201213605 六、發明說明： 【發明所屬之技術領域】 本發明係有關於包括-喷嘴頭之—種裝置，使基底之 表面受至少—第一前驅物及一第二前驅物之連續表面反 應，特別是根據申請專利範圍第丨項之前言之一種裝置。 本發明亦有關於用於處理一基底之一表面之一種配置，使 基底之表面受至少一第一前驅物及_第二前驅物之連續表 面反應，特別是根據申請專利範圍第13項之前言之—種配 置。再者，本發明係有關於根據申請專利範圍第25項之前 言之一種方法，用於處理一基底之一表面。 【先前技術】 於習知技術之數種裝置類型中，根據原子層沈積 (atomic layer deposition meth〇d，AL]))之原理是利用這 些裝置及喷嘴頭使一基底之一表面受至少一第一前驅物及 -第二前驅物之連續表面反應而對基底之表面進行處理。 在ALD應用中，-般是經由分開階段將兩氣體前驅物引入 ALD反應ϋ中。4 ϋ前驅物有纟地與基底《表面進行反應 下形成一單一原子層之沈積。一般而t，前驅物階段是緊 接於一清除階段之後或與清除階段分開的方式進行，在引 入其它不同前驅物之前是需藉由前驅物階段去除基底表面 上之過量前驅物°因此’ —ALD製程需要依序交替方式將 複數前驅物流動至基底表面。此重覆的交替表面反應順序 及介於其間之清除階段即為一般ALD沈積循環。 201213605 S去技術中之ald裝置通常包括一噴嘴頭，此喷嘴頭 具有使基底之表面受第一前驅物之作用之一或多個第一前 驅物喷嘴、具有使基底之表面受第二前驅物之作用之一或 多個第二前驅物喷嘴，以及具有使基底之表面受一清除氣 體之作用之一或多個清除氣體區域或具有使基底之表面受 一清除氣體之作置於第一冑驅物冑嘴及帛三前驅物 喷嘴之間之一或多個清除氣體區域。於喷嘴頭中之複數噴 嘴是以交錯連續方式設置：第—前驅物噴嘴、清除氣體區 域、第二前驅物喷嘴、清除氣體區域、第一前驅物喷嘴、 /月除氣體區域、第一剛驅物喷嘴等β因此，當噴嘴頭於基 底之表面上移動時，依照ALD方法可於基底之表面上製作 生長層。噴嘴頭亦可包括排放通道，這些排放通道可設置 於第一前驅物喷嘴及第二前驅物喷嘴之間或於一第一前驅 物噴嘴及一清除氣體區域之間或於一第二前驅物喷嘴及一 仴除氣體區域之間。在基底之表面受前驅物作用之後，利 用排放通道對於前驅物及清除氣體進行排放。可替代地， 於各習知技術中之前驅物喷嘴及清除氣體區域包括用於供 應剛驅物或清除氣體之至少一 Α 口琿及用於排放前驅物或 清除氣體之至少一出口彳。因此’在基底之表面受前驅物 之作用後’利用各前驅物。t嘴及各清除氣㈣域所提供之 吸取作用對於前驅物或清除氣體進行排放。 由於_人ALD循環期間僅能於基底之表面上製作單一 原子層，在藉由具有複數第一喷嘴及第二喷嘴之喷嘴頭的 乍用下於噴嘴頭對基底之表面進行單次掃描下便可在基 201213605 數原子層，並且喷嘴頭之單次掃描是可 經由喷嘴頭或基底之移動而達成。於習知技術中，利= 移動機構對於喷嘴頭進行-快速前後移動下是可增力二 頭之择描次數’如此以達到對於基底之表面之多術喷嘴 然而，此用於製作複數 田 動機構之前後移動過程中產二==點在於其移 產生大的機械力且喷嘴頭必須抵 几機械力，當移動機構對已停止於結束 次加速移動時所產生媸幵士击β 1嘴頭再 生機械力更疋特別的大，因此容易造成 裝置及噴嘴頭之損壞。 用於增加噴嘴頭之掃描次數之另一習知技術解決方法 I其係提供繞著一迴轉轴心之一喷嘴頭，此迴轉轴心沿 著基底表面方向而實質延伸。藉由喷嘴頭之迴轉係可減少: ，—頭斤又之機械應力及力量。當喷嘴頭繞著一迴轉轴心 轉動時’迴轉中之喷嘴頭所具有之不同前驅物部分係 使付基底之表面交錯地受到至少第一前驅物及第二前驅物 入立乍用迴轉中之噴嘴頭之問題在於迴轉運動下之基底的 或特疋位置無法均勻地受到前驅物之作用，而 此問題可藉由增加噴嘴頭之迴轉速度而改善。然而，當喷 嘴=之迴轉速度增加時’喷嘴頭所受力量亦較大’如此將 使得喷嘴碩之機械結構變得更為複雜。 【發明内容】 本發明之目的在於提供—種裝置，藉此以解決上述習 技術的問題。依照申請專利範圍第i項之裝置的特徵部 6 201213605 分以達成本發明之目的，其特 著-迴圈路徑移動 # 、.、嘴頭設置用於沿 嗅嘴之位向⑽： 既定直線方向下之前驅物 ㈣之位向維持實質不變。依照 置的特徵部分亦達成本發明 视圍第13項之裝 設置用於在基底之表面 特徵在f喷嘴頭 於一既定吉雄古 方者一迴圈路徑移動，在相對 、 疋直線方向下之前驅物喷嘴之彳☆ a祕』 依照申請專利範圍第25項之：::：向維持實質不變。 明之目的。 項之方法的特徵部分更達成本發 附屬項中對於本發明之較佳實施例進行說明。 本發明之構想在於利用喷嘴頭之迴轉運動以增加位於 基底之表面上方之喷嘴頭掃描次數。於本發明巾 係用於沿著—迴圈路徑或—環狀路徑移動如此使得相對 於-直線方向下之噴嘴頭之位向維持不變，此直線方向表 不-既定直線。當噴嘴頭相對於基底而沿著迴圈路徑移動 時，在相對於基底之位向下之喷嘴頭或前驅物噴嘴之位向 係可有利地維持實質^變。&表示噴嘴頭並不會繞著一轴 心進行迴轉，但喷嘴頭是利用迴轉運動方式而沿著—迴圈 路徑移動，沿著迴圈路徑之喷嘴頭或前驅物噴嘴之位向維 持實質不變。迴圈路徑或環狀路徑可為一偏心迴圈、—橢 圓形迴圈或一圓形迴圈。 本發明之優點在於提供一種裝置，此梦 ι 101蒗置可同時利用 迴轉運動及使基底之表面均勻受到前驅物之作用。相較於 噴嘴頭之前後移動方式，利用迴轉運動可減少噴嘴頭所受 應力及力量。當噴嘴頭沿著迴圈路徑轉動時，嗔嘴頭或^ 201213605 驅物喷嘴之位向維㈣質不變’例如利用喷嘴頭之前後移 動可使得基底均句受到前驅物材料n 提供用於移動喷嘴頭之解決方法’藉此以解決習知技術中 之喷嘴頭之前後移動及迴轉運動時所產生的問題。 【實施方式】 第1圖表示本發明之一裝置之_實施例之示意圖。在 根據原子層沈積法之原理下，本發明之裝置使一基底6之 一表面 4 表面反應 又至少一第一前驅物A及一第二前驅物β之連續 。本發明之裝置包括一喷嘴頭2,喷嘴頭2包括 -或多個第一前驅物噴嘴及一或多個第二前驅物噴嘴，第 一前驅物喷嘴用於使基底6之表面4受第—前驅物八作 用’第二前驅物喷嘴用於使基底6之表面4受第二前驅物 B作用。f冑頭2 #可具有複數清除氣體喷嘴及亦可具有 複數排放喷嘴’這些清除氣體喷嘴及排放喷嘴位於複數前 驅物噴嘴之間H需注意的是’藉由在前驅物嘴嘴及 清除氣體喷嘴設置複數排放埠對於前驅物及清除氣體進行 排放時，則排放喷嘴是可予以省略。於一實施例中，噴嘴 頭2所包括之前驅物喷嘴、清除氣體喷嘴及排放噴嘴連續 包括以下順序：可選擇地重覆複數次之至少一第—前驅物 噴嘴、一第一排放通道、一清除氣體喷嘴、一第二前驅物 喷嘴 第一排放通道及一清除氣體嘴嘴。 本發明之裝置亦可包括用於將第一前驅物喷嘴/第二 前驅物噴嘴及可將清除氣體供應至噴嘴頭2之一手段（: 201213605 圖不），並且本發明之裝置亦可包括用於將來 苐-前驅物喷嘴/第二前驅 噴嘴碩2之 -手段（未圖示）。如第 :^月除氣體進行排玫之 圖所不，基底6沿著箭商^士 移動，如此基底6可於喷嘴頭2 者箭W方向 面受前驅物作用。—笑底 而使基底6之表 用 底移動機構（未圖示）用於移動# e 6。於第i圖中，基底6 用於移動基底 係為者箭碩3方向移動之一 $腹板’並且基底6亦可利用滾輪(未圖示)或類似物進一 移二：果基广“為—撓性條狀物、腹板或類似：201213605 VI. Description of the Invention: [Technical Field] The present invention relates to a device comprising a nozzle head, such that the surface of the substrate is subjected to a continuous surface reaction of at least a first precursor and a second precursor, in particular It is a device according to the scope of the patent application. The invention also relates to an arrangement for treating a surface of a substrate such that the surface of the substrate is subjected to a continuous surface reaction of at least a first precursor and a second precursor, in particular according to the scope of claim 13 - a configuration. Further, the present invention relates to a method for treating a surface of a substrate according to a method according to the 25th aspect of the patent application. [Prior Art] Among several types of devices of the prior art, according to the principle of atomic layer deposition meth〇d (AL)), these devices and nozzle heads are used to expose at least one surface of a substrate. The surface of the substrate is treated by a continuous surface reaction of a precursor and a second precursor. In ALD applications, it is common to introduce two gas precursors into the ALD reaction crucible via separate stages. 4 The precursor of the ruthenium has a deposition of a single atomic layer under the reaction of the surface with the substrate. Typically, t, the precursor phase is carried out immediately after or in a separate phase from the purge phase, and the precursor precursor phase is required to remove excess precursor on the surface of the substrate before introducing other precursors. The ALD process requires sequential transfer of multiple precursors to the surface of the substrate. This repeated alternating surface reaction sequence and the intermediate phase between them are the general ALD deposition cycles. The ald device of the 201213605 S-to-Technology generally includes a nozzle head having one or more first precursor nozzles for subjecting the surface of the substrate to the surface of the first precursor, having the surface of the substrate subjected to the second precursor Acting as one or more of the second precursor nozzles, and having one or more scavenging gas regions for causing the surface of the substrate to be subjected to a scavenging gas or having the surface of the substrate subjected to a scavenging gas One or more purge gas regions between the discharge nozzle and the third precursor nozzle. The plurality of nozzles in the nozzle head are arranged in a staggered continuous manner: a first precursor nozzle, a purge gas region, a second precursor nozzle, a purge gas region, a first precursor nozzle, a /month gas removal region, a first rigid drive The nozzle or the like β Therefore, when the nozzle head moves on the surface of the substrate, a growth layer can be formed on the surface of the substrate in accordance with the ALD method. The nozzle head may further include a discharge passage disposed between the first precursor nozzle and the second precursor nozzle or between a first precursor nozzle and a purge gas region or a second precursor nozzle And between the gas areas. After the surface of the substrate is subjected to the precursor, the discharge channel is used to discharge the precursor and the purge gas. Alternatively, in the prior art, the precursor nozzle and purge gas region includes at least one port for supplying the precursor or purge gas and at least one outlet port for discharging the precursor or purge gas. Therefore, each precursor is used after the surface of the substrate is subjected to the action of the precursor. The suction provided by the t-mouth and each purge gas (4) field discharges the precursor or purge gas. Since a single atomic layer can be formed only on the surface of the substrate during the ALD cycle, the surface of the substrate is scanned by the nozzle head by a nozzle head having a plurality of first nozzles and a second nozzle. The atomic layer can be on the base 201213605, and a single scan of the nozzle tip can be achieved via movement of the nozzle tip or substrate. In the prior art, the moving mechanism of the movable body for the nozzle head - the rapid forward and backward movement is the number of times that the force can be increased by two, so that the multiple nozzles for the surface of the substrate can be used. However, this is used to make a plurality of fields. Before the mechanism moves in the middle of the movement, the second == point is that the movement produces a large mechanical force and the nozzle head must abut the mechanical force. When the moving mechanism stops the end of the sub-acceleration movement, the gentleman hits the β 1 mouth regeneration. The mechanical force is particularly large, so it is easy to cause damage to the device and the nozzle head. Another conventional technical solution for increasing the number of scans of the nozzle tip is to provide a nozzle head around a pivot axis that extends substantially along the direction of the substrate surface. By the rotation of the nozzle head, it is possible to reduce: - the mechanical stress and strength of the head. When the nozzle head rotates about a pivot axis, the different precursor portions of the nozzle head in the rotation cause the surface of the substrate to be staggered by at least the first precursor and the second precursor. A problem with the nozzle head is that the base or peculiar position of the base under swivel motion cannot be uniformly affected by the precursor, and this problem can be improved by increasing the rotational speed of the nozzle tip. However, when the nozzle = the speed of rotation increases, the nozzle tip is also subjected to a larger force. This will make the mechanical structure of the nozzle more complicated. SUMMARY OF THE INVENTION An object of the present invention is to provide an apparatus for solving the above problems of the prior art. According to the feature part 6 201213605 of the device of the scope of the patent application, the purpose of the present invention is to achieve the purpose of the present invention, the special loop-loop path movement #, ., and the mouth are set for the orientation along the sniffer mouth (10): the predetermined straight line direction The position of the previous drive (4) remains unchanged. According to the feature portion of the present invention, the arrangement of the thirteenth item of the present invention is also provided for the surface feature of the substrate to be moved in a path of the f nozzle head in a circle of a predetermined Jixiong ancient, in the opposite direction, in the direction of the straight line The nozzle 彳 ☆ a secret 』 according to the scope of the patent application of the 25th:::: to maintain the essence. The purpose of Ming. The features of the method of the present invention are further described in the appended claims. The idea of the present invention is to utilize the rotary motion of the nozzle tip to increase the number of nozzle head scans above the surface of the substrate. The towel of the present invention is used to move along the loop path or the loop path such that the position of the nozzle head relative to the - linear direction remains constant, and the linear direction does not define a straight line. When the nozzle head moves along the loop path relative to the substrate, the orientation of the nozzle tip or precursor nozzle down the position relative to the substrate can advantageously maintain substantial variation. & means that the nozzle head does not rotate around an axis, but the nozzle head moves along the loop path by means of a rotary motion, maintaining the essence along the nozzle head of the loop path or the position of the precursor nozzle constant. The loop path or loop path can be an eccentric loop, an elliptical loop or a circular loop. It is an advantage of the present invention to provide a device that utilizes both rotary motion and uniform surface of the substrate by the precursor. The rotary motion reduces the stress and force on the nozzle tip compared to the front and rear movement of the nozzle tip. When the nozzle head rotates along the loop path, the position of the nozzle head or the nozzle of the 201213605 is unchanged. For example, before and after the nozzle head is moved, the substrate is provided by the precursor material n for movement. The solution of the nozzle head is used to solve the problems caused by the movement and the slewing movement of the nozzle head in the prior art. [Embodiment] Fig. 1 is a view showing an embodiment of an apparatus of the present invention. According to the principle of the atomic layer deposition method, the apparatus of the present invention causes the surface of one surface 4 of a substrate 6 to react with at least one of the first precursor A and the second precursor β. The apparatus of the present invention includes a nozzle head 2 comprising - or a plurality of first precursor nozzles and one or more second precursor nozzles, the first precursor nozzles for subjecting the surface 4 of the substrate 6 to the first The precursor eight action 'second precursor nozzle is used to cause the surface 4 of the substrate 6 to be subjected to the second precursor B. f胄头2# may have a plurality of purge gas nozzles and may also have a plurality of discharge nozzles. 'The purge gas nozzles and discharge nozzles are located between the plurality of precursor nozzles. H. Note that 'by the precursor nozzle and the purge gas nozzle When a plurality of discharges are provided and the precursors and purge gases are discharged, the discharge nozzles can be omitted. In one embodiment, the nozzle head 2 includes a precursor nozzle, a purge gas nozzle, and a discharge nozzle continuously including the following sequence: optionally repeating at least one first-precursor nozzle, a first discharge passage, and one A gas purge nozzle, a second precursor nozzle first discharge passage, and a purge gas nozzle. The apparatus of the present invention may also include means for supplying the first precursor nozzle/second precursor nozzle and a means for supplying purge gas to the nozzle head 2 (: 201213605), and the apparatus of the present invention may also include In the future, the 苐-precursor nozzle/second precursor nozzle 2 means (not shown). For example, in the first month, except for the gas, the base 6 is moved along the arrow, so that the base 6 can be acted upon by the precursor in the direction of the arrow head 2 of the nozzle. - The bottom of the base 6 is used to move the # e 6 using a bottom moving mechanism (not shown). In the figure i, the substrate 6 is used to move the substrate system to one of the three directions of the arrow, and the substrate 6 can also be moved by a roller (not shown) or the like: - flexible strips, webs or similar:
6亦可自-第-滾輪移至一第二滾輪，藉由 J 二滾輪間之喷嘴頭2使得基底6之一表面4受至第 前驅物Α及一第二前驅物Β之連續表面反應。因此，喷嘴 頭2可設置於第-滾輪及第二滾輪之間。於第丄圖中，喷 嘴頭2可設置於基底6之頂表面4上，但喷嘴頭2亦可設 置於基底6之底表面，或是一或多個喷嘴頭2可設置於基 底6之頂表面及底表面。本發明之裝置亦可包括一處理室 圖示）基底6叹置於處理室中且利用喷嘴頭2對於處 =室中之基底6進行處理’或是基底6可設置於不具處理 至之周圍大氣中。因此，基底6可連續地移動通過處理室 或可替代性地利用批次加工對於基底6進行處理。 根據本發明之裝置包括一噴嘴頭移動機構2〇，喷嘴頭 移動機構20用於沿著一迴圈移動喷嘴頭2。此表示喷嘴頭 2不是繞著本身進行迴轉，並且噴嘴頭2繞著通過喷嘴頭2 之一軸心進行迴轉，而整個噴嘴頭2是沿著一迴圈路徑移 動迴圈路徑可為一偏心迴圈路徑、一橢圓形迴圈路徑或 9 201213605 一圓形迴圈路徑。喷嘴頭2沿著迴圈移動，在相對於沿著 迴圈路徑之一既定直線方向下，喷嘴頭2之位向或第—前 驅物喷嘴/第二前驅物喷嘴之位向係維持實質不變。喷嘴頭 2係設置用於在一移動表面上移動，在相對於既定直線方 向下，喷嘴頭2之位向或第一前驅物噴嘴/第二前驅物噴嘴 之位向係維持實質不變。移動表面可為-平面或一曲面。 於第1圖所示之-實施例中，一喷嘴頭2係在基底6之表 面4上沿著一偏心或一橢圓形路徑移動，前驅物及清除氣 體可經由流體連接件而供應至喷嘴頭2。可替代地，喷嘴 =2具广或多個前驅物及，或清除氣體容器、瓿或類似 ，使侍别驅物及/或清除氣體可與喷嘴頭2同時移動，藉 此配置可減少i車蛀；P ^ 接件之數量。 —移動喷嘴頭2之需高度技術流體連 〜=:)Γ:2沿著迴圏移動時……)至 限位置。由第迴圈路徑移動之t嘴頭2之極 可看出’沿著偏心迴圈路秤杆谁弋 之喷嘴頭2是繞荖一教 圈峪L仃進或移動 移動表面上之一固定中間彰；7 货 圖之垂直方向上 疋中間點7。第！ 平方向上之切2Γ 動距離是大圖之水 中b 之移動距離，此表示在第1圖之平φ 〒之移動。階段 口心十面 位置。在位置a)，^對^基底6之噴嘴頭2之一初始 由第1圖可看出，地、頭2疋均勻地定位於基底6上方。 沿著迴圈路徑移動時嘴碩2是寬於基底6,因此當噴嘴頭2 邊緣區域進行處理。卷嘴嘴頭2可對於基底6之表面4之 虽嘴嘴頭2沿著箭頭9繞著中間點7 10 201213605 ㈣90度’喷嘴頭2由階段a)移動至階段b)。於階㈣ 中，喷嘴頭2之左端係實質齊平於基底6之左邊緣，、 喷嘴頭2之右端係超過基底6之邊緣。當噴嘴頭^由/ ^ a)移動至階段b)時，噴嘴頭2係向前且向右移動越過 點7。當喷嘴頭2由階段^向前及向左移動至階段: 噴嘴頭2再次均勾地定位於基底6上方。當喷嘴頭2由階 段c)向後及向左移動至階段d)時，喷嘴頭2之右端係齊平 於基底6之右邊緣。隨後’喷嘴頭2向右及向後移 且回到初始位置及完成繞著迴圈路徑之 隨後沿著相同迴圈路徑開始進行-新循環。 並且 由第1圖可看出，當喷嘴頭2沿著迴圈路 相對於一直線方向下之 工動時， 相對於-直線方向下Ϊ 維持不變。因此， ^下之則驅物喷嘴之位向亦唯持$ _ 本發明之構想而言〜其总… Τ、隹持不變。就 直線方向時，噴嘴 土 _ 3 土底6之移動方向定義 路徑移動，如此第—/t在基底6之表面4上沿著-迴圈 實質維持不變，並且：驅物喷嘴及第二前驅物噴嘴之位向 著迴圈路經移二::是在相對於基底6之位向下之沿 向實質維持不變 月J驅物喷嘴及第二前驅物嘴嘴之位 2 π装、 表示當基底6亦進行移動拄 .^ 者迴圈路徑移動時 丁移動時，喷嘴頭 之移動’如此才能在相# 移動需考慮到基底6 之位向實質不變。對於f於基底6之位向下維持噴嘴頭2 較佳設置下，於、沿著迴圈路徑之喷嘴頭2移動進行 變。 6及噴嘴頭2間之垂直距離可維持不 201213605 弟2圖表示第1圖之喷嘴頭 括複數第一前驅物噴嘴8及複數第二前驅物喷嘴1〇，利用 第;前驅物嘴嘴8使基底6之表面4受-第-前驅物作 用’利用第二前驅物喷嘴10使基底6之表面4受一第 驅物作用。如第2圖所示，於噴嘴頭2 貫哭碩2中之第一别驅物噴 二前驅物喷10《以連續交錯方式設置。為簡化 :清除氣體喷嘴及可允許的排放噴嘴係予以省略。第 =物嘴嘴8及第二前驅物喷嘴1()係為具有—開放部件 且；放：通道’開放部件係沿著等長條形通道之縱向延伸 於基底6之表面4，藉由開放部件將前驅物供 μ主基底6之表面4。由笫 前驅物喷嘴8、1()係沿著基 ’長條形第一、二 直於基底6之移動方向3:如第=度方向延伸且實質垂 之第-、二前驅物喷嘴 沿者通圈路徑6 can also be moved from the - roller to a second roller, and the surface 4 of the substrate 6 is subjected to a continuous surface reaction of the precursor precursor and a second precursor by the nozzle head 2 between the two rollers. Therefore, the nozzle head 2 can be disposed between the first roller and the second roller. In the second drawing, the nozzle head 2 can be disposed on the top surface 4 of the substrate 6, but the nozzle head 2 can also be disposed on the bottom surface of the substrate 6, or one or more nozzle heads 2 can be disposed on the top of the substrate 6. Surface and bottom surface. The apparatus of the present invention may also include a process chamber diagram) the substrate 6 is placed in the processing chamber and processed by the nozzle head 2 for the substrate 6 in the chamber = or the substrate 6 may be disposed in a surrounding atmosphere that is not treated. in. Thus, the substrate 6 can be moved continuously through the processing chamber or alternatively the substrate 6 can be processed using batch processing. The apparatus according to the present invention includes a nozzle head moving mechanism 2 for moving the nozzle head 2 along a loop. This means that the nozzle head 2 does not rotate around itself, and the nozzle head 2 rotates around one of the axes of the nozzle head 2, and the entire nozzle head 2 moves along a loop path and the loop path can be an eccentricity. Circle path, an elliptical loop path or 9 201213605 a circular loop path. The nozzle head 2 moves along the loop, and the position of the nozzle head 2 or the position of the first precursor nozzle/second precursor nozzle remains substantially unchanged with respect to a predetermined linear direction along one of the loop paths. . The nozzle head 2 is arranged to move on a moving surface, and the position of the nozzle head 2 or the position of the first precursor nozzle/second precursor nozzle remains substantially constant with respect to a predetermined straight line. The moving surface can be a - plane or a curved surface. In the embodiment shown in Figure 1, a nozzle head 2 is moved along an eccentric or elliptical path on the surface 4 of the substrate 6, and the precursor and purge gas can be supplied to the nozzle tip via the fluid connection. 2. Alternatively, the nozzle = 2 wide or multiple precursors and or the purge gas container, crucible or the like, so that the whisker and/or the purge gas can be moved simultaneously with the nozzle head 2, whereby the configuration can reduce the i car蛀; P ^ The number of connectors. - Move the nozzle head 2 to the required height of the technical fluid connection ~=:) Γ: 2 When moving along the back .........) to the limit position. The pole of the mouth 2 moved by the path of the second loop can be seen as 'the crater along the eccentric loop. Whoever licks the nozzle head 2 is winding around a circle or moving one of the moving surfaces. ;7 In the vertical direction of the goods map, the middle point is 7. The first! The squared upward cut is the moving distance of b in the water of the large image, which indicates the movement of the flat φ 第 in Fig. 1. Stages of the ten-point position. In position a), one of the nozzle heads 2 of the substrate 6 is initially shown in Fig. 1, and the ground and the head 2 are uniformly positioned above the substrate 6. When moving along the loop path, the mouth 2 is wider than the base 6, so that the edge area of the nozzle head 2 is processed. The mouthpiece 2 can be moved to the surface 4 of the substrate 6 although the mouthpiece 2 moves along the arrow 9 around the intermediate point 7 10 201213605 (four) 90 degrees 'nozzle head 2 from stage a) to stage b). In the fourth step (4), the left end of the nozzle head 2 is substantially flush with the left edge of the substrate 6, and the right end of the nozzle head 2 is beyond the edge of the substrate 6. When the nozzle head is moved from /^a) to stage b), the nozzle head 2 moves forward and to the right past point 7. When the nozzle head 2 is moved from the stage to the left and to the left to the stage: the nozzle head 2 is again positioned above the substrate 6 in a hooked manner. When the nozzle head 2 is moved backward and leftward to the stage d) by the stage c), the right end of the nozzle head 2 is flush with the right edge of the substrate 6. The 'nozzle head 2 is then moved to the right and backwards and back to the initial position and the completion of the new loop around the loop path followed by the same loop path. Further, as can be seen from Fig. 1, when the nozzle head 2 is moved along the loop path with respect to the straight line direction, the Ϊ remains unchanged with respect to the - linear direction. Therefore, the position of the nozzle is also only $ _ the concept of the invention ~ its total ... Τ, hold unchanged. In the case of the linear direction, the direction of movement of the nozzle soil _ 3 soil bottom 6 defines the path movement, such that the first / / t remains substantially constant along the - loop on the surface 4 of the substrate 6, and: the nozzle of the drive and the second precursor The position of the nozzle of the object is shifted toward the loop path: it is maintained at a position along the downward direction relative to the base 6 to maintain the constant position of the J-jet nozzle and the second precursor nozzle. The substrate 6 is also moved. When the loop is moved, the movement of the nozzle head is moved, so that the movement of the nozzle can be considered to be substantially constant. It is preferable to maintain the nozzle head 2 downward in the position of the base 6 and to move along the nozzle head 2 along the loop path. 6 and the vertical distance between the nozzle heads 2 can be maintained without 201213605. The second diagram shows that the nozzle head of Fig. 1 includes a plurality of first precursor nozzles 8 and a plurality of second precursor nozzles 1 , using the first precursor nozzle 8 The surface 4 of the substrate 6 is subjected to a -first-precursor action' using the second precursor nozzle 10 to cause the surface 4 of the substrate 6 to be subjected to a precursor. As shown in Fig. 2, the first nozzle in the nozzle head 2 is crying 2, and the second precursor spray 10 is set in a continuous interlaced manner. For simplification: the purge gas nozzle and the allowable discharge nozzle are omitted. The first mouthpiece 8 and the second precursor nozzle 1 () have an open member; and the channel: open member extends along the longitudinal direction of the equal length channel to the surface 4 of the substrate 6, by opening The component supplies the precursor to the surface 4 of the μ main substrate 6. Since the precursor nozzles 8, 1 () are along the base 'long strip first, two straight to the base 6 moving direction 3: extending in the direction of the first degree and substantially hanging the first and second precursor nozzle edges Passing path
^ VL ^ 1 U之位向貫質維持不變。當A 底6沿者箭頭3方向移動時 ^ 前驅物之交錯表面反應。藉由二_ ®4受第-、二 方式可增加喷嘴頭2所執 之喷嘴頭2之移動 構及第-、二前驅物喷嘴8〗，次數。在喷嘴頭2之結 動之喷嘴頭2的作用下^ 之位向與沿著迴圈路徑移 货嘴^向進行前後移動相對於基以而沿著 表面4受第-、二前壤物用嘴嘴頭2使得基底6之 2相對於基底6沿著箭頭^錯表面反應。“，噴嘴頭 交錯表面反應。沿著箭頭丨】方向進仃左右移動並不會產生 對第-、二前驅物喷嘴8、 °最】移動長度係為一成 、10之長度’較佳約為一至然後 12 201213605 第一、二前驅物噴嘴8、ι〇 嘴頭2之平均速度需，佳 者前頭U方向之噴 十’迓度需較佳兩於基底6沿著箭頭3 之平均速度，更佳為沿著舒 移動 耆箭頭11方向之噴嘴頭2 度至少二倍高於基底6沿 您十均速 〜者箭頭3方向移動之平均 喷嘴頭2亦可包括—輪屮 又。 輸出面，此輸出面連續包括以下 順序：可選擇地重覆複數次之 喷嘴Π。及一排放通道。 -體通道— 更佳為噴嘴頭2之輸出面連續包括以下順序 地重覆複數次之-第-前驅物㈣8、_第—排放通= 凊除亂體通道、一第二前驅物喷嘴1。' -排放通道及一 清除氣體通道。 第3圖示意表示噴嘴頭移動機構20之一實施例。喷嘴 頭移動機構20係藉由一周轉變速機構提供如第】圖所示之 喷嘴頭2之一迴圈。周轉變速機構2〇包括一太陽輪2卜 -行星輪24及-環輪26 ’其中’行星輪24係連接於太陽 輪22,環輪26係連接於行星輪24。喷嘴頭2係連接於行 星輪24,藉此提供如第丨圖所示之喷嘴頭 實施例中，太陽輪22是利用—馬達而迴轉。太陽輪 行星輪24及環輪26可為鑛齒狀之結構，藉此形成所需傳 動而使得喷嘴頭以所需速度進行移動。另一方面，太陽輪 22、行星輪24及環輪26之直徑係用於定義迴圈之所需形 狀及尺寸。 需注意的是，噴嘴頭移動機構亦可採用其它數種方式 建構以達到本發明之實施。就噴嘴頭移動機構而言，其僅 13 201213605 需在相對於沿著迴圈之既定直線方. 卜不必變更f嘴頭 2 之位向。迴圏路徑亦可為喷嘴頭可 、 仃重覆運行之里它類 里之迴圈路徑。再者，喷嘴頭亦可 ^ 木用許多替代方式而形 成。 本發明亦有關於一種配置，喷嘧 ^, 嘴碩2設置用於在基底 b之表面4上方沿著一迴圈路徑移動 治+丄 砂動，在相對於一既定直 線方向下之喷嘴頭2之位向或前 4士 — # 仍貫嘴8、1 〇之位向維 持貫質不變。既定直線方向可為基 立“ 勹丞底2之位向或基底2之 移動方向。於第2圖中，基底6之移 士& <移動方向係為箭頭3之 直線方向。 因為本發明之技術優點，本 、— 个货明之概念可經由各種方 式加以實施，對於熟習此項技藝 议if疋顯而易見的。雖然較 佳實施例揭露如上，然其並非用以限制本發明及其實施 例’在不脫離本發明之精神和範圍内，當可做更動與潤飾。 【圖式簡單說明】 明之相關較佳實施例進 以下將配合所附圖式針對本發 行詳述如下： 第1圖表示本發明之操作之示意圖； 第2圖表示第1圖之-噴嘴頭之詳圖；以及 第3圖表示用㈣㈣嘴頭之本發明之-實施例之原 主要元件符號說明】 14 201213605 1 〇 ~第二前驅物喷嘴 11〜箭頭 13〜箭頭 2〜喷嘴頭 20〜喷嘴頭移動機構 22〜太陽輪 2 4〜行星輪 26〜環輪 3~箭頭 4 ~表面 6~基底 7〜中間點 8~第一前驅物喷嘴 9~箭頭 a)、b)、c)、d)、6)~階段 15^ The position of VL ^ 1 U remains unchanged. When the A bottom 6 moves in the direction of the arrow 3, the interleaved surface of the precursor reacts. The second and second modes can increase the movement of the nozzle head 2 and the first and second precursor nozzles 8 by the nozzle head 2 by the second and second modes. Under the action of the nozzle head 2 of the nozzle head 2, the position of the nozzle head 2 is moved back and forth along the path of the nozzle along the loop path, and is moved relative to the base along the surface 4, and is subjected to the first and second objects along the surface 4. The mouthpiece 2 causes the substrate 6 to react with respect to the substrate 6 along the arrow. "The nozzle head is staggered on the surface. The left and right movements in the direction of the arrow 并" do not produce the length of the first and second precursor nozzles 8, which are 10%, and the length of 10 is preferably about One to then 12 201213605 The average speed of the first and second precursor nozzles 8, the 〇 〇 mouth 2, the preferred one in the U direction of the first 10 迓 degree needs to be better than the average speed of the substrate 6 along the arrow 3, Preferably, the nozzle tip 2 along the direction of the arrow 11 in the direction of the arrow is at least twice as high as the average nozzle head 2 moving along the base 6 in the direction of your average speed ~ arrow 3 may also include - the rim and the output surface, this The output face continuously includes the following sequence: optionally repeating the plurality of nozzles Π and a discharge passage. - Body passage - more preferably, the output face of the nozzle head 2 is continuously repeated in the following order - the first-precursor (4) 8, _ first-discharge pass = tamper-evident passage, a second precursor nozzle 1. '-discharge passage and a purge gas passage. Fig. 3 schematically shows an embodiment of the nozzle head moving mechanism 20. The head moving mechanism 20 is a one-speed shifting machine The structure provides a loop of the nozzle head 2 as shown in the figure. The peripheral speed changing mechanism 2 includes a sun gear 2 - a planetary gear 24 and a - ring wheel 26 ' wherein the planetary gear 24 is coupled to the sun gear 22 The ring wheel 26 is coupled to the planet gear 24. The nozzle head 2 is coupled to the planet gears 24, thereby providing a nozzle head embodiment as shown in the first figure, wherein the sun gear 22 is rotated by a motor. The wheel 24 and the ring wheel 26 may be of a mineral-toothed configuration whereby the desired transmission is formed to cause the nozzle head to move at a desired speed. On the other hand, the diameter of the sun gear 22, the planet gears 24 and the ring wheel 26 are used. In order to define the desired shape and size of the loop, it should be noted that the nozzle head moving mechanism can also be constructed in several other ways to achieve the implementation of the present invention. As far as the nozzle head moving mechanism is concerned, only 13 201213605 needs to be relatively In the straight line along the circle. It is not necessary to change the position of the mouth 2. The return path can also be the loop path in the class where the nozzle head can be repetitively operated. Alternatively, the wood may be formed in a number of alternative ways. The invention is also relevant In one configuration, the nozzle 2 is arranged to move the treatment + 丄 sand movement along a loop path above the surface 4 of the substrate b, in the direction of the nozzle head 2 relative to a predetermined linear direction. 4士—# The position of the mouth is still 8, and the position of the 〇 is unchanged. The predetermined linear direction can be the direction of the base of the 勹丞 bottom 2 or the movement of the base 2. In Fig. 2, the shifting direction of the base 6 &< moving direction is the direction of the straight line of the arrow 3. Because of the technical advantages of the present invention, the concept of the present invention can be implemented in various ways, and it is obvious to those skilled in the art. Although the preferred embodiment is disclosed above, it is not intended to limit the invention and its embodiments, and may be modified and modified without departing from the spirit and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS The preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings: FIG. 1 is a schematic view showing the operation of the present invention; FIG. 2 is a view showing the nozzle head of FIG. Detailed drawing; and Fig. 3 shows the original main component symbol description of the embodiment of the present invention using (4) (4) mouth] 14 201213605 1 第二~2nd precursor nozzle 11~arrow 13~arrow 2~nozzle head 20~nozzle head Moving mechanism 22 to sun gear 24 to planet wheel 26 to ring wheel 3 to arrow 4 to surface 6 to base 7 to intermediate point 8 to first precursor nozzle 9 to arrow a), b), c), d), 6)~ Stage 15