201214832 六、發明說明： 【相關申請案之交互參照】 本申請案主張於2010年9月20日提出之韓國專利申請安第 ㈣則議9號之優先權，其内容係併人本文作為參 【發明所屬之技術領域】 以下說明係鮮體沉魏置以及㈣排放 I，的方法，制是，關於用以有效地將剩餘氣體排放 =積於上之主腔室以及單體接收於其中之單體 = 體沉積裝置，以及用以排放此裝置:之禪體的方法。卜。卩的早 【先前技術】 下-顯示裝置為具有自我發光特徵之 等方面;優編顯==、反應速率、及功率消耗 _方式連接於掃 描 線及資料線之間而構成—晝素。沉肪&含 極電極、及形成於陽極電極與陰極電極㈣ #、一陰 含—電_輸層 麵發光層及—電子傳輪層。料二# 有機薄膜 且包 定電壓至陽極電極及陰極電 雷托… 經由陰極電極注人的帝α㈣極電極注人的電洞與 比八的电子於—發 生的能量差造成光線的射出。 '° k私中所產 然而，OLED包含古丄，、， 且陰極電極*金屬形成，0 ’ '此”受到氫或氧的影 因此在空氣中容易被水氣氧化， 響 而使 201214832 電性及發射特性惡化。因此，為了改善上述缺點，由全 成之罐狀或杯狀容器或由玻璃或_所形叙囊封基板係= OLED戶斤形成之處的基板’以由密封劑（如環氧樹脂又): 使用容器或囊封基板的技術並不容易應用在薄或 OLED顯示裝置。因此’為了密封薄或可撓性〇led 囊封技術被提出。 有雜 圖_ 1顯亦薄膜囊封技術之—範例，用以交替地堆疊 及無機層於QLED 2上則彡缝制之方法鱗合qled顯曰^ 装置所需之約l〇E_6g/m2/day之水氣穿透率(wvtr)的要求 此被廣泛地使用。 參考圖2，，化為汽態的單體m係從接收液態單體之 槽21被供應至單體腔室2〇。#基板丨從主腔室丨㈣部朝體 上^時，開閉f 3G為開啟，且W m朝基板1射 L j 。單體m由UV光進行處理而轉變 為水合物’因而形成有機層3。此時，為了均⑽維 的特性(例如密度、厚度等等），將單體腔 + 、曰 氣體排出是相當重要的。在此所指的剩餘氣體:二要= 或單體m蒸氣及來源氣體)以外的氣體》亦即： ^體包1早體腔室2〇表面所排出的氣體'由單體吨料所產 〆之„乳體、以及純化供應單體m所經之流動路 氣。-般來說，為了排除氣體’真空幫浦 20以將氣體排以外部。 技早體腔至 μ. 201214832 此2卜，主腔室10維持其中的真空狀態，即約1〇E·4托耳至 約10E-7托耳之一真空。用以維持真空狀態的真空幫浦42係安 裝為連接至主腔室10。 然而’安裝於流動路徑中用以將單體腔室2〇中的剩餘氣體 排出〜真工豸浦41除了排出剩餘氣體之外，也將用以形成薄膜 之，體m排出，造成真空幫浦41在短時間内被單體所污染。真 空幫浦的嚴重汙染將造成沉積裝置的操作停止，且增加實施維 護的次數，因而降低裝置的生產率 此外，連接至單體腔室20的真空幫浦41僅用以將單體腔 至20中的剩餘氣體排出至外部，但尚未被用來將主腔室中 的真空狀態維持為相對高於單體腔室2〇。 【發明内容】 因此i為了改善上述缺點，提供一種單體沉積裝置及排放 ，裝置之單體的方法，以選擇性地將真空幫浦連接至主腔室或 單!?月，至^用以增強真空幫浦的使用，且安裝能夠恢復單體之 -單兀於單體腔室與真”浦之間，以改減”浦的維護且 降低取代真空幫浦所產生的費用。 本發明的其他特徵及方面可藉由參考以下的詳細描述、圖 式及申請專利範圍而更加清楚。 【實施方式】 £ 201214832 以下說明係用以協助讀者對所述之方 法、裝置、及/或系統 有較全_了解。目此，熟此技 可 範圍。此外，為 法、健、及/或系統的各種變化、修改在此_之方 了使说明更加明確及簡潔，將省略 z、朝 白知功能及結構的描述。 單體沉積裝置以及排放此裝置之 ^ 所附隨之圖式進行詳細的描述。 _ ,的範例將參考 圖3為顯示用以沉積單體之裝 —松 為顯示圖3,之單體沉積裝置中之的不^、圖，圖、4 圖；以及圖5為顯示圖4之單體冷啡在=^ 的示意圖。 各除冷部板後之一範例 參考圖3至圖5,單體沉積裂置選擇性地連接一直 —主腔室或一單體腔室，且包含主腔室 D 至 閉器(shutt邮g、單體恢復單元、第腔室120、開 ⑹、及第二闕162。 弟真空幫浦⑸、第一闕 复二:10為工間’用以设置有機發光二極體2形成於 其上的基板1以及用以沉積用來密封有機發光二極體2的一薄 ^在主腔f 110中’提供了支樓基板1的基板支撐器（圖未示） Μ及用以線性地來回健基板切器的線性 圖未 =基板1係置於基板支雜上，基板切㈣躲傳遞單元 ^生地傳遞，且在汽態的單體m係缝板丨發射。沉積於基板 ^單體m在後續的製程中由紫外線照射，且以紫外線照射的 早體m係轉變為薄膜中的有機層3,以密封有機發光二極體]。 7 201214832 裝以連接至主腔室no，且吸出 二^52係安 出主月工至10中的單體m或氣體。 體為一空間’其接收處於汽態之用於薄膜之-的外部。刪她 或-超音波喷嘴係安裝於單體槽121盘單體腔^ 毛細営 起處於錢之單_舞，使得轉化： =以引 體腔室120。 〜、们早體m供應至單 開閉器130開啟單體腔室]川你/^ 、 單體腔室120發射至主腔室11〇。“二处於⑽的早體爪從 器130關閉連接主腔室110與田#又程時，開閉 ^2，麟單體m不纽;的 =沉積製糊始時，即基板丨在主腔室ug中從單體如 向上移動，關n no 單體腔室 _ 從單體腔室120供應至主炉：官11Λ 、 使付早體m 而離開單體腔室120的上層區$ ^ 持績地傳遞 r嘴122,使—==】= 體 單體恢復單元恢復從單體腔室120被賊至外部的單 m. 8 201214832 m、由從外部提供之冷媒所冷卻、以及使用用以凝固及恢復處於 7汽態之單體m的單體冷阱14〇。 〜 單體冷阱140係安裝在單體腔室丨20中之單體m及氣體排 出所經的流動路徑’且包含外殼141、冷卻板143、及晶.格板 145。在此，從單體腔室120排出至外部的氣體包含由單體爪材 料所產生之不必要的氣體、從單體腔室丨2〇的牆所排出的氣體、 以及用以純化供應單體m所經之流動路徑的氬氣。 外殼141容、納冷卻板143，其將於後續製程中描述。冷媒可 流經的流動路徑係形成於外殼的牆142中，使得冷媒可從外部 提供進入牆142。因為外殼141本身的冷卻加速了單體m在單 體冷阱140中的凝固，而可提升整體的冷卻效率。 導引溝槽146係形成於外殼牆HI上。當冷卻板143插入 外殼141以柄合時，冷卻板143的側邊可插入至導引溝槽146， 而當冷卻板143與外殼141分開時，冷卻板143係沿導引構槽 146滑動以與外殼141分離。如所述，導引構槽146幫助冷卻板 143及外殼141彼此耦合及分離。 入口埠(圖未示)係形成於外殼141的一側，且從單體腔室 120排出的單體m及氣體係經由入口埠而被吸入至外殼141中。 冷卻板143係容納於外殼141中，且由從外部提供的冷媒 冷卻，使得單體m附著於其表面。冷媒可流動通過之流動路徑 係形成於冷卻板143，且流經流動路徑的冷媒係造成冷卻板 9 201214832 本身的冷卻。冷卻板143的低溫使传在汽悲的單體m凝固且微 粒化’因而附著於冷卻板143的表面。冷卻板143恢復軍體m， 使得單體可從中移除的氣體係排出至單體冷阱14〇的外部。 穿孔144形成於冷卻板並穿過冷卻板的頂表面及底 表面，且單體爪與氣體係經由穿孔144穿過冷卻板143而流動。 複數個冷卻板143形成於外殼H1中，且沿氣體及單體的 流動方向A而彼此間隔設置，使得單體m可經由許多階段而而 恢復。如圖4所述，單體m首先由設置於:最上部的冷卻板]43 恢復，且單體由設置於最底部的複數個冷卻板再次恢復， 由此可改善單體m從單體m及氣體之混合物的恢復速率。 形成於每一冷卻板143中之穿孔144的孔徑面積係朝在外 41中氣體及單體之流動方向A之向下方向而降低。設置於 最向部之冷卻板143之穿孔144的孔徑面積為最大，設置於最 低部之冷卻板143之穿孔144的孔徑_為最小，且置於盆中 的冷卻板143之穿孔144的孔徑面積係逐漸降低。 '、 如上述 才〜的札徑面積係從氣體及單體之流動方向 Α的上部往下減少，而使單體恢復速率增加。由於大量單體〇 係包含於在氣體及單體之流動方向A ±部之混合氣财，即使 ^孔144的大孔徑面積增加了流動速率，許多單體⑺仍可恢復。 然而，在氣體及單體之流動方向A的下部，單體m由設置於上 部的冷歧143 #除而含有少量的單體，因此降低穿孔⑷ 孔徑面積(增加了流4的降幅），且流體的速度係降低而增加單體 201214832 m的恢復速率。 晶格板145係安裝以與冷卻板143的頂表面及底表面接 觸，以增加單體m附著的表面面積。晶格板145係安裝以接觸 冷卻板143，以冷卻至與冷卻板143相同等級，使得單體撕凝 固於晶格板145的表面而微粒化並附著於其上。單體m附著處 的表面面積將藉由晶格板145而增加，進而增加單體恢復速率。 出口槔(圖未示)係形成於外殼141的另一側，使得單體历 從中移除的氣體係盤由出口埠排出至單體冷阱14〇的外部。因 此，可避免單體m阻塞出口埠及排氣通道。 如上述所構成之單體冷阱〗4〇的維護可以簡單的方式實 施。在冷卻板143及晶格板145從外殼141取出後，附著於冷 钾板143及晶格板145之表面的微粒單體將被移除，而完成單 體冷阱140的維護。因此，單體冷阱14〇可簡化單體恢復單元 的維護且可半永久性地使用。 第一真空幫浦151選擇性地連接至主腔室11〇或單體冷阱 14〇(單體恢復單元），並吸人單體腔室12()中之單體❿或氣體。 有關將於後續製程中進行描述之第一閥161與第二閥，♦第一 閥161開啟且第二閥162關閉時，第一真空幫浦ΐ5ι係^接至 主腔室110,且當第一閥161關閉且第二閥162開啟時，第一直 空幫浦Π1係連接至單體冷阱140。 第一閥161開啟或關閉在主腔室與第—真空幫浦m 201214832 間的-流動路徑，以及第二間162開啟或關 (單體冷解刚)與第—真空幫_間的-流動路=是早兀 使用單體沉積裝置1〇〇排放單體之方法 3至圖7而概要地描述於 _將茶考圖 圖6為顯示圖3之單體沉積褒置之 音 4置之乾例的不意圖，其t單體腔室係連接至第—真空幫浦： 單體沉積裝置的排放方法包含第—至第三排放操作。 由：===;的單體，係經 表示的流動路徑)，而單體m從單體腔室圖6令T所 且正執行一沉積製程。 至120奄射至主腔室110， 當第1⑹開啟時，主腔111〇 的-流動路經係開啟，而當第二間:⑸間 與第一真空幫浦⑸間的一流動路經係關Γ 冷啡140 在第-排放操作中，當停止至 正供應用以淨化連料體腔室。:二二：早體供應且 氣體時，在單體腔室120中的氣體;之淨化 ㈣第-真空幫浦151而排細第二闕 τ u所表不的流動路徑)。 201214832 當第一閥161關閉時，主腔室no與第〜扣* 之流動路徑係關閉，而當第二閥162開啟 真空幫浦151間 第-真空幫浦151間之流動路徑係開啟。”單體泠阱輿 從單聽腔室120排放的氣體包含單體 單體m、從單體腔室12〇表面所排出的^⑽巾所剩餘辦 產生之不必要的氣體、或用以純化供_纟早體m材料所 的氬氣。 〜早體切所經之流動路徑 由於第二排放-操作，單體腔室12〇 至外部，使得供應至單體腔室12G供後續零ff之氣體排出 品質可提高。 償衣耘之早體m的 隨著沉積製程持續的進行， 執行及停止，因此這樣的一個製 行第一排放操作及第二排放操作 來自外部的單體供應係重複地 程係根據單體供應而重複地執 在第三排雜料，在翅t丨 由第二幫浦⑸而排放至外部。第體係箱 作及第二排簡作—_ ㈣係料—排放揭 m或氣體。 门執灯以持、，地排放主腔室1K)中的單體 之-範圍，且考^ _真空狀態於約赃4至丽7托」 愈第-直主腔室U°的大空間，*於第二幫浦15 室no 係一同將單體m與氣體排放至外部，⑽ 至ili)中的壓力可持續地維持。 201214832 嗎的方法 以増強真201214832 VI. Description of invention: [Reciprocal reference of related application] This application claims the priority of Korean Patent Application Ann (4), which was filed on September 20, 2010, and its content is the reference of this article. TECHNICAL FIELD OF THE INVENTION The following is a description of a method for freshening the body and (4) discharging I, with respect to a single chamber for effectively discharging the remaining gas = accumulated in the main chamber and receiving the monomer therein Body = body deposition device, and method for discharging the device: the body. Bu. Early [Prior Art] The lower-display device has the characteristics of self-illumination; the excellent display ==, the reaction rate, and the power consumption _ mode is connected between the scan line and the data line to form a halogen. Adipose & electrode-containing electrode, and formed on the anode electrode and the cathode electrode (4) #, a cathode-electrical-transmission layer surface light-emitting layer and an electron-transport layer. Material ## Organic film and the voltage is applied to the anode electrode and the cathode electric thunder... The electric hole injected into the emperor α (four) electrode via the cathode electrode and the energy difference from the electron of the eight are caused to emit light. '° k privately produced, however, OLED contains ancient 丄,,, and the cathode electrode * metal is formed, 0 ' 'this' is affected by hydrogen or oxygen, so it is easily oxidized by water vapor in the air, making the 201214832 electrical And the emission characteristics are deteriorated. Therefore, in order to improve the above-mentioned shortcomings, the substrate is formed by a full-filled can or cup-shaped container or by a glass or y-shaped substrate = OLED is formed by a sealant (such as Epoxy resin): The technique of using a container or encapsulating a substrate is not easy to apply to a thin or OLED display device. Therefore, a thin or flexible 囊led encapsulation technique has been proposed for the sealing. Encapsulation technology - an example, used to alternately stack and inorganic layers on QLED 2, the method of quilting is squaring qled 曰 ^ The water vapor permeability of the device is about l〇E_6g/m2/day ( The requirement of wvtr) is widely used. Referring to Fig. 2, the monomer m which is vaporized is supplied from the tank 21 which receives the liquid monomer to the monomer chamber 2〇. #基板丨From the main chamber丨(4) When the body is on the body, the opening and closing f 3G is turned on, and W m is directed to the substrate 1 by L j . The monomer m is performed by UV light. It is converted into a hydrate' thus forming an organic layer 3. At this time, in order to uniformly (10)-dimensional characteristics (such as density, thickness, etc.), it is quite important to discharge the monomer cavity + and helium gas. Residual gas: the second gas = or the monomer m vapor and the source gas), that is: ^ The gas discharged from the surface of the body cavity 1 of the body cavity 1 'the body produced by the monomer tons of material, And purifying the flow path through which the monomer m is supplied. In general, in order to exclude the gas 'vacuum pump 20' to vent the gas to the outside. Early body cavity to μ. 201214832 This 2b, the main chamber 10 maintains a vacuum state therein, that is, a vacuum of about 1 〇 E·4 Torr to about 10E-7 Torr. A vacuum pump 42 for maintaining a vacuum state is mounted to be connected to the main chamber 10. However, it is installed in the flow path to discharge the remaining gas in the monomer chamber 2〜. In addition to discharging the remaining gas, the real work is also used to form a film, and the body m is discharged, resulting in a vacuum pump. 41 is contaminated by monomers in a short time. Severe contamination of the vacuum pump will cause the operation of the deposition apparatus to stop, and increase the number of times maintenance is performed, thereby reducing the productivity of the apparatus. Further, the vacuum pump 41 connected to the monomer chamber 20 is only used to bring the monomer chamber to 20 The remaining gas is discharged to the outside, but has not been used to maintain the vacuum state in the main chamber relatively higher than the monomer chamber 2〇. SUMMARY OF THE INVENTION Therefore, in order to improve the above disadvantages, a monomer deposition apparatus and a method of discharging the unit of the apparatus are provided to selectively connect the vacuum pump to the main chamber or to a single month. Enhance the use of the vacuum pump, and the installation can restore the monomer - single unit between the monomer chamber and the real "Pu" to reduce the maintenance of the Pu and reduce the cost of replacing the vacuum pump. Other features and aspects of the present invention will become apparent from the following detailed description, drawings and claims. [Embodiment] £201214832 The following description is intended to assist the reader in understanding the methods, devices, and/or systems described. For this reason, familiarity with this technique can be ranged. In addition, various changes and modifications to the law, health, and/or system are made here to make the description clearer and more concise, and the description of the function and structure of z, and the white is omitted. The monomer deposition apparatus and the apparatus for discharging the same are described in detail with the accompanying drawings. The example of _ will refer to FIG. 3 for showing the device for depositing a single cell as shown in FIG. 3, in the monomer deposition device, FIG. 3, FIG. 4, and FIG. A schematic diagram of monomeric chillin at =^. Referring to FIG. 3 to FIG. 5, each of the dehumidification plates is selectively connected to the main chamber or a single chamber, and includes the main chamber D to the closed device. , the monomer recovery unit, the first chamber 120, the open (6), and the second 阙 162. The vacuum pump (5), the first 阙 complex 2: 10 is the work room 'for setting the organic light-emitting diode 2 formed thereon The substrate 1 and a substrate holder (not shown) for depositing the support substrate 1 in the main cavity f 110 for depositing the organic light-emitting diode 2 and for linearly back and forth The linear diagram of the substrate cutter is not = the substrate 1 is placed on the substrate, the substrate is cut (4), the transfer unit is transferred, and the vapor is emitted from the monomer m-seam plate. In the subsequent process, ultraviolet rays are irradiated, and the precursor m-ray irradiated with ultraviolet rays is converted into the organic layer 3 in the film to seal the organic light-emitting diodes. 7 201214832 Attached to the main chamber no, and sucks out 2 The 52 series installs the monomer m or gas from the main month to 10%. The body is a space that receives the vapor in the film - External. Delete her or - Ultrasonic nozzle system installed in the monomer slot 121 disk single cavity ^ capillary 営 处于 处于 钱 钱 钱 , , , , , , , , , , , , , , , , , , , , 转化 转化 转化 转化 转化 转化 转化 转化 转化 转化 转化 转化 转化 = = The shutter 130 opens the single chamber], and the monomer chamber 120 is emitted to the main chamber 11〇. "The two early (10) early claws 130 are closed to connect the main chamber 110 to the field. When opening and closing ^2, the lining monomer m is not new; = deposition at the beginning of the paste, that is, the substrate 丨 moves from the monomer in the main chamber ug upward, off n no monomer chamber _ from the monomer chamber 120 is supplied to the main furnace: the official chamber 11Λ, leaving the early body m and leaving the upper layer of the monomer chamber 120 to transfer the r nozzle 122, so that the -==== body monomer recovery unit recovers from the monomer chamber The chamber 120 is spurred to the outside by a single m. 8 201214832 m, cooled by a refrigerant supplied from the outside, and used to cool and recover the monomer cold trap 14 of the monomer m in the 7 vapor state. The well 140 is a flow path 'passed by the monomer m and the gas discharged through the cell chamber 20 and includes a casing 141, a cooling plate 143, and a crystal plate 145. Here, the monomer The gas discharged to the outside of the chamber 120 contains unnecessary gas generated by the monomer claw material, gas discharged from the wall of the monomer chamber, and a flow path for purifying the supply monomer m. The outer casing 141 houses a cooling plate 143 which will be described in a subsequent process. The flow path through which the refrigerant can flow is formed in the wall 142 of the outer casing so that the refrigerant can be supplied to the wall 142 from the outside. The cooling accelerates the solidification of the monomer m in the cell cold trap 140, and improves the overall cooling efficiency. The guiding groove 146 is formed on the outer casing wall HI. When the cooling plate 143 is inserted into the outer casing 141 to be engaged, the side of the cooling plate 143 can be inserted into the guiding groove 146, and when the cooling plate 143 is separated from the outer casing 141, the cooling plate 143 is slid along the guiding groove 146. Separated from the outer casing 141. As described, the guide groove 146 helps the cooling plate 143 and the outer casing 141 to be coupled and separated from each other. An inlet port (not shown) is formed on one side of the outer casing 141, and the monomer m and the gas system discharged from the monomer chamber 120 are sucked into the outer casing 141 via the inlet port. The cooling plate 143 is housed in the outer casing 141 and is cooled by a refrigerant supplied from the outside so that the monomer m is attached to the surface thereof. The flow path through which the refrigerant can flow is formed on the cooling plate 143, and the refrigerant flowing through the flow path causes cooling of the cooling plate 9 201214832 itself. The low temperature of the cooling plate 143 causes the monomer m transmitted through the vapor to be solidified and micronized' and thus adheres to the surface of the cooling plate 143. The cooling plate 143 restores the military body m so that the gas system from which the monomer can be removed is discharged to the outside of the monomer cold trap 14A. Perforations 144 are formed in the cooling plate and through the top and bottom surfaces of the cooling plates, and the individual jaws and gas system flow through the cooling plates 143 via the perforations 144. A plurality of cooling plates 143 are formed in the outer casing H1 and spaced apart from each other in the flow direction A of the gas and the monomer, so that the monomer m can be recovered through a plurality of stages. As shown in FIG. 4, the monomer m is first recovered by the cooling plate 43 disposed at the uppermost portion, and the monomer is restored again by a plurality of cooling plates disposed at the bottom, thereby improving the monomer m from the monomer m. And the rate of recovery of the mixture of gases. The aperture area of the through hole 144 formed in each of the cooling plates 143 is lowered toward the downward direction of the flow direction A of the gas and the monomer in the outer portion 41. The aperture area of the through hole 144 of the cooling plate 143 disposed at the most portion is the largest, and the aperture _ of the through hole 144 of the cooling plate 143 disposed at the lowest portion is the smallest, and the aperture area of the through hole 144 of the cooling plate 143 placed in the basin is the smallest. The system gradually decreases. ' As in the above, the area of the pavement is reduced from the upper portion of the flow direction of the gas and the monomer, and the monomer recovery rate is increased. Since a large amount of monomer lanthanum is contained in the mixture of gas and monomer flow direction A ± portion, even if the large pore area of the pore 144 increases the flow rate, many monomers (7) can be recovered. However, in the lower portion of the flow direction A of the gas and the monomer, the monomer m is separated by the cold dislocation 143# disposed at the upper portion, and contains a small amount of monomer, thereby reducing the pore area of the perforation (4) (increasing the decrease of the flow 4), and The velocity of the fluid is reduced to increase the recovery rate of the monomer 201214832 m. The lattice plate 145 is mounted to contact the top and bottom surfaces of the cooling plate 143 to increase the surface area to which the monomer m is attached. The lattice plate 145 is mounted to contact the cooling plate 143 to be cooled to the same level as the cooling plate 143 so that the monomer is condensed on the surface of the lattice plate 145 to be micronized and adhered thereto. The surface area at which the monomer m is attached will increase by the lattice plate 145, thereby increasing the monomer recovery rate. An exit port (not shown) is formed on the other side of the outer casing 141 such that the gas system disk from which the monomer is removed is discharged from the outlet port to the outside of the cell cold trap 14A. Therefore, it is possible to prevent the monomer m from blocking the outlet port and the exhaust passage. The maintenance of the unit cold traps constructed as described above can be carried out in a simple manner. After the cooling plate 143 and the lattice plate 145 are taken out from the outer casing 141, the particulate monomers adhering to the surfaces of the cold potassium plate 143 and the lattice plate 145 are removed, and the maintenance of the single cold trap 140 is completed. Therefore, the cell cold trap 14 〇 simplifies the maintenance of the cell recovery unit and can be used semi-permanently. The first vacuum pump 151 is selectively connected to the main chamber 11 or the monomer cold trap 14 (monomer recovery unit) and sucks the monomer helium or gas in the monomer chamber 12 (). Regarding the first valve 161 and the second valve which will be described in the subsequent process, ♦ when the first valve 161 is opened and the second valve 162 is closed, the first vacuum pump is connected to the main chamber 110, and when When a valve 161 is closed and the second valve 162 is open, the first direct air pump 1 is coupled to the unitary cold trap 140. The first valve 161 opens or closes the flow path between the main chamber and the first vacuum pump m 201214832, and the second portion 162 opens or closes (single cold solution) and the first vacuum Road = is a method of using a monomer deposition device 1 〇〇 discharge monomer method 3 to Figure 7 and is generally described in _ tea test Figure 6 is shown in Figure 3 of the monomer deposition device sound 4 For example, the t-cell chamber is connected to the first vacuum pump: the discharge method of the monomer deposition device includes the first to third discharge operations. The monomer from: ===; is the indicated flow path), while the monomer m is from the monomer chamber Figure 6 and T is performing a deposition process. Up to 120 奄 to the main chamber 110, when the first (6) is opened, the flow path of the main chamber 111〇 is opened, and when the second chamber: (5) is connected to the first vacuum pump (5) About chilling 140 In the first-discharge operation, when it is stopped to supply, it is used to purify the connected body chamber. : 22: The gas supplied in the monomer chamber 120 when the precursor is supplied and gas; the purification (4) the first vacuum pump 151 and the flow path indicated by the second 阙 τ u). 201214832 When the first valve 161 is closed, the flow path of the main chamber no and the first buckle* is closed, and when the second valve 162 is opened, the flow path between the vacuum pump 151 and the vacuum pump 151 is opened. The gas discharged from the single-chasing chamber 120 contains monomer monomer m, unnecessary gas generated from the (10) towel discharged from the surface of the monomer chamber 12, or used for purification. The argon gas supplied to the material of the early body m. The flow path through which the early body is cut is due to the second discharge-operation, the monomer chamber 12 is externally supplied to the monomer chamber 12G for subsequent zero ff. The quality of the gas discharge can be improved. The premature body m of the pay-filling raft is continuously performed, executed and stopped as the deposition process is continued, so that such a first discharge operation and a second discharge operation are performed repeatedly from the external monomer supply system. The process is repeatedly carried out in the third row of miscellaneous materials according to the supply of the monomer, and is discharged to the outside by the second pump (5) in the wing t丨. The first system and the second row are simple--(4) m or gas. The door handles the range of the cells in the main chamber 1K), and the vacuum state is about 赃4 to 丽7 托. The first-straight main chamber U° The large space, * in the second pump 15 room no unit together to discharge the monomer m and gas to the outside, (10) to ili) Sustainably maintained. 201214832 The way to be barely true
如上述，在單體沉積裝置以及排放此裝置之單體 中’真空幫浦可選擇性地連接至主腔室或單體腔室，以 空幫浦的使用。 此外，如上述 方法中’能夠恢復^ 之間，因而改善真空幫浦的維護且降低取代真空幫浦所道項 費用。 ♦致的 j . 此外’在單體沉積裝置以及排放此裝置之單體的方法中， 使用單體恢復單元，其係使用冷媒使處於汽態的單體凝固以恢 復，如此而可改善單體恢復速率。 雖然單體冷阱的範例係描述及說明為矩形，且冷卻板為四 邊形’然而單體糾可形成為圓㈣且冷卻板可形成為圓柱板 形，且其可以各種形式實施。 根據單體沉積裝置以及排放此裝置之單體的方法，真空幫 =係選擇性地連接至主腔室或單體腔室，Μ強真空幫浦的使 用。 此外i根鮮體沉積裝置以及排放㈣置之單體的方法， 此夠恢復早體之-單元係安裝於單體腔室與真空幫浦之間，因 而改善真空幫浦轉護謂低取代真空幫浦所料的費用。 201214832 再者，根據單體沉積裝置以及排放此裝置之單體的方法， 使用單體恢復-單元，其係使用冷媒使處於汽態的單體凝固以恢.^ 復，如此而可改善單體恢復速率。 以上已描:述了數個實施例。然而，應了解可做出許多修改如 舉例來說，若所述技術以不同的順序執行、及/或在所述系統、 架構、裝Ϊ、或電財的組件不同方式組合及/或由其他組件 或其均等物所取代或增補，仍可達到適當的結果。因此，其他 實施係落入後附申請專利範圍的範疇中。 【圖式簡單說明】 圖1為一不意圖，顯示應用薄膜囊封技術之有機發光二極 體(OLED)顯不裝置之一範例； 圖2為顯示習知單體沉積袋置之一範例的示意圖； 圖3為顯示單體沉積裝置之一範例的示意圖； 圖4為顯示圖3之單體沉積裝置中之一單體冷胖之一範例 的透視圖； 圖5為顯示圖4之單體冷牌在移除冷卻板後之示意圖； 圖6為顯示圖3之單體沉積裂置之一示意圖，盆中主腔室 係連接至第一真空幫浦；以及 …圖7為顯示圖3之單體沉積裝置之—示意圖，其中單體腔 至係連接至第一真空幫浦。 =式及詳細=述中，除非另有描述，相同 f係代表相_耕、特徵、或結構。這些元件的相對尺寸及 、，曰不可能可能為了清楚、朗、及方便#时而放大。 201214832 【主要元件符號說明】 1 基板 2 有機發光二極體 3 有機層 4 無機層 π 10 主腔室 20 單體腔室 21 單體槽 30 開閉器 41 真空幫浦 42 真空幫浦 100 單體沉積裝置 110 主腔室 120 單體腔室 121 單體槽 122 喷嘴 130 開閉器 140 單體冷阱 141 外殼 142 牆 143 冷卻板 144 穿孔 145 晶格板 146 導引溝槽 151 第一真空幫浦 152 第二幫浦 16 201214832 161 第一閥 162 第二閥As described above, in the monomer deposition apparatus and the monomer discharging the apparatus, the vacuum pump can be selectively connected to the main chamber or the monomer chamber to use the empty pump. In addition, as in the above method, it is possible to recover between the two, thereby improving the maintenance of the vacuum pump and reducing the cost of replacing the vacuum pump. ♦ In addition, in the monomer deposition apparatus and the method of discharging the monomer of the apparatus, a monomer recovery unit is used, which uses a refrigerant to solidify the monomer in a vapor state to recover, thereby improving the monomer. Recovery rate. Although the example of the unitary cold trap is described and illustrated as being rectangular, and the cooling plate is quadrilateral 'however, the unitary correction can be formed into a circle (four) and the cooling plate can be formed into a cylindrical shape, and it can be implemented in various forms. Depending on the monomer deposition apparatus and the method of discharging the monomer of the apparatus, the vacuum is selectively connected to the main chamber or the monomer chamber to force the use of the vacuum pump. In addition, the i fresh-sedimentation device and the method of discharging the monomer (4) are sufficient to restore the early body-the unit is installed between the monomer chamber and the vacuum pump, thereby improving the vacuum pump transfer protection as a low-substitution vacuum. The cost of the pump. 201214832 Furthermore, according to the monomer deposition apparatus and the method of discharging the monomer of the apparatus, a monomer recovery unit is used, which uses a refrigerant to solidify the monomer in a vapor state to recover, thereby improving the monomer. Recovery rate. Several embodiments have been described above. However, it should be appreciated that many modifications can be made, for example, if the techniques are performed in a different order, and/or in a different combination of the components of the system, architecture, device, or power, and/or by other Substituting or supplementing components or their equivalents can still achieve appropriate results. Therefore, other implementations fall within the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic view showing an example of an organic light-emitting diode (OLED) display device using a thin film encapsulation technique; FIG. 2 is a view showing an example of a conventional single-body deposition package. 3 is a schematic view showing an example of a monomer deposition device; FIG. 4 is a perspective view showing an example of a single body of the monomer deposition device of FIG. 3; FIG. 5 is a view showing the single body of FIG. Figure 2 is a schematic view showing the monomer deposition crack of Figure 3, the main chamber of the basin is connected to the first vacuum pump; and Figure 7 is a diagram showing Figure 3 A schematic diagram of a monomer deposition apparatus in which a monomer chamber is connected to a first vacuum pump. = Formula and detail = in the description, unless otherwise stated, the same f represents the phase, the characteristics, or the structure. The relative dimensions of these components, and 曰, may not be magnified for clarity, latitude, and convenience. 201214832 [Description of main components] 1 Substrate 2 Organic light-emitting diode 3 Organic layer 4 Inorganic layer π 10 Main chamber 20 Monomer chamber 21 Monomer tank 30 Opener 41 Vacuum pump 42 Vacuum pump 100 Monomer deposition Device 110 Main chamber 120 Single chamber 121 Single tank 122 Nozzle 130 Opener 140 Single cold trap 141 Housing 142 Wall 143 Cooling plate 144 Perforation 145 Lattice plate 146 Guide groove 151 First vacuum pump 152 Two pumps 16 201214832 161 first valve 162 second valve