TWI722412B - Substrate treatment method and substrate treatment apparatus - Google Patents

Abstract

A substrate treatment method includes a temperature adjusting step (S2) and a treating step (S3). In the temperature adjusting step (S2), the temperature of a substrate holding section (7) that holds and rotates a substrate (W) is adjusted by supplying a fluid (FL) to the substrate holding section (7). In the treating step (S3), the substrate (W) is treated with a treatment liquid. The substrate holding section (7) includes a spin base (71) that rotates and a plurality of chuck members (70). The chuck members (70) are provided on the spin base (71) and hold the substrate (W). In the temperature adjusting step (S2), the fluid (FL) is supplied to the spin base (71) to adjust the temperature of the spin base (71).

Description

Substrate processing method and substrate processing device

The present invention relates to a substrate processing method and a substrate processing apparatus.

The substrate processing apparatus described in Patent Document 1 is a monolithic apparatus for performing etching processing of a silicon nitride film on a wafer. The etching process is a process for selectively etching the silicon nitride film from the surface of the wafer. In the etching process, an aqueous phosphoric acid solution is used as an etching solution.

Specifically, the substrate processing apparatus supplies a phosphoric acid aqueous solution to the surface of the wafer, and forms a liquid film of the phosphoric acid aqueous solution on the surface of the wafer held by the rotating chuck. Then, the substrate processing apparatus heats the liquid film of the phosphoric acid aqueous solution with a hot plate to raise the temperature of the phosphoric acid aqueous solution. As a result, the reaction rate of the phosphoric acid aqueous solution to the silicon nitride film is increased, and the etching rate can be increased.

[Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. 2015-53333

The inventor of the present invention focused on further suppressing the variation of the etching rate between the plural wafers in a single-chip substrate processing apparatus, and further suppressing the deviation of the processing result between the plural wafers. Particularly in recent years, there have been cases where it is required to suppress slight deviations in the processing results between a plurality of wafers.

Moreover, the inventor of the present case discovered that in a single-chip substrate processing apparatus, if a high-temperature processing liquid such as an aqueous phosphoric acid solution is used to continuously etch a plurality of wafers, the heat radiation (heat radiation) of the processing liquid The heat accumulates in the base of the rotation. Furthermore, it was found that due to the influence of the heat accumulated in the rotating base, the etching rate may gradually increase every time a substrate is processed.

In other words, it was discovered that due to the influence of heat accumulated in the rotating base, the processing speed may slightly change between the plurality of substrates.

Therefore, the inventor of the present case has conducted intensive research on the substrate processing method and the substrate processing apparatus from the viewpoint of the heat accumulation of the spin base.

The present invention was made in view of the above-mentioned problems, and an object thereof is to provide a substrate processing method and a substrate processing apparatus that can suppress changes in processing speed between a plurality of substrates.

The substrate processing method according to one aspect of the present invention includes a temperature adjustment step and a processing step. In the temperature adjustment step, a fluid is supplied to the substrate holding portion that rotates while holding the substrate, and the temperature of the substrate holding portion is adjusted. In the processing step, the substrate is processed with a processing liquid.

Preferably, in the substrate processing method of the present invention, the substrate holding portion includes a rotating base that rotates, and a plurality of jig members. Preferably, a plurality of clamp members are provided on the rotation base to hold the substrate. Preferably, in the temperature adjustment step, the fluid is supplied to the rotating base to adjust the temperature of the rotating base.

Preferably, in the substrate processing method of the present invention, the above-mentioned temperature adjustment step is performed as a separate step in a time zone different from the above-mentioned processing step.

Preferably, in the substrate processing method of the present invention, the above-mentioned temperature adjustment step is performed in parallel with a step different from the above-mentioned processing step or in parallel with the above-mentioned processing step.

Preferably, the substrate processing method of the present invention further includes a washing step of washing the substrate, and a drying step of drying the substrate. Preferably, the number of rotations of the substrate holding portion in the temperature adjustment step is lower than the number of rotations of the substrate holding portion in the cleaning step, the drying step, or the processing step.

Preferably, in the substrate processing method of the present invention, the temperature adjustment step is performed as a step preceding the processing step.

Preferably, in the substrate processing method of the present invention, in the temperature adjustment step, in parallel with supplying the fluid to the substrate holding portion, the back surface of the substrate surface and the back surface is supplied with the same fluid as the fluid or Different fluids.

Preferably, in the substrate processing method of the present invention, the temperature adjustment step includes: a step of measuring the temperature of the substrate holding portion; and, based on the temperature of the substrate holding portion, measuring the fluid supplied to the substrate holding portion Steps to control.

Preferably, in the substrate processing method of the present invention, the step of controlling the fluid includes: determining whether the temperature of the substrate holding portion is higher than a first threshold; and determining whether the temperature of the substrate holding portion is When the value is higher than the first threshold value, the step of supplying the fluid to the substrate holding portion and cooling the substrate holding portion until the temperature of the substrate holding portion reaches the first predetermined temperature. Preferably, the above-mentioned first predetermined temperature indicates a temperature below the temperature indicated by the above-mentioned first threshold value.

Preferably, in the substrate processing method of the present invention, the step of controlling the fluid includes: determining whether the temperature of the substrate holding portion is higher than a first threshold; and determining whether the temperature of the substrate holding portion is higher than Step 2 threshold. Preferably, the temperature indicated by the second threshold is higher than the temperature indicated by the first threshold. Preferably, the step of controlling the fluid further includes: when it is determined that the temperature of the substrate holding portion is not higher than the second threshold value and higher than the first threshold value, supplying the fluid having a first flow rate to the A step of cooling the substrate holding portion until the temperature of the substrate holding portion becomes the first predetermined temperature; and when determining that the temperature of the substrate holding portion is higher than the second threshold value, the step of setting the second flow rate A step of supplying a fluid to the substrate holding portion and cooling the substrate holding portion until the temperature of the substrate holding portion reaches the first predetermined temperature. Preferably, the second flow rate is greater than the first flow rate, and the first predetermined temperature indicates a temperature below the temperature indicated by the first threshold.

Preferably, in the substrate processing method of the present invention, the step of controlling the fluid includes: determining whether the temperature of the substrate holding portion is lower than a third threshold; and determining whether the temperature of the substrate holding portion is lower than In the case of the third threshold, the step of supplying the fluid to the substrate holding portion and heating the substrate holding portion until the temperature of the substrate holding portion reaches a second predetermined temperature. Preferably, the second predetermined temperature indicates a temperature equal to or higher than the temperature indicated by the third threshold.

Preferably, in the substrate processing method of the present invention, the step of controlling the fluid includes: determining whether the temperature of the substrate holding portion is higher than a third threshold; and determining whether the temperature of the substrate holding portion is higher than the third threshold. 4 threshold steps. Preferably, the temperature indicated by the fourth threshold is lower than the temperature indicated by the third threshold. Preferably, the step of controlling the fluid further includes: when it is determined that the temperature of the substrate holding portion is not lower than the fourth threshold value and lower than the third threshold value, setting the third flow rate and the first temperature to the The step of supplying fluid to the substrate holding portion and heating the substrate holding portion until the temperature of the substrate holding portion becomes the second predetermined temperature; and when it is determined that the temperature of the substrate holding portion is lower than the fourth threshold value, it will have a A step of supplying the fluid at a flow rate and/or a second temperature to the substrate holding portion, and heating the substrate holding portion until the temperature of the substrate holding portion reaches the second predetermined temperature. Preferably, the fourth flow rate is greater than the third flow rate, the second temperature is higher than the first temperature, and the second predetermined temperature represents a temperature higher than the temperature indicated by the third threshold.

Preferably, in the substrate processing method of the present invention, the second predetermined temperature indicates a saturation temperature when the temperature of the substrate holding portion is saturated.

Preferably, in the substrate processing method of the present invention, in the step of measuring the temperature of the substrate holding portion, the temperature of the substrate holding portion is measured using a thermocouple, a radiation thermometer, or an infrared thermal imager.

Preferably, in the substrate processing method of the present invention, in the temperature adjustment step, the fluid is supplied to the substrate holding portion, and the substrate holding portion is cooled.

Preferably, in the substrate processing method of the present invention, in the temperature adjustment step, the fluid is supplied to the substrate holding portion, and the substrate holding portion is heated.

Preferably, in the substrate processing method of the present invention, the flow system includes an inert gas, deionized water, or carbonated water.

Preferably, in the substrate processing method of the present invention, the processing liquid system includes phosphoric acid solution or a sulfuric acid hydrogen peroxide aqueous mixture.

According to another aspect of the substrate processing apparatus of the present invention, the substrate is processed by the processing liquid. The substrate processing apparatus is provided with a substrate holding part and a temperature adjustment mechanism. The substrate holding portion holds and rotates the substrate. The temperature adjustment mechanism supplies fluid to the substrate holding portion to adjust the temperature of the substrate holding portion.

According to the present invention, it is possible to suppress changes in the processing speed between plural substrates.

1. 1A‧‧‧Processing unit

3‧‧‧Control device

4‧‧‧Fluid supply regulator

5‧‧‧Chamber

6‧‧‧Fluid temperature adjustment part

7‧‧‧Rotating fixture (substrate holding part)

9‧‧‧Rotating motor

11, 15, 17‧‧‧Nozzle

13,19‧‧‧Nozzle moving part

21‧‧‧Fluid Supply Unit

22‧‧‧Supply Path

22a‧‧‧Exit

23‧‧‧Supply Path

23a‧‧‧Exit

24‧‧‧Supply Path

24a‧‧‧Exit

25‧‧‧Guide

26‧‧‧Unit Movement Department

27‧‧‧Temperature Measurement Department

29, 29A‧‧‧Fluid nozzle (temperature adjustment mechanism)

29a‧‧‧Exit

29b‧‧‧inclined surface

30‧‧‧Control Department

31‧‧‧Memory Department

40‧‧‧valve

41‧‧‧Flowmeter

42‧‧‧Flow control valve

60‧‧‧Supply piping

60a‧‧‧Internal space

61‧‧‧The first piping

62‧‧‧Second piping

70‧‧‧Jig component

71‧‧‧Rotating base

71a‧‧‧Through hole

71b‧‧‧surface

71c‧‧‧Back

90‧‧‧Motor body

91‧‧‧Axis

91a‧‧‧Internal space

100, 100A‧‧‧Substrate processing equipment

290‧‧‧Exit 1

291‧‧‧Exit 2

AX1‧‧‧Rotation axis

AX2‧‧‧axis of rotation

AX3‧‧‧axis of rotation

FL‧‧‧Fluid

P1, P2, P3, P4, P5, P6, P7‧‧‧Supply piping

V1, V2, V3, V4, V5, V6‧‧‧Valve

W‧‧‧Substrate

Wa‧‧‧surface

Wb‧‧‧Back

Fig. 1 is a diagram showing a substrate processing apparatus according to Embodiment 1 of the present invention.

Fig. 2 is a cross-sectional view showing the fluid nozzle of the substrate processing apparatus of the first embodiment.

Fig. 3 is a flowchart showing a substrate processing method executed by the substrate processing apparatus of the first embodiment.

Fig. 4 is a flowchart showing the temperature adjustment process of the rotating jig in step S2 of Fig. 3.

Fig. 5 is a flowchart showing a first example of fluid control in step S22 in Fig. 4.

Fig. 6 is a flowchart showing a second example of fluid control in step S22 in Fig. 4.

Fig. 7 is a flowchart showing a third example of fluid control in step S22 in Fig. 4.

Fig. 8 is a flowchart showing a fourth example of fluid control in step S22 in Fig. 4.

Fig. 9 is a flowchart showing a substrate processing method executed by the substrate processing apparatus according to the second embodiment of the present invention.

Fig. 10 is a side view showing a fluid nozzle of a substrate processing apparatus according to a third embodiment of the present invention.

Fig. 11 is a diagram showing a substrate processing apparatus according to a fourth embodiment of the present invention.

Fig. 12 is a flowchart showing a substrate processing method executed by the substrate processing apparatus of the fourth embodiment.

Fig. 13 is a flowchart showing a substrate processing method executed by the substrate processing apparatus of the fifth embodiment.

14 is a graph showing the etching rate of the substrate processing apparatus of the embodiment of the present invention and the substrate processing apparatus of the comparative example.

Hereinafter, the embodiments of the present invention will be described with reference to the drawings. In addition, the same or equivalent parts in the drawings are given the same reference numerals without repeating the description. Furthermore, in the embodiment of the present invention, the X-axis, Y-axis, and Z-axis are orthogonal to each other, the X-axis and Y-axis are parallel to the horizontal direction, and the Z-axis is parallel to the vertical direction.

(Embodiment 1)

1 to 8, the substrate processing apparatus 100 and the substrate processing method according to Embodiment 1 of the present invention will be described. First, the substrate processing apparatus 100 will be described with reference to FIG. 1. FIG. 1 is a diagram showing a substrate processing apparatus 100. As shown in FIG. 1, the substrate processing apparatus 100 processes the substrate W with a processing liquid. Specifically, the substrate processing apparatus 100 is a monolithic type that processes one substrate W at a time. The substrate W has a substantially circular plate shape.

The substrate W is, for example, a semiconductor substrate, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, a substrate for a magneto-optical disk, a substrate for a photomask, Ceramic substrates or substrates for solar cells.

The substrate processing apparatus 100 includes a processing unit 1, a control device 3, a valve V1, a supply pipe P1, a valve V2, and a supply pipe P2.

The processing unit 1 discharges the processing liquid to the substrate W and processes the substrate W. Specifically, the processing unit 1 includes a chamber 5, a rotating jig 7, a rotating motor 9, a nozzle 11, a nozzle moving part 13, a nozzle 15, and a plurality of guides 25 (in the first embodiment, two guides 25 ), the temperature measuring unit 27, and the fluid nozzle 29.

The chamber 5 has a slightly box shape. The chamber 5 contains the substrate W, the rotating jig 7, the rotating motor 9, the nozzle 11, the nozzle moving part 13, the nozzle 15, the guide 25, the temperature measuring part 27, the fluid nozzle 29, a part of the supply pipe P1, and the supply pipe P2 Part of it.

The rotating jig 7 holds and rotates the substrate W. The rotating jig 7 corresponds to an example of a substrate holding portion. Specifically, the rotating jig 7 rotates the substrate W around the rotation axis AX1 while holding the substrate W horizontally in the chamber 5.

The rotating jig 7 includes a plurality of jig members 70 and a rotating base 71. A plurality of clamp members 70 are provided on the rotating base 71. The plural clamp members 70 hold the substrate W in a horizontal posture. The rotating base 71 is substantially circular plate-shaped, and supports a plurality of clamp members 70 in a horizontal posture. The rotation motor 9 rotates the rotation base 71 around the rotation axis AX1. Therefore, the rotation base 71 rotates around the rotation axis AX1. As a result, the substrate W held by the plurality of clamp members 70 provided on the rotation base 71 rotates around the rotation axis AX1. Specifically, the rotating motor 9 includes a motor body 90 and a shaft 91. The shaft 91 is coupled to the rotation base 71. In addition, the motor body 90 rotates the rotation base 71 by rotating the shaft 91. The shaft 91 is slightly cylindrical.

The nozzle 11 discharges the processing liquid toward the substrate W while the substrate W is rotating. The treatment liquid is a chemical liquid. In this specification, the term “treatment liquid” refers to a liquid that directly contributes to the purpose of processing the substrate W among the liquids used for the treatment of the substrate W. Therefore, the processing liquid system is different from the cleaning liquid in the liquid for processing the substrate W.

For example, when the substrate processing apparatus 100 performs etching processing on the substrate W, the processing liquid system contains phosphoric acid liquid. In the case of performing an etching process, the substrate W is a semiconductor wafer on which a silicon nitride film and a silicon oxide film are formed. The so-called etching process refers to the process of selectively etching the silicon nitride film from the surface of the semiconductor wafer.

For example, when the substrate processing apparatus 100 performs photoresist removal processing on the substrate W, the processing liquid includes a sulfuric acid/hydrogen peroxide mixture (SPM). When performing the photoresist removal process, the substrate W is a semiconductor wafer on which photoresist is formed. The so-called photoresist removal process refers to the process of removing the photoresist from the surface of the semiconductor wafer.

A treatment liquid containing phosphoric acid solution or SPM is an example of a treatment liquid used at high temperatures. For example, the temperature of phosphoric acid solution is 175°C. For example, the temperature of SPM is 200°C.

The supply pipe P1 supplies the processing liquid to the nozzle 11. The valve V1 switches the start and stop of the supply of the processing liquid to the nozzle 11.

The nozzle moving part 13 rotates around the rotation axis AX2, and moves the nozzle 11 horizontally between the processing position and the standby position of the nozzle 11. The processing position indicates the position above the substrate W. The standby position indicates a position more outside than the rotating jig 7 and the guide 25.

The nozzle 15 discharges the cleaning liquid toward the substrate W while the substrate W is rotating. The washing liquid is a washing liquid or a washing liquid. The rinse liquid is, for example, any of deionized water, carbonated water, electrolyzed ionized water, hydrogen water, ozone water, and hydrochloric acid water with a dilution concentration (for example, about 10 ppm to 100 ppm). The cleaning solution is, for example, an alkaline cleaning solution. The alkaline cleaning solution is, for example, ammonia-hydrogen peroxide mixture (SC1).

The supply pipe P2 supplies the cleaning liquid to the nozzle 15. The valve V2 switches the start and stop of the supply of the cleaning liquid to the nozzle 15.

Each of the plural guides 25 has a substantially cylindrical shape. Each of the plurality of guides 25 receives the processing liquid or cleaning liquid discharged from the substrate W.

The temperature measuring unit 27 measures the temperature of the rotating jig 7. Then, the temperature measuring unit 27 outputs information indicating the temperature of the rotating jig 7 to the control device 3. Specifically, the temperature measuring unit 27 measures the temperature of the rotating base 71. Then, the temperature measuring unit 27 outputs information indicating the temperature of the rotating base 71 to the control device 3.

For example, the temperature measuring unit 27 includes a temperature sensor. The temperature sensor includes, for example, a thermocouple and a measuring device. Specifically, the thermocouple is in contact with the rotating base 71. Then, the thermocouple detects the temperature of the rotating base 71, and outputs a voltage signal corresponding to the temperature to the measuring device. The measuring device converts the voltage signal into temperature, and outputs the information indicating the temperature to the control device 3.

For example, the temperature measurement unit 27 includes a radiation thermometer. The radiation thermometer measures the intensity of infrared or visible light emitted from the rotating base 71 and measures the temperature of the rotating base 71. Then, the radiation thermometer outputs information indicating the temperature of the rotating base 71 to the control device 3.

For example, the temperature measuring unit 27 includes an infrared thermal imaging camera. Infrared thermal imaging cameras include infrared cameras. The infrared thermal imager detects the infrared rays emitted from the rotating base 71 by an infrared camera. Furthermore, the infrared thermal imager analyzes the detected infrared image and calculates the temperature of the rotating base 71. Then, the infrared thermal imager outputs information indicating the temperature of the rotating base 71 to the control device 3.

The control device 3 includes a control unit 30 and a memory unit 31. The control unit 30 includes a processor like a CPU (Central Processing Unit). The memory portion 31 includes a memory device, memory data and computer programs. Specifically, the memory portion 31 includes: a main memory device like a semiconductor memory; and an auxiliary memory device like a semiconductor memory and/or a hard disk drive device. The storage unit 31 may also include removable media. The processor of the control unit 30 executes a computer program stored in the memory device of the memory unit 31 to control the processing unit 1, the valve V1, and the valve V2.

Next, the fluid nozzle 29 will be described in detail with reference to FIGS. 1 and 2. FIG. 2 is a cross-sectional view showing the fluid nozzle 29. As shown in FIG. As shown in FIGS. 1 and 2, the fluid nozzle 29 is arranged on the rotation axis AX1. The fluid nozzle 29 corresponds to an example of the "temperature adjustment mechanism". That is, the fluid nozzle 29 supplies a fluid (hereinafter referred to as “fluid FL”) to the rotating jig 7 to adjust the temperature of the rotating jig 7.

Therefore, according to the first embodiment, for example, the rotating jig 7 can be cooled by the fluid FL. As a result, it is possible to suppress an increase in the temperature of the rotating jig 7 due to the influence of heat radiation (heat radiation) of the processing liquid. Therefore, the temperature of the rotating jig 7 during processing by the processing liquid can be maintained at a slightly constant temperature TcA. Therefore, it is possible to suppress a change in the processing rate among the plurality of substrates W. The constant temperature TcA is, for example, room temperature Trm. The room temperature Trm is, for example, the temperature in the room where the processing unit 1 is installed.

Furthermore, according to Embodiment 1, for example, the rotating jig 7 can be heated by the fluid FL. Therefore, the temperature of the rotating jig 7 during processing by the processing liquid can be maintained at a slightly constant temperature TcB. As a result, it is possible to suppress changes in the processing rate among the plurality of substrates W. In addition, the constant temperature TcB indicates a temperature higher than the room temperature Trm.

If it is possible to suppress a change in the processing rate between a plurality of substrates W, there are, for example, the following advantages. That is, when one substrate W is continuously processed at a time, it is possible to suppress the deviation of the processing results among the plurality of substrates W. In addition, for example, when performing an etching process on the substrate W, there is no need to worry about the excess silicon nitride film generation time due to the change in the etching rate, and the throughput of the substrate W can be increased. Furthermore, since the removal amount of the silicon nitride film by the processing liquid becomes constant, the deviation of the etching result among the plurality of substrates W can be suppressed. Furthermore, when the photoresist removal process is performed on the substrate W, the deviation of the photoresist removal result among the plurality of substrates W can be suppressed.

Here, the so-called processing rate refers to the processing amount of the substrate W per unit time when the substrate W is processed by the processing liquid. For example, the processing rate when the etching processing is performed on the substrate W with the processing liquid represents the etching rate. The etching rate represents the etching amount of the substrate W per unit time. For example, the processing rate when the photoresist removal process is performed on the substrate W by the processing liquid means the photoresist removal rate. The photoresist removal rate means the amount of photoresist removal per unit time.

In addition, supplying the fluid FL to the rotating jig 7 to adjust the temperature of the rotating jig 7 is particularly effective when a high-temperature processing liquid (for example, a processing liquid containing phosphoric acid solution or a processing liquid containing SPM) is used. This is because the higher the temperature of the processing liquid, the more heat is accumulated in the rotating jig 7 due to the heat radiation of the processing liquid. That is, according to the first embodiment, even when a high-temperature treatment liquid is used, the temperature rise of the rotating jig 7 can be suppressed by the cooling by the fluid FL, or by the heating by the fluid FL, The temperature of the rotating jig 7 during processing by the processing liquid is maintained at a slightly constant temperature TcB. As a result, even when a high-temperature processing liquid is used, it is possible to suppress changes in the processing rate among the plurality of substrates W.

In addition, in the first embodiment, the fluid FL used to adjust the temperature of the rotating jig 7 is liquid or gas. It is particularly preferred that the fluid FL contains inert gas, deionized water, or carbonated water. This is because even when the fluid FL contacts the substrate W, the inert gas, deionized water, and carbonated water hardly affect the substrate W. In addition, the fluid FL may be the same liquid as the cleaning liquid (rinsing liquid or cleaning chemical liquid).

Furthermore, in Embodiment 1, specifically, the fluid nozzle 29 supplies fluid to the rotating base 71 to adjust the temperature of the rotating base 71. Therefore, according to the cooling by the fluid FL, the temperature rise of the rotating base 71 can be suppressed, and the temperature of the rotating base 71 can be maintained at a certain temperature TcA; and, according to the heating by the fluid FL, the The temperature of the rotating base 71 during processing by the processing liquid is maintained at a slightly constant temperature TcB. As a result, compared to the case where only the fluid FL is supplied to the jig member 70, it is possible to suppress a change in the processing rate among a plurality of substrates W. This is because the heat capacity of the rotating base 71 is greater than that of the clamp member 70, and the heat storage of the rotating base 71 has a greater impact on the processing rate than the heat storage of the clamp member 70 has on the processing rate. Furthermore, the fluid nozzle 29 may supply the fluid FL to both the rotating base 71 and the clamp member 70.

Next, referring to Fig. 2, the fluid nozzle 29 will be described in detail. As shown in FIG. 2, the fluid nozzle 29 passes through the internal space 91a of the shaft 91 of the rotating motor 9 and the through hole 71a of the rotating base 71, and protrudes from the surface 71b in the surface 71b and the back surface 71c of the rotating base 71. The fluid nozzle 29 is opposed to the back surface Wb of the surface Wa and the back surface Wb of the substrate W. The fluid nozzle 29 is arranged with respect to the substrate W at a predetermined interval in the extending direction of the rotation axis AX1. The fluid nozzle 29 is stationary regardless of the rotation of the rotating base 71 and the shaft 91.

The fluid nozzle 29 discharges the fluid FL from the discharge port 29a, and supplies the fluid FL to the surface 71b of the rotating base 71. Then, the fluid FL spreads on the surface 71b of the rotating base 71. In particular, the fluid FL expands to the entire surface 71b of the rotating base 71 by the centrifugal force according to the rotation of the rotating base 71. The discharge port 29a opens upward. In addition, a part of the fluid FL flows along the inclined surface 29b of the fluid nozzle 29 and is supplied to the surface 71b of the rotating base 71.

Next, referring to Fig. 2, the supply of fluid to the fluid nozzle 29 will be described. As shown in FIG. 2, the substrate processing apparatus 100 is further provided with a fluid supply adjustment unit 4, a fluid temperature adjustment unit 6, and a supply pipe P7. The supply pipe P7 supplies the fluid FL to the fluid nozzle 29.

The fluid supply adjustment unit 4 adjusts the supply amount of the fluid FL to the fluid nozzle 29. Specifically, the fluid supply adjustment unit 4 includes a valve 40, a flow meter 41, and a flow adjustment valve 42. The valve 40 switches the start and stop of the supply of the fluid FL to the fluid nozzle 29. The flow meter 41 detects the flow rate of the fluid FL supplied to the fluid nozzle 29. The flow rate adjustment valve 42 adjusts the flow rate of the fluid FL supplied to the fluid nozzle 29. The processing liquid is supplied to the fluid nozzle 29 from the supply pipe P7 at a flow rate corresponding to the opening degree of the flow rate adjustment valve 42. The degree of opening indicates the degree to which the flow control valve 42 is opened. The fluid temperature adjustment part 6 adjusts the temperature of the fluid FL. The fluid temperature adjustment unit 6 includes, for example, a heater. The fluid temperature adjustment unit 6 heats the fluid FL to bring the fluid FL to a specific temperature, for example, when the rotating jig 7 is heated by the fluid FL. Moreover, when the rotating jig 7 is cooled by the fluid FL, the fluid temperature adjustment part 6 may not be provided.

Next, referring to FIGS. 1 to 3, the substrate processing method of Embodiment 1 will be described. Fig. 3 is a flowchart showing a substrate processing method. As shown in FIG. 3, the substrate processing method includes steps S1 to S6. The substrate processing method is executed by the substrate processing apparatus 100 for each substrate W.

As shown in Figs. 1 to 3, the rotating jig 7 holds the substrate W in step S1.

Next, in step S2, the control unit 30 controls the fluid supply adjusting unit 4, and the fluid nozzle 29 supplies the fluid FL to the rotating jig 7. As a result, the fluid nozzle 29 supplies the fluid FL to the rotating jig 7 to adjust the temperature of the rotating jig 7. Specifically, in step S2, the fluid nozzle 29 supplies the fluid FL to the rotating jig 7 to cool the rotating jig 7. Alternatively, in step S2, the fluid nozzle 29 supplies the fluid FL to the rotating jig 7 to heat the rotating jig 7. Step S2 is equivalent to an example of the "temperature adjustment step".

Next, in step S3, the nozzle 11 discharges the processing liquid onto the surface Wa of the substrate W, and the substrate W is processed by the processing liquid. Step S3 is equivalent to an example of the "processing step".

Next, in step S4, the nozzle 15 discharges the cleaning liquid onto the surface Wa of the substrate W to clean the substrate W. Step S3 corresponds to an example of the "washing step".

Next, in step S5, the rotating jig 7 is rotated to dry the substrate W. Furthermore, in step S5, a solvent for drying the substrate W (hereinafter referred to as a "drying solvent") may be discharged onto the surface Wa of the substrate W. The drying solvent is, for example, a liquid (low surface tension solvent) containing organic solvent components such as isopropyl alcohol (IPA), which has a lower surface tension than deionized water. Step S5 corresponds to an example of the "drying step".

Next, in step S6, the transfer robot system takes out the substrate W from the rotating jig 7.

As described above with reference to FIGS. 1 to 3, according to Embodiment 1, in step S2 (temperature adjustment step), the rotating jig 7 is cooled by the fluid FL. Therefore, the temperature rise of the rotating jig 7 due to the influence of the heat radiation of the processing liquid can be suppressed, and the temperature of the rotating jig 7 during processing by the processing liquid can be maintained at a slightly constant temperature TcA. Or, in step S2, the rotating clamp 7 is heated by the fluid FL. Therefore, the temperature of the rotating jig 7 during processing by the processing liquid can be maintained at a slightly constant temperature TcB. As described above, by step S2, it is possible to prevent the processing rate from changing among the plurality of substrates W.

In Embodiment 1, specifically, in step S2, the fluid nozzle 29 directly supplies the fluid FL to the rotating jig 7 to adjust the temperature of the rotating jig 7. More specifically, in step S2, the fluid nozzle 29 directly supplies the fluid FL to the rotating base 71 (specifically, the surface 71b of the rotating base 71) to adjust the temperature of the rotating base 71.

Furthermore, according to Embodiment 1, step S2 (temperature adjustment step) is executed between step S1 and step S3. Also, step S2 may be executed before step S1, between step S3 and step S4, between step S4 and step S5, between step S5 and step S6, or after step S6. That is, step S2 is executed as a separate step in a time zone different from step S3. Therefore, it is possible to suppress the mixing of the fluid FL with the treatment liquid, the mixing of the fluid FL with the cleaning liquid, and the mixing of the fluid FL with the drying solvent. As a result, it becomes easy to recover each of the fluid FL, the processing liquid, the cleaning liquid, and the drying solvent.

Furthermore, according to Embodiment 1, step S2 (temperature adjustment step) is executed as a step before step S3 (processing step). Therefore, when the rotating jig 7 is heated by the fluid FL, the temperature of the rotating jig 7 can be maintained at a certain temperature TcB for each substrate W even before the processing of the substrate W by the processing liquid in step S3 . As a result, it is possible to further suppress changes in the processing rate among the plurality of substrates W.

Here, it is preferable that the number of rotations of the rotating jig 7 in step S2 (temperature adjustment step) is lower than the number of rotations of the rotating jig 7 in step S3, step S4, or step S5. This is because the lower the number of rotations of the rotating clamp 7 in step S2, the easier the fluid FL stays on the surface 71b of the rotating base 71, and the rotating base 71 can be effectively cooled or heated by the fluid FL. Furthermore, the number of rotations of the rotating clamp 7 represents the number of rotations (rpm) of the rotating clamp 7 per unit time.

Specifically, it is preferable that the number of rotations N1 (for example, 10 rpm) of the rotating clamp 7 in step S2 is lower than the number of rotations N5 (for example, 1500 rpm) of the rotating clamp 7 in step S5, and it is more preferable that The rotation number N4 (for example, 1000 rpm) of the rotating clamp 7 in step S4 is low, and it is more preferable to be lower than the rotation number N3 (for example, 200 rpm) of the rotating clamp 7 in step S3.

Furthermore, it is preferable that in step S2 (temperature adjustment step), the fluid nozzle 29 supplies the fluid FL to the rotating jig 7 at a flow rate that does not affect the temperature of the substrate W. For example, in step S2, the fluid FL is supplied to the rotating jig 7 without directly contacting the substrate W by the fluid nozzle 29.

Next, referring to FIGS. 1 to 4, step S2 of FIG. 3 will be described in detail. Fig. 4 is a flowchart showing the temperature adjustment process of the rotating jig in step S2 of Fig. 3. As shown in FIG. 4, the rotating jig temperature adjustment process includes step S21 and step S22.

As shown in FIGS. 1, 2 and 4, in step S21, the temperature measuring part 27 measures the temperature Tsp of the rotating jig 7 (specifically, the rotating base 71). The control unit 30 receives information indicating the temperature Tsp of the rotating jig 7 from the temperature measurement unit 27 at predetermined intervals.

In step S22, the control unit 30 controls the fluid FL supplied to the rotating jig 7 based on the temperature Tsp of the rotating jig 7. Therefore, according to the first embodiment, the temperature of the rotating jig 7 can be monitored, and the fluid FL can be reliably controlled in accordance with the temperature of the rotating jig 7. Step S22 is equivalent to an example of the "step of controlling the fluid FL".

Specifically, in step S22, the control unit 30 controls the fluid supply adjusting unit 4 and/or the fluid temperature adjusting unit 6 based on the temperature Tsp of the rotating jig 7 to control the fluid FL supplied from the fluid nozzle 29 to the rotating jig 7. Therefore, the fluid nozzle 29 supplies the fluid FL to the rotating jig 7 under the control based on the temperature Tsp. By completing step S22, the temperature adjustment process of the rotating jig is completed. Then, the processing returns to the main routine of FIG. 3, and proceeds to step S3.

Furthermore, in step S21, a thermocouple, radiation thermometer, or infrared thermal imager can be used to measure the temperature of the rotating fixture 7. In the case of using a thermocouple, since the temperature Tsp of the rotating jig 7 can be measured with high accuracy, the fluid FL can be controlled more reliably. In the case of using a radiation thermometer, the temperature Tsp of the rotating jig 7 can be easily measured. In the case of using an infrared thermal imager, since the temperature distribution of the rotating clamp 7 can be measured, the fluid FL can be controlled in accordance with the temperature distribution of the rotating clamp 7. The temperature distribution of the rotating jig 7 measured by the infrared thermal imager indicates the heat storage condition of the rotating jig 7.

Next, referring to FIG. 1, FIG. 2, FIG. 4, and FIG. 5, an example of step S22 in FIG. 4 will be described. Fig. 5 is a flowchart showing a first example of fluid control in step S22 in Fig. 4. As shown in FIG. 5, the fluid control system of the first example includes steps S31 to S34.

As shown in FIGS. 1, 2 and 5, in step S31, the control unit 30 determines whether the temperature Tsp of the rotating jig 7 is higher than the first threshold TH1.

If the determination in step S31 is negative (No), the processing returns to the subroutine of FIG. 4, then returns to the main routine of FIG. 3, and proceeds to step S3.

On the other hand, if the determination in step S31 is affirmative (Yes), the process proceeds to step S32.

In step S32, the control unit 30 controls the fluid supply adjusting unit 4 so that the fluid nozzle 29 supplies the fluid FL to the rotating jig 7 to cool the rotating jig 7.

In step S33, the control unit 30 determines whether the temperature Tsp of the rotating jig 7 has reached the first predetermined temperature T1. The first predetermined temperature T1 indicates a temperature below the temperature indicated by the first threshold value TH1. The first predetermined temperature T1 is, for example, room temperature Trm.

If it is determined as negative (No) in step S33, the process returns to step S32.

On the other hand, if it is determined as affirmative (Yes) in step S33, the process proceeds to step S34.

In step S34, the control unit 30 controls the fluid supply adjustment unit 4 in such a manner that the supply of the fluid FL from the fluid nozzle 29 to the rotating jig 7 is stopped. By completing step S34, the fluid control according to the temperature Tsp of the rotating clamp 7 is completed. Then, the processing returns to the subroutine of FIG. 4, and then returns to the main routine of FIG. 3, and proceeds to step S3.

As described above with reference to FIG. 5, according to the first embodiment, when it is determined that the temperature Tsp of the rotating jig 7 is higher than the first threshold TH1 (Yes in step S31), the fluid nozzle 29 supplies the fluid FL to the rotating jig 7. , Cooling the rotating jig 7 until the temperature of the rotating jig 7 reaches the first predetermined temperature T1. Therefore, when the substrate W is continuously processed one at a time, the temperature rise of the rotating jig 7 can be further suppressed. As a result, it is possible to further suppress changes in the processing rate among the plurality of substrates W.

Next, referring to FIG. 1, FIG. 2, FIG. 4, and FIG. 6, an example of step S22 in FIG. 4 will be described. Fig. 6 is a flowchart showing a second example of fluid control in step S22 in Fig. 4. As shown in Fig. 6, the fluid control system of the second example includes steps S41 to S47.

As shown in FIGS. 1, 2 and 6, in step S41, the control unit 30 determines whether the temperature Tsp of the rotating jig 7 is higher than the second threshold value TH2. The temperature indicated by the second threshold TH2 is higher than the temperature indicated by the first threshold TH1 in step S44.

If the determination in step S41 is affirmative (Yes), the process proceeds to step S42.

On the other hand, if the determination in step S41 is negative (No), the process proceeds to step S44.

In step S44, the control unit 30 determines whether the temperature Tsp of the rotating jig 7 is higher than the first threshold TH1.

If the determination in step S44 is negative (No), the processing returns to the subroutine of FIG. 4, and then returns to the main routine of FIG. 3, and proceeds to step S3.

On the other hand, if the determination in step S44 is affirmative (Yes), the processing proceeds to step S45.

In step S45, the control unit 30 controls the fluid supply regulator 4 so that the fluid nozzle 29 supplies the fluid FL having the first flow rate FW1 to the rotating jig 7 to cool the rotating jig 7.

In step S46, the control part 30 determines whether the temperature Tsp of the rotating jig 7 becomes the 1st predetermined temperature T1. The first predetermined temperature T1 indicates a temperature below the temperature indicated by the first threshold value TH1. The first predetermined temperature T1 is, for example, room temperature Trm.

If the determination in step S46 is negative (No), the process returns to step S45.

On the other hand, if it is determined in the affirmative (Yes) in step S46, the processing proceeds to step S47.

After the affirmative determination in step S41, in step S42, the fluid nozzle 29 supplies the fluid FL having the second flow rate FW2 to the rotating jig 7 to cool the rotating jig 7, and the control unit 30 controls the fluid supply regulator 4. The second flow rate FW2 is greater than the first flow rate FW1.

In step S43, the control part 30 determines whether the temperature Tsp of the rotating jig 7 becomes the 1st predetermined temperature T1.

If it is determined as negative (No) in step S43, the process returns to step S42.

On the other hand, if it is determined as affirmative (Yes) in step S43, the processing proceeds to step S47.

After the affirmative determination in step S43 or step S46, in step S47, the control unit 30 controls the fluid supply adjusting unit 4 in a manner of stopping the fluid supply of the fluid nozzle 29 to the rotating jig 7. By completing step S47, the fluid control according to the temperature Tsp of the rotating clamp 7 is completed. Then, the processing returns to the subroutine of FIG. 4, and then returns to the main routine of FIG. 3, and proceeds to step S3.

As described above, as described with reference to FIG. 6, according to Embodiment 1, when it is determined that the temperature Tsp of the rotating jig 7 is not higher than the second threshold TH2 (No in step S41) and it is determined to be higher than the first threshold TH1 (in step S41) Yes in S44), the fluid nozzle 29 supplies the fluid FL having the first flow rate FW1 to the rotating jig 7, and cools the rotating jig 7 until the temperature Tsp of the rotating jig 7 becomes the first predetermined temperature T1. Therefore, as with the fluid control of the first example described with reference to FIG. 5, the temperature rise of the rotating jig 7 can be further suppressed when the substrate W is continuously processed one at a time.

Furthermore, according to the first embodiment, when it is determined that the temperature Tsp of the rotating jig 7 is higher than the second threshold TH2 (Yes in step S41), the fluid nozzle 29 supplies the fluid FL having the second flow rate FW2 to the rotating jig 7 to cool The jig 7 is rotated until the temperature Tsp of the rotating jig 7 becomes the first predetermined temperature T1. Therefore, even when the temperature Tsp of the rotating jig 7 rises a lot, by supplying the fluid FL of the second flow rate FW2 which is more than the first flow rate FW1 to the rotating jig 7, it is possible to suppress the temperature Tsp of the rotating jig 7 from becoming The time from the first predetermined temperature T1 becomes longer.

Next, referring to FIG. 1, FIG. 2, FIG. 4, and FIG. 7, still another example of step S22 in FIG. 4 will be described. Fig. 7 is a flowchart showing a third example of fluid control in step S22 in Fig. 4. As shown in FIG. 7, the fluid control system of the third example includes steps S51 to S54.

As shown in FIG. 1, FIG. 2 and FIG. 7, in step S51, the control part 30 determines whether the temperature Tsp of the rotating jig 7 is lower than the 3rd threshold value TH3.

If the determination in step S51 is negative (No), the processing returns to the subroutine of FIG. 4, then returns to the main routine of FIG. 3, and proceeds to step S3.

On the other hand, if the determination in step S51 is affirmative (Yes), the process proceeds to step S52.

In step S52, the control unit 30 controls the fluid supply adjustment unit 4 so that the fluid nozzle 29 supplies the fluid to the rotating jig 7 to heat the rotating jig 7. Furthermore, the temperature of the fluid FL is maintained at the first temperature Tft by the fluid supply regulator 4. The first temperature Tft indicates a temperature equal to or higher than the second predetermined temperature T2.

In step S53, the control unit 30 determines whether the temperature Tsp of the rotating jig 7 has reached the second predetermined temperature T2. The second predetermined temperature T2 indicates a temperature above the temperature indicated by the third threshold TH3. In addition, the second predetermined temperature T2 indicates a temperature higher than the room temperature Trm.

If it is determined as negative (No) in step S53, the process returns to step S52.

On the other hand, if the determination in step S53 is affirmative (Yes), the processing proceeds to step S54.

In step S54, the control unit 30 controls the fluid supply adjustment unit 4 so as to stop the supply of the fluid from the fluid nozzle 29 to the rotating jig 7. By completing step S54, the fluid control according to the temperature Tsp of the rotating clamp 7 is completed. Then, the processing returns to the subroutine of FIG. 4, and then returns to the main routine of FIG. 3, and proceeds to step S3.

As described above, as described with reference to FIG. 7, according to the first embodiment, when it is determined that the temperature Tsp of the rotating jig 7 is lower than the third threshold TH3 (Yes in step S51), the fluid nozzle 29 supplies the fluid FL to the rotating jig 7. , The rotating jig 7 is heated until the temperature Tsp of the rotating jig 7 becomes the second predetermined temperature T2. Therefore, when processing one substrate W at a time continuously, the temperature Tsp of the rotating jig 7 during processing by the processing liquid can be maintained at a slightly constant temperature TcB. As a result, it is possible to suppress changes in the processing rate among the plurality of substrates W. Furthermore, in the first embodiment, since step S2 (FIG. 3) is executed immediately before step S3 is executed, the constant temperature TcB is slightly equal to the second predetermined temperature T2.

Here, it is preferable that the second predetermined temperature T2 represents the saturation temperature Tst when the temperature Tsp of the rotating jig 7 (specifically, the rotating base 71) is saturated. This is because the temperature Tsp of the rotating jig 7 exceeds the saturation temperature Tst and is less likely to change. Therefore, heating the fluid FL when the saturation temperature Tst exceeds the saturation temperature Tst causes the power consumption of the fluid temperature adjustment unit 6 to be wasted. That is, by setting the second predetermined temperature T2 to the saturation temperature Tst of the rotary jig 7, the power consumption of the fluid temperature adjustment unit 6 can be suppressed. Furthermore, the second predetermined temperature T2 may be a temperature exceeding the saturation temperature Tst.

Furthermore, when the fluid FL is not supplied to the rotating jig 7, the temperature Tsp of the rotating jig 7 is gradually increased every time a substrate W is processed due to the influence of the heat radiation of the processing liquid. Then, when the number of processed pieces required in the experiment is exceeded, the temperature Tsp of the rotating jig 7 becomes constant and saturated. The temperature Tsp becomes constant and the temperature at saturation is the saturation temperature Tst.

Next, another example of step S22 in FIG. 4 will be described with reference to FIG. 1, FIG. 2, FIG. 4, and FIG. 8. Fig. 8 is a flowchart showing a fourth example of fluid control in step S22 in Fig. 4. As shown in FIG. 8, the fluid control system of the fourth example includes steps S61 to S67.

As shown in FIG. 1, FIG. 2 and FIG. 8, in step S61, the control part 30 determines whether the temperature Tsp of the rotating jig 7 is lower than the 4th threshold value TH4. The temperature indicated by the fourth threshold TH4 is lower than the temperature indicated by the third threshold TH3 in step S64.

If the determination in step S61 is affirmative (Yes), the process proceeds to step S62.

On the other hand, if the determination in step S61 is negative (No), the process proceeds to step S64.

In step S64, the control unit 30 determines whether the temperature Tsp of the rotating jig 7 is lower than the third threshold TH3.

If the determination in step S64 is negative (No), the processing returns to the subroutine of FIG. 4, and then to the main routine of FIG. 3, and proceeds to step S3.

On the other hand, if the determination in step S64 is affirmative (Yes), the processing proceeds to step S65.

In step S65, the fluid nozzle 29 supplies the fluid FL having the third flow rate FW3 and the first temperature Tft to the rotating jig 7 to heat the rotating jig 7, and the control unit 30 controls the fluid supply regulator 4 and the fluid temperature regulator 6 .

In step S66, the control unit 30 determines whether the temperature Tsp of the rotating jig 7 has reached the second predetermined temperature T2. The second predetermined temperature T2 indicates a temperature above the temperature indicated by the third threshold TH3.

If it is determined as negative (No) in step S66, the process returns to step S65.

On the other hand, if it is determined as affirmative (Yes) in step S66, the process proceeds to step S67.

After the determination in step S61 is affirmative, in step S62, the fluid nozzle 29 supplies the fluid FL having the fourth flow rate FW4 and/or the second temperature Tsc to the rotating jig 7 to heat the rotating jig 7, and the control unit 30 controls the fluid supply regulator 4 and the fluid temperature regulator 6. The fourth flow rate FW4 is more than the third flow rate FW3. In addition, the second temperature Tsc is higher than the first temperature Tft.

In step S63, the control unit 30 determines whether the temperature Tsp of the rotating jig 7 has reached the second predetermined temperature T2.

If it is determined as negative (No) in step S63, the process returns to step S62.

On the other hand, if the determination in step S63 is affirmative (Yes), the processing proceeds to step S67.

After the determination in step S63 or step S66 is affirmative, in step S67, the control unit 30 controls the fluid supply regulator 4 in such a manner as to stop the fluid supply from the fluid nozzle 29 to the rotating jig 7. By completing step S67, the fluid control according to the temperature Tsp of the rotating clamp 7 is completed. Then, the processing returns to the subroutine of FIG. 4, and then returns to the main routine of FIG. 3, and proceeds to step S3.

As described above, as described with reference to FIG. 8, according to the first embodiment, when it is determined that the temperature Tsp of the rotating jig 7 is not lower than the fourth threshold TH4 (No in step S61) and when it is lower than the third threshold TH3 (step S64 Medium is Yes), the fluid FL having the third flow rate FW3 and the first temperature Tft is supplied to the rotating jig 7, and the rotating jig 7 is heated until the temperature Tsp of the rotating jig 7 becomes the second predetermined temperature T2. Therefore, similar to the fluid control of the third example described with reference to FIG. 7, when one substrate W is continuously processed at a time, the temperature Tsp of the rotating jig 7 during processing by the processing liquid can be maintained. For a certain temperature TcB.

Furthermore, according to the first embodiment, when it is determined that the temperature Tsp of the rotating jig 7 is lower than the fourth threshold TH4 (Yes in step S61), the rotating jig 7 is supplied with the fluid FL having the fourth flow rate FW4 and/or the second temperature Tsc , The rotating jig 7 is heated until the temperature Tsp of the rotating jig 7 becomes the second predetermined temperature T2. Therefore, even when the temperature Tsp of the rotating jig 7 is low, by supplying the rotating jig 7 with the fluid FL of the fourth flow rate FW4 which is more than the third flow rate FW3, the rotating jig 7 is supplied with a temperature Tft higher than the first temperature Tft. The fluid FL of the high second temperature Tsc can suppress the time until the temperature Tsp of the rotating jig 7 becomes the second predetermined temperature T2 from becoming longer. For example, when processing the first substrate W, the rotating jig 7 is supplied with the fluid FL having the fourth flow rate FW4 and/or the second temperature Tsc.

(Embodiment 2)

Next, referring to FIGS. 1 and 9, a substrate processing apparatus 100 and a substrate processing method according to Embodiment 2 of the present invention will be described. The main difference between the second embodiment and the first embodiment is that the second embodiment executes the temperature adjustment process of the rotating jig in parallel with other processes. The following mainly describes the differences between the second embodiment and the first embodiment.

Fig. 9 is a flowchart showing the substrate processing method of the second embodiment. As shown in FIG. 9, the substrate processing method includes steps S71 to S76. The substrate processing method is executed by the substrate processing apparatus 100 for each substrate W.

The processing of step S71, step S72, step S73, step S74, step S75, and step S76 shown in FIG. 9 are respectively the same as those of step S1, step S3, step S4, step S2, step S5, and step S6 shown in FIG. 3 The processing is the same, and the description is omitted appropriately.

As shown in FIGS. 1 and 9, in step S71, the rotating jig 7 holds the substrate W.

Next, in step S72, the nozzle 11 discharges the processing liquid onto the surface Wa of the substrate W, and the substrate W is processed by the processing liquid.

Then, step S73 and step S74 are executed in parallel.

That is, in step S73, the nozzle 15 discharges the cleaning liquid to the surface Wa of the substrate W to clean the substrate W.

On the other hand, in step S74, the control unit 30 controls the fluid supply adjusting unit 4 in such a manner that the fluid nozzle 29 supplies the fluid FL to the rotating jig 7. As a result, the fluid nozzle 29 supplies the fluid FL to the rotating jig 7 to adjust the temperature of the rotating jig 7. The processing of step S74 is the same as the processing of step S2 in FIG. 3.

Next, in step S75, the rotating jig 7 is rotated to dry the substrate W.

Next, in step S76, the transfer robot system takes out the substrate W from the rotating jig 7.

As described above with reference to FIG. 9, according to the second embodiment, step S74 (temperature adjustment step) is executed in parallel with step S73. Therefore, it is possible to complete the substrate processing method of the second embodiment in the same time as the general substrate processing method without performing step S74 while suppressing changes in the processing rate among the plurality of substrates W. In addition, step S74 (temperature adjustment step) may be executed in parallel with any of step S71, step S75, and step S76. That is, step S74 may be executed in parallel with a step different from step S72 (processing step).

In addition, step S74 (temperature adjustment step) may be executed in parallel with step S72 (processing step). In particular, when step S74 and step S72 are executed in parallel, for example, step S74 and the pre-allocation processing in step S72 are executed in parallel. The pre-distribution process is a process of discharging the treatment liquid to the liquid receiving part like a standby tank before discharging the treatment liquid to the substrate W.

(Embodiment 3)

Next, referring to FIG. 1, FIG. 9 and FIG. 10, a substrate processing apparatus 100 and a substrate processing method according to Embodiment 3 of the present invention will be described. The main difference between the third embodiment and the second embodiment is that in the third embodiment, the fluid FL is supplied to the rotating jig 7 and the fluid FL is also supplied to the back surface Wb of the substrate W. The following mainly describes the differences between the third embodiment and the second embodiment.

As shown in FIGS. 1 and 9, in step S74 (temperature adjustment step) of the third embodiment, in parallel with the supply of fluid FL to the rotating jig 7, the back surface Wa and the back surface Wb of the substrate W are supplied with and The fluid FL is the same fluid FL. Therefore, according to the third embodiment, when the fluid FL is the same liquid as the cleaning liquid (rinsing liquid or cleaning chemical liquid), for example, the temperature adjustment of the rotating jig 7 and the cleaning of the back surface Wb of the substrate W can be performed at the same time. . In addition, in parallel with the supply of the fluid FL to the rotating jig 7, a fluid different from the fluid FL may be supplied to the back surface Wb of the substrate W.

Next, referring to Fig. 10, the fluid nozzle 29A of the third embodiment will be described. Fig. 10 is a side view showing the fluid nozzle 29A. As shown in Figs. 1 and 10, the substrate processing apparatus 100 of Embodiment 3 replaces the fluid nozzle 29 of Fig. 1 and includes the fluid nozzle 29A of Fig. 10.

As shown in FIG. 10, the fluid nozzle 29A is arranged with respect to the substrate W at a predetermined interval in the extending direction of the rotation axis AX1. The fluid nozzle 29A faces the back surface Wb of the substrate W. The fluid nozzle 29A is stationary regardless of the rotation of the rotating base 71 and the shaft 91.

The first discharge port 290 of the fluid nozzle 29A opens toward the outer side in the radial direction of the rotation base 71. Therefore, the fluid nozzle 29A discharges the fluid FL from the first discharge port 290 and supplies the fluid FL to the surface 71 b of the rotation base 71. Specifically, the fluid nozzle 29A discharges the fluid FL from the first discharge port 290 and directly supplies the fluid FL to the surface 71 b of the rotation base 71.

On the other hand, the second discharge port 291 of the fluid nozzle 29A opens upward. In addition, the fluid nozzle 29A discharges the fluid FL from the second discharge port 291 toward the back surface Wb of the substrate W.

Next, referring to Fig. 10, the supply of fluid to the fluid nozzle 29A will be described. As shown in FIG. 10, the substrate processing apparatus 100 further includes a hollow supply pipe 60, a first pipe 61, and a second pipe 62. The supply pipe 60 is connected to the fluid nozzle 29A through the internal space 91a of the shaft 91 of the rotating motor 9 and the through hole 71a of the rotating base 71. The first pipe 61 is connected to the first discharge port 290 of the fluid nozzle 29A through the internal space 60a of the supply pipe 60. Then, the first pipe 61 is connected to the supply pipe P7. As a result, the fluid FL is supplied to the first discharge port 290 of the fluid nozzle 29A through the supply pipe P7 and the first pipe 61. The second pipe 62 is connected to the second discharge port 291 of the fluid nozzle 29A through the internal space 60a of the supply pipe 60. Then, the second pipe 62 is connected to the supply pipe P7. As a result, the fluid FL is supplied to the second discharge port 291 of the fluid nozzle 29A through the supply pipe P7 and the second pipe 62.

Furthermore, the fluid nozzle 29A may discharge a fluid different from the fluid FL from the second discharge port 291. At this time, the supply pipe P7 is not connected to the second pipe 62, but other supply pipes are connected. In addition, the substrate processing apparatus 100 of the first embodiment may replace the fluid nozzle 29 and include a fluid nozzle 29A.

(Embodiment 4)

11 and 12, a substrate processing apparatus 100A according to Embodiment 4 of the present invention will be described. The main difference between the fourth embodiment and the first embodiment is that the substrate processing apparatus 100A of the fourth embodiment includes three nozzles (nozzle 11, nozzle 15 and nozzle 17) and a fluid supply unit 21. The following mainly describes the differences between the fourth embodiment and the first embodiment.

FIG. 11 is a diagram showing a substrate processing apparatus 100A. As shown in FIG. 11, in addition to the structure of the substrate processing apparatus 100 of Embodiment 1, the substrate processing apparatus 100A further includes a valve V3, a supply pipe P3, a valve V4, a supply pipe P4, a valve V5, a supply pipe P5, Valve V6, and supply pipe P6. In addition, the processing unit 1A of the substrate processing apparatus 100A further includes a nozzle 17, a nozzle moving unit 19, a fluid supply unit 21, and a unit moving unit 26 in addition to the configuration of the processing unit 1 of the embodiment.

The nozzle 17 discharges SC1 toward the substrate W. The supply pipe P3 supplies SC1 to the nozzle 17. The valve V3 switches the start and stop of the supply of SC1 to the nozzle 17.

The nozzle moving part 19 rotates around the axis of rotation AX3, and moves the nozzle 17 horizontally between the processing position and the standby position of the nozzle 17. The processing position indicates the position above the substrate W. The standby position indicates a position outside the rotating jig 7 and the guide 25.

The fluid supply unit 21 is located above the rotating jig 7. The fluid supply unit 21 discharges nitrogen gas (N ₂ ) toward the substrate W from the discharge port 22 a. Specifically, the discharge port 22 a is connected to the supply path 22. The supply path 22 is connected to the supply pipe P4. Then, the nitrogen gas is supplied to the discharge port 22a from the supply pipe P4 and the supply path 22, and is discharged from the discharge port 22a. The valve V4 switches the start and stop of the supply of nitrogen to the supply path 22.

The fluid supply unit 21 discharges the rinse liquid toward the substrate W from the discharge port 23a. Specifically, the discharge port 23 a is connected to the supply path 23. Furthermore, the supply path 23 is connected to the supply pipe P5. Then, the rinse liquid is supplied to the discharge port 23a from the supply pipe P5 and the supply path 23, and is discharged from the discharge port 23a. The valve V5 switches the start and stop of the supply of the flushing liquid to the supply path 23.

The fluid supply unit 21 discharges IPA to the substrate W from the discharge port 24a. Specifically, the discharge port 24 a is connected to the supply path 24. Furthermore, the supply path 24 is connected to the supply pipe P4. Then, the IPA system is supplied to the discharge port 24a from the supply pipe P6 and the supply path 24, and is discharged from the discharge port 24a. The valve V6 switches the start and stop of the supply of IPA to the supply path 24.

The unit moving part 26 raises or lowers the fluid supply unit 21 in the vertical direction. When the fluid supply unit 21 discharges nitrogen gas, rinse liquid, and IPA to the substrate W, the unit moving part 26 lowers the fluid supply unit 21.

Furthermore, in the fourth embodiment, the nozzle 11 discharges the phosphoric acid liquid as the processing liquid to the substrate W.

Next, referring to Figs. 11 and 12, the substrate processing method of the fourth embodiment will be described. Fig. 12 is a flowchart showing a substrate processing method. As shown in FIG. 12, the substrate processing method includes step S101 to step S111. The substrate processing method is performed by the substrate processing apparatus 100A for each substrate W.

As shown in FIGS. 11 and 12, in step S101, the rotating jig 7 holds the substrate W.

In step S102, the nozzle 15 discharges a rinse liquid to the surface Wa of the substrate W to clean the substrate W.

In step S103, the control unit 30 controls the fluid supply adjustment unit 4 in such a manner that the fluid nozzle 29 supplies the fluid FL to the rotating jig 7. As a result, the fluid nozzle 29 supplies the fluid FL to the rotating jig 7 to adjust the temperature of the rotating jig 7. Step S103 is equivalent to an example of the "temperature adjustment step". Step S103 is the same as step S2 in FIG. 3.

In step S104, the nozzle 11 discharges the phosphoric acid solution to the surface Wa of the substrate W to process the substrate W. Step S104 is equivalent to an example of the "processing step".

In step S105, the rotating jig 7 spins the phosphoric acid solution from the substrate W by rotating.

In step S106, the nozzle 15 discharges a rinse liquid to the surface Wa of the substrate W to clean the substrate W.

In step S107, the nozzle 17 discharges SC1 to the surface Wa of the substrate W to clean the substrate W.

In step S108, the fluid supply unit 21 discharges the rinse liquid to the surface Wa of the substrate W from the discharge port 23a to clean the substrate W.

In step S109, the fluid supply unit 21 discharges IPA to the surface Wa of the substrate W from the discharge port 24a, and the substrate W is dried. Alternatively, the fluid supply unit 21 discharges nitrogen gas to the surface Wa of the substrate W from the discharge port 22a.

In step S110, the rotating jig 7 is rotated to dry the substrate W.

In step S111, the transfer robot system takes out the substrate W from the rotating jig 7.

As described above with reference to FIG. 12, according to the fourth embodiment, the processing of step S103 (temperature adjustment step) is the same as the processing of step S2 (temperature adjustment step) of the first embodiment. Therefore, in the fourth embodiment, as in the first embodiment, it is possible to suppress a change in the processing rate among the plurality of substrates W.

Furthermore, each of step S102, step S106, step S107, and step S108 corresponds to an example of the "washing step". In addition, each of step S109 and step S110 corresponds to an example of the "drying step".

In addition, step S103 can also be before step S101, between step S101 and step S102, between step S104 and step S105, between step S105 and step S106, between step S106 and step S107, in step S107 Execute between step S108, between step S108 and step S109, between step S109 and step S110, between step S110 and step S111, or after step S111. In addition, the substrate processing apparatus 100A may be provided with a fluid nozzle 29A instead of the fluid nozzle 29 (FIG. 10 ).

(Embodiment 5)

11 and FIG. 13, a substrate processing apparatus 100A according to Embodiment 5 of the present invention will be described. The main difference between the fifth embodiment and the fourth embodiment is that the substrate processing apparatus 100A of the fifth embodiment executes the temperature adjustment process of the rotating chuck in parallel with other processes. The following mainly describes the differences between the fifth embodiment and the fourth embodiment.

Fig. 13 is a flowchart showing a substrate processing method of the fifth embodiment. As shown in FIG. 13, the substrate processing method includes step S101 to step S111. The substrate processing method is performed by the substrate processing apparatus 100A for each substrate W. Steps S101 to S111 in FIG. 13 are respectively the same as steps S101 to S111 described with reference to FIG. 12.

Among them, in the fifth embodiment, step S103 (temperature adjustment step) is executed in parallel with step S102. Therefore, it is possible to complete the substrate processing method of Embodiment 5 in the same time as the general substrate processing method in which step S103 is not performed while suppressing changes in the processing rate among the plurality of substrates W. In addition, step S103 (temperature adjustment step) may be performed in parallel with any one of step S101 and step S104 to step S111. This point is the same as the second embodiment.

Next, although the present invention will be specifically explained based on examples, the present invention is not limited to the following examples.

[Example]

In the embodiment of the present invention, the substrate processing apparatus 100A described with reference to FIG. 11 executes the substrate processing method described with reference to FIG. 13. That is, the etching process is performed on the semiconductor wafer as the substrate W using phosphoric acid solution. Then, determine the etching rate of the silicon nitride film on the semiconductor wafer.

In particular, step S103 in FIG. 13 is executed under the following conditions. That is, the flow rate of the fluid FL discharged from the fluid nozzle 29 is 800 (ml/min). The rotation number of the rotation base 71 is 10 (rpm). The discharge time of fluid FL is 30 seconds. The fluid FL is deionized water. The temperature of the fluid FL is room temperature. Therefore, in step S103 of FIG. 13, the rotating jig 7 is cooled by the fluid FL.

The etching rate of the substrate processing apparatus 100A of the comparative example is compared with the etching rate of the substrate processing apparatus of the comparative example. The substrate processing apparatus of the comparative example did not perform step S103 in FIG. 13. The conditions of the substrate processing apparatus of the comparative example are the same as the conditions of the substrate processing apparatus 100A of the embodiment except that step S103 is not performed.

FIG. 14 is a graph showing the etching rate performed by the substrate processing apparatus 100A of the embodiment and the comparative example. In FIG. 14, the horizontal axis represents the sequence number of the substrate W. In other words, the horizontal axis indicates the number of substrates W to be processed when one substrate W is processed at a time. The vertical axis represents the etching rate.

As shown in FIG. 14, the etching rate of the substrate processing apparatus of the comparative example is shown by a square mark 200. The etching rate of the substrate processing apparatus of the comparative example gradually increases every time one substrate W is processed.

On the other hand, the etching rate of the substrate processing apparatus 100A of the embodiment is shown by the diamond mark 201. The etching rate of the substrate processing apparatus 100A of the embodiment is slightly constant among the plurality of substrates W. Therefore, it can be confirmed that if the rotating jig 7 is cooled by the fluid FL, the influence of the heat radiation of the processing liquid can be reduced, and the change of the etching rate can be suppressed.

Furthermore, the etching rate of the substrate processing apparatus of the comparative example reached saturation during the processing of the sixth substrate W. The saturation of the etching rate can be presumed to indicate that the temperature Tsp of the rotating jig 7 reaches saturation.

The embodiments of the present invention have been described above with reference to the drawings. However, the present invention is not limited to the above-mentioned embodiments, and can be implemented in various aspects (for example, (1) and (2) shown below) without departing from the scope of the gist. In addition, the above-mentioned embodiments can also be implemented by The plural constituent elements disclosed in the form are appropriately combined to form various inventions. For example, several constituent elements may be deleted from all constituent elements shown in the embodiment. Furthermore, constituent elements of different embodiments may be appropriately combined The diagrams are for easy understanding, and mainly represent each component in a schematic manner. The thickness, length, number, interval, etc. of each component shown in the diagram are different from the actual situation due to the relationship between the diagrams. The materials, shapes, dimensions, etc. of the constituent elements shown in the above-mentioned embodiments are merely examples, and are not particularly limited, and various changes can be made within a range that does not substantially deviate from the effects of the present invention.

(1) In Embodiments 1 to 5, as shown in FIGS. 1 and 11, the fluid nozzle 29 and the fluid nozzle 29A are arranged on the rotation axis AX1 of the rotary motor 9. However, before the fluid FL can be supplied to the rotating jig 7, the position of the nozzle for supplying the fluid FL to the rotating jig 7 is not particularly limited. For example, the nozzle may be arranged outside the rotating jig 7 in the radial direction, and the fluid FL may be supplied to the rotating jig 7.

(2) In Embodiment 1 to Embodiment 5, the temperature adjustment step (step S2, step S74, and step S103) is performed for each substrate W. However, under the premise that the change of the temperature Tsp of the rotating fixture 7 does not cause the change of the processing rate, the temperature adjustment step can also be performed according to the predetermined number of sheets NM of the substrate W. The predetermined number of slices NM represents an integer of 2 or more slices.

(Industrial availability)

The present invention relates to a substrate processing method and a substrate processing apparatus, and has industrial applicability.

Claims (24)

A substrate processing method includes: a temperature adjustment step of directly supplying a fluid to a substrate holding portion that rotates while holding a substrate to adjust the temperature of the substrate holding portion; and a processing step of processing the substrate with a processing liquid . The substrate processing method of claim 1, wherein the substrate holding portion includes: a rotating base that rotates; and a plurality of jig members provided on the rotating base to hold the substrate; in the temperature adjustment step, The fluid is supplied to the rotating base, and the temperature of the rotating base is adjusted. The substrate processing method of claim 1 or 2, wherein the temperature adjustment step is performed as a separate step in a time zone different from the processing step. The substrate processing method of claim 1 or 2, wherein the temperature adjustment step is performed in parallel with a step different from the above processing step or with the above processing step. The substrate processing method of claim 1 or 2, further comprising: a washing step of washing the substrate; and a drying step of drying the substrate; the number of rotations of the substrate holding portion in the temperature adjustment step is It is lower than the number of rotations of the substrate holding portion in the cleaning step, the drying step, or the processing step. The substrate processing method of claim 1 or 2, wherein the temperature adjustment step is performed as a step preceding the processing step. The substrate processing method of claim 1 or 2, wherein, in the temperature adjustment step, in parallel with the supply of the fluid to the substrate holding portion, the substrate is applied to the surface of the substrate. The back side in the back side supplies the same fluid or a different fluid from the above-mentioned fluid. The substrate processing method of claim 1 or 2, wherein the temperature adjustment step includes: a step of measuring the temperature of the substrate holding portion; and, based on the temperature of the substrate holding portion, the fluid supplied to the substrate holding portion Steps to control. The substrate processing method of claim 8, wherein the step of controlling the fluid includes a step of determining whether the temperature of the substrate holding portion is higher than a first threshold; and the temperature of the substrate holding portion is determined to be higher than In the case of the first threshold, the fluid is supplied to the substrate holding portion, and the substrate holding portion is cooled until the temperature of the substrate holding portion reaches the first predetermined temperature; the first predetermined temperature indicates the value of the first threshold The temperature below the indicated temperature. The substrate processing method of claim 8, wherein the step of controlling the fluid includes: determining whether the temperature of the substrate holding portion is higher than a first threshold; and determining whether the temperature of the substrate holding portion is higher than the second threshold The step of threshold value; the temperature indicated by the second threshold value is higher than the temperature indicated by the first threshold value; the step of controlling the fluid further includes: after determining that the temperature of the substrate holding portion is not higher than the above-mentioned temperature When the second threshold value is higher than the first threshold value, the step of supplying the fluid with the first flow rate to the substrate holding portion, and cooling the substrate holding portion until the temperature of the substrate holding portion becomes the first predetermined temperature; and When it is determined that the temperature of the substrate holding portion is higher than the second threshold value, the fluid having a second flow rate is supplied to the substrate holding portion, and the substrate holding portion is cooled until the temperature of the substrate holding portion becomes the first predetermined temperature The above steps; the second flow rate is more than the first flow rate; the first predetermined temperature indicates a temperature below the temperature indicated by the first threshold. The substrate processing method of claim 8, wherein the step of controlling the fluid includes: determining whether the temperature of the substrate holding portion is lower than a third threshold; and determining whether the temperature of the substrate holding portion is lower than the first threshold When the threshold value is 3, the fluid is supplied to the substrate holding portion, and the substrate holding portion is heated until the temperature of the substrate holding portion reaches the second predetermined temperature; the second predetermined temperature represents the value indicated by the third threshold The temperature above the temperature. The substrate processing method of claim 8, wherein the step of controlling the fluid includes: determining whether the temperature of the substrate holding portion is higher than a third threshold; and determining whether the temperature of the substrate holding portion is higher than the fourth threshold The step of threshold; the temperature indicated by the fourth threshold is lower than the temperature indicated by the third threshold; the step of controlling the fluid further includes: determining that the temperature of the substrate holding portion is not lower than the first When the threshold value is 4 and is lower than the third threshold value, the fluid having the third flow rate and the first temperature is supplied to the substrate holding portion, and the substrate holding portion is heated until the temperature of the substrate holding portion reaches the second predetermined temperature Steps; and When it is determined that the temperature of the substrate holding portion is lower than the fourth threshold value, the fluid having the fourth flow rate and/or the second temperature is supplied to the substrate holding portion, and the substrate holding portion is heated to the temperature of the substrate holding portion Steps up to the second predetermined temperature; the fourth flow rate is more than the third flow rate; the second temperature is higher than the first temperature; the second predetermined temperature is the temperature indicated by the third threshold Above the temperature. The substrate processing method of claim 11, wherein the second predetermined temperature indicates a saturation temperature when the temperature of the substrate holding portion is saturated. The substrate processing method of claim 8, wherein in the step of measuring the temperature of the substrate holding portion, a thermocouple, a radiation thermometer, or an infrared thermal imager is used to measure the temperature of the substrate holding portion. The substrate processing method according to claim 1 or 2, wherein in the temperature adjustment step, the fluid is supplied to the substrate holding portion, and the substrate holding portion is cooled. The substrate processing method according to claim 1 or 2, wherein in the temperature adjustment step, the fluid is supplied to the substrate holding portion, and the substrate holding portion is heated. The substrate processing method of claim 1 or 2, wherein the flow system includes an inert gas, deionized water, or carbonated water. According to the substrate processing method of claim 1 or 2, wherein the processing liquid system includes phosphoric acid solution or sulfuric acid hydrogen peroxide water mixed solution. A substrate processing method includes: a temperature adjustment step of supplying a fluid to a substrate holding part that rotates while holding a substrate, cooling or heating the substrate holding part so that the temperature of the substrate holding part becomes a predetermined temperature; The step of processing the above-mentioned substrate. A substrate processing method includes: a temperature adjustment step of supplying a fluid to a substrate holding portion that rotates while holding a substrate to adjust the temperature of the substrate holding portion; and a processing step of processing the substrate with a processing liquid; The temperature adjustment step includes: a step of measuring the temperature of the substrate holding portion; and a step of controlling the fluid supplied to the substrate holding portion based on the temperature of the substrate holding portion; and the step of controlling the fluid includes There are: a step of determining whether the temperature of the substrate holding portion is higher than a first threshold; and a step of determining whether the temperature of the substrate holding portion is higher than a second threshold; the temperature indicated by the second threshold is higher than the first threshold The temperature indicated by the threshold; the step of controlling the fluid further includes: when it is determined that the temperature of the substrate holding portion is not higher than the second threshold and higher than the first threshold, setting the first flow rate to the The step of supplying fluid to the substrate holding portion and cooling the substrate holding portion until the temperature of the substrate holding portion becomes the first predetermined temperature; and when it is determined that the temperature of the substrate holding portion is higher than the second threshold value, a step The step of supplying the fluid at a flow rate to the substrate holding portion and cooling the substrate holding portion until the temperature of the substrate holding portion becomes the first predetermined temperature; the second flow rate is greater than the first flow rate; the first The predetermined temperature indicates the temperature below the temperature indicated by the above-mentioned first threshold. A substrate processing method including: A temperature adjustment step of supplying a fluid to a substrate holding portion that rotates while holding a substrate to adjust the temperature of the substrate holding portion; and a processing step of processing the substrate with a processing liquid; the temperature adjustment step includes: measuring The step of controlling the temperature of the substrate holding portion; and the step of controlling the fluid supplied to the substrate holding portion based on the temperature of the substrate holding portion; the step of controlling the fluid includes: determining the temperature of the substrate holding portion And when it is determined whether the temperature of the substrate holding portion is lower than the third threshold value, the fluid is supplied to the substrate holding portion, and the substrate holding portion is heated until the temperature of the substrate holding portion becomes the first 2 Steps up to the predetermined temperature; the second predetermined temperature is a temperature above the temperature indicated by the third threshold. A substrate processing method includes: a temperature adjustment step of supplying a fluid to a substrate holding portion that rotates while holding a substrate to adjust the temperature of the substrate holding portion; and a processing step of processing the substrate with a processing liquid; The temperature adjustment step includes: a step of measuring the temperature of the substrate holding portion; and a step of controlling the fluid supplied to the substrate holding portion based on the temperature of the substrate holding portion; and the step of controlling the fluid includes There is: a step of determining whether the temperature of the substrate holding portion is higher than a third threshold; and The step of determining whether the temperature of the substrate holding portion is higher than a fourth threshold; the temperature indicated by the fourth threshold is lower than the temperature indicated by the third threshold; the step of controlling the fluid further includes: When it is determined that the temperature of the substrate holding portion is not lower than the fourth threshold value and lower than the third threshold value, the fluid having the third flow rate and the first temperature is supplied to the substrate holding portion, and the substrate holding portion is heated until the Steps until the temperature of the substrate holding portion becomes the second predetermined temperature; and when it is determined that the temperature of the substrate holding portion is lower than the fourth threshold value, the fluid having the fourth flow rate and/or the second temperature is supplied to the substrate holding The step of heating the substrate holding portion until the temperature of the substrate holding portion reaches the second predetermined temperature; the fourth flow rate is greater than the third flow rate; the second temperature is higher than the first temperature; The second predetermined temperature indicates a temperature above the temperature indicated by the third threshold. A substrate processing method includes: a temperature adjustment step of supplying a fluid to a substrate holding portion that rotates while holding a substrate to adjust the temperature of the substrate holding portion; and a processing step of processing the substrate with a processing liquid; The temperature adjustment step includes: measuring the temperature of the substrate holding portion; and controlling the fluid supplied to the substrate holding portion based on the temperature of the substrate holding portion; and measuring the temperature of the substrate holding portion In the above steps, a thermocouple, radiation thermometer, or infrared thermal imager is used to measure the temperature of the substrate holding portion. A substrate processing apparatus that processes substrates with a processing liquid, and includes: a substrate holding portion that holds the substrate for rotation; and a temperature adjustment mechanism that directly supplies fluid to the substrate holding portion to adjust the substrate holding portion的温度。 The temperature.

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