TW201240137A - Method for making an epitaxial structure - Google Patents

Abstract

The invention relates to a method for making an epitaxial structure. The method includes the following steps: providing a substrate having an epitaxial growth surface; placing a carbon nanotube layer on the epitaxial growth surface; epitaxially growing an epitaxial layer on the epitaxial growth surface; removing the carbon nanotube layer. The method is simple, low-cost and free for contamination.

Description

201240137 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a method of preparing an epitaxial structure. [Prior Art] [0002] An epitaxial structure, particularly a heteroepitaxial structure, is one of main materials for fabricating a semiconductor device. For example, in recent years, GaN epitaxial wafers for preparing light-emitting diodes (LEDs) have become a research hotspot. [0003] The gallium nitride epitaxial structure system refers to that the gallium nitride material molecules are regularly arranged and oriented on a sapphire substrate under certain conditions. When the gallium nitride epitaxial structure is applied to the light emitting diode, in order to improve the light extraction rate of the light emitting diode, a microstructure is usually disposed in the gallium nitride epitaxial structure to improve the light emission of the gallium nitride epitaxial structure. rate. [0004] However, the prior art generally forms a trench on the surface of the sapphire substrate by a microelectronic method such as photolithography to form a non-planar epitaxial growth face to form a microstructure. This method is not only complicated, but also costly, and it will pollute the epitaxial growth surface of the sapphire substrate, thus affecting the quality of the epitaxial structure. SUMMARY OF THE INVENTION [0005] In summary, it is necessary to provide a method for preparing a structure which is simple in method, low in cost, and does not cause contamination on the surface of the substrate. [0006] A method for preparing an epitaxial structure, comprising the steps of: providing a substrate having a support epitaxial layer growth extension surface; and providing a carbon nanotube layer on the epitaxial growth surface of the substrate Forming an epitaxial layer on the epitaxial growth surface of the substrate to form a primary epitaxial structure; removing the carbon nanotube layer in the primary epitaxial structure. 100112852 Form No. A0101 Page 3 of 45 1002021412-0 201240137 [0007] Compared with the prior art, the present invention provides a simple and low-cost preparation method for the extended structure, which greatly reduces the preparation cost of the epitaxial structure. Reduced pollution to the environment. Further, by removing the carbon nanotube layer to have a microstructure in the epitaxial structure, the light-emitting rate of the epitaxial structure is improved, so that the epitaxial structure has a wide range of uses. [0008] Referring to FIG. 1 , an embodiment of the present invention provides a method for fabricating an epitaxial structure 10, which specifically includes the following steps: [0009] S10: providing a substrate 100 having a supporting epitaxial layer 104: growing the outer growth surface 101; [0010] S20: providing a carbon nanotube layer 102 on the outer growth surface 101 of the substrate 100; [0011] S30: growing the epitaxial layer 104 on the growth surface 101 of the substrate 100 A primary epitaxial structure 108; [0012] S40: removing the carbon nanotube layer 102 in the primary epitaxial structure 108.

[0013] In step S10, the substrate 100 provides an epitaxial growth surface 101 of the epitaxial layer 104. The outer surface 101 of the substrate 100 is a smooth surface of the molecule, and impurities such as oxygen or carbon are removed. The substrate 100 can be a single layer or a complex structure. When the substrate 100 has a single layer structure, the substrate 100 may be a single crystal structure and have a crystal plane as the epitaxial layer 104. The material of the single-layer structure substrate 100 may be GaAs, GaN, Si ' SO I (s i1i con on insulator) ' AIN ' SiC 'MgO, ZnO, LiGa09, LiAlOgiAlgOq, or the like. When the substrate 100 has a complex structure, it needs to include at least one layer of the above single crystal structure 100112852, Form No. A0101, Page 4 / Total 45, 1002021412-0 201240137, and the δ-Heil crystal structure has a crystal plane as an epitaxial layer. Epitaxial growth surface 01. The material of the substrate 100 may be selected according to the epitaxial layer 1 〇 4 to be grown. Preferably, the substrate 1 〇〇 has a lattice constant and a coefficient of thermal expansion similar to those of the epitaxial layer 104. The thickness, size and shape of the substrate are not limited and can be selected according to actual needs. The substrate 1 is not limited to the materials listed above, as long as the substrate 1 having the epitaxial growth surface 101 supporting the growth of the epitaxial layer 104 is within the scope of the present invention. [0015] In the dream S20, the carbon nanotube layer 102 is a continuous unitary structure including a plurality of carbon nanotubes. The carbon nanotube layer 1〇2 is a self-supporting structure, and the carbon nanotube layer 1〇2 is directly laid on the epitaxial growth surface 101 of the substrate 1 and is placed in contact with the substrate 100. ❹ The carbon nanotube layer is a continuous overall structure. The plurality of carbon nanotubes in the carbon nanotube layer 102 extend in a direction substantially parallel to the surface of the carbon nanotube layer ι2. When the carbon nanotube layer 102 is disposed on the epitaxial growth surface 101 of the substrate 1 , the extending direction of the plurality of carbon nanotubes in the carbon nanotube layer 102 is substantially parallel to the epitaxy of the substrate 100 Growth surface 101. The carbon nanotube layer 102 has a thickness of from nanometer to 100 micrometers, or from 1 nanometer to 1 micrometer, or from 1 nanometer to 200 nanometers, preferably from 1 nanometer to 100 nanometers. The carbon nanotube layer 1〇2 is a patterned carbon nanotube layer 102. The “patterned” means that the carbon nanotube layer 102 has a plurality of openings 105 penetrating the carbon nanotube layer 1 from the thickness direction of the carbon nanotube layer 1〇2. 〇2 ^ when the carbon nanotube layer 1〇2 covers the epitaxial growth surface IQ of the substrate 10〇, thereby exposing the portion of the epitaxial growth surface 101 of the substrate 10 corresponding to the opening 105 In order to facilitate the growth of the epitaxial layer 104. The opening 1〇5 may be a micro hole or a gap. The 100112852 Form No. 1010101 Page 5 / Total 45 Page 1002021412-0 201240137 The size of the opening 105 is 1 〇 奈 〜 〜 5 〇〇 micron 'the size refers to the aperture of the micro hole or the width direction of the gap spacing. The opening 105 has a size of 1 G nm to 3 GG μm, or 1 G nm to 12 Gm, or 10 nm to 8 μm, or 10 nm. The smaller the size of the opening 105, the smaller the generation of the dislocation defect during the growth of the epitaxial layer 1 〇 4 to obtain a high quality epitaxial layer 1 〇 4 . Preferably, the size of the opening 1〇5 is from 1 nanometer to ι micrometer. Further, the duty ratio of the carbon nanotube layer 1〇2 is 1:100~100: Bu or 1:10~10: Bu or 1:2~2:1, or 1:4~4:1 . Preferably, the duty ratio is 1:4~4:; The so-called "duty ratio" means that the carbon nanotube layer 1〇2 is disposed on the epitaxial growth surface 101 of the substrate 1〇〇, and the epitaxial growth surface The area ratio of the portion occupied by the carbon nanotube layer 1〇2 to the portion exposed through the opening 105. [0016] The above-mentioned "patterning" means that the arrangement of the plurality of carbon nanotubes in the carbon nanotube layer 1〇2 is ordered and regular. For example, the nai The axial direction of the plurality of carbon nanotubes in the carbon nanotube layer 102 is substantially parallel to the epitaxial growth surface 101 of the substrate 100 and extends substantially in the same direction. Alternatively, the plurality of carbon nanotubes in the carbon nanotube layer 102 The axial direction may extend substantially in two or more directions. Or, the axial direction of the plurality of carbon nanotubes in the carbon nanotube layer 1〇2 extends along a crystal orientation of the substrate 丨00 or with the substrate 100. A crystal orientation extends at an angle. Adjacent carbon nanotubes extending in the same direction in the above carbon nanotube layer 1〇2 are connected end to end by a van der Waals force. Under the premise that the carbon nanotube layer 1〇2 has the opening 1〇5 as described above, the plurality of carbon nanotubes in the carbon nanotube layer 102 may also be disorderly arranged, without 100112852 Form No. A0101 No. 6 Page / Total 45 pages 1002021412-0 201240137 Regular arrangement. [0018] The carbon nanotube shaft is disposed on the entire base of the substrate The carbon nanotubes in the nano-carbon nanotube layer 102 of the long surface 101 can be one or a plurality of tubes, double-walled nano-tubes, and the length and diameter can be selected according to requirements. [0019] The non-carbon & layer 102 is used as a mask for growing the epitaxial layer iQ4. The so-called "mask" means that the carbon nanotube layer m is used to block partial epitaxial growth of the substrate (10). The surface 1G is exposed and a part of the epitaxial growth surface iqi is exposed, so that the epitaxial layer grows as a part of (4). Since the carbon nanotube layer 102 has a plurality of openings 1〇5, the nanometer is The carbon tube layer 102 forms a patterned mask. The #nano carbon tube layer (10) is disposed on the epitaxial growth surface 1G1 of the substrate 100, and the plurality of carbon nanotubes extend in a direction parallel to the epitaxial growth surface 101. The carbon nanotube layer 1〇2 forms a plurality of openings 1〇5 on the epitaxial growth surface 101 of the substrate 100 such that the epitaxial growth surface 101 of the substrate 100 has a patterned mask. Epitaxial growth by using the carbon nanotube layer 102 as a mask with respect to a microelectronic method such as photolithography The method is simple and low-cost, and it is difficult to introduce pollution on the growth surface 101 of the substrate 100, and the environmental protection can greatly reduce the preparation cost of the epitaxial structure 10. [0020] It can be understood that the substrate 100 and the carbon nanotube layer 102 collectively constitutes a substrate for growing epitaxial structures. The substrate can be used to grow epitaxial layers 104 of different materials, such as semiconductor epitaxial layers, metal epitaxial layers or alloy epitaxial layers. The substrate can also be used to grow homogenous or heteroepitaxial layers. The layer is such that a homoepitaxial structure or a heteroepitaxial structure is obtained. 100112852 Form No. Α0101 Page 7 of 45 1002021412-0 201240137 [0021] The carbon nanotube layer 1〇2 may be formed before being directly laid on the epitaxial growth surface 1〇1 of the substrate 100. The carbon nanotube layer 102 is a macrostructure, and the carbon nanotube layer 102 is a self-supporting structure. The so-called 'self-supporting' means that the carbon nanotube layer 102 does not need a large-area carrier support, and as long as the support force is provided on both sides, it can be suspended and maintained in its own state, that is, the nano-tube layer 1 0 2 When placed on (or fixed to) two supports spaced apart by a certain distance, the carbon nanotube layer 102 between the two supports can be suspended to maintain its own state. Since the carbon nanotube layer 1〇2 is a self-supporting structure, the carbon nanotube layer 102 does not have to be formed on the epitaxial growth surface 101 of the substrate 100 by a complicated chemical method. Further preferably, the carbon nanotube layer 102 is a pure carbon nanotube structure composed of a plurality of carbon nanotubes. By "pure carbon nanotube structure" is meant that the carbon nanotube layer 102 does not require any chemical modification or acidification during the entire preparation process and does not contain any functional groups such as carboxyl groups. [0022] The carbon nanotube layer 1〇2 may also be a composite structure including a plurality of carbon nanotubes and an additive material. The additive material includes one or a plurality of graphite, graphene, tantalum carbide, boron nitride, tantalum nitride, hafnium oxide, amorphous carbon, and the like. The additive material may further include one or a plurality of metal carbides, metal oxides, metal nitrides, and the like. The additive material is coated in at least a portion of the surface of the nanotube layer 102 or disposed within the opening 105 of the carbon nanotube layer 102. Preferably, the additive material is coated on the surface of the carbon nanotube. Since the additive material is coated on the surface of the carbon nanotube, the diameter of the naphthalene tube is large, so that the opening 105 between the naphthalene tubes is reduced. The additive material may be subjected to chemical vapor deposition (CVD), physical vapor deposition (PVD), controlled emission, etc. 100112852 Form No. A0101 Page 8 of 45 '1002021412-0 201240137 [0023] Ο [0024] [0025]

Formed on the surface of the carbon nanotubes. Laying the carbon nanotube layer 102 on the epitaxial growth surface 110 of the substrate 100 may further include an organic solvent treatment step to more closely bond the carbon nanotube layer 102 to the epitaxial growth surface 101. The organic solvent may be selected from a mixture of one or more of ethanol, methanol, acetone, dichloroethane and chloroform. The organic solvent in this embodiment employs ethanol. The step of treating with an organic solvent may immerse the organic solvent on the surface of the carbon nanotube layer 102 through a test tube to infiltrate the entire carbon nanotube layer 102 or immerse the substrate 100 and the entire carbon nanotube layer 102 in an organic solvent. Infiltrated in the container. The carbon nanotube layer 102 may also be directly grown on the epitaxial growth surface 101 of the substrate 100 or on the surface of the ruthenium substrate by chemical vapor deposition (CVD) or the like, and then transferred to the epitaxial surface of the substrate 100. Growth Surface 101 Specifically, the carbon nanotube layer 102 may include a carbon nanotube membrane or a nanocarbon pipeline. The carbon nanotube layer 102 can be a single layer of carbon nanotube film or a plurality of stacked carbon nanotube films. The carbon nanotube layer 102 can include a plurality of nanocarbon lines that are parallel to each other and spaced apart. The carbon nanotube layer 102 may also include a plurality of carbon nanotube lines that are interdigitated to form a network structure. When the carbon nanotube layer 102 is a plurality of carbon nanotube films, the number of layers of the carbon nanotube film is not too high, and preferably, it is 2 to 100 layers. When the carbon nanotube layer 102 is a plurality of carbon nanotubes arranged in parallel, the distance between the adjacent two carbon nanotubes is from 0.1 μm to 200 μm, preferably from 10 μm to 100 μm. The space between the adjacent two nanocarbon lines constitutes an opening 105 of the carbon nanotube layer 102. The length of the gap between adjacent two nanocarbon lines may be equal to the length of the nanocarbon line. The carbon nanotubes 100112852 Form No. Α0101 Page 9 of 45 1002021412-0 201240137 A membrane or nanocarbon line can be directly laid on the epitaxial growth surface 101 of the substrate 100 to form the carbon nanotube layer 102. The size of the opening 105 in the carbon nanotube layer 102 can be controlled by controlling the number of layers of the carbon nanotube film or the distance between the carbon nanotubes. The carbon nanotube film is a self-supporting structure composed of a plurality of carbon nanotubes. The plurality of carbon nanotubes extend in a preferred orientation along the same direction. The preferred orientation means that the majority of the carbon nanotubes in the carbon nanotube film extend substantially in the same direction. Moreover, the overall direction of extension of the majority of the carbon nanotubes is substantially parallel to the surface of the carbon nanotube film. Further, most of the carbon nanotubes in the carbon nanotube membrane are connected end to end by van der Waals force. Specifically, each of the plurality of carbon nanotubes extending substantially in the same direction in the carbon nanotube film is connected end to end with a vanadium force in the extending direction. Of course, there are a small number of randomly arranged carbon nanotubes in the carbon nanotube membrane, and these carbon nanotubes do not significantly affect the overall orientation of most of the carbon nanotubes in the carbon nanotube membrane. The self-supporting carbon nanotube film does not require a large-area carrier support, but can maintain a self-membrane state as long as the supporting force is provided on both sides, that is, the carbon nanotube film is placed (or fixed on) When the two supports are disposed at a certain distance apart, the carbon nanotube film located between the two supports can be suspended to maintain the self-membrane state. The self-supporting is mainly achieved by the presence of continuous carbon nanotubes extending through the van der Waals end-to-end extension in the carbon nanotube film. [0027] Specifically, a plurality of carbon nanotubes extending substantially in the same direction in the carbon nanotube film are not absolutely linear and may be appropriately bent; or are not completely aligned in the extending direction, and may be appropriately deviated Extend the direction. 100112852 Form No. A0101 Page 10 of 45 1002021412-0 201240137 Therefore, it is not possible to exclude partial contact between the carbon nanotubes juxtaposed in the majority of the carbon nanotube membranes extending in the same direction. . [0028] Ο

Referring to Figures 2 and 3, in particular, the carbon nanotube membrane comprises a plurality of continuous and oriented elongated carbon nanotube segments 143. The plurality of carbon nanotube segments 143 are connected end to end by van der Waals force. Each of the carbon nanotube segments 143 includes a plurality of carbon nanotubes 145 which are parallel to each other, and the plurality of mutually parallel carbon nanotubes 145 are tightly bonded by van der Waals force. The carbon nanotube segments 143 have any length, thickness, uniformity, and shape. The carbon nanotube film can be obtained by directly drawing a part of a carbon nanotube from an array of carbon nanotubes. The carbon nanotube film has a thickness of from 1 nm to 100 μm, and the width is related to the size of the carbon nanotube array in which the carbon nanotube film is taken out, and the length is not limited. There are micropores or gaps between adjacent carbon nanotubes in the carbon nanotube film to form an opening 105, and the pore size or gap of the micropore is less than 10 microns. Preferably, the carbon nanotube film has a thickness of from 100 nm to 10 μm. The carbon nanotubes 145 in the carbon nanotube film extend in a preferred orientation in the same direction. For the structure of the carbon nanotube film and the preparation method thereof, please refer to the patent application "Nano Carbon Tube Film Structure" of No. 1327177 published by Fan Shoushan et al. on July 12, 2007. And its preparation method", applicant: Hon Hai Precision Industry Co., Ltd. In order to save space, only this is cited, but all the technical disclosures of the above application are also considered as part of the disclosure of the technology of the present application. [0029] Referring to FIG. 4, when the carbon nanotube layer includes a plurality of stacked carbon nanotube films, the extending directions of the carbon nanotubes in the adjacent two carbon nanotube films form an intersection angle. α, and α is greater than or equal to 0 degrees and less than or equal to 90 degrees (0. a 90.). 100112852 Form No. A0101 Page 11 of 45 1002021412-0 201240137 [0030] To reduce the thickness of the carbon nanotube film, the carbon nanotube film can be further heat treated. In order to prevent the carbon nanotube film from being destroyed upon heating, the method of heating the carbon nanotube film employs a local heating method. Specifically, the method comprises the steps of: locally heating the carbon nanotube film, so that a part of the carbon nanotube film is oxidized at a local position; and moving the carbon nanotube to be locally heated, from the local to the whole Heating of the carbon nanotube film. Specifically, the carbon nanotube film can be divided into a plurality of small regions, and the carbon nanotube film is heated region by region in a partial to overall manner. There are several methods for locally heating the carbon nanotube film, such as laser heating, microwave heating, and the like. In this embodiment, the carbon nanotube film is irradiated by a laser scan having a power density greater than 0.1 lx 〇 4 watts/m 2 , and the carbon nanotube film is heated from a partial to a whole. The carbon nanotube film is irradiated by laser, and some of the carbon nanotubes are oxidized in the thickness direction, and at the same time, the larger diameter carbon nanotube bundle in the carbon nanotube film is removed, so that the carbon nanotube film becomes Thin enamel [0031] It can be understood that the above method of scanning the carbon nanotube film is not limited as long as the carbon nanotube film can be uniformly irradiated. The laser scanning can be carried out row by row along the arrangement direction of the carbon nanotubes in the parallel carbon nanotube film, or can be carried out column by column in the direction perpendicular to the arrangement of the carbon nanotubes in the carbon nanotube film. The lower the speed of the laser-scanned carbon nanotube film with fixed power and fixed wavelength, the more heat absorbed by the carbon nanotube bundle in the carbon nanotube film, the more the corresponding carbon nanotube bundle is destroyed, after laser treatment The thickness of the carbon nanotube film becomes small. However, if the laser scanning speed is too small, the carbon nanotube film will absorb too much heat and be burned. In this embodiment, the power density of the laser is 0. 053x1 ο12 watts/m2, and the diameter of the laser spot is 1 mm~5 milli100112852 Form No. A0101 Page 12/45 pages 1002021412-0 201240137 meters, laser scanning The irradiation time is less than 1.8 seconds. Preferably, the laser is a carbon dioxide laser having a power of 30 watts, a wavelength of 10.6 micrometers, a spot diameter of 3 mm, and a relative movement speed of the laser device 140 and the carbon nanotube film is less than 10 Mm/s. [0032] Ο

The nanocarbon line can be a non-twisted nanocarbon line or a twisted nanocarbon line. The non-twisted nanocarbon pipeline and the twisted nanocarbon pipeline are both self-supporting structures. Specifically, referring to Figure 5, the non-twisted nanocarbon pipeline includes a plurality of carbon nanotubes extending in a direction parallel to the length of the non-twisted nanocarbon pipeline. Specifically, the non-twisted nanocarbon pipeline includes a plurality of carbon nanotube segments, and the plurality of carbon nanotube segments are connected end to end by a van der Waals force, and each of the carbon nanotube segments includes a plurality of parallel and pass through a van der Waals force. Tightly bonded carbon nanotubes. The carbon nanotube segments have any length, thickness, uniformity, and shape. 5纳米至100微米。 The non-twisted nano carbon line length is not limited, the diameter is 0.5 nm ~ 100 microns. The non-twisted nano carbon line is obtained by treating the carbon nanotube membrane with an organic solvent. Specifically, the organic solvent is used to impregnate the entire surface of the carbon nanotube film, and the mutually parallel complex carbon nanotubes in the carbon nanotube film pass through the surface tension generated by the volatilization of the volatile organic solvent. The wattage is tightly combined to shrink the carbon nanotube membrane into a non-twisted nanocarbon pipeline. The organic solvent is a volatile organic solvent such as ethanol, decyl alcohol, acetone, dioxane or gas, and ethanol is used in this embodiment. The non-twisted nanocarbon line treated by the organic solvent has a smaller specific surface area and a lower viscosity than the carbon nanotube film which is not treated with the organic solvent. The twisted nanocarbon line is obtained by twisting both ends of the carbon nanotube film in opposite directions by a mechanical force. Referring to Figure 6, the twisted nano 100112852 Form No. A0101 Page 13 of 45 1002021412-0 [0033] The 201240137 carbon line includes a plurality of carbon nanotubes extending axially around the twisted nanocarbon line. Specifically, the twisted nanocarbon pipeline includes a plurality of carbon nanotube segments, and the plurality of carbon nanotube segments are connected end to end by van der Waals, and each of the carbon nanotube segments includes a plurality of parallel and through van der Waals Tightly bonded carbon nanotubes. The carbon nanotube segments have any length, thickness, uniformity, and shape. 5纳米〜100微米。 The twisted nano carbon line length is not limited, the diameter is 0. 5 nanometers ~ 100 microns. Further, the twisted nanocarbon line can be treated with a volatile organic solvent. Under the action of the surface tension generated by the volatilization of the volatile organic solvent, the adjacent carbon nanotubes in the treated twisted nanocarbon pipeline are tightly bonded by van der Waals to make the specific surface area of the twisted nanocarbon pipeline Decrease, increase in density and strength. [0034] The nano carbon pipeline and the preparation method thereof can be referred to the application of Fan Shoushan et al. on November 5, 2002, and the Taiwan Patent No. 1303239 announced on November 27, 2008, "a nano carbon tube rope and "Manufacturing method", Applicant: Hon Hai Precision Industry Co., Ltd., and the application of the Taiwan Patent No. 1 31 2337, which was filed on December 16, 2005, announced on July 21, 2009. "Applicant: Hon Hai Precision Industry Co., Ltd. In order to save space, only this is cited, but all the technical disclosures of the above application should also be considered as part of the technical disclosure of the present application. [0035] In step S30, the growth method of the epitaxial layer 104 can be performed by molecular beam epitaxy (MBE), chemical beam epitaxy (CBE), vacuum deuteration, low temperature epitaxy, selective epitaxy, liquid deposition epitaxy Method (LPE), metal organic vapor phase epitaxy (MOVPE), ultra-vacuum chemical vapor deposition (UHVCVD), hydride vapor phase epitaxy (HVPE), and metal organic chemical vapor deposition (MOCVD) One or a plurality of implementations. 100112852 Form No. A0101 Page 14 of 45 1002021412-0 201240137 The epitaxial layer m just described is a single crystal structure grown on the epitaxial growth surface 101 of the substrate ι by epitaxy. The thickness of the growth of the epitaxial layer 1〇4 can be prepared as needed. Specifically, the thickness of the epitaxial layer 1〇4 may be 5 m1 or less. For example, the thickness of the epitaxial layer may be from 100 nm to 500 μm, or from 2 nm to 200 μm or from 500 nm to 1 μm. The epitaxial layer 1 〇 4 may be a semiconductor epitaxial layer, and the material of the semiconductor epitaxial layer is GaMnAs, (10) 仏, (3), (10)

SiGe, InP, Si, AIN, GaN, GalnN, AlInN, GaAIN or AlGaInN. The epitaxial layer m may be a metal epitaxial layer, and the material of the gold germanium epitaxial layer is Syrian, Ming, copper or silver. The epitaxial layer 104 may be an alloy epitaxial layer, and the material of the epitaxial layer of the alloy is MnGa, c〇MnGa or Cc^MnGa. The material of the epitaxial layer 104 may be the same as or different from the material of the substrate. If the material of the epitaxial layer 1〇4 is the same as the material of the substrate 1〇〇, the epitaxial layer 104 is a homoepitaxial layer. If the material of the epitaxial layer 1〇4 is different from the material of the substrate 100, the epitaxial layer 1〇4 is a heteroepitaxial layer. ◎ Please refer to FIG. 7. Specifically, the growth process of the epitaxial layer 1〇4 specifically includes the following steps: [0038] S31: nucleating along an epitaxial growth surface 1〇1 substantially perpendicular to the substrate 1〇〇 And epitaxially growing to form a plurality of epitaxial grains 1 〇 42; [0039] S32: the plurality of epitaxial grains 104 2 are epitaxially grown along a direction substantially parallel to the epitaxial growth surface 101 of the substrate 1 — - a continuous epitaxial film 1044 [0040] S33: the epitaxial film 1044 is epitaxially grown along an epitaxial growth surface 101, which is substantially perpendicular to the substrate 1100, 100112852, Form No. A0101, Page 15/45, 1002021412-0 201240137, to form an epitaxial layer 104. . [0041] The plurality of epitaxial grains 1 〇 42 in the step S31 are grown at a portion of the epitaxial growth surface 101 of the substrate 1 through the opening 105 of the carbon nanotube layer 102 and the growth direction thereof is substantially vertical The epitaxial growth surface 101' of the substrate 1', that is, the plurality of epitaxial grains 1042 in this step is longitudinally epitaxially grown. In step S32, 'the plurality of epitaxial grains 1042 are substantially homogenously epitaxially grown and integrated in a direction substantially parallel to the epitaxial growth surface 101 of the substrate 100 by controlling growth conditions. The carbon nanotube layer 1〇2 cover. That is, in the step, the plurality of epitaxial grains 1042 are subjected to lateral epitaxial growth to directly close together and finally form a plurality of holes around the carbon nanotubes 1〇3 to surround the nanotubes: the plurality of holes 1〇3 may be Nano-scale microporous structure. Preferably, the nano-holes are disposed at an interval from the epitaxial layer of the carbon nanotubes surrounding the carbon nanotubes. The shape of the holes is related to the arrangement direction of the carbon nanotubes in the carbon nanotube layer 102. When the carbon nanotube layer 102 is a single-layer carbon nanotube film, the plurality of pores 1〇3 are connected to each other and distributed in the same plane. When the carbon nanotube layer 102 is a plurality of parallel carbon nanotubes disposed in parallel, the plurality of pores 1〇3 are substantially parallel grooves. When the nanotube layer 1〇2 is a plurality of nano carbon film or a complex Hx nanocarbon line, the plurality of holes 103 are intersecting groove nets & In step S33, due to the presence of the nanotube layer 1〇2, the lattice misalignment between the epitaxial grains 1042 and the substrate 100 stops growing during the formation of the continuous epitaxial film 1044. Therefore, the epitaxial layer 104 of this step is equivalent to homoepitaxial growth on the surface of the epitaxial thin film 1044 having no defects. The epitaxial layer 104 has fewer defects. The epitaxial layer 104 covers 100112852 Form No. A0101 Page 16 / 45 Ά 1002021412-0 201240137 The carbon nanotube layer 102 is disposed and penetrates the opening 105 of the carbon nanotube layer 102 and the epitaxial growth of the substrate 100 Face 101 is in contact. The structure composed of the substrate 100, the carbon nanotube layer 102, and the epitaxial layer 104 is defined as a primary epitaxial structure 108. [0044] In the first embodiment of the present invention, the substrate 1 is a sapphire (αι2〇3) substrate, and the carbon nanotube layer 102 is a single-layer carbon nanotube film. The single-layered carbon nanotube membrane is a self-supporting structure composed of a plurality of carbon nanotubes. In the single-layered carbon nanotube film, the majority of the carbon nanotubes extend substantially in the same direction. Each of the plurality of carbon nanotubes extending substantially in the same direction in the single-layered carbon nanotube film is connected end to end with a vanadium tube adjacent to each other in the extending direction. This embodiment employs an MOCVD method for epitaxial growth. Among them, the use of high purity ammonia (NHq) ό

As a source gas of nitrogen, hydrogen (Η2) is used as a carrier gas, and trimethylgallium (TMGa) or triethylgallium (TEGa), trimethylindium (TMIn), or trimethylaluminum (ΤΜΑ1) is used as a Ga source. , In source and Α1 source. Specifically, the following steps are included. First, the sapphire substrate 100 is placed in a reaction chamber, heated to 1100 ° C to 1200 ° C, and passed through H 2 , \ or a mixed gas thereof as a carrier gas, and baked at a high temperature for 200 seconds to 1 000 seconds. Secondly, continue to carry the same carrier gas, and cool down to 500 °C ~ 650 °C, pass through trimethylgallium or triethylgallium and ammonia, grow GaN low temperature buffer layer, the thickness of 10 nm ~ 50. Then, stop the introduction of trimethylgallium or triethylgallium, continue to pass ammonia and carrier gas, and raise the temperature to 1100 ° C ~ 1 200 ° C, and maintain the temperature for 30 seconds ~ 300 seconds, for annealing . Again, the temperature of the substrate 100 is maintained at 1 000 ° C ~ 1100 ° C, continue to enter the gas and carrier gas, while re-introduction of the triterpene or triethyl record, the lateral extension of GaN at high temperatures The growth process, and the growth of high quality 100112852 Form No. A0101 Page 17 / Total 45 pages 1002021412-0 201240137 amount of G a N epitaxial layer. After the growth of the primary epitaxial structure 1 0 8 was completed, the primary epitaxial structure 108 was observed and tested by a scanning electron microscope (SEM) and a transmission electron microscope (ΤΕΜ), respectively. In the first embodiment of the present invention, the material of the substrate 100 is sapphire, and the material of the epitaxial layer 104 is GaN, since the additional layer 104 is a heteroepitaxial layer. Referring to Figures 8 and 9, in the primary epitaxial structure 108 prepared in this embodiment, the heteroepitaxial layer grows only from the position where the epitaxial growth surface of the substrate has no carbon nanotube layer, and then is integrated. The surface of the heteroepitaxial layer in contact with the substrate forms a plurality of holes, and the carbon nanotube layer is disposed in the hole and spaced apart from the heteroepitaxial layer. Specifically, it is clear from Fig. 8 that the interface between the GaN heteroepitaxial layer and the sapphire substrate is seen, wherein the dark portion is a GaN heteroepitaxial layer and the light portion is a sapphire substrate. The surface of the GaN heteroepitaxial layer in contact with the sapphire substrate has a row of holes 103. As can be seen from Fig. 9, a carbon nanotube is disposed in each of the holes 103. The carbon nanotubes in the holes 103 are disposed on the surface of the sapphire substrate and spaced apart from the GaN heteroepitaxial layer forming the holes 103. [0045] In step S40, the carbon nanotube layer 102 may be removed by a plasma etching method, a laser heating method, or a heating furnace heating method, so that the carbon nanotubes in the carbon nanotube layer 102 are physically etched or removed. The carbon nanotubes are oxidized to form a gas which is removed. [0046] The method for removing the carbon nanotube layer 102 by plasma etching comprises the following steps: [0047] Step S412; placing the primary epitaxial structure 108 into a vacuum chamber; [0048] S4 1 4 ; a reaction gas is introduced into the vacuum chamber to form a plasma of the reaction gas 100112852 Form No. A0101, page 18/45 pages 1002021412-0 201240137, and the plasma is reacted with the carbon nanotube layer 102. . [0049] In step S412, the vacuum chamber may be a vacuum chamber of a reactive ion etching machine. [0050] Step S414 may specifically include the following steps: [〇〇51] Step S4142, vacuuming the vacuum chamber of the reactive ion etching machine [0052] Step s4144, passing through the vacuum chamber of the reactive ion etching machine Into the reaction gas 'the reaction gas may be selected from oxygen, hydrogen or carbon tetrafluoride; [0053] Step S4146, a plasma of the reaction gas is generated by a glow discharge reaction in the vacuum chamber, and the carbon nanotube layer The reaction was carried out at 1〇2. In step S4146, the reactive gas forms a plasma by glow discharge, the population including charged ions and electrons. Depending on the reaction gas, the electropolymer includes conventional plasma such as oxygen plasma, hydrogen plasma or carbon tetrafluoride plasma. Preferably, the reaction gas is oxygen, and the plasma is oxygen electropolymerization. Since the device has good fluidity, the plasma can penetrate into the pores 103 of the primary epitaxial structure 108 by appropriately controlling the gas pressure and reaction time in the vacuum chamber. In the hole 103 of the primary epitaxial structure 108, the carbon nanotubes are spaced apart from the epitaxial layer 1〇4. Therefore, the plasma is more likely to enter the hole 103 of the epitaxial layer 104 and impact the surface of the carbon nanotube to physically or indirectly oxidize the carbon atom in the carbon nanotube layer 102. The volatile reaction product such as carbon is chemically engraved on the carbon nanotube layer 102. When the above reaction time is not too short, the reaction between the carbon nanotube layer 102 and the plasma is insufficient, and the purpose of removing the carbon nanotube layer 102 cannot be achieved. The power of the above glow discharge reaction can be 20~300 watts, 100112852 Form nickname A0101 Page 19 of 45 1002021412-0 201240137 is preferably 150 watts. The reaction gas flow rate is 10 to 100 standard conditions in milliliters per minute (seem), preferably 50 seem. The gas pressure in the vacuum chamber is from 1 to 100 Pa, preferably 10 Pa. The reaction time of the plasma with the carbon nanotubes is from 10 seconds to 1 hour, preferably from 15 seconds to 15 minutes. [0055] The method for removing the carbon nanotube layer 102 by laser heating specifically includes the following steps: [0056] Step S422; providing a laser device, and emitting a laser beam from the laser device to the primary epitaxial structure 108 The surface of the substrate 100. [0057] Step S424; in the environment containing oxygen, the laser beam is moved relative to the surface of the substrate 100 in the primary epitaxial structure 108 to cause the laser beam to scan the substrate 100 in the primary epitaxial structure 108. s surface. [0058] In step S422, the laser device includes a solid laser, a liquid laser, a gas laser, and a semiconductor laser. 8秒。 The laser power density is greater than 0.053xl012 watts / square meter, the spot diameter is in the range of 1 mm to 5 mm, the laser irradiation time is less than 1.8 seconds. In this embodiment, the laser device is a carbon dioxide laser having a power of 30 watts, a wavelength of 10.6 micrometers, and a spot diameter of 3 millimeters. Preferably, the laser beam is incident perpendicularly to the surface of the substrate 100 in the primary epitaxial structure 108, i.e., the laser beam is substantially perpendicular to the surface of the substrate 100. [0059] The selection of the parameters of the laser device should take into account the stability of the material of the epitaxial layer 104 under laser illumination. When the material of the epitaxial layer 104 is GaN, a low temperature GaN buffer layer may be grown in the process of growing GaN, a high temperature GaN layer may be grown later, or a high temperature GaN layer may be directly grown. In this embodiment, 100112852 Form No. A0101 Page 20 of 45 1002021412-0 201240137 [0060] [0062] 100112852 Epitaxial layer 104 includes a low temperature GaN buffer layer and a high temperature GaN layer. Since the 'low temperature GaN buffer layer is highly absorptive to lasers with a wavelength of 248 ηηη, 'low-temperature GaN will decompose into Ga and N2 ° under laser irradiation with a wavelength of 248 nm. Therefore, if the epitaxial layer 1〇4 includes low-temperature GaN For the buffer layer, when the carbon nanotube layer 1〇2 is removed by the clock, the laser with a wavelength of 248 nm should be avoided. When the epitaxial layer 1 () 4 is made of other materials, it is also desirable to avoid selecting a laser which causes the epitaxial layer 104 to be unstable. The laser device includes at least one laser, and when the laser device includes a laser, the laser device is illuminated to form a spot having a diameter of from 1 mm to 5 mm. When the laser device comprises a plurality of lasers, the laser device is illuminated to form a continuous laser scanning region, which is a strip-shaped spot composed of a plurality of consecutive laser spots, the strip-shaped spot having a width of 1毫米〜5 mm, the length is greater than or equal to the width of the surface of the substrate 1〇〇. Step S424 can be implemented by the following two methods: Method 1: Fixing the primary epitaxial structure 108, and then moving the laser device to illuminate the carbon primary epitaxial structure 108. The method specifically includes the following steps: fixing the primary epitaxial structure 108; providing a a movable laser device; and moving the laser device to scan a surface of the substrate 100 in the primary epitaxial structure 1 〇8. Method 2: A method of fixing a faulty device, moving a primary epitaxial structure, and causing a clock to illuminate a surface of the substrate 100 in the primary epitaxial structure 108, specifically comprising the steps of: providing a fixed laser device, the laser The device forms a clock-scanning area in a fixed area; providing the primary outer form number A0101 page 21/45 pages 1002021412-0 201240137 extended structure 1 0 8, the base in the primary epitaxial structure 1 0 8 The surface of the crucible passes through the laser scanning zone at a certain speed. [0064] If the substrate 100 is an opaque material 'When the laser beam is irradiated on the surface of the substrate 1', the substrate 1 is heated by the laser beam and conducts heat to the carbon nanotube layer 102. . Since the carbon nanotubes in the holes 1 〇 3 of the epitaxial layer 104 are spaced apart from the epitaxial layer 104, oxygen is more likely to enter the holes 1 〇 3 of the epitaxial layer 1 〇 4 . The carbon nanotubes in the carbon nanotube layer 102 absorb heat and are oxidized to carbon dioxide gas under the action of oxygen to be removed. [0065] If the substrate 100 is a light transmissive material, the laser beam can penetrate the substrate ι The ruthenium is directly irradiated on the carbon nanotube layer 102. Since the carbon nanotubes have good absorption characteristics for the recording, and the carbon nanotubes in the carbon nanotube layer 102 will absorb the misdirected energy S and react with oxygen to be removed by the combustion, the primary epitaxy can be controlled. The moving speed of the structure 108 or the moving speed of the laser scanning area controls the time of laser irradiation of the carbon nanotube layer 102, thereby controlling the energy absorbed by the carbon nanotubes in the carbon nanotube layer 102, so that the nano The carbon nanotubes in the carbon tube layer 102 are ablated and removed. It can be understood that for a laser device with a fixed power density and a fixed wavelength, the velocity of the carbon nanotube layer i 〇 2 passing through the laser scanning region is smaller. The longer the carbon nanotube layer 1 〇 2 is irradiated, the nano carbon The more energy the nanotube bundle in the tube layer 102 absorbs, the easier it is for the carbon nanotube layer 102 to be removed by burning. In this embodiment, the relative movement speed of the laser and the carbon nanotube layer 102 is less than 1 mm/sec. It is to be understood that the above method of erroneously scanning the carbon nanotube layer is not limited as long as the carbon nanotube layer 1 〇 2 can be uniformly irradiated. The clock shot can be performed line by line along the arrangement direction of the carbon nanotubes in the parallel carbon nanotube layer 102, or along the vertical 100112852 Form No. A0101 Page 22 / Total 45 Page 1002021412-0 201240137 On the nano tube layer 10 The arrangement direction of the 2 carbon nanotubes is performed column by column. [0066] The method for heating the carbon nanotube layer ι 2 by a heating furnace in an air atmosphere specifically includes the following dreams: [0067] Step S432, a heating furnace is provided. The structure of the heating furnace is not limited as long as a uniform and stable heating temperature can be provided. Preferably, the furnace is a resistance furnace. The electric resistance furnace may be a resistance furnace of the prior art. [0068] Step S432, the primary epitaxial structure 108 is placed inside the heating furnace, and the primary epitaxial structure 1〇8 is heated in an oxygen atmosphere. [0069] The carbon nanotube layer 1〇2 in the primary epitaxial structure 韹108 absorbs the heat of the heating furnace and reacts with oxygen to be ablated. The temperature of the resistance furnace is above 600QC, and the enthalpy ensures that the carbon nanotubes get enough heat and anti-deer. Preferably, the primary epitaxial structure is heated to 65 〇s C or more by an electric resistance furnace to remove the nano-barrier layer 102. [0070] After the carbon nanotube layer 1〇2 is removed, the epitaxial structure 10 is obtained. The epitaxial layer 104 of the epitaxial structure 10 has a region of the non-holes 103 of the plurality of holes 103' epitaxial layers 1 〇 4 in contact with the substrate 100. [0071] The laser heating or heating furnace heating or the plasma etching method for removing the carbon nanotube layer 1〇2 provided by the invention has the advantages of simple method and no pollution. [0072] In the first embodiment of the present invention, the sapphire substrate 100 is irradiated by a two-vaporized carbon two-shot device in an oxygen-containing environment, and the laser is irradiated through the sapphire substrate to irradiate the surface of the carbon nanotube layer to form a nanocarbon. The tube layer is ablated and is expected. The carbon dioxide laser has a power of 30 watts and a wavelength of 1 〇 6 ^ ^ # meters 100112852 Form No. A0101 Page 23 / Total 45 pages 1002021412-0 201240137 'S spot straight (four) 3 mm 'carbon monoxide laser device with sapphire substrate The relative motion of 100 is less than 10 mm/sec. [0075] The epitaxial structure 1G prepared in the first embodiment of the present invention includes a substrate 1 and an epitaxial layer 104. The substrate 1 has an epitaxial growth surface ιοί, and the epitaxial layer 104 is disposed. The epitaxial growth surface 101 of the substrate 100. The epitaxial layer 104 has a plurality of holes 1〇3 which are distributed at the interface of the epitaxial layer 104 and the substrate 100. The formation of the plurality of holes 1〇3 corresponds to the shape of the carbon nanotube layer 102. The second embodiment of the present invention provides a method for preparing an epitaxial structure. The method for preparing an epitaxial structure according to the second embodiment of the present invention is substantially the same as the method for preparing an epitaxial structure according to the first embodiment of the present invention. The substrate is a silicon on insulator on an insulator, and the carbon nanotube layer is a plurality of parallel and spaced carbon nanotubes. Specifically, first, a plurality of parallel and spaced carbon nanotube lines are laid on the epitaxial growth surface of the SOI substrate. Then epitaxially growing the GaN epitaxial layer on the epitaxial growth surface of the substrate, the growth temperature is 〇7〇°c, and the growth time is 45 〇 seconds, mainly for the longitudinal growth of GaN; then the pressure of the reaction chamber is kept constant, and the temperature is raised to 1110°. C, while reducing the Ga source flow, while maintaining the ammonia flow rate to promote lateral epitaxial growth, the growth time is 49 〇〇 seconds; again, reduce the temperature to 1 070 C, while increasing (^ source flow continues longitudinal growth resistance The furnace removes the base tube layer. 'Three thousand and ten thousand seconds respectively. Finally, in an oxygen-containing environment, it is heated to 600 by an electric 100 and GaN epitaxial layer. (: The nanocarbon is thus epitaxially grown by the M0CVD method. 100112852 Methyl gallium (TMGa), trimethyl aluminum (TMA1) as the source material of Ga and gossip Form No. A0] 0〗 Page 24 / Total 45 pages 00202] 4] 2-0 201240137 [0076]氨 [0078] Ammonia gas (νη3) is used as a source material of nitrogen, hydrogen gas (Η) is used as a carrier gas, and is heated by a horizontal level reactor. The epitaxial structure prepared by the second embodiment of the present invention and the present invention The outer surface prepared by the first embodiment of the invention The structure is similar, and the difference is that the hole is a plurality of mutually parallel grooves, and the groove can be a nano-scale groove. The second embodiment of the present invention is a method for preparing an epitaxial structure. The method for preparing the epitaxial structure provided by the third embodiment is basically the same as the method for preparing the epitaxial structure provided by the second embodiment of the present invention, and the difference is that the plurality of nano carbon lines are disposed on the epitaxial growth surface of the substrate at intervals and intervals. To form a carbon nanotube layer, after the epitaxial layer is grown, the carbon nanotube layer is removed by an oxygen plasma lithography method to form intersecting and interconnected pores in the epitaxial layer. Specifically, the nanocarbon layer in the carbon nanotube layer The carbon carbon pipelines are respectively disposed in parallel with the second direction along the first direction, and the first direction is disposed to intersect with the second direction. An opening is formed between the adjacent four carbon carbon pipelines in the first and second directions. In this embodiment, The adjacent two nano carbon pipelines are arranged in parallel, and the intersecting two nano carbon pipelines are perpendicular to each other. It can be understood that the nano carbon pipelines can also be arranged in any cross manner, and only need to make nanometers The tube layer forms a plurality of openings to expose the epitaxial growth surface portion of the substrate. Referring to FIG. 10, an epitaxial structure 10 prepared by the method of the third embodiment of the present invention includes: _substrate 1〇〇 An epitaxial layer 1 〇 4 and a plurality of interconnected and interconnected holes 112 formed in the epitaxial layer 104. The fourth embodiment of the present invention further provides a method for fabricating an epitaxial structure, which specifically includes the following steps: 100112852 Form number Α 0101 Page 25 / page 45 1002021412-0 [0079] [0084] [0084] S102: providing a substrate, and the substrate has a - epitaxial growth surface; (4) S202: disposed on the epitaxial growth surface of the substrate - the 礤 礤 camp base and the carbon nanotube layer together form a substrate; and the addition of the S302. The homoepitaxial layer S402 is grown on the epitaxial growth surface of the substrate: Removing the carbon nanotube layer to obtain an epitaxial junction. The method for growing the epitaxial layer of the fourth embodiment of the present invention is basically the same as the method for growing the epitaxial layer, and the difference is that the material of the epitaxial layer of the embodiment is the same, thereby constituting The substrate and outer homogeneous, extended BU junction fans; embodiment, the material of the substrate and the epitaxial layer defect Gou Ming fourth embodiment. The epitaxial layer 100 and the epitaxial layer 104 are of a homogenous structure, that is, the epitaxial layer aN° is homogenous to the boundary 1〇4 of the epitaxial layer 1〇4 when the substrate is grown. The actual structure of the epitaxial structure 10 is a layer structure, and the plurality of holes 103 in the homogenous structure are connected to each other in the same plane, in-plane [〇〇85], please refer to FIG. The fifth embodiment provides a method for growing an epitaxial structure, which specifically includes the following steps: [0086] S104: providing a substrate 100 having an epitaxial growth surface 101 supporting epitaxial layer growth; S087: a first carbon nanotube layer 1 0 6 is disposed on the epitaxial growth surface 1〇1 of the substrate 100; [0088] S304: a first epitaxial layer is grown on the epitaxial growth surface 1〇1 of the substrate 100 107; 100112852 Form No. A0101 Page 26 of 45 1002021412-0 201240137 [0089] [0091] [0093] [0093]

[0094] S404: a second carbon nanotube layer 109 is disposed on a surface of the first epitaxial layer 107 away from the substrate 100; S504: a second epitaxial layer is grown on a surface of the first epitaxial layer 107 away from the substrate 100. 110: obtaining a primary epitaxial structure 208; S604: removing the first carbon nanotube layer 106 and the second carbon nanotube layer 109 in the primary epitaxial structure 208. The method for growing the epitaxial structure 20 according to the fifth embodiment of the present invention is similar to the method for growing the epitaxial structure 10 provided by the first embodiment, and the difference is that the substrate 100 of the fifth embodiment of the present invention has two layers of epitaxial growth thereon. The first epitaxial layer 107 and the second epitaxial layer 11 are formed, and a hole-shaped microstructure is formed between the first epitaxial layer 107 and the second epitaxial layer 110, and the first epitaxial layer 107 and the epitaxial layer 100 are epitaxial. A hole-like microstructure is also formed between the growth faces 101. The substrate 100, the first epitaxial layer 107, and the second epitaxial layer 110 may be homogenous or heterogeneous. In step S604, the first carbon nanotube layer 106 and the second carbon nanotube layer 109 are removed by laser irradiation. The laser may be incident from the surface of the substrate 1 , or may be incident from the surface of the second epitaxial layer 110. Preferably, the laser light is incident from the surface of the substrate 1 及 and the surface of the second epitaxial layer, respectively, so that the intensity and time of the required laser light can be reduced. It can be understood that step S404 and step s504 can be repeated, and the epitaxial layer is repeatedly grown on the epitaxial growth surface 101 of the substrate 100, so that at least two epitaxial layers can be grown on the epitaxial growth surface 101 of the substrate 100, such as the epitaxial growth surface 101 of the substrate. The n-th epitaxial layer is sequentially stacked, wherein n is an integer greater than or equal to 2. A gap is formed between adjacent epitaxial layers of the at least two epitaxial layers. 100112852 Form No. Α0101 Page 27/Total 45 Pages 1002021412-0 201240137 The epitaxial structure comprises a plurality of epitaxial layers arranged at a plurality of layers, and at least the epitaxial layer of the phase 4 is provided with a plurality of microporous structures, and the microporous structure may be a nanoporous structure. [Warning for the external search for the dragon (four) for the preparation of the beneficial effects of the first invention] The present invention provides a method for forming a hole-shaped nano-scale microstructure between the epitaxial layer and the substrate, the method by setting the carbon nanotube layer The method as a mask can form a hole-like microstructure on the surface of the epitaxial layer without peeling off the substrate. The method is simple and low in cost, and overcomes the fact that the cutting technique can hardly form a hole between the epitaxial layer and the substrate. Technical problems with nanoscale microstructures. [(8)97] The epitaxial structure prepared by the method of the present invention is applied to the manufacture of the light-emitting diode, and the nano-scale microstructure formed on the surface of the epitaxial layer can effectively improve the light-emitting efficiency; and the light efficiency is not required. To simplify the method. [0099] [0100] The third 'nano (four) tube layer is self-supporting (four) structure' can be directly laid on the surface of the substrate. The method is simple' and is advantageous for large-scale industrial manufacturing. The fourth method of the present invention can realize a preparation-homogeneous structure having a plurality of nano-scale microporous structures distributed in a plane or in a plane parallel to each other and spaced apart, in the field of semiconductor technology and the like The field has broad application prospects. In summary, the present invention has indeed met the requirements of the invention patent, and the patent is filed according to law. However, the above description is only the preferred embodiment of the present invention 100112852. It is not possible to limit the patent application scope of the present invention. Form No. A0101, page 28/45 pages, the person skilled in the art 1002021412-0 201240137 Equivalent modifications or variations of the spirit of the invention are intended to be included within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS [0101] FIG. 1 is a flow chart of a method for fabricating an epitaxial structure according to an embodiment of the present invention. 2 is a scanning electron micrograph of a carbon nanotube film used in an embodiment of the present invention.

3 is a schematic view showing the structure of a carbon nanotube segment in the carbon nanotube film of FIG. 2. 4 is a scanning electron micrograph of a carbon nanotube film provided in a plurality of crossovers according to an embodiment of the present invention. 5 is a scanning electron micrograph of a non-twisted nanocarbon line used in an embodiment of the present invention. 6 is a scanning electron micrograph of a twisted nanocarbon line used in an embodiment of the present invention. 7 is a schematic view showing a growth process of an epitaxial layer in an embodiment of the present invention. 8 is a scanning electron micrograph of a cross section of a heteroepitaxial structure prepared in accordance with a first embodiment of the present invention. 9 is a transmission electron micrograph of a heteroepitaxial structure interface prepared in accordance with a first embodiment of the present invention. 10 is a schematic perspective view of an epitaxial structure according to a third embodiment of the present invention. 1002021412-0 100112852 Form No. A0101 Page 29 of 45 201240137 [0111] FIG. 11 is a flow chart of a method for fabricating an epitaxial structure according to a fifth embodiment of the present invention. [Description of main component symbols] 100112852 Form No. A0101 Page 30 of 45 1002021412-0 [0112] Epitaxial structure: 10, 20 [0113] Substrate: 100 [0114] Epitaxial growth surface: 101 [0115] Nano carbon Tube layer: 102 [0116] Hole: 10 3, 11 2 [0117] Epitaxial layer: 104 [0118] Opening: 10 5 [0119] First carbon nanotube layer: 106 [0120] First epitaxial layer: 107 [ 0121] Primary epitaxial structure: 108 '208 [0122] Second carbon nanotube layer: 109 [0123] Second epitaxial layer: 110 [0124] Epitaxial grain: 1042 [0125] Epitaxial film: 1044 [0126] Carbon tube fragment: 143 [0127] Nano carbon tube: 145

Claims (1)

201240137 VII. Patent application scope: 1. A method for preparing an epitaxial structure, which comprises the following steps: providing a substrate having an epitaxial growth surface supporting epitaxial layer growth 9 disposed on an epitaxial growth surface of the substrate a carbon nanotube layer; an epitaxial layer is grown on the epitaxial growth surface of the substrate and covers the carbon nanotube layer to form a primary epitaxial structure; and the carbon nanotube layer in the primary epitaxial structure is removed. 2. The method for preparing an outer structure according to the scope of claim 1, wherein the method for removing the carbon nanotube layer in the primary epitaxial structure is a nano-carbon nanotube layer The carbon tube is physically etched. 3. The method for preparing an outer structure according to claim 1, wherein the method of removing the carbon nanotube layer in the primary epitaxial structure is by passing carbon atoms in the carbon nanotube layer. The oxidation reaction generates carbon dioxide to chemically etch the carbon nanotube layer. 4. The method for preparing an outer structure according to claim 1, wherein the carbon nanotube layer is a self-supporting structure, and the carbon nanotube layer is directly laid on the substrate for epitaxial growth. And disposed in contact with the substrate. 5. The method of preparing an outer structure according to claim 4, wherein the carbon nanotube layer is a continuous unitary structure. 6. The method for preparing an outer structure according to claim 4, wherein the carbon nanotube layer is at least one layer of carbon nanotube film, and the carbon nanotube film comprises a plurality of carbon nanotube tubes The preferred orientation extends in the same direction, and adjacent carbon nanotubes extending in the same direction in the carbon nanotube film are connected end to end by van der Waals force. The method for preparing an outer structure according to the fourth aspect of the invention, wherein the carbon nanotube layer is plural and parallel to each other and is disposed at intervals of 10012. Nano carbon pipeline. 8. The method for preparing an outer structure according to the fourth aspect of the invention, wherein the carbon nanotube layer is a network structure composed of a plurality of carbon nanotubes. The method for preparing an outer structure according to claim 4, wherein the carbon nanotube layer has a plurality of openings, the epitaxial layer covers the carbon nanotube layer and penetrates the nanocarbon The opening of the tube layer is in contact with the epitaxial growth surface of the substrate. The method for preparing an outer structure according to claim 1, wherein the method for growing the epitaxial layer specifically comprises the steps of: nucleating and epitaxially growing in a direction substantially perpendicular to an epitaxial growth surface of the substrate; Forming a plurality of epitaxial grains; the plurality of epitaxial grains are laterally epitaxially grown along a direction substantially parallel to an epitaxial growth surface of the substrate to form a continuous epitaxial film; the epitaxial film is epitaxially grown substantially perpendicular to the substrate Epitaxial growth in the plane direction forms an epitaxial layer. The method for preparing an outer structure according to claim 10, wherein, in the lateral epitaxial growth, the epitaxial layer forms a plurality of holes around the carbon nanotube layer to form the carbon nanotube Surrounded by carbon nanotubes in the layer. 12. The method for preparing an outer structure according to claim 1, wherein the method of removing the carbon nanotube layer in the primary epitaxial structure is a plasma etching method, and the plasma etching method The method for removing the carbon nanotube layer specifically includes the following steps: first, placing the primary epitaxial structure into a vacuum chamber of a reactive ion etching machine; secondly, drawing the vacuum chamber into a vacuum, in the reactive ion etching machine The reaction gas is introduced into the vacuum chamber; finally, the plasma of the reaction gas is generated by the glow discharge reaction in the vacuum chamber in the above-mentioned 100112852 Form No. A0101, page 32/45 pages 1002021412-0 201240137, the plasma is applied to the nanometer. The carbon tube layer is physically etched or reacted with the carbon nanotube layer to perform chemical button etching to remove the carbon nanotube layer. 13. The method of preparing an outer structure according to claim 12, wherein the plasma of the reaction gas comprises an oxygen plasma, a hydrogen plasma or a carbon tetrafluoride plasma. 14. The preparation method of the extended structure as described in claim 1 of the patent application, In 100112852, the method for removing the carbon nanotube layer in the primary epitaxial structure is a laser heating method, and the method for removing the carbon nanotube layer by the laser heating method comprises the following steps: providing a laser device, The laser device emits a laser beam to a surface of the substrate in the primary epitaxial structure; in an environment containing oxygen, the laser beam is caused to move relative to the surface of the substrate in the primary epitaxial structure to cause the laser beam to scan the primary The surface of the substrate in the epitaxial structure, the carbon nanotubes in the carbon nanotube layer absorb the laser energy and react with oxygen to be removed. The method for preparing an outer structure according to the first aspect of the invention, wherein the method for removing the carbon nanotube layer in the primary epitaxial structure is a heating furnace heating method: providing a heating furnace; The primary epitaxial structure is placed inside the heating furnace, and the primary epitaxial structure is heated in an atmosphere containing oxygen, wherein the heating temperature is greater than 600 SC, and the carbon nanotube layer in the primary epitaxial structure absorbs heat It is ablated and removed by reaction with oxygen. The method for producing an outer structure according to the first aspect of the invention, wherein the epitaxial layer is a heteroepitaxial layer. The method of producing a structure according to claim 1, wherein the epitaxial layer is a homoepitaxial layer. Form No. A0101, page 33 / page 45 1002021412-0 201240137 18 - a method for preparing an epitaxial structure, specifically comprising the steps of: providing a substrate having an epitaxial growth surface; a carbon nanotube layer is disposed on the growth surface; an n-th epitaxial layer is sequentially stacked on the epitaxial growth surface of the substrate to form a primary epitaxial structure, wherein a carbon nanotube layer is disposed between adjacent epitaxial layers, η An integer greater than or equal to 2; the carbon nanotube layer in the primary epitaxial structure is removed. 100112852 Form number Α0101 Page 34 of 45 1002021412-0