KR101634452B1 - Chuck structure for testing a wafer using probe card - Google Patents

Chuck structure for testing a wafer using probe card Download PDF

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Publication number
KR101634452B1
KR101634452B1 KR1020140144626A KR20140144626A KR101634452B1 KR 101634452 B1 KR101634452 B1 KR 101634452B1 KR 1020140144626 A KR1020140144626 A KR 1020140144626A KR 20140144626 A KR20140144626 A KR 20140144626A KR 101634452 B1 KR101634452 B1 KR 101634452B1
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KR
South Korea
Prior art keywords
fluid
chuck
inlet
wafer
flow paths
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KR1020140144626A
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Korean (ko)
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KR20160049069A (en
Inventor
정상훈
이용환
전동제
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세메스 주식회사
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Priority to KR1020140144626A priority Critical patent/KR101634452B1/en
Publication of KR20160049069A publication Critical patent/KR20160049069A/en
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Abstract

A chuck structure for wafer inspection using a probe card includes a chuck plate and a plurality of flow paths. The chuck plate has a wafer on which an inspection process by the probe card proceeds. The channels are embedded in the chuck plate so as to correspond to each of the regions with the chuck plate divided into a plurality of regions, and fluids are separately supplied to heat or cool the wafer.

Description

CHUCK STRUCTURE FOR TESTING A WAFER USING PROBE CARD

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chuck structure for inspecting a wafer using a probe card, and more particularly, to a chuck structure used for checking the electrical performance of semiconductor devices formed on a wafer using a probe card.

Generally, semiconductor devices include a deposition process for forming a film on a wafer, an etching process for forming patterns having electrical characteristics from the film, an ion implantation process or diffusion process for implanting or diffusing impurities into the patterns, And a cleaning and rinsing process for removing impurities from the substrate on which they are formed.

After the semiconductor elements are formed by performing the above-described processes, an inspection process for inspecting the electrical performance of the semiconductor devices is performed. The inspection process proceeds by placing a wafer on which the semiconductor devices are formed on a chuck, and then bringing a probe card having a plurality of probes connected to the test device into contact with the semiconductor elements of the wafer placed on the chuck.

At this time, in the inspection step, the wafer is heated to a high temperature of about 90 ° C or higher, or cooled to a low temperature of about -40 ° C or lower, and its electrical performance is inspected. To this end, the chuck is provided with a flow path for supplying a fluid such as a heating medium or a cooling medium for the high temperature or low temperature inspection.

However, since the flow path is formed in a single shape having one inlet and one outlet on the chuck, a temperature deviation due to the position of the wafer is seriously problematic due to an excessive temperature change generated during the flow of the fluid.

Korean Patent Laid-Open Publication No. 10-2013-0062876 (published on June 23, 2013, inspection apparatus for semiconductor devices and a chuck stage using the same) Korean Patent Laid-Open No. 10-2005-0001819 (Published Date: Jan. 17, 2005, Probe chuck cooling system and method)

SUMMARY OF THE INVENTION It is an object of the present invention to provide a chuck structure capable of reducing a temperature deviation according to a position of a wafer where an inspection process by a probe card proceeds.

According to an aspect of the present invention, a chuck structure for wafer inspection using a probe card includes a chuck plate and a plurality of flow paths.

The chuck plate has a wafer on which an inspection process by the probe card proceeds. The channels are embedded in the chuck plate so as to correspond to each of the regions with the chuck plate divided into a plurality of regions, and fluids are separately supplied to heat or cool the wafer.

The channels according to an embodiment may include a built-in first channel corresponding to a central region of the chuck plate and a second channel built in corresponding to an outer region separated from the central region of the chuck plate.

The chuck structure according to an exemplary embodiment may further include a heater installed at a position adjacent to an inlet of each of the flow paths to heat the fluid.

The chuck structure according to an embodiment may further include a chiller installed at a position adjacent to the inlet of each of the flow paths to cool the fluid. Accordingly, the heater may be positioned between the inlet of each of the flow paths and the chiller.

The chuck structure according to an embodiment may further include a flow rate control unit installed at a position adjacent to the inlet to control the flow rate of the fluid. The flow control unit may be configured to be positioned between the inlet of each of the flow paths and the heater.

Each of the flow paths according to one embodiment may have an inlet and an outlet at a lower portion of the chuck plate.

Each of the flow paths according to another embodiment may have an inlet and an outlet formed on the side of the chuck plate.

According to this chuck structure, a chuck plate on which a wafer to be inspected by the probe card is placed is divided into a plurality of regions, and a flow path for supplying a fluid for heating or cooling the wafer is provided in each of the regions The length of the supply of the fluid can be made relatively shorter than that of the case where the flow path is formed as one, thereby reducing the temperature change of the fluid.

Accordingly, the reliability of the high-temperature inspection process and the low-temperature inspection process for the wafer can be improved by heating or cooling the wafer relatively uniformly overall by the fluid.

FIG. 1 is a block diagram showing a schematic structure of a chuck structure used for inspecting a wafer using a probe card according to an embodiment of the present invention. Referring to FIG.
FIG. 2 is a view showing the flow paths embedded in the chuck plate of the chuck structure shown in FIG. 1 in detail.
FIG. 3 is a view for explaining a structure in which fluid is supplied to each of the flow paths shown in FIG. 2. FIG.
FIG. 4 is a view showing a temperature distribution when one single flow path is formed as in the background art.
FIG. 5 is a view showing a temperature distribution when the flow paths are formed according to the structure of FIG. 3 of the present invention.

Hereinafter, a chuck structure for wafer inspection using a probe card according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. The present invention is capable of various modifications and various forms, and specific embodiments are illustrated in the drawings and described in detail in the text. It should be understood, however, that the invention is not intended to be limited to the particular forms disclosed, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the invention. Like reference numerals are used for like elements in describing each drawing. In the accompanying drawings, the dimensions of the structures are enlarged to illustrate the present invention in order to clarify the present invention.

The terms first, second, etc. may be used to describe various components, but the components should not be limited by the terms. The terms are used only for the purpose of distinguishing one component from another. For example, without departing from the scope of the present invention, the first component may be referred to as a second component, and similarly, the second component may also be referred to as a first component.

The terminology used in this application is used only to describe a specific embodiment and is not intended to limit the invention. The singular expressions include plural expressions unless the context clearly dictates otherwise. In this application, the terms "comprises", "having", and the like are used to specify that a feature, a number, a step, an operation, an element, a part or a combination thereof is described in the specification, But do not preclude the presence or addition of one or more other features, integers, steps, operations, components, parts, or combinations thereof.

On the other hand, unless otherwise defined, all terms used herein, including technical or scientific terms, have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. Terms such as those defined in commonly used dictionaries are to be interpreted as having a meaning consistent with the contextual meaning of the related art and are to be interpreted as either ideal or overly formal in the sense of the present application Do not.

FIG. 1 is a schematic view of a chuck structure used for inspecting a wafer using a probe card according to an embodiment of the present invention. FIG. 2 is a cross- Fig.

Referring to FIGS. 1 and 2, a chuck structure 1000 according to an embodiment of the present invention includes a chuck plate 100 and a plurality of flow paths 200.

The wafer 20 on which the inspection process using the probe card 10 is performed is placed on the chuck plate 100. Here, the inspection process is a process for checking the electrical performance of a plurality of semiconductor devices (not shown) formed on the wafer 20, and a plurality of probes 12 formed on the probe card 10, Connected to each of the devices, and then proceeding by applying an electrical signal to each of the semiconductor devices. At this time, the probe card 10 may be electrically connected to a tester (not shown) for providing the electric signal. In addition, the probe card 10 may be installed so as to be interchangeable with the wafer 20 at an upper portion of the chuck plate 100.

The chuck plate 100 is formed with a plurality of vacuum holes 110 for vacuum-sucking the wafer 20 so that the wafer 20 is stably placed on the upper surface on which the wafer 20 is placed. The vacuum holes 110 extend to the side of the chuck plate 100 and are connected to at least one exposed vacuum line 120 to receive the vacuum pressure for vacuum adsorption. The chuck plate 100 may be disposed on a stage (not shown) connected to a horizontal driving unit (not shown) and a vertical driving unit (not shown) to move the wafer in the horizontal and vertical directions.

The flow paths 200 are embedded in the chuck plate 100. A fluid F for heating or cooling the wafer 20 is provided in the flow channels 200 so that the inspection process for the wafer 20 can be performed at a high temperature of about 90 ° C or higher or a low temperature of about -40 ° C or lower Is supplied. The fluid F may include gaseous dry air supplied to each of the flow paths 200 in a very fast manner so that the temperature of the fluid F may not vary depending on the position of each of the flow paths 200 have.

The flow channels 200 are embedded in the chuck plate 100 so as to correspond to the respective regions in a state where the chuck plate 100 is divided into a plurality of regions and have an inlet 210 and an outlet 220 separately. At this time, as the number of the flow paths 200 increases, the length of the supply of the fluid F becomes shorter, so that only the temperature of the fluid F supplied to each of the flow paths 200 is uniformly controlled The temperature deviation according to the position of the wafer 20 can be further reduced. However, when a large number of the flow paths 200 are formed, the number of devices for controlling the temperature of the fluid F supplied to the respective flow paths increases, complicating the overall structure of the chuck structure 1000 It is to be understood that the number of the flow paths 200 can be adjusted organically according to the size of the wafer 20 placed on the chuck plate 100 or the accuracy of the required temperature deviation.

2, the flow paths 200 may include a first flow path 300 built in corresponding to a central region CA of the chuck plate 100, And a second flow path 400 built in corresponding to the outer area EA which is different from the first flow path CA.

The first flow path 300 may be formed in a substantially concentric circle shape in the center area CA of the chuck plate 100. In order to uniformly heat or cool the wafer 20 placed on the chuck plate 100, the concentric first flow path 300 needs to be formed at regular intervals with respect to each other .

The first flow path 300 includes a first channel 300 and a second channel 300 extending from the center area CA toward the side so that the inlet 210 and the outlet 220 are exposed to the side of the chuck plate 100, And may have extensions 310 therein. In order to uniformly heat or cool the wafer 20 placed on the chuck plate 100, the first flow path 300 is formed on the same plane so that the gap between the wafer 20 and the wafer 20 is constant The first extending portions 310 and the second extending portions 310 may be formed at a portion facing the first extending portions 310 in a planar manner so as not to interfere with the first extending portions 310 extending to the side portions of the chuck plate 100, May be rolled so that the 180-degree direction is switched.

The second flow path 400 may be formed in a substantially concentric circle shape in an outer area EA of the chuck plate 100, like the first flow path 300. At this time, the concentric second flow path (400) needs to be formed at regular intervals with respect to each other in order to uniformly heat or cool the wafer (20).

The second flow path 400 is formed such that both ends of the inlet 210 and the outlet 220 are exposed to the side of the chuck plate 100 in the same manner as the first flow path 300, EA < / RTI > extending laterally. Since the second flow path 400 is formed on the same plane so that the interval between the second flow path 400 and the wafer 20 is constant along the position for heating or cooling the wafer 20, The second extending portions 410 may have a shape in which the portions facing each other in plan view are rolled. In this case, since the portion of the second flow path 400 facing the first extending portions 310 is also formed in a planar manner, the portion of the second flow path 400 is also rolled in order to prevent interference with the first extending portions 310 rolling form.

In addition, the first and second flow paths 300 and 400 may have the same length. The temperature difference of the fluid F supplied to each of the first and second flow paths 300 and 400 is substantially the same between the first flow path 300 and the second flow path 400, (20) can be more uniformly heated or cooled. The width of the center area CA formed with the first flow path 300 of the chuck plate 100 is wider than the width of the outer flow area EA formed with the second flow path 400 .

The first extending portions 310 and the second extending portions 410 of each of the first and second flow paths 300 and 400 may be formed at a lower portion of the chuck plate 100 It may have an elongated structure. In this case, since each of the first and second flow paths 300 and 400 is not interfered in a planar manner by the first and second extensions 310 and 410, there is a distinct advantage in that it can be formed as a uniform concentric circular shape, specifically, a spiral shape as a whole without rolling shape.

Since the channels 200 include a plurality of channels such as the first and second channels 300 and 400, the vacuum line 120 can be formed in various sizes so that the chuck plate 100 Even if the size of the wafer 20 placed on the wafer 20 is changed, it is sufficiently compatible with the wafer 20 and can be vacuum-adsorbed.

3, the structure for controlling the fluid F supplied to each of the first and second flow paths 300 and 400 will be described in further detail with reference to FIG.

FIG. 3 is a view for explaining a structure in which fluid is supplied to each of the flow paths shown in FIG. 2. FIG.

3, the chuck structure 1000 includes a chiller 500, a heater 600, and a flow rate controller 600 for controlling the fluid F supplied to the flow channels 200 built in the chuck plate 100. [ And may further include a control unit 700. At this time, the inlet 210 and the outlet 220 of the flow paths 200, for example, the first extended portions 310 and the second extended portions 410 of the first and second flow paths 300 and 400, May basically have a structure extending in the same direction from the chuck plate 100 so as to be controlled by the chiller 500, the heater 600, and the flow controller 700.

The chiller 500 is installed at a position adjacent to the inlet 210 of the flow paths 200. The chiller (500) cools the fluid (F) supplied to the flow paths (200). Specifically, it surrounds the portion 230 extending from the inlet 210 of the flow paths 200 and cools the fluid F supplied to the extended portion 230. The chiller 500 includes a refrigerant at about -90 캜 to cool the wafer 20 to a low temperature of about -40 캜 or lower. At this time, the chiller 500 encloses the extended portion 230 in the form of a coil to effectively cool the fluid F in the portion 230 extending from the inlet 210 of the flow paths 200 And may have a structure to cover long along the longitudinal direction.

The heater 600 is installed between the chiller 500 and the inlet 210 at a position adjacent to the flow paths 200 and the inlet 210. The heater (600) heats the fluid (F) supplied to the flow paths (200). The heater 600 is installed in a manner similar to the chiller 500 to extend from the inlet 210 of the flow paths 200 to the extended portion 230 Thereby heating the fluid (F).

The chuck structure 1000 further includes a temperature sensing unit 800 connected between the heater 600 and the inlet 210 to sense the temperature of the fluid F that has passed through the heater 600 can do. That is, the temperature sensing unit 800 may sense the final temperature of the fluid F that has passed through the chiller 500 and the heater 600.

The temperature sensing unit 800 is connected to the chiller 500 and the heater 600 to transfer the final temperature of the fluid F to the chiller 500 and the heater 600, The setting temperature for cooling or heating the heater 500 and the heater 600 can be set according to the temperature of the supplied fluid F desired by the user. At this time, the temperature of the fluid (F) can be controlled more precisely due to the process sequence in which the fluid (F) is cooled by the chiller (500) and then heated by the heater (600). Accordingly, even if the temperature sensing unit 800 is connected only to the heater 600, the temperature of the fluid F can be controlled stably and precisely.

Although the fluid F is provided to the inlet 210 of the flow paths 200 through the heater 600 through the chiller 500 in the present embodiment, And the position of the heater 600 are exchanged with each other, the temperature of the fluid F can be sufficiently controlled. In other words, the structure for controlling the temperature of the fluid F includes a first temperature control unit for cooling or heating the fluid F at a position adjacent to the inlet 210 of the flow paths 200, And a second temperature control unit installed between the control unit and the inlet 210 to heat or cool the fluid F to be opposite to the first temperature control unit.

The flow control unit 700 is installed between the heater 600 and the inlet 210 at a position adjacent to the inlet 210 of the flow paths 200. The flow controller 700 controls the flow rate of the fluid F supplied to the flow paths 200. In this case, the wafer 20 placed on the chuck plate 100 can control the temperature at which the fluid F is heated or cooled by the flow rate, more precisely.

The chuck structure 1000 may further include a valve 900 for controlling the supply of the fluid F to the chiller 500 at a rear end position of the chiller 500. Since the flow rate of the fluid F is controlled by the flow rate controller 700, the valve 900 can be used to control only whether the fluid F is supplied from the outside.

In this embodiment, the fluid F is cooled by the chiller 500 and then heated by the heater 600 to adjust the temperature. However, the chiller 500, And may be configured to be heated by the heater 600 and then cooled by the chiller 500.

The chuck plate 100 on which the wafer 20 is placed is divided into a plurality of areas such as a center area CA and an outer area EA A plurality of flow paths through which the fluid F for heating or cooling the wafer 20 are supplied are formed correspondingly to the respective regions, It is possible to reduce the temperature change of the fluid F by making it relatively shorter than the case.

This is because, as in the background art, the temperature distribution in a case where the flow paths are formed according to the structure shown in FIG. 4 and FIG. 3 which actually show the temperature distribution when one single flow path is formed 4, in which the flow paths 200 are formed by a single flow path without forming a plurality of the flow paths 200, the flow paths 200 are formed in the first and second flow paths 300 and 400 ), It was confirmed that the temperature distribution was more uniform. 4, the maximum temperature deviation is about 0.9 ° C in the case of FIG. 4, whereas the maximum temperature deviation is about 0.4 ° C, which is about 50% Respectively.

Therefore, the reliability of the high-temperature inspection process and the low-temperature inspection process for the wafer 20 can be improved by heating or cooling the wafer 20 relatively uniformly with the fluid F as a whole.

While the present invention has been described in connection with what is presently considered to be practical and exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.

10: probe card 12: probe
20: wafer 100: chuck plate
110: Vacuum hole 120: Vacuum line
200: flow paths 210: inlet
220: Outlet 300: First Euro
310: first extension part 400: second flow path
410: second extension part 500: chiller
600: heater 700: flow controller
800: Temperature sensing part 900: Valve
1000: chuck structure

Claims (10)

  1. A chuck plate on which a wafer on which an inspection process by the probe card proceeds is placed; And
    And a plurality of flow passages embedded in the chuck plate so as to correspond to the regions in a state where the chuck plate is divided into a plurality of regions and fluid is separately supplied to heat or cool the wafer,
    Wherein the channels include a first channel built in corresponding to a center region of the chuck plate and a second channel built in corresponding to an outer region separated from the center region of the chuck plate,
    Wherein the first channel and the second channel have the same length to reduce a temperature deviation between the center region and the outer region.
  2. delete
  3. The chuck structure according to claim 1, further comprising a heater installed at a position adjacent to an inlet of each of the flow paths to heat the fluid.
  4. The chuck structure of claim 1, further comprising a chiller installed at a location adjacent to an inlet of each of the flow paths to cool the fluid.
  5. The chuck structure according to any one of claims 3 and 4, further comprising a flow rate control unit installed at a position adjacent to the inlet to control the flow rate of the fluid.
  6. The method according to claim 1,
    A first temperature controller installed at a position adjacent to an inlet of each of the flow paths to cool or heat the fluid; And
    Further comprising a second temperature control unit disposed between the first temperature control unit and the inlet to heat or cool the fluid so as to be opposite to the first temperature control unit.
  7. The chuck structure according to claim 6, wherein the first temperature control part includes a chiller for cooling the fluid, and the second temperature control part includes a heater for heating the fluid.
  8. The chuck structure of claim 7, further comprising a flow rate controller for controlling a flow rate of the fluid between the inlet and the heater.
  9. The chuck structure according to claim 1, wherein each of the flow paths is formed with an inlet and an outlet at a side portion of the chuck plate.
  10. The chuck structure of claim 1, wherein each of the flow paths is formed with an inlet and an outlet at a lower portion of the chuck plate.
KR1020140144626A 2014-10-24 2014-10-24 Chuck structure for testing a wafer using probe card KR101634452B1 (en)

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Application Number Priority Date Filing Date Title
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KR101634452B1 true KR101634452B1 (en) 2016-06-29

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Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101323093B1 (en) 2010-10-28 2013-10-29 가부시키가이샤 히다치 고쿠사이 덴키 Substrate processing apparatus and method of manufacturing a semiconductor device

Family Cites Families (5)

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Publication number Priority date Publication date Assignee Title
KR100568029B1 (en) 2003-06-26 2006-04-05 동부아남반도체 주식회사 Cooling system and method of probe chuck in probe station
JP4551256B2 (en) * 2005-03-31 2010-09-22 東京エレクトロン株式会社 Mounting table temperature control device, mounting table temperature control method, processing device, and mounting table temperature control program
KR101227718B1 (en) * 2011-04-18 2013-01-29 세크론 주식회사 Probe station
JP5796870B2 (en) 2011-12-05 2015-10-21 株式会社日本マイクロニクス Semiconductor device inspection apparatus and chuck stage used therefor
KR20140044132A (en) * 2012-10-04 2014-04-14 세메스 주식회사 Spin head, substrate treating apparatus including the spin head and substrate treating method for using the apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101323093B1 (en) 2010-10-28 2013-10-29 가부시키가이샤 히다치 고쿠사이 덴키 Substrate processing apparatus and method of manufacturing a semiconductor device

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