TW201227169A - Mask, exposing method and exposure device - Google Patents

Abstract

A mask, an exposing method and an exposure device are provided. The mask includes a substrate. The substrate includes a mask element pattern, a first mask alignment pattern and a second alignment pattern. The first mask alignment pattern and the second alignment pattern are at different positions of a first direction and the same position of a second direction perpendicular to the first direction. The first mask alignment pattern and the second alignment pattern have a first gap distance between which. The mask element pattern has an outer edge having a maximum second gap distance between which. The first gap distance is greater than and equal to the second gap distance.

Description

201227169

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photomask, an exposure method, and an exposure apparatus, and more particularly to a photomask, an exposure method, and an exposure apparatus for exposing a flexible substrate. [Prior Art] With the rapid development of the soft electronics industry, flexible substrates have received increasing attention. Flexible substrates used in electrophoretic display (ECP) and liquid crystal display (LCD) devices are often exposed in a roll-to-roll manner. During the process of moving the substrate, the mask element pattern on the mask is simultaneously transferred onto the substrate coated with the photoresist layer to form a pattern of substrate elements sequentially arranged along the moving direction. However, a general exposure method is to adjust the distance between the movement rate of the substrate and the illumination time to control the spacing between the pattern of the substrate elements. This method leads to an error of more than 40 mils (mm). Therefore, it is impossible to precisely control the spacing between the pattern of the substrate elements. SUMMARY OF THE INVENTION Embodiments of the present invention relate to a photomask, an exposure method, and an exposure apparatus. The exposure method is low in cost and can accurately form a substrate pattern of good continuity. ι According to an embodiment of the invention, a reticle is proposed. The photomask includes a substrate. The substrate includes a mask element pattern, a first mask alignment pattern and a first mask alignment pattern. First reticle alignment pattern and second reticle alignment map 201227169 >

The TW6877PA case is located at a different position in a first direction and is located at the same position in a second direction. The first direction is perpendicular to the second direction. There is a first distance between the first mask alignment pattern and the second mask alignment pattern. The mask element pattern has a maximum second distance in the first direction. The first distance system is greater than or equal to the second distance. According to an embodiment of the present invention, an exposure method is also proposed. The exposure method includes the following steps. A substrate is provided. The substrate is flexible and has a photoresist layer applied over it. A reticle is provided. The photomask includes a substrate. The substrate includes a mask element pattern, a first mask alignment pattern and a second mask alignment pattern. The first reticle alignment pattern and the second reticle alignment pattern are located at different positions in a first direction and are located at the same position in a second direction. The first direction is perpendicular to the second direction. The first mask alignment pattern has a first distance from the second mask alignment pattern, and the mask element pattern has a maximum second distance in the first direction. The first distance system is greater than or equal to the second distance. Performing a first exposure step of transferring the mask element pattern, the first mask alignment pattern and the second mask alignment pattern onto the substrate to form a first substrate element pattern, a first substrate, respectively The second two-substrate alignment pattern of the alignment pattern. The substrate is moved in the first direction and the second substrate alignment pattern corresponds to the first mask alignment pattern. Performing a second exposure step to transfer the mask element pattern, the first mask alignment pattern and the second mask alignment pattern onto the substrate to respectively serve a second substrate element pattern, a second substrate The alignment pattern is aligned with a fourth substrate. The second substrate alignment pattern corresponds to the third substrate alignment pattern. According to an embodiment of the invention, an exposure apparatus is also proposed. The exposure device includes a photomask, a light source, a set of unwinders and a winder and a pair of inspections 201227169

Ding W6877PA - device. The photomask includes a substrate. The substrate includes a first-mask alignment pattern and a second army: a pattern, a pattern, and a second mask alignment map. The photomask is aligned in the second direction. First: Two:: The location. The first direction is vertical with - the first two == and the second mask between the alignment patterns - the Puss heart pattern is outside the first direction and has

The system is used for the distance between the same distance and the second distance; the source ', 70 ox® case, the first reticle alignment @ case * the second well :: the pattern is transferred to the substrate to form a "substrate" - The component diagram is scratched: =, a second substrate alignment pattern. Substrate system ==: direction movement. The alignment inspection device = the hood alignment pattern corresponds to the second substrate alignment pattern. The above-described objects, features, and advantages of the present invention will be described in detail below with reference to the accompanying drawings, and the details are as follows: [Embodiment] - Figures 1 to 3 depict one embodiment Exposure method. Figure 4 depicts the reticle used in the non-embodiment. Referring to the figure, in an embodiment, the apparatus 10 can include a reticle 2, a light source 14, and a group unwinder 8 and a rewinder 12. The photomask 2 includes a substrate 4. The base 4 includes, for example, a mask element pattern and a different first-mask alignment pattern 3, a second mask alignment pattern 5, a second mask alignment pattern 7, and a fourth mask alignment pattern 9. Referring to FIG. 4, the first mask alignment pattern 3 and the third mask alignment pattern 7 may be located in the second mask alignment pattern 5 and the fourth mask alignment pattern 9 201227169

Between the TW6877PA and the mask element pattern 1. For example, the first reticle alignment pattern 3 and the second reticle alignment pattern 5 may be located at different positions in the X direction and at the same position in the Y direction perpendicular to the X direction. The first reticle alignment pattern 3 and the second reticle alignment pattern 5 have a first distance D1. The outer edge of the mask element pattern 1 has a maximum second distance D2 in the X direction. The first distance D1 is preferably greater than or equal to the second distance D2. The third mask alignment pattern 7 and the fourth mask alignment pattern 9 may also be located at different positions in the X direction and at the same position in the Y direction. The third mask alignment pattern 7 and the fourth mask alignment pattern 9 have a third distance D3 therebetween. The third distance D3 may be equal to the first distance D1. Referring to Fig. 4, the first mask alignment pattern 3 and the third mask alignment pattern 7 may be located at the same position in the X direction. The first mask alignment pattern 3 and the third mask alignment pattern 7 may have a fourth distance D4. The second mask alignment pattern 5 and the fourth mask alignment pattern 9 may be located at the same position in the X direction. The second mask alignment pattern 5 and the fourth mask alignment pattern 9 may have a fifth distance D5. The fourth distance D4 may be equal to the fifth distance D5. Referring to FIG. 1 , for example, a first exposure step is performed, and the photomask element pattern 1 , the first mask alignment pattern 3 , the second mask alignment pattern 5 , and the third mask pair are performed by the light source 14 . The bit pattern 7 and the fourth mask alignment pattern 9 are transferred onto the substrate 6 having the photoresist layer and being flexible to form the first substrate element pattern 11 and the first substrate alignment pattern 13, respectively. The two substrate alignment patterns 15, the fifth substrate alignment pattern 17 and the sixth substrate alignment pattern 19. The photoresist layer can be formed in a coating manner. The photoresist layer of the substrate 6 can also be formed by press bonding. Light source 14 can include an ultraviolet light source. 201227169

TW6877PA Referring to Fig. 2, the substrate 6 is moved in the X direction by the unwinder 8 and the winder 12. Further, the registration inspection device 16 of the exposure device 10 is moved over the first mask alignment pattern 3 to check whether the second substrate alignment pattern 15 is moved to correspond to the first mask alignment pattern 3. The registration inspection device 16 can also be moved over the third reticle alignment pattern 7 to check whether the sixth substrate alignment pattern 19 has moved to correspond to the third reticle alignment pattern 7. In the embodiment, the alignment inspection devices 16 located above and below are simultaneously aligned. The registration inspection device 16 includes, for example, a charge engaging element (CCD) image capturing lens. In the embodiment, the first mask alignment pattern 3 is determined to correspond to the second substrate alignment pattern 15 by the alignment inspection device 16, or the third mask alignment pattern 7 corresponds to the sixth substrate pair. After the bit pattern 19, a second exposure step is performed, and the photomask element pattern 1, the first mask alignment pattern 3, the second mask alignment pattern 5, and the third mask alignment pattern 7 are first used by the light source 14. The four mask alignment patterns 9 are transferred onto the substrate 6 to form the second substrate member pattern 21, the third substrate alignment pattern 23, and the fourth substrate alignment pattern 25 as shown in FIG. 3, respectively. The seventh substrate alignment pattern 27 and the eighth substrate alignment pattern 29. Referring to FIG. 3, the second exposure step determines that the first mask alignment pattern 3 corresponds to the second substrate alignment pattern 15, or the third mask alignment pattern 7 corresponds to the sixth substrate. After the alignment pattern 19 is performed, the third substrate alignment pattern 23 thus formed corresponds to the second substrate alignment pattern 15, or the seventh substrate alignment pattern 27 corresponds to the sixth substrate alignment pattern 19 . The minimum distance D6 between the first substrate element pattern 11 and the second substrate element pattern 21 is equal to the first distance D1 (Fig. 4) minus the second distance 201227169

TW6877PA D2, or may be equal to the third distance D3 minus the second distance D2. Therefore, the first distance D1 (or the third distance D3) and the second distance D2 can be adjusted to precisely control the minimum distance D6 between the first substrate element pattern 11 and the second substrate element pattern 21 to obtain A continuous pattern of components. In some embodiments, the first substrate element pattern 11 and the second substrate element pattern 21 are precisely controlled to have almost no gaps and do not overlap each other (the minimum distance D6 is about zero). In other embodiments, the minimum distance D6 between the first substrate element pattern 11 and the second substrate element pattern 21 is precisely controlled to be a micron (μιη) grade size. The exposure method of the embodiment of the present disclosure is simple and can be accurately transferred to form a pattern of good continuity. The exposure method uses a single reticle and is therefore low cost. In other embodiments, a reticle 52 as shown in FIG. 5 is used. The difference between the mask 52 of FIG. 5 and the mask 2 of FIG. 4 is that the mask element pattern 51 of the mask 52 is located in the first mask alignment pattern 53, the second mask alignment pattern 55, and the third. Between the reticle alignment pattern 57 and the fourth reticle alignment pattern 59. Referring to Fig. 5, for example, the first mask alignment pattern 53 and the second mask alignment pattern 55 may be located at different positions in the X direction and at the same position in the x direction. The first mask alignment pattern 53 and the second mask alignment pattern 55 have a first distance D51 therebetween. The outer edge of the mask element pattern 51 has a maximum second distance D52 in the X direction. The first distance D51 is preferably greater than or equal to the second distance D52. The third mask alignment pattern 57 and the fourth mask alignment pattern 59 may also be located at different positions in the X direction and at the same position in the x direction. Third mask alignment pattern 57 201227169

The .TW6877PA has a third distance D53 between the fourth mask alignment pattern 59. The third distance D53 may be equal to the first distance D51. Referring to Fig. 5, the first mask alignment pattern 53 and the third mask alignment pattern 57 may be located at the same position in the X direction. The first reticle alignment pattern 53 and the third reticle alignment pattern 57 may have a fourth distance D54. The second mask alignment pattern 55 and the fourth mask alignment pattern 59 may be located at the same position in the X direction. The second mask alignment pattern 55 and the fourth mask alignment pattern 59 may have a fifth distance D55. The fourth distance D54 • can be equal to the fifth distance D55. Fig. 6 is a view showing a portion of the reticle used in an embodiment having a reticle alignment pattern. Fig. 7 is a view showing the alignment pattern of the substrate formed by the reticle alignment pattern of the reticle of Fig. 6 transferred to the substrate. Referring to Fig. 6, the first mask alignment pattern 1〇3 of the substrate 104 of the mask 1 包括2 includes a light-transmitting region 2〇] and the opaque sub-patterns 202 and 203. The light transmitting region 201 surrounds the periphery of the sub-patterns 202, 203. The second reticle alignment pattern 1 〇 5 includes sub-patterns 204, 205, 206. The second mask alignment pattern 1〇7 includes a light-transmitting region 3〇1 and opaque sub-patterns 302 and 3〇3. The light transmitting region 301 surrounds the periphery of the sub-patterns 302, 303. The fourth mask alignment pattern 丨〇9 includes sub-patterns 3〇4, 305, 306. Referring to FIG. 6, since the first reticle alignment pattern ι〇3 and the third reticle alignment pattern 107 respectively include the light-transmitting regions 2〇1, 3〇, the alignment inspection device such as a charge coupled device is used. CCD) When the image capturing lens is aligned (refer to the description of FIG. 2), the first mask alignment pattern 103 and the third mask alignment pattern 1 can be observed through the light transmitting regions 2〇1, 3〇1. Is the 〇7 corresponding to the second substrate alignment pattern ιΐ5 (including the sub-patterns 214, 215, 216) formed on the substrate 106 and the sixth substrate alignment pattern 119 (including the sub-pattern 201227169)

TW6877PA 314, 315, 316), and then after exposure (refer to the description of FIG. 3), a pattern as shown in FIG. 7 is formed, wherein the third substrate alignment pattern 123 (including the sub-patterns 212, 213) and The seventh substrate alignment pattern 127 (including the sub-patterns 312, 313) corresponds to the second substrate alignment pattern 115 and the sixth substrate alignment pattern 119, respectively. In a specific embodiment, the exposing step performed after the alignment causes the second substrate alignment pattern 115 and the sixth substrate alignment pattern 119 to be exposed and disappeared, so that only the third substrate pair exists after the exposure. The bit pattern 123 and the seventh substrate alignment pattern 127. In the embodiment of the present disclosure, the exposure method uses a single mask and is therefore low in cost. The minimum distance between the first substrate element pattern and the second substrate element pattern transferred onto the substrate may be by the first reticle alignment pattern (or the third light) of the modulation reticle at the same position in the Y direction a first distance (or a third distance) between the hood alignment pattern and the second reticle alignment pattern (or the fourth reticle alignment pattern), and the outermost edge of the reticle element pattern in the χ direction The second distance is controlled. The spacing between the first substrate element pattern and the second substrate element pattern can be controlled below the micron size. Therefore, a pattern of a substrate element having good continuity can be accurately formed. While the present invention has been described above in terms of the preferred embodiments thereof, the present invention is not intended to limit the invention, and the invention may be modified and modified without departing from the spirit and scope of the invention. The protection fc is subject to the definition of the patent application scope attached. BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1 to 3 illustrate an exposure method of an embodiment. Figure 4 is a green view - a reticle used in the examples. 201227169

, TW6877PA Figure 5 illustrates a reticle used in an embodiment. Fig. 6 is a view showing a portion of the reticle used in an embodiment having a reticle alignment pattern. Fig. 7 is a view showing the alignment pattern of the substrate formed by the reticle alignment pattern of the reticle to the substrate. [Description of main component symbols] 1, 51: reticle component pattern # 2, 52, 102: reticle 3, 53, 103: first reticle alignment pattern 4, 104: substrate 5, 55, 105: second light Cover alignment pattern 6, 106: substrate 7, 57, 107: third mask alignment pattern 8: unwinder 9, 59, 109: fourth mask alignment pattern • 10: exposure device 11: first base Material element pattern 12: rewinder 13: first substrate alignment pattern 14: light source 15, 115 · second substrate alignment pattern 16: alignment inspection device 17: fifth substrate alignment pattern 19, 119 : sixth substrate alignment pattern 11 201227169

TW6877PA 21 : second substrate element pattern 23 , 123 : third substrate alignment pattern 25 : fourth substrate alignment pattern 27 , 127 : seventh substrate alignment pattern 29 : eighth substrate alignment pattern 201 301: light-transmitting regions 202, 203, 204, 205, 206, 212, 213, 214, 215, 216, 302, 303, 304, 305, 306, 312, 313, 314, 315, 316: sub-patterns

Dl, D51: first distance D2, D52: second distance D3, D53: third distance D4, D54: fourth distance D5, D55: fifth distance D6: distance • 12

Claims (1)

201227169, TW6877PA VII. Patent application scope: L A reticle includes: · The substrate 'includes a reticle component pattern, and a second reticle alignment pattern, the first-light dish oblique f-first hood alignment pattern cover The alignment pattern is located at a position between the vertical pattern and the second light second direction, and is located in a direction of the first reticle alignment pattern straight to the second side > The fear of the 11 pattern is outside the first direction and has the largest first distance, and the first distance is greater than 2. The patent application scope is the first! The splicing alignment pattern described in the item is different from the second reticle alignment pattern. The first light 3. The reticle of claim i, wherein the visor alignment pattern is located between the second and the circumstance. The dry alignment pattern and the reticle component diagram 4. The _ piece pattern described in the scope of the patent application is located between the opaque masks. The pattern and the second reticle alignment map include the reticle of the first item, wherein the substrate is further reticle the needle cover aligning pattern and the fourth reticle alignment pattern, the third and the The fourth mask alignment pattern is located between the first-direction distances, and an exposure method includes: providing a substrate, the substrate is flexible, and is coated with a photoresist 13 201227169 TW6877FA layer; Providing a reticle, the reticle comprising a substrate, the substrate comprising a reticle component pattern, a first reticle alignment pattern and a second reticle alignment pattern, the first reticle alignment pattern and the first The two reticle alignment patterns are located at different positions in a first direction and are located at the same position in a second direction, the first direction being perpendicular to the second direction, the first reticle alignment pattern and The second mask has a first distance between the alignment patterns, and the outer edge of the mask element pattern has a maximum second distance in the first direction, the first distance being greater than or equal to the second distance; · performing a first exposure step to the mask element The pattern, the first mask alignment pattern and the second mask alignment pattern are transferred to the substrate to form a first substrate element pattern, a first substrate alignment pattern and a second substrate, respectively. a pattern of alignment; moving the substrate along the first direction and causing the second substrate alignment pattern to correspond to the first mask alignment pattern; and performing a second exposure step to light the light The mask element pattern, the first mask alignment pattern and the second mask alignment pattern are transferred onto the substrate to respectively form a second substrate element pattern, a third substrate alignment pattern and a first a four-substrate alignment pattern, wherein the second substrate alignment pattern corresponds to the third substrate alignment pattern. 7. The exposure method of claim 6, wherein a minimum distance between the first substrate element pattern and the second substrate element pattern is equal to the first distance minus the second distance. 8. The exposure method of claim 6, wherein: the substrate further comprises a third mask alignment pattern and a fourth mask pair 14 201227169 .TW6877PA bit pattern, the third mask alignment In the position of the current ^^, _ and the four-shirt alignment, the third mask is the same as the bitmap, and the fourth mask is the same and the right n is the fourth mask alignment pattern. The first distance is equal to the first distance; the fourth pair further includes transferring the third mask alignment pattern and the fourth mask pair map to the substrate ± material alignment pattern And a sixth substrate pair bitmap; / into a fifth basis = the second exposure step further comprises: the third mask alignment pattern fish the substrate is divided into seven. The seventh base pattern corresponds to the sixth base Material alignment pattern.帛 Substrate alignment 9. An exposure skirt, comprising: -^ 'The reticle includes a base body, the base body includes a reticle component military alignment pattern and a second reticle alignment pattern, the first hood pair The bit pattern and the second reticle alignment pattern are located on a first side; and are disposed at the same position in a second direction, the first direction being perpendicular to the first side and the first Between the alignment® case and the hood alignment pattern, having a first-distance, the reticle element pattern is greater than or equal to a second distance at which the second distance is greater than the second distance 'the first-distance source' is used for the reticle The component pattern, the first mask alignment mask (4) is moved to the substrate to form a solid: a pattern, a first substrate alignment pattern and a second substrate alignment pattern The substrate is flexible and coated with a photoresist layer thereon; a group unwinder and a winder for moving the substrate along the first direction 15 201227169 TW6877PA; and a pair of position inspection devices, And a method for checking whether the first mask alignment pattern corresponds to the second substrate alignment pattern. 10. The exposure apparatus of claim 9, wherein after the first reticle alignment pattern is inspected by the alignment inspection device to correspond to the second substrate alignment pattern, the light source is used The mask element pattern, the first mask alignment pattern and the second mask alignment pattern are transferred to the substrate to form a second substrate element pattern, a third substrate alignment pattern and a a fourth substrate alignment pattern, wherein the second substrate alignment pattern corresponds to the third substrate alignment pattern.