JP5667550B2 - Plating processing apparatus, plating processing method, and storage medium - Google Patents

Description

  The present invention relates to a plating apparatus, a plating method, and a storage medium that perform plating by supplying a plating solution to the surface of a substrate.

  In general, a substrate such as a semiconductor wafer or a liquid crystal substrate is provided with wiring for forming a circuit on its surface. For this wiring, instead of an aluminum material, a copper material having a low electrical resistance and a high reliability has come to be used. However, since copper is more easily oxidized than aluminum, it is desirable to perform plating with a metal having high electromigration resistance in order to prevent oxidation of the copper wiring surface.

  The plating process is performed, for example, by supplying an electroless plating solution to the surface of the substrate on which the copper wiring is formed. Such an electroless plating process is generally performed by a single wafer processing apparatus (see Patent Document 1).

JP 2009-249679 A

  By the way, it is necessary to control the temperature of the substrate during the plating process. Thus, when performing temperature control of a board | substrate, in addition to supplying the plating solution heated at high temperature with respect to a board | substrate, supplying back surface temperature control water to the back surface of a board | substrate and heating is performed. However, when using the back surface temperature-controlled water, both the plating solution and the back surface temperature-controlled water are mixed in the waste liquid generated during and after the plating process. In general, since the plating solution is expensive, it is desired to separate and reuse the plating solution from the waste solution. However, if both the plating solution and the back surface temperature-adjusted water are mixed in the waste solution, it may be difficult to separate the plating solution from the waste solution and reuse the plating solution.

  The present invention has been made in consideration of such points, and can efficiently heat the substrate, prevent temperature-controlled water from being mixed with the discharged plating solution, and reduce the plating solution. A plating apparatus, a plating method, and a storage medium that can be easily reused are provided.

  A plating apparatus according to an embodiment of the present invention is a plating apparatus that performs plating by supplying a plating solution to a substrate, and a substrate holding mechanism that holds the substrate, and the substrate that is held by the substrate holding mechanism. A discharge mechanism that discharges the plating solution toward the substrate, a plating solution supply mechanism that is connected to the discharge mechanism and supplies the plating solution to the discharge mechanism, and is disposed around the substrate holding mechanism, and is scattered from the substrate. A liquid discharge mechanism for discharging the plating solution, a top plate provided to cover the surface side of the substrate above the substrate held by the substrate holding mechanism, and at least the discharge mechanism and the plating solution And a heating mechanism having a specific heat capacity higher than that of air is trapped between the substrate, the liquid discharge mechanism, and the top plate. The residence space, characterized in that is formed.

  A plating method according to an embodiment of the present invention is a plating method in which plating is performed using the plating apparatus, a holding step of holding the substrate by the substrate holding mechanism, and a substrate holding mechanism. A plating step of discharging the plating solution from the discharge mechanism toward the substrate, and in the plating step, a specific heat capacity from air is retained in the residence space between the substrate, the liquid discharge mechanism, and the top plate. The high heating gas is retained.

  A storage medium according to an embodiment of the present invention is a storage medium storing a computer program for causing the plating apparatus to execute a plating method. The plating method holds the substrate by the substrate holding mechanism. A holding step and a plating step of discharging the plating solution from the discharge mechanism toward the substrate held by the substrate holding mechanism. In the plating step, the substrate, the liquid discharge mechanism, and the top plate The heating gas having a specific heat capacity higher than that of air is retained in the interstitial space.

  According to the present invention, a retention space in which a heating gas having a specific heat capacity higher than air is retained is formed between the substrate and the top plate, so that the substrate can be efficiently removed by the heating gas retained in the retention space. While being able to heat, temperature control water etc. are prevented from mixing with the discharged plating solution, and the plating solution can be easily reused.

FIG. 1 is a plan view showing the overall configuration of a plating system according to an embodiment of the present invention. FIG. 2 is a side view showing a plating apparatus according to an embodiment of the present invention. FIG. 3 is a plan view of the plating apparatus shown in FIG. FIG. 4 is a schematic view showing the flow of a plating solution and a heating gas in the plating apparatus according to one embodiment of the present invention. FIG. 5 is a flowchart showing a plating method according to an embodiment of the present invention. FIG. 6 is a schematic view showing a modification of the plating apparatus. FIG. 7 is a schematic view showing a modification of the plating apparatus. FIG. 8 is a schematic view showing a modification of the plating apparatus. FIG. 9 is a plan view showing a modification of the plating apparatus.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS. First, referring to FIG. 1, the overall configuration of the plating system 90 in the present embodiment will be described.

Plating Processing System As shown in FIG. 1, the plating processing system 90 places a carrier 91 that accommodates a plurality (for example, 25) of substrates W (here, semiconductor wafers), and carries a predetermined number of substrates W. And a substrate loading / unloading chamber 92 for unloading and a substrate processing chamber 93 for performing various processes such as plating and cleaning of the substrate W. The substrate carry-in / out chamber 92 and the substrate processing chamber 93 are provided adjacent to each other.

(Board loading / unloading room)
The substrate carry-in / out chamber 92 includes a carrier placement portion 94, a transfer chamber 96 that stores a transfer device 95, and a substrate transfer chamber 98 that stores a substrate transfer table 97. In the substrate loading / unloading chamber 92, the transfer chamber 96 and the substrate delivery chamber 98 are connected in communication via a delivery port 99. A plurality of carriers 91 that accommodate a plurality of substrates W in a horizontal state are placed on the carrier placing portion 94. In the transfer chamber 96, the substrate W is transferred, and in the substrate transfer chamber 98, the substrate W is transferred to and from the substrate processing chamber 93.

  In such a substrate loading / unloading chamber 92, a predetermined number of substrates W are transported by the transport device 95 between any one carrier 91 placed on the carrier placing portion 94 and the substrate delivery table 97. The

(Substrate processing room)
In addition, the substrate processing chamber 93 is arranged in the front and back (right and left in FIG. 1) in the center, and arranged side by side on one side and the other side of the substrate transport unit 87, and supplies the plating solution to the substrate W. And a plurality of plating processing apparatuses 20 that perform the plating process.

  Of these, the substrate transport unit 87 includes a substrate transport device 88 configured to be movable in the front-rear direction. The substrate transfer unit 87 communicates with the substrate transfer table 97 in the substrate transfer chamber 98 via the substrate transfer port 89.

  In such a substrate processing chamber 93, the substrates W are transported to the respective plating processing apparatuses 20 while being held horizontally one by one by the substrate transport device 88 of the substrate transport unit 87. In each plating apparatus 20, the substrate W is subjected to cleaning processing and plating processing one by one.

  Each plating apparatus 20 differs only in the plating solution used, and the other points have substantially the same configuration. Therefore, in the following description, the configuration of one plating processing apparatus 20 among the plurality of plating processing apparatuses 20 will be described.

Plating apparatus Next, with reference to FIGS. 2 and 3, it will be described plating apparatus 20. FIG. 2 is a side view showing the plating apparatus 20, and FIG. 3 is a plan view showing the plating apparatus 20.

  2 and 3, the plating apparatus 20 holds the substrate W inside the casing 101 and rotates the substrate W, and faces the surface of the substrate W held by the substrate holding mechanism 110. A discharge mechanism 21 that discharges the plating solution and a plating solution supply mechanism 30 that is connected to the discharge mechanism 21 and supplies the plating solution to the discharge mechanism 21 are provided.

  Among these, around the substrate holding mechanism 110, a liquid discharge mechanism 140 that discharges the plating solution scattered from the substrate W is disposed. Further, a top plate 151 is disposed above the substrate W held by the substrate holding mechanism 110 so as to cover the surface side of the substrate W. The substrate holding mechanism 110 is connected to a gas supply mechanism 170 that heats and supplies the heating gas G toward the substrate W held by the substrate holding mechanism 110. Further, a control mechanism 160 that controls the substrate holding mechanism 110, the discharge mechanism 21, the plating solution supply mechanism 30, the solution discharge mechanism 140, the top plate 151, and the gas supply mechanism 170 is provided.

(Substrate holding mechanism)
As shown in FIG. 2, the substrate holding mechanism 110 includes a hollow cylindrical rotating shaft member 111 that extends vertically in the casing 101, a turntable 112 attached to the upper end of the rotating shaft member 111, and a turntable 112. A wafer chuck 113 that supports the substrate W, and a rotation mechanism 162 that is connected to the rotation shaft member 111 and that drives the rotation shaft member 111 to rotate.

  Among these, the rotation mechanism 162 is controlled by the control mechanism 160 and rotates the rotation shaft member 111, whereby the substrate W supported by the wafer chuck 113 is rotated. In this case, the control mechanism 160 can rotate or stop the rotation shaft member 111 and the wafer chuck 113 by controlling the rotation mechanism 162. Further, the control mechanism 160 can control the rotational speed of the rotating shaft member 111 and the wafer chuck 113 to be increased, decreased, or maintained at a constant value.

  Further, a back plate 171 is disposed on the back side of the substrate W and above the turntable 112 with a gap S from the substrate W. The back plate 171 faces the back surface of the substrate W held on the wafer chuck 113 and is disposed between the substrate W held on the wafer chuck 113 and the turntable 112. The back plate 171 is connected and fixed to a shaft 172 that passes through the axis of the rotary shaft member 111. The back plate 171 may incorporate a heater. Further, an elevating mechanism 179 such as an air cylinder is connected to the lower end portion of the shaft 172. That is, the back plate 171 is configured to move up and down between the substrate W held by the wafer chuck 113 and the turntable 112 by the lifting mechanism 179 and the shaft 172.

  A first flow path 174 that communicates with a plurality of openings 173 provided on the surface is formed in the back plate 171, and passes through the first flow path 174 and the shaft center of the shaft 172. A fluid supply path 175 communicates with the fluid supply path 175. The fluid supply path 175 is connected to a back surface processing liquid supply mechanism 145 that supplies a processing liquid to the back surface of the substrate W via a valve 146.

  The back plate 171 includes an opening (supply unit) 176 provided on the surface thereof and a second flow path 177 formed inside the back plate 171. Among these, the second flow path 177 communicates with the opening 176 and also communicates with the gas supply path 178 penetrating the shaft 172 up and down. The gas supply path 178 is connected to a gas supply mechanism 170 described later via a valve 188. That is, the back plate 171 has a function of supplying the heated heating gas G toward the back surface of the substrate W.

  In FIG. 2, the opening 176 of the back plate 171 is provided between the center of the back plate 171 and the periphery of the back plate 171 so that the temperature of the substrate W is uniform in the plane. It is not limited to. The opening 176 of the back plate 171 may be provided at the center of the back plate 171 or may be provided at the periphery of the back plate 171.

(Discharge mechanism)
Next, the discharge mechanism 21 that discharges a plating solution or the like toward the substrate W will be described. The discharge mechanism 21 includes a first discharge nozzle 45 that discharges a chemical reduction type plating solution such as a CoP plating solution toward the substrate W. The chemical reduction type plating solution is supplied from the plating solution supply mechanism 30 to the first discharge nozzle 45. Although only one first discharge nozzle 45 is shown in FIG. 2, in addition to the first discharge nozzle 45, another chemical discharge type plating solution such as a CoP plating solution is discharged toward the substrate W. A discharge nozzle (additional discharge nozzle) may be provided.

  The discharge mechanism 21 may further include a second discharge nozzle 70 including a discharge port 71 and a discharge port 72 as shown in FIG. As shown in FIGS. 2 and 3, the second discharge nozzle 70 is attached to the distal end portion of the arm 74, and the arm 74 can be extended in the vertical direction and supported by the rotation mechanism 165. It is fixed to the shaft 73.

  In the second discharge nozzle 70, the discharge port 71 is connected via a valve 76a to a plating solution supply mechanism 76 that supplies a replacement type plating solution, for example, a Pd plating solution. The discharge port 72 is connected to a cleaning process liquid supply mechanism 77 that supplies a cleaning process liquid via a valve 77a. By providing the second discharge nozzle 70 as described above, not only the plating process using the chemical reduction type plating solution but also the plating process using the replacement type plating solution and the cleaning process are performed in one plating processing apparatus 20. It becomes possible.

  Further, as shown in FIG. 2, a rinsing liquid for supplying a pretreatment liquid for a pretreatment performed prior to the plating process, for example, a rinsing liquid such as pure water, to the discharge port 72 of the second discharge nozzle 70. The supply mechanism 78 may be further connected via a valve 78a. In this case, either the cleaning process liquid or the rinse process liquid is selectively discharged from the second discharge nozzle 70 onto the substrate W by appropriately controlling the opening and closing of the valve 77a and the valve 78a.

  As shown in FIGS. 2 and 3, the first discharge nozzle 45 includes a discharge port 46. The first discharge nozzle 45 is attached to the tip of an arm 49, and the arm 49 is fixed to a support shaft 48 that can be extended in the vertical direction and is rotationally driven by a rotation mechanism 166.

(Plating solution supply mechanism)
Next, the plating solution supply mechanism 30 for supplying a chemical reduction type plating solution such as a CoP plating solution to the first discharge nozzle 45 of the discharge mechanism 21 will be described. FIG. 4 is a schematic diagram showing the flow of the plating solution and the heating gas G in the plating apparatus 20.

  As shown in FIG. 4, the plating solution supply mechanism 30 supplies a plating solution supply tank 31 that stores the plating solution 35, and supplies the plating solution 35 in the plating solution supply tank 31 to the first discharge nozzle 45 of the discharge mechanism 21. Tube 33.

  Further, as shown in FIG. 4, tank heating means 50 for heating the plating solution 35 to the storage temperature is attached to the plating solution supply tank 31. Further, between the tank heating means 50 and the first discharge nozzle 45, the temperature of the plating solution 35 toward the first discharge nozzle 45 of the discharge mechanism 21 is adjusted to a supply pipe 33 by heating to a discharge temperature higher than the storage temperature. A heating means 60 is attached.

Various chemical solutions are supplied to the plating solution supply tank 31 from a plurality of chemical solution supply sources (not shown) in which various components of the plating solution 35 are stored. For example, chemical solutions such as CoSO ₄ metal salts containing Co ions, reducing agents (for example, hypophosphorous acid, etc.), ammonia, and additives are supplied. At this time, the flow rates of various chemical solutions are adjusted so that the components of the plating solution 35 stored in the plating solution supply tank 31 are appropriately adjusted.

  As shown in FIG. 4, the heating means 60 is for heating the plating solution 35 heated to the storage temperature by the tank heating means 50 to the discharge temperature. The heating means 60 is attached to the supply medium 33 and the temperature medium supply means 61 for heating the heat transfer medium 66 such as temperature-controlled water to a discharge temperature or a temperature higher than the discharge temperature. It has a temperature control pipe 65 that controls the temperature by conducting the heat of the heat medium 66 to the plating solution 35 in the supply pipe 33.

(Gas supply mechanism)
As described above, the gas supply mechanism 170 heats the heating gas G having a specific heat capacity higher than that of air and supplies it to the substrate W held by the substrate holding mechanism 110. As shown in FIG. 4, such a gas supply mechanism 170 includes a gas supply tank 181 that stores the heating gas G, and a gas that supplies the heating gas G stored in the gas supply tank 181 to the gas supply path 178. And a supply pipe 182. The gas supply tank 181 is connected to a gas temperature adjustment unit 183 for adjusting the heating temperature of the heating gas G, whereby the heating gas G is heated to a predetermined temperature.

  Such a heating gas G has a specific heat capacity higher than that of air (specific heat capacity 1.0 (J / g · K)). Specifically, for example, water vapor (specific heat capacity 2.1 (J / g) K)) and helium (specific heat capacity 5.2 (J / g · K)). Among these, it is preferable to use water vapor from the viewpoint of cost and the like.

  When water vapor is used as the heating gas G, the heating gas G supplied to the gas supply path 178 is not necessarily limited to that supplied from the gas supply tank 181. As shown in FIG. 4, the gas supply path 178 and the temperature medium supply means 61 of the heating means 60 are connected via a gas supply pipe 185, and water vapor present in the gas phase of the temperature medium supply means 61 is supplied to the gas supply path 178. You may supply to. Further, the gas supply path 178 and the plating solution supply tank 31 of the plating solution supply mechanism 30 are connected via the gas supply pipe 184, and water vapor existing in the gas phase of the plating solution supply tank 31 is heated in the gas supply path 178. The gas G may be supplied. In this case, any one or two of the water vapor from the temperature medium supply means 61, the water vapor from the plating solution supply tank 31, and the water vapor from the gas supply tank 181 may be used. good.

  Further, as shown in FIG. 4, an additional gas supply unit 187 may be provided, and the gas supply path 178 of the gas supply mechanism 170 and the additional gas supply unit 187 may be connected via a gas supply pipe 186. In this case, the additional gas supply unit 187 supplies at least one of the components (for example, ammonia) contained in the plating solution 35 to the heating gas G in the gas supply path 178 and supplies these mixed gases. It may be supplied to the substrate W. Further, a component (for example, ammonia) of the plating solution 35 existing in the vapor phase of the plating solution supply tank 31 is supplied to the heating gas G in the gas supply path 178 via the gas supply pipe 184, and these mixed gases are supplied. It may be supplied to the substrate W. In this case, the component from the additional gas supply unit 187 may be used alone, the component from the plating solution supply tank 31 may be used alone, or the component from the additional gas supply unit 187 and the plating solution may be used. A component from the supply tank 31 may be used in combination. Thus, by supplying the component of the plating solution 35 toward the substrate W, the component is prevented from volatilizing from the plating solution 35 during the plating process, or volatilized from the plating solution 35 during the plating process. The component can be supplemented to the plating solution 35.

(Liquid discharge mechanism)
Next, a liquid discharge mechanism 140 that discharges the plating solution, the cleaning solution, and the like scattered from the substrate W will be described with reference to FIG.

  The liquid discharge mechanism 140 is provided around the substrate holding mechanism 110, and includes a cup 105 having discharge ports 124, 129, and 134, an elevating mechanism 164 that is connected to the cup 105 and drives the cup 105 to move up and down, and a cup. 105, liquid discharge paths 120, 125, and 130 for collecting and discharging the plating solution and the like scattered from the substrate W to the discharge ports 124, 129, and 134, respectively.

  In this case, the processing liquid scattered from the substrate W is discharged through the liquid discharge paths 120, 125, and 130 via the discharge ports 124, 129, and 134 for each type of liquid. For example, the CoP plating solution scattered from the substrate W is discharged from the plating solution discharge passage 120, and the Pd plating solution scattered from the substrate W is discharged from the plating solution discharge passage 125 and scattered from the substrate W and the rinse treatment solution. Is discharged from the processing liquid discharge path 130. The CoP plating solution and the Pd plating solution thus discharged may be collected and then reused.

(Top plate)
As shown in FIG. 2, the top plate 151 is disposed above the substrate W and separated from the substrate W. The planar shape of the top plate 151 is a circle corresponding to the inner edge of the upper surface 105a of the cup 105 (see FIG. 3), but the planar shape of the top plate 151 is not limited to this. The top plate 151 is placed in close contact with the upper surface 105a of the cup 105 of the liquid discharge mechanism 140, and covers substantially the entire surface of the substrate W. Further, the top plate 151 has an opening 152 at a position corresponding to the discharge port 46 of the first discharge nozzle 45 and the discharge port 71 of the second discharge nozzle 70 (in this case, approximately the center of the top plate 151). Thus, the supply of the plating solution from the discharge port 46 and the discharge port 71 is not hindered.

  Further, the top plate 151 is connected to the elevating mechanism 154 and can be moved up and down together with the cup 105 by being controlled by the control mechanism 160. Further, the top plate 151 can be moved up and down independently of the cup 105 by the lifting mechanism 154. Accordingly, when the substrate W is held by the substrate holding mechanism 110, it becomes easy to carry the substrate W into and out of the substrate holding mechanism 110.

  As described above, by providing the top plate 151 that covers substantially the entire region on the surface side of the substrate W above the substrate W, a staying space is formed between the substrate W, the top plate 151, and the cup 105 of the liquid discharge mechanism 140. 156 is formed. In this case, the heating gas G such as water vapor supplied from the opening 176 of the back plate 171 or the heating gas G such as water vapor generated from the plating solution 35 stays in the stay space 156. Thus, the substrate W and the plating solution 35 can be efficiently heated using the heating gas G retained in the retention space 156, and the growth of the plating layer can be promoted.

  As shown in FIG. 2, the top plate 151 is provided with a heater 157 for heating the heating gas G staying in the stay space 156. This heater 157 may consist of a heating wire or LED, for example. In the present embodiment, the heater 157 is embedded in the top plate 151.

  In FIG. 2, the heater 157 is provided in substantially the entire region of the top plate 151 except the opening 152, but is not limited thereto. The heater 157 may be provided only on a part of the top plate 151 so that only a part of the stay space 156 is heated preferentially. Specifically, the heater 157 may be provided only on the radially outer side of the top plate 151. Alternatively, even when the heater 157 is provided in substantially the entire region of the top plate 151, the heater 157 can intensively heat only a part of the stay space 156. Good. For example, the heater 157 may heat the radially outer side of the top plate 151 relatively strongly and heat the radially inner side of the top plate 151 relatively weakly. In this case, the temperature of the heating gas G existing outside the stay space 156 in the radial direction is increased. Thus, after the plating solution is discharged from the first discharge nozzle 45, the temperature of the plating solution is prevented from being lowered while flowing from the center portion to the peripheral portion of the substrate W, and the temperature of the plating solution is reduced to that of the substrate W. It can be made uniform in the plane.

  The plating system 90 including a plurality of the plating apparatuses 20 configured as described above is driven and controlled by the control mechanism 160 according to various programs recorded in the storage medium 161 provided in the control mechanism 160, thereby Various processes are performed. Here, the storage medium 161 stores various programs such as various setting data and a plating processing program described later. As the storage medium 161, known media such as a computer-readable memory such as ROM and RAM, and a disk-shaped storage medium such as a hard disk, CD-ROM, DVD-ROM, and flexible disk can be used.

In the present embodiment, the plating system 90 and the plating apparatus 20 are driven and controlled to perform the plating process on the substrate W according to the plating process program recorded in the storage medium 161. In the following description, first, a method in which the Pd plating process is performed on the substrate W by displacement plating in one plating apparatus 20 and then the Co plating process is performed by chemical reduction plating will be described with reference to FIG.

(Substrate holding process)
First, using the substrate transfer device 88 of the substrate transfer unit 87, a single substrate W is transferred from the substrate delivery chamber 98 to the one plating apparatus 20.

  In the plating apparatus 20, first, the cup 105 is lowered to a predetermined position by the lifting mechanism 164, and the top plate 151 is lifted by the lifting mechanism 154. Next, the loaded substrate W is held by the wafer chuck 113 of the substrate holding mechanism 110 (substrate holding step S300). Thereafter, the cup 105 is raised by the elevating mechanism 164 to a position where the discharge port 134 of the liquid discharge mechanism 140 and the outer peripheral edge of the substrate W face each other. Further, the top plate 151 is lowered by the lifting mechanism 154, and the top plate 151 comes into contact with and closely contacts the upper surface 105 a of the cup 105.

(Washing process)
Next, a cleaning process including a rinse process, a pre-clean process, and a subsequent rinse process is executed (S301). First, the valve 78a of the rinse treatment liquid supply mechanism 78 is opened, whereby the rinse treatment liquid is supplied to the surface of the substrate W through the discharge port 72 of the second discharge nozzle 70.

  Next, a pre-cleaning process is performed. First, the valve 77a of the cleaning processing liquid supply mechanism 77 is opened, whereby the cleaning processing liquid is supplied to the surface of the substrate W through the discharge port 72 of the second discharge nozzle 70. For example, malic acid can be used as the cleaning treatment liquid, and pure water can be used as the rinse treatment liquid. Thereafter, in the same manner as described above, the rinse treatment liquid is supplied to the surface of the substrate W through the discharge port 72 of the second discharge nozzle 70. The rinse treatment liquid and the cleaning treatment liquid after the treatment are discarded through the discharge port 134 of the cup 105 and the treatment liquid discharge path 130. In both the cleaning step S301 and each of the following steps, the substrate W is rotated in the first rotation direction R1 (FIG. 3) by the substrate holding mechanism 110 unless otherwise specified.

(Pd plating process)
Next, a Pd plating process is performed (S302). This Pd plating step S302 is executed as a displacement plating process step while the substrate W after the pre-cleaning step is not dried. In this way, by performing the displacement plating process step in a state where the substrate W is not dried, it is possible to prevent the copper on the surface to be plated of the substrate W from being oxidized and being unable to perform the displacement plating process satisfactorily. it can.

  In the Pd plating process, first, the cup 105 is lowered by the elevating mechanism 164 to a position where the discharge port 129 of the liquid discharge mechanism 140 and the outer peripheral edge of the substrate W face each other. Further, the top plate 151 is lowered integrally with the cup 105 by the lifting mechanism 154. Next, the valve 76 a of the plating solution supply mechanism 76 is opened, whereby the plating solution containing Pd is discharged onto the surface of the substrate W at a desired flow rate through the discharge port 71 of the second discharge nozzle 70. In this way, the surface of the substrate W is subjected to Pd plating. The treated plating solution is discharged from the discharge port 129 of the cup 105. The plating solution discharged from the discharge port 129 is collected and reused or discarded via the solution discharge path 125.

(Rinsing process)
Next, for example, a rinsing process is performed as a pre-process performed prior to the Co plating process (S303). In the rinse treatment step S303, for example, a rinse treatment liquid is supplied to the surface of the substrate W as a pretreatment liquid. Note that after the rinsing process, the substrate W may be cleaned by a chemical process, and then a rinsing process may be performed using the rinse process liquid in order to clean the chemical liquid.

(Co plating process)
Thereafter, a Co plating step is performed in the same plating apparatus 20 as that in which the above-described steps S301 to S303 are performed (S304). This Co plating step S304 is performed as a chemical reduction plating treatment step.

  In the Co plating step S304, first, the control mechanism 160 controls the substrate holding mechanism 110 to rotate the substrate W held by the substrate holding mechanism 110. In this state, the plating solution 35 heated to the discharge temperature by the heating unit 60 is discharged from the discharge port 46 of the first discharge nozzle 45 toward the surface of the substrate W. The plating solution 35 discharged from the discharge port 46 passes through the opening 152 of the top plate 151 and reaches the substrate W.

  A Co plating layer is formed on the Pd plating layer formed on the substrate W by discharging the plating solution 35 toward the substrate W using the first discharge nozzle 45. When the Co plating layer reaches a predetermined thickness, for example, 1 μm, the discharge of the plating solution 35 from the first discharge nozzle 45 is stopped, and the Co plating step S304 is completed. The time required for the Co plating step S304 can be, for example, about 20 minutes to 40 minutes.

  In the Co plating step S304, it is not necessary to always rotate the substrate W at a constant rotation number, and the rotation number may be temporarily increased or decreased, or the rotation may be temporarily stopped.

  Further, in the Co plating step S304, the cup 105 is lowered by the elevating mechanism 164 to a position where the discharge port 124 and the outer peripheral edge of the substrate W face each other. For this reason, the treated plating solution 35 is discharged from the discharge port 124 of the cup 105. The treated plating solution 35 that has been discharged can be recovered and reused via the solution discharge path 120. The top plate 151 is lowered integrally with the cup 105 by the lifting mechanism 154. For this reason, in the Co plating step S304, the top plate 151 and the upper surface 105a of the cup 105 are kept in close contact with each other.

  By the way, in the present embodiment, the control mechanism 160 controls the gas supply mechanism 170 almost simultaneously with the discharge of the plating solution 35 from the discharge port 46 of the first discharge nozzle 45, and the heated heating gas G ( For example, water vapor) is supplied toward the back surface of the substrate W. That is, the gas supply mechanism 170 sequentially transfers the heating gas G stored in the gas supply tank 181 and heated by the gas temperature adjustment unit 183 through the gas supply pipe 182, the gas supply path 178, and the second flow path 177. Then, the ink is supplied from the opening 176 of the back plate 171 toward the back surface of the substrate W. Alternatively, the gas supply mechanism 170 supplies the heating gas G from the plating solution supply tank 31 or the temperature medium supply unit 61 toward the back surface of the substrate W from the opening 176 of the back plate 171.

  The supply of the heating gas G by the gas supply mechanism 170 is continuously performed while the plating solution 35 is being discharged from the first discharge nozzle 45. During this time, the heating gas G stays in the gap S between the substrate W and the back plate 171 and continuously heats the substrate W. Further, the plating solution 35 is also heated by the heating gas G through the substrate W. In the present embodiment, a gas having a specific heat capacity higher than that of air, for example, water vapor, is used as the heating gas G, so that the substrate W can be efficiently heated.

  In the present embodiment, a retention space 156 for retaining the heating gas G is formed between the substrate W, the top plate 151, and the cup 105 of the liquid discharge mechanism 140. Therefore, the heating gas G supplied from the opening 176 of the back plate 171 and the heating gas G (for example, water vapor) generated from the plating solution 35 stay in the staying space 156. Thereby, the substrate W and the plating solution 35 can be efficiently heated using the heating gas G retained in the retention space 156, and the growth of the plating layer can be further promoted.

  Furthermore, in the present embodiment, the heating gas G that stays in the stay space 156 using the heater 157 at the same time as or before the discharge of the plating solution 35 from the discharge port 46 of the first discharge nozzle 45. You may heat supplementarily. Thus, by heating the heating gas G with the heater 157, the substrate W and the plating solution 35 can be more effectively heated using the heating gas G. Further, the temperature of the heater 157 may be appropriately controlled, or only a part of the stay space 156 may be preferentially heated by the heater 157. In this case, the growth of the plating layer is performed in the plane of the substrate W. Can be made uniform.

  Thereafter, when the discharge of the plating solution 35 from the first discharge nozzle 45 is stopped, the supply of the heating gas G by the gas supply mechanism 170 is also stopped. Alternatively, the supply of the heating gas G by the gas supply mechanism 170 may be stopped before or after the discharge of the plating solution 35 from the first discharge nozzle 45 is stopped. Further, heating by the heater 157 may be stopped when the discharge of the plating solution 35 from the first discharge nozzle 45 is stopped or after the discharge of the plating solution 35 is stopped.

  In this way, the heated heating gas G is supplied from the opening 176 of the back plate 171 toward the back surface of the substrate W, and from the heating gas G and the plating solution 35 supplied from the opening 176 of the back plate 171. The generated heating gas G is retained in the retention space 156. Thereby, the temperature of the substrate W can be controlled, and the temperature of the plating solution can be prevented from decreasing. As a result, the plating process can be performed in a state of being kept at a constant temperature (for example, 60 to 90 ° C.), and the growth of the Co plating layer can be made uniform in the plane of the substrate W. In addition, since the heating gas G supplied to the substrate W and the heating gas G generated from the plating solution 35 are made of gas, the heating water is added to the plating solution 35 discharged from the discharge port 124 of the cup 105. And the like, and the discharged plating solution 35 after processing can be easily reused. In particular, in the Co plating step S304, the time required for the plating process may be as long as, for example, 20 minutes to 40 minutes. Therefore, by reusing the plating solution 35, the amount of waste liquid can be reduced more efficiently. .

  As described above, the heating gas G supplied from the opening 176 of the back plate 171 toward the substrate W contains at least one of components contained in the plating solution 35 (for example, ammonia). May be. In this case, it is possible to prevent the component from volatilizing from the plating solution 35 during the plating process, or to supplement the plating solution 35 with the component volatilized from the plating solution 35 during the plating process.

(Washing process)
Next, a cleaning step S305 including a rinsing process, a post-cleaning process, and a subsequent rinsing process is performed on the surface of the substrate W that has been subjected to the Co plating process. Since this cleaning step S305 is substantially the same as the above-described cleaning step S301, detailed description thereof is omitted.

(Drying process)
Thereafter, a drying process for drying the substrate W is executed (S306). For example, when the turntable 112 is rotated, the liquid adhering to the substrate W is blown outward by centrifugal force, thereby drying the substrate W. That is, the turntable 112 may have a function as a drying mechanism that dries the surface of the substrate W.

  In this way, in one plating apparatus 20, the surface of the substrate W is first subjected to Pd plating by displacement plating, and then subjected to Co plating by chemical reduction plating.

  Thereafter, the cup 105 is lowered to a predetermined position by the lifting mechanism 164 and the top plate 151 is lifted by the lifting mechanism 154. Next, the substrate W may be taken out from the substrate holding mechanism 110 and transferred to another plating processing apparatus 20 for Au plating processing. In this case, in another plating apparatus 20, the surface of the substrate W is subjected to Au plating processing by displacement plating. The Au plating treatment method is substantially the same as the above-described method for Pd plating treatment except that the plating solution and the cleaning solution are different, and thus detailed description thereof is omitted.

(Operational effect of the present embodiment)
Thus, according to the present embodiment, as described above, the retention space 156 in which the heating gas G stays is formed between the substrate W, the cup 105, and the top plate 151, and the opening 176 of the back plate 171 is formed. The heating gas G generated from the heating gas G and the heating gas G generated from the plating solution 35 are retained in the retention space 156. Thereby, the temperature of the substrate W can be controlled, and the temperature of the plating solution can be prevented from decreasing. As a result, the plating treatment can be performed in a state where it is maintained at a constant temperature (for example, 60 to 90 ° C.), and the Co plating layer can be stably grown. Further, the growth of the Co plating layer can be made uniform in the plane of the substrate W by appropriately controlling the temperature, supply amount, supply timing, and the like of the heating gas G from the opening 176 of the back plate 171. Further, it is possible to prevent water and the like from being mixed with the plating solution discharged from the liquid discharge mechanism 140, and to easily reuse the plating solution.

Modified Examples Hereinafter, modified examples of the present embodiment will be described.

  In the above embodiment, the heated heating gas G (for example, water vapor) is applied to the back surface of the substrate W substantially simultaneously with the discharge of the plating solution 35 from the discharge port 46 of the first discharge nozzle 45 in the Co plating step S304. The aspect which starts supply toward was demonstrated. However, the present invention is not limited to this, and in the Co plating step S304, the heating gas G (for example, water vapor) is applied to the back surface of the substrate W before the plating solution 35 is discharged from the discharge port 46 of the first discharge nozzle 45. Supply may be started.

  In this case, the additional gas supply unit 187 (FIG. 4) may supply an inert gas (for example, nitrogen) to the heating gas G in the gas supply path 178. Thus, by mixing an inert gas (for example, nitrogen) together with the heating gas G and supplying the mixed gas toward the substrate W, the substrate W before the plating solution 35 is supplied is oxidized by the heating gas G. Can be prevented.

  In the above embodiment, the heating gas G is supplied to the back surface of the substrate W. However, the present invention is not limited to this, and the heating gas G is further supplied from the front surface side of the substrate W. May be. That is, as shown in FIG. 6, a gas nozzle 191 is provided on the surface side of the substrate W and on the side of the first discharge nozzle 45, and the heating gas G is supplied not only to the back surface of the substrate W but also to the surface of the substrate W. You may do it. In this case, the gas nozzle 191 is connected to the gas supply mechanism 170, and the control mechanism 160 controls the gas supply mechanism 170 so that the heating gas G is supplied to the surface of the substrate W via the gas nozzle 191. It has become. With such a configuration, it is possible to prevent the temperature of the plating solution 35 on the surface of the substrate W from being lowered, and the growth of the plating layer can be made uniform in the plane of the substrate W.

  In FIG. 6, an additional opening 153 is formed in the top plate 151 at a position corresponding to the gas nozzle 191 so that the supply of the heating gas G from the gas nozzle 191 is not hindered.

  Alternatively, as shown in FIG. 7, by using the gas nozzle 191, the heating gas G may be supplied only from the front surface side of the substrate W, and the heating gas G may not be supplied to the back surface side of the substrate W. Even in this case, the temperature of the plating solution 35 on the surface of the substrate W can be controlled, and the growth of the plating layer can be made uniform in the plane of the substrate W.

  6 and 7, the components contained in the plating solution 35 are added to the heating gas G supplied from the gas nozzle 191 by using the additional gas supply unit 187 (FIG. 4) as in the above embodiment. (For example, ammonia) and / or an inert gas (for example, nitrogen) may be mixed.

  6 and FIG. 7, in the Co plating step S304, the timing for supplying the heating gas G from the gas nozzle 191 to the surface side of the substrate W is not necessarily the plating solution from the discharge port 46 of the first discharge nozzle 45. It is not always substantially the same as the timing of discharging 35. If it is sufficient to compensate for a decrease in the temperature of the plating solution 35 on the surface of the substrate W, the heating gas G is supplied to the gas nozzle 191 after the plating solution 35 is discharged from the discharge port 46 of the first discharge nozzle 45. May be supplied toward the surface of the substrate W.

  Alternatively, as shown in FIG. 8, it is not necessary to supply the heating gas G using the gas supply mechanism 170. Also in this case, the heating gas G generated from the plating solution 35 stays in the stay space 156 formed between the substrate W, the top plate 151 and the cup 105. Therefore, only the heating gas G from the plating solution 35 can efficiently heat the substrate W and the plating solution 35 and promote the growth of the plating layer.

  As shown in FIG. 9, the arm 49 to which the first discharge nozzle 45 is attached is configured to be able to advance and retreat along the radial direction of the substrate W (the direction indicated by the arrow D in FIG. 9). May be. In other words, in FIG. 9, the first discharge nozzle 45 is movable between a center position close to the center portion of the substrate W and a peripheral position closer to the peripheral side than the central position. For example, in the above-described Co plating step S304, the first discharge nozzle 45 may be advanced and retracted from the center side of the substrate W toward the peripheral side of the substrate W. In this case, the top plate 151 is formed with an elongated slit 155 that continuously extends from the opening 152 to the peripheral side, and when the first discharge nozzle 45 advances and retreats, the supply of the plating solution from the discharge port 46 is hindered. There is no such thing.

  6 to 9, the same parts as those in the embodiment shown in FIGS. 1 to 4 are denoted by the same reference numerals, and detailed description thereof is omitted.

  Further, in each of the above embodiments, the substrate holding mechanism 110 rotates and holds the substrate W. However, the present invention is not limited to this. That is, the substrate holding mechanism 110 may be a spinless type. In this case, the substrate holding mechanism 110 holds the substrate W so as not to rotate, and the plating solution supply mechanism 30 may have a long nozzle (not shown). In this case, the plating solution 35 may be supplied to the substrate W when the long nozzle scans the substrate W.

  Furthermore, in the above embodiment, the CoP plating solution is used as the chemical reduction type plating solution 35 discharged from the first discharge nozzle 45 toward the substrate W. However, the plating solution 35 used is not limited to the CoP plating solution, and various plating solutions 35 can be used. For example, as the chemical reduction type plating solution 35, various plating solutions 35 such as a CoWB plating solution, a CoWP plating solution, a CoB plating solution, or a NiP plating solution may be used.

20 Plating Processing Device 21 Discharge Mechanism 30 Plating Solution Supply Mechanism 90 Plating Processing System 110 Substrate Holding Mechanism 151 Top Plate 160 Control Mechanism 170 Gas Supply Mechanism

Claims (11)

In a plating apparatus that performs plating by supplying a plating solution to a substrate,
A substrate holding mechanism for holding the substrate;
A discharge mechanism that discharges the plating solution toward the substrate held by the substrate holding mechanism;
A plating solution supply mechanism that is connected to the discharge mechanism and supplies the plating solution to the discharge mechanism;
A liquid discharge mechanism that is disposed around the substrate holding mechanism and discharges the plating solution scattered from the substrate;
Above the substrate held by the substrate holding mechanism, a top plate provided to cover the surface side of the substrate;
A control mechanism for controlling at least the discharge mechanism and the plating solution supply mechanism,
Between the substrate, the liquid discharge mechanism and the top plate, a retention space is formed in which a heating gas having a specific heat capacity higher than air is retained ,
The heating gas is plating apparatus according to claim der Rukoto those generated from the plating solution. In a plating apparatus that performs plating by supplying a plating solution to a substrate,
A substrate holding mechanism for holding the substrate;
A discharge mechanism that discharges the plating solution toward the substrate held by the substrate holding mechanism;
A plating solution supply mechanism that is connected to the discharge mechanism and supplies the plating solution to the discharge mechanism;
A liquid discharge mechanism that is disposed around the substrate holding mechanism and discharges the plating solution scattered from the substrate;
Above the substrate held by the substrate holding mechanism, a top plate provided to cover the surface side of the substrate;
A control mechanism for controlling at least the discharge mechanism and the plating solution supply mechanism,
Between the substrate, the liquid discharge mechanism and the top plate, a retention space is formed in which a heating gas having a specific heat capacity higher than air is retained,
The heating gas, characterized and to Rume Kki processing apparatus to become water vapor. Said top plate, plating apparatus according to claim 1 or 2, wherein the heater for heating the heating gas of the residence space is provided. In a plating apparatus that performs plating by supplying a plating solution to a substrate,
A substrate holding mechanism for holding the substrate;
A discharge mechanism that discharges the plating solution toward the substrate held by the substrate holding mechanism;
A plating solution supply mechanism that is connected to the discharge mechanism and supplies the plating solution to the discharge mechanism;
A liquid discharge mechanism that is disposed around the substrate holding mechanism and discharges the plating solution scattered from the substrate;
Above the substrate held by the substrate holding mechanism, a top plate provided to cover the surface side of the substrate;
A control mechanism for controlling at least the discharge mechanism and the plating solution supply mechanism,
Between the substrate, the liquid discharge mechanism and the top plate, a retention space is formed in which a heating gas having a specific heat capacity higher than air is retained,
The top plate is provided with a heater for heating the heating gas in the staying space,
The heater mainly features and be Rume Kki processing apparatus to heat only part of the area of the staying space. Said top plate, said liquid plating apparatus according to any one claim of close contact with the ejection mechanism according to claim 1 to 4, characterized in that it is placed. In a plating apparatus that performs plating by supplying a plating solution to a substrate,
A substrate holding mechanism for holding the substrate;
A discharge mechanism that discharges the plating solution toward the substrate held by the substrate holding mechanism;
A plating solution supply mechanism that is connected to the discharge mechanism and supplies the plating solution to the discharge mechanism;
A liquid discharge mechanism that is disposed around the substrate holding mechanism and discharges the plating solution scattered from the substrate;
Above the substrate held by the substrate holding mechanism, a top plate provided to cover the surface side of the substrate;
A control mechanism for controlling at least the discharge mechanism and the plating solution supply mechanism,
Between the substrate, the liquid discharge mechanism and the top plate, a retention space is formed in which a heating gas having a specific heat capacity higher than air is retained,
The top plate is placed in close contact with the liquid discharge mechanism,
Said top plate, wherein the to Rume Kki processing apparatus that independently relative to said liquid discharge mechanism is movable up and down. Plating of any one of claims 1 to 6, characterized in that it comprises a specific heat capacity higher heating gas than air further gas supply mechanism for supplying toward the substrate held by the substrate holding mechanism Processing equipment. The plating apparatus according to claim 7 , wherein the gas supply mechanism supplies the heating gas from the back side of the substrate. The gas supply mechanism, the plating apparatus according to claim 7 or 8, wherein the supplying the heating gas from the surface side of the substrate. In the plating method which performs a plating process using the plating apparatus as described in any one of Claims 1 thru | or 9 ,
A holding step of holding the substrate by the substrate holding mechanism;
A plating step of discharging the plating solution from the discharge mechanism toward the substrate held by the substrate holding mechanism,
In the plating step, the heating gas having a higher specific heat capacity than air is retained in a retention space between the substrate, the liquid discharge mechanism, and the top plate. A storage medium storing a computer program for causing the plating apparatus according to any one of claims 1 to 9 to execute a plating method.
The plating method is:
A holding step of holding the substrate by the substrate holding mechanism;
A plating step of discharging the plating solution from the discharge mechanism toward the substrate held by the substrate holding mechanism,
A storage medium comprising a method in which, in the plating step, the heating gas having a specific heat capacity higher than air is retained in a retention space between the substrate, the liquid discharge mechanism, and the top plate.

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