201005115 六、發明說明： 【發明所屬之技術領域】 本發明有關於-種如請求項1前言所述之用於基板鑛 ^ 膜的設備。 【先前技術】 在 US 4401052、DE10224908 Α1、EP 1357200 A1 等專 利中，已揭示以硫化鎘、硫化鋅鎘或以有機發光二極體 (Orgamc Light Emitting Diode，OLED)物質為鍍膜材料的 設備。在這些文獻中所揭示的材料是先以汽化器加以蒸 發，之後再鍍覆在基板上。 然而，以這種設備無法蒸發鹼金族或鹼土族金屬因 為這些金屬具有高反應性，並會與玻璃或水形成化合 物。在鹼金族和鹼土族金屬中，特別讓人感興趣的是鋰 金屬，因其可用來製造緩慢放電的電池和充電電池。 癱 現代化的鋰電池係於1991年被首次引入市場。在此電 池中’ Li離子在石墨陽極（LixC6)和層狀氧化物 (Lu-jMC)2)陰極之間進行交換，TM為過锻金屬，即鈷、 鎳、或偶爾可為錳。在平均電壓為3 8 V時，能量密度 接近於180 Whkg 1，此約為早期錯酸電池的5倍。 鋰電池領域最近的發展涉及使用奈米材料。此外，也 有人從事包含氧陰極和鋰陽極的鋰氧電池的研究。 Armand and J. -M Tarascon: Building Better Batteries,201005115 VI. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to an apparatus for a substrate mineral film as described in the preamble of claim 1. [Prior Art] In the patents of US Pat. No. 4,401052, DE 102 24 908 Α 1, EP 1357200 A1, etc., a device using cadmium sulfide, cadmium zinc sulfide or an organic light emitting diode (OLED) as a coating material has been disclosed. The materials disclosed in these documents are first vaporized by a vaporizer and then plated on a substrate. However, such equipment is incapable of evaporating alkali metal or alkaline earth metals because these metals are highly reactive and form compounds with glass or water. Among the alkali metal and alkaline earth metals, lithium metal is of particular interest because it can be used to make slow discharge batteries and rechargeable batteries.现代化 The modern lithium battery was first introduced to the market in 1991. In this cell, 'Li ions are exchanged between the graphite anode (LixC6) and the layered oxide (Lu-jMC) 2) cathode, which is an overwrought metal, namely cobalt, nickel, or occasionally manganese. At an average voltage of 3 8 V, the energy density is close to 180 Whkg 1, which is about 5 times that of an early acid-acid battery. Recent developments in the field of lithium batteries have involved the use of nanomaterials. In addition, research has been conducted on lithium-oxygen batteries including oxygen cathodes and lithium anodes. Armand and J. -M Tarascon: Building Better Batteries,
Nature, Vol.451，7, Febr. 2008, pp.652-657) 〇 3 201005115 鋰電池也被製造成薄膜電池（wo 02/099910 A1，pl， lines 17-20)。薄膜電池是以濺鍍方式應用。在濺鍍時， 離子（例如，正磷酸鋰）被沉積在基板上。也可經由反應 性滅鍵來賤鍵形成LixPx〇Nz的電解質層。 以電漿輔‘助化學氣相沉積（plasma_Enhanced chemieal Vapor· Deposition，PECVD)的方式，將Si〇2和鋰薄膜鍍在 基板上的方法也為已知（US 6177142 Bl)。 使用電子束汽化器，將Li-Co-〇鍈鍍在基板上的方法 也為已知（JP 2003-234100)。 其匕已知在基板上製造鋰或鋰合金薄膜的設備為在真 空中，將在坩堝中的鋰進行汽化（jp 2〇〇2 2〇616〇)。 最後，薄膜形成設備（具有一可形成真空或降壓狀態的 薄膜形成腔室）中所使用之薄膜形成源為已知，且薄膜形 成材料經由昇華或汽化，而在基板丄形成薄膜（Ep 1584 705 A)。這種薄膜形成源更包含：位於薄膜形成腔室中 的排放口（朝向基板的薄膜形成表面）、位於薄膜形成腔 室外部的材料供應部份，且包含裝有形成薄膜材料的材 料谷器。薄膜形成源中也具有將排放口與材料供應部份 連結起來的排放通道，彼此之間具有緊密的氣體連接關 係。 【發明内容】 本發明所提供之基板鍍膜設備，致力於解決當鍍膜材 料為具有化學反應性的鹼金屬和鹼土金屬時所產生之問 201005115 題。 、個問題可依據包含申請專利範圍第1項所述之特徵 - 的設備加以解決。 ‘ 本發明可達成的特殊優點包含，可對汽化坩堝進行再 補充或更換’且不會產生危險。這對於欲）汽化高反應性 材料（例如，鋰）而言，特別重要，因這些材料不可被接 觸也不可暴露於一般的大氣、氧氣和水之中。 • 因而，本發明有關於一種經由蒸氣分配器而在基板上 進行鍍骐的設備。蒸氣分配器經由饋入系統與汽化坩堝 連結。在坩堝和饋入系統之間至少設有一閥門。位於腔 室中的汽化坩堝可利用氣體源和真空幫浦，經由真空閥 門進行抽空或充氣。 【實施方式】 第1圖為可用於一真空腔室的蒸氣饋入系統i。在圖 # 中，可明顯看出真空腔室的腔壁2。這種真空腔室的詳 細内容揭示在專利號DE 10224908 A1的第13圖中。 蒸氣饋入系統1包含垂直方向的汽化管3，其對面設 有欲進仃鍍膜之基板4。汽化管3具有數個線性垂直安 置的汽化器喷嘴，並與入口管5相連接，入口管5與汽 化s 3彼此成直角方式設置。汽化管3因此可做為蒸氣 分配器。位於坩堝容座8中的圓筒形汽化坩堝7，與汽 化管3平行且與入口管5垂直，若欲汽化的反應材料為 鋰，則所使用的坩堝7為不鏽鋼、鈦、或鉬。在汽化坩 5 201005115 ^之下為具有活塞Η)的汽虹9。在第ι囷中的汽化掛 禍7位於較低的位置，…可經由活塞⑺升高或降 低。活塞10的側面為真空間門11,_室12可經由真 空間門U進行抽空和充氣’在-實例中，係以保護性氣 體進行充氣。 然而’因為並非僅有堆瑪7會與反應材料接觸，所以 整個蒸氣饋入系統必須包含不會與此材料進行反應的相 對惰性材料。 在坩堝腔室12中具有一線性導引器31，用以穩定坩 場腔室12。在線性導引器31中，設有一與汽化掛塌7 相連接的導引元件32。藉由延著線性導弓丨器31移動導 m，汽化掛蜗7也隨之延著線性導引器31進行 移動（即’箭頭33和34的方向）。 % 經由分離闕門13的協助（在第1圖為緊閉的狀態）’掛 禍腔室12和掛瑪7可脫離入口管5。分離間Η η位於 圈25之上入口官5包含方向向下的連接配件14。 在第1 ®中也可看到加熱用料15。連接配件14可由 活塞17的一端16進行封閉。這個連接配件14更包含一 個半球狀部份19(a calotte-shaped part 19)，可以銜接汽 化掛禍7的上冑18。活塞17是連接到H，並透過 此汽缸甞移動此活塞17。透過汽缸35可為空氣作動 汽虹。 在坩堝腔室12之中，可發現被裝在活塞10上面的支 撐裝置36。一彎曲狀的熱耦44從真空密封功率 201005115 5〇(power feedthrough)開 、 續從纏繞於支擇配件3 6， 並終止於㈣7底部的刻痕5卜經由熱_44，可測量片 化掛禍7的底部溫度。熱輕44的螺旋狀彎曲，—端固= 於功率導引50上，另—端固定於支律配件％上以容 ::瑪7從一較低位置被抬升到-較高位置。如第2圖 螓 騫 =示。…與…可藉由活塞1〇，分別朝向箭 碩33和34的方向移動。 圖中也可見手套箱4〇的側壁6，手套箱利封 化掛祸7和汽化器腔室⑴藉由手套箱4〇，可在 填：性氣體存在下，進行汽化_ 7的更換或是材料的 之年峑在一實例中，保護性氣體可為氬氣。第1圖所示 乎套箱40僅為部份簡圏。 第二：更繪示了麼力f"8 ’適以測量汽化坩堝7的堡 制器到設定值時’即可經由一控 圖中未繪不）來開啟或關閉分離閥門13。 2第1圖中也可發現冷卻口 37(僅示出—部份卜這種 :可：Γ::應單元連接(在第1圖中未緣示)，冷卻方 這種：卻：t。如果需要，可以這種方式來冷卻外殼… 第夏圖中给 經由—元件（例如’一條橡皮管（未於 冷式，供^示)）而連接至供應單元。如果冷卻方法為水 、’’早元可為一般的水路連接。 第 2 in _ ㈣7由:示為與第1圖相同的裝置，然而其中的汽化 了頁端的部/ 1〇升起’特別的一點在於，汽化掛瑪7最 习18,可插入在連接配件14的最底端的部份 7 201005115 内因連接配件14最底端部份被設計成半球狀，汽 化掛瑪7最頂端的部份18於此會成為球狀。分離間門 1 3此時為開啟。 ㈣加熱系統20圍繞在汽化掛禍7的周圍。此㈣加 熱系統 20 是遠接$,丨_ , , i 例積分微分（pr0p0rti0nai IDerivative，PID)控制器21，pm控制器η與逮 度擷取器22連接。速度擷取器22具有一測量裝置23, 例如振篕晶片或是發射光譜儀。這種測量裝置Μ可操取 從汽化管3至基板4的材料蒸發速率。為了此目的在 汽化管3中裝置了一個特別的喷嘴24,可產生與基板4 之鑛膜速率成比例的速率訊號。基 干礼现泰乳氣流經由喷嘴24到 達測量元件23。經由這種方式’掛禍加熱系統20可成 為一鍵膜速率的方程式。在piD控制器21上也可設置一 標準值。PID控制器也可以使用其它的控制器取代。 PID控制器為一般基本型態的控制器，包含pD(比例微分） 控制器和1(積分）控制器的平行電路，其同時具有早期干 擾物質的偵測、快速校正和去除標準偏差等特性：但如 果控制的製程包含了失效時間（dead time)，就不可以使 用PID控制器（因為其具有D(微分）元件）。 々由汽化管3經由垂直線性裝置上的孔洞所發出來的蒸 氣’象徵性地以箭頭26表示。這些孔洞的設計方式為可 達成高蒸氣速度和均勻的鍍膜。在一實例中，孔洞的直 徑為1 mm至4 mm，且間距為5 mm至3〇 mm。為了補 償在基板4邊緣區域膜厚的減少，在此處所裝置的孔洞 8 201005115 或喷嘴口’彼此之間可以更靠近，例如，間距只有其它 孔洞-半的距離。除了圓錐型的孔洞 用 長的孔洞或其它型式的開… 也了使用延 第3圖表示了與第】圖相同的裝置，然而具有兩個分 離閥門13和27’兩者皆為緊閉。兩個分離閥門。和27 可在保護性氣體存在之下更易於更換汽化_ 7。上方 分離閥門13可將鍍膜腔室28與大氣壓力29分離，而下 方分離閥門27可將_室8(則呆護性氣體填充）與大氣 壓力29分離。分離閥門27位於墊圈25之上。 分離閥Η 27的外殼必須被設計成真空密封然而闕門 的閘門只需要防止漏氣。因為當以大氣將坩堝7充氣之 後’與周圍空氣之間就沒有壓差，因此閥門27的閘門不 需要吸收任何因真空所產生的力量。 圖中所表示之》飞化坩堝7位於較低位置。坩堝腔 室12經由真空閥門11進行抽真空或充氣，在一實例中， 、保護H氣體進行充氣。真空閥門η與氣體源和真空幫 浦的連接關係未於圖巾繪示。在—實财，氣體源和真 工幫浦可選擇性地與了形管及合適安裝的閥門連接以 軟性波浪狀管路導引至閥門u。 一為了坩堝腔室12中移除汽化坩堝了，腔室進行了充 氣°在手套箱4G中’可對汽化㈣7進行裝填或更換。 手套箱4G此時處於具有保護性氣體（例如，氬氣）的情況 下。 在第4圖的繪示中’汽化坩堝7經由軌遒30被帶到遠 201005115 離汽化腔室的位置。其進 汽化腔室12。在it個位U且 的方向移動 在坆個位置較易於 或裝填。上方分離閥門13此時為：：甜：7的更換 〜呀馮緊閉，所以汽仆狀— 持在真空狀態下。此時的真空未被破壞。 至維 可瞭解的是，㈣7的更換或裝填僅能於間門 啟的狀態下進行。汽化㈣7必需以手套箱40封圍二 並在其中填入保護性氣體。Nature, Vol. 451, 7, Febr. 2008, pp. 652-657) 〇 3 201005115 Lithium batteries are also manufactured as thin film batteries (wo 02/099910 A1, pl, lines 17-20). Thin film batteries are applied by sputtering. At the time of sputtering, ions (for example, lithium orthophosphate) are deposited on the substrate. It is also possible to form an electrolyte layer of LixPx〇Nz via a reactive bond. A method of plating Si〇2 and a lithium thin film on a substrate by means of plasma-assisted chemical vapor deposition (PECVD) is also known (US Pat. No. 6,177,142 Bl). A method of plating Li-Co-〇鍈 on a substrate using an electron beam vaporizer is also known (JP 2003-234100). The device which is known to produce a lithium or lithium alloy film on a substrate is to vaporize lithium in the crucible (jp 2〇〇2 2〇616〇) in the sky. Finally, a film forming source used in a film forming apparatus (having a film forming chamber capable of forming a vacuum or a reduced pressure state) is known, and a film forming material is formed into a film by sublimation or vaporization (Ep 1584). 705 A). The film forming source further includes a discharge port (a film forming surface facing the substrate) located in the film forming chamber, a material supply portion located outside the film forming chamber, and a material containing the material forming the film material. The film forming source also has a discharge passage connecting the discharge port and the material supply portion, and has a close gas connection relationship with each other. SUMMARY OF THE INVENTION The substrate coating apparatus provided by the present invention is directed to solving the problem of 201005115 when the coating material is a chemically reactive alkali metal and alkaline earth metal. The problem can be solved by the device containing the features described in item 1 of the patent application scope. ‘Specific advantages that can be achieved with the present invention include that the vaporization crucible can be replenished or replaced' without risk. This is especially important for vaporizing highly reactive materials (e.g., lithium) because these materials are not accessible or exposed to the general atmosphere, oxygen, and water. • Accordingly, the present invention is directed to an apparatus for performing rhodium plating on a substrate via a vapor distributor. The vapor distributor is coupled to the vaporization enthalpy via a feed system. At least one valve is provided between the weir and the feed system. The vaporization crucible located in the chamber can be evacuated or inflated via a vacuum valve using a gas source and a vacuum pump. [Embodiment] Fig. 1 is a vapor feeding system i usable for a vacuum chamber. In Figure #, the cavity wall 2 of the vacuum chamber is evident. A detailed description of such a vacuum chamber is disclosed in Figure 13 of the patent number DE 10224908 A1. The vapor feed system 1 includes a vaporization tube 3 in a vertical direction, and a substrate 4 to which a plating film is to be applied is provided on the opposite side. The vaporization tube 3 has a plurality of linearly vertically disposed vaporizer nozzles connected to the inlet tube 5, and the inlet tubes 5 and the vaporization s 3 are disposed at right angles to each other. The vaporization tube 3 can thus be used as a vapor distributor. The cylindrical vaporization crucible 7 located in the receptacle 8 is parallel to the vaporization tube 3 and perpendicular to the inlet tube 5. If the reaction material to be vaporized is lithium, the crucible 7 used is stainless steel, titanium, or molybdenum. Under the vaporization 坩 5 201005115 ^ is a steam rainbow 9 with a piston Η). The vaporization hazard 7 in the ι囷 is located at a lower position, ... can be raised or lowered via the piston (7). The side of the piston 10 is the vacuum door 11, and the chamber 12 can be evacuated and inflated via the real space door U. In the example, it is inflated with a protective gas. However, because not only the stack 7 will be in contact with the reactive material, the entire vapor feed system must contain relatively inert materials that will not react with the material. A linear guide 31 is provided in the helium chamber 12 for stabilizing the field chamber 12. In the linear guide 31, a guiding member 32 connected to the vaporization collapse 7 is provided. By moving the guide m through the linear guide archer 31, the vaporization worm 7 is also moved by the linear guide 31 (i.e., the directions of the arrows 33 and 34). % is assisted by the separation trick 13 (in the state shown in Fig. 1 as a closed state), and the accident chamber 12 and the hangar 7 can be detached from the inlet tube 5. The separation interval η is located above the circle 25 and the inlet official 5 includes a downwardly connected connection fitting 14. The heating material 15 can also be seen in the first ® . The attachment fitting 14 can be closed by one end 16 of the piston 17. The connecting fitting 14 further includes a calotte-shaped part 19 (a calotte-shaped part 19) which can be coupled to the upper jaw 18 of the vaporizing accident 7. The piston 17 is connected to H and moves the piston 17 through the cylinder bore. The air is ventilated through the cylinder 35. In the helium chamber 12, a support means 36 mounted on the piston 10 can be found. A curved thermocouple 44 is opened from the vacuum seal power 201005115 5 power (power feedthrough), and is slid from the sizing 5 of the optional fitting 3 6 and terminated at the bottom of the (4) 7 via the heat _44, which can measure the sliced hang The bottom temperature of the disaster 7. The spiral of the hot light 44 is curved, the end is fixed on the power guide 50, and the other end is fixed on the branch fitting % to allow the tank 7 to be lifted from a lower position to a higher position. As shown in Figure 2 螓 骞 = show. ... and ... can be moved in the direction of the arrows 33 and 34 by the piston 1 分别, respectively. The side wall 6 of the glove box 4〇 can also be seen in the figure. The glove box is sealed and the vaporizer chamber (1) can be replaced by a glove box 4 in the presence of a gas. In an example, the protective gas may be argon. Figure 1 shows that the box 40 is only partially simplistic. Secondly, it is shown that the force force f"8' is suitable for measuring the vaporization of the vaporization crucible 7 to the set value, and then the separation valve 13 can be opened or closed by a not shown in a control chart. 2 Fig. 1 can also find the cooling port 37 (only shown - part of this: can be: Γ:: should be unit connected (not shown in Figure 1), cooling side of this: but: t. If necessary, the casing can be cooled in this way... In the summer diagram, the connection is made to the supply unit via a component (eg 'a rubber hose (not cooled)). If the cooling method is water, '' The early element can be a general waterway connection. The 2nd _ (4) 7 is: shown as the same device as the first picture, but the part of the vaporized end of the page / 1 〇 rises' special point is that the vaporization hangs the most Xi 18 can be inserted into the bottommost portion 7 of the connecting fitting 14 201005115. Since the bottommost portion of the connecting fitting 14 is designed to be hemispherical, the topmost portion 18 of the vaporizing hangar 7 will be spherical. The door 1 3 is now open. (4) The heating system 20 surrounds the vaporization hazard 7. This (4) heating system 20 is a remote $, 丨_, , i example integral differential (pr0p0r0rti0nai IDerivative, PID) controller 21, The pm controller η is connected to the catcher 22. The speed picker 22 has a measuring device 23, for example A germanium wafer or an emission spectrometer. This measuring device can handle the evaporation rate of material from the vaporization tube 3 to the substrate 4. For this purpose, a special nozzle 24 is provided in the vaporization tube 3 to produce a deposit with the substrate 4. The film rate is proportional to the rate signal. The base tea flow reaches the measuring element 23 via the nozzle 24. In this way, the heating system 20 can be an equation of the bond film rate. It can also be set on the piD controller 21. A standard value. The PID controller can also be replaced by another controller. The PID controller is a general basic type controller, including a parallel circuit of a pD (proportional derivative) controller and a 1 (integral) controller, which has both Early detection of interfering substances, rapid correction, and removal of standard deviations: However, if the control process includes a dead time, the PID controller cannot be used (because it has D (differential) components). The vapors from the vaporization tubes 3 through the holes in the vertical linear device are symbolically represented by arrows 26. These holes are designed in such a way as to achieve high vapor rates. Uniform coating. In one example, the holes have a diameter of 1 mm to 4 mm and a pitch of 5 mm to 3 mm. To compensate for the reduction in film thickness at the edge of the substrate 4, the hole 8 201005115 or The nozzle ports can be closer to each other, for example, the distance is only the other holes - half the distance. In addition to the conical holes with long holes or other types of opening ... also use the extension 3 to show the same as the first picture The device, however, has two separate valves 13 and 27' that are both tightly closed. Two separate valves. and 27 can be more easily replaced in the presence of a protective gas. The upper separation valve 13 separates the coating chamber 28 from the atmospheric pressure 29, while the lower separation valve 27 separates the chamber 8 (which is filled with the atmosphere) from the atmospheric pressure 29. The separation valve 27 is located above the gasket 25. The outer casing of the separation valve Η 27 must be designed to be vacuum sealed, but the gate of the door only needs to prevent air leakage. Since there is no pressure difference between the air and the surrounding air after the atmosphere is inflated, the gate of the valve 27 does not need to absorb any force generated by the vacuum. The "flying raft 7" shown in the figure is located at a lower position. The helium chamber 12 is evacuated or inflated via a vacuum valve 11, and in one example, the H gas is protected for inflation. The connection relationship between the vacuum valve η and the gas source and the vacuum pump is not shown in the figure. In the real money, the gas source and the pump can be selectively connected to the tube and the properly installed valve to guide the valve u to the soft wavy line. In order to remove the vaporization enthalpy in the helium chamber 12, the chamber is inflated. In the glove box 4G, the vaporization (four) 7 can be filled or replaced. The glove box 4G is now in the presence of a protective gas (e.g., argon). In the depiction of Fig. 4, the vaporization crucible 7 is brought to the position of the vaporization chamber by the boring 30 to the far 201005115. It enters the vaporization chamber 12. Moving in the direction of it's U and it is easier or loading in one location. The upper separation valve 13 is now:: Sweet: 7 replacement ~ Ya Feng is tightly closed, so the steam servant - held under vacuum. The vacuum at this time was not destroyed. It can be understood that the replacement or filling of (4) 7 can only be carried out in the state of the door opening. The vaporization (4) 7 must be enclosed by a glove box 40 and filled with a protective gas.
如在第4圖中所示，汽化㈣7位於較低位置。掛禍 腔室12可獨立地經由真空閥門u進行抽空或充氣，不 會對真空歸造成影響。汽化_7與㈣腔室12被放 入手套箱40中。汽化坩堝7在此被移除並以新的汽化坩 禍更換’或疋進行汽化掛禍7的填充。 在以汽化材料填充掛禍7之後，分離閥門以進行密閉 且進行坩堝腔室12抽空。，之後，坩堝腔室12和汽化坩 堝7延著軌道30,朝著箭頭42的方向，移動回到後方 的位置。在分離閥門13和27之間的連接完成真空密閉， 並且坩堝腔室12進行柚空之後，分離閥門13和27即可 開啟。之後，汽化坩堝7以箭頭33的方向移動到上方位 置。 依據其它的具體實施例（未繪示），手套箱4〇可與鍍膜 裝置分離。在這種例子中，於保護性氣體存在的情況下， 坩堝7與墊圈25和一合適鎖定裝置（未繪示），被從坩堝 腔室12中移動至如第4圖所示之拉出的位置（即，從軌 道30昇起）’此時閥門27為緊閉。鎖定機制將坩堝7固 201005115 定在墊圈25或墊圈25的凸緣上。坩堝7以這種方式在 密閉狀態下，移動至旁邊的手套箱4〇。於是，坩堝7可 在閥門27密閉狀態下進行選擇性的清理或再填充。As shown in Figure 4, vaporization (4) 7 is in the lower position. The chamber 12 can be independently evacuated or inflated via the vacuum valve u without affecting the vacuum. The vaporization _7 and (iv) chambers 12 are placed in the glove box 40. The vaporization crucible 7 is here removed and replaced with a new vaporization fault or a vaporization trap. After filling the hazard 7 with the vaporized material, the valve is separated for sealing and the helium chamber 12 is evacuated. Thereafter, the crucible chamber 12 and the vaporization crucible 7 are moved to the rear position by the rail 30 in the direction of the arrow 42. After the connection between the separation valves 13 and 27 is vacuum sealed, and the chamber 12 is subjected to the pomelo, the separation valves 13 and 27 can be opened. Thereafter, the vaporization crucible 7 is moved to the upper orientation in the direction of the arrow 33. According to other embodiments (not shown), the glove box 4 can be separated from the coating device. In this example, in the presence of a protective gas, the crucible 7 and the washer 25 and a suitable locking device (not shown) are moved from the crucible chamber 12 to the pull-out as shown in FIG. The position (ie, rising from the track 30) 'at this time the valve 27 is closed. The locking mechanism places the 0517solid 201005115 on the flange of the washer 25 or washer 25. In this manner, the crucible 7 is moved to the side glove box 4 in a closed state. Thus, the crucible 7 can be selectively cleaned or refilled while the valve 27 is sealed.
前述製程適用於玻璃基板的鍍膜。然而也可利用其在 200 mm或300 mm直徑的矽晶圓之上進行鍍臈，其中基 板的牦架可裝上一或數片基板。第4圖中未繪示基板的 托架。對於所有擺放在托架上的基板，進行均勻鍍臈之 基板必要高度h，可經由汽化管3的長度進行調整。 此外，合成材料或軟性的金屬基板也可使用這個設 備，例如EP 1589130 A1專利中之第3圖所示的例子。 在這個已知的設備中，只有蒸氣分配器管路和蒸氣出口 喷嘴’且其需要水平設置並與薄板平行。 需要瞭解的是，除了擺放一個坩堝之外，也可擺放輿 個掛堝，並可以EP 1357200 A1所描述的方式進行連接 在此技術中具有通常知識者可瞭解，本發明可進行各 種變化、替換、使用與設置’以達成與這裡所述之具葡 實施方式實質相同的結果。所以，本發明並不限於所捐 供之具體實施例。本發明應包含申請專利範圍中之具有 相同範圍和精神之各種變化、改造、和直它裝 ’、 【圖式簡單說明】 ^ ° 且可進一步 本發明之具體實施方式以特徵方式描敘 以圖示方式詳細描述。在圖中所表示為. 第1圖為分離閥門緊閉時之蒸氣饋入系統 201005115 第2圖為依據第1圖所繪示之，具有PID控制器之蒸 氣饋入系統，此分離閥門為開啟； 第3圖為具有兩個分離閥門的蒸氣饋入系統； 第4圖為依據第3圖所繪示之蒸氣饋入系統，分離閥 門緊閉且汽化坩堝為側向移動。 【主要元件符號說明】The foregoing process is suitable for coating a glass substrate. However, it can also be plated on a 200 mm or 300 mm diameter germanium wafer, where the substrate truss can be mounted with one or several substrates. The bracket of the substrate is not shown in Fig. 4. For all substrates placed on the carrier, the necessary height h of the substrate to be uniformly plated can be adjusted via the length of the vaporization tube 3. In addition, this device can also be used for synthetic materials or flexible metal substrates, such as the example shown in Figure 3 of the EP 1589130 A1 patent. In this known device, there are only the vapor distributor line and the vapor outlet nozzle ' and it needs to be horizontally arranged and parallel to the sheet. It should be understood that in addition to placing a cymbal, it is also possible to place a shackle and to connect in the manner described in EP 1357200 A1. It is understood by those of ordinary skill in the art that the invention can be varied. , Replacement, Use, and Setup' to achieve substantially the same results as the Portuguese implementation described herein. Therefore, the invention is not limited to the specific embodiments that are donated. The present invention should include various changes, modifications, and straightnesses of the same scope and spirit in the scope of the claims, and a simple description of the drawings, and further embodiments of the present invention may be described in a characteristic manner. A detailed description of the manner. It is shown in the figure. Fig. 1 is the steam feeding system 201005115 when the separation valve is closed. Fig. 2 is the steam feeding system with PID controller according to Fig. 1, the separation valve is open. Figure 3 is a vapor feed system with two separate valves; Figure 4 is a vapor feed system according to Figure 3, the separation valve is closed and the vaporization enthalpy is laterally moved. [Main component symbol description]
1 蒸氣館入系統 24 喷嘴 2 腔壁 25 墊圈 3 汽化管 26 箭頭 4 基板 27 分離閥門 5 入口管 28 鍍膜腔室 6 側壁 29 大氣壓力 7 汽化坩堝 30 軌道 8 坩堝室 31 線性導引 9 汽缸 32 導引元件 10 活塞 33 箭頭 11 真空閥門 34 箭頭 12 坩堝腔室 35 汽缸 13 分離閥門 36 支撐裝置 14 連接配件 37 冷卻口 15 外罩 38 氣壓計 16 端 39 箭頭 12 201005115 17 活塞 40 手套箱 18 部份 41 外殼 19 部份 42 箭頭 20 财禍加熱系統 44 熱耦 21 PID控制器 50 功率導引 22 速率擷取器 51 刻痕 23 測量裝置 ❹ φ 131 Vapor inlet system 24 Nozzles 2 Cavity wall 25 Washer 3 Vaporization tube 26 Arrow 4 Substrate 27 Separation valve 5 Inlet tube 28 Coating chamber 6 Side wall 29 Atmospheric pressure 7 Vaporization 30 Orbit 8 Chamber 31 Linear guidance 9 Cylinder 32 Guide Pilot element 10 Piston 33 Arrow 11 Vacuum valve 34 Arrow 12 坩埚 Chamber 35 Cylinder 13 Separation valve 36 Support device 14 Connection fitting 37 Cooling port 15 Housing 38 Barometer 16 End 39 Arrow 12 201005115 17 Piston 40 Glove box 18 Part 41 Housing 19 Part 42 Arrow 20 Treasury heating system 44 Thermocouple 21 PID controller 50 Power steering 22 Rate picker 51 Scoring 23 Measuring device φ φ 13