TW201246388A - Film layer etching method and laser lithographic machine - Google Patents

Film layer etching method and laser lithographic machine Download PDF

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Publication number
TW201246388A
TW201246388A TW100149191A TW100149191A TW201246388A TW 201246388 A TW201246388 A TW 201246388A TW 100149191 A TW100149191 A TW 100149191A TW 100149191 A TW100149191 A TW 100149191A TW 201246388 A TW201246388 A TW 201246388A
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Taiwan
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laser
film layer
layer
focusing lens
laser beam
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TW100149191A
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Chinese (zh)
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TWI473168B (en
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Yu-Jen Chen
Kun-Rung Lin
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Ray Star Technology Xiamen Inc
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/361Removing material for deburring or mechanical trimming
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/064Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
    • B23K26/0648Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms comprising lenses
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/13338Input devices, e.g. touch panels
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Human Computer Interaction (AREA)
  • Mathematical Physics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laser Beam Processing (AREA)
  • Position Input By Displaying (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

A film layer etching method and a laser lithographic machine are illustrated in the present disclosure for patterning passivation layer on large-sized touch panels using laser etching. The film layer etching method includes: forming a film layer on a substrate; using laser beams to ablate a preset area of the film layer to form a patterned film layer. The laser lithographic machine includes laser devices, focusing lens groups, controller, driving motors, and a positioning platform. The laser devices emit laser beams that pass through the focusing lens groups and project onto the surface of the work-piece on the positioning platform. The fast one-step patterning process method of conducting laser etching directly on the surface of the film layer to form the required pattern without using photomasks is adopted to replace screen printing process or multistep photoetching process with photomasks thereby reduce production costs and is applicable for large-sized touch panels processing.

Description

201246388 六、發明說明: 【發明所屬之技術領域】 本發明係有關於一種蝕刻方法及光刻機,且特別是一 種應用於大尺寸觸控面板的膜層蝕刻方法及雷射光刻機。 【先前技術】 近年來,隨著觸控技術的不斷發展,觸控面板已廣泛 應用于諸如手機、個人數位助理(PDA)、遊戲機輸入介 面、電腦觸控螢幕等各種電子產品中。觸控面板與顯示面 板集成一體,通常包括透明基板及佈設於其上的導電層和 ,電線路,以及保護層。所述導電線路形成於面板上^電 層的周邊,所述賴職設於導電層及透明基板上。觸和 =板在使科需㈣接電路減合,f要將邊緣電極和^ 、的導電線路上的賴祕穿,使外接電路與面板上保 層下方的導電層建立電接觸。 、咬 ^的絲導電舰電極及導電魏上方的保護層的 I兩種.光I虫刻微影和網印。網印是孔版印刷的—種 印刷方法。網版面一般包括通孔與實體兩部分。印 壓下if財放置於預設_版上,_膏麵墨刀的擠 職面通孔處漏印至保護層上而形成圖案,如圖i 低不二罔比較簡單’所 所採= 圖形(例如線寬<200陣)。然而,其 2版不能通用,針對不_產品的 的網版。當所需圖案發生改變時,需要ί 其所印刷的保護層尺寸二,、:=蝴控面板’ 大,印刷m 大$斤使用的網版的尺寸亦變 W時不易控制整個大尺寸網版的張力的—致性,從 4/14 201246388 的網版磨損或變形就越容易了使其所^成 時的耗材成本變高。 7°卩又短,生產 -4:=即光刻’是一種圖形複印和化學额相 結合的精⑯、表面加工技術,其 予㈣相 薄膜上祕刻出*掩膜版κ在—軋化石夕或金屬 對應或者互補的幾何圖形。 薄膜的特定部分去除,最特 ’、j生產》驟將表面 4, θ§^ .α±Α 匕祜巧洗、塗布光阻層、睬 ί ,、_及_等過程,其設備所需投資^ 成太二彳^ ’同時還f ^大量的,導致生產 成本尚,生產工時長。尤其是,對於大 生產 ,二::===^ 可實現單步圖案化製程。 *,、、而九罩, 本發明所採用的技術手段是: 一種膜層細丨方法,包括以下步驟:在 膜層;採用雷射光束對所述膜層的預定區域 成圖案化膜層。 】π蚀,形 二=束通過雷射器射出,透過-組聚焦透鏡用 以“田射Μ ’亚通過—㈣器控綱述f射光 在所述膜層上的預定區域内。 又射 所述控制器通過控制聚焦透鏡的位置和抖動頻率來控 5/14 201246388 制所述雷射先束的運動方向和運動达产。 所述膜層是保護層。所述保幾厗 、 氛烧保護層。所述基板上設有導電^:了 :層4聚珍 述導電層上。_電層魏化^ (w)所 所述雷射先束使所述氧化銦錫(1 /衣肷 ’將所述導電層表面輕微繼,造成所述氧化銦錫及^^ 材料受熱氣化,使所述膜層因下層的體積膨服而被滅抬 起,從而剝離去除該膜層材料。 本發明的目的還在於提供一種雷射光刻機’益需光罩 ,採用雷射單步圖案化觸控面板的保護層表面,可用於大 尺寸觸控面板的加工。 一種雷射光刻機,包括雷射器、聚焦透鏡組、控制器 、驅動電機和定位平臺,所述雷射器發出雷射光束,該雷 射光束經過所述聚焦透鏡組投射於所述定位平臺上的工件 表面;所述控制器控制所述驅動電機的運轉狀態;所述驅 動電機連接並受控於所述控制器,並驅動電機之輸出連接 於所述聚焦透鏡組,控制所述聚焦透鏡組從而使得所述雷 射光束投射在所述工件表面的預定區域内。 所述雷射光刻機包括多個雷射器及其相應的多個所述 聚焦透鏡組。 所述聚焦透鏡組包括擴束鏡、X軸反射鏡、γ軸反射 鏡以及掃描透鏡(scan lens),所述雷射光束從雷射器發出 經所述擴束鏡擴束後,由所述X軸反射鏡和Y轴反射鏡反 射,再由所述掃描透鏡聚焦投射於所述工件表面。 所述驅動電機包括χ_γ_Ζ三軸方向的驅動電機’所述 驅動電機分別驅動所述x軸反射鏡、Υ軸反射鏡以及掃描 6/14 201246388 透鏡 所述控制器包括同步觸發模組、 掃描模組,所述同步觸發模組使定“臺^ =級和透鏡 =獅致雷刻線段的兩端刻痕 見象’使付刻痕均勻;所述聚焦調節模 :#二, 焦透鏡組來改變投射於所述工件表面的光斑=即所= 鏡掃描模組改變所述掃描透鏡抖動頻率,^ 、所水 =量密度和I虫刻區域,提雷2 精度。所糊光她斑直徑可細 本發明提供的闕㈣方法,是 嶋面形成所需圖案的方法,可用於大;寸的 有光罩的光軸 刻機,無需光罩,採用.射本發明提供的雷射光 表面,可用於大尺寸觸二二力:工觸控面板的保護層 【實施方式】 描述了面結合_與具體實财式對本料作進-步詳細 :在基:::::方严:如圖3所示’包括以下步驟:S1 預定區域itm编採时射光束騎述膜層的 雜質。其中成案化膜層;以及S3:清潔去除 光束;,聚隹;^下步驟:S20】’雷射器產生雷射 束從雷射器射岐集所述雷射光束,所述雷射光 透k組聚焦透鏡用以聚集雷射光束 7/14 201246388 ,· S203 ’將雷射光束投射於預定區域進行糊,即通局一 控制器控制所述雷射光束投射在所述膜層上的 = 。其中,所述控制器通過控制聚焦透鏡組的位置㈣動^ 率來控制所述雷射光束的運動方向和運動速度。 人 本發明的膜層姓刻方法是透過雷射光刻機來 -種雷射光刻機’如® 4所示’包括雷射器1()、聚焦透 組、控制器(圖未示)、驅動電機和定位平臺;、、二 發”束,該雷射光束經過所述聚焦透鏡組:射: =疋位平臺上工件1GG的表面,所述聚焦透鏡組包产 鏡軸反射鏡22、Y軸反射鏡& 1⑽)24,所述魏光束從雷射㈣發出 η 後’由Χ軸反射鏡22…反射鏡23反射,再由掃:二 鏡24聚焦投射於工件⑽表面;所述 ^由㈣透 電機的運轉狀態’所述驅動電機包括XYf_'所述驅動 動電機,其中X軸驅動電機31驅動 3方向的驅 驅動電機32驅動γ軸反射鏡23 擁兄22 ’ 丫轴 驅動掃描透鏡24 ;所述χ_γ_ζ三車由 電機(圖未示) 並受控於所述控制器,控制所述聚隹透^動電機均連接 射光束投射在工件⑽表面的預定區=組,使得所述雷 其中,所述控制器包括同步觸 和透鏡掃描模組,所述同步觸 使、二Ά焦調節模組 度與雷射的脈衝密度相一致,解決定==臺的移動速 時的加減速運動導致雷_刻線段的結束 過深的現象,使得刻痕均勻; =不均勻或者 所述聚焦透鏡組來改變投射於工件⑽^㈣通過調節 所述透鏡掃描模組改變掃描 t的光斑尺寸; 卄勖頻率,控制雷射器 8/14 201246388 的犯度和蝕刻區域,提高雷射蝕刻的圖案精度和定 位心度。所述雷射光束的光喊徑可小於ΙΟμιη,達到 5-10μιη。 另外,上述的雷射光刻機可以採用多個雷射頭(multi laser head),且相應的多個聚焦透鏡組可與多個雷射頭相 配合。所述雷射的波長採用紫外光(UV)波段,所述雷射 光束的光斑直徑可小於1〇μηι,達到5_10μηι。 實施例1 如圖/所示,一種觸控面板包括玻璃基板51,導電層 f和保5蔓層53,導電層52以氧化銦錫(ITO)材料製成佈 ^方:玻璃基板51表面,保護層53為二氧切層,敷設於 $電層52上。觸控面板上導電層的電極通過邊緣的導電線 連接至外。p處理裔,為了在使用時使觸控面板與外接電 路相貼合’需要絲設於邊料電線路上的保護層53 I虫穿 ’使外接電路解電層52建立電接觸。其巾,保護層53 亦可為聚矽氧烷保護層。 +本發明人通過不斷試驗和驗證,發現採用適當波長的 台射卩採用波長為266nm的雷射,可以將導電層η表面 的1T〇輕微剝钮,由於在該波長下,下層導電層52的材料 (TO) 保護層53的材料(si〇2)更容易吸收光能,使 =0叉熱氣化,造成Si02體積膨脹而被擠壓抬起被去除, /足而彔j離去除保瞍層53材料。其中,所述雷射的脈衝能量 :大於1叫/脈衝(uj/pulse)。本發明人採用波長為266細的 雷射’其脈衝能量為8μ』/脈衝,脈衝頻率為60kHZ,實現 Si〇2的剝姓同時不損傷其他層結構。如圖5所示,本實施 例中玻璃基板5丨的厚度為Q.5_左右,導電層η的厚度 9/14 201246388 約為150A,保護層53的厚度約為5〇〇 A。在雷射姓刻後, 本發明人將所試驗的樣品採用雷射測距儀(例如 1肅測距儀)’並採用3_倍的取像倍率觀測所糊區域 ’其與周邊未|虫刻區域的高度差正好等於保護層5 。試驗結果表g月,採用__定波長二 材剝離該區域的保護層材料,並能針對職刻的 ==區Γ在剝離表層材質時,不易將其底層材 、 开蝕划,從而避免引起不必要的損傷。 導電rm53圖案化處理的過程中,為了保證不會對 曰表面造成損傷,可採用以下兩種方法。其—是線 =偵測模式,採用終點偵測器偵測不同成分的物if,_旦 (、即=2即導電層52)的成分時,則停止雷射剝離 凡雀虫)的動作。例如,可採用光譜儀偵 f的光4 ’因為不同物質材料可發出不同波長及顏色二光 4 ’即可通過光譜儀來偵測物f 、則 =!可採用其他方式,如紅外職射法 ^勺=終點彳貞測。另—種方法是纟_㈣ 方 =包括以下步驟:測量保護層53的厚度所2 :伴=射的能量密度及脈衝數來確定 :、4日53的_動作’經過所計算出來⑽ 離後,停止雷射剝離的動作 层 b1勺剝 案。 』付幻保唛層53所需的圖 制本明的較佳實施例而已,並不用以限 改、等同替換、改㈣,所做的任何修 内。 、 句應匕含在本發明保護的範園之 10/14 201246388 【圖式簡單說明】 圖一是現有的絲網印刷的裝置結構示意圖; 圖二是現有的光蝕刻微影的流程圖; 圖三是本發明膜層蝕刻方法的流程圖; 圖四是本發明雷射光刻機的工作原理示意圖; 圖五是本發明實施例〗的結構示意圖。 【主要元件符號說明】 10雷射器 21擴束鏡 22 X軸反射鏡 23 Y軸反射鏡 24掃描透鏡 31 X軸驅動電機 32 Y轴驅動電機 51玻璃基板 52導電層 53保護層 100工件 S1至S3,S201至S203流程圖步驟說明 11/14201246388 VI. Description of the Invention: [Technical Field] The present invention relates to an etching method and a lithography machine, and more particularly to a film etching method and a laser lithography machine applied to a large-sized touch panel. [Prior Art] In recent years, with the continuous development of touch technology, touch panels have been widely used in various electronic products such as mobile phones, personal digital assistants (PDAs), game console input interfaces, and computer touch screens. The touch panel is integrated with the display panel and generally includes a transparent substrate and a conductive layer and an electrical circuit disposed thereon, and a protective layer. The conductive line is formed on the periphery of the panel, and the lands are disposed on the conductive layer and the transparent substrate. The contact = board is used to make the circuit (4) connected to the circuit, f to wear the edge electrode and the conductive line on the circuit, so that the external circuit and the conductive layer below the layer on the panel to establish electrical contact. , the bite of the wire conductive ship electrode and the protective layer above the conductive Wei I. Light I insect lithography and screen printing. Screen printing is a method of printing by stencil printing. The screen layout generally includes two parts: a through hole and an entity. Under the printing pressure, if money is placed on the default _ version, _ paste ink knife squeezing face through the hole to print on the protective layer to form a pattern, as shown in Figure i is relatively simple 所 采 ' (eg line width < 200 array). However, its version 2 cannot be generic, for the screen version of the product. When the desired pattern changes, it is necessary to print the size of the protective layer 2, : = = control panel 'large, printing m large $ kg used the size of the screen is also W is not easy to control the entire large size screen The tension of the tension, the easier it is to wear or deform the screen from 4/14 201246388, so that the cost of consumables becomes higher. 7°卩 is short, production-4:=Photolithography is a kind of fine 16 surface processing technology combining graphic copying and chemical amount, which is secretly engraved on the film of the (4) phase film. Evening or metal corresponding or complementary geometry. The specific part of the film is removed, and the most special ', j production' will be surface 4, θ§^.α±Α 洗 洗, coating photoresist layer, 睬ί, _ and _, etc. ^ 成太二彳^ 'At the same time f ^ a large number, resulting in production costs, production hours. In particular, for large production, two::===^ can implement a single-step patterning process. The technical means employed in the present invention are: a film fine-tuning method comprising the steps of: forming a film layer on a predetermined region of the film layer by using a laser beam in a film layer; 】 π eclipse, shape 2 = beam emitted through the laser, through the group of focusing lens for "field Μ 亚 亚 — — ( ( ( ( ( ( ( 器 器 f f f f f f f f f f f f f f f f f f f f f The controller controls the movement direction and movement of the laser beam by the control of the position and the jitter frequency of the focus lens. The film layer is a protective layer. The protection layer is protected by a fire. a layer is provided on the substrate: a layer 4 is stacked on the conductive layer. The first layer of the laser is used to make the indium tin oxide (1 / 肷 ' The surface of the conductive layer is slightly followed, causing the indium tin oxide and the material to be heated and vaporized, so that the film layer is lifted up due to the volume expansion of the lower layer, thereby peeling off the film layer material. The object of the invention is to provide a laser lithography machine, which uses a laser single-step pattern to planarize the surface of the touch panel and can be used for processing large-sized touch panels. A laser lithography machine including a laser a focusing lens group, a controller, a driving motor, and a positioning platform, the laser emitting a laser beam that is projected through the focusing lens group onto a surface of the workpiece on the positioning platform; the controller controls an operating state of the driving motor; the driving motor is connected and controlled by the control And an output of the driving motor coupled to the focusing lens group, the focusing lens group being controlled such that the laser beam is projected in a predetermined area of the surface of the workpiece. The laser lithography machine includes a plurality of lasers And a corresponding plurality of said focusing lens groups. The focusing lens group comprises a beam expander mirror, an X-axis mirror, a γ-axis mirror and a scan lens, the laser beam being emitted from the laser After being expanded by the beam expander, it is reflected by the X-axis mirror and the Y-axis mirror, and then focused by the scan lens and projected onto the surface of the workpiece. The drive motor includes a driving motor of χ_γ_Ζ three-axis direction. The drive motor respectively drives the x-axis mirror, the x-axis mirror, and the scan 6/14 201246388 lens. The controller includes a synchronous trigger module, a scan module, and the synchronous trigger module. Determining "Taiwan ^ = Level and Lens = Both ends of the lion-induced stencil line are visible" to make the scribe even; the focus adjustment mode: #二, the focal lens group to change the spot projected on the surface of the workpiece = ie = mirror scan module changes the scanning lens jitter frequency, ^, water = volume density and I insect engraved area, mine 2 accuracy. It is a method for forming a desired pattern on a kneading surface, which can be used for a large-sized optical axis engraving machine with a reticle, without a reticle, and the laser light surface provided by the invention can be used for large-sized touch two-force: Protective layer of touch panel [Embodiment] Describes the combination of surface and specific concrete form. The details are as follows: In the base::::: square: as shown in Figure 3 'includes the following steps: S1 is scheduled When the area itm is edited, the light beam rides on the impurity of the film layer. Wherein the film layer is formed; and S3: cleaning and removing the light beam; and collecting the film; the following step: S20] 'The laser beam is generated by the laser beam, and the laser beam is collected from the laser beam, and the laser beam is transmitted through the laser beam. The group of focusing lenses is used to concentrate the laser beam 7/14 201246388, and S203' projects the laser beam to a predetermined area for paste, that is, the controller controls the projection of the laser beam on the film layer. Wherein, the controller controls the moving direction and the moving speed of the laser beam by controlling the position (4) of the focus lens group. The film layer surname method of the present invention is a laser lithography machine as shown by the laser lithography machine as shown in the '4', including the laser 1 (), the focus through group, the controller (not shown), the drive a motor and a positioning platform; and a second beam, the laser beam passing through the focusing lens group: shot: = the surface of the workpiece 1GG on the clamping platform, the focusing lens group including the mirror axis mirror 22, the Y-axis reflection Mirror & 1(10)) 24, the Wei beam is emitted from the laser (four) η and then 'reflected by the 反射-axis mirror 22...the mirror 23, and then focused by the second mirror 24 onto the surface of the workpiece (10); The operating state of the motor includes the driving motor including XYf_', wherein the X-axis driving motor 31 drives the driving drive motor 32 in the three directions to drive the γ-axis mirror 23 to drive the scanning lens 24; The χ_γ_ζ three-car is controlled by the motor (not shown) and controlled by the controller, and the control of the concentrating motor is connected to a predetermined area=group of the beam projected on the surface of the workpiece (10), so that the ram is The controller includes a synchronous touch lens scanning module, the synchronous touch The degree of the second focus adjustment module is consistent with the pulse density of the laser, and the acceleration/deceleration motion when the moving speed of the == stage is caused to cause the end of the Ray_line segment to be too deep, so that the score is uniform; Or the focusing lens group is changed to project on the workpiece (10)^(4) by adjusting the lens scanning module to change the spot size of the scanning t; 卄勖 frequency, controlling the violent and etching area of the laser 8/14 201246388, improving the lightning The pattern precision and the positioning center of the etched etch. The laser beam of the laser beam may be smaller than ΙΟμιη, reaching 5-10 μηη. In addition, the above laser lithography machine may use a plurality of laser heads, and A plurality of corresponding focusing lens groups may cooperate with a plurality of laser heads. The wavelength of the laser beam is in a ultraviolet (UV) wavelength band, and the spot diameter of the laser beam may be less than 1 〇μηι, reaching 5_10 μηι. 1 As shown in the figure, a touch panel includes a glass substrate 51, a conductive layer f and a vine layer 53. The conductive layer 52 is made of an indium tin oxide (ITO) material: a surface of the glass substrate 51, and a protective layer. 53 is a dioxygen layer, It is disposed on the electric layer 52. The electrodes of the conductive layer on the touch panel are connected to the outside through the conductive wires of the edge. The p-processed person, in order to fit the touch panel with the external circuit during use, requires the wire to be disposed on the edge material. The protective layer 53 I on the wire line makes the electrical connection of the external circuit de-energized layer 52. The towel, the protective layer 53 can also be a polyoxyalkylene protective layer. + The inventors have continuously tested and verified that it is appropriate to adopt The wavelength of the laser is 266 nm, and the surface of the conductive layer η can be slightly stripped, because at this wavelength, the material of the underlying conductive layer 52 (TO) protective layer 53 (si〇2) It is easier to absorb the light energy, so that the heat of the yoke is vaporized, causing the volume of the SiO 2 to expand and being lifted and removed, and the material of the protective layer 53 is removed. Wherein, the pulse energy of the laser is greater than 1 call/pulse (uj/pulse). The inventors have used a laser having a wavelength of 266 to have a pulse energy of 8 μ′/pulse and a pulse frequency of 60 kHZ to realize the peeling of Si〇2 without damaging other layer structures. As shown in Fig. 5, in the present embodiment, the thickness of the glass substrate 5 is about Q.5_, the thickness of the conductive layer η is 9/14 201246388, and the thickness of the protective layer 53 is about 5 〇〇A. After the laser surname, the inventors used the laser range finder (for example, 1 finder) to observe the sample area and observed the paste area with a magnification of 3 times. The height difference of the engraved area is exactly equal to the protective layer 5. Test results table g month, using __ fixed wavelength two materials to peel off the protective layer material of the area, and can be used for the job of the == area 剥离 when peeling the surface material, it is not easy to cut the backing material, to avoid causing Unnecessary damage. In the process of patterning the conductive rm53, in order to ensure that the surface of the crucible is not damaged, the following two methods can be used. It is the line = detection mode. When the end point detector is used to detect the composition of different components, if it is (ie, = 2 is the conductive layer 52), the action of the laser stripping is stopped. For example, the spectrometer can be used to detect the light 4 'because different materials can emit different wavelengths and colors of two light 4 ' can be detected by the spectrometer f, then =! can be used in other ways, such as the infrared job method = End point guess. Another method is 纟 _ (four) square = including the following steps: measuring the thickness of the protective layer 53 2: accompanied by the energy density of the shot and the number of pulses to determine: 4, 53 _ action 'after calculation (10) , stop the stripping of the action layer b1 of the laser stripping. The preferred embodiment of the present invention is not limited to the modifications, equivalent replacements, and modifications (4). The sentence should be included in the protection of the invention. 10/14 201246388 [Simplified illustration of the drawing] Figure 1 is a schematic view of the structure of the existing screen printing device; Figure 2 is a flow chart of the existing photo-etching lithography; The third is a flow chart of the film etching method of the present invention; FIG. 4 is a schematic view showing the working principle of the laser lithography machine of the present invention; and FIG. 5 is a schematic structural view of the embodiment of the present invention. [Main component symbol description] 10 laser 21 beam expander 22 X-axis mirror 23 Y-axis mirror 24 scan lens 31 X-axis drive motor 32 Y-axis drive motor 51 glass substrate 52 conductive layer 53 protective layer 100 workpiece S1 to S3, S201 to S203 flowchart step description 11/14

Claims (1)

201246388 七、申請專利範圍: L 一種膜層蝕刻方法,包括以下步驟: 在基板上形成一膜層;以及 採用雷射光束對該膜層的預定區域進行燒蝕,形成 圖案化膜層。 7 2. 如申請專利範圍第1項所述的膜層_方法,其中所 述雷射光束通過雷射器射出,透過—組聚焦 ,集雷射光束,並通過-控制器控制所述雷射光束投 射在該膜層上的預定區域内。 3. 4· 5. 6. 如申請專利範圍第2項所述賴層_方法,並中今 控制器通過控制郷焦透鏡組的位置轉= 制所述雷㈣束的運動方向和運動速度。㈣羊來控 如申請專職圍第丨項所述的膜層_方法,其 述雷射的波長採用紫外光波段。 如申請專利範圍第4項所述賴料财法,其中所 述雷射波長為266nm的紫外光雷射。 如申請專利範圍第4項所述賴層_方法,其 述雷射的脈衝能量不大於16μ』/脈衝。 、 如申請專職圍第1項所述賴層㈣方法,其中* 膜層係二氧化矽保護層或聚矽氧烷保護層。 9. 如申請專職,丨項所述的闕邮^法,其中戶 迷基板上設有-導電層,賴層覆設於該導電層上。 如申請專職11第8項⑽㈣層料枝 導電層係以氧化銦錫材料製成。 ’、° 如申請專職圍帛1項所述賴層㈣方法,其卜 方法更包括-終點偵測步驟,於進行雷射燒餘過程: 12/14 10. 201246388 偵測該膜層的終點位置。 11. 如申請專利範圍第1項所述的膜層蝕刻方法,其中該 方法在所述雷射光束進行燒蝕前,更包括一測量膜層 厚度的步驟和一計算所需剝離時間的步驟,用以計算 所述雷射進行燒蝕的時間。 12. —種雷射光刻機,包括:雷射器、聚焦透鏡組、控制 器、驅動電機和定位平臺,所述雷射器發出雷射光束 ,該雷射光束經過所述聚焦透鏡組投射於所述定位平 臺上的工件表面;所述控制器控制所述驅動電機的運 轉狀態;所述驅動電機連接並受控於所述控制器,所 述驅動電機之輸出連接於所述聚焦透鏡組,控制所述 聚焦透鏡組從而使得所述雷射光束投射在所述工件表 面的預定區域内。 13. 如申請專利範圍第12項所述的雷射光刻機,其中該雷 射光刻機包括多個雷射器及其相應的多個所述聚焦透 鏡組。 14. 如申請專利範圍第12項所述的雷射光刻機,其中所述 聚焦透鏡組包括擴束鏡、X轴反射鏡、Y軸反射鏡以及 掃描透鏡,所述雷射光束從雷射器發出經所述擴束鏡 擴束後,由所述X軸反射鏡和Y軸反射鏡反射,再由 所述掃描透鏡聚焦投射於所述工件表面。 15. 如申請專利範圍第14項所述的雷射光刻機,其中所述 驅動電機包括X-Y-Z三軸方向的驅動電機,所述驅動 電機分別驅動所述X轴反射鏡、Y軸反射鏡以及掃描 透鏡。 16. 如申請專利範圍第12項所述的雷射光刻機,其中所述 13/14 201246388 控制器包括同步觸發模組、聚焦調節模組和透鏡掃描 模組,所述同步觸發模組使定位平臺的移動速度與雷 射的脈衝密度相一致;所述聚焦調節模組通過調節所 述聚焦透鏡組來改變投射於所述工件表面的光斑尺寸 ;所述透鏡掃描模組改變所述掃描透鏡抖動頻率,控 制所述雷射器的能量密度和#刻區域。 17.如申請專利範圍第16項所述的雷射光刻機,其中所述 雷射光束的光斑直徑小於1 ΟμίΏ。 14/14201246388 VII. Patent application scope: L A film etching method comprises the steps of: forming a film layer on a substrate; and ablating a predetermined region of the film layer by using a laser beam to form a patterned film layer. [2] 2. The film layer method of claim 1, wherein the laser beam is emitted through a laser, transmitted through a group of focuss, a laser beam is collected, and the laser is controlled by a controller. The beam is projected into a predetermined area on the film layer. 3. 4· 5. 6. As claimed in the second paragraph of the patent application, the controller controls the position of the beam and the speed of movement of the beam by controlling the position of the focus lens group. (4) The sheep is controlled. For the application of the film layer method described in the full-scale article, the wavelength of the laser is in the ultraviolet band. For example, in the patent application method of claim 4, the laser light having a laser wavelength of 266 nm is used. As claimed in the fourth aspect of the patent application, the laser energy of the laser is not more than 16 μ′/pulse. For example, the application of the full-layer sub-paragraph (4) of the first layer, wherein the film layer is a protective layer of germanium dioxide or a protective layer of polyoxyalkylene. 9. If applying for a full-time job, the method described in the above-mentioned item is to provide a conductive layer on the substrate of the household, and the layer is coated on the conductive layer. For example, applying for full-time 11 item 8 (10) (four) layer of the conductive layer is made of indium tin oxide material. ', ° If you apply for a full-time cofferdam 1 method (4), the method includes a - endpoint detection step for the laser burn process: 12/14 10. 201246388 Detecting the end position of the film . 11. The film etching method according to claim 1, wherein the method further comprises a step of measuring a film thickness and a step of calculating a required peeling time before the laser beam is ablated, Used to calculate the time during which the laser is ablated. 12. A laser lithography machine comprising: a laser, a focusing lens group, a controller, a driving motor, and a positioning platform, the laser emitting a laser beam, the laser beam being projected through the focusing lens group a surface of the workpiece on the positioning platform; the controller controls an operating state of the driving motor; the driving motor is connected and controlled by the controller, and an output of the driving motor is coupled to the focusing lens group, The focusing lens group is controlled such that the laser beam is projected within a predetermined area of the workpiece surface. 13. The laser lithography machine of claim 12, wherein the laser lithography machine comprises a plurality of lasers and a plurality of the plurality of said focusing lens groups. 14. The laser lithography machine of claim 12, wherein the focusing lens group comprises a beam expander mirror, an X-axis mirror, a Y-axis mirror, and a scanning lens, the laser beam from the laser After being expanded by the beam expanding mirror, the beam is reflected by the X-axis mirror and the Y-axis mirror, and then focused by the scanning lens and projected onto the surface of the workpiece. 15. The laser lithography machine of claim 14, wherein the drive motor comprises an XYZ three-axis drive motor that drives the X-axis mirror, the Y-axis mirror, and the scan, respectively. lens. 16. The laser lithography machine of claim 12, wherein the 13/14 201246388 controller comprises a synchronous trigger module, a focus adjustment module, and a lens scanning module, wherein the synchronous trigger module enables positioning The moving speed of the platform is consistent with the pulse density of the laser; the focus adjustment module changes the spot size projected on the surface of the workpiece by adjusting the focusing lens group; the lens scanning module changes the scanning lens jitter Frequency, controlling the energy density and #刻 regions of the laser. 17. The laser lithography machine of claim 16, wherein the laser beam has a spot diameter of less than 1 ΟμίΏ. 14/14
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI648669B (en) * 2013-02-21 2019-01-21 英商萬佳雷射有限公司 Method of forming an electrode structure for a capacitive touch sensor
US10203817B2 (en) 2013-02-21 2019-02-12 M-Solv Ltd. Method for forming an electrode structure for a capacitive touch sensor

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102830586B (en) * 2011-06-17 2014-12-10 深圳莱宝高科技股份有限公司 Mask device and manufacturing method thereof
CN102968241B (en) * 2012-12-24 2015-06-10 江西联创电子股份有限公司 Method for fabricating OGS glass with cover layer
CN103801838B (en) * 2014-01-28 2016-01-20 华中科技大学 The wide laser galvanometer scanning fast etching method of a kind of modified line
US20160184926A1 (en) * 2014-12-30 2016-06-30 Suss Microtec Photonic Systems Inc. Laser ablation system including variable energy beam to minimize etch-stop material damage
CN105138176A (en) * 2015-09-09 2015-12-09 广西和金光电有限公司 Method for processing touch screen
CN105117066B (en) * 2015-09-16 2018-10-30 业成光电(深圳)有限公司 Touch panel, the manufacturing method of touch panel and laser etching device
CN105810306A (en) * 2016-04-27 2016-07-27 芜湖安瑞激光科技有限公司 Flexible transparent film having novel electrode structure and preparation method flexible transparent film
CN110554529B (en) * 2018-10-10 2022-08-16 邝永彪 Light control laminate, processing method, and processing method for double-layer etching light control laminate
KR102331375B1 (en) * 2020-08-12 2021-12-02 영 패스트 옵토일렉트로닉스 씨오., 엘티디. Method for manufacturing large-scale touch sensing pattern
CN114093574B (en) * 2021-11-22 2024-03-05 无锡变格新材料科技有限公司 Preparation method of conductive film and touch module

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5364493A (en) * 1993-05-06 1994-11-15 Litel Instruments Apparatus and process for the production of fine line metal traces
US6671034B1 (en) * 1998-04-30 2003-12-30 Ebara Corporation Microfabrication of pattern imprinting
WO2000060668A1 (en) * 1999-04-07 2000-10-12 Siemens Solar Gmbh Device and method for removing thin layers on a support material
CN1315148C (en) * 2003-09-01 2007-05-09 铼宝科技股份有限公司 Electrode substrate for Z-D display
DE10341807B4 (en) * 2003-09-10 2007-08-16 Schreiner Group Gmbh & Co. Kg Label and material web and method for its production
CN201760706U (en) * 2010-10-15 2011-03-16 武汉吉事达激光技术有限公司 Touch screen ito film laser etching device
CN202114400U (en) * 2011-04-27 2012-01-18 瑞世达科技(厦门)有限公司 Laser stepper

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI648669B (en) * 2013-02-21 2019-01-21 英商萬佳雷射有限公司 Method of forming an electrode structure for a capacitive touch sensor
US10203817B2 (en) 2013-02-21 2019-02-12 M-Solv Ltd. Method for forming an electrode structure for a capacitive touch sensor
US10421157B2 (en) 2013-02-21 2019-09-24 M-Solv Ltd. Method for forming an electrode structure for a capacitive touch sensor

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