TW201233477A - Laser processing method and laser processing device - Google Patents
Laser processing method and laser processing device Download PDFInfo
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- TW201233477A TW201233477A TW100142272A TW100142272A TW201233477A TW 201233477 A TW201233477 A TW 201233477A TW 100142272 A TW100142272 A TW 100142272A TW 100142272 A TW100142272 A TW 100142272A TW 201233477 A TW201233477 A TW 201233477A
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- laser
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
Abstract
Description
201233477 六、發明說明： 【發明所屬之技術領域】 雷射加工裝置，係 工物實施雷射加工 本發明係關於一種雷射加工方法及 關於-種適合對於層積有複數層的被加 的雷射加工方法及雷射加工裝置。 【先前技術】 以往對於層積有複數層的被加工物 工而實施精細的加工。就此種被加工物而言用=力: 屬製或玻”等的基_財各㈣關被加工物。: 外’就加卫方法而言，可舉例如去除形成於料圓上的Si0 保護膜並使錢離，或去_狀a-Si _上的透明膜並2 ，其剥離，或去除形成於㈣、化合⑽及有機系的太陽 能電池上的透明膜並使其剝離。 在對於此種成膜的雷射加工方面，係將自雷射裝置射 出的雷射光使用光纖或各種透鏡等的光學系統引導到加工 頭，自加工頭使雷射光向被加工物照射而實施加工。此情 況，藉由使加工頭與被加工物相對地移動而掃描、或使用 設置於加工頭上的檢流計反射鏡（galvan〇metermirr〇r)等 的掃描器使雷射光在二維面内移動而使其掃描，使雷射光 照射於被加工物的預定位置(參閱專利文獻1、圖4、圖5)。 此外，在以往做為去除透明膜等的成膜的雷射光，使 用被該成膜充分吸收的光吸收係數大的波長的雷射光，但 有如下的缺點。例如，如圖22(a)所示，在去除形成於做為 基板1上面所形成的基底層的a—Si薄膜2上的透明膜3 的情况’若使用 FHC(fourth harmonic generation :第 4 高諧 波、波長= 266nm)雷射，則由於是被透明膜3充分吸收的 3/33 201233477 光吸收係數大的波長，所以供做加工的能量過大，熱影響 也達到透明膜3下層的基底層2，並且雷射紅z的能量強 度分布成為中央強、隨著遠離中央而變弱的所謂高斯分 布’所以如同圖(b)所示，有無法精密地只去除透明膜3的 缺點。更進一步說明，由於雷射光LZ為高斯分布，所以產 生透明膜3係形成錐狀部分3a而被去除掉，基底層3也被 局斯分布的巾央的最強部去除而產生損傷部分2a，甚至產 生基底層2的受到雷射光L z照射的地方為熱所變形之類的 缺點。 再者，如圖23所示，雖然已提案有在透明膜3的上方 配置遮光罩4而將被透明膜吸收的雷射光LZ的高斯分布的 中央部分的區域照射於透明膜3上來進行加工，但產生在 距離高斯分布的中央部分之能量強度低的位置，無法去除 ，^膜3而產生部分3b，或在高斯分布的中央部分的 ^量強度高的位置’和圖22⑻同樣，產生基底層2的受到 雷射光LZ照射的地方為熱所變形之類的缺點。 广班此^ ’在專利文獻2中提出了一種通過形成於成為基 &曰的薄膜EL有機發光層上的透明層而將高斯分布的雷 的fr、射到基底層’藉由基底層的削磨而除基底層 八二部分與其上層的透明層的技術。然而，由於使用高斯 2的雷射光，所以產生基底層產生損傷，朗以雷射光 ^長為_nm以上而無法充分抑制對於加工部周邊 衫響之類的缺點。 卜在石夕系、化合物系及有機系的太陽能電池的P】 二的圖案加工之中分割各單元的P3j面，會因雷射光而 、、‘° σ工部周邊熱影響。例如’如圖25所示，對於在基板 4/33 201233477 透有； 5,5自，極=:=:== 太陽能電池層7而劍副上。卩冤極8及 下部電極6發生^ 3緣的寬度〜的槽9，則產生在 側面的加工部=生==:池層7的槽9的内201233477 VI. Description of the invention: [Technical field of invention] Laser processing apparatus, laser processing of workpieces The present invention relates to a laser processing method and a method suitable for the lamination of a plurality of laminated layers Injection processing method and laser processing device. [Prior Art] Conventionally, fine processing has been carried out for a workpiece to be laminated with a plurality of layers. In the case of such a workpiece, the force is used: the basis of the system or the glass, etc. (4) The workpiece is processed. For the method of the reinforcement, for example, the Si0 protection formed on the circle is removed. The film is allowed to leave the film, or the transparent film on the a-Si_ is removed, and the transparent film formed on the (4), compound (10) and organic solar cells is removed or peeled off. In the laser processing of the film formation, the laser light emitted from the laser device is guided to the processing head by an optical system such as an optical fiber or various lenses, and the laser beam is irradiated onto the workpiece by the processing head to perform processing. By scanning the processing head and the workpiece relative to each other, or scanning the laser light in a two-dimensional plane by using a scanner such as a galvanometer meter mirror provided on the processing head. In the scanning, the laser beam is irradiated to a predetermined position of the workpiece (see Patent Documents 1, 4, and 5). In addition, conventionally, laser light which is formed by removing a transparent film or the like is used. Laser light of a wavelength that absorbs a large absorption coefficient of light, There are the following disadvantages: For example, as shown in Fig. 22 (a), in the case of removing the transparent film 3 formed on the a-Si thin film 2 as the underlying layer formed on the substrate 1, 'if FHC (fourth harmonic) is used Generation: The 4th harmonic, wavelength = 266nm) laser, because it is fully absorbed by the transparent film 3, 3/33 201233477 The wavelength of the light absorption coefficient is large, so the energy for processing is too large, and the heat effect also reaches the transparent film. 3 The base layer 2 of the lower layer, and the energy intensity distribution of the laser red z becomes a so-called Gaussian distribution which is strong in the center and weakens as it goes away from the center. Therefore, as shown in the figure (b), it is impossible to precisely remove only the transparent film 3 Disadvantages. Further, since the laser light LZ has a Gaussian distribution, the transparent film 3 is formed to form the tapered portion 3a and is removed, and the base layer 3 is also removed by the strongest portion of the central portion of the towel to cause damage. 2a, even the place where the base layer 2 is irradiated with the laser light Lz is deformed by heat. Further, as shown in Fig. 23, it has been proposed to arrange the hood 4 above the transparent film 3 Suction by transparent film The region of the central portion of the Gaussian distribution of the laser light LZ is irradiated onto the transparent film 3 for processing, but is generated at a position where the energy intensity of the central portion of the Gaussian distribution is low, and cannot be removed, and the film 3 is generated to generate the portion 3b, or In the same position as in Fig. 22 (8), the central portion of the Gaussian distribution has a disadvantage that the portion of the base layer 2 that is irradiated with the laser light LZ is deformed by heat. This is proposed in Patent Document 2. A fringe of a Gaussian-distributed thunder is applied to a base layer by a transparent layer formed on a thin film EL organic light-emitting layer which becomes a base & 曰, and the base layer is removed by grinding of the base layer. The technology of the transparent layer. However, since the laser light of Gauss 2 is used, damage to the underlying layer occurs, and the laser light length is _nm or more, and the disadvantages such as the ringing of the periphery of the processed portion cannot be sufficiently suppressed. In the P j 的 、 、 化合物 化合物 化合物 石 石 石 石 石 石 石 太阳能 石 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能 太阳能For example, as shown in Fig. 25, it is transparent to the substrate 4/33 201233477; 5,5 from, pole =:=:== solar cell layer 7 and the sword is on the side. When the drain 8 and the lower electrode 6 generate the groove 9 having the width of the edge 3, the processed portion on the side surface = raw ==: the groove 9 of the pool layer 7
點。 使發t效轉低之類的缺 [先前技術文獻] [專利文獻] [專利文獻1] [專利文獻2] [專利文獻3] 【發明内容】 特開2010 — 201473號公報 專利第3479761號登载公報 國際公開W02009/06657〗號公報 [發明欲解決之課題] ^請人已提出-種能量強度分布不是高斯分布，而 疋在&射於被加卫物的雷射光的全部區域利用-定的高頂 帽分布的f射歧行力α的技術(㈣專敎獻3、文 獻1的段落(0040))。 其後由本案發明者不懈地研究可知，在使用高頂帽分 布的雷射光去除透明膜的情況，若如以往使用被透明 分吸收的光吸㈣數大的波長的雷射光，則會產生如下的 缺點即帛’為確實地去除透明膜，而必須將雷射光 的能量增多到至少可被透賴吸收的㈣部分，結果加工 所需的能量過大’而產生無法將熱影響抑制得較低之類的 缺點。第二’如圖24(a)所示，由於透明膜3的膜厚不均勻， 所以即使照射高勸胃分布的雷射光LZ，也會如同圖⑼所 5/33 201233477 不，透明膜；3的膜厚不均勻性照樣顯現於加工結果， 生在透明膜3產生加工殘留部分3e，基底層2 ^ ， 甚至基底層2的受到雷射光LZ照射的地方為^ 麩形之類的缺點。 …、所 本發明縣鑑於此等之點岐成，其目的在於 種對於具備依序層積的表層與下層的被加卫物，可將對 下層的損傷抑制得較低而確實地只去除表層，並可使對於 被加工物的加工品質提高的雷射加工方法及雷射加工奘 置。 4 [解決課題之手段] 、、用以達成前述目的的本發明第〗態樣的雷射加工方 法其特徵在於.對於具備依序層積的表層與下層的被加 工物，從前述表層側向下層側照射下層的光吸收係數比^ 述表層更大的雷射光，而藉由削磨前述下層只去除前述表 層。依此，藉由本發明方法，從表層側照射的雷射光在下 層破吸收，只在下層的表面部分產生削磨，藉由 吹走同部分，表層部分也被一起吹走而去除，不:二也 層大的損傷，可確實地執行只去除表層，加工品質也提高。 此外，本發明第2態樣的雷射加工方法，其特徵在於： 前述表層及下層係各自根據材質而決定與雷射光的波長對 應的光吸收係數值；前述雷射光被設定為下層的光吸收係 數值比前述表層更大的波長。依此，藉由本發明方法，可 利用具備具有適當的光吸收係數的波長的雷射光確實地執 行只去除表層，並且可更確實地不會給予下層大的損傷。 此外，本發明第3態樣的雷射加工方法，其特徵在於： 前述雷射光係以能量強度分布為高頂帽形狀的分布。依 6/33 201233477 此，藉由本發明方法，可使雷射光照射範圍的光強产 而實施加工。 二_ 此外’本發明第4態樣的雷射加工方法，其特徵在於： 前述雷射光係與該雷射光的光軸成直角的方向的剖面形狀 為矩形狀的矩形脈衝雷射光，該矩形脈衝雷射光被連# 射=加工物上，連續的前述矩形脈衝雷射光彼此係= 點=度的_以下的範圍使其互相重複後照射於前述被加 讀亡而進行加卫。依此，#由本發财法，可使與 光=光軸成直角的方向的剖面形狀為矩形狀的矩形脈^ 射先且在照射範圍内具有均勾強度的雷 : 排而實施直線狀的劃割力^了错使重设部分沿著單向並 1發明第5態樣的雷射加工方法，其特徵在於： 二:表層為透明膜’下層為基材或層積於基材 表面側的基底層。依此，藉由本發明方法，可確實地^ 除表層的透料會給予基底層大的損傷。 二、此外，本發明第6態樣的雷射加工方法，其特徵在於. 加工物為太陽能電池模組，前述表層為透明膜狀的 4電極’下層包含基材及層積於陽電 池層。依此，藉由本發明太、土 剛㈣灰iwt 可確實地只去时 "可在太陽能電池模組方面， 包含於基底層的太陽能電池層大的損傷不會給予 前述= 二第/態樣的雷射加工方法，其特徵在於： 刖迹田射先對於前述透明膜 下，並且對於前述Μ心丄㈣數為1GG〔/mm〕以 底層的光吸收絲為〔/mm〕以 上的波長。依此’藉由本發明方法，可彻具備〔具有= 7/33 201233477 的光吸收係數的波長的雷射光來確實地只去除表層的透明 膜，並且可更確實地不會給予基底層大的損傷。 此外，本發明第8態樣的雷射加工方法，其特徵在於： 別述雷射光係對於前述翻朗光吸收係數為丨〔/軸〕以 下’亚且對於前述基底層的光吸收係數為1GG_〔/mm〕 以上的波長。依此，藉由本發明方法，可利用具備具有更 適當的歧收係錢波長的雷射光確實地去除表層的透 明膜，並且可更確實地不會給予基底層大的損傷。 /此外’本發明第1態樣的雷射加工農置，其特徵在於 係具備下述，件的雷射加工裝置：射出f射糾雷射裝 置，引導自錢雷射裝置射出的前述雷射朗光纖；聚集 自前述光^出的前述雷射絲照射於被加瑞上的加^ 頭，及使Μ4加工頭與前述被加工物相對移動的移動機 f且自前述加工獅出的前述雷射光係依據前述第U3 怨樣中任-態樣之雷射加1方法的雷射光。依此，藉由本 發明裝置，可按照前卿1 i 3態樣的雷射加工方法實施 ，對於具備依序層積的表層與下層的被加卫物的加工品質 提面的雷射加工。 ' 此外’本發明第2態樣的雷射加工裝置，其特徵在於： 則速光纖的芯剖面係在前述光纖的全區域或離其出光端〆 ===為矩形狀’ 1前述光纖射出的雷射光與 先軸成直角的方向的剖面雜為矩形狀。依此，藉由本發 剖面的照射區域且高頂帽形狀的光 強度也均勻的雷射光來實施實施雷射加工。 ，述=二;:月：3態樣的雷射加工裝置’其特徵在於: 則速心抽形成為矩形狀的區域的長度被設定為3m以 8/33 201233477 上。依此，藉由本發明裝置 更加均勻。 ，可使雷射光的剖面強度分布 〜f外本發明第4態樣的雷射加I裝置，其特徵在於： 具備將麵雷射光的能量強度分布從高斯分布 =為：頂帽形狀的分布的變換機構。依此，藉由本發明 頂帽形狀的光強度也均勻的雷射光來實施實 她W射加工。 此外，本發明第5態樣的雷射加工裝置，於. ==载射出的前述雷射光係與該雷射光的光軸成直角 二向的，形狀為矩形狀的矩形脈衝雷射光，藉由使前 ::二：物:响述移動機構移動，而使前述脈衝雷射光 二你點見度的聰以下的範圍互相重複後照射於前述 被加工物上而進行加卫。依此，藉由本發明裝置 ==具有均勾強度的雷射光確實地重複而實施連續 ==可藉由使重複部分沿著單向並排而實施 [發明之效果] 藉由使本發日錄置舰本發财㈣作，對於呈備依 =表:與下層的被加工物’可將對於下層的損傷抑 :::::確實地只去除表層’並可使對於被加工物的加 【實施方式】 [實施發明之形態] 以下’就本發明的實施形態進行說明。 <關於雷射加工方法> -開始先就圖丨姻2朗本發明的雷射加工方法的 9/33 201233477 原理 圖1顯示按照本發明方法雷射加工被 在和圖20相同部分附上相同符號。 α工物的狀態， 在本發明方法方面，如圖i所示，形 上依序層積有下層2與表層3的被加在基板1 向下層2側照射下層2的光吸收係數 二從表層3側 =。表層3更大的雷射光LZ’而藉由削磨下 更進-步說明’從表層3側照射的 被吸收，只在下層2的表面部分產射下層2 吹走同部分，表層3部分也被—起吹走二去=爆炸性地 會給，2大的損傷，而可梅執:二除 此處，就破加工物w而言，可舉 制、曰 等的基板1形成各種薄 若=玻璃製 也包含下層2兼作其t 』做加工物。此外’ 的且㈣^板1的被加n後，就加工方法 °可舉例如去除形成於矽晶SJjLa ΥΓ» =使:：或成，…薄膜上的透= 池上，及有機系的太陽能電 雷射It二被高頂帽形狀分布。關於以此 所神〜乂 ’將在本發明的雷射加工裝置中說明。 間被吸收的比例，丄 先的波長與物質所决定的值。 使此物質的膜厚與光吸收係數變化時的雷射光的穿透 10/33 201233477 率如表1的陣列。 [表1] 膜厚、α及雷財光的穿遘率 a { idid-1 ) 膜屢i， 0.001 ) 0Ό11 0.1 l 10 0.001 ///Λ 7777Γ ////{ 靡 0.01 ///A //7a /Am» 0.1 ///Λ 75598M 7$s599§ / /0划味 ^ 1 /0拍的舛 /的細 / AM昶 々伽 10 /Λ^ //am 0.904837 —100 /Λ寒 //0498 XOraSQDffl 0,904837 0.36787& 1000 / /m& /αδ咖 0.904837 0.367879 10000 ./Mms 0.367879 100000 0.904637 1 0,3β7δ79Ν.&4^0& "3.^44 \\ 1000000 0.367879 «351^3 \\\"0 t0000000 WX^ft \V\N) \V\"〇 在表1中，由於陣列的右上傾斜的斜線部的穿透率為工 或1以下的接近1的值，所以雷射光穿透物質，而由於陣 列的右下傾斜的斜線部的穿透率為4.5Ε —05，所以雷射光 被物質吸收。 根據此表1，做為雷射光LZ的波長，最好將與取決於 表層3及下層2的各材質的雷射光的波長對應的光吸收係 數值設定為下層2的光吸收係數比表層3更大的波長。 具體而言，例如在對於通常的膜厚為〇1〜1〇#m程度 的透明膜3實施雷射加确情況，最好使用對於透明膜又3 的光吸收係數為100〔/mm〕以下，並且對於基底層2的光 吸收係數為1_〔/mm〕以上(最好對於透_ 3的光吸收 係數為1〔/mm〕以下，並且對於基底層2的光吸收係數為 1〇〇_〔論〕以上)的波長的雷射SLZ。藉此，在-方的 膜厚為0.1〜10_程度的透明膜3方面，由於沒有吸收雷 射光，所以不產生發熱。在另—方的基底層2方面，由於 Π/33 201233477 在離表面0·1〜10//m的深度的表面部分，雷射光Lz幾乎 被吸收’所以只有該表面部分受到損傷，可使削磨確實產 生。 根據表1，例如若對於前述各種透明膜選擇波長，則 SHG(second harmonic generation:第 2 高諧波、波長= 53^^ 雷射或 THG(third harmonic generation :第 3 高諧波、波長 = 355nm)雷射適合。 圖2為顯示藉由本發明方法使具有適當波長的雷射光 照射於透明膜時的光強度(I)的膜厚方向(χ)的變化的圖。 如圖2所示，藉由本發明方法，從加工頭射出的雷射 光LZ，第一，在空氣中以光強度jx行進，進入透明膜3 之際被反射的部分減少而以光強度1〇進入，第二，其後在 透明膜3的膜厚tl内因透明膜3的光吸收係數小而二面維 持光強度Ιο或減小若干一面行進，第三，在基底層2的膜 厚t2内因基底層2的光吸收係數大而以基底層2的表面為 X = 〇，按照光強度1(1 = lQxEep( — α χ))—面以指數函數急劇 減少一面行進。 # ’猎由本發明方法’從表層3側照射的雷射 在下層2被吸收，只在下層2的表面部分產 =由爆炸性地吹相部分2,表層3部分也被—起吹走 ^不加會=^4細縣，^確實喊柄去除表 <關於雷射加工袭置> 其次，就圖3到圖19說明本發明的雷射加工裝置。 本發明的雷射加工裝置细彡成為在照射於被加工物W 的讀光的全部區域中能量強度分布為—定的高頂帽分: 201233477 的雷射m層的紐㈣數比表層更大的雷射光進行 加工。以雷射光為高頂帽分布的結構為依據前述專利文獻3 及專利文獻1的段落(0040)所記載的結構者。 <第1實施形態> 首先’對於依據前述專利文獻3的結構，就圖3到圖 19進行說明。 圖3為顯示本發明一實施形態的雷射加工裝置11的概 念圖。本實施形態的雷射加u u為藉由激發閃光燈而 使雷射光LZ產生’_㈣光Lz照射於被加讀w的所 希望的照射處LP的裝置。此外，如圖3戶斤示，此雷射加工 裝置11具備射出雷射SLZ白勺雷射裝置12、引導從雷射裝 置12射出的雷射光Lz的光纖13、聚集從光纖13射出的 田射光LZ而照射於被加工物w的加工頭14、及使加工頭 14與被加工物W相對移動的移動機構15。 本實施形態的雷射裝置12具有YAG(Yttrium Aluminum Garnet :釔鋁石榴石）棒16、氙氣燈等的閃光燈 17、電源裝置18、控制部、全反射鏡2〇及輸出鏡21。 YAG棒16為光學特性佳的雷射介質之一，形成為圓柱形 狀。閃光燈17配置於YAG棒16的側方。即，本實施形態 的雷射裝置12為藉由從配置於丫八〇棒16側方的閃光燈17 對YAG棒16直接照射激發用的光，而使YAG棒16的原 子光激發的側泵激方式的YAG雷射光[乙產生器。 電源裝置18連接於閃光燈17及控制部19之間，利用 控制部19供應閃光燈17的電力。控制部19形成為經由電 源裝置18而控制雷射裝置12的輸出及雷射光LZ的特性。 本實施形態的雷射裝置12為YAG雷射光1^產生器。本實 13/33 201233477 施形態的雷射加工裝置11的控制部19設定為使yag雷射 的振盪波長又為基本波長l〇64nm的SHG雷射、THG雷 射、FHG雷射的高諧波振盪。此外，本實施形態的雷射加 工裝置11的控制部19設定為藉由經由電源裝置18而控制 閃光燈17的脈衝點亮，使脈衝yag雷射產生。 全反射鏡20係從YAG棒16的一端面（圖3中為yag 棒16的左端面）隔開預定的間隔而配設。此全反射鏡2〇係 使從YAG棒16的一端面輸出的雷射光LZ全反射於YAG 棒16的一端側。 輸出在兄21係從YAG棒16的另一端面（圖3中為YAG. 棒16的右端面）隔開預定的間隔而配設。此輸出鏡21具有 只使固態雷射光LZ穿透的半穿透性。 射入光學單元22係藉由集中從雷射裝置12的輸出鏡 21輸出的雷射光LZ，而使該雷射光LZ射入到光纖13的 入光端13a。在本實施形態的射入光學單元22方面，主要 使用聚光透鏡23。此聚光透鏡23的焦點距離fl設定為 40mm。 如圖3及圖4所示，光纖13為利用配設於其内部的芯 24傳送雷射光LZ的光波導路(optical waveguide path)，配 設於射入光學單元22與兼作射出光學單元的加工頭14之 間。由於雷射光LZ從射入光學單元22側射入，所以對於 本實施形態的光纖13，射入光學單元2 2側的端面成為光纖 13的入光端13a，而加工頭14側的端面成為光纖13的出 光端13b。 如圖4所示’在光纖13的出光端13b中芯24的刹面 形成為矩形狀。關於矩形剖面狀的芯24，亦可以形成於光 14/33 201233477 2 13的全區域。如圖4所示，本實施形態的光_ 的剖面在離其出光端13b 一定距離 = =在其剩餘區域的芯24的剖面中形成為二成= 刚边的4距離FL(在全區域具有矩形剖面姑24的=纖 13的情況為其全長），從雷射光LZ的剖面強度分布、射出 NA(Numerical~erture:數值孔徑)及雷射光lz的操作容 性的觀點，3m〜3Gm程度較好，5m〜1Qm程度更好。 關於光纖13的芯24的尺寸，如圖5所示，矩形剖面 的一邊l為雷射光L z的波長λ的i 5 0倍以上(本實施ς態 中L = 〇.52mm = 489A)，圓形剖面的直徑R為。為了 防止雷射光LZ的傳送損失，入光端13a側的圓形剖面的直 徑R不超過出光端13b側的矩形剖面的一邊L之值，但為 近似其之值較好。 加工頭14係將從光纖13的出光端13b射出的雷射光 LZ照射於被加工物W的照射處LP，主要使用校準透鏡 25、彎曲反射鏡26及出光透鏡27而形成。校準透鏡25的 焦點距離f2設定為l〇〇mm ’出光透鏡27的焦點距離f3設 定為50mm。此等焦點距離f2、β按照被加工物W的特性 及照射條件適當變更較好，要進行細微的加工等，最好將 從前述出光端13b射出的雷射光LZ的矩形的一邊在前述照 射處LP利用加工頭14光學地縮小成一邊從1/2設定為 1/5。具體而言，將β/β從1/2設定為1/5。 其次，說明使用本實施形態的雷射加工裝置11之本發 明的雷射加工方法。 被加工物W的照射處LP係藉由經過圖3所示的雷射 加工裝置11的4個步驟而實施雷射加工。 15/33 201233477 在第1步驟，如圖3所示，從雷 單疋22輪出所希望的脈衝 ^心二、’予 且靜肉六二- 田沿尤1^。就弟1步驟的 —開始藉由為控制部】9所控制的電源裳置 ”冗閃光燈]7，而激發伙〇棒％的原子。杏 燈17 ’將#射光lz的_寬賴整為所希 =值。雖然雷射光LZ&YAC^l6的一端面及另point. [Prior Art Document] [Patent Document] [Patent Document 1] [Patent Document 2] [Patent Document 3] [Summary of the Invention] JP-A-2010-201473, Patent No. 3347761 Bulletin International Publication W02009/06657 〗 〖Publication [The subject to be solved by the invention] ^People have proposed that the energy intensity distribution is not a Gaussian distribution, and the 疋 is used in all areas of the laser light that is incident on the reinforced object. The technique of the high-top hat distribution of the f-distribution force α ((4) special offer 3, paragraph 1 of document 1 (0040)). As a result of intensive research by the inventors of the present invention, in the case where the transparent film is removed by using the laser light having a high-top hat distribution, if the laser light having a large number of wavelengths absorbed by the transparent absorption is used as in the related art, the following The shortcoming is that 为' is to remove the transparent film reliably, and the energy of the laser light must be increased to at least part (4) that can be absorbed by the permeable, and the energy required for processing is too large, and the heat effect cannot be suppressed to a low level. The disadvantages of the class. The second 'as shown in Fig. 24(a), since the film thickness of the transparent film 3 is not uniform, even if the laser light LZ having a high peristaltic distribution is irradiated, it will be as shown in Fig. 9 (9), and the transparent film; The film thickness unevenness is still present in the processing result, and the transparent film 3 is produced to produce the processed residual portion 3e, the underlying layer 2^, and even the place where the base layer 2 is irradiated with the laser light LZ is a disadvantage such as a bran shape. In view of the above, the present invention aims to plant a surface layer and a lower layer of the object to be reinforced, thereby suppressing damage to the lower layer and reliably removing only the surface layer. Moreover, the laser processing method and the laser processing method for improving the processing quality of the workpiece can be provided. [Means for Solving the Problem] The laser processing method according to the first aspect of the present invention for achieving the above object is characterized in that the surface layer having the layer layer and the lower layer having the sequential layer are laterally oriented from the surface layer The light absorption coefficient of the lower layer irradiated to the lower layer is larger than that of the surface layer, and only the surface layer is removed by grinding the lower layer. According to the method of the present invention, the laser light irradiated from the surface layer is broken and absorbed in the lower layer, and only the surface portion of the lower layer is subjected to sharpening. By blowing away the same portion, the surface layer portion is also blown away and removed, not: Also, the damage of the large layer can be surely performed only by removing the surface layer, and the processing quality is also improved. Further, in the laser processing method according to a second aspect of the present invention, the surface layer and the lower layer each determine a light absorption coefficient value corresponding to a wavelength of the laser light according to a material; and the laser light is set to a light absorption of the lower layer. The coefficient value is larger than the aforementioned surface layer. According to this, by the method of the present invention, it is possible to perform the removal of only the surface layer by using the laser light having the wavelength having an appropriate light absorption coefficient, and it is possible to more reliably not give the large damage to the lower layer. Further, a laser processing method according to a third aspect of the present invention is characterized in that the laser light has a distribution of an energy intensity distribution in a top hat shape. According to 6/33 201233477, by the method of the present invention, the light intensity of the laser light irradiation range can be produced and processed. Further, in the laser processing method according to the fourth aspect of the present invention, the cross-sectional shape of the laser beam in a direction perpendicular to the optical axis of the laser beam is a rectangular rectangular laser light having a rectangular shape. The laser light is connected to the processed object, and the continuous rectangular pulsed laser light is overlapped with each other in a range of _ or less of the degree = degree, and then irradiated to the above-mentioned added reading to be defended. Accordingly, according to the present invention, it is possible to make a rectangular pulse having a rectangular cross-sectional shape in a direction perpendicular to the optical axis of the optical axis and having a uniform hook intensity in the irradiation range: linearly arranged The laser processing method is characterized in that: the surface layer is a transparent film 'the lower layer is a substrate or is laminated on the surface side of the substrate. The base layer. Accordingly, by the method of the present invention, it is possible to surely remove the permeability of the surface layer to give a large damage to the substrate layer. Further, a laser processing method according to a sixth aspect of the present invention is characterized in that the processed object is a solar battery module, and the surface layer is a transparent film-shaped four-electrode. The lower layer comprises a base material and is laminated on the solar battery layer. According to the present invention, the present invention can only be used when the solar cell module is covered, and the large damage of the solar cell layer contained in the basal layer is not given to the above-mentioned = second/state. The laser processing method is characterized in that: the smear field is first under the transparent film, and the number of the Μ 丄 (4) is 1 GG [/mm] and the light absorbing wire of the bottom layer is at a wavelength of [/mm] or more. According to the method of the present invention, laser light having a wavelength of light absorption coefficient of = 7/33 201233477 can be provided to surely remove only the transparent film of the surface layer, and the base layer can be more reliably prevented from being damaged. . Further, a laser processing method according to an eighth aspect of the present invention is characterized in that the laser light absorption coefficient is 丨[/axis] or less and the light absorption coefficient for the base layer is 1 GG_. [/mm] Above the wavelength. Accordingly, by the method of the present invention, it is possible to reliably remove the transparent film of the surface layer by using laser light having a wavelength of a more appropriate offset, and it is possible to more reliably not give a large damage to the underlying layer. Further, the laser processing apparatus according to the first aspect of the present invention is characterized in that the laser processing apparatus includes a laser beam scanning device that emits the laser beam, and guides the laser beam emitted from the money laser device. a fiber that is irradiated from the aforementioned light, which is irradiated onto the garnish, and a moving machine that moves the Μ4 processing head relative to the workpiece, and the aforementioned ray is processed from the lion The illuminating light is based on the laser light of the method of the above-mentioned U3 grievance. According to this, the apparatus of the present invention can be implemented in accordance with the laser processing method of the preliminarily 1 i 3 aspect, and the laser processing is performed on the surface quality of the surface layer and the lower layer of the object to be reinforced. Further, a laser processing apparatus according to a second aspect of the present invention is characterized in that: the core profile of the speed fiber is in the entire region of the optical fiber or from the light exit end thereof 〆 === is rectangular" 1 the optical fiber is emitted The cross section of the laser light in a direction at right angles to the preceding axis is rectangular. Accordingly, laser processing is performed by laser light having an illumination region of the present cross section and a high top hat shape with uniform light intensity. , ==2;: Month: 3 state-like laser processing apparatus' is characterized in that the length of the region in which the center of the heart is drawn into a rectangular shape is set to 3 m to 8/33 201233477. Accordingly, the device of the present invention is more uniform. A laser-increasing I device according to a fourth aspect of the present invention, characterized in that: the energy intensity distribution of the surface laser light is set from a Gaussian distribution to a distribution of a top hat shape. Transform the mechanism. Accordingly, the laser processing of the top hat shape of the present invention is also performed by laser light having uniform light intensity. Further, in the laser processing apparatus according to a fifth aspect of the present invention, the laser light emitted by the image is a rectangular pulsed laser light having a rectangular shape in a direction perpendicular to the optical axis of the laser light. Make the front:: 2: Object: The movement of the moving mechanism is made, and the range of the above-mentioned pulsed laser light, which is below your point of view, is repeated and irradiated onto the workpiece to be reinforced. Accordingly, by the device of the present invention == the laser light having the uniform hook intensity is reliably repeated and the continuous == can be performed by arranging the repeated portions along the one-way side by side [effect of the invention] by recording the present day The ship is rich (four), for the preparation of the table = the following objects: the lower layer of the workpiece can be used for the damage to the lower layer::::: really only remove the surface layer 'and can be added to the workpiece [Mode for Carrying Out the Invention] Hereinafter, an embodiment of the present invention will be described. <About laser processing method> - 9/33 201233477 of the laser processing method of the invention is shown in the beginning. FIG. 1 shows that the laser processing according to the method of the present invention is attached to the same portion as FIG. The same symbol. The state of the α-work, in the method of the present invention, as shown in Fig. i, the light absorption coefficient of the lower layer 2 and the surface layer 3 which are layered on the lower layer 2 side of the substrate 1 are sequentially laminated. Surface 3 side =. The surface layer 3 has a larger laser light LZ' and is further absorbed by the grinding step. 'The absorption from the surface of the surface layer 3 is absorbed, and only the surface layer of the lower layer 2 is produced by the lower layer 2, and the same portion is blown away, and the surface layer 3 is also It is blown away by two. = Explosively, it will give 2 big damages, but Kemei will hold it: In addition to this, in the case of the broken workpiece w, the substrate 1 which can be made, enamel, etc. is formed into various thinties. The glass system also includes the lower layer 2 as its workpiece. In addition, after the addition of n, the processing method can be, for example, removed from the twin crystal SJjLa ΥΓ» = make:: or into, ... the film on the transparent = pool, and organic solar power The laser It II is distributed in the shape of a high top hat. Regarding this, the god ~ 乂 ' will be described in the laser processing apparatus of the present invention. The ratio of absorption between the first wavelength and the value determined by the substance. The penetration of laser light when the film thickness and the light absorption coefficient of this material were changed 10/33 201233477 The rate is as shown in the array of Table 1. [Table 1] Film thickness, α and Rayong light penetration rate a { idid-1 ) Membrane repeatedly i, 0.001) 0Ό11 0.1 l 10 0.001 ///Λ 7777Γ ////{ 靡0.01 ///A / /7a /Am» 0.1 ///Λ 75598M 7$s599§ / /0 划^^ 1 /0 shot 舛 / fine / AM 昶々 10 10 / Λ ^ / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / / 0498 XOraSQDffl 0,904837 0.36787& 1000 / /m& /αδ咖0.904837 0.367879 10000 ./Mms 0.367879 100000 0.904637 1 0,3β7δ79Ν.&4^0&"3.^44 \\ 1000000 0.367879 «351^3 \\\"0 t0000000 WX^ft \V\N) \V\"〇 In Table 1, the penetration rate of the oblique line at the upper right of the array is close to 1 for the work or 1 or less, so The laser light penetrates the substance, and since the transmittance of the oblique line portion of the lower right side of the array is 4.5 Ε - 05, the laser light is absorbed by the substance. According to this Table 1, as the wavelength of the laser light LZ, it is preferable to set the light absorption coefficient value corresponding to the wavelength of the laser light depending on the materials of the surface layer 3 and the lower layer 2 so that the light absorption coefficient of the lower layer 2 is more than that of the surface layer 3. Large wavelength. Specifically, for example, in the case where the transparent film 3 having a normal film thickness of 〇1 to 1 〇#m is subjected to laser addition, it is preferable to use a light absorption coefficient of 100 [/mm] or less for the transparent film. And the light absorption coefficient for the base layer 2 is 1_[/mm] or more (preferably, the light absorption coefficient of the transparent layer 3 is 1 [/mm] or less, and the light absorption coefficient for the base layer 2 is 1〇〇_ [on the above] the wavelength of the laser SLZ. As a result, in the case of the transparent film 3 having a film thickness of about 0.1 to 10 Å, since no laser light is absorbed, no heat is generated. In the case of the other base layer 2, since the Π/33 201233477 is at a surface portion of a depth of 0·1 to 10//m from the surface, the laser light Lz is almost absorbed' so that only the surface portion is damaged, and the surface can be cut. The grinding does occur. According to Table 1, for example, if the wavelength is selected for each of the above transparent films, SHG (second harmonic generation: wavelength = 53^^ laser or THG (third harmonic generation, wavelength = 355 nm) Fig. 2 is a view showing a change in film thickness direction (χ) of light intensity (I) when laser light having an appropriate wavelength is irradiated onto a transparent film by the method of the present invention. According to the method of the present invention, the laser light LZ emitted from the processing head first travels in the air at a light intensity jx, and the portion that is reflected when entering the transparent film 3 is reduced to enter at a light intensity of 1 ,, and second, thereafter In the film thickness t1 of the transparent film 3, the light absorption coefficient of the transparent film 3 is small, the light intensity is maintained on both sides, or the surface is reduced by a few sides. Third, the light absorption coefficient of the base layer 2 is large in the film thickness t2 of the base layer 2. On the other hand, the surface of the basal layer 2 is X = 〇, and according to the light intensity 1 (1 = lQxEep (-α χ)), the surface is sharply reduced by an exponential function. # 'Hunting by the method of the present invention' The shot is absorbed in the lower layer 2, only on the surface of the lower layer 2 Production = part 2 of the explosive blowing phase, part of the surface layer 3 is also blown away ^ does not add will = ^ 4 fine county, ^ really shout handle removal table <about laser processing attack> Second, on the map 3 The laser processing apparatus according to the present invention will be described with reference to Fig. 19. The laser processing apparatus of the present invention is a high-top hat which has a uniform energy intensity distribution in all areas of the reading light irradiated to the workpiece W: 201233477 The number of the neon (four) of the laser m layer is larger than that of the surface layer, and the structure in which the laser beam is distributed as the top hat is based on the structure described in the above paragraphs (0040) of Patent Document 3 and Patent Document 1. [First Embodiment] First, the configuration of the above-described Patent Document 3 will be described with reference to Fig. 3 to Fig. 19. Fig. 3 is a conceptual view showing a laser processing apparatus 11 according to an embodiment of the present invention. The laser plus uu is a device for causing the laser light LZ to emit a '_(four) light Lz to the desired irradiation spot LP by being excited by the excitation of the flash lamp. Further, as shown in Fig. 3, the laser processing apparatus 11 With a laser device that shoots the laser SLZ 12, guided from the laser The optical fiber 13 of the laser light Lz emitted from the laser beam 13 and the processing head 14 that is irradiated onto the workpiece w from the field light LZ emitted from the optical fiber 13 and the moving mechanism 15 that relatively moves the processing head 14 and the workpiece W. The laser device 12 has a YAG (Yttrium Aluminum Garnet) rod 16, a flash lamp 17 such as a xenon lamp, a power supply device 18, a control unit, a total reflection mirror 2, and an output mirror 21. The YAG rod 16 is optical. One of the excellent laser media is formed into a cylindrical shape. The flasher 17 is disposed on the side of the YAG rod 16. In other words, in the laser device 12 of the present embodiment, the YAG rod 16 is directly irradiated with light for excitation from the flash lamp 17 disposed on the side of the 丫8 〇 bar 16, and the side light of the YAG rod 16 is excited by the side light. Way of YAG laser light [B generator. The power supply unit 18 is connected between the flash unit 17 and the control unit 19, and the power of the flash unit 17 is supplied by the control unit 19. The control unit 19 is formed to control the output of the laser device 12 and the characteristics of the laser light LZ via the power source device 18. The laser device 12 of the present embodiment is a YAG laser light generator. The control unit 19 of the laser processing apparatus 11 of the present embodiment 13/33 is set such that the oscillation wavelength of the yag laser is the SHG laser, the THG laser, and the FHG laser high harmonic of the fundamental wavelength l〇64 nm. oscillation. Further, the control unit 19 of the laser processing apparatus 11 of the present embodiment is set to control the pulse yag of the flash lamp 17 via the power supply unit 18 to cause the pulse yag laser to be generated. The total reflection mirror 20 is disposed at a predetermined interval from one end surface of the YAG rod 16 (the left end surface of the yag rod 16 in Fig. 3). This total reflection mirror 2 is configured to totally reflect the laser light LZ output from one end surface of the YAG rod 16 to one end side of the YAG rod 16. The output is arranged at a predetermined interval from the other end face of the YAG rod 16 (the right end face of the YAG. rod 16 in Fig. 3). This output mirror 21 has a semi-transparency that penetrates only the solid-state laser light LZ. The incident optical unit 22 causes the laser light LZ to be incident on the light incident end 13a of the optical fiber 13 by focusing the laser light LZ output from the output mirror 21 of the laser device 12. In the case of the incident optical unit 22 of the present embodiment, the condensing lens 23 is mainly used. The focal length fl of this condensing lens 23 was set to 40 mm. As shown in FIG. 3 and FIG. 4, the optical fiber 13 is an optical waveguide path for transmitting the laser light LZ by the core 24 disposed therein, and is disposed in the processing of the incident optical unit 22 and the injection optical unit. Between the heads 14. Since the laser light LZ is incident from the side of the incident optical unit 22, the end face that enters the optical unit 22 side of the optical fiber 13 of the present embodiment becomes the light incident end 13a of the optical fiber 13, and the end face on the processing head 14 side becomes the optical fiber. The light output end 13b of 13. As shown in Fig. 4, the brake surface of the core 24 in the light-emitting end 13b of the optical fiber 13 is formed in a rectangular shape. The core 24 having a rectangular cross section may be formed over the entire area of the light 14/33 201233477 2 13 . As shown in Fig. 4, the cross section of the light_ in the present embodiment is formed at a distance from the light exiting end 13b = = in the cross section of the core 24 in the remaining region, a distance of 20% = the distance of the rigid edge 4 (in the entire region) The case of the rectangular section of Fig. 24 = the length of the fiber 13 is the total length), from the viewpoint of the intensity distribution of the laser beam LZ, the NA (Numerical~erture) and the operational capacitance of the laser light lz, the degree of 3m to 3Gm is compared. Ok, 5m~1Qm is better. Regarding the size of the core 24 of the optical fiber 13, as shown in Fig. 5, one side l of the rectangular cross section is i 50 times or more of the wavelength λ of the laser light L z (L = 52.52 mm = 489 A in the present embodiment), The diameter R of the profile is . In order to prevent the transmission loss of the laser light LZ, the diameter R of the circular cross section on the light-incident end 13a side does not exceed the value of the side L of the rectangular cross section on the light-emitting end 13b side, but it is preferably a value similar thereto. The processing head 14 is formed by irradiating the laser light LZ emitted from the light-emitting end 13b of the optical fiber 13 to the irradiation portion LP of the workpiece W, and mainly using the collimating lens 25, the curved mirror 26, and the light-emitting lens 27. The focal length f2 of the collimating lens 25 is set to 10 mm. The focal length f3 of the outgoing lens 27 is set to 50 mm. The focal lengths f2 and β are preferably changed as appropriate according to the characteristics of the workpiece W and the irradiation conditions. For fine processing or the like, it is preferable that the rectangular side of the laser light LZ emitted from the light-emitting end 13b is at the irradiation. The LP is optically reduced by the processing head 14 to be set from 1⁄2 to 1/5. Specifically, β/β is set from 1/2 to 1/5. Next, a laser processing method of the present invention using the laser processing apparatus 11 of the present embodiment will be described. The irradiation of the workpiece W is performed by laser processing through four steps of the laser processing apparatus 11 shown in Fig. 3. 15/33 201233477 In the first step, as shown in Fig. 3, the desired pulse from the Thunderbolt 22 is rotated, and the heart is the second and the second is the same. In the first step of the brother--starting with the power supply controlled by the control unit 9 to "slow the flash" 7, and stimulate the atom of the stick. The apricot light 17 'will _ _ _ _ _ _ Greek = value. Although the laser light LZ & YAC ^ l6 one end and the other
的^面輸出，但從YAG棒】6的—端面輸出的雷射光U =AC^_的全反射而從彻棒16的—端面輸入 出V 2! 此外，配設於ΥΑ〇棒16的另-端面側的輸 出使固態雷射光LZ穿透。在本實施形態中，於實 =除圖i的被加工物w的透明膜3的雷射加工的情況，、 係使具有對，㈣適合的波㈣舰(咖Μ ha^c 『neratum .第2向諧波、波長I2—雷射或丁卿編 h獅㈣gen咖。n:第3高諧波、波長=355叫雷射振盛。 猎此，攸雷射|置12向射人光學單元22 衝YAGf射紅z。 ’ 1脈 在第2步驟’如圖3所示，使從雷射裳置 1光二=射入光學單元22而射⑽ J9 LZ的射入方法而言，係藉由根據光纖13的 射==進而行利用射入先學單元22的聚光透鏡23The ^ surface output, but the total reflection of the laser light U = AC ^ _ output from the end face of the YAG rod 6 is input from the end face of the rod 16 V 2! In addition, the other is disposed on the crowbar 16 The output on the end face side penetrates the solid-state laser light LZ. In the present embodiment, in the case of laser processing of the transparent film 3 of the workpiece w of Fig. i, it is possible to have a pair (4) suitable wave (four) ship (Curry ha^c 『neratum. 2 to harmonics, wavelength I2 - laser or Ding Qing compiled lion (four) gen coffee. n: the third high harmonic, wavelength = 355 called laser vibration Sheng. Hunt this, 攸 laser | set 12 to shoot human optical unit 22 rushing YAGf to shoot red z. '1 pulse in the second step' as shown in Fig. 3, so that the method of shooting from the laser beam 1 to the optical unit 22 and the injection (10) J9 LZ is The condensing lens 23 that is incident on the pre-learning unit 22 is used in accordance with the emission of the optical fiber 13 ==
在第3步驟，如圖3所示，使剖面已變換為矩形狀的 雷射光光纖13的出光端13b射出。就第3步驟的具 體手段而言’係藉由將雷射光LZ射入到圖4所示的本實施 形態的光纖]3的人光端13a來進行。由於本實施形態的光 纖13係芯24的剖面在離光纖13的出光端13b 一定距離FL 16/33 201233477 的區域被形成為矩形狀，所以即使射入到光纖13的雷射光 LZ的剖面為圓形，於從光纖13的出光端13b射出之際也 會被變換為雷射光LZ的剖面為矩形狀的矩形脈衝雷射 光。再者，若將前述光纖13的一定距離FL，即芯24的剖 面被形成為矩形狀的區域的光纖13的長度設定為3m以 上’則可使雷射光LZ的剖面強度分布均勻。關於此光纖 13的一定距離fl之詳細内容係如後所述。 在第4步驟，如圖3所示，將從光纖13的出光端i3b 射出的雷射光LZ經由加工頭14而照射於被加工物w的照 射處LP。如圖3所示，雖然加工頭14係由校準透鏡25、 彎曲反射鏡26及出光透鏡27所形成，但即使將經由此等 鏡而從光纖13的出光端13b射出的雷射光LZ照射於照射 處LP，雷射光LZ的剖面形狀也不變化。因此，如圖6所 示，可使照射於照射處LP的雷射光LZ的剖面形狀(雷射光 LZ的光點S的形狀)成為矩形狀。 再者，在本實施形態中，由於校準透鏡25與出光透鏡 27的焦點距離之比為β/ί2=ΐ/2，所以在照射處Lp被形成 為光纖13的矩形的一邊的長度L = 〇.52mm的丨/2的〇 26mm = 260#m。藉此，可使用一邊的長度為26〇#m的矩形剖 面的雷射光LZ實施細微的加工。 如本實施形態，若雷射光LZ的剖面形狀為矩形狀，則 如圖7所示’即使將重疊率〇L之值設定為接近0%之值(例 ^ 耘度），也可以具有均勻寬度的線狀地連續進行 透明膜3的去除(劃割）。因此，藉由使用本實施形態的雷射 加工裝置11執行本發_#射加卫方法，可確實地進行透 月膜3的去除。此外’如圖8所示，由於雷射光的強度分 17/33 201233477 布均勻，所以不僅雷射光的平面剖面形狀，而且被加工物 W的厚度方向的強度分布也近似於矩形狀。因此，即使使 重疊率降低並減少光點數，也可以連續地去除透明膜3。 ^ 再者，如圖7所示，理論上重疊率OL為〇%時可最有 效地進行雷射力。然*，若婦位置的雷射光LZ的光點 鬲開貝丨珀射加工成為不連續。因此，重疊率〇l為大於 〇%之值較好》 ..... 奸/、-人，使用圖9〜圖16，就在全區域具有矩形剖面的 ^ 24的光纖13的長度(光纖13的一定距離FL)與雷射光 勺]面強度分布之關係進行說明。使用的光纖的長 1二L為i〇mm、加、、i〇m的四種。此外，此光纖” 二二24的邊L為〇.53mm(僅光纖13的長度FL為10mm 的情況0.3mm)。 圖9及圖10顯示光纖13的長度FL為l〇mm的情況的 赴于光LZ的剖面強度分布。如圖6所示’將光纖u的光 &的中心设定於灯座標的中心，圖9中顯示γ = 〇的雷 w LZ的X座標的剖面強度分布，圖1〇中顯示χ = 〇的 六土光LZ的Υ座榣的剖面強度分布。如圖9及圖1〇所示， 〜f 13的長度FL為1〇薩的情況，雷射光LZ的強度 13的光點s的端部(X、Y= —0.3職· G.3—平穩 、升’雷射光LZ的強度波形為類似G度〜9G度間的正 3二餘弦波的形狀。此外，如圖9及圖1〇所示，剖面強 度刀布變化的幅度也大。 =可知，在光纖13的長度几為1()_的情況，雷 =5的強度波形成為與理想的矩形波形不_山_ 在外’田射光LZ的極大值、極小值間的強度變化也 18/33 201233477 ㈣5 乂及圖12顯示光纖13㈤長度FL A 3m的情況的 田’、的剖面強度分布。圖u顯示γ = 〇的雷射光LZ 的X座標的剖面強度分布’圖12顯示χ=〇的雷射光π 的Y座標的剖面強度分布。如圖11及圖12所示，光纖In the third step, as shown in Fig. 3, the light-emitting end 13b of the laser light fiber 13 whose cross section has been converted into a rectangular shape is emitted. The specific method of the third step is performed by injecting the laser light LZ into the human optical end 13a of the optical fiber 3 of the present embodiment shown in Fig. 4 . Since the cross section of the optical fiber 13 system core 24 of the present embodiment is formed in a rectangular shape at a distance of a predetermined distance FL 16/33 201233477 from the light exit end 13b of the optical fiber 13, even if the cross section of the laser light LZ incident on the optical fiber 13 is a circle The shape is also converted into rectangular pulsed laser light having a rectangular cross section of the laser light LZ when it is emitted from the light output end 13b of the optical fiber 13. Further, when the predetermined distance FL of the optical fiber 13, that is, the length of the optical fiber 13 in which the cross section of the core 24 is formed into a rectangular shape is set to 3 m or more, the cross-sectional intensity distribution of the laser light LZ can be made uniform. The details of a certain distance fl of this optical fiber 13 will be described later. In the fourth step, as shown in Fig. 3, the laser beam LZ emitted from the light-emitting end i3b of the optical fiber 13 is irradiated to the irradiation portion LP of the workpiece w via the processing head 14. As shown in FIG. 3, the processing head 14 is formed by the collimating lens 25, the curved mirror 26, and the light-emitting lens 27, but the laser beam LZ emitted from the light-emitting end 13b of the optical fiber 13 through the mirrors is irradiated to the irradiation. At the LP, the cross-sectional shape of the laser light LZ does not change. Therefore, as shown in Fig. 6, the cross-sectional shape of the laser light LZ irradiated to the irradiation portion LP (the shape of the spot S of the laser light LZ) can be made rectangular. Further, in the present embodiment, since the ratio of the focal length of the collimating lens 25 to the light exiting lens 27 is β / ί2 = ΐ / 2, the length Lp of the side of the rectangular shape of the optical fiber 13 is formed at the irradiation position L = 〇 .52mm 丨/2 〇 26mm = 260#m. Thereby, fine processing can be performed using the laser light LZ of a rectangular cross section having a length of 26 〇 #m. In the present embodiment, when the cross-sectional shape of the laser light LZ is rectangular, as shown in FIG. 7, even if the value of the overlap ratio 〇L is set to a value close to 0% (example), it is possible to have a uniform width. The removal (scratching) of the transparent film 3 is continuously performed in a line shape. Therefore, by performing the present invention using the laser processing apparatus 11 of the present embodiment, the removal of the vapor permeable membrane 3 can be reliably performed. Further, as shown in Fig. 8, since the intensity of the laser light is uniform, the plane cross-sectional shape of the laser light and the intensity distribution in the thickness direction of the workpiece W are similar to a rectangular shape. Therefore, even if the overlap ratio is lowered and the number of spots is reduced, the transparent film 3 can be continuously removed. ^ Further, as shown in Fig. 7, the laser force can be most effectively performed when the theoretical overlap ratio OL is 〇%. However, if the position of the laser light LZ of the woman's position is opened, the film processing becomes discontinuous. Therefore, the overlap ratio 〇l is a value greater than 〇%. [...], and the length of the optical fiber 13 having a rectangular cross section in the entire region (Fig. 9 to Fig. 16) is used. The relationship between the relative distance FL of 13 and the surface intensity distribution of the laser light scoop is explained. The length of the fiber used is 1 and 2 L are four types of i〇mm, plus, and i〇m. Further, the side L of the optical fiber "22" is 〇.53 mm (only 0.3 mm when the length FL of the optical fiber 13 is 10 mm). Fig. 9 and Fig. 10 show the case where the length FL of the optical fiber 13 is l 〇 mm. The profile intensity distribution of the light LZ. As shown in Fig. 6, the center of the light & the optical fiber u is set at the center of the lamp coordinate, and the intensity distribution of the X coordinate of the ray w LZ of γ = 〇 is shown in Fig. 9, In section 1 , the cross-sectional intensity distribution of the 土 榣 六 土 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The end of the spot s (X, Y = -0.3 position · G.3 - stationary, rising 'the intensity waveform of the laser LZ is a shape of a positive 3 2 cosine wave between G degrees and 9 G degrees. As shown in Fig. 9 and Fig. 1A, the width of the cross-sectional strength knives is also large. = It can be seen that when the length of the optical fiber 13 is 1 () _, the intensity waveform of the lightning = 5 is not the ideal rectangular waveform. The intensity of the field between the maximum and minimum values of the field ray LZ is also 18/33 201233477 (4) 5 乂 and Figure 12 shows the section strength of the field of the fiber 13 (five) length FL A 3m Cloth. FIG γ = u show cross-sectional intensity of the X coordinate of the laser beam LZ square profile 'Figure 12 shows a cross-sectional intensity χ = Y coordinate of the laser beam π square distribution. FIGS. 11 and 12, the optical fiber
很心劇所以可知雷射光LZ的剖面強度分布不均勻。 ί ’ 一到其光點s的另一端(X、0.8麵) U下降。此外，如圖11及圖12所示，相較於圖9及 圖10所不的光纖13的長度FLW〇mm的情況的剖面強度 分布，其等剖面強度分布變化的幅度也小。 由此可知，在光纖13的長度FL為3m的情況，相較 於及圖1〇所示的光纖13的長度孔為10_的情況， 〃田射光LZ的強度波形成為接近理想的矩形波形的形 狀此外，f射光LZ的極大值、極小值間的強度變化也變 J 口匕可知雷射光LZ的剖面強度分布為某種程度的均 勻。 圖13及圖14顯示光纖13的長度為5m的情況中 雷射光LZ㈣面強度分布。圖13顯示y = g的雷射光^ 的X座標的剖面強度分布，圖14顯示χ = 〇的雷射光 的γ座標的剖面強度分布。如圖13及圖14所示，光纖i3 的長^ FL為5m的情況的f射光LZ的強度波形從其光點s 的一端(χ:γ=約—08mm)急劇上升，在26w/cm2附近產 生暫時的―頓，—到其光點s的另—端(X、丫=約0.8响 就急劇下降。此外，如目13及圖14所示，其等剖面強度 分布變化的幅度也小。 19/33 201233477 ==度波形成為接近:二 11及圖====_蝴化侧 變化。因此，細的長声;2么為3m的情況的該強度 的剖面強度分布，比其長^LL25M情況的雷射光LZ 加均勻。 又tL為3m的情況的強度分布更 h H圖15及圖16顯示光纖13的長度FL為10m的 二光LZ田的^^的剖面強度分布。圖15顯示Y=〇的雷 =^的X座標的剖面強度分布，圖Μ顯示χ==〇的雷 上、的Υ座“的剖面強度分布。如圖15及圖16所示， 長度几為咖的情況的雷射光U的強度波形 ，s的一端（χ、γ=約一〇.8咖）急劇上升，在 Wmi近產生暫時的停頓，-到其光點S的另-端 (X、Y-約0.8mm)就急劇下降。此外，如圖15及圖16所 示，可知剖面強度分布變化的幅度也小。 由此可知’在光纖Π的長度FL為胞的情況，和圖 13及圖14所示的光纖13的長度托為如的情況同樣，其 田射光LZ的強度波形麵接近理想祕形波形的形狀。此 外，相較於圖13及圖14所示的光纖13的長度FL為5mm 的情況的該·變化，f料Lz的極大值、極小值間的強 度艾化更小。因此’光纖13的長度孔為工⑽的情況的雷 射光LZ的剖面強度分布比其長度fl &加的情況的強度 分布更加均勻。 即，如前所述，可知光纖13的長度FL越長，雷射光 20/33 201233477 LZ的強度波形越接近理㈣矩形波形，並且雷射光lz的 -I面強度刀布接近均勻。再者，雖然在圖8〜圖π中，就 °】面強度;Q布的波形進行了說明，但對於t峰值的絕對 值’ t是隨時間而變化之值，所以數值本身沒有意義。 存m、二*就在全區域有矩形剖面的芯24的光纖13的長 二兮…射.出NA之關係進行說明。使用的光纖13的矩 ^的邊1和測定到前述強度分布的光纖U同樣， :冰僅光纖13的長度FL為10mm的情況0.3mm)。 此外，其射出似為0.0375，光纖从為〇 4It is very heart-warming that it is known that the intensity distribution of the laser beam LZ is not uniform. ί ' As soon as the other end of its spot s (X, 0.8 faces) U falls. Further, as shown in Figs. 11 and 12, the cross-sectional intensity distribution in the case of the length FLW 〇 mm of the optical fiber 13 shown in Figs. 9 and 10 has a small variation in the intensity of the cross-sectional intensity distribution. From this, it can be seen that when the length FL of the optical fiber 13 is 3 m, the intensity waveform of the field light LZ is close to an ideal rectangular waveform as compared with the case where the length hole of the optical fiber 13 shown in FIG. 1A is 10 mm. In addition, the intensity variation between the maximum value and the minimum value of the f-light LZ is also changed to a certain degree of uniformity in the cross-sectional intensity distribution of the laser light LZ. Fig. 13 and Fig. 14 show the intensity distribution of the laser light LZ (tetra) in the case where the length of the optical fiber 13 is 5 m. Figure 13 shows the profile intensity distribution of the X coordinate of the laser light y = g, and Figure 14 shows the profile intensity distribution of the gamma coordinate of the laser light of χ = 〇. As shown in FIG. 13 and FIG. 14, the intensity waveform of the f-light LZ in the case where the length of the optical fiber i3 is 5 m sharply rises from one end (χ: γ = about -08 mm) of the spot s, and is around 26 w/cm 2 . A temporary "ton" is generated, and the other end of the spot s (X, 丫 = about 0.8 is sharply decreased. Further, as shown in Fig. 13 and Fig. 14, the magnitude of the change in the intensity of the cross-section is also small. 19/33 201233477 == degree waveform becomes close: two 11 and graph ====_the butterfly side changes. Therefore, the thin long sound; 2 is 3m, the intensity distribution of the intensity of the intensity is longer than the length ^ In the case of LL25M, the laser light LZ is uniform. The intensity distribution of the case where tL is 3 m is more h H. Fig. 15 and Fig. 16 show the profile intensity distribution of the two-light LZ field of the optical fiber 13 having a length FL of 10 m. Y=〇的雷=^ The X-coordinate profile intensity distribution, Figure Μ shows the 强度==〇雷上, the Υ座's profile intensity distribution. As shown in Figure 15 and Figure 16, the length is a coffee case. The intensity waveform of the laser light U, one end of s (χ, γ = about one 〇.8 coffee) rises sharply, and a temporary pause occurs in Wmi, to the other end of its spot S (X, Y-about 0.8mm) As shown in Fig. 15 and Fig. 16, it is understood that the magnitude of the change in the profile intensity distribution is also small. This shows that the length FL of the fiber bundle is a cell, and the fiber 13 shown in Figs. 13 and 14 Similarly, the intensity waveform surface of the field light LZ is close to the shape of the ideal shape waveform, and the change is compared with the case where the length FL of the optical fiber 13 shown in Figs. 13 and 14 is 5 mm. The intensity of the maximal value and the minimum value of the material Lz is smaller. Therefore, the intensity distribution of the cross-sectional intensity distribution of the laser light LZ in the case where the length hole of the optical fiber 13 is the work (10) is larger than the length fl & More specifically, as described above, it can be seen that the longer the length FL of the optical fiber 13 is, the closer the intensity waveform of the laser light 20/33 201233477 LZ is to the rectangular waveform, and the -I surface strength of the laser light lz is nearly uniform. Further, although the waveform of the surface intensity and the Q cloth has been described in Fig. 8 to Fig. π, the absolute value t of the t peak is a value that changes with time, so the value itself has no meaning. m, two* have a rectangular profile in the whole area The relationship between the length of the optical fiber 13 of the core 24 and the output of the NA is explained. The side 1 of the moment of the optical fiber 13 used is the same as the optical fiber U which measured the intensity distribution, and the length FL of the optical fiber 13 is only 10 mm. The case is 0.3mm). In addition, the injection looks like 0.0375, and the fiber is from 〇 4
度為在王區域有矩形剖㈣芯24的級13的長 如表2所-^ 3m、5m、1〇m的情況的射出NA之值。 如表2所不，光纖13的 13的射出NA和i射入NA又大^如以下的情況，光纖 一到如，光纖13、_==。光纖13的長訊 NA。同樣地，光纖136#疮，成為.〇45,大於其射入 出NA就& A 一到⑺爪，光纖13的射 的長的咖，大於光❹ 孔變1 it r 的射出點。即，光纖13的長度 長，/、射出ΝΑ就有急劇增加的傾向。 度托與=矩形剖面的芯24的光纖13的長The degree is the value of the emission NA of the case where the length of the stage 13 having the rectangular cross section (four) core 24 in the king region is as shown in Table 2 - 3 m, 5 m, and 1 〇 m. As shown in Table 2, the emission NA and the i-injection NA of the optical fiber 13 are as large as the following, and the optical fiber is as follows, the optical fiber 13, _==. The long message of optical fiber NA. Similarly, the fiber 136# is a hemorrhoid, which is larger than the angle at which the injection of the NA is & A to (7), and the length of the fiber 13 is larger than the exit point of the aperture 1 it r. That is, the length of the optical fiber 13 is long, and /, the emission enthalpy tends to increase sharply. The length of the optical fiber 13 of the core 24 of the rectangular profile
為3m以下沾t 如前述，在光纖13的長度FL 為mΜ下的情況’光，㈣的 21/33 201233477 =xrT而’右光纖13的長度FL超過，則光纖I3的 射出ΝΑ會徐徐變 ^把，則先纖13的 射出ΝΑ不超過光^/艾化的比例也變大。'然而，由於 ΝΑ = 0.4的漸近3 =之值’所以最後射出ΝΑ會以接近 長度FL平穩地變化。但是，若光纖13的 光LZ的處理㈣^光L2^最大傳送㈣大，也有雷射 九L乙的處理變成困難 在30m程度較好。 W戶斤以先纖13的長度FL抑制 即，可知若考慮前述雷射 T7 Λ/,αο 勺。1】面強度分布、射出 ΜΑ及田射先Lz的操作容 為3m〜3Gm程度，特別是5m〜iQm較好3。的長度FL設定 其次，使用圖18〜圖19， M)k LP τ ^ 就照射於被加工物W的照 射處〇>的雷射以的矩形 強度分布的均自化特說明。价H t及θ射光的抑 使光纖=射光U的矩利㈣微小化，最好是 使先纖13的心4的矩形剖面的-邊乙逐漸由大變小。If the length FL of the optical fiber 13 is mΜ, the case where the length FL of the optical fiber 13 is mΜ, 21/33 201233477 = xrT of (4), and the length FL of the right optical fiber 13 exceeds, the emission ΝΑ of the optical fiber I3 will gradually change ^ In addition, the ratio of the emission of the first fiber 13 to no more than the light / Ai is also increased. 'However, since ΝΑ = 0.4 asymptotic 3 = value', the final shot 平稳 will change smoothly with a close length FL. However, if the processing of the light LZ of the optical fiber 13 (4), the maximum transmission (4) of the light L2^ is large, the processing of the laser nine L-B becomes difficult at a level of 30 m. W is suppressed by the length FL of the precursor 13 . That is, it is understood that the above-mentioned laser T7 Λ /, αο spoon is considered. 1] The surface intensity distribution, the emission ΜΑ and the field shot Lz have an operation capacity of 3 m to 3 Gm, especially 5 m to iQm. The length FL is set. Next, the uniformity of the rectangular intensity distribution of the laser irradiated to the irradiation of the workpiece W by M) k LP τ ^ will be described with reference to Figs. 18 to 19 . The suppression of the valence H t and θ illuminating the optical fiber = the sharpness of the illuminating U (four) is preferably such that the side-edge B of the rectangular section of the core 4 of the precursor 13 gradually becomes larger.
若對於圖3所示的γΑΓ ♦、新由大义J G苺射的振盪波長λ = 532nm(SHG)，使芯24的一邊的4 L1 = 260,^489A> 4Μ〇Τ^： L2=175#m = 329 λ、 L3= 133//01 = 250 λ > L4 = 87 # m = 164 λ、 L5 = 24//m = 46 λ 5 和圖15同樣地求出 面強度分布的傾向，則如圖1δ^射光LZW座標的剖 依照圖18，在芯24的一i4.,, 的情況，雷射光的強度波形成為、度為L1、L2、L3、L4 Λ今接近理想的矩形波形的形 22/33 201233477 狀，強度變化也變小。另一方面，在芯24的一邊的長度為 L5的情況’雷射光的強度波形成為和理想的矩形波形不同 的形狀，強度變化也變大。由其結果可說，為了謀求雷射 光LZ的矩形剖面的微小化並且也均勻地保持雷射光的剖 面強度分布’可說14、1/2、：13、1^4要滿足條件，而[5未 滿足條件。即，可知為了謀求雷射的矩形剖面的微小 化並且也均勻地保持雷射光的剖面強度分布，矩形剖面的 一邊L需要雷射光的波長久的^5〇倍以上。 此外，最好若矩形剖面的一邊L為雷射光的波長入的 250倍〜350倍’則雷射光的剖面強度分布更加均勻。 此外’要謀求雷射光LZ的矩洲面的微小化，由於可 使振盪波長λ = 532nm(SHG)振盪的短波長的光源能更有 效地實現芯24的微小化，所以以振盪波長λ為6Q()nm以下 較好。 由於芯24 比保持雷射光的剖面強度分布方面 存在下限，所以要更進-步的f射光Lz的矩形剖面的微小 化’最好如前述般將從光纖13的出光端既射出的雷射光 乙的"矩，一邊在照射處Lp利用加工頭Μ光學地縮小成 0 1二1 光纖13的射出NA在實用上需要 _ :佐右: 率小於1/5，則聚光NA超過0.5， 父大，焦點冰度變小，並不實用。 此外’如圖19所示，最杯腺止碰、 “取好將錢13的芯24的矩形剖 此’可使相鄰位置的光點S的重疊率 由於可用相_線寬來增大射束面積， 可-面利用粗的光纖13 :的约战-。即’ 翰出、，、田铽的雷射光，加工逮度 23/33 201233477 也提向。 程产卜，做為雷射光產生機構，藉由使用M2為〗。〜30 光Γζ'έΓ所周知的橫向多模雷射振盈機(未圖示），可使雷射 面強度分布的均勻性提高。再者，也可以使用縱 向夕枳雷射振盪機(未圖示）。 由以上所述，藉由本實施形態的雷射加工裝置η，由 於將照射的雷射光的剖面形狀形成為矩形狀而進行雷射加 、所以即使使雷射光LZ的重疊率〇L降低，也可以精密 地進行均句寬度的線狀的雷射加工。此外，由於雷射光Lz 的強度分布均勻，所以不僅雷射光LZ的平面剖面形狀，而 且被加工物…的厚度方向的強度分布也成為矩形狀，因此 即使使重疊率降低、減少光點數，也可以實施連續性的雷 射加工。此外，由於光纖13的芯24的矩形剖面的一邊形 成為雷射光LZ的波長的150倍以上，加工頭14形成為縮 小從光纖13的出光端射出的雷射光lz，所以可確實地謀 求照射於焊接對象W的焊接處LP的雷射光LZ的矩形剖面 的微小化及雷射光LZ的剖面強度分布的均勻化。 再者’本發明裝置並不限於前述實施形態等，可按照 需要進行各種變更。 例如’雖然將閃光燈17使用於雷射裝置12,但也可以 使用複數個半導體雷射二極體取代閃光燈17。此時，雷射 光的開關(脈衝點亮）由設置於電源裝置18的雷射諧振器内 部的Q開關的通斷進行即可。 此外’本實施形態的雷射加工裝置11除了去除形成於 表面的薄膜等的目的之外，也可以適用於雷射焊接目的。 <第2實施形態> 24/33 201233477 其次，利用圖3就執行前述專利文獻i的段落(〇〇4〇) 所§己載的高頂帽分布的貫施例進行說明。 在本貫施例中，係使用芯的全長為剖面圓形的光纖(未 圖示)取代圖3的光纖13 ’並且安裝有在該光纖的前端具備 將SHG雷射光的高斯分布變換為高頂帽分布的變換機構的 加工頭（均未圖示）而形成。使用例如LIM〇公司製造的 Gauss-to-Top Hat Converter做為此變換機構即可。 在本實施形態也可以用高頂帽分布的雷射光依本發明 的雷射加工方法實施雷射加工。具體而言，和第1實施形 態同樣’可發揮下述優良的作用效果：從表層3側昭射的 雷射光LZ在下層2被吸收，只在下層2喊面部分產生削 磨’藉由爆炸性地吹走同部分2，表層3部分也被一起吹走 而去除，不會給予下層3大的損傷，可確實地執行只去除 表層2，加工品質也提高。 "次，說明用咼頂帽分布的雷射光依本發明 工方法，對各種太陽能電池實施p3加工的情況。 圖20顯示對於石夕系及有機系的太陽能電池模組$實施 P3加工的情況。在同圖中，太陽能電池層7在石夕系以石夕系 …V組形成，在有機糸以有機系半導體形成。 在圖20中，以高頂帽分布的雷射光Lz的狀熊 寬度W設為可使太陽能電池的各單元絕緣的寬糾列如％ ㈣〜__程度)的剖面矩形狀，從上部電極8側照射。 =，可發揮下述優良的作職果：從上部電極8側照射 勺=光LZ在太陽能電池層7被吸收，只在太陽能電池層 =表面部分產生削磨，藉由爆炸性地吹走同部分7，上部 部分也被-狄走而去除，不會料下層的太陽能 25/33 201233477 電池層7大的損傷，而可確實地執行只去除表層的上部電 =^加玉品質也提高，並且可防止做為太陽 勢的降低。 圖21顯示對於化合物系的CIGS太陽能電池模組5實 施P3加工的情況。在同圖中，太陽能電池層7以含有例如 Cu、In、Ga、Se的多晶體形成，並在上部電極8與太陽能 電池層7之間形成有薄的緩衝層1〇。緩衝層 Cds(硫化鎘)所形成。 ，圖21中，和圖2〇同樣，以高頂帽分布的雷射光 的狀態為將:^宽度W I也& 使太陽能電池的各單元絕緣的 見度的拍矩形狀，從上部電極δ側照射。藉此，可 果:從上部電極8側照射的雷射光LZ在 心皮收，只在緩衝層1G的表面部分產生削磨， 生地吹走同部分】G，上部電極8部分也被一起吹 示，不會給予下層的太陽能電池層 ，實地執行只去除表層的上部電極8，加工而 、’且可防止做為太陽能電池的電動勢的降低。 再者，本發明可按照需要進行各種變更。 總結第1實施形態的雷射加工裝置的特徵如下· 剖面‘邊裝置’其特徵在於：芯的該矩形 早小從光纖的出光端射出的雷料。k 風胃-^，一種雷射加工裝置，其特徵在於：前述射出# 學早㈣缩小倍率為1/2〜1/5。 对出先For the γΑΓ ♦ shown in Fig. 3 and the oscillation wavelength λ = 532 nm (SHG) of the new JG Raspberry, the side of the core 24 is 4 L1 = 260, ^ 489 A > 4 Μ〇Τ ^: L2 = 175 #m = 329 λ, L3 = 133//01 = 250 λ > L4 = 87 # m = 164 λ, L5 = 24//m = 46 λ 5 The same tendency as the surface intensity distribution is obtained in Fig. 15 The cross section of the 1δ^light LZW coordinate is in accordance with Fig. 18. In the case of an i4., of the core 24, the intensity waveform of the laser light becomes L1, L2, L3, L4, which is close to the ideal rectangular waveform shape 22/ 33 201233477 Shape, the intensity change also becomes smaller. On the other hand, when the length of one side of the core 24 is L5, the intensity waveform of the laser light is different from the ideal rectangular waveform, and the intensity variation also becomes large. As a result, it can be said that in order to miniaturize the rectangular cross section of the laser light LZ and to uniformly maintain the cross-sectional intensity distribution of the laser light, it can be said that 14, 1/2, 13 and 1^4 satisfy the condition, and [5] The condition is not met. In other words, it is understood that in order to minimize the rectangular cross section of the laser and to maintain the cross-sectional intensity distribution of the laser light uniformly, the side L of the rectangular cross section needs to be more than 5 times longer than the wavelength of the laser light. Further, it is preferable that the cross-sectional intensity distribution of the laser light is more uniform if one side L of the rectangular cross section is 250 to 350 times the wavelength of the laser light. In addition, in order to miniaturize the surface of the laser light LZ, since the short-wavelength light source that oscillates the oscillation wavelength λ = 532 nm (SHG) can more effectively achieve the miniaturization of the core 24, the oscillation wavelength λ is 6Q. () nm or less is preferred. Since the core 24 has a lower limit than the profile intensity distribution for maintaining the laser light, the miniaturization of the rectangular cross section of the further step f-light Lz is preferably a laser light which is emitted from the light-emitting end of the optical fiber 13 as described above. The moment of the "moment, while the illumination Lm is optically reduced to 0 by the processing head, the emission NA of the optical fiber 13 is practically required _: Zuo right: the rate is less than 1/5, the concentration NA exceeds 0.5, the parent Large, the focus of the ice becomes smaller, not practical. In addition, as shown in Fig. 19, the most cup gland collision, "take the rectangular shape of the core 24 of the money 13" to increase the overlap ratio of the spot S at the adjacent position due to the available phase_line width The beam area, the face-to-face use of the thick fiber 13: the battle - that is, 'Han,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The mechanism can be used to improve the uniformity of the intensity distribution of the laser surface by using M2 as the 〗 〖30 横向 έΓ 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向 横向In the laser processing apparatus η of the present embodiment, the laser processing apparatus η of the present embodiment is configured to form a rectangular shape in which the cross-sectional shape of the irradiated laser beam is formed in a rectangular shape, so that even By reducing the overlap ratio 〇L of the laser light LZ, it is possible to precisely perform linear laser processing with a uniform sentence width. Further, since the intensity distribution of the laser light Lz is uniform, not only the plane cross-sectional shape of the laser light LZ but also The intensity distribution in the thickness direction of the workpiece is also rectangular, so Even if the overlap ratio is lowered and the number of light spots is reduced, continuous laser processing can be performed. Further, since one side of the rectangular cross section of the core 24 of the optical fiber 13 is formed to be 150 times or more the wavelength of the laser light LZ, the processing head 14 is formed. In order to reduce the laser light lz emitted from the light-emitting end of the optical fiber 13, it is possible to reliably reduce the miniaturization of the rectangular cross-section of the laser light LZ of the welding portion L of the welding target W and the uniformity of the cross-sectional intensity distribution of the laser light LZ. Further, the apparatus of the present invention is not limited to the above-described embodiment and the like, and various modifications can be made as needed. For example, although the flash unit 17 is used for the laser device 12, a plurality of semiconductor laser diodes may be used instead of the flash unit 17. At this time, the switch (pulse lighting) of the laser light may be performed by the ON/OFF of the Q switch provided inside the laser resonator of the power supply device 18. Further, the laser processing apparatus 11 of the present embodiment is removed except for being formed on the surface. The purpose of the film or the like can also be applied to the purpose of laser welding. <Second embodiment> 24/33 201233477 Next, the aforementioned patent is executed using FIG. The paragraph of 献i (〇〇4〇) is described in the example of the distribution of the high-top hats contained in the §. In this example, the fiber with a full-length circular cross section is replaced by a fiber (not shown). The optical fiber 13' of Fig. 3 is formed by a processing head (none of which is shown) including a conversion mechanism for converting a Gaussian distribution of SHG laser light into a high-top hat distribution at the tip end of the optical fiber. For example, it is manufactured by LIM Corporation. The Gauss-to-Top Hat Converter may be used as the conversion mechanism. In the present embodiment, the laser processing of the high-top hat may be used to perform laser processing according to the laser processing method of the present invention. Specifically, the first implementation The same shape can exert the following excellent effects: the laser light LZ emitted from the surface of the surface layer 3 is absorbed in the lower layer 2, and only the surface of the lower layer 2 is subjected to sharpening' by explosively blowing away the same portion 2, the surface layer The 3 parts are also removed by blowing away, and the damage of the lower layer 3 is not given, and only the surface layer 2 is removed, and the processing quality is also improved. "Times, indicating the case where the laser light distributed by the dome cap is subjected to p3 processing for various solar cells according to the method of the present invention. Fig. 20 shows a case where the P3 processing is performed for the solar cell modules of the Shixia and organic systems. In the same figure, the solar cell layer 7 is formed in the Shixia system in the group of V, and the organic germanium is formed in the organic semiconductor. In FIG. 20, the beam width W of the laser light Lz distributed with the top hat is set to have a rectangular shape in which the width of each unit of the solar cell is insulated, such as a degree of (%) to __, from the upper electrode 8. Side illumination. =, can play the following excellent work results: from the upper electrode 8 side irradiation spoon = light LZ is absorbed in the solar cell layer 7, only in the solar cell layer = surface part of the grinding, by explosively blowing away the same part 7, the upper part is also removed by -Di, it is not expected that the lower layer of solar energy 25/33 201233477 battery layer 7 large damage, and can be performed to remove only the upper layer of the surface layer = ^ plus jade quality is also improved, and Prevent as a reduction in the solar potential. Fig. 21 shows a case where P3 processing is performed on the CIGS solar battery module 5 of the compound system. In the same figure, the solar cell layer 7 is formed of a polycrystal containing, for example, Cu, In, Ga, Se, and a thin buffer layer 1 is formed between the upper electrode 8 and the solar cell layer 7. The buffer layer is formed by Cds (cadmium sulfide). In Fig. 21, similarly to Fig. 2A, the state of the laser light distributed in the high-top cap is: a width WI also & a rectangular shape of the visibility of each unit of the solar cell, from the upper electrode δ side Irradiation. Thereby, it is possible that the laser light LZ irradiated from the side of the upper electrode 8 is collected in the carpel, and only the surface portion of the buffer layer 1G is ground, the same portion G is blown away, and the upper electrode portion 8 is also blown together. The lower layer of the solar cell layer is not given, and the upper electrode 8 which removes only the surface layer is performed in the field, and it is processed, and the electromotive force of the solar cell can be prevented from being lowered. Furthermore, the present invention can be variously modified as needed. The features of the laser processing apparatus according to the first embodiment are summarized as follows. The cross-section "side device" is characterized in that the rectangle of the core is small and small, and the light is emitted from the light-emitting end of the optical fiber. k 风胃-^, a laser processing apparatus characterized in that the above-mentioned injection #学早(四) reduction ratio is 1/2 to 1/5. For the first
第二，一種雷射加工裝置，其特徵在於：前述光纖的 邊形成為刖述雷射光的波長的250倍〜 26/33 201233477 倍。 前述雷射裝 前述光纖的 第四，-種雷射加工裝置’其特徵在於 置輸出的雷射光的波長為6_m以下。 第五’-種雷射加工裝置’其特徵在於 矩形剖面形成為長方形。 第六’-種雷射加工裝置，其特徵在於 由多模雷射振錢所形成。 ㈣裝置仏 第七’-種雷射加工裝置，其特徵在於：前 產生機構係由縱向多模雷射振盪機所形成，前述芯：該矩 形麻的-邊形成騎述雷射光的波㈣25倍以;;的矩 弟八，一種雷射加工裝置，其特徵在於：前述光纖的 矩形剖面形成為長方形。 尤，·戚的 【圖式簡單說明】 、圖1為顯示#由本發明的雷射加工方法加工後的狀態 的被加工物的縱剖面圖。 圖2為顯示藉由本發明的雷射加工方法的沿著膜厚方 向在被加工物上行進的f射光的強度變化的特性圖。 圖3為顯示本發明的雷射加工裝置的第1實施形能的 圖4為顯示本實施形態的光纖的斜視圖。 圖5為顯示本實卿態的域m寸的剖面圖。 圖6為顯示雷射光的矩形光點藉由本實施形態的雷射 加工裝置而照射於被加工物的照射處的狀態的平面圖。 圖7為顯示藉由本實施形態的雷射加工褒置而將雷射 光重複照射於被加工物的照射處的狀態的平面圖。 圖8為圖7的剖面圖。 27/33 201233477 圖9為顯示光纖的長度為l〇mm的情況的Y = 〇的 光的剖面強度分布的圖表。 田 圖10為顯示光纖的長度為1〇麵的情況的χ = 射光的剖面強度分布的圖表。 圖11為顯示光纖的長度為3m的情況的γ = 光的剖面強度分布的圖表。 田射 圖12錢示光纖的長度為3m的情況的χ = 〇的 先的剖面強度分布的圖表。 ’ 圖13為顯示光纖的長度為5m的情況的γ = 忐的剖面強度分布的圖表。 射 圖14為顯示光纖的長度為5m的情χ 先的剖面強度分布的圖表。 的田射 光的光纖岐度為1〇m的情況的Υ=〇的雷射 J Μ面強度分布的圖表。 =16為顯不光纖的長度為1Qm的情況的χ = %的剖面強度分布的圖表。 田耵 ^ 17為顯示在全區域有矩形剖面的芯的域的長度與 、出Να之關係的圖表。 時的y 8為顯示對於雷射光的波長使光纖的芯的粗細變化 、二〇的雷射光的剖面強度分布的圖表。 重福=19為顯不使用具有長方形的矩形刮面的雷射光進行 ‘、、、射的狀態的平面圖。 的為二2〇為顯示藉由本發明的雷射加工方法加工後的狀態 園。？加工物的矽系及有機系的太陽能電池模組的縱剖面 隐λ 1為顯示藉由本發明的雷射加工方法加工後的狀態 28/33 201233477 的為被加工物的化合物 圖22(a)及(b)為_ _、的太陽忐電池模組的縱剖面圖。 射加工方法的被加卫^使用習知高斯分布的雷射光的雷 22(b)顯示加工後。、縱剖面，目22⑻顯示加工前’圖 圖23為和顯示習知 圖24⑻及(b)為顯示使方^的，20⑻同樣的圖。 雷射加工方法的被加自知㊣頂帽分布的雷射光的 圖24(b)顯示加工後。、縱』面’圖24⑻顯示加工前’ 圖25為顯示藉由習知+ 被加工物的㈣及有機加工後的狀態的為 【主要元件符號說明】 1 基板 2 下層 2a 損傷部分 3 表層 3a 錐狀部分 3b 翹起部分 3c 殘留部分 5 太陽能電池模組 6 下部電槌 7 太陽能電池層 8 上部電桠 11 雷射加X裝置 12 雷射裝置 13 光纖 13a 入光端 ‘池模組的縱剖面圖。 201233477 13b 出光端 14 加工頭 15 移動機構 16 YAG棒 17 閃光燈 18 電源裝置 19 控制部 20 全反射鏡 21 輸出鏡 22 射入光學單元 23 聚光透鏡 24 25 校準透鏡 26 彎曲反射鏡 27 出光透鏡 LZ 雷射光 f 1 > f2 ' f3 焦點距離 W 被加工物 LP 照射處 S 光點 30/33Secondly, a laser processing apparatus is characterized in that the side of the optical fiber is formed to be 250 times to 26/33 201233477 times the wavelength of the laser light. The fourth laser-type processing apparatus for mounting the above-described optical fiber is characterized in that the wavelength of the output laser light is 6 mm or less. The fifth '-type laser processing apparatus' is characterized in that a rectangular cross section is formed in a rectangular shape. A sixth '-type laser processing apparatus characterized by being formed by multi-mode laser vibration. (4) Apparatus 仏 a seventh '-type laser processing apparatus, characterized in that: the front generating mechanism is formed by a longitudinal multimode laser oscillating machine, and the core: the side of the rectangular hemp forms a wave of riding the laser light (four) 25 times A laser processing apparatus of the present invention is characterized in that the rectangular cross section of the optical fiber is formed in a rectangular shape. In particular, FIG. 1 is a longitudinal cross-sectional view showing a workpiece in a state processed by the laser processing method of the present invention. Fig. 2 is a characteristic diagram showing a change in intensity of f-ray light traveling on a workpiece in a film thickness direction by the laser processing method of the present invention. Fig. 3 is a perspective view showing the first embodiment of the laser processing apparatus of the present invention. Fig. 4 is a perspective view showing the optical fiber of the embodiment. Fig. 5 is a cross-sectional view showing the domain m of the real state. Fig. 6 is a plan view showing a state in which a rectangular spot of laser light is irradiated onto an irradiation spot of a workpiece by the laser processing apparatus of the embodiment. Fig. 7 is a plan view showing a state in which laser light is repeatedly irradiated onto an irradiation spot of a workpiece by the laser processing apparatus of the embodiment. Figure 8 is a cross-sectional view of Figure 7. 27/33 201233477 Figure 9 is a graph showing the profile intensity distribution of light with Y = 〇 for the case where the length of the fiber is l〇mm. Field Figure 10 is a graph showing the cross-sectional intensity distribution of χ = illuminating in the case where the length of the optical fiber is 1 〇. Fig. 11 is a graph showing the cross-sectional intensity distribution of γ = light in the case where the length of the optical fiber is 3 m. Fig. 12 shows the graph of the first section intensity distribution of χ = 〇 in the case where the length of the fiber is 3 m. Fig. 13 is a graph showing the profile intensity distribution of γ = 忐 in the case where the length of the optical fiber is 5 m. Fig. 14 is a graph showing the profile intensity distribution of the case where the length of the optical fiber is 5 m. In the case where the fiber diameter of the light is 1 〇 m, the Υ = 雷 laser J Μ surface intensity distribution chart. =16 is a graph of the 强度 = % profile intensity distribution for the case where the length of the fiber is 1 Qm. Tian Hao ^ 17 is a graph showing the relationship between the length of the domain of the core having a rectangular cross section and the Να. The y 8 at the time is a graph showing the change in the thickness of the core of the optical fiber with respect to the wavelength of the laser light and the intensity distribution of the cross-sectional laser light. It is a plan view of the state of ‘,, and shot, which is a laser light having a rectangular rectangular scraping surface. The condition is 2 〇 to show the state after processing by the laser processing method of the present invention. ? The longitudinal section hidden λ 1 of the tantalum system of the processed product and the organic solar cell module is a compound which shows the state of the workpiece 28/33 201233477 processed by the laser processing method of the present invention, FIG. 22(a) and (b) A longitudinal section view of the solar cell module of _ _. The laser processing method is used to protect the laser light using the conventional Gaussian distribution of the thunder 22(b) after processing. The vertical section, the head 22 (8) shows the pre-processing 'Fig. 23 and the conventional display. Figs. 24 (8) and (b) are the same as the display of the square, 20 (8). The laser light of the laser processing method is applied to the laser beam of the distribution of the top cap. Fig. 24(b) shows the processing. Fig. 24 (8) shows the pre-processing' Fig. 25 shows the state of the (4) and organic processing by the conventional + workpiece (the main component symbol description) 1 substrate 2 lower layer 2a damaged portion 3 surface layer 3a cone Shaped portion 3b raised portion 3c residual portion 5 solar cell module 6 lower electrode 7 solar cell layer 8 upper electrode 11 laser plus X device 12 laser device 13 fiber 13a light end end of the pool module . 201233477 13b Light-emitting end 14 Processing head 15 Moving mechanism 16 YAG rod 17 Flash 18 Power supply unit 19 Control unit 20 Total reflection mirror 21 Output mirror 22 Injection optical unit 23 Condenser lens 24 25 Calibration lens 26 Curved mirror 27 Light-emitting lens LZ Ray Spotlight f 1 > f2 ' f3 Focus distance W Irradiated by workpiece LP S Spot 30/33
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| US8198566B2 (en) * | 2006-05-24 | 2012-06-12 | Electro Scientific Industries, Inc. | Laser processing of workpieces containing low-k dielectric material |
| JP4752033B2 (en) * | 2006-09-29 | 2011-08-17 | グンゼ株式会社 | Touch panel and method for manufacturing touch panel |
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| JP5259121B2 (en) * | 2007-05-23 | 2013-08-07 | シャープ株式会社 | Manufacturing method of semiconductor device using laser processing method |
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