201243340 五、本案备有化學式時，續掘导 無。 ％揭不最_示發明特徵的化學式 六、發明說明： 【發明所屬之技術領域】 本發明係有關於一種探針台，特 台，其係利用複數個探針對形成於如石夕:圓於―種探針 wafer)之基板上的半導 Slllc〇n 酝教罝進仃電性檢測。 【先前技術】 -般而言’半導體裳置如積體電路元 複數個製程單元於如矽 了精由重複 半導體裝置可藉由重複執> ▲上而製造。舉例來說， 形成於基板上、钱刻積過程以在基板上形成層而 程或擴散過程以植::::：案於層上、離子植入過 及冲洗過程以從基板上面移除殘留物等等 電性檢測程序可在半導 / 體裝置進行電性檢、％成於基板上後對半導 探針卡進行以及心哭用#糟由具有複數個探針之 子訊號。 Μ'用以透過探針對半導體裝置提供電 探針台可包括-處理腔室， 支撐基板，以及_探斜… U於處理腔室以 成於基板上之半導==複數個探針，配置成可與形 干导體装置相接觸。 電性檢測程序可分為高溫程序及低溫程序，探針台可 201243340 包括一加熱器用以加熱夾具以及一夾具冷卻模組用以冷卻 爽具’更進一步’探針台可包括乾氣體供應段部，用以供 應乾氣體至處理腔室中以避免處理腔室發生結露（dew condensation)的情形。 央具冷部模組可供應具有約_8〇 〇c溫度之冷卻劑 (refrigerant)進入形成於夾具之冷卻管路（c〇〇Hng channel)中，以允許冷卻劑流過，也就是說，冷卻劑在夾 具及夾具冷卻模組之間循環，則夹具因此被冷卻。 同時，隨著時間的經過，冷卻劑將逐漸消耗，因此需 要定期地補充冷卻劑，舉例來說，當冷卻劑流經冷卻管路 時，冷卻劑可能會在冷卻管路中蒸發（vap〇r ized)及可能會 洩露出（leak out)炎具外。 容 内 明 發 rk 有鑑於此，本發明之實施例提供一種探針台，具有改 良之夾具冷卻模組。 依據本發明之一實施例，探針台可包括一處理腔室， 一夾具設置於處理腔室中以支撐一基板，一探針卡具有複 數個探針以對形成於基板上之半導體裝置進行電性檢測， 一加熱器用以加熱夾具，以及一夾具冷卻模組用以冷卻夹 具，夾具冷卻模組可冷卻一乾氣體並將冷卻之乾氣體供應 到形成在夾具之一冷卻管路中，使得冷卻之乾氣體可流過 冷卻管路。 依據本發明之一實施例，冷卻管路可具有一入口與失 4 201243340 具冷卻模相；奎 、，、連接以及一出口用以自夾具排出乾氣體，自 口為t Φ夕私 c氧體被重新供給到處理腔室。 :依據本發明之一實施例，探針台可更包括一噴嘴用以 ；^ 排出之乾氣體重新供給到處理腔室，以及一重新 供、° $用以連接冷卻管路之出口及喷嘴。 β〇 康本^明之一實施例，探針台可更包括一溫度調節 單兀連接至重新供給管，用以調整流過重新供給管之乾氣 體的溫度。 、 依據本發明之一實施例，溫度調節單元可包括—第二 力.、、、器用以加熱流過重新供給管之乾氣體。 、。依據本發明之—實施例，溫度調節單元可更包括—感 測态’用以感測流過重新供給管之乾氣體的溫度。 依據本發明之一實施例，溫度調節單元可包括—第二 加熱器用以加熱流過重新供給管之乾氣體，一冷卻器用以 冷卻流過重新供給管之乾氣體，以及—感測器用以感測流 過重新供給管之乾氣體的溫度。 …依據本發明之一實施例，探針台可更包括一第三加熱 益連接至一供應管，供應管連接失具及夾具冷卻模組，第 三加熱器加熱被供應至失具之乾氣體，在此，當乾氣體被 第二加熱器加熱時，夾具冷卻模組的操作停止。 依據上述之本發明之實施例，乾氣體被作為冷卻氣體 以冷卻夾具，則習知技術中會發生之冷卻劑（refngerant) 露的問題則可被消除。 更進-步，從失具排出之乾氣體可被重新供給到處理 201243340 腔至中，則操作探針台之所需成本可被減少。更特別的是， 被重新供給到處理腔室之乾氣體的溫度可以被溫度調節單 元所調整，則調整處理腔室溫度之所需時間可以被縮短。 更進一步，被供應至失具之乾氣體可以被第三加熱器 加熱’則將夾具加熱之所需時間可以被縮短。 本發明具體之實施例揭示之形態内容將配合圖示加以 詳細說明。 【實施方式】 以下將特舉數個具體之較佳實施例，並配合所附圖式 做詳細說明，圖上顯示數個實施例。然而，本發明可以許 多不同形式實施’不局限於以下所述之實施例，在此提供 之實施例可使得揭露得以更透徹及完整，以將本發明之範 圍完整地傳達予同領域熟悉此技藝者，在圖示中，層（layer) 和區域（region)之尺寸及相對尺寸可能會擴大，藉以清楚 明確地顯示。 可以理解的是，當一元件或層被說明為”在上（on)’’ 或”連接至（connect to)”另一元件或層時，其可以是直 接在上或連接至另一元件或層’或是間接（intervening) 在上或連接至另一元件或層，而當一元件或層被說明為” 直接在上（directly on) 或 直接連接至（directly connect to)”另一元件或層時，則中間就沒有其他的元件 或層。通篇將以相同符號代表相同元件。如同在文中所 述，”及/或（and/or)”包括了 一個或多個所列相關物之任 6 201243340 何及所有的組合。 可以理解的是，雖然在文中使用了，， ” 二、，第三，，等等以表示不同的元件 第 (component)、區域（r 〇n)、 攝件 / ,· 、 Uayer)及/或段邱201243340 V. When the case is in chemical form, continue to excavate. % of the invention is not limited to the chemical formula of the invention. Description of the Invention: [Technical Field] The present invention relates to a probe station, which is formed by using a plurality of probe pairs in a stone eve: The semi-conducting Slllc〇n on the substrate of the "propagation probe" is used to detect the electrical conductivity. [Prior Art] - As a general matter, a semiconductor device such as an integrated circuit unit is manufactured by repeating a semiconductor device by repeating the operation of a plurality of process units. For example, formed on a substrate, a money engraving process to form a layer on the substrate or a diffusion process to implant a layer::::: on the layer, ion implantation, and rinsing process to remove residues from the substrate The electrical detection program can be performed on the semiconductor device after the semiconductor device is electrically inspected, the semiconductor probe is applied to the semiconductor probe, and the sub-channel probe signal is used. Μ 'Using an probe to provide an electrical probe station to the semiconductor device through the probe may include a processing chamber, a support substrate, and a _probing ... U in the processing chamber to form a semiconductor on the substrate == a plurality of probes, configured The contact can be in contact with the shaped dry conductor device. The electrical detection program can be divided into a high temperature program and a low temperature program. The probe station can be 201243340, including a heater for heating the fixture and a fixture cooling module for cooling the cooler. Further, the probe station can include a dry gas supply section. For supplying dry gas into the processing chamber to avoid dew condensation of the processing chamber. The central heating part module can supply a refrigerant having a temperature of about _8 〇〇c into a cooling pipe (c〇〇Hng channel) formed in the jig to allow the coolant to flow, that is, The coolant circulates between the fixture and the fixture cooling module, and the fixture is thus cooled. At the same time, as time passes, the coolant will gradually be consumed, so it is necessary to replenish the coolant periodically. For example, when the coolant flows through the cooling line, the coolant may evaporate in the cooling line (vap〇r Id) and may leak out of the inflammation. In view of this, embodiments of the present invention provide a probe station having a modified fixture cooling module. According to an embodiment of the invention, the probe station may include a processing chamber, a fixture is disposed in the processing chamber to support a substrate, and a probe card has a plurality of probes for performing semiconductor devices formed on the substrate Electrical detection, a heater for heating the fixture, and a fixture cooling module for cooling the fixture, the fixture cooling module can cool a dry gas and supply the cooled dry gas to a cooling circuit formed in one of the fixtures for cooling The dry gas can flow through the cooling line. According to an embodiment of the present invention, the cooling pipeline may have an inlet and a drain 4 201243340 with a cooling mold phase; a quench, a connection, and an outlet for discharging dry gas from the fixture, and the self-porting is t Φ 夕 私It is re-supplied to the processing chamber. According to an embodiment of the invention, the probe station may further comprise a nozzle for re-supplying dry gas to the processing chamber, and a resupply, for connecting the outlet of the cooling line and the nozzle. In one embodiment of the method, the probe station may further include a temperature adjustment unit connected to the resupply tube for adjusting the temperature of the dry gas flowing through the resupply tube. According to an embodiment of the present invention, the temperature adjustment unit may include a second force, a device for heating the dry gas flowing through the resupply pipe. ,. In accordance with an embodiment of the present invention, the temperature adjustment unit may further include a sense state for sensing the temperature of the dry gas flowing through the resupply tube. According to an embodiment of the invention, the temperature adjustment unit may include a second heater for heating the dry gas flowing through the resupply tube, a cooler for cooling the dry gas flowing through the resupply tube, and a sensor for sensing The temperature of the dry gas flowing through the resupply tube is measured. According to an embodiment of the present invention, the probe station may further include a third heating benefit connected to a supply pipe, the supply pipe connection is lost and the clamp cooling module, and the third heater heat is supplied to the dry gas of the lost tool. Here, when the dry gas is heated by the second heater, the operation of the jig cooling module is stopped. According to the embodiment of the present invention described above, the dry gas is used as the cooling gas to cool the jig, and the problem of the refrigerant which may occur in the prior art can be eliminated. Further, the dry gas discharged from the lost tool can be re-supplied to process the 201243340 cavity to the middle, and the cost of operating the probe station can be reduced. More specifically, the temperature of the dry gas re-supplied into the processing chamber can be adjusted by the temperature adjustment unit, and the time required to adjust the temperature of the processing chamber can be shortened. Further, the dry gas supplied to the lost can be heated by the third heater', and the time required to heat the jig can be shortened. The details disclosed in the specific embodiments of the present invention will be described in detail with reference to the drawings. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Several specific embodiments will be described in detail below with reference to the accompanying drawings, in which FIG. However, the present invention may be embodied in many different forms, and is not limited to the embodiments described below. The embodiments provided herein may be made to provide a more complete and complete disclosure of the scope of the invention. In the illustration, the size and relative size of the layer and the region may be enlarged to show clearly and clearly. It can be understood that when an element or layer is described as "on" or "connected to" another element or layer, it can be either directly on or connected to another element or Layers are either intervening or connected to another element or layer, and when a component or layer is described as being "directly on" or directly connected to another element or In the case of a layer, there are no other elements or layers in the middle. The same symbols will be used to represent the same elements throughout. As described herein, "and/or" includes one or more of the listed items. Any combination of 6 201243340. It can be understood that although used in the text, "second, third, and so on to represent different components, components (r 〇n), camera / ,· , Uayer ) and / or Duan Qiu
(SeCt1〇n) ’這些元件、 區 又口P 這詞囊所限定，這些詞棄僅係用Λ::段部並不被 域、層及/或段部，因此，下述之第件、構件、區 β U Sr, 兀件、構件、區域、 層亦可以換作是第二元件、構件、區域、層及/ 或·^又4，而不脫離本發明之教示。 空間之相對詞彙，如，，下（1〇wer)，，、” ” 和類似詞彙箄，y· 4· . (upper)' 1彙4在本文中制以使描述時較為容易， 以說明圖示中顯示之元件或 1口可取为一TQ件或拉料 時。可以理解的是，空間相對 一、 作中的不同方位， 設將圖干… 位。舉例來說，假 ' 下顛倒時，疋件原被描述為”下，，或，，朝下” 於另一元件或特徵將會變為，，上” ,,r，s,, 、另兀件或特徵，因 此，範例中的詞囊，，下，，可以包含上和下兩個方位，裝置 可二轉向不同的方位（旋轉9Q度或其他方向），而對應於在 此指述之相對空間說明。 >在本文中使用之專業術語(termin〇logy)係僅用以特 別§兒明本發明夕眘始/ 1 ' 赞月之貫施例之用，但並不限於此。例如，在 文中，單數的形式，，一（）”、，，一（(SeCt1〇n) 'These elements, the area and the mouth P are defined by the word capsule. These words are only used for the Λ:: the section is not the domain, the layer and/or the section, therefore, the following The components, regions β U Sr, components, components, regions, layers may also be replaced with the second component, component, region, layer, and/or 4 without departing from the teachings of the present invention. The relative vocabulary of space, such as, (1〇wer),, "" and similar words 箄, y·4· . (upper)' 1 sink 4 is made in this paper to make the description easier, to illustrate When the component or one port shown in the figure can be taken as a TQ piece or a pull material. It can be understood that the space is relatively different from the one in the middle of the work. For example, when the fake 'belows upside down, the element is originally described as "down, or,, down" on another component or feature that will become, on, ", r, s,,, and Piece or feature, therefore, the word capsule, the lower, in the example can contain the upper and lower orientations, and the device can be turned to different orientations (rotation 9Q degrees or other directions), corresponding to the relative representations herein. Space Description. The terminology used in this article is used only for the specific application of the invention, but is not limited to this. For example, In the text, the singular form, one ()",,, one (
Un)和此（the)，’ 係可包，複數的形式，除非文中清楚的指示以外。可以更 勺是田說明書中使用”包含（comprises)，，及/或，， 201243340 包含（C〇mpriSing)”時，係用以說明特徵狀態（stated feature)、整體（integer)、步驟（step)、操作 (operation)、元件及/或構件之存在，但不排除存在有或 增加-或更多其他之特徵、整體、步驟、操作、元件、構 件及/或群組（group)。 在本文中提及之所有的名詞（包 除非另外有賦予定義 括技術上及科學上的名詞）皆與同領域中熟悉此技藝者一 般認知具有相同的意義，可以更理解的是，這些如在一般 字典中所定義之名詞可以被解釋成在其適當之領域中具有 與其在文中相符之意義’而不是解釋為過於理想化 (ideaiize)或過度嚴格（overlyf〇rmal)判斷，除非在文中 係如此定義。 本發日月之實施例Μ面® (cross_secti〇nal illustration)配合說明，其係用以理解實施例（及其中間 結構）之示意圖示，基於此，範例從外型之變化之結果，舉 例來說:製造技術及或/公差（tGleranGe)，其係可預期的牛。 因此’不摩巳之實施例並不能以其文中說明冑圍之特殊外型 而解釋為限制條件，而應該是包括外型誤差之結果，舉例 來說，由製造時所產生之誤差1此，在圖示中顯示的區 域係自然之示意圖，而其外型並沒有要顯示裝置之部份區 之真實外型，也沒有要限制本發明之範圍。 第1圖係顯示依據本發明之一實施例之探針台之示意 請參見第1圖，依據本發明之一實施例之探針台 8 201243340 (probe station) 100可用以對形成於如矽晶圓（si 1 icon ，{61')之基板（311]^1:1*£11:6)1〇上的半導體裝置進行電性檢 測程序。 探針台100可包括一處理腔室（process chamber)102 以提供一空間使得電性檢測程序於此進行，一夾具 (chuck) 11〇可裝設於處理腔室1〇2中以支撐基板1〇，以及 一探針卡（probe card)120可設置於夾具110的上方藉以 對半導體裝置進行電性檢測。 夾具110可設置於一平台（stage) 104上，平台104設 置於一驅動段部（driving sect ion) 106上以水平及垂直地 移動爽具110 ^探針卡120可具有複數個探針（pr〇be)122 配置成可與半導體裝置接觸，藉以施加電子訊號於半導體 裝置。驅動段部106可垂直地移動夾具11〇以允許探針122 與半導體裝置相接觸，同時，儘管圖上未顯示，探針卡12〇 係與一測試器（tester)電性連接藉以提供電子訊號。 電性檢測程序可分為高溫程序及低溫程序，舉例來 說，高溫程序可在大約⑽它至150t進行，低溫程序可在 大約-4 0 °C進行。 為了進行高溫程序及低溫程序，探針台丨〇〇可包括加 熱器（heater)i30以加熱夾具11〇以及夾具冷卻模組 (chuck cooling module)14〇 以冷卻失具 11〇。舉例來說， 加熱器130可設置於夾具11〇中且可包括電阻線 (electrical resistance wire)，更進一步冷卻管路 (cooling channel )112可形成於夾具11〇中，透過其可施 201243340 加冷卻氣體以冷卻夾具11 0。 第2圖係顯示第1圖中之夾具之平面示意圖。 請參見第2圖’冷卻管路112可具有螺旋外型（spiral shape)以均勻地冷卻夹具11 〇，在本例中，冷卻管路ι】2 的入口（inlet)114可設置於夾具11〇的中央部份（central portion)，而冷卻管路112的出口（out let) 116則可設置 於夾具110的邊緣部份（edge portion)。然而，夾具 中冷卻管路112的外型可視需要而改變，也因此，本發明 之範圍不會受限於冷卻管路112的外型。 夾具冷卻模組140可利用乾氣體（dry air)作為冷卻氣 體，更具體的來說，夾具冷卻模組140可將乾氣體冷卻且 接著將冷卻的乾氣體供應至夾具丨丨〇中，舉例來說，爽具 冷卻模組140可將乾氣體冷卻至大約-6(rc的溫度且接著 將冷卻的乾氣體供應至冷卻管路丨i 2中。 透過冷卻管路112之入口 114所供應之乾氣體在流經 冷卻管路112之後由冷卻管路112之出口 116排出，同時， 乾氣體具有約-7〇°c之露點（dew point)。 經由出口 116所排出之乾氣體可被重新供給 (resupply)至處理腔室ι〇2中，藉以避免處理腔室ι〇2中 結露（dew condensation)。如上所述，用以冷卻夾具11〇 之乾氣體可被重新利用以避免處理腔室丨〇2中發生結露的 清形’且操作探針台1 〇 〇之所需成本亦可被減少。 同時’冷卻管路11 2之入口 114可藉由用以供應乾氣 之供應管（supply tube)142而與夾具冷卻模組140連 10 201243340 接’儘管圖上未顯示’―用以控制乾氣體流動速度之流動 控制閥（flQW _trQl valve)、—用以移除乾氣體中之雜 質（impurity)之過濾器（f ilter)等等皆可設置於供應管 142。 一 e 更進一步，探針台100可包括一噴嘴（η〇ζζ1〇ΐ5〇用 以將乾氣體重新供給至處理腔室1〇2以及一重新供給管 (resupply tube)152用以將喷嘴150與冷卻管路112之出 口 116連接。舉例來說，四個用以重新供給乾氣體之喷嘴 150可設置成環繞著在處理腔室1〇2中之失具ιι〇，並藉由 分流管（diverging tube)而連接至重新供給管152。然而， 噴嘴150的數量與位置可視需要而改變，也因此，本發明 之範圍不會受限於喷嘴15 〇的數量與位置。 一酿度 §周節單元（temperature adjusting unit)160 可設置於重新供給管1 52以調節流經重新供給管丨52之乾 氣體的溫度。舉例來說，溫度調節單元丨6〇可將乾氣體的 溫度調整成室溫（room temperature)，溫度調節單元16〇 可包括一第二加熱器（second heater) 1 62以加熱乾氣體， 更進一步’溫度调卽單元可包括一感測器（sens〇r)i64 以量測乾氣體的溫度。 依據本發明之另一實施例，溫度調節單元 (temperature adjusting unit)260 可包括一第二加熱器 (second heater) 262 以加熱乾氣體、一冷卻器（cooler)264 以冷卻乾氣體以及一感測器（s e n s 〇 r) 2 β 6以量測乾氣體的 溫度，如第3圖中所示。溫度調節單元260可調整被重新 11 201243340 供，..口至處理腔至1 G 2中之乾氣體的溫度，則調整處理腔室 102之皿度之所需時間，也就是處理腔室之製程溫度， 亦可以被縮短。 依據本發明之又另-實施例，-第三加熱器（third heater)144可設置於供應管142以加熱欲供應至夾具ιι〇 之乾氣體’第三加熱器144可被用於加熱夾具ιι〇。在本 例中’夾具冷卻模、組14G的操作需要停止而被第三加熱 器144加熱之乾氣體則被供應至夾具ιι〇，因此，將夾具 11〇加熱至製程溫度之所需時間可以被縮短。 依據上述之本發明之實施例，探針台1 可使用乾氣Un) and (the), ' can be in the form of a plural, unless expressly indicated in the text. It can be used in the field manual "comprises,, and/or, 201243340 includes (C〇mpriSing)", which is used to describe the characteristic feature, the integer, and the step. The existence of operations, components and/or components, but does not exclude the presence or addition of one or more features, integers, steps, operations, components, components and/or groups. All the nouns mentioned in this article (including unless otherwise defined as technical and scientific terms) have the same meaning as those of those skilled in the art, and it is better understood that these A noun defined in a general dictionary can be interpreted as having a meaning in its appropriate field that corresponds to its meaning in the text' rather than being interpreted as an idealized or overly strict (overlyf〇rmal) judgment, unless it is in the text. definition. The cross-section of the present invention (cross_secti〇nal illustration) is used to explain the schematic diagram of the embodiment (and its intermediate structure). Based on this, the results of the example change from the appearance are as examples. To say: manufacturing technology and / / tolerance (tGleranGe), which is expected cattle. Therefore, the embodiment of 'not ambiguous' can not be interpreted as a limitation by the special appearance described in the text, but should be the result including the error of the appearance, for example, the error generated by the manufacturing, The area shown in the figures is a natural schematic, and its appearance does not indicate the true appearance of a portion of the device, nor does it limit the scope of the invention. 1 is a schematic view showing a probe station according to an embodiment of the present invention. Referring to FIG. 1, a probe station 8 201243340 (probe station) 100 according to an embodiment of the present invention can be used to form a pair of crystals. The semiconductor device on the substrate (311]^1:1*£11:6) of the circle (si 1 icon , {61') is electrically tested. The probe station 100 can include a process chamber 102 to provide a space for electrical detection procedures to be performed, and a chuck 11 can be mounted in the processing chamber 1 to support the substrate 1 A probe card 120 can be disposed above the clamp 110 to electrically detect the semiconductor device. The jig 110 can be disposed on a stage 104. The platform 104 is disposed on a driving sect ion 106 to move the slick 110 horizontally and vertically. The probe card 120 can have a plurality of probes (pr The )be) 122 is configured to be in contact with the semiconductor device to apply an electronic signal to the semiconductor device. The driving segment portion 106 can vertically move the clamp 11 〇 to allow the probe 122 to be in contact with the semiconductor device. Meanwhile, although not shown, the probe card 12 is electrically connected to a tester to provide an electronic signal. . The electrical test procedure can be divided into a high temperature program and a low temperature program. For example, the high temperature program can be performed at about (10) to 150t, and the low temperature program can be performed at about -40 °C. In order to perform the high temperature program and the low temperature program, the probe stage may include a heater i30 to heat the jig 11 〇 and a chuck cooling module 14 〇 to cool the dislocation 11 〇. For example, the heater 130 may be disposed in the clamp 11A and may include an electrical resistance wire, and a further cooling channel 112 may be formed in the clamp 11 through which the cooling may be applied 201243340 The gas is cooled to the fixture 110. Fig. 2 is a plan view showing the jig in Fig. 1. Referring to Fig. 2, the cooling duct 112 may have a spiral shape to uniformly cool the jig 11 〇. In this example, an inlet 114 of the cooling duct ι 2 may be disposed at the jig 11 The central portion of the cooling duct 112 may be disposed at an edge portion of the clamp 110. However, the shape of the cooling line 112 in the jig can be varied as desired, and therefore, the scope of the present invention is not limited by the shape of the cooling line 112. The fixture cooling module 140 can utilize dry air as a cooling gas. More specifically, the fixture cooling module 140 can cool the dry gas and then supply the cooled dry gas to the fixture, for example. The cool cooling module 140 can cool the dry gas to a temperature of about -6 (rc and then supply the cooled dry gas to the cooling line 丨i 2 . The dry supply through the inlet 114 of the cooling line 112 The gas is discharged from the outlet 116 of the cooling line 112 after flowing through the cooling line 112, while the dry gas has a dew point of about -7 ° C. The dry gas discharged through the outlet 116 can be re-supplied ( Resupply) to the processing chamber ι〇2 to avoid dew condensation in the processing chamber ι2. As described above, the dry gas for cooling the jig 11 can be reused to avoid processing the chamber 丨〇 The dew condensation clearing occurs in 2 and the cost required to operate the probe station 1 can also be reduced. Meanwhile, the inlet 114 of the cooling line 11 2 can be supplied by a supply tube for supplying dry gas. 142 and connected to the fixture cooling module 140 1 0 201243340 Connected 'although not shown on the map' - flow control valve (flQW _trQl valve) for controlling the flow rate of dry gas, filter (filter) for removing impurities in dry gas, etc. Both can be disposed in the supply tube 142. Further, the probe station 100 can include a nozzle (n〇ζζ1〇ΐ5〇 for re-supplying dry gas to the processing chamber 1〇2 and a resupply tube) 152 is used to connect the nozzle 150 to the outlet 116 of the cooling line 112. For example, four nozzles 150 for re-supplying dry gas may be disposed to wrap around the processing chamber 1〇2. And connected to the resupply tube 152 by a diverging tube. However, the number and position of the nozzles 150 may be changed as needed, and therefore, the scope of the present invention is not limited by the number and position of the nozzles 15 A brewing degree § temperature adjusting unit 160 may be provided to the resupply tube 1 52 to regulate the temperature of the dry gas flowing through the resupply tube 52. For example, the temperature adjusting unit 丨6〇 may be dried Gas The temperature adjustment unit 16〇 may include a second heater 1 62 to heat the dry gas, and further the 'temperature adjustment unit may include a sensor (sens〇r I64 to measure the temperature of the dry gas. According to another embodiment of the present invention, the temperature adjusting unit 260 may include a second heater 262 to heat the dry gas, a cooler (cooler) 264 to cool the dry gas and a sensor (sens 〇r) 2 β 6 to measure the temperature of the dry gas, as shown in Figure 3. The temperature adjustment unit 260 can adjust the temperature of the dry gas supplied to the processing chamber to the 1 G 2 by the 11 201243340, and adjust the time required for processing the chamber 102, that is, the processing of the processing chamber. The temperature can also be shortened. According to still another embodiment of the present invention, a third heater 144 may be disposed in the supply tube 142 to heat the dry gas to be supplied to the jig. The third heater 144 may be used to heat the jig. Hey. In this example, the 'clamp cooling mold, the operation of the group 14G needs to be stopped, and the dry gas heated by the third heater 144 is supplied to the jig, so that the time required to heat the jig 11 至 to the process temperature can be shorten. According to the embodiment of the invention described above, the probe station 1 can use dry gas
體作為冷卻氣體以；入么n + H 7 P夾具110，則習知技術中會發生之 V卻ϊί丨（ref r igerant)洩露的問題則可被消除。 步彳足夾具11〇排出之乾氣體可被重新供給至 处理腔至1 02中’則操作探針台i。〇之所需成本可被減少。 更特別的是’被重新供給至處理腔室1〇2之乾氣體的溫度 可以被溫度調節單元16〇所調整’則調整處理腔室1〇2至 製程溫度之所需時間可以被縮短。 進步被供應至夾具110之乾氣體可以被第三」 熱is 14 4加执，則將土 θ , n t ‘、、f火具110加熱之所需時間可以被縮短 本發明雖以較伟音& 4P + , 佳貫施例揭路如上’然其並非用以限 本發明的範圍’任何孰習垣姑益土 …白此項技藝者，在不脫離本發明 精神和範圍内，當可做些許的更動與潤飾，因此本發明 保護範圍當視後附之中請專利範圍所界定者為準。 12 201243340 【圖式簡單說明】 第1圖係顯；> & "、’、依據本發明一實〜 圖； j <探針会 第2圖係顯示第 乐1圖中之夾具之平 第3圖係顯示依據本發 施例 圖；以及 明另一實施例 面圖； 之探針爸 圖 第4圖係顯示依據本發明又-實施例之 探針爸 之示意 之示意 之示意 【主要元件符號說明】 10〜基板； 102〜處理腔室； 1 〇 〇 ~探針台； 104〜平台； 10 6〜驅動段部； 110〜夹具； 112〜冷卻管路； 114〜入口； 116〜出口； 122〜探針； 120〜探針卡； 130〜加熱器； 140〜夾具冷卻模組； 142〜供應管； 144〜第三加熱器； 150〜噴嘴； 152〜重新供給管； 1 6 0〜溫度調節單 1 62〜第二加熱器； 164〜感測器； 260〜溫度調節單元； 262〜第二加熱器 264〜冷卻器； 6 6〜感測器。 13The body acts as a cooling gas; if it is incorporated into the n + H 7 P fixture 110, the problem of V ϊ 丨 丨 (ref r igerant) leakage that occurs in the prior art can be eliminated. The dry gas discharged from the step foot gripper 11 can be re-supplied to the processing chamber to 102' to operate the probe station i. The cost required can be reduced. More specifically, the temperature of the dry gas re-supplied to the processing chamber 1〇2 can be adjusted by the temperature adjusting unit 16', and the time required to adjust the processing chamber 1〇2 to the process temperature can be shortened. The progress of the dry gas supplied to the jig 110 can be increased by the third "heat" 14 4, and the time required to heat the soil θ, nt ', and the f fire 110 can be shortened. 4P + , the best example of the application is as described above. 'It is not intended to limit the scope of the invention'. Anyone who is skilled in the art can do this without departing from the spirit and scope of the present invention. There are a few changes and refinements, so the scope of protection of this invention is subject to the definition of patent scope. 12 201243340 [Simple description of the drawing] Fig. 1 shows the outline; >&", ', according to the present invention, a real ~ figure; j < probe will be the second figure showing the fixture in the first picture Figure 3 is a diagram showing the embodiment according to the present invention; and another embodiment is shown; Figure 4 of the probe dad diagram shows the schematic diagram of the schematic diagram of the probe dad according to the embodiment of the present invention. Main component symbol description] 10~substrate; 102~processing chamber; 1 〇〇~probe station; 104~platform; 10 6~drive section; 110~clamp; 112~cooling pipeline; 114~inlet; 116~ Outlet; 122~probe; 120~probe card; 130~heater; 140~clamp cooling module; 142~ supply tube; 144~third heater; 150~ nozzle; 152~re-supply tube; 1 6 0 ~ Temperature adjustment single 1 62 ~ second heater; 164 ~ sensor; 260 ~ temperature adjustment unit; 262 ~ second heater 264 ~ cooler; 6 6 ~ sensor. 13