manner as in Example 1 except that three or four prepregs 14 were laminated in each of Comparative Examples 8 and 9. , circuit board, semiconductor package. The following evaluations were made on the laminated plates, circuit boards, and semiconductor seals with metal cases obtained by the respective examples and comparative examples. Each evaluation and evaluation method are shown below. The results obtained are shown in Tables 3 and 4. Moreover, the amount of change in the warpage of the substrate in the examples and the comparative examples (the amount of warpage of the substrate of Comparative Example A) (the amount of warpage of the substrate in the example) is shown in Table 5 ^ (1) Subsurface curvature of the substrate The metal foil-clad laminates prepared in the examples and the comparative examples were cut in a size of 270 mm x 350 mm near the center, and the metal foil was peeled off by an etching solution, and cut into a size of 5 mm x 50 mm at intervals of 30 mm. A total of 12 samples of substrate warpage were obtained. The substrate warpage of the obtained sample was measured at room temperature using a temperature-variable laser three-dimensional measuring machine (LS200-MT100MT50: manufactured by T-TEC Co., Ltd.). The measurement range was determined at 48. In the range of mmx48 mm, a laser is applied to one side of the substrate for measurement, and the difference between the farthest point and the closest point from the distance between the laser heads is set as the amount of complication of each piece' The amount of warpage of the substrate was set. (2) The conduction test was performed using Flying pr〇be Checker (l 116X-YC Hitester. manufactured by Hioki Electric Co., Ltd.) to make 101113166 75 201247414 in three examples and comparative examples. The semiconductor package is measured by the conduction of the solder bumps through the circuit terminals between the semiconductor element and the circuit board, and is set as an initial value. Then, after being treated under (9) ° C and 60% humidity conditions for 40 hours, IR back is used. The welding furnace (peak temperature: 260. 〇 treatment 3 times, the conduction is measured in the same manner, and the resistance value is increased by 5% or more from the initial value, and it is determined as the disconnection at the time of installation. Here, the disconnection occurs at the initial value. In the case of In addition, the measurement position of each semiconductor package is 6 ι, and the total measurement is 183. Each symbol is as follows. ◎ : No break position. The position is 1 to ]0%. Δ: the broken part is 11 to 50%. X : The broken part is 51% or more. (3) The temperature cycle (TC, Temprature Cycle) is tested at 60 ° C, 60%. The semiconductor package produced in the four examples and the comparative examples was subjected to treatment for 40 hours, and then treated three times in an IR reflow furnace (peak temperature: 260 ° C) in the atmosphere at -55 ° C (15 minutes). 125. (: (15 minutes) 500 cycles were processed. Then, using an ultrasonic imaging device ("FS300" manufactured by Hitachi Construction Machinery Finetec Co., Ltd.), it was observed whether or not an abnormality occurred in the semiconductor element or the solder bump. Solder bumps are free of abnormalities. 〇: Turtles 101113166 76 201247414 are observed in one of the semiconductor components and/or solder bumps, but there is no problem in practical applications. △. In one part of semiconductor components and/or solder bumps Crack observed in There is a problem in practical use. X: Both the semiconductor element and the solder bump are cracked and cannot be used. In order to confirm the effect of using the laminated board of this embodiment, the comparison of the glass fiber base material layer is shown in Table $ The amount of change in the warpage of the substrate of the examples and the comparative examples in which the thickness (type) is equal to the number of sheets. If the thickness of the glass fiber substrate layer is different, the radius of curvature of the substrate warpage is different, and as a result, the amount of the substrate is small. In the case of the comparative examples and the comparative examples, it is necessary to make the above-mentioned systems in advance. As is apparent from Table 5, in Examples 1 to 13, the amount of warpage of the slabs was reduced as compared with the comparative examples of the comparative examples. Thereby, it was confirmed that the laminates of Examples 1 to 13 were less warped than the Comparative Examples 1 to 9 and the laminated sheets. Further, as can be seen from Table 4, the semiconductor package obtained in Comparative Examples 1 to 9 (the smaller the thickness of the core layer, the more the breakage portion in the conduction test, the semiconductor component in the field, and the /JDt cycle test) Or the solder bumps in the solder bumps have poor reliability, and on the other hand, as can be seen from Table 3, the semiconductor package obtained in the embodiments 1 to 13 has a broken portion in the non-conducting test or is small. In the temperature cycle test, there is no turtle in the semiconductor component or the bismuth tin bump, which is less or less, and has excellent connection reliability. 'Production 101113166 77 201247414 [Table i] Resin varnish A Resin varnish B Resin varnish C Resin varnish D Resin Varnish E Resin Varnish F Epoxy Resin A 11.0 8.0 15.0 Epoxy Resin B 12.0 3.0 2.0 Epoxy Resin C 6.0 Epoxy Resin D 10.8 Epoxy Resin E 15.6 Cyanate Resin A 16.0 12.0 14.0 14.0 Cyanate Ester B 4.0 Cyanide Acid ester resin C 16.0 Phenol resin A 8.8 Barium resin B 5.0 Double maleimide resin A 20.0 6.5 Phenoxy resin A 5.6 Filler A 60.0 65.0 40.0 65.0 65.0 Filling B 5.0 7.0 5.0 5.0 Filler C 65.0 Filler D 7.0 Coupler A 0.2 0.2 0.2 0.2 Coupler B 0.5 0.4 Hardener Catalyst A 0.2 0.1 0.2 Hardener Catalyst B 3.5 78 101113166 201247414 [CN&lt;] Total Thickness (&quot;m ) vo vo O o Ο 〇 ο Ο 〇 Ο Ο ο ο 1 Ο Ο 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 o ο Ο o ο ε ο ο Ο 韬m inch C\ in ι〇ro m 1 t I 1 II - resin thickness) (//m) Os Os ο iTi »—H On os 1 1 1 1 1 II oo ( N § § 00 (Ν gg 00 CN 00 (Ν 00 (N § 00 (Ν § § S _ w box: send Jd jd ja jd jd rag g jd g ~u^ ®4 •^2 ifnJ • mm4 ·&lt UD m D m DD m cn m DD cn Ρ UPPPP Ρ •PPPPP Ρ Ρ Ρ 举 举 爸 ~~g $ 发 D. a. a Q. & ο- α. Q. D, cu CL a. aa ο. Cu &, aa aa aa aaaa & Q. a fiber m in yn in &lt;n in 00 CN υΊ &lt;〇ir&gt; 00 CN 00 &lt;N iTi in 00 cs ιη ιη IPC type | #1015 I | #1035 I | #1280 1 1 #2319 1 | #2319 I | #1035 1 | #2319 1 1 #2319 1 | #1035 I | #1035 1 1 #1015 #1035 | #1280 1 #2319 #1035 #2319 #2319 mm ΓΛ ΓΛ mmm cn cn ΓΛ f^i — m Μ X cn cn &gt;Λ &gt;&lt; ΓΛ U^&gt; ιΛ &gt;&lt; mm ¥ Μ 〇g to »r&gt; m iTi ΓΛ iT) m ^Ti un ^r&gt; m C/3 m ^r&gt; CO \r\ m V) »r) mg S g S sg SS g S gs S g N &lt; U OQ CQ X PQ CP X &gt;&lt; N &lt; U CO X PQ PQ s $ gg H s SHH ( N 〇i 2 Ον ON w &gt; ω WW tu w W m ω ω W Resin sheet with PET film Second resin layer thickness (μιη) 卜O &lt;N On &lt;N o Vi (N &lt;N oo 1 1 1 1 1 1 1 thickness of the first resin layer ((iv) mv〇CN (N κη mv〇m &lt;n cn Ό 1 1 1 1 1 I 1 &lt;&lt; CQ &lt; c &lt; UQ ω (Xl &lt;;&lt; ω &lt;&lt; ο Q Resin Qingdian 殓飧 飧飧 飧飧 飧飧 * * * * * ας urn BK: ii m os; jJm ας *+7» iim ox; iim =5 iJtn ας i)tn as; Dm ας 荜 rate shopping rate 荜荜% 荜 rate 5: CN &amp; m Ph 2 Ρη CL, 00 ON Ph 〇CL. S: CN 5: ΓΛ r*H IX ν 〇 欺 欺

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99I-U0I s 201247414 鬥e&lt;】 1實施例13丨 I 0.08 I |ριο+ριο| &lt;N m 00 ◎ ◎ |實施例 0.08 1 P9+P9 I 没 ◎ ◎ 實施例11 2 P4+P4+P4+P4 寸 v〇 v〇 ◎ ◎ ίο g P4+P14+P14+P4 寸 〇〇 v〇 ◎ ◎ 實施例9 3 P4+P14+P4 CO ◎ ◎ |實施例8| g 1 P8+P8 1 (N ◎ 〇 丨實施例7| s P7+P7 CN 〇 〇 丨實施例6| 0.08 1 P6+P6 1 &lt;N s ◎ ◎ 丨倾例5| s 1 P5+P5 1 &lt;N 00 00 ◎ 〇 |雜例4| ο P4+P4 CN ss ◎ 〇 |你_3| 1 012 1 P3+P3 (N 〇 〇 |實施例2| 0.08 P2+P2 CN 00 〇 〇 1實施例11 1 0.054 1 1 Pi+Pi 1 CN a 〇 〇 核心層厚度(mm) 核心層構成 層數 基板勉曲劃/^m) 導通 TC嫩 【寸&lt;】 比較例9 寸 〇 Ρ14 + Ρ14 + Ρ14 + Ρ14 〇 〇 比較例8 cn c&gt; Ρ14 + Ρ14 + Ρ14 CO 〇 〇 比較例7 (N Ο 1 Ρ17 + Ρ17 CN m (N 〇 &lt;] 比較例6 (Ν Ο Ρ16 + Ρ16 (N 〇 &lt;1 比較例5 0.08 1 Ρ15 + Ρ15 1 CN r—^ 〇 &lt;1 比較例4 &lt;Ν Ο Ρ14 + Ρ14 (N &lt;N On 〇 &lt; 比較例3 0.12 1 Ρ13 + Ρ13 1 &lt;N 〇 &lt;1 比較例2 0.08 1 Ρ12 + Ρ12 1 (N (N as &lt;1 X 比較例1 1 0.054 1 1 pii+pn 1 &lt;N X X 核心層厚度(//m) 核心層構成 層數 基板赵曲量(//m) 導通試驗 TC試驗 實施例 13 ΓΟ ΓΠ 比較例 5 實施例 12 比較例 5 實施例 11 比較例 9 實施例 10 m 比較例 9 實施例 9 卜 比較例 8 實施例 8 σ\ 比較例 7 實施例 7 〇\ 比較例 6 實施例 6 CN 比較例 5 實施例 5 々 比較例 4 實施例 4 Os 比較例 4 實施例 3 Ο 比較例 3 實施例 2 比較例 2 實施例 1 CN 比較例 1 /—v ® 4.0 φ|丨 i 1 电s 趨s 比較對象 0009912112 201247414 本申請案主張以於2011年4月Μ日提出申請之日本專利特 願申請案2011-90469號為基礎之優先權,而將其所揭厂、 部内容併入本文中。 【圖式簡單說明】 . 上述目的、及其他目的、特徵及優點進而可藉由以下所敍述 之較佳之實施形態、及其所附隨之以下圖式而明確。 κ 圖1係表示本實施形態中之積層板之構成的剖面圖。 圖2係表示本實施形態中之積層板之製造步驟的剖面圖。 圖 剖面圖 圖3係表示本實施形態中之預浸體之製造方法的剖面回 一 4係表示本實施形態中之附有金屬落之積層板之構^成的 圖 面圖 係表示本實施形態中线有增層之積層板之構成的剖 係表示本實獅S中謂纽焊層之電路基板之構成 圖6係表示本實施形態中之增層之構成的剖面圖 圖7係表示本實施形態中之電路基板之構成的剖面圖 的剖面圖 圖9係表示本實施形態中之阻焊層之構成的剖面圖。 =1〇係表示本實施雜中之半導體封裂之構成_面圖 U係表示本實施形態中之積層板之構μ邮圖。 ^系表示本實施形態中之積層板之製造步驟的剖面圖 圖13係表示本實施形態中之積層板之構成的剖面圖。 101113166 201247414 圖14係表示本實施形態中之積層板之製造步驟的剖面圖。 圖15係表示本實施形態中之積層板之製造步驟的剖面圖。 圖16係表示本實施形態中之積層板之製造步驟的剖面圖。 圖17係表示本實施形態中之預浸體之製造方法的剖面圖。 圖18係表示本實施形態中之預浸體之製造方法的剖面圖。 圖19係表示本實施形態中之預浸體之製造方法的剖面圖。 【主要元件符號說明】 1 塗敷裝置 la 第1塗敷裝置 lb 第2塗敷裝置 2 塗敷前端部 2a 第1塗敷前端部 2b 第2塗敷前端部 3、11 纖維基材 4 樹脂清漆 5a、5b 載體材料 21 預浸體 60 真空層壓裝置 61 層壓輥 62 熱風乾燥裝置 100a、100b、100b2、100c、100c2、100c3 積層板 101 第一纖維基材層 101113166 82 201247414 101a 第二纖維基材層 102 第一樹脂層 103 第二樹脂層 104 第一預浸體 105 第三纖維基材層 105a 第四纖維基材層 106 第三樹脂層 107 第四樹脂層 108 第二預浸體 110 、 111 面 200 附有金屬箔之積層板 201 金屬箔 300 附有增層之積層板 301 第五纖維基材層 303 增層 310 增層之表面 400 電路基板 401 佈線層 403 、 405 通孔 500 附有阻焊層之電路基板 501 第六纖維基材層 503 阻焊層 101113166 83 201247414 510 阻焊層之表面 600 半導體封裝 601 半導體元件 603 凸塊 605 底部填充劑 701 第五樹脂層 702 第六樹脂層 703 第三預浸體 801 第七樹脂層 802 第八樹脂層 803 第四預浸體 A 卜 A2、A3 、A4、A5、A6、B1 中心線 D、D卜 D2、 D4、D5、D6、D7、D8、D9 距離 D3 積層板之厚度 L 塗敷間距 101113166 8499I-U0I s 201247414 斗e&lt;] 1 Example 13 丨I 0.08 I | ριο+ριο| &lt;N m 00 ◎ ◎ | Example 0.08 1 P9+P9 I ◎ ◎ Example 11 2 P4+P4+P4 +P4 inch v〇v〇◎ ◎ ίο g P4+P14+P14+P4 inch 〇〇v〇◎ ◎ Example 9 3 P4+P14+P4 CO ◎ ◎ |Example 8| g 1 P8+P8 1 (N ◎ 〇丨 Example 7| s P7+P7 CN 〇〇丨 Example 6| 0.08 1 P6+P6 1 &lt;N s ◎ ◎ 丨 例 Example 5| s 1 P5+P5 1 &lt;N 00 00 ◎ 〇| Miscellaneous 4| ο P4+P4 CN ss ◎ 〇|你_3| 1 012 1 P3+P3 (N 〇〇|Example 2| 0.08 P2+P2 CN 00 〇〇1 Example 11 1 0.054 1 1 Pi+ Pi 1 CN a 〇〇 core layer thickness (mm) core layer layer number substrate 勉 curvature / ^ m) conduction TC tender [inch &lt;] Comparative Example 9 inch 〇Ρ 14 + Ρ 14 + Ρ 14 + Ρ 14 〇〇 Comparative Example 8 Cn c&gt; Ρ14 + Ρ14 + Ρ14 CO 〇〇Comparative Example 7 (N Ο 1 Ρ17 + Ρ17 CN m (N 〇&lt;] Comparative Example 6 (Ν Ο Ρ 16 + Ρ 16 (N 〇 &lt; 1 Comparative Example 5 0.08 1 Ρ 15 + Ρ15 1 CN r—^ 〇&lt;1 Comparative Example 4 &lt;Ν Ο Ρ14 + Ρ14 (N &lt;N On 〇&lt; Comparative Example 3 0.1 2 1 Ρ13 + Ρ13 1 &lt;N 〇&lt;1 Comparative Example 2 0.08 1 Ρ12 + Ρ12 1 (N (N as &lt;1 X Comparative Example 1 1 0.054 1 1 pii+pn 1 &lt; NXX core layer thickness (/ /m) Core layer constituent layer substrate Zhaoqu amount (//m) Conduction test TC test Example 13 ΓΟ ΓΠ Comparative example 5 Example 12 Comparative example 5 Example 11 Comparative example 9 Example 10 m Comparative example 9 Example 9 Comparative Example 8 Example 8 σ\Comparative Example 7 Example 7 比较\Comparative Example 6 Example 6 CN Comparative Example 5 Example 5 々Comparative Example 4 Example 4 Os Comparative Example 4 Example 3 Ο Comparative Example 3 Example 2 Comparative Example 2 Example 1 CN Comparative Example 1 /—v ® 4.0 φ|丨i 1 Electricity s s s Comparative object 0009912112 201247414 This application claims a Japanese patent application for application on the next day of April, 2011. Based on the priority of No. 90469, the contents of the factory and its contents are incorporated herein. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features and advantages of the invention will be apparent from the appended claims appended claims κ Fig. 1 is a cross-sectional view showing the configuration of a laminated board in the present embodiment. Fig. 2 is a cross-sectional view showing a manufacturing step of the laminated board in the embodiment. FIG. 3 is a cross-sectional view showing a method of manufacturing a prepreg according to the present embodiment, showing a configuration of a laminated metal plate with a metal drop in the present embodiment. FIG. 6 is a cross-sectional view showing a configuration of a build-up layer in the present embodiment, and FIG. 7 is a cross-sectional view showing a structure of a build-up layer in the present embodiment. FIG. FIG. 9 is a cross-sectional view showing a configuration of a solder resist layer in the present embodiment. FIG. The structure of the semiconductor chip in the present embodiment is shown in Fig. U. Fig. U shows the structure of the laminated board in the present embodiment. A cross-sectional view showing a manufacturing step of the laminated board in the present embodiment. Fig. 13 is a cross-sectional view showing the configuration of the laminated board in the present embodiment. 101113166 201247414 Fig. 14 is a cross-sectional view showing a manufacturing step of the laminated board in the embodiment. Fig. 15 is a cross-sectional view showing a manufacturing step of the laminated board in the embodiment. Fig. 16 is a cross-sectional view showing a manufacturing step of the laminated board in the embodiment. Fig. 17 is a cross-sectional view showing a method of manufacturing a prepreg according to the embodiment. Fig. 18 is a cross-sectional view showing a method of manufacturing a prepreg according to the embodiment. Fig. 19 is a cross-sectional view showing a method of manufacturing a prepreg according to the embodiment. [Main component code description] 1 Coating device la First coating device lb Second coating device 2 Coating tip portion 2a First coating tip portion 2b Second coating tip portion 3, 11 Fiber substrate 4 Resin varnish 5a, 5b carrier material 21 prepreg 60 vacuum laminating device 61 laminating roller 62 hot air drying device 100a, 100b, 100b2, 100c, 100c2, 100c3 laminated plate 101 first fibrous substrate layer 101113166 82 201247414 101a second fiber base Material layer 102 first resin layer 103 second resin layer 104 first prepreg 105 third fiber base material layer 105a fourth fiber base material layer 106 third resin layer 107 fourth resin layer 108 second prepreg 110, 111 face 200 laminated board with metal foil 201 metal foil 300 laminated board with added layer 301 fifth fiber base material layer 303 build-up layer 310 surface of layered circuit 400 circuit board 401 wiring layer 403, 405 through hole 500 Solder mask circuit board 501 sixth fiber base layer 503 solder mask 101113166 83 201247414 510 solder mask surface 600 semiconductor package 601 semiconductor component 603 bump 605 bottom Charge 701 Fifth resin layer 702 Sixth resin layer 703 Third prepreg 801 Seventh resin layer 802 Eighth resin layer 803 Fourth prepreg A A2, A3, A4, A5, A6, B1 Center line D , D Bu D2, D4, D5, D6, D7, D8, D9 Distance D3 Thickness of laminate L Coating distance 101113166 84

Claims (1)

201247414 七、申請專利範圍: 1,一種積層板,其係積層有具備纖維基材層與樹脂層之複數 個預浸體而成’且於上部形成有佈線層或形成有增層者;並且 於積層方向上, '躲接近-個面祕置之第一纖維基材層之巾^線、與鄰接 ;上述第,、戴維基材層之第二纖維基材層之巾心、線的距離設 為Ό1, 將隶接近另自而配置之第三纖維基材層之中心線、與鄰接 ;述第—纖、4基材層之第四纖維基材層之中心、線的距離設 為D2, 將該積層板之厚度設為D3, 將補層板之纖維基材層之層數設為n(其中,n為2以上之 整數)時, 滿足下述式⑴及(2)之條件中之任一者: D3/n&lt;Dl ⑴ D3/n&lt;D2 (2)。 2,如申請專利範圍第丨項之積層板,其中, • 於積層方向上, v固面與上述第一纖維基材層之中心線之距離設為 D4, 將上述另—而伽L、. 、 &gt;、上述第三纖維基材層之中心線之距離設為 高足下述式⑺及⑷之條件中之任一者: 101113166 85 201247414 D4&lt;D1 (3) D5&lt;D2 (4)。 3. 如申請專利範圍第1項之積層板,其中, 於積層方向上, 上述第一纖維基材層及上述第三纖維基材層係相對於該積 層板之中心線對稱地配置。 4. 如申請專利範圍第1項之積層板,其中, 於積層方向上, 該積層板中之全部纖維基材層係相對於該積層板之中心線 對稱地配置。 5. 如申請專利範圍第1項之積層板,其中,上述纖維基材層 之層數η為2以上且6以下。 6. 如申請專利範圍第1項之積層板,其中,該積層板之厚度 為0.6 mm以下。 7. 如申請專利範圍第1項之積層板,其中,該積層板之面方 向之線膨脹係數為1 ppm/°C以上且20 ppm/°C以下。 8. 如申請專利範圍第1項之積層板,其中,於該積層板之至 少單面上形成有金屬箔。 9. 如申請專利範圍第1項之積層板,其中, 上述第一纖維基材層及上述第三纖維基材層之厚度為5 μ m以上且100 /zm以下。 10. 如申請專利範圍第1項之積層板,其中, 101113166 86 201247414 構成上述第-纖維基材層及上述第三纖維基材層之纖維基 材均為玻璃布。 ,其中, 包含第五纖維基材層之 11.如申請專利範圍第〗項之積層板 於該積層板之上述上部進而形成有 上述增層,且 於積層方向上, 五纖維基材層之 將上述一個面與上述增層中所含之上述第 中心線的距離設為D6, 心線的距離 將上述增層之表面與上述第五纖維基材層之中 設為D7時,滿足D6&gt;D7。 i 11項中任 -種電路基板,其係包含巾請專利範圍第i 一項之積層板。 13.如申請專利範圍第12項之電路基板,其中, 於該電路基板之上部進而形成有包含第六纖維基材層之阻 焊層,且 於積層方向上, 將上述㈤面或上述增層之表面與上述第六纖維基材 中心線的距離設為D8, &quot; 將上述阻焊層之表面與上述第 離設為D9時, 滿足D8&gt;D9。 六纖維基材層之中心線的距 12項之電路基 14.-種半導體封裝’其係於申請專利範圍第 101113166 87 201247414 板上搭載有半導體元件。 15. —種積層板之製造方法,其係製造積層有具備纖維基材 層與樹脂層之複數個預浸體而成,且於上部形成有佈線層或形 成有增層之積層板之方法;且包括: 第一步驟,其係準備包含上述纖維基材層於厚度方向上偏於 一側之預浸體之複數個預浸體; 第二步驟,其係以於積層方向上, 將最接近一個面而配置之第一纖維基材層之中心線、輿鄰接 於上述第一纖維基材層之第二纖維基材層之中心線的距離設 為D卜 將最接近另一面而配置之第三纖維基材層之中心線、與鄰接 於上述第三纖維基材層之第四纖維基材層之+心、線的距離設 為D2, 將該積層板之厚度設為D3, 將該積層板之纖維基材層之層數設為n(其中,η為2以上之 整數)時, 滿足下述式⑴及⑺之條件中之任一者之方式使上述複數個 預浸體重疊, D3/n&lt;Dl (1) D3/n&lt;D2 (2);及 第三步驟,其係使重疊之上述複數個預浸體成形。 16.如申請專利範㈣15項之積層板之製造方法,其中, 101113166 88 201247414 於上述第二步驟中, 以於積層方向上, 將上述一個面與上述第一纖維基材層之中心線之距離設為 D4, 將上述另一面與上述第三纖維基材層之中心線之距離設為 D5時,進而滿足下述式(3)及(4)之條件之方忒, D4&lt;D1 (3) D5&lt;D2 (4) 使上述複數個預浸體重疊。 Π_如申請專利範圍第15項之積層板之製造方法,其中, 於上述第二步驟中, 以於積層方向上, 上述第一纖維基材層及上述第三纖維基材層為相對於該積 層板之中心線分別對稱地配置之方式,使上述複數個預浸體重 疊。 18·如申請專利範圍第15項之積層板之製造方法,其中, 於上述第二步驟中, 以於積層方向上, 該積層板中之全部纖維基材層為相對於該積層板之中心線 對稱地配置之方式,使上述複數個預浸體重叠。 19.如申請糊顚第16至18射任—奴積層板之製造 方法,其中, 101113166 89 201247414 上述纖維基材層之層數η為2以上且6以下。 90 101113166201247414 VII. Patent application scope: 1. A laminated board which is formed by a plurality of prepregs having a fibrous base material layer and a resin layer and having a wiring layer formed on the upper portion or formed with a buildup layer; In the direction of the lamination, the distance between the towel core and the line of the second fiber substrate layer of the first base layer is set to be the same as that of the first fiber substrate layer. Ό1, the center line of the third fiber base material layer disposed adjacent to the other, and the distance between the center and the line of the fourth fiber base material layer of the first fiber and the fourth base material layer are set to D2, When the thickness of the laminated board is D3, and the number of layers of the fiber base material layer of the supplementary layer is n (where n is an integer of 2 or more), any of the following formulas (1) and (2) is satisfied. One: D3/n&lt;Dl (1) D3/n&lt;D2 (2). 2. A laminate according to the scope of the patent application, wherein: • in the direction of the lamination, the distance between the v-solid surface and the center line of the first fibrous substrate layer is set to D4, and the above-mentioned gamma, L. And &gt;, the distance between the center lines of the third fiber base material layer is set to any one of the following conditions (7) and (4): 101113166 85 201247414 D4 &lt; D1 (3) D5 &lt; D2 (4). 3. The laminated board according to claim 1, wherein the first fibrous base material layer and the third fibrous base material layer are symmetrically arranged with respect to a center line of the laminated sheet in the lamination direction. 4. The laminate of claim 1, wherein all of the fibrous substrate layers in the laminate are symmetrically disposed with respect to a center line of the laminate in the lamination direction. 5. The laminate according to the first aspect of the invention, wherein the number of layers η of the fibrous base material layer is 2 or more and 6 or less. 6. The laminated board of claim 1, wherein the laminated board has a thickness of 0.6 mm or less. 7. The laminated board of claim 1, wherein the laminated board has a linear expansion coefficient of 1 ppm/° C. or more and 20 ppm/° C. or less. 8. The laminate of claim 1, wherein the metal foil is formed on at least one side of the laminate. 9. The laminate according to claim 1, wherein the first fibrous base material layer and the third fibrous base material layer have a thickness of 5 μm or more and 100 /zm or less. 10. The laminate of claim 1, wherein the fiber base material constituting the first fiber base layer and the third fiber base layer is a glass cloth. The laminate comprising the fifth fibrous substrate layer. The laminate of the fifth aspect of the laminate is further formed on the upper portion of the laminate, and the layer of the five-fiber substrate is formed in the direction of the laminate. The distance between the one surface and the center line included in the buildup layer is D6, and the distance between the core lines satisfies D6 &gt; D7 when the surface of the buildup layer and the fifth fiber base material layer are D7. . A circuit board of any of the items 11 of the present invention, which comprises the laminated board of the i-th aspect of the patent application. The circuit board of claim 12, wherein a solder resist layer including a sixth fiber base material layer is further formed on an upper portion of the circuit board, and the (five) plane or the buildup layer is formed in a stacking direction The distance between the surface and the center line of the sixth fiber base material is D8, and when the surface of the solder resist layer and the first distance are set to D9, D8 &gt; D9 is satisfied. The circuit board of the center line of the six-fiber base material layer is a semiconductor element. The semiconductor package is mounted on the board of the patent application range 101113166 87 201247414. A method for producing a laminate comprising a method of laminating a plurality of prepregs including a fiber base layer and a resin layer, and forming a wiring layer or a buildup layer formed with a buildup layer; And comprising: a first step of preparing a plurality of prepregs comprising the prepreg of the fibrous substrate layer on one side in a thickness direction; and a second step, which is to be closest in the lamination direction The distance between the center line of the first fibrous base material layer disposed on one surface and the center line of the second fibrous base material layer adjacent to the first fibrous base material layer is set to be the closest to the other side. The distance between the center line of the three-fiber base material layer and the + center line of the fourth fiber base material layer adjacent to the third fiber base material layer is D2, and the thickness of the laminated plate is D3, and the laminated layer is formed. When the number of layers of the fiber base material layer of the sheet is n (where η is an integer of 2 or more), the plurality of prepregs are overlapped so as to satisfy any of the conditions of the following formulas (1) and (7), D3 /n&lt;Dl (1) D3/n&lt;D2 (2); and the third step, which is The above plurality of prepregs are formed by overlapping. 16. The method for manufacturing a laminate according to claim 15 (4), wherein 101113166 88 201247414 is in the second step, the distance between the one surface and the center line of the first fibrous substrate layer in the lamination direction When D4 is set, the distance between the other surface and the center line of the third fibrous base material layer is D5, and further satisfy the conditions of the following formulas (3) and (4), D4 &lt; D1 (3) D5 &lt; D2 (4) The plurality of prepregs are overlapped. The manufacturing method of the laminated board of claim 15, wherein in the second step, the first fibrous base material layer and the third fibrous base material layer are opposite to each other in the lamination direction The center lines of the laminate are symmetrically arranged to overlap the plurality of prepregs. 18. The method of manufacturing a laminate according to claim 15, wherein in the second step, all the fiber substrate layers in the laminate are in a stacking direction with respect to a center line of the laminate The plurality of prepregs are overlapped in a symmetric manner. 19. The method for producing a paste laminate according to the application of the paste 16th to 18th, wherein the number of layers η of the fiber base material layer is 2 or more and 6 or less. 90 101113166
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