TW201243069A - Coated article and method for making the same - Google Patents

Coated article and method for making the same Download PDF

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TW201243069A
TW201243069A TW100115410A TW100115410A TW201243069A TW 201243069 A TW201243069 A TW 201243069A TW 100115410 A TW100115410 A TW 100115410A TW 100115410 A TW100115410 A TW 100115410A TW 201243069 A TW201243069 A TW 201243069A
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Taiwan
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layer
amorphous
film layer
aluminum
thin film
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TW100115410A
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English (en)
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TWI503430B (zh
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Hsin-Pei Chang
Wen-Rong Chen
Huann-Wu Chiang
Cheng-Shi Chen
Nan Ma
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Hon Hai Prec Ind Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C23C14/0652—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3492—Variation of parameters during sputtering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Description

201243069 六、發明說明： 【發明所屬之技術領域】 [0001] 本發明涉及一種鍍膜件及其製造方法。 [先前技術3 ' [〇0〇2] 鋁或鋁合金目前被廣泛應用於航空、航天、汽車及微電 子等工業領域。但鋁或鋁合金的標準電極電位很低，对 腐蝕差，暴露於自然環境中會引起表面快速腐蝕。 [0003] 提高鋁或鋁合金耐腐蝕性的方法通常係在其表面形成保 0 護性的塗層。傳統的陽極氧化、電沉積、化學轉化膜技 術及電鍍等鋁或鋁合金的表面處理方法存在生產工藝旅 雜、效率低、環境污染嚴重等缺點》 [0004] 真空鍍膜（PVD)為一清潔的成膜技術。然而，由於鋩或 鋁合金的標準電極電位很低，且PVD塗層存在微小的孔隙 及由於晶格失配或塑性變形而形成的位錯缺陷，因此形 成於鋁或鋁合金表面的PVD塗層容易發生電化學腐#，導 致該PVD塗層的耐腐蝕性能降低，對鋁或鋁合金的耐腐# 能力的提T§J有限。 【發明内容】 [0005] 鑒於此，提供一種具有良好的耐腐蝕性的鍍膜件。 [0006] 另外，還提供一種上述鍍膜件的製造方法。 [0007] 一種鑛膜件，包括銘或紹合金基體及形成於該铭或銘合 金基體上的複合防護層，所述複合防護層包括複數第〆 非晶態薄膜層及複數第二非晶態薄膜層，所述複數第〆 非晶態薄膜層和複數第二非晶態薄膜層交替排布；所述 表單編號 AOioi S 3 頁/共 15 頁 1002025784-0 201243069 第一非晶態薄膜層為氮化鋁層或氧化鋁層，所述第二非 晶態薄膜層為氮化矽層或二氧化矽層。 [0008] 一種鍍膜件的製造方法，其包括如下步驟： [0009] 提供鋁或鋁合金基體； [0010] 藉由真空鍍膜的方式，於該鋁或鋁合金基體的表面形成 複合防護層，所述複合防護層包括複數第一非晶態薄膜 層及複數第二非晶態薄膜層，所述複數第一非晶態薄膜 層和複數第二非晶態薄膜層交替排布；所述第一非晶態 薄膜層為氮化鋁層或氧化鋁層，所述第二非晶態薄膜層 為氮化矽層或二氧化矽層。 [0011] 經上述方式形成的第一非晶態薄膜層及第二非晶態薄膜 層的膜層中不存在晶態薄膜的晶體缺陷而具有較高的緻 密性，因此，可提高鍍膜件的耐腐蝕性。進一步地，在 腐蝕性介質侵入所述鍍膜件的過程中，由於第一非晶態 薄膜層與第二非晶態薄膜層之間存在較為清晰的膜層界 面，增加了腐餘性介質橫向移動的趨勢，延長了腐餘性 介質的滲入路程，降低了腐蝕性介質的滲入速度，從而 減緩了發生腐蝕的速率，提高了所述鍍膜件的耐腐蝕性 。更重要的係，所述複合防護層中存在多個所述界面， 如此可大大提高所述鍍膜件的财腐#性。 【實施方式】 [0012] 請參閱圖1，本發明一較佳實施例的鍍膜件10包括鋁或鋁 合金基體11及形成於該鋁或鋁合金基體11上的複合防護 層13。該鍍膜件10可為3C電子產品的殼體，亦可為眼鏡 100115410 表單編號A0101 第4頁/共15頁 1002025784-0 201243069 [0013] Ο [0014] [0015]
[0016] [0017] 100115410 邊框、建築用件及汽車等交通工具的零部件等。 該複合防護層1 3包括複數第一非晶態薄膜層丨3丨和複數第 二非晶態薄膜層133，所述複數第一非晶態薄膜層131和 複數第二非晶態薄膜層133交替排布，該複合防護層13的 最外層以及與鋁或鋁合金基體丨丨直接結合的膜層可為第 非晶態薄膜層131，亦可為第二非晶態薄膜層133。所 述複合防護層13的總厚度為5〇〇〜ΐ〇〇〇ηη^所述第一非晶 I薄臈層131和第二非晶態薄膜層13 3的總層數為4〜1 〇層 〇 所述第一非晶態薄膜層131可為氮化鋁（A1N)層或氧化 銘（Al2〇3)層。S玄AIN或Al2〇3的第一非晶態薄膜層131 具有良好的緻密性。所述第一非晶態薄膜層131優選為 八11^層。 所述第二非晶態薄膜層133可為氮化矽（以/彳）層或二 氧化石夕（Si〇2)層。該Si3N4或Si〇2的第二非晶態薄膜層 133具有良好的緻密性。所述第二非晶態薄膜層133優選 為S i N層。 3 4 所述第一非晶態薄膜層131及第二非晶態薄膜層133均為 硬質薄膜層。 所述第一非晶態薄膜層131及第二非晶態薄膜層133均可 藉由真线膜的；ίτ式形成。所述真讀膜可為真空賤鑛 、真空蒸鍍等。 明同時參閱圖1與圖2,本發明一較佳實施例的製造所述 鍍膜件10的方法主要包括如下步驟： 表單編號Α0101 第5頁/共15頁 1002025784-0 [0018] 201243069 [0019] 提供鋁或鋁合金基體11，該鋁或鋁合金基體11可以藉由 沖壓成型得到。 [0020] 對該IS或紹合金基體11進行清潔前處理。該清潔前處理 包括：採用去離子水和無水乙醇依次對所述鋁或鋁合金 基體11的表面進行擦拭，然後將該鋁或鋁合金基體11置 於丙酮中進行超聲波清洗，以去除表面的油污。清洗後 將該鋁或鋁合金基體11乾燥備用。 [0021] 對經上述清潔前處理後的鋁或鋁合金基體11的表面進行 電衆清洗，以進一步去除铭或銘合金基體11表面的油污 ，以及改善鋁或鋁合金基體11表面與後續鍍層的結合力 。結合參閱圖2，提供一真空鍍膜機20，該真空鍍膜機20 包括一鍍膜室21及連接於鍍膜室21的一真空泵30，真空 泵30用以對鍍膜室21抽真空。該鍍膜室21内設有轉架（未 圖示）、相對設置的二鋁靶23及相對設置的二矽靶24。轉 架帶動鋁或鋁合金基體11沿圓形的執跡25公轉，且鋁或 鋁合金基體11在沿軌跡25公轉時亦自轉。 [0022] 該電漿清洗的具體操作及工藝參數可為：將鋁或鋁合金 基體11固定於真空鍍膜機20的鍍膜室21中的轉架上，將 該鍍膜室21抽真空至約為8. 0x1 0_3Pa，然後向鍍膜室21 内通入流量約為500sccm(標準狀態毫升/分鐘）的氬氣（ 純度為99. 999%)，並施加-500〜-800V的偏壓於鋁或鋁 合金基體11，對銘或#8合金基體11表面進行電漿清洗， 清洗時間為5 ~ 1 0 m i η。 [0023] (1) 採用磁控濺射法在經電漿清洗後的鋁或鋁合金基 100115410 表單編號Α0101 第6頁/共15頁 1002025784-0 201243069 Ο [0024] ❹ [0025] [0026] 體11上濺鍍一第一非晶態薄膜層1 31。該第一非晶態薄膜 層131為Α1Ν層或Al2〇3層。形成第一非晶態薄膜層i3i的 具體操作方法及工藝參數為：設置鋁靶23的功率為 5〜15kW ;以氮氣或氧氣為反應氣體，反應氣體的流量為 100〜200sccm，以氬氣為工作氣體，氬氣流量為 100〜200sccm ;對鋁或鋁合金基體11施加-i〇〇〜_3〇〇v的 偏壓’並加熱所述鍍膜室21至溫度為120〜200°C，鑛膜 時間可為10~30miη。濺射完成該第一非晶態薄膜層1 31 後，關閉所述鋁靶23的電源。 (2 )於所述第一非晶態薄膜層131上藏射一第二非晶態 薄膜層133。該第二非晶態薄膜層133為Si層或Si〇 層。形成第二非晶態薄膜層133的具體操作方法及工藝參 數為：以矽靶24為靶材，其矽靶24的功率為8〜20kW ;以 氧氣或氮氣為反應氣體，反應氣體的流量為 100~250sccm ’以氬氣為工作氣體，氬氣流量為 100〜200ccm ;對鋁或鋁合金基體11施加-loo一300V的 偏壓，並加熱所述鍍膜室21至溫度為120〜200°C，鑛膜 時間可為10〜30min。錢射完成該第一非晶態薄膜層m 後，關閉所述矽靶24的電源。 (3)重複上述步驟（1)及（2)，以交替沉積第—非晶 態薄膜層131及第二非晶態薄膜層133 » 可以理解的’在沉積所述複合防護層13的過程中，亦可 交換所述第一非晶態薄膜層131及第二非晶態薄膜層13 3 的沉積順序。 100115410 表單編號A0101 第7頁/共15頁 1002025784-0 201243069 [0027] 關閉負偏壓及靶材的電源，停止通入氬氣及反應氣體， 待所述複合防護層13冷卻後，向鍍膜内通入空氣，打開 鍍膜室門，取出鍍覆有複合防護層13的鋁或鋁合金基體 11 ° [0028] 經丄述方式形成的第一非晶態薄膜層1 31及第二非晶態薄 膜層1 33的膜層中不存在晶態薄膜的晶體缺陷而具有較高 的緻密性，因此，可提高鑛膜件10的对腐餘性。 [0029] 進一步地，在腐蝕性介質侵入所述鍍膜件10的過程中， 由於第一非晶態薄膜層1 31與第二非晶態薄膜層1 33之間 存在較為清晰的膜層界面，增加了腐蚀性介質橫向移動 的趨勢，延長了腐蝕性介質的滲入路程，降低了腐蝕性 介質的滲入速度，從而減緩了發生腐蝕的速率，提高了 所述鍍膜件10的耐腐蝕性。更重要的係，所述複合防護 層13中存在多個所述界面，如此可大大提高所述鍍膜件 1 0的财腐钱性。 [0030] 下面藉由實施例來對本發明進行具體說明。 [0031] 實施例1 [0032] 本實施例所使用的真空鍍膜機20為中頻磁控濺射鍍膜機 〇 [0033] 電漿清洗：氬氣流量為50 0seem，鋁或鋁合金基體11的 偏壓為-500V，電漿清洗時間為8min。 [0034] 濺鍍第一非晶態薄膜層131 :鋁靶23的功率為8kW ;氮氣 流量為150sccm，氬氣流量為150sccm ;施加於紹或IS合 100115410 表單編號A0101 第8頁/共15頁 1002025784-0 201243069 金基體11的偏壓為-150V，鍍膜溫度為I5(TC，鍍膜時間 為12min，第一非晶態薄膜層131的厚度為5〇nm。 [0035] 濺鑛弟二非晶態薄膜層133 :石夕乾24的功率為10kW ;氮 氣流量為180ccm，氬氣流量為180sccm ;施加於紹或紹 合金基體11的偏壓為-150V，鍍膜溫度為15ITC，鍍膜時 間為18min ’第二非晶態薄膜層133的厚度為80nm。 [0036] 所述複合防護層13尹’該第一非晶態薄膜層131與第二非 晶態薄膜層133的總層數為6層。 〇 [0037] 實施例2 [0038] 本實施例所使用的真空鍍膜機20與實施例1中使用的相同 〇 [0039] 電漿清洗：氬氣流量為500sccm，鋁或鋁合金基體11的 偏壓為-60 0V，電漿清洗時間為5min » [0040] 濺鍍第一非晶態薄膜層131 :鋁靶23的功率為12kW ;氮 氣流量為180sccm，氬氣流量為180sccm ;施加於鋁或鋁 合金基體11的偏壓為-200V，鍍膜溫度為20(TC，鍍膜時 間為24min，第一非晶態薄膜層131的厚度為l〇〇nm。 [0041] 濺鍍第二非晶態薄膜層133 :矽靶24的功率為18kW ;氮 氣流量為180sccm，氬氣流量為220sccm ;施加於鋁或鋁 合金基體11的偏壓為- 200V，鑛膜溫度為200°C，鑛膜時 間為24m i η，第一非晶態薄膜層131的厚度為1 〇 〇nm。 [0042] 所述複合防護層13中，該第一非晶態薄膜層131與第二非 晶態薄膜層133的總層數為4層》 100115410 表單編號A0101 第9頁/共15頁 1002025784-0 201243069 [0043] 鹽霧試驗 [0044] 將上述製得的鍍膜件10進行鹽霧測試，具體測試方法及 結果如下： [0045] 進行35°C中性鹽霧（NaCl濃度為5%)測試。結果表明， 由本發明實施例1和實施例2的方法所製備的鍍膜件1 0在 72小時後才出現腐蝕現象。可見，所述鍍膜件10具有良 好的财腐钮性。 【圖式簡單說明】 [0046] 圖1為本發明一較佳實施例鍍膜件的剖視圖； [0047] 圖2係本發明一較佳實施例真空鍍膜機的示意圖。 【主要元件符號說明】 [0048] 鍍膜件：10 [0049] 鋁或鋁合金基體：11 [0050] 複合防護層：13 [0051] 第一非晶態薄膜層：131 [0052] 第二非晶態薄膜層：133 [0053] 真空鍍膜機：20 [0054] 鍍膜室：21 [0055] 鋁靶：23 [0056] 矽靶：24 [0057] 執跡：25 100115410 表單編號A0101 第10頁/共15頁 1002025784-0 201243069 [0058] 真空泵：3 0 100115410 表單編號A0101 第11頁/共15頁 1002025784-0

Claims (1)

  1. 201243069 七、申請專利範圍： 1 . 一種鍍膜件，包括鋁或鋁合金基體及形成於該鋁或鋁合金 基體上的複合防護層，其改良在於：所述複合防護層包括 複數第一非晶態薄膜層及複數第二非晶態薄膜層，所述複 數第一非晶態薄膜層和複數第二非晶態薄膜層交替排布： 所述第一非晶態薄膜層為氮化铭層或氧化銘層，所述第二 非晶態薄膜層為氮化矽層或二氧化矽層。 2 .如申請專利範圍第1項所述之鍍膜件，其中所述複合防護 層的最外層為第一非晶態薄膜層或第二非晶態薄膜層；所 述複合防護層與鋁或鋁合金基體直接結合的為第一非晶態 薄膜層或第二非晶態薄膜層。 3 .如申請專利範圍第1項所述之鍍膜件，其中所述複合防護 層的厚度為500〜1000nm。 4 .如申請專利範圍第1項所述之鍍膜件，其中所述第一非晶 態薄膜層和第二非晶態薄膜層的總層數為4〜10層。 5 .如申請專利範圍第1項所述之鍍膜件，其中所述第二非晶 態薄膜層及第二非晶態薄膜層分別藉由真空鍍膜的方式形 成。 6 . —種鍍膜件的製造方法，其包括如下步驟： 提供鋁或鋁合金基體； 藉由真空鍍膜的方式，於該鋁或鋁合金基體的表面形成複 合防護層，所述複合防護層包括複數第一非晶態薄膜層及 複數第二非晶態薄膜層，所述複數第一非晶態薄膜層和複 數第二非晶態薄膜層交替排布；所述第一非晶態薄膜層為 氮化鋁層或氧化鋁層，所述第二非晶態薄膜層為氮化矽層 100115410 表單編號A0101 第12頁/共15頁 1002025784-0 201243069 或二氧化石夕層。 7 .如申請專利範圍第6項所述之鍍膜件的製造方法，其中所 述複合防護層的最外層為第一非晶態薄膜層或第二非晶態 薄膜層；所述複合防護層與鋁或鋁合金基體直接結合的為 第一非晶態薄膜層或第二非晶態薄膜層。 8 .如申請專利範圍第6項所述之鍍膜件的製造方法，其中形 成所述第二非晶態薄膜層的步驟以如下方式進行：以鋁靶 為靶材，設置其功率為5~15kW ;選擇氮氣或氧氣為反應 氣體，反應氣體的流量為100~2 00sccm，以氬氣為工作 氣體，氬氣流量為100~200sccm ;施加於紹或銘合金基 體的偏壓為-100〜-300V，鍍膜溫度為120~200°C，鍍膜 時間為10〜30min。 9 .如申請專利範圍第6項所述之鍍膜件的製造方法，其中形 成所述第二非晶態薄膜層的步驟為：以矽靶為靶材，其功 率為8〜20kW ;以氧氣或氮氣為反應氣體，反應氣體的流 量為100~250sccm，以氬氣為工作氣體，氬氣流量為 100~200ccm ;施加於紹或紹合金基體的偏壓為 -1 00 — 300V，鍍膜溫度為120〜20(TC，鍍膜時間為 10~30miη。 100115410 表單編號Α0101 第13頁/共15頁 1002025784-0
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