201230436 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種適用於照明之大面積之有機 EL(Electroluminescence，電致發光）元件及其製造方法，尤 其係關於一種圖案化形成絕緣膜之有機E L元件及簡單地圖 案化形成之製造方法。 【先前技術】 有機發光元件係藉由對第1電極與第2電極之間施加電 壓’而夾持於第1電極與第2電極之間的有機發光層發光 者。作為有機發光元件，有機EL(電致發光）元件已經用於 以液晶顯示器為代表之平板顯示器中。平板顯示器係由於 像素數量較多而一個像素較細微。使用有機EL元件之顯示 器亦同樣係像素較細微，且利用細微之蒸鍍罩圖案化有機 EL元件。又’近年來’有機el元件正用於固體照明中。 固體照明係與顯示器相比要求更高亮度之產品。例如， 相對於顯示器所要求之亮度為丨，〇〇〇 Cd/m2左右，則固體照 明要求3,000 cd/m2〜5,000 cd/m2左右之亮度。為此，需要每 單位面積之大電流值流通於各電極中。 於使用有機EL元件之顯示器中，一個發光元件之大小係 不足1 mm見方。另一方面，於使用有機EL元件之固體照明 中，由於需要與顯示器相比更大之光束，所以一個發光元 件係要求100 mm見方以上之大小。 圖7係表示通常之有機EL元件之一個發光元件的平面 圖。再者，於最終產品中為了保護該有機EL元件免受環境 156296.doc 201230436 影響而需要密封構件，但於圖7中省略。 有機EL·元件之一個發光元件係於基板1上積層第1電極 2、有機發光層3及第2電極4而成。第1電極（陽極）2係於基板 1上藉由光微影法而圖案化形成。有機發光層3係以與第1 電極2相交叉之方式積層。第2電極4係以與有機發光層3及 第1電極2相交叉之方式積層，藉由對第1電極2與第2電極4 之間施加電I，而僅使處於該電極相交又部分中之有機發 光層3發光。 於有機EL元件中，為了取出光而第i電極2及第2電極4之 任一者需要透明導電膜。通常’第1電極2為透明導電膜。 使用氧化姻錫（ITO ’ Indium Tin Oxide)等作為透明導電膜之 材料。ITO係於透明導電膜之材料中體積電阻率最小，但與 金屬相比則ITO之體積電阻率明顯較高。 有機發光層3係包含有機發光材料之有機多層膜。有機發 光層3通常係將具有開口部之蒸鍍罩配置於形成有第丨電極 2之基板上之後，藉由於真空蒸鍍裝置内連續地蒸鍍而形 成。 使第2電極4為金屬膜等，使用真空蒸鍍裝置或濺鍍裝置 而製膜。第2電極4通常係配置具有與用於有機發光層3之蒸 鍍罩不同之開口部的蒸鍍罩後，形成於有機發光層3上。 若將上述構成之有機EL元件形成為單一大面積並流通大 電流，則由於電壓下降而變暗β χ，於大電流密度且大面 積之有機EL元件之情形時，則產生元件周邊部變亮、中央 部變暗之現象（亮度不均其係起因於透明導電膜之電阻值 156296.doc 201230436 較南及由於大電流而產生電壓下降之情況。 為了使電Μ下降較小並均勻地改善明亮度，較佳為將透 月導電膜之膜厚做厚至1G〇 nm〜5GQ nm左右而降低薄膜電 阻值。以此，可抑制亮度不均。 然而，若藉由光微影法而形成厚的透明導電膜（第1電 極則第i電極2之邊緣部變成㈣之剖面。圖8係表示圖7 之⑷線之剖面圖。若於剖面陡Λ肖之第i電極2上積層有機發 光層3(膜厚.100 nm〜3〇〇 nm左右），則於與第1電極2之邊 緣部重疊之部分的有機發光層3中易產生薄膜化、針孔、裂 =等缺陷。依此，於第i電極2與第2電極4之間易產线漏 電〜或短路’而成為導致有機扯元件之品質下降及 降之原因。 之決上述問題，提出有如專利文獻1或專利文獻2般 之有機EL元件。 於專利文獻1中，為了得到精度較高之發光區域，使用光 微影技術設置絕緣層，而古 而以间精度形成圖案。圖9係表示絕 雷二之圖案化加工步驟。首先’清洗作為第1電極之透明導 電膜被圖案化之基板，並使之乾燥。其次，於上述基板Γ 以方疋塗法整面塗佈感光劑（光阻劑）。藉由預 曝光罩進行圖案化，藉由曝光器照射 感^其後’進行顯影㈤刻及清洗）、經過後供烤而圖荦化 加工尚精度之絕緣層。 … 於專利文獻2中，揭示有薜由鉬 方法。 猎由輕式印刷法而形成絕緣層之 156296.doc 201230436 [先前技術文獻] [專利文獻] [專利文獻1]日本4利特開平3·25〇5㈣純（請求们） [專利文獻2]曰本專利特開2005-310404號公報(段落 [0013]及[0014]) 【發明内容】 [發明所欲解決之問題] 專利文㈣所揭示之圖案化加工方法係於半導體或平 面顯示器中通常所使用之高精度之加工技術，但需要大規 模且高價之製造設備。X，於專利文獻4所揭示之方法 中，由於暫時先整面塗佈光阻劑，其後圖案化加工，所以 大量地消耗不需要之光阻材料。光阻材料及曝光器價格 尚，且顯影液之廢棄處理亦需要花費費用及工夫。因此， 存在製造成本變高之問題。上述成本提高係於如顯示器般 之南附加值產品中可容許，但於照明產品中為非常大 題。 於照明產品中，即使基板尺寸相同，元件面板之尺寸亦 為各種各樣’要求適應於多品種之製造方法。於使用光微 影技術之方法中’曝光罩之更換及調整成為必需。於親式 印刷法中’輥版之更換及調整成為必需。因此，存在對於 兀件尺寸不同之品種變更之準備中需要時間，使生產性下 降之問題。 圖10係表示圖7之⑻線之剖面圖。如圖1〇中所示般於⑻ 線之剖面中，於第1€極2之平坦部分上積層有有機發光層 156296.doc 201230436 3。於有機EL元件中，由於第2電極4僅於必需部分製膜，所 以製膜時於有機發光層3上使用第2電極用蒸錢革8。於使用 第2電極用蒸鍍罩8覆蓋時，若端部即使少許產生變形或扭 轉’則亦會損傷有機發光層3而產生缺陷◎因此，即使於第 1電極2之平坦部分上積層有機發光層3之情形時，亦會易於 在第1電極2及第2電極4之間產生洩漏電流或短路之狀態’ 而成為導致有機EL元件之品質下降及良率下降之原因。 本發明係有鑒於上述課題而開發者，其目的係提供一種 製造有機EL元件之方法，該方法無需高價之製造設備，可 適用於多品種之產品中且低成本。 [解決問題之技術手段] 為了解決上述課題，本發明係提供一種照明用有機£[元 件之乂造方法，該有機EL元件係於基板上依序積層第1電 極、有機發光層及第2電極，於俯視之情形時上述第2電極 以與上述第1電極相交叉之方式配置，該照明用有機E L元件 之製造方法係包含：絕緣膜形成步驟，其僅於對應於形成 有第1電極之基板上的上述第丨電極與上述第2電極相交叉 之區域之特疋刀中，以非接觸方式非圖案化加工地塗佈 絕緣材料而形成絕緣膜；有機發光層形成步驟，其於該絕 緣膜形成步驟之後，使用具有開口部之蒸鍍罩，於位於上 述乂又區域内之上述第1電極上，藉由真空蒸鍍而形成有機 發光層，及第2電極形成步驟，係於該有機發光層形成步驟 之後’使用具有與上述蒸鍍罩不同之開口部之其他蒸鍍 罩’於上述有機發光層上形成第2電極。 156296.doc 201230436 依據上述發明，可僅於必需之部分中形成絕緣膜。依此， 由於無需多餘地塗佈絕緣材料，所以可抑制材料成本。由 於無去除於先前光微影法中所進行之預烘烤、曝光及顯影 等之多餘地塗佈之絕緣材料的步驟，所以亦不需要配合於 清潔劑、廢液處理及圖案之高價之曝光罩。由於無去除絕 緣材料之步驟，所以塗佈絕緣材料後，僅進行將其硬化之 步驟即可形成絕緣膜。依據上述發明，藉由於特定部分設置 絕緣層，則可防止製造過程中所產生之有機發光層之損傷， 而可製成包含無缺陷之有機發光層之照明用有機el元件。 ;上述發明之態樣中，較佳為上述絕緣膜形成步驟係 包含以下步驟：相對於上述第丨電極空開間隔而配置單一喷 觜自上述單喷嘴向形成有上述第1電極之基板之上述特 定部分斷續地喷出上述絕緣材料；及使上述基板或上述單 一嗔嘴相對地移動，於上述特定部分Μ錢叙絕緣膜。 依據上述發明之-態樣，可無需高價之製造設備僅於必 要之特定的位置中形成絕緣膜。χ，即使於元件尺寸變更 之隋形時’亦藉由僅選擇變更塗佈位置控制程式，而可瞬 間地進行準備變更。 依據上述發明之_態樣，若將上述特定部分設為對應於 下述區域之至少一者的部分則較佳：於俯視之情形時上述 第1電極之邊緣部與上述第2電極之面相交叉之區域，或上 述第1電極之面與上述第2電極之邊緣部相交叉之區域。 右將特定部>設為對應於第i電極之邊緣部與第2電極之 面相交又之區域的部分’則可抑制於第^電極之邊緣部上形 156296.doc 201230436 成之有機發光層的薄膜化、針孔、裂痕等缺陷產生。依此， 由於在電極間之茂漏電流或短路等不易產生，所以進而可 抑制品質下降或良率下降。 若將特定部分設為對應於第！電極之面與第2電極之邊緣 部相交又之區域的部分’則由於在第2電極形成時使用之蒸 鍍罩之端部與非發光元件部分重疊，所以可防止損傷發光 凡件口p刀之有機發光層。依此，由於在電極間之茂漏電流 或短路等^產生，所以進而可抑制品質下降或良率下降。 又，本發明係提供一種照明用有機EL元件，其係包含於 基板上依序積層有第i電極、有機發光層及第2電極之發光 疋件’且於俯視之情形時上述第2電極以與第ι電極相交又 之方式而配置的有機EL元件’且其包含僅於對應於形成有 第1電極之基板上的上述第1電極與上述第2電極相交又之 區域之特定部分中，以非接觸方式非圖案化加工地塗佈有 機絕緣材料而形成之有機絕緣膜。 據上述發明’由於以非接觸方式僅於必需之部分中形 成、、邑緣膜’所以不需要圖案化加工之步驟及設備’從而可 抑制I ^成本°又’可製成-種照明用有機EL元件，其包 含於特定部分中包含絕緣膜之製造過程中所產生之有機發 光層的損傷下降、缺陷較少之有機發光層。 於上述發明之-態樣中，若將上述特定部分設為上述第【 電：之邊緣。p與上述第2電極之面相交叉之區域，或上述第 毛極之面與上述第2電極之邊緣部相交叉之區域的至少— 者則較佳。 156296.doc 201230436 若將特定部分設為對應於第1電極之邊緣部與第2電極之 面相交又之區域的部分，則可製成薄膜化、針孔、裂痕等 之缺陷較少之有機發光層。依此，成為於電極間之洩漏電 流或也路等不易產生之有機el元件。 若將特疋部分設為對應於第丨電極之面與第2電極之邊緣 部相交又之區$的部》’則力第2電極形成日夺使用之蒸錄罩 之端部與非發光元件部分重疊。因此，可製成於發光元件 部分中損傷較少之有機發光層。依此，成為於電極間之洩 漏電流或短路等不易產生之照明用有機EL元件。 [發明之效果] 依據本發明，由於以非接觸方式形成絕緣膜，，所以可抑 制絕緣膜之材料成本。又，不需要清潔劑及廢液處理，可 於元件尺寸之變更時瞬間地進行準備變更。又，亦不需要 使用高價之製造設備。依此’可製造更廉價、缺陷較少之 照明用有機EL元件。 【實施方式】 以下，參照圖式說明本發明之照明用有機EL元件及其製 造方法之一實施形態。 <第1實施形態> 圖1係表示本實施形態之照明用有機EL元件之一個發光 元件的一例之概略平面圖。 本實施形態之照明用有機EL元件係包含於基板1上依序 積層有第1電極2、有機發光層3及第2電極4之發光元件。於 俯視有機EL元件之情形時，第1電極2之面的外周與第2電極 156296.doc •10· 201230436 4之面的外周係未完全重疊，第2電極4與第i電極2相交叉而 配置。於第1電極2與有機發光層3之間或基板丨與有機發光 層3之間的特定部分中，設置有絕緣膜5。所謂特定部分係 指設為對應於第1電極2與第2電極4相交又之區域之部分。 上述相乂又之區域係於俯視有機EL元件之情形時，可設為 第1電極2之邊緣部與第2電極4之面相交叉之區域，或第工 電極2之面與第2電極4之邊緣部相交叉之區域。於本實施形 態中，將特定部分設為對應於第丨電極2之邊緣部與第2電極 4之面相交叉之區域的部分。即，僅於上面積層有有機發光 層3/第2電極4之第丨電極2之圖案化階差部分中設置絕緣膜 5。因此，必需絕緣膜之區域非常少，從而可簡單地形成絕 緣膜。 於第1基板上依序積層有第丨電極2/有機發光層3/第2電極 4之部分作為發光元件起作用。即，藉由對第丨電極2與第2 電極4之間施加電壓，而發光元件之有機發光層3發光，光 穿過基板1而向外部放射。於本實施形態中，該發光元件係 設為50 nun見方〜300 mm見方之大小。 於第1基板上依序積層有第丨電極2/絕緣膜5/有機發光層 3/第2電極4或絕緣膜5/有機發光層3/第2電極4之部分係設 為非發光元件部分。 基板1係設為透光性基板。 第1電極2係設為具有導電性之透明之膜。例如可使用氧 化銦錫（ιτο)、氧化錫（Sn〇2)、氧化辞（Zn〇)等之金屬氧化膜 等第1电極2之厚度係設為1〇〇 nm〜5〇〇 nm左右。第i電極2 156296.doc 201230436 亦可於邊緣部具有陡峭之剖面。 有機發光層3係設為包含有機發光材料之有機多層臈。例 如，有機多層膜之構成係設為電洞注入層/電洞傳輸層/發光 層/電子傳輸層/電子注入層等。有機發光層3之厚度係設為 100 nm〜300 nm左右。 第2電極4係設為具有導電性之膜《例如，第2電極4係包 含銘（A1)或銀（Ag)之金屬膜或金屬氧化膜等。 絕緣膜5係設為電性絕緣之膜。例如，可使用正型光阻、 負型光阻或其他硬化型樹脂等。絕緣膜5之厚度係相對於第 1電極2與第2電極4之間之施加電壓，若能夠耐壓則足夠， 但較理想為第1電極2之厚度以上，1 〇〇 nm〜10 μηι之範圍較 佳。絕緣膜5之寬度係於顯示器之情形時被要求為非常狹小 之寬度’但於1 〇〇 mm見方尺寸以上之有機EL照明中，由於 未要求狹小之寬度’亦未要求精度，所以較佳為〇.05 mm〜2 mm。 其次’說明本實施形態之有機EL元件之製造方法。本實 施形態之有機EL元件之製造方法係包含：絕緣膜形成步 驟、有機發光層形成步驟、第2電極形成步驟。 圖2係表示說明本實施形態之有機el元件之製造方法的 一例之圖。圖2(a)至圖2(d)係觀察圖（1)之（a)線中之别面之 圖。 ⑴圖2(a) 於基板1上，圖案化第1電極2。 (2)圖2(b):絕緣膜形成步驟 於絕緣膜形成步驟中，首先，清洗形成有第1電極2之基 156296.doc201230436 VI. Description of the Invention: [Technical Field] The present invention relates to an organic EL (Electroluminescence) element suitable for illumination and a method of manufacturing the same, and more particularly to a pattern forming insulating film An organic EL device and a manufacturing method which is simply patterned. [Prior Art] An organic light-emitting device is an organic light-emitting layer light-emitting device that is sandwiched between a first electrode and a second electrode by applying a voltage between a first electrode and a second electrode. As an organic light-emitting element, an organic EL (electroluminescence) element has been used in a flat panel display typified by a liquid crystal display. Flat panel displays have a small number of pixels due to the large number of pixels. The display using the organic EL element is also fine in pixels, and the organic EL element is patterned by a fine vapor deposition cover. Also, 'in recent years' organic EL elements are being used in solid state lighting. Solid lighting is a product that requires higher brightness than displays. For example, the brightness required for the display is 丨, 〇〇〇 Cd/m2 or so, and the solid illumination requires a brightness of about 3,000 cd/m2 to 5,000 cd/m2. For this reason, a large current value per unit area is required to flow through the respective electrodes. In a display using an organic EL element, one light-emitting element has a size of less than 1 mm square. On the other hand, in solid-state illumination using an organic EL element, since a larger beam is required than the display, one illuminating element requires a size of 100 mm square or more. Fig. 7 is a plan view showing one light-emitting element of a general organic EL element. Further, a sealing member is required in the final product to protect the organic EL element from the environment 156296.doc 201230436, but is omitted in FIG. One of the organic EL elements is formed by laminating the first electrode 2, the organic light-emitting layer 3, and the second electrode 4 on the substrate 1. The first electrode (anode) 2 is patterned on the substrate 1 by photolithography. The organic light-emitting layer 3 is laminated so as to intersect the first electrode 2. The second electrode 4 is laminated so as to intersect the organic light-emitting layer 3 and the first electrode 2, and the electric current I is applied between the first electrode 2 and the second electrode 4, and only the intersecting portion of the electrode is provided. The organic light-emitting layer 3 emits light. In the organic EL device, a transparent conductive film is required for any of the i-th electrode 2 and the second electrode 4 in order to extract light. Usually, the first electrode 2 is a transparent conductive film. As the material of the transparent conductive film, ITO 'Indium Tin Oxide or the like is used. The ITO is the smallest in volume resistivity in the material of the transparent conductive film, but the volume resistivity of ITO is significantly higher than that of the metal. The organic light-emitting layer 3 is an organic multilayer film containing an organic light-emitting material. The organic light-emitting layer 3 is usually formed by disposing a vapor deposition cover having an opening on a substrate on which the second electrode 2 is formed, and then continuously vapor-depositing it in a vacuum vapor deposition device. The second electrode 4 is made of a metal film or the like, and a film is formed using a vacuum vapor deposition apparatus or a sputtering apparatus. The second electrode 4 is usually formed on the organic light-emitting layer 3 by arranging a vapor deposition cover having an opening different from that of the vapor deposition cover for the organic light-emitting layer 3. When the organic EL element having the above-described configuration is formed into a single large area and a large current flows, the voltage 下降 is darkened by β χ, and in the case of a large current density and a large area of the organic EL element, the peripheral portion of the element is brightened. The phenomenon of darkening in the central part (uneven brightness is caused by the resistance value of the transparent conductive film 156296.doc 201230436 is relatively south and the voltage drops due to large current. In order to make the electric drop less and evenly improve the brightness Preferably, the thickness of the vapor-permeable conductive film is increased to about 1 G 〇 nm to 5 GQ nm to lower the sheet resistance value, thereby suppressing uneven brightness. However, if the thickness is formed by photolithography The transparent conductive film (the edge of the ith electrode 2 becomes the cross section of the fourth electrode in the first electrode. Fig. 8 is a cross-sectional view taken along line (4) of Fig. 7. If the organic light emitting layer is laminated on the i-th electrode 2 of the steep section 3 (having a film thickness of about 100 nm to about 3 Å), defects such as thinning, pinholes, cracks, and the like are likely to occur in the organic light-emitting layer 3 which is overlapped with the edge portion of the first electrode 2. Easy production line leakage between the ith electrode 2 and the second electrode 4 In the case of the above-mentioned problem, an organic EL element such as Patent Document 1 or Patent Document 2 has been proposed. In order to obtain a high precision, Patent Document 1 proposes a method of reducing the quality of the organic component. In the light-emitting region, the insulating layer is provided by the photolithography technique, and the pattern is formed with the precision in the past. FIG. 9 shows the patterning processing step of the lightning-proof two. First, the substrate which is patterned by the transparent conductive film as the first electrode is cleaned. And drying the coating agent on the substrate Γ by the square coating method. The patterning is performed by the pre-exposure cover, and the image is irradiated by the exposure device. (5) Engraving and cleaning), after the baking, the insulating layer is processed with precision. In Patent Document 2, the method of molybdenum is disclosed. The hunting method is formed by light printing method. 156296.doc 201230436 [PRIOR ART DOCUMENT] [Patent Document 1] [Patent Document 1] Japanese Patent No. 4, 25, 5, 4, 4, and 4 (Purpose) [Patent Document 2] Japanese Patent Laid-Open Publication No. 2005-310404 (paragraph [0013] and [0014]) The content of the invention [The problem to be solved by the invention] The pattern processing method disclosed in Patent (4) is a high-precision processing technique generally used in semiconductor or flat panel displays, but requires large-scale and high-priced manufacturing equipment. X, In the method disclosed in Patent Document 4, since the photoresist is applied to the entire surface temporarily, and then patterned, the unnecessary photoresist material is consumed in a large amount. The photoresist material and the exposure device are still available, and the developer is The disposal process also requires cost and effort. Therefore, there is a problem that the manufacturing cost becomes high. The above-mentioned cost increase is acceptable in a south value-added product such as a display, but is a very big problem in lighting products. In the lighting products, even if the substrate size is the same, the size of the component panel is variously required to be adapted to a variety of manufacturing methods. In the method of using photolithography, the replacement and adjustment of the exposure cover is necessary. In the pro-printing method, the replacement and adjustment of the roll plate is necessary. Therefore, there is a problem that it takes time to prepare for the change of the size of the parts, and the productivity is lowered. Figure 10 is a cross-sectional view taken along line (8) of Figure 7. As shown in Fig. 1A, in the cross section of the (8) line, an organic light-emitting layer 156296.doc 201230436 3 is laminated on the flat portion of the 1st pole 2. In the organic EL device, since the second electrode 4 is formed only in a necessary portion, the second electrode steamed leather 8 is used for the organic light-emitting layer 3 at the time of film formation. When the second electrode is covered with the vapor deposition cover 8, if the end portion is slightly deformed or twisted, the organic light-emitting layer 3 is damaged and defects occur. Therefore, even if the organic light is laminated on the flat portion of the first electrode 2 In the case of the layer 3, a state in which a leakage current or a short circuit is easily generated between the first electrode 2 and the second electrode 4 is caused, which causes a decrease in the quality of the organic EL element and a decrease in the yield. The present invention has been made in view of the above problems, and an object thereof is to provide a method for producing an organic EL element which is applicable to a variety of products and has low cost without requiring expensive manufacturing equipment. [Means for Solving the Problems] In order to solve the above-mentioned problems, the present invention provides a method for manufacturing an element for illumination, in which a first electrode, an organic light-emitting layer, and a second electrode are sequentially laminated on a substrate. The second electrode is disposed so as to intersect the first electrode in a plan view. The method for producing an organic EL device for illumination includes an insulating film forming step that corresponds to only the first electrode is formed. An insulating material is formed by applying an insulating material in a non-contact manner to a non-patterning process to form an insulating film in a non-contact-type region of the substrate, and an organic light-emitting layer forming step for the insulating layer After the film formation step, the vapor deposition cover having the opening portion is used to form the organic light-emitting layer by vacuum deposition on the first electrode located in the region and the second electrode forming step, and the organic electrode layer is formed. After the light-emitting layer forming step, a second electrode is formed on the organic light-emitting layer by using another vapor deposition cover having an opening different from the vapor deposition cover. 156296.doc 201230436 According to the above invention, the insulating film can be formed only in the necessary portion. Accordingly, since the insulating material is not required to be excessively coated, the material cost can be suppressed. Since there is no step of removing the excessively applied insulating material such as prebaking, exposure, and development performed in the previous photolithography method, there is no need for a high-priced exposure to the cleaning agent, waste liquid treatment, and pattern. cover. Since there is no step of removing the insulating material, after the insulating material is applied, only the step of hardening it can form an insulating film. According to the above invention, by providing the insulating layer in a specific portion, damage to the organic light-emitting layer generated in the manufacturing process can be prevented, and an organic EL element for illumination including the organic light-emitting layer without defects can be obtained. In the aspect of the invention, it is preferable that the insulating film forming step includes a step of arranging a single squeezing from the single nozzle toward the substrate on which the first electrode is formed, with respect to the second electrode gap The specific portion intermittently ejects the insulating material; and the substrate or the single nozzle is relatively moved, and the insulating film is used in the specific portion. According to the above aspect of the invention, it is possible to form the insulating film only in a necessary specific position without expensive manufacturing equipment. In other words, even when the shape of the component is changed, the preparation position change can be instantaneously changed by merely selecting the change of the coating position control program. According to the aspect of the invention, it is preferable that the specific portion corresponds to at least one of the following regions: the edge portion of the first electrode crosses the surface of the second electrode in a plan view The region or the region where the surface of the first electrode intersects the edge portion of the second electrode. The right portion is set to a portion corresponding to the region where the edge portion of the i-th electrode intersects the surface of the second electrode, and the organic light-emitting layer formed on the edge portion of the electrode 156296.doc 201230436 can be suppressed. Defects such as thin film formation, pinholes, cracks, and the like. As a result, leakage current or short circuit between the electrodes is less likely to occur, so that deterioration in quality or degradation in yield can be suppressed. If the specific part is set to correspond to the first! The portion of the region where the surface of the electrode intersects the edge portion of the second electrode is partially overlapped with the non-light-emitting element at the end of the vapor deposition cover used for forming the second electrode, thereby preventing damage to the light-emitting member Organic light-emitting layer. As a result, leakage current or short circuit between the electrodes is generated, so that deterioration in quality or degradation in yield can be suppressed. Furthermore, the present invention provides an organic EL device for illumination, comprising a light-emitting element of an ith electrode, an organic light-emitting layer, and a second electrode sequentially stacked on a substrate; and in a plan view, the second electrode is An organic EL element disposed to intersect with the first electrode and configured to include only a specific portion of a region corresponding to the first electrode and the second electrode on the substrate on which the first electrode is formed, An organic insulating film formed by coating an organic insulating material in a non-contact manner without patterning. According to the above invention, since the step of forming the film is performed only in the necessary portion in a non-contact manner, the step of the patterning process and the device are not required, so that the I ^ cost can be suppressed and the organic material can be made. The EL element includes an organic light-emitting layer having reduced damage and less defects in the organic light-emitting layer produced in the manufacturing process including the insulating film in a specific portion. In the aspect of the invention described above, the specific portion is set to the edge of the above [Electrical:]. It is preferable that at least a region where p intersects with the surface of the second electrode or a region where the surface of the first electrode intersects with the edge portion of the second electrode is preferable. 156296.doc 201230436 When a specific portion is set to a portion corresponding to a region where the edge portion of the first electrode intersects the surface of the second electrode, organic light emission having less defects such as thinning, pinholes, and cracks can be obtained. Floor. Accordingly, it is an organic el element which is difficult to generate such as a leakage current between electrodes or an eliminator. When the characteristic portion is set to a portion corresponding to the region of the second electrode that intersects the edge portion of the second electrode, the second electrode forms the end portion of the vapor mask and the non-light-emitting element. Partial overlap. Therefore, an organic light-emitting layer which is less damaged in the light-emitting element portion can be produced. As a result, an organic EL element for illumination which is less likely to be generated such as a leakage current or a short circuit between electrodes is used. [Effects of the Invention] According to the present invention, since the insulating film is formed in a non-contact manner, the material cost of the insulating film can be suppressed. Further, the cleaning agent and the waste liquid are not required to be processed, and the preparation can be changed instantaneously when the component size is changed. Also, there is no need to use expensive manufacturing equipment. According to this, it is possible to manufacture an organic EL element for illumination which is cheaper and has fewer defects. [Embodiment] Hereinafter, an embodiment of an organic EL element for illumination of the present invention and a method for producing the same will be described with reference to the drawings. <First Embodiment> Fig. 1 is a schematic plan view showing an example of one light-emitting element of the organic EL element for illumination of the embodiment. The organic EL device for illumination of the present embodiment includes a light-emitting element in which the first electrode 2, the organic light-emitting layer 3, and the second electrode 4 are sequentially laminated on the substrate 1. When the organic EL element is viewed in plan, the outer circumference of the surface of the first electrode 2 and the outer circumference of the surface of the second electrode 156296.doc •10·201230436 4 do not completely overlap, and the second electrode 4 and the i-th electrode 2 intersect. Configuration. An insulating film 5 is provided in a specific portion between the first electrode 2 and the organic light-emitting layer 3 or between the substrate 丨 and the organic light-emitting layer 3. The specific portion is a portion corresponding to a region where the first electrode 2 and the second electrode 4 intersect. In the case where the organic EL element is planarly viewed, the region in which the edge portion of the first electrode 2 intersects the surface of the second electrode 4 or the surface of the working electrode 2 and the second electrode 4 may be used. The area where the edges intersect. In the present embodiment, the specific portion is a portion corresponding to a region where the edge portion of the second electrode 2 intersects the surface of the second electrode 4. That is, the insulating film 5 is provided only in the patterning step portion of the second electrode 2 of the organic light-emitting layer 3/second electrode 4 in the upper layer. Therefore, the area of the insulating film is required to be very small, so that the insulating film can be simply formed. A portion in which the second electrode 2 / the organic light-emitting layer 3 / the second electrode 4 are sequentially laminated on the first substrate functions as a light-emitting element. In other words, by applying a voltage between the second electrode 2 and the second electrode 4, the organic light-emitting layer 3 of the light-emitting element emits light, and the light passes through the substrate 1 and is radiated to the outside. In the present embodiment, the light-emitting element is set to have a size of 50 nun square to 300 mm square. The second electrode 2/insulating film 5/organic light-emitting layer 3/second electrode 4 or the insulating film 5/organic light-emitting layer 3/second electrode 4 are sequentially laminated on the first substrate as a non-light-emitting element portion. . The substrate 1 is a light-transmitting substrate. The first electrode 2 is made of a conductive transparent film. For example, the thickness of the first electrode 2 such as a metal oxide film such as indium tin oxide (ITO), tin oxide (Sn〇2) or oxidized (Zn) can be set to about 1 〇〇 nm to 5 〇〇 nm. . The i-th electrode 2 156296.doc 201230436 may also have a steep profile at the edge. The organic light-emitting layer 3 is an organic multilayer germanium containing an organic light-emitting material. For example, the composition of the organic multilayer film is set to be a hole injection layer/hole transport layer/light-emitting layer/electron transport layer/electron injection layer. The thickness of the organic light-emitting layer 3 is set to be about 100 nm to 300 nm. The second electrode 4 is a film having conductivity. For example, the second electrode 4 is a metal film or a metal oxide film containing a metal (A1) or a silver (Ag). The insulating film 5 is made of an electrically insulating film. For example, a positive photoresist, a negative photoresist or other hardening resin can be used. The thickness of the insulating film 5 is sufficient for the voltage to be applied between the first electrode 2 and the second electrode 4, and it is preferable that the thickness of the insulating film 5 is equal to or greater than the thickness of the first electrode 2, and is preferably 1 〇〇 nm to 10 μηι. The range is better. The width of the insulating film 5 is required to be a very narrow width in the case of a display. However, in an organic EL illumination having a size of 1 〇〇 mm or more, since a narrow width is not required and accuracy is not required, it is preferably 〇.05 mm~2 mm. Next, a method of manufacturing the organic EL device of the present embodiment will be described. The method for producing an organic EL device of the present embodiment includes an insulating film forming step, an organic light emitting layer forming step, and a second electrode forming step. Fig. 2 is a view showing an example of a method of manufacturing the organic EL element of the embodiment. Fig. 2(a) to Fig. 2(d) are views showing the other faces in the line (a) of Fig. (1). (1) FIG. 2(a) The first electrode 2 is patterned on the substrate 1. (2) Fig. 2(b): insulating film forming step In the insulating film forming step, first, the base on which the first electrode 2 is formed is cleaned. 156296.doc
•S 12 201230436 板1之表面。其後，於形成有第1電極2之基板1上之特定部 分中塗佈絕緣材料，且使之硬化。硬化方法係對應於所使 用之絕緣材料而適當地選擇。圖3係例示使用正型之光阻作 為絕緣材料之情形時的絕緣膜形成之步驟圖。依據圖3,藉 由清洗、光阻描晝（塗佈）及後供烤之步驟可形成絕緣膜卜 於正型光阻塗佈後，僅以加熱（後洪烤）而硬化該正型光阻， 使其成為絕緣膜5。由於僅於特定部分中塗佈絕緣材料，所 以不需要藉由先前之光微影法而形成絕緣膜時所必需 丈共烤、曝光及顯像之步驟。 絕緣材料係以非接觸方4 太 ㈣方式㈣。作為以非接觸方式塗佈 出方法係點狀喷出型之分注器最適宜。作為點狀嗔 刀注器，例如，可使用艾訊公司製造之jet 冊商標）2等。絕緣材料之塗佈係㈣於-個發 對應於=之—:=Γ。噴嘴州 大小而適當設定緣敝㈣作㈣象之發光元件的 於絕緣材料令較理想的是 :缘材料(光阻)，中’如噴墨般配置有複數 墨頭可謂比财效H由於喷墨係為 油，用作本實施形態之絕緣材料之黏性較高之= =法使用喷墨來印刷。又，由於噴墨係:體： 出量因微小而較少’不適合於…左右之厚度 成。進而，雖然喷墨適合於基板面整面地 = 合塗佈於較少之縱橫之線。 但不適 156296.doc -13- 201230436 於使用點;^喷出型之分注器之情形時，首先，將單—喷 嘴6之則端面向形成有第1電極2之基板1，以前端不接觸第^ 電極2之方式空開間隔而配置單一喷嘴6。例如，相對於第1 電極2之邊緣部（圖案化階差部分），若自第1電極2之表面起 空開0.1 mm〜1.0 mm之間隔而配置單一喷嘴6則較佳。 其次’自單一噴嘴6向形成有第1電極2之基板1上之特定 部分斷續地喷出絕緣材料。又，一面喷出絕緣材料—面使 基板1或單一噴嘴6相對地移動，藉此可於特定部分中形成 連續之線形之絕緣膜5。絕緣材料之喷出量、基板丨或單一 喷嘴6之移動速度等係考慮到塗佈對象表面之潤濕性、絕緣 材料之種類及黏度，以絕緣膜5成為所需之厚度及寬度之方 式而適當設定。 圖4係表示絕緣膜形成之一例之模式圖。圖4(a)係自喷嘴 噴出之絕緣材料之喷出粒子。喷出量相當於5 nL，喷出粒 子直徑相當於0.2 mn^於將喷出重複速度設為2〇〇 d〇t/sec、 將移動速度設為1〇〇 mm/sec之條件時，喷出粒子以〇5爪爪 間隔塗佈於基板上。圖4〇3)及圖4((〇係表示喷著於基板後之 絕緣材料之情況。喷出之絕緣材料喷著後，如圖叫)所示般 擴散，最終如圖4(c)般呈線狀連接，形成厚度5 μηι、寬度2 〇 mm之絕緣膜5。雖然於1〇〇mm見方以上之照明用錢以元 件中該寬度係可足夠容許’但藉由變更噴出量及間隔而容 易地變更寬度。 (3)圖2(c):有機發光層形成步驟 將經過絕緣膜形成步驟之基板丨搬入至真空蒸鍍裝置 156296.doc •14· 201230436 内。於基板1上覆蓋有機用苯 , . 羔鍍罩7，積層蒸鍍有機材料而 心成有機發光層3。有機用某供 „ ± 畀機用瘵鍍罩7例如係具有於圖1之（a) 線之朝向上與第1電極2之面相等 ΘΒ 伸寻我比第1電極2之面更大的 開口部。於覆蓋有機蒸 规卓’呀该開口部覆及第1電極 。其他之有機材料之蒸鍍條件為任意。 (4)圖2(d):第2電極形成步驟 將經過有機發光層形成步驟之基板！搬人至別的真空蒸 又裝置内於基板1上覆蓋第2電極用蒸錄罩8,積層基錢導 電性材料而形成第2電極4。第2電極用蒸鍍罩8例如係使用 具有於圖1之⑷線之朝向上比第！電極2更大、於圖k(b)線 之朝向上比第1電極2更小的開口部者。其他之導電性材料 之蒸鍍條件為任意。第2電極形成步驟後，適當形成密封構 件（未圖示）。 再者，雖然於本實施形態中藉由真空蒸鍍第2電極而製 膜’但並不限定於此’亦可藉由濺鍍法而製膜。 <第2實施形態> 除形成絕緣膜之特定部分不同以外，本實施形態之照明 用有機EL元件為與第1實施形態相同之構成。 圖5係表示本實施形態之照明用有機el元件之一個發光 元件的一例之概略平面圖。本實施形態之絕緣膜5係於俯視 有機EL元件之情形時，設置於第1電極2之邊緣部與第2電極 4之面相交叉之區域、及第1電極2之面與第2電極4之邊緣部 相交叉之區域中。即，除積層有有機發光層3/第2電極4之 第1電極2之圖案化階差部分以外，於第2電極4形成時，於 156296.doc 15 201230436 有機發光層3上對應於有可能接觸第2電極用蒸鍍罩8之部 位之部分形成絕緣膜5。 圖6係表示圖5之（b)線之剖面圖。於圖6中，絕緣❺設置 於第1電極2上之平坦部分中。第2電極用蒸鍍罩8係以開口 部之端部罩於絕緣膜5上之方式使用。如此使用時，由於第2 電極用蒸鑛罩8與有機發光層3相接觸之部分成為非發光元件 部分，所以不會損傷發光元件中之有機發光層3而完成。 於本實施形態中，縱橫地、連續地形成絕緣膜卜若使絕 緣膜5之塗佈條件設為圖4之所示之條件，則於⑽麵見方 之發光元件之情形時，可用4秒進行絕緣膜5之描晝，即使 為15倒角之主基板亦可用1分鐘進行描畫。 進而於使用大型之基板之情形時，亦可藉由以對一個發 光元件配置單一喷嘴6之方式於基板〗上配置複數個單一喷 嘴6，而於複數個發光元件中同時描畫絕緣膜5。依此，亦 可容易地進一步提高處理速度。 依據上述第1實施形態及第2實施形態’不使用光微影 法，僅於所欲直接形成之部分中直接塗佈描畫光阻劑，僅 用烘烤而可形成絕緣膜5。因此，與先前之光微影技術相 比，可減少絕緣材料之使用量之外，僅使用先前之烘烤爐 而無需新的設備。 又，以喷嘴為一軸，進而以基板為一軸，藉由變動程式， 可瞬時地對應於多種多樣之元件尺寸之變更。 又，由於無需如輥式印刷般直接接觸於基板而轉印，所 以可相對於如基板之凹凸、起伏及變形之不良產生主要原 I56296.doc •16· 201230436 因’完全不受其影響而進行製造。 【圖式簡單說明】 圖1係表示第1實施形態之照明用有機EL元件之一個發光 元件的一例之概略平面圖； * 圖2(a)-(d)係說明第1實施形態之照明用有機el元件之製 ‘ 造方法之圖； 圖3係表示絕緣膜形成之一例之步驟圖； 圖4(a)-(c)係表示絕緣膜形成之一例之模式圖； 圖5係表示第2實施形態之照明用有機el元件之一個發光 元件的一例之概略平面圖； 圖6係圖5之（b)線之剖面圖； 圖7係通常之有機EL元件之一個發光元件之概略平面圖； 圖8係圖7之（a)線之剖面圖； 圖9係先前之圖案化加工之步驟圖；及 圖10係圖7之（b)線之剖面圖。 【主要元件符號說明】 1 基板 2 第1電極 ’ 3 有機發光層 . 4 第2電極 5 絕緣膜 6 單一喷嘴 7 有機用蒸鍍罩 8 第2電極用蒸鍍罩 156296.doc -17 -• S 12 201230436 Surface of board 1. Thereafter, an insulating material is applied to a specific portion of the substrate 1 on which the first electrode 2 is formed, and is hardened. The hardening method is appropriately selected in accordance with the insulating material to be used. Fig. 3 is a view showing a step of forming an insulating film in the case where a positive type resist is used as an insulating material. According to FIG. 3, the insulating film can be formed by the steps of cleaning, photoresist drawing (coating) and post-baking, and after the positive photoresist coating, the positive light is hardened only by heating (post-baked). It is made to be an insulating film 5. Since the insulating material is applied only in a specific portion, it is not necessary to perform the steps of baking, exposing, and developing when the insulating film is formed by the previous photolithography. The insulating material is in the non-contact side 4 (four) way (four). It is most suitable as a dispensing device which is applied in a non-contact manner and is a dot-like discharge type. As the spot type boring tool, for example, a jet book trademark manufactured by Axon can be used. The coating of the insulating material (4) corresponds to -===Γ. The size of the nozzle state is appropriately set. (4) For the insulating material of the light-emitting element of (4), the ideal material is: the edge material (photoresist), the medium inkjet is configured with a plurality of ink heads. The ink is an oil, and the adhesive which is used as the insulating material of the present embodiment has a higher viscosity. Further, since the ink jet system: the body is small in size, it is not suitable for the thickness of the left and right. Further, although the ink jet is applied to the entire surface of the substrate surface, it is applied to a line of less vertical and horizontal lines. However, in the case of the dispensing point of the ejector type, the first end of the single nozzle 6 faces the substrate 1 on which the first electrode 2 is formed, and the front end is not in contact. The single nozzle 6 is disposed in such a manner that the second electrode 2 is spaced apart. For example, it is preferable to arrange the single nozzle 6 at an interval of 0.1 mm to 1.0 mm from the surface of the first electrode 2 with respect to the edge portion (patterning step portion) of the first electrode 2. Next, the insulating material is intermittently ejected from the single nozzle 6 to a specific portion of the substrate 1 on which the first electrode 2 is formed. Further, the insulating material-surface is ejected to relatively move the substrate 1 or the single nozzle 6, whereby a continuous linear insulating film 5 can be formed in a specific portion. The amount of the insulating material to be ejected, the speed at which the substrate 丨 or the single nozzle 6 is moved, etc., take into consideration the wettability of the surface to be coated, the kind and viscosity of the insulating material, and the thickness and width of the insulating film 5 are required. Set it appropriately. Fig. 4 is a schematic view showing an example of formation of an insulating film. Fig. 4(a) shows the ejected particles of the insulating material ejected from the nozzle. The discharge amount is equivalent to 5 nL, and the diameter of the discharge particle is equivalent to 0.2 mn. When the discharge repetition speed is set to 2〇〇d〇t/sec and the moving speed is set to 1〇〇mm/sec, the spray is performed. The particles are applied to the substrate at intervals of 〇5 claws. Figure 4〇3) and Figure 4 ((〇 shows the case of the insulating material sprayed on the substrate. The sprayed insulating material is sprayed, as shown), as shown in Figure 4(c). The insulating film 5 having a thickness of 5 μm and a width of 2 mm is formed in a line shape. Although the width of the illumination is more than 1 mm square, the width is sufficient for the component, but by changing the discharge amount and the interval. (3) Fig. 2(c): Organic light-emitting layer forming step The substrate 经过 through the insulating film forming step is carried into a vacuum evaporation apparatus 156296.doc •14·201230436. The substrate 1 is covered with an organic material. Benzene, . Lamb plating cover 7, laminated organic material and organic light-emitting layer 3. The organic plating plate 7 for use in the organic machine is, for example, oriented in the direction of the line (a) of Figure 1 The surface of the 1 electrode 2 is equal to ΘΒ. The opening is larger than the surface of the first electrode 2. The surface of the electrode 2 is covered with the first electrode. The evaporation conditions of other organic materials are arbitrary. (4) Fig. 2(d): The second electrode forming step moves the substrate that has passed through the organic light emitting layer forming step! In the vacuum evaporation apparatus, the second electrode vapor deposition cover 8 is placed on the substrate 1, and the second electrode 4 is formed by laminating the base conductive material. The second electrode vapor deposition cover 8 is used, for example, in FIG. The line is larger than the first electrode 2 and has an opening smaller than the first electrode 2 in the direction of the line k(b). The vapor deposition conditions of the other conductive material are arbitrary. The second electrode is formed. After the step, a sealing member (not shown) is formed as appropriate. Further, in the present embodiment, the film is formed by vacuum-depositing the second electrode, but the film is not limited thereto, and may be formed by sputtering. [Second Embodiment] The organic EL device for illumination of the present embodiment has the same configuration as that of the first embodiment except that the specific portion of the insulating film is formed. Fig. 5 shows the organic organic for illumination of the present embodiment. A schematic plan view of an example of one of the light-emitting elements of the el element. The insulating film 5 of the present embodiment is provided in a region where the edge portion of the first electrode 2 intersects the surface of the second electrode 4 when the organic EL element is planarly viewed, and The surface of the first electrode 2 intersects the edge of the second electrode 4 In the region of the cross, that is, in addition to the patterning step portion of the first electrode 2 in which the organic light-emitting layer 3/second electrode 4 is laminated, when the second electrode 4 is formed, the organic light-emitting layer 3 is formed at 156296.doc 15 201230436 The insulating film 5 is formed in a portion corresponding to a portion where the vapor deposition cover 8 for the second electrode is likely to be contacted. Fig. 6 is a cross-sectional view taken along line (b) of Fig. 5. In Fig. 6, the insulating crucible is provided on the first electrode. In the flat portion of the second electrode, the second electrode vapor deposition cover 8 is used such that the end portion of the opening portion is placed over the insulating film 5. In this case, the second electrode evaporation cap 8 and the organic light-emitting layer 3 are used. The portion in contact with the non-light-emitting element portion is completed without damaging the organic light-emitting layer 3 in the light-emitting element. In the present embodiment, the insulating film is formed vertically and horizontally and continuously. When the coating condition of the insulating film 5 is set to the condition shown in FIG. 4, in the case of the light-emitting element of the (10) surface, it can be carried out for 4 seconds. The description of the insulating film 5 can be performed in one minute even if the main substrate is 15 chamfered. Further, in the case of using a large substrate, a plurality of single nozzles 6 may be disposed on the substrate so that a single nozzle 6 is disposed on one of the light-emitting elements, and the insulating film 5 may be simultaneously drawn in the plurality of light-emitting elements. Accordingly, the processing speed can be easily further improved. According to the first embodiment and the second embodiment described above, the photoresist film is directly applied to the portion to be directly formed without using the photolithography method, and the insulating film 5 can be formed only by baking. Therefore, in addition to the previous photolithography technology, the use of the insulating material can be reduced, and only the previous baking oven is used without new equipment. Further, by using the nozzle as a single axis and further using the substrate as a single axis, the variation program can instantaneously correspond to a variety of component sizes. Moreover, since it is not necessary to directly contact the substrate and transfer as in roll printing, it is possible to produce a main original I56296.doc •16·201230436 with respect to defects such as unevenness, undulation, and deformation of the substrate. Manufacturing. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic plan view showing an example of one light-emitting element of an organic EL element for illumination according to a first embodiment; FIG. 2(a)-(d) are views showing an organic organic for illumination according to the first embodiment. FIG. 3 is a view showing a step of forming an insulating film; FIG. 4 is a schematic view showing an example of forming an insulating film; and FIG. 5 is a second embodiment; FIG. 6 is a cross-sectional view of a light-emitting element of FIG. 5; FIG. 7 is a schematic plan view of one light-emitting element of a general organic EL element; FIG. Figure 7 is a cross-sectional view taken along line (a); Figure 9 is a front view of the patterning process; and Figure 10 is a cross-sectional view taken along line (b) of Figure 7. [Description of main component symbols] 1 Substrate 2 First electrode ’ 3 Organic light-emitting layer . 4 Second electrode 5 Insulating film 6 Single nozzle 7 Organic vapor deposition cover 8 Second electrode evaporation cover 156296.doc -17 -