TW201233851A - Plating processing apparatus and plating processing method and storage medium storing a plating processing program - Google Patents

Plating processing apparatus and plating processing method and storage medium storing a plating processing program Download PDF

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TW201233851A
TW201233851A TW100138892A TW100138892A TW201233851A TW 201233851 A TW201233851 A TW 201233851A TW 100138892 A TW100138892 A TW 100138892A TW 100138892 A TW100138892 A TW 100138892A TW 201233851 A TW201233851 A TW 201233851A
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plating
substrate
treatment liquid
plating treatment
supply means
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TW100138892A
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Chinese (zh)
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TWI479054B (en
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Takashi Tanaka
Yusuke Saito
Mitsuaki Iwashita
Takayuki Toshima
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Tokyo Electron Ltd
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/14—Arrangements for controlling delivery; Arrangements for controlling the spray area for supplying a selected one of a plurality of liquids or other fluent materials or several in selected proportions to a spray apparatus, e.g. to a single spray outlet
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00—Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/50—Multilayers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05B—SPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B12/00—Arrangements for controlling delivery; Arrangements for controlling the spray area
    • B05B12/02—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery
    • B05B12/04—Arrangements for controlling delivery; Arrangements for controlling the spray area for controlling time, or sequence, of delivery for sequential operation or multiple outlets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D1/00—Processes for applying liquids or other fluent materials
    • B05D1/02—Processes for applying liquids or other fluent materials performed by spraying
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C23C18/1632—Features specific for the apparatus, e.g. layout of cells and of its equipment, multiple cells
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1651—Two or more layers only obtained by electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/54—Contact plating, i.e. electroless electrochemical plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells

Abstract

Disclosed is a plating apparatus (1) which plates a substrate (2) by supplying plating solutions to the surface of the substrate. The plating apparatus (1) has: a substrate rotating/holding means (25), which rotates and holds the substrate (2); a plurality of plating solution supply means (29, 30), which supply a plurality of kinds of plating solutions having different compositions to the surface of the substrate (2); a plating solution discharging means (31), which discharges the plating solutions by each kind, said plating solutions having been scattered from the substrate (2); and a control means (32), which controls the substrate rotating/holding means (25), the plating solution supply means (29, 30), and the plating solution discharging means (31). The surface of the substrate (2) is plated a plurality of times in sequence by sequentially supplying the different plating solutions to the surface of the substrate (2), while rotating and holding the substrate (2).

Description

201233851 六、發明說明： '【發明所屬之技術領域】 本發明是有關用以對基板的表面供給電鍍處理液來進 行電鍍處理的電鍍處理裝置及電鍍處理方法以及記錄電鍍 處理程式的記錄媒體。 1 術 技 前 先 近年來，半導體晶圓或液晶基板等的基板爲了在表面 形成電路而被施以配線。此配線是取代鋁素材，而利用電 阻低可靠度高的銅素材。而且，銅素材的配線基於表面容 易氧化且焊錫的接合強度低等的理由，以鈀、鎳、金來依 序電鍍處理表面（例如參照專利文獻1 )。 以往，在對基板的配線依序進行複數的電鍍處理時， 是在電鐽處理裝置的內部設置：用以對基板實施鍍鈀的鍍 鈀處理單元、及用以對基板實施鍍鎳的鍍鎳處理單元、及 用以對基板實施鍍金的鍍金處理單元、及用以進行基板的 洗淨的洗淨單元、及用以進行基板的乾燥的乾燥單元、及 用以在各單元間搬送基板的搬送單元，利用搬送單元;來將 基板依序搬送至各單元，而進行複數的電鏟處理。 〔先行技術文獻：） 〔專利文獻〕 〔專利文獻1〕特開2005-298 1 0號公報 【發明內容】 -5- 201233851 (發明所欲解決的課題） 可是上述以往的電鍍處理裝置是形成分別獨立個別地 設置進行不同的電鍍處理的處理單元之構成，因此電鍍處 理裝置會大型化。 又，由於上述以往的電鍍處理裝置需要一邊以搬送單 元來將基板依序搬送至各單元，一邊分成複數次來進行電 鍍處理，因此處理時間會變長，處理能力會降低。 (用以解決課題的手段） 於是，本發明係對基板的表面供給電鍍處理液而進行 電鍍處理的電鍍處理裝置，具有： 基板旋轉保持手段，其係用以保持旋轉基板； 複數的電鍍處理液供給手段，其係用以對基板的表面 供給組成不同的複數種類的電鏟處理液； 電鍍處理液排出手段，其係用以按各種類排出從基板 飛散的電鍍處理液；及 控制手段，其係用以控制前述基板旋轉保持手段、前 述複數的電鍍處理液供給手段及前述電鍍處理液排出手段 〇 又，前述控制手段係以前述基板旋轉保持手段來保持 旋轉前述基板的狀態，依序驅動前述複數的電鍍處理液供 給手段，而對基板的表面依序實施複數的電鍍處理。 又，前述複數的電鍍處理液排出手段係使排出口上下 層疊而設成多段，且設置用以使前述基板旋轉保持手段及 -6- 201233851 前述複數的電鍍處理液排出手段相對性地昇降的昇降手段 0 又，前述控制手段係驅動前述昇降手段，按照種類從 不同的電鍍處理液排出手段來排出從前述複數的電鍍處理 液供給手段所供給的電鏟處理液。 ' 又，更具有： 洗淨處理液供給手段，其係用以對基板的表面供給洗 淨處理液； 洗滌處理液供給手段，其係用以對基板的表面供給洗 滌處理液；及 處理液排出手段，其係用以排出從基板飛散的洗淨處 理液及洗滌處理液。 又，前述複數的電鍍處理液排出手段係分別具有排出 流路，且將各排出流路分歧成電鍍處理液回收流路及電鍍 處理液廢棄流路。 又，前述控制手段係於洗淨處理液或洗滌處理液混入 至排出的電鍍處理液時，以能夠從電鍍處理液廢棄流路廢 棄的方式控制前述電鍍處理液排出手段》 又，前述複數的電鍍處理液供給手段係具有：供給用 以進行置換電鍍的電鍍處理液之置換電鍍處理液供給手段 、及供給用以進行化學還原電鍍的電鍍處理液之化學還原 電鍍處理液供給手段，前述控制手段係驅動置換電鍍處理 液供給手段之後驅動化學還原電鍍處理液供給手段。 又，本發明係對基板的表面供給電鍍處理液而進行電 201233851 鍍處理的電鍍處理裝置，其特徵係具有： 複合電鍍處理單元，其係對基板的表面依序實施複數 種類的電鍍處理： 單發電鍍處理單元，其係用以對基板的表面實施1種 類的電鍍處理；及 基板搬送單元，其係於前述複合電銨處理單元與單發 電鍍處理單元之間進行基板的搬送， 前述複合電鍍處理單元係具有： 基板旋轉保持手段，其係用以保持旋轉基板： 複數的電鍍處理液供給手段，其係用以對基板的表面 供給組成不同的複數種類的電鍍處理液； 電鍍處理液排出手段，其係用以按各種類排出從基板 飛散的電鍍處理液；及 控制手段，其係用以控制前述基板旋轉保持手段、前 述複數的電鍍處理液供給手段及前述電鍍處理液排出手段 〇 又，前述控制手段係控制成在前述複合電鍍處理單元 對基板的表面依序實施複數種類的電鍍處理之後，用前述 基板搬送單元從前述複合電鍍處理單元往前述單發電鍍處 理單元搬送，在前述單發電鍍處理單元對基板的表面實施 1種類的電鍍處理。 又，將前述複合電鍍處理單元的個數設爲比前述單發 電鍍處理單元的個數更多。 又，前述控制手段係按照從前述複數的電鍍處理液供 -8- 201233851 給手段所供給的電鍍處理液的種類來變更前述基板旋轉保 持手段的旋轉速度。 又，前述控制手段係以供給至基板的表面之電鍍處理 液的量爲周緣部要比基板的中心部更多的方式控制前述電 鍍處理液供給手段。 又，前述控制手段係以供給至基板的表面之處理液的 溫度爲周緣部要比基板的中心部更高的方式控制前述電鍍 處理液供給手段。 又，具有用以使前述基板的溫度上昇的基板溫度上昇 手段，基板溫度上昇手段係構成使以高溫流體來膨賬的袋 狀構件接觸於基板的背面，而令基板的溫度上昇。 又，前述控制手段係按照從前述複數的電鍍處理液供 給手段所供給的電鍍處理液的種類來變更前述基板溫度上 昇手段的加熱溫度。 又，本發明係對基板的表面供給電鍍處理液而進行電 鍍處理的電鑛處理方法，從複數的電鍍處理液供給手段依 序供給組成不同的複數種類的電鍍處理液至基板的表面， 而對基板的表面依序實施複數的電鍍處理。 又，按照種類從不同的電鍍處理液排出手段來排出從 前述複數的電鍍處理液供給手段所供給的電鍍處理液。 又，本發明係對基板的表面供給電鍍處理液而進行電 鍍處理的電鍍處理方法，使用複合電鍍處理單元，從複數 的電鍍處理液供給手段依序供給組成不同的複數種類的電 鍍處理液至基板的表面，而對基板的表面依序實施複數的 -9 - 201233851 電鍍處理，然後’從複合電鍍處理單元搬送基板至單發電 鍍處理單元，使用單發電鍍處理單元，從電鍍處理液供給 手段供給1種類的電鍍處理液至基板的表面，而對基板的 表面實施電鍍處理。 又，本發明的記錄媒體，係記錄供以使用電鍍處理裝 置來電鍍處理基板的表面之電鍍處理程式，該電鍍處理裝 置係具有： 基板旋轉保持手段，其係用以保持旋轉基板： 複數的電鍍處理液供給手段，其係用以對基板的表面 供給組成不同的複數種類的電鍍處理液； 複數的電鍍處理液排出手段，其係爲了按各種類排出 從基板飛散的電鍍處理液，而設成多段：及 昇降手段，其係用以使前述基板旋轉保持手段與前述 複數的電鍍處理液排出手段相對性地昇降， 依序驅動前述複數的電鍍處理液供給手段，對基板的 表面依序實施複數的電鍍處理，且驅動前述昇降手段，按 照種類從不同的電鍍處理液排出手段來排出從前述複數的 電鍍處理液供給手段所供給的電鍍處理液。 〔發明的效果〕 由於本發明是設置用以對基板的表面供給不同的電鍍 處理液之複數的電鍍處理液供給手段，所以可使用1個電 鍍處理裝置來進行複數種類的電鍍處理，因此可謀求電鍍 處理裝置的小型化。 -10- 201233851 並且，本發明是保持旋轉基板的狀態將不同的電鍍處 理液依序供給至基板的表面，而對基板的表面依序實施複 數的電鍍處理，因此可縮短電鍍處理所要的處理時間’進 而可使處理能力提升。 而且，本發明是對基板的表面依序實施複數的電鍍處 理，藉此可防止基板的表面氧化來對基板的表面良好地實 施電鍍處理。 【實施方式】 以下，一邊參照圖面一邊說明有關本發明的電鍍處理 裝置及電鍍處理方法以及電鍍處理程式的具體的構成。 如圖1所示，電鍍處理裝置1是在前端部形成用以藉 由載體3來匯集搬入及搬出複數片（例如25片）基板2( 在此是半導體晶圓）的基板搬出入台4，且在基板搬出入 台4的後部形成用以按預定片數來搬入及搬出在載體3所 收容的基板2的基板搬出入室5，在基板搬出入室5的後 部形成用以進行基板2的電鍍處理或洗淨處理等各種的處 理的基板處理室6。 基板搬出入台4是構成可使4個的載體3緊貼在基板 搬出入室5的前壁7的狀態下左右取間隔來載置。 基板搬出入室5是在前側形成收容搬送裝置8的搬送 室9 ’且在後側形成收容基板交接台〗〇的基板交接室j i ，經由交接口 12來連通連結搬送室9與基板交接室11。 而且，基板搬出入室5是在利用搬送裝置8來載置於 -11 - 201233851 基板搬出入台4的任一個的載體3與基板交ΐ 各預定片數搬入及搬出基板2。 基板處理室6是在中央部形成延伸於前後 單元1 3，在基板搬送單元1 3的一方側前後排 可依序進行複數種類的電鍍處理的複合電 14〜17，且在基板搬送單元13的另一方側前後 個的複合電鍍處理單元18，19及2個可進行 鍍處理的單發電鍍處理單元20，21。 基板搬送單元13是在內部收容一構成可 方向的基板搬送裝置22，且經由基板搬出入口 至基板交接室II的基板交接台10。 而且’基板處理室6是利用基板搬送單7U 搬送裝置22，在基板交接室11與複合電 14~ 19或單發電鍍處理單元20，21之間或複合 元19與單發電鍍處理單元20，21之間， 平保持的狀態下搬送基板2，且在各電鍍處理 各1片洗淨處理及電鍍處理基板2。 6個的複合電鍍處理單元Μ〜19是同樣的 個的單發電鍍處理單元20，21也是同樣的構 在以下的說明是針對複合電鍍處理單元14及 理單元20的構成來進行說明。 複合電鍍處理單元14是如圖2及圖3所牙 基板旋轉保持手段25，其係於外箱24的 基板2保持於水平的狀態下旋轉； 穿台1 0之間 :的基板搬送 列形成4個 鍍處理單兀 :排列形成2 1種類的電 移動於前後 I 23來連通 ;13的基板 鑛處理單元 電鍍處理單 以各1片水 單元 14~21 構成，且2 成。因此， 單發電鑛處 :般收容： 內部用以使 -12- 201233851 洗淨處理液供給手段26，其係用以對基板2 處理液； 洗滌處理液供給手段27，其係用以對基板2 處理液； 乾燥處理手段2 8，其係用以對基板2供給乾 來使基板2乾燥·， 複數的電鍍處理手段（在此是供給用以對基 置換電鍍的電鍍處理液的置換電鍍處理液供給手 供給用以對基板2實施化學還原電鍍的電鍍處理 還原電鍍處理液供給手段30);及 處理液排出手段31 (電鍍處理液排出手段） 以將供給至基板2的各種處理液（洗淨處理液、 液、乾燥處理液、電鍍處理液）排出， 且在該等的基板旋轉保持手段25、洗淨處理 段26、洗滌處理液供給手段27、乾燥處理手段 處理液供給手段（置換電鍍處理液供給手段29 原電鍍處理液供給手段3 0 )及處理液排出手段： 制手段3 2。另外，控制手段3 2是可驅動控制電 置1的全體。 基板旋轉保持手段25是在外箱24中轉動自 一延伸於上下的中空圓筒狀的旋轉軸33，且在ί 的上端部水平地安裝轉盤34，在轉盤34的上面 圓周方向取間隔安裝晶圓吸盤3 5。 並且，基板旋轉保持手段25是在旋轉軸33 供給洗淨 供給洗滌 燥處理劑 板2實施 段29、及 液的化學 ，其係用 洗滌處理 液供給手 28、電鍍 及化學還 Π連接控 鍍處理裝 如地安裝 定轉軸33 外周部於 連接旋轉 -13- 201233851 機構3 6。旋轉機構3 6是連接至控制手段3 2，藉由控制手 段3 2來驅動控制。 然後，基板旋轉保持手段25是藉由旋轉機構36來使 旋轉軸3 3旋轉，隨之，可使在晶圓吸盤3 5水平保持的基 板2旋轉。 洗淨處理液供給手段26是以對基板2的表面供給洗 淨處理液的第1及第2洗淨處理液供給手段26a，26b及 對基板2的背面供給洗淨處理液的第3洗淨處理液供給手 段26c所構成。 第1洗淨處理液供給手段26a是在外箱24的一方側 轉動自如地安裝一延伸於上下的支撐軸37，在支撐軸37 連接馬達或致動器等的旋轉機構38，且在支撐軸37的上 端部水平安裝臂39的基端部，在臂39的前端部安裝噴嘴 頭40，在噴嘴頭40朝下方（基板2的上面）安裝噴嘴41 ，經由流量調整閥43來連接對此噴嘴41供給包含氫氟酸 等的無機酸或包含蘋果酸等的有機酸所構成的藥液作爲洗 淨處理液的洗淨處理液供給源42。旋轉機構38及流量調 整閥43是連接至控制手段32，藉由控制手段32來控制。 第2洗淨處理液供給手段26b是在外箱24的另一方 側轉動自如地安裝一延伸於上下的支撐軸44，在支撐軸 44連接馬達或致動器等的旋轉機構45，且在支撐軸44的 上端部水平安裝臂46的基端部，在臂46的前端部安裝噴 嘴頭47，在噴嘴頭47朝下方（基板2的上面）安裝噴嘴 48，經由流量調整閥50來連接對此噴嘴48供給包含氫氟 -14- 201233851 酸等的無機酸或包含蘋果酸等的有機酸所構成的藥液作爲 洗淨處理液的洗淨處理液供給源49 (亦可與洗淨處理液供 給源42同一）。旋轉機構45及流量調整閥50是連接至 控制手段32，藉由控制手段32來控制。 第3洗淨處理液供給手段26c是在外箱24中固定圓 筒狀的軸體51，且將軸體51取間隔收容於基板旋轉保持 手段25的旋轉軸33的中空部，在軸體51形成噴嘴52, 經由流量調整閥54來連接對此噴嘴52供給包含氫氟酸等 的無機酸或包含蘋果酸等的有機酸所構成的藥液作爲洗淨 處理液的洗淨處理液供給源5 3 (亦可與洗淨處理液供給源 42，49同一）。流量調整閥54是連接至控制手段32，藉 由控制手段3 2來控制。 而且，洗淨處理液供給手段26是藉由旋轉機構38( 45 )來使支撐軸37(44)旋轉，藉此使噴嘴41 (48)從 基板2的外周部外方的退避位置到基板2的中心部上方的 供給位置爲止移動於基板2的上方，從噴嘴4 1 ( 4 8 )供給 在流量調整閥43 ( 50 )調整後的流量的洗淨處理液至基板 2的上方、或從噴嘴52供給在流量調整閥54調整後的流 量的洗淨處理液至基板2的下方。另外，洗淨處理液的供 給亦可將噴嘴41 (48)配置於基板2的中心部上方，朝基 板2的中心部上方供給洗淨處理液，且亦可使噴嘴4 1 ( 4 8 )在基板2的中心部上方與外周端緣部上方之間一邊移動 一邊朝基板2的上面供給洗淨處理液。 洗滌處理液供給手段27也是以對基板2的表面供給 -15- 201233851 洗滌處理液的第1及第2洗滌處理液供給手段27a 及對基板2的背面供給洗滌處理液的第3洗滌處理液 手段27c所構成。 第1洗滌處理液供給手段2 7a是與第1洗淨處理 給手段26a共有支撐軸37、旋轉機構38、臂39、噴 40，在噴嘴頭40安裝噴嘴55，經由流量調整閥57來 對噴嘴5 5供給作爲洗滌處理液的純水之洗滌處理液 源56。流量調整閥57是連接至控制手段32，藉由控 段3 2來控制。 第2洗滌處理液供給手段27b是與第2洗淨處理 給手段26b共有支撐軸44、旋轉機構45、臂46、噴 47，在噴嘴頭47安裝噴嘴58，經由流量調整閥60來 對噴嘴58供給作爲洗滌處理液的純水之洗滌處理液 源59 (亦可與洗滌處理液供給源56同一）。流量調 60是連接至控制手段32，藉由控制手段32來控制。 第3洗滌處理液供給手段27c是與第3洗淨處理 給手段2 6c共有軸體51，在軸體51形成噴嘴61，經 量調整閥63來連接對噴嘴61供給作爲洗滌處理液的 之洗滌處理液供給源62 (亦可與洗滌處理液供給源 59同一）。流量調整閥63是連接至控制手段32，藉 制手段32來控制。 而且，洗滌處理液供給手段27是藉由旋轉機構 45 )來使支撐軸3 7 ( 44 )旋轉，藉由使噴嘴55 ( 58 基板2的外周部外方的退避位置到基板2的中心部上 ，27b 供給 液供 嘴頭 連接 供給 制手 液供 嘴頭 連接 供給 整閥 液供 由流 純水 56， 由控 38 ( )從 方的 -16- 201233851 供給位置爲止移動於基板2的上方，從噴嘴5 5 ( 5 8 )供給 在流量調整閥57 ( 60 )調整後的流量的洗漉處理液至基板 2的上方、或從噴嘴61供給在流量調整閥63調整後的流 量的洗滌處理液至基板2的下方。另外，洗滌處理液的供 給亦可將噴嘴5 5 (58)配置於基板2的中心部上方’朝基 板2的中心部上方供給洗滌處理液，且亦可使噴嘴5 5 ( 5 8 )在基板2的中心部上方與外周端緣部上方之間一邊移動 —邊朝基板2的上面供給洗滌處理液。 乾燥處理手段28是以進行基板2的表面的乾燥處理 的第1乾燥處理手段28a及進行_板2的背面的乾燥處理 的第2乾燥處理手段2 8b所構成。， 第1乾燥處理手段28a是與第1洗淨處理液供給手段 26a及第1洗滌處理手段27a共有支撐軸37、旋轉機構38 、臂39、噴嘴頭40，在噴嘴頭4(l·安裝噴嘴64，經由流量 調整閥66來連接對噴嘴64供給作爲乾燥處理液的IP A ( 異丙醇）之乾燥處理液供給源65。流量調整閥66是連接 至控制手段3 2，藉由控制手段3 2來控制。 第2乾燥處理手段2 8 b是與第3洗淨處理液供給手段 26c及第3洗滌處理液供給手段27c共有軸體51，在軸體 5 1形成噴嘴6 7 ’經由流量調整閥6 9來連接對噴嘴6 7供 給作爲乾燥處理劑的氮之乾燥處理劑供給源68。流量調整 閥69是連接至控制手段32，藉由控制手段32來控制。 而且’乾燥處理手段28是藉由旋轉機構38來使支撐 軸37旋轉’藉此使噴嘴64從基板2的外周部外方的退避 -17- 201233851 位置到基板2的中心部上方的供給位置爲止移動於基板2 的上方，從噴嘴64供給在流量調整閥66調整後的流量的 乾燥處理液至基板2的上方、或從噴嘴67供給在流量調 整閥69調整後的流量的乾燥處理劑至基板2的下方。另 外，乾燥處理液的供給亦可將噴嘴64配置於基板2的中 心部上方，朝基板2的中心部上方供給乾燥處理液，且亦 可使噴嘴64在基板2的中心部上方與外周端緣部上方之 間一邊移動一邊朝基板2的上面供給乾燥處理液。 置換電鍍處理液供給手段29是與第1洗淨處理液供 給手段26a及第1洗滌處理手段27a以及第1乾燥處理手 段28a共有支撐軸37、旋轉機構38、臂39、噴嘴頭40， 在噴嘴頭40安裝噴嘴70，經由流量調整閥72來連接對噴 嘴7 〇供給例如含有鈀的電鍍處理液作爲用以進行置換電 鍍的電鍍處理液之置換電鍍處理液供給源7 1。流量調整閥 72是連接至控制手段32，藉由控制手段32來控制。另外 ，置換電鍍處理液供給源7 1是以預定的溫度來供給置換 電鍍處理液。 而且，置換電鍍處理液供給手段29是藉由旋轉機構 38來使支撐軸37旋轉，藉此使噴嘴70從基板2的外周部 外方的退避位置到基板2的中心部上方的供給位置爲止移 動於基板2的上方，從噴嘴7〇供給在流量調整閥72調整 後的流量的置換電鍍處理液至基板2的上方。另外’置換 電鍍處理液的供給亦可將噴嘴7〇配置於基板2的中心部 上方，朝基板2的中心部上方供給置換電鍍處理液’且亦 -18- 201233851 可使噴嘴70在基板2的中心部上方與外周端緣部上方之 間一邊移動一邊朝基板2的上面供給置換電鍍處理液。 化學還原電鍍處理液供給手段30是與第2洗淨處理 液供給手段26b及第2洗滌處理手段27b共有支撐軸44、 旋轉機構45、膂46、噴嘴頭47，在噴嘴頭47安裝噴嘴 73，經由流量調整閥75來連接對噴嘴73供給例如含有鎳 或鈷的電鍍處理液作爲用以進行化學還原電鍍的電鍍處理 液之化學還原電鍍處理液供給源74。流量調整閥75是連 接至控制手段32，藉由控制手段32來控制。另外，化學 還原電鑛處理液供給源74是以預定的溫度來供給化學還 原電鍍處理液。 而且，化學還原電鍍處理液供給手段30是藉由旋轉 機構45來使支撐軸44旋轉，藉此使噴嘴73從基板2的 外周部外方的退避位置到基板2的中心部上方的供給位置 爲止移動於基板2的上方，從噴嘴73供給在流量調整閥 75調整後的流量的化學還原電鍍處理液至基板2的上方。 另外，化學還原電鍍處理液的供給亦可將噴嘴73配置於 基板2的中心部上方，朝基板2的中心部上方供給化學還 原電鍍處理液，且亦可使噴嘴73在基板2的中心部上方 與外周端緣部上方之間一邊移動一邊朝基板2的上面供給 化學還原電鍍處理液。 處理液排出手段31是在轉盤34的外方配置用以將處 理後的各處理液排出之具有使上下層疊3段的排出口 76 ’ 77，78之杯79，經由流路切換器84，85來分別連接回收 -19· 201233851 流路8 0，8 1及廢棄流路8 2，8 3至最上段及中段的排出口 76，77，且在最下段的排出口 79連接廢棄流路86。流路 切換器84，85是連接至控制手段32，藉由控制手段32來 控制。在此，回收流路8 0，8 1是用以在回收處理液後可 再利用的流路，廢棄流路8 2，8 3，8 6是用以廢棄處理液 的流路。 並且，處理液排出手段31是在杯79連接昇降機構87 。昇降機構8 7是連接至控制手段3 2，藉由控制手段3 2來 驅動控制。另外，昇降機構87是使杯79對於基板2相對 性地昇降者，亦可設於基板旋轉保持手段25來使基板2 昇降" 而且，處理液排出手段31是以昇降機構87來使杯79 昇降，藉此使任一個排出口 76，77，78位於基板2的正 外方，按種類排出從基板2飛散的處理液，且藉由流路切 換器84，85來將流路切換成回收流路80，81，藉此可將 在排出口 7 6，7 7回收的處理液再利用，且藉由流路切換 器84，85來將流路切換成廢棄流路82，83，藉此可將在 排出口 76，77及排出口 78回收的處理液廢棄。 單發電鍍處理單元20是如圖4所示，與複合電鍍處 理單元1 4同樣，在外箱8 8的內部收容基板旋轉保持手段 25、洗淨處理液供給手段26 (第1及第3洗淨處理液供給 手段26a，26c)、洗滌處理液供給手段27 (第1及第3 洗滌處理液供給手段27a，27c)、乾燥處理手段28 (第1 及第2乾燥處理手段28a，28b) 、1個的電鍍處理液供給 -20- 201233851 手段（置換電鍍處理液供給手段29)及處理液排出手段 31 ’且將該等的基板旋轉保持手段25、洗淨處理液供給手 段2 6、洗滌處理液供給手段2 7、乾燥處理手段2 8、置換 電鍍處理液供給手段29及處理液排出手段31連接至控制 手段32 » 在此單發電鑛處理單元20是只設置置換電鍍處理液 供給手段29，作爲電鍍處理液供給手段，化學還原電鍍處 理液供給手段3 0是未設置。 並且，在單發電鍍處理單元20是使用例如含有金的 電鍍處理液，作爲在置換電鍍處理液供給手段29所供給 之用以進行置換電鍍的電鍍處理液。 如此，電鍍處理裝置1的構成是形成具有： 複合電鍍處理單元14〜19，其係於外箱24的內部收容 基板旋轉保持手段25、複數的電鍍處理液供給手段（在此 是置換電鍍處理液供給手段29及化學還原電鍍處理液供 給手段30)及電鍍處理液排出手段（處理液排出手段31 )，用以對基板2的表面依序實施複數的電鍍處理；及 單發電鍍處理單元20，21，其係於外箱88的內部收 容基板旋轉保持手段25、一個的電鍍處理液供給手段（在 此是置換電鍍處理液供給手段29)及電鑛處理液排出手段 (處理液排出手段31)，用以對基板2的表面實施1次的 電鍍處理；及 基板搬送單元13，其係於複合電銨處理單元14-19與 單發電鍍處理單元20，21之間進行基板2的搬送。 -21 - 201233851 因此，電鍍處理裝置1是按照對基板2實施的電鍍處 理的種類來適當分開使用複合電鍍處理單元1 4〜19及/或 單發電鍍處理單元2〇’ 21。 並且，在上述電鍍處理裝置1是使複合電鍍處理單元 14〜19的個數（在此是4個）形成比單發電鑛處理單元20 ，21的個數（在此是2個）更多，因此可有效率地運轉處 理時間長的複合電鑛處理單元14〜19及處理時間短的單發 電鍍處理單元20，21 ’可使電鍍處理裝置1的處理能力提 升。 而且，在上述電鍍處理裝置1是使鍍金從複合電鍍處 理單元14~ 19分離，在單發電鍍處理單元20，21進行， 因此可使複合電鍍處理單元14〜19的保守性提升，且例如 可在複合電鍍處理單元14〜19進行鍍鈀及鑛鎳（或鈷）或 鍍鈀之後在單發電鍍單元20，21對鈀或鎳（或鈷）的表 面實施鍍金，可按照電鍍處理分開處理。尤其上述電鍍處 理裝置1是以複合電鑛處理單元14〜19來進行含有鎳或鈀 等的酸性的電鍍處理液之電鍍處理，在單發電鍍處理單元 20，21進行含有金等的鹼性的電鍍處理液之電鍍處理，藉 此可使環境不同的處理不會混合。 電鍍處理裝置1是構成以上說明那樣，可按照設在控 制手段3 2的記錄媒體8 9所記錄的各種的程式來以控制手 段3 2驅動控制，進行基板2的處理。在此，記錄媒體8 9 是儲存各種的設定資料或後述的電鍍處理程式等的各種的 程式’可使用電腦可讀取的ROM或RAM等的記憶體、或 -22- 201233851 硬碟、CD-ROM、DVD-ROM或軟碟等的碟狀記億媒體等 的周知者。 而且，電鍍處理裝置1是按照設於控制手段32的記 錄媒體89中所記錄的電鍍處理程式來如以下說明那樣對 基板2實施電鍍處理（參照圖5)。另外，以下的說明是 針對在複合電鍍處理單元14藉由置換電鍍來對基板2施 以鍍鈀後藉由化學還原電鍍來施以鍍鎳，然後，在單發電 鍍處理單元20藉由置換電鍍來對基板2施以鍍金的情況 進行說明。 首先、電鍍處理程式是實行基板搬入工程》 在此基板搬入工程是利用基板搬送單元13的基板搬 送裝置22來將].片的基板2從基板交接室11搬入至複合 電鍍處理單元14。 此時，電鍍處理程式是在複合電鍍處理單元14中， 實行基板接受工程。 在此基板接受工程中，如圖6所示，藉由昇降機構87 來使杯79下降至預定位置，以水平保持於晶圓吸盤3 5的 狀態來接受從基板搬送裝置22搬入至外箱24的內部的1 片基板2，然後，藉由昇降機構87來使杯79上昇至最下 段的排出口 7 8與基板2的外周端緣對向的位置。此時’ 電鍍處理程式是藉由旋轉機構38，45來使支撐軸37 ’ 44 旋轉，而令噴嘴頭40，47退避至轉盤34的外周外方的退 避位置。 其次，電鍍處理程式是在複合電鍍處理單元14中， -23- 201233851 實行基板前洗淨工程。 在此基板前洗淨工程中，如圖7所示，藉由基板旋轉 保持手段25的旋轉機構36來使旋轉軸33旋轉，藉此使 基板2與轉盤34 —起旋轉，且藉由第1洗滌處理液供給 手段27a的旋轉機構38來使支撐軸37旋轉，而令噴嘴55 移動至基板2的中心部上方的供給位置。然後，在第1洗 滌處理液供給手段27a的流量調整閥57調整成預定的流 量，從噴嘴5 5朝基板2的上面供給洗滌處理液。藉此， 進行基板2的上面的洗滌處理。處理後的洗滌處理液是在 處理液排出手段3 1的杯79的最下段的排出口 78被回收 ，從廢棄流路8 6廢棄。然後，停止第1洗滌處理液供給 手段27a之洗滌處理液的供給。 然後，在基板前洗淨工程中，如圖8所示，藉由第1 洗淨處理液供給手段26a的旋轉機構38來使支撐軸37旋 轉，而令噴嘴4 1移動至基板2的中心部上方的供給位置 。然後，在第1洗淨處理液供給手段26a的流量調整閥43 調整成預定的流量，從噴嘴4 1朝基板2的上面供給洗淨 處理液。藉此，進行基板2的上面的洗淨處理。處理後的 洗淨處理液是在處理液排出手段3 1的杯79的最下段的排 出口 78被回收，從廢棄流路86廢棄。然後，停止第1洗 淨處理液供給手段26a之洗淨處理液的供給。另外，不僅 基板2的上面，亦可藉由洗淨處理液來洗淨外周端緣部。 然後，在基板前洗淨工程是與洗淨處理前的洗滌處理 同樣進行基板2的上面的洗滌處理（參照圖7)。 -24- 201233851 其次，電鍍處理程式是在複合電鍍處理單元14中， 在基板前洗淨工程的洗滌處理之後不久的基板2未乾燥的 狀態下實行置換電鍍處理工程。如此，在基板2未乾燥的 狀態下實行置換電鍍處理工程，可防止基板2的被電鏟面 的銅等氧化無法良好地進行置換電銨處理。 在此置換電鍍處理工程中，如圖9所示，維持藉由基 板旋轉保持手段25的旋轉機構36來使基板2旋轉，且利 用處理液排出手段31的昇降機構87來使杯79下降至中 段的排出口 77與基板2的外周端緣所對向的位置，藉由 置換電鍍處理液供給手段29的旋轉機構38來使支撐軸37 旋轉，而令噴嘴70移動至基板2的中心部上方的供給位 置。然後，在置換電鍍處理液供給手段29的流量調整閥 72調整成預定的流量，從噴嘴70朝基板2的上面供給含 鈀之常溫的置換電鍍處理液。藉此，在基板2的上面藉由 置換電鍍來實施鍍鈀。處理後的置換電鍍處理液是在處理 液排出手段31的杯79的中段的排出口 77被回收，藉由 切換流路切換器85，洗滌處理液或洗淨處理液與置換電鍍 處理液混合時，從廢棄流路83廢棄，洗滌處理液或洗淨 處理液未混合時，從回收流路81回收，再利用回收後的 置換電鍍處理液。然後，停止置換電鍍處理液供給手段29 之置換電鍍處理液的供給。另外，流路切換器8 5的流路 切換是可時間性地切換流路，或藉由感測器來檢測出洗滌 處理液的有無，而來切換流路。 在此置換電鍍處理工程中，亦可控制成使置換電鍍處 -25- 201233851 理液供給手段29的噴嘴70在基板2的外周部要比基板2 的內周部更放慢移動速度，或增多電鍍處理液的吐出量， 或提高所吐出的電鍍處理液的溫度，藉此使基板2的溫度 形成均一。 然後，在置換電鍍處理工程是與基板前洗淨工程的洗 滌處理同樣進行基板2的上面的洗滌處理（參照圖7)。 其次，電鍍處理程式是在複合電鍍處理單元14中， 實行基板中間洗淨工程。另外，基板中間洗淨工程亦可省 略。 此基板中間洗淨工程是以第1洗滌處理液供給手段 2 7a來洗滌處理基板的上面，且以第3洗淨處理液供給手 段26a來洗淨處理基板的下面之後以第3洗滌處理液供給 手段27c來洗滌處理基板的下面，然後，藉由旋轉機構38 來使支撐軸37旋轉，而令噴嘴頭40退避至轉盤34的外 周外方的退避位置。 其次，電鍍處理程式是在複合電鍍處理單元14中， 接續於基板中間洗淨工程（在省略基板中間洗淨工程時是 置換電鍍處理工程）的洗滌處理，實行化學還原電鍍處理 工程》如此，在複合電鍍處理單元14中可在1個的單元 內部進行置換電鍍處理工程及化學還原電鍍處理工程，因 此在置換電鍍處理工程與化學還原電鍍處理工程之間不必 搬送基板2可省略基板2的乾燥處理，因此可使處理能力 提升，且可防止基板2的表面氧化來對基板2的表面良好 地實施電鍍處理。 -26 - 201233851 在此化學還原電鍍處理工程中，如圖10所示， 基板旋轉保持手段25的旋轉機構36來使轉盤34以 換電鍍處理工程的旋轉速度更低速旋轉，藉此使基板 速旋轉，利用處理液排出手段31的昇降機構87來使 下降至最上段的排出口 76與基板2的外周端緣所對 位置，且藉由化學還原電鍍處理液供給手段30的旋 構45來使支撐軸44旋轉，而令噴嘴73移動至基板 中心部上方的供給位置。然後，在化學還原電鍍處理 給手段30的流量調整閥75調整成預定的流量，從噴 朝基板2的上面供給含鎳之高溫（8(TC~85t )的化學 電鍍處理液。藉此，在基板2的上面藉由化學還原電 實施鍍鎳。處理後的化學還原電鍍處理液是在處理液 手段31的杯79的最上段的排出口 76被回收，藉由 流路切換器84，洗滌處理液或洗淨處理液與化學還原 處理液混合時，從廢棄流路82廢棄，洗滌處理液或 處理液未混合時，從回收流路8 0回收，再利用回收 化學還原電鍍處理液。然後，停止化學還原電鍍處理 給手段3 0之化學還原電鍍處理液的供給。另外，流 換器84的流路切換可時間性地切換流路，或藉由感 來檢測出洗滌處理液的有無，而來切換流路。 在此化學還原電鍍處理工程中是以比置換電鍍處 程的基板2的旋轉速度更低速來使基板2旋轉。如此 照從複數的電銨處理液供給手段（置換電鍍處理液供 段29及化學還原電鍍處理液供給手段30)供給的電 藉由 比置 2低 杯79 向的 轉機 2的 液供 嘴73 還原 鍍來 排出 切換 電鍍 洗淨 後的 液供 路切 測器 理工 ，按 給手 鑛處 -27- 201233851 理液的種類（溫度）來變更基板旋轉保持手段25之基板2 的旋轉速度，藉此使基板2旋轉，可抑制基板2或電鏟處 理液因放熱而被冷卻，特別是在使用高溫的電鍍處理液時 ，藉由降低基板2的旋轉速度，可抑制電鍍處理液的溫度 降低來對基板2良好地實施預定的厚度之均一的電鍍。 並且，在化學還原電鍍處理工程中是從與置換電鑛處 理工程的杯79的排出口 77不同的排出口 76來排出化學 還原電鍍處理液，按照電鍍處理液的種類來從不同的排出 口 76，77排出電鍍處理液，防止電鍍處理液的混合。 在此化學還原電鍍處理工程中也是亦可控制成使化學 還原電鍍處理液供給手段30的噴嘴73在基板2的外周部 要比基板2的內周部更放慢移動速度，或增多電鍍處理液 的吐出量，或提高所吐出的電鍍處理液的溫度，藉此使基 板2的溫度形成均一。 然後，在化學還原電鍍處理工程中，如圖11所示， 藉由處理液排出手段31的昇降機構87來使杯79上昇至 最下段的排出口 78與基板2的外周端緣所對向的位置， 且藉由第2洗滌處理液供給手段27b的旋轉機構45來使 支撑軸44旋轉’而令噴嘴58移動至基板2的中心部上方 的供給位置。然後’在第2洗滌處理液供給手段27b的流 量調整閥60調整成預定的流量，從噴嘴58朝基板2的上 面供給洗滌處理液。藉此’進行基板2的上面的洗滌處理 。處理後的洗滌處理液是在處理液排出手段3丨的杯7 9的 最下段的排出口 78被回收，從廢棄流路86廢棄。然後， -28- 201233851 停止第2洗滌處理液供給手段27b之洗滌處理液的供給。 其次，電鍍處理程式是在複合電鍍處理單元14中， 實行基板後洗淨工程。 在此基板後洗淨工程中，如圖12所示，藉由第2洗 淨處理液供給手段26b的旋轉機構45來使支撐軸44旋轉 ，而令噴嘴48移動至基板2的中心部上方的供給位置。 然後，在第2洗淨處理液供給手段26b的流量調整閥50 調整成預定的流量，從噴嘴48朝基板2的上面供給洗淨 處理液。藉此，進行基板2的上面的洗淨處理。處理後的 洗淨處理液是在處理液排出手段31的杯79的最下段的排 出口 78被回收，從廢棄流路86廢棄。然後，停止第2洗 淨處理液供給手段26b之洗淨處理液的供給。另外，不僅 基板2的上下面，亦可藉由洗淨處理液來洗淨外周端緣部 。並且，亦可使用與基板前洗淨工程不同種類的洗淨處理 液。 然後，在基板後洗淨工程是以第1洗滌處理液供給手 段2 7a來洗滌處理基板的上面，且以第3洗淨處理液供給 手段26c來洗淨處理基板的下面之後.以第3洗滌處理液供 給手段27c來洗滌處理基板的下面，然後，藉由旋轉機構 45來使支撐軸44轉動，而令噴嘴頭47移動至基板2的外 周外方的退避位置。 其次，電鍍處理程式是在複合電鍍處理單元14中， 實行基板乾燥工程。 在此基板乾燥工程中，如圖13所示’藉由第1乾燥 -29- 201233851 噴 在 噴 處 嘴 的 出 流 87 水 搬 送 > 基 板 工 處理手段28a的旋轉機構38來使支撐軸37旋轉，而令 嘴64移動至基板2的中心部上方的供給位置。然後， 乾燥處理段28的流量調整閥66調整成預定的流量，從 嘴64朝基板2的上面供給乾燥處理液’且在第2乾燥 理手段2 8b的流量調整閥69調整成預定的流量，從噴 67朝基板2的下面供給乾燥處理劑。藉此’進行基板2 上下面的乾燥處理。處理後的乾燥處理液是在處理液排 手段31的杯79的最下段的排出口 78被回收，從廢棄 路86廢棄。然後’停止第1及第2乾燥處理手段28a 2 8b的乾燥處理，藉由旋轉機構38來使支撐軸37轉動 而令噴嘴頭40移動至基板2的外周外方的退避位置。 其次，電鍍處理程式是實行基板交接工程。 在此基板交接工程，如圖14所示，藉由昇降機構 來使杯79下降至預定位置，將在基板旋轉保持手段25 平保持的狀態的基板2交接至基板搬送裝置22。 其次，電鍍處理程式是實行基板搬送工程。 在此基板搬送工程是利用基板搬送單元13的基板 送裝置22來將1片的基板2從複合電鍍處理單元14搬 至單發電鍍處理單元20。 然後，電鍍處理程式是在單發電鍍處理單元20中 與上述複合電鍍處理單元14的各工程同樣，依序實行 板接受工程、基板前洗淨工程、置換電鍍處理工程、基 後洗淨工程、基板乾燥工程、基板交接工程。 在此單發電鍍處理單元20中，作爲置換電鍍處理 -30- 201233851 程，是使用含有金的電鍍處理液，藉由置換電鍍來對基板 2實施鍍金。 此時，與在複合電鍍處理單元14的化學還原電鍍處 理工程同樣，以比在複合電鑛處理單元14的置換電鍍處 理工程的旋轉速度更低速來使基板2旋轉，且從置換電鍍 處理液供給源71供給含有金之高溫（80°C〜85°C)的置換 電鍍處理液。另外，在單發電鍍處理單元20是連與洗滌 處理液混合的置換電鍍處理液也回收。 最後，電鏟處理程式是實行基板搬出工程。 在此基板搬出工程是利用基板搬送單元13的基板搬 送裝置22來將1片的基板2從單發電鍍處理單元20搬出 至基板交接室1 1。 如以上說明那樣，在上述電鍍處理裝置1設置用以對 基板2的表面供給不同種類的電鍍處理液（在此是含有含 鈀置換電鍍處理液及含鎳化學還原電鍍處理液）之複數的 電鍍處理液供給手段（在此是置換電鏟處理液供給手段29 及化學還原電鍍處理液供給手段30)，因此可謀求電鍍處 理裝置1的小型化。並且，保持旋轉基板2的狀態對基板 2的表面依序供給不同的電鍍處理液，而對基板2的表面 依序實施複數的電鍍處理，因此可省去基板2的搬送或乾 燥所要的時間，可縮短電鍍處理所要的處理時間，進而可 使電鍍處理裝置1的處理能力提升。而且，藉由對基板2 的表面依序實施複數的電鍍處理，可防止基板2的表面氧 化來對基板2的表面良好地實施電鍍處理。 -31 - 201233851 上述電鍍處理裝置1是以高溫的電鍍處理液來實施 鍍處理時使基板2以低速旋轉，藉此防止電鍍處理液的 度降低，但亦可藉由用以使電鑛處理的基板2的溫度上 的基板溫度上昇手段來防止電鍍處理液的溫度降低。 例如圖15所示，基板溫度上昇手段90是在轉盤 的上部配置甜甜圈袋狀具有可撓性的膨脹收縮自如的加 體9 1，在儲存加熱後的流體（加熱流體：可爲液體或氣 )的槽92連接循環流路93，在循環流路93的去路側經 開閉閥94來連接加熱體9 1，且在循環流路93的回路側 由吸引泵95來連接加熱體91，使加熱器96內藏於槽 的內部。開閉閥94、吸引泵95及加熱器96是連接至控 手段32、藉由控制手段32來控制。另外，使噴嘴52， ，67位於加熱體91的中央部分，而是不會妨礙來自噴 5 2，6 1，6 7的處理液的吐出。 而且，基板溫度上昇手段90是預先藉由加熱器96 將儲存於槽92的加熱流體加熱至預定的加熱溫度，藉 開放開閉閥94且驅動吸引泵95，將加熱流體供給至加 體91，利用其供給壓力來使加熱體91膨脹而令接觸（ 貼）於基板2的下面（背面），從基板2的下面加熱基 2而使溫度上昇。另外，基板溫度上昇手段90是藉由閉 開閉閥94且僅預定時間驅動吸引泵95，自加熱體9 1吸 加熱流體，利用其吸引壓力來使加熱體91收縮，而使 基板2的下面與轉盤34之間確保從噴嘴52，61，67吐 的處理液所流動的間隙。 電 溫 昇 34 熱 體 由 經 92 制 6 1 嘴 來 由 熱 緊 板 塞 引 在 出 -32- 201233851 此基板溫度上昇手段90是在袋狀的加熱體91的內部 供給加熱流體，藉此使加熱流體與各種處理液不會混合。 另外，基板溫度上昇手段90亦可按照電鍍處理液的 種類（溫度）來變更加熱流體的加熱溫度。 並且，基板溫度上昇手段90是將基板2的下面區劃 成複數的區域，按各區域來配置不同的加熱體，藉此使基 板2的下面按各區域（例如基板2的內周部側的區域與外 周部側的區域）上昇基板2的溫度，更確實地抑制被供給 至基板2的電鍍處理液的溫度降低，可使電鍍溫度均一化 ，使電鍍厚均一化。 【圖式簡單說明】 圖1是表示電鍍處理裝置的平面圖。 圖2是表示複合電銨處理單元的側面圖。 圖3是同平面圖。 圖4是表示單發電鍍處理單元的側面圖。 圖5是表示電鏟處理方法的工程圖。 圖6是同動作說明圖。 圖7是同動作說明圖。 圖8是同動作說明圖。 圖9是同動作說明圖。 圖10是同動作說明圖。 圖11是同動作說明圖。 圖12是同動作說明圖。 -33- 201233851 圖1 3是同動作說明圖。 圖14是同動作說明圖。 圖1 5是表示基板溫度上昇的側面圖。 【主要元件符號說明】 1 :電鍍處理裝置 2 :基板 3 :載體 4 :基板搬出入台 5 :基板搬出入室 6 :基板處理室 7 :前壁 8 :搬送裝置 9 :搬送室 1 〇 :基板父接台 1 1 :基板交接室 12 :交接口 1 3 :基板搬送單元 14〜19:複合電鍍處理單元 20，21 :單發電鍍處理單元 22 :基板搬送裝置 23 :基板搬出入口 24 :外箱 25 :基板旋轉保持手段 -34- 201233851 26 :洗淨處理液供給手段 27 :洗漉處理液供給手段 28 :乾燥處理手段 29 :置換電鍍處理液供給手段 3 0 :化學還原電鍍處理液供給手段 3 1 :處理液排出手段 3 2 :控制手段 33 :旋轉軸 3 4 :轉盤 3 5 :晶圓吸盤 36 :旋轉機構 37 :支撐軸 3 8 :旋轉機構 39 :臂 40 :噴嘴頭 41 :噴嘴 42 :洗淨處理液供給源 43 :流量調整閥 44 :支撐軸 45 :旋轉機構 46 :臂 47 :噴嘴頭 48 :噴嘴 49 :洗淨處理液供給源 -35- 201233851 5 0 :流量調整閥 5 1 :軸體 52 :噴嘴 5 3 :洗淨處理液供給源 54 :流量調整閥 5 5 :噴嘴 5 6 :洗滁處理液供給源 5 7 :流量調整閥 5 8 :噴嘴 5 9 :洗滌處理液供給源 6 0 :流量調整閥 6 1 :噴嘴 62 :洗滌處理液供給源 6 3 :流量調整閥 64 :噴嘴 6 5 :乾燥處理液供給源 66 :流量調整閥 67 :噴嘴 6 8 :乾燥處理劑供給源 69 :流量調整閥 7 0 :噴嘴 7 1 :置換電鍍處理液供給源 7 2 :流量調整閥 73 :噴嘴 -36 201233851 74 :化學還原電鍍處理液供給源 75 :流量調整閥 76， 77， 78:排出口 79 :杯 8 0，8 1 :回收流路 8 2，8 3 :廢棄流路 84，85 :流路切換器 8 6 :廢棄流路 8 7 :昇降機構 8 8 :外箱 8 9 :記錄媒體 90 :基板溫度上昇手段 9 1 :加熱體 92 :槽 93 :循環流路 94 :開閉閥 95 :吸引泵 9 6 _·加熱器 -37 -201233851 VI. [Technical Field] The present invention relates to a plating processing apparatus, a plating processing method, and a recording medium for recording a plating processing program for supplying a plating treatment liquid to a surface of a substrate. 1 Prior to the Invention In recent years, substrates such as semiconductor wafers and liquid crystal substrates have been subjected to wiring in order to form a circuit on the surface. This wiring replaces aluminum material and utilizes copper material with low resistance and high reliability. In addition, the wiring of the copper material is plated with palladium, nickel, gold in the order of the reason that the surface is easily oxidized and the bonding strength of the solder is low (see, for example, Patent Document 1). Conventionally, when a plurality of plating processes are performed on the wiring of the substrate, a palladium plating processing unit for performing palladium plating on the substrate and nickel plating for plating the substrate are provided inside the electric discharge processing apparatus. a processing unit, a gold plating processing unit for performing gold plating on the substrate, a cleaning unit for cleaning the substrate, a drying unit for drying the substrate, and a substrate for transporting the substrate between the units The unit uses a transport unit to sequentially transport the substrates to the respective units, and performs a plurality of shovel treatments. [PRIOR ART DOCUMENT: [Patent Document 1] [Patent Document 1] JP-A-2005-298 No. 1 (Invention) - 5 - 201233851 (Problems to be Solved by the Invention) However, the above conventional plating treatment apparatus is formed separately Since the configuration of the processing unit that performs different plating processes is separately provided, the plating processing apparatus is increased in size. In addition, in the above-described conventional plating apparatus, it is necessary to carry out the plating process in a plurality of times by sequentially transporting the substrate to each unit by the transport unit, so that the processing time becomes long and the processing capability is lowered. (Means for Solving the Problem) The present invention relates to a plating treatment apparatus that supplies a plating treatment liquid to a surface of a substrate and performs a plating treatment, and has: a substrate rotation holding means for holding a rotating substrate; and a plurality of plating treatment liquids a supply means for supplying a plurality of types of shovel treatment liquids having different compositions to the surface of the substrate; a plating treatment liquid discharge means for discharging the plating treatment liquid scattered from the substrate in various types; and a control means And a method of controlling the substrate rotation holding means, the plurality of plating treatment liquid supply means, and the plating treatment liquid discharge means, wherein the control means maintains the state in which the substrate is rotated by the substrate rotation holding means, and sequentially drives the A plurality of plating treatment liquid supply means are provided, and a plurality of plating processes are sequentially performed on the surface of the substrate. In addition, the plurality of plating treatment liquid discharge means are provided in a plurality of stages in which the discharge ports are stacked one on another, and that the substrate rotation holding means and the above-mentioned plurality of plating treatment liquid discharge means are relatively raised and lowered. In the meantime, the control means drives the lifting means to discharge the shovel processing liquid supplied from the plurality of plating treatment liquid supply means from different plating treatment liquid discharge means. Further, the present invention further includes: a cleaning treatment liquid supply means for supplying a cleaning treatment liquid to the surface of the substrate; and a washing treatment liquid supply means for supplying the washing treatment liquid to the surface of the substrate; and discharging the treatment liquid The means for discharging the cleaning treatment liquid and the washing treatment liquid scattered from the substrate. Further, the plurality of plating treatment liquid discharge means each have a discharge flow path, and each discharge flow path is divided into a plating treatment liquid recovery flow path and a plating treatment liquid disposal flow path. In addition, when the cleaning treatment liquid or the cleaning treatment liquid is mixed into the discharge plating treatment liquid, the plating treatment liquid discharge means can be controlled so as to be able to be discarded from the plating treatment liquid disposal flow path. The treatment liquid supply means includes a replacement plating solution supply means for supplying a plating treatment liquid for performing replacement plating, and a chemical reduction plating treatment liquid supply means for supplying a plating treatment liquid for performing chemical reduction plating, and the control means is The chemical reduction plating treatment liquid supply means is driven after driving the replacement plating treatment liquid supply means. Further, the present invention relates to a plating treatment apparatus which supplies a plating treatment liquid to a surface of a substrate and performs an electric 201233851 plating treatment, and is characterized in that the composite plating processing unit sequentially performs a plurality of types of plating treatment on the surface of the substrate: a plating treatment unit for performing one type of plating treatment on the surface of the substrate; and a substrate transfer unit for transferring the substrate between the composite electro-ammonium processing unit and the single-electrode plating processing unit, the composite plating The processing unit has: a substrate rotation holding means for holding the rotating substrate: a plurality of plating treatment liquid supply means for supplying a plurality of types of plating treatment liquids having different compositions to the surface of the substrate; And a control means for controlling the substrate rotation holding means, the plurality of plating treatment liquid supply means, and the plating treatment liquid discharge means, respectively, for controlling the substrate to be scattered from the substrate; The foregoing control means is controlled to be based on the aforementioned composite plating processing unit After the surface sequentially embodiment a plurality of types of plating, with the substrate transfer unit from said composite plating unit to the single plating processing unit conveyance, a type of the plating process performed on the surface of the substrate in the single plating process unit. Further, the number of the composite plating treatment units is set to be larger than the number of the single-electrode plating treatment units. Further, the control means changes the rotational speed of the substrate rotation holding means in accordance with the type of the plating treatment liquid supplied from the plurality of plating treatment liquids -8 - 201233851. In addition, the control means controls the plating solution supply means such that the amount of the plating treatment liquid supplied to the surface of the substrate is such that the peripheral portion is larger than the central portion of the substrate. Further, the control means controls the plating solution supply means such that the temperature of the processing liquid supplied to the surface of the substrate is higher than the center portion of the substrate. Further, there is provided a substrate temperature increasing means for increasing the temperature of the substrate, and the substrate temperature increasing means is configured to bring the bag-like member which is expanded by the high-temperature fluid into contact with the back surface of the substrate to raise the temperature of the substrate. Further, the control means changes the heating temperature of the substrate temperature rising means in accordance with the type of the plating treatment liquid supplied from the plurality of plating treatment liquid supply means. Further, the present invention relates to an electrowinning treatment method in which a plating treatment liquid is supplied to a surface of a substrate to perform a plating treatment, and a plurality of plating treatment liquids having different compositions are sequentially supplied from a plurality of plating treatment liquid supply means to the surface of the substrate. The surface of the substrate is subjected to a plurality of plating processes in sequence. Further, the plating treatment liquid supplied from the plurality of plating treatment liquid supply means is discharged from different plating treatment liquid discharge means in accordance with the type. Moreover, the present invention is a plating treatment method in which a plating treatment liquid is supplied to a surface of a substrate to perform a plating treatment, and a plurality of plating treatment liquids having different compositions are sequentially supplied from a plurality of plating treatment liquid supply means to the substrate using a composite plating processing unit. The surface of the substrate is sequentially subjected to a plurality of -9 - 201233851 plating treatments, and then the substrate is transferred from the composite plating processing unit to the single-electrode plating processing unit, and the single-electrode plating processing unit is used to supply the plating treatment liquid supply means. One type of plating treatment liquid is applied to the surface of the substrate, and the surface of the substrate is subjected to a plating treatment. Further, the recording medium of the present invention records a plating processing program for plating a surface of a substrate by using a plating processing apparatus, the plating processing apparatus having: a substrate rotation holding means for holding a rotating substrate: a plurality of plating The treatment liquid supply means for supplying a plurality of types of plating treatment liquids having different compositions to the surface of the substrate; and a plurality of plating treatment liquid discharge means for discharging the plating treatment liquid scattered from the substrate in various types. And a plurality of stages: and a lifting means for relatively elevating and lowering the substrate rotation holding means and the plurality of plating treatment liquid discharge means, sequentially driving the plurality of plating treatment liquid supply means, and sequentially performing plural numbers on the surface of the substrate In the plating process, the plating method is used to discharge the plating solution supplied from the plurality of plating solution supply means in accordance with the type from the different plating solution discharge means. [Effects of the Invention] The present invention provides a plating treatment liquid supply means for supplying a plurality of different plating treatment liquids to the surface of the substrate. Therefore, it is possible to perform a plurality of types of plating treatment using one plating processing apparatus. The electroplating treatment device is miniaturized. -10- 201233851 Further, in the present invention, different plating treatment liquids are sequentially supplied to the surface of the substrate while maintaining the state of rotating the substrate, and a plurality of plating treatments are sequentially performed on the surface of the substrate, so that the processing time required for the plating treatment can be shortened. 'In turn, the processing power can be improved. Further, in the present invention, a plurality of plating processes are sequentially performed on the surface of the substrate, whereby the surface of the substrate can be prevented from being oxidized to perform a plating treatment on the surface of the substrate. [Embodiment] Hereinafter, a specific configuration of a plating treatment apparatus, a plating treatment method, and a plating treatment program according to the present invention will be described with reference to the drawings. As shown in FIG. 1, the plating processing apparatus 1 is formed with a substrate carrying-in/out station 4 for collecting and carrying in a plurality of (for example, 25) substrates 2 (here, semiconductor wafers) by a carrier 3 at a front end portion. In the rear portion of the substrate loading/unloading table 4, a substrate loading/unloading chamber 5 for loading and unloading the substrate 2 accommodated in the carrier 3 is formed in a predetermined number of sheets, and a plating process for performing the substrate 2 is performed in the rear portion of the substrate loading/unloading chamber 5. Or the substrate processing chamber 6 of various processes such as washing treatment. The substrate loading/unloading table 4 is configured such that four carriers 3 can be placed in close contact with each other in a state in which the carrier 3 is brought into close contact with the front wall 7 of the substrate. In the substrate loading/unloading chamber 5, a transfer chamber 9' for accommodating the transfer device 8 is formed on the front side, and a substrate transfer chamber ji for accommodating the substrate transfer table is formed on the rear side, and the transfer transfer chamber 9 and the substrate transfer chamber 11 are communicated via the interface 12. In the substrate loading/unloading chamber 5, the carrier 3 placed on the substrate loading/unloading table 4 of the -11 - 201233851 by the transfer device 8 is transferred to and from the substrate by a predetermined number of sheets. The substrate processing chamber 6 is formed with a composite electric device 14 to 17 which is formed in the center portion and extends to the front and rear unit 13 and sequentially performs a plurality of types of plating treatment on the front side of the substrate transport unit 13 in the front and rear rows, and is in the substrate transport unit 13 The other side of the composite plating processing unit 18, 19 and the two single-plate plating processing units 20, 21 which can be plated. The substrate transfer unit 13 is a substrate transfer table 10 that accommodates a substrate transfer device 22 that can form a direction and that carries the substrate to the substrate transfer chamber II via the substrate. Further, the 'substrate processing chamber 6 is a substrate transport unit 7U transport unit 22, between the substrate transfer chamber 11 and the composite electric unit 14 to 19 or the single-electrode plating processing unit 20, 21 or the composite unit 19 and the single-electrode plating processing unit 20, Between 21, the substrate 2 is conveyed while being held flat, and each of the plating processes is subjected to one cleaning treatment and the substrate 2 is plated. The six composite plating processing units Μ to 19 are the same single-shot plating processing units 20 and 21, and the same configuration is described below. The configuration of the composite plating processing unit 14 and the processing unit 20 will be described. The composite plating processing unit 14 is a tooth substrate rotation holding means 25 as shown in FIGS. 2 and 3, and is rotated in a state in which the substrate 2 of the outer case 24 is held horizontally; and a substrate transfer column is formed between the stages 10: Each of the plating treatment units is arranged such that 21 types of electric movement are transmitted in front and rear I 23 to communicate; and 13 substrate ore processing unit plating treatment is composed of one water unit 14 to 21 and 20%. Therefore, the single power generation mine is generally housed: the inside is used to make the -12-201233851 cleaning treatment liquid supply means 26 for the substrate 2 treatment liquid; the washing treatment liquid supply means 27 is used for the substrate 2 The treatment liquid 2; the drying treatment means 2, which is used for supplying the substrate 2 to dry the substrate 2, and a plurality of plating treatment means (here, a replacement plating treatment liquid for supplying a plating treatment liquid for plating the base replacement plating) The supply hand supplies a plating treatment reduction plating treatment liquid supply means 30) for performing chemical reduction plating on the substrate 2, and a treatment liquid discharge means 31 (electroplating treatment liquid discharge means) to supply various treatment liquids to the substrate 2 (washing The processing liquid, the liquid, the drying treatment liquid, and the plating treatment liquid are discharged, and the substrate rotation holding means 25, the cleaning processing section 26, the washing processing liquid supply means 27, and the drying processing means processing liquid supply means (displacement plating treatment) Liquid supply means 29 Original plating treatment liquid supply means 3 0) and treatment liquid discharge means: means 3 2 . Further, the control means 32 is the entirety of the controllable control unit 1. The substrate rotation holding means 25 is rotated in the outer casing 24 from a hollow cylindrical rotating shaft 33 extending upward and downward, and the turntable 34 is horizontally mounted at the upper end portion of the turntable 34, and the wafer is mounted at intervals in the upper circumferential direction of the turntable 34. Suction cup 3 5. Further, the substrate rotation holding means 25 supplies the cleaning and supply of the washing and drying agent sheet 2 to the rotating shaft 33 to carry out the step 29 and the liquid chemistry, and the cleaning treatment liquid supply hand 28, electroplating, and chemical reductive connection control plating treatment. Install the fixed shaft 33 as the ground. The outer circumference is connected to the rotation -13 - 201233851 mechanism 3 6 . The rotating mechanism 36 is connected to the control means 32, and the control is driven by the control means 32. Then, the substrate rotation holding means 25 rotates the rotary shaft 33 by the rotation mechanism 36, whereby the substrate 2 held horizontally by the wafer chuck 35 can be rotated. The cleaning treatment liquid supply means 26 is the first and second cleaning treatment liquid supply means 26a, 26b for supplying the cleaning treatment liquid to the surface of the substrate 2, and the third cleaning for supplying the cleaning treatment liquid to the back surface of the substrate 2. The treatment liquid supply means 26c is constituted. The first cleaning treatment liquid supply means 26a is a rotatably attached support shaft 37 that extends upward and downward on one side of the outer casing 24, and a rotation mechanism 38 that connects a motor or an actuator to the support shaft 37, and is supported on the support shaft 37. The base end portion of the upper end horizontal mounting arm 39 is attached to the tip end portion of the arm 39, and the nozzle 41 is attached downward (the upper surface of the substrate 2) to the nozzle head 40, and the nozzle 41 is connected via the flow rate adjusting valve 43. A chemical solution containing a mineral acid such as hydrofluoric acid or an organic acid containing malic acid or the like is supplied as a cleaning treatment liquid supply source 42 of the cleaning treatment liquid. The rotating mechanism 38 and the flow regulating valve 43 are connected to the control means 32 and are controlled by the control means 32. The second cleaning treatment liquid supply means 26b is a rotatably attached support shaft 44 extending upward and downward to the other side of the outer casing 24, and a rotation mechanism 45 for connecting a motor or an actuator to the support shaft 44, and the support shaft The upper end portion of the upper end portion of the arm 44 is horizontally attached to the base end portion of the arm 46, the nozzle head 47 is attached to the front end portion of the arm 46, and the nozzle 48 is attached downward (on the upper surface of the substrate 2) to the nozzle head 47, and the nozzle is connected via the flow rate adjusting valve 50. 48. A chemical solution comprising a mineral acid such as hydrofluoric-14-201233851 acid or an organic acid containing malic acid or the like is supplied as a cleaning treatment liquid supply source 49 of the cleaning treatment liquid (may also be supplied to the cleaning treatment liquid supply source) 42 same). The rotation mechanism 45 and the flow rate adjustment valve 50 are connected to the control means 32 and are controlled by the control means 32. In the third cleaning treatment liquid supply means 26c, the cylindrical shaft body 51 is fixed to the outer casing 24, and the shaft body 51 is accommodated in the hollow portion of the rotation shaft 33 of the substrate rotation holding means 25 at intervals, and is formed in the shaft body 51. In the nozzle 52, a chemical solution containing a mineral acid such as hydrofluoric acid or an organic acid containing malic acid or the like is supplied to the nozzle 52 as a cleaning treatment liquid supply source for the cleaning treatment liquid. (The same as the cleaning treatment liquid supply sources 42, 49). The flow regulating valve 54 is connected to the control means 32 and is controlled by the control means 32. Further, the cleaning treatment liquid supply means 26 rotates the support shaft 37 (44) by the rotation mechanism 38 (45), thereby bringing the nozzle 41 (48) from the retracted position outside the outer peripheral portion of the substrate 2 to the substrate 2 The supply position above the center portion is moved above the substrate 2, and the cleaning treatment liquid having the flow rate adjusted by the flow rate adjustment valve 43 (50) is supplied from the nozzle 4 1 (48) to the upper side of the substrate 2 or from the nozzle. The cleaning treatment liquid supplied to the flow rate adjusted by the flow rate adjustment valve 54 is supplied to the lower side of the substrate 2. Further, the supply of the cleaning treatment liquid may be performed by disposing the nozzle 41 (48) above the center portion of the substrate 2, supplying the cleaning treatment liquid toward the upper portion of the center portion of the substrate 2, and also allowing the nozzle 4 1 (48) to The cleaning treatment liquid is supplied to the upper surface of the substrate 2 while moving between the upper portion of the center portion of the substrate 2 and the upper portion of the outer peripheral edge portion. The washing treatment liquid supply means 27 is also a first and second washing treatment liquid supply means 27a for supplying the -15-201233851 washing treatment liquid to the surface of the substrate 2, and a third washing treatment liquid means for supplying the washing treatment liquid to the back surface of the substrate 2. 27c constitutes. The first washing treatment liquid supply means 27a shares the support shaft 37, the rotation mechanism 38, the arm 39, and the spray 40 with the first cleaning processing means 26a, and the nozzle 55 is attached to the nozzle head 40, and the nozzle is connected to the nozzle via the flow rate adjusting valve 57. 5 5 A washing treatment liquid source 56 which is pure water as a washing treatment liquid is supplied. The flow regulating valve 57 is connected to the control means 32 and is controlled by the control section 32. The second washing treatment liquid supply means 27b shares the support shaft 44, the rotation mechanism 45, the arm 46, and the spray 47 with the second cleaning processing means 26b, and the nozzle 58 is attached to the nozzle head 47, and the nozzle 58 is attached to the nozzle 58 via the flow rate adjustment valve 60. A washing treatment liquid source 59 (which may be the same as the washing treatment liquid supply source 56) of pure water as a washing treatment liquid is supplied. The flow rate adjustment 60 is connected to the control means 32 and is controlled by the control means 32. In the third cleaning treatment liquid supply means 27c, the shaft body 51 is shared with the third cleaning processing means 26c, the nozzle 61 is formed in the shaft 51, and the cleaning valve 63 is connected to the nozzle 61 to supply the washing liquid as the washing liquid. The treatment liquid supply source 62 (may also be the same as the washing treatment liquid supply source 59). The flow rate adjustment valve 63 is connected to the control means 32 and is controlled by the means 32. Further, the washing treatment liquid supply means 27 rotates the support shaft 3 7 (44) by the rotation mechanism 45), and the nozzle 55 (the retracted position outside the outer peripheral portion of the substrate 2) is placed on the center portion of the substrate 2. 27b supply liquid supply head supply supply hand liquid supply head connection supply whole valve liquid supply flow pure water 56, the control 38 ( ) moves from the side of the -16 - 201233851 supply position above the substrate 2, from the nozzle 5 5 ( 5 8 ) The washing treatment liquid supplied to the flow rate adjustment valve 57 ( 60 ) is supplied to the upper side of the substrate 2 or the flow rate adjustment valve 63 is supplied from the nozzle 61 to the substrate. In addition, the supply of the washing treatment liquid may be such that the nozzle 5 5 (58) is disposed above the center portion of the substrate 2 to supply the washing treatment liquid to the upper portion of the center portion of the substrate 2, and the nozzle 5 5 (5) 8) Moving between the upper portion of the center portion of the substrate 2 and the upper portion of the outer peripheral edge portion, the washing treatment liquid is supplied to the upper surface of the substrate 2. The drying processing means 28 is the first drying treatment for drying the surface of the substrate 2. Means 28a and proceeding_board 2 The first drying processing means 28a is configured to share the support shaft 37, the rotating mechanism 38, and the arm with the first cleaning processing liquid supply means 26a and the first washing processing means 27a. 39. The nozzle head 40 is connected to the nozzle head 4 (l. mounting nozzle 64) via a flow rate adjusting valve 66 to supply a dry processing liquid supply source 65 for supplying IP A (isopropyl alcohol) as a drying treatment liquid to the nozzle 64. The valve 66 is connected to the control means 3 2 and is controlled by the control means 32. The second drying processing means 2 8b is a shaft body shared with the third cleaning processing liquid supply means 26c and the third cleaning processing liquid supply means 27c. 51, a nozzle 6 7 is formed in the shaft body 5 1 to supply a drying treatment agent supply source 68 for supplying nitrogen as a drying treatment agent to the nozzle 6 7 via a flow rate adjusting valve 6 9 . The flow rate adjusting valve 69 is connected to the control means 32, Control is performed by the control means 32. Further, the 'drying processing means 28 rotates the support shaft 37 by the rotating mechanism 38', whereby the nozzle 64 is retracted from the outer periphery of the substrate 2 to the position of the substrate 2 - 201233851 to the substrate 2 Supply above the center The drying treatment liquid which is moved to the upper side of the substrate 2 and is supplied with the flow rate adjustment valve 66 from the nozzle 64 to the upper side of the substrate 2 or the flow rate adjustment valve 69 is supplied from the nozzle 67 The supply of the drying treatment liquid may be such that the nozzle 64 is disposed above the center portion of the substrate 2, the drying treatment liquid is supplied to the upper portion of the substrate 2, and the nozzle 64 may be placed at the center of the substrate 2. The drying treatment liquid is supplied to the upper surface of the substrate 2 while moving between the upper portion and the upper portion of the outer peripheral edge portion. The replacement plating solution supply means 29 shares the support shaft 37, the rotation mechanism 38, the arm 39, and the nozzle head 40 with the first cleaning treatment liquid supply means 26a, the first washing processing means 27a, and the first drying processing means 28a. The nozzle 40 is attached to the head 40, and a plating treatment liquid containing, for example, palladium is supplied to the nozzle 7A via the flow rate adjustment valve 72 as a replacement plating solution supply source 71 for performing a plating treatment liquid for replacement plating. The flow regulating valve 72 is connected to the control means 32 and is controlled by the control means 32. Further, the displacement plating treatment liquid supply source 7 1 supplies the displacement plating treatment liquid at a predetermined temperature. Further, the replacement plating solution supply means 29 moves the support shaft 37 by the rotation mechanism 38, thereby moving the nozzle 70 from the retracted position outside the outer peripheral portion of the substrate 2 to the supply position above the center portion of the substrate 2. Above the substrate 2, a replacement plating treatment liquid having a flow rate adjusted by the flow rate adjustment valve 72 is supplied from the nozzle 7A to the upper side of the substrate 2. Further, the supply of the replacement plating treatment liquid may be such that the nozzle 7 is placed above the center portion of the substrate 2, and the replacement plating treatment liquid is supplied to the upper portion of the substrate 2, and the nozzle 70 is placed on the substrate 2 at -18-201233851. The displacement plating treatment liquid is supplied to the upper surface of the substrate 2 while moving between the upper portion of the center portion and the upper portion of the outer peripheral edge portion. The chemical reduction plating solution supply means 30 shares the support shaft 44, the rotation mechanism 45, the weir 46, and the nozzle head 47 with the second cleaning treatment liquid supply means 26b and the second washing processing means 27b, and the nozzle 73 is attached to the nozzle head 47. A plating treatment liquid for supplying a plating treatment liquid containing, for example, nickel or cobalt to the nozzle 73 as a plating treatment liquid for performing chemical reduction plating is connected via a flow rate adjustment valve 75. The flow rate adjustment valve 75 is connected to the control means 32 and is controlled by the control means 32. Further, the chemical reduction ore treatment liquid supply source 74 supplies the chemical reduction plating treatment liquid at a predetermined temperature. Further, the chemical reduction plating treatment liquid supply means 30 rotates the support shaft 44 by the rotation mechanism 45, thereby bringing the nozzle 73 from the retracted position outside the outer peripheral portion of the substrate 2 to the supply position above the center portion of the substrate 2. Moving above the substrate 2, the chemical reduction plating treatment liquid having a flow rate adjusted by the flow rate adjustment valve 75 is supplied from the nozzle 73 to the upper side of the substrate 2. Further, the supply of the chemical reduction plating treatment liquid may be such that the nozzle 73 is disposed above the center portion of the substrate 2, the chemical reduction plating treatment liquid is supplied toward the upper portion of the substrate 2, and the nozzle 73 may be placed above the center portion of the substrate 2. The chemical reduction plating treatment liquid is supplied to the upper surface of the substrate 2 while moving between the outer peripheral edge portion and the upper portion. The treatment liquid discharge means 31 is a cup 79 having a discharge port 76' 77, 78 for discharging the processed liquid to the outside of the turntable 34, and having the discharge ports 76' 77, 78 stacked in three stages, via the flow path switch 84, 85. The waste flow path 86 is connected to the discharge port 76, 77 of the uppermost and middle sections, and the discharge flow path 86 is connected to the discharge port 79 of the uppermost and middle sections, respectively. The flow path switches 84, 85 are connected to the control means 32 and are controlled by the control means 32. Here, the recovery flow paths 80, 8 1 are flow paths for recycling after the treatment liquid is recovered, and the waste flow paths 8 2, 8 3, and 8 6 are flow paths for discarding the treatment liquid. Further, the treatment liquid discharge means 31 is connected to the elevating mechanism 87 in the cup 79. The lifting mechanism 87 is connected to the control means 3 2 and is driven and controlled by the control means 32. Further, the elevating mechanism 87 is configured to elevate and lower the cup 79 relative to the substrate 2, and may be provided in the substrate rotation holding means 25 to elevate and lower the substrate 2. Further, the processing liquid discharge means 31 is a lifting mechanism 87 for the cup 79. By raising and lowering, any one of the discharge ports 76, 77, 78 is located outside the substrate 2, and the treatment liquid scattered from the substrate 2 is discharged by type, and the flow path is switched to be recovered by the flow path switches 84, 85. The flow paths 80, 81 can thereby reuse the treatment liquid recovered at the discharge ports 7.6, 7 7 and switch the flow paths to the waste flow paths 82, 83 by the flow path switches 84, 85. The treatment liquid recovered at the discharge ports 76, 77 and the discharge port 78 can be discarded. As shown in FIG. 4, the single-plate plating processing unit 20 houses the substrate rotation holding means 25 and the cleaning processing liquid supply means 26 (first and third cleaning) in the outer casing 88 as in the composite plating processing unit 14. Treatment liquid supply means 26a, 26c), washing treatment liquid supply means 27 (first and third washing treatment liquid supply means 27a, 27c), drying processing means 28 (first and second drying processing means 28a, 28b), 1 Electroplating treatment liquid supply -20-201233851 means (displacement plating treatment liquid supply means 29) and treatment liquid discharge means 31', and the substrate rotation holding means 25, the cleaning treatment liquid supply means 26, and the washing treatment liquid The supply means 27, the drying treatment means 28, the replacement plating treatment liquid supply means 29, and the treatment liquid discharge means 31 are connected to the control means 32. Here, the single generation ore processing unit 20 is provided with only the replacement plating treatment liquid supply means 29 as The plating treatment liquid supply means, and the chemical reduction plating treatment liquid supply means 30 are not provided. Further, in the single-shot plating processing unit 20, for example, a plating treatment liquid containing gold is used as a plating treatment liquid supplied for replacement plating by the replacement plating treatment liquid supply means 29. In this way, the plating processing apparatus 1 is configured to include: composite plating processing units 14 to 19 which house the substrate rotation holding means 25 and a plurality of plating treatment liquid supply means (here, the replacement plating treatment liquid) in the outer casing 24 The supply means 29, the chemical reduction plating treatment liquid supply means 30), and the plating treatment liquid discharge means (the treatment liquid discharge means 31) for sequentially performing a plurality of plating processes on the surface of the substrate 2, and the single-electrode plating processing unit 20, 21, which accommodates the substrate rotation holding means 25, one plating treatment liquid supply means (here, the replacement plating treatment liquid supply means 29), and the electric ore processing liquid discharge means (processing liquid discharge means 31) in the outer casing 88. The plating process is performed once on the surface of the substrate 2, and the substrate transfer unit 13 performs the transfer of the substrate 2 between the composite electrochemical ammonium processing unit 14-19 and the single-electrode plating processing units 20 and 21. -21 - 201233851 Therefore, the plating treatment apparatus 1 appropriately separates the composite plating processing units 14 to 19 and/or the single-electrode plating processing unit 2 〇' 21 in accordance with the type of plating treatment performed on the substrate 2. Further, in the above-described plating processing apparatus 1, the number of the composite plating processing units 14 to 19 (here, four) is formed more than the number of the single ore processing units 20 and 21 (here, two). Therefore, the composite electrowinning processing units 14 to 19 having a long processing time and the single-electroplating processing units 20, 21' having a short processing time can be efficiently operated to improve the processing capability of the plating processing apparatus 1. Further, in the above-described plating processing apparatus 1, the gold plating is separated from the composite plating processing units 14 to 19 and performed in the single-electrode plating processing units 20 and 21, so that the conservation of the composite plating processing units 14 to 19 can be improved, and for example, After the palladium plating and ore nickel (or cobalt) or palladium plating is performed on the composite plating treatment units 14 to 19, the surfaces of the palladium or nickel (or cobalt) are plated in the single-electroplating units 20, 21, and may be separately treated in accordance with the plating treatment. In particular, the plating treatment apparatus 1 performs plating treatment of an acidic plating treatment liquid containing nickel or palladium or the like by the composite electric ore processing units 14 to 19, and performs alkaline treatment including gold or the like in the single-electrode plating treatment units 20 and 21. Electroplating treatment of the plating treatment liquid, whereby different treatments in the environment can be prevented from being mixed. In the plating processing apparatus 1, as described above, the processing of the substrate 2 can be performed by the control means 3 2 in accordance with various programs recorded on the recording medium 89 provided in the control means 32. Here, the recording medium 8 9 is a program for storing various setting materials or a plating processing program to be described later, such as a memory that can be read by a computer, or a memory such as a ROM or a RAM, or -22-201233851 hard disk, CD- A well-known person such as a disk-shaped media such as a ROM, a DVD-ROM, or a floppy disk. Further, the plating processing apparatus 1 performs plating processing on the substrate 2 as described below in accordance with the plating processing program recorded in the recording medium 89 provided in the control unit 32 (see Fig. 5). In addition, the following description is directed to subjecting the substrate 2 to palladium plating by replacement plating in the composite plating processing unit 14, and then performing nickel plating by chemical reduction plating, and then performing displacement plating in the single-electrode plating processing unit 20. The case where the substrate 2 is plated with gold will be described. First, the plating process is to carry out the substrate loading process. The substrate loading process is performed by the substrate transfer device 22 of the substrate transfer unit 13]. The substrate 2 of the sheet is carried from the substrate transfer chamber 11 to the composite plating processing unit 14. At this time, the plating process is performed in the composite plating processing unit 14, and the substrate acceptance process is performed. In the substrate receiving process, as shown in FIG. 6, the cup 79 is lowered to a predetermined position by the elevating mechanism 87, and is carried into the outer casing 24 from the substrate conveying device 22 while being horizontally held by the wafer chuck 35. The inner substrate 1 is 2, and then the lift mechanism 87 raises the cup 79 to a position where the lowermost discharge port 7 8 faces the outer peripheral edge of the substrate 2. At this time, the plating processing program rotates the support shaft 37' 44 by the rotating mechanisms 38, 45, and the nozzle heads 40, 47 are retracted to the retracted position outside the outer circumference of the turntable 34. Next, the plating process is performed in the composite plating processing unit 14, -23-201233851, and the substrate cleaning process is performed. In the pre-substrate cleaning process, as shown in FIG. 7, the rotating shaft 33 is rotated by the rotating mechanism 36 of the substrate rotation holding means 25, whereby the substrate 2 and the turntable 34 are rotated together, and by the first The rotation mechanism 38 of the washing treatment liquid supply means 27a rotates the support shaft 37 to move the nozzle 55 to the supply position above the center portion of the substrate 2. Then, the flow rate adjustment valve 57 of the first cleaning treatment liquid supply means 27a is adjusted to a predetermined flow rate, and the washing treatment liquid is supplied from the nozzle 55 to the upper surface of the substrate 2. Thereby, the washing treatment of the upper surface of the substrate 2 is performed. The washing treatment liquid after the treatment is recovered in the lowermost discharge port 78 of the cup 79 of the treatment liquid discharge means 31, and is discarded from the waste flow path 86. Then, the supply of the washing treatment liquid of the first washing treatment liquid supply means 27a is stopped. Then, in the pre-substrate cleaning process, as shown in FIG. 8, the support shaft 37 is rotated by the rotation mechanism 38 of the first cleaning treatment liquid supply means 26a, and the nozzle 41 is moved to the center of the substrate 2. The upper supply position. Then, the flow rate adjustment valve 43 of the first cleaning treatment liquid supply means 26a is adjusted to a predetermined flow rate, and the cleaning treatment liquid is supplied from the nozzle 41 to the upper surface of the substrate 2. Thereby, the cleaning process of the upper surface of the board|substrate 2 is performed. The cleaned treatment liquid after the treatment is recovered in the lowermost discharge port 78 of the cup 79 of the treatment liquid discharge means 31, and is discarded from the waste flow path 86. Then, the supply of the cleaning treatment liquid of the first cleaning treatment liquid supply means 26a is stopped. Further, not only the upper surface of the substrate 2 but also the outer peripheral edge portion can be cleaned by the cleaning treatment liquid. Then, in the pre-substrate cleaning process, the upper surface of the substrate 2 is washed in the same manner as the washing process before the cleaning process (see Fig. 7). -24-201233851 Next, in the plating processing unit 14, the replacement plating process is performed in a state where the substrate 2 is not dried shortly after the washing process of the substrate cleaning process. In this manner, the replacement plating process is performed in a state where the substrate 2 is not dried, and it is possible to prevent the substrate of the substrate 2 from being oxidized by the copper or the like on the shovel surface. In this replacement plating process, as shown in FIG. 9, the substrate 2 is rotated by the rotation mechanism 36 of the substrate rotation holding means 25, and the cup 79 is lowered to the middle by the elevating mechanism 87 of the processing liquid discharge means 31. The discharge port 77 is opposed to the outer peripheral edge of the substrate 2, and the support shaft 37 is rotated by the rotation mechanism 38 of the plating treatment liquid supply means 29, and the nozzle 70 is moved above the center portion of the substrate 2. Supply location. Then, the flow rate adjustment valve 72 of the displacement plating treatment liquid supply means 29 is adjusted to a predetermined flow rate, and a replacement plating treatment liquid containing palladium at a normal temperature is supplied from the nozzle 70 toward the upper surface of the substrate 2. Thereby, palladium plating is performed on the upper surface of the substrate 2 by displacement plating. The displacement plating treatment liquid after the treatment is recovered in the discharge port 77 of the middle portion of the cup 79 of the treatment liquid discharge means 31, and when the flow path switch 85 is switched, the washing treatment liquid or the cleaning treatment liquid is mixed with the displacement plating treatment liquid. When it is discarded from the waste flow path 83, and the washing treatment liquid or the washing treatment liquid is not mixed, it is recovered from the recovery flow path 81, and the recovered displacement plating treatment liquid is reused. Then, the supply of the replacement plating solution liquid of the replacement plating solution supply means 29 is stopped. Further, the flow path switching of the flow path switch 85 is to switch the flow path temporally, or to detect the presence or absence of the washing treatment liquid by the sensor. In this replacement plating process, it is also possible to control the nozzle 70 of the replacement plating site -25-201233851 to supply the nozzle 70 to a slower moving speed than the inner peripheral portion of the substrate 2 at the outer peripheral portion of the substrate 2, or to increase The discharge amount of the plating treatment liquid or the temperature of the plating treatment liquid to be discharged is increased, whereby the temperature of the substrate 2 is uniform. Then, in the displacement plating process, the upper surface of the substrate 2 is washed in the same manner as the cleaning process of the pre-substrate cleaning process (see Fig. 7). Next, the plating process is performed in the composite plating processing unit 14 to carry out the intermediate cleaning process of the substrate. In addition, the intermediate cleaning of the substrate can also be omitted. In the intermediate cleaning process of the substrate, the upper surface of the processing substrate is washed by the first cleaning processing liquid supply means 27a, and the lower surface of the processing substrate is cleaned by the third cleaning processing liquid supply means 26a, and then supplied to the third cleaning processing liquid. The means 27c washes the lower surface of the substrate, and then the rotation of the support shaft 37 by the rotation mechanism 38 causes the nozzle head 40 to retreat to the retracted position outside the outer circumference of the turntable 34. Next, the plating process is performed in the composite plating processing unit 14 in the middle of the substrate cleaning process (the replacement plating process in the case where the substrate intermediate cleaning process is omitted), and the chemical reduction plating process is performed. In the composite plating processing unit 14, the replacement plating process and the chemical reduction plating process can be performed in one unit. Therefore, it is not necessary to transport the substrate 2 between the replacement plating process and the chemical reduction plating process, and the drying process of the substrate 2 can be omitted. Therefore, the processing ability can be improved, and the surface of the substrate 2 can be prevented from being oxidized to perform a plating treatment on the surface of the substrate 2 favorably. -26 - 201233851 In this chemical reduction plating process, as shown in FIG. 10, the rotation mechanism 36 of the substrate rotation holding means 25 rotates the turntable 34 at a lower speed at the rotation speed of the plating process, thereby rotating the substrate speed. The elevating mechanism 87 of the treatment liquid discharge means 31 is used to lower the position of the discharge port 76 of the uppermost stage and the outer peripheral edge of the substrate 2, and the support is made by the rotation 45 of the chemical reduction plating treatment liquid supply means 30. The shaft 44 rotates to move the nozzle 73 to a supply position above the center portion of the substrate. Then, the flow rate adjustment valve 75 of the chemical reduction plating treatment means 30 is adjusted to a predetermined flow rate, and a high-temperature (8 (TC - 85t)) electroless plating treatment liquid containing nickel is supplied from the upper surface of the substrate 2 to the substrate 2, thereby Nickel plating is performed on the upper surface of the substrate 2 by chemical reduction. The chemical reduction plating treatment liquid after the treatment is recovered at the uppermost discharge port 76 of the cup 79 of the treatment liquid means 31, and is washed by the flow path switch 84. When the liquid or the cleaning treatment liquid is mixed with the chemical reduction treatment liquid, it is discarded from the waste flow path 82, and when the washing treatment liquid or the treatment liquid is not mixed, it is recovered from the recovery flow path 80, and the chemical reduction plating treatment liquid is recovered. The chemical reduction plating treatment is stopped to supply the chemical reduction plating treatment liquid of the means 30. Further, the flow path switching of the flow converter 84 can temporally switch the flow path, or detect the presence or absence of the washing treatment liquid by feeling. In this chemical reduction plating process, the substrate 2 is rotated at a lower speed than the rotation speed of the substrate 2 in which the plating process is replaced. Thus, a plurality of electro-ammonium treatment liquids are supplied. The electricity supplied from the stage (the replacement plating treatment liquid supply section 29 and the chemical reduction plating treatment liquid supply means 30) is reduced and plated by the liquid supply nozzle 73 of the rotary unit 2 which is set to the lower cup 79, and the liquid supply after switching the plating cleaning is discharged. In the road cutting tool, the rotation speed of the substrate 2 of the substrate rotation holding means 25 is changed according to the type (temperature) of the chemical solution -27-201233851, thereby rotating the substrate 2, and the substrate 2 or the electric shovel can be suppressed. The treatment liquid is cooled by the heat release, and particularly when a high-temperature plating treatment liquid is used, by lowering the rotation speed of the substrate 2, it is possible to suppress the temperature of the plating treatment liquid from being lowered, and to perform uniform plating of the predetermined thickness on the substrate 2 satisfactorily. Further, in the chemical reduction plating treatment process, the chemical reduction plating treatment liquid is discharged from the discharge port 76 different from the discharge port 77 of the cup 79 of the replacement electric ore processing project, and the discharge port is discharged from the different discharge ports according to the type of the plating treatment liquid. 76,77 discharge electroplating treatment liquid to prevent mixing of electroplating treatment liquid. In this chemical reduction electroplating treatment project, it is also possible to control to make chemical reduction electroplating The nozzle 73 of the liquid supply means 30 is slower than the inner peripheral portion of the substrate 2 at the outer peripheral portion of the substrate 2, or the discharge amount of the plating treatment liquid is increased, or the temperature of the discharged plating treatment liquid is increased, thereby making the nozzle 73 of the liquid supply means 30 The temperature of the substrate 2 is uniform. Then, in the chemical reduction plating process, as shown in FIG. 11, the cup 79 is raised to the lowermost discharge port 78 and the substrate 2 by the elevating mechanism 87 of the process liquid discharge means 31. The position at which the outer peripheral edge is opposed is rotated by the rotation mechanism 45 of the second cleaning treatment liquid supply means 27b to move the nozzle 58 to the supply position above the center portion of the substrate 2. Then The flow rate adjustment valve 60 of the second washing treatment liquid supply means 27b is adjusted to a predetermined flow rate, and the washing processing liquid is supplied from the nozzle 58 to the upper surface of the substrate 2. Thereby, the washing treatment of the upper surface of the substrate 2 is performed. The washing treatment liquid after the treatment is collected in the lowermost discharge port 78 of the cup 7 9 of the treatment liquid discharge means 3, and is discarded from the waste flow path 86. Then, -28-201233851 stops the supply of the washing treatment liquid of the second washing treatment liquid supply means 27b. Next, the plating process is performed in the composite plating processing unit 14 to perform a post-substrate cleaning process. In the post-substrate cleaning process, as shown in FIG. 12, the support shaft 44 is rotated by the rotation mechanism 45 of the second cleaning treatment liquid supply means 26b, and the nozzle 48 is moved above the center portion of the substrate 2. Supply location. Then, the flow rate adjustment valve 50 of the second cleaning treatment liquid supply means 26b is adjusted to a predetermined flow rate, and the cleaning treatment liquid is supplied from the nozzle 48 to the upper surface of the substrate 2. Thereby, the cleaning process of the upper surface of the board|substrate 2 is performed. The cleaning treatment liquid after the treatment is recovered in the lowermost discharge port 78 of the cup 79 of the treatment liquid discharge means 31, and is discarded from the waste flow path 86. Then, the supply of the cleaning treatment liquid of the second cleaning treatment liquid supply means 26b is stopped. Further, not only the upper and lower surfaces of the substrate 2 but also the outer peripheral edge portion can be washed by the cleaning treatment liquid. Further, it is also possible to use a different type of cleaning treatment liquid than the pre-substrate cleaning process. Then, the substrate post-cleaning process is to wash the upper surface of the substrate by the first cleaning solution supply means 27a, and to clean the lower surface of the substrate by the third cleaning treatment liquid supply means 26c. The lower surface of the processed substrate is washed by the third cleaning treatment liquid supply means 27c, and then the support shaft 44 is rotated by the rotation mechanism 45 to move the nozzle head 47 to the retracted position outside the outer periphery of the substrate 2. Next, the plating process is performed in the composite plating processing unit 14 to carry out the substrate drying process. In the substrate drying process, as shown in FIG. 13, the support shaft 37 is rotated by the first flow -29-201233851 sprayed in the spray nozzle 87 water transport> the rotary mechanism 38 of the substrate processing means 28a. The mouth 64 is moved to a supply position above the center portion of the substrate 2. Then, the flow rate adjustment valve 66 of the drying process section 28 is adjusted to a predetermined flow rate, and the dry process liquid is supplied from the nozzle 64 to the upper surface of the substrate 2, and the flow rate adjustment valve 69 of the second drying mechanism 28b is adjusted to a predetermined flow rate. The drying treatment agent is supplied from the spray 67 toward the lower surface of the substrate 2. Thereby, the drying process on the upper and lower sides of the substrate 2 is performed. The dried treatment liquid after the treatment is recovered in the discharge port 78 at the lowermost stage of the cup 79 of the treatment liquid discharge means 31, and is discarded from the waste road 86. Then, the drying process of the first and second drying processing means 28a to 8b is stopped, and the support shaft 37 is rotated by the rotating mechanism 38 to move the nozzle head 40 to the retracted position outside the outer periphery of the substrate 2. Secondly, the plating process is to implement the substrate transfer project. In the substrate transfer project, as shown in Fig. 14, the cup 79 is lowered to a predetermined position by the elevating mechanism, and the substrate 2 in a state in which the substrate rotation holding means 25 is held flat is transferred to the substrate transfer device 22. Next, the plating process is to carry out the substrate transfer project. In the substrate transfer process, one substrate 2 is transferred from the composite plating processing unit 14 to the single-electrode plating processing unit 20 by the substrate transfer device 22 of the substrate transfer unit 13. Then, in the single-electrode plating processing unit 20, similarly to the respective processes of the above-described composite plating processing unit 14, the board receiving process, the pre-substrate cleaning process, the replacement plating process, the post-cleaning process, and the post-priming cleaning process are sequentially performed. Substrate drying engineering, substrate transfer project. In the single-electrode plating treatment unit 20, as the replacement plating treatment -30-201233851, the plating treatment liquid containing gold is used, and the substrate 2 is plated with gold by displacement plating. At this time, similarly to the chemical reduction plating process in the composite plating processing unit 14, the substrate 2 is rotated at a lower speed than the rotational speed of the replacement plating process of the composite ore processing unit 14, and is supplied from the replacement plating solution. The source 71 is supplied with a replacement plating solution containing a high temperature of gold (80 ° C to 85 ° C). Further, the single-electrode plating treatment unit 20 is also recovered by replacing the plating treatment liquid mixed with the washing treatment liquid. Finally, the shovel handler is a substrate removal project. In the substrate unloading process, one substrate 2 is carried out from the single-electrode plating processing unit 20 to the substrate transfer chamber 1 by the substrate transfer device 22 of the substrate transfer unit 13. As described above, the plating treatment apparatus 1 is provided with a plurality of plating processes for supplying different types of plating treatment liquids (here, a palladium-containing replacement plating treatment liquid and a nickel-containing chemical reduction plating treatment liquid) to the surface of the substrate 2. Since the processing liquid supply means (herein, the replacement shovel processing liquid supply means 29 and the chemical reduction plating treatment liquid supply means 30), the size of the plating processing apparatus 1 can be reduced. Further, while the substrate 2 is rotated, different plating treatment liquids are sequentially supplied to the surface of the substrate 2, and a plurality of plating treatments are sequentially performed on the surface of the substrate 2, so that the time required for the substrate 2 to be transported or dried can be eliminated. The processing time required for the plating treatment can be shortened, and the processing capability of the plating processing apparatus 1 can be improved. Further, by performing a plurality of plating processes on the surface of the substrate 2 in sequence, it is possible to prevent the surface of the substrate 2 from being oxidized and to perform a plating treatment on the surface of the substrate 2 favorably. -31 - 201233851 The plating treatment apparatus 1 rotates the substrate 2 at a low speed when the plating treatment is performed by a high-temperature plating treatment liquid, thereby preventing the degree of the plating treatment liquid from being lowered, but also by treating the electric ore. The substrate temperature rising means at the temperature of the substrate 2 prevents the temperature of the plating treatment liquid from decreasing. For example, as shown in FIG. 15, the substrate temperature increasing means 90 is a dosing bag having a flexible expansion and contraction in the upper portion of the turntable. The fluid is heated and stored (heating fluid: liquid or The groove 92 of the gas is connected to the circulation flow path 93, and the heating body 91 is connected to the outward side of the circulation flow path 93 via the opening and closing valve 94, and the heating body 91 is connected to the circuit side of the circulation flow path 93 by the suction pump 95. The heater 96 is housed inside the tank. The on-off valve 94, the suction pump 95, and the heater 96 are connected to the control means 32 and controlled by the control means 32. Further, the nozzles 52, 67 are placed in the central portion of the heating body 91, and the discharge of the treatment liquid from the sprays 5 2, 6 1, 6 7 is not hindered. Further, the substrate temperature increasing means 90 heats the heating fluid stored in the tank 92 to a predetermined heating temperature by the heater 96, and opens the opening and closing valve 94 to drive the suction pump 95 to supply the heating fluid to the addition body 91. The supply pressure causes the heating body 91 to expand and is brought into contact with the lower surface (back surface) of the substrate 2, and the base 2 is heated from the lower surface of the substrate 2 to raise the temperature. Further, the substrate temperature increasing means 90 is configured to open the closing valve 94 and drive the suction pump 95 only for a predetermined time, sucking the heating fluid from the heating body 191, and contracting the heating body 91 by the suction pressure thereof so that the lower surface of the substrate 2 is A gap in which the treatment liquid spouted from the nozzles 52, 61, 67 flows is ensured between the turntables 34. The electric temperature rises 34. The hot body is led by the hot plate stopper through the 92-inch 6 1 nozzle. -32-201233851 The substrate temperature rising means 90 supplies the heating fluid inside the bag-shaped heating body 91, thereby heating The fluid does not mix with the various treatment fluids. Further, the substrate temperature increasing means 90 may change the heating temperature of the heating fluid in accordance with the type (temperature) of the plating treatment liquid. Further, the substrate temperature increasing means 90 is a region in which the lower surface of the substrate 2 is divided into a plurality of regions, and different heating bodies are disposed for each region, whereby the lower surface of the substrate 2 is placed in each region (for example, the region on the inner peripheral side of the substrate 2). The temperature of the substrate 2 is raised to the temperature of the substrate 2 on the outer peripheral side to more reliably suppress the temperature drop of the plating treatment liquid supplied to the substrate 2, and the plating temperature can be made uniform, and the plating thickness can be made uniform. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a plating treatment apparatus. Fig. 2 is a side view showing a composite electrochemical ammonium treatment unit. Figure 3 is the same plan view. Fig. 4 is a side view showing a single-shot plating processing unit. Fig. 5 is a construction drawing showing a method of treating a power shovel. Fig. 6 is an explanatory view of the same operation. Fig. 7 is an explanatory view of the same operation. Fig. 8 is an explanatory view of the same operation. Fig. 9 is an explanatory view of the same operation. Fig. 10 is an explanatory view of the same operation. Fig. 11 is an explanatory view of the same operation. Fig. 12 is an explanatory view of the same operation. -33- 201233851 Figure 1 3 is the same action diagram. Fig. 14 is an explanatory view of the same operation. Fig. 15 is a side view showing the rise in temperature of the substrate. [Description of main component symbols] 1 : Plating treatment apparatus 2 : Substrate 3 : Carrier 4 : Substrate loading and unloading station 5 : Substrate loading and unloading chamber 6 : Substrate processing chamber 7 : Front wall 8 : Conveying device 9 : Transfer chamber 1 〇 : Substrate parent Pickup 1 1 : Substrate transfer chamber 12 : Intersection interface 1 3 : Substrate transfer unit 14 to 19 : Composite plating processing unit 20 , 21 : Single-electrode plating processing unit 22 : Substrate transfer device 23 : Substrate transfer inlet 24 : Outer case 25 : substrate rotation holding means - 34 - 201233851 26 : cleaning treatment liquid supply means 27 : washing treatment liquid supply means 28 : drying processing means 29 : replacement plating treatment liquid supply means 3 : chemical reduction plating treatment liquid supply means 3 1 : treatment liquid discharge means 3 2 : control means 33 : rotating shaft 3 4 : turntable 3 5 : wafer chuck 36 : rotating mechanism 37 : support shaft 3 8 : rotating mechanism 39 : arm 40 : nozzle head 41 : nozzle 42 : washing Net processing liquid supply source 43: Flow rate adjustment valve 44: Support shaft 45: Rotating mechanism 46: Arm 47: Nozzle head 48: Nozzle 49: Washing treatment liquid supply source - 35 - 201233851 5 0 : Flow regulating valve 5 1 : Shaft Body 52: Nozzle 5 3 : Washing treatment liquid supply source 54 : Flow rate adjustment valve 5 5 : Nozzle 5 6 : Washing treatment liquid supply source 5 7 : Flow rate adjustment valve 5 8 : Nozzle 5 9 : Washing treatment liquid supply source 6 0 : Flow rate adjustment valve 6 1 : Nozzle 62 : Washing treatment liquid Supply source 6 3 : Flow rate adjustment valve 64 : Nozzle 6 5 : Drying treatment liquid supply source 66 : Flow rate adjustment valve 67 : Nozzle 6 8 : Drying treatment supply source 69 : Flow rate adjustment valve 7 0 : Nozzle 7 1 : Displacement plating treatment Liquid supply source 7 2 : Flow rate adjustment valve 73 : Nozzle - 36 201233851 74 : Chemical reduction plating treatment liquid supply source 75 : Flow rate adjustment valve 76 , 77 , 78 : Discharge port 79 : Cup 8 0, 8 1 : Recovery flow path 8 2, 8 3 : waste flow path 84, 85 : flow path switch 8 6 : waste flow path 8 7 : lifting mechanism 8 8 : outer case 8 9 : recording medium 90 : substrate temperature rising means 9 1 : heating body 92 : Slot 93: circulation flow path 94: opening and closing valve 95: suction pump 9 6 _·heater-37 -

Claims (1)

201233851 七、申請專利範圍： 1. —種電鍍處理裝置，係對基板的表面供給電鍍處 理液而進行電鍍處理的電鍍處理裝置，其特徵係具有： 基板旋轉保持手段，其係用以保持旋轉基板； 複數的電鍍處理液供給手段，其係用以對基板的表面 供給組成不同的複數種類的電鍍處理液： 電鍍處理液排出手段，其係用以按各種類排出從基板 飛散的電鍍處理液；及 控制手段，其係用以控制前述基板旋轉保持手段、前 述複數的電鍍處理液供給手段及前述電鍍處理液排出手段 〇 2. 如申請專利範圍第1項之電鎪處理裝置，其中， 前述控制手段係以前述基板旋轉保持手段來保持旋轉前述 基板的狀態，依序驅動前述複數的電鍍處理液供給手段， 而對基板的表面依序實施複數的電鍍處理。 3. 如申請專利範圍第1項之電鍍處理裝置，其中， 前述複數的電鍍處理液排出手段係使排出口上下層疊而設 成多段，且設置用以使前述基板旋轉保持手段及前述複數 的電鍍處理液排出手段相對性地昇降的昇降手段。 4. 如申請專利範圍第3項之電鍍處理裝置，其中， 前述控制手段係驅動前述昇降手段，按照種類從不同的電 鍍處理液排出手段來排出從前述複數的電鍍處理液供給手 段所供給的電鍍處理液。 5. 如申請專利範圍第1項之電鍍處理裝置，其中， -38- 201233851 更具有： 洗淨處理液供給手段，其係用以對基板的表面供給洗 淨處理液； 洗滌處理液供給手段，其係用以對基板的表面供給洗 滌處理液；及 處理液排出手段，其係用以排出從基板飛散的洗淨處 理液及洗滌處理液。 6. 如申請專利範圍第1項之電鍍處理裝置，其中， 前述複數的電鍍處理液排出手段係分別具有排出流路，且 將各排出流路分歧成電鍍處理液回收流路及電鍍處理液廢 棄流路。 7. 如申請專利範圍第6項之電鍍處理裝置，其中， 前述控制手段係於洗淨處理液或洗滌處理液混入至排出的 電鍍處理液時，以能夠從電鑛處理液廢棄流路廢棄的方式 控制前述電鍍處理液排出手段。 8 ·如申請專利範圍第1項之電鍍處理裝置，其中， 前述複數的電鏟處理液供給手段係具有：供給用以進行置 換電鍍的電鍍處理液之置換電鑛處理液供給手段、及供給 用以進行化學還原電鍍的電鍍處理液之化學還原電鍍處理 液供給手段， 前述控制手段係驅動置換電鍍處理液供給手段之後驅 動化學還原電鑛處理液供給手段。 9. 一種電鍍處理裝置，係對基板的表面供給電鍍處 理液而進行電鍍處理的電鍍處理裝置，其特徵係具有： -39- 201233851 複合電鍍處理單元，其係對基板的表面依序實施複數 種類的電鍍處理； 單發電鍍處理單元’其係用以對基板的表面實施1種 類的電鍍處理；及 基板搬送單元，其係於前述複合電鍍處理單元與單發 電鍍處理單元之間進行基板的搬送， 前述複合電鍍處理單元係具有： 基板旋轉保持手段，其係用以保持旋轉基板； 複數的電鍍處理液供給手段，其係用以對基板的表面 供給組成不同的複數種類的電鍍處理液； 電鍍處理液排出手段，其係用以按各種類排出從基板 飛散的電鑛處理液：及 控制手段，其係用以控制前述基板旋轉保持手段、前 述複數的電鍍處理液供給手段及前述電鏟處理液排出手段 〇 10. 如申請專利範圍第9項之電鍍處理裝置，其中， 前述控制手段係控制成在前述複合電鍍處理單元對基板的 表面依序實施複數種類的電鍍處理之後，用前述基板搬送 單元從前述複合電鍍處理單元往前述單發電鍍處理單元搬 送，在前述單發電鍍處理單元對基板的表面實施1種類的 電鍍處理》 11. 如申請專利範圍第9項之電鍍處理裝置，其中， 將前述複合電鍍處理單元的個數設爲比前述單發電鑛處理 單元的個數更多。 -40- 201233851 12. 如申請專利範圍第1項之電鑛處理裝置，其中， 前述控制手段係按照從前述複數的電鍍處理液供給手段所 供給的電鍍處理液的種類來變更前述基板旋轉保持手段的 旋轉速度。 13. 如申請專利範圍第1項之電鍍處理裝置，其中， 前述控制手段係以供給至基板的表面之電鍍處理液的量爲 周緣部要比基板的中心部更多的方式控制前述電鍍處理液 供給手段。 14. 如申請專利範圍第1項之電鍍處理裝置，其中， 前述控制手段係以供給至基板的表面之處理液的溫度爲周 緣部要比基板的中心部更高的方式控制前述電鍍處理液供 給手段。 1 5 ·如申請專利範圍第1項之電鏟處理裝置，其中， 具有用以使前述基板的溫度上昇的基板溫度上昇手段，基 板溫度上昇手段係構成使以高溫流體來膨脹的袋狀構件接 觸於基板的背面，而令基板的溫度上昇。 1 6.如申請專利範圍第1 5項之電鍍處理裝置，其中 ，前述控制手段係按照從前述複數的電鍍處理液供給手段 所供給的電鍍處理液的種類來變更前述基板溫度上昇手段 的加熱溫度。 1 7. —種電鍍處理方法，其係對基板的表面供給電鍍 處理液而進行電鍍處理的電鍍處理方法，其特徵爲： 從複數的電鍍處理液供給手段依序供給組成不同的複 數種類的電鍍處理液至基板的表面，而對基板的表面依序 -41 - 201233851 實施複數的電鍍處理。 18.如申請專利範圍第17項之電鑛處理方法，其中 ，按照種類從不同的電鍍處理液排出手段來排出從前述複 數的電鍍處理液供給手段所供給的電鍍處理液。 1 9. 一種電鍍處理方法，其係對基板的表面供給電鍍 處理液而進行電鍍處理的電鍍處理方法，其特徵爲： 使用複合電鍍處理單元，從複數的電鍍處理液供給手 段依序供給組成不同的複數種類的電鍍處理液至基板的表 面，而對基板的表面依序實施複數的電鍍處理， 然後，從複合電鍍處理單元搬送基板至單發電鍍處理 單元，使用單發電鍍處理單元，從電鍍處理液供給手段供 給1種類的電鍍處理液至基板的表面，而對基板的表面實 施電鑛處理。 20. 一種記錄媒體，係記錄供以使用電鍍處理裝置來 電鍍處理基板的表面之電鍍處理程式，該電鍍處理裝置係 具有： 基板旋轉保持手段，其係用以保持旋轉基板； 複數的電鍍處理液供給手段，其係用以對基板的表面 供給組成不同的複數種類的電鍍處理液； 複數的電鍍處理液排出手段，其係爲了按各種類排出 從基板飛散的電鍍處理液，而設成多段；及 昇降手段，其係用以使前述基板旋轉保持手段與前述 複數的電鍍處理液排出手段相對性地昇降， 依序驅動前述複數的電鍍處理液供給手段，對基板的 -42- 201233851 表面依序實.施複數的電鍍處理，且驅動前述昇降手段，按 照種類從不同的電鍍處理液排出手段來排出從前述複數的 電鍍處理液供給手段所供給的電鍍處理液。 -43-201233851 VII. Patent application scope: 1. A plating treatment apparatus which is a plating treatment apparatus which supplies a plating treatment liquid to a surface of a substrate and performs plating treatment, and is characterized in that: a substrate rotation holding means for holding a rotating substrate a plurality of plating treatment liquid supply means for supplying a plurality of types of plating treatment liquids having different compositions to the surface of the substrate: a plating treatment liquid discharge means for discharging the plating treatment liquid scattered from the substrate in various types; And the control means for controlling the substrate rotation holding means, the plurality of plating treatment liquid supply means, and the electroplating treatment liquid discharge means. The electric discharge processing apparatus of claim 1, wherein the control In the method of rotating the substrate by the substrate rotation holding means, the plurality of plating treatment liquid supply means are sequentially driven, and a plurality of plating processes are sequentially performed on the surface of the substrate. 3. The plating treatment apparatus according to the first aspect of the invention, wherein the plurality of plating treatment liquid discharge means is formed by stacking the discharge ports in a plurality of stages, and providing the substrate rotation holding means and the plurality of plating The lifting means for relatively elevating and lowering the treatment liquid discharge means. 4. The plating apparatus according to claim 3, wherein the control means drives the lifting means, and discharges the plating supplied from the plurality of plating processing liquid supply means from different plating processing liquid discharging means according to the type Treatment fluid. 5. The plating treatment apparatus according to the first aspect of the invention, wherein -38 to 201233851 further comprises: a cleaning treatment liquid supply means for supplying a cleaning treatment liquid to a surface of the substrate; and a washing treatment liquid supply means, It is used to supply a washing treatment liquid to the surface of the substrate, and a processing liquid discharging means for discharging the cleaning treatment liquid and the washing treatment liquid scattered from the substrate. 6. The plating treatment apparatus according to claim 1, wherein the plurality of plating treatment liquid discharge means each have a discharge flow path, and each of the discharge flow paths is divided into a plating treatment liquid recovery flow path and a plating treatment liquid waste. Flow path. 7. The plating apparatus according to claim 6, wherein the control means is capable of being discarded from the electric ore processing liquid disposal channel when the cleaning treatment liquid or the washing treatment liquid is mixed into the discharged plating treatment liquid. The method of controlling the plating treatment liquid discharge means is controlled. The electroplating treatment apparatus according to the first aspect of the invention, wherein the plurality of electric shovel treatment liquid supply means includes a supply means for supplying a plating treatment liquid for performing displacement plating, and a supply means for supplying The chemical reduction plating treatment liquid supply means for performing the chemical reduction plating electroplating treatment liquid, wherein the control means drives the chemical conversion reduction treatment liquid supply means after driving the replacement plating treatment liquid supply means. 9. A plating treatment apparatus which is a plating treatment apparatus which supplies a plating treatment liquid to a surface of a substrate and performs a plating treatment, and has a feature of: -39-201233851 a composite plating processing unit which sequentially performs a plurality of types on the surface of the substrate Electroplating treatment; single-shot plating processing unit for performing one type of plating treatment on the surface of the substrate; and substrate transfer unit for transferring the substrate between the composite plating processing unit and the single-electrode plating processing unit The composite plating processing unit has: a substrate rotation holding means for holding a rotating substrate; and a plurality of plating processing liquid supply means for supplying a plurality of kinds of plating treatment liquids having different compositions to the surface of the substrate; a treatment liquid discharge means for discharging an electric ore treatment liquid scattered from a substrate in various types and a control means for controlling the substrate rotation holding means, the plurality of plating treatment liquid supply means, and the electric shovel treatment Liquid discharge means 〇10. Plating place as in claim 9 In the apparatus, the control means is controlled to perform a plurality of types of plating treatment on the surface of the substrate in sequence by the composite plating processing unit, and then transport the material from the composite plating processing unit to the single-electrode plating processing unit by the substrate transfer unit. In the above-mentioned single-shot plating processing unit, a plating treatment is performed on the surface of the substrate. 11. The plating processing apparatus according to claim 9, wherein the number of the composite plating processing units is set to be larger than the aforementioned single power generation The number of processing units is more. The electric ore processing apparatus according to the first aspect of the invention, wherein the control means changes the substrate rotation holding means in accordance with the type of the plating treatment liquid supplied from the plurality of plating treatment liquid supply means. The speed of rotation. 13. The plating treatment apparatus according to claim 1, wherein the control means controls the plating treatment liquid such that the amount of the plating treatment liquid supplied to the surface of the substrate is such that the peripheral portion is more than the central portion of the substrate. Supply means. 14. The plating apparatus according to claim 1, wherein the control means controls the plating solution supply such that the temperature of the processing liquid supplied to the surface of the substrate is higher than the central portion of the substrate. means. The shovel processing apparatus according to claim 1, wherein the substrate temperature increasing means is configured to increase the temperature of the substrate, and the substrate temperature increasing means is configured to contact the bag member which is expanded by the high temperature fluid. On the back side of the substrate, the temperature of the substrate rises. 1. The electroplating apparatus according to claim 15, wherein the control means changes the heating temperature of the substrate temperature increasing means in accordance with the type of the plating processing liquid supplied from the plurality of plating processing liquid supply means. . 1. A plating treatment method which is a plating treatment method in which a plating treatment liquid is supplied to a surface of a substrate to perform a plating treatment, and is characterized in that: a plurality of types of plating having different compositions are sequentially supplied from a plurality of plating treatment liquid supply means. The treatment liquid is applied to the surface of the substrate, and a plurality of plating treatments are performed on the surface of the substrate in sequence -41 - 201233851. The method of treating an electric ore according to claim 17, wherein the plating treatment liquid supplied from the plurality of plating treatment liquid supply means is discharged from the different plating treatment liquid discharge means in accordance with the type. 1 . A plating treatment method which is a plating treatment method in which a plating treatment liquid is supplied to a surface of a substrate to perform a plating treatment, and is characterized in that: the composite plating processing unit is used, and the plurality of plating treatment liquid supply means are sequentially supplied in different compositions. a plurality of kinds of plating treatment liquids are applied to the surface of the substrate, and a plurality of plating treatments are sequentially performed on the surface of the substrate, and then the substrate is transferred from the composite plating processing unit to the single-electrode plating processing unit, and the single-electrode plating processing unit is used to perform electroplating. The treatment liquid supply means supplies one type of plating treatment liquid to the surface of the substrate, and performs electric ore treatment on the surface of the substrate. 20. A recording medium recording a plating processing program for plating a surface of a substrate using a plating processing apparatus, the plating processing apparatus having: a substrate rotation holding means for holding a rotating substrate; and a plurality of plating treatment liquids a supply means for supplying a plurality of types of plating treatment liquids having different compositions to the surface of the substrate; and a plurality of plating treatment liquid discharge means for providing a plurality of stages for discharging the plating treatment liquid scattered from the substrate in various types; And a lifting means for relatively elevating and lowering the substrate rotation holding means and the plurality of plating treatment liquid discharge means, sequentially driving the plurality of plating treatment liquid supply means, and sequentially etching the substrate -42 - 201233851 The electroplating treatment is performed by applying a plurality of electroplating treatments, and driving the elevating means to discharge the electroplating treatment liquid supplied from the plurality of plating treatment liquid supply means from different plating treatment liquid discharge means. -43-
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