TW201222568A - Adhesion film for connecting circuit and usage thereof, circuit connection structure and manufacturing method thereof, and connecting method of circuit member - Google Patents

Adhesion film for connecting circuit and usage thereof, circuit connection structure and manufacturing method thereof, and connecting method of circuit member Download PDF

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TW201222568A
TW201222568A TW100120185A TW100120185A TW201222568A TW 201222568 A TW201222568 A TW 201222568A TW 100120185 A TW100120185 A TW 100120185A TW 100120185 A TW100120185 A TW 100120185A TW 201222568 A TW201222568 A TW 201222568A
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circuit
film
adhesive
connection
thickness
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TW100120185A
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Chinese (zh)
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TWI455152B (en
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Satoru Mori
Kazuya Sato
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Hitachi Chemical Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15788—Glasses, e.g. amorphous oxides, nitrides or fluorides

Abstract

The present invention provides an adhesion film for connecting circuits. The adhesion film for connecting circuits includes: a conductive adhesive layer including an adhesive composition and conductive particles; and an insulative adhesive layer including an adhesive composition without conductive particles. The thickness Ti of the insulative adhesive layer and the thickness Tc of the conductive adhesive layer satisfy a relationship as shown in equation (1). Ti/Tc ≥ 1.5... (1)

Description

201222568 38757pif 六、發明說明： 【發明所屬之技術領域】 本發明是有關於一種電路連接用接著膜及其使用、電 路連接構造體及其製造方法以及電路構件的連接方法。 【先前技術】 先前，為了將半導體元件連接於基板，特別是液晶等 的平板顯示器（Flat Panel Display，FPD)用的玻璃（glass) 基板，使用因加熱而固化的熱固性的接著劑膜。 作為熱固性的接者劑膜，含有熱固性樹脂即環氧 (epoxy)樹脂的接著劑膜被廣泛使用，由於環氧樹脂因加 熱而固化之後，成為機械性強度高的聚合物，因此，藉由 上述接著劑膜來牢固地將半導體元件與液晶顯示器 (display)予以連接，可獲得可靠性高的電氣裝置。近年 來，含有能夠以比環氧樹脂更低的溫度來固化的丙烯酸酯 的接著劑膜亦逐步被使用。 然而，於使用接著劑膜來將玻璃基板與半導體元件予 以連接的情形下，當對接著劑膜進行加熱時，由於半導體 元件有時因熱傳導而被加熱之後發生熱膨脹，因此該半導 體兀件會伸展。因此，於加熱結束之後，若整體冷卻，則 伸展的半㈣it件纽縮，有畴隨該收縮，構成FPD的 玻璃基板會發生翹曲等的變形。若玻璃基板發生變形’則 會導致位於已變形的部分賴示器的顯示影像雜亂。 至今為止，為了抑制翹曲等的變形，各種方法已為人 所知。例如’已提出有使膜介於加熱及加壓工具（t〇〇i) 201222568 J»〇/pif ί i=件之間的連接方法（日本專利特開2006·229124 及祕步驟之後進行加熱的方法（日本 寻利特開2004-200230號公報）。 法亦:將ΓΪ和應力的材料使用於接著劑膜的方 專 ' 日本 板的錢"的材料來抑制玻璃基 =’但存錢接可紐下降_題。又 接著__成膜性下降，難以穩定地 ^妾者劑膜。再者，尤其存在如下的傾向，即，隨著玻 體元件的厚度變薄’容易顯著地產生勉曲(玻 【發明内容】 膜及提供如下的電路連接用接著 體及用接著膜的電路連接構造 =者膜即便當用於將厚度比先前的電路基板的厚产更^ 半導體元件予以連接時’亦可維持優“連 制娜板的變形，而且成膜性亦優異。 果發π 解決上述問題而進行了仔細研究，处 =力:?裝:後(固化之後)的電路連接用“ 接電路構件發生變形；而且因在安農之 率過低的部分’故岭 条。亦已知.尤其於彈性率局部地過低的情形 201222568 3»/5/pif 時，相對向的電極彼此難以使導電粒子 連接可靠性有下降的傾向。 ’、、”，因此， 基於上述發現而進一步進行研究，本發明 厚度薄的電路構件彼此予以連接的情形時，藉用 具有規定的層構成的電路連接用接著膜，可曰^用 罪性，亦可抑制基材的變形，從而完成了本發明了可 亦即，本發明提供-種電路連接用接著膜， =接㈣包括：含有接著成物及導餘子^ 接者劑層、與含有接著劑組成物且不含有導 性接著劑層，絕緣性接著綱的厚度 性著㈣ 的厚度TC滿足下述式⑴的關係，上述== ^用以於使第i電路電極及第2電路電極相對向的狀離 ’將第1電路構件與第2電路構件料電性連 ^ 電路構件在厚度為〇·3 _以下的第=路： 厚产成有上述第1電路電極，上述第2電路構件在 第二:以下的第2電路基板的主面上形成有上述[Technical Field] The present invention relates to an adhesive film for circuit connection, a use thereof, a circuit connection structure, a method of manufacturing the same, and a method of connecting circuit members. [Prior Art] Conventionally, in order to connect a semiconductor element to a substrate, in particular, a glass substrate for a flat panel display (FPD) such as a liquid crystal, a thermosetting adhesive film which is cured by heating is used. As a thermosetting carrier film, an adhesive film containing an epoxy resin which is a thermosetting resin is widely used, and since the epoxy resin is cured by heating, it becomes a polymer having high mechanical strength, and therefore, The film is then firmly bonded to the liquid crystal display to obtain a highly reliable electrical device. In recent years, an adhesive film containing an acrylate which can be cured at a lower temperature than the epoxy resin has been gradually used. However, in the case where an adhesive film is used to connect the glass substrate and the semiconductor element, when the adhesive film is heated, since the semiconductor element is sometimes heated by heat conduction and then thermally expanded, the semiconductor element is stretched. . Therefore, after the completion of the heating, if the whole is cooled, the stretched half (four) of the member is contracted, and the domain shrinks, and the glass substrate constituting the FPD is warped or the like. If the glass substrate is deformed, the display image on the deformed portion of the display may be disordered. Heretofore, various methods have been known for suppressing deformation such as warpage. For example, 'the method of connecting the film between the heating and pressing tool (t〇〇i) 201222568 J»〇/pif ί i=piece has been proposed (Japanese Patent Laid-Open No. 2006.229124 and the secret step are heated). Method (Japanese Unexamined Patent Publication No. 2004-200230). Method: The material of the yttrium and stress is used in the material of the adhesive film of the 'Japanese plate' to suppress the glass base = 'but the money is connected In addition, the film formation property is lowered, and it is difficult to stably form the film. Further, there is a tendency that the thickness of the glass element becomes thinner and it is easy to produce 勉 significantly. [Beauty] The film and the circuit connection structure for providing the following circuit connection and the film connection structure using the adhesive film = when the film is used to connect the semiconductor device with a thicker thickness than the previous circuit substrate. It can also maintain the excellent "deformation of the Na Na Na, and the film formation is also excellent. Fruit π has been carefully studied to solve the above problems, where = force: ?: after (after curing) the circuit connection with "connected circuit The component is deformed; and because it is in Annon The portion where the rate is too low is also known. Especially in the case where the modulus of elasticity is locally too low, in the case of 201222568 3»/5/pif, it is difficult for the opposing electrodes to have a tendency to lower the reliability of the connection of the conductive particles. In the case where the thin circuit members of the present invention are connected to each other based on the above findings, the use of the adhesive film for circuit connection having a predetermined layer structure can be used for sin. Further, the present invention can be suppressed by the deformation of the substrate, and the present invention provides a film for connecting a film, and the connection (4) includes: a layer containing the next and the carrier layer, and The subsequent composition does not include a conductive adhesive layer, and the thickness TC of the thickness of the insulating layer (4) satisfies the relationship of the following formula (1), and the above == ^ is used to make the ith circuit electrode and the second circuit electrode The first circuit member and the second circuit member are electrically connected to each other. The circuit member has a thickness of 〇·3 _ or less. The first circuit electrode is thickly produced, and the second circuit is formed. Components in the second: the following 2 the main surface of the circuit board is formed with the above

Ti/Tc^l.5... (1) 若為如上所述的電路連接用接著膜，則導電性接著劑 =的厚度躲絕雜接著_的厚度之比具有規定的值， 即便使膜固化之後，亦可將固化物内的内部應力控 制為低内部應力，且可使整個固化物具有均一且充分的彈 6 201222568 38757p!f 厚度為1 述電路連接用接著膜來將包括 以下的電路基板的電路構件彼此予以連接 靠性/。㈠抑制電路構件的變形’並且可獲得良好的連接可 再者，由於電路連接用接著膜包括導 靠:而可使連接可靠性提高。藉此，可獲得 含著劑層中所含的接著劑組成物較佳為包 *於成材枓、㈤魏翻旨及（e)潛伏性固化劑。 具有如上所述的奴的層構成，並且導電性 ==丨層㈣接著敝成物包含（a)成膜材料、（b ，因此’可獲得成膜性、对熱性 及接者11更優異的電路連接用接著膜。Ti/Tc^l.5 (1) In the case of the adhesive film for circuit connection as described above, the thickness of the conductive adhesive = the thickness of the adhesive layer has a predetermined value, even if the film is made. After curing, the internal stress in the cured product can also be controlled to a low internal stress, and the entire cured product can have a uniform and sufficient elastic 6 201222568 38757p!f thickness is 1 circuit connection with a film to include the following circuit The circuit members of the substrate are connected to each other. (1) Suppressing deformation of the circuit member' and obtaining a good connection. Further, since the bonding film for circuit connection includes the guide: the connection reliability can be improved. Thereby, it is preferable that the composition of the adhesive contained in the adhesive layer is preferably packaged in the form of a material, a material, a (b) a curing agent, and (e) a latent curing agent. Having the layer structure of the slave as described above, and the conductivity == 丨 layer (4), then the bismuth-containing material contains (a) a film-forming material, (b, therefore, "film-forming property is obtained, and heat and the connector 11 are more excellent. The circuit is connected with an adhesive film.

對於本發明的電路連接用接著膜而言 層及/或絕緣性接著劑層亦可更含 ^hJ 此，可維持更優異的連接"7靠\3有⑷絕緣性粒子。藉 造體包括本=種電路連接構造體，該電路連接構 電路基板的主面上形成有第f==·3 mm以下的第1 W 騎第1電路電極；第2電路構件， ^度為0.3 mm以下的第2電路基板的主面 電路電極，且第2電路電触 2 二 1電路電極電性連接;=部介 於弟1電路構件與第2電路構件之間，連接部為本發明的 201222568 38757pif 電路連接用接著膜的固化物。 若為如上所述的電路連接構造體 2明的電路連接用接著膜的固化物，因此，、=電^ 力控制為低内部應力，從而可抑制產 二可抑制電路構件的變形，並 該二接 im接著膜介於，路構件之間 i，上件包括第1電路構件與第2電路構 面上形成有第1電路電極，上述第二:： =電極^及㈣層體進行加熱及加壓^m2 ，藉此來形成連接部，上述連接== 電路電二ίΓΓ對向地配置的第1電路電極與第2 電連接的方式，將一對電路構件彼此予以接著。 接構2 方法’則可製造出如下的電路連 且可二體可抑制電路構件的變形，並 電發明提供一種電路構件的連接方法，在使第1 電路構ϋ 2電路電極相對向地配置的狀態下，對第1 2電路構件之二電路構件、以及配置於第1電路構件及第 構件之間的本發_電路連接用接著膜進行加熱及 8 201222568 38757pif 力中:述Si電路電極與第2電路電極予以電性連接，1 板的主面上形成有上述電路基 下的第2電路—有上 若為如上所述的電路構件的連 :明的電路連接用接著媒的固化物來連接二由:π 對向的電“:===可 的變形，並且具有良好二體可抑制電路構件 用二二:本發明提供—種接著朗用於電路連接的使 ::接者晚括：含有接著劑組·及導餘 性接者劑層、與含有接著劑組成物且不含有導電 劑層，絕緣性接著劑層的厚度Ti與導著： ^厚度Te滿足下述式⑴的_，上述接著 = 的使用是於使第1電路電極及第2電路電極相對 =的2下’將第i電路構件與第2電路構件予以電U 接，其中上述第i電路構件在厚度為〇3 _以下的 電路基板的主面上形成有上述第1電路電極，上述第2雷 ，構件在厚度為〇·3腿以下的第2電路基板的主 成有上述第2電路電極。 /In the adhesive film for circuit connection of the present invention, the layer and/or the insulating adhesive layer may further contain ^hJ, and it is possible to maintain a more excellent connection (7) with (4) insulating particles. The borrowing body includes the circuit connecting structure of the present invention, and the first W riding first circuit electrode having the f==·3 mm or less is formed on the main surface of the circuit connecting circuit board; the second circuit member, ^ degrees is a main surface circuit electrode of the second circuit substrate of 0.3 mm or less, and the second circuit is electrically connected to the circuit electrode of the second circuit; the portion is between the circuit member of the second circuit and the second circuit member, and the connection portion is the present invention. The 201222568 38757pif circuit is connected with a cured product of the adhesive film. According to the circuit-connecting structure 2 described above, the cured product of the bonding film for the circuit connection structure is controlled to have a low internal stress, so that the deformation of the circuit member can be suppressed, and the second can be suppressed. The film is interposed between the path members i, the upper member includes a first circuit electrode formed on the first circuit member and the second circuit surface, and the second::=electrode^ and (four) layer body are heated and added. The connection portion is formed by pressing the voltage m2, and the pair of circuit members are connected to each other in such a manner that the first circuit electrode and the second electrode are electrically connected to each other. The connection 2 method' can produce the following circuit connection and can suppress the deformation of the circuit member, and the electric invention provides a connection method of the circuit member, in which the first circuit configuration 2 circuit electrode is disposed opposite to each other In the state, the second circuit member of the first circuit member and the bonding film for connecting the first circuit member and the first member are heated and 8 201222568 38757pif force: the Si circuit electrode and the 2 The circuit electrodes are electrically connected, and the second circuit under the above-mentioned circuit base is formed on the main surface of the one board - if the circuit member is connected as described above: the circuit connection of the clear circuit is connected by the cured product of the following medium Second, by: π opposite electric ": === can be deformed, and has a good two-body suppressable circuit member with two two: the present invention provides a kind of subsequent use for circuit connection:: picker late: The thickness of the insulating layer and the thickness of the insulating adhesive layer Ti and the conduction: the thickness of the insulating layer of the insulating agent layer and the conductive agent layer are contained in the adhesive layer and the adhesive agent layer, and the thickness of the insulating layer is _, The use of the above = is to make the first The i-th circuit member and the second circuit member are electrically connected to each other with the second electrode of the second electrode and the second circuit electrode being opposite to each other, wherein the i-th circuit member is formed on the main surface of the circuit board having a thickness of 〇3 _ or less. In the first circuit electrode, the second lightning element is formed on the second circuit board having a thickness of 〇·3 legs or less, and the second circuit electrode is formed.

Ti/Tc^l.5... (1) 201222568. 膜來著膜用於電路連接，即便當使用該連接 此予以連接日G3 _以下的電路基板的電路構件彼 導：接(=: 伏:生固化劑。若為接著劑層具有如上所二 含⑷成膜材料、2電/=劑層中的接著劑組成物包 接著膜’射實錢優及（G)潛伏㈣化劑的 又’當將上述接著膜用於電;J性著 .此，可轉更優異的連射有⑷絕緣性粒子。藉 用、路下的電路連接用接著膜及其使 造方法以及電路構件的^^的=連接構造體及其製 即便當用於將厚度比先箭的上述電路連接用接著膜 板與半導航件予叫鱗厚度更薄的玻璃基 且可抑制玻璃基板的變形，而且的連接可靠性 發明中，可提供如下的電亦優異。尤其於本 接著m即便當將職0妾=:膜’該電路連接用 連接時，亦可實現上述效果。m以下的電路構件彼此予以 為讓本發明之上述和其他目的、特徵和優點能更明顯 201222568 38757pif 並配合所附圖式，作詳細說 易懂，下文特舉較佳實施例 明如下。 【實施方式】 以下，根據需要’ -面參照圖式，一面詳細地對本發 明的較佳實施形態進行綱。然而，本㈣衫 下的實施形態。 ' <電路連接用接著膜> 本實施形_電路連接賴著膜是如下的電路連接用 膜丄該Ϊ路連接用接著膜包括：含有接著劑組成物及 性接著_、與含有接著劑組成物且不含 *道Φ粒子的絕緣性接著劑層’絕緣性接著綱的厚度Ti ，、導電性接著騎的厚度Te滿足下述式⑴的關係。Ti/Tc^l.5... (1) 201222568. The film is used for the circuit connection, even when the connection is made to connect the circuit components of the circuit board of the day G3_ below: (=: volts : a raw curing agent. If the adhesive layer has the above-mentioned two (4) film-forming materials, the second electric / = agent layer in the adhesive composition package film followed by the film 'shooting money excellent and (G) latent (four) agent 'When the above-mentioned adhesive film is used for electricity; J-type. This can be used to transfer more excellent insulating particles (4), and the use of the underlying film for the circuit connection and its manufacturing method and circuit components. The connection structure and the system thereof can suppress the deformation of the glass substrate and can be reliably connected even when the glass substrate is used to connect the above-mentioned circuit having a thickness smaller than the first arrow with the thickness of the film and the half-navigation member. In the invention, it is possible to provide the following electric power. Especially in the case of the connection of the circuit, the above-mentioned effect can be achieved even when the circuit is connected to the circuit. The circuit components below m are given to each other. The above and other objects, features and advantages of the invention will be more apparent in 201222568 38757pif and DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described in detail below. [Embodiment] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings. However, the embodiment of the present invention is a film for connecting a circuit. The present invention is a film for connecting a circuit, and the film for connection for the circuit connection includes: an adhesive composition. The thickness and the thickness of the insulating adhesive layer 'insulating adhesive layer' containing the adhesive composition layer containing the adhesive agent composition and the thickness of the conductive layer B satisfy the following formula (1).

Ti/Tc^l.5... (1) 乡照圖1來對本實施形態的電路連接用接著膜 垃田二明。圖1是表示本發明的—個實施形態的電路連 —者獏的模式剖面圖。電路連接用接著膜1()包括：含 盥报成物⑪及導電粒子5的導電性接著劑層3b、 -電性接著劑層儿上且含有接著劑組成物4a的 絕緣性接著劑層3a。 (導電性接著劑層） 沾阳ί成^電性接著劑们b的接著劑組成物4b並無特別 、义疋’可包含：（a)成膜材料（以下，有時稱為「（a) 11 201222568 38757pif 成分」）、（b)環氧樹脂（以下，有時稱為 (c):二固Γ劑(以下，有時稱為「(c)成分二」 作為（a)成分的成膜材料是聚合物 」 有使液狀的固化性樹脂組成物固化的作=使^ 材料包含於固化性樹脂組成物，藉此 ，成膜 成物成形為膜狀時，可獲得不易裂開、不易碎裂及=月曰= 連且易於使用的接著劑膜。 不易黏 作為如上所述的成膜材料，例如可列舉選 ^樹脂、聚乙婦甲輯脂、聚苯乙稀樹脂、聚乙稀丁 脂、聚醋樹脂、聚酿胺樹脂、二甲苯樹脂 ； ，组㈣一種聚合物，脂中，笨氧=;树= S曰樹知及聚乙烯了賴脂難。這些卿與⑴成分之 =溶性，異’可使固化之後的電路連接用接著膜ι〇“ 優異的接著性、耐熱性、以及機械強度。 使雙官能苯酚類與表鹵代醇（epihal〇hydrin)發生反 ，直至達到高分子量為止，或使雙官能環氧樹脂與^官能 苯龄類發生加絲合反應，藉此來獲得苯氧基樹脂。具體 而言，於存在鹼金屬氫氧化物等的觸媒的條件下在^反 應性溶射’ a 4Gt〜12(TC的溫度來使丨莫耳的雙官能 苯紛類與謂5莫耳〜i.oi5莫耳的表鹵代醇發生反應，藉 此，可獲得上述苯氧基樹脂。 〜9 β較佳為將雙官能性環氧樹脂與雙官能性苯酚類的調配 當量比設為環氧基/苯酚羥來進行獲得苯 氧基樹脂的加成聚合反應。藉此，可使固化之後的電路連 12 201222568Ti/Tc^l.5 (1) The following film for the circuit connection of this embodiment is shown in Fig. 1 . BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a circuit of an embodiment of the present invention. The circuit-connecting adhesive film 1 () includes a conductive adhesive layer 3b containing the ruthenium report 11 and the conductive particles 5, and an insulating adhesive layer 3a containing the adhesive composition 4a on the electrical adhesive layer. . (Electrically Conductive Adhesive Layer) The adhesive composition 4b of the electric adhesive b is not particularly suitable, and may include: (a) a film-forming material (hereinafter, sometimes referred to as "(a) 11 201222568 38757pif component"), (b) epoxy resin (hereinafter referred to as (c): disolidotrope (hereinafter, sometimes referred to as "(c) component 2") The film material is a polymer, and the liquid curable resin composition is cured. The material is contained in the curable resin composition, whereby when the film-forming product is formed into a film shape, it is not easily cracked. It is not easy to be broken and is suitable for use as an adhesive film which is easy to use. It is not easy to be used as a film-forming material as described above, and examples thereof include a resin selected from the group consisting of a resin, a polystyrene resin, a polystyrene resin, and a polyethylene. Rare butter, polyester resin, polyamine resin, xylene resin; Group (4) a polymer, fat, stupid oxygen =; tree = S 曰 tree knows that polyethylene is difficult to lysate. These qing and (1) ingredients =Solubility, different 'can make the circuit connection after curing the film ι" "Excellent adhesion, heat resistance, and mechanical strength The bifunctional phenol is reacted with an epihalohydrin (epihalhydrhydrin) until a high molecular weight is reached, or a bifunctional epoxy resin is reacted with a functional benzene age to obtain a phenoxy group. a base resin. Specifically, in the presence of a catalyst such as an alkali metal hydroxide, a reactive spray 'a 4Gt~12 (the temperature of TC is used to make the bifunctional benzene of the 丨mole The above-mentioned phenoxy resin is obtained by reacting the ear ~i.oi5 molar epihalohydrin. 〜9β is preferably a ratio of the equivalence ratio of the bifunctional epoxy resin to the bifunctional phenol. The addition polymerization reaction of the phenoxy resin is carried out for the epoxy group/phenol hydroxy group. Thereby, the circuit after curing can be connected 12 201222568

設為50質量份以下 聚合反應。 前！I為用以獲得笨氧基樹脂的雙官能環氧獅，例如可 产Γ = A型核氧樹脂、雙驗F型環氧樹脂、雙紛AD型 = 又盼S型環氧樹脂、聯苯二縮水甘油鱗及經甲 土取代的聯縮水甘油醚。作為雙官能苯盼類，可列舉 具有兩個苯陳雜的物f，例如對苯二_、雙驗A、 雙齡F、㈣AD、雙㈣、物g、經f基取代的雙齡第、 -經基聯苯及經甲絲代的二經基聯料的雙盼類。 亦可藉由自由基聚合性的官能基'或其他反應性化合 物來對苯氧基樹脂進行改f。可單獨地使用上述各種苯氧 基樹脂’或可組合地㈣兩m的上述各鮮氧基樹脂。 、己二酸、壬二 1,4-丁二醇、1，5- 聚胺酯樹脂是於分子鏈中具有胺基甲酸酯鍵結的彈性 體，且通常疋大致以當量來使飽和聚酯樹脂的活性氫基、 與二異氰_化合物（甲苯三錢_旨、二異氰酸醋二苯 基甲烧、六亞甲基二異氰酸g旨、苯二亞甲基二異氛酸醋、 以及二異氰酸g旨環己基甲料）的二異氰_旨基發生反應 所得的線性高分子，上述飽和聚s旨樹脂是多元酸（對苯二 甲酸、間苯二甲酸、鄰苯二甲酸、琥珀酸 二 酸、以及癸二酸等）、與二元醇（乙二醇、 13 201222568^ 以及丙二酸楚己二醇、二乙二醇、三乙二醇、聚乙二醇、 上诚=)發生縮合反應而獲得且具有末端羥基。 r舻胺賴樹脂容易溶解於有機溶劑例如酉旨系（乙酸 丁顆等)、_系（甲基乙基酮、環己嗣、以及丙 氣乙嫌方-族系（曱苯、二甲苯、以及苯等）及氯系（三 氯乙烯、二氣甲烷等）的溶劑。 性㉝聚日乙^ Γ樹脂是於分子鏈巾具有乙烯祕單元的彈 /疋使乙酸乙烯酯聚合，接著進行鹼處理之後， 择〜Γ酸、乙酸、丙搭、以及丁酿等）發生反應而 供、丄呵分子。對於本實施形態中所使用的聚乙烯丁 -、曰而口 &合度較佳為700〜2500，丁縮酸化度較佳 為65 mol%以上。 =聚合度不足 ’則聚乙烯丁翻脂的凝聚力不 ’導致成雜下降。若聚合度超過2·，麟樹脂進行 f接時的樹脂流输不足，無法順利地使導電粒子介於被 ^接體的電極之間’從而難以獲得充分的連接可靠性。又， 右丁縮酸化度不足65 m〇i%，則經基或乙醯基的比择 加，從而難以獲得充分的連接可靠性。 θ 「τ作成崎料的玻璃轉移溫度（以下稱為 Tg」）並,，.、特別的限定，但較佳為贼〜贼，更 45。(：〜航，進吨料紙〜赃。若為具有^ 的成膜材料’則藉由彈性變形來將固化 g =膜：產生的内部應力予以吸收，使電路 里減小’因此T更確實地使連接可靠性提高。 相對於總質量為1〇〇質量份的接著劑組成物扑而言， 201222568 38757pif 成膜材料的調配量較佳為l〇質量份〜5〇質量份，更佳為 20質量份〜4G質量份。使成膜材料的量處於上述範圍，藉 此，可進一步抑制基材的變形（翹曲量），從而提供電氣^ 接性更優異的電路連接用接著膜1〇。 成膜材料的分子量越大，則越容易獲得成膜性，而且 可大範圍地設定對接著劑組成物4b的流動性產生影響的 熔融黏度。成膜材料的重量平均分子量（Mw)較佳 〜150000，尤佳為10000〜8〇〇〇〇。若該值為5〇〇〇以上， 則存在易於獲得良好的成膜性的傾向，另一方面，若上述 值為15 0000以下，則存在容易獲得與其他成分之間的良好 的相溶性的傾向。 再者，所謂上述「重量平均分子量」，是指依照下述表 1所示的條件且根據凝膠滲透色譜法（Gel Permeati〇nThe polymerization reaction is carried out in an amount of 50 parts by mass or less. before! I is a bifunctional epoxy lion used to obtain a stupid oxy resin. For example, it can produce Γ = A type nucleating oxygen resin, double type F type epoxy resin, double argon type AD = s type epoxy resin, biphenyl Diglycidyl scales and conjugated glycidyl ethers substituted with alumina. Examples of the bifunctional benzophenones include those having two benzenes, such as p-benzoic acid, double-assay A, double-aged F, (four) AD, double (tetra), and g-substituted, two-year-old substituted by the f-group. - a double-preferred class of biphenyl and transmethylated di-based binders. The phenoxy resin may also be modified by a radical polymerizable functional group or other reactive compound. The above various oxyalkyl resins may be used singly or in combination of (four) two m of each of the above fresh oxygen resins. Adipic acid, stilbene 1,4-butanediol, 1,5-polyurethane resin is an elastomer having a urethane bond in a molecular chain, and usually 疋 is substantially equivalent to a saturated polyester resin Active hydrogen group, and diisocyanate compound (toluene three money _, diisocyanate bisphenol ketone, hexamethylene diisocyanate g, benzene dimethylene diisocyanate And a linear polymer obtained by reacting a diisocyanate of a diisocyanate g-cyclohexylcarbamate, wherein the resin is a polybasic acid (terephthalic acid, isophthalic acid, ortho-benzene) Dicarboxylic acid, succinic acid, and sebacic acid, and glycols (ethylene glycol, 13 201222568^ and malonate, diethylene glycol, triethylene glycol, polyethylene glycol, Shangcheng =) is obtained by a condensation reaction and has a terminal hydroxyl group. r amide lysine resin is easily dissolved in an organic solvent such as hydrazine (butyl acetate, etc.), _ series (methyl ethyl ketone, cyclohexyl hydrazine, and propylene sulphur-trione (toluene, xylene, And a solvent such as benzene or the like, and a chlorine-based (trichloroethylene, di-methane, etc.). The property is a polystyrene resin which has a vinyl moiety in a molecular chain towel to polymerize vinyl acetate, followed by a base. After the treatment, the choice of ~ tannic acid, acetic acid, acrylic, and brewing, etc.) reaction to supply, 丄 molecules. The polyethylene terpene, the oxime and the ampule used in the present embodiment are preferably 700 to 2500, and the degree of butylation is preferably 65 mol% or more. = Insufficient degree of polymerization 'The cohesive force of the polyethylene defatted fat does not cause a decrease in the complexity. When the degree of polymerization exceeds 2, the resin flow during the f-bonding of the lining resin is insufficient, and the conductive particles cannot be smoothly interposed between the electrodes of the bonded body, so that it is difficult to obtain sufficient connection reliability. Further, if the degree of dextran condensation is less than 65 m〇i%, the ratio of the base group or the acetamidine group is increased, so that it is difficult to obtain sufficient connection reliability. θ "τ is the glass transition temperature (hereinafter referred to as Tg) of the raw material, and is particularly limited, but is preferably a thief-thief. (: ~ hang, into the ton of paper ~ 赃. If it is a film-forming material with ^, by the elastic deformation to cure the g = film: the generated internal stress is absorbed, so that the circuit is reduced 'so T is more sure The connection reliability is improved. The amount of the 201222568 38757pif film-forming material is preferably from 1 part by mass to 5 parts by mass, more preferably 20%, based on the total mass of the adhesive composition of the mass. When the amount of the film-forming material is in the above range, the deformation (warpage amount) of the substrate can be further suppressed, and the film-attached bonding film 1 更 which is more excellent in electrical compatibility can be provided. The larger the molecular weight of the film-forming material, the easier it is to obtain film-forming properties, and the melt viscosity which affects the fluidity of the adhesive composition 4b can be set widely. The weight average molecular weight (Mw) of the film-forming material is preferably ~ 150000 is particularly preferably 10000 to 8 Torr. If the value is 5 Å or more, it tends to be easy to obtain good film formability. On the other hand, if the value is 15 000 or less, it is easy. Acquired with other ingredients The above-mentioned "weight average molecular weight" means the conditions shown in Table 1 below and according to gel permeation chromatography (Gel Permeati〇n).

ChfGmatGgraphy ’ GPC) ’使用標準聚苯乙烯的校準曲線 (calibration curve )來進行測定所得的值。 [表1] 裝置 東曹股份有限公司製造GPC-8020 檢測器 東曹股份有限公司製造RI-8020 管柱 曰立化成工業股份有限公司製造Gelpack --GL-A-160-S + GL-A150-SG2000Hhr 試料濃度 ---- ---120 mg/3 ml___ 溶劑 ------------四氫0夫嗔 ✓主入量 --——_______60 μΐ_ 壓力 -------------30 kgf^cm2__ 流量 ------ -LOO ml/min 作為（b)成分的環氧樹脂，可單獨或組合兩種以上地 使用自表氯醇與選自包含雙酚A、雙酚f及雙酚AD等的 15 201222568 38757pif 群組的至少一種雙酚衍生出的雙酚型環氧樹脂、自表氣 與苯酚酚醛及甲酚醛中的一種酚醛或兩種酚醛衍生出的酚 醛環氧樹脂、具有包含萘環的骨架的萘系環氧樹脂、以及 縮水甘油胺、縮水甘油醚、聯苯、及脂環式等的於一個分 子内具有兩個以上的縮水甘油基的各種環氧化合物等。1 據防止電遷移（electromigrati〇n )的觀點，環氧樹浐 為使用使雜質離子（ion) (Na+、cl-等）或水解性 至300ppm以下的高純度品。 ” ^ 上述環氧樹脂中，由於可廣泛地獲得分子量不 級（grade) ’且可任意地對接著性或反應性等進 寺 因此’雙_環氧樹贿佳。雙盼型環氧樹脂中，: 脂尤佳。雙酚_環氧樹脂的黏度低，藉： 軋基树驗合地使用，可容易且 ^ Ϊ膜1〇的流動性進行設定…雙紛F型; ==優點’即’容易使電路連接用接著膜 =構^氧樹脂的調配量不足5質量份2的0 接著膜1〇H構；^^行壓接時，存在電路連接用 5〇質量份的情形下Γ進的傾於環氧樹脂的調配量超過 接著膜H)發生變形的；向订長期保管時，存在電路連接用 為（c)成刀即潛伏性固化劑，例如可列舉味唾系、 201222568 胺化醯亞胺及雙氛胺。可單獨地使用上述潛伏性 〒化:1或可組合地使用兩種以上的上述潛伏性 土 :將广㈣化劑與分解促進劑、抑制以組 使㈣_長，較佳為利«胺醋系、 ^^ 質等來將潛伏性固化劑予以包覆而實現 質量份的環氧樹脂而言，潛伏性固化劑的 調配罝較佳為10質量份〜200暂 1C一 貝 υ貝置份，更佳為100質量份 量份。藉此，於固化反射，可獲得充分的反應 2。右潛伏性固化劑的調配量不足1〇質量份，則益法獲得 =的反鱗’㈣存在難轉得良好的接著強度及連接 電阻的傾向。若潛伏性固化劑的調配量超過200質量份， 則存在如下的傾向，例如電路連接用接著膜10的流動性下 降接電阻上升，電路連接用接著膜1G的適用期（pot Hie)縮短。 於接著劑組成物4b中分散有導電粒子5。由於 $接著膜10含有導電粒子5，@此，電路電極的位置或 ，度的不均因導電粒子5的變形而被吸收，接觸面積增 i菩獲得更穩定的電性連接。x，由於電路連接用 雷拉雷有導電粒子5，因此，導電粒子5有時可衝破 電路電極表面輒化層祕態層而發生細，從而可 性連接更穩定。 作為如上所述的#電粒子5,可列舉Au、An Cu、以及焊料的金雜子或餘子#。崎獲得充分的 17 201222568tChfGmatGgraphy ’ GPC) 'The measured value was measured using a calibration curve of standard polystyrene. [Table 1] Device Dongcao Co., Ltd. manufactures GPC-8020 detector manufactured by Tosoh Co., Ltd. RI-8020 Pipe column manufactured by Lihua Chemical Industry Co., Ltd. Gelpack --GL-A-160-S + GL-A150- SG2000Hhr sample concentration------120 mg/3 ml___ solvent ------------ tetrahydro 0 嗔 主 ✓ main input amount --- _______60 μΐ_ pressure ------ -------30 kgf^cm2__ Flow rate ------ -LOO ml/min Epoxy resin as component (b), which can be used alone or in combination of two or more kinds from epichlorohydrin and selected from the group consisting of Bisphenol A, bisphenol f, bisphenol AD, etc. 15 201222568 38757pif group of at least one bisphenol-derived bisphenol type epoxy resin, self-gas and phenol novolac and phenolic phenolic or two phenolic a derived novolac epoxy resin, a naphthalene epoxy resin having a skeleton containing a naphthalene ring, and glycidylamine, glycidyl ether, biphenyl, and alicyclic, etc., having two or more glycidol in one molecule Various epoxy compounds and the like. 1 From the viewpoint of preventing electromigration (electromigrati〇n), epoxy tree 浐 is a high-purity product using impurity ions (ion) (Na+, cl-, etc.) or hydrolyzability to 300 ppm or less. ^ ^ In the above epoxy resin, since the molecular weight grade can be widely obtained and can be arbitrarily attached to the susceptibility or reactivity, it is better than the double-epoxy resin. ,: The fat is especially good. The viscosity of bisphenol_epoxy resin is low, by: the use of the rolling base tree for the combination, it is easy to set the liquidity of the Ϊ film 1〇... double F type; == advantage' 'Easy to make the connection film for the circuit connection = the amount of the oxygen-containing resin is less than 5 parts by mass 2, and then the film is 1〇H structure; when the pressure is pressed, there is a case where the circuit is connected with 5 parts by mass. The amount of the epoxy resin to be blended exceeds that of the film H); when it is stored for a long period of time, there is a circuit connection for (c) a knife, that is, a latent curing agent, for example, a salivation system, 201222568 amination The above-mentioned latent deuteration can be used singly: 1 or two or more of the above-mentioned latent soils can be used in combination: a broadening agent and a decomposition accelerator, and a grouping (4)_long Preferably, it is an amine vinegar system, a ^^ quality, etc. to coat the latent curing agent to achieve a mass fraction. In the case of the epoxy resin, the latent curing agent is preferably formulated in an amount of 10 parts by mass to 200 parts per 1C of a shellfish, more preferably 100 parts by mass, whereby a sufficient reaction can be obtained in the curing reflection. 2. If the amount of the right latent curing agent is less than 1 part by mass, then the anti-scale of the positive method = (4) has a tendency to have a good adhesion strength and a connection resistance. If the latent curing agent is more than 200. In the case of the mass component, for example, the fluidity of the bonding film for circuit connection 10 is increased, and the pot life of the bonding film 1G for circuit connection is shortened. The conductive particles are dispersed in the adhesive composition 4b. 5. Since the film 10 contains the conductive particles 5, @, the positional or unevenness of the circuit electrodes is absorbed by the deformation of the conductive particles 5, and the contact area is increased to obtain a more stable electrical connection. Since the circuit connection uses Rayleigh to have the conductive particles 5, the conductive particles 5 may sometimes break through the surface layer of the circuit electrode and become fine, so that the flexible connection is more stable. As the above-mentioned #Electroparticle 5 , can be listed Lift Au, An Cu, and solder of gold miscellaneous or surplus #. Saki gets full 17 201222568t

yj t mf I 適用期的觀點，導電粒子5的最外層並非為Ni、Cu等的 過渡金屬類，較佳為Au、Ag、以及麵金屬的貴金屬類， 其中，Au更佳。又，導電粒子5可為利用Au等的貴金屬 類來將Νι等的過渡金屬類的表面予以包覆而成的導電粒 子，亦可為藉由包覆等來將上述金屬等的導通層形成於非 導電性的玻璃、陶瓷（ceramic)、以及塑膠（piastic)等且 將最外層設為貴金屬類的導電粒子。 車又佳為使用藉由包覆等來將導通層形成於塑膠而成的 粒子或熱熔融金屬粒子作為導電粒子5。上述粒子因加熱 及加壓而具有變形性，因此’可使在連接時與電路電極^ 生接觸的接觸面積增加，或可將電路構件的電路端子的厚 度不均予以吸收，從而可使電路連接的可靠性提高。 设置於導電粒子5的最外層的貴金屬類的包覆層的厚 度較佳為100A以上。藉此，可充分地使所連接的電路之 間的電阻減小。然而，於在Ni等的過渡金屬上設置責金屬 類的包覆層的情形時，該包覆層的厚度較佳為3〇〇人以上。 理由在於：由於在導子5齡分散時產生的貴金屬類 的包覆層的缺損等，Ni㈣過渡金屬露出域著劑膜中，、 因此，由於該過渡金屬的氧化還原作用而產生游離、自由 基，從而使電路連接用接著膜10的保存穩定性下降。另一 方面’貴金屬類的包覆層的厚度的上限並無特別的， 但根據製造成本的觀點，較佳為丨μιη以下。 膜 且 導電粒子5的平均粒徑必須比藉由電路連接用接 10來連接的電路構件的相鄰接的電極的最小間隔更小， 201222568 38757pif 於電路電極的高度存在不均的情科，上述 平均粒徑較佳為大於鶴度的科。導電粒子$的物 徑較佳為1 μηι〜ίο μιη，更佳為2 的千均粒 1 马μ 5帅。若平均粒徑 不f 1 μιη，則存在如下的傾向，即’無法對應於 的向度的不均且電路電極之間的導紐容易下降 垃 則存在相鄰接的電路電極之間的絕緣性 ^者’上述「平均粒徑」是指以如下的方式所測定的 值。亦即，利用掃描型電子顯微鏡（SEM( Scanning扭沈杜 M1Crosc〇pe)，mtachi，Ltd 製造，產品名：s__)來 意地選擇的導電粒子的一次粒子進行觀察（倍率^ 5〇〇〇 倍）’對该一次粒子的最大徑及最小徑進行測定。將該最大 ，及最小徑的積的平方根設為上述粒子的一次粒徑。接 f，針對50個任意地選擇的導電粒子，以上述方式&對一 ••人粒杈進行測定，將一次粒徑的平均值設為平均粒徑。再 =，亦同樣地對後述的（d)絕緣性粒子的平均粒徑進行測 定。 ' 相對於總質量為100質量份的接著劑組成物4b而言， 導電粒子5的調配量較佳設為0‘丨質量份〜30質量份，更 佳没為〇·1質量份〜2〇質量份。藉此，可防止由過剩的導 電粒子5引起的鄰接電路的短路等。 又，根據用途，接著劑組成物4b例如亦可更含有軟化 劑、抗老化劑、阻燃劑、色素、觸變劑（thix〇tr〇pic agent)、 以及妙烷偶合劑（silane coupling agent)等的添加劑。 19 201222568 38757pif (絕緣性接著劑層） =接著劑層3a ,所含的接著劑組成物 即著=路構件連接時抑制電路構件 的Li :: 可與導電性接著劑層％中所含 3 同’柯無接著賴絲扑不同。 使絕緣性接著綱％的流動性大於導電性 動性的方式，對上述成分的種類及調配量 導電性接著劑層3b及/或絕緣性接著劑層％可更含有 緣性粒子（以下，有時稱為「⑷成分」）。藉此， 、固化之後的接著劑層_内部應力進一步被緩和。再 者導電性接著劑層儿及絕緣性接著劑層％更佳為均含 有（d)絕緣性粒子。 一作為如上所述的（d)絕緣性粒子，例如可列舉矽土、 氧化鋁等的無機粒子；或聚矽氧橡膠、甲基丙烯酸曱酯_ 丁二烯·苯乙烯（Methylmethacrylate Butadiene Styrene， mbs)、丙烯酸橡膠、聚曱基丙烯酸甲酯、及聚丁二烯橡 膠等的有機粒子。 又’作為（d)絕緣性粒子，除了上述粒子以外，例如 亦可列舉丙烯酸樹脂、聚酯、聚胺酯、聚乙烯丁醛、聚芳 酉曰、聚本乙稀、丁腈橡膠（Nitrile Butadiene Rubber，NBR)、 本乙烤-丁二稀橡膠（Styrene Butadiene Rubber，SBR)及 聚石夕氧改質樹脂等以及含有包含這些物質作為成分的共聚 物的粒子。絕緣性粒子較佳為分子量為1〇〇萬以上的有機 201222568 38757pif 微粒子或具有三維交聯構造的有機微粒子。此種絕緣性粒 ^對於固化性組成物的分散性高。再者，此處所謂「具有 二維交聯構造」，是表示聚合物鏈具有三_狀構造 如，利用具有兩個以上的可與聚合物的反應點鍵結的官At 基的交聯劑來對具有多個反應點的聚合物進行處理，藉= 來獲得具有如上所述的構造的絕緣性粒子。分子量為曰1〇〇 萬以上的有機微粒子及具有三維交聯構造的有機微粒子較 佳為對於溶獅溶解性均低。對於溶劑的溶解性低的上述 ，緣性粒子可更顯著地獲得上述絲。又，根據更顯著地 獲传上述效果的觀點’分子量為丨⑻萬以上的有機微粒子 及具有三維交聯構造有機難子較佳為包含（^基)丙婦酸 烷基-聚石夕ft共聚物、聚石夕氧_(甲基)丙稀酸共聚物或上述共 來物的錯合物的絕緣性粒子。又，例如亦可使用如日本專 利特開2_指573公報所揭示的聚醯舰粒子及聚醯亞 胺粒子等的絕緣性粒子作為（d)成分。 此外，亦可使用具有核殼（c〇re shell)型的構造且核 層的組成與殼層的組成不同的絕緣性粒子作為（d )成分。 作為核殼型的絕緣性有機粒子，具體而言可列舉以聚石夕氧_ 丙烯酸橡膠作為核來對⑽酸樹脂進行接枝所得的粒子、 及以丙烯酸共聚物作域來朗雜樹脂進行接枝所得的 粒子等。又，亦可使用如國際專利公開第2009/051067號 小冊子所揭示的核殼型聚矽氧微粒子、 2〇〇9/〇2〇〇〇5 婦苯乙烯共聚物或錯合物、（曱基)丙婦酸烷基酯聚矽氧共 21 201222568 38757pif 聚物或錯合物及聚矽氧_(曱基）丙烯酸共聚物或錯合物等 的絕緣性有機粒子、如日本專利特開2〇〇2_256〇37號公報 所揭示的核殼構造聚合物粒子、以及如日本專利特開 2004-18803號公報所揭示的核殼構造的橡膠粒子等。可單 獨地使用-種上㈣殼型的絕緣錄子，亦可組合地使用 兩種以上的上述核殼型的絕緣性粒子。再者，此種（d)絕 緣性粒子的平均粒徑較佳為〇.〇1 μιη〜2 μιη左右。 於導電性接著劑層3b含有（d)絕緣性粒子的情形時 相對於總質量為1()() f量份的接著齡成物4b而言，（d 、’、邑、、彖I1 生粒子及導電粒子5的合計調配量較佳為⑽質量份t 下’更佳為6G質量份以下。若絕緣性粒子及導電粒子的j 計調配量超過8Gf量份，_在成赚及騎電極的㈤ 力下降的傾向。又，於絕緣性接著劑層％含有⑷絕矣 ，粒子的情形時’相對於總質量為⑽質量份的接著船 、、物4a而a ’⑷絕緣性粒子的調配量較佳為質量名 更佳為4G質量份以下。絲緣性粒子的調配量超3 m繼細⑽贿5_極的密以 =性接著劑層3b的厚度Tc較佳為3卿〜12卿， 更^ 5 μηι〜Π) μηι。又’絕緣性接著劑層％的厚度丁 =為12 μιη〜2〇㈣，更佳為14 μιη〜ΐ6师。由 上所述的厚度’因此，可使作業 : 性及連接彳#絲射好。 録于楝捉 而且’電路連接用接著膜10的厚度較佳為1〇师〜4〇 22 201222568 JO tu /pif =°若該厚度不^1G哗，則存在如下的傾向，即，無法 ^全地將被黏接體之間的空間予以填埋，接著力會下降， ^上这厚度超過4〇 μιη，則存在如下的傾向，即，於進行 壓接時，樹脂會溢出，從而污染周邊零件。 再者，對於本實施形態的電路連接用接著膜而言，絕 緣性接著劑層的厚度Ti與導電性接著劑層的厚度Tc滿足 l，5$Tl/Tc的關係，但較佳為1.5gTi/Tcg6.5，更佳為 IMiVTcas，進而較佳為i 5^Ti/Tc^4.5。藉由將兩 個層的厚度之比設為如上所述的數值範®，即便於使膜固 ，之後’亦可更確實地將固化物内的内部應力控制為低内 °隨力’且可更確實地使整個固化物具有均-且充分的彈 性率。 ，者，可以如下的方式來對絕緣性接著劑層3a及導電 性接^劑層3b的「厚度」進行測定4即，針對已製作的 f接著劑層，使用數位MU-CHECKER (Mitutoyo公司製 造，產品名·· MU_CHECKER)來對1〇個任意地選擇的部 位的厚度it行败，將厚度的平均值設為各接賴層的「厚 ^」。又j於導電性接著劑層3b與絕緣性接著劑層3a已貼 合的情形時’使用數位HF顯微鏡（mic聰ope)(基恩斯 (KeyenCe)公司製造’產品名：VH-Z450 (顯微鏡）、 VH 8000 (本體））來對個任意地選擇的部位的厚度進 行測定，將厚度的平均值設為各接著劑層的「厚度」。 將與導電性接著劑層3b相關的包含接著劑組成物仆 及導電粒子5的混合物、與絕緣性接著劑層％相關的包含 23 201222568 接著劑組成物4a的混合物分別溶解或分散於有機溶劑來 實現液狀化，調製出塗佈液，將該塗佈液例如塗佈於剝離 性基材（支持膜）上，以固化劑的活性溫度以下的溫度來 將溶劑予以除去，藉此，可形成導電性接著劑層3b及絕緣 性接著劑層3a。 作為形成導電性接著劑層3b及絕緣性接著劑層3a的 其他方法，可列舉如下的方法，即，分別對導電性接著劑 層3b及絕緣性接著劑層3a的構成成分進行加熱以確保流 動性之後，添加溶劑來形成塗佈液，將該塗佈液塗佈於剝 離性基材上，以固化劑的活性溫度以下的溫度來 以除去。 β山根據使接著劑組成物4a及接著劑組成物仆的溶解性 ，高的觀點，此時㈣的溶龜佳為芳香紐系溶劑與含 氧系溶 +劑的混合溶劑。又，作為剝離性基材，例如可列舉 苯一甲酉曼乙二醇酯（P〇lyethylene Terephthalate， 键认f丙烯、聚㈣、以及㈣等的具有耐熱性及耐溶 PET膜等° ^。尤佳使驗表面處理而具有脫模性的 ;J離J·生基材的厚度較佳為2〇卿〜卿。若該厚度不 以谁則存在如下的傾向，即，於進行臨時壓接時難 用拔二!，右上述厚度超過75 μΐη ’則存在於電路連接 Ζ膜10 _離性基材之間產生捲繞滑脫的傾向。 2電路連接用接著膜1()的製法，例如可採用對以上 工〉成的導電性接著劑層4b及絕緣性接著劑層如進 24 201222568 38757pif 行層壓（laminate)的方法、或依序對各層進行塗佈的方法 等的眾所周知的方法。 本實施形態的電路連接用接著膜可用作覆晶玻璃 (Chip On Glass’ COG)等的安装過程中的將玻璃等比較 硬的基板與半導體元件予以接合的異向導電性接著劑。 例如，可於使電路連接用接著膜介於玻璃基板及半導 體元件等的電路構件之間陳態下進行加熱及加壓，將兩 者所具有的電路電極彼此予以電性連接。此處，當使用有 基板的厚度為0.3 mm以下的電路構件時，翹曲尤其會成 為問題，尤其於此種情形時，可有效果地使用本實施離 的電路連接用接著膜。 u 亦即，可將如下的接著膜用於電路連接用途，該接著 膜包括.含有接著齡成物及導電粒子的導電性 層、與含有接㈣域物且不含有導餘子的絕緣 劑層，絕緣性接著劑層的厚度Ti、盘$ 茶 Γ滿足下述式⑴的關係，上述 第1電路電極及第2電路電極相對向陳態下，將在户 為〇.3 _以下的第i電路基板的主面上形成有第i 電極的第1電路構件、與在厚度為G3麵以下 t 路基板的主面上形成有第2電路電極的第2電路 電性連接。 再忏于以Yj t mf I From the viewpoint of the application period, the outermost layer of the conductive particles 5 is not a transition metal such as Ni or Cu, and is preferably a noble metal such as Au, Ag or a surface metal, of which Au is more preferable. In addition, the conductive particles 5 may be conductive particles obtained by coating a surface of a transition metal such as Νι with a noble metal such as Au, or may be formed by coating a conductive layer such as the above-mentioned metal by coating or the like. Non-conductive glass, ceramic, and plastic, and the outermost layer is made of a noble metal conductive particle. Further, it is preferable to use the particles or the hot molten metal particles in which the conductive layer is formed of a plastic layer by coating or the like as the conductive particles 5. Since the particles are deformed by heating and pressurization, the contact area which can be brought into contact with the circuit electrode at the time of connection can be increased, or the thickness of the circuit terminal of the circuit member can be absorbed unevenly, so that the circuit can be connected. The reliability is improved. The thickness of the cladding layer of the noble metal provided on the outermost layer of the conductive particles 5 is preferably 100 A or more. Thereby, the electric resistance between the connected circuits can be sufficiently reduced. However, when a metal-clad coating layer is provided on a transition metal such as Ni, the thickness of the coating layer is preferably 3 〇〇 or more. The reason is that the Ni (tetra) transition metal is exposed in the coating film due to the defect of the noble metal coating layer generated when the derivative is dispersed at the age of 5, and therefore, free radicals are generated due to the redox action of the transition metal. Therefore, the storage stability of the film-attached adhesive film 10 is lowered. On the other hand, the upper limit of the thickness of the coating layer of the noble metal is not particularly limited, but it is preferably 丨μηη or less from the viewpoint of production cost. The average particle diameter of the film and the conductive particles 5 must be smaller than the minimum interval of the adjacent electrodes of the circuit member connected by the circuit connection terminal 10, 201222568 38757pif is inconsistent in the height of the circuit electrode, the above The average particle size is preferably greater than that of the crane. The conductive particle $ has a diameter of preferably 1 μηι to ίο μιη, more preferably 2 is a thousand granules. When the average particle diameter is not f 1 μm, there is a tendency that the unevenness of the dimension which cannot be matched and the guide between the circuit electrodes are likely to fall, and the insulation between the adjacent circuit electrodes exists. The above "average particle diameter" refers to a value measured in the following manner. That is, the primary particles of the conductive particles which are intentionally selected by scanning electron microscopy (SEM (Scanning, M1Crosc〇pe), mtachi, Ltd., product name: s__) are observed (magnification ^ 5 times) 'Measure the maximum diameter and the minimum diameter of the primary particles. The square root of the product of the maximum and minimum diameters is defined as the primary particle diameter of the particles. Then, for 50 randomly selected conductive particles, one or more human particles were measured in the above manner, and the average value of the primary particle diameters was defined as an average particle diameter. Further, the average particle diameter of the (d) insulating particles described later was also measured in the same manner. With respect to the adhesive composition 4b having a total mass of 100 parts by mass, the amount of the conductive particles 5 is preferably set to 0'丨 part by mass to 30 parts by mass, more preferably not more than 1 part by mass to 2 parts. Parts by mass. Thereby, it is possible to prevent a short circuit or the like of the adjacent circuit caused by the excessive conductive particles 5. Further, depending on the use, the adhesive composition 4b may further contain, for example, a softener, an anti-aging agent, a flame retardant, a dye, a thixotropic agent, and a silane coupling agent. Additives such as. 19 201222568 38757pif (insulating adhesive layer) = adhesive layer 3a, the adhesive composition contained in the adhesive member is connected to the circuit member, and the Li: can be suppressed from the conductive adhesive layer. 'Ke does not follow Lai Sipu different. The type of the above-mentioned component and the amount of the conductive adhesive layer 3b and/or the insulating adhesive layer % may further contain a rim particle (hereinafter, there is a case where the fluidity of the insulating layer is greater than the conductivity kinetic property) It is called "(4) component"). Thereby, the adhesive layer_internal stress after curing is further alleviated. Further, it is more preferable that the conductive adhesive layer and the insulating adhesive layer % contain (d) insulating particles. As the (d) insulating particles as described above, for example, inorganic particles such as alumina or alumina; or polyoxyethylene rubber, methacrylic acid acrylate or butadiene styrene (Methylmethacrylate Butadiene Styrene, mbs) may be mentioned. ), organic particles such as acrylic rubber, polymethyl methacrylate, and polybutadiene rubber. Further, as the (d) insulating particles, in addition to the above particles, for example, an acrylic resin, a polyester, a polyurethane, a polyvinyl butyral, a polyarylene, a polyethylene, a nitrile rubber (Nitrile Butadiene Rubber) may be mentioned. NBR), Styrene Butadiene Rubber (SBR), polysulfide modified resin, and the like, and particles containing a copolymer containing these substances as a component. The insulating particles are preferably organic 201222568 38757pif microparticles having a molecular weight of 10,000 or more or organic microparticles having a three-dimensional crosslinked structure. Such an insulating granule has high dispersibility for a curable composition. In addition, the term "having a two-dimensional crosslinked structure" herein means that the polymer chain has a three-like structure, such as a crosslinker having two or more official At groups bonded to a reaction point of the polymer. The polymer having a plurality of reaction sites is treated to obtain insulating particles having the configuration as described above. The organic fine particles having a molecular weight of 10,000 or more and the organic fine particles having a three-dimensional crosslinked structure are preferably low in solubility for the lion. The above-mentioned filaments can be obtained more remarkably by the above-mentioned edge particles having a low solubility in a solvent. Further, according to the viewpoint of more remarkablely transmitting the above effects, the organic fine particles having a molecular weight of 丨(8) million or more and the organic hard particles having a three-dimensional crosslinked structure preferably contain a (meth)c-butanoic acid-polylithium ft copolymer. Insulating particles of a complex, a polyoxo-(meth)acrylic acid copolymer or a complex of the above-mentioned co-forms. Further, as the component (d), for example, insulating particles such as polythene particles and polyamidene particles disclosed in Japanese Laid-Open Patent Publication No. Hei. Further, as the component (d), an insulating particle having a structure of a core shell type and having a composition of a core layer different from that of the shell layer may be used. Specific examples of the core-shell type insulating organic particles include particles obtained by grafting (10) an acid resin with a polysulfide-acrylic rubber as a core, and a resin obtained by using an acrylic copolymer as a domain. Particles obtained from the branches, etc. Further, a core-shell type polyoxynene microparticle, a 2〇〇9/〇2〇〇〇5 styrene styrene copolymer or a complex compound disclosed in the pamphlet of International Patent Publication No. 2009/051067, Insulating organic particles such as a polyacrylic acid alkyl ester polyoxyl oxylate 21 201222568 38757pif polymer or a complex compound or a polyfluorene sulfonium (meth) acryl copolymer or a complex compound, such as Japanese Patent Laid-Open No. 2 The core-shell structure polymer particles disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. 2004-180803, and the rubber particles of the core-shell structure disclosed in Japanese Laid-Open Patent Publication No. 2004-18803. Insulating recordings of the above-mentioned (four) shell type may be used singly, or two or more kinds of insulating particles of the above-described core-shell type may be used in combination. Further, the average particle diameter of the (d) insulating particles is preferably about 〇1 μιη to 2 μιη. In the case where the conductive adhesive layer 3b contains (d) insulating particles, (d, ', 邑, 彖, I1 raw) with respect to the subsequent ageing product 4b having a total mass of 1 () () f parts. The total amount of the particles and the conductive particles 5 is preferably (10) parts by mass, and more preferably 6 parts by mass or less. If the amount of the insulating particles and the conductive particles exceeds 8 Gf, the amount of the particles is increased. (5) The tendency of the force to decrease. In addition, in the case of the insulating adhesive layer, (4) in the case of particles, in the case of particles, the distribution of the insulating particles of the ship, the material 4a and the a '(4) insulating particles with respect to the total mass is (10) parts by mass. Preferably, the mass name is more preferably 4 G parts by mass or less. The blending amount of the silk fibroin particles is more than 3 m, and the thickness of the adhesive layer 3b is preferably 3 qing to 12 Qing, more ^ 5 μηι~Π) μηι. Further, the thickness of the insulating adhesive layer % is 12 μm 2 to 2 Å (four), more preferably 14 μm η to ΐ 6 division. From the thickness described above, it is possible to make the work: the sex and the connection 彳# silk. It is recorded in the 楝 catch and the thickness of the film 10 for circuit connection is preferably 1 〜 〜 〇 〇 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 2012 The ground is filled with the space between the bonded bodies, and then the force is lowered. When the thickness exceeds 4 〇 μιη, there is a tendency that the resin may overflow when the crimping is performed, thereby contaminating the peripheral parts. . Furthermore, in the adhesive film for circuit connection of the present embodiment, the thickness Ti of the insulating adhesive layer and the thickness Tc of the conductive adhesive layer satisfy the relationship of 1,5$Tl/Tc, but preferably 1.5gTi. /Tcg6.5, more preferably IMiVTcas, and further preferably i 5^Ti/Tc^4.5. By setting the ratio of the thicknesses of the two layers to the numerical value of the above, even if the film is solidified, the internal stress in the cured product can be more reliably controlled to be lower than the internal force. More reliably, the entire cured product has a uniform-and sufficient elastic modulus. The "thickness" of the insulating adhesive layer 3a and the conductive adhesive layer 3b can be measured as follows. 4, that is, a digital MU-CHECKER (Mitutoyo Co., Ltd.) is used for the prepared f-substrate layer. The product name·· MU_CHECKER) is used to determine the thickness of one of the arbitrarily selected parts, and the average value of the thickness is set to "thickness ^" of each of the adjacent layers. In the case where the conductive adhesive layer 3b and the insulating adhesive layer 3a are bonded to each other, 'using a digital HF microscope (manufactured by KeyenCe)' product name: VH-Z450 (microscope), VH 8000 (body) measures the thickness of an arbitrarily selected portion, and the average value of the thickness is the "thickness" of each adhesive layer. The mixture containing the adhesive composition layer 3b and the mixture of the conductive particles 5 and the insulating adhesive layer layer containing 23 201222568 of the adhesive composition layer 4a are dissolved or dispersed in an organic solvent, respectively. The liquid is liquefied to prepare a coating liquid, and the coating liquid is applied, for example, to a release substrate (support film), and the solvent is removed at a temperature equal to or lower than the activation temperature of the curing agent. The conductive adhesive layer 3b and the insulating adhesive layer 3a. As another method of forming the conductive adhesive layer 3b and the insulating adhesive layer 3a, a method of heating the constituent components of the conductive adhesive layer 3b and the insulating adhesive layer 3a to ensure flow is exemplified. After the addition, a solvent is added to form a coating liquid, and the coating liquid is applied onto the release substrate and removed at a temperature equal to or lower than the activation temperature of the curing agent. From the viewpoint of the solubility of the adhesive composition 4a and the adhesive composition, the β-mountain is preferably a mixed solvent of an aromatic solvent and an oxygen-containing solvent. Further, examples of the releasable substrate include a heat-resistant and solvent-resistant PET film such as P 〇 ethylene 乙二醇 乙二醇 乙二醇 乙二醇 键 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The thickness of the J-base material is preferably 2〇卿~卿. If the thickness is not, the following tendency exists, that is, when temporary crimping is performed. It is difficult to use the second! The thickness of the right side exceeds 75 μΐη′, which tends to cause the winding slip between the circuit-connecting ruthenium film 10 and the detachable substrate. 2 The method for manufacturing the film 1() for circuit connection, for example, A well-known method such as a method of laminating a conductive adhesive layer 4b and an insulating adhesive layer, such as a method of laminating 24 201222568 38757pif, or a method of sequentially coating each layer. The adhesive film for circuit connection according to the embodiment can be used as an anisotropic conductive adhesive for bonding a relatively hard substrate such as glass to a semiconductor element during mounting of a chip on glass (COG) or the like. For connecting the film to the film Heating and pressurization are performed between the glass substrate and the circuit member such as the semiconductor element, and the circuit electrodes of the two are electrically connected to each other. Here, the thickness of the substrate is 0.3 mm or less. In the case of a circuit member, warpage is particularly problematic, and in particular, in this case, the adhesive film for circuit connection of the present embodiment can be used effectively. u That is, the following adhesive film can be used for circuit connection use. Next, the film includes a conductive layer containing a subsequent ageing substance and conductive particles, and an insulating agent layer containing a (four) domain material and containing no conductive particles, and the thickness Ti of the insulating adhesive layer and the disk Γ Γ satisfy the following In the relationship of the formula (1), the first circuit member and the second circuit electrode are opposed to each other, and the first circuit member having the i-th electrode is formed on the main surface of the i-th circuit board having a size of 〇.3 _ or less. It is electrically connected to the second circuit in which the second circuit electrode is formed on the main surface of the t-channel substrate having a thickness of G3 or less.

Ti/Tc>1.5... (1) 25 201222568 38757pif 再者，當使用有基板的厚度進而為〇2 mm以下的電 路構件時，_的_更㈣。可使財實細彡態的電路 連接用接著膜的電路基板的厚度的下限只要可維持各自的 機械性強度，則無問題，該下限較佳為G G5mm以上，更 佳為0.08 mm以上。 通常，於玻璃基板或半導體元件等的電路構件中設置 有夕個（有時亦可為單數）電路電極。相對向地對設置於 相對向地配置的電路構件的電路電極的至少—部分進行配 置’於使電路連接祕著财於相對向聽置的電路電極 之間的狀態下進行加熱及加壓，藉此，可將姉向地配置 的電路電極彼辭以電性連接而獲得電路連接構造體。 ^此’藉由對相對抗地配置的電路構件進行加熱及加 觸及S = Z的^路電極彼此藉由經由導電粒子的接 ^直接接觸中的—種接觸方式或兩種接觸方式而電性連 <電路連接構造體> 圖2是表示於一對電路構件即基板1與半導體元件 本實施形態的電路連接用接著膜ig的積心 η :、剖面圖’目3是表示對圖2所示的積層體2( 1 〇 〇V^ ’ M @ €得的本實施形態的電路連接構造ί 100的模式剖面圖。 〔第，3雷所示的電路連接構造體100包括：於玻璃基板1a f g 1 φ路基板）的主面上形成有配線圖案（pattern) ib 路電極）的基板1 (第1電路構件）、於積體電路 26 201222568 38757pif (Integrated Cnxuit，IC)曰曰曰片（chip) 2a (第 2 電路基板） 的主面上形成有凸塊（bump)電極21)(第2電路電極）的 半導體元件2 (第2電路構件）、以及介於基板丨及半導體 元件2之間的電路連接用接著膜1〇的固化物如及固化物 6b (連接部）。於電路連接構造體1〇〇中，配線圖案沁及 凸塊電極2b於相對向地配置的狀態下電性連接。 此處，配線圖案lb較佳為由透明導電性材料形成。典 型而s ’將銦-錫氧化物（Indium Tin Oxide，ITO)用作透 明導電性材料。又，凸塊電極2b由具有可作為電極而發揮 功能的程度的導電性的材料（較佳為選自包含金、銀、錫、 在白知的金屬及ITO的群組的至少一種材料）形成。 於電路連接構造體100中’相對抗的凸塊電極2b及配 線圖案lb彼此經由導電粒子5而電性連接。亦即，導電粒 子5與凸塊電極2b及配線圖案lb均直接發生接觸，藉此 來將凸塊電極2b及配線圖案lb予以電性連接。 對於電路連接構造體100而言，由於藉由電路連接用 接著膜10的固化物6a及固化物6b來將基板1與半導體元 件2予以接合，因此，即便當電路構件的厚度薄（0.3 mm • 以下）時，亦可充分地抑制基板1的翹曲，且可獲得優異 ' 的連接可靠性。 如上所述的電路連接構造體100可經由如下的步驟來 製造。亦即，可藉由如下的製造方法來製造上述電路連接 構造體100，該製造方法包括如下的步驟：使本實施形態 的電路連接用接著膜介於一對電路構件之間而獲得積層 27 201222568 JO/J/pif 體，該一對電路構件包括在厚度為 0.3 mm以下的破 板la (第1電路基板）的主面上形成有配線圖案卟丄 電路電極）的基板1 (第1電路構件）、及在厚度為0飞1 以下的1C晶片2a (第2電路基板）的主面上形右: 電極2b(第2電路電極）的半導體元件2(第2電路樯^ 以及對積層體進行加熱及加壓而使電路連接用’ 化，藉此來形成連接部，該連接部介於一對電路構件、固 且以使相對向地配置祕線圖案lb (第i電路電極曰’ 塊電極2b (第2電路電極）電性連接的方式，將一 構件彼此予以接著。 +電路 <電路構件的連接方法> 藉由如下的方法來獲得電路連接構造體⑽ 配線圖案lb及凸塊電極2b相對向地配置的狀態下， 玻璃基板la的主面上形成有配_案lb的基板丨’Ti/Tc>1.5... (1) 25 201222568 38757pif Further, when a circuit member having a thickness of the substrate and further 〇 2 mm or less is used, _ is further (four). The lower limit of the thickness of the circuit board for the connection film for the circuit of the financial connection can be maintained as long as the mechanical strength can be maintained. The lower limit is preferably G G5 mm or more, and more preferably 0.08 mm or more. Usually, a circuit electrode (sometimes singular) is provided in a circuit member such as a glass substrate or a semiconductor element. The at least part of the circuit electrode provided on the circuit member disposed oppositely is disposed to be heated and pressurized in a state in which the circuit is connected to the circuit electrode that is relatively audible. In this way, the circuit electrodes can be electrically connected to each other to obtain a circuit connection structure. ^This is by means of heating and contacting the circuit components that are relatively resistant to ground, and the electrodes of S = Z are electrically connected to each other by direct contact through the conductive particles or by two kinds of contacts. <Circuit Connection Structure> FIG. 2 is a view showing a center η of a connection film ig for circuit connection of the substrate 1 and the semiconductor element in the present embodiment, and a cross-sectional view of FIG. A schematic cross-sectional view of the circuit connection structure ί 100 of the present embodiment in which the laminated body 2 (1 〇〇V^ ' M @ € is shown. [The third circuit-connected structure 100 includes: on a glass substrate The substrate 1 (first circuit member) on which the wiring pattern ib electrode is formed on the main surface of the 1a fg 1 φ road substrate), and the integrated circuit 26 201222568 38757pif (Integrated Cnxuit, IC) chip ( a semiconductor element 2 (second circuit member) having a bump electrode 21) (second circuit electrode) formed on a main surface of a chip 2a (second circuit board), and a substrate 丨 and a semiconductor element 2 The circuit is connected with a cured product of the film 1 如Cured material 6b (connecting portion). In the circuit connection structure 1A, the wiring pattern 沁 and the bump electrode 2b are electrically connected in a state of being disposed opposite to each other. Here, the wiring pattern 1b is preferably formed of a transparent conductive material. Indium Tin Oxide (ITO) is typically used as a transparent conductive material. Further, the bump electrode 2b is formed of a conductive material (preferably selected from at least one selected from the group consisting of gold, silver, tin, and a group of metals and ITO in white) which can function as an electrode. . The bump electrodes 2b and the wiring patterns 1b which are opposed to each other in the circuit connection structure 100 are electrically connected to each other via the conductive particles 5. That is, the conductive particles 5 are in direct contact with the bump electrodes 2b and the wiring pattern lb, whereby the bump electrodes 2b and the wiring patterns 1b are electrically connected. In the circuit-connecting structure 100, since the substrate 1 and the semiconductor element 2 are bonded by the cured product 6a and the cured product 6b of the bonding film 10 for circuit connection, even when the thickness of the circuit member is thin (0.3 mm • In the following case, the warpage of the substrate 1 can be sufficiently suppressed, and excellent connection reliability can be obtained. The circuit connection structure 100 as described above can be manufactured through the following steps. In other words, the circuit connection structure 100 can be manufactured by the following manufacturing method, and the manufacturing method includes the step of: forming a laminate 27 by interposing a bonding film for circuit connection of the present embodiment between a pair of circuit members 27 201222568 In the JO/J/pif body, the pair of circuit members includes a substrate 1 (a first circuit member in which a wiring pattern 卟丄 circuit electrode is formed on a main surface of a broken plate la (first circuit substrate) having a thickness of 0.3 mm or less) And the semiconductor element 2 of the electrode 2b (second circuit electrode) on the main surface of the 1C wafer 2a (second circuit board) having a thickness of 0 Å or less (the second circuit 以及^ and the laminated body) The connecting portion is formed by heating and pressurizing to connect the circuit, and the connecting portion is interposed between the pair of circuit members so as to be disposed so as to face the secret line pattern lb (the i-th circuit electrode 曰' block electrode 2b (the second circuit electrode) is electrically connected, and one member is connected to each other. + Circuit <Connection method of circuit member> The circuit connection structure (10) wiring pattern lb and bump electrode are obtained by the following method 2b relative to the ground The opposite state, a main surface of the glass substrate la lb case has a substrate with Shu _ '

晶片2a的主面上形成有凸塊電極沘的半導俨 C 導體元件2之間的電路連:用接著二 進订加熱及加壓，將配線圖$ lb及凸塊電極 ^ 〇 連接。 4 μ电性 上述方法可準備以如下的方式形成的積 ^在板將基材Λ的電路連接用接著膜 合 膜1〇進行臨時壓接，將剝離性基材予以剝 準電路電極，-面將半導體元件2放置於面二 後進行加熱及加壓，基板！、電路連接用=半= 28 201222568 38757pif 體元件2依序積層。 根據電路連接用接著膜10中 著劑組成物仆_性等，騎地對層4^ 進灯力:熱及加Μ的條件，使得電路連接用接著膜⑺固化之 後獲得充分的接著強度。 、 根據使用有本實施形態的電路連接用接著膜 件的連接方法，即便當電路構件的厚度薄⑷醜 t亦可抑魏路構件_曲，且可獲得良好的連接可靠 [實例] 以下’列舉實例來更具體地對本發明進行說明。然而， 本發明並不限定於這些實例。 (1)電路連接用接著膜的準備 如下所述，準備用以製作導電性接著劑層及絕緣性接 著劑層的各材料。又，稱量出約10mg的成膜材料，利用 TA Instruments公司製造的DSC裝置（產品名：Q1〇〇〇) 且依據JIS K7121-1987的規定來對成膜材料的Tg進行測 定。 (a) 成分：成膜材料 「FX-316」（東都化成（Tohto Kasei)製造，產品名）： 苯氧基樹脂（Tg : 66它） (b) 成分.壤乳樹脂 「EXA-4850-150」（DIC 製造，產品名） 「YL-980」（曰本環氧樹脂（japan Epoxy Resins)製 29 201222568 38757pif 造，產品名） (C):潛伏性固化劑 「Novacure」（旭化成化學（Asahi Kasei Chemicals) 製造，產品名） (d):絕緣性粒子 「X-52-7030」（信越矽利光（Shin-Etsu Slicone)製 造’產品名） (導電粒子） 「MicropearlAU」（積水化學製造，產品名） (添加劑） 「SH6040」（東麗道康寧（Toray Dow Corning)製造， 產品名）：矽烷偶合劑 (2 )接著劑層形成用的塗佈液的調製 以如下所述的方式來調製出導電性接著劑層形成用的 塗佈液及絕緣性接著劑層形成用的塗佈液。 <導電性接著劑層形成用的塗佈液> (塗佈液A1) 將30質量份的苯氧基樹脂rFX_316」、5質量份的瓖 氧樹脂「EXA-4850-150」及15質量份的「YL-980」、20 質罝份的潛伏性固化劑「Novacure」以及1質量份的石夕烧 偶合劑「SH6040」溶解於1〇〇質量份的曱苯之後，添加10 質量份的聚矽氧微粒子γχ_52_7〇3〇」及19質量份的導電 粒子「Micropead au」，調製出塗佈液Α卜 (塗佈液A2) 201222568 38757pif 以表2所示的調配比例（質量份）來添加各成分，除 此以外，與塗佈液A1同樣地調製出塗佈液A2。 <絕緣性接著劑層形成用的塗佈液> (塗佈液B1) 將50質量份的苯氧基樹脂「Fx_316」、28質量份的環 氧樹脂「YL-980」’ 18質量份的潛伏性固化劑「N〇vacure」 及1質量份的矽烷偶合劑「SH6040」溶解於1〇〇質量份的 作為溶劑的曱苯之後’添加3質量份的聚矽氧子 「X-52-7030」，調製出塗佈液B1。 (塗佈液B2) 以表2所示的調配比例（質量份）來添加各成分，除 此以外’與塗佈液B1同樣地調製出塗佈液B2。 [表2] 導電性接著劑層形成用塗佈 液 絕緣性接著劑層形成用塗 佈液On the main surface of the wafer 2a, a circuit connection between the semi-conducting C conductor elements 2 of the bump electrodes 形成 is formed: the wiring pattern $ lb and the bump electrode ^ 〇 are connected by the subsequent two-step heating and pressurization. 4 μ Electrically, the above method can be prepared by temporarily bonding the circuit-bonding film 1 〇 of the substrate 在 in the following manner, and stripping the peeling substrate to the circuit electrode. After the semiconductor element 2 is placed on the surface 2, it is heated and pressurized, and the substrate! For circuit connection = half = 28 201222568 38757pif Body element 2 is layered sequentially. According to the composition of the composition in the adhesive film 10 for circuit connection, the grounding force is applied to the layer 4: heat and twisting conditions, so that sufficient adhesion strength is obtained after the circuit-attached film (7) is cured. According to the connection method using the bonding film member for circuit connection according to the present embodiment, even when the thickness of the circuit member is thin (4), the component of the circuit member can be suppressed, and good connection reliability can be obtained. [Example] The examples are intended to more specifically illustrate the invention. However, the invention is not limited to these examples. (1) Preparation of adhesive film for circuit connection Each material for producing a conductive adhesive layer and an insulating adhesive layer was prepared as follows. Further, about 10 mg of the film-forming material was weighed, and the Tg of the film-forming material was measured by a DSC apparatus (product name: Q1〇〇〇) manufactured by TA Instruments and in accordance with the regulations of JIS K7121-1987. (a) Ingredients: Film-forming material "FX-316" (manufactured by Tohto Kasei, product name): phenoxy resin (Tg: 66 it) (b) Ingredients. Loam resin "EXA-4850-150" (Manufactured by DIC, product name) "YL-980" (made by japan Epoxy Resins 29 201222568 38757pif, product name) (C): latent curing agent "Novacure" (Asahi Kasei) (manufacturer, product name) (d): Insulating particle "X-52-7030" (product name manufactured by Shin-Etsu Slicone) (conductive particle) "MicropearlAU" (product of Sekisui Chemical Co., Ltd., product name) (Additive) "SH6040" (manufactured by Toray Dow Corning, product name): decane coupling agent (2) Preparation of coating liquid for forming an adhesive layer to prepare conductivity in the following manner Then, the coating liquid for forming the agent layer and the coating liquid for forming the insulating adhesive layer are formed. <Coating liquid for forming a conductive adhesive layer> (Coating liquid A1) 30 parts by mass of phenoxy resin rFX_316", 5 parts by mass of epoxy resin "EXA-4850-150" and 15 masses The "YL-980", the 20-mesh latent curing agent "Novacure", and the 1 part by mass of the Shiki-burning coupling agent "SH6040" are dissolved in 1 part by mass of toluene, and 10 parts by mass are added. Polysiloxane particles γχ_52_7〇3〇” and 19 parts by mass of conductive particles “Micropead au” were prepared to prepare a coating liquid (coating liquid A2) 201222568 38757pif was added in the mixing ratio (parts by mass) shown in Table 2 The coating liquid A2 was prepared in the same manner as the coating liquid A1 except for the respective components. <Coating liquid for forming an insulating adhesive layer> (Coating liquid B1) 18 parts by mass of phenoxy resin "Fx_316" and 28 parts by mass of epoxy resin "YL-980"' 18 parts by mass The latent curing agent "N〇vacure" and 1 part by mass of the decane coupling agent "SH6040" are dissolved in 1 part by mass of the terpene benzene as a solvent, and 3 parts by mass of the polyoxonium "X-52-" is added. 7030", the coating liquid B1 is prepared. (Coating liquid B2) The coating liquid B2 was prepared in the same manner as in the coating liquid B1 except that the respective components were added in the mixing ratio (parts by mass) shown in Table 2. [Table 2] Coating liquid for forming an adhesive layer, coating liquid for forming an insulating adhesive layer

(實例1) &lt;導電性接著劑層&gt; 使用塗佈裝置（（股）康井精機公司製造，產品名：精 密塗佈機）來將塗佈液A1塗佈於單面（塗佈有塗佈液的 31 201222568 JO / J /pif G趿她以脫模處理（中剝離 服膜’以机來進行1〇分 的厚度為50 _的 膜上形成厚度為1 一料紐接著^ 此，於PET 〈絕緣性接著綱 &gt; 考_ 與上述同樣地，使用塗佈 T產品名:精密塗佈機)來將4=::， 被施以脫模處理的厚度為5〇帅的ρΕτ膜以^面已 行10分鐘的熱風乾燥，藉此，於ΡΕΤ膜上形 ^來進 的絕緣性接著劑層。 為ΐ5μηι &lt;電路連接用接著膜&gt; -面以5(TC來對上述所獲得的導電性接著劑層與 緣性接著劑層進行加熱’―面利㈣層壓機（哺 laminator)來進行層壓，獲得厚度為25 μηι的電路 接著膜。 用 (實例2〜實例5及比較例1〜比較例3) 使塗佈液的種類（Al、Α2、Bl、Β2)及接著劑層的 厚度（Tc、Ti)分別如表3所示，除此以外，與實例1同 樣地進行操作來製作電路連接用接著膜。 [表3] 實例 比較你1 塗佈液 接著劑層的厚度（μηι) 1 2 3 4 5 1 2 λ A1 Tc 10 7 5 - - 12 15 B1 Ti 15 18 20 - - 13 10 A2 Tc - - - 10 5 - 1? B2 Ti - - 15 20 鲁 - 13 (2)電路連接構造體的製作 32 201222568ir &lt;基板及半導體元件的準備&gt; 準備於玻璃基板（康寧（Corning) #1737，38 mmx28 mm’ 尽度為 〇_3 mm)的表面形成有 ΐτ〇( Indium Tin Oxide) 的配線圖案（圖案寬度為50μη1，電極之間的空間為5μιη) 的基板。準備1C晶片（外形為π mm&gt;&lt;17 mm，厚度為〇 3 mm，凸塊的大小為5〇 pmX5〇 μιη，凸塊之間的空間為5〇 μηι，凸塊高度為15 μιη)作為半導體元件。 &lt;基板及半導體元件的連接&gt; 使用上述實例及比較例中所製作的電路連接用接著 膜，以如下所示的方式來將IC晶片與玻璃基板予以連接。 再者，將由包含陶瓷加熱器（ceramic heater)的平台（stage) (150mmxl5〇mm)及工具（3inmx2〇mm)構成的加熱 壓接件用於連接。 首先 將電路連接用接著膜（1.5mmx2〇mm)的導電 性接著劑層上&amp; PET膜予以剝離，於贼、〇 %咖（】〇 kgf/cm )的條件下進行2秒的加熱及加壓，藉此來將導電 性接著劑層面_於朗基板。接著，將電路連接用接 膜的絕緣性接著劑層上的PET膜予以剝離，使K晶片的 ^塊與玻縣板對準之後，於電路連制接著⑽^則最 南到達溫度為1W：及凸塊電極面積鮮壓力為7〇胁 ^條件下’自1C晶片上方進行1G秒的加熱 晶片，經由電路連接用接著膜K 曰曰片與玻璃基板進行主連接。 (3)評價 33 201222568 38757pif (成膜性） 膜性進行評價。再者成電路連接=著膜的成 膜不易裂開、不易碎裂、不易 ，，、、膜」’疋指已製作的 表示於表4中。 不易黏連。將成膜性的評價結果 A ··可形成膜 B :無法形成膜 (翹曲） 圖。=所賴式剖面 路，著膜10構成。L表示當將4;=:電 的基板1的下表面的高度設為〇日夺，直 的中心相隔U.5醜處為止的基板】H矣、+導體轉2 :大值。以L為指標來對翹曲進行評價。中= 表不翹曲越小。將L的值不足15帅的情形 八、:則 L的值為15 μηι以上的情形設為「 ^ 」，將 評價。將魅曲的評價結綠=表4」^兩個階段來進行 晶^厚的玻璃基板及- =順序，使用上述實例及比較例中所二=== 膜來進行連接，製作接合體。對所獲得的接合體的2 曲進仃评價之後，接合體的翹曲均不足15 m。 也 (連接可靠性） μιη° 34 201222568 38757pif(Example 1) &lt;Electrically conductive adhesive layer&gt; The coating liquid A1 was applied to one side (coated with a coating device (manufactured by Kane Seiki Co., Ltd., product name: precision coater)) Coating solution 31 201222568 JO / J /pif G趿 She is released from the mold (the middle peeling film is machined to a thickness of 50 _ on the film to form a thickness of 1). In the case of PET <insulating adhesives>, in the same manner as described above, using a coating T product name: a precision coater, 4 =::, a ρ Ε 膜 film having a thickness of 5 脱 〇 The insulating adhesive layer was formed on the enamel film by hot air drying for 10 minutes, and the insulating adhesive layer was formed on the ruthenium film. ΐ5μηι &lt; adhesive film for circuit connection&gt; - face was 5 (TC) The obtained conductive adhesive layer and the edge adhesive layer were subjected to heating by a 'Laminator' (Laminator) to obtain a circuit-attached film having a thickness of 25 μm. (Example 2 to Example 5 and Comparative Example 1 to Comparative Example 3) The types (Al, Α2, Bl, Β2) of the coating liquid and the thickness (Tc, Ti) of the adhesive layer were as shown in Table 3, respectively. In the same manner as in Example 1, except for the above, an adhesive film for circuit connection was produced. [Table 3] Example comparison of the thickness of the coating layer of the coating liquid (μηι) 1 2 3 4 5 1 2 λ A1 Tc 10 7 5 - - 12 15 B1 Ti 15 18 20 - - 13 10 A2 Tc - - - 10 5 - 1? B2 Ti - - 15 20 Lu - 13 (2) Fabrication of the circuit-connected structure 32 201222568ir &lt;Substrate and Preparation of semiconductor device&gt; A wiring pattern of ΐτ〇 (Indium Tin Oxide) was formed on the surface of a glass substrate (Corning #1737, 38 mm x 28 mm' 尽 _3 mm) (the pattern width was 50 μη1, The substrate between the electrodes is 5 μm. The 1C wafer is prepared (the shape is π mm &gt;&lt;17 mm, the thickness is 〇3 mm, the size of the bump is 5 〇 pmX5 〇 μιη, and the space between the bumps is 5 〇μηι, bump height is 15 μm) as a semiconductor element. &lt;Connection of Substrate and Semiconductor Element&gt; Using the bonding film for circuit connection produced in the above examples and comparative examples, the IC chip was formed in the following manner. Connected to the glass substrate. Furthermore, it will consist of ceramics Platform device (ceramic heater) is (Stage) (150mmxl5〇mm) and tools (3inmx2〇mm) constituting the heating element for connecting the crimp. First, the circuit connection is peeled off on the conductive adhesive layer of the adhesive film (1.5 mm x 2 mm) and the PET film is peeled off, and heated for 2 seconds under the conditions of thief, 〇% coffee () 〇kgf/cm). Pressing, thereby taking the conductive adhesive layer _ _ 朗 substrate. Next, the PET film on the insulating adhesive layer of the circuit-connecting film is peeled off, and the K-die is aligned with the glass plate, and then the circuit is connected (10) to the southmost temperature of 1 W: And the bump electrode area fresh pressure is 7 〇 under the condition of '1C second heating wafer from the top of the 1C wafer, and the glass substrate is connected to the glass substrate via the circuit connection bonding film K. (3) Evaluation 33 201222568 38757pif (film formation property) The film properties were evaluated. Further, the circuit connection is as follows: the film formation of the film is not easily cracked, is not easily broken, and is not easy, and the film "" is produced in Table 4. Not easy to stick. Evaluation result of film formability A ·· Formable film B: Film (warpage) picture could not be formed. = The section of the road is formed by the film 10 . L indicates that the height of the lower surface of the substrate 1 of 4; =: is set to 〇, and the center of the straight center is separated from the U.5 ugly portion] H矣, + conductor turns 2: large value. The warpage was evaluated using L as an index. Medium = The smaller the table is, the less warp. When the value of L is less than 15 handsome 八:: If the value of L is 15 μηι or more, it is set to "^" and will be evaluated. In the two stages of the evaluation of the melody, the green glass substrate and the -= sequence were used, and the film was joined using the two === films in the above examples and comparative examples to produce a bonded body. After the evaluation of the obtained two joints of the joined body, the warpage of the joined body was less than 15 m. Also (connection reliability) μιη° 34 201222568 38757pif

使用已製作的電路連接構造體來對玻璃基板的電路與 半導體元件的電極之間的電阻值進行測定。使用萬用電錶 (multimeter)(裝置名：MLR2卜ETAC公司製造），於溫 度為85°C，濕度為85%RH的1000小時的熱濕度測試 (Thermal Hiimidity Test，THT)之後進行測定。基於 THT 測試之後的電阻值且依據以下的基準，以A或B該兩個階 段來對連接可靠性進行評價。將各電路連接構造體的測定 結果表示於表4中。 A :不足10Ω B : 10Ω以上 [表4]The resistance value between the circuit of the glass substrate and the electrode of the semiconductor element was measured using the fabricated circuit connection structure. The measurement was carried out using a multimeter (device name: MLR2, manufactured by ETAC Co., Ltd.) at a temperature of 85 ° C and a humidity of 85% RH for 1000 hours of Thermal Himidity Test (THT). Based on the resistance values after the THT test and based on the following criteria, the connection reliability was evaluated in two stages, A or B. The measurement results of the respective circuit connection structures are shown in Table 4. A : Less than 10 Ω B : 10 Ω or more [Table 4]

本發明的電路連接用接著膜即便當用於將厚度薄的電 路構件彼辭以連接時，成麟、_及連接可靠 現出優異的特性。 、雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明’任何熟習此技藝者，在不脫離本發明之精神 35 201222568, 護 ^範圍内’當可作些許之更動與潤飾，因此本 軌圍當视後社_料職騎衫者鱗。 ’、 【圖式簡單說明】 膜的以本發明的一個實施形態的電路連接用接著The adhesive film for circuit connection of the present invention exhibits excellent characteristics even when used for connecting thin circuit members. Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the invention to any skilled person in the art, and without departing from the spirit of the invention 35 201222568, Retouching, so this track is regarded as a post-collector. </ br> simplification of the drawing] The circuit is connected to the circuit of one embodiment of the present invention.

路:於一對電路構件之間插入有本實施形態的 接著膜的積層體的模式剑面圖。 。圖疋表示本實施雜的電㈣接構讀賴式剖运 圖4是表示玻璃基板_曲的評價方法的模式剖面 【主要元件符號說明】 1 :基板 la :玻璃基板 lb :配線圖案 2:半導體元件 2a :積體電路（1C)晶片 2b :凸塊電極 3a ··絕緣性接著劑層 3b:導電性接著劑層 4a、4b ·接著劑組成物 5:導電粒子 6a、6b :固化物 10:電路連接用接著膜 36 201222568 38/i/pif 100 :電路連接構造體 200 :積層體 L:高度的最大值 37Path: A pattern sword figure in which a laminated body of a film of the present embodiment of the present embodiment is inserted between a pair of circuit members. . FIG. 4 is a schematic cross-sectional view showing the evaluation method of the glass substrate _ 【 [main element symbol description] 1 : substrate la : glass substrate lb : wiring pattern 2 : semiconductor Element 2a: integrated circuit (1C) wafer 2b: bump electrode 3a, insulating adhesive layer 3b: conductive adhesive layer 4a, 4b, adhesive composition 5: conductive particles 6a, 6b: cured product 10: Adhesive film for circuit connection 36 201222568 38/i/pif 100 : Circuit connection structure 200 : Laminate L: Maximum value of height 37

Claims (1)

201222568 38757pif 七、申請專利範圍： I —種電路連接用接著膜，包括： 導電性接著劑層，含有接著劑組成物及導電粒子；以 及 絕緣性接著劑層，含有接著劑組成物且不含有導電粒 声的接著騎的厚度Ή與上述導電性接著劑 廣的厚度Te滿足下述式⑴的關係， Ti/Tc&gt;l.5... (1) t述電料接賴著M於在㈣丨f 的r下’將第1電路構件與第2電路構 電f生連接，其中上述第j電路構 =第^電路基板的主面上形成有上述第二 電路構件在厚度為。3mm以下的第板 、 上形成有上述第2電路電極。 其中2上項所述之電路連接用接著膜， (a) ()衣氧祕脂及（c)潛伏性固化劑。 接著膜^ 81第1項或第2摘述之電路連接用 層更含有⑷^性電^著劑層及/或上述絕緣性接著劑 4. 一種電路連接構造體，包括： 38 201222568 38757pif 第1電路構件，在 板的主面上形成有第！電^=職以下的第i電路基 第2電路構件，在厚度為 板的主面上形成有第2 ·咖以下的第2電路基 置為與上述第i電路電H且上述第2電路電極配 述第1電路電極電性連接；以^，上述第2電路電極與上 之間，〃於上述第1電路構件與上述第2電路構件 項所如申請專利範圍第1項至第3項中任-項所述之電路連接用接著膜的固化物。 貝r任 驟：5. -種電路連接構造體的製造方法，包括如下的步 使如申請專利範圍第j 對電路構件之間而獲得積=上 Ϊ! 電路構件與第2電路構件，上述 面上S右楚 ㈣下的第1電路基板的主 ^成有第1電路雜，上料2€路 =以下的第2電路基板的主面上形成有第2電路二: 以及 “對上述f層體進行加熱及加壓而使上述電路連接用接 者膜固化’藉此來形成連接部，上述連接部介於上述一對 電路構件之間，且以使相對向地配置的上述第i電路電極 與上述第2電路電極電性連接的方式，將上述一對電路 件彼此予以接著。 39 201222568 38757pif 4里电, *吩傅旰的運接方法，包括· 態下，極相對向地配置的狀 1電路構件及上述第2電路電路構件以及配置於上述第 項至第3項中任—項所 牛之間的如申請專利範圍第1 加壓，將上述第路連接用接著膜進行加熱及 連接，其中上1電路電極予以電性 電路基板的主面上形成有上度為〇.3 mm以下的第1 成有上下的第1電路基板的主面上形 括：7. -種接著膜的用於電路連接的使用，上述接著膜包 及導電f生接著劑層’含有接著劑組成物及導電粒子；以 子，絕緣性接著劑層，含有接著劑組成物且不含有導電粒 异的ίΐΐ緣^接著劑層的厚度Ή與上述導電性接著劑 層的厚度Tc滿足下述式⑴的關係， 扣 Ti/Tc^l.5... (1) mi述接著膜的用於電路連接的使用是在使第1電路雷 2電路電極相對向的狀態下， 1 電路構件予以電性連接，其中上述第1電路構 201222568 38757pif J〇.3咖以下的第丨電路基板的主面 電路電極’上述第2電路構件在厚度為0.3 == 電路基板的主面上形成有上述第2 f路電極。 利範圍第7項所述之接著膜的用於電路連 ，/述導電性接著劑層中所含有的接著劑組 成物包3 (a)成膜材料、⑻環氧樹脂及（c)潛伏性固 化劑。 9.如申請專利範圍第7項或第8項所述之接著膜的用 於電路連接的使用’其中上述導電性接著劑層及/或上述絕 緣性接著劑層更含有（d)絕緣性粒子。201222568 38757pif VII. Patent application scope: I. An adhesive film for circuit connection, comprising: a conductive adhesive layer containing an adhesive composition and conductive particles; and an insulating adhesive layer containing an adhesive composition and not containing conductive The thickness Ή of the subsequent riding of the grain sound and the thickness Te of the above-mentioned conductive adhesive satisfy the relationship of the following formula (1), Ti/Tc>1.5 (1) t The electric material is attached to M in (4) The first circuit member is electrically connected to the second circuit structure, wherein the second circuit member has a thickness of the second circuit member formed on the main surface of the circuit board. The second circuit electrode is formed on the third plate of 3 mm or less. The adhesive film for the circuit connection according to the above item 2, (a) () oxygenated secret fat and (c) latent curing agent. Next, the circuit connection layer of the first or second aspect of the film further includes a (4) electro-chemical layer and/or the above-mentioned insulating adhesive. 4. A circuit connection structure comprising: 38 201222568 38757pif 1 The circuit components are formed on the main surface of the board! The second circuit member of the i-th circuit base of the electric device is formed such that a second circuit base having a second or lower surface is formed on the main surface of the plate to be electrically connected to the ith circuit H and the second circuit electrode The first circuit electrode is electrically connected; and the second circuit electrode and the upper circuit are between the first circuit member and the second circuit member, as in the first to third items of the patent application scope. The circuit described in any of the items is connected to a cured product of the adhesive film. A method for manufacturing a circuit-connecting structure, comprising the steps of obtaining a product between the circuit members as in the patent application range: the circuit member and the second circuit member, the above-mentioned surface In the first circuit board of the upper right (4), the first circuit is formed, and the second circuit 2 is formed on the main surface of the second circuit board: The body is heated and pressurized to cure the circuit connecting connector film, thereby forming a connection portion, wherein the connection portion is interposed between the pair of circuit members, and the ith circuit electrode is disposed to face each other The second pair of circuit electrodes are electrically connected to each other, and the pair of circuit elements are connected to each other. 39 201222568 38757pif 4 里, 吩 旰 旰 旰 , , , , 吩 吩 吩 吩 吩 吩 吩 吩 吩 吩 吩 吩 吩 吩 吩1 circuit member, the second circuit circuit member, and the first pressure applied between the cows of any of the above items to the third item, and the first connecting film for the second connection is heated and connected. , where 1 electric The main surface of the first circuit board having the first upper and lower sides of the upper surface of the electric circuit board on which the upper surface is 〇.3 mm or less is formed by the electrode: 7. The film is connected to the main surface for the circuit connection. The use of the above-mentioned film package and the conductive adhesive layer "containing the adhesive composition and the conductive particles; the sub-layer, the insulating adhesive layer, the adhesive composition containing the adhesive composition and not containing the conductive particles The thickness Ή and the thickness Tc of the above-mentioned conductive adhesive layer satisfy the relationship of the following formula (1), and the Ti/Tc^l.5 (1) mi is used to make the circuit connection. 1 circuit member 2 is in a state in which the circuit electrodes are opposed to each other, and 1 circuit member is electrically connected, wherein the first circuit structure 201222568 38757pif J〇.3 is the main surface circuit electrode of the second circuit board below the second circuit member The second f-channel electrode is formed on the main surface of the circuit board having a thickness of 0.3 ==. The adhesive film according to the seventh aspect of the invention is used for circuit connection, and the adhesive contained in the conductive adhesive layer Composition package 3 (a) film forming material, (8) epoxy tree And (c) a latent curing agent. 9. The use of an adhesive film according to the invention of claim 7 or 8 wherein the conductive adhesive layer and/or the above-mentioned insulating adhesive are used. The layer further contains (d) insulating particles.
TW100120185A 2010-06-14 2011-06-09 Adhesion film for connecting circuit and usage thereof, circuit connection structure and manufacturing method thereof, and connecting method of circuit member TWI455152B (en)

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