TW201245312A - Resin paste, solar cell, method for manufacturing solar cell, resin film, and semiconductor device - Google Patents

Resin paste, solar cell, method for manufacturing solar cell, resin film, and semiconductor device Download PDF

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TW201245312A
TW201245312A TW101111081A TW101111081A TW201245312A TW 201245312 A TW201245312 A TW 201245312A TW 101111081 A TW101111081 A TW 101111081A TW 101111081 A TW101111081 A TW 101111081A TW 201245312 A TW201245312 A TW 201245312A
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resin
polar solvent
solvent
paste
heat
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Toshiyasu AKIYOSHI
Masahiro Kawakami
Takuya Imai
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Hitachi Chemical Co Ltd
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Abstract

A resin paste which contains: a mixed solvent that contains a first polar solvent (A1) and a second polar solvent (A2) having a boiling point lower than the boiling point of the first polar solvent (A1) at a mass ratio of from 6:4 to 9:1; a heat-resistant resin (B) that is soluble in the mixed solvent at room temperature; and a heat-resistant resin (C) that is soluble in the first polar solvent (A1) but insoluble in the second polar solvent (A2) and the mixed solvent at room temperature. The resin paste is obtained by dispersing the heat-resistant resin (C) in a solution that contains the mixed solvent and the heat-resistant resin (B).

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201245312 六、發明說明: 【發明所屬之技術領域】 本發明係關於樹脂糊、使用該樹脂糊之太陽能電池之 製造方法及以該方法製造之太陽能電池、樹脂膜以及具備 該樹脂膜之半導體裝置。 【先前技術】 耐熱性及機械性質優異之聚醯亞胺樹脂等之樹脂,於 電子領域中’已使用作爲半導體元件之表面保護膜、層間 絕緣膜或應力緩和材料。近幾年來,作爲該等用途中所用 之樹脂膜之像形成方法,已著眼於不需要曝光 '顯像或蝕 刻等複雜步驟之網板印刷法。 於網板印刷法中,作爲構成例如基底樹脂、塡料及溶 劑之成分係使用具有觸變性之樹脂糊。於樹脂糊中,作爲 用以賦予觸變性之塡料,大多使用二氧化矽微粒子或聚醯 亞胺微粒子。 然而’含有該等塡料之樹脂糊經加熱乾燥時,會於塡 料界面間殘留多數空隙或氣泡。因此,由該樹脂糊形成之 樹脂膜之膜強度及電絕緣性尙不充分。 鑒於此等問題,例如於專利文獻1中,揭示有使用將 加熱時與基底樹脂及溶劑相溶之有機塡料(可溶性塡料)混 合於基底樹脂及溶劑中而成之樹脂糊,形成樹脂圖型。且 ,專利文獻2中,亦揭示有爲了對上述樹脂糊賦予低彈性 化等特性而添加低彈性塡料或液狀橡膠等之技術。 -5- 201245312 [先前技術文獻] 專利文獻 專利文獻1 :特開平2-2 89646號公報 專利文獻2 :國際公開第0 1 /66645號 【發明內容】 [發明欲解決之課題] 然而,使用以往樹脂糊所得之樹脂膜,會有因低彈性 塡料等之非溶解性塡料之凝集物、肥大化而殘留之有機塡 料、其他異物等導致樹脂膜表面留有凹凸,而使表面平坦 性降低。樹脂膜表面之凹凸,於樹脂膜形成後之配線形成 時,會有於配線發生鍍敷異常或斷線等之虞。 因此,本發明之目的係提供可使用於網板印刷而可形 成具有精密解像度且表面平坦性優異之樹脂膜的樹脂糊、 > 使用該樹脂糊之太陽能電池之製造方法及以該方法製造之 太陽能電池、樹脂膜及具備該樹脂膜之半導體裝置。 [解決課題之手段] 亦即本發明提供一種樹脂糊,其係包含:以質量比6 :4〜9: 1含有第一極性溶劑(A1)及具有比該第一極性溶 劑(A1)之沸點還低之沸點之第二極性溶劑(A2)的混合溶劑 、室溫中可溶於混合溶劑的耐熱性樹脂(B)、及室溫中可 溶於第一極性溶劑(A1)但不溶於第二極性溶劑(A2)且不溶 於混合溶劑的耐熱性樹脂(C);而耐熱性樹脂(C)係經分散 201245312 於含有混合溶劑及耐熱性樹脂(B)的溶液中。 藉由使第一極性溶劑(A1)及第二極性溶劑(A2)之質量 比爲6 : 4〜9 : 1,而可獲得於樹脂糊難以產生塌邊、印刷 作業性極高之流動性。藉此,可獲得可使用於網板印刷之 樹脂糊。同時,依據該樹脂糊,由於在樹脂糊中作爲塡料 而作用之耐熱性樹脂(C)之溶解度於樹脂膜形成時上升, 故可形成表面平坦性優異且具有精密解像度之樹脂膜。 此處,就可提高樹脂糊之網板印刷性之方面而言,本 發明之樹脂糊之第一極性溶劑(A 1)之沸點與第二極性溶劑 (A2)之沸點差較好爲1〇〜l〇〇°C。 且,耐熱性樹脂(B)及耐熱性樹脂(C)較好分別獨立爲 選自聚醯胺樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂,或 ,聚醯亞胺樹脂及聚醯胺醯亞胺樹脂之前驅物之至少一種 。藉此,可獲得耐熱性及機械性質優異之樹脂膜。 且,分散於上述溶液中之耐熱性樹脂(C)亦可爲平均 粒徑爲5 0 μιη以下之粒子狀。 本發明又提供太陽能電池之製造方法及以該方法製造 之太陽能電池,該製造方法包含將上述之樹脂糊網板印刷 於具有負電極與正電極之基材之電極側面上的步驟、及以 1 00〜45 (TC加熱乾燥已網板印刷之樹脂糊的步驟。由本發 明之方法製造之太陽能電池由於樹脂膜表面平坦性優異, 故配線之鍍敷異常或斷線等得以減低,因而信賴性優異。 再者,本發明提供樹脂膜,其係藉由包含將上述之樹 脂糊網板印刷於基材上之步驟及以100〜450 °C加熱已網板 201245312 印刷之樹脂糊之步驟的方法而形成者,且表面粗度爲2μπι 以下。 進而本發明提供具備上述記載之樹脂膜之半導體裝置 。本發明之半導體裝置由於具備本發明之樹脂膜,故配線 之鍍敷異常或斷線等得以減低,因而信賴性優異。 [發明效果] 依據本發明,可提供可使用於網板印刷而可形成具有 精密解像度且表面平坦性優異之樹脂膜的樹脂糊、使用該 樹脂糊之太陽能電池之製造方法及以該方法製造之太陽能 電池、樹脂膜及具備該樹脂膜之半導體裝置。 【實施方式】 以下,依據情況邊參考圖式邊對本實施形態之樹脂糊 、使用該樹脂糊之太陽能電池之製造方法及以該方法製造 之太陽能電池、樹脂膜、以及具備該樹脂膜之半導體裝置 加以說明,但本發明並不限定於此。又,圖式的尺寸比例 亦可與實際尺寸之比例不同。 <樹脂糊> 首先,針對構成本實施形態之樹脂糊之成分加以說明 。本實施形態之樹脂糊包含以質量比6 : 4〜9 : 1含有第 —極性溶劑(A 1)及具有比該第一極性溶劑(A 1 )之沸點還低 之沸點之第二極性溶劑(A2)的混合溶劑、室溫中可溶於第 201245312 —極性溶劑(A 1)與第二極性溶劑(A2)的混合溶劑之耐熱性 樹脂(B)、及室溫中可溶於第一極性溶劑(A 1)但不溶於第 二極性溶劑(A2)且不溶於第一極性溶劑(A 1 )與第二極性溶 劑(A2)的混合溶劑之耐熱性樹脂(C)。此處,本說明書中 所謂「室溫」爲25°C。 由於耐熱性樹脂(B)在室溫下可溶於第一極性溶劑 (A1)與第二極性溶劑(A2)的混合溶劑,耐熱性樹脂(C)在室 溫下不溶於第一極性溶劑(A1)與第二極性溶劑(A2)的混合 溶劑,故樹脂糊中,耐熱性樹脂(C)係分散於第一極性溶 劑(A1)、第二極性溶劑(A2)及耐熱性樹脂(B)之混合溶劑中 而作爲塡料發揮作用。藉此,尤其是可將樹脂糊之觸變値 調整至可將樹脂糊使用於網板印刷。再者,若樹脂糊加熱 至使耐熱性樹脂(C)溶解之溫度,則耐熱性樹脂(C)溶解, 塡料消失。藉此,賦予精密解像度之同時,可提高樹脂膜 表面之平坦性。 至於第一極性溶劑(A 1)及第二極性溶劑(A2),舉例有 例如二乙二醇單甲醚、二乙二醇單乙醚、三乙二醇單甲醚 、三乙二醇單乙醚、四乙二醇單甲醚、四乙二醇單乙醚等 之聚醚醇系溶劑;二乙二醇二甲醚、二乙二醇二乙醚、二 乙二醇二丙醚、二乙二醇二丁醚、三乙二醇二甲醚、三乙 二醇二乙醚、三乙二醇二丙醚、三乙二醇二丁醚' 四乙二 醇二甲醚、四乙二醇二乙醚、四乙二醇二丙醚、四乙二醇 二丁醚等之醚系溶劑;二甲基亞颯、二乙基亞颯、二甲基 諷、環戊颯等之含硫系溶劑:乙酸乙酯、乙酸丁酯、乙酸 -9- 201245312 纖溶劑、乙基纖溶劑乙酸酯、丁醯纖溶劑乙酸酯等之酯系 溶劑;甲基乙基酮、甲基異丁基酮、環己酮、苯乙酮等酮 系溶劑;N -甲基吡咯烷酮、二甲基乙醯胺、二甲基甲醯胺 、1,3_ 二甲基- 3,4,5,6-四氫·2(1Η)-嘧啶酮、1,3 -二甲基-2-咪唑啶酮等之含氮系溶劑;甲苯、二甲苯等之芳香族烴系 溶劑;r-丁內酯、r-戊內酯、7-己內酯、r·庚內酯、 α -乙醯基-r-丁內酯、ε-己內酯等之內酯系溶劑;丁醇 、辛醇、乙二醇、丙三醇等之醇系溶劑;酚、甲酚、二甲 酚等之酚系溶劑等。 第一極性溶劑(Α1)及第二極性溶劑(Α2)之組合只要從 該等溶劑中依據耐熱性樹脂(Β)及耐熱性樹脂(C)之種類適 當選擇使用即可。 至於第一極性溶劑(A 1)較好舉例爲Ν-甲基吡咯烷酮、 二甲基乙醯胺、二甲基甲醯胺、1,3-二甲基-3,4,5,6-四氫-2(H)-嘧啶酮、1,3-二甲基-2-咪唑啶酮等之含氮系溶劑; 二甲基亞颯 '二乙基亞颯、二甲基亞颯、二乙基亞颯、二 甲基颯、環戊颯等之含硫系溶劑;r-丁內酯、r-戊內酯 、r-己內酯、r-庚內酯、α -乙醯基-r-丁內酯、ε-己 內酯等之內酯系溶劑:甲基乙基酮、甲基異丁基酮、環己 酮、苯乙酮等酮系溶劑;丁醇、辛醇、乙二醇、丙三醇等 之醇系溶劑等。 後述之耐熱性樹脂(Β)及耐熱性樹脂(C)分別獨立爲選 自聚醯胺樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂,或, 聚醯亞胺樹脂及聚醯胺醯亞胺樹脂之前驅物之至少一種時 -10- 201245312 ’作爲第一極性溶劑(a 1)最好爲r -丁內酯。 至於第二極性溶劑(A2)較好舉例爲二乙二醇二甲醚、 二乙二醇二乙醚、二乙二醇二丙醚、二乙二醇二丁酸、三 乙一醇一甲酸、三乙二醇二乙酸、三乙二醇二丙醚、三乙 二醇二丁醚、四乙二醇二甲醚、四乙二醇二乙酸、四乙二 醇二丙醚、四乙二醇二丁醚等之醚系溶劑;二乙二醇單甲 醚、二乙二醇單乙醚、三乙二醇單甲醚、三乙二醇單乙醚 、四乙二醇單甲醚、四乙二醇單乙醚等之聚醚醇系溶劑; 乙酸乙酯、乙酸丁酯、乙酸纖溶劑、乙基纖溶劑乙酸酯、 丁醯纖溶劑乙酸酯等之酯系溶劑等。 後述之耐熱性樹脂(B)及耐熱性樹脂(c)分別獨立爲選 自聚醯胺樹脂、聚醯亞胺樹脂、聚醯胺醢亞胺樹脂,或, 聚醯亞胺樹脂及聚醯胺醯亞胺樹脂之前驅物之至少一種時 ’作爲第二極性溶劑(A 2)較好爲聚醚醇系溶劑或酯系溶劑 〇 自提高樹脂糊之網板印刷性之觀點而言,本實施形態 之樹脂糊之第一極性溶劑(A1)之沸點與第二極性溶劑(A2) 之沸點差較好爲10〜100 °C,更好爲10 °C〜50 °C,最好爲 10°C〜30°C。且,第一極性溶劑(A1)與第二極性溶劑(A2) 兩者之沸點,自可增長網板印刷時之樹脂糊可使用時間之 觀點而言。較好爲l〇〇°C以上,更好爲150°C以上。 耐熱性樹脂(B)及耐熱性樹脂(C)較好分別獨立爲選自 聚醯胺樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂,或,聚 醯亞胺樹脂及聚醯胺醯亞胺樹脂之前驅物之至少一種。至 -11 - 201245312 於聚醯胺樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂,或, 聚醯亞胺樹脂及聚醯胺醯亞胺樹脂之前驅物,舉例有藉由 使例如芳香族、脂肪族或脂環式二胺化合物與具有2〜4 個羧基之多元羧酸反應所得者。所謂聚醯亞胺樹脂及聚醯 胺醯亞胺樹脂之前驅物,亦指經脫水閉環形成聚醯亞胺樹 脂或聚醯胺醯亞胺樹脂之脫水閉環前之物質的聚醯胺酸。 且,耐熱性樹脂(C)較好於例如60°C以上(較好60〜200°C ,更好100〜180°C )加熱時,可溶於上述混合溶劑中。 至於芳香族、脂肪族或脂環式二胺化合物,舉例有具 有伸芳基、可具有不飽和鍵之伸烷基、或可具有不飽和鍵 之伸環烷基或該等組合之基之二胺化合物。該等基亦可透 過碳原子、氧原子、硫原子、砂原子或組合該等原子之基 鍵結。又,鍵結於伸烷基之碳骨架上之氫原子可經氟原子 取代。由耐熱性及機械強度之觀點而言,較好爲芳香族二 胺。 至於具有2〜4個羧基之多元羧酸,舉例有二羧酸或 其反應性酸衍生物、三羧酸或其反應性酸衍生物、四羧酸 二酐。該等化合物亦可爲於芳基或環內可具有交聯構造或 不飽合鍵之環烷基上鍵結有羧基之二羧酸、三羧酸或該等 之反應性酸衍生物、或於芳基或環內可具有交聯構造或不 飽合鍵之環烷基上鍵結有羧基之四羧酸二酐,該二羧酸、 三羧酸或該等之反應性酸衍生物以及四羧酸二酐亦可透過 單鍵或透過碳原子、氧原子、硫原子、矽原子或組合該等 原子之基鍵結。又,鍵結於伸烷基之碳骨架上之氫原子可 -12- 201245312 經氟原子取代。由耐熱性及機械強度之觀點而言,該等化 合物中較好爲四羧酸二酐。芳香族、脂肪族或脂環式二胺 化合物與具有2〜4個羧基之多元羧酸之組合可依據反應 性等而適當選擇。 反應可不使用溶劑或可在有機溶劑存在下進行。反應 溫度較好爲25 t〜2 5 0 °C,反應時間可依據批式規模、所 採用之反應條件等而適當選擇。 使聚醯亞胺樹脂前驅物或聚醯胺醯亞胺樹脂前驅物脫 水閉環成爲聚醯亞胺樹脂或聚醯胺醯亞胺樹脂之方法亦無 特別限制,可使用一般方法。可使用例如於常壓或減壓下 藉由加熱而脫水閉環之熱閉環法、在觸媒存在或不存在下 使用乙酸酐等之脫水劑之化學閉環法等。 熱閉環法較好邊將脫水反應產生之水除去至系統外邊 進行。此時藉由在80〜400 °C,較好100〜250 °C下加熱反 應液而進行。此時,亦可並用如苯、甲苯、二甲苯等之可 與水共沸之溶劑,與水共沸而去除。 化學閉環法較好在化學脫水劑存在下,於0〜1 20°C, 較好1 〇〜80°c反應。至於化學脫水劑,較好使用例如乙酸 酐 '丙酸酐、丁酸酐、苯甲酸酐等之酸酐、二環己基碳二 醯亞胺等之碳二醯亞胺化合物等。此時,較好倂用吡啶、 異喹琳、三甲胺' 三乙胺、胺基吡啶、咪唑等之促進環化 反應之物質。化學脫水劑相對於二胺化合物之總量使用90 〜600莫耳% ’促進環化反應之物質相對於二胺化合物總 量使用4〇〜300莫耳%。且,亦可使用亞磷酸三苯酯、亞 -13- 201245312 磷酸三環己酯、磷酸三苯酯、磷酸、五氧化磷等之磷化合 物、硼酸、無水硼酸等之硼化合物等之脫水觸媒。 以脫水反應完成醯亞胺化之反應液注入於大爲過量之 對上述第一極性溶劑(A1)及第二極性溶劑(A2)具有相溶性 且對於耐熱性樹脂(B)及(C)爲弱溶劑之甲醇等之低級醇、 水或該等之混合物等之溶劑中,獲得樹脂沉澱物,將其過 濾’藉由使溶劑乾燥,可獲得聚醯亞胺樹脂或聚醯胺醯亞 胺樹脂。就減低殘存之離子性雜質等而言,較好爲熱閉環 法。 可依據耐熱性樹脂(B)及耐熱性樹脂(C)之種類,決定 較佳之第一極性溶劑(A 1 )及第二極性溶劑(a 2 )之種類。第 —極性溶劑(A1)及第二極性溶劑(A2)之較佳組合(混合溶劑 )舉例有例如下述(a)、(b)兩種。 (a)第一極性溶劑(Al) : N-甲基吡咯烷酮、二甲基乙醯 胺等之上述含氮系溶劑;二甲基亞颯等之上述含硫系溶劑 ;T-丁內酯等之上述內酯系溶劑;二甲酚等之上述酚系 溶劑,及 第二極性溶劑(A2):二乙二醇二甲醚等之上述醚系溶 劑:環己酮等之上述酮系溶劑;丁基溶纖劑乙酸酯等之上 述酯系溶劑:丁醇等之上述醇系溶劑;二甲苯等之上述芳 香族烴系溶劑之組合。 (b)第一極性溶劑(A1):四乙二醇二甲醚等之上述醚系 溶劑:環己酮等之上述酮系溶劑,及第二極性溶劑(A2): 丁基溶纖劑乙酸酯、乙酸乙酯等之上述酯系溶劑;丁醇等 -14 - 201245312 之上述醇系溶劑;二乙二醇單乙醚等之上述聚醚醇系溶劑 :二甲苯等之上述芳香族烴系溶劑之組合。 (a)型的混合溶劑中適用之耐熱性樹脂(B)及耐熱性樹 脂(C)之組合,舉例爲例如下述者。 耐熱性樹脂(B) _·具有以下述式(1)〜(1 0)表示之構造 單位之至少一種之樹脂,及 耐熱性樹脂(C):具有以下述式(1 1)〜(19)表示之構造 單位之至少一種之樹脂之組合。 [化1][Technical Field] The present invention relates to a resin paste, a method for producing a solar cell using the resin paste, and a solar cell, a resin film, and a semiconductor device including the resin film produced by the method. [Prior Art] A resin such as a polyimide resin excellent in heat resistance and mechanical properties has been used as a surface protective film, an interlayer insulating film or a stress relieving material for a semiconductor element in the field of electronics. In recent years, as a method of forming an image of a resin film used in such applications, attention has been paid to a screen printing method which does not require exposure to complicated steps such as 'development or etching. In the screen printing method, a thixotropy resin paste is used as a component constituting, for example, a base resin, a coating, and a solvent. In the resin paste, as the material for imparting thixotropy, cerium oxide microparticles or polyimide microparticles are often used. However, when the resin paste containing the materials is dried by heating, many voids or bubbles remain between the interfaces of the material. Therefore, the film strength and electrical insulating properties of the resin film formed of the resin paste are insufficient. In view of such a problem, for example, in Patent Document 1, it is disclosed that a resin paste obtained by mixing an organic mash (soluble mash) which is compatible with a base resin and a solvent during heating in a base resin and a solvent is used to form a resin pattern. type. Further, Patent Document 2 discloses a technique of adding a low elastic coating or a liquid rubber to impart properties such as low elasticity to the resin paste. -5-201245312 [PRIOR ART DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PATENT DOCUMENT PRIOR ART The resin film obtained by the resin paste may have irregularities on the surface of the resin film due to agglomerates of non-soluble materials such as low-elastic materials, organic materials remaining after being enlarged, and other foreign matters, thereby causing surface flatness. reduce. When the wiring after the formation of the resin film is formed, the unevenness on the surface of the resin film may cause abnormal plating or disconnection of the wiring. Accordingly, an object of the present invention is to provide a resin paste which can be used for screen printing to form a resin film having excellent resolution and excellent surface flatness, > a method for producing a solar cell using the resin paste, and a method for producing the same using the method A solar cell, a resin film, and a semiconductor device including the resin film. [Means for Solving the Problem] The present invention provides a resin paste comprising: a first polar solvent (A1) at a mass ratio of 6:4 to 9:1 and a boiling point higher than the first polar solvent (A1) a mixed solvent of a second polar solvent (A2) having a low boiling point, a heat resistant resin (B) soluble in a mixed solvent at room temperature, and a first polar solvent (A1) soluble in a room temperature but insoluble in the first The bipolar solvent (A2) is insoluble in the heat-resistant resin (C) of the mixed solvent; and the heat-resistant resin (C) is dispersed in 201245312 in a solution containing the mixed solvent and the heat-resistant resin (B). By setting the mass ratio of the first polar solvent (A1) to the second polar solvent (A2) to 6:4 to 9:1, it is possible to obtain a fluidity in which the resin paste is less likely to collapse and the printing workability is extremely high. Thereby, a resin paste which can be used for screen printing can be obtained. At the same time, the solubility of the heat-resistant resin (C) acting as a coating material in the resin paste rises during the formation of the resin film, so that a resin film having excellent surface flatness and excellent resolution can be formed. Here, in terms of improving the screen printing property of the resin paste, the boiling point difference between the boiling point of the first polar solvent (A1) of the resin paste of the present invention and the second polar solvent (A2) is preferably 1〇. ~l〇〇°C. Further, the heat resistant resin (B) and the heat resistant resin (C) are preferably each independently selected from the group consisting of a polyamide resin, a polyimide resin, a polyamide resin, or a polyimine resin and a poly At least one of the precursors of the amidoxime resin. Thereby, a resin film excellent in heat resistance and mechanical properties can be obtained. Further, the heat-resistant resin (C) dispersed in the above solution may have a particle shape having an average particle diameter of 50 μm or less. The present invention further provides a method for manufacturing a solar cell and a solar cell manufactured by the method, the method comprising the steps of: printing a resin paste on a side surface of a substrate having a negative electrode and a positive electrode, and 00 to 45 (Step of heat-drying the resin paste of the screen printing by TC. The solar cell manufactured by the method of the present invention is excellent in surface flatness of the resin film, so that plating abnormality or disconnection of the wiring is reduced, and thus reliability is excellent. Furthermore, the present invention provides a resin film by a method comprising the steps of printing the above-mentioned resin paste on a substrate and heating the resin paste printed on the stencil 201245312 at 100 to 450 °C. Further, the present invention provides a semiconductor device including the above-described resin film. The semiconductor device of the present invention includes the resin film of the present invention, so that plating abnormality or disconnection of the wiring can be reduced. Therefore, the reliability is excellent. [Effect of the Invention] According to the present invention, it is possible to provide a screen with a precision solution that can be used for screen printing. A resin paste of a resin film having excellent surface flatness, a method for producing a solar cell using the resin paste, a solar cell produced by the method, a resin film, and a semiconductor device including the resin film. [Embodiment] Hereinafter, depending on the case A resin paste of the present embodiment, a method for producing a solar cell using the resin paste, a solar cell produced by the method, a resin film, and a semiconductor device including the resin film will be described with reference to the drawings, but the present invention is not The size ratio of the pattern may be different from the ratio of the actual size. <Resin paste> First, the components constituting the resin paste of the present embodiment will be described. The resin paste of the present embodiment contains the mass. Ratio 6 : 4 to 9 : 1 mixed solvent containing a first polar solvent (A 1 ) and a second polar solvent (A2) having a boiling point lower than the boiling point of the first polar solvent (A 1 ), at room temperature It is soluble in the heat-resistant resin (B) of the mixed solvent of the polar solvent (A 1) and the second polar solvent (A2) in the 201245312, and is soluble in the first at room temperature. The solvent (A1) is insoluble in the second polar solvent (A2) and is insoluble in the heat resistant resin (C) of the mixed solvent of the first polar solvent (A1) and the second polar solvent (A2). The "room temperature" in the specification is 25 ° C. Since the heat resistant resin (B) is soluble in a mixed solvent of the first polar solvent (A1) and the second polar solvent (A2) at room temperature, the heat resistant resin (C) Is insoluble in a mixed solvent of the first polar solvent (A1) and the second polar solvent (A2) at room temperature, so that the heat resistant resin (C) is dispersed in the first polar solvent (A1) and the second in the resin paste. In the mixed solvent of the polar solvent (A2) and the heat-resistant resin (B), it acts as a coating material, whereby the thixotropy of the resin paste can be adjusted so that the resin paste can be used for screen printing. In addition, when the resin paste is heated to a temperature at which the heat resistant resin (C) is dissolved, the heat resistant resin (C) is dissolved and the mash disappears. Thereby, the precision of the surface of the resin film can be improved while imparting a precise resolution. As the first polar solvent (A 1) and the second polar solvent (A2), for example, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, triethylene glycol monomethyl ether, and triethylene glycol monoethyl ether are exemplified. a polyether alcohol solvent such as tetraethylene glycol monomethyl ether or tetraethylene glycol monoethyl ether; diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dipropyl ether, diethylene glycol Dibutyl ether, triethylene glycol dimethyl ether, triethylene glycol diethyl ether, triethylene glycol dipropyl ether, triethylene glycol dibutyl ether 'tetraethylene glycol dimethyl ether, tetraethylene glycol diethyl ether, An ether solvent such as tetraethylene glycol dipropyl ether or tetraethylene glycol dibutyl ether; a sulfur-containing solvent such as dimethyl hydrazine, diethyl hydrazine, dimethyl hydrazine or cyclopentanyl: ethyl acetate Ester, butyl acetate, acetic acid-9-201245312 fiber solvent, ethyl fiber solvent acetate, butyl phthalate solvent acetate ester solvent; methyl ethyl ketone, methyl isobutyl ketone, cyclohexyl Ketone solvents such as ketone and acetophenone; N-methylpyrrolidone, dimethylacetamide, dimethylformamide, 1,3-3-dimethyl-3,4,5,6-tetrahydro-2 1Η)-pyrimidinone, 1,3 -dimethyl-2-mi a nitrogen-containing solvent such as ketone or the like; an aromatic hydrocarbon solvent such as toluene or xylene; r-butyrolactone, r-valerolactone, 7-caprolactone, r·heptanolactone, α-ethenyl group a lactone solvent such as -r-butyrolactone or ε-caprolactone; an alcohol solvent such as butanol, octanol, ethylene glycol or glycerin; a phenol system such as phenol, cresol or xylenol; Solvents, etc. The combination of the first polar solvent (Α1) and the second polar solvent (Α2) may be appropriately selected from the solvents according to the types of the heat resistant resin (Β) and the heat resistant resin (C). As the first polar solvent (A 1 ), preferred are Ν-methylpyrrolidone, dimethylacetamide, dimethylformamide, 1,3-dimethyl-3,4,5,6-tetra. a nitrogen-containing solvent such as hydrogen-2(H)-pyrimidinone or 1,3-dimethyl-2-imidazolidinone; dimethyl sulfonium 'diethyl fluorene, dimethyl hydrazine, and diethyl a sulfur-containing solvent such as quinone, dimethyl hydrazine or cyclopentanyl; r-butyrolactone, r-valerolactone, r-caprolactone, r-heptanolactone, α-ethenyl-r a lactone solvent such as butyrolactone or ε-caprolactone: a ketone solvent such as methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone or acetophenone; butanol, octanol and ethylene An alcohol solvent such as an alcohol or glycerin. The heat-resistant resin (Β) and the heat-resistant resin (C) described later are each independently selected from the group consisting of a polyamide resin, a polyimide resin, a polyamide resin, or a polyimide resin and a polyamide. When at least one of the precursors of the quinone imine resin is -10- 201245312 'The first polar solvent (a 1) is preferably r-butyrolactone. The second polar solvent (A2) is preferably exemplified by diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dipropyl ether, diethylene glycol dibutyric acid, triethylene glycol monocarboxylic acid, and the like. Ethylene glycol diacetic acid, triethylene glycol dipropyl ether, triethylene glycol dibutyl ether, tetraethylene glycol dimethyl ether, tetraethylene glycol diacetic acid, tetraethylene glycol dipropyl ether, tetraethylene glycol An ether solvent such as butyl ether; diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, tetraethylene glycol monomethyl ether, tetraethylene glycol A polyether alcohol-based solvent such as diethyl ether; an ester solvent such as ethyl acetate, butyl acetate, acetic acid fiber solvent, ethyl fiber solvent acetate or butyl hydrazine solvent acetate. The heat resistant resin (B) and the heat resistant resin (c) described later are each independently selected from the group consisting of a polyamide resin, a polyimide resin, a polyamide resin, or a polyimide resin and a polyamide. When at least one of the precursors of the quinone imine resin is used, the second polar solvent (A 2 ) is preferably a polyether alcohol solvent or an ester solvent, and the present embodiment is improved from the viewpoint of improving the screen printing property of the resin paste. The boiling point difference between the boiling point of the first polar solvent (A1) and the second polar solvent (A2) of the resin paste of the form is preferably from 10 to 100 ° C, more preferably from 10 ° C to 50 ° C, most preferably 10 °. C ~ 30 ° C. Further, the boiling points of both the first polar solvent (A1) and the second polar solvent (A2) are from the viewpoint of the usable time of the resin paste at the time of screen printing. It is preferably l 〇〇 ° C or more, more preferably 150 ° C or more. The heat resistant resin (B) and the heat resistant resin (C) are preferably independently selected from the group consisting of polyamine resins, polyimine resins, polyamidoximine resins, or polyimine resins and polyamines. At least one of the precursors of the quinone imine resin. To -11 - 201245312, in the case of polyamine resin, polyimine resin, polyamidimide resin, or polyamidene resin and polyamidimide resin precursor, by way of example, for example A result of reacting an aromatic, aliphatic or alicyclic diamine compound with a polycarboxylic acid having 2 to 4 carboxyl groups. The term "polyimine" resin and the precursor of the polyamidimide resin also refers to a polylysine which is formed by dehydration ring closure to form a polyimine resin or a polyamidoximine resin. Further, the heat resistant resin (C) is preferably soluble in the above mixed solvent when it is heated, for example, at 60 ° C or higher (preferably 60 to 200 ° C, more preferably 100 to 180 ° C). As the aromatic, aliphatic or alicyclic diamine compound, for example, an alkyl group having an extended aryl group, an alkyl group which may have an unsaturated bond, or a stretched alkyl group which may have an unsaturated bond or a combination of these groups may be exemplified. Amine compound. The groups may also be bonded through a carbon atom, an oxygen atom, a sulfur atom, a sand atom or a combination of the atoms. Further, a hydrogen atom bonded to a carbon skeleton of an alkyl group may be substituted with a fluorine atom. From the viewpoint of heat resistance and mechanical strength, an aromatic diamine is preferred. As the polycarboxylic acid having 2 to 4 carboxyl groups, a dicarboxylic acid or a reactive acid derivative thereof, a tricarboxylic acid or a reactive acid derivative thereof, or a tetracarboxylic dianhydride can be exemplified. The compound may also be a dicarboxylic acid, a tricarboxylic acid or a reactive acid derivative having a carboxyl group bonded to a cycloalkyl group which may have a crosslinked structure or a non-saturated bond in the aryl group or the ring, or An aryl group or a tetracarboxylic dianhydride having a carboxyl group bonded to a cycloalkyl group having a crosslinked structure or a non-saturated bond, a dicarboxylic acid, a tricarboxylic acid or the reactive acid derivative and a tetracarboxylic acid The acid dianhydride can also be bonded through a single bond or through a carbon atom, an oxygen atom, a sulfur atom, a helium atom or a combination of such atoms. Further, the hydrogen atom bonded to the carbon skeleton of the alkylene group may be substituted with a fluorine atom by -12-201245312. From the viewpoint of heat resistance and mechanical strength, tetracarboxylic dianhydride is preferred among the compounds. The combination of an aromatic, aliphatic or alicyclic diamine compound and a polycarboxylic acid having 2 to 4 carboxyl groups can be appropriately selected depending on the reactivity and the like. The reaction can be carried out without using a solvent or in the presence of an organic solvent. The reaction temperature is preferably from 25 t to 250 ° C, and the reaction time can be appropriately selected depending on the batch size, the reaction conditions employed, and the like. The method of dehydrating the polyimide imide resin precursor or the polyamidimide resin precursor to form a polyimine resin or a polyamidoximine resin is also not particularly limited, and a general method can be used. For example, a thermal ring closure method in which dehydration and ring closure by heating under normal pressure or reduced pressure, a chemical ring closure method using a dehydrating agent such as acetic anhydride in the presence or absence of a catalyst, or the like can be used. The thermal closed loop method preferably removes the water produced by the dehydration reaction to the outside of the system. At this time, it is carried out by heating the reaction solution at 80 to 400 ° C, preferably 100 to 250 ° C. In this case, a solvent which can be azeotroped with water such as benzene, toluene or xylene may be used in combination and removed by azeotropy with water. The chemical ring closure method is preferably carried out at 0 to 1 20 ° C, preferably 1 Torr to 80 ° C in the presence of a chemical dehydrating agent. As the chemical dehydrating agent, for example, an acid anhydride such as acetic anhydride, propionic anhydride, butyric anhydride or benzoic anhydride, or a carbodiimide compound such as dicyclohexylcarbodiimide or the like is preferably used. In this case, a substance which promotes the cyclization reaction such as pyridine, isoquineline, trimethylamine 'triethylamine, aminopyridine or imidazole is preferably used. The chemical dehydrating agent is used in an amount of from 90 to 600 mol% relative to the total amount of the diamine compound. The substance which promotes the cyclization reaction is used in an amount of from 4 to 300 mol% based on the total amount of the diamine compound. Further, a dehydration catalyst such as a triphenyl phosphite, a tricyclohexyl phosphate such as sub--13-201245312, a phosphorus compound such as triphenyl phosphate, phosphoric acid or phosphorus pentoxide, or a boron compound such as boric acid or anhydrous boric acid may be used. . The reaction solution in which the hydrazine imidization is completed by the dehydration reaction is injected in a large excess to the first polar solvent (A1) and the second polar solvent (A2), and is compatible with the heat resistant resins (B) and (C). In a solvent such as a weak solvent such as methanol or water such as methanol or the like, a resin precipitate is obtained and filtered. By drying the solvent, a polyimide resin or a polyimide resin can be obtained. . In order to reduce residual ionic impurities and the like, a thermal closed loop method is preferred. The type of the preferred first polar solvent (A 1 ) and the second polar solvent (a 2 ) can be determined depending on the type of the heat resistant resin (B) and the heat resistant resin (C). A preferred combination (mixed solvent) of the first-polar solvent (A1) and the second polar solvent (A2) is exemplified by, for example, the following two types (a) and (b). (a) First polar solvent (Al): the above nitrogen-containing solvent such as N-methylpyrrolidone or dimethylacetamide; the above-mentioned sulfur-containing solvent such as dimethyl hydrazine; T-butyrolactone; The lactone solvent; the phenol solvent such as xylenol; and the ketone solvent such as the second solvent (A2): the ether solvent such as diethylene glycol dimethyl ether: cyclohexanone; The above ester solvent such as butyl cellosolve acetate: the above alcohol solvent such as butanol; or a combination of the above aromatic hydrocarbon solvents such as xylene. (b) First polar solvent (A1): the above ether solvent such as tetraethylene glycol dimethyl ether: the above ketone solvent such as cyclohexanone, and the second polar solvent (A2): butyl cellosolve acetate And the above-mentioned ester solvent such as ethyl acetate; the above alcohol solvent such as butanol or the like; - the above polyether alcohol solvent such as diethylene glycol monoethyl ether; and the above aromatic hydrocarbon solvent such as xylene; combination. The combination of the heat resistant resin (B) and the heat resistant resin (C) which are suitable for the mixed solvent of the type (a) is, for example, the following. Heat-resistant resin (B) - a resin having at least one structural unit represented by the following formulas (1) to (10), and a heat-resistant resin (C) having the following formula (1 1) to (19) A combination of resins representing at least one of the structural units. [Chemical 1]

式(1)中,X 表示-ch2-、-〇-、-co-、-so2-或以下述 式(a)〜⑴表示之基,式⑴中,P爲1〜100之整數。 15- 201245312In the formula (1), X represents -ch2-, -〇-, -co-, -so2- or a group represented by the following formulas (a) to (1), and in the formula (1), P is an integer of from 1 to 100. 15- 201245312

-16- 201245312-16- 201245312

式(2)中,R1及R2分別爲氫原子或碳數1〜6之烴基 ,且可互爲相同或不同。X與式(1)中之X相同。 [化4]In the formula (2), R1 and R2 are each a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, and may be the same or different from each other. X is the same as X in the formula (1). [Chemical 4]

式(3)中,Μ爲以下述式(c)、(h)、(i)或⑴表示之基, 式(i)中,p爲1〜100之整數。 -17- 201245312In the formula (3), Μ is a group represented by the following formula (c), (h), (i) or (1), and in the formula (i), p is an integer of from 1 to 100. -17- 201245312

-18- 201245312 式(5)中,X與式(1)之X相同。 [化8]-18- 201245312 In the formula (5), X is the same as X of the formula (1). [化8]

式(6)中,R3及R4分別爲甲基、乙基、丙基或苯基, 可互爲相同或不同,X與式(1)之X相同。 [化9]In the formula (6), R3 and R4 are each a methyl group, an ethyl group, a propyl group or a phenyl group, and may be the same or different from each other, and X is the same as X of the formula (1). [Chemistry 9]

[化 10][化10]

式(8)中,X爲0或2,X與式(1)之X相同。 [化11]In the formula (8), X is 0 or 2, and X is the same as X of the formula (1). [11]

-19- 201245312 [化 12]-19- 201245312 [Chem. 12]

式(1 1)中,Y爲以下述式(a)、(C)或(h)表示之基。 [化 14]In the formula (1 1), Y is a group represented by the following formula (a), (C) or (h). [Chem. 14]

-20- 201245312 [化 15]-20- 201245312 [Chem. 15]

式(12)中,Y與式(11)之Y相同。且,於*之部分互相 鍵結(以下亦同)。In the formula (12), Y is the same as Y of the formula (11). Moreover, the parts of * are bonded to each other (the same applies hereinafter).

[化 17][Chem. 17]

式(14)中,Ζ 爲-CH2-、-0-、-CO-、-S02-或以下述式 (a)或(d)表示之基。 -21 - 201245312 [化 18]In the formula (14), Ζ is -CH2-, -0-, -CO-, -S02- or a group represented by the following formula (a) or (d). -21 - 201245312 [Chem. 18]

[化 20][Chem. 20]

式(16)中,Z與式(14)之Z相同。 [化 21]In the formula (16), Z is the same as Z of the formula (14). [Chem. 21]

-22- 201245312 [化 22]-22- 201245312 [Chem. 22]

[化 24][Chem. 24]

式(2 0)中’ X與式(1)之X相同,^及m分別獨立表示 1以上之整數。η與m之比(n/m)較好爲8〇/2〇〜30/70,更 好爲 70/30〜50/50 。 上述組合中’較好作爲第一極性溶劑(A丨)係使用內酯 系溶劑或含氮系溶劑,作爲第二極性溶劑(A 2)系使用醚系 溶劑或酯系溶劑,作爲耐熱性樹脂係使用具有以式(1) 表示之構造單位之樹脂,作爲耐熱性樹脂(C)係使用具有 式(20)或式(16)表示之構造單位之樹脂。 適用於(b)型之混合溶劑中之耐熱性樹脂(B)及耐熱性 -23- 201245312 樹脂(C)之組合,舉例有例如下述者。 耐熱性樹脂(B):具有以下述式(2 1)及(22)表示之構造 單位之至少一種之樹脂,或具有以上述式(6)表示之構造單 位之聚矽氧烷醯亞胺,及 耐熱性樹脂(C):具有以上述式(1)表示之構造單位(但 X爲表示下述式(a)或(b)表示之基者)之聚醚醯胺醯亞胺, 或具有以上述式(5)〜(9)表示之構造單位(但上述式(5)、 (6)、(8)中之X表示下述式(a)之基之情況除外)之至少一 種之聚醯亞胺之組合。 [化 25]In the formula (20), 'X is the same as X of the formula (1), and ^ and m each independently represent an integer of 1 or more. The ratio of η to m (n/m) is preferably from 8〇/2〇 to 30/70, more preferably from 70/30 to 50/50. In the above combination, it is preferred to use a lactone solvent or a nitrogen-containing solvent as the first polar solvent (A), and an ether solvent or an ester solvent as the second polar solvent (A 2) as a heat resistant resin. A resin having a structural unit represented by the formula (1) is used, and a resin having a structural unit represented by the formula (20) or the formula (16) is used as the heat-resistant resin (C). The combination of the heat resistant resin (B) and the heat resistance -23-201245312 (C) in the mixed solvent of the type (b) is exemplified by, for example, the following. Heat-resistant resin (B): a resin having at least one structural unit represented by the following formulas (2 1) and (22), or a polyoxyalkylene quinone imine having a structural unit represented by the above formula (6), And a heat-resistant resin (C): a polyether amidoxime which has a structural unit represented by the above formula (1) (but X represents a base represented by the following formula (a) or (b)), or has At least one of the structural units represented by the above formulas (5) to (9) (except for the case where X in the above formulas (5), (6), and (8) represents a group of the following formula (a)) A combination of quinones. [Chem. 25]

[化 26][Chem. 26]

_r5—木 〒H3 ch3_r5—木木 H3 ch3

式(22)中,Z1 爲·〇-、-CO- ⑴表示之基。R5及R6分別爲J; -、-C0-或下述式⑷、(e)、⑴或 分別爲以下述式(m)或(η)表示之基 -24- 201245312 ,可互爲相同或不同。r爲1〜100之整數。 [化 27] CH34ICH3 \1/In the formula (22), Z1 is a group represented by 〇- and -CO-(1). R5 and R6 are each J; -, -C0- or the following formula (4), (e), (1) or the group -24-201245312 represented by the following formula (m) or (η), respectively, which may be the same or different from each other . r is an integer from 1 to 100. [化27] CH34ICH3 \1/

H3.LH3c1sIC - ο F3IF3H31H3H31H3οιιοϋο οϋοοΗ—ο CISIC ⑻ \^/H3.LH3c1sIC - ο F3IF3H31H3H31H3οιιοϋο οϋοοΗ—ο CISIC (8) \^/

\n/ /IV\n/ /IV

[.化 28][. 28]

-25- 201245312 [化 29]-25- 201245312 [Chem. 29]

0— (b) Ο一 (a) cf3 調製樹脂糊時之原料投入順序並未特別限制。例如可 一次混合上述樹脂糊之原料,或亦可先使第一極性溶劑 (A1)及第二極性溶劑(A2)混合,於該混合溶劑中混合耐熱 性樹脂(B),隨後,對於第一極性溶劑(A1)、第二極性溶 劑(A2)及耐熱性樹脂(B)之混合溶液中添加耐熱性樹脂(C) 〇 較好上述樹脂糊之原料混合物,係於第—極性溶劑 (A1)、第二極性溶劑(A2)及耐熱性樹脂(B)之混合溶液中, 邊加熱至使耐熱性樹脂(C)充分溶解之溫度並攪拌等邊充 分混合。 如上述所得之樹脂糊於室溫下,耐熱性樹脂(C)係分 散於含第一極性溶劑(A1)、第二極性溶劑(A2)及耐熱性樹 脂(B)之混合溶液中。亦即,耐熱性樹脂(C)於樹脂糊中係 以塡料存在,可對樹脂糊賦予特別適用於網板印刷之觸變 特性。 分散於樹脂糊中之耐熱性樹脂(C)可爲平均粒徑爲 -26- 201245312 50μηι以下之粒子狀,較好爲0.01〜ΙΟμηι,更好爲0.1〜 5μΓη。且,最大粒徑較好爲1〇μηι,更好爲5μιη。該耐熱性 樹脂(C)之平均粒徑及最大粒徑可使用島津製作所(股)製造 之粒度分布測定裝置SALD-2200而測定。 第一極性溶劑(Α1)及第二極性溶劑(Α2)之混合比例, 雖依據耐熱性樹脂(Β)及耐熱性樹脂(C)之種類、對於第一 極性溶劑(Α1)及第二極性溶劑(Α2)之溶解度或使用量而定 ,但由樹脂糊之流動性、樹脂膜之解像度、形狀保持性以 及表面平坦性間之高度平衡之觀點而言,混合比例爲6 : 4 〜9:1,更好爲6.5: 3.5〜8.5〜1.5,最好爲7: 3〜8: 2 〇 . 本實施形態之樹脂糊中,相對於耐熱性樹脂(Β)及耐 熱性樹脂(C)之樹脂總量100質量份,較好調配100〜3 500 質量份之第一極性溶劑(Α1)與第二極性溶劑(Α2)之混合溶 劑,更好調配150〜1000質量份。 耐熱性樹脂(Β)及耐熱性樹脂(C)之調配比並未特別限 制,任意調配量均可,但較好相對於耐熱性樹脂(Β)之總 量100質量份,調配10〜3 00質量份之耐熱性樹脂(C), 更好爲10〜200質量份。耐熱性樹脂(C)之使用量爲10質 量份以上時,有提高所得耐熱性樹脂糊之觸變性之傾向, 若爲3 00質量份以下,則有提高所得樹脂膜物性之傾向。 本發明之樹脂糊,由自印刷版之脫離性、樹脂膜之解 像度及形狀保持性之觀點而言,在25 °C之黏度爲30〜 500Pa· s,更好爲50〜400 Pa. s,又更好爲70〜300 Pa. s -27- 201245312 。在25 °C之黏度爲30 Pa . s以上時,可更提高樹脂膜之 解像度,且爲500 Pa,s以下時,可更提高自網板印刷版 之脫離性。黏度可藉由調整樹脂糊之不揮發分濃度(以下 稱爲NV)、第一極性溶劑(A1)、耐熱性樹脂(B)或耐熱性樹 脂(C)之分子量等而控制。例如耐熱性樹脂(B)及耐熱性樹 脂(C)之分子量,使用凝膠滲透層析儀以標準聚苯乙烯換 算所測定之重量平均分子量,若爲10000〜100000即可, 較好爲20000〜80000,最好爲30000〜60000。 本實施形態之樹脂糊之觸變係數較好爲2.0〜10.0, 更好爲2.0〜6.0’又更好爲2.5〜5.5,最好爲3.0〜5.0。 觸變係數若爲2 · 0以上,則可更提高印刷性,若爲6.0以 下則可更提高作業性。 本實施形態之樹脂糊爲滿足高的耐熱性及絕緣性者, 可使用於半導體裝置、電化學裝置等之絕緣膜。且,例如 藉由添加矽烷偶合劑等,可使用作爲連接半導體裝置等之 接著劑而爲非常有用。 本實施形態之樹脂糊中,依據用途而定,亦可加入具 有橡膠彈性之低彈性塡料。低彈性塡料之種類並未特別限 制’但可舉例有丙烯酸橡膠、氟橡膠、聚矽氧橡膠、丁二 烯橡膠等之彈性體的塡料,或該等之液狀橡膠等。該等中 ,考慮樹脂組成物之耐熱性時較好爲聚矽氧橡膠。且,可 使用於塡料表面以環氧基、胺基、丙烯基、乙烯基、苯基 等之官能基予以化學修飾者,其中較好爲以環氧基修飾者 -28- 201245312 藉由於樹脂糊中添加低彈性塡料,可不損及耐熱性及 密著性而可處於低彈性,且彈性率之控制爲可能。具有橡 膠彈性之低彈性塡料較好爲微粒子化爲球形或不定形者, 平均粒徑爲0.1〜6μηι,較好爲0.2〜5 μιη,更好爲0.3〜 4μηι。平均粒徑爲Ο.ΐμπι以上時,有提高分散性之傾向, 爲6 μπι以下時,有提高所得塗膜之平坦性之傾向。具有橡 膠彈性之低彈性塡料之粒徑分布爲0.01〜15μπι,較好爲 0.02〜15μηι,更好爲0.03〜15μηι。粒徑分布爲Ο.ΟΙμιη以 上時,有提高分散性之傾向,爲1 5 μηι以下時,有提高所 得塗膜之平坦性之傾向》 本實施形態之耐熱性樹脂糊中,具有橡膠彈性之低彈 性塡料之調配量,對於耐熱性樹脂(Β)及耐熱性樹脂(C)之 總量100質量份,較好爲5〜900質量份,更好爲5〜800 質量份。 本實施形態之樹脂糊中,亦可進而添加著色劑、偶合 劑等之添加劑、樹脂改質劑。 作爲著色劑,舉例有碳黑、染料、顏料等。 作爲偶合劑舉例有矽烷系、鈦系、鋁系等之偶合劑等 ,最好爲矽烷系偶合劑。 至於矽烷系偶合劑並未特別限制,可使用例如乙烯基 三氯乙烷、乙烯基參甲氧基乙氧基)矽烷、乙烯基三乙 氧基矽烷、乙烯基三甲氧基矽烷、r -甲基丙烯醯氧基丙 基三甲氧基矽烷、甲基丙烯醯氧基丙基甲基二甲氧基 矽烷、々-(3,4-環氧基環己基)乙基三甲氧基矽烷、縮水 -29- 201245312 甘油氧基丙基三甲氧基矽烷、r-縮水甘油氧基丙基甲基 二甲氧基矽烷、r-縮水甘油氧基丙基甲基二乙氧基矽烷 、N- /3 (胺基乙基)r -胺基丙基三甲氧基矽烷、N-召(胺基 乙基)r-胺基丙基甲基二甲氧基矽烷、r-胺基丙基三乙氧 基矽烷、N-苯基· r -胺基丙基三甲氧基矽烷、7 -酼基丙基 三甲氧基矽烷、r-锍基丙基三乙氧基矽烷、3-胺基丙基甲 基二乙氧基矽烷、3-脲基丙基三乙氧基矽烷、3-脲基丙基 三甲氧基矽烷、3-胺基丙基三甲氧基矽烷、3-胺基丙基參 (2-甲氧基-乙氧基-乙氧基)矽烷、N-甲基-3-胺基丙基三甲 氧基矽烷、三胺基丙基三甲氧基矽烷、3,4,5-二氫咪唑-1-基·丙基三甲氧基矽烷、3-甲基丙烯醯氧基丙基三甲氧基矽 烷、3-毓基丙基-甲基二甲氧基矽烷、3·氯丙基-甲基二甲 氧基矽烷、3 -氯丙基-二甲氧基矽烷、3 -氰基丙基-三乙氧 基矽烷、己基甲基二矽氮烷、N,0-雙(三甲基矽烷基)乙醯 胺、甲基三甲氧基矽烷、甲基三乙氧基矽烷、乙基三氯矽 烷、正丙基三甲氧基矽烷、異丁基三甲氧基矽烷、鋁三氯 矽烷、辛基三乙氧基矽烷、苯基三甲氧基矽烷、苯基三乙 氧基矽烷、甲基參(甲基丙烯醯氧基乙氧基)矽烷、甲基參( 縮水甘油氧基)矽烷、N- /3 (N-乙烯基苄基胺基乙基)-γ -胺 基丙基三甲氧基矽烷、氯化十八烷基二甲基[3-(三甲氧基 矽烷基)丙基]敍、r-氯丙基甲基二氯矽烷、r-氯丙基甲 基二甲氧基矽烷、《Τ-氯丙基甲基二乙氧基矽烷、三甲基 矽烷基異氰酸酯、二甲基矽烷基異氰酸酯、甲基矽烷基三 異飫酸酯、乙烯基矽烷基三異氰酸酯、苯基矽烷基三異氰 -30- 201245312 酸酯、四異氰酸酯基矽烷、乙氧基矽烷異氰酸酯等,可使 用該等之一種或倂用兩種以上。 鈦系偶合劑並未特別限制,可使用例如異丙基三辛醯 基鈦酸酯、異丙基二甲基丙烯基異硬脂醯基鈦酸酯、異丙 基三-十二烷基苯磺醯基鈦酸酯、異丙基異硬脂醯基二丙 烯基鈦酸酯、異丙基三(二辛基磷酸酯)鈦酸酯、異丙基三 枯基苯基鈦酸酯、異丙基參(二辛基焦磷酸酯)鈦酸酯、異 丙基參(η-胺基乙基)鈦酸酯、四異丙基雙(二辛基亞磷酸酯 )鈦酸酯、四辛基雙(二-十三烷基亞磷酸酯)鈦酸酯、四 (2,2-二烯丙氧基甲基-1-丁基)雙(二-十三烷基)亞磷酸酯鈦 酸酯、二枯基苯基氧基乙酸酯鈦酸酯、雙(二辛基焦磷酸 酯)氧基乙酸酯鈦酸酯、四異丙基鈦酸酯、四正丁基鈦酸 酯、丁基鈦酸酯二聚物、四(2-乙基己基)鈦酸酯、乙醯基 乙酸鈦、聚乙醯乙酸鈦、鈦辛二醇、鈦乳酸銨鹽、乳酸鈦 、鈦乳酸乙酯、鈦三乙醇鋁酸酯、聚羥基鈦硬脂酸酯、四 甲基原鈦酸酯、四乙基原鈦酸酯、四丙基原鈦酸酯、四異 丁基原鈦酸酯、硬脂基鈦酸酯、甲苯基鈦酸酯單體、甲苯 基鈦酸酯聚合物、二異丙氧基-雙(2,4-戊二酸)鈦(IV)、二 異丙基-雙-三乙醇胺基鈦酸酯、辛二醇鈦酸酯、四正丁氧 基鈦聚合物、三正丁氧基鈦單硬脂酸酯聚合物、三-正-丁 氧基鈦單硬脂酸酯等,可使用該等之一種或倂用兩種以上 〇 至於鋁系偶合劑並未特別限制,可使用例如乙基乙醯 乙酸二異丙醇鋁、參(乙基乙醯乙酸)鋁、烷基乙醯乙酸二 -31 - 201245312 異丙醇鋁、單乙烯乙酸雙(乙基乙醯乙酸)鋁、參(乙醯乙酸 )鋁、鋁=單異丙氧基單油醯氧基乙基乙酸酯、鋁-二正丁 氧基-單乙基乙醯乙酸酯、鋁-二異丁氧基-單乙基乙醯乙酸 酯等之鋁螯合物、異丙醇鋁、單-第二丁氧基鋁二異丙醇 酯、第二丁醇鋁、乙醇鋁等之鋁醇鹽等,可使用該等之一 種或倂用兩種以上。 上述添加劑相對於耐熱性樹脂(B)及耐熱性樹脂(C)之 總量1 00質量份,較好調配5 0質量份以下。上述添加劑 之調配量若爲5 0質量份以下,則有提高耐熱性、機械強 度等之樹脂膜物性之傾向。 接著,針對使用本實施形態之樹脂糊之樹脂膜之形成 方法及所得之樹脂膜參考圖1加以說明。 本實施形態之樹脂膜之形成方法,包含於基材上網板 印刷上述本實施形態之樹脂糊之步驟,及將經網板印刷後 之之樹脂糊在1〇〇〜450 °C加熱之步驟。圖1爲本實施形態 之樹脂膜形成方法中示意性表示各步驟之樹脂膜狀態之剖 面圖。 (a)網板印刷步驟 於基材1上,網板印刷上述本實施形態之樹脂糊。樹 脂糊爲在室溫下,耐熱性樹脂(C)3係分散於包含第一極性 溶劑(A1)、第二極性溶劑(A2)及耐熱性樹脂(B)之溶液2中 之狀態。基材1可爲例如矽亦可在基材表面形成乳劑層。 網板印刷基中所用之網板、擠壓輥可無特別限制地使 -32- 201245312 用,但本實施形態之樹脂糊之塗佈適於橡膠製之擠壓輥》 (b)加熱步驟 將經網板印刷後之之樹脂糊在1 0 0〜4 5 0 °C加熱。加熱 可藉公知方法進行。本步驟中,耐熱性樹脂(C)3係溶解於 包含第一極性溶劑(A 1 )、第二極性溶劑(A2)及耐熱性樹脂 (B)之溶液2中’接著’第二極性溶劑(A2)、第一極性溶 劑(A2)依序揮發,形成樹脂膜4。 加熱溫度較好爲150〜400°C,更好爲150〜3 5 0°C。 未達100°C時,溶劑難以揮發,且耐熱性樹脂(C)3未溶解 於包含第一極性溶劑(A 1 )、第二極性溶劑(A2)及耐熱性樹 脂(B)之溶液2中之情況較多,有所得樹脂膜之表面平坦 性降低之傾向。於超過4 5 0 °C之溫度加熱時,有因逸氣而 於樹脂膜4發生孔洞之可能性。 耐熱性樹脂(B)及耐熱性樹脂(C)中之至少一者包含聚 醯亞胺樹脂前驅物時,爲使醯亞胺化進行,較好藉由在 350 °C以上,具體而言爲3 50〜45 0°C加熱而使樹脂硬化。 未達3 5 (TC時,有醯亞胺化反應進行速度變慢之傾向》 樹脂膜4之平坦性極高,表面粗度爲2μηι以下。又, 本發明中所謂樹脂膜之表面粗度係指算術平均粗度Ra。 算術平均粗度Ra意指自粗度曲線於其平均線方向僅抽取 基準長度(L),於該抽取部份之平均線方向設爲X軸,於 縱倍率方向設爲Y軸,粗度曲線以y = f(x)表示時,以下述 式求得之値以微米(μ«〇表示者。亦即,Ra爲以下述式(1) -33- 201245312 表示之値。 [數1] Λα==^Γΐ^ΙΛ ...π) 樹脂膜4可使用於半導體裝置或太陽能電池,但由該 使用樣態之觀點觀之,樹脂膜之玻璃轉移溫度Tg較好爲 18(TC以上,較好熱分解溫度爲300°C以上。 樹脂膜4由於具有形成再配線之步驟所需之耐濺鍍性 、耐鍍敷性、耐鹼性,故可較好地應用於半導體裝置。且 ,藉由使用樹脂膜4,由於亦可減低矽晶圓之翹曲量,故 可期待提高半導體裝置製造中之良率,可提高生產性。 半導體裝置可藉由在複數形成有相同構造配線之半導 體基板上,網板印刷本實施形態之樹脂糊,加熱而形成樹 脂膜,依據需要於樹脂膜上形成與半導體基板上之電極電 導通之配線,於上述配線或樹脂膜上形成保護膜,於上述 保護膜上形成外部端子,並藉由切割而製造。至於上述半 導體基板,並未特別限制,但舉例有例如矽晶圓。 又,樹脂膜4由於絕緣性優異,故可較好地使用於太 陽能電池之絕緣膜或保護膜。尤其可用於背面電極型 (back contact type)之太陽能電池。至於於背面電極型(back contact type)之構造,舉例有MWT構造(金屬貫穿式,Metal Wrap Through)、EWT 構造(射極貫穿式,Emitter Wrap Through)、IBC 構造(交指式背接觸式,Interdigitated -34- 2012453120— (b) Ο1 (a) The order of raw material input when cf3 modulates the resin paste is not particularly limited. For example, the raw material of the resin paste may be mixed at one time, or the first polar solvent (A1) and the second polar solvent (A2) may be first mixed, and the heat resistant resin (B) may be mixed in the mixed solvent, followed by The heat resistant resin (C) is added to the mixed solution of the polar solvent (A1), the second polar solvent (A2), and the heat resistant resin (B). Preferably, the raw material mixture of the above resin paste is used in the first polar solvent (A1). In the mixed solution of the second polar solvent (A2) and the heat resistant resin (B), the mixture is heated until the temperature at which the heat resistant resin (C) is sufficiently dissolved, and the mixture is sufficiently stirred while stirring. The resin paste obtained as described above is dispersed in a mixed solution containing the first polar solvent (A1), the second polar solvent (A2) and the heat resistant resin (B) at room temperature. That is, the heat-resistant resin (C) is present in the resin paste as a coating material, and the resin paste can be imparted with a thixotropic property particularly suitable for screen printing. The heat-resistant resin (C) dispersed in the resin paste may be in the form of particles having an average particle diameter of -26 to 201245312 50 μηι or less, preferably 0.01 to ΙΟμηι, more preferably 0.1 to 5 μΓη. Further, the maximum particle diameter is preferably 1 μηηι, more preferably 5 μιη. The average particle diameter and the maximum particle diameter of the heat-resistant resin (C) can be measured by using a particle size distribution measuring device SALD-2200 manufactured by Shimadzu Corporation. The mixing ratio of the first polar solvent (Α1) and the second polar solvent (Α2) depends on the type of the heat resistant resin (Β) and the heat resistant resin (C), and the first polar solvent (Α1) and the second polar solvent. (Α2) depends on the solubility or the amount of use, but the mixing ratio is 6:4 to 9:1 from the viewpoint of the fluidity of the resin paste, the resolution of the resin film, the shape retention, and the surface balance. More preferably, it is 6.5: 3.5 to 8.5 to 1.5, preferably 7:3 to 8: 2 〇. In the resin paste of the present embodiment, the total resin is compared with the heat resistant resin (Β) and the heat resistant resin (C). The amount of the mixture is 100 parts by mass, preferably 100 to 3 parts by mass of a mixed solvent of the first polar solvent (Α1) and the second polar solvent (Α2), and more preferably 150 to 1000 parts by mass. The blending ratio of the heat-resistant resin (Β) and the heat-resistant resin (C) is not particularly limited, and may be any amount, but it is preferably adjusted to 10 to 30,000 with respect to 100 parts by mass of the total amount of the heat-resistant resin (Β). The heat-resistant resin (C) is preferably 10 to 200 parts by mass. When the amount of the heat-resistant resin (C) is 10 parts by mass or more, the thixotropy of the obtained heat-resistant resin paste tends to be increased, and if it is 300 parts by mass or less, the physical properties of the obtained resin film tend to be improved. The resin paste of the present invention has a viscosity at 25 ° C of 30 to 500 Pa·s, more preferably 50 to 400 Pa·s, from the viewpoints of the release property of the printing plate, the resolution of the resin film, and the shape retention property. It is better for 70~300 Pa. s -27- 201245312. When the viscosity at 25 °C is 30 Pa·s or more, the resolution of the resin film can be further improved, and when it is 500 Pa or less, the release property from the screen printing plate can be further improved. The viscosity can be controlled by adjusting the nonvolatile concentration (hereinafter referred to as NV) of the resin paste, the first polar solvent (A1), the heat resistant resin (B), or the molecular weight of the heat resistant resin (C). For example, the molecular weight of the heat resistant resin (B) and the heat resistant resin (C) is a weight average molecular weight measured by a gel permeation chromatograph in terms of standard polystyrene, and is preferably 10,000 to 100,000, preferably 20,000. 80000, preferably 30,000~60000. The thixotropy coefficient of the resin paste of the present embodiment is preferably from 2.0 to 10.0, more preferably from 2.0 to 6.0', still more preferably from 2.5 to 5.5, most preferably from 3.0 to 5.0. When the thixotropy coefficient is 2 or more, the printability can be further improved, and if it is 6.0 or less, the workability can be further improved. The resin paste of the present embodiment can be used for an insulating film such as a semiconductor device or an electrochemical device, in order to satisfy high heat resistance and insulation properties. Further, for example, by adding a decane coupling agent or the like, it is very useful as a binder for connecting a semiconductor device or the like. In the resin paste of the present embodiment, depending on the use, a low elastic coating material having rubber elasticity may be added. The type of the low-elastic dip material is not particularly limited, but examples thereof include an elastomer of an acrylic rubber, a fluororubber, a polyoxyethylene rubber, a butadiene rubber, or the like, or such a liquid rubber. Among these, in view of the heat resistance of the resin composition, it is preferably a polyoxymethylene rubber. Moreover, the surface of the coating material can be chemically modified with a functional group of an epoxy group, an amine group, an acryl group, a vinyl group, a phenyl group or the like, and preferably an epoxy group is modified by a -28-201245312. The addition of a low-elastic binder to the paste allows for low elasticity without impairing heat resistance and adhesion, and control of the modulus of elasticity is possible. The low elastic varnish having rubber elasticity is preferably micronized into a spherical shape or an amorphous shape, and has an average particle diameter of 0.1 to 6 μm, preferably 0.2 to 5 μm, more preferably 0.3 to 4 μm. When the average particle diameter is Ο.ΐμπι or more, the dispersibility tends to be improved, and when it is 6 μm or less, the flatness of the obtained coating film tends to be improved. The particle size distribution of the low elastic elastic material having rubber elasticity is 0.01 to 15 μm, preferably 0.02 to 15 μm, more preferably 0.03 to 15 μm. When the particle size distribution is Ο.ΟΙμηη or more, the dispersibility tends to be improved, and when it is 15 μm or less, the flatness of the obtained coating film tends to be improved. The heat resistant resin paste of the present embodiment has a low rubber elasticity. The blending amount of the elastic resin is preferably from 5 to 900 parts by mass, more preferably from 5 to 800 parts by mass, per 100 parts by mass of the total of the heat resistant resin (Β) and the heat resistant resin (C). In the resin paste of the present embodiment, an additive such as a colorant or a coupling agent or a resin modifier may be further added. As the colorant, carbon black, a dye, a pigment, or the like is exemplified. The coupling agent is exemplified by a coupling agent such as a decane system, a titanium system or an aluminum system, and the like is preferably a decane coupling agent. The decane coupling agent is not particularly limited, and for example, vinyl trichloroethane, vinyl methoxyethoxy ethoxy) decane, vinyl triethoxy decane, vinyl trimethoxy decane, r - A can be used. Acryloxypropyltrimethoxydecane, methacryloxypropylmethyldimethoxydecane, fluorene-(3,4-epoxycyclohexyl)ethyltrimethoxydecane, shrinkage- 29- 201245312 Glyceroxypropyltrimethoxydecane, r-glycidoxypropylmethyldimethoxydecane, r-glycidoxypropylmethyldiethoxydecane, N- /3 ( Aminoethyl)r-aminopropyltrimethoxydecane, N-callo(aminoethyl)r-aminopropylmethyldimethoxydecane, r-aminopropyltriethoxydecane , N-phenyl·r-aminopropyltrimethoxydecane, 7-mercaptopropyltrimethoxydecane, r-mercaptopropyltriethoxydecane, 3-aminopropylmethyldiethyl Oxydecane, 3-ureidopropyltriethoxydecane, 3-ureidopropyltrimethoxydecane, 3-aminopropyltrimethoxydecane, 3-aminopropyl ginseng (2-methoxy) Ki-ethoxy-ethoxy) Decane, N-methyl-3-aminopropyltrimethoxydecane, triaminopropyltrimethoxydecane, 3,4,5-dihydroimidazol-1-yl-propyltrimethoxydecane, 3 -Methacryloxypropyltrimethoxydecane, 3-mercaptopropyl-methyldimethoxydecane, 3·chloropropyl-methyldimethoxydecane, 3-chloropropyl-di Methoxydecane, 3-cyanopropyl-triethoxydecane, hexylmethyldiazane, N,0-bis(trimethyldecyl)acetamide, methyltrimethoxydecane, A Triethoxy decane, ethyl trichloro decane, n-propyl trimethoxy decane, isobutyl trimethoxy decane, aluminum trichloro decane, octyl triethoxy decane, phenyl trimethoxy decane, benzene Triethoxy decane, methyl methacrylate (methacryloxyethoxy ethoxy) decane, methyl ginseng (glycidoxy) decane, N- / 3 (N-vinylbenzylaminoethyl) -γ-Aminopropyltrimethoxydecane, octadecyldimethyl[3-(trimethoxydecyl)propyl], r-chloropropylmethyldichlorodecane, r-chloro Propylmethyldimethoxydecane, Τ-chloropropylmethyldi Ethoxy decane, trimethyl decyl isocyanate, dimethyl decyl isocyanate, methyl decyl triisodecanoate, vinyl decyl triisocyanate, phenyl decyl triisocyanide-30-201245312 acid ester, As the tetraisocyanate decane or ethoxy decane isocyanate, one type or two or more types may be used. The titanium coupling agent is not particularly limited, and for example, isopropyl trioctyl decyl titanate, isopropyl dimethyl propylene isostearyl decyl titanate, isopropyl tri-dodecyl benzene sulfonate can be used. Titanium titanate, isopropylisostearyl decyldipropenyl titanate, isopropyl tris(dioctylphosphonate) titanate, isopropyltricumylphenyl titanate, isopropyl Ginseng (dioctyl pyrophosphate) titanate, isopropyl gin (η-aminoethyl) titanate, tetraisopropyl bis(dioctylphosphite) titanate, tetraoctyl double (di-tridecyl phosphite) titanate, tetrakis(2,2-diallyloxymethyl-1-butyl)bis(di-tridecyl)phosphite titanate, Dicumyl phenyloxyacetate titanate, bis(dioctyl pyrophosphate)oxyacetate titanate, tetraisopropyl titanate, tetra-n-butyl titanate, butyl Titanate dimer, tetrakis(2-ethylhexyl) titanate, titanium acetylacetate, titanium polyacetate, titanium octanediol, ammonium titanium lactate, titanium lactate, titanium lactate, titanium Triethanol aluminate, polyhydroxy titanium stearate, four Raw titanate, tetraethyl orthotitanate, tetrapropyl orthotitanate, tetraisobutyl orthotitanate, stearyl titanate, tolyl titanate monomer, tolyl titanate polymer , diisopropoxy-bis(2,4-pentanedioic acid) titanium (IV), diisopropyl-bis-triethanolamine titanate, octanediol titanate, tetra-n-butoxytitanium polymerization , tri-n-butoxytitanium monostearate polymer, tri-n-butoxytitanium monostearate, etc., one of these may be used or two or more kinds of ruthenium may be used as the aluminum coupling agent. It is not particularly limited, and for example, ethyl acetoacetate aluminum diisopropylate, ginsyl (ethyl acetoacetate) aluminum, alkyl acetoacetic acid di-31 - 201245312 aluminum isopropoxide, monovinyl acetic acid bis (ethyl) can be used. Acetylacetate) aluminum, ginseng (acetonitrile) aluminum, aluminum = monoisopropoxy monooleyloxyethyl acetate, aluminum-di-n-butoxy-monoethylacetate acetate, aluminum - aluminum chelate compound such as diisobutoxy-monoethylacetate acetate, aluminum isopropoxide, mono-second butoxide aluminum diisopropanol ester, aluminum second butoxide, aluminum ethoxide, etc. Aluminum alkoxide, etc., can be used Merger of two or two or more. The amount of the above-mentioned additive is preferably 50 parts by mass or less based on 100 parts by mass of the total of the heat resistant resin (B) and the heat resistant resin (C). When the amount of the above additives is 50 parts by mass or less, the physical properties of the resin film such as heat resistance and mechanical strength tend to be improved. Next, a method of forming a resin film using the resin paste of the present embodiment and a obtained resin film will be described with reference to Fig. 1 . The method for forming a resin film according to the present embodiment includes the step of printing the resin paste of the above-described embodiment on a substrate web, and the step of heating the resin paste after screen printing at 1 to 450 °C. Fig. 1 is a cross-sectional view schematically showing a state of a resin film in each step in the method of forming a resin film of the embodiment. (a) Screen printing step The resin paste of the above-described embodiment is printed on the substrate 1 by screen printing. The resin paste is in a state in which the heat-resistant resin (C) 3 is dispersed in the solution 2 containing the first polar solvent (A1), the second polar solvent (A2), and the heat-resistant resin (B) at room temperature. The substrate 1 may be, for example, ruthenium or may form an emulsion layer on the surface of the substrate. The screen plate and the squeezing roller used in the screen printing substrate can be used without any particular limitation -32-201245312, but the coating of the resin paste of the present embodiment is suitable for a rubber-made squeezing roller" (b) the heating step will The resin paste after screen printing is heated at 100 to 450 °C. Heating can be carried out by a known method. In this step, the heat resistant resin (C) 3 is dissolved in the solution 2 containing the first polar solvent (A 1 ), the second polar solvent (A2), and the heat resistant resin (B), and then the 'second' polar solvent ( A2), the first polar solvent (A2) is sequentially volatilized to form a resin film 4. The heating temperature is preferably from 150 to 400 ° C, more preferably from 150 to 350 ° C. When the temperature is less than 100 ° C, the solvent is hard to volatilize, and the heat resistant resin (C) 3 is not dissolved in the solution 2 containing the first polar solvent (A 1 ), the second polar solvent (A2), and the heat resistant resin (B). There are many cases, and the surface flatness of the obtained resin film tends to be lowered. When heated at a temperature exceeding 450 ° C, there is a possibility that a hole is formed in the resin film 4 due to outgas. When at least one of the heat resistant resin (B) and the heat resistant resin (C) contains a polyimide precursor resin precursor, it is preferred to carry out the imidization at 350 ° C or higher, specifically 3 50~45 0 °C heating to harden the resin. When the temperature is less than 3 5 (the tendency of the ruthenium imidization reaction to slow down), the flatness of the resin film 4 is extremely high, and the surface roughness is 2 μm or less. Further, the surface roughness of the resin film in the present invention is Refers to the arithmetic mean roughness Ra. The arithmetic mean roughness Ra means that only the reference length (L) is extracted from the roughness curve in the mean line direction, and the average line direction of the extracted portion is set to the X axis, which is set in the longitudinal direction direction. For the Y-axis, when the thickness curve is expressed by y = f(x), the value obtained by the following formula is expressed in microns (μ«〇. That is, Ra is expressed by the following formula (1) -33-201245312数 [1] Λα==^Γΐ^ΙΛ ... π) The resin film 4 can be used for a semiconductor device or a solar cell, but from the viewpoint of the use state, the glass transition temperature Tg of the resin film is good. It is 18 (TC or more, preferably a thermal decomposition temperature of 300 ° C or more. The resin film 4 can be preferably applied because it has sputtering resistance, plating resistance, and alkali resistance required for the step of forming a rewiring step. In the semiconductor device, by using the resin film 4, it is also possible to reduce the amount of warpage of the germanium wafer, so that it is expected to increase half. The yield of the conductor device can be improved, and the productivity can be improved. In the semiconductor device, the resin paste of the embodiment can be screen-printed on a semiconductor substrate having a plurality of wirings having the same structure, and heated to form a resin film. A wiring electrically connected to the electrode on the semiconductor substrate is formed on the film, a protective film is formed on the wiring or the resin film, an external terminal is formed on the protective film, and is formed by dicing. The semiconductor substrate is not particularly limited. For example, the resin film 4 is preferably used for an insulating film or a protective film of a solar cell, and is particularly useful for a back contact type solar cell. For the back contact type structure, there are exemplified MWT structure (Metal Wrap Through), EWT structure (Emitter Wrap Through), and IBC structure (interdigital back contact type). Interdigitated -34- 201245312

Back Contact)等》由於背面電極型之太陽能電池,基於提 高電轉換效率之目的,係使正電極及負電極集中於受光面 之背面,而具有互相接近之構造,故必須存在有絕緣膜。 太陽能電池之絕緣膜或保護膜可例如在點狀存在形成 複數正電極及負電極之基板上,以該電極除外之方式,網 板印刷本實施形態之樹脂糊,經加熱,形成樹脂膜而製造 。至於上述太陽能電池基板,並未特別限制,但舉例有例 如矽晶圓等。又,本實施形態之樹脂糊亦可藉網板印刷以 外之佈膠法或壓模法等之塗佈方法形成樹脂膜。 圖2爲示意性顯示製造本實施形態之MWT構造之背 面電極型太陽能電池之步驟之俯視圖,圖3爲示意性顯示 製造本實施形態之MWT構造之背面電極型太陽能電池之 步驟之剖面圖。圖3爲示意性顯示圖2中A-B間之剖面。 首先,準備於矽晶圓1 1之背面1 1 b上形成鋁配線1 2 ,且具有以特定間隔形成之複數正電極1 3及負電極1 4之 基板20(參考圖2及圖3(a))。此處,正電極13係形成於 矽晶圓1 1之背面Π b上,負電極14係以自矽晶圓1 1之 受光面11a貫穿至背面lib之方式形成。且,負電極14 未與鋁配線1 2相接,負電極1 4與鋁配線1 2之間留有空 隙。另一方面,正電極1 3未與鋁配線1 2相接。接著,於 鋁配線12上以使負電極14之端部露出之方式網板印刷樹 脂糊,經加熱而形成樹脂膜4(參考圖2及圖3(b))。樹脂 膜4塡充於鋁配線1 2及負電極1 4之間。隨後以被覆樹脂 膜4之一部份之方式,於負電極14上及正電極13上形成 -35- 201245312Back contact), etc., because of the solar cell of the back electrode type, the positive electrode and the negative electrode are concentrated on the back surface of the light receiving surface for the purpose of improving the electric conversion efficiency, and the insulating film is required to exist. The insulating film or the protective film of the solar cell can be produced, for example, by forming a resin film on the substrate on which the plurality of positive electrodes and the negative electrode are formed in a dot shape, and printing the resin paste of the present embodiment by heating. . The solar cell substrate is not particularly limited, and examples thereof include a germanium wafer. Further, the resin paste of the present embodiment may be formed into a resin film by a coating method such as a cloth coating method or a press molding method. Fig. 2 is a plan view schematically showing a step of manufacturing the back electrode type solar cell of the MWT structure of the present embodiment, and Fig. 3 is a cross-sectional view schematically showing a step of manufacturing the back electrode type solar cell of the MWT structure of the embodiment. Fig. 3 is a schematic cross-sectional view taken along line A-B of Fig. 2. First, an aluminum wiring 1 2 is formed on the back surface 1 1 b of the germanium wafer 1 1 and has a plurality of positive electrodes 13 and negative electrodes 14 formed at specific intervals (refer to FIGS. 2 and 3 (a). )). Here, the positive electrode 13 is formed on the back surface Πb of the 矽 wafer 1 1 , and the negative electrode 14 is formed so as to penetrate from the light receiving surface 11 a of the 矽 wafer 1 1 to the back surface lib. Further, the negative electrode 14 is not in contact with the aluminum wiring 12, and a gap is left between the negative electrode 14 and the aluminum wiring 12. On the other hand, the positive electrode 13 is not in contact with the aluminum wiring 12. Then, the resin paste is screen-printed on the aluminum wiring 12 so that the end portion of the negative electrode 14 is exposed, and the resin film 4 is formed by heating (refer to Figs. 2 and 3(b)). The resin film 4 is filled between the aluminum wiring 1 2 and the negative electrode 14 . Subsequently, a portion of the resin film 4 is coated, and the negative electrode 14 and the positive electrode 13 are formed -35-201245312

Tab配線15(參考圖2及圖3(c))。形成於負電極14上之 Tab配線15由於存在有樹脂膜4,故不與正電極13側之 鋁配線1 2相接,於兩電極間不會引起電子損失。正電極 1 3及負電極1 4較好由主要含銀之材料所形成。 圖4(a)爲示意性顯示本實施形態之IBC構造之背面電 極型太陽能電池之一例之俯視圖,圖4(b)爲示意性顯示圖 4(a)中C-D線間之剖面的圖》 圖4所示之ibc構造之背面電極型太陽能電池30係 由具有受光面21a及背面21b之矽晶圓21、在背面21b上 以特定間隔形成之複數正電極23及負電極24、以使正電 極23及負電極24之端部露出之方式被覆矽晶圓21之樹 脂膜5所構成。矽晶圓21中,與正電極2 3相接之部分爲 P層27,其以外之部分爲n層26。且,樹脂膜5可藉由與 上述MWT構造之背面電極型太陽能電池中之樹脂膜4相 同的方法形成。 圖5(a)爲示意性顯示本實施形態之EWT構造之背面 電極型太陽能電池之一例之俯視圖,圖5(b)爲示意性顯示 圖5(a)中E-F線間之剖面的圖。 圖5所示之EWT構造之背面電極型太陽能電池40係 由具有受光面3 1 a及背面3 1 b之矽晶圓3 1、在背面3 1 b上 以特定間隔形成之複數正電極33及負電極34、以使正電 極33及負電極34之端部露出之方式被覆矽晶圓31之樹 脂膜6所構成。矽晶圓31中,於上部形成有負電極3 4之 部份中,設有朝向受光面31a之貫穿孔36。且,樹脂膜6 -36- 201245312 可藉由與上述MWT構造之背面電極型 脂膜4相同的方法形成。 圖6爲顯示利用網板印刷之樹脂膜 。首先,準備成爲印刷對象之基板45、 佈有乳劑41之網篩42、及用以使本實 沿印刷方向A移動之橡膠擠壓輥44(圖 輥44在網篩42沿著印刷方向A移勤 4 1之部份之網篩,將樹脂糊43塗佈於 。藉由使經塗佈之樹脂糊43加熱成膜 圖 6(c))。 又,於背面電極型太陽能電池之背 只要以使形成有電極之部分不塗佈樹脂 於該部份之部位之網篩之背面塗佈乳劑 本實施形態之樹脂糊由於平坦性優 亦難以龜裂且信賴性亦優異。且相對於 痕,由於高的平坦性而使乾燥後之樹脂 故防止自絕緣膜最薄處之導電,電特性 之樹脂膜較好乾燥膜厚在1〜ΙΟΟμπι內 內,最好在1〜ΙΟμηι內。 若平坦性差則容易發生龜裂,而無 獲得發電效果。且因網痕會使樹脂膜面 脂膜凹部之最薄部分導電而使電特性降 關於本實施形態之樹脂膜,表β 0.2μιη以下,更好爲Ο.ΐμπι以下。 !太陽能電池中之樹 丨之製造方法示意圖 於背面特定部分塗 施形態之樹脂糊43 6(a))。使橡膠擠壓 I,透過未塗佈乳劑 基板45上(圖6(b)) 而獲得樹脂膜46 ( 面塗佈樹脂糊時, 糊之方式,於對應 即可。 異,故成爲薄膜時 網板印刷時產生網 膜之膜厚亦均一, 優異。本實施形態 ,更好在1〜20μηι 法藉由電極間導電 內凹凸,故有自樹 低之可能性。 S粗度Ra較好爲 -37- 201245312 實施例 以下’利用實施例詳細說明本發明,但本發明並非限 定於該等者。又,本實施例中,凝膠滲透層析儀係以下述 條件進行。 溶離液:ΝΜΡ、Η3ΡΟ4(0·06 莫耳/L)Tab wiring 15 (refer to FIG. 2 and FIG. 3(c)). Since the Tab wiring 15 formed on the negative electrode 14 is present in the resin film 4, it does not contact the aluminum wiring 12 on the positive electrode 13 side, and electron loss does not occur between the electrodes. The positive electrode 13 and the negative electrode 14 are preferably formed of a material mainly containing silver. Fig. 4 (a) is a plan view schematically showing an example of a back electrode type solar cell having an IBC structure according to the present embodiment, and Fig. 4 (b) is a view schematically showing a cross section between CD lines in Fig. 4 (a). The back electrode type solar cell 30 of the ibc structure shown in FIG. 4 is composed of a tantalum wafer 21 having a light receiving surface 21a and a back surface 21b, and a plurality of positive electrodes 23 and negative electrodes 24 formed at specific intervals on the back surface 21b to make a positive electrode. 23 and the end portion of the negative electrode 24 are exposed so as to be covered with the resin film 5 of the wafer 21. In the germanium wafer 21, the portion in contact with the positive electrode 23 is the P layer 27, and the other portion is the n layer 26. Further, the resin film 5 can be formed by the same method as the resin film 4 in the back electrode type solar cell of the above MWT structure. Fig. 5 (a) is a plan view schematically showing an example of a back electrode type solar cell of the EWT structure of the present embodiment, and Fig. 5 (b) is a view schematically showing a cross section taken along line E-F of Fig. 5 (a). The back electrode type solar cell 40 of the EWT structure shown in FIG. 5 is composed of a tantalum wafer 31 having a light receiving surface 31a and a back surface 3 1 b, and a plurality of positive electrodes 33 formed at a specific interval on the back surface 3 1 b and The negative electrode 34 is formed by covering the resin film 6 of the wafer 31 so that the ends of the positive electrode 33 and the negative electrode 34 are exposed. In the germanium wafer 31, a portion of the upper portion where the negative electrode 34 is formed is provided with a through hole 36 facing the light receiving surface 31a. Further, the resin film 6 - 36 - 201245312 can be formed by the same method as the back electrode type lipid film 4 of the above MWT structure. Fig. 6 is a view showing a resin film printed by screen printing. First, a substrate 45 to be printed, a mesh screen 42 on which the emulsion 41 is placed, and a rubber squeeze roller 44 for moving the solid in the printing direction A (the roller 44 is moved in the screen A along the printing direction A) The resin paste 43 is applied to the mesh of part 4 of the machine, and the coated resin paste 43 is heated to form a film (Fig. 6(c)). Further, in the back surface of the back electrode type solar cell, the emulsion is applied to the back surface of the mesh in which the resin is not applied to the portion where the resin is applied to the portion of the solar cell. The resin paste of the embodiment is difficult to crack due to the flatness. And the reliability is also excellent. And compared with the trace, the resin after drying is prevented from being electrically conductive from the thinnest portion of the insulating film due to high flatness, and the resin film having electrical properties is preferably dried in a film thickness of 1 to ΙΟΟμπι, preferably at 1 to ΙΟμηι. Inside. If the flatness is poor, cracking is likely to occur, and no power generation effect is obtained. Further, the net thickness of the concave portion of the resin film surface of the resin film is caused to be electrically conductive, and the electrical property is lowered. The resin film of the present embodiment has a surface of 0.2 or less, more preferably Ο.ΐμπι or less. !In the solar cell, a method of manufacturing the resin is applied to a specific portion of the back surface of the resin paste 43 6(a)). The rubber is extruded, and the resin film 46 is obtained by passing through the uncoated emulsion substrate 45 (Fig. 6(b)). (When the resin paste is applied to the surface, the paste may be applied in a corresponding manner. In the case of sheet printing, the film thickness of the web film is uniform and excellent. In the present embodiment, it is more preferable that the thickness of the self-tree is low in the case of the conductive unevenness between the electrodes in the 1 to 20 μm method. The thickness Ra of the S is preferably -37. - 201245312 EXAMPLES Hereinafter, the present invention will be described in detail by way of examples, but the present invention is not limited thereto. Further, in the present embodiment, the gel permeation chromatography apparatus was carried out under the following conditions: Dissolution liquid: ΝΜΡ, Η3ΡΟ4 ( 0·06 Moor/L)

管柱種類:昭和電工(股)製之Shodex溶劑取代分離管 柱 GPC KD-806M 校正線作成用之標準物質:標準聚苯乙烯 <合成例1 :耐熱性樹脂(B)之合成> 於安裝有溫度計、攪拌機、氮氣導入管、附油水分離 機之冷卻管之5升4頸燒瓶中,在氮氣流下,饋入2,2_雙 [4-(4-胺基苯氧基)苯基]丙烷(以下稱BAPP) 650.90g(1.59 莫耳)’添加N -甲基-2 -卩比略院嗣(以下稱NMP) 3609.86g 並溶解。接著以使不超過2〇°C之方式邊冷卻邊添加氯化偏 苯三酸酐(以下稱TAC) 384.36g(1.83莫耳)。 於室溫攪拌1小時後,以使不超過20°C之方式邊冷卻 邊添加三乙胺(以下稱TEA) 215.90g(2.14莫耳),在室溫 反應1小時,製造聚醯胺酸漆料。所得聚醯胺酸漆料進而 在1 8 0 °C進行脫水反應6小時,製造聚醯胺醯亞胺漆料。 將該聚醯胺醯亞胺之漆料注入水中而得之沉澱物予以分離 、粉碎、乾燥,獲得聚醯胺醯亞胺樹脂粉末(MPAI-1)(式 (1)中,X爲以式(a)表示之聚醯胺醯亞胺)。所得聚醯胺醯 -38- 201245312 亞胺樹脂(mpai-1)之重量平均分子量使用凝膠滲透層析儀 (以下稱GPC)以標準聚苯乙烯換算而測定後爲55000。又 ,該聚醯胺醯亞胺樹脂粉末(MPAI-1)於25°C下,於後述實 驗中之第一極性溶劑(A1)及第二極性溶劑(A2)之質量比7 :3或9:1之溶液中爲可溶。 <合成例2 :耐熱性樹脂(C)之合成> 於安裝有溫度計、攪拌機、氮氣導入管、附油水分離 機之冷卻管之1升4頸燒瓶中,在氮氣流下,饋入BAPP 69.72g (170.1毫莫耳),添加NMP 693.52g並溶解。接著 以使不超過20 °C之方式邊冷卻邊添加TAC 2 5.0 5 g( 11 9.0 毫莫耳)及3,4,3’,4’-二苯甲酮四羧酸二酐(以下稱 BTDA)2 5.47g (79.1 毫莫耳)。 於室溫攪拌1小時後,以使不超過2 0 °C之方式邊冷卻 邊添加TEA 14.42g(142.8毫莫耳),在室溫反應1小時, 製造聚醯胺酸漆料。所得聚醯胺酸漆料進而在1 8(TC進行 脫水反應6小時,製造聚醯亞胺漆料。將該聚醯亞胺之漆 料注入水中而得之沉澱物予以分離、粉碎、乾燥,獲得聚 醯亞胺樹脂粉末(PAI-1)(式(20)中,X爲以式(a)表示之聚 醯亞胺)》所得聚醯亞胺樹脂(PAI-1)之重量平均分子量使 用GPC以標準聚苯乙烯換算而測定後爲3 9000。又,該聚 醯亞胺樹脂粉末(PAI-1)於25°C下,於後述實驗中之第一 極性溶劑(A1)中爲可溶,但於第二極性溶劑(A2)中不溶, 於第一極性溶劑(A 1)及第二極性溶劑(A2)之質量比7 : 3 -39- 201245312 或9 : 1之溶液中爲不溶。又’平均粒徑爲1 μπι。 <樹脂糊(Ρ-1)〜(Ρ-7)之調製> (實施例1) 於安裝有溫度計、攪拌機、氮氣導入管、冷卻管之 〇. 5升4頸燒瓶中,在氮氣流下,添加作爲第一極性溶劑 (Α1)之r-丁內酯92.4g、作爲第二極性溶劑(Α2)之二乙二 醇二乙醚39.6g、作爲耐熱性樹脂(B)之於合成例1所得之 聚醯胺醯亞胺樹脂粉末(MPAI-l)30.8g、作爲耐熱性樹脂 (C)之於合成例2所得之聚醯亞胺樹脂粉末(PAI-1) 13.2g, 邊搅拌邊升溫至180°C。在180°C攪拌2小時後停止加熱, 邊搅拌邊放置冷卻,獲得黃色組成物。塡充於過濾器KST-47(ADVANTECH(股)製)中,插入聚矽氧橡膠製活塞,以 3.0 kg/cm2之壓力加壓過濾,獲得樹脂糊(P-1)。 (實施例2) 除使用丁醯溶纖劑乙酸酯作爲第二極性溶劑(A2)以外 ,與實施例1同樣,獲得樹脂糊(P-2)。 (實施例3) 除使用r-丁內酯118.9g作爲第一極性溶劑(A1),二 乙二醇二乙醚13.2g作爲第二極性溶劑(A2)以外,與實施 例1同樣,獲得樹脂糊(P-3)。 -40- 201245312 (實施例4) 除使用丁醢溶纖劑乙酸酯作爲第二極性溶劑(A2)以外 ’與實施例3同樣,獲得樹脂糊(p_4)。 (比較例1) 除以三乙二醇二甲醚替代二乙二醇二甲醚以外,與實 施例1同樣,獲得樹脂糊(P_5) ^ (比較例2) 除使用r-丁內酯66.1g作爲第—極性溶劑(A1),二乙 二醇二乙醚6 6 · 1 g作爲第二極性溶劑(A2)以外,與實施例 1同樣,獲得樹脂糊(P-6)。 (比較例3) 除使用7-丁內酯66.lg作爲第一極性溶劑(A1),丁醯 溶纖劑乙酸酯66 ·丨g作爲第二極性溶劑(A2)以外,與實施 例1同樣,獲得樹脂糊(P - 7)。 <評價> (黏度及觸變係數(TI値)) 於實施例1〜4及比較例1〜3所得之樹脂糊之黏度及 觸變係數(TI値)係利用高黏度黏度計RE-80U (東機產業(股 )製)測定。黏度係於旋轉數0 · 5 rpm之測定値,觸變係數 (TI値)係作爲於旋轉數丨0rpm之黏度測定値相對於旋轉數 -41 - 201245312 1 rpm之黏度測定値之比而算出。 (不揮發份濃度) 於實施例1〜4及比較例1〜3所得之樹脂糊於金屬盤 上枰量數克。該樹脂糊於150°C乾燥1小時,於250°C乾 燥2小時後’於金屬盤上秤量,基於下述式(2)算出不揮發 份濃度(以下稱爲NV)。 NV(%) =(樹脂糊加熱乾燥後之質量(g)/加熱乾燥前之樹脂 糊質量(g))xl〇〇…(2) (解像度) 於8吋砂晶圓上,塗佈具有直徑300μιη或500μηι之 圓形開口部之乳劑,將實施例1〜4及比較例1〜3所得之 樹脂糊,使用網板印刷機(EURONG精密工業(股)製,附對 準裝置之 LZ-0843)、網版(NBC MESHTEC 製,V380、線 徑23μηι,厚度43μηι,乳劑厚2 Ομπι)及ΜΝ橡膠擠壓輥 (EURONG精密工業(股)製),以留下上述開口部之方式進 行網板印刷。 網板印刷後,於加熱至1 〇〇 °C之加熱板上加熱1 〇分鐘 ,進而於加熱至25 0°c之烘箱中加熱30分鐘,對經乾燥、 硬化所得之樹脂膜,使用萬能投影機(NIKON(股)製,V-1 2B),測定對應於上述乳劑開口部之樹脂糊之印刷部中6 個部位之孔部直徑(孔徑)之平均値。實施例1、2及比較例 -42- 201245312 1、3之孔部形成爲直徑3 0 Ομπι之乳劑開口部。且實施例3 、4之孔部形成爲直徑5 ΟΟμιη之乳劑開口部。又,所謂偏 差表示觀測部位(η = 6)之標準偏差之値,越小越好。 具體而言,以上述萬能投影機觀測印刷部之孔徑,使 用數據處理系統(NIKON(股)製,DP-202),利用三點輸入 形式算出孔部徑。以該孔徑之n = 6之平均値作爲解像度。 (乾燥膜厚) 針對解像度評價中製作之樹脂膜,使用微米計 (MITUTOYO(股)製,型號MDE-25PJ),'測定乾燥膜厚。 (表面粗度) 針對網板印刷後,如上述加熱所得之樹脂膜,使用觸 針式表面粗度測定器(小坂硏究所(股)製,型號:SE 1 700-1 8 D,測定距離:1 (〕· 〇 m m,進給速度:0.5 m m / s) ’測定樹 脂膜之表面粗度(算術平均粗度:Ra) » 實施例1〜4及比較例1〜3所得之樹脂糊(P-1)〜(P-7)中所含之第一極性溶劑(A1)及第二極性溶劑(A2)之種類 、沸點、第一極性溶劑(A 1 )及第二極性溶劑(A2)之質量比 、以及樹脂糊(P-1)〜(P-7)及使用該等所得之樹脂膜之各 種評價結果示於表1、2。又’比較例2所得之樹脂糊爲口 香糖狀,無法測定黏度及TI値’無法進行網板印刷。 -43- 201245312 [表i] 實方 _ 1 2 3 4 A1 種類 7-丁內酯 r-丁內酯 r-丁內酯 r-丁內酯 沸點(°c) 204 204 204 204 A2 種類 二乙二醇 二甲醚 丁醯溶纖劑 乙酸酯 二乙二醇 二甲醚 丁醯溶纖劑 乙酸酯 沸點(°c) 185 171 185 171 A1與A2之質量比 7:3 7:3 9:1 9:1 黏度(Pa · s) 93 105 87 99 ΤΙ値 4.0 4.0 3.3 3.8 NV(°/〇) 21.9 20.8 22.2 21.3 解像度(μηι) 142 176 320 421 偏離數値 18 22 19 30 乾燥膜厚(μ m) 4 4 4 4 表面粗糙度Ra(Mm) 0.0885 0.0465 0.0287 0.0185 [表2] 比較例 1 2 3 A1 種類 r-丁內酯 r-丁內酯 7"-丁內酯 沸點(°c) 204 204 204 A2 種類 三乙二醇 二甲醚 二乙二醇 二甲醚 丁醯溶纖劑 乙酸酯 沸點(°C) 216 185 171 A1與A2之質量比 7:3 5:5 5:5 黏度(Pa _ s) 102 _ 102 ΤΙ値 3.6 3.6 NV(%) 20.9 _ 23.1 解像度(μιη) 167 162 偏離數値 28 26 乾燥膜厚(μ m) 4 • 5 表面粗糙度Ra^m) 0.1444 • 0.2049 -44- 201245312 由表1、2可知,由實施例1〜4所得之樹脂糊獲得之 樹脂膜,相較於利用使用沸點溫度比第一極性溶劑(A 1 )高 者作爲第二極性溶劑(A2)之比較例1,或A1 : A2之比爲 5.5之比較例2及3之樹脂糊所得之樹脂膜,可獲得精密 之解像度且表面平坦性特別優異。 【圖式簡單說明】 圖1 U)爲在基材上剛網板印刷後之樹脂糊之示意剖面 圖,圖1 (b)爲使基材上之樹脂糊加熱所得之樹脂膜之示意 剖面圖。 圖2爲示意性表示製造本實施形態之MWT構造之背 面電極型太陽能電池之步驟的俯視圖。 圖3爲示意性表示製造本實施形態之MWT構造之背 面電極型太陽能電池之步驟的剖面圖。 圖4(a)爲示意性表示本實施形態之IBC構造之背面電 極型太陽能電池之一例的俯視圖;圖4(b)爲示意性表示本 實施形態之IB C構造之背面電極型太陽能電池之一例的剖 面圖。 圖5(a)爲示意性表示本實施形態之EWT構造之背面 電極型太陽能電池之一例的俯視圖;圖5(b)爲示意性表示 本實施形態之EWT構造之背面電極型太陽能電池之一例 的剖面圖。 圖6爲表示利用網板印刷之樹脂膜之製造方法的示意 -45- 201245312 圖 【主要元件符號說明】 1 :基材 2 :含第一極性溶劑(A1)、第二極性溶劑(A2)及耐熱性樹 脂(B)之溶液 3 :耐熱性樹脂(C) 4,5,6 :樹脂膜 1 1 ,2 1,3 1 :矽晶圓 1 2 :銘配線 1 3,23,3 3 :正電極 14,24,34:負電極 15: TAB配線 20 :基板 30 : IBC構造之背面電極型太陽能電池 3 6 :貫通孔 40 : EWT構造之背面電極型太陽能電池 4 1 :乳劑 42 :網篩 43 :樹脂糊 44 :橡膠擠壓輥 45 :基板 46 :樹脂膜 -46 -Column type: Shodex solvent-substituted separation column made by Showa Denko Co., Ltd. GPC KD-806M Standard material for calibration line preparation: Standard polystyrene < Synthesis Example 1: Synthesis of heat-resistant resin (B) > A 5 liter, 4-necked flask equipped with a thermometer, a stirrer, a nitrogen gas introduction tube, and a cooling tube with an oil-water separator was fed with 2,2-bis[4-(4-aminophenoxy)phenyl group under a nitrogen stream. Propane (hereinafter referred to as BAPP) 650.90g (1.59 mole) 'Add N-methyl-2-indole (hereinafter referred to as NMP) 3609.86g and dissolve. Then, 384.36 g (1.83 mol) of trimellitic anhydride (hereinafter referred to as TAC) was added while cooling so as not to exceed 2 °C. After stirring at room temperature for 1 hour, 215.90 g (2.14 mol) of triethylamine (hereinafter referred to as TEA) was added while cooling at a temperature of not more than 20 ° C, and reacted at room temperature for 1 hour to produce a polyamidite paint. material. The obtained polyamic acid lacquer was further subjected to a dehydration reaction at 180 ° C for 6 hours to produce a polyamide amidoxime paint. The precipitate obtained by injecting the polyamidamine imide into water is separated, pulverized, and dried to obtain a polyamidamine resin powder (MPAI-1) (in the formula (1), X is a formula (a) shows a polyamidimide). The weight average molecular weight of the obtained polyamidoxime-38-201245312 imine resin (mpai-1) was 55,000 as measured by a gel permeation chromatography (hereinafter referred to as GPC) in terms of standard polystyrene. Moreover, the mass ratio of the first polar solvent (A1) and the second polar solvent (A2) in the later-described experiment of the polyamidoximine resin powder (MPAI-1) at 25 ° C is 7:3 or 9 The solution of :1 is soluble. <Synthesis Example 2: Synthesis of heat-resistant resin (C)> In a 1-liter four-necked flask equipped with a thermometer, a stirrer, a nitrogen gas introduction tube, and a cooling water tube with an oil-water separator, BAPP 69.72 was fed under a nitrogen stream. g (170.1 mmol), NMP 693.52g was added and dissolved. Then, TAC 2 5.0 5 g (11 9.0 mmol) and 3,4,3',4'-benzophenone tetracarboxylic dianhydride (hereinafter referred to as BTDA) were added while cooling not to exceed 20 °C. ) 2 5.47g (79.1 millimoles). After stirring at room temperature for 1 hour, 14.43 g (142.8 mmol) of TEA was added while cooling at not more than 20 ° C, and the mixture was reacted at room temperature for 1 hour to produce a polyamic acid paint. The obtained polyamic acid lacquer was further subjected to a dehydration reaction for 18 hours at TC to produce a polyimide pigment paint. The precipitate obtained by injecting the polyimide pigment into water was separated, pulverized, and dried. The weight average molecular weight of the polyimine resin (PAI-1) obtained by obtaining the polyimine resin powder (PAI-1) (wherein X is a polyimine represented by the formula (a)) The GPC was measured to be 3 9000 in terms of standard polystyrene conversion. Further, the polyimine resin powder (PAI-1) was soluble at 25 ° C in the first polar solvent (A1) in the experiment described later. However, it is insoluble in the second polar solvent (A2), and is insoluble in the solution of the first polar solvent (A1) and the second polar solvent (A2) in a mass ratio of 7:3 to 39-201245312 or 9:1. Further, the average particle diameter is 1 μm. <Preparation of resin paste (Ρ-1) to (Ρ-7)> (Example 1) After mounting a thermometer, a stirrer, a nitrogen gas introduction tube, and a cooling tube. In a 4-necked flask, 92.4 g of r-butyrolactone as a first polar solvent (Α1) and diethylene glycol diethyl ether as a second polar solvent (Α2) were added under a nitrogen stream. 39.6 g, 30.8 g of the polyamidoximine resin powder (MPAI-1) obtained in Synthesis Example 1 as the heat resistant resin (B), and the polysiloxane obtained as the heat resistant resin (C) in Synthesis Example 2. 13.2 g of an amine resin powder (PAI-1), and the temperature was raised to 180 ° C while stirring. After stirring at 180 ° C for 2 hours, the heating was stopped, and the mixture was cooled while stirring to obtain a yellow composition. The filter was applied to the filter KST-47. (ADVANTECH Co., Ltd.) was inserted into a piston made of polyoxyethylene rubber, and filtered under pressure at a pressure of 3.0 kg/cm 2 to obtain a resin paste (P-1). (Example 2) In addition to the use of cellosolve acetate A resin paste (P-2) was obtained in the same manner as in Example 1 except for the second polar solvent (A2). (Example 3) In addition to using r-butyrolactone 118.9 g as the first polar solvent (A1), diethyl A resin paste (P-3) was obtained in the same manner as in Example 1 except that 13.2 g of diol diethyl ether was used as the second polar solvent (A2). -40 - 201245312 (Example 4) Except that the cellosolve acetate was used as the first In the same manner as in Example 3 except for the dipolar solvent (A2), a resin paste (p_4) was obtained. (Comparative Example 1) Diethylene glycol dimethyl ether was substituted for diethylene glycol. In the same manner as in Example 1, except for dimethyl ether, a resin paste (P_5) was obtained (Comparative Example 2) except that 66.1 g of r-butyrolactone was used as the first polar solvent (A1), diethylene glycol diethyl ether 6 6 · A resin paste (P-6) was obtained in the same manner as in Example 1 except that 1 g was used as the second polar solvent (A2). (Comparative Example 3) In addition to using 7-butyrolactone 66.lg as the first polar solvent (A1) A resin paste (P-7) was obtained in the same manner as in Example 1 except that the cellosolve acetate 66 was used as the second polar solvent (A2). <Evaluation> (Viscosity and Thix Coefficient (TI値)) The viscosity and thixotropic coefficient (TI値) of the resin pastes obtained in Examples 1 to 4 and Comparative Examples 1 to 3 were made by using a high viscosity viscometer RE- 80U (East Machinery Industry Co., Ltd.) measurement. The viscosity was measured at a rotation number of 0 · 5 rpm, and the thixotropy coefficient (TI 値) was calculated as the ratio of the viscosity measured at a rotation number of 丨0 rpm to the viscosity measured at a rotation number of -41 - 201245312 1 rpm. (Non-volatile content) The resin pastes obtained in Examples 1 to 4 and Comparative Examples 1 to 3 were weighed several gram on a metal disk. The resin paste was dried at 150 ° C for 1 hour, dried at 250 ° C for 2 hours, and weighed on a metal disk, and the concentration of non-volatile matter (hereinafter referred to as NV) was calculated based on the following formula (2). NV (%) = (mass after heating and drying of resin paste (g) / mass of resin paste before heating and drying (g)) xl 〇〇 (2) (resolution) on 8 吋 sand wafer, coated with diameter The emulsion of the circular opening of 300 μm or 500 μηι, the resin paste obtained in Examples 1 to 4 and Comparative Examples 1 to 3, using a screen printing machine (EURONG Precision Industry Co., Ltd., LZ-0843 with alignment device) ), screen (NBC MESHTEC, V380, wire diameter 23μηι, thickness 43μηι, emulsion thickness 2 Ομπι) and ΜΝ rubber extrusion roller (EURONG Precision Industry Co., Ltd.), the stencil is left in such a manner as to leave the opening print. After screen printing, it is heated on a hot plate heated to 1 ° C for 1 , minutes, and then heated in an oven heated to 25 ° C for 30 minutes. For the dried and hardened resin film, a universal projection is used. The machine (manufactured by NIKON Co., Ltd., V-1 2B) measures the average enthalpy of the diameter (pore diameter) of the pores at six locations in the printing portion of the resin paste corresponding to the opening of the emulsion. Examples 1, 2 and Comparative Examples - 42 - 201245312 The hole portions of the first and third portions were formed into an emulsion opening portion having a diameter of 30 μm. Further, the hole portions of Examples 3 and 4 were formed into an emulsion opening portion having a diameter of 5 μm. Further, the deviation indicates the standard deviation of the observed portion (η = 6), and the smaller the better. Specifically, the aperture of the printing unit was observed by the universal projector, and the hole diameter was calculated by a three-point input method using a data processing system (NIKON, DP-202). The average 値 of the aperture of n = 6 is taken as the resolution. (Dry film thickness) For the resin film produced in the evaluation of the resolution, a dry film thickness was measured using a micrometer (MITUTOYO, model MDE-25PJ). (Surface thickness) After the screen printing, the resin film obtained by heating as described above is measured using a stylus type surface roughness measuring instrument (manufactured by Kojima Seisakusho Co., Ltd., model: SE 1 700-1 8 D) :1 (]· 〇mm, feed rate: 0.5 mm / s) 'Measurement of surface roughness of resin film (arithmetic mean roughness: Ra) » Resin paste obtained in Examples 1 to 4 and Comparative Examples 1 to 3 ( The type, the boiling point, the first polar solvent (A 1 ), and the second polar solvent (A2) of the first polar solvent (A1) and the second polar solvent (A2) contained in P-1) to (P-7) The mass ratio, the resin pastes (P-1) to (P-7), and the evaluation results of the resin films obtained by using the above were shown in Tables 1 and 2. Further, the resin paste obtained in Comparative Example 2 was in the form of a chewing gum. Unable to measure viscosity and TI値' can't be screen printed. -43- 201245312 [Table i] Real _ 1 2 3 4 A1 Type 7-butyrolactone r-butyrolactone r-butyrolactone r-butyrolactone Boiling point (°c) 204 204 204 204 A2 Species Diethylene glycol dimethyl ether butyl ketone Cellulose acetate Diethylene glycol dimethyl ether Butyl solvate Cellulose acetate Boiling point (°c) 185 171 185 171 Mass ratio of A1 to A2 7:3 7:3 9:1 9:1 Viscosity (Pa · s) 93 105 87 99 ΤΙ値 4.0 4.0 3.3 3.8 NV (°/〇) 21.9 20.8 22.2 21.3 Resolution (μηι) 142 176 320 421 Deviation number 18 22 19 30 Dry film thickness (μ m) 4 4 4 4 Surface roughness Ra(Mm) 0.0885 0.0465 0.0287 0.0185 [Table 2] Comparative Example 1 2 3 A1 Type r-butyrolactone r-butyl Lactone 7"-butyrolactone boiling point (°c) 204 204 204 A2 type triethylene glycol dimethyl ether diethylene glycol dimethyl ether butyl hydrazine cellosolve acetate boiling point (°C) 216 185 171 A1 and A2 Mass ratio 7:3 5:5 5:5 Viscosity (Pa _ s) 102 _ 102 ΤΙ値3.6 3.6 NV (%) 20.9 _ 23.1 Resolution (μιη) 167 162 Deviation number 28 26 Dry film thickness (μ m) 4 • 5 surface roughness Ra^m) 0.1444 • 0.2049 -44- 201245312 It can be seen from Tables 1 and 2 that the resin film obtained from the resin pastes obtained in Examples 1 to 4 is compared with the use of the boiling point temperature ratio of the first polar solvent. (A 1 ) The resin film obtained by the resin sample obtained in Comparative Example 1 of the second polar solvent (A2) or the resin paste of Comparative Examples 2 and 3 in which the ratio of A1 : A2 is 5.5 can obtain a precise resolution. Particularly excellent surface flatness. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic cross-sectional view of a resin paste immediately after screen printing on a substrate, and FIG. 1(b) is a schematic cross-sectional view of a resin film obtained by heating a resin paste on a substrate. . Fig. 2 is a plan view schematically showing a step of producing a back electrode type solar cell of the MWT structure of the present embodiment. Fig. 3 is a cross-sectional view schematically showing the steps of manufacturing the back electrode type solar cell of the MWT structure of the present embodiment. Fig. 4 (a) is a plan view schematically showing an example of a back electrode type solar cell having an IBC structure according to the present embodiment, and Fig. 4 (b) is a view showing an example of a back electrode type solar cell having an IB C structure according to the present embodiment. Sectional view. Fig. 5 (a) is a plan view schematically showing an example of a back electrode type solar cell of the EWT structure of the present embodiment, and Fig. 5 (b) is a view schematically showing an example of a back electrode type solar cell of the EWT structure of the embodiment. Sectional view. 6 is a schematic view showing a method of manufacturing a resin film printed by screen printing. -45-201245312 [Key element symbol description] 1 : Substrate 2: a first polar solvent (A1), a second polar solvent (A2), and Solution 3 of heat resistant resin (B): heat resistant resin (C) 4, 5, 6 : Resin film 1 1 , 2 1, 3 1 : 矽 wafer 1 2 : Ming wiring 1 3, 23, 3 3 : positive Electrode 14, 24, 34: Negative electrode 15: TAB wiring 20: Substrate 30: Back electrode type solar cell of IBC structure 3 6 : Through hole 40: Back electrode type solar cell of EWT structure 4 1 : Emulsion 42 : Screen 43 : Resin paste 44 : Rubber squeeze roll 45 : Substrate 46 : Resin film - 46 -

Claims (1)

201245312 七、申請專利範圍: 1. 一種樹脂糊,其係包含: 以質量比6 : 4〜9 : 1含有第一極性溶劑(A 1)及具有 比該第一極性溶劑(A 1)之沸點還低之沸點之第二極性溶劑 (A2)的混合溶劑、 室溫中可溶於前述混合溶劑的耐熱性樹脂(B)、 室溫中可溶於前述第一極性溶劑(A1)但不溶於前述第 二極性溶劑(A2)且不溶於前述混合溶劑的耐熱性樹脂(C) » 而前述耐熱性樹脂(C)係經分散於含有前述混合溶劑 及前述耐熱性樹脂(B)的溶液中。 2. 如請求項1之樹脂糊,其中前述第一極性溶劑(A1) 之沸點與前述第二極性溶劑(A2)之沸點之差爲1〇〜l〇(TC 〇 3. 如請求項1或2之樹脂糊,其中前述耐熱性樹脂(B) 及前述耐熱性樹脂(C)係分別獨立選自聚醯胺樹脂、聚醯 亞胺樹脂、聚醯胺醯亞胺樹脂,或,聚醯亞胺樹脂及聚醯 胺醯亞胺樹脂之前驅物之至少一種。 4. 如請求項1〜3中任一項樹脂糊,其中前述經分散 於溶液中的前述耐熱性樹脂(C)係平均粒子徑爲50μηι以下 之粒子狀。 5. —種太陽能電池之製造方法,其係包含以下步驟: 將如請求項1〜4中任一項之樹脂糊網板印刷於具有 負電極與正電極之基材之電極側面上的步驟、 -47- 201245312 以1 0 0〜4 5 0 C加熱乾燥已網板印刷之前述樹脂糊的步 驟。 6. —種太陽能電池,其係藉由如請求項5之方法而製 造者。 7. —種樹脂膜,其係藉由包含以下步驟的方法而形成 者,且表面粗度爲2μηι以下; 將如請求項1〜4中任一項之樹脂糊網板印刷於基材 上的步驟, 與以100〜450 °C加熱已網板印刷之前述樹脂糊的步驟 〇 8. —種半導體裝置,其係具備如請求項7之樹脂膜。 -48 -201245312 VII. Patent application scope: 1. A resin paste comprising: a first polar solvent (A 1 ) and a boiling point of the first polar solvent (A 1 ) at a mass ratio of 6:4 to 9:1; a mixed solvent of a second polar solvent (A2) having a low boiling point, a heat resistant resin (B) soluble in the above mixed solvent at room temperature, soluble in the first polar solvent (A1) at room temperature but insoluble in The second polar solvent (A2) is insoluble in the heat-resistant resin (C) of the mixed solvent, and the heat-resistant resin (C) is dispersed in a solution containing the mixed solvent and the heat-resistant resin (B). 2. The resin paste of claim 1, wherein a difference between a boiling point of the first polar solvent (A1) and a boiling point of the second polar solvent (A2) is 1 〇 to 1 〇 (TC 〇 3. as in claim 1 or a resin paste according to 2, wherein the heat resistant resin (B) and the heat resistant resin (C) are each independently selected from the group consisting of a polyamide resin, a polyimide resin, a polyamide resin, or a polyruthenium. The resin paste according to any one of claims 1 to 3, wherein the aforementioned heat-resistant resin (C) dispersed in the solution is an average particle. A method of producing a solar cell having a diameter of 50 μm or less. 5. A method for producing a solar cell, comprising the steps of: printing a resin paste screen according to any one of claims 1 to 4 on a substrate having a negative electrode and a positive electrode; The step on the side of the electrode of the material, -47-201245312, the step of heating and drying the previously printed resin paste by screen printing at 100 to 450 ° C. 6. A solar cell by the method of claim 5 Method and manufacturer. 7. A resin film, which comprises the following steps Formed by a method of the method, and having a surface roughness of 2 μm or less; the step of printing the resin paste stencil on the substrate according to any one of claims 1 to 4, and heating the stencil at 100 to 450 ° C A step of printing the aforementioned resin paste. A semiconductor device comprising the resin film of claim 7. -48 -
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