201241867 六、發明說明： 【發明所屬之技術頜城】 [0001] 本發明涉及一種半導體製造領域内的用於製程模組的射 頻屏蔽裝置。 [0002] 〇 【先前技術】 在半導體製程中’各種製程很大程度上依賴工藝片的溫 度。因此，對工藝片的溫度控制是半導體製程中非常重 要的一環，而由於工藝片具有一定尺寸’能夠對工藝片 的溫度進行均勻控制更是至關重要的。工藝片的溫度是 由等離子處理、熱輻射、熱傳導以及工藝片表面發生的 化學過程來確定的。 現有技術通常在工藝片支撐台中設置冷卻通路，利用冷 卻通路中的冷卻劑和工藝片支撐臺上的工藝片進行熱交 換，以控制工藝片的温度。其中，為了使得所述冷卻通 路中的冷卻劑是可以流動的，現有技術的半導體處理反 應腔還會設置一個冷卻裝置用於提供和回收冷卻劑，因 G 此，在所述冷卻裝置和冷卻通路之間還會設置至少兩個 通道，其一用於往冷卻通路中傳輸冷卻劑，另一用於將 冷卻劑延伸出冷卻跡，_兩個通道均連接於所述冷 100143519 卻裝置。 傳統的等離子體處理反應肢通常只設置兩個通道和少量 冷卻通路（通常為〆個環形的冷卻通路）。第1圖示出了 現有技術的用於等離子體處理反應腔的射頻屏蔽裝置的 主視圖，如第i圖所示，等離子禮處理反應腔1〇0特別地 為一個等離子體刻蚀反應胺’其用於對工藝片（典型地 為-石夕片）進行刻蚀製程處理，所述石夕片設置於工藝片 表單編號A0101 第3頁/共I8夷 1003460867-0 201241867 支擇台102上。所述工藝片支撐台中設置有兩個冷卻通路 ，分別為第-冷卻通路104a和第二冷卻通路1()仆，其分 别連接於位於反應腔殼體下方的冷卻裝置（未示出）。 所述冷卻裝置是供應和處理冷卻劑的場所。具體地，所 述第一冷卻通道l〇4a用於將冷卻裝置中冷卻劑傳輸至工 藝片支撐台102中以對其上方放置的矽片溫度進行調節， 相應地，所述第一冷卻通道l〇4b則用於將從所述工藝片 支撐台102中的冷卻劑延伸出所述工藝片支標台並傳輸至 冷卻裝置，如此來完成冷卻劑的迴圈使用。 如第1圖所示’第一冷卻通道l〇4a和第二冷卻通道i〇4b 需要延伸出反應腔殼體才能連接於設置於等離子體處理 反應腔100之下的冷卻裝置，因此必然會在反應腔殼體上 存在介面。例如’所述等離子體處理反應腔1〇〇還包括一 接地板103，其上設置有第一介面101a和101b，用於使 得所述第一冷卻通道l〇4a和第二冷卻通道104b延伸出所 述等離子體處理反應腔100。本領域技術人員應當理解， 由於等離子體處理反應腔中需要通過射頻源來激發其中 存在的等離子體來對矽片表面進行刻蝕，因此，其中必 然存在射頻電磁場。結合附第1圖和附第2圖’由於第一 冷卻通道104a和第二冷卻通道104b需要從等離子體處理 反應腔反應腔殼體内部延伸出反應腔殼體以與所述冷卻 裝置聯通，其必然在接地板103上存在至少存在一個空洞 101，以保證所述第一冷卻通道l〇4a和第二冷卻通道 104b能夠順利延伸出所述反應腔殼體。 然而，上述空洞101的存在會導致反應腔殻體中射頻電磁 場的洩漏問題’為了屏蔽射頻洩漏’現有技術通常的做 100143519 表單編號A0101 第4頁/共18頁 1003460867-0 法為在由金屬（例如：紹）製成的屏蔽裝置1〇5覆蓋反 應腔殼體接地板103以及第—冷卻管l〇4a和第二冷卻管 104b之間的空隙，並利用螺絲釘將該屏蔽裝置1〇5安裝到 反應腔殼體接地板103上，並包覆住部分延伸出反應腔殼 體的第一冷卻管l〇4a和第二冷卻管1〇4b。 第2圖是現有技術的用於等離子體處理反應腔的射頻屏蔽 裝置的仰視圖。如第2圖所示，由於現有技術的射頻屏蔽 裝置105是由金屬鋁製程的，而金屬的難延展性和相對易 碎的特性使得現有技術提供的射頻屏蔽裝置難以一體成 型，因為若採用如第1圖所示的外觀製造一體的射頻屏蔽 裝置105，其將具有一定硬度，而第一冷卻通道1〇4a和第 二冷卻通道10 4b也具有一定硬度.，由此，會導致難以所 述第一冷卻通道104a和第二冷卻通道1〇41)穿過上述一體 成型的射頻屏蔽裝置105，甚至造成因相互擠壓/接觸造 成的裝置損壞問題。 由此，現有技術往往將射頻屏蔽裝置丨05分成至少兩塊， 如第2圖所示，包括第一射頻屏蔽裝置1〇5a和第二射頻屏 蔽裝置105b，兩者大約沿著第一冷卻通道1〇牦和第二冷 卻通道104b的中切線1〇5’並通過螺絲擠壓以結合在一起 因此，現有技術的射頻屏蔽襞置與冷卻通道結合的緊密 程度不夠，可能發生射頻屏蔽不夠充分的情況。並且， 隨著溫度控制均勻性和準確性提出了越來越高的要求， 需要在工藝片下設置兩個環形的冷卻通路，即工藝片雙 區域溫度控制或雙冷卻通路（dual channel)，即需要 屏蔽四個冷卻通道延伸出反應腔殼體而帶來的射頻洩漏 表單編號 A0101 % 5 I/Jt is I 1[]n, 201241867 問題，若利用現有技術的射頻屏蔽機制，其結構更加複 雜’比如需要兩塊以上的子塊通過螺絲結合而成，射頻 屏蔽裝置與冷卻通道結合的緊密程度更加不充分，甚至 難以實現屏蔽效果。 並且，由於現有技術的射頻屏蔽裝置是採用金屬材料製 成的，其往往採用螺絲將射頻屏蔽裝置固定於接地板上 ，因此，技術人員需要彎身在反應腔殼體下面進行安裝/ 拆卸的工作。 再者，結合第1圖，為了保證現有技術的金屬射頻屏蔽裝 置的可靠性，其往往具有一定高度和體積，佔用了較多 空間位置。 【發明内容】 [0003] 針對現有技術的上述問題，本發明提供的一種用於等離 子體處理反應腔的射頻屏蔽裝置’其能夠更好的進行射 頻屏蔽，並且安裝/拆卸方便’節省反應腔空間。 本發明第一方面提供了一種用於等離子體處理反應腔的 射頻屏蔽裝置，所述等離子體處理反應腔包括反應腔殼 體，所述反應腔殼體上設置有空洞’其特徵在於，所述 射頻屏蔽裝置設置在所述反應腔殼體上並至少部分覆蓋 所述空洞，所述射頻屏蔽裝置由導電彈性體材料製成。 其中，所述反應腔殼體包括反應腔頂部、反應腔側壁、 反應腔底部。 進一步地，所述等離子體處理反應腔還包括反應腔内部 部件，其通過所述空洞從所述反應腔殼體内部延伸至外 部，所述射頻屏蔽裝置至少部分覆蓋所述反應腔内部部 100143519 件延伸出所述空洞的剩餘空隙部分’ 表單煸號A0101 第6頁/共18頁 並與所述反應腔内 1003460867-0 部部件的週邊接合處緊密結合。 優選地，所述反應腔内部部件為冷卻通道，所述反應腔 殼體包括位於所述反應腔下部的一接地板，所述空洞設 置於所述接地板上，所述冷卻通道通過所述空润延伸出 至所述反應腔殼體外部。 優選地，所述射頻屏蔽裝置採用下列任一項的方式設置 於所述反應腔殼體上：按鈕、掛鈎、枯合、卡套。 進一步地’所述導電彈性體材料為妙橡膠，所述石夕橡膠 中嵌入Ag或者A1顆粒。 可選地’所述等離子體處理反應腔包括至少兩個冷卻通 道’分別為用於將設置於反應腔殼體外部的冷卻裝置中 冷卻劑傳輸至工藝片支撐台中以對所述工藝片支撐臺上 方放置的工藝片溫度進行調節的第一冷卻通道和用於將 所述工藝片支撐台的冷卻劑延伸出所述工藝片支撐台並 傳輸至所述冷卻裝置的第二冷卻通道。 可選地，所述等離子體處理反應腔包括四個冷卻通道， 分別為用於將設置於反應腔殼體外部的冷卻裝置中冷卻 劑傳輸至工藝片支撐台中以對所述工藝片支撐臺上方放 置的工藝片溫度進行調卸的第一冷卻通道、第；：冷卻通 道，和用於將所述工藝片支撐台的冷卻劑延伸出所述工 藝片支撐台並傳輸至所述冷卻裝置的第二冷卻通道、第 四冷卻通道，其中’所述第_冷卻通道和第二冷卻通道 用於對所述工藝片的中央區域進行溫度控制，所述第三 冷卻通道和第四冷卻通道用於對工藝片的邊緣區域進行 溫度控制。 可選地，所述反應腔内部部件包括感測器光線管或氣缸 表單编號A0101 第7頁/共18頁 201241867 氣管。 本發明第二方面還提供了一種等離子體處理反應腔’其 特徵在於，所述等離子體處理反應腔包括本發明第一方 面提供的射頻屏蔽裝置。 【實施方式】 [0004] 下面結合附圖對本發明進行具體說明。 在下文中，將結合等離子體刻蚀反應腔對本發明進行描 述，但是應當理解’本發明不限於此’本發明適用的等 離子體處理反應腔包括但不限於等離子體刻餘反應腔/等 離子體化學氣相沉積反應腔/等離子體物理氣相沉積反應 腔/等離子體金屬有機化學物氣相沉積反應腔。 本發明第一方面提供了一種用於等離子體處理反應腔的 射頻屏蔽裝置，所述等離子體處理反應腔包括至少一個 反應腔殼體，所述反應腔殼體上設置有空洞’其中’所 述射頻屏蔽裝置設置在所述反應腔殼體上並至少部分覆 蓋所述空洞，所述射頻屏蔽裝置由導電彈性體材料製成 進一步地，所述反應腔殼體包括反應腔頂部、反應腔側 壁、反應腔底部。 根據本發明的一個優選實施例，所述等離子體處理反應 腔還包括多個反應腔内部部件，其通過所述空洞從所述 反應腔殼體内部延伸出所述反應腔殼體外部，所述射頻 屏蔽裝置至少部分覆蓋所述反應腔内部部件延伸出所述 空洞的剩餘空隙部分’並與所述反應腔内部部件的週邊 接合處緊密結合。優選地’所述反應腔内部部件包括冷 卻通道’其中，所述反應腔殼體包括位於所述反應腔體 100143519 表單煸號A0101 第8頁/共18頁 201241867 下部的一接地板，所述上的空洞設置於所述接地板上， 所述冷卻通道通過所述空洞延伸出至所述反應腔殼體外 部腔體。201241867 VI. Description of the Invention: [Technology of the Invention] [0001] The present invention relates to an RF shielding apparatus for a process module in the field of semiconductor manufacturing. [0002] 先前 [Prior Art] In the semiconductor process, the various processes depend to a large extent on the temperature of the process sheet. Therefore, temperature control of the process sheet is a very important part of the semiconductor process, and since the process piece has a certain size, it is essential to uniformly control the temperature of the process piece. The temperature of the process piece is determined by plasma treatment, heat radiation, heat transfer, and the chemical processes taking place on the surface of the process sheet. In the prior art, a cooling passage is usually provided in the process sheet support table, and the coolant in the cooling passage and the process piece on the process sheet support table are used for heat exchange to control the temperature of the process sheet. Wherein, in order to make the coolant in the cooling passage flowable, the prior art semiconductor processing reaction chamber is further provided with a cooling device for supplying and recovering the coolant, because of the cooling device and the cooling passage. At least two channels are also provided between one for transferring coolant into the cooling passage and the other for extending the coolant out of the cooling track, both of which are connected to the cold 100143519 device. Conventional plasma treated reaction limbs typically have only two channels and a small number of cooling passages (usually a circular cooling passage). Figure 1 is a front elevational view of a prior art radio frequency shielding device for a plasma processing reaction chamber. As shown in Figure i, the plasma processing chamber 1O0 is specifically a plasma etching reaction amine. It is used for performing an etching process on a process piece (typically, a slate piece), which is disposed on the process piece form No. A0101, page 3/I81003460867-0 201241867. The process sheet support table is provided with two cooling passages, a first cooling passage 104a and a second cooling passage 1 (serving), which are respectively connected to a cooling device (not shown) located below the reaction chamber housing. The cooling device is a place where the coolant is supplied and processed. Specifically, the first cooling passage 104a is used to transfer the coolant in the cooling device to the process sheet support table 102 to adjust the temperature of the cymbal placed above it, and correspondingly, the first cooling passage 1 The crucible 4b is used to extend the coolant from the process sheet support table 102 out of the process chip holder and to the cooling device, thus completing the circulation of the coolant. As shown in Fig. 1, the first cooling passage 104a and the second cooling passage i〇4b need to extend out of the reaction chamber housing to be connected to the cooling device disposed under the plasma processing chamber 100, so There is an interface on the reaction chamber housing. For example, the plasma processing reaction chamber 1 further includes a ground plate 103 on which the first interfaces 101a and 101b are disposed for extending the first cooling passage 104a and the second cooling passage 104b. The plasma treats the reaction chamber 100. Those skilled in the art will appreciate that the radio frequency electromagnetic field must be present due to the need to illuminate the surface of the ruthenium by the RF source in the plasma processing chamber. In conjunction with FIG. 1 and FIG. 2', since the first cooling passage 104a and the second cooling passage 104b need to extend from the interior of the plasma processing reaction chamber reaction chamber housing to communicate with the cooling device, There must be at least one void 101 present on the ground plate 103 to ensure that the first cooling passage 104a and the second cooling passage 104b can smoothly extend out of the reaction chamber housing. However, the presence of the above cavity 101 may cause leakage of radio frequency electromagnetic fields in the reaction chamber housing 'in order to shield RF leakage'. The prior art generally does 100143519 Form No. A0101 Page 4 / Total 18 Page 1003460867-0 The law is in the metal ( For example, the shielding device 1〇5 is formed to cover the gap between the reaction chamber housing ground plate 103 and the first cooling tube 104a and the second cooling tube 104b, and the shielding device 1〇5 is installed by screws. The reaction chamber housing ground plate 103 is attached to the first cooling tube 104a and the second cooling tube 1〇4b extending out of the reaction chamber housing. Figure 2 is a bottom plan view of a prior art RF shielding apparatus for plasma processing a reaction chamber. As shown in FIG. 2, since the prior art radio frequency shielding device 105 is made of metal aluminum, the metal's difficult ductility and relatively fragile characteristics make the radio frequency shielding device provided by the prior art difficult to integrally form, because if The appearance of the integrated RF shielding device 105 shown in FIG. 1 will have a certain hardness, and the first cooling passage 1〇4a and the second cooling passage 104b also have a certain hardness, thereby causing difficulty in the description. The first cooling passage 104a and the second cooling passage 110 are passed through the integrally formed radio frequency shielding device 105 described above, and even cause damage to the device due to mutual pressing/contacting. Thus, the prior art tends to divide the RF shielding device 丨05 into at least two blocks, as shown in FIG. 2, including the first RF shielding device 1〇5a and the second RF shielding device 105b, both along the first cooling channel. 1〇牦 and the middle tangent 1〇5' of the second cooling passage 104b are pressed by the screw to be combined. Therefore, the prior art RF shielding device is not tightly coupled with the cooling passage, and the RF shielding may be insufficient. Happening. Moreover, as temperature control uniformity and accuracy put forward higher and higher requirements, it is necessary to provide two annular cooling passages under the process sheet, that is, a dual-zone temperature control or a dual cooling channel of the process sheet, that is, RF leakage is required to shield the four cooling channels from the reaction chamber housing. Form number A0101 % 5 I/Jt is I 1[]n, 201241867 Problem, if the RF shielding mechanism of the prior art is used, the structure is more complicated' For example, more than two sub-blocks need to be combined by screws, and the tightness of the combination of the RF shielding device and the cooling channel is even insufficient, and it is even difficult to achieve the shielding effect. Moreover, since the prior art RF shielding device is made of a metal material, the RF shielding device is often fixed to the grounding plate by screws. Therefore, the technician needs to bend and work under the reaction chamber housing for installation/removal work. . Furthermore, in conjunction with Fig. 1, in order to ensure the reliability of the prior art metal RF shielding device, it tends to have a certain height and volume, occupying more space positions. SUMMARY OF THE INVENTION [0003] In view of the above problems of the prior art, the present invention provides a radio frequency shielding device for a plasma processing reaction chamber, which can better perform radio frequency shielding, and is convenient to install/disassemble to save space for the reaction chamber. . A first aspect of the present invention provides a radio frequency shielding device for plasma processing a reaction chamber, the plasma processing reaction chamber including a reaction chamber housing having a cavity disposed thereon, wherein the A radio frequency shielding device is disposed on the reaction chamber housing and at least partially covers the cavity, and the radio frequency shielding device is made of a conductive elastomer material. Wherein, the reaction chamber shell comprises a top of the reaction chamber, a side wall of the reaction chamber, and a bottom portion of the reaction chamber. Further, the plasma processing reaction chamber further includes a reaction chamber internal component extending from the inside of the reaction chamber housing to the outside through the cavity, and the RF shielding device at least partially covers the internal portion of the reaction chamber 100143519 Extending out the remaining void portion of the void 'form apostrophe A0101 Page 6 of 18 and is tightly bonded to the perimeter joint of the 1003460867-0 component within the reaction chamber. Preferably, the reaction chamber internal component is a cooling passage, and the reaction chamber housing includes a ground plate located at a lower portion of the reaction chamber, the cavity is disposed on the ground plate, and the cooling passage passes through the air The run extends out of the reaction chamber housing. Preferably, the radio frequency shielding device is disposed on the reaction chamber housing in any of the following manners: a button, a hook, a dry, and a ferrule. Further, the conductive elastomer material is a wonderful rubber in which Ag or A1 particles are embedded. Optionally, the plasma processing reaction chamber includes at least two cooling passages for respectively transferring coolant in a cooling device disposed outside the reaction chamber housing to the process sheet support table to support the process sheet support table A first cooling passage in which the temperature of the process sheet placed above is adjusted and a coolant for extending the process sheet support table out of the process sheet support table and transmitted to the cooling device. Optionally, the plasma processing reaction chamber includes four cooling passages for respectively transferring coolant in a cooling device disposed outside the reaction chamber housing to the processing sheet support table to support the processing sheet above the support table. a first cooling passage, a cooling passage, and a coolant for extending the coolant of the process sheet support table out of the process sheet support table and transmitted to the cooling device a cooling channel and a fourth cooling channel, wherein the 'the cooling channel and the second cooling channel are used for temperature control of a central region of the process piece, and the third cooling channel and the fourth cooling channel are used for The edge area of the process piece is temperature controlled. Optionally, the reaction chamber internals include a sensor light tube or cylinder. Form No. A0101 Page 7 of 18 201241867 Air tube. A second aspect of the invention also provides a plasma processing reaction chamber' characterized in that the plasma processing reaction chamber comprises a radio frequency shielding device provided by the first aspect of the invention. [Embodiment] The present invention will be specifically described below with reference to the accompanying drawings. Hereinafter, the present invention will be described in connection with a plasma etching reaction chamber, but it should be understood that 'the present invention is not limited to this'. The plasma processing reaction chamber to which the present invention is applicable includes, but is not limited to, plasma residual reaction chamber/plasma chemical gas. Phase deposition reaction chamber / plasma physical vapor deposition reaction chamber / plasma metal organic chemical vapor deposition reaction chamber. A first aspect of the present invention provides a radio frequency shielding device for plasma processing a reaction chamber, the plasma processing reaction chamber including at least one reaction chamber housing having a cavity disposed therein a radio frequency shielding device disposed on the reaction chamber housing and at least partially covering the cavity, the radio frequency shielding device being further made of a conductive elastomer material, the reaction chamber housing including a reaction chamber top, a reaction chamber sidewall, The bottom of the reaction chamber. In accordance with a preferred embodiment of the present invention, the plasma processing reaction chamber further includes a plurality of reaction chamber internal components that extend from the interior of the reaction chamber housing out of the reaction chamber housing through the voids, The RF shielding device at least partially covers the remaining void portion of the cavity extending from the interior of the reaction chamber and is intimately coupled to the peripheral junction of the internal components of the reaction chamber. Preferably, the reaction chamber internal component includes a cooling passage, wherein the reaction chamber housing includes a grounding plate located at a lower portion of the reaction chamber 100143519, Form No. A0101, Page 8 of 18, 201241867, The cavity is disposed on the ground plate, and the cooling channel extends through the cavity to the outer cavity of the reaction chamber housing.
第3圖是根據本發明的一個具體實施例的一種用於等離子 體處理反應腔的射頻屏蔽裝置裝置的主視圖，如第3圖所 示，等離子體處理反應腔200特別地為一個等離子體刻蝕 反應腔，其用於對工藝片（典型地為一矽片）進行刻蝕 製程處理，其中，所述等離子體處理反應腔200包括一個 反應腔殼體，其由反應腔頂部200a、兩個反應腔側壁 200b以及反應腔底部200c圍成，所述矽片設置於工藝片 支撙台202上。所述工藝片支撐台中設置有兩個冷卻通路 ，分別為第一冷卻通路204a和第二冷卻通路204b，其分 別連接於位於反應腔殼體外部的冷卻裝置（未示出）， 所述冷卻裝置是供應和處理冷卻劑的場所。具體地，所 述第一冷卻通道2〇4a用於將冷卻裝置中冷卻劑傳輸至工 藝片支撐台202中以對其上方放置的矽片溫度進行調節，3 is a front elevational view of a radio frequency shielding device for plasma processing a reaction chamber, as shown in FIG. 3, the plasma processing reaction chamber 200 is specifically a plasma engraved, in accordance with an embodiment of the present invention. An etch reaction chamber for performing an etching process on a process piece (typically a ruthenium), wherein the plasma processing reaction chamber 200 includes a reaction chamber housing, which is composed of a top portion of the reaction chamber 200a, two The reaction chamber sidewall 200b and the reaction chamber bottom portion 200c are enclosed, and the rafter is disposed on the process sheet support platform 202. The process sheet support table is provided with two cooling passages, respectively a first cooling passage 204a and a second cooling passage 204b, which are respectively connected to a cooling device (not shown) located outside the reaction chamber housing, the cooling device It is a place to supply and handle coolant. Specifically, the first cooling passage 2〇4a is used to transfer the coolant in the cooling device to the process sheet support table 202 to adjust the temperature of the cymbal placed above it.
相應地，所述第二冷卻通道2a4b則用於將所述工藝片支 撐台202中的冷卻劑延伸出所述工藝片支撐台並傳輸至冷 卻裝置，如此來完成冷卻劑的迴圈使用。 如第3圖所示，所述等離子體處理反應腔2〇〇的反應腔殼 體還包括一接地板203，其上設置有空洞201 ’用於使得 所述第一冷卻通道204a和第二冷卻通道204b從所述反應 腔殼體内部延伸出所述等離子體處理反應腔200。參照第 3圖，為了防止由介面帶來的射頻戈漏問題’本發明在接 地板203的下方設置一個射頻屏蔽裝置205 ’其至少部分 100143519 覆蓋所述第一冷卻通道204&和第二冷卻通道204b延伸出 表尊编號A0101 第9頁/共18頁 1003460867-0 201241867 所述空洞201的剩餘空隙部分，並與所述第一冷卻通道 204a和第—冷卻通道2〇4b的週邊結合處緊密結合優選 地，射頻屏蔽裝置205需完全覆蓋所述第一冷卻通道2〇切 和第一冷部通道2〇4b延伸出所述空洞2〇 1的剩餘空隙部分 需要說明的是，隨著溫度控制均勻性和準確性提出了越 來越南的要求’需要在工藝片下設置兩個環形的冷卻通 路’即工藝片雙區域溫度控制或雙冷卻通路（dual channel )。因此，雖然在上述實施例中，僅示出了包括 第一冷卻通道和第二冷卻通道的情形，但是本發明不限 於此’進一步地’本發明還包括應用於雙區域溫度控制 或雙冷卻通路的射頻屏蔽機制，具體地，可包括兩個用 於將冷卻裝置中冷卻劑傳輸至工藝片支撐台202中的冷卻 通道和兩個用於將所述工藝片支撐台中的冷卻劑延伸出 所述工藝片支撐台並傳輸至冷卻裝置的冷卻通道。 第4圖是根據本發明的—個具體實施例的用於等離子體處 理反應腔的雙冷卻通路模式射頻屏蔽裝置的仰視圖。如 第4圖所示，在本實施例中，等離子體處理反應腔21〇是 雙冷卻通路模式，即包括四個冷卻通道，分別為第—冷 卻通道214a、第二冷卻通道214b、第三冷卻通道2l4e、 第四冷卻通道214de其中，所述第一冷卻通道2i4a和第 三冷卻通道214c用於將冷卻裝置中冷卻劑傳輸至工蓺片 支撐台中以對其上方放置的矽片溫度進行調節，相應地 ，所述第二冷卻通道214b和第四冷卻通道2l4d則用於將 所述工藝片支撐台中的冷卻劑延伸出所述工藝片支撐a 並傳輸至冷卻裝置，所述第一冷卻通道214a和第二A：g 100143519 表單编號A0101 第10頁/共丨8頁 1〇〇346〇867~〇 201241867 通道214b可示例性地用於石夕片中央區域的溫度控制，相 應地’所述第三冷卻通道214c和第四冷卻通道214d可示 例性地用於矽片邊緣區域的溫度控制。Correspondingly, the second cooling passage 2a4b is used to extend the coolant in the process sheet support 202 out of the process sheet support table and to the cooling device, thus completing the use of the coolant. As shown in FIG. 3, the reaction chamber housing of the plasma processing reaction chamber 2A further includes a grounding plate 203 on which a cavity 201' is provided for making the first cooling passage 204a and the second cooling A channel 204b extends from the interior of the reaction chamber housing to the plasma processing reaction chamber 200. Referring to FIG. 3, in order to prevent the problem of radio frequency leakage caused by the interface, the present invention provides a radio frequency shielding device 205' below the grounding plate 203, at least a portion of which is covered by the first cooling channel 204& and the second cooling channel. 204b extends the remaining gap portion of the cavity 201, and is closely coupled to the periphery of the first cooling passage 204a and the first cooling passage 2〇4b, by the surface number A0101, page 9 of 18, 1003460867-0, 201241867. Preferably, the radio frequency shielding device 205 needs to completely cover the first cooling channel 2 and the first cold portion channel 2〇4b extends out of the remaining space of the cavity 2〇1. Uniformity and accuracy raises the growing need for 'requires two annular cooling passages under the process sheet' – either the process zone dual zone temperature control or the dual cooling channel. Therefore, although in the above embodiment, only the case including the first cooling passage and the second cooling passage is shown, the present invention is not limited thereto. 'Further' the present invention also includes application to the dual zone temperature control or the dual cooling passage. RF shielding mechanism, in particular, may include two cooling channels for transferring coolant in the cooling device to the process sheet support table 202 and two for extending the coolant in the process sheet support table out of the The process sheet supports the table and transmits it to the cooling passage of the cooling device. Figure 4 is a bottom plan view of a dual cooling path mode RF shielding device for plasma processing a reaction chamber in accordance with an embodiment of the present invention. As shown in FIG. 4, in the present embodiment, the plasma processing reaction chamber 21A is a dual cooling passage mode, that is, includes four cooling passages, respectively, a first cooling passage 214a, a second cooling passage 214b, and a third cooling. a channel 2l4e, a fourth cooling channel 214de, wherein the first cooling channel 2i4a and the third cooling channel 214c are used to transfer coolant in the cooling device to the work piece support table to adjust the temperature of the blade placed above it Correspondingly, the second cooling passage 214b and the fourth cooling passage 214d are used to extend the coolant in the process sheet support table out of the process sheet support a and to the cooling device, the first cooling passage 214a And the second A: g 100143519 Form No. A0101 Page 10 / A total of 8 pages 1 〇〇 〇 〇 〇 〇 41 41 41 41 41 41 41 41 41 41 41 41 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 The third cooling passage 214c and the fourth cooling passage 214d can be exemplarily used for temperature control of the edge region of the cymbal.
進一步地，上述等離子體處理反應腔210還包括一個射頻 屏蔽裝置215，其是一體成型的彈性導電材料製成的片狀 結構。由於彈性導電材料具有一定彈性，且敏密，可延 展性佳’即使是在雙冷卻通路模式下並且一體成型也能 夠和所述第一冷卻通道214a、第二冷卻通道214b、第三 冷卻通道214c和第四冷卻通道214d的週邊接合處緊密結 合’能夠較好地屏蔽射頻電磁場。並且’本發明通過在 接地板上設置出一個可容納所有所述第一冷卻通道214a 、第二冷卻通道214b、第三冷卻通道214c和第四冷卻通 道214d的空洞211來將上述冷卻通道從反應腔殼體内部延 伸出所述反應腔殼體，所述射頻屏蔽裝置21 5至少部分覆 蓋所述所述第一冷卻通道214a、第二冷卻通道214b、第 三冷卻通道214c和第四冷卻通道214d延伸出所述空洞 211的剩餘空隙部分。優選地，所述射頻屏蔽裝置215需 完全覆蓋所述所述第一冷卻通道214a、第二冷卻通道 214b、第三冷卻通道214c和第四冷卻通道214d延伸出所 述空洞211的剩餘空隙部分。 優選地，所述射頻屏蔽裝置在空間上呈片狀結構。 進一步地，所述射頻屏蔽裝置215的平面橫切面積需至少 大於所述第一冷卻通道214a、所述第二冷卻通道214b、 所述第三冷卻通道214c和所述第四冷卻通道214d延伸出 所述空洞211的剩餘空隙部分的平面面積。優選地’例如 ，當所述空洞面積的取值範圍為3〇cm2~80 cm2時’所述 100143519 表單编號A0101 第11頁/共18頁 1003460867-0 201241867 :頻屏敗裝置的面積為50 craM〇〇cm2。 取㈣=蔽裝置具有一定厚度，其厚度的 取值範圍為大於〇.5_。 進一步土也 、 ，所述射頻屏蔽裝置205採用按鈕、掛鈎、粘合 卡套或者其他類似的裝置和方法來固定在反應腔殼體 的接地板2〇3 , 士妖 田於不採用現有技術利用螺絲的固定方式 人員不再需要彎身於反應腔殼體下面來進行安裝/ 拆卸工作’廷更加說明了本發明的優越性。 此外’由於本發明的射頻屏蔽裝置的厚度很小，整體上 呈片狀、结構’相比較於現有技術的射頻屏蔽裝置體積更 J佔用反應腔空間大大降低。例如，現有技術提供的 金屬銘製成的射頻屏蔽裝置的體積大概為700cm3，而採 用本發明提供的導電彈性體材料製成的射頻屏蔽裝置的 體積僅有大約2. 75 cm3。 需要說明的是，關於射頻屏蔽裝置以何種方式設置於接 地板上並不限於上述方式，本發明應涵蓋現有技術中所 有能夠將所述射頻屏蔽裝置設置於接地板上的各種方式 ’其具體内容在現有技術中應已有成熟的技術支援，為 簡明起見’此處不再贅述。 優選地’所述導電彈性體材料為矽橡膠，所述矽橡膠中 嵌入Ag或者A1顆粒。 經過測試，本發明的射頻屏蔽裝置能夠達到比傳統金屬 射頻屏蔽裝置更好的屏蔽效率，應用了本發明的射頻屏 蔽裝置後，射頻洩露從151v/m降到了 16v/m。 需要說明的是，上文雖然僅結合冷卻通道對本發明進行 描述，但本領域技術人員需要理解，在等離子體處理反 100143519 表單編號A0101 第12頁/共18頁 1003460867-0 201241867 應腔中，所有由於在反應腔殼體内延伸出部件而產生的 介面而導致的射頻洩露問題，都可以應用本發明提供的 射頻屏蔽裝置，例如感測器光線管或氣缸氣管等。 本發明第二方面還提供了一種等離子體處理反應腔，所 述等離子體處理反應腔包括上述本發明第一方面提供的 射頻屏蔽裝置。Further, the plasma processing reaction chamber 210 further includes a radio frequency shielding device 215 which is a sheet-like structure made of an integrally formed elastic conductive material. Since the elastic conductive material has certain elasticity and is dense, the ductility is good, and even in the double cooling passage mode and integrally formed, the first cooling passage 214a, the second cooling passage 214b, and the third cooling passage 214c can be combined with the first cooling passage 214a, the second cooling passage 214b, and the third cooling passage 214c. The tight junction with the peripheral junction of the fourth cooling passage 214d can better shield the radio frequency electromagnetic field. And the present invention passes the cooling passage from the reaction by providing a cavity 211 on the ground plate that can accommodate all of the first cooling passage 214a, the second cooling passage 214b, the third cooling passage 214c, and the fourth cooling passage 214d. The reaction chamber housing extends inside the chamber housing, and the RF shielding device 21 5 at least partially covers the first cooling passage 214a, the second cooling passage 214b, the third cooling passage 214c, and the fourth cooling passage 214d. The remaining void portion of the cavity 211 extends. Preferably, the radio frequency shielding device 215 needs to completely cover the first cooling channel 214a, the second cooling channel 214b, the third cooling channel 214c, and the fourth cooling channel 214d to extend out of the remaining gap portion of the cavity 211. Preferably, the radio frequency shielding device is spatially in a sheet-like structure. Further, the plane cross-sectional area of the radio frequency shielding device 215 needs to be at least larger than the first cooling channel 214a, the second cooling channel 214b, the third cooling channel 214c, and the fourth cooling channel 214d. The planar area of the remaining void portion of the cavity 211. Preferably, for example, when the cavity area ranges from 3〇cm2 to 80cm2, the 100143519 form number A0101 page 11/18 pages 1003460867-0 201241867: the area of the frequency screen device is 50. craM〇〇cm2. The (four) = masking device has a certain thickness, and the thickness thereof has a value ranging from 〇.5_. Further, the radio frequency shielding device 205 is fixed to the grounding plate 2〇3 of the reaction chamber housing by buttons, hooks, adhesive ferrules or the like, and is used in the prior art without using the prior art. The screw fixing method no longer needs to be bent under the reaction chamber housing for mounting/dismounting work. The advantages of the present invention are further illustrated. In addition, since the thickness of the radio frequency shielding device of the present invention is small, the overall sheet shape and structure are much smaller than that of the prior art radio frequency shielding device. For example, the radio frequency shielding device made of the metal of the prior art has a volume of about 700 cm3, and the radio frequency shielding device made of the electrically conductive elastomer material provided by the present invention has a volume of only about 2.75 cm3. It should be noted that the manner in which the radio frequency shielding device is disposed on the grounding plate is not limited to the above manner, and the present invention should cover various methods in the prior art that can set the radio frequency shielding device on the grounding plate. The content should have mature technical support in the prior art, and for the sake of brevity, 'will not go into details here. Preferably, the electrically conductive elastomer material is a ruthenium rubber in which Ag or Al particles are embedded. After testing, the radio frequency shielding device of the present invention can achieve better shielding efficiency than the conventional metal radio frequency shielding device. After applying the radio frequency shielding device of the present invention, the radio frequency leakage is reduced from 151 v/m to 16 v/m. It should be noted that although the present invention has been described above only in connection with the cooling channel, those skilled in the art need to understand that in the plasma processing inverse 100143519, the form number A0101, the 12th page, the total 18 pages, the 1003460867-0201241867 cavity, all The radio frequency shielding device provided by the present invention, such as a sensor light pipe or a cylinder air pipe, can be applied due to radio frequency leakage caused by an interface formed by extending a component in a reaction chamber housing. A second aspect of the present invention also provides a plasma processing reaction chamber comprising the above-described radio frequency shielding device provided by the first aspect of the present invention.
[0005] 100143519 本發明第三方面還提供了一種用於等離子體處理反應腔 的射頻屏蔽方法，所述等離子體處理反應腔包括至少一 個反應腔殼體，所述反應腔殼體上設置有空洞，其特徵 在於，所述方法包括： 提供一種本發明第一方面所提供的射頻屏蔽裝置； 用所述射頻屏蔽裝置至少部分覆蓋所述空洞， 其中，所述射頻屏蔽裝置採用導電彈性體材料製成。 儘管本發明的内容已經通過上述優選實施例作了詳細介 紹，但應當認識到上述的描述不應被認為是對本發明的 限制。在本領域技術人員閱讀了上述内容後，對於本發 明的多種修改和替代都將是顯而易見的。因此，本發明 的保護範圍應由所附的申請專利範圍來限定。 【圖式簡單說明】 第1圖是現有技術的用於等離子體處理反應腔的射頻屏蔽 裝置的主視圖； 第2圖是現有技術的用於等離子體處理反應腔的射頻屏蔽 裝置的仰視圖； 第3圖是根據本發明的一個具體實施例的用於等離子體處 理反應腔的射頻屏蔽裝置的主視圖； 第4圖是根據本發明的一個具體實施例的用於等離子體處 表單編號A0101 第13頁/共18頁 1003460867-0 201241867 理反應腔的雙冷卻通路模式射頻屏蔽裝置的仰視圖 【主要元件符號說明】 [0006] 100、200、210 等離子體處理反應腔 101 ' 201、211 空洞 102 ' 202 工藝片支撐台 103 ' 203 接地板 1 04a 、204a、214a 第一冷卻通路 104b 、204b、214b 第二冷卻通路 105 > 205、215 射頻屏蔽裝置 105a 第一射頻屏蔽裝置 105b 第二射頻屏蔽裝置 105, 中切線 200a 反應腔頂部 200b 反應腔側壁 200c 反應腔底部 100143519 表單編號A0101 第14頁/共18頁 1003460867-0[0005] 100143519 A third aspect of the present invention provides a radio frequency shielding method for a plasma processing reaction chamber, the plasma processing reaction chamber including at least one reaction chamber housing having a cavity provided therein The method includes: providing a radio frequency shielding device according to the first aspect of the present invention; at least partially covering the cavity with the radio frequency shielding device, wherein the radio frequency shielding device is made of a conductive elastomer material to make. Although the present invention has been described in detail by the preferred embodiments thereof, it should be understood that the foregoing description should not be construed as limiting. Various modifications and alterations of the present invention will be apparent to those skilled in the art. Therefore, the scope of the invention should be limited by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a front view of a prior art RF shielding device for a plasma processing reaction chamber; FIG. 2 is a bottom view of a prior art RF shielding device for a plasma processing reaction chamber; Figure 3 is a front elevational view of a radio frequency shielding apparatus for a plasma processing reaction chamber in accordance with an embodiment of the present invention; and Figure 4 is a drawing of a plasma portion number A0101 in accordance with an embodiment of the present invention. 13 pages/total 18 pages 1003460867-0 201241867 Double cooling path mode of the reaction chamber. Bottom view of the RF shielding device [Main component symbol description] [0006] 100, 200, 210 Plasma processing reaction chamber 101 '201, 211 cavity 102 '202 process sheet support table 103' 203 ground plate 1 04a, 204a, 214a first cooling passage 104b, 204b, 214b second cooling passage 105 > 205, 215 radio frequency shielding device 105a first radio frequency shielding device 105b second radio frequency shielding Device 105, center tangent 200a reaction chamber top 200b reaction chamber side wall 200c reaction chamber bottom 100143519 Form No. A0101 Page 14 / Total 18 pages 1003460867-0