201241887 ， 六、發明說明： 【發明戶斤屬之技術領域3 發明領域 本發明係有關光裝置單元之加工方法，其是將藉由剝 離(lift off)而讓半導體層由藍寶石基板等之基板剝離並接 合於金屬支撐板之光裝置單元分割為各個光裝置者。 發明背景 於藍寶石基板、SiC基板荨的蟲晶基板表面形成氣化錄 (GaN)等之半導體層（磊晶層），且於該半導體層，藉由形成 為格子狀之界道（分割預定線）而區劃LED等的多數光裝置 而形成之光裝置晶圓，由於莫氏硬度較高，不易以切削刀 - 進行分割，因此一般是藉由照射雷射束而分割為各個光裝 置，經分割之光裝置可利用於照明器具、行動電話、個人 電腦等的電氣機器（譬如參照曰本專利公開公報特開平 10-305420號）。 又，最近，藉由雷射剝離而將積層於藍寶石基板、sic 基板等的蟲晶基板上之半導體層由基板剝離，接合於作為 钥(Mo)、銅(Cu)等之散熱體的金屬支樓板，並將形成有多 數光裝置之半導體層移動更換至金屬支撐板，之後，對分 割預定線照射雷射束’並與金屬支樓板—起分割為各個光 裝置之技術，係揭示於譬如日本特表2005-5㈣5號公報。 依該稱為雷射剝離之技術，係可反覆使用高價之藍寶 石基板、SiC基板等，進而，光裝置接合於作為散熱體之金 201241887 屬支撐板，因此有軸魅料良之優點。 先行技術文獻 專利文獻 專利文獻1日本專利公開公報特開平i ο」Μ·號 專利文獻2日太4大 本特表2005-516415號公報 【明内】 發明概要 發明欲解決之課題 ；；由於金屬支撐板之線性膨脹係數較大，因此會 因雷射束之照射而姦 度生之熱，抑或因溝槽之形狀使得内部 應力開放而產生撼s 頌展’且以一定間隔設定之分割預定線之 間隔產生變化，肉^、， 、 M而以一疋之間隔，即，預定間距切割送 ^並照射雷射切，雷射束錢離分割預定線而有損傷光 裝置之虞。 “ 係有鐵於此點而創作完成者，其目的是提供- 種半導體層由基_離並接合於金屬支職之絲置單 K #預錢照射雷射束而不會損傷光裝置且分割為 各個光裝置之光裝置單元之加工方法。 用以欲解決課題之手段 …依本發明，係、提供—種光裝置單元之加工方法，其特 徵疋將具有接合於金屬支撑板表面之半導體層，且於該半 導體層具有以分割就線區劃多數光裝置而形成之装置區 域、以及圍繞該裝置區域之外周剩餘區域之光裝置元件， 沿分割狀線㈣雷射束㈣成分割溝並分割為各個光裝 201241887 法包含有僅對形成於光裝 溝之分割溝形_序/割預定線難雷射束而形成分割 發明效果 置區::::之光裝置單元之加工方法，係僅對形成於裝 、准持夕0卜周剩餘區域之強度且抑制裝置區域之擴展因此 分割=線:或因照?雷射束而讓光裝置單元受到加熱， 預定線對光/1隔㈣乎不會產生變化，可消除偏離分割 圖:::::置照射雷射束而損傷光裝置之問題。 第1圖係雷射束加工裝置之外觀立體圖。 弟2圖係雷射束照射單元之區塊圖。 體之光裝置單元 第3圖係經切割膠帶而支樓於環狀框 的立體圖。 第4圖係說明分割溝形成程序之立體圖。 第5圖係說明分騎形成料之立體圖。 t實施方式3 用以實施發明之形態 以下參照圖式5羊細說明本發明之實施形態。第i圖係 顯示適於實施本發明之衫置單元之分财法的雷射加工 裴置2之概略構成圖。 雷射加工裝置2包含有可於χ轴方向移動地搭載於靜止 基口 4上之第1滑塊6。第丨滑塊G係藉由滚珠螺桿8及脈衝馬 201241887 達10構成之加工搬送機構12，沿一對導軌14而於加工搬送 方向，即X軸方向移動。 第2滑塊16係可於γ軸方向移動地搭載於第丨滑塊6上。 即，第2滑塊16係藉由滾珠螺桿18及脈衝馬達2〇構成之切出 搬送機構22,沿一對導軌24而於切出方向，即γ軸方向移動。 於第2滑塊16上，經圓筒支撐部構件26而搭載有工作盤 28 ’工作盤28可藉由加工搬送機構12及切出搬送機構22而 於X軸方向及Y軸方向移動。工作盤28包含有保持經切割膠 帶而支撐於框體之晶圓的保持面，且於工作盤28設有夾持 框體之夾具30。 於靜止基台4直立設有柱體32，於該柱體32安裝有收容 雷射束照射早元34之盒體35。雷射束照射單元34係如第2圖 所示，包含有讓YAG雷射或YOV4雷射振盈之雷射振盈器 62、重複頻設定機構64、脈衝寬度調整機構66及功率調整 機構68。 藉由雷射束照射單元34之功率調整機構68而調整為預 定功率之脈衝雷射束，係以安裝於盒體35前端之集光器36 的鏡體70加以反射，進而，以集光用物鏡72而集光並照射 至保持於工作盤28之光裝置單元Η。 於盒體35之前端部，配設有與集光器36整列列在X轴方 向且可進行雷射加工，檢測加工區域之攝像機構38。攝像 機構38包含有可以可視光拍攝半導體晶圓之加工區域的_ 般CCD等的攝像元件。 攝像機構38進而包含有紅外線攝像機構，且所拍攝之 201241887 影像信號係發送至控制器（控制機構)40，前述紅外線攝像機 構是由對光裝置單元11照射紅外線之紅外線照射機構、捕 捉以紅外線照射機構而照射之紅外線的光學系統、及輸出 對應藉由該光學系統而捕捉到之紅外線的電性信號之紅外 線CCD等的紅外線攝像元件構成。 控制器40包含有以電腦構成且依控制程式進行演算處 理之中央處理裝置(CPU)42 ;儲存控制程式等之唯讀記憶體 (ROM)44、儲存演算結果等之可加以讀取之隨機存取記憶 體(RAM)46、計數器48、輸入介面50及輸出介面52。 56係由沿導轨14配設之光學尺54及配設於第1滑塊6之 未圖式的讀取頭構成的加工搬送量檢測機構，加工搬送量 檢測機構56之檢測信號輸入至控制器40之輸入介面5〇。 6 0係由沿導軌24配設之光學尺5 8及配設於第2滑塊16 之未圖式的讀取頭構成之割出搬送量檢測機構，割出搬送 量檢測機構60之檢測信號輸入至控制器4〇之輸入介面50。 以攝像機構38拍攝之影像信號亦輸入至控制器40之輸 入介面50。另一方面’由控制器40之輸出介面52 ,控制信 號係輸出至脈衝馬達10、脈衝馬達20、雷射束照射單元34 等。 其次’參照第3圖，說明雷射加工裝置2之加工對象， 即晶圓形狀之光裝置單元11之構成。光裝置單元u係藉由 雷射剝離而由光裝置晶圓將氛化錄(GaN)等的半導體層15 由藍寶石基板剝離，並藉由熔焊等接合於作為鉬(M〇)、銅 (Cu)等之散熱體的金屬支撐板13。 201241887 包含有藉由此種雷射剝離而接合於金屬支撐板13之半 導體層15之光裝置單元11之製造，於可再利用高價之藍寶 石基板或SiC基板等的磊晶基板之點係為優異。進而，因半 導體層15接合於金屬支撐板13，故，由光裝置單元11分割 之光裴置19於散熱特性等之點係表現優良。 於半導體層15之雷射剝離，係使用譬如yag雷射之第 三諧波，即波長355nm之雷射束。藍寶石基板相對於此波長 之雷射束係透明。 雷射束係由基板側照射，放射能於藍寶石基板與GaN 半導體層之間的交界層加以吸收，此交界層是加熱至譬如 850°C以上之高溫。GaN交界層於該溫度係在氮氣產生下加 以分解，半導體層與基板之結合分離。 分離之半導體層係以熔焊或接著劑等而接合於金屬支 撐板13，製造晶圓形狀之光裝置單元11。於光裝置單元η 之表面，於藉由形成為格子狀之多數分割預定線（界道）17 而區劃之各區域’係形成有LED(發光二極體）、LD(雷射二 極體）等的光裝置19。 如此構成之光裝置單元11於其表面包含形成有複數個 光裝置19之裝置區域21 ’以及圍繞裝置區域21之外周剩餘 區域23。 於光裝置單元11 ’因半導體層15由藍寶石基板剝離且 接合於金屬支撐板13，故於金屬支撐板13上形成有依p型半 導體層及η型半導體層之順序而積層之複數個光裝置19。 於光裝置單元11分割為各個光裝置19，因光裝置單元 201241887 11具有金屬支撐板13 ’故不易以切削刀進行切削，宜使用 雷射加工裝置。 於光裝置單元11分割為各個光裝置19前，光裝置單元 11係黏著於黏著帶，即切割膠帶τ，切割膠帶了之外周部黏 著於％狀框F °藉此’光裝置單元狀經由切割膠帶τ而以 環狀框F加以支撐。 其次’詳細說明使用雷射加工裝置2之本發明之光裝置 單元之分割方法。首先，卩雷射加工裝置2之工作盤28吸引 保持經切割膠打而以環狀框F加以支狀光裝置單元η， 並以夾具30挾住環狀框f。 接著，讓工作盤28於Χ軸方向移動，讓光裝置單元^ 定位於攝像機構38之正下方。以攝像機構38拍攝光裝置單 兀11之加工區域’執行進行讓照射雷射束之雷射束照射翠 7〇34之集絲36與分割敢線1<7對位之樣式㈣等的影像 處理，完成雷射束照射位置之對準。 右於第1方向伸長之分割預定線17的對準結束，將工作 盤28旋轉9G度，有關在與於第1方向伸長之分割預定線17正 交之第2方向伸長之分割預定㈣，亦同樣地執行對準。 本發明之光裝置單元之加工方法，特徵係僅對裝置區 域21之4狀線丨7照射雷射束。即，對準程序結束後， 如第4圖所示’由雷射束照射單心之集光㈣僅對 域2i之分_域丨7照料射束㈣成分㈣25。重要的 是於外周剩餘區域23不照射雷射束。 該分割溝形成程序係於沿在襄置區域21的第】方向伸 201241887 長之所有的分割預定線17加以實施後，將工作盤28旋轉9〇 度’沿在裝置區域21之第2方向伸長之所有的分割預定線17 實施。沿於裝置區域21中之第i及第2方向伸長之所有的分 割預定線17而形成有分割溝25之狀態的立體圖，係於第5圖 加以顯示。 該分割溝形成程序之雷射加工條件係譬如下述般加以 設定。 光源 波長 輸出 光點形狀 搬送速度 LD激發Q開關 Nd : YAG脈衝雷射 355nm (YAG雷射之第三諧波）201241887, VI. Description of the Invention: [Technical Field of Invention] 3 Field of the Invention The present invention relates to a method of processing an optical device unit, which is to peel off a semiconductor layer from a substrate such as a sapphire substrate by lift off The light device unit joined to the metal support plate is divided into individual light devices. BACKGROUND OF THE INVENTION A semiconductor layer (epitaxial layer) of gasification recording (GaN) or the like is formed on a surface of a sapphire substrate or a SiC substrate ruthenium substrate, and a boundary layer is formed by forming a lattice-shaped boundary layer (the division line) The optical device wafer formed by arranging a plurality of optical devices such as LEDs is difficult to be divided by a cutter because of its high Mohs hardness. Therefore, it is generally divided into individual optical devices by irradiation of a laser beam, and is divided. The light device can be used for an electric device such as a lighting fixture, a mobile phone, or a personal computer (see, for example, Japanese Laid-Open Patent Publication No. Hei 10-305420). In addition, a semiconductor layer laminated on a crystal substrate such as a sapphire substrate or a sic substrate is peeled off from the substrate by laser peeling, and bonded to a metal branch as a heat sink of a key (Mo) or copper (Cu). The floor slab, and the semiconductor layer formed with a plurality of optical devices is moved and replaced with a metal support plate, and then the technique of illuminating the divided beam with the laser beam and dividing it into a metal device is disclosed in Japan. Special Table 2005-5 (4) Bulletin No. 5. According to the technology called laser peeling, it is possible to repeatedly use a high-priced sapphire substrate, a SiC substrate, etc., and further, the optical device is bonded to the gold 201241887 support plate as a heat sink, and therefore has the advantage of being excellent. For the purpose of solving the problem of the invention; The linear expansion coefficient of the support plate is large, so the heat generated by the irradiation of the laser beam is caused by the irradiation of the laser beam, or the internal stress is opened due to the shape of the groove, and the predetermined line is set at a certain interval. The interval is changed, and the meat, , , and M are cut at a predetermined interval, that is, at a predetermined interval, and the laser beam is irradiated, and the laser beam is separated from the predetermined line to damage the optical device. "There is a person who has iron at this point and whose purpose is to provide - a semiconductor layer that is separated from and bonded to the metal branch. The K-pre-light irradiates the laser beam without damaging the optical device and dividing A method for processing an optical device unit of each optical device. A method for solving the problem... According to the present invention, there is provided a method for processing an optical device unit, which is characterized in that it has a semiconductor layer bonded to a surface of a metal supporting plate And the semiconductor layer has a device region formed by dividing a plurality of optical devices by dividing the line, and an optical device component surrounding the remaining region of the device region, and dividing the trench (4) into a dividing groove along the dividing line (4) and dividing into Each of the optical installations 201241887 includes a method of processing the optical device unit that forms the split effect effect area only for the split trench shape/sequence line formed in the optical trench, and is only for the optical device unit. The intensity formed in the remaining area of the loading and holding period and the expansion of the suppression device area is therefore divided = line: or the light device unit is heated by the laser beam, and the predetermined line is light/1 separated (four) A change can be made to eliminate the problem of deviating the segmentation map::::: illuminating the laser beam and damaging the optical device. Fig. 1 is a perspective view of the appearance of the laser beam processing device. Brother 2 is a block of the laser beam irradiation unit Fig. 3 is a perspective view of the ring frame of the branch through the cutting tape. Fig. 4 is a perspective view showing the forming process of the dividing groove. Fig. 5 is a perspective view showing the forming material of the riding. MODE FOR CARRYING OUT THE INVENTION Embodiments of the present invention will be described below with reference to the accompanying drawings. Fig. 5 is a schematic view showing a laser processing apparatus 2 suitable for implementing the method of dividing the shirt unit of the present invention. The laser processing apparatus 2 includes a first slider 6 that is mounted on the stationary base 4 so as to be movable in the x-axis direction. The third slider G is processed by the ball screw 8 and the pulse horse 201241887 up to 10. The conveyance mechanism 12 moves along the pair of guide rails 14 in the machining conveyance direction, that is, in the X-axis direction. The second slider 16 is movably mounted on the second slider 6 in the γ-axis direction. That is, the second slider 16 Cut out by ball screw 18 and pulse motor 2〇 The feeding mechanism 22 moves along the pair of guide rails 24 in the cutting direction, that is, in the γ-axis direction. The second slider 16 is mounted with the working disk 28 via the cylindrical support member 26'. The working disk 28 can be processed. The transport mechanism 12 and the transport mechanism 22 are cut and moved in the X-axis direction and the Y-axis direction. The work disk 28 includes a holding surface for holding the wafer supported by the frame by the dicing tape, and is provided on the work disk 28 The frame 30 is provided with a column 32 erected on the stationary base 4, and a box 35 for accommodating the laser beam irradiation early element 34 is mounted on the column 32. The laser beam irradiation unit 34 is as shown in Fig. 2. The laser vibrator 62, the repetition frequency setting mechanism 64, the pulse width adjustment mechanism 66, and the power adjustment mechanism 68 for YAG laser or YOV4 laser oscillation are included. The pulsed laser beam adjusted to a predetermined power by the power adjustment mechanism 68 of the laser beam irradiation unit 34 is reflected by the mirror body 70 of the concentrator 36 attached to the front end of the casing 35, and further used for collecting light. The objective lens 72 collects light and illuminates the light device unit 保持 held by the work disk 28. At the front end of the casing 35, an image pickup mechanism 38 which is arranged in the X-axis direction with the concentrator 36 and which is capable of performing laser processing and detecting the processing region is disposed. The imaging unit 38 includes an imaging element such as a CCD or the like that can image a processing area of the semiconductor wafer with visible light. The imaging unit 38 further includes an infrared imaging unit, and the captured 201241887 video signal is transmitted to a controller (control unit) 40, which is an infrared irradiation unit that irradiates the optical unit 11 with infrared rays, and is captured by infrared rays. An optical system that emits infrared rays by a mechanism and an infrared imaging element that outputs an infrared CCD or the like that corresponds to an electrical signal of infrared rays captured by the optical system. The controller 40 includes a central processing unit (CPU) 42 that is configured by a computer and performs calculation processing according to a control program; a read-only memory (ROM) 44 that stores a control program or the like, a stored calculation result, and the like that can be read and stored randomly. A memory (RAM) 46, a counter 48, an input interface 50, and an output interface 52 are taken. 56 is a processing conveyance amount detecting mechanism composed of an optical scale 54 disposed along the guide rail 14 and a read head disposed in the first slider 6, and the detection signal of the processing conveyance amount detecting mechanism 56 is input to the control. The input interface of the device 40 is 5〇. The cut-off conveyance amount detecting mechanism constituted by the optical scale 58 disposed along the guide rail 24 and the read head disposed in the second slider 16 cuts off the detection signal of the conveyance amount detecting mechanism 60. Input to the input interface 50 of the controller 4〇. The image signal captured by the camera unit 38 is also input to the input interface 50 of the controller 40. On the other hand, the control signal is output from the output interface 52 of the controller 40 to the pulse motor 10, the pulse motor 20, the laser beam irradiation unit 34, and the like. Next, the configuration of the laser processing unit 2, that is, the wafer-shaped optical unit 11 will be described with reference to Fig. 3 . In the optical device unit u, the semiconductor layer 15 such as a GaN film is peeled off from the sapphire substrate by the optical device wafer by laser peeling, and bonded as molybdenum (M〇) or copper by welding or the like. A metal support plate 13 of a heat sink such as Cu). 201241887 The manufacture of the optical device unit 11 including the semiconductor layer 15 bonded to the metal supporting plate 13 by such laser peeling is excellent in the point of reusing an epitaxial substrate such as a high-priced sapphire substrate or a SiC substrate. . Further, since the semiconductor layer 15 is bonded to the metal supporting plate 13, the optical unit 19 divided by the optical unit 11 is excellent in heat dissipation characteristics and the like. The laser stripping of the semiconductor layer 15 uses a third harmonic such as a yag laser, i.e., a laser beam having a wavelength of 355 nm. The sapphire substrate is transparent to the laser beam at this wavelength. The laser beam is irradiated from the substrate side, and the radiant energy is absorbed by the interface layer between the sapphire substrate and the GaN semiconductor layer, and the interface layer is heated to a temperature of, for example, 850 ° C or higher. The GaN interface layer is decomposed at this temperature under the action of nitrogen gas, and the semiconductor layer is separated from the substrate by separation. The separated semiconductor layer is bonded to the metal supporting plate 13 by welding or an adhesive or the like to fabricate the wafer-shaped optical device unit 11. On the surface of the optical device unit η, LEDs (light emitting diodes) and LDs (laser diodes) are formed in each region defined by a plurality of predetermined dividing lines (boundaries) 17 formed in a lattice shape. Light device 19. The optical device unit 11 thus constructed includes, on its surface, a device region 21' in which a plurality of optical devices 19 are formed, and a peripheral remaining region 23 around the device region 21. In the optical device unit 11', since the semiconductor layer 15 is peeled off from the sapphire substrate and bonded to the metal supporting plate 13, a plurality of optical devices laminated in the order of the p-type semiconductor layer and the n-type semiconductor layer are formed on the metal supporting plate 13. 19. The optical unit unit 11 is divided into individual optical units 19. Since the optical unit 201241887 11 has a metal supporting plate 13', it is difficult to cut with a cutting blade, and a laser processing apparatus is preferably used. Before the optical device unit 11 is divided into the respective optical devices 19, the optical device unit 11 is adhered to the adhesive tape, that is, the dicing tape τ, and the outer peripheral portion of the dicing tape is adhered to the %-shaped frame F°. The tape τ is supported by a ring frame F. Next, the method of dividing the optical unit of the present invention using the laser processing apparatus 2 will be described in detail. First, the work disk 28 of the laser processing apparatus 2 sucks and holds the light-shielding unit η in the ring frame F by the cutting glue, and clamps the ring frame f with the jig 30. Next, the work disk 28 is moved in the direction of the x-axis, and the optical device unit is positioned directly below the image pickup mechanism 38. The image processing unit 38 captures the processing area of the optical unit unit 11 and performs image processing such that the laser beam illuminating the laser beam illuminates the cluster 36 of the laser beam and the pattern of the division line 1 <7 alignment (4) , complete the alignment of the laser beam irradiation position. The alignment of the dividing line 17 extending to the right in the first direction is completed, and the working disk 28 is rotated by 9 G degrees, and the division is predetermined in the second direction orthogonal to the dividing line 17 extending in the first direction (4). The alignment is performed similarly. The method of processing the optical device unit of the present invention is characterized in that only the 4-beam 丨7 of the device region 21 is irradiated with a laser beam. Namely, after the end of the alignment process, as shown in Fig. 4, the collected light of the single center by the laser beam (4) is only for the sub-domain _7 of the domain 2i, and the beam (four) component (four) 25 is taken. It is important that the laser beam is not illuminated in the peripheral remaining area 23. The dividing groove forming program is performed by rotating all the dividing lines 17 extending in the direction of the first direction of the mounting region 21 by 201241887, and then rotating the working disk 28 by 9 degrees to extend in the second direction of the device region 21. All of the division lines 17 are implemented. A perspective view showing a state in which the dividing grooves 25 are formed along all of the dividing lines 17 which are elongated in the i-th and second directions in the apparatus region 21 is shown in Fig. 5. The laser processing conditions of the division groove forming program are set as follows. Light source Wavelength Output Spot shape Transport speed LD excitation Q switch Nd : YAG pulse laser 355nm (third harmonic of YAG laser)
7.0W 短軸ΙΟμηι、長轴1〇〜2〇〇μηι之糖圓 100mm/s 分割溝形成程序僅實施一次係僅形成淺的分割溝2 5， 並無法將光褒置單元11分割為各個光裝置19。因此，本發 明之加工方法係實施複數次(本實卿態為6次)分割溝形成 程序而將光裝置單別分割為各個光裝置19。 第二次之後的分割溝形成程序係如第5圖所示，由集光 益36/α形成於裝置區域21之分料25而照射雷射束，形成 第二次之後的分割溝25。 本實施形態中，藉由反覆進行六次分割溝形成程序， 可將光裝置早仙分割為各個光裝置19，並謂外周剩餘 區域23由各光裝置19分離。 本毛明之光裝置單元之加工方法中，因未於光裝置單 元U之外_餘區域23照射雷射束，故可維持外周剩餘區 201241887 域23之強度且抑制裝置區域21之擴展。 因此，即使由於雷射束之照射而使光裝置單元11之裝 置區域21之溫度上升，亦可藉由外周剩餘區域23而抑制裝 置區域21之擴展，故，可抑制分割預定線17之間隔產生變 化，且可避免雷射束偏離分割預定線17而照射至光裝置 19，造成光裝置19損傷之問題。 【圖式簡單說明】 第1圖係雷射束加工裝置之外觀立體圖。 第2圖係雷射束照射單元之區塊圖。 第3圖係經切割膠帶而支撐於環狀框體之光裝置單元 的立體圖。 第4圖係說明分割溝形成程序之立體圖。 第5圖係說明分割溝形成程序之立體圖。 【主要元件符號說明】 2...雷射加工裝置 16...第2滑塊 4...靜止基台 17···分割預定線(界道) 6...第1滑塊 18...滾珠螺桿 8...滾珠螺桿 19...光裝置 10…脈衝馬達 20...脈衝馬達 11...光裝置單元 21...裝置區域 12...加工搬送機構 22...切出搬送機構 13...金屬支撐板 23...外周剩餘區域 14...導軌 24...導執 15...半導體層 25...分割溝 201241887 26...圓筒支撐部構件 50...輸入介面 28...工作盤 52...輸出介面 30...夾具 54...光學尺 32...柱體 56...力σ工搬送量檢測機構 34...雷射束照射單元 60...割出搬送量檢測機構 35...盒體 62...雷射振盪器 36...集光器 64...重複頻設定機構 38...攝像機構 66...脈衝寬度調整機構 40...控制器 68...功率調整機構 42...中央處理裝置(CPU) 70...鏡體 44...唯讀記憶體(ROM) 72...集光用物鏡 46...隨機存取記憶體(RAM) F...環狀框 48...計數器 Τ...切割膠帶 s 127.0W short axis ΙΟμηι, long axis 1〇~2〇〇μηι sugar circle 100mm/s The division groove forming procedure is performed only once to form only the shallow dividing groove 2 5, and the optical unit 11 cannot be divided into individual lights. Device 19. Therefore, the processing method of the present invention divides the optical device into individual optical devices 19 by performing a plurality of division processes (6 times in this embodiment). The dividing groove forming process after the second time is as shown in Fig. 5, and the laser beam is irradiated by the collecting material 25 formed in the device region 21 by the light collecting benefit 36/α to form the dividing groove 25 after the second time. In the present embodiment, by repeating the dividing groove forming process six times, the optical device can be divided into the respective optical devices 19, and the peripheral remaining region 23 is separated by the respective optical devices 19. In the processing method of the optical unit of the present invention, since the laser beam is irradiated to the remaining area 23 other than the optical unit U, the intensity of the outer peripheral area 201241887 can be maintained and the expansion of the apparatus area 21 can be maintained. Therefore, even if the temperature of the device region 21 of the optical device unit 11 rises due to the irradiation of the laser beam, the expansion of the device region 21 can be suppressed by the peripheral remaining region 23, so that the interval between the planned dividing lines 17 can be suppressed. The change is made, and the laser beam is prevented from being deflected to the optical device 19 by deviating from the dividing line 17 to cause a problem of damage to the optical device 19. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing the appearance of a laser beam processing apparatus. Figure 2 is a block diagram of a laser beam irradiation unit. Fig. 3 is a perspective view of the optical unit supported by the dicing tape on the annular frame. Fig. 4 is a perspective view showing the division groove forming program. Fig. 5 is a perspective view showing the division groove forming program. [Description of main component symbols] 2: Laser processing device 16... Second slider 4: Static base 17··· Division of predetermined lines (boundary) 6...1st slider 18. .. ball screw 8: ball screw 19...optical device 10...pulse motor 20...pulse motor 11...optical device unit 21...device region 12...processing transport mechanism 22... Cutting out the conveying mechanism 13...the metal supporting plate 23...the outer peripheral remaining area 14...the guide rail 24...the guide 15...the semiconductor layer 25...the dividing groove 201241887 26...the cylindrical supporting portion Member 50... Input interface 28...Working disk 52...Output interface 30...Clamp 54...Optical ruler 32...Cylinder 56... force σ working amount detection mechanism 34.. The laser beam irradiation unit 60...cuts the conveyance amount detecting mechanism 35...the casing 62...the laser oscillator 36...the concentrator 64...the repetition frequency setting mechanism 38...the camera Mechanism 66...pulse width adjustment mechanism 40...controller 68...power adjustment mechanism 42...central processing unit (CPU) 70...mirror 44...read only memory (ROM) 72 ... collecting objective lens 46... random access memory (RAM) F... ring frame 48... counter Τ... cutting tape s 12