201234468 六、發明說明： 【發明所屬之技彳軒領域】 發明領域 刀片切入而將 使旋轉的圓盤 及機械加工方 本發明係有關於一種進行加工使旋轉的 半^體aa圓切割成複數晶片的切割裝置等， 狀加工具切入而加工板狀物的機械加工袭置 法0 【先前技冬好;1 背景技術 设今，已提出一種切割裝置，以旋轉之圓盤 工具）切入矽晶圓（板狀物），將該矽晶圓切割成 片（加 (專利文獻1)。該切割裝置使用洗淨液或冷部水等：的晶片 將含有細微泡沐(微小氣泡）的洗淨液喷至發日。刀削液， 2圓之刀片斜前方附近，並且將冷卻水二 2兩侧面。然後，混在喷至料圓之洗淨液中的細微泡 2於被噴出而破裂，產生超音波。藉由如上所產生的超 :凌的振動，使矽塵不容易附著於矽晶圓，並且可讓已附 著之矽塵浮起而容易沖掉。 先行技術文獻 專利文獻 專利文獻1 ·日本發明公開公報2003_68677號 C聲明内容】 發明揭示 發明欲解決之課題 201234468 如前所述，包含在切削液中之細微泡沫具有如下各種 機能：藉由其破裂所產生的超音波振動，使塵埃不容易附 著於矽晶圓等板狀物表面，或者可附著於塵埃使之容易浮 起等；不過，細微泡沫因其大小而有不同性質。例如，微 氣泡等較大尺寸之細微泡沫使塵埃浮上的浮上機能較強， 又，以該細微泡沫排除液體（切削液）的效果較高（空隙率較 高）。另一方面，超微氣泡或奈米氣泡等大小較小的細微泡 沫可侵入較多狹窄間隙，而在該等狹窄間隙内發揮其機能。 但是，在前述之習知切割裝置中，並未特別考慮到包 含在切削液中之細微泡珠尺寸，含有細微泡沫的切削液並 無法更有效地利用於使用刀片（加工具）的板狀物加工。 本發明係有鑑於上述情形而發明者，提供一種機械加 工裝置及機械加工方法，可將包含細微泡沫之切削液更有 效地利用於使用加工具的板狀物加工。 用以解決課題之手段 本發明之機械加工裝置，係使旋轉之圓盤狀加工具切 入而加工板狀物者，前述機械加工裝置具有：第1機構，係 對於旋轉之前述加工具對前述板狀物之切入側的端面，喷 附包含細微泡沫之第1切削液者；及第2機構，係對於旋轉 之前述加工具兩側面的至少一面，喷附包含細微泡珠之第2 切削液者，且包含在前述第2切削液之細微泡沫的大小大於 包含在前述第1切削液之細微泡沫的大小。 藉由上述構成，由於將含有較小尺寸之細微泡珠的第1 切削液喷附至切入板狀物之加工具對該板狀物之切入側的 201234468 端面，故細微泡沐可容易進人由前述加工具之切入而形成 於前述板狀物的溝中，可在該切割溝中·細微泡珠的緩 衝作用。結果’可減低加工具與板狀物之間的摩擦而可 防止形成於板狀物之切割溝的邊角缺陷脫落。另-方面， 由於將較前述第__所含之細減沐尺寸 大、含有較大 尺寸之細微泡殊的第2切削液，喷附至切入板狀物之加工具 的兩侧面之至j/ -面’可藉由該第2切削液有效地冷卻加工 〃並噴附至加工具之第2切削液中的細微泡珠雖因該 Θ 之刀。1而難以進人形成在前述板狀物之切割溝，但 藉由透過則述加工具流出至板狀物表面之第2切削液中的 車又大尺寸之减料的作用，可使切眉容易浮上切削液表 ^卩使在則述加工具之較寬的兩側面中至少-面喷 附較多的第2切削液’由於第2切削液中包含較大尺寸的細 微包末故附著於旋轉之加工具的切削液實質密度會變 小，亦可減少旌鳇 疋#之加卫具負載增加的情形。 在本發明之機械加m其中前述加工具切入前 ί板狀物之部分的表面係以細微的研磨粒覆蓋， 且包含在 J述第确'夜之細微泡珠的大小小於前述加工具之相鄰 接之:磨粒與研磨粒之間隙的大小。 一 述構成’由於將含有較小尺寸之細微泡沫的第1 切肖 ^夜喷附至切人板狀物之加卫具切人該板狀物的切入側 的端面進入由前述加工具之切割而形成於前述板狀物之 溝的、’田H未’可容易進人可形成溝之加工具的研磨粒之 間隙故藉由進人該研磨粒間隙之細微泡珠的緩衝作用， 201234468 更可減低加工具與藉由加工具進行加工的板狀物之間的摩 擦。 又，本發明之機械加工裝置中，前述第1機構具有：第 1切削液生成機構，係使液中產生細微泡珠而生成前述第1 切削液者；及第1切削液喷附機構，係將該第1切削液生成 機構所生成之前述第1切削液喷附至前述加工具的端面 者，而前述第2機構具有：第2切削液生成機構，係使液中 產生細微泡沫而生成前述第2切削液者；及第2切削液喷附 機構，係將該第2切削液生成機構所生成之前述第2切削液 喷附至前述加工具的兩側面中至少一面者。 藉由上述構成，由於應被喷附至旋轉之加工具對板狀 物切入側之端面的第1切削液、與應被喷附至前述加工具兩 側面中至少一面的第2切削液，係由個別機構（第1切削液生 成機構、第2切削液生成機構)所生成，故可易於使第1切削 液及第2切削液所包含之細微泡沫大小不同。 此外，本發明之機械加工裝置中，前述第1機構具有： 第1細微泡沫含有液生成機構，係使液中產生細微泡沫而生 成細微泡沫含有液者；及第1切削液喷附機構，係將從該第 1細微泡沫含有液生成機構通過第1通路所供給之細微泡沫 含有液，作為前述第1切削液，喷附至前述加工具的端面 者，前述第2機構具有：第2細微泡沫含有液生成機構，係 使液中產生細微泡沫而生成細微泡沫含有液者；及第2切削 液喷附機構，係將從該第2細微泡沫含有液生成機構通過較 前述第1通路長的第2通路所供給之細微泡沫含有液，作為 201234468201234468 VI. Description of the Invention: [Technology of the Invention] In the field of the invention, the blade is cut into and the rotating disk and the machine are processed. The present invention relates to a process for processing a rotating half-body aa circle into a plurality of wafers. Cutting device, etc., tooling method for cutting a plate into a tool. [Previously good winter; 1 background art, a cutting device has been proposed, which is a rotating disk tool) is cut into a silicon wafer. (Plate), the wafer is cut into pieces (Patent Document 1). The cutting device uses a cleaning liquid, a cold water, or the like: a wafer containing fine bubbles (micro bubbles) Spray to the hair day. The cutting liquid, the 2 round blade is near the front side, and the cooling water will be two or two sides. Then, the fine bubbles 2 mixed in the washing liquid sprayed to the material circle are sprayed and ruptured, resulting in super The sound wave is caused by the vibration of the super: the above-mentioned vibration, so that the dust is not easily attached to the silicon wafer, and the attached dust can be floated and easily washed away. Patent Literature Patent Literature 1 Invention disclosure Publication No. 2003_68677, C. DISCLOSURE OF THE INVENTION PROBLEM TO BE SOLVED BY THE INVENTION 201234468 As described above, the fine foam contained in the cutting fluid has various functions as follows: the ultrasonic vibration generated by the rupture thereof makes the dust less likely to adhere to The surface of a sheet such as a wafer, or it may be attached to dust to make it easy to float, etc.; however, the fine foam has different properties depending on its size. For example, a large-sized foam such as microbubbles causes the floating function of the dust to float. Stronger, the effect of removing the liquid (cutting fluid) by the fine foam is higher (high void ratio). On the other hand, small foams such as ultrafine bubbles or nanobubbles can invade more narrow gaps. However, in the above-mentioned conventional cutting device, the size of the fine beads contained in the cutting fluid is not particularly considered, and the cutting fluid containing the fine foam cannot be more effectively Used in the processing of a plate using a blade (tool). The present invention has been made in view of the above circumstances, and provides a machining device. And the machining method can use the cutting fluid containing the fine foam more effectively in the processing of the plate using the adding tool. Means for Solving the Problem The machining device of the present invention cuts the rotating disc-shaped tool In the case of processing a plate, the machine tool includes: a first mechanism for spraying a first cutting fluid containing fine foam on an end surface of the plated side of the plate to be rotated; and a second The mechanism is configured to spray the second cutting fluid containing the fine beads on at least one of the two sides of the rotating tool, and the size of the fine foam contained in the second cutting fluid is larger than that included in the first cutting fluid. The size of the fine foam. With the above configuration, since the first cutting fluid containing the fine beads of a small size is sprayed to the end face of the cut-in side of the plate, the 201234468 end face of the plate-cutting material, the fine foam The silicone can be easily inserted into the groove of the plate by the cutting tool, and the buffering action of the fine beads can be performed in the cutting groove. As a result, the friction between the tool and the plate can be reduced to prevent the corner defects of the cutting groove formed in the plate from falling off. On the other hand, the second cutting fluid having a larger size and a larger size and containing a larger size than the above-mentioned first __ is attached to both sides of the tool for cutting into the plate to j. / - Surface 'The fine beads which can be effectively cooled by the second cutting fluid and sprayed into the second cutting fluid of the tooling tool are due to the knives. 1 , it is difficult to form a cutting groove in the plate, but the eyebrows can be cut by the large size reduction of the vehicle in the second cutting fluid flowing through the tool to the surface of the plate. It is easy to float the cutting fluid table, so that at least the second cutting fluid that is sprayed on at least one of the wide sides of the wide tool is attached to the second cutting fluid. The actual density of the cutting fluid of the rotating tool can be reduced, and the increase in the load of the Guard # 。 can also be reduced. In the mechanical addition of the present invention, the surface of the portion of the front plate that the cutting tool is cut into is covered with fine abrasive grains, and the size of the fine beads contained in the first night is smaller than the phase of the aforementioned tool. Adjacent: the size of the gap between the abrasive particles and the abrasive particles. The constituting 'the end surface of the cut-side side of the slab that is sprayed to the cut-off plate by the first cut-off of the small-sized foam containing the smaller size is cut by the aforementioned tool The 'field H' which is formed in the groove of the above-mentioned plate can be easily inserted into the gap of the abrasive grains of the tool for forming the groove, so that the buffer effect of the fine beads which enter the gap of the abrasive grain, 201234468 The friction between the tool and the plate processed by the tool can be reduced. Further, in the machining apparatus of the present invention, the first mechanism includes: a first cutting fluid generating mechanism that generates fine beads in the liquid to generate the first cutting fluid; and a first cutting fluid spraying mechanism The first cutting fluid generated by the first cutting fluid generating means is sprayed onto the end surface of the tool, and the second mechanism has a second cutting fluid generating means for generating fine foam in the liquid to generate the The second cutting fluid spraying mechanism and the second cutting fluid spraying mechanism apply the second cutting fluid generated by the second cutting fluid generating means to at least one of both side surfaces of the tool. According to the above configuration, the first cutting fluid to be sprayed onto the end surface of the rotating tool to the cutting side of the plate and the second cutting fluid to be sprayed on at least one of the side surfaces of the tool are Since it is generated by the individual mechanism (the first cutting fluid generating means and the second cutting fluid generating means), the size of the fine foam contained in the first cutting fluid and the second cutting fluid can be easily made different. Further, in the machining apparatus of the present invention, the first mechanism includes: a first fine foam containing liquid generating mechanism that generates fine foam containing liquid in the liquid to generate fine foam containing liquid; and a first cutting liquid spraying mechanism The fine foam containing liquid supplied from the first fine foam containing liquid generating means through the first passage is sprayed as the first cutting liquid to the end face of the tool, and the second mechanism has the second fine foam The liquid-containing mechanism is configured to generate fine foam-containing liquid in the liquid to form a fine foam-containing liquid; and the second cutting liquid-spraying mechanism is configured to pass the second fine-bubble-containing liquid generating mechanism longer than the first passage The fine foam containing liquid supplied by the 2 channels is used as 201234468
-A 前述第2切削液，喷附至前述加工具的兩側面中至少一面 者。 藉由上述構成，由於從第1細微泡沫含有液生成機構至 第1切削液喷附機構的第1通路較從第2細微泡沫含有液生 成機構至第2切削液喷附機構的第2通路短，故可使將從第1 細微泡沫含有液生成機構所生成之細微泡沫含有液藉由第 1通路導至第1切削液喷附機構的時間，短於將從第2細微泡 沫含有液生成機構所生成之細微泡沫含有液藉由第2通路 導至第2切削液噴附機構的時間。因此，在第1切削液喷附 至加工具對板狀物切入側之端面為止，細微泡珠含有液中 之細微泡沫成長的時間，可短於第2切削液喷附至加工具兩 側面知至少一面為止之細微泡沫含有液中之細微泡泳成長 的時間。結果，可使喷附至加工具對板狀物切入側之端面 的前述第1切削液所含的細微泡洙，小於喷附至加工具兩側 面之至少一面的前述第2切削液所含的細微泡沫。 又，在本發明之機械加工裝置中，其中前述第1機構中 之前述第1細微泡沫含有液生成機構與前述第2機構中之前 述第2細微泡沫含有液生成機構係共通的細微泡沫含有液 生成機構。 藉由上述構成，以共通之細微泡沫含有液生成機構所 生成之細微泡沫含有液，在第1機構通過較短的第1通路， 作為含有尺寸較小之細微泡沫的第1切削液，從第1切削液 喷附機構喷附至加工具切入板狀物側之端部，另一方面， 在第2機構通過較長的第2通路，作為含有尺寸較大之細微 201234468 泡沫的第2切削液，從第2切削液喷附機構喷附至加工具之 兩側面至少一面。如此，由於無須在第1機構及第2機構設 置各別的細微泡沫含有液生成機構（第1細微泡沫含有液生 成機構、第2細微泡沫含有液生成機構），故可使構成更為 簡單。 本發明之機械加工方法係使旋轉之圓盤狀加工具切入 而加工板狀物者，前述機械加工方法係對於旋轉之前述加 工具對前述板狀物之切入側的端面，喷附含有細微泡沫的 第1切削液，並將所含之細微泡沫大小較前述第1切削液所 含之細微泡沫大小大的第2泡沫含有液，喷附至旋轉之前述 加工具之兩側面的至少一面。 又，本發明之機械加工方法中，其中前述加工具切入 前述板狀物之部分的表面係以細微的研磨粒覆蓋，且包含 在前述第1切削液之細微泡床的大小小於前述加工具之相 鄰接之研磨粒與研磨粒之間隙的大小。 發明效果 根據本發明之機械加工裝置及機械加工方法，可使包 含細微泡沫之切削液更為有效地利用在對於板狀物使用加 工具的加工。 圖式簡單說明 第1圖係顯示本發明第1實施形態之機械加工裝置（切 割裝置)基本構成的圖。 第2圖係顯示第1圖所示之切割裝置中刀片與喷附於該 刀片之切削液之關係的圖。 201234468 第3圖係顯示刀片、以該刀片形成於半導體晶圓以A 溝、及切腿中之細微雜之關係的示意•圖（之/)。 第4圖係顯示刀片、以該刀片形成於半導體晶圓之， 溝、及切脈中之細微祕之關係、的示意截面:(之> 第5圖係顯示刀片與喷附於該刀片之切削液之其他關 係的圖。 第6圖係顯示本發明第2實施形態之機械加工装襄（切 割裝置）的圖。 I：實施方式3 用以實施發明之形態 以下，使用圖示說明本發明之實施形態。 本發明之第1實施形態之切割裝置構成如第【及2一 示。另外，第1圖顯示切割裝置之基本構成’第2圖顯系第1 圖所示之切割裝置中刀片（加工具）與噴附於該刀片、厶切制 液的關係。 在第1及2圖中，該切割裝置100具有：栽置有作為被炉 工物之半導體晶圓W(板狀物）的失頭台2〇、切割本雜弟多 22、及支持切割本體單元22的支持部21。切割^體弟多22 具有圓盤狀之刀片18(加工具）’該刀片18安裝於藉由麟動馬 達(省略圖示）而旋轉之旋轉軸19。載置有半導體晶圓…厶夹 頭台20可移動於與圓盤狀之刀片18的面平行之預定方尚 (箭號A之方向），刀片18向其移動方向上游側（箭號B之方向） 高速旋轉(例如，30000rpm)。並且，藉由夾頭台2〇的移動， 載置於夹頭台20之半導體晶圓W會被旋轉的刀片18切入。 201234468 另外，炎頭台20與刀片18在每次刀片18對半導體晶圓w之1 切割線切削結束時，依預定間距相對移動於與刀片18之側 面交叉的方向（在本實施形態為垂直方向c)e藉此，刀片玎 沿著預定間隔之複數切割線切削半導體晶圓w。 又’切割裝置100具有貯存用以生成切削液之液體s(例 如純水）的貯液槽11，從貯液槽11延伸的送通管12a連接於泉 13的輸入口。從栗13之輸入口延伸的送通管i2b分歧成2個 送通管12c、12e，一方之送通管12c連接於第1泡沫產生部 14(第1切削液生成機構）’另一方之送通管126連接於第2泡 沫產生部16(第2切削液生成機構）。 第1泡沫產生部14及第2泡沐產生部16藉由利用壓力開 放式、旋轉式、多孔性物質等各種方式中之一種、或者利 用該等中之複數種方式，使所供給之液體中產生細微泡 沫，生成含有細微泡沫之液體，即細微泡沫含有液。第1泡 泳產生部14可產生例如直徑100nm〜ΙΟμηι的細微泡珠，即 所謂的超微氣泡或奈米氣泡。第2泡沫產生部16產生較第1 泡沫產生部14所產生之細微泡沫大小為大的細微泡沐，例 如直徑ΙΟμπι〜ΙΟΟμιη的細微泡沫，即所謂微氣泡。以第丄 泡沫產生部14所生成之細微泡沫含有液作為第1切削液，通 過送通管12d供給至第1喷嘴單元15(第1切削液噴附機構）； 以第2泡沫產生部16所生成之細微泡沫含有液作為第2切削 液，通過送通管12f供給至第2噴嘴單元17(第2切削液噴附機 構）〇 第1喷嘴單元15及第2喷嘴單元π，以與刀片18保持相-A The second cutting fluid is sprayed onto at least one of the two side faces of the tool. According to the above configuration, the first passage from the first fine foam containing liquid generating means to the first cutting liquid spraying means is shorter than the second passage from the second fine foam containing liquid generating means to the second cutting liquid spraying means. Therefore, the time from the first passage leading to the first cutting liquid spraying mechanism by the fine foam containing liquid generated by the first fine foam containing liquid generating means can be made shorter than the second fine foam containing liquid generating mechanism The generated fine foam containing liquid is guided to the second cutting liquid spraying mechanism by the second passage. Therefore, when the first cutting fluid is sprayed onto the end surface of the cutting tool on the cutting side of the plate, the fine beads contain the time during which the fine foam in the liquid grows, which can be shorter than the second cutting liquid is sprayed onto both sides of the adding tool. At least one side of the fine foam contains the time during which the fine bubbles in the liquid grow. As a result, the fine foam contained in the first cutting fluid sprayed onto the end surface of the tool-to-plate cutting side can be made smaller than the second cutting liquid sprayed onto at least one of the two side surfaces of the tool. Fine foam. Further, in the machine tool of the present invention, the first fine foam-containing liquid-containing liquid in the first mechanism and the second fine-bubble-containing liquid-generating mechanism in the second mechanism are a fine foam-containing liquid. Generation agency. According to the above configuration, the fine foam-containing liquid generated by the fine microbubble-containing liquid generating means is passed through the first first passage through the first mechanism, and the first cutting fluid containing the fine foam having a small size is used as the first cutting fluid. (1) The cutting fluid spraying mechanism is attached to the end portion of the adding tool to cut into the plate-like side, and the second mechanism passes through the second second passage as the second cutting fluid containing the large-sized 201234468 foam. And ejecting from the second cutting fluid spraying mechanism to at least one side of both sides of the adding tool. In this way, since it is not necessary to provide the respective fine foam-containing liquid generating means (the first fine foam-containing liquid generating means and the second fine-bubble-containing liquid generating means) in the first mechanism and the second mechanism, the configuration can be made simple. In the machining method of the present invention, the rotary disk-shaped tool is cut into a plate to process the plate, and the mechanical processing method is to spray the fine end foam on the cut end side of the plate member with respect to the rotating tool. The first cutting fluid contains a second foam containing liquid having a fine foam size larger than that of the first cutting fluid, and is sprayed onto at least one of both side surfaces of the rotating tool. Further, in the machining method of the present invention, the surface of the portion in which the tool is cut into the plate-like material is covered with fine abrasive grains, and the size of the fine bubble bed contained in the first cutting fluid is smaller than that of the above-mentioned tool. The size of the gap between the adjacent abrasive particles and the abrasive particles. EFFECTS OF THE INVENTION According to the machining apparatus and the machining method of the present invention, the cutting fluid containing fine foam can be more effectively utilized in the processing of the tool for the plate. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a basic configuration of a machining device (cutting device) according to a first embodiment of the present invention. Fig. 2 is a view showing the relationship between the blade and the cutting fluid sprayed on the blade in the cutting device shown in Fig. 1. 201234468 Fig. 3 is a schematic diagram (/) showing the relationship between the blade, the fine groove formed in the semiconductor groove by the blade, and the cutting leg. Fig. 4 is a schematic cross-sectional view showing the relationship between the blade, the fine groove formed in the semiconductor wafer, the groove, and the cut pulse: (the > Fig. 5 shows the cutting of the blade and the blade attached thereto) Fig. 6 is a view showing a machining device (cutting device) according to a second embodiment of the present invention. I: Embodiment 3 is a mode for carrying out the invention. Embodiments of the cutting device according to the first embodiment of the present invention are as shown in the first and second aspects. In addition, the first embodiment shows the basic configuration of the cutting device, and the second embodiment of the cutting device shown in Fig. 1 is a blade ( In the first and second figures, the cutting device 100 has a semiconductor wafer W (plate) to be placed as a workpiece. The head unit 2, the cutting machine 22, and the support portion 21 supporting the cutting body unit 22. The cutting body 22 has a disc-shaped blade 18 (plus tool) 'the blade 18 is mounted on the collar a rotating shaft 19 that is rotated by a moving motor (not shown). The body wafer ... the chuck table 20 is movable in a predetermined direction parallel to the face of the disk-shaped blade 18 (the direction of the arrow A), and the blade 18 is moved toward the upstream side in the moving direction (the direction of the arrow B). Rotation (for example, 30,000 rpm), and by the movement of the chuck table 2, the semiconductor wafer W placed on the chuck table 20 is cut by the rotating blade 18. 201234468 In addition, the head table 20 and the blade 18 are Each time the blade 18 finishes cutting the 1 cutting line of the semiconductor wafer w, it moves relative to the side intersecting the side surface of the blade 18 at a predetermined pitch (in the present embodiment, the vertical direction c) e, whereby the blade 玎 is predetermined The plurality of dicing lines are used to cut the semiconductor wafer w. The 'cutting device 100 has a sump 11 for storing a liquid s (for example, pure water) for generating a cutting fluid, and the feed pipe 12a extending from the sump 11 is connected to The input port of the spring 13. The feed pipe i2b extending from the input port of the pump 13 is branched into two feed pipes 12c and 12e, and one of the feed pipes 12c is connected to the first froth generation unit 14 (the first cutting fluid generating mechanism) The other side of the delivery tube 126 is connected to the second foam generating portion 16 (the second cut) The first liquid generating unit 14 and the second foam generating unit 16 use one of various methods such as a pressure open type, a rotary type, and a porous substance, or a plurality of types of the above, A fine foam is generated in the supplied liquid to form a liquid containing fine foam, that is, a fine foam containing liquid. The first bubble generating portion 14 can generate, for example, fine beads having a diameter of 100 nm to ΙΟμηι, so-called ultrafine bubbles or nai. The second bubble generating portion 16 produces a fine foam having a larger size than the fine foam generated by the first foam generating portion 14, for example, a fine foam having a diameter of ΙΟμπι to ΙΟΟμηη, that is, a so-called microbubble. The fine foam-containing liquid generated by the second foam generating portion 14 is supplied as the first cutting liquid, and is supplied to the first nozzle unit 15 (first cutting liquid spraying mechanism) through the feed pipe 12d. The second foam generating unit 16 The generated fine foam-containing liquid is supplied as the second cutting liquid to the second nozzle unit 17 (second cutting liquid spraying mechanism) 〇 first nozzle unit 15 and second nozzle unit π through the feed pipe 12f, and the blade 18 Keep phase
10 201234468 對位置關係之狀態下，包含在切割本體單元22。第i喷嘴單 元15係配置成與旋轉之刀片18切入半導體晶圓w之側的端 面對向。並且，供給於第1嘴嘴單元15之前述第丨切削液， 係從喷嘴孔151朝著刀片18對半導體晶圓w之切入側之端 面的該半導體晶圓w表面預定附近吐出。第2喷嘴單元17係 以2個喷嘴單元17a、17b(以下稱為第2噴嘴單元17a、第2喷 嘴單元17b)所構成。2個第2噴嘴單元17&、17b係配置成夾 住旋轉之刀片18的下方部份，供給於一方之第2噴嘴單元 17a的第2切削液係從複數喷嘴孔171&朝著刀片18之一側面 吐出，而供給於另一方之第2喷嘴單元17b的第2切削液係從 複數喷嘴孔171b朝著刀片18之另一側面吐出。 另外，貯液槽11、送通管12a、12b、泵13、送通管12c、 第1泡沫產生部14(第1切削液生成機構）、送通管12d及第1 噴嘴單元15(第1切削液噴附機構)構成了對於旋轉之刀片18 切入半導體晶圓W之側的端面噴附第1切削液的第1機構。 又，與前述第1機構共通之貯液槽11、送通管12a、12b、泵 13，以及送通管12e '第2泡沫產生部16(第2切削液生成機 構）、送通管12f及第2噴嘴單元17a、17b，則構成對於旋轉 之刀片18的兩側面噴附第2切削液的第2機構。 在如前所述之切割裝置100(機械加工裝置）中，夾頭台 20—面移動，旋轉之刀片18—面切割載置於夾頭台20之半 導體晶圓在該過程中，從第1喷嘴單元15之喷嘴孔151 吐出之第1切削液(含有超微氣泡或奈米氣泡（直徑100nm〜 ΙΟμηι))，一直喷附於刀片18切入半導體晶圓W之側的端 201234468 面’並且’從第2喷嘴單元17a、17b之各喷嘴孔171a、171b 吐出之第2切削液（含有微氣泡（直徑，一直 喷附於刀片18的兩側面。 從第1喷嘴單元15喷附至旋轉之刀片18切入半導體晶 圓W之側的端面的第1切削液，被刀片18之旋轉（箭號b方向） 帶著，流入藉由該刀片18形成於半導體晶圓W的切削溝。 包含在第1切削液之細微泡沫(超微氣泡或奈米氣泡）由於大 小較小，故谷易進入該切削溝，例如，如第3圖所示，第1 切削液中之多數細微泡沫Bbl進入由刀片18所形成之切削 溝Sc。如此，由於多數細微泡沫ΒΜ進入切削溝&，故藉由 該細微泡沫Bbl之緩衝作用，可減輕刀片18與半導體晶圓w 之間的摩擦，可有效地防止因刀片18之切入所形成之切削 溝Sc的角缺陷脫落。 此外，包含在第1切削液之細微泡泳Bbl(超微氣泡或奈 米氣泡）的大小（直徑），小於覆蓋刀片18表面之研磨粒(鑽石 粒）的平均粒徑(例如35μηι)，也小於刀片18相鄰接之研磨粒 與研磨粒之間隙的大小（通常大略等於研磨粒的大小）。因 此，藉由進入該研磨粒間之細微泡沫的緩衝作用可更減 低旋轉刀片18與半導體晶圓之摩擦，可更有效地防止 脫落等半導體晶圓W的缺角。 另一方面，包含在從第2噴嘴單元173、17b喷附至旋轉 之刀片18兩側面的第2切削液之細微泡沐(微氣泡），由於大 小較包含在前述第丨切舰之細微料(超微氣泡或奈米氣 泡）大’而為較大，故喷附於刀片18兩側面之第2切削液中 12 201234468 - 之細微泡沫雖難以進入形成在半導體晶圓w之前述切削溝10 201234468 In the state of the positional relationship, it is included in the cutting body unit 22. The i-th nozzle unit 15 is disposed to face the end of the rotating blade 18 cut into the side of the semiconductor wafer w. Further, the second cutting fluid supplied to the first nozzle unit 15 is discharged from the nozzle hole 151 toward the predetermined vicinity of the surface of the semiconductor wafer w on the cutting edge side of the semiconductor wafer w from the blade 18. The second nozzle unit 17 is composed of two nozzle units 17a and 17b (hereinafter referred to as a second nozzle unit 17a and a second nozzle unit 17b). The two second nozzle units 17 & 17b are arranged to sandwich the lower portion of the rotating blade 18 , and the second cutting fluid supplied to one of the second nozzle units 17 a is directed from the plurality of nozzle holes 171 & toward the blade 18 One side is discharged, and the second cutting fluid supplied to the other second nozzle unit 17b is discharged from the plurality of nozzle holes 171b toward the other side surface of the blade 18. Further, the liquid storage tank 11, the feed pipes 12a and 12b, the pump 13, the feed pipe 12c, the first foam generating portion 14 (first cutting fluid generating mechanism), the feed pipe 12d, and the first nozzle unit 15 (first The cutting fluid spraying mechanism constitutes a first mechanism that sprays the first cutting fluid on the end surface of the rotating blade 18 that is cut into the side of the semiconductor wafer W. Further, the liquid storage tank 11, the feed pipes 12a and 12b, the pump 13, and the feed pipe 12e' the second bubble generating portion 16 (second cutting fluid generating means) and the feed pipe 12f which are common to the first means The second nozzle units 17a and 17b constitute a second mechanism that sprays the second cutting fluid on both side surfaces of the rotating blade 18. In the cutting device 100 (machining device) as described above, the chuck table 20 is moved face to face, and the rotating blade 18-side cuts the semiconductor wafer placed on the chuck table 20 in the process, from the first The first cutting fluid (containing ultrafine bubbles or nanobubbles (diameter 100 nm to ΙΟμηι)) discharged from the nozzle holes 151 of the nozzle unit 15 is sprayed on the end 201234468 of the side of the blade 18 cut into the semiconductor wafer W. The second cutting fluid (containing microbubbles (diameter is always sprayed on both side faces of the blade 18) from the nozzle holes 171a and 171b of the second nozzle units 17a and 17b. The nozzle is sprayed from the first nozzle unit 15 to the rotating blade. The first cutting fluid cut into the end surface on the side of the semiconductor wafer W is carried by the rotation of the blade 18 (in the direction of the arrow b), and flows into the cutting groove formed in the semiconductor wafer W by the blade 18. The fine foam (ultra-microbubble or nanobubble) of the cutting fluid is easy to enter the cutting groove due to its small size. For example, as shown in Fig. 3, most of the fine foam Bbl in the first cutting fluid enters the blade 18 The cutting groove Sc formed. Thus, due to The fine foam enthalpy enters the cutting groove & therefore, the friction between the blade 18 and the semiconductor wafer w can be alleviated by the buffering action of the fine foam Bb1, and the cutting groove Sc formed by the cutting of the blade 18 can be effectively prevented. In addition, the size (diameter) of the fine bubble Bbl (ultra-microbubble or nanobubble) contained in the first cutting fluid is smaller than the average particle diameter of the abrasive grains (diamond particles) covering the surface of the blade 18 (for example) 35μηι) is also smaller than the size of the gap between the abrasive grains and the abrasive grains adjacent to the blade 18 (usually roughly equal to the size of the abrasive particles). Therefore, the rotating blade can be further reduced by the buffering action of the fine foam entering the abrasive particles. The friction with the semiconductor wafer 18 can more effectively prevent the missing corners of the semiconductor wafer W such as falling off. On the other hand, the second cutting is performed on both sides of the blade 18 that is sprayed from the second nozzle units 173 and 17b to the rotating blade 18. The fine foam (microbubbles) of the liquid is larger than the fine material (ultra-microbubble or nanobubble) contained in the aforementioned first cutting ship, so it is sprayed on the second side of the blade 18 Cutting In 12201234468-- of tiny bubbles enters though a groove formed in the cutting of the semiconductor wafer w
Sc，但例如第4圖所示，藉由被刀片18帶著而流出至半導體 晶圓W上的第2切削液中大小較大的細微泡沫Bb2之作用， 可使半導體晶圓W之切屑（包含了第1切削液所包含之細微 泡沫Bbl吸附者）容易浮上切削液面。因此，切屑與切削液 一起流出，可有效地防止再附著於半導體晶圓W，並且， 藉由連續供給第2切削液之液流，可從半導體晶圓W上除去 該等切屑。 此外’由於來自於2個第2喷嘴單元17a、17b的第2切削 液喷附至為較廣區域之刀片18的兩側面，故可有效地使刀 片18冷卻’另一方面，由於該第2切削液所含之細微泡沫 . Bb2(微氣泡）的大小較大，故附著於旋轉之刀片18的切削液 實質液體密度較小，可減少對於刀片18之負載增加情形。 藉此’可無須額外增加用以使刀片18旋轉之驅動馬達輸出。 如上所述，根據本發明第1實施形態之切割裝置（機械 加工裝置）’由於對於旋轉之刀片18切入半導體晶圓W之側 的端面’喷附含有大小較小之細微泡沫Bbl(超微氣泡或奈 米氣泡）的第1切削液，將包含大小較大之細微泡沫Bb2(微 氣泡）的第2切削液，喷附至旋轉之刀片18的兩側面，故可 更有效地將包含細微泡沫Bbl、Bb2(超微氣泡、微氣泡）之 切削液利用於旋轉之刀片18對於半導體晶圓W的加工。 另外’在本發明第1實施形態之切割裝置100中，係從2 個第2喷嘴單元17a、17b將第2切削液喷附至刀片18的兩側 面，但也可使用單一的第2噴嘴單元π將第2切削液喷複製 13 201234468 刀片18之任一側面。 具體而言，可例如第5圖所示之構成。 在第5圖中，刀片18如前所述，在每次半導體晶圓W之 1切割線的切削結束時，一面以預定間距對於半導體晶圓W 相對移動於與該刀片18之側面交叉的方向（在本實施形態 中為垂直方向C)，一面沿著複數切割線切削半導體晶圓 W。單一之第2喷嘴單元17係設置成將第2切削液喷附在刀 片18之垂直該刀片18側面之移動方向C的下游側側面（第5 圖中為下側面）。另外，在第5圖中，關於單一之第2喷嘴單 元17以外的構成，與前述之例（參照第1及2圖）一樣。 在如上述般使用單一之第2喷嘴單元17的構成中，藉由 從單一之第2喷嘴單元17將包含大小較大之細微泡沫Bb2的 第2切削液喷附至刀片18之一側面，與前述情況相同，容易 使半導體晶圓W的切屑浮上，也可減少對於刀片18之負載 增加情形。藉由單一之第2喷嘴單元17雖僅能對於刀片18之 一側面喷附第2切削液，但由於特別是來自於該單一之第2 喷嘴單元17的第2切削液，對於刀片18，喷附於與垂直於該 刀片18側面之移動方向C相反的方向，故可防止之前切削所 產生之切削屑捲入刀片18移動於與其側面垂直之方向C而 之後要進行切削的區域。因此，可有效防止刀片18捲入已 產生之切削屑而可能使晶圓切削邊角脫落情形發生。 另外，第5圖中雖使用單一之第2喷嘴單元17，但亦可 如第2圖所示，設置2個喷嘴單元17a、17b，因應刀片18與 半導體晶圓W的相對移動方向，僅從一方之第2噴嘴單元喷Sc, for example, as shown in FIG. 4, the chip of the semiconductor wafer W can be scraped by the large-sized fine foam Bb2 flowing out of the second cutting liquid on the semiconductor wafer W by the blade 18. It is easy to float on the cutting surface by including the fine foam Bbl adsorbent contained in the first cutting fluid. Therefore, the chips flow out together with the cutting fluid, and it is possible to effectively prevent reattachment to the semiconductor wafer W, and the chips can be removed from the semiconductor wafer W by continuously supplying the liquid flow of the second cutting fluid. Further, since the second cutting fluid from the two second nozzle units 17a and 17b is sprayed to both side faces of the blade 18 which is a wider area, the blade 18 can be effectively cooled. On the other hand, the second The fine foam contained in the cutting fluid. The size of Bb2 (microbubbles) is large, so that the cutting fluid attached to the rotating blade 18 has a substantially low liquid density, which can reduce the load increase on the blade 18. Thereby, there is no need to additionally increase the output of the drive motor for rotating the blade 18. As described above, the cutting device (machining device) according to the first embodiment of the present invention "sprays a small-sized bubble Bbl (a microbubble) having a small size due to the end face of the side of the rotating blade 18 cut into the semiconductor wafer W. Or the first cutting fluid of the nanobubble), the second cutting fluid containing the fine foam Bb2 (microbubbles) having a large size is sprayed onto both sides of the rotating blade 18, so that the fine foam can be more effectively contained. The cutting fluids of Bbl and Bb2 (ultra-microbubbles, microbubbles) are utilized for the processing of the semiconductor wafer W by the rotating blade 18. In the cutting apparatus 100 according to the first embodiment of the present invention, the second cutting fluid is sprayed onto both side surfaces of the blade 18 from the two second nozzle units 17a and 17b. However, a single second nozzle unit may be used. π sprays the second cutting fluid on either side of the 201234468 blade 18. Specifically, for example, the configuration shown in FIG. 5 can be employed. In Fig. 5, the blade 18 relatively moves the semiconductor wafer W relative to the side of the blade 18 at a predetermined pitch every time the cutting of the dicing line of the semiconductor wafer W is completed, as described above. (In the present embodiment, the vertical direction C), the semiconductor wafer W is cut along the plurality of dicing lines. The single second nozzle unit 17 is provided to spray the second cutting fluid onto the downstream side surface (the lower side in Fig. 5) of the blade 18 in the moving direction C perpendicular to the side surface of the blade 18. Further, in Fig. 5, the configuration other than the single second nozzle unit 17 is the same as the above-described example (see Figs. 1 and 2). In the configuration in which the single second nozzle unit 17 is used as described above, the second cutting fluid containing the fine foam Bb2 having a large size is sprayed onto one side surface of the blade 18 from the single second nozzle unit 17, and In the same manner as described above, it is easy to float the chips of the semiconductor wafer W, and it is also possible to reduce the load increase to the blade 18. Although the second cutting fluid can be sprayed only on one side of the blade 18 by the single second nozzle unit 17, the second cutting fluid from the single second nozzle unit 17 is used, and the blade 18 is sprayed. Attached to the direction opposite to the direction C of movement perpendicular to the side of the blade 18, it is possible to prevent the chips generated by the previous cutting from being caught in the region where the blade 18 is moved in the direction C perpendicular to the side thereof and then cut. Therefore, it is possible to effectively prevent the blade 18 from being caught in the generated chips and possibly causing the wafer cutting edge to fall off. Further, although the single second nozzle unit 17 is used in Fig. 5, as shown in Fig. 2, two nozzle units 17a and 17b may be provided, and only the relative movement direction of the blade 18 and the semiconductor wafer W is used. The second nozzle unit of one side is sprayed
14 201234468 附第2切削液。 又刚述之與刀片18之側面對向配置之第2噴嘴單元 H 17b(17)’係於該等第2噴嘴單元na、17b⑼之延伸 方向（切财向)略呈均-地吐出第2切削液者，但並不限定 於此。例如，在2個第2噴嘴單元17a、17b(參照第认2圖） 之至少-者、或者單一之第2噴嘴單元17(參照第5圖)中，可 以刀片18切人半導體晶_之位置為境界，使從幻喷嘴單 元15相反側之。[^吐出的第2切削液之量，多於從該第κ 嘴單元15侧的部分吐出的第2切削液之量。此時，可在切削 半導體晶圓W後帶有較多摩擦熱的時點，一口氣冷卻刀片 18。因此，可得到較高的刀片18高摩擦防止效果。 本發明第2實施形態之切割裝置2〇〇，係構成如第6圖所 不。該切割裝置200之生成包含較小細微泡沫之第丨切削 液、與包含較大細微泡沫之第2切削液的機構，與前述之本 發明第1實施形態之切割裝置1 〇〇(參照第丨圖）不同。 在第6圖中，該切割裴置2〇〇與第丨實施形態之切割裝置 忉〇(參照第1及2圖）一樣，於藉由驅動馬達旋轉之懸轉軸19 安骏有刀片18，載置有半導體晶圓…之夾頭台20移動，藉 此’可藉由旋轉之刀片18切入半導體晶圓w。又，與刀片 18切入半導體晶圓W之側的端面對向ί也配置有第1喷嘴單 元15，並且，與刀片18之兩側面對向地配置有2個第2喷嘴 單元17(在第6圖中僅顯示一方之第2噴嘴單元17)。 該切割裝置200更具有貯存用以生成切削液之液體 sOj如純水)的貯液槽31，從貯液槽31延伸之送通管32a連接 15 201234468 於泵33之輸入口。在貯液槽31與泵33之間的送通管32a，連 接著設有流量調整閥35之送通管32b，來自於氣體供給部34 之氣體（例如氮氣）以流量調整閥3 5所調整之流量流通於送 通管32b，並供給至通過送通管32a的液體S。如上述般混有 來自於氣體供給部34之氣體的液體s(以下稱為氣體含有液 Sa)，藉由泵33，通過連接於該輸出口之送通管32c而被壓 送至加壓槽36，而被暫時地貯存。 在加壓槽36,由泵33所壓送而貯存之氣體含有液&被 加壓’氣體含有液Sa内的氣體溶解於液中，該液中之氣體 洛存ί辰度會上升，而生成氣體溶解成在常壓下之飽和溶解 濃度以上之狀態的氣體溶存液Sb。另外，加壓槽36内的壓 力可藉由壓力調整器37來調整。從加壓槽36延伸之送通管 32d分歧成2個送通管32e、32g，一方之送通管326連接於第 1泡沫產生器39(第1泡沫含有液生成機構），另一方之送通管 32g連接於第2泡珠產生器41(第2泡;末含有液生成機構）。另 外，在到第1泡沫產生器39之送通管仏、到第2泡沐產生器 41之达通#32g，分別設有流量調朗38a、流量調整閥38b；> 々第1泡冰產生器39具有複數之孔口，從加壓槽36通過送 通s 32d、32e而供給之氣體溶存液％藉由通過前述複數孔 口時之壓力開放，可在液中產生細微泡沫。又，第2泡沫產 生器41也同樣地具有複數孔口’從加壓槽％通過送通管 32e 32grfii供給之氣體溶存液Sb藉由通過前述複數孔口時 之壓力開放，可在液中產生細微泡珠。第1泡珠產生器％所 生成之細微料含有液所含有之細微泡泳大小 ’係設定成 16 201234468 . 不大於由第2泡沫產生器41所生成之細微泡沫含有液所含 有之細微泡沫大小的預定大小，例如，設定成超微氣泡或 奈米氣泡(例如1 OOrnn〜1 〇μηι)。 從第1泡沫產生器39延伸之送通管32f係連接於第！喷 嘴單元15,由第1泡沫產生器39所生成之細微泡沫含有液通 過送通管32f而供給至第丨喷嘴單元15。並且，從第丨喷嘴單 元15將細微泡沐含有液作為第1切削液喷附至旋轉之刀片 18切入半導體晶圓W側之端面。又，從第2泡沫產生器41延 伸之送通管32h係分歧(省略圖示）而連接於2個第2喷嘴單元 Π，由第2泡沫產生器41所生成之細微泡沫含有液通過送通 管32h而供給至第2喷嘴單元17。並且，從第2噴嘴單元17將 細微泡沫含有液作為第2切削液喷附至旋轉之刀片18的兩 側面。從第2泡沫產生器41延伸至第2噴嘴單元π之送通管 32h，較從第1泡沫產生器39延伸至第丨喷嘴單元15之送通管 32f 長。 在如上述之切割裝置200中，由於從第1泡沫產生器39 延伸至第1喷嘴單元15之送通管32f，較從第2泡沫產生器41 延伸至第2喷嘴單元π之送通管32h短(在第6圖中，將第！泡 沫產生器39隔著送通管32f配置於第1喷嘴單元15之前），故 第1泡沫產生器39所生成之細微泡沫含有液藉由送通管32f 導至第1喷嘴單元15的時間，較第2泡沐產生器41所生成之 細微泡沫含有液藉由送通管32h導至第2喷嘴單元17的時間 短。因此，由於作為第1切削液噴附至刀片18之半導體晶圓 W切入側的端面為止，細微泡沫含有液中之細微泡沫成長 17 201234468 ㈣編叫州，較糊2_液喷附 =兩面:止之細微泡朱含有液中之細微泡泳成長的 S、可使攸第1噴嘴單元15作為第1糊液喷附至刀片 18之細U泡沫含有液所包含之細微泡珠的大小，小於從第2 喷嘴單元17作為第2切削液噴附至刀片18之細微泡沐含有 液所包含之細微泡沐的大小；相反地，可使作為第2切削液 喷附至刀>{ 18之細微料含有液巾所含之細微泡沫的大 小’更比作為第1切削液喷附至刀片18之細微泡沐含有液中 所含之細微泡沫的大小為大。 因此’在切割裝置2叫，與第1實施形態之切割裝置 100的情況一樣，一面從第1噴嘴單元15將包含大小較小之 細微泡泳(超微氣泡）的第1切削液喷附至刀片18切入半導體 晶圓W側之端面，並且，從第2喷嘴單元17將包含大小較大 之細微泡沐(微氣泡）的第2切削液嘴附至刀片18的兩側面， -面藉由旋轉之刀片18切割半導體晶圓W。此時，可有效 地利用進人切肖彳溝&之第丨切肖彳液中大小較大之細微泡泳 Bbl的緩衝作用（參照第3圖）、第2切削液中大小較大之細微 泡床Bb2的使切屬浮上的作肖、以及防止對旋轉之刀片 增加負載等作用。 另外，在前述之切割裝置2〇〇中，分別設有所產生之泡 沐大小不同的第1泡沫產生器39與第2泡沫產生器41，但亦 可使第1泡沫產生器39與第2泡沫產生器41產生同樣大小的 細微泡沫。即使在這樣的情況下，由於從第丨泡沫產生器％ 延伸至第1喷嘴單元15之送通管32f，較從第2泡沫產生器41 201234468 • 延伸至第2喷嘴單元17之送通管32h短，故從第1喷嘴單元15 吐出之第1切削液所含之細微泡沫的大小，會小於從第2喷 嘴單元17吐出之第2切削液所含之細微泡沫的大小。 此外，例如，也可構成為僅設置產生大小較小之細微 泡沫的單一泡沫產生器（共通之泡沫產生器）。此時，將從該 單一泡沫產生器至第1噴嘴單元15的送通管長度，設定成短 於從該單一泡沫產生器至第2喷嘴單元17的送通管長度。藉 由上述構成，以前述單-泡珠產生器所生成之細微泡珠含 有液到第1喷嘴單元15為止的時間，會與到第2喷嘴單元” 為止的時間產生不同，藉由該時間的不同，可使從第1喷嘴 單元15作為第1切削液喷附至刀片18的細微泡沫含有液中 - 之細微泡沫的大小，小於從第2喷嘴單元17作為第2切削液 纟附至刀片18的細微泡泳含有液中之細微泡沐的大小。此 可達成下列情形：亦即’在單_泡珠產生器生成第W削液 所含者所須之、或是其以下之大小的細微泡沐；考慮以泡 沐產生器所生成之細微泡珠的大小與第i切削液所含者所 居之細微錢的大小，來決定介於躲產生器與第1喷嘴單 元15間之送通管長度’例如，使之為可盡量維持泡珠產生 益所生成m小之狀態而供給至第丨喷嘴單元15的長 度；另-方面，考慮以泡沐產生器所生成之細微泡沫的大 小與第2切削液所含者所須之細微泡珠的大小，來決定介於 泡沫產生器與第2喷嘴單元17間之送通管長度，例如，使其 長度為泡床產生器所生成之細微泡沐可在移動於送通管之 間成長，成為第2切削液所含者所須大小之細微泡沐，而供 19 201234468 ，至第2喷嘴單元17。藉此，考慮以泡泳產生器所生成之細 微泡沫的大小與切削液所含者所須之細微泡沫的大小，來 決定介於單—料產生^與各喷嘴單元間之各送通管的長 度’可分別供給各喷嘴單元所須大小的細微輯。更具體 之例為：藉由單-料產生器使切難中產生超微氣泡， 然後’使㈣單-料產生器至第丨喷嘴單元15之送通管長 度為盡里維持超微氣泡狀態的第1切削液可從第丨喷嘴單 兀15吐出的長度；另—方面，使從單—泡泳產生器至第2喷 背單元17之送通官長度，為含有超微氣泡成長而成為微氣 泡之細微泡沫的第2切削液可從第2喷嘴單元17吐出的長 度。另外，該等送通管的長度設定等，會因所使用之切削 液種類或流速等而變化，皆由實驗等來確認、設定。 另外，從第1泡沫產生器39延伸至第1喷嘴單元15之送 通官32f及從第2泡沫產生器41延伸至第2喷嘴單元17之送 通f32h、或是從前述單一泡沫產生器延伸至第丨喷嘴單元 15之送通管及從該單一泡沫產生器延伸至第2喷嘴單元以 之送通管，並不限於直管，可利用例如，螺旋狀管。此時， 可因應螺旋狀管之捲數來設定其長度（捲徑為一定之情況 下）。在上述實施形態中，從單一泡沫產生器至第丨喷嘴單 疋15之送通管捲數係設定成較從從前述單一泡沫產生器至 第2噴嘴單元17之送通管捲數少。 又’在前述切割裝置200中’係利用壓力開放而使液中 產生細微泡沫，但也可利用旋轉式、多孔物質等其它方式。 另外’已說明了切割裝置1〇〇、2〇〇，但本發明也可適 20 201234468 、 用於切割板狀物之切斷裝置、或研磨裝置等其他機械加工 裝置，在本說明書中，係總稱該等為切削，並將所使用之 加工液稱為切削液。 c圖式簡單說明：j 第1圖係顯示本發明第1實施形態之機械加工裝置（切 割裝置）基本構成的圖。 第2圖係顯示第1圖所示之切割裝置中刀片與喷附於該 刀片之切削液之關係的圖。 第3圖係顯示刀片、以該刀片形成於半導體晶圓之切入 溝、及切削液中之細微泡泳之關係的示意截面圖（之一）。 第4圖係顯示刀片、以該刀片形成於半導體晶圓之切入 溝、及切削液中之細微泡沫之關係的示意截面圖（之二）。 第5圖係顯示刀片與喷附於該刀片之切削液之其他關 係的圖。 第6圖係顯示本發明第2實施形態之機械加工裝置（切 割裝置）的圖。 15.. .第1喷嘴單元（第1切削液 喷附機構） 151.. .喷嘴孔 16…第2泡沫產生部（第2切削 液生成機構） 17…第2喷嘴單元17(第2切削 液喷附機構） 【主要元件符號說明 11、31…貯液槽 12a、12b、12c、12d、12e、12f、 32a、32b、32c、32d、32e、 32g、32f、32h...送通管 13、33···豕 14...第1泡沫產生部（第1切削 液生成機構） 21 201234468 17a、17b···第2喷嘴單元 171a、171b···喷嘴孔 18.. .刀片（加工具） 19.. .旋轉軸 20.. .夾頭台 21.. .支持部 22…切割本體單元 34.. .氣體供給部 35.. .流量調整閥 36.. .加壓槽 37.. .壓力調整器 38a、38b...流量調整閥 39.. .第1泡沫產生器（第1泡沫 含有液生成機構） 41.. .第2泡沫產生器（第2泡沫 含有液生成機構） 100、200…切割裝置 A、B...箭號 Bbl、Bb2..·細微泡沫 C...方向 5.. .液體14 201234468 Attached to the second cutting fluid. The second nozzle unit H 17b (17)' which is disposed opposite to the side surface of the blade 18 is slightly discharged uniformly in the extending direction (cutting direction) of the second nozzle units na and 17b (9). The cutting fluid is, but not limited to, the one. For example, in at least one of the two second nozzle units 17a and 17b (see the second drawing) or the single second nozzle unit 17 (see FIG. 5), the blade 18 can be cut into the position of the semiconductor crystal. For the realm, make it from the opposite side of the magic nozzle unit 15. [^ The amount of the second cutting fluid discharged is larger than the amount of the second cutting fluid discharged from the portion on the side of the first knuckle unit 15. At this time, the blade 18 can be cooled in one breath at a time point when the semiconductor wafer W is cut with more frictional heat. Therefore, a high blade 18 high friction preventing effect can be obtained. The cutting device 2 according to the second embodiment of the present invention has a configuration as shown in Fig. 6. The cutting device 200 generates a second cutting fluid containing a small fine foam and a second cutting fluid containing a large fine foam, and the cutting device 1 according to the first embodiment of the present invention described above (see Figure) is different. In Fig. 6, the cutting device 2 is the same as the cutting device 丨 of the second embodiment (see Figs. 1 and 2), and the suspension shaft 19 is rotated by the drive motor. The chuck table 20 on which the semiconductor wafer is placed is moved, whereby the semiconductor wafer w can be cut by the rotating blade 18. Further, the first nozzle unit 15 is disposed also on the end surface of the blade 18 that is cut into the side of the semiconductor wafer W, and two second nozzle units 17 are disposed facing the both sides of the blade 18 (in the first In Fig. 6, only one of the second nozzle units 17) is shown. The cutting device 200 further has a sump 31 for storing a liquid sOj such as pure water for generating a cutting fluid, and a feed pipe 32a extending from the sump 31 is connected to an input port of the pump 33. The feed pipe 32a between the reservoir 31 and the pump 33 is connected to the feed pipe 32b provided with the flow rate adjusting valve 35, and the gas (for example, nitrogen) from the gas supply unit 34 is adjusted by the flow rate adjusting valve 35. The flow rate flows through the feed pipe 32b and is supplied to the liquid S passing through the feed pipe 32a. As described above, the liquid s (hereinafter referred to as the gas containing liquid Sa) from the gas supplied from the gas supply unit 34 is mixed, and is pumped to the pressurizing tank by the pump 33 through the feed pipe 32c connected to the output port. 36, and was temporarily stored. In the pressurizing tank 36, the gas contained in the gas containing liquid pumped by the pump 33 is dissolved in the liquid, and the gas in the gas containing liquid Sa is dissolved in the liquid, and the gas in the liquid rises. The gas-dissolved liquid Sb in which the generated gas is dissolved in a state above the saturated dissolved concentration at normal pressure. Further, the pressure in the pressurizing groove 36 can be adjusted by the pressure regulator 37. The feed pipe 32d extending from the pressurizing tank 36 is branched into two feed pipes 32e and 32g, and one of the feed pipes 326 is connected to the first foam generator 39 (first foam containing liquid generating mechanism), and the other is sent. The through pipe 32g is connected to the second bubble generator 41 (second bubble; at the end, a liquid generating mechanism). Further, a flow rate adjustment valve 38a and a flow rate adjustment valve 38b are provided in the delivery pipe 到 of the first bubble generator 39 to the 达通#32g of the second bubble generator 41; > 々 the first ice blast The generator 39 has a plurality of orifices, and the gas solution % supplied from the pressurizing tank 36 by the feed s 32d, 32e is opened by the pressure when passing through the plurality of orifices, whereby fine foam can be generated in the liquid. Further, the second foam generator 41 similarly has a plurality of orifices. The gas solution Sb supplied from the pressure tank % through the feed pipe 32e 32grfii is opened by the pressure when passing through the plurality of orifices, and can be produced in the liquid. Fine beads. The size of the fine bubble contained in the fine material containing liquid generated by the first bubble generator % is set to 16 201234468. It is not larger than the fine foam size contained in the fine foam containing liquid generated by the second foam generator 41. The predetermined size, for example, is set to an ultrafine bubble or a nanobubble (for example, 1 OOrnn~1 〇μηι). The feed pipe 32f extending from the first foam generator 39 is connected to the first! In the nozzle unit 15, the fine foam containing liquid generated by the first foam generator 39 is supplied to the second nozzle unit 15 through the feed pipe 32f. Then, the fine bubble containing liquid is sprayed as the first cutting liquid from the second nozzle unit 15 to the end surface of the rotating blade 18 which is cut into the semiconductor wafer W side. Further, the feed pipe 32h extending from the second foam generator 41 is branched (not shown) and connected to the two second nozzle units, and the fine foam containing liquid generated by the second foam generator 41 is passed through. The tube 32h is supplied to the second nozzle unit 17. Further, the fine foam-containing liquid is sprayed from the second nozzle unit 17 as the second cutting liquid onto both side faces of the rotating blade 18. The feed pipe 32h extending from the second bubble generator 41 to the second nozzle unit π is longer than the feed pipe 32f extending from the first bubble generator 39 to the second nozzle unit 15. In the cutting device 200 as described above, since the feed pipe 32f extending from the first bubble generator 39 to the first nozzle unit 15 is extended from the second bubble generator 41 to the feed pipe 32h of the second nozzle unit π Short (in FIG. 6, the first foam generator 39 is disposed before the first nozzle unit 15 via the feed pipe 32f), so that the fine foam containing liquid generated by the first foam generator 39 is supplied through the feed pipe. The time from the lead 32f to the first nozzle unit 15 is shorter than the time at which the fine foam containing liquid generated by the second bubble generator 41 is guided to the second nozzle unit 17 by the feed pipe 32h. Therefore, since the first cutting fluid is sprayed onto the end surface of the semiconductor wafer W on the cut side of the blade 18, the fine foam contains the fine foam growth in the liquid 17 201234468 (4) The state is called the paste, and the paste 2_liquid spray = two sides: The fine bubble is contained in the fine bubble of the liquid, and the size of the fine beads contained in the fine U foam containing liquid which the first nozzle unit 15 is sprayed as the first paste to the blade 18 is smaller than The second nozzle unit 17 is sprayed as the second cutting fluid to the size of the fine bubble contained in the fine bubble containing liquid of the blade 18; conversely, the second cutting fluid can be sprayed to the knife > The size of the fine foam contained in the fine material containing the liquid towel is larger than the size of the fine foam contained in the fine foam containing liquid which is sprayed to the blade 18 as the first cutting fluid. Therefore, in the cutting device 2, as in the case of the cutting device 100 of the first embodiment, the first cutting fluid containing small droplets (ultra-microbubbles) having a small size is sprayed from the first nozzle unit 15 to The blade 18 is cut into the end surface of the semiconductor wafer W side, and a second cutting liquid nozzle containing a large size of fine bubbles (microbubbles) is attached from the second nozzle unit 17 to both side faces of the blade 18, The rotating blade 18 cuts the semiconductor wafer W. At this time, it is possible to effectively utilize the buffering action of the large-sized fine bubble Bbl in the sigma-cut sputum of the cutting shovel (see FIG. 3) and the larger size of the second cutting fluid. The fine blister bed Bb2 acts to float the stalk and prevent the load on the rotating blade from increasing the load. Further, in the above-described cutting device 2, the first foam generator 39 and the second foam generator 41 having different sizes of bubbles are respectively provided, but the first foam generator 39 and the second foam generator 39 may be provided. The foam generator 41 produces a fine foam of the same size. Even in such a case, since the feed pipe 32f extending from the second foam generator % to the first nozzle unit 15 is extended from the second bubble generator 41 201234468 • to the feed pipe 32h of the second nozzle unit 17 Therefore, the size of the fine foam contained in the first cutting fluid discharged from the first nozzle unit 15 is smaller than the size of the fine foam contained in the second cutting fluid discharged from the second nozzle unit 17. Further, for example, it is also possible to configure only a single foam generator (common foam generator) which produces fine foam of a small size. At this time, the length of the feed pipe from the single bubble generator to the first nozzle unit 15 is set shorter than the length of the feed pipe from the single bubble generator to the second nozzle unit 17. According to the above configuration, the time from when the fine bubble-containing beads generated by the single-bubble generator to the first nozzle unit 15 is different from the time until the second nozzle unit is used, The size of the fine foam in the fine foam containing liquid which is sprayed from the first nozzle unit 15 as the first cutting fluid to the insert 18 can be made smaller than that from the second nozzle unit 17 as the second cutting fluid to the insert 18 The fine bubble swimming contains the size of the fine bubble in the liquid. This can achieve the following situation: that is, the size of the material contained in the W-thickener produced by the single-bubble bead generator, or the size of the following The foaming is determined by considering the size of the fine beads generated by the bubble generator and the size of the fine money contained in the i-th cutting fluid to determine the feed between the hiding device and the first nozzle unit 15. The length of the tube 'for example, is such that it can be supplied to the length of the second nozzle unit 15 in a state in which the generation of the beads is as small as possible, and on the other hand, the size of the fine foam generated by the bubble generator is considered. The thickness of the second cutting fluid The size of the beads determines the length of the feed tube between the foam generator and the second nozzle unit 17, for example, the length of the bubble generated by the bubble generator can be moved between the feed tubes It grows into a fine bubble of the size required by the second cutting fluid, and is supplied from 19 201234468 to the second nozzle unit 17. Thereby, the size of the fine foam generated by the bubble generator and the cutting fluid are considered. The size of the fine foam required by the binder is determined by the length of each of the feed tubes between the single material and the nozzle units, which can be separately supplied to each nozzle unit. More specifically, : Producing ultra-fine bubbles by cutting the single-material generator, and then making the first cutting fluid of the (four) single-material generator to the second nozzle unit 15 to maintain the ultra-fine bubble state The length that can be discharged from the second nozzle unit 15; on the other hand, the length of the delivery from the single-bubble generator to the second nozzle unit 17 is a fine foam containing microbubbles and growing into microbubbles. The second cutting fluid can be discharged from the second nozzle unit 17 In addition, the length setting of the feed pipe, etc., varies depending on the type of cutting fluid used, the flow rate, etc., and is confirmed and set by experiments, etc. Further, the first foam generator 39 extends to the first a feed 32f of the nozzle unit 15 and a feedthrough f32h extending from the second foam generator 41 to the second nozzle unit 17, or a feed pipe and a feed pipe extending from the single bubble generator to the second nozzle unit 15 The single foam generator extends to the second nozzle unit to feed the tube, and is not limited to the straight tube. For example, a spiral tube can be used. In this case, the length of the spiral tube can be set according to the number of coils (the winding diameter is In the above embodiment, the number of the feedthroughs from the single foam generator to the second nozzle unit 15 is set to be higher than that from the single foam generator to the second nozzle unit 17. The number of tubes is small. Further, in the cutting device 200, the fine foam is generated in the liquid by the pressure opening, but other methods such as a rotary type or a porous substance may be used. In addition, the cutting device 1〇〇, 2〇〇 has been described, but the present invention is also applicable to 20 201234468, a cutting device for cutting a plate, or another machining device such as a polishing device, and in the present specification, These are collectively referred to as cutting, and the working fluid used is referred to as a cutting fluid. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view showing a basic configuration of a machining device (cutting device) according to a first embodiment of the present invention. Fig. 2 is a view showing the relationship between the blade and the cutting fluid sprayed on the blade in the cutting device shown in Fig. 1. Fig. 3 is a schematic cross-sectional view (1) showing the relationship between the blade, the slit formed in the semiconductor wafer, and the fine bubble in the cutting fluid. Fig. 4 is a schematic cross-sectional view showing the relationship between the blade, the slit formed in the semiconductor wafer, and the fine foam in the cutting fluid (Part 2). Figure 5 is a diagram showing the relationship between the blade and the cutting fluid sprayed onto the blade. Fig. 6 is a view showing a machining device (cutting device) according to a second embodiment of the present invention. 15. The first nozzle unit (first cutting fluid spraying mechanism) 151.. nozzle hole 16... second foam generating unit (second cutting fluid generating mechanism) 17... second nozzle unit 17 (second cutting fluid) Spraying mechanism) [Main component symbol description 11, 31... reservoirs 12a, 12b, 12c, 12d, 12e, 12f, 32a, 32b, 32c, 32d, 32e, 32g, 32f, 32h... 33···豕14...first foam generating unit (first cutting fluid generating mechanism) 21 201234468 17a, 17b···second nozzle unit 171a, 171b···nozzle hole 18.. blade Tool) 19.. Rotating shaft 20... Chuck table 21.. Support portion 22... Cutting body unit 34.. Gas supply unit 35.. Flow regulating valve 36.. Pressurizing tank 37.. Pressure Regulators 38a, 38b... Flow Regulating Valve 39.. First Foam Generator (First Foam Containing Liquid Generating Mechanism) 41.. Second Foam Generator (Second Foam Containing Liquid Generating Mechanism) 100 , 200... Cutting device A, B... Arrow Bbl, Bb2..·fine foam C...direction 5.. .liquid
Sa...氣體含有液 Sb...氣體溶存液 Sc...切削溝 W...半導體晶圓 22Sa...gas-containing liquid Sb...gas-dissolving solution Sc...cutting groove W...semiconductor wafer 22