TW201239026A - Liquid sealing resin composition and semiconductor device using the same - Google Patents
Liquid sealing resin composition and semiconductor device using the same Download PDFInfo
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
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- C08K3/34—Silicon-containing compounds
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
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- C08K5/34—Heterocyclic compounds having nitrogen in the ring
- C08K5/3442—Heterocyclic compounds having nitrogen in the ring having two nitrogen atoms in the ring
- C08K5/3462—Six-membered rings
- C08K5/3465—Six-membered rings condensed with carbocyclic rings
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- C08K7/00—Use of ingredients characterised by shape
- C08K7/16—Solid spheres
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
- H01L23/295—Organic, e.g. plastic containing a filler
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- C—CHEMISTRY; METALLURGY
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
- C08K3/20—Oxides; Hydroxides
- C08K3/22—Oxides; Hydroxides of metals
- C08K2003/2227—Oxides; Hydroxides of metals of aluminium
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- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/002—Physical properties
- C08K2201/003—Additives being defined by their diameter
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16237—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area disposed in a recess of the surface of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/81009—Pre-treatment of the bump connector or the bonding area
- H01L2224/8101—Cleaning the bump connector, e.g. oxide removal step, desmearing
- H01L2224/81011—Chemical cleaning, e.g. etching, flux
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81191—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
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- H—ELECTRICITY
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/351—Thermal stress
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Abstract
Description
201239026 六、發明說明： 【發明所屬之技術領域】 【0001】 本發明係關於一種兼具高熱傳導率.、低介電率及高間隙流入 性質的液態密封樹脂組成物，以及使用該液態密封樹脂組成物之 凸塊連接方式的半導體裝置。 本申請案基於2011年2月14日在曰本提申的日本特願 2011-028338號主張優先權，並援用其内容。 、 【先前技術】 _ 【0002】 近年，於各種的電子資訊處理設備中，廣泛使用凸塊連接方 式的半導體裝置，其能夠在狹小面積進行高密度安裝。而在凸塊 連接方式的半導體裝置中，利用凸塊將半導體元件及基板電性連 接後，為了提咼半導體裝置的連接可靠性，一般會在半導體元件 與基板的間隙，填充被稱為底部填充材料的液態密封樹脂並使豆 硬化，藉以補強連接凸塊的周邊。 /、 【0003】 此^另-方面’作'為高資訊化社會進展的—面，必需面臨將 所有的貧訊電子數據化，並立即地處理及傳達該些數據。， 針對κ現低奴社會等的環境問題’也必須加以應對。因而需要一 广耗電處理大量電子數社低廉的電子資訊處理設 ====人設備的半導财置，也需要是能夠在低耗電 二因此’半導體農置的發熱對策及電磁雜訊對 朿璧付重要。因而對於凸塊連接方式的半導 密封樹脂，也要求高熱料率及低介電率^ 資^ 理裝置的低價化，半導體裝置已往小型、.薄 塊連接方式的半導體裝置中，半導體元件 塊的間隔幾乎都不到100_，據觀察:;t連接$ 了將其士所使㈣祕密封樹脂也要求具有更高侧隙流入 3 201239026 杜質。因此需要—種兼具高敎 八 質的液態密封樹脂。 ‘、’革、低"電率及高間隙流入性 【0004】 料，置用液態密封樹脂，—般皆含有1介娜 導性，-般會儘量含有多量強^但是為了改善熱傳 性比較低的二氧化石夕填料。可】的f科’以y代熱傳導 化鎮等高熱料性填料储為人知的 、氧化紹及氧 塗層之含有氮化銘者(例如專利i例如’/表面具有氧偏呂 專利文獻2及3)。 f J又馱υ、或者含有氮化紹者(例如 然而，如前述之高熱傳導填料，i 丄 脂本身的介電率也變得較高1有液態密封樹 體裝置之動作安定.· _ 平啕』此口發生电磁雜訊而斟主道 有平衡關係的問題 石夕埴料，以及介ί^:=傳導性低但介電率較低的場 =電率及熱傳導率。然而，為了得到維 ，傳導性的液態密封樹脂，結果必須提高介電率低= 有率’細賴咖刪，且_流入性質降 料。在含有該等高熱傳導率填料J定^ %率夕焉於二氧化石夕填 體裝置之動作安定性造成η =二土电砸雜訊而對半導 有平·細^綱4。因此，綠料率及低介電率間 另一方面 折為了提高使用二氧化矽填料的液態密封樹脂的間隙流入性 夤，已有人提出各種提高間隙流入性質的技術，例如採用表面 鹼性二氧化矽填料者(例如專利文獻4)等，其使用鹼性物質以特殊 方法處理二氧化矽填料的表面，並且切割具有預定值以上的粗粒 子二但是該等使用二氧化矽及鋁之混合填料的液態密封樹脂，並 不能夠兼具高熱傳導率、低介電率及高間隙流入性質。 201239026 [先前技術文獻] [專利文獻] 【0005】 專利文獻1日本特開2002-265794號公報 專利文獻2日本特開2008-274083號公報 專利文獻3日本特開2010-118649號公報 專利文獻4日本特開2005-170771號公報 【發明内容】 [發明的概要] [發明所欲解決的課題] 【0006】 【0007】 本發明為如下。 婦料:i 大乳化紹和S狀二氧化石夕之混合物的無機填 充材枓*作必要成分，且pH值大於7。 (2) 如（1)之液，密封樹脂組成物，更含有（D)鹼性化合物。 (3) 如（2)之液態密封樹脂組成物，其中前述卬)鹼性化合物選 自於1，8-一氮雜雙環(5· 4. 〇)十一燁_7、1，5-二氮雜雙環(4· 3· 〇) 壬烧-5、及§玄等.之鹽中的至少一種。 &—(4)如（1)至（3)中任一項之液態密封樹脂組成物’其中，於液 ，，。封樹脂組成物中，（C)無機填充材料的含量為70質量％以上80 質量％以下’且球狀氧化鋁的含量為3〇質量％以上45質量％以下。201239026 VI. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a liquid sealing resin composition having high thermal conductivity, low dielectric constant and high gap inflow property, and using the liquid sealing resin A semiconductor device in which a bump is connected to a composition. This application claims priority based on Japanese Patent Application No. 2011-028338, filed on Feb. 14, 2011, and is incorporated herein by reference. [Prior Art] _ [0002] In recent years, a bump-connected semiconductor device has been widely used in various electronic information processing apparatuses, and it is possible to perform high-density mounting in a narrow area. In the bump-connected semiconductor device, after the semiconductor element and the substrate are electrically connected by bumps, in order to improve the connection reliability of the semiconductor device, the filling is generally referred to as underfill in the gap between the semiconductor device and the substrate. The liquid sealing resin of the material hardens the beans to reinforce the perimeter of the connecting bumps. /, [0003] This is another aspect of the development of a high-information society, which must be electronically digitized and processed and communicated immediately. It is also necessary to respond to environmental problems such as the low-slave society of κ. Therefore, it is necessary to have a large amount of power consumption to process a large number of electronic digital agencies, low-cost electronic information processing, ==== semi-conducting of human equipment, but also need to be able to reduce power consumption, so the 'semiconductor farm's heating countermeasures and electromagnetic noise It is important for payment. Therefore, for the semi-conductive sealing resin of the bump connection type, a high hot-rate ratio and a low dielectric constant device are required to be reduced in cost, and a semiconductor device has been a small-sized, thin-block-connected semiconductor device, and a semiconductor device block. The interval is almost no more than 100_, it is observed that: t connection $ has been made by the priest (4) secret sealing resin is also required to have a higher backlash into the 3 201239026 Du quality. Therefore, it is required to have a liquid sealing resin having a high quality of eight. ', 'leather, low', electric rate and high gap inflow [0004] material, using liquid sealing resin, generally contain 1 inductive, generally will contain as much as possible ^ but in order to improve heat transfer A relatively low dioxide dioxide filler. The f-type 'is known as the y-generation heat-conducting town and other high-heat fillers, and the oxide-containing and oxygen-coated coatings contain nitriding (for example, patent i such as '/ surface has oxygen partial patent 2 and 3). f J is 驮υ, or contains nitriding (for example, as mentioned above, the high thermal conductivity filler, i 丄 本身 本身 的 的 的 本身 本身 本身 本身 本身 本身 有 有 有 有 有 液态 液态 液态 液态 液态 液态 液态 液态 液态 液态 液态 液态 液态 液态 液态啕 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此 此Dimensional, conductive liquid sealing resin, the result must be low dielectric constant = rate of 'detailed', and _ influx of material decline. In the presence of these high thermal conductivity fillers The action stability of the Shixi filling device causes η = two earth electricity noise and the semi-conductor has a flat and fine structure 4. Therefore, on the other hand, the green material rate and the low dielectric constant are used to improve the use of cerium oxide. The gap inflow property of the liquid sealing resin of the filler has been proposed in various techniques for improving the inflow property of the gap, for example, a surface alkaline cerium oxide filler (for example, Patent Document 4), which uses a basic substance to treat a special method. The surface of the cerium oxide filler, and the cutting tool A coarse particle having a predetermined value or more, but such a liquid sealing resin using a mixed filler of cerium oxide and aluminum does not have high thermal conductivity, low dielectric constant, and high gap inflow property. 201239026 [Prior Art Paper] [ [Patent Document 1] Japanese Laid-Open Patent Publication No. JP-A-2005-170771 [Summary of the Invention] [Problems to be Solved by the Invention] [0007] The present invention is as follows: A material: i: an inorganic filler of a mixture of a large emulsified and a sigma-type sulphur dioxide It is a necessary component and has a pH of more than 7. (2) The liquid of (1), the sealing resin composition, and the (D) basic compound. (3) The liquid sealing resin composition of (2), wherein the卬) a basic compound selected from the group consisting of 1,8-azabicyclo (5· 4. 〇) eleven 烨7, 1,5-diazabicyclo (4·3· 〇) 壬-5, and § Xuan et al. At least one of the salts. < (4) The liquid sealing resin composition of any one of (1) to (3), wherein, in the liquid, . In the sealing resin composition, the content of the (C) inorganic filler is 70% by mass or more and 80% by mass or less and the content of the spherical alumina is 3% by mass or more and 45% by mass or less.
S 广(5)如（1)至（3)中任一項之液態密封樹脂組成物，其中該球狀 氧化紹的平均直徑為〇.5从m以上以下’且該球狀二氧化矽 的平均直徑為0· 25//πι以上2//Π1以下。 5 201239026 ⑹-種半導體裝置，包含半導體元件及能裝鮮導體元 基板，其舰為：辭導體元件及錄板之間，以如⑴ 液態密封樹脂組成物的硬化劑來加以密封。 一、 ⑺-種半導體裝置的製造方法’包含於能触載 的基板上，接裝載半導體元件的步驟；以及於半導體元 間填充液悲禮封樹脂組成物並加以硬化的步驟， 使用的液態密封樹脂組成物為如⑴或⑵:ί密: [發明的效果] 【0008】 ΐΐ本發明，能夠提供—種液11密封樹脂組成物，1兼且古 Μ又用前述液態密封樹脂組成物組裝本發_@體 裝置，可達錢少發熱及電磁雜訊，更_ 疗，？夠得到以低耗電、安定地高速 佳的疋凸塊連接方式的半導體裝置。 、尤/、車乂 再者，依據本發明之半導體裴詈的制i 液態密封樹脂組成物，能夠提供於使用上述 置。尤其較佳的是製造凸塊連接^式的半性的半導體裝 【實施方式】 [用以實施發明的形態] 【0010】 半導3罢明之液態密封樹脂組成物、半導體茫置、及 牛¥體裝置的製造方法，加以說明。 卞♦篮装置及 本發明之液態密封樹脂組成物，係每 劑、（C)為球狀氧化紹和球狀二氧化 人)^氧^旨、⑻硬化 板進行凸塊連接後，魏封半導體在料紅件及基 發明之液態密封樹脂組成物。 及基板之間隙時，使用本 201239026 上述液態細件與基板之間，係以 【0011】 首先，針對液態密封樹脂組成物加以說明。 後的ίίϊίϊ態匕密封樹脂組成物包含職樹脂(A)。藉此，硬化 強度，二能夠月牢曰=:接Ji J良二齡 具良好可靠性導體70件與基板。因此，能夠得到 不特分子中具有2個以上的環氧基即可， 構。例如可列舉出：細则環氧樹脂、 胺、N，N-二縮水甘油鱗甲苯胺、4水甘油趟苯 胺基酚型縮水甘油醚胺等的芳香土 =甲烧堅鈿水甘油醚胺、 酉昆型環氧樹脂；聯苯型環^月甘油刚f型環氧樹脂；氫 烧型環氧樹脂；：r苯龄丙产型^ ^乙_&乳樹脂；三齡甲 氧樹脂；含有：樹脂；烧基改質三齡甲炫型環 脂;萘晴=雙 =稀改質_環氧樹 骨架的苯崎絲型環氧翻旨、“ 本笨基 來看’包含、機械特性及耐g的觀點 的結構是較佳的構結構鍵結於芳香族環 肪族f脂環式環氧樹脂的使用量是點來ΐ，限制脂 態’但是即使在常溫為‘心㈣其為； r**· Λ 7 201239026 解於液，的環氧勸旨，結果是液體的狀態即可。 物具’常溫係指说。又，液態是指樹月旨或樹月旨組成 性。於本么明中’上述液態樹脂組成物在常溫(25。〇下具有流動 【0013】 1抖液_封樹脂組成物包含硬化_)。只要㈣靜 軋树月日（A)硬化的物質即可力古 要此夠使％： 類、苯紛類、Λ【二::別的定。例如可列舉出胺 用1種該等物質，亦可以併用2種以上。 了以早獨地使 ⑽ίΓ從硬化性、保存性及所得到物性的平衡來看，你用π 乙基五胺、間二甲笨二胺、三甲：己：=甲：乙四胺、四亞 脂肪族多元胺、異佛_二胺、& 基二胺The liquid sealing resin composition according to any one of (1) to (3), wherein the spherical oxide has an average diameter of 〇.5 or more from m or less and the spherical cerium oxide The average diameter is 0·25//πι or more 2//Π1 or less. 5 201239026 (6) A semiconductor device comprising a semiconductor element and a fresh-conductor element substrate, the ship being: between the conductor element and the recording board, sealed with a hardener such as (1) a liquid sealing resin composition. (1) A method of manufacturing a semiconductor device comprising the steps of: mounting a semiconductor element on a loadable substrate; and filling a liquid sorrow resin composition between the semiconductor elements and hardening the liquid sealing method The resin composition is as follows: (1) or (2): 密密: [Effect of the invention] [0008] The present invention can provide a liquid resin 11 sealing resin composition, and a combination of the liquid sealing resin composition and the liquid sealing resin composition. Hair _@ body device, up to money less fever and electromagnetic noise, more _ treatment,? It is possible to obtain a semiconductor device with a low power consumption and a stable high-speed bump connection. Further, the ruthenium, the liquid sealing resin composition of the semiconductor crucible according to the present invention can be provided by using the above. It is particularly preferable to manufacture a semiconductor package having a bump connection type [Embodiment] [A mode for carrying out the invention] [0010] A liquid sealing resin composition, a semiconductor device, and a cow The method of manufacturing the body device will be described.卞 ♦ basket device and the liquid sealing resin composition of the present invention, each agent, (C) spherical oxidized and spherical oxidized human) oxygen, (8) hardened plate after bump connection, In the red material and the liquid sealing resin composition of the invention. When the gap between the substrate and the substrate is used, the liquid crystal sealing resin composition will be described with reference to [0011]. After the ίίϊίϊ state, the sealing resin composition contains the resin (A). Thereby, the hardening strength, the second can be sturdy == connected to Ji J Liang Erling with 70 pieces of good reliability conductor and substrate. Therefore, it is possible to obtain a structure in which two or more epoxy groups are present in the non-specific molecule. For example, a scented epoxy resin such as an epoxy resin, an amine, N,N-diglycidyl squamous toluidine, or a 4-glycidyl anilide phenolic glycidyl etheramine;酉 型 type epoxy resin; biphenyl type ring ^ glycerol just f type epoxy resin; hydrogen burning type epoxy resin;: r benzene age C type ^ ^ B _ & latex resin; three age methoxy resin; Contains: resin; burnt-based modified three-year-old styrofoam ring; naphthalene-clear = double = lean modified _ epoxy tree skeleton of Benzaki wire type epoxy, "this stupid base" inclusion, mechanical properties And the structure of the g-resistant view is a preferred structure. The amount of the epoxy ring-type epoxy resin bonded to the aromatic ring is a point that limits the lipid state, but even at room temperature, it is the heart (four). ; r**· Λ 7 201239026 Epoxy in the solution, the result is the state of the liquid. The object 'normal temperature is said. Also, the liquid refers to the composition of the tree or the tree. In the present invention, the above liquid resin composition has a flow at normal temperature (25. 〇 under the 【 [0013] 1 shake liquid _ seal resin composition contains hardening _). As long as (four) static rolling On the day of the month (A), the hardened material can be used to make it possible to make %: the class, the benzene, the Λ [2:: other. For example, one type of the amine can be used, or two kinds can be used in combination. In the light of the balance between hardenability, preservability, and physical properties, you use π-ethyl pentamine, m-diphenyldiamine, and trimethyl: hex: = A: ethylenetetramine, Four sub-aliphatic polyamines, isophora-diamines, &diamines
以柃入二i員。而且可以單獨地使用1種硬化劑，亦可 以摻合使用2種以上的硬化劑。 M J 元件之密封用途時，從耐熱性、電特性、機械 Ϊ性、⑧、合性及耐祕峨點來看，為耗族多元胺 性，==劑ί:確組成物的流動 即可，也可咖她態 【0014】 本發明之液態密封樹脂組成物，包含球狀氧化銘和球狀二氧 化矽之混合物當作無機填充材料(c)。 只要是兼具高熱傳導率、低介電率及高間隙流人性f，能夠 201239026 料體元件的可靠性’並能流人半導體元件與基板間的 其旦含量及尺寸。_，較佳的情況是無 含量為^里；旦2里^^ 0、質量％以下’且其中球狀氧化紹的 73 _ 以上 77的==== 鋁的含夏為33. 5質量％以上39. 5質量％以下。-她乳化 高，=====時，提升熱傳導率的效果 T听枯^ L 1下間隙流入性質良好。球狀氧化紹的含詈爲 低“ ^果『熱傳導率❺效果更高’而在上限值以下則降 【0015】 之比S的左右 看，較佳的情點來 ===直徑為。.^以上二。= 防止填料在的平均直徑為上限值以下，則 【0016】 :時可以適當地併_、氮化紹及 適虽地调整球狀氧化紹及球狀二氧化石夕的混合量及尺 【0017】 步福ί申?Ϊ慨 11㈣_旨域物的ΡΗ值大於7。藉此，進一 同—乳切填料及氧魅填料之分卿於樹脂系的分散性， 201239026 並jΐ降^而ΐ隙流入性質提高。同時，進一步減弱氧化銘及 父互作用，因此能夠抑制產生妨礙熱傳導的各種 :如未充填空洞、夾帶空洞或揮發空洞等，而得到 ηΐΐί氧，的等電點及氧化_等電點兩者被改善後更提 冋剛’緣，目此祕稀況是密封脑組成物的ρΗ值大於8。 在此，pH值指氫離子指數或氫離子濃度指數。Into the two i members. Further, one type of curing agent may be used alone or two or more types of curing agents may be used in combination. When the sealing effect of the MJ component is used, it is a polyamine-like substance in terms of heat resistance, electrical properties, mechanical properties, compatibility, and resistance. The liquid sealing resin composition of the present invention comprises a mixture of spherical oxide and spherical cerium oxide as the inorganic filler (c). As long as it has high thermal conductivity, low dielectric constant, and high gap flow, the reliability of the material element can be 201283026, and it can flow between the semiconductor element and the substrate. 5质量%。 _, preferably, the content is not more than ^ 里; 里 2 里 ^ ^ 0, the mass % or less 'and wherein the spherical oxidation of 73 _ 77 77 77 77 = = = = = = = = = = = = = = = = = = = The above 39.0 mass% or less. - When she emulsifies high, =====, the effect of improving the thermal conductivity is good. The ruthenium containing spheroidal oxide is low "^ fruit "heat conductivity ❺ effect is higher" and below the upper limit value is lower than the ratio S of [0015], and the preferred point of view is === diameter. ^^上二.= Prevent the average diameter of the filler from being below the upper limit, then [0016]: The spheroidal oxidation and spherical smectite may be adjusted appropriately and _, nitrided and properly adjusted. Mixing amount and ruler [0017] Step by step 申 Ϊ? Generous 11 (four) _ 旨 物 ΡΗ 大于 大于 大于 大于 大于 大于 大于 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 旨 乳 乳Jΐ decreases ^ and the inflow property of the gap increases. At the same time, the oxidation and the parent interaction are further weakened, so that various kinds of hindrance to heat conduction can be suppressed: if the cavity is not filled, the cavity is hollowed, or the volatilized cavity is obtained, the isoelectricity is obtained. Both the point and the oxidation_electrical point are improved, and the sputum is more difficult. The secret value of the sealed brain composition is greater than 8. Here, the pH refers to the hydrogen ion index or the hydrogen ion concentration index.
決ί方法並不加以限定，可以使_如石蕊試紙等pH ί不31了ΐ電極或PH感測器等°尚且，要決定録時， f f液脂組成物的邱值範圍内，可以施行前處理， 加入"μ加劑，增加加熱或冷卻等的操作。 測旦ΤιΓ中，使Q· °卜G.lml的液態密封樹脂組成物置於pH ί里j Ϊ 其上加入2ml的純水，作為檢體。然 1 ^斜感測部等使其整體被檢體覆蓋，並加以靜置直到PH鮮 斤顯示的PH值作為液態密封樹脂組成物的pH值。“ 化合較卩的情況是本發明的液態密封樹脂、组成物含有驗性 入雕祕化合物加人液態密封樹脂組成物，使樹脂組成物 亡^ pH值進-步往驗性的方向移動，藉此使球狀氧化铭與球狀 面電位更往負方向轉變，能夠改善各對於樹脂組成 刀政性，使黏度降低，故可提高間隙流入性質。同時，由於 球狀氧化贿球狀二氧切的靜電交互作用，因此能夠抑 妨礙熱傳導的各種空洞，如未充填空洞、夾帶空洞或揮發 二’同寺’而得到高的熱傳導率。 【0019】 鹼丨生化合物⑼只要是能夠將樹脂組成物的值往較呈驗性 =方向移動即可，沒有特別地限定。例如可列舉出：己胺、 等的l·贿類、二丙胺、二丁胺、異丙基雜、二己胺、二 文一環己胺、一苯胺、二苄胺、二癸胺等的2級胺類、亞胺 201239026 基一乙醇、乙基胺基乙醇、異丙胺基乙醇、苄基乙醇胺、二 ，基乙醇、2一胺基—2一乙基一1，3一丙二醇、異丙ΐ胺土、 ，土丙醇、乙醇胺、胺基丙醇、己醇胺、胺基乙氧基乙醇、 4起？基胺基甲鱗的！級、2級、3級絲醇類、Ν 3 胺丙基甲基二甲氧基魏、Ν_2_(胺乙 & - ΐ: N3:2:(，f—3-胺丙基三乙氧基魏、 ，土矽N (1,3 _—甲基—亞丁基）丙胺及其部分水解 氧基Γ基香〇,3 —二甲基-亞丁基）丙胺及其部分水解 本土一3一胺丙基三甲氧基矽烷等各種鹼性偶聯劑、1 8 _一 = 7[5·4』]十-碳|烯陶或其鹽類、i 雜8雙; [4, 3· 0]壬-5-烯(DBN)或其鹼鹽等的鹼性物質。 雜i，8:二氮雜雙環[5·4. 0]十一碳-7—烯⑽U)或其鹽 :且二66，τΓ"Τ氮雜雙環[4. 3. °]壬烯⑽N)或其鹽類，使相"旨 、、成物的pH值往驗性移動的效果較高，為較 【0020】 值往ί ίΪΤί量’只要是能触樹齡祕全體的邱 多動即可，沒有特別的限定，較佳的情況是 於树月曰組成物中為〇· 005質量％以上丨.〇 【0021】 ^ h ⑻、樹餘絲中，除縣樹脂(A)、硬化劑 irvft求使各種添加劑’如密封助劑、分散劑、參 千片K leveling agent)等。又，因加入兮堃、以此二憎rA、—At A 封樹脂組成物的pH健成7添加物而料液㈣ W ^ uT 下彳，可以適當地加人驗性化合物 ()，藉以維持本發明的效果。 本發明液態密封樹脂組成物，可 機、兩触機、擂潰機縣星式娜機、三親 混練後，在射分及添加劑加以分散The method of 决 并不 并不 并不 并不 并不 ί ί ί ί 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石 石Pre-treatment, add "μ addition agent, increase the operation of heating or cooling. In the test ΤιΓ, the liquid sealing resin composition of Q·°Bu G.lml was placed in a pH ί, and 2 ml of pure water was added thereto as a sample. However, the oblique sensing portion or the like covers the entire object and is allowed to stand until the PH value indicated by the pH is used as the pH of the liquid sealing resin composition. The case where the compounding is more ambiguous is that the liquid sealing resin and the composition of the present invention contain an inspective engraving compound and a liquid sealing resin composition, so that the resin composition is allowed to fall and the pH value moves in the direction of the inspection. This causes the spherical oxidation and the spherical surface potential to change more negatively, which can improve the chemical composition of the resin composition and lower the viscosity, thereby improving the gap inflow property. At the same time, due to the spherical oxidation brittle dioxin The electrostatic interaction can therefore inhibit various voids of heat conduction, such as unfilled voids, entrained voids, or volatilized two 'Tongsi' to obtain high thermal conductivity. [0019] Alkali-producing compound (9) as long as it is capable of resin composition The value of the value is not particularly limited as long as it is moved in the direction of the testability = direction, for example, hexylamine, etc., brib, dipropylamine, dibutylamine, isopropylidene, dihexylamine, and a secondary amine such as hexylamine, monoaniline, dibenzylamine or diammonium, imine 201239026, monoethanol, ethylaminoethanol, isopropylaminoethanol, benzylethanolamine, diethanol, 2 Amino group —2-ethyl-1,3-propanediol, isopropylammonium, terfenol, ethanolamine, aminopropanol, hexanolamine, aminoethoxyethanol, 4-amino-amine-scale !, grade 2, grade 3 silk alcohol, Ν 3 amine propyl methyl dimethoxy Wei, Ν 2 _ (amine B & - ΐ: N3: 2: (, f - 3-aminopropyl triethoxy Kewei, , soil N (1,3 _-methyl-butylidene) propylamine and its partially hydrolyzed oxyalkyl sulfonium, 3-dimethyl-butylene) propylamine and its partially hydrolyzed native 1,3-amine Various basic coupling agents such as propyltrimethoxydecane, 1 8 _1 = 7 [5·4 』] dec-carb | olefin or its salts, i miscellaneous 8 pairs; [4, 3· 0] 壬a basic substance such as -5-ene (DBN) or an alkali salt thereof. Miscellaneous i, 8: diazabicyclo[5·4. 0]undec-7-ene (10)U) or a salt thereof: and 260, τΓ"Τazabicyclo[4. 3. °]decene (10)N) or its salts, so that the pH value of the phase " ί ί ΪΤ 量 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 只要 005 005 005 005 005 005 005 005 005 005 005 005 005 005 005 005 005 005 005 005 005 005 005 %以上丨.〇[0021] ^ h (8), in the tree silk, in addition to the county resin (A), hardener irvft to make various additives 'such as sealing auxiliaries, dispersants, thousands of K leveling agent). By adding yttrium, the pH of the resin composition of the two 憎rA, -At A sealing composition is added to the liquid (4) W ^ uT 彳, and the compound () can be appropriately added to maintain the present Effect of the Invention The liquid sealing resin composition of the present invention can be dispersed in the shots and additives after the machine, the two-touch machine, the smashing machine, the star-type machine, and the three-parent mixing.
S 11 201239026 【0023】 於本發明的液態密封樹脂組成物，從縮短 處理的時間，以及減少對於半導_置的熱應 r率以下2小時以下的硬化條件 上述理由是因為：反應率若為95%以上時，由於 致的後硬化導致玻璃轉移溫度(Tg)或破壞韋刃性值&勿性 少，翹曲或剝離等對於半導體裝置的不利影響減少。〕物性改.艾 在此，所謂硬化是指藉由環氧樹脂的熱^化^ 狀結構’其反應率⑺是以DSC(差分掃描熱量測定)來焱= 而言，測量未硬化之樣品的發熱量_/ )與 之 ^ 熱量_/mg)後，利用Υ(%Μ1—Β/Α)_ _算式 的^熱量如下測定咖製平底_量、並加^^二』 Γ/ 30^300^ L/min的升，廉铩件進仃測疋，取得橫軸為溫度 的，並m_之基料底邊，求得反應峰2 【0024】 接著，針對本發明之半導體裝置加以說明。 得。本發日狀轉默題上述的絲密峨脂組成物來製 例如，若針對覆晶連接的情形加以說明時，首先 1的^體^件2與基板，通過回焊裝置後進行焊ϊ。^體 ^^圖i⑷及⑻所示，在設於半導體元件2的=凸塊， 焊逹接名其七a上酼後，如圖Kd)所示，將半導體元件2回 物5 ίίίϊϋ : Ϊ著’如圖1⑻所示，將液態密封樹脂組成 :用板4間的間隙。填充方法-般採行 减分杜> 象的方去。具體而言，可列舉出以下方法，在半導 ^ 埕塗佈上述液態密封樹脂纟且成物後，利用毛細管現象S 11 201239026 [0023] The liquid sealing resin composition of the present invention has a curing condition of less than 2 hours from the time of shortening the treatment and reducing the heat rate of the semiconductor to be less than 2 hours because the reaction rate is When it is 95% or more, the glass transition temperature (Tg) or the damage edge value is less due to post-hardening, and the adverse effects on the semiconductor device such as warpage or peeling are reduced. 〕 Property change. Ai here, the term "hardening" refers to the heat-chemical structure of the epoxy resin. The reaction rate (7) is measured by DSC (differential scanning calorimetry), and the unhardened sample is measured. After the calorific value _ / ) and ^ ^ _ / mg), use the Υ (% Μ 1 - Β / Α) _ _ formula ^ heat as follows to determine the coffee flat bottom _ amount, and add ^ ^ two Γ / 30 ^ 300 ^ L / min rise, the low-cost component is measured, the horizontal axis is the temperature, and the base of the m_ base is obtained, and the reaction peak 2 is obtained. [0024] Next, the semiconductor device of the present invention will be described. Got it. For example, when the case of the flip chip connection is described, the first body member 2 and the substrate are first soldered by the reflow soldering apparatus. ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ As shown in Fig. 1 (8), the liquid sealing resin is composed of a gap between the plates 4. The filling method - the general method of subtracting the scores of the > Specifically, the following method may be employed, in which the liquid sealing resin is applied to the semiconductor and the film is formed by capillary action.
12 S 201239026 二!!士工，件與基板間的間隙；在半導體元件之兩邊塗佈 讀繼組成物後’利用毛細管現象而流入於半導體元 而流入於半導體元件與基板間的間隙等。：用 =述^密封樹脂組成物硬化。硬化條件沒有特獅限定真= ί Γ fc〜17(rc的溫度範圍加熱1〜12小時來加以硬化。此 』，也'^是例如在1Q(rc加熱i ^、時後，接著在⑽。C加敎 時，以階段地使溫度變化的狀態進行·加熱硬化。 … ^Γθ1 ^ 【0025】 如此的半導體裝置可以列舉：覆晶方式半導體裝置、㈤切 RrlrR^ rGA(BaU Grid Array) ' P0P(Packa^e on Package)^ BGA(Ball Grid Array) >TAB(Tape Automated Bonding)^ BGA(Ball Grid Array)、CSP(Chip Scale Package)等。 [實施例] 【0026】 以下，基於實施例及比較例，更詳細地說明本發明，但 明不限定於該些實施例。 x (實施例1〜8)(比較例卜3) 一#將如下述之環氧樹脂(A)、硬化劑（B)、為球狀氧化鋁和球狀 二氧化矽之混合物的無機填充材料(c)、鹼性化合物（D)、及直他 稀釋溶劑和密封_，以表丨所示組合加以摻合，用三城^其 充分混練分散後，進行真空脫泡而製得液態密封樹脂組成物。^ 且，驗性化合物與稀釋溶劑是在室溫預先加以混合。 【0027】 〇環氧樹脂(A) 大曰本油墨化學工業（股)製(EXA-830LVP) 201239026 曰本環氧樹脂(股）製（JER-630) 〇硬化劑（B) 曰本化藥（股）製(Kayahard AA) 〇無機填充材料(C) 鲁球狀氧化鋁填料12 S 201239026 II!! The gap between the workpiece and the substrate; after the application of the read composition on both sides of the semiconductor element, the capillary element flows into the semiconductor element and flows into the gap between the semiconductor element and the substrate. : The sealing resin composition is hardened with =. The hardening condition is not limited to the true lion = ί Γ fc ~ 17 (the temperature range of rc is heated for 1 to 12 hours to harden. This is also, for example, at 1Q (rc heating i ^, then, then at (10). When C is twisted, the temperature is changed in a stepwise manner and heat-hardened. ^ Γ θ1 ^ [0025] Examples of such a semiconductor device include a flip chip type semiconductor device and (5) a RrrR^rGA (BaU Grid Array) 'POP (Packa^e on Package)^BGA(Ball Grid Array)>TAB(Tape Automated Bonding)^BGA(Ball Grid Array), CSP(Chip Scale Package), etc. [Embodiment] [0026] Hereinafter, based on the embodiment The present invention will be described in more detail with reference to comparative examples, but it is not limited to the examples. x (Examples 1 to 8) (Comparative Example 3) A # epoxy resin (A) and a hardener as described below (B) an inorganic filler (c), a basic compound (D), and a direct dilution solvent and a seal _ which are a mixture of spherical alumina and spheroidal cerium oxide, and blended in the combination shown in Table 丨After the three cities are fully mixed and dispersed, vacuum defoaming is performed to obtain a liquid sealing resin composition. The compound and the diluent solvent are preliminarily mixed at room temperature. [0027] 〇 Epoxy resin (A) Otsuka ink industry (EXA-830LVP) 201239026 曰 Epoxy resin (stock) system (JER) -630) 〇 hardener (B) 曰 化 ( (Kayahard AA) 〇 inorganic filler (C) ruthenium alumina filler
Admatechs(股)製(AO-502 :平均直徑 0. 7/zm) 昭和電工(股)製(CB-P02:平均直徑2· 0/zm) 籲球狀二氧化矽填料 Admatechs(股）製(SO-E3:平均直徑 Ιμπι) Admatechs(股)製（SO-E5:平均直徑 1. 5/zm) 〇驗性化合物(D) 1，8 -二氮雜雙環(5. 4.0)十一碳-7-烯(DBU) DBU-苯酚鹽 San-Apro(股）製 U-CAT(SA-l) 1，5-二氮雜雙環(4. 3.0)壬-5-烯(DBN) 〇稀釋溶劑 丁基賽珞蘇乙酸酯（BCSA) 〇密合助劑 信越化學（股）製(KBM-403) 【0028】 [表1] 14 201239026 實 施例 比較例 3 4 丄 丄 7 _ 8 1 2 3 J.2 8.5 8.5 8.5 8.5 J.5 8.5 8.5 8.5 7.2 8. 5 8.5 8.5 8.5 Λ5 8.5 8.5 8.5 7.6 9. 0 9. 0 9.0 9. 0 J.0 9.0 9.0 9.0 77 73 73 73 73 73 73 73 73 33.5 39.5 39.5 39.5 73.0 39.5 39.5 _39.5 43. 5 一 33.5 33.5 33.5 73.0 33.5 33.5 33.5 0.02 0.02 0.02 η收 0.02 一 0.02 - — 0.02 0.38 0.38 0. 38 0. 38 0.38 ，0.38 0.38 0.38 0.40 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 10 10 10 8 11 7.5 10 10 7 摻合表（重量％) 環氧樹脂（A) 硬化劑（B) EXA-830LVP JER-630 Kayahard AA 無機填充劑含量 氧化鋁 AO-502 無機填充 材料（C) 氧化矽 驗性化合物（D)Admatechs (share) system (AO-502: average diameter 0. 7/zm) Showa Denko (share) system (CB-P02: average diameter 2·0/zm) 球 spherical cerium oxide filler Admatechs (share) system ( SO-E3: average diameter Ιμπι) Admatechs (stock) system (SO-E5: average diameter 1. 5 / zm) test compound (D) 1,8-diazabicyclo (5. 4.0) eleven carbon - 7-ene (DBU) DBU-phenolate San-Apro (unit) U-CAT (SA-1) 1,5-diazabicyclo (4. 3.0) 壬-5-ene (DBN) 〇 dilution solvent赛赛珞苏 acetate (BCSA) 〇 助剂 助剂 信 信 化学 ( (KBM-403) [0028] [Table 1] 14 201239026 Example Comparative Example 3 4 丄丄7 _ 8 1 2 3 J .2 8.5 8.5 8.5 8.5 J.5 8.5 8.5 8.5 7.2 8. 5 8.5 8.5 8.5 Λ5 8.5 8.5 8.5 7.6 9. 0 9. 0 9.0 9. 0 J.0 9.0 9.0 9.0 77 73 73 73 73 73 73 73 73 33.5 39.5 39.5 39.5 73.0 39.5 39.5 _39.5 43. 5 a 33.5 33.5 33.5 73.0 33.5 33.5 33.5 0.02 0.02 0.02 η 0.02 0.02 - 0.02 0.38 0.38 0. 38 0. 38 0.38 , 0.38 0.38 0.38 0.40 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 0.6 10 10 10 8 11 7.5 10 10 7 Table (wt%) Epoxy resin (A) a curing agent (B) EXA-830LVP JER-630 Kayahard AA inorganic filler is alumina AO-502 content of the inorganic filler material (C) a silicon oxide test compound (D)
pH値 【0029】 (測定及評價） ' 測定得封樹脂組成物及半導體裝置，進行以下之 冽疋及砰仏。所付之結果如表2所示。 【0030】 1、 pH值之測定 正後if 封「樹脂組成物’置於預先使用校正液校 約=期部，從其上加入純水 被檢體覆蓋，關閉感測部的宴子，並 ^使感測邛王胆pH 値 [0029] (Measurement and evaluation) ' The resin composition and the semiconductor device were measured, and the following were used. The results paid are shown in Table 2. [0030] 1. After the pH value is measured, the "resin composition" is placed in the pre-use calibration liquid calibration = period, the pure water is added to the sample, and the feast of the sensing part is turned off. ^ Make sense
讀佶’raas-AA 亍加以置直到顯示穩定的pH 【53 P作為液態密封樹脂組成物的pH值。 2、 熱傳導率的測定及評價 =對各液態密封樹脂組成物，在15()。〇環境氣體 所付的硬化物的熱擴散率α、密度p及比熱Cp ’以下述g法，分 別加以測定並求得後，依下式（1)計算熱傳導率又。 彳 s 15 201239026 熱擴散率α是使用熱擴散率測定裝置LFA447 Nanoflash (NETZSCH公司製）’以依據JIS R 1611J011(最小平方法）的雷射 閃光法來加以測定。密度p是以依據JIS K 7112A法的水中置換 法來加以測定。比熱Cp是使用差分掃描熱量計 DSC7(PERKIN-ELME：R公司製），以依據JIS K 7123的方法來測定。 針對熱傳導率的評價，熱傳導率值為〇· 8W/m.K以上者判定為 良好，低於0. 8W/m·!(者判定為不可。 λ = axpxCp ...........式⑴ λ :熱傳導率(W/m*K) -從：熱擴散率(m2/sec) . P :密度(kg/m3)Read 佶'raas-AA and place it until it shows a stable pH [53 P as the pH of the liquid sealing resin composition. 2. Measurement and evaluation of thermal conductivity = for each liquid sealing resin composition, at 15 (). The thermal diffusivity α, the density p, and the specific heat Cp' of the cured product to be treated with the ambient gas are measured and determined by the following g method, and then the thermal conductivity is calculated according to the following formula (1). s s 15 201239026 The thermal diffusivity α is measured by a laser flash method using a thermal diffusivity measuring device LFA447 Nanoflash (manufactured by NETZSCH Co., Ltd.) in accordance with JIS R 1611J011 (least flat method). The density p is measured by an underwater displacement method in accordance with JIS K 7112A. The specific heat Cp was measured by a method according to JIS K 7123 using a differential scanning calorimeter DSC7 (PERKIN-ELME: manufactured by R Corporation). For the evaluation of the thermal conductivity, the thermal conductivity value is 〇·8 W/mK or more, and it is judged to be good, and is less than 0.8 W/m·! (It is judged as not possible. λ = axpxCp ........... Formula (1) λ : Thermal conductivity (W/m*K) - From: Thermal diffusivity (m2/sec) . P : Density (kg/m3)
Cp :比熱(J/kg.K) 【0032】 3、 介電率的測定及評價 針對^各液態密封樹脂組成物，以依據贝3 κ 6911的方法，測 定在150 C的環境氣體下加熱2小時所得的硬化物（直徑5〇咖 度3腿)於測定頻率ιΜΗζ的介電率。 超過3=評價，介電率為5以下者判定為良好’介電率 【0033】 4、 間隙流入性質 軌，ί』6右系助焊劑劑(KeSter公司製_-6_加 四方的ΐ物树個之料凸塊的15mm 表面鍍金），勒雙馬來酿亞胺三嗪基板、連接焊墊： 的門隙為如 接合’而得到半導體元件與基板間 皮4¾查所狀半導體裝置，沒有未填充部者判Cp: specific heat (J/kg.K) [0032] 3. Measurement and evaluation of dielectric constant For each liquid sealing resin composition, the heating is performed under ambient gas of 150 C in accordance with the method of Bay 3 κ 6911. The hardened material (5 angstroms and 3 legs in diameter) obtained in the hour was measured at the dielectric constant of the frequency ιΜΗζ. More than 3 = evaluation, the dielectric ratio is 5 or less, and it is judged as good 'dielectric rate [0033] 4. Gap inflow property rail, ί』6 right-hand flux (KeSter _-6_ plus tetragonal sputum The 15mm surface of the bumps of the tree is gold-plated), the double-branched Malay-imide triazine substrate, and the connection pad: the gate gap is the junction of the semiconductor element and the substrate, and the semiconductor device is not inspected. Unfilled
S 16 201239026 U未填充部者判定為不可 [表2] 熱傳導率 介電率 5.0— 良好|良好 實- 包例 —---- t 4— _5 6 7 8 Μ 0.8 0.8 0.8 0.8 1.0 ' .,4.5 5.0 5. 〇 5.0 5.0 5.0 6.0 ' ]_良1 良好 良好 良好 良好 良好 良好 r^較例 良好 0.6 間隙流入性質 [產業上利用性]【_】 F曰以提供—種兼具高熱傳導率、低介電率及古 ^日二2的液態密封樹脂組成物。以及可以利用在製得使^ 該組成物的半導體裝置。 f使用 二?ϊ本發明，可以提供—種能夠以低消減、安定地 回速動作的半導體裝置。 5.0 不可 圖式簡單說明】【0009】 圖l(a)〜(e)顯示本發明半導體裝置製造方法之〆 圖2顯示本發明半導體裝置的概'略圖' 例的步驟。 【主要元件符號說明jj 1、 焊料凸塊 2、 半導體元件 3、 助焊劑 4、 基板 5、 液態密封樹脂組成物 s 17S 16 201239026 U Unfilled part is judged as not [Table 2] Thermal conductivity dielectric ratio 5.0 - good | good real - package case - t4 - _5 6 7 8 Μ 0.8 0.8 0.8 0.8 1.0 ' ., 4.5 5.0 5. 〇5.0 5.0 5.0 6.0 ' ]_good 1 Good good good good good good good r^ good case 0.6 gap inflow property [industrial availability] [_] F曰 provides both high thermal conductivity, A low dielectric constant and a liquid sealing resin composition of the ancient two. And a semiconductor device in which the composition is produced can be utilized. f Using the present invention, it is possible to provide a semiconductor device capable of operating at a low speed and stably returning speed. 5.0 (1) to (e) show a method of manufacturing a semiconductor device of the present invention. Fig. 2 shows a step of an example of a schematic diagram of a semiconductor device of the present invention. [Main component symbol description jj 1, solder bump 2, semiconductor component 3, flux 4, substrate 5, liquid sealing resin composition s 17
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| KR20150136014A (en) | 2014-05-26 | 2015-12-04 | 닛신 가가꾸 고교 가부시끼가이샤 | Ink composition |
| JP2021190440A (en) * | 2020-05-25 | 2021-12-13 | ソニーセミコンダクタソリューションズ株式会社 | Semiconductor device, manufacturing method thereof, and electronic apparatus |
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| JPS598722A (en) * | 1982-07-07 | 1984-01-18 | Mitsubishi Electric Corp | Liquid epoxy resin composition for sealing semiconductor |
| JPH01109753A (en) * | 1987-10-23 | 1989-04-26 | Hitachi Ltd | Semiconductor device |
| JP3649524B2 (en) * | 1995-07-10 | 2005-05-18 | 住友ベークライト株式会社 | Epoxy resin composition and semiconductor device |
| US20030087992A1 (en) * | 2000-10-24 | 2003-05-08 | Eiki Togashi | Epoxy resin composition and its use |
| JP2004018790A (en) * | 2002-06-19 | 2004-01-22 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2008274083A (en) * | 2007-04-27 | 2008-11-13 | Shin Etsu Chem Co Ltd | Liquid epoxy resin composition and semiconductor device |
| JP2009155550A (en) * | 2007-12-27 | 2009-07-16 | Sekisui Chem Co Ltd | Insulating material, method for manufacturing electronic component device, and electronic component device |
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| CN105073883A (en) * | 2013-03-28 | 2015-11-18 | 三菱化学株式会社 | Composition for interlayer filler of layered semiconductor device, layered semiconductor device, and method for manufacturing layered semiconductor device |
| CN105073883B (en) * | 2013-03-28 | 2018-04-17 | 三菱化学株式会社 | The manufacture method of the interlayer filler material composition of lamination type semiconductor device, lamination type semiconductor device and lamination type semiconductor device |
| TWI629305B (en) * | 2013-03-28 | 2018-07-11 | 三菱化學股份有限公司 | Composition for interlayer filler of laminated semiconductor device, laminated semiconductor device, and method for manufacturing laminated semiconductor device |
| US10125289B2 (en) | 2013-03-28 | 2018-11-13 | Mitsubishi Chemical Corporation | Composition for interlayer filler of layered semiconductor device, layered semiconductor device, and process for producing layered semiconductor device |
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