TW201224382A - Rack for firing - Google Patents

Rack for firing Download PDF

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Publication number
TW201224382A
TW201224382A TW100126136A TW100126136A TW201224382A TW 201224382 A TW201224382 A TW 201224382A TW 100126136 A TW100126136 A TW 100126136A TW 100126136 A TW100126136 A TW 100126136A TW 201224382 A TW201224382 A TW 201224382A
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Taiwan
Prior art keywords
frame
sic
vertical
mounter
flat
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TW100126136A
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Chinese (zh)
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TWI528013B (en
Inventor
Tsuneo Komiyama
Hiroyuki Hotta
Nobuhiro Matsumoto
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Ngk Insulators Ltd
Ngk Adrec Co Ltd
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Publication of TW201224382A publication Critical patent/TW201224382A/en
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Publication of TWI528013B publication Critical patent/TWI528013B/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/003Apparatus, e.g. furnaces
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/56Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides
    • C04B35/565Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide
    • C04B35/573Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbides or oxycarbides based on silicon carbide obtained by reaction sintering or recrystallisation
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D5/00Supports, screens, or the like for the charge within the furnace
    • F27D5/0031Treatment baskets for ceramic articles
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D5/00Supports, screens, or the like for the charge within the furnace
    • F27D5/0037Supports specially adapted for semi-conductors
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10Sintering only
    • B22F2003/1042Sintering only with support for articles to be sintered
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38Non-oxide ceramic constituents or additives
    • C04B2235/3852Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
    • C04B2235/3873Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/42Non metallic elements added as constituents or additives, e.g. sulfur, phosphor, selenium or tellurium
    • C04B2235/428Silicon
    • CCHEMISTRY; METALLURGY
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    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/77Density
    • CCHEMISTRY; METALLURGY
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    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80Phases present in the sintered or melt-cast ceramic products other than the main phase
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
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    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9607Thermal properties, e.g. thermal expansion coefficient
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9607Thermal properties, e.g. thermal expansion coefficient
    • C04B2235/9623Ceramic setters properties
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/963Surface properties, e.g. surface roughness
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27FURNACES; KILNS; OVENS; RETORTS
    • F27DDETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D5/00Supports, screens, or the like for the charge within the furnace
    • F27D2005/0081Details

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Furnace Charging Or Discharging (AREA)
  • Ceramic Products (AREA)

Abstract

Provided is a rack for firing which holds a plurality of flat board-like setters at multiple levels in the perpendicular direction by means of a setter holding means, and fires electronic ceramic elements at multiple levels. The setter holding means is composed of a material composed of Si-SiC containing 0.01-30 % of Si or recrystallized SiC or Si3N4-SiC, and the setter holding means holds each of the flat board-like setters with 70-100 % of the outer circumferential side surface thereof exposed. Consequently, the rack has excellent energy efficiency, mass-production efficiency, and uniform heating characteristics at each of the multiple levels in the multiple-level firing.

Description

201224382 四、指定代表圖: (一) 本案指定代表圖為:第(2)圖。 (二) 本代表圖之元件符號簡單說明: LI、L2〜外周側面長度; s〜角部垂直支柱的寬度; 卜中間垂直支柱的寬度。 的化學式: 五、本案若有化學式時,請揭示最能顯示發明特徵 無。 六、發明說明: 【發明所屬之技術領域】 本發明係主要有關於適合電子陶瓷元件 燒冶用框架。 夕·^燒冶的 【先前技術】 添加燒結助劑或成形助劑:之陶瓷的微粉 元件,將該未燒冶元件… 利用成形作成未燒 製的板並裝入燒冶爐,—面將爐内=(—陶 氣體條件-面燒冶所製造。 :U既定溫度與環 用,作為將各個空間形成 例如如第9圖所示,揭 8形成於上面周邊的托盤 安裝器一般堆疊複數段後使 於重疊複數段安裝ϋ之間的構造 示將使平板狀安裝器與將突起部 201224382 嵌合者逐漸堆疊的構造(專利文獻〗)。此外,亦已知將以 確保可承受段维疊之強度之方式所形成的周壁部形成於安 裝器本身之上面周彡:作成盤狀,再將該盤狀安裝器疊層 的構造(專利文獻2)。 可是’如第9圖所示,在將安裝器完全嵌入托盤的構 :中’安裝器的外周側面被托盤所覆蓋。而且,在將安農 器逐漸進行段堆疊的情況,不僅爐内氣體的流動受到突起 部8的阻礙,而且最下段之安裝器的下面整個面直接或經 由托盤與爐體接觸,因為承受來自爐體之導熱的影響大, 所以在各段之均敎化孫田能 ,, 實施熱處理的電;陶段之安裝器被 <的電子陶是兀件與在上段被實 陶究元件相比,具有製品良率差的問題。 的電子 周圍二在:專且:文獻2所示將盤狀安裝器逐漸段堆疊於 礙,而二確"承不僅爐内氣體的流動受到周壁部的阻 部相對安=::=::度…所形成_ 效率之高效率化二"或體積妨礙能量效率或量產 [專利文獻] [專利文獻1 ]曰本特 [專利文獻2 ]曰本特 開2000 ~~ 74571號公報 開2009 — 227527號公報 【發明内容】 【發明所欲解決之課題】 因此’本發明之目的 ,該燒 、在於提供一種燒冶用框架 201224382 冶用框架係解決上述之以往的問題點,在對電子陶究元件 進仃多段燒冶時在能量效率或量產效率優異,而且在多段 燒冶之各段的均熱性優異。 【解決課題之手段】 為了解決上述之課題所開發之本發明的燒冶用框架, 係利用安裝器保持手段在垂直方向多段地保持複數片平板 狀安裝器’其特徵在於:該安裝器保持手段係由含有 0.0卜30%之 Si 的 Si-Sic、再結晶 Sic& Si3N4—Sic 的任 一種材質所構成,該安裝器保持手段係在使各平板狀安裝 器露出其外周側面之70〜100%之狀態下保持。 、 申請專利範圍第2項之發明的特徵在於:在申請專利 範圍第1項之燒冶用框架,安裝器保持手段具有:複數支 垂直支柱,係具備安裝器保持機構;下端支撐框,係支撐 該垂直支柱的下端部;及上端支樓框,係支樓該垂直支柱 的上端部;該安裝器保持機構由在垂直支柱之内側面所形 成的複數個凹部或凸部、或者架在隔著平板狀安裝器相向 之垂直支柱間之樑的至少任一個所構成,如申請專利範圍 第3項之記載所示’亦可作成垂直支柱由構成其四角落之 垂直邊的角部垂直去知、^ 垂直配置於該角部垂直支柱間 的中間垂直支柱所構成。 申4專利圍第4項之發明的特徵在於:在申請專利 範圍第1項之燒冶用框架,安裝器保持手段由在周邊部具 f又唯且用大起之框狀的平板構件所構成,在使1 保持平板狀安裝器之狀態多段地疊層。 ^201224382 IV. Designated representative map: (1) The representative representative of the case is: (2). (2) The symbol of the symbol of this representative figure is briefly described: LI, L2~ the length of the outer peripheral side; s~ the width of the vertical pillar of the corner; the width of the vertical pillar in the middle. The chemical formula: 5. If there is a chemical formula in this case, please reveal the characteristics that can best show the invention. VI. Description of the Invention: [Technical Field to Which the Invention Is Alonged] The present invention relates to a frame suitable for the firing of an electronic ceramic component. [Previous technique] Adding a sintering aid or a forming aid: a micro-powder element of a ceramic, the un-melted element is formed into an unfired plate and placed in a baking furnace, In-furnace = (-ceramic gas condition - surface-melting machine. : U set temperature and ring, as the space is formed, for example, as shown in Fig. 9, the tray mounter formed on the upper periphery is generally stacked in multiple sections The configuration between the overlapping plurality of mounting brackets will be such that the flat mounter and the fitting portion 201224382 are gradually stacked (Patent Document). Further, it is also known to ensure the endurance of the stack. The peripheral wall portion formed in the manner of the strength is formed on the upper surface of the mount itself: a structure in which the disc-shaped mount is laminated in a disk shape (Patent Document 2). However, as shown in Fig. 9, The installation device is completely embedded in the structure of the tray: the outer peripheral side of the installer is covered by the tray. Moreover, in the case where the ampoule is gradually stacked, not only the flow of the gas in the furnace is hindered by the protrusion 8, but also Lower section The entire lower surface of the installer is in contact with the furnace body directly or via a tray. Since the influence of heat conduction from the furnace body is large, the heat treatment is performed in each section, and the heat treatment is performed; the installer of the pottery section is < The electronic pottery is a problem that has a poor yield of the product compared with the actual ceramic component in the upper section. The surrounding of the electronic is two: special: as shown in the literature 2, the disc-shaped mounter is gradually stacked, And the second is that the flow of gas in the furnace is not formed by the resistance of the peripheral wall relative to the ==::=:: degree _ efficiency is high efficiency two or "volume hinders energy efficiency or mass production [Patent Literature [Patent Document 1] 曰 特 [ [Patent Document 2] 曰 特 2000 2000 ~ ~ ~ ~ ~ 2000 2000 2000 2000 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 — — Burning is to provide a frame for burning 201224382. The frame for metallurgy solves the above-mentioned problems. It is excellent in energy efficiency or mass production efficiency when it comes to multi-stage cooking of electronic ceramic components, and it is used in various stages of sintering. Excellent heat soluness of the segment [Means for Solving the Problem] In order to solve the above-described problem, the frame for firing according to the present invention is a plurality of flat plate-shaped mounters that are held in a plurality of stages in the vertical direction by the mounter holding means. The means is composed of any material of Si-Sic containing 0.048% Si, and recrystallized Sic & Si3N4-Sic, and the mounter retaining means is such that each flat-shaped mounter exposes 70~100 of its outer peripheral side. The invention of claim 2 is characterized in that: in the frame for the burning of the first application of the patent scope, the installer retaining means has: a plurality of vertical pillars, and an installer holding mechanism; a lower end support frame supporting a lower end portion of the vertical support; and an upper end support frame, which is an upper end portion of the vertical support; the mount retaining mechanism is formed by a plurality of concave portions or convex portions formed on an inner side surface of the vertical support Or the frame is formed by at least one of the beams between the vertical pillars facing each other across the flat-shaped mounter, as shown in the third item of the patent application. Also creating vertical post constituted by four vertical corners of the corner portions of the vertical side to know, ^ perpendicularly disposed in the corner portion between the intermediate vertical post constituted vertical support. The invention of claim 4 of claim 4 is characterized in that, in the frame for melting of the first application of the patent application, the holder holding means is constituted by a flat member having a frame shape in the peripheral portion and having a large frame. It is laminated in a plurality of stages in a state in which 1 is held by a flat mounter. ^

S 4 201224382 申請專利範圍第5項之發明S 4 201224382 Invention of claim 5

货3的特徵在於:在申請專利 範圍第1項之燒冶用框架, 月寻J ^ ^ ^ 保持手段由具備複數個 •k堆豐用大起並相對向配置的— 了罝線構件、及架在各段 堆疊用突起之上部凹面間的樑所 ^ 4* V. - , 苒成在將平板狀安裝器 保持於这些樑之上的狀態多段地疊層。 此外,在構成安裝器保持 又的構件由含有〇.〇1〜30% 之Si的Si —SiC所構成的情況, ^ nnn · 且具化學成分係SiC : 70〜99/、Si : 1 〜30%,將 SiC+ Si 設為]nn〇/ 馮100%,進而含有A1 : 0. 01-0. 2% ' Fe : 0. Ol^o. 2% . ca : Π m π r ^ η _ . ;1〜0. 2%。如申請專利 摩巳圍第11項之圮載所示,宜平板 U1.之…—SlC。 ·的材質亦是含有 在構成安裝器保持手段的構件由再結晶S1 成的情況,宜其化學成分係SiC . qq 1ηΛη 99〜100% ,將 Sic 設The characteristics of the goods 3 are: in the frame of the burning of the first scope of the patent application, the monthly search J ^ ^ ^ maintenance means is provided by a plurality of k-rich piles and relatively arranged - the twisted line members, and The beam is placed between the concave portions of the upper portions of the stacking projections, and is stacked in a plurality of stages in a state in which the flat-plate mounter is held on the beams. Further, in the case where the member constituting the mounter is made of Si-SiC containing 1 to 30% of Si, ^ nnn · and has a chemical composition of SiC: 70 to 99 /, Si : 1 to 30 %, SiC+ Si is set to ]nn〇/ von 100%, and further contains A1 : 0. 01-0. 2% ' Fe : 0. Ol^o. 2% . ca : Π m π r ^ η _ . 1~0. 2%. If the application for patents is shown in the 11th item of Capricorn, it should be flat U1....SlC. The material is also included in the case where the member constituting the holder holding means is formed by recrystallization S1, and the chemical composition thereof is SiC. qq 1ηΛη 99 to 100%, and Sic is set.

100% ’ 進而含有 A1 : 〇.〇卜〇.2%、F re* 〇.〇1~〇 2% 'fa- 0.0卜0.2%。 ·。U. 又,在構成安裝器保持手段的構 η丹旰 φ SuN4 — Sic 成的情況,宜其化學成分係Sic: 7 Ου/〇、Si3N4 : 20〜30%, 將SiC+Si3N4設為1〇〇%,進而合右 A1 : 〇. 1 〜0.5%、Fe· 〇. 1~0. 5%、Ca : 0. 0卜〇. 2%。 · 【發明效果】 本發明的燒冶用框架係利用由冬 J用由3有〇. 01〜30%之以沾 安裝器保持手段,在使複數片平板狀安壬^材質所構成的 面之_議之狀態下保持二= = = ;;其外周側 質所構成之安裝器 201224382 保持手段與一般所使用之氧化鋁等相比,因為熱輻射率 大,而且使平板狀安裝器之外周側面的7(M〇⑽露出,所 =:=:安裝器上的電子陶究元件迅速地傳達爐内的 m皿度。因此’在多段燒冶之各段的均熱性優異。 又’由這些材質所構成之安裝器保持手段與一般所使 用之氧化鋁等相比,在高溫條件下的強度大,因強度婵大 的量而可小型輕量化。因此,在對電子陶究元件進行多曰段 燒/Π時,在能量效率或量產效率優異。 又’雖然在以往一面以突起部將空間形成於各安裝100% ' and then A1 : 〇.〇卜〇.2%, F re* 〇.〇1~〇 2% 'fa- 0.0 Bu 0.2%. ·. U. In the case of the structure η 旰 旰 SuN4 — Sic constituting the holder holding means, the chemical composition is Sic: 7 Ου / 〇, Si3N4 : 20 to 30%, and SiC + Si3N4 is set to 1 〇 〇%, and then right A1 : 〇. 1 ~ 0.5%, Fe· 〇. 1~0. 5%, Ca: 0. 0 〇. 2%. [Effect of the Invention] The frame for the smelting of the present invention is used for the surface of the slabs of the slabs of the slabs of the slabs of the slabs. _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 7 (M〇(10) is exposed, ===: The electronic chemistry component on the mounter quickly conveys the m-degree of the furnace. Therefore, 'the heat uniformity of each section of the multi-stage firing is excellent. The mounter holding means has a higher strength under high temperature conditions than aluminum oxide or the like which is generally used, and can be reduced in size and weight due to the large amount of strength. Therefore, the electronic ceramic component is multi-staged. When burning or simmering, it is excellent in energy efficiency or mass production efficiency. In addition, the space is formed in each of the protrusions in the past.

器’-面將複數段安裝器逐漸進行段堆疊的情況,且有J 確保可承受段堆疊之強度之方式所形成的突起部所佔的重 量或體積妨礙能量效率或量產效率之高效率化的問題,伸 ^申請專利範圍第2項之燒冶用框架係具備安裝器保持機 構的構造,而該安裝器保持機構係具有:複數支垂直支柱、 支撐該垂直支柱之下端部的下端支撑框、及支揮該垂直支 柱之上端部的上端支揮框,並在垂直方向多段地保持於複 數片平板狀安裝器’不需要確保可承受段堆疊之強度之方 =形成的突起部’與以往相比,可使能量效率或量產效 率向效率化。 。。又冑然在以在一面以突起部將空間形成於各安 益®將複數丰又女裝器逐漸進行段堆疊的情況,最下: 之安裝器的下面整個面直接或經由托盤與爐體接觸,因; ^受來自爐體之導熱的影響大,所以例如在最下段之安震 器被實施熱處理的電子陥垄_ 电于陶件與在上段被實施熱處理的The '-face is the case where the plurality of stages of the installer are gradually stacked, and the weight or volume occupied by the protrusion formed by the J to ensure the strength of the stage stack hinders the efficiency of energy efficiency or mass production efficiency. The problem is that the frame for the burning of the second application of the patent scope has the structure of the holder holding mechanism, and the holder holding mechanism has a plurality of vertical pillars and a lower end support frame supporting the lower end of the vertical pillar. And the upper end support frame that supports the upper end portion of the vertical strut, and is held in a plurality of stages in the vertical direction in a plurality of flat plate-shaped mounters, 'there is no need to ensure the strength of the stacking of the stacks = the formed protrusions' In comparison, energy efficiency or mass production efficiency can be made more efficient. . . In addition, in the case where the space is formed by the protrusions on one side, and the plurality of women's devices are gradually stacked, the bottom: the entire lower surface of the mounter is in contact with the furnace body directly or via the tray. Because of the large influence of heat conduction from the furnace body, for example, in the lowermost stage, the shock absorber is subjected to heat treatment, and the heat treatment is performed on the ceramic part and the heat treatment in the upper stage.

S 201224382 電子陶瓷元件相比,具有製品良率差等在各段之均熱化係 困難的問題,但是若依據申請專利範圍第2項之發明的燒 /口用忙架,在最下段之女裝器的下部面與爐體之間亦形成 空間,降低來自爐體之導熱的影f,而且該安裝器保持機 構使各平板狀安裝器之外周侧面的70〜100%從各垂直支柱 之間露出。因& ’對燒結有害之黏合劑分解氣體的排出等 爐内氣體的流動難受到阻礙’因為對構成各段之安裝器的 導熱變得更均勻,所以可實現在各段的均熱化。 —右依據申請專利範圍第3項之發明,可更穩定地保持 安裝器又,尤其右依據將樑架在中間垂直支柱間的構成, 因為經由該樑料段之安裝器的中央部進行導熱,所以可 實現與受到來自角部垂直支柱之導熱的影響之安裝器的邊 緣部之均熱化。 * 1 ^ 之框狀的平 狀態多段地 量變小,而 效率或量產 段燒冶之各 採用安裝器 配置的一對 間的樑所構: 狀態多段地 若依據申請專利範圍帛4項之發明,因為 '、寺手&由在周邊部具備複數個段堆疊用突起 板構件所構成,並在使其保持平板狀安裝器之 疊層的構成,所以可使安裝器保持手段的熱容 在對電子陶竟元件進行多段燒冶時可提高能量 效率又,在與爐内氣體的接觸性優異,在多 段的均熱性優異。 若依據申請專利範圍第5項之發明,因為 =持手段由具備複數個段堆㈣突起並相對向 :線構件、及架在各段堆疊用突起之上部凹面 並在將平板狀安裝器保持於這些樑之上的 201224382 疊層的構成 樣的效果。 所以可得到與申請專利範 圍第4項之發明一 【實施方式】 (第1實施形態) 第1圖與第2圖係表干太路as 衣不本發明之第1實施形態❶本實 施形態的燒冶用框架丨係 有近似立方體形狀,安裝器保 持手段係由以下之構件所構 上 〇 汀稱成4支角部垂直支柱2,係構 成四角落的垂直邊;近似口字 子t的下端支撐框4,係支撐 該4支角部垂直支柱2(2 2c、2d)的下端部;及近 似口字形的上端支撐框 係支撐該4支角部垂直支柱2 的上端部。如第1圖所示, 这^ /〇用框架1係插入平板狀 安裝器7後使用。 在各角部垂直支柱2的内側面’相對該平板狀安裝器 7的插入方向平行地形成水平槽部2ι,而構成安裝詩持 機構。平板狀安裝器7被插人該水平槽部21位置並保持、。 該水平槽部2i形成複數個’藉由使各水平槽部21保持於 複數個平板狀安裝# 7,而可構成如第2圖所示之多段燒 冶用燒冶治具。依此方式,將平板狀安裝器插入框架,構 成多段燒冶用燒冶治具,藉此’貞以往之一面以突起部將 空間形成於各安裝器間一面逐漸堆疊多段安裝器的構成相 比’可使能量效率或量產效率高效率化。安襄器保持機構 的形態未限定為該水平槽部2卜此外,亦可採用形成於角 部垂直支杈2之内側面的複數個凹部或凸部或者架在隔 201224382 著平板狀安裝器相向的角部垂直支柱2間之樑等的形狀。 本實施形態的燒冶用框架1係在隔著平板狀安裝器7 的.相向位置成對具備垂直地配置於相鄰之角部垂直支柱間 (2a與2b之間及2c與2d之間)的中間垂直支柱5(53與 5b)。該一對中間垂直支柱5(5a與5b)係在各個内側面具 有複數個水平孔部51,而並在隔著平板狀安裝器7相向的 位置成對之水平孔部51間架樑6。該樑6的高度係配置成 從下面支撐各水平槽部21所保持之平板狀安裝器7的中央 部。因此,因為可更穩定地保持安裝器,所以可使安裝器 文薄。又,因為經由該樑對各段之安裝器的中央進行導熱, 所乂可使其與文到來自角部垂直支柱2之導熱的影響之安 裝器的邊緣部均熱化。其中’例如如帛3圖所示,亦可作 成未具.備中間垂直支柱5的燒冶用框架i。 /例如如第2圖所示,將在各角部垂直支柱2的内側面 所形成之水平槽部21所保持之平板狀安裝器4的外周側面 長度設定成(U + L2)X2時,在本實施形態,角部垂直支柱 2的寬度s與由申間垂直支柱5的寬度七所被覆之外周側 ^ ^tb^^{(s+t)x4}/{(Ll + L2)x2 }χ1〇〇 = 5-30% ^ 安裝器4之外周側面的7〇〜95%具有在燒冶爐内露出的構 造。因此,在各段之安梦哭敕加 裝器整個面可確保良好之爐内氣體 流動* '' # —田Μ天趣邵β將 間形成於各安裝器間,一 面逐漸堆疊複數段安裝器的 況,因為最下段之安裝3|的 β的下面整個面直接或經由托盤 201224382 燒冶爐的爐體接觸,而受到來自爐體之導熱的影響大 以具有例如在最下段之安裝器被實施熱處理的電子陶瓷$ 件係製品的良率比在上段被實施熱處理的電子陶瓷元件差 等在各段之均熱化係困難之問題,而在本發明,具有複數 支角部垂直支柱2及中間垂直支柱5(以下稱為垂直支 柱)、支撐該垂直支柱之下端部的下端支撐框4、以及支撐 該垂直支柱之上端部的上端支樓框3,該安装器保持機^ 採用由在該垂直支柱之内㈣面所形成之複數財平槽部U 所構成的構成,藉此,在最下段之安裝器的下部面與爐體 之間亦形成空間,而可降低來自爐體之導熱的影響。 。。此外’從在燒冶用框架本身傾斜時㈣先穩定保持安 裝器的觀點,垂直支柱2、5的下端部及上端部各自與形成 於下端支撐框4及上端支撐框3的嵌合部嵌合並固定,而 在使燒冶用框架整體相對水平的地面傾斜3()度時宜垂直 支柱相對下端支樓框的傾斜角度是2。以下。在傾斜角度是 以上的情況’使用時的振動變大’具有因在燒冶時爐内 運所伴隨之振動而發生密燒冶物受損之問題的危險性, 而若依據本發明的該構成,可有效地避免該問題。 如上述所不,右依據本發明的構成,因為來自燒冶爐 之爐體之導熱的影響降低’而且確保良好的空氣流動,所 2構成各段之安裝器的導熱變成更均勾,而可使 均熱化。 & [女裝器保持手段的材質] 本發明之燒冶用框架係—般在惰性氣體環境氣體下,S 201224382 Compared with electronic ceramic components, it is difficult to heat the homogenization in each segment, such as the difference in yield of products. However, in the case of the lowermost segment, according to the invention of the second paragraph of the patent application scope A space is also formed between the lower surface of the device and the furnace body to reduce the heat transfer from the furnace body, and the mounting mechanism maintains 70 to 100% of the outer circumferential side of each flat connector from between the vertical pillars. Exposed. It is difficult to prevent the flow of the gas in the furnace due to the discharge of the binder decomposition gas which is harmful to sintering, and the heat conduction in each stage can be achieved because the heat conduction of the mounts constituting each stage becomes more uniform. - according to the invention of claim 3 of the patent application, the installer can be held more stably, in particular, according to the configuration of the beam between the intermediate vertical pillars, because the central portion of the mounter through the beam section conducts heat, Therefore, it is possible to achieve homogenization with the edge portion of the mount which is affected by the heat conduction from the vertical pillars of the corners. * 1 ^ The frame-like flat state has a small amount of multi-section, and the efficiency or mass production section is constructed by a pair of beams arranged by the installer: the state is multi-segmented according to the patent application scope 帛 4 items of invention Because 'the temple hand & has a configuration in which a plurality of segment stacking projection members are provided in the peripheral portion, and the laminate is held in a flat shape, the heat of the mount holding means can be made When the electronic ceramic component is subjected to multi-stage sintering, the energy efficiency is improved, the contact with the gas in the furnace is excellent, and the soaking property in a plurality of stages is excellent. According to the invention of claim 5, since the = holding means consists of a plurality of piles (four) protruding and opposed to: the wire member, and the upper surface of the stacking projections are concave and held in the flat mounter The effect of the composition of the 201224382 laminate on these beams. Therefore, the invention of the fourth aspect of the patent application can be obtained. [Embodiment] (First embodiment) Figs. 1 and 2 show that the first embodiment of the invention is not the first embodiment of the present invention. The frame for smelting has an approximate cubic shape, and the holder retaining means is constructed by the following members: 〇 Ting is called 4 corner vertical struts 2, which form the vertical side of the four corners; approximately the lower end of the suffix t The support frame 4 supports the lower end portions of the four corner vertical pillars 2 (2 2c, 2d); and the upper-end support frame of the approximately square shape supports the upper end portions of the four corner vertical pillars 2. As shown in Fig. 1, the frame 1 is inserted into the flat mounter 7 and used. The horizontal groove portion 2i is formed in parallel with the insertion direction of the flat mounter 7 at the inner side surface of each of the corner vertical stays 2 to constitute a mounting poem mechanism. The flat mounter 7 is inserted into the horizontal groove portion 21 and held. The horizontal groove portion 2i is formed in a plurality of pieces. By holding each of the horizontal groove portions 21 in a plurality of flat plate mountings #7, it is possible to constitute a plurality of stages of firing jigs as shown in Fig. 2. In this way, the flat-shaped mounter is inserted into the frame to form a multi-stage firing jig, whereby the conventional one surface is formed by stacking a space between the mounters and gradually stacking the multi-stage mounts. 'Energy efficiency or mass production efficiency can be made more efficient. The shape of the ampoule holding mechanism is not limited to the horizontal groove portion 2, and a plurality of concave portions or convex portions formed on the inner side surface of the vertical portion 2 of the corner portion may be used or the frame may be opposed to each other at 201224382. The shape of the beam or the like between the vertical pillars of the corners. The frame 1 for firing according to the present embodiment is disposed vertically between the adjacent vertical corner pillars (between 2a and 2b and between 2c and 2d) in a pair of opposing positions of the flat connector 7. The middle vertical pillars 5 (53 and 5b). The pair of intermediate vertical stays 5 (5a and 5b) are provided with a plurality of horizontal hole portions 51 in the respective inner side faces, and the frame beams 6 are formed between the pair of horizontal hole portions 51 at positions facing each other across the flat-plate mount 7. The height of the beam 6 is arranged to support the central portion of the flat-plate mounter 7 held by each horizontal groove portion 21 from below. Therefore, since the mounter can be held more stably, the mounter can be made thin. Further, since the center of the mount of each stage is thermally conducted through the beam, it can be heated to the edge portion of the mounter which influences the heat conduction from the corner vertical stay 2 . Here, for example, as shown in Fig. 3, a frame i for firing which does not have the intermediate vertical pillar 5 can be formed. / For example, as shown in Fig. 2, when the length of the outer peripheral side surface of the flat-plate mounter 4 held by the horizontal groove portion 21 formed on the inner side surface of each of the corner vertical stays 2 is set to (U + L2) X2, In the present embodiment, the width s of the corner vertical pillar 2 is covered by the width VII of the vertical pillar 5 between the applications, and the circumferential side is ^^bb^^{(s+t)x4}/{(Ll + L2)x2 }χ1 〇〇 = 5-30% ^ 7〇 to 95% of the outer peripheral side of the mounter 4 has a structure exposed in the firing furnace. Therefore, in the various sections of the dream, the entire surface of the device can ensure a good gas flow in the furnace. * '' #—田Μ天趣邵β will be formed between the installers, gradually stacking multiple installers In this case, since the entire lower surface of the β of the lowermost installation 3| is directly or via the furnace body of the 201224382 baking furnace, it is greatly affected by the heat conduction from the furnace body to have the mounter implemented, for example, in the lowermost stage. The heat-treated electronic ceramics has a problem that the yield of the article is higher than that of the electronic ceramic component which is subjected to the heat treatment in the upper stage, and the homogenization system in each segment is difficult. In the present invention, the plurality of vertical pillars 2 and the intermediate portion are provided. a vertical pillar 5 (hereinafter referred to as a vertical pillar), a lower end support frame 4 supporting an lower end portion of the vertical pillar, and an upper end frame frame 3 supporting an upper end portion of the vertical pillar, the mounter is held by the vertical The configuration of the plurality of fiscal flat grooves U formed by the inner (four) faces of the pillars, thereby forming a space between the lower surface of the lowermost installer and the furnace body, thereby reducing the heat conduction from the furnace body. . . . In addition, the lower end portion and the upper end portion of the vertical stays 2, 5 are fitted to the fitting portions formed on the lower end support frame 4 and the upper end support frame 3 from the viewpoint of stably holding the mounter in the case where the frame for firing is tilted (4). It is fixed, and the inclination angle of the vertical pillar to the lower end frame frame is 2 when the whole frame of the firing frame is inclined by 3 () degrees. the following. In the case where the inclination angle is the above, the case where the vibration at the time of use becomes large has a risk of causing damage to the dense solidified material due to the vibration accompanying the internal combustion during the firing, and the composition according to the present invention Can effectively avoid this problem. As described above, according to the constitution of the present invention, since the influence of the heat conduction from the furnace body of the baking furnace is lowered 'and the good air flow is ensured, the heat conduction of the mounts constituting each stage becomes more uniform, but Homogenization. & [Material of the material for holding the device] The frame for the burning of the present invention is generally under an inert gas atmosphere,

10 201224382 在本發明, SiC、再紝曰 * j 、、,口 日曰 在約130(^ 4501的高溫條件下使用。因此 安裝器保持手段由含有〇.〇1〜3〇%之Si的si SiC及Si^—SiC的任一種材質所構成。 ι-SiC係使Si浸潰於Sic之粒子間之稱為Si浸責 w的材質。作為其化學成分’宜含"〇,%的Sic'卜3⑽ 的Si,進而作為微量成分,另外配製(將。設為 1〇〇%,另外)含有 〇·〇卜0.2%的 A1、〇·〇卜〇.2%的10 201224382 In the present invention, SiC, 纴曰* j , , , 曰 曰 are used under high temperature conditions of about 130 (^ 4501. Therefore, the mounting means is maintained by a Si containing 〇.〇1~3〇% Si SiC and Si^-SiC are made of any material. ι-SiC is a material called Si immersion w that immerses Si between particles of Sic. As a chemical component, it should contain S " The Si of '3 (10) is further prepared as a trace component, and is prepared (1% by weight, and 2%) of A1, 〇·〇卜〇.

〇.〇1~〇.2%的Ca。若Si的含有率超過3〇%,因為引起強度 降低或熱輻射率降低,所以不佳。 X 又,根據算術平均的表面粗糙度為Ra = 〇.卜3〇#m、^ 性係數為200〜雜Pa、強度為⑽〜4_pa、在室溫的導熱 係數為150〜240W/m. k、氣孔率為1%以下較佳。藉由採用 ,有這種化學成分及物性的材f,而可使燒冶隸架i輕 量化且高強度化及長壽命化。 該由Si —Sic所構成之安裝器保持手段的熱輻射率係 如第4圖之圖形中的實線所示,在波長8#111為8〇〜1〇⑽, 在波長12"„)為20〜40%,在波長19/^為6〇〜8〇%較佳。熱 輻射率係可根據化學成分與表面粗糙度規定,在本發明, 如上述所示,作為化學成分,採用含有7〇~99%的δί(>ι〜3〇% 的Si,進而作為微量成分,另外配製含有〇. 〇卜〇_以的a卜 、〇. 2/°的Fe、^. 01〜0. 2%的Ca的構成,並採用表面粗 輪度為Ra = (M〜3()/zm’ Ra=1Q〜3Q//m的構成尤佳,藉此, 貫現該熱輻射率。此外’第4圖的虛線是作為化學成分, 鉍用作為以往之安裝器的主成分一般所使用之氧化鋁的情 11 201224382 況的熱輻射率。如第4圖所示,藉由替代作為以往之安裝 器的主成分一般所使用之氧化鋁,使用Si — Sic,而提言 各構成構件(2、5、3、4)的熱輻射率,使可有效率地利用 來自在爐内之各構成構件(2、3、4)的輻射熱,而 量效率高的燒冶。 & 在構成安裝器保持手段之各構成構件(2、5、3、4)的 表層,具備作為化學成分含有9〇%以上的Ml之厚度卜1〇 # m的覆膜較佳。利用該覆膜,抑制環境氣體所造成之各 構成構件(2、5、3、4)的反應劣化,而可使燒冶用框架長 壽命化。 除了上述的Si — Sic化外,亦可使用再結晶Sic或 Sii— Si〇再結晶Sic係利用再結晶操作使Sic粒子間熔 接而緻密化,其化學成分是99〜100%的SiC。可是,是將 sic設為100%’另外作為微量成分’含有〇 〇卜〇 2%的=卜 〇. 〇1 〜0. 2%的 Fe、0.卜〇. 2%的 Ca。 ’適合在 70〜80%的 另外含有 。此外, 亦一樣地 又,ShN4—SiC是將Si3N4作為黏合劑的Sic 比Si — SiC更高溫的區域使用。其化學成分係 SiC、20^30%的 Si3N4 ’ 將 SiC+Si3N4 設為 1〇〇%, 〇.1 0.5/0的 A1、0.1〜〇·5%的 pe、〇.〇卜0.2%的 ca 延3種材質係在以下說明之第2、第3實施形態 採用。 β此外’雖然平板狀安裝器7的材質係無特別限定,但 疋為了可承受使用溫度’是與安裝器保持手段一樣的材質 較佳’尤其是含有U卜30%Si的Si-SiC較佳。這是由於〇.〇1~〇.2% Ca. If the content of Si exceeds 3 %, it is not preferable because it causes a decrease in strength or a decrease in heat radiation rate. X, according to the arithmetic mean surface roughness Ra = 〇. Bu 3〇 #m, ^ coefficient is 200 ~ miscellaneous Pa, intensity is (10) ~ 4_pa, thermal conductivity at room temperature is 150~240W / m. k The porosity is preferably 1% or less. By using the material f having such a chemical composition and physical properties, the firing post i can be made lighter, higher in strength, and longer in life. The heat emissivity of the mount holding means composed of Si-Sic is as shown by the solid line in the graph of Fig. 4, and is 8 〇 1 〇 (10) at a wavelength of 8 #111, and a wavelength of 12 quot „ 20 to 40%, preferably at a wavelength of 19/^ of 6 〇 to 8 〇%. The heat radiance can be specified according to chemical composition and surface roughness, and in the present invention, as described above, as a chemical component, the content is 7 〇~99% of δί(>ι~3〇% of Si, and further as a trace component, and further prepared with a 〇. 〇 〇 _ _ a, 〇. 2 / ° Fe, ^. 01~0. The composition of 2% Ca is preferably a composition having a surface roughness of Ra = (M~3()/zm' Ra = 1Q to 3Q//m, whereby the heat emissivity is achieved. The dotted line in Fig. 4 is a chemical composition, and the thermal emissivity of the alumina used as the main component of the conventional mounter is as shown in Fig. 4, as shown in Fig. 4, by replacing it as a conventional installation. The alumina used in the main component of the device is Si-Sic, and the heat emissivity of each component (2, 5, 3, 4) is mentioned, so that it can be efficiently utilized from the furnace. The radiant heat of the constituent members (2, 3, 4) and the high-efficiency smelting. & The surface layer of each of the constituent members (2, 5, 3, 4) constituting the mounter holding means is provided as a chemical component. It is preferable that the film of the thickness of M1 is more than 〇%, and the film of the film is used to suppress deterioration of the reaction of each constituent member (2, 5, 3, 4) caused by the environmental gas, and the sintering can be performed. In addition to the Si-Sicization mentioned above, it is also possible to use recrystallized Sic or Sii-Si〇 recrystallized Sic system to refine the Sic particles by recrystallization, and the chemical composition is 99~100. % SiC. However, the sic is set to 100% 'in addition to the trace component' contains 2% of the = 〇 〇 〜 . 2 2 2 2 2 2 2 2 2 2 'It is suitable for 70~80% of the other. In addition, ShN4-SiC is used in the region where Sic which uses Si3N4 as a binder is higher than Si-SiC. Its chemical composition is SiC, 20^30%. Si3N4 'Set SiC+Si3N4 to 1〇〇%, 〇.1 0.5/0 A1, 0.1~〇·5% pe, 〇.〇布 0.2% ca extension 3 kinds The texture system is used in the second and third embodiments described below. β is not particularly limited as long as the material of the flat-plate mounter 7 is used, but the material is the same as the holder holding means. 'In particular, Si-SiC containing U 32% Si is preferred. This is due to

S 12 201224382 該材質的高溫強度大, 而可使女裝器變薄。平柘壯 7的形狀未必要作成 女裝益 狀。若採用這些形狀 $成蜂巢狀或網 7的古.因為爐内氧體以貫穿平板狀安裝器 的方式^動’所以可更均熱化1外,在燒冶溫产 較低溫的情況,亦可採 又疋t 用鈦等之耐熱金屬製網。 (第2實施形態) 第5圖與第6圖传矣;士议。。 係表不本發明之第2實施形態。本實 施形態的燒冶用框架1係 、 ''女裝盗保持手段由在周邊部且 複數個段堆疊用突起u ,、爾 u之框狀的平板構件10所構成。在 第5圖的實施形態,長方彡 長方形的千板構件10在左右兩側具備 四角形的孔12,並將平板狀安裝器7載置於該部分。段堆 疊用突起n突設於與平板構件1G之—邊的左右兩端相對 向之邊的中央部,而比段堆㈣突起11更低較位用突起 13突設於包園孔12的位置。 第6圖係使該安裝器保持手段保持平板狀安裝器了, 並多段地疊層之狀態的側視圖,並以點線表示平板狀安裝 器7。依此方式’在本實施形態’亦平板狀安裝器7之外 周側面的70%以上係在燒冶爐内露出。又’因為其材質係 熱輻射率高的si —sic、再結晶Sic、Si3N4_SiC的任一種, 所以與第1實施形態一樣可確保優異的均熱性。又,因為 可在使安裝器保持手段保持平板狀安裝器7後進行多段堆 疊’所以與第!實施形態相比’具有在處理性優異的優點。 (第3實施形態) 第7圖與第8圖係表示本發明之第3實施形態。本實 13 201224382 施形態的燒冶用《 1係安裝器保持手段由具備複數個段 堆疊用^ 15之相對向配置的—對直線構件16、與架在 各段堆疊用突起15之上部凹面17間的# 18所構成。段堆 疊用突起15是山形的突起,凹部19形成於其下側。標18 是截面角形的棒狀體,其兩端嵌入段堆疊用突起15的上部 凹面17,並將平板狀安裝器7載置於其上。 第8圖係將平板狀安裝器7保持於這些樑18之上並 多段地疊層之狀態的側視圖,平板狀安裝器7係以點線表 示。如第8圖所示,下側的凹部19嵌入樑18的上侧而 使疊層狀態穩定。 如第8圖所示,在本實施形態’可使平板狀安裝器7 之外周側面的約1 0%在燒冶爐内露出。又,因為其材質係 熱輻射率高的Si — SiC、再結晶siC、Si3N4—SiC的任一種, 所以與第1實施形態一樣可確保優異的均熱性。第3實施 形態亦因為可在使安裝器保持手段保持平板狀安裝器7後 進行多段堆疊,所以與第1實施形態相比,具有在處理性 優異的優點。 [實施例]S 12 201224382 The material has a high temperature strength and can make the women's wearer thin. The shape of the flat and strong 7 is not necessary to be made into a woman's benefit. If these shapes are used, it is a honeycomb or a net. Because the oxygen in the furnace is moved through the flat-plate mounter, it can be heated more uniformly, and in the case of lower temperature and temperature. It is also possible to use a heat-resistant metal made of titanium or the like. (Second Embodiment) Fig. 5 and Fig. 6 are transmitted; . The second embodiment of the present invention is not shown. The frame 1 for the smelting of the present embodiment, the ''women's sling retention means' is constituted by a frame member 10 having a frame-shaped projection u in a peripheral portion and a plurality of stages. In the embodiment of Fig. 5, the rectangular rectangular plate member 10 has a quadrangular hole 12 on the left and right sides, and the flat-plate mounter 7 is placed in this portion. The segment stacking protrusions n are protruded from the center portion of the side opposite to the left and right ends of the flat plate member 1G, and the lower position projections 13 are protruded from the wrapping hole 12 at a lower position than the segment stack (four) projections 11. . Fig. 6 is a side view showing the state in which the holder holding means holds the flat-plate mounter and is laminated in a plurality of stages, and the flat-plate mounter 7 is indicated by dotted lines. In this manner, in the present embodiment, 70% or more of the outer peripheral side of the flat-plate mounter 7 is exposed in the baking furnace. In addition, since the material is any one of si-sic, recrystallized Sic, and Si3N4_SiC having a high heat emissivity, it is possible to ensure excellent soaking property as in the first embodiment. Further, since the multi-stage stacking can be performed after the holder holding means is held by the flat-plate mounter 7, the same is true! The embodiment has an advantage of being excellent in handleability. (Third embodiment) Fig. 7 and Fig. 8 show a third embodiment of the present invention. In the present invention, the "1 series mounter holding means" is provided by a pair of straight members 16 having a plurality of segment stacking members 15 and a concave surface 17 which is placed on the upper portion of each stack stacking projection 15 The composition of #18. The stack stacking projection 15 is a mountain-shaped projection, and the recess 19 is formed on the lower side thereof. Reference numeral 18 is a rod-shaped body having a cross-sectional angle, and both ends thereof are fitted into the upper concave surface 17 of the segment stacking projection 15, and the flat mounter 7 is placed thereon. Fig. 8 is a side view showing a state in which the flat mounter 7 is held on the beams 18 and laminated in a plurality of stages, and the flat mounter 7 is indicated by dotted lines. As shown in Fig. 8, the lower concave portion 19 is fitted into the upper side of the beam 18 to stabilize the laminated state. As shown in Fig. 8, in the present embodiment, about 10% of the outer peripheral side surface of the flat-plate mounter 7 can be exposed in the baking furnace. In addition, since the material is any one of Si—SiC, recrystallized siC, and Si 3 N 4 —SiC having a high heat emissivity, excellent soaking property can be secured as in the first embodiment. In the third embodiment, the holder holding means can be stacked in a plurality of stages after the flat holder 7 is held. Therefore, the third embodiment has an advantage of being excellent in handleability as compared with the first embodiment. [Examples]

S 14 201224382 [第1表] 安裝器形狀 第1實施例 150xl50x2tS 14 201224382 [Table 1] Mounter shape First embodiment 150xl50x2t

—" L---^--—____一7 第1比較例 T50xl50x5t7i5h~ 在本發明的燒冶用框架,使用插入⑽—龍 的平板狀安裝ϋ,而構& 15段之段堆#構造的燒冶治具 (第1實施例),及以150—的安裝器堆疊15段 ,上面周邊具有15顧之突起部而構成者(第“匕較例),在 H的燒&條件下’進行陶究電容器的燒冶(聰。c、Μ 、,。在第1表分別表示調杳在各. (「製。、 旧—在各奴之製品良率的結果 I良率“)」)、測量構成各段 部的溫ϋ的結果(「安裝器溫差 之端㈣中央 t Λβ ΛΑ )」)、最上段之安裝器 中央。P的溫度與構成各段 中央溫差rc)」)。 盗中央部的溫差(「安裝器 如第1表所示,藉由使 在各段均熱化,而提高製品良率。W燒“框架,可使 15 201224382 [第2表] 第2 實施例 第3 實施例 第4 實施例 第5 實施例 第6 實施例 第2 始加 第3 比敕例 第4 比較例 基材 主成分比 (wt%) SiC 70 80 θθ 100 75 65 Si 30 20 1 - 35 - AI2O3 — - - - — 100 85 Si〇2 — - - - 1 15 S13N4 — - - - 24 _ _ 微董成分 (wt%) A1 0.01 0.1 0.2 0.1 0.2 0.01 0.5 0.1 Fe 0.01 0.01 0.2 0.1 0.2 0.01 0.3 0.1 卜Ca 0.01 Γ~D. 1 0.2 0.1 0.1 〇 01 0.3 0.1 彈性係J fe(GPa) 210 350 400 200 250 190 300 100 弩曲涟度QMPa) rioo 200 400 Γ 80 一 200 95 100 50 導熱係數(W/m · 1〇 150 190 240 60 一 40 140 30 5 軋札2 0.7 0.5 0.1 20 10 2 1 20 輻射率 (%) 6^m 81 90 99 96 89 70 50 30 12/zm 16仁m 22 60 30 70 39 δ〇 35 70 28 10 5 5 中段的製品良率 多段棚架匆 (¾ L的壽命(二J ) υ 100 400 100 500 100 450 /〇 100 300 68 100 350 50 97 60 40 96 30 40 96 35 為了調查材質的影響,根據第2表所示的各成分比, 構成本發明之申請專利範圍第】項的燒冶用框架(第2〜第6 實施例、第2~第4比較例),並插入15〇mmxl5〇mmx2mm的 平板狀安裝器’而構成15段之段堆叠構造的燒冶治具。使 用該燒冶用框架,在相同的燒冶條件下,進行陶瓷電容器 的燒冶( 1300°C、10小時)。在第2表分別表示測量第2〜 第6實施例、第2〜第4比較例之燒冶用框架之物性(彈性 係數、4曲強度、導熱係數、氣孔率、輻射率)的結果、中 斷之製品良率的調查結果、燒冶用框架本身的壽命(「多段 棚架組的壽命」(次))。 第2表所示之第2、3、4實施例係含有〇〇13〇%之。 的Si —SiC,第5實施例係再結晶SiC,第6實施例係^冰 ~~ SxC,第2比較例係Si含有率過剩的Si_ si(:,第3比 車乂例係氧化銘,第4比較例係石夕氧化紹。如第2表所示,-" L---^---_____7 1st comparative example T50xl50x5t7i5h~ In the frame for melting of the present invention, a flat-shaped mounting cymbal inserted with (10)-dragon is used, and a pile of 15 segments is constructed. The structure of the burning jig (the first embodiment), and the 150-mounter stacking 15 segments, the upper periphery has 15 protrusions and the like (the "匕" example), the burning in H & Under the conditions, 'the burning of the ceramic capacitors (Cong.c, Μ,,. In the first table, respectively, the 杳 杳 杳 . ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ))), the result of measuring the temperature of each segment ("the end of the temperature difference of the installer (4) center t Λβ ΛΑ)"), the center of the uppermost installer. The temperature of P and the central temperature difference rc)"). The temperature difference between the center of the thief ("the installer is as shown in the first table, and the product yield is improved by heating in each stage. W" frame can be made 15 201224382 [Table 2] The second embodiment Third Embodiment Fourth Embodiment Fifth Embodiment Sixth Embodiment Second Addition Third Comparative Example Fourth Comparative Example Substrate Principal Component Ratio (wt%) SiC 70 80 θθ 100 75 65 Si 30 20 1 - 35 - AI2O3 — - - - — 100 85 Si〇2 — - - - 1 15 S13N4 — - - - 24 _ _ Micro-component (wt%) A1 0.01 0.1 0.2 0.1 0.2 0.01 0.5 0.1 Fe 0.01 0.01 0.2 0.1 0.2 0.01 0.3 0.1 卜 Ca 0.01 Γ~D. 1 0.2 0.1 0.1 〇01 0.3 0.1 Elastic system J fe(GPa) 210 350 400 200 250 190 300 100 涟 涟 MPa MPa MPa rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio rio (W/m · 1〇150 190 240 60 - 40 140 30 5 Rolling 2 0.7 0.5 0.1 20 10 2 1 20 Emissivity (%) 6^m 81 90 99 96 89 70 50 30 12/zm 16 Ren m 22 60 30 70 39 δ〇35 70 28 10 5 5 Product yield in the middle section Multi-segment scaffolding rush (3⁄4 L life (2 J) υ 100 400 100 500 100 450 /〇100 300 68 100 350 50 97 60 40 96 30 40 96 35 In order to investigate the influence of the material, the frame for the smelting of the scope of the patent application of the present invention (the second to sixth embodiments, the second to fourth comparative examples) according to the respective component ratios shown in the second table ), and insert a 15〇mmxl5〇mmx2mm flat-plate mounter' to form a 15th-stage stacking structure of the burning fixture. Using the firing frame, the ceramic capacitor is fired under the same sintering conditions. (1300 ° C, 10 hours). The physical properties (elastic coefficient, four-curvature strength, thermal conductivity, and pore diameter) of the frame for the second to sixth embodiments and the second to fourth comparative examples were measured in the second table. The result of the rate, the radiance rate, the result of the investigation of the product yield of the interruption, and the life of the frame for the smelting ("life of the multi-stage scaffolding group" (times)). The second, third, and fourth embodiments shown in Table 2 contain 〇〇13%. Si—SiC, the fifth embodiment is recrystallized SiC, the sixth embodiment is 冰 ~ ~~ SxC, and the second comparative example is Si sis with excess Si content (:, the third ruthenium is oxidized, The fourth comparative example is Shixi Oxidation. As shown in Table 2,

S 16 201224382 藉由、3有〇. 01〜30%之Si的Si — Sic'再結晶siC及 —SlC的任—種材f構成中請專利範圍第1項之燒冶用檀 架’而可使製品良率提高及使燒冶用框架長壽命化。另— 2面’ ^具有第2〜第4比較例之化學成分的材質構成中 月專利乾圍第1項之燒冶用框架的情況’觀察到製品良率 惡化,而且尤其棚架組壽合顯著地降低。 【圖式簡單說明】 第1圖係表示第i實施形態之燒冶用框架的整 圖 體立體 之狀態 第2圖係表示將平板狀安裝器插入燒冶用框 的立體圖。 =3圖係表示第】實施形態之變形例的整體立體圖。 第4圖係構成本發明之安裝器保持手段之 熱輻射率的圖形。 iSiC之 第5圖係表示第2實施形態之燒冶用框 圖 用框&的整體立體 第6圖係表示將平板狀安裝器插入燒冶用 的側視圖。 第7圖係表示第3實施形態之燒冶用框架 架之狀態 圖 的整體立體 樞架之狀態 第8圖係表示將平板狀安裝器插Λ燒冶用 的側視圖。 明 第9'係堆疊複數段之以往的安裝器之狀態的說 201224382 圖。 【主要元件符號說明】 1 ~燒冶用框架; 2(2a、2b、2c、2d)〜角部垂直支柱; 21〜水平槽部; 3〜上端支撐框; 4 ~下端支撐框; 5(5a、5b)〜中間垂直支柱; 5卜水平孔部; 6~樑; 7〜平板狀安裝器; 8~突起部; 10〜平板構件; 11〜段堆疊用突起; 1 2〜四角形的孔; 13〜定位用突起; 15〜段堆疊用突起; 1 6〜直線構件, 1 7〜上部凹面; 1 9 ~凹部。 18〜樑; 18 sS 16 201224382 By, 3 has 〇. 01~30% of Si of Si-Sic' recrystallized siC and -SlC of any material f constitutes the slab of the smelting of the first part of the patent scope The product yield is improved and the frame for firing is extended. In addition, the material of the chemical composition of the second to fourth comparative examples constitutes the case of the frame for the burning of the first patent of the Chinese patent, and the deterioration of the product yield is observed, and in particular, the scaffolding group is combined. Significantly lower. [Brief Description of the Drawings] Fig. 1 is a perspective view showing the state of the entire body of the frame for melting of the i-th embodiment. Fig. 2 is a perspective view showing the insertion of the flat plate insert into the frame for melting. Fig. 3 is an overall perspective view showing a modification of the first embodiment. Fig. 4 is a graph showing the heat emissivity of the holder holding means of the present invention. Fig. 5 is a side view of the frame for firing in the second embodiment. Fig. 6 is a side view showing the insertion of the flat plate insert into the baking. Fig. 7 is a view showing the state of the overall three-dimensional pivot frame of the state of the frame for the smelting of the third embodiment. Fig. 8 is a side view showing the state in which the flat-plate mounter is inserted into the slab. Ming 9' is the state of the previous installer of the stacked multiple segments 201224382. [Description of main component symbols] 1 ~ frame for burning; 2 (2a, 2b, 2c, 2d) ~ vertical pillar of corner; 21~ horizontal groove; 3~ upper support frame; 4 ~ lower support frame; 5 (5a , 5b) ~ intermediate vertical pillar; 5 horizontal hole; 6 ~ beam; 7 ~ flat mount; 8 ~ protrusion; 10 ~ flat member; 11 ~ segment stacking protrusion; 1 2 ~ square hole; ~ positioning protrusion; 15 ~ segment stacking protrusion; 1 6 ~ linear member, 1 7 ~ upper concave surface; 1 9 ~ concave. 18~梁; 18 s

Claims (1)

201224382 七、申請專利範圍: 1. 一種燒冶用框架,利用安裝器保持手段在垂直方向 多段地保持複數片平板狀安裝器, 其特徵在於: 該安裝器保持手段係由含有〇 〇1〜3〇%之以的以― 1C再、.Ό日曰SiC及Si3N4— Sic的任一種材質所構成,該安 裝器保持手段係在使各平板狀安裝器露出其外周侧面之 70〜100%之狀態下保持。 2. 如申請專利範圍第1項之燒冶用框架,其中安裝器 保持手段具有:複數支垂直支柱,係具備安裝器保持機構 下端支撐框’係支樓該垂直支柱的下端部;及上端支撐框, 係支撐該垂直支柱的上端部; 該安裝器保持機構由在垂直支柱之内側面所形成的複 數個凹4或凸。p、或者架在隔著平板狀安裝器相向之垂直 支柱間之樑的至少任一個所構成。 3. 如申請專利範圍第2項之燒冶用框架,其中垂直支 柱由構成其四角落之垂直邊的角部垂直支柱、及垂直配置 於該角部垂直支柱間的中間垂直支柱所構成。 4. 如申請專利範圍第1項之燒冶用框架,其中安裝器 保持手段由在周邊部具備複數個段堆疊用突起之框狀的平 板構件所構成’在使其保持平板狀安裝器之狀態多段地疊 層。 5·如申請專利範圍第1項之燒冶用框架,其中安裝器 保持手段由具備複數個段堆疊用突起並相對向配置的2對 19 201224382 直線構件、及架在各段堆疊 璺用大起之上部凹面間的樑所構 成’在將平板狀安裝器保捭 _ 層。 益保待於延些樑之上的狀態多段地疊 6. 如申請專利範圍第1· 主4項中任一項之燒冶用框 架,其中構成安裝器保持手俨 符子奴的構件由Si — SiC所構成, 其化學成分係SiC: 70~99%、ς·., ⑽心 Sl .卜3〇%,將 SiC + si 100%,進而含有 A1 : 0 01 ”·' u. 2/0、Fe : ο. 〇卜〇, 2%、Ca . 〇.〇卜0.2%。 La · 7. 如申請專利範圍第6頊 之燒冶用框架,其中構成安 裝器保持手段之構件的熱輕射率是在波 8. 如申明專利範圍第6或 1、 x ’項之燒冶用框架,其中槿 成t裝器保持手段的構件之麻姑曾 Ra_〇"n 構件之根據算術平均的表面粗縫度為 Ka-u.l〜30 " m、彈性孫金今达 评性係數為2〇〇M〇〇GPa、 1〇〇〜40〇MPa、在室溫的導熱係 又為 率為1%以下。 數為150〜謂… '氣孔 9_如申請專利範圍第丨至 加从 4項中任一項之燒冶用框 条,其中構成安裝器保持手段 ^ ^ 刃構件由再結晶SiC所構 成,其化學成分係SiC : 99〜100%,# ς 人士 將S!C設為1〇〇%,進而 含有 A1 : 0_0卜0.2%、Fe: 〇 〇 琨而 u. 2/〇、Ca : 0. 〇卜〇. 2%。 10.如申請專利範圍第1至 组^ ^ ^ 4項中任一項之燒冶用框 条,其中構成t裝器保持手段@ 士 .姐、. 的構件由Si3N4-SiC所構 成,其化子成分係SiC: 7〇~8〇%、ς. λτ , η . S13N4 : 20〜30%,將 Sir + Si3N〇設為100%’進而含有Ai.n • υ· 1 〜〇. 5%、Fe: 〇· 1 〜〇. 5%、 S 20 201224382 Ca : 0. 01〜0. 2%。 11 _如申請專利範圍第1至4項中任一項之燒冶用框 架,其中平板狀安裝器的材質是含有0. 01 ~30%之Si的Si -SiC。 21201224382 VII. Patent application scope: 1. A frame for burning, which uses a holder holding means to hold a plurality of flat plate-shaped mounters in a plurality of stages in a vertical direction, wherein: the installer retaining means is composed of 〇〇1~3 〇% is composed of any one of ―1C, Ό日曰 SiC and Si3N4—Sic, and the mounter retaining means is such that each flat mounter exposes 70 to 100% of its outer peripheral side. Keep it under. 2. The frame for the melting of the first application of the patent scope, wherein the installer retaining means has: a plurality of vertical pillars, a lower end portion of the vertical support strut of the lower end support frame of the installer holding mechanism; and an upper end support a frame supporting the upper end of the vertical struts; the mount retaining mechanism being formed by a plurality of recesses 4 or protrusions formed on the inner side of the vertical struts. p, or at least one of the beams placed between the vertical struts facing each other across the flat-shaped mount. 3. The frame for burning according to item 2 of the patent application, wherein the vertical support is composed of a vertical vertical pillar constituting a vertical side of the four corners thereof and an intermediate vertical pillar vertically disposed between the vertical pillars of the corner. 4. The frame for the smelting of the first aspect of the patent application, wherein the mounter retaining means is constituted by a frame member having a frame-like projection having a plurality of segments for stacking at the peripheral portion, in a state in which the flat mounter is held Stacked in multiple stages. 5. The frame for the smelting of the first application of the patent scope, wherein the installer retaining means is provided by a pair of 19 201224382 linear members having a plurality of stacking projections and arranged opposite each other, and the racks are stacked in each section. The beam between the upper concave surfaces is formed as a 'layer of the flat mounter'. The protection is to be stacked on a plurality of sections. 6. For example, in the scope of the patent application, the main frame of the first four items, the components of the assembly that hold the handcuffs are made of Si. — SiC consists of SiC: 70~99%, ς·., (10) heart Sl. 3〇%, SiC + si 100%, and further contains A1 : 0 01 ”·' u. 2/0 , Fe : ο. 〇 〇, 2%, Ca. 〇. 0.2 0.2 0.2%. La · 7. The frame of the smelting of the sixth paragraph of the patent application, in which the components of the holder retaining means are thermally light The rate is in the wave 8. As stated in the scope of the patent scope 6 or 1, the '''''''''''''''''''''''' The surface roughness is Ka-ul~30 " m, the elastic Sun Jinjinda evaluation coefficient is 2〇〇M〇〇GPa, 1〇〇~40〇MPa, and the thermal conductivity at room temperature is 1% or less. The number is 150~... 'Pneumatic hole 9_ as in the patent application range 丨 to plus from any of the four items of the burning frame, which constitutes the mounting device ^ ^ blade member Recrystallized SiC, the chemical composition of which is SiC: 99 to 100%, # ς People set S!C to 1%, and further contain A1: 0_0, 0.2%, Fe: 〇〇琨 and u. 2/ 〇, Ca: 0. 〇卜〇. 2%. 10. For the frame of the smelting of any of the patent scopes 1 to ^ ^ ^ 4, which constitutes the t-device retention means @士.姐姐The components are made of Si3N4-SiC, and the chemical components are SiC: 7〇~8〇%, ς.λτ, η. S13N4: 20~30%, and Sir + Si3N〇 is set to 100%' Ai.n • υ· 1 〇. 5%, Fe: 〇· 1 〇. 5%, S 20 201224382 Ca : 0. 01~0. 2%. 11 _If the patent application range is 1 to 4 Any of the materials for the smelting, wherein the material of the flat-plate mount is Si-SiC containing 0.1 to 30% of Si.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI612024B (en) * 2016-06-29 2018-01-21 丸十股份有限公司 Burning jig for ceramic compact
TWI622071B (en) * 2013-08-30 2018-04-21 Ngk Insulators Ltd Bracket

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105745185B (en) 2013-10-07 2018-11-20 圣戈本陶瓷及塑料股份有限公司 Refractory product
CN103743204B (en) * 2014-01-08 2015-09-09 长兴明晟冶金炉料有限公司 Spherical furnace material baking oven
CN107024113A (en) * 2016-01-31 2017-08-08 湖南大学 A kind of vertical sintering equipment of emery wheel
JP6811196B2 (en) * 2018-01-10 2021-01-13 日本碍子株式会社 Baking setter
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KR102610471B1 (en) 2018-08-22 2023-12-05 주식회사 엘지화학 Firing apparatus for solid oxide fuel cell and method for manufacturing the same
TWI684739B (en) * 2019-04-19 2020-02-11 群翊工業股份有限公司 Substrate baking apparatus and baking method
CN114207372A (en) * 2019-08-16 2022-03-18 日本碍子株式会社 Frame for firing and jig for firing
CN112496319A (en) * 2019-09-16 2021-03-16 宿迁启祥电子科技有限公司 Sintering device and preparation method of tungsten alloy material
US20220299268A1 (en) * 2021-03-16 2022-09-22 Ssi Sintered Specialties, Llc Racking system for use in continuous sintering furnaces
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JP7560691B1 (en) 2024-03-28 2024-10-02 ノリタケ株式会社 Firing fixture
JP7560690B1 (en) 2024-03-28 2024-10-02 ノリタケ株式会社 Firing fixtures and frames
JP7515761B1 (en) 2024-03-28 2024-07-12 株式会社ノリタケカンパニーリミテド Firing fixture
JP7515762B1 (en) 2024-03-28 2024-07-12 株式会社ノリタケカンパニーリミテド Firing fixture

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4392693T1 (en) * 1992-06-08 1994-09-08 Ngk Insulators Ltd Inserts resistant to temperature changes, creep and oxidation resistant
JP2535480B2 (en) * 1992-06-25 1996-09-18 日本碍子株式会社 Creep resistance Si-SiC quality sintered body
JPH07280207A (en) * 1994-04-14 1995-10-27 Ngk Insulators Ltd Radiant tube
JP3904665B2 (en) * 1997-05-13 2007-04-11 日本碍子株式会社 Shelf structure for kiln
JP2000074571A (en) 1998-09-03 2000-03-14 Toshiba Ceramics Co Ltd Calcination jig
JP2000111269A (en) * 1998-09-30 2000-04-18 Toshiba Ceramics Co Ltd Tool for burning
JP3943282B2 (en) * 1999-05-07 2007-07-11 日本碍子株式会社 Ceramic tube and induction heating furnace using the same
JP2001328870A (en) * 2000-05-19 2001-11-27 Taiyo Yuden Co Ltd Method for burning ceramic, tunnel type burning furnace, method and apparatus for procuding ceramic electronic part and housing unit for burning ceramic electronic part
JP4049545B2 (en) * 2001-03-22 2008-02-20 日本碍子株式会社 SiC heat treatment jig
JP2003014378A (en) * 2001-06-27 2003-01-15 Maruju:Kk Sintering jig
JP2005082450A (en) * 2003-09-09 2005-03-31 Ngk Insulators Ltd SILICON NITRIDE-COMBINED SiC REFRACTORY AND ITS PRODUCING METHOD
JP4060822B2 (en) * 2004-04-16 2008-03-12 日本碍子株式会社 Ceramic composite material
JP4869048B2 (en) 2006-02-15 2012-02-01 日本碍子株式会社 Flat tile firing kiln tool
JP4818300B2 (en) 2008-03-25 2011-11-16 日本碍子株式会社 Electronic component firing setter and method for manufacturing the same
JP4787308B2 (en) * 2008-12-01 2011-10-05 日本碍子株式会社 Shelves for firing
CN201476585U (en) * 2009-08-06 2010-05-19 江西雅华工业陶瓷有限公司 Integral frame type ceramic product calcining-endure plate

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI622071B (en) * 2013-08-30 2018-04-21 Ngk Insulators Ltd Bracket
TWI612024B (en) * 2016-06-29 2018-01-21 丸十股份有限公司 Burning jig for ceramic compact

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CN103097845A (en) 2013-05-08
TWI528013B (en) 2016-04-01
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WO2012014835A1 (en) 2012-02-02
JPWO2012014835A1 (en) 2013-09-12

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