201236515 六、發明說明： 【發明所屬之技術領域】 本發明有關一大氣電漿產生器，且更特别地係，關於— 大氣電漿產生器’其中高電壓電極是以多層形式提供，以 致一連串的連續電漿反應’藉此使電漿的產生最大化，v 其中高電壓為選擇性施加至高電壓電極的個別層，夢’ f; 電漿密度。 5 m 【先前技術】 在半導體或LCD的製造中，需要在大氣壓力產生 基材處理，諸如蝕刻、灰化、剝離等 电水供 不過’一傳統大氣電衆產生器的缺點在於產生器兩 2極。而且，當-目標基材具大面積時，需要增 的電極尺寸供電漿處理。對於包括複數個電極的傳統二 而言，不容易彼此耦合複數個大電極的結構； =— 對於能夠處理大面積目標之電漿頭。 子在者 此外’所屬技術領域專業人士應明白，由於大氣壓 產生的電漿密度不足以進行晶圓或基材的灰 飩 離’所以傳統大氣電漿產生器不能夠用於灰化、_或^離剝 統大氣電襞產生器的問題在於電聚密度是由電 漿頭決疋，且不能被控制。 疋田电 【發明内容】 -大的多；=例提供 連串的連續電供二 電壓選擇性施加至高電壓電極的_層，藉此控制電 4 100117665 1003264861-0 201236515 根據一態樣，一士 g命將Α 一入口埠，經由发开大 水產生器包括：一外罩，其具有 在該外罩/人反應氣體；複數個高電壓電極，其 式提供；複數個介電體，其分別封入 的高電壓至高電壓電極； 屋，電壓及施加该產生 構件之每-者的任-側；及-鄰該等介電體 反應氣體產生的電I 密度。 以控制施加高電壓至 2控制益可控制高電壓，以 該等高電壓電極在每層上能以多列配置 3亥控制器可括在I丨宜Φ麻·，、，、BB 1 個別層。 ㈣絲^麵電極的 Ο Ο 個別^制器可控制高電壓’以選擇性施加至高電㈣極的 該測用以測量電聚密度及傳送 複數個電壓電極可插入該等介電體構件 垂直;㈡極可在該等介電體構件之每—者的任一側，以 包該介電體構件的最高層上或最低層下可更 該介電體構件包括：H其 ^圓截面與一特定 ^電體構件具有-通孔，經由該通孔插人高電壓電 該地電;B i Pm 件的曲度^具有―半圓凹槽，其曲度則與11截面介電體構 【實施方式】 長度 極 100117665 1003264861-0 201236515 本發明的示紐具體實施例現將參考_詳細描述。 請即參考圖1至3,根據第一具體實施 產生器包括：一外罩⑽，其具有一入口二m ，、一氣體緩衝器(20)、·一氣體供j) 反應氣體係透過人口槔注人產生器。出口 ϊ由出在基材電漿處理期間產生的揮發：氧化 &有1體供應孔⑼，以供應從氣體緩衝器㈣供應的氣 體Λ卜一反應太器⑽）’其中高電壓施加至反應氣 體’以供電衆反應’且產生的電衆施加至_目標基材§ 應器（100)包括高電壓電極⑽）、介電體構件⑽）、 壓產生器（140)、與地電極（13〇)。 電 在此具體實施例中，高電壓電極⑽)具有圓截面的類似 ’複數個高電壓電極係以多列（12〇a， 與多層⑽，122andi23)配置。因 此，藉由調整長度與高電壓電極（11〇)的配置， 供使用在不同基材尺寸。 王 南電壓電極（110)插入介電體構件（12〇)，且高電壓產生 器（140)施加$電壓至高電壓電極（11〇)。地電極(13〇)垂直配 置在介電體構件（120)與高電壓電極（11〇)的任一側。 一控制器（150)的提供係將高電壓產生器（14〇)產生的高 電壓選擇性施加至高電壓電極(11())的個別層。—感測器（未 在圖顯示）更進一步提供測量電漿密度。 第一具體實施例的操作現將參考圖丨描述。首先，當通 過氣體緩衝器（20)與氣體供應板⑽時，—反應氣體經由入 100117665 6 1003264861-0 201236515 口埠（11)注入，然後充分擴散。擴散的反應氣體供應給反應 器（100)，其中高電壓施加至反應氣體，以透過電漿反應產生 電漿。產生的電漿經由外罩（10)低表面上的一電漿出口（40) 傳送至基材S，以執行電漿處理。 特別地係’當反應氣體通過第一、第二與第三高電壓電 極時，第一期、第二期與第三期電漿反應可由位於最上層的 第一高電壓電極（111)、位於中央層的第二高電壓電極 (112)、及位於最低層的第三高電壓電極（H3)連續產生。因 此’電漿反應可一連串續連實施，以使電漿產生最大化。 Ο 此外，控制器（150)可控制高電壓，使得高電壓施加至第 一至第三高電壓電極（111-113)的全部；或者，高電壓選擇性 只施加至高電壓電極的一或兩層。因此，電漿密度可由此操 作控制。 此外，由於此具體實施例更包括用於測量產生電漿密度 的感測器，所以電漿密度可藉著將測量結果從感測器傳送至 控制器而有效控制。 圖4顯示根據本發明第二具體實施例的一反應器（2〇〇)。 相較於根據第一具體實施例的反應器（100)，可看出，複數個 ❹ 高電壓電極(210)插入在多層上提供的個別介電體(22〇、 221、222、223)。而且’地電極（230)垂直配置在介電體構件 (220)的任一側。其他未說明的組件則與第一具體實施例相 同，且同樣省略描述。 圖5顯示根據本發明第三具體實施例的一反應器（3〇〇)。 相較於根據第一具體實施例的反應器（100) ’可看出，一地電 極(330)具有一半圓凹槽(331)，其曲度與圓截面介電體構件 (320: 321，322及323)相同。而且’複數高電壓電極(31〇)被 插入於電體構件(320)中。根據此具體實施例的反應器的其他 組件則與第一具體實施例的組件相同，且如此省略詳細描 100117665 1003264861-0 7 201236515 述。 =6顯示根據本發明第四具體實施例的一反應器（4〇〇)。 二物二具體實施例的反應器（〗00)具有三層介電體構件 i人)二咼電壓電極（uo)，但可看出第四具體實施例包括四 :/丨電體構件（420: 421，422, 423及424)與高電壓電極 U在此情況，電漿反應更進一步活化提高電漿密度。因 必，尚電壓電極可根據處理情況選擇性地兩或多層上提供。 二亦可看出，一地電極(43〇)更具有在介電體構件 、最尚層上、及在介電體構件(424)的最低層下的水平 ，^(431、432)。上延伸(431)形成一孔(Μ)，反應氣體可經 孔通過，且下延伸(432)形成一孔(h2)’電漿則經由該孔 通過。 根據具體實施例，高電壓電極是以多層形式提供，以導 致一連串、連續的電漿反應，藉此提高電漿的產生。' 特別地係，根據具體實施例，高電壓選擇性施加至高電 壓電極的個別層，藉此可控制電漿密度。 此外，高電壓電極係類似圓柱形狀，且為多列形式配 置，所以根據具體實施例的電漿產生器可有效地處理基材尺 寸的增加。 雖然在此已描述一些具體實施例，但所屬技術領域專業人士 應明白，這些具體實施例只是說明，且可做各種不同修改、 改變及變更，不致悖離本發明的精神與範嘴。本發明的範缚 應侷限於文後申請專利範圍及同等物。 【圖式簡單說明】 本發明的上述及其他態樣、特徵與致益可從下面具體實 施例連同附圖的描述而變得更明白，其中： 〃 ' 圖1為根據本發明第一具體實施例的大氣電浆產生器側 100117665 1003264861-0 8 201236515 視圖， 圖2為根據本發明第一具體實施例的大氣電漿產生器前 視圖； 圖3為根據本發明第一具體實施例的大氣電漿產生器平 面圖；及 圖4至6為根據本發明其他具體實施例的一反應器的主 要部份圖。 【主要元件符號說明】201236515 VI. Description of the Invention: [Technical Field] The present invention relates to an atmospheric plasma generator, and more particularly to an atmospheric plasma generator in which a high voltage electrode is provided in a plurality of layers such that a series of The continuous plasma reaction ' thereby maximizing the generation of plasma, v where the high voltage is selectively applied to individual layers of the high voltage electrode, Dream' f; plasma density. 5 m [Prior Art] In the manufacture of semiconductors or LCDs, it is necessary to produce substrate treatment at atmospheric pressure, such as etching, ashing, stripping, etc., but the disadvantage of a conventional atmospheric electricity generator is that the generator 2 2 pole. Moreover, when the target substrate has a large area, an increased electrode size is required for the power slurry treatment. For the conventional two including a plurality of electrodes, it is not easy to couple a plurality of large electrode structures to each other; = - for a plasma head capable of handling a large-area target. In addition, the skilled person should understand that the conventional atmospheric plasma generator cannot be used for ashing, _ or ^ because the plasma density generated by atmospheric pressure is not sufficient for the ash separation of the wafer or substrate. The problem with the stripping atmospheric electricity generator is that the electrical density is determined by the plasma head and cannot be controlled.疋田电 [Inventive content] - Larger; = Example provides a series of continuous power supply two voltages selectively applied to the _ layer of the high voltage electrode, thereby controlling the electricity 4 100117665 1003264861-0 201236515 According to one aspect, one g An inlet 埠, through the opening of the large water generator includes: a cover having the outer cover/human reaction gas; a plurality of high voltage electrodes provided in the form; a plurality of dielectric bodies each sealed high a voltage-to-high voltage electrode; a house, a voltage, and any side of each of the generating members; and - an electrical I density produced by the reactive gases of the dielectrics. The high voltage can be controlled by controlling the application of a high voltage to 2 control, and the high voltage electrodes can be arranged in multiple columns on each layer. The controller can be included in the individual layers of I, Φ, 、, BB 1 . (4) Ο 丝 丝 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别 个别(2) The dielectric member may be further included on either side of each of the dielectric members to cover the highest layer or the lowest layer of the dielectric member: H and its cross section and The specific electrical component has a through hole through which a high voltage is applied to the ground; the curvature of the B i Pm component has a semicircular groove, and the curvature is compared with the 11-section dielectric structure. Mode] Length pole 100117665 1003264861-0 201236515 The specific embodiment of the present invention will now be described with reference to the detailed description. Referring to Figures 1 to 3, the generator according to the first embodiment comprises: a housing (10) having an inlet two m, a gas buffer (20), a gas for j), a reaction gas system through the population. Human generator. The outlet ϊ is derived from the volatilization generated during the plasma treatment of the substrate: oxidation & has a body supply hole (9) to supply a gas supplied from the gas damper (4), and a high voltage is applied to the reaction. The gas 'is reacted to the power supply' and the generated electricity is applied to the target substrate (100) including the high voltage electrode (10), the dielectric member (10), the pressure generator (140), and the ground electrode (13). 〇). Electricity In this embodiment, the high voltage electrode (10) has a circular cross-section like a plurality of high voltage electrodes in a plurality of columns (12 〇 a, with multiple layers (10), 122 and i 23). Therefore, by adjusting the length and configuration of the high voltage electrode (11 〇), it can be used in different substrate sizes. The south voltage electrode (110) is inserted into the dielectric member (12 〇), and the high voltage generator (140) applies a voltage to the high voltage electrode (11 〇). The ground electrode (13 〇) is vertically disposed on either side of the dielectric member (120) and the high voltage electrode (11 〇). The supply of a controller (150) selectively applies a high voltage generated by the high voltage generator (14 〇) to the individual layers of the high voltage electrode (11()). - The sensor (not shown) further provides measurement of plasma density. The operation of the first embodiment will now be described with reference to the drawings. First, when passing through the gas damper (20) and the gas supply plate (10), the reaction gas is injected through the inlet (11) of 100117665 6 1003264861-0 201236515, and then fully diffused. The diffused reaction gas is supplied to the reactor (100), wherein a high voltage is applied to the reaction gas to generate a plasma through the plasma reaction. The generated plasma is transferred to the substrate S via a plasma outlet (40) on the low surface of the outer casing (10) to perform a plasma treatment. Specifically, when the reaction gas passes through the first, second, and third high voltage electrodes, the first, second, and third phase plasma reactions may be located by the first high voltage electrode (111) located at the uppermost layer. The second high voltage electrode (112) of the central layer and the third high voltage electrode (H3) located at the lowest layer are continuously generated. Therefore, the plasma reaction can be carried out in succession to maximize plasma production. Further, the controller (150) can control the high voltage such that a high voltage is applied to all of the first to third high voltage electrodes (111-113); or, the high voltage selectivity is applied only to one or two layers of the high voltage electrode . Therefore, the plasma density can be controlled by this operation. Moreover, since this embodiment further includes a sensor for measuring the density of the generated plasma, the plasma density can be effectively controlled by transmitting the measurement result from the sensor to the controller. Figure 4 shows a reactor (2〇〇) in accordance with a second embodiment of the present invention. In contrast to the reactor (100) according to the first embodiment, it can be seen that a plurality of ❹ high voltage electrodes (210) are interposed in individual dielectric bodies (22〇, 221, 222, 223) provided on the plurality of layers. Further, the ground electrode (230) is vertically disposed on either side of the dielectric member (220). Other components not illustrated are the same as those of the first embodiment, and the description is also omitted. Figure 5 shows a reactor (3〇〇) in accordance with a third embodiment of the present invention. As can be seen from the reactor (100)' according to the first embodiment, a ground electrode (330) has a semi-circular recess (331) with a curvature and a circular cross-section dielectric member (320: 321, 322 and 323) are the same. Further, a 'multiple high voltage electrode (31 〇) is inserted into the electric component (320). The other components of the reactor according to this embodiment are the same as those of the first embodiment, and the detailed descriptions of 100117665 1003264861-0 7 201236515 are omitted. = 6 shows a reactor (4〇〇) according to a fourth embodiment of the present invention. The reactor (00) of the specific embodiment has a three-layer dielectric member i) a voltage electrode (uo), but it can be seen that the fourth embodiment includes four: / an electric member (420) : 421, 422, 423 and 424) with the high voltage electrode U. In this case, the plasma reaction is further activated to increase the plasma density. Therefore, the voltage electrodes may be selectively provided on two or more layers depending on the treatment. It can also be seen that a ground electrode (43 〇) has a level on the dielectric member, the most recent layer, and the lowest layer of the dielectric member (424), ^ (431, 432). The upper extension (431) forms a hole through which the reaction gas can pass, and the lower extension (432) forms a hole (h2) through which the plasma passes. According to a particular embodiment, the high voltage electrode is provided in multiple layers to cause a series of continuous plasma reactions, thereby increasing plasma generation. Specifically, according to a specific embodiment, a high voltage is selectively applied to individual layers of the high voltage electrode, whereby the plasma density can be controlled. Further, the high voltage electrode is similar to a cylindrical shape and is configured in a multi-column form, so that the plasma generator according to the specific embodiment can effectively handle the increase in the substrate size. Although a few specific embodiments have been described herein, it will be understood by those skilled in the art that the invention The scope of the invention should be limited to the scope of the patent application and equivalents. BRIEF DESCRIPTION OF THE DRAWINGS The above and other aspects, features, and advantages of the present invention will become more apparent from Example of an atmospheric plasma generator side 100117665 1003264861-0 8 201236515 view, FIG. 2 is a front view of an atmospheric plasma generator according to a first embodiment of the present invention; FIG. 3 is an atmospheric electricity according to a first embodiment of the present invention. A plan view of a slurry generator; and Figures 4 through 6 are diagrams of major portions of a reactor in accordance with other embodiments of the present invention. [Main component symbol description]
S 目標基材 hi > h2 孑L 1 第一具體實施例 10 外罩 11 入口埠 12 出口埠 20 氣體緩衝器 30 氣體供應板 31 氣體供應孔 40 電漿出口 100 反應器 110 高電壓電極 111 第一高電壓電極 112 第二高電壓電極 113 第三高電壓電極 120 三層介電體構件 120a〜120e 歹丨J 100117685 1003264861-0 9 201236515 121、 130、 140 150 200、 210 220、 230 310 320 ' 331 410 420 421 431 432 122 ' 123 層 330、430 地電極 高電壓產生器 控制器 300、400 反應器 高電壓電極 221 ' 222 > 223 介電體 地電極 多重高電壓電極 321、322、323 介電體構件 半圓凹槽 高電壓電極 四層介電體構件 422、423、424 介電體構件 上延伸 下延伸 100117665 1003264861-0 10S target substrate hi > h2 孑L 1 First embodiment 10 Housing 11 inlet port 12 outlet port 20 gas buffer 30 gas supply plate 31 gas supply hole 40 plasma outlet 100 reactor 110 high voltage electrode 111 first High voltage electrode 112 second high voltage electrode 113 third high voltage electrode 120 three-layer dielectric member 120a~120e 歹丨J 100117685 1003264861-0 9 201236515 121, 130, 140 150 200, 210 220, 230 310 320 ' 331 410 420 421 431 432 122 '123 layer 330, 430 ground electrode high voltage generator controller 300, 400 reactor high voltage electrode 221 ' 222 > 223 dielectric ground electrode multiple high voltage electrodes 321, 322, 323 dielectric Body member semi-circular groove high voltage electrode four-layer dielectric member 422, 423, 424 extending over the dielectric member 100117665 1003264861-0 10