TW201231597A - Adhesive composition for semiconductor and adhesive film comprising the same - Google Patents

Adhesive composition for semiconductor and adhesive film comprising the same Download PDF

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Publication number
TW201231597A
TW201231597A TW100147462A TW100147462A TW201231597A TW 201231597 A TW201231597 A TW 201231597A TW 100147462 A TW100147462 A TW 100147462A TW 100147462 A TW100147462 A TW 100147462A TW 201231597 A TW201231597 A TW 201231597A
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Taiwan
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adhesive composition
adhesive
semiconductor
amine curing
curing agent
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TW100147462A
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Chinese (zh)
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TWI458798B (en
Inventor
Baek-Soung Park
Dong-Seon Uh
Ki-Tae Song
Jae-Won Choi
In-Hwan Kim
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Cheil Ind Inc
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J133/00—Adhesives based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Adhesives based on derivatives of such polymers
    • C09J133/04—Homopolymers or copolymers of esters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/304—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive being heat-activatable, i.e. not tacky at temperatures inferior to 30°C
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Adhesive Tapes (AREA)
  • Die Bonding (AREA)

Abstract

The present disclosure provides an adhesive composition for a semiconductor having a compressive strength of 100 to 1, 500gf/mm<SP>2</SP> at 150 DEG C after curing at 125 DEG C for 30 minutes and an adhesive film comprising the same. The adhesive composition for a semiconductor may shorten or eliminate a semi-curing process which is generally involved after bonding the same kinds of chips. The adhesive composition for the semiconductor secures a minimum modulus in wire boding following die bonding to minimize voids and provides a remaining curing rate after various curing processes subsequent to die bonding to readily eliminate voids in EMC molding.

Description

201231597 六、發明說明： 【發明戶斤屬 &lt;枝術領域】 發明領域 本發明/步及#用於半導體的黏著劑組成物和包括該 組成物的黏著賴。更具體地，本發明涉及麟半導體的 黏著劑組録，所心絲確㈣粒接合㈣魏接合中 的最小模里以具有優異的初始可靠性，並通過胺固化劑實 現在晶片接合之後的多_化程序後提供較高反應溫度範 圍内的餘留©化速率’從而有利於消除emc成型中的空 隙。本發明還涉及包括該組成物的黏著劑膜。 【先前技術】 發明背景 為了實現具有高容量的半導體裂置，使用提高單位面 積單元數量蚊性高度集纽和置衫個W以提高容量 的定量封裝法。 作為封裝料，通f❹多晶片㈣(MCP)，該方法中 用黏著劑置放多個晶片，並用引線接合使上下晶片電連接。 士在置^導體封裝晶片中’當登直安裝相同尺寸的晶 片時，通常預纽附隔離物以確保用於接合引線的空間， 從而導致用於_該隔離物的額外程序的^卜近來，較 佳為將下接合引線直接提供在貼岐上晶片的下表面的黏 著劑膜’以簡化程序係為較佳者。因此，黏著劑層要求在 約100至15(TC的晶片接合溫度下足叫接合引線從中穿過 的流動性。如果黏著劑層流動性不足，會出現品質缺陷， 201231597 如引線塌陷或壓縮。 因此’引入高流動性黏著劑以解決低流動性黏著劑不 能適應接合引線的問題。然而，高流動性黏著劑層會導致 不一致的黏合體，因為晶片可因高流動性產生的過度黏合 性能而在晶片接合程序中彎曲。同時，如果黏合體基板在 表面上具有不一致的部份，空隙形成在黏著劑層和基板之 間的界面上。一旦形成，空隙無法被去除，而會在黏著劑 固化或環氧成型（EMC成型）程序期間固定，從而導致半導 體晶片封裝的缺陷，並降低苛刻條件下的可靠性。因此， 建議於接合相同類型的晶片後需使用半固化程序。然而， 這種方法由於額外程序和生產率降低而不利。 【發明内容】 發明概要 本發明提供一種用於半導體的黏著劑組成物和包括該 組成物的黏著劑膜，所述黏著劑組成物可縮短或省去半固 化程序，消除或最小化空隙，在晶片接合之後的多個程序 後提供餘留固化速率(remaining curing rat幻以消KEMC成 型中的空隙，並有效去除包括晶片貼裴和成型的半導體製 程序中產生的空隙以提高可加工性和可靠性。此外，可 將所述黏著劑組成物塗佈至FOW，FOW要求接合引線的穿 、並具有’肖除EMC成型中的空隙性能，從而獲得接合 相同種類晶片中的可加工性和可靠性，其中要求黏著劑膜 包括所述接合引線。 本發明的-個態樣提供-種用於半導體的黏著劑組成 201231597 物。所述黏著劑組成物在於125°C下固化30分鐘後可在i5〇°C 具有100至1500gf/mm2的抗壓強度。較佳地，所述用於半導 體的黏著劑組成物具有500至1 〇〇〇gf/mm2的抗壓強度。 所述用於半導體的黏著劑組成物可包括黏結劑樹脂、 環氧樹脂和胺固化劑。所述黏結劑樹脂為（甲基）丙烯酸酯共 聚物，且所述胺固化劑包括由通式1表示的第一胺固化劑和 由通式2表示的第二胺固化劑： [通式1]201231597 VI. Description of the Invention: [Invention of the genus &lt; branching field] Field of the Invention The present invention/step and #adhesive composition for a semiconductor and an adhesive comprising the composition. More specifically, the present invention relates to an adhesive assembly of a lining semiconductor, which has a minimum initial modulus in the (four) grain bonding (four) wei bonding to have excellent initial reliability, and is realized by an amine curing agent after wafer bonding. The _chemical process provides a residual rate of reaction within the higher reaction temperature range to facilitate elimination of voids in emc molding. The invention also relates to an adhesive film comprising the composition. [Prior Art] Background of the Invention In order to realize a semiconductor crack having a high capacity, a quantitative encapsulation method of increasing the number of unit area units and increasing the capacity of the mosquito-like height and the shirt is used. As a package material, a plurality of wafers (MCP) are used, in which a plurality of wafers are placed with an adhesive, and wire bonding is used to electrically connect the upper and lower wafers. When mounting a wafer of the same size in a conductor package wafer, the spacer is usually pre-attached to ensure space for bonding the leads, resulting in an additional procedure for the spacer. Preferably, the lower bonding leads are provided directly to the adhesive film 'attached to the lower surface of the wafer to simplify the programming. Therefore, the adhesive layer requires a fluidity through which the bonding wire is passed at a wafer bonding temperature of about 1500. If the adhesive layer is insufficient in fluidity, quality defects occur, and 201231597 is collapsed or compressed. 'Introducing high-flow adhesives to solve the problem that low-flow adhesives can't fit the bond wires. However, high-flow adhesive layers can cause inconsistent bonds because the wafers can be over-bonded due to high flow properties. Bending in the wafer bonding process. Meanwhile, if the adhesive substrate has an inconsistent portion on the surface, the void is formed at the interface between the adhesive layer and the substrate. Once formed, the void cannot be removed, and the adhesive may be cured or Fixed during the epoxy molding (EMC molding) process, resulting in defects in semiconductor wafer packaging and reduced reliability under severe conditions. Therefore, it is recommended to use a semi-curing procedure after bonding the same type of wafer. However, this method is due to Additional procedures and productivity are reduced. Advantages of the Invention The present invention provides An adhesive composition for a semiconductor and an adhesive film comprising the composition, the adhesive composition can shorten or eliminate a semi-curing process, eliminate or minimize voids, and provide after a plurality of procedures after wafer bonding The remaining curing rate eliminates the voids in the KEMC molding and effectively removes voids generated in the semiconductor process including wafer bonding and molding to improve workability and reliability. Further, the adhesion can be achieved. The composition is applied to the FOW, which requires the bonding of the bonding wires and has the ability to remove the voids in the EMC molding, thereby obtaining workability and reliability in bonding the same kind of wafer, wherein the adhesive film is required to include the Bonding Leads. An aspect of the present invention provides an adhesive composition for semiconductors 201231597. The adhesive composition can be cured at 125 ° C for 30 minutes and can have 100 to 1500 gf / mm 2 at i5 ° C. Preferably, the adhesive composition for a semiconductor has a compressive strength of 500 to 1 〇〇〇 gf/mm 2 . The adhesive may include a binder resin, an epoxy resin, and an amine curing agent. The binder resin is a (meth) acrylate copolymer, and the amine curing agent includes a first amine curing agent represented by Formula 1 and The second amine curing agent represented by Formula 2: [Formula 1]

其中A表示C1至C6直鏈或支鏈的伸烷基，Ri、r2、r3、 R4、R5、R6、R7、R8、R+R〗。各自獨立地表示氫、CaC4 垸基、Cl至C4烷氧基、或氨基，且Ri、r2、r3、r4、r5、 心、R7、Rs、R+R1()中的至少兩個包括氨基；且 [通式2]Wherein A represents a straight or branched alkyl group of C1 to C6, and Ri, r2, r3, R4, R5, R6, R7, R8, R+R. Each independently represents hydrogen, CaC4 fluorenyl, Cl to C4 alkoxy, or amino, and at least two of Ri, r2, r3, r4, r5, core, R7, Rs, R+R1() include an amino group; And [Formula 2]

其中 B 表示-SOr、-NHCO-或-〇-，&amp;、R2、r3、r4、 I、r6 ' r7、r8、r9和r⑴各自獨立地表示氫、C^C4烷基、 Cl至C4院氧基、或氨基’且Ri、r2、r3、r4、r5、r6、r7、Wherein B represents -SOr, -NHCO- or -〇-, &amp;, R2, r3, r4, I, r6 'r7, r8, r9 and r(1) each independently represent hydrogen, C^C4 alkyl, Cl to C4 Oxygen, or amino' and Ri, r2, r3, r4, r5, r6, r7,

Rs、R9和R10中的至少兩個包括氨基。 所述用於半導體的黏著劑組成物在15〇。〇下固化3〇分 201231597 鉍的_人循環後，在黏合體上可具有小於15%的第一空隙 (Vc)面積比。 所迷（甲基）丙烯酸酯共聚物在25 °C可具有1000至 300000cps的黏度。 所述（甲基）丙烯酸酯共聚物可包括1至20wt%的（甲基） 丙稀酸縮水甘油酿。 基於所述用於半導體的黏著劑組成物的總量’所述黏 結劑樹脂的含量可為35wt%至70wt%(就固含量而言）。 所述％氧樹脂可包括含聯苯基的環氧樹脂。在一個具 體實鈀例中’所述環氧樹脂可包括3至100wt%的所述含聯 苯基的環氧樹脂。 所述胺固化劑可包括0.5至50wt%的所述第一胺固化劑 和50至99.5wt%的所述第二胺固化劑。 所述第一胺固化劑與所述第二胺固化劑的重量比可為 1 : 1.1至 1 : 1〇〇 〇 所述用於半導體的黏著劑組成物在15CTC下固化30分 鐘並在175°C下EMC成型60秒後，在黏合體上可具有小於 15%的第二空隙(Vm)面積比。 所述黏結劑樹脂的含量可大於所述環氧樹脂和所述胺 固化劍的總量。 戶斤述黏著劑組成物可進一步包括石夕__和 所述用於半導體的黏著劑組成物矸 、’ J岜括25至7〇wi%的 所述黏結劑樹脂、5至35wt%的所述環惫的 衣虱刼脂、！至J5w 所述胺固化劑、0.01至5wt%的所述 的 夕烷偶聯劑和10至 201231597 1 55wt%的所述填料。 本毛月的另一癌樣提供一種由所述黏著劑組成物形成 的用於半導體的黏著劑膜。 H 方包式】 較佳實施例之詳細說明 以下將詳細描述示例性具體實施例。然而，應理解的 {以下具體實施例僅以說明的方式提供，且不理解成限制 本發明。本發明的範圍僅由所附申請專利範圍及其等效方案 限定。 文中，除非另作說明，將基於固含量說明各組分的含量。 根據本發明示例性具體實施例的用於半導體的黏著劑 組成物在125 C固化30分鐘後在150°C下具有1〇〇至 1500gf/mm2的抗壓強度。文中，術語“抗壓強度，，是指黏著 劑組成物在125°C固化30分鐘形成為400μπι厚的層壓體並 用ARES在150°C、0.lmm/sec下壓制後的〇.〇5mm的壓制距離 (pressed distance)下的強度。具體地，該黏著劑組成物可具 有500至1200gf/mm2的抗壓強度，例如530至1000gf/mm2。 高抗壓強度有利於確保引線接合中的可靠性並有效去除 EMC成型中的空隙。在測定抗壓強度時，在125°C固化30 分鐘相當於在150°C固化1〇分鐘。 黏著劑組成物具有小於15%的一次循環後的空隙(Vc) 面積比，較佳小於11%，且更佳小於6%。 文中，術語“一次循環固化”是指將基板/黏著劑層/基板 樣品置於熱板上並使黏著劑層在15 0 °C固化3 0分鐘的程 201231597 序。150°C和30分鐘是晶片接合後的引線接合所需的溫度和 時間。此時’該程序中產生的空隙定義為“一次循環後的空 隙（下文稱作Vc)”。通過用顯微鏡(放大倍數：χ25)採集的上 述條件下固化的黏著劑層的圖像分析，用數值表示空隙面 積相對於測定面積來得到空隙面積比(V c面積比）((V c面積 比=空隙面積/總面積xl〇〇) ^當空隙的面積比（Vc)大於15% 時，可靠性會變差。 兩種樣品可製造如下。 可通過將本發明的黏著劑膜形成為50至60μπι的厚 度’隨後在60°C下層壓在兩塊iommxiomm的載玻片之間來 製備基板/黏著劑層/基板樣品。 或者’可通過將研磨後的晶圓置於熱板上，用異丙醇 (IPA)除去雜質並在晶圓的光面上貼裝所製得的黏著劑膜來 製備PCB(或晶圓）/黏著劑層/晶片樣品。此時，貼片機設定 溫度為60°C的實際表面溫度。將貼裝後的黏著劑膜和晶圓 切成lOmmxlOmm的晶片，並在12〇。(：和lkgf/sec下將本發明 黏著劑形成在其一面上的晶片（黏著劑+晶片）貼附至在以 下條件下進行預處理的PCB。 PCB : 62mm單觸發 PCB_ PCB烘烤：在ΐϋ°(：的爐中1小時 烘烤後等離子 在一次循環固化’然後在175Χ：下EMC成型60秒後， PCB(或晶片）和黏著劑層之間會產生空隙。此時，該程序中 產生的空隙定義為“成型後的空隙(Vm)，，。在以上條件下固 化並成型後測定空隙(Vm)。用分割雜（singUiati〇n saw)將樣 201231597 • 品分成單個單元，去除PCB以測定Vm，並用研磨機研磨以 使黏著劑膜的黏著劑層暴露。此時，研磨至PCB的焊料光 刻膠(SR)層僅輕微保留為半透明，以有利於觀察空隙。 研磨後’用顯微鏡(放大倍數：x25)採集暴露的黏著劑 層的圖像，並分析確定空隙是否存在，並用數值表示Vm。 為了用數值表示空隙(Vm)，將該總面積分成10x10區域，計 算具有空隙的區域並表示為百分比（Vm面積比=空隙面積/ 總面積χ100)〇當vm的面積比小於10%時，本發明的黏著劑 組合確定為空隙消除。當Vm的面積比為10%或更高時，本 發明的黏著劑組成物確定為未消除空隙。當Vm的面積比小 於10% ’可獲得優異的可靠性，並且不會發生晶片蠕變 (creeping) 〇 上述用於半導體的黏著劑組成物可包括黏結劑樹脂、 環氧樹脂和胺固化劑。 黏結劑樹脂 該黏結劑樹脂可只包括（甲基）丙烯酸酯共聚物，或包括 (曱基）丙烯酸酯共聚物與其它聚合物樹脂的組合。在一個具 體實施例中’黏結劑樹脂可為（甲基）丙烯酸酯共聚物。具體 地，（甲基）丙烯酸酯共聚物可包括環氧基。 在一個具體實施例中，（曱基）丙烯酸酯共聚物可包括具 有500至10000的環氧當量的（曱基）丙烯酸酯共聚物。在此範 圍内’熱固化前可呈現高黏性，以及熱固化後獲得的高黏附 性0 (曱基）丙烯酸酯共聚物可具有10000至5 000000g/mol的 201231597 重均分子量，較佳為50000至1000000g/mol。在此範圍内， 可獲得優異的塗層成膜性。 上述（曱基）丙烯酸酯共聚物可為（曱基）丙烯酸燒基g旨 單體和（曱基）丙烯酸縮水甘油酯單體的共聚物。 (甲基）丙烯酸烷基酯單體起到對膜賦予黏性的作用。 (甲基）丙烯酸烷基酯單體可包括，但不限於甲基内歸酸_2_ 乙基己醋、丙稀酸異辛醋、丙烯酸-2-乙基己醋、内歸酸乙 酯、丙烯酸正丁酯、丙烯酸異丁酯、甲基丙烯酸十八酿等。 上述（曱基）丙烯酸酯共聚物可包括50至90wt%，較佳為65至 85wt%的（甲基）丙烯酸烷基酯。在此範圍内，可獲得優異的 黏附性和可靠性。 (甲基）丙烯酸縮水甘油酯單體的實例可包括，但不限於 甲基丙烯酸縮水甘油酯、丙烯酸縮水甘油酯等。具體地，（甲 基）丙烯酸酯共聚物可包括1至20wt%，較佳為3至8wt%的 (曱基）丙烯酸縮水甘油酯。在此範圍内，可獲得優異的黏附 性和可靠性。同時，在此範圍内，在125°C固化60分鐘及在15〇 °C固化30分鐘後的抗壓強度可為1 〇〇至15〇〇gf/mm2。 或者’除了上述單體外’（甲基）丙烯酸酯共聚物可選擇 性地包括含羥基的（甲基）丙烯酸酯單體。含羥基的（甲基）丙 烯酸酯單體的實例可包括，但不限於甲基丙烯酸_2_羥乙 酯、丙烯酸-2-羥乙酯、甲基丙烯酸-3-羥丙酯、丙烯酸_3_ 經丙酯、（甲基）丙稀酸經丙酯、丙稀酸_4_經丁酯、丙烯酸 N-(羥曱基）酯、甲基丙烯酸_3_氣_2_羥丙酯等。（甲基）丙烯 酸酯共聚物可包括5至35wt%，較佳為10至30wt%的含羥基 10 201231597 * 的（曱基）丙烯酸酯。在此範圍内，可獲得優異的黏附性和可 靠性。 上述黏結劑樹脂可具有_55至80°c的玻璃化轉變溫 度，較佳為5至60°C，且更佳為5至35°c。在此範圍内，可 確保咼流動性以實現優異的空隙消除性能，並可獲得黏附 性和可靠性。 (曱基）丙烯酸酯共聚物在25°c可具有1 〇〇〇至300000cps 的黏度。在此範圍内，可獲得優異的塗層成膜性。具體地， 黏度可為3000至l〇〇〇〇〇cps。 基於用於半導體的黏著劑組成物的總量 ，上述黏結劑 樹脂基於固含量的含量可為25至70wt%，較佳為36至 60wt%。在此範圍内，可獲得優異的可靠性和空隙消除效 果。 環氧樹脂 %軋樹脂起到固化和黏附作用，並可包括液體環氧樹 月曰、固體環氧樹脂和它們的混合物。 液體環氧柯脂的實例可包括，但不限於聯苯基環氧樹 月。曰、雙齡A液體環氧樹脂、雙盼F液體環氧樹脂、三官能團 1更多官能團液體環氧樹脂、橡膠改性的液體環氧樹脂、 聚氨0曰改性的液體環氧樹脂、丙稀酸改性的液體環氧樹脂 和光敏液體環氧樹脂，它們可單獨使用或以它們的組合使 用。具體地，可使用聯苯基環氧樹脂。 θ上述液體環氧樹脂可具有約100至約1500g/eq的環氧當 置’較佳為約150至約8〇〇g/eq，且更佳為約150至約 11 201231597 錢/eq。在此範圍内，固化後的產品能呈現優異的黏附性， 保持玻璃化轉變溫度，並具有優異的耐熱性。 此外，液體環氧樹脂可具有約1〇〇至1000g/m〇i的重均 分子里。在此範圍内’樹脂呈現出優異的流動性。 固體環氧樹脂可包括室溫下具有固相或接近固相並具 有至少-種官能團的任何環氧樹脂。具體地，可使用軟化 點(SP)為3G至lGGt：的環氧樹脂。固體環氧樹脂的實例可包 括聯苯基環氧樹脂、雙_環氧樹脂 ' 線型紛酸環氧樹脂、 鄰曱酚醛環氧樹脂、多官能團環氧樹脂、胺環氧樹脂、含 雜環的環氧樹脂、取代的環氧樹脂、萘酚環氧樹脂，及它 們的衍生物。 固體環氧樹脂的可商購產品包括以下產品。雙酚環氧 樹脂的實例包括：YD-017H、YD-020、YD020-L、YD-014、 YD-014ER、YD-013K、YD-019K、YD-019、YD-017R、 YD-017、YD-012、YD-011H、YD-011S、YD-011、YDF-2004、 YDF-2001(Kukdo Chemical有限公司）等。線型酚醛環氧樹 脂的實例包括：EPIKOTE 152和EPIKOTE 154(Yuka Shell Epoxy有限公司）；EPPN-201(Nippon Kayaku有限公司）； DN-483(陶氏化學公司）；YDPN-641、YDPN-638A80、 YDPN-638、YDPN-637、YDPN-644、YDPN-631(Kukdo Chemical有限公司）等。鄰曱酚醛環氧樹脂的實例包括： YDCN-500-1P、YDCN-500-2P、YDCN-500-4P、YDCN-500-5P、 YDCN-500-7P 、 YDCN-500-8P 、 YDCN-500-10P 、 YDCN-500-80P、YDCN-500-80PCA60、YDCN-500-80PBC60、 12 201231597 YDCN-500-90P、YDCN-500-90PA75 (Kukdo Chemical有限公 司）；EOCN-102S、EOCN-103S、EOCN-104S、EOCN-1012、 EOCN-1025 ' EOCN-1027 (Nippon Kayaku Co., Ltd.)； YDCN-701、YDCN-702、YDCN-703、YDCN-704(Tohto Kagaku有限公司）；Epiclon N-665-EXP (Dainippon Ink and Chemicals公司）等。雙酚酚醛環氧樹脂的實例包括： KBPN-110、KBPN-120、KBPN-115(Kukdo Chemical 有限 公司）等。多官能基環氧樹脂的實例包括：Epon 1031S(Yuka Shell Epoxy有限公司）；Araldite 0163(汽巴特殊化學品）； Detachol EX-611、Detachol EX-614、Detachol EX-614B ' Detachol EX-622、Detachol EX-512、Detachol EX-521、 Detachol EX-421 、 Detachol EX-411 、 Detachol EX-321(NAGA Celsius Temperature Kasei 有限公司）； EP-5200R、KD-1012、EP-5100R、KD-10U、KDT-4400A70、 KDT-4400、YH-434L、YH-434、YH-300(Kukdo Chemical 有限公司）等。胺環氧樹脂的實例包括：EPIKOTE 604(Yuka Shell Epoxy有限公司）；YH-434(Tohto Kagaku有限公司）； TETRAD-X 和 TETRAD-C(Mitsubishi Gas Chemical Company 公司）；ELM-120(Sumitomo Chemical Industry有限 公司）等。雜環環氧樹脂的實例包括PT-810汽巴特殊化學 品）。取代的環氧樹脂的實例包括：ERL-4234、ERL-4299、 ERL-422卜ERL-4206(UCC Co.，Ltd.)等。萘酚環氧樹月旨的 實例包括：Epiclon HP-4032、Epiclon HP-4032D、Epiclon HP-4700和 Epiclon HP-4701 (Dainippon Ink and Chemicals 公At least two of Rs, R9 and R10 include an amino group. The adhesive composition for the semiconductor is at 15 Torr. Curing under the armpits for 3 minutes 201231597 After the _ human circulation, there may be a first void (Vc) area ratio of less than 15% on the adhesive. The (meth) acrylate copolymer may have a viscosity of from 1000 to 300,000 cps at 25 °C. The (meth) acrylate copolymer may comprise from 1 to 20% by weight of (meth) acrylate glycidol. The content of the binder resin may be from 35 wt% to 70 wt% (in terms of solid content) based on the total amount of the adhesive composition for the semiconductor. The % oxygen resin may include a biphenyl group-containing epoxy resin. In a specific palladium case, the epoxy resin may include 3 to 100% by weight of the biphenyl-containing epoxy resin. The amine curing agent may include 0.5 to 50% by weight of the first amine curing agent and 50 to 99.5% by weight of the second amine curing agent. The weight ratio of the first amine curing agent to the second amine curing agent may be 1:1.1 to 1:1. The adhesive composition for a semiconductor is cured at 15 CTC for 30 minutes at 175°. After 60 seconds of EMC molding at C, there may be a second void (Vm) area ratio of less than 15% on the bond. The binder resin may be present in an amount greater than the total amount of the epoxy resin and the amine curing sword. The adhesive composition may further include a coating composition for the semiconductor, a binder resin of 25 to 7 〇wi%, and 5 to 35 wt% of the adhesive composition. Said the 虱刼 惫 虱刼 、,! To the amine curing agent of J5w, 0.01 to 5% by weight of the ceramide coupling agent and 10 to 201231597 1 55 wt% of the filler. Another cancer of the present month provides an adhesive film for a semiconductor formed of the adhesive composition. H-Bag Package] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Exemplary embodiments will be described in detail below. However, it should be understood that the following specific embodiments are provided by way of illustration only and are not to be construed as limiting. The scope of the invention is to be limited only by the scope of the appended claims and their equivalents. In the text, unless otherwise stated, the content of each component will be stated based on the solid content. The adhesive composition for a semiconductor according to an exemplary embodiment of the present invention has a compressive strength of 1 Torr to 1500 gf/mm 2 at 150 ° C after curing at 125 C for 30 minutes. As used herein, the term "compressive strength" refers to a laminate in which the adhesive composition is cured at 125 ° C for 30 minutes to form a laminate of 400 μm thick and pressed with ARES at 150 ° C, 0.1 mm/sec. The strength under the pressed distance. Specifically, the adhesive composition may have a compressive strength of 500 to 1200 gf/mm 2 , for example, 530 to 1000 gf/mm 2 . High compressive strength is advantageous for ensuring reliability in wire bonding. And effectively remove voids in EMC molding. When measuring compressive strength, curing at 125 ° C for 30 minutes is equivalent to curing at 150 ° C for 1 minute. The adhesive composition has less than 15% of the void after one cycle ( Vc) area ratio, preferably less than 11%, and more preferably less than 6%. Herein, the term "primary cycle curing" means placing the substrate/adhesive layer/substrate sample on a hot plate and allowing the adhesive layer to be at 150 °C curing 30 minutes of the process 201231597. 150 ° C and 30 minutes is the temperature and time required for wire bonding after wafer bonding. At this time, the gap generated in the program is defined as "the gap after one cycle (hereinafter Called Vc)" by using a microscope (magnification: χ 25) Image analysis of the adhesive layer cured under the above conditions, and the void area ratio (V c area ratio) is obtained by numerically indicating the void area ((V c area ratio = void area / total area xl) 〇〇) ^ When the area ratio (Vc) of the void is more than 15%, the reliability is deteriorated. Two samples can be produced as follows. The adhesive film of the present invention can be formed into a thickness of 50 to 60 μm, followed by 60 The substrate/adhesive layer/substrate sample was prepared by laminating between two iommxiomm slides at ° C. Or 'can be removed by isopropyl alcohol (IPA) by placing the ground wafer on a hot plate. The prepared adhesive film was prepared by mounting the prepared adhesive film on the glossy side of the wafer to prepare a PCB (or wafer)/adhesive layer/wafer sample. At this time, the mounter set the actual surface temperature at a temperature of 60 °C. The attached adhesive film and wafer are cut into a wafer of 10 mm×10 mm, and the wafer (adhesive + wafer) on which the adhesive of the present invention is formed on one side is attached to the substrate (adhesive + wafer) at 12 Å and lkgf/sec. Pre-processed PCB under the following conditions: PCB: 62mm single trigger PCB_ PCB baking: Ϊ́ϋ° (: 1 hour after baking in the furnace, the plasma is solidified in one cycle' and then after EM: 60 seconds after EMC molding for 60 seconds, a gap is formed between the PCB (or wafer) and the adhesive layer. At this time, in the program The resulting void is defined as "void after molding (Vm), and the void (Vm) is measured after curing and molding under the above conditions. The sample 201231597 is separated into individual units by singUiati〇n saw, and the PCB is removed. The Vm was measured and ground with a grinder to expose the adhesive layer of the adhesive film. At this time, the solder photoresist (SR) layer polished to the PCB is only slightly left translucent to facilitate observation of the void. After grinding, an image of the exposed adhesive layer was collected with a microscope (magnification: x25), and analyzed to determine the presence or absence of voids, and Vm was numerically represented. In order to numerically represent the void (Vm), the total area is divided into 10x10 regions, and the region having the void is calculated and expressed as a percentage (Vm area ratio = void area / total area χ 100). When the area ratio of vm is less than 10%, The adhesive combination of the invention was determined to be void elimination. When the area ratio of Vm is 10% or more, the adhesive composition of the present invention is determined not to eliminate voids. Excellent reliability is obtained when the area ratio of Vm is less than 10%', and wafer creep does not occur. The above adhesive composition for a semiconductor may include a binder resin, an epoxy resin, and an amine curing agent. Adhesive Resin The binder resin may include only a (meth) acrylate copolymer or a combination of a (mercapto) acrylate copolymer and other polymer resins. In a specific embodiment, the binder resin may be a (meth) acrylate copolymer. Specifically, the (meth) acrylate copolymer may include an epoxy group. In a specific embodiment, the (fluorenyl) acrylate copolymer may comprise a (fluorenyl) acrylate copolymer having an epoxy equivalent weight of from 500 to 10,000. Within this range, 'high viscosity can be exhibited before thermal curing, and the highly-adhesive 0 (mercapto) acrylate copolymer obtained after heat curing can have a 201231597 weight average molecular weight of 10,000 to 5,000,000 g/mol, preferably 50,000. To 1000000g/mol. Within this range, excellent coating film formability can be obtained. The above (fluorenyl) acrylate copolymer may be a copolymer of a (mercapto)acrylic acid group-based monomer and a (mercapto)acrylic acid glycidyl ester monomer. The (meth)acrylic acid alkyl ester monomer functions to impart viscosity to the film. The (meth)acrylic acid alkyl ester monomer may include, but is not limited to, methyl endogenous acid _2_ ethyl hexanoic acid, acrylic acid isooctyl vinegar, acrylic acid 2-ethyl hexanoic acid, ethyl internal acid ethyl ester, N-butyl acrylate, isobutyl acrylate, methacrylic acid, etc. The above (fluorenyl) acrylate copolymer may comprise 50 to 90% by weight, preferably 65 to 85% by weight, of an alkyl (meth) acrylate. Within this range, excellent adhesion and reliability are obtained. Examples of the glycidyl (meth)acrylate monomer may include, but are not limited to, glycidyl methacrylate, glycidyl acrylate, and the like. Specifically, the (meth) acrylate copolymer may include 1 to 20% by weight, preferably 3 to 8% by weight, of glycidyl (mercapto) acrylate. Within this range, excellent adhesion and reliability are obtained. Meanwhile, in this range, the compressive strength after curing at 125 ° C for 60 minutes and at 15 ° C for 30 minutes may be from 1 〇〇 to 15 〇〇 gf / mm 2 . Alternatively, the '(meth) acrylate copolymer other than the above monomers may optionally include a hydroxyl group-containing (meth) acrylate monomer. Examples of the hydroxyl group-containing (meth) acrylate monomer may include, but are not limited to, 2-hydroxyethyl methacrylate, 2-hydroxyethyl acrylate, 3-hydroxypropyl methacrylate, acrylic acid_3_ By propyl ester, (meth) acrylic acid by propyl ester, acrylic acid _4_ butyl acrylate, N-(hydroxyindenyl) acrylate, _3_ gas _2 hydroxypropyl methacrylate, and the like. The (meth) acrylate copolymer may comprise from 5 to 35 wt%, preferably from 10 to 30 wt% of (hydroxyl) acrylate containing hydroxyl group 10 201231597 *. Within this range, excellent adhesion and reliability can be obtained. The above binder resin may have a glass transition temperature of _55 to 80 ° C, preferably 5 to 60 ° C, and more preferably 5 to 35 ° C. Within this range, helium fluidity is ensured for excellent void elimination performance, and adhesion and reliability are obtained. The (fluorenyl) acrylate copolymer may have a viscosity of from 1 Torr to 300,000 cps at 25 °C. Within this range, excellent coating film formability can be obtained. Specifically, the viscosity may be from 3,000 to 1 〇〇〇〇〇 cps. The above binder resin may be contained in an amount of 25 to 70% by weight, based on the total amount of the adhesive composition for the semiconductor, preferably from 36 to 60% by weight. Within this range, excellent reliability and void elimination effects are obtained. Epoxy resin The % rolled resin acts as a curing and adhesion agent and may include liquid epoxy resin, solid epoxy resin, and mixtures thereof. Examples of liquid epoxy greases may include, but are not limited to, biphenyl epoxy resin.曰, two-year-old A liquid epoxy resin, double-hop F liquid epoxy resin, trifunctional group 1 more functional group liquid epoxy resin, rubber modified liquid epoxy resin, polyamine 0 曰 modified liquid epoxy resin, Acrylic acid modified liquid epoxy resin and photosensitive liquid epoxy resin, which may be used singly or in combination of them. Specifically, a biphenyl epoxy resin can be used. The above liquid epoxy resin may have an epoxy content of from about 100 to about 1500 g/eq, preferably from about 150 to about 8 g/eq, and more preferably from about 150 to about 11 201231597 money/eq. Within this range, the cured product exhibits excellent adhesion, maintains a glass transition temperature, and has excellent heat resistance. Further, the liquid epoxy resin may have a weight average molecular weight of about 1 Torr to 1000 g/m 〇i. Within this range, the resin exhibits excellent fluidity. The solid epoxy resin may include any epoxy resin having a solid phase or a near solid phase at room temperature and having at least one functional group. Specifically, an epoxy resin having a softening point (SP) of 3G to 1GGt: can be used. Examples of the solid epoxy resin may include a biphenyl epoxy resin, a double epoxy resin, a linear epoxy resin, an o-nonanol epoxy resin, a polyfunctional epoxy resin, an amine epoxy resin, and a heterocyclic ring-containing epoxy resin. Epoxy resin, substituted epoxy resin, naphthol epoxy resin, and derivatives thereof. Commercially available products of solid epoxy resins include the following products. Examples of the bisphenol epoxy resin include: YD-017H, YD-020, YD020-L, YD-014, YD-014ER, YD-013K, YD-019K, YD-019, YD-017R, YD-017, YD -012, YD-011H, YD-011S, YD-011, YDF-2004, YDF-2001 (Kukdo Chemical Co., Ltd.), and the like. Examples of novolac epoxy resins include: EPIKOTE 152 and EPIKOTE 154 (Yuka Shell Epoxy Co., Ltd.); EPPN-201 (Nippon Kayaku Co., Ltd.); DN-483 (Dow Chemical Co.); YDPN-641, YDPN-638A80, YDPN-638, YDPN-637, YDPN-644, YDPN-631 (Kukdo Chemical Co., Ltd.), and the like. Examples of the ortho-phenolic epoxy resin include: YDCN-500-1P, YDCN-500-2P, YDCN-500-4P, YDCN-500-5P, YDCN-500-7P, YDCN-500-8P, YDCN-500- 10P, YDCN-500-80P, YDCN-500-80PCA60, YDCN-500-80PBC60, 12 201231597 YDCN-500-90P, YDCN-500-90PA75 (Kukdo Chemical Co., Ltd.); EOCN-102S, EOCN-103S, EOCN- 104S, EOCN-1012, EOCN-1025 'EOCN-1027 (Nippon Kayaku Co., Ltd.); YDCN-701, YDCN-702, YDCN-703, YDCN-704 (Tohto Kagaku Co., Ltd.); Epiclon N-665- EXP (Dainippon Ink and Chemicals) and so on. Examples of the bisphenol novolac epoxy resin include: KBPN-110, KBPN-120, KBPN-115 (Kukdo Chemical Co., Ltd.) and the like. Examples of polyfunctional epoxy resins include: Epon 1031S (Yuka Shell Epoxy Co., Ltd.); Araldite 0163 (Ciba Specialty Chemicals); Detachol EX-611, Detachol EX-614, Detachol EX-614B 'Detachol EX-622, Detachol EX-512, Detachol EX-521, Detachol EX-421, Detachol EX-411, Detachol EX-321 (NAGA Celsius Temperature Kasei Co., Ltd.); EP-5200R, KD-1012, EP-5100R, KD-10U, KDT -4400A70, KDT-4400, YH-434L, YH-434, YH-300 (Kukdo Chemical Co., Ltd.), and the like. Examples of the amine epoxy resin include: EPIKOTE 604 (Yuka Shell Epoxy Co., Ltd.); YH-434 (Tohto Kagaku Co., Ltd.); TETRAD-X and TETRAD-C (Mitsubishi Gas Chemical Company); ELM-120 (Sumitomo Chemical Industry) Ltd.) and so on. Examples of heterocyclic epoxy resins include PT-810 Ciba Specialty Chemicals). Examples of the substituted epoxy resin include: ERL-4234, ERL-4299, ERL-422, ERL-4206 (UCC Co., Ltd.), and the like. Examples of naphthol epoxy trees include: Epiclon HP-4032, Epiclon HP-4032D, Epiclon HP-4700, and Epiclon HP-4701 (Dainippon Ink and Chemicals)

S 13 201231597 司）°這些環氧樹脂可單獨使用或以混合物使用。 具體地’環氧樹脂可包括1至50wt%，例如3至30wt%的 含聯苯基的環氧樹脂。在此範圍内，固化後的產品可呈現 出優異的黏附性並具有出色的耐熱性。 聯苯基環氧樹脂的實例包括YX_4〇〇〇H(日本Ep〇xy Resin 有限公司）、YSLV-120TE、GK-3207(NippOn Steel Chemical有限公司）和NC-3000(Nippon Kayaku有限公司）， 它們可單獨使用或以它們的組合使用。 基於黏著劑組成物在固含量上的總量，環氧樹脂的含 量可為約5至35wt%，較佳為約10至25加％。在此範圍内， 能確保優異的可靠性並能獲得空隙(Vc)消除效果。 具體地，上述黏結劑樹脂的量可大於環氧樹脂的量。 在一個具體實施例中，黏結劑樹脂與環氧樹脂之比可為1 2:工 至2 : 1。 ’、’、·· 固化劑 胺固化劑可為具有不同反應溫度範圍的兩種不同類型 的胺固化劑。即，第一胺固化劑和第二胺固化劑。 第胺固化劑可為由通式1表示的芳族二胺： [通式1]S 13 201231597 Division) ° These epoxy resins can be used alone or in a mixture. Specifically, the epoxy resin may include 1 to 50% by weight, for example, 3 to 30% by weight of a biphenyl-containing epoxy resin. Within this range, the cured product exhibits excellent adhesion and excellent heat resistance. Examples of the biphenyl epoxy resin include YX_4〇〇〇H (Japan Ep〇xy Resin Co., Ltd.), YSLV-120TE, GK-3207 (NippOn Steel Chemical Co., Ltd.), and NC-3000 (Nippon Kayaku Co., Ltd.), which are They can be used alone or in combination of them. The epoxy resin may be included in an amount of from about 5 to 35 % by weight, based on the total amount of the adhesive composition on the solid content, preferably from about 10 to 25 % by weight. Within this range, excellent reliability can be ensured and void (Vc) elimination effect can be obtained. Specifically, the amount of the above binder resin may be greater than the amount of the epoxy resin. In one embodiment, the ratio of binder resin to epoxy resin can range from 1 2 to 2:1. ', ', ··· Curing Agent The amine curing agent can be two different types of amine curing agents having different reaction temperature ranges. That is, the first amine curing agent and the second amine curing agent. The amine curing agent may be an aromatic diamine represented by Formula 1: [Formula 1]

其中A表示C1至C6直鏈或支鏈的伸烷基，R、 1 K2、R3 14 201231597 R4、R5、R6、r7、R8、R^oRi。各自獨立地表示氫、C^C4 院基、Cl至C4烷氧基、或氨基，且Ri、r2、&amp;、r4、R5、 R6、R7、、R9和尺1()_的至少兩個包括氨基。Wherein A represents a C1 to C6 straight or branched alkylene group, R, 1 K2, R3 14 201231597 R4, R5, R6, r7, R8, R^oRi. Each independently represents hydrogen, C^C4, Ke to C4 alkoxy, or amino, and at least two of Ri, r2, &amp;, r4, R5, R6, R7, R9, and Ruler 1) Includes amino groups.

Ri、、R3、R4、R5、r6、r7、r8、R#Rl〇可為同一 個裱中相同或不同的取代基。第一胺固化劑可具有對稱結 構或不對稱結構，較佳為對稱結構。 第一胺固化劑的實例包括4,4，-二氨基-3,3，-二曱基二 笨基曱烷、4,4、二氨基-3,3，,5,5’-四正丙基二苯基甲烷、4,4，-二氨基-3,3’，5,5’-四甲基二苯基曱烷、4,4，·二氨基_3,3’，5,5，-四異丙基二苯基曱烷、4,4，-二氨基-3,3，，5,5，-四乙基二苯基 曱烷' 4,4’-二氦基-3,3，-二曱基-5,5，-二乙基二苯基甲烷、 4,4’-二氨基-3,3’-二甲基-5,5，-二異丙基二苯基曱烷、4,4’-二氨基-3,3’-二乙基-5,5’-二乙基二苯基甲烷、4,4，-二氨基 -3,5’-二曱基-3’,5’-二乙基二苯基甲烷、4,4’-二氨基-3,5-二 甲基-3’,5’-二異丙基二苯基甲烷、4,4’-二氨基-3,5-二乙基 -3’，5’-二丁基二苯基曱烷、4,4’-二氨基-3,5-二異丙基-3’，5’-二丁基二笨基甲烷、4,4’-二氨基-3,3’-二異丙基-5,5’-二丁基 二苯基甲烷、4,4’-二氨基-3,3’-二甲基-5’,5’-二丁基二苯基 曱烷、4,4’-二氨基-3,3’-二乙基-5’，5’-二丁基二苯基曱烷、 4,4’-二氨基-3,3’-二甲基二苯基甲烷、4,4’-二氨基-3,3’-二乙 基二苯基甲烷、4,4’-二氨基-3,3’-二正丙基二苯基曱烷、 4,4’-二氨基-3,3’-二異丙基二苯基甲烷、4,4’-二氨基-3,3’-二丁基二笨基曱烷、4,4’-二氨基-3,3’,5-三甲基二苯基曱 烷、4,4’-二氨基-3,3’，5-三乙基二苯基甲烷、4,4’-二氨基Ri, R3, R4, R5, r6, r7, r8, R#Rl〇 may be the same or different substituents in the same oxime. The first amine curing agent may have a symmetrical structure or an asymmetric structure, preferably a symmetrical structure. Examples of the first amine curing agent include 4,4,-diamino-3,3,-diindenyl diphenyl decane, 4,4, diamino-3,3,5,5'-tetra-n-propyl Diphenylmethane, 4,4,-diamino-3,3',5,5'-tetramethyldiphenylnonane, 4,4,diamino-3,3',5,5, -tetraisopropyldiphenyldecane, 4,4,-diamino-3,3,5,5,-tetraethyldiphenylnonane' 4,4'-dimercapto-3,3 ,-Dimercapto-5,5,-diethyldiphenylmethane, 4,4'-diamino-3,3'-dimethyl-5,5,-diisopropyldiphenylnonane 4,4'-Diamino-3,3'-diethyl-5,5'-diethyldiphenylmethane, 4,4,-diamino-3,5'-diindolyl-3' , 5'-diethyldiphenylmethane, 4,4'-diamino-3,5-dimethyl-3',5'-diisopropyldiphenylmethane, 4,4'-diamino -3,5-diethyl-3',5'-dibutyldiphenylnonane, 4,4'-diamino-3,5-diisopropyl-3',5'-dibutyl Di-methane, 4,4'-diamino-3,3'-diisopropyl-5,5'-dibutyldiphenylmethane, 4,4'-diamino-3,3'-di Methyl-5',5'-dibutyldiphenylnonane, 4,4'-diamino-3,3'-diethyl -5',5'-dibutyldiphenylnonane, 4,4'-diamino-3,3'-dimethyldiphenylmethane, 4,4'-diamino-3,3'- Diethyldiphenylmethane, 4,4'-diamino-3,3'-di-n-propyldiphenylnonane, 4,4'-diamino-3,3'-diisopropyldiphenyl Methane, 4,4'-diamino-3,3'-dibutyldiphenyl decane, 4,4'-diamino-3,3',5-trimethyldiphenyl decane, 4 , 4'-diamino-3,3',5-triethyldiphenylmethane, 4,4'-diamino

S 15 201231597 -3,3’，5-三正丙基二苯基曱烷、4,4’-二氨基-3,3’,5-三異丙基 二苯基甲烷、4,4’-二氨基-3,3’，5-三丁基二苯基甲烷、4,4’-二氨基-3-曱基-3’-乙基二苯基甲烷、4,4’-二氨基-3-甲基-3’-異丙基二苯基曱烷、4,4’-二氨基-3-甲基-3’-丁基二苯基曱 烷、4,4’-二氨基-3-異丙基-3’-丁基二苯基甲烷、2,2-雙(4-氨基-3,5-二曱基苯基)丙烷、2,2-雙(4-氨基-3,5-二乙基苯基) 丙烷、2,2-雙(4-氨基-3,5-二正丙基苯基）丙烷、2,2-雙(4-氨 基-3,5-二異丙基苯基）丙烷、2,2-雙(4-氨基-3,5-二丁基苯基) 丙烷及其類似物。在這些第一胺固化劑中，較佳可使用4,4’-二氨基-3,3’-二曱基二苯基甲烷、4,4’-二氨基-3,3’，5,5-四曱 基二苯基曱烷和4,4’-二氨基-3,3’，5,5’-四乙基二苯基曱烷。 第二胺固化劑可為由通式2表示的芳族二胺： [通式2]S 15 201231597 -3,3',5-tri-n-propyldiphenylnonane, 4,4'-diamino-3,3',5-triisopropyldiphenylmethane, 4,4'- Diamino-3,3',5-tributyldiphenylmethane, 4,4'-diamino-3-indolyl-3'-ethyldiphenylmethane, 4,4'-diamino-3 -Methyl-3'-isopropyldiphenylnonane, 4,4'-diamino-3-methyl-3'-butyldiphenylnonane, 4,4'-diamino-3- Isopropyl-3'-butyldiphenylmethane, 2,2-bis(4-amino-3,5-dianonylphenyl)propane, 2,2-bis(4-amino-3,5- Diethylphenyl)propane, 2,2-bis(4-amino-3,5-di-n-propylphenyl)propane, 2,2-bis(4-amino-3,5-diisopropylbenzene Propyl, 2,2-bis(4-amino-3,5-dibutylphenyl)propane and the like. Among these first amine curing agents, 4,4'-diamino-3,3'-dimercaptodiphenylmethane, 4,4'-diamino-3,3',5,5 is preferably used. - Tetradecyldiphenylnonane and 4,4'-diamino-3,3',5,5'-tetraethyldiphenylnonane. The second amine curing agent may be an aromatic diamine represented by Formula 2: [Formula 2]

其中 B 表示-S〇2- ' -NHCO-或-0-，Ri、R2、R3、Κ·4、 R5、Re、R7、R8、Κ·9和Rig各自獨立地表示氫、Cl至C4院基、 C1 至C4烷氧基、或氨基，且R]、R2、R3、R4、R5、R6、R7、 Rg、R9和Rio中的至少兩個包括氣基。 第二胺固化劑的實例可包括4,4’-二氨基二苯基砜、 3,3’-二氨基二苯基砜、4,4’-二氨基-3,3’,5,5’-四曱基二苯基 颯、4,4’-二氨基-3,3’,5,5’-四乙基二苯基颯、4,4’-二氨基 16 201231597 - -3,3’，5,5’-四正丙基二苯基砜、4,4’-二氨基-3,3’,5,5’-四異丙 基二苯基砜及其類似物。具體地，可使用4,4’-二氨基二苯 基石風。 上述胺固化劑可包括0.5至50wt%的第一胺固化劑和50 至99.5wt%的第二胺固化劑。 在一個具體實施例中，第一胺固化劑與第二胺固化劑 的重量比可為1 : 1至1 : 100。在此範圍内，可獲得優異的 穩定性。具體地，上述比例可為1 ·· 1.5至1 : 85。 基於黏著劑組成物在固含量上的總量，上述胺固化劑 的含量可為1至15wt%，較佳為3至10wt%。在此範圍内，可 獲得空隙(Vc)減少效果。 矽烷偶聯劑 • 石夕烧偶聯劑作為由於有機材料和無機材料如填料間的 化學鍵合起到用於改善黏結強度的黏附增強劑。 可使用本領域的任何矽烷偶聯劑，例如，含環氧基的 矽烷偶聯劑，如2-(3,4-環氧環己基)-乙基三甲氧基矽烷、3-縮水甘油醚氧基三曱氧基石夕炫和3-縮水甘油醚氧基丙基三 乙氧基石夕院；含氨基的石夕烧偶聯劑’如N-2-(氨基乙基)-3-氨基丙基甲基二甲氧基矽烷、N-2-(氨基乙基)-3-氨基丙基 三甲氧基矽烷、N-2-(氨基乙基）-3-氨基丙基三乙氧基矽 烷、3-氨基丙基三甲氧基矽烷、3-氨基丙基三乙氧基矽烷、 3-三乙氧基甲矽烷基-N-(l,3-二甲基亞丁基）丙胺' N-苯基 -3-氨基丙基三甲氧基矽烷；含毓基的矽烷偶聯劑，如3-酼 丙基曱基二曱氧基矽烷和3-酼丙基三乙氧基矽烷；和含異 17 201231597 氛酸酯基的矽烷偶聯劑’如3_異氰酸酯基丙基三乙氧基矽 炫匕們可單獨使用或以它們的組合使用。 旦基於黏著劑組成物在固含量上的總量，上述偶聯劑的 含量可為約0.01至5wt%，較佳為〇⑴糾％，且更佳 至Μ。在此範圍内，可獲得優異的結合可靠性，並可抑 制氣泡問題。 填料 上述黏著劑組成物可進一步包括填料。 填料的實例可包括粉末形式的金屬，如金、銀、銅和 錄；和非金屬’如氧她、氫氧德 '氫氧化鎂、碳酸約、 碳酸鎂、魏約、㈣鎂、氧倾、氧化鎂、氮化紹、二 氧化石夕、鼠化棚、二氧化鈦、玻璃、鐵素體、陶究等。呈 體地，二氧化矽可用作上述填料。 〃 …儘管上述填料在靴和尺寸上沒有特別限制，該填料 通常為球形二氧化朴無㈣二氧切並可具有$酿至 綠黏者顯成物在固含量上的、m㈣料的含 量可為約1G至55wt%，較佳為約iu45wt%，且更佳為2〇 至40wt%。在此範圍内，可婼《曰值 T獲付優異的流動性、成膜性和 黏附性。 溶劑 甲笨、丙 黏著劑組成物可進一步包括溶劑。溶劑用於降低用於 半導體的黏著劑組成物的錢，並促進成膜。上述溶的 實例可包括，但不限於有機溶劑，如甲笨、 片的 18 201231597 醇單曱醚乙酸s旨、苯、丙酮、曱乙嗣、四氣咬喃、二甲亞 石風、環己酮等。 本發明的另-態樣提供-種由上述黏著劑組成物形成 的用於半導體的黏著劑膜。用本發明的黏著劑組成物製造 用於半導體組裝的黏著賴無需特殊的裝置或設備。可用 本領域公知的任何料减上_於半導脸裝的黏著劑 $例如’將各組份溶解於溶劑巾，朗球磨機充分混合， Ik後用塗佈器將该混合物塗佈至離型處理過的聚對苯二甲 酸乙二醇醋（PET)膜並在10(rc的爐中熱乾燥1〇至3〇分鐘， 從而製得具有適宜厚度的黏著劑膜。 在一個具體實施例中，用於半導體的黏著劑膜可由依 次置放的基膜、壓敏黏著劑層、黏結層和保護膜構成。 上述黏著劑膜可具有5至200μιη的厚度，較佳為1〇至 ΙΟΟμιη。在此範圍内時，可獲得充分的黏結強度和成本效 率之間的平衡。具體地，該厚度可為^至⑹#^。 用根據本發明的黏著劑組成物製造的黏著劑層和黏著 劑膜可縮短或消除黏合相同類型晶片之後的半固化程序， 並最小化空隙（Vc和Vm)產生。 下文中’將參照以下實施例更詳細地解釋本發明。提 供這些實施例僅用於說明的目的並不以任何方式理解成限 制本發明。 實施例 實施例和對比例中所用組分的細節說明如下。 (A1)黏結劑樹脂：SG-P3(NagaseChemtex)Wherein B represents -S〇2- '-NHCO- or -0-, and Ri, R2, R3, Κ·4, R5, Re, R7, R8, Κ·9 and Rig each independently represent hydrogen, Cl to C4 a group, a C1 to C4 alkoxy group, or an amino group, and at least two of R], R2, R3, R4, R5, R6, R7, Rg, R9 and Rio include a gas group. Examples of the second amine curing agent may include 4,4'-diaminodiphenyl sulfone, 3,3'-diaminodiphenyl sulfone, 4,4'-diamino-3,3', 5,5' - tetradecyldiphenylphosphonium, 4,4'-diamino-3,3',5,5'-tetraethyldiphenylphosphonium, 4,4'-diamino-16 201231597 - -3,3' , 5,5'-tetra-n-propyldiphenyl sulfone, 4,4'-diamino-3,3',5,5'-tetraisopropyldiphenyl sulfone and the like. Specifically, 4,4'-diaminodiphenyl stone wind can be used. The above amine curing agent may include 0.5 to 50% by weight of the first amine curing agent and 50 to 99.5% by weight of the second amine curing agent. In a specific embodiment, the weight ratio of the first amine curing agent to the second amine curing agent may range from 1:1 to 1:100. Within this range, excellent stability can be obtained. Specifically, the above ratio may be 1 ·· 1.5 to 1:85. The content of the above amine curing agent may be from 1 to 15% by weight, preferably from 3 to 10% by weight, based on the total amount of the adhesive composition on the solid content. Within this range, a void (Vc) reduction effect can be obtained.矽Case coupling agent • Shixi burning coupling agent acts as an adhesion enhancer for improving the bonding strength due to chemical bonding between organic materials and inorganic materials such as fillers. Any decane coupling agent in the art can be used, for example, an epoxy-containing decane coupling agent such as 2-(3,4-epoxycyclohexyl)-ethyltrimethoxydecane, 3-glycidyloxyl Alkyl methoxyxanthine and 3-glycidyloxypropyl triethoxy zexiyuan; amino-containing shixi burning coupling agent such as N-2-(aminoethyl)-3-aminopropyl Methyldimethoxydecane, N-2-(aminoethyl)-3-aminopropyltrimethoxydecane, N-2-(aminoethyl)-3-aminopropyltriethoxydecane, 3 -aminopropyltrimethoxydecane, 3-aminopropyltriethoxydecane, 3-triethoxymethylidene-N-(l,3-dimethylbutylidene)propylamine 'N-phenyl- 3-aminopropyltrimethoxydecane; a decyl-containing decane coupling agent such as 3-mercaptopropyl decyloxydecane and 3-mercaptopropyltriethoxy decane; and a heterologous 17 201231597 The acid ester-based decane coupling agent such as 3-isocyanatepropyltriethoxy fluorene may be used singly or in combination of them. The content of the above coupling agent may be from about 0.01 to 5% by weight based on the total amount of the adhesive composition on the solid content, preferably 〇(1)%, and more preferably Μ. Within this range, excellent bonding reliability can be obtained, and the bubble problem can be suppressed. Filler The above adhesive composition may further comprise a filler. Examples of the filler may include metals in powder form such as gold, silver, copper, and ruthenium; and non-metals such as oxygen, hydroxyhydrogen's magnesium hydroxide, carbonic acid, magnesium carbonate, Wei, magnesium, oxygen, Magnesium oxide, nitriding, sulphur dioxide, sputum, titanium dioxide, glass, ferrite, ceramics, etc. Specifically, cerium oxide can be used as the above filler. 〃 ... Although the above filler is not particularly limited in terms of the size of the boot and the size, the filler is usually spherical bismuth pentoxide (tetra) dioxin and can have a content of m (four) in the solid content of the green viscous product. It is about 1G to 55wt%, preferably about iu45wt%, and more preferably 2〇 to 40wt%. Within this range, 曰 T T is excellent in fluidity, film formation and adhesion. The solvent methyl ester and the acrylic adhesive composition may further include a solvent. Solvents are used to reduce the cost of the adhesive composition for semiconductors and to promote film formation. Examples of the above-mentioned solution may include, but are not limited to, an organic solvent, such as a tablet, a tablet of 18 201231597, an alcohol monoterpene ether acetate, a benzene, an acetone, an anthraquinone, a tetradentate, a dimethyl sulphide, a cyclohexane. Ketones, etc. Another aspect of the present invention provides an adhesive film for a semiconductor formed of the above adhesive composition. The adhesion of the adhesive composition of the present invention for semiconductor assembly does not require special equipment or equipment. Any of the materials known in the art can be used to reduce the amount of adhesive to the semi-conductive face. For example, the components are dissolved in a solvent towel, the ball mill is thoroughly mixed, and the mixture is coated with a coater to a release treatment after Ik. The polyethylene terephthalate (PET) film was passed and thermally dried in a 10 (rc oven) for 1 to 3 minutes to obtain an adhesive film having a suitable thickness. In a specific embodiment, The adhesive film for a semiconductor may be composed of a base film, a pressure-sensitive adhesive layer, a bonding layer, and a protective film which are sequentially placed. The above adhesive film may have a thickness of 5 to 200 μm, preferably 1 to ΙΟΟμηη. In the range, a sufficient balance between the bonding strength and the cost efficiency can be obtained. Specifically, the thickness can be from ^ to (6) #^. The adhesive layer and the adhesive film produced by the adhesive composition according to the present invention can be used. Shortening or eliminating the semi-cure procedure after bonding the same type of wafer, and minimizing the generation of voids (Vc and Vm). The invention will be explained in more detail below with reference to the following examples. These examples are provided for illustrative purposes only and Not in office The manner in which it is understood is to limit the invention. EXAMPLES The details of the components used in the examples and comparative examples are as follows: (A1) Adhesive resin: SG-P3 (NagaseChemtex)

S 19 201231597 (A2)黏結劑樹脂：SBR 1000(Emulsion Styrene Butadiene Rubber, Kumho Petrochemical) (Bl)環氧樹脂：YDCN-500-lP(Kukdo Chemical) (B2)環氧樹脂：NC-3000(Nippon Kayaku) (Cl)胺固化劑：C-300S(NipponKayaku，當量：78) (C2)胺固化劑：DDS(Wako，當量：67) (D) 矽烷偶聯劑：KBM-403(Shinetsu) (E) 填料：SO-25H(ADMATECH) (F) 溶劑：環己酮S 19 201231597 (A2) Adhesive resin: SBR 1000 (Emulsion Styrene Butadiene Rubber, Kumho Petrochemical) (Bl) Epoxy resin: YDCN-500-lP (Kukdo Chemical) (B2) Epoxy resin: NC-3000 (Nippon Kayaku (Cl) Amine curing agent: C-300S (NipponKayaku, equivalent: 78) (C2) Amine curing agent: DDS (Wako, equivalent: 67) (D) decane coupling agent: KBM-403 (Shinetsu) (E) Filler: SO-25H (ADMATECH) (F) Solvent: cyclohexanone

表1(固含量) 實施例1 實施例2 實施例3 實施例4 (A1) 36.5 36.5 36.5 60 (B1) 0 0 10 0 (B2) 20 20 10 12.6 (C1) 0.1 5 5 3.15 (C2) 9.9 5 5 3.15 _ (〇) 0.5 0.5 0.5 0.3 (E) 33 33 33 20.8 表2(固含量) 對比例 1 2 3 4 5 6 -7 (A1) 36.5 36.5 16 16 60 60 0 (A2) 0 0 0 0 0 0 36.5 (B1) 0 0 0 0 0 0 10 (B2) 20 20 26.5 26.5 12.6 12.6 10 (C1) 0 10 0 13.2 0 6.3 5 (C2) 10 0 13.2 0 6.3 0 5 (D) 0.5 0.5 0.7 0.7 0.3 0.3 0.5 (E) 33 33 43.6 43.6 20.8 20.8 33 20 201231597 - 黏著劑膜的製備 向作為溶劑（I)的環己酮添加表1和表2中所列各組份， 該溶液具有40%的固含量，並用球磨機充分混合，然後用 塗佈器將該混合物塗佈至離型處理過的PET膜上，並在100°C 的爐中熱乾燥10至30分鐘，從而製得厚度為60μπι的黏著 劑膜。 對實施例1至4和對比例1至7中製造的黏著劑膜進行如 下測試，結果示於表5和表6中。 (1) 抗壓強度 將各黏著劑組成物形成厚度為400μπι的層壓體，該層 壓體置於離型處理過的PET膜之間並在125Τ：的爐中固化 30分鐘。然後’用ARES在150和O.lmm/sec下壓制該產物， ' 並測定0.05mm的壓制距離下的強度。 (2) Vm面積比 將研磨過的晶圓置於貼片機熱板上，用異丙醇(IpA)去 除雜質，並將製得的各黏著劑膜貼裝在晶圓的光面上。此 時，貼片機設定溫度為60°C的實際表面溫度。然後，將黏 著劑膜和晶圓切成1 Ommx 1 〇mm的晶片，並將本發明黏著劑 形成在一面上的晶片（黏著劑+晶片）在i20〇c和lkgf/sec下貼 附至在表3所列的條件下進行預處理的PCB，從而製得樣品。 表3 62mm單觸發 pcr__ 的爐中1小時' 將上述樣品在150°C的熱板上進行約3〇分鐘的—次循Table 1 (solid content) Example 1 Example 2 Example 3 Example 4 (A1) 36.5 36.5 36.5 60 (B1) 0 0 10 0 (B2) 20 20 10 12.6 (C1) 0.1 5 5 3.15 (C2) 9.9 5 5 3.15 _ (〇) 0.5 0.5 0.5 0.3 (E) 33 33 33 20.8 Table 2 (solid content) Comparative Example 1 2 3 4 5 6 -7 (A1) 36.5 36.5 16 16 60 60 0 (A2) 0 0 0 0 0 0 36.5 (B1) 0 0 0 0 0 0 10 (B2) 20 20 26.5 26.5 12.6 12.6 10 (C1) 0 10 0 13.2 0 6.3 5 (C2) 10 0 13.2 0 6.3 0 5 (D) 0.5 0.5 0.7 0.7 0.3 0.3 0.5 (E) 33 33 43.6 43.6 20.8 20.8 33 20 201231597 - Preparation of Adhesive Film The components listed in Tables 1 and 2 were added to cyclohexanone as solvent (I), and the solution had 40%. The solid content is thoroughly mixed with a ball mill, and then the mixture is applied to the release-treated PET film by an applicator, and thermally dried in an oven at 100 ° C for 10 to 30 minutes to obtain a thickness of 60 μm. Adhesive film. The adhesive films produced in Examples 1 to 4 and Comparative Examples 1 to 7 were tested as follows, and the results are shown in Tables 5 and 6. (1) Compressive strength Each of the adhesive compositions was formed into a laminate having a thickness of 400 μm, which was placed between release-treated PET films and cured in a 125 Torr: oven for 30 minutes. Then, the product was pressed with ARES at 150 and 0.1 mm/sec, and the strength at a pressing distance of 0.05 mm was measured. (2) Vm area ratio The ground wafer was placed on a hot plate of a mounter, and impurities were removed with isopropyl alcohol (IpA), and the obtained adhesive films were mounted on the glossy surface of the wafer. At this time, the placement machine sets the actual surface temperature at 60 °C. Then, the adhesive film and the wafer are cut into a wafer of 1 Omm x 1 〇 mm, and the wafer (adhesive + wafer) on which the adhesive of the present invention is formed is attached to i20〇c and lkgf/sec. The pretreated PCB was prepared under the conditions listed in Table 3 to prepare a sample. Table 3: 1 hour in a furnace with a 62 mm single trigger pcr__' The above sample was subjected to a hot plate at 150 ° C for about 3 minutes.

S 21 201231597 環固化’然後在表4所列條件下進行EMC成型，隨後測定空隙。 表4 成型溫度 夹具壓力 壓鑄(transfer)壓力 壓鑄時間 固化時間 175eC 30嘴 1.1噸 18秒 60秒 ! · EMC SG-8500BC，第一毛織 然後’用分割鋸將上述樣品分成單個單元，去除PCB 以測量Vm’並用研磨機研磨以暴露黏著劑膜的黏著劑層。 此時’研磨至PCB的焊料光刻膠(SR)層僅少量殘留為半透 明以便於觀察空隙。 研磨後’用顯微鏡(放大倍數：x25)採集暴露的黏著劑 層的圖像’並分析確定是否存在空隙。為了用數值表示空 隙’使用網格計數法。也就是說，將總面積分成10x10個區 域’並對具有空隙的區域計數並表示為百分比（Vm面積 比）。當Vm比小於10%時，確定為空隙消除。當vm比為10% 或更高時，確定為空隙未消除。S 21 201231597 Ring cure' Then EMC molding was carried out under the conditions listed in Table 4, followed by measurement of voids. Table 4 Forming temperature clamp pressure die casting (transfer) pressure die casting time curing time 175eC 30 mouth 1.1 tons 18 seconds 60 seconds! · EMC SG-8500BC, first weaving then 'divided the above sample into a single unit with a split saw, remove the PCB to measure Vm' was ground with a grinder to expose the adhesive layer of the adhesive film. At this time, only a small amount of the solder resist (SR) layer ground to the PCB remains semi-transparent to facilitate observation of the void. After grinding, an image of the exposed adhesive layer was taken with a microscope (magnification: x25) and analyzed to determine whether or not voids were present. In order to represent the gap by numerical value, the grid counting method is used. That is, the total area is divided into 10 x 10 areas' and the area having the gap is counted and expressed as a percentage (Vm area ratio). When the Vm ratio is less than 10%, it is determined to be void elimination. When the vm ratio is 10% or more, it is determined that the void is not eliminated.

Vm面積比=空隙面積/總面積χ1〇〇 (3) Vc面積比 將各黏著劑組成物形成為5〇s6〇(im厚，使溶劑殘留少 於1%，隨後在6(TC下層壓在兩塊1〇mmxl〇mm的載玻片之 間，並在150 C的熱板上固化3〇分鐘。用顯微鏡(放大倍數： x25)M黏著繼的圖像，並分析以用數值表示相對於總 測量面積的空隙面積。Vm area ratio = void area / total area χ 1 〇〇 (3) Vc area ratio The adhesive composition is formed to be 5 〇 s6 〇 (im thick, so that the solvent residue is less than 1%, and then laminated at 6 (TC) Between two slides of 1〇mmxl〇mm and cured on a 150 C hot plate for 3 。 minutes. Attach the image with a microscope (magnification: x25) M and analyze it to represent the value relative to The void area of the total measured area.

Vc面積比=空隙面積/總面積χ励 (4) 一次循環並成型後的晶片蠕變 以與上述測量方法⑵相同的方法製作各樣品，並進行 22 201231597 EMC成型，隨後用掃描超聲波顯微鏡(SAT)檢查是否發生蠕 變。當樣品從初始貼附位置移動或更多時，判定為螺變。 (5) 晶片剪切強度 將530μπι厚的塗有二氧化物膜的晶圓切成5mmx5mm 的晶片。在60°C將這些晶片與各黏著劑膜層壓。切割該層 塵體僅留下接合部份。通過在12〇。〇的熱板上施加lkgf的力 1秒鐘，隨後通過由在125。(：的爐中固化60分鐘、在15(TC的 熱板上固化30分鐘，然後在i75°C固化2小時組成的固化程 序，將5mmx5mm的上晶片貼附至lOmmxlOmm的合金42引 線框。將該樣品在85°C/85%RH吸濕168小時，並在260°C的 最高溫度下進行三次回流。然後，用DSS設備(DAGE4000) 在250°C下測定晶片剪切強度。 (6) 耐回流性測試 用與測試步驟(2)相同的方法製備各樣品，並進行EMC 成型和固化（在175 °C的爐中2小時）。將該樣品在85 °C /85%RH吸濕168小時，並在260°C的最高溫度下進行三次回 流，然後觀察樣品以檢查是否出現裂縫。 表5 實施例1 實施例2 實施例3 實施例4 Vc面積比（％) 14.9 10.2 11.5 5.6 抗壓强度(gf/mm2) 530 900 1000 800 Vm 消除 消除 消除 消除 一次循環並成型後的晶片蠕變 無蠕變 無螺變 無蠕變 無蠕變 回流後的晶片剪切強度(kgf/晶片） 12 14.3 20.1 15.2 耐回流測試（裂縫出現） 無裂缝 無裂缝 無裂缝 無裂缝Vc area ratio = void area / total area excitation (4) Wafer creep after one cycle and molding The respective samples were produced in the same manner as the above measurement method (2), and subjected to 22 201231597 EMC molding, followed by scanning ultrasonic microscope (SAT) Check for creep. When the sample moves from the initial attachment position or more, it is determined to be a screw. (5) Wafer Shear Strength A 530 μm thick wafer coated with a dioxide film was cut into 5 mm x 5 mm wafers. These wafers were laminated with each adhesive film at 60 °C. Cutting the layer of dust only leaves the joint. Pass at 12 〇. Apply a force of lkgf to the hot plate for 1 second, followed by a pass at 125. (: The oven was cured for 60 minutes, cured on a 15 TC hot plate for 30 minutes, then cured at i75 ° C for 2 hours, and a 5 mm x 5 mm upper wafer was attached to a 10 mm x 10 mm alloy 42 lead frame. The sample was incubated for 168 hours at 85 ° C / 85% RH and refluxed three times at the highest temperature of 260 ° C. Then, the wafer shear strength was measured at 250 ° C using a DSS apparatus (DAGE 4000). Reflow Resistance Test Each sample was prepared in the same manner as in Test Procedure (2) and subjected to EMC molding and curing (2 hours in a furnace at 175 ° C). The sample was hygroscopic at 85 ° C / 85% RH 168 Hour and reflux were performed three times at the highest temperature of 260 ° C, and then the sample was observed to check for cracks. Table 5 Example 1 Example 2 Example 3 Example 4 Vc area ratio (%) 14.9 10.2 11.5 5.6 Compression Strength (gf/mm2) 530 900 1000 800 Vm Elimination Elimination Elimination of one cycle and wafer creep after molding No creep, no creep, no creep, creep stress after creep reflow (kgf/wafer) 12 14.3 20.1 15.2 Resistance to backflow test (crack occurrence) No cracks, no cracks No cracks no cracks

S 23 201231597 * 一 30^2環半固化在15〇°C的爐中固化10分鐘並在150°c的熱板上固化 表6 對比例 1 2 3 4 5 6 7 Vc面積比（％) 22.5 9.8 45.3 6.7 16.2 8.7 23 抗壓强度(gf/mm ) 50 40 —.——— 一 20 35 10 1800 2000 Vm 未消除 未消除 消除 未消除 消除 未消除 未消除 一次循環並成型後的晶 片蠕變 發生蠕變 無蠕變 發生蠕變 無螺變 發生蠕變 無蠕變 無蠕變 回流後的晶粒剪切強度 (kgf/晶片） 4.3 14.1 6.6 16.2 5.2 15.2 20.1 耐回流測試 (裂縫出現） 裂縫出現 無裂縫 無裂·縫 裂縫出現 無裂缝 裂缝出現 無裂縫 如表5和表6所示，根據實施例1至4的黏著劑膜具有1〇〇 至15〇〇gf/mm2的抗壓強度，且成型後消除了空隙。同時， 根據對比例1、3和7的黏著劑膜具有非常高的Vc面積比，但 根據對比例1雜著_具有彳目當低的抗㈣度，錄據對 比例6和7的黏著劑膜具有非常高的抗&gt;1強度。根據對比例 卜2、4、6和7_著劑膜中的空隙在成型後未被消除。 儘管文中已公開了 一也息〜 ~/、體貫施例，應理解的是僅以 說明的方式提供這些具體實称 ^ M歹丨J ’並能進行各種修改、變 更和置換而不背離本發明的私 十 月钟和範圍。因此，本發明的 關應㈣賴範h料效讀限定。 【圖簡明】 八 (無） 【主要元件符號說明】 (無） 24S 23 201231597 * A 30 ^ 2 ring semi-cured in a 15 ° ° C oven for 10 minutes and cured on a 150 ° C hot plate Table 6 Comparative Example 1 2 3 4 5 6 7 Vc area ratio (%) 22.5 9.8 45.3 6.7 16.2 8.7 23 Compressive Strength (gf/mm) 50 40 —.——— A 20 35 10 1800 2000 Vm Unremoved Unremoved Eliminated Unremoved Eliminated Unremoved Unremoved One Cycle and Formed Wafer Creep Creep without creep, creep, no screwing, creep, creep, creep-free grain shear strength (kgf/wafer) 4.3 14.1 6.6 16.2 5.2 15.2 20.1 Reflow resistance test (crack occurrence) No cracks, no cracks, no cracks, no cracks, as shown in Tables 5 and 6, the adhesive films according to Examples 1 to 4 have a compressive strength of 1 〇〇 to 15 〇〇 gf/mm 2 and are formed. After the gap is eliminated. Meanwhile, the adhesive films according to Comparative Examples 1, 3 and 7 have a very high Vc area ratio, but according to Comparative Example 1 mixed with a low resistance (four) degree, the adhesives of Comparative Examples 6 and 7 were recorded. The film has a very high resistance &gt; 1 strength. According to the comparative examples, the voids in the film of the coatings 2, 4, 6 and 7 were not eliminated after molding. Although the text has been disclosed in the context of ~ ~ /, physical examples, it should be understood that these specific real terms are provided by way of explanation and can be modified, changed and replaced without departing from the present. The invention of the private October clock and range. Therefore, the relevance of the present invention is limited. [图简明] Eight (none) [Main component symbol description] (none) 24

Claims (1)

201231597 七、申請專利範圍： 1. 一種用於半導體的黏著劑組成物，所述黏著劑組成物在 125 C固化30分鐘後在150°C具有l〇〇gf/mm2至15〇〇 gf/mm2的抗壓強度。 2. 根據申請專利範圍第1項所述的用於半導體的黏著劑組 成物，包括：黏結劑樹脂、環氧樹脂和胺固化劑。 3. 根據申請專利範圍第2項所述的用於半導體的黏著劑組 成物，其中所述黏結劑樹脂包括（甲基）丙烯酸酯共聚物。 4. 根據申請專利範圍第2項所述的用於半導體的黏著劑組 成物，其中所述胺固化劑包括由通式丨表示的第一胺固 化劑和由通式2表示的第二胺固化劑： [通式1]201231597 VII. Patent application scope: 1. An adhesive composition for a semiconductor, the adhesive composition having l〇〇gf/mm2 to 15〇〇gf/mm2 at 150 ° C after curing for 30 minutes at 125 C Compressive strength. 2. The adhesive composition for a semiconductor according to claim 1, comprising: a binder resin, an epoxy resin, and an amine curing agent. 3. The adhesive composition for a semiconductor according to claim 2, wherein the binder resin comprises a (meth) acrylate copolymer. 4. The adhesive composition for a semiconductor according to claim 2, wherein the amine curing agent comprises a first amine curing agent represented by the formula 丨 and a second amine curing agent represented by the formula 2 Agent: [Formula 1] 其中A表示C1至C6直鏈或支鏈的伸院基，心、r2、 R3、R4、R5、R6、R7、r8、r9和〜各自獨立地表示氫、 Cl至C4烷基、Cl至C4烷氧基、或氨基，且Rl、r2、r3、 h、R·5、R6、R7、Rs、R9和R10中的至少兩個包括氨基，且 [通式2]Wherein A represents a straight or branched chain of C1 to C6, and the cores, r2, R3, R4, R5, R6, R7, r8, r9 and ~ each independently represent hydrogen, Cl to C4 alkyl, Cl to C4 An alkoxy group, or an amino group, and at least two of R1, r2, r3, h, R.5, R6, R7, Rs, R9 and R10 include an amino group, and [Formula 2] 其中 B表示-S02-、-NHCO-或-Ο-，R,、r2、r3、r4、 R5、R6、R7、r8、R9和R1〇各自獨立地表示氫、口至匸斗 25 201231597 炫基、Cl至C4烧氧基、或氨基’且Ri、R〗、R3、R4、 R5、R6、R7、R8、R9和R10中的至少兩個包括氨基。 5 ·根據申請專利範圍第1項所述的用於半導體的黏著劑組 成物，其中所述黏著劑組成物具有500gf/mm2至1000 gf/mm2的抗壓強度。 6. 根據申請專利範圍第1項所述的用於半導體的黏著劑組 成物’其中所述用於半導體的黏著劑組成物在15〇°C下 固化30分鐘的一次循環後，在黏合體上具有小於15%的 第一空隙面積比。 7. 根據申請專利範圍第3項所述的用於半導體的黏著劑組 成物’其中所述（甲基）丙烯酸酯共聚物在25。(：具有 lOOOcps 至 30〇〇〇〇cps 的黏度。 8. 根據申請專利範圍第3項所述的用於半導體的黏著劑組 成物’其中所述（甲基）丙烯酸酯共聚物包括lwt%J_ 20wt%的（甲基）丙烯酸縮水甘油酯。 9. 根據申請專利範圍第2項所述的用於半導體的黏著劑組 成物’其中基於所述黏著劑組成物在固含量上的總量， 所述黏結劑樹脂的含量為35wt%至7〇wt%。 10. 根據申請專利範圍第2項所述的用於半導體的黏著劑組 成物，其中所述環氧樹脂包括含聯苯基的環氧樹脂。 11. 根據申請專利範圍第i 〇項所述的用於半導體的黏著劍 組成物’其中所述環氧樹脂包括3wt%至100wt%的所述 含聯苯基的環氧樹脂。 12. 根據申請專·圍第4項所述㈣於半導體的點著劍組 26 201231597 成物，其中所述胺固化劑包括05加％至5〇糾％的所述第 一胺固化劑和5〇wt%至99.5wt%的所述第二胺固化劑。 13. 根據申請專利範圍第12項所述的用於半導體的黏著劑 組成物，其中所述第一胺固化劑和所述第二胺固化刻的 重量比為1 : 1.1至1 : 100。 14. 根據申凊專利範圍第1項所述的黏著劑組成物其中所 述黏著劑組成物在15 0 °C下固化3 0分鐘的—次循環jl在 175°C下EMC成型60秒後，在黏合體上具有小於1〇%的 第二空隙面積比。 15. 根據申請專利範圍第2項所述的用於半導體的黏著劑組 成物’其中所述黏結劑樹脂的含量大於所述環氧樹脂和 所述胺固化劑的總量。 16. 根據申請專利範圍第2項所述的用於半導體的黏著劑組 成物，其中所述黏著劑組成物進一步包括&gt;5夕燒偶聯劑和 填料。 17. 根據申請專利範圍第16項所述的用於半導體的黏著劑 組成物，其中所述黏著劑組成物包括25wt%至7〇wt%的 所述黏結劑樹脂、5wt%至35wt%的所述環氧樹脂、1 wt% 至15wt%的所述胺固化劑、〇‘〇lwt%至5wt%的所述石夕炫 偶聯劑和l〇wt%至55wt%的所述填料。 18. —種用於半導體的黏著劑膜，包括根據申請專利範圍第 1至17項任意一項所述的黏著劑組成物。 27 201231597 四、指定代表圖： (一) 本案指定代表圖為：第（ ）圖。（無) (二) 本代表圖之元件符號簡單說明： 五、本案若有化學式時，請揭示最能顯示發明特徵的化學式：Wherein B represents -S02-, -NHCO- or -Ο-, R,, r2, r3, r4, R5, R6, R7, r8, R9 and R1〇 each independently represent hydrogen, or to the bucket 25 201231597 And Cl to C4 alkoxy, or amino' and at least two of Ri, R, R3, R4, R5, R6, R7, R8, R9 and R10 include an amino group. The adhesive composition for a semiconductor according to the above aspect of the invention, wherein the adhesive composition has a compressive strength of from 500 gf/mm 2 to 1000 gf/mm 2 . 6. The adhesive composition for a semiconductor according to claim 1, wherein the adhesive composition for the semiconductor is cured at 15 ° C for 30 minutes, on the adhesive. There is a first void area ratio of less than 15%. 7. The adhesive composition for a semiconductor according to claim 3, wherein the (meth) acrylate copolymer is at 25. (: having a viscosity of from 100 cps to 30 〇〇〇〇 cps. 8. The adhesive composition for a semiconductor according to claim 3, wherein the (meth) acrylate copolymer comprises 1 wt% J_ 20% by weight of glycidyl (meth)acrylate. 9. The adhesive composition for a semiconductor according to claim 2, wherein the total amount of the adhesive composition is based on the solid content. The content of the binder resin is from 35 wt% to 7 wt%. The adhesive composition for a semiconductor according to claim 2, wherein the epoxy resin comprises a biphenyl-containing epoxy. 11. The adhesive sword composition for a semiconductor according to the scope of the invention, wherein the epoxy resin comprises from 3 wt% to 100 wt% of the biphenyl-containing epoxy resin. According to the application of the fourth paragraph (4) in the semiconductor, the sword group 26 201231597, wherein the amine curing agent comprises 05% to 5% of the first amine curing agent and 5 〇wt % to 99.5 wt% of the second amine curing agent. The adhesive composition for a semiconductor according to claim 12, wherein the weight ratio of the first amine curing agent to the second amine curing is 1:1.1 to 1:100. The adhesive composition of claim 1, wherein the adhesive composition is cured at 150 ° C for 30 minutes - the secondary cycle jl is formed at 175 ° C for 60 seconds after EMC molding on the adhesive. Having a second void area ratio of less than 1% by weight. 15. The adhesive composition for a semiconductor according to claim 2, wherein the content of the binder resin is greater than the epoxy resin and the The total amount of the amine curing agent. The adhesive composition for a semiconductor according to claim 2, wherein the adhesive composition further comprises &gt; The adhesive composition for a semiconductor according to claim 16, wherein the adhesive composition comprises 25 wt% to 7 wt% of the binder resin, and 5 wt% to 35 wt% of the loop. Oxygen resin, 1 wt% to 15 wt% of the amine curing agent, 〇'〇lwt% 5 wt% of the Shi Xi Xuan coupling agent and 1% by weight to 55 wt% of the filler. 18. An adhesive film for a semiconductor, comprising according to any one of claims 1 to 17 of the patent application. 27 201231597 IV. Designation of representative drawings: (1) The representative representative of the case is: ( ) (None) (2) The symbol of the symbol of this representative is simple: 5. If there is a chemical formula in this case When revealing the chemical formula that best shows the characteristics of the invention:
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TWI510595B (en) * 2012-12-27 2015-12-01 Kansai University A is selectively conductive adhesive adhesive composition
TWI583759B (en) * 2014-11-17 2017-05-21 Lg 化學股份有限公司 Adhesive resin composition for semiconductor, adhesive film for semiconductor and dicing die-bonding film

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