TW201212248A - A structure of photovoltaic cell - Google Patents

A structure of photovoltaic cell Download PDF

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TW201212248A
TW201212248A TW099129844A TW99129844A TW201212248A TW 201212248 A TW201212248 A TW 201212248A TW 099129844 A TW099129844 A TW 099129844A TW 99129844 A TW99129844 A TW 99129844A TW 201212248 A TW201212248 A TW 201212248A
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energy gap
layer
gap layer
photovoltaic cell
energy
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TW099129844A
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TWI436490B (en
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Chiung-Wei Lin
Yi-Liang Chen
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Univ Tatung
Tatung Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
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  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

A structure of photovoltaic cell for improving conversion efficiency has been disclosed, including a first bandgap layer, a second bandgap layer, a third bandgap layer, a back electrode and a finger electrode, wherein the first bandgap layer is a wafer while the second bandgap layer is a semiconductor film with a thickness of 1 to 100 Å and a greater bandgap than one of the first bandgap layer, and the third bandgap layer comprises wide bandgap materials and a greater bandgap than one of the second bandgap layer. Thereby the lattice mismatch of heterostructures between the first bandgap layer and the third bandgap layer may be solved by the second bandgap layer. Also, the carrier recombination within devices may be decreased and the output photocurrent may thus be enhanced to improve energy conversion efficiency.

Description

201212248 六、發明說明： 【發明所屬之技術領域】 本發明係關於一種光伏電池結構，尤指一種具有能隙 變化結構之光伏電池結構。 【先前技術】 近來研九再生能源技術蔚為風潮，而太陽能電池因可 能成為未來能源供應之技術，為目前工業界所矚目之主要 技術。是以利用太陽能電池來實現太陽能源的開發，是2 ^ 世、..己極有發展潛力的光電技術之一。如圖1所示係為一般習 知P-N接面結構太陽能電池之結構’包含有指狀電極1〇、窗 層1丨' N層12、p型矽晶片13及背電極14，該窗層丨丨係覆蓋 於N層12表面，促使更多入射光子進入太陽電池内部，但往 往因内部>^層122N型材料厚度太厚，導致入射光無法有效 到達PN接面121進而形成光損失。在照光下，空乏區中的光 生載子將因為N層12厚度太厚、缺陷增加導致載子移動困 難' 容易形成複合，進而降低整體太陽能電池轉換效率。 為有效解決習知結構中N層過厚之問題，過去有人提 出一種移除N層之太陽能電池結構（請參考圖2)。其太陽 能電池結構，包含：指狀電極2〇、窗層U、？型矽晶片”及 背電極23。其中該窗層2丨係以寬能隙材料製成，而覆於口型 石夕晶片22上’藉此使人射光可直接到達接面，因此不需N 層即可形成載子’避免因N層過厚產生之光損失。然，此結 構將因晶格匹配差異過大造成界面缺陷增加。而於元件照 201212248 光期間’ PN接面其内建電場所產生之載子大多數在輸出過 私被復合，是以導致光電流幾乎消失。 【發明内容】 •為解決上述問題，本發明之一目的係提供一種光伏電 構其利用寬能隙材料使多數光子透射（寬能隙本身幾 乎不吸收光子）’即將光子趕到窄能隙層以提升光子在寬能201212248 VI. Description of the Invention: [Technical Field] The present invention relates to a photovoltaic cell structure, and more particularly to a photovoltaic cell structure having a structure with a variable energy gap. [Prior Art] Recently, research and development of renewable energy technologies has become a trend, and solar cells are the main technologies that are currently attracting attention in the industry because they may become technologies for future energy supply. It is the use of solar cells to realize the development of solar energy sources. It is one of the photovoltaic technologies that have great potential for development. As shown in FIG. 1 , the structure of a conventional PN junction structure solar cell includes a finger electrode 1 , a window layer 1 丨 'N layer 12 , a p-type germanium wafer 13 and a back electrode 14 . The lanthanide layer covers the surface of the N layer 12, causing more incident photons to enter the interior of the solar cell, but often due to the thickness of the internal <^ layer 122N type material being too thick, the incident light cannot effectively reach the PN junction surface 121 to form a light loss. Under illumination, the photo-generated carriers in the depletion zone will be difficult to form due to the thickness of the N-layer 12 being too thick and the defects increasing, which will easily form a composite, thereby reducing the overall solar cell conversion efficiency. In order to effectively solve the problem of excessive thickness of the N layer in the conventional structure, a solar cell structure for removing the N layer has been proposed in the past (refer to Fig. 2). Its solar cell structure includes: finger electrode 2〇, window layer U,? a type of germanium wafer" and a back electrode 23. The window layer 2 is made of a wide energy gap material and overlies the lip-shaped wafer 22, thereby allowing the human light to directly reach the junction, so no N is needed. The layer can form a carrier to avoid the loss of light due to the excessive thickness of the N layer. However, this structure will increase the interface defects due to the difference in lattice matching. However, during the period of the 201212248 light, the PN junction has its built-in electric field. Most of the generated carriers are composited at the output, so that the photocurrent is almost eliminated. [Invention] In order to solve the above problems, an object of the present invention is to provide a photovoltaic structure which utilizes a wide bandgap material to make a majority Photon transmission (the wide energy gap itself absorbs almost no photons) 'will push the photon to the narrow energy gap layer to enhance the photon in wide energy

隙與窄能隙界面空乏區被吸收的機會，進而解決N層過厚造 成光損失的問題。 本1明之另一目的在於提供一種光伏電池結構，以解 决異貝接面晶格不匹配所引起之接面缺陷與光生載子複合 的問題。 ^因此，本發明提出一種光伏電池結構，其包括：第一 ::隙層’係為矽晶#，其具有一第一表面及一第二表面； 第隙層，係為厚度介於卜1〇〇入之半導體薄膜其設置 於第：能隙層之第一表面上’且能隙大於第一能隙層之能 隙处第三能隙層’係、包含有寬能隙導電材料，其設置於第 匕隙層上且其此隙大於第二能隙層之能隙；背部電極， 係與第-能隙層之第二表面相接；以及指狀電極，係設置 於第三能隙層上，並與第三能隙層相接。 方、本t明之—貫施例中，⑪晶片係為？型_晶片或類似 物，但不侷限於此，亦即N型矽晶片亦可使用。 於本發明之一實施例中，半導體 膜，但不侷限於此，其他能隙介於第 層間之類似薄膜亦可使用。 薄膜係可為非晶矽薄 —能隙層及第三能隙 201212248 於本發明之一實施例中，半導體薄膜係為本質半導 體、N型半導體或P型半導體之任一種。 於本發明之一實施例中，第二能隙層之厚度較佳為 1〜5〇A，更佳為卜i〇A。 於本發明之一實施例中，寬能隙導電材料係透明導電 氧化物（Transparent Conducting Oxide，TCO)。舉例來古兒， 該透明導電氧化物包括但不限於：AZ0、I了〇、ct〇、The gap between the gap and the narrow energy gap interface is absorbed, and the problem of light loss caused by the excessive thickness of the N layer is solved. Another object of the present invention is to provide a photovoltaic cell structure for solving the problem of junction defects caused by lattice mismatch of different shell junctions and photo-generated carriers. Therefore, the present invention provides a photovoltaic cell structure comprising: a first:: a gap layer is a twin crystal, having a first surface and a second surface; the first layer is a thickness of The semiconductor film that is implanted is disposed on the first surface of the first energy gap layer and has a wider gap than the energy gap of the first energy gap layer, and includes a wide energy gap conductive material. a gap disposed on the first gap layer and greater than the energy gap of the second energy gap layer; a back electrode connected to the second surface of the first energy gap layer; and a finger electrode disposed in the third energy gap On the layer, and connected to the third energy gap layer. In the case of the method, the 11-chip system is? Type_wafer or the like, but not limited thereto, that is, an N-type germanium wafer can also be used. In one embodiment of the invention, the semiconductor film, but not limited thereto, other similar films having an energy gap between the first layers may also be used. The thin film system may be an amorphous thin layer - a gap layer and a third energy gap. 201212248 In one embodiment of the invention, the semiconductor thin film is any one of an intrinsic semiconductor, an N-type semiconductor, or a P-type semiconductor. In an embodiment of the invention, the thickness of the second energy gap layer is preferably 1 to 5 Å, more preferably 〇i〇A. In an embodiment of the invention, the wide gap conductive material is a Transparent Conducting Oxide (TCO). For example, the transparent conductive oxide includes but is not limited to: AZ0, I, 〇, ct〇,

ZnO:A卜 ZnGa2〇4、Sn02:Sb、Ga2〇3:Sn、AgIn〇2:sn、ιη2〇 3:Zn、CuA102，LaCU〇S、NiO、CuGaOd SrCu2〇2之任一種。 較佳地’該透明導電氧化物係為AZC^tIT〇e更佳地，該透 明導電氧化物係為為AZ0。於本發明之一實施例中，背部 電極與第一能隙層之第二表面之間形成有一背部電場 (Back Surface Field，BSF)。 於本發明之-實施例中’光伏電池結構中之各能隙層 之能隙大小不特別限定，係依所需光伏電池用途而改變’ 較佳為第一能隙層之能隙大小係介於丨“▽到丨之間， 而第三能隙層之能隙大小係介於2.4^到4eV。 本發明之光伏電池結構係利用窄能隙材料之第一能隙 層及寬能隙材料之第三能隙層形成能隙漸近變化結構，藉 以降低太陽光影反射，“增加照射純元件㈣ 的機會。 再者，於該能隙漸近變化結構中置入一極薄（厚度約八 等級)，且能隙大小介於結構中宽能隙與窄能隙之間的薄膜 201212248 材料當作第二能隙層，以解決第一能隙層及第三能隙層間 異貝晶格匹配差異過大的問題，減少内部缺陷影響。 當元件接受照光之後，第一能隙層及第三能隙層之間 界面容易產生光生載子，並且以穿遂方式通過該第二能隙 層。該結構有效降低載子於元件内部發生再結合，因此使 得太陽電池輸出光電流增加，進而提升太陽電池之光電轉 換效率。 本發明中一或多個實施例之細節將於下詳細描述。而 本發明之其他特徵及優點將由發明說明、實施方式及申請 專利範圍中顯現。 上述之-般性描述及後述之詳細描述可藉由例子而理 解，且可提供如本發明所主張之進一步解釋。 【貫施方式】 所这2!"%例中达為使#審查委員對本發明之特徵及 所達成之功效有更進—步之瞭解與認識，謹佐以較佳 %例及配合詳細說日^ > 、 於代著相二 斤有附圖中’相同參考標號用 於代表相㈣相似之元件符號，且於再賢敛。 咕參考圖3⑷〜⑷所示’其係為本發明 電池結構，係包括： 員她例之先伙 第 能隙層31，呈有 * ^ 表面3 1 a與—笛-主τ· 3】b ’係採用p型矽晶片， 弟—表面 第二能隙層32,係為片之^隙係為U2eV。 為本質半導體、N型半導：；：10之半導體缚骐。其係可 型半導體任-種之非晶石夕薄 201212248 膜’但非僅限於非晶矽薄膜’其他能隙相近，或能隙介於 第一能隙層3 1及後述第三能隙層間33之類似薄膜亦可使 用。該第二能隙層32以化學氣相沉積系統沉積於第一能隙 層3 1的第一表面3丨8上，且能隙約為1 7 e v。 第三能隙層33 ’係包含有寬能隙導電材料。其係可為 透月導電氧化物’包括但不限於：AZO'ITO、CTO、ZnO:Al、ZnO: Ab ZnGa2〇4, Sn02:Sb, Ga2〇3:Sn, AgIn〇2:sn, ιη2〇 3:Zn, CuA102, LaCU〇S, NiO, CuGaOd SrCu2〇2. Preferably, the transparent conductive oxide is more preferably AZC^tIT〇e, and the transparent conductive oxide is AZ0. In an embodiment of the invention, a back surface field (BSF) is formed between the back electrode and the second surface of the first energy gap layer. In the embodiment of the present invention, the size of the energy gap of each of the energy gap layers in the photovoltaic cell structure is not particularly limited, and is changed according to the needs of the desired photovoltaic cell. Preferably, the energy gap size of the first energy gap layer is introduced.丨 丨 “between 丨 and 第三, and the energy gap of the third energy gap layer is between 2.4 and 4 eV. The photovoltaic cell structure of the present invention utilizes a first energy gap layer and a wide energy gap material of a narrow energy gap material. The third energy gap layer forms an asymptotic change structure of the energy gap, thereby reducing the reflection of sunlight and shadow, and "increasing the chance of illuminating the pure component (4). Furthermore, a film having a very thin thickness (about eight levels) and having a gap between the wide energy gap and the narrow energy gap in the structure is used as the second energy gap. The layer is used to solve the problem that the difference between the first energy gap layer and the third energy gap layer is too large, and the influence of internal defects is reduced. After the component receives illumination, the interface between the first energy gap layer and the third energy gap layer is prone to generate photo-generated carriers and pass through the second energy gap layer in a punching manner. The structure effectively reduces the recombination of the carrier inside the component, thereby increasing the output photocurrent of the solar cell, thereby improving the photoelectric conversion efficiency of the solar cell. Details of one or more embodiments of the invention are described in detail below. Other features and advantages of the present invention will appear from the description of the invention, the embodiments, and the claims. The above general description and the following detailed description are to be understood by way of example, and further explanation as claimed. [Commonly applied methods] The 2!"% of the cases are made to enable the # review committee to have a more in-depth understanding and understanding of the characteristics of the invention and the effects achieved, with a better example and cooperation details In the drawings, the same reference numerals are used to represent the similar component symbols of the phase (4), and they are again concentrated. Referring to Figures 3(4) to (4), which are the battery structure of the present invention, the method includes: a member of the singularity of the first energy gap layer 31, having * ^ surface 3 1 a and - flute - main τ · 3] b 'The p-type 矽 wafer is used, and the second surface gap layer 32 is the U2eV. For the intrinsic semiconductor, N-type semiconducting:;: 10 semiconductor bonding. It is a type of amorphous semiconductor of the amorphous semiconductor 201212248 film 'but not limited to the amorphous germanium film' other energy gaps are similar, or the energy gap is between the first energy gap layer 3 1 and the third energy gap layer described later A similar film of 33 can also be used. The second gap layer 32 is deposited on the first surface 3丨8 of the first energy gap layer 31 by a chemical vapor deposition system, and has a gap of about 17 eV. The third energy gap layer 33' contains a wide band gap conductive material. The system may be a vapor-permeable conductive oxide, including but not limited to: AZO'ITO, CTO, ZnO: Al,

ZnGa2〇4 ' Sn02:Sb、Ga2〇,:Sn、AgIn02:Sn、In203:Zn、CuAlO 2’LaCuOS、Ni〇、CuGaO:或 SrCu2〇2 之任一種。較佳係選用 AZ〇其月匕隙約3.4 eV，但不限於此，其他能隙相近或能隙 大於第二能隙層32間之類似宽能隙導電材料亦可使用。該 第三能隙層33係利用物理氣相沉積於第二能隙層32上。 P電極3 5係利用洛鍵的方式形成於第一能隙層3 J 之第一表面31b上。 極36係採用傳統的微影蝕刻製程或網版印刷 方式^成㈣三能隙層33上，並與第三能隙層33相接。 w从二背。卩電極35與彳1狀電極36的材冑可選用導電性良 鈦、：如：金、銀、銅、錫、鉛、給、鎢、鉬、钕、 極呂'辞等金屬、或上述合金。且較佳土也，背部電 ==能隙層31之第二表面-之間形成有-背部電 形成。更佳地，背部電場34是由背部電極35以爐管方式所 意圖，在光ӈ 貫施例之能隙漸近變化能 士4 先..，、界面所產生出光生載子，菇+处以 方式通過第二能隙層32 載子月匕以 第一 flb隙層32厚度降低相 201212248 陷減少，可降低其内部複合損失，而包含有AZ〇之第三能 隙層33置於第二能隙層32表面可使入射光子大幅進入太陽 電池内部，因此使得太陽電池輸出光電流增加，進而提升 太陽電池功率轉換效率，圖5為本發明一實施例之照光下電 流-電壓圖。 此外太陽能電池的轉換效率（energy c〇nversi〇n efficiency)是指電池將入射太陽光的功率匕轉換成最大輸 出之電功率Pmax之比例，意即ZnGa2〇4 'Sn02:Sb, Ga2〇, :Sn, AgIn02:Sn, In203:Zn, CuAlO 2'LaCuOS, Ni〇, CuGaO: or SrCu2〇2. Preferably, the AZ has a thickness of about 3.4 eV, but is not limited thereto, and other similar wide-gap conductive materials having similar energy gaps or larger energy gaps than the second energy gap layer 32 may be used. The third energy gap layer 33 is deposited on the second energy gap layer 32 by physical vapor deposition. The P electrode 35 is formed on the first surface 31b of the first energy gap layer 3 J by means of a Luo bond. The pole 36 is connected to the third energy gap layer 33 by a conventional lithography process or screen printing method. w from the second back. The material of the yttrium electrode 35 and the 彳1 electrode 36 may be selected from conductive titanium such as gold, silver, copper, tin, lead, tungsten, molybdenum, niobium, ruthenium or the like, or the above alloy. . And preferably soil, the back surface == the second surface of the energy gap layer 31 - formed between - back electrical formation. More preferably, the back electric field 34 is intended by the back electrode 35 in the manner of a furnace tube, and the energy gap in the aperture of the diaphragm is gradually changed by the energy of the first step.., the interface produces a photo-generated carrier, the mushroom + By means of the second energy gap layer 32, the carrier is reduced by the thickness of the first flb gap layer 32, and the internal composite loss is reduced, and the third energy gap layer 33 including the AZ〇 is placed in the second. The surface of the energy gap layer 32 allows the incident photons to enter the interior of the solar cell, thereby increasing the output photocurrent of the solar cell, thereby improving the solar cell power conversion efficiency. FIG. 5 is a current-voltage diagram of the illumination according to an embodiment of the present invention. The energy conversion efficiency (energy c〇nversi〇n efficiency) refers to the ratio of the battery's power 入射 of incident sunlight to the maximum output electrical power Pmax, that is,

” —‘一 U _ 太陽此電池的輸出功率就是電流和電壓的乘積：” — ‘One U _ Sun The output power of this battery is the product of current and voltage:

aVaV

P - IV - ls.V(eKsT -i)-ILV 明顯地，太陽電池輸出的功率並非是個固定值，而是在某 個電流-電壓卫作點達到最大輸出功率，最大功率的條料 由dP/dV=0來決定。而太陽電池最大輸出功率為： 广 - h V〇C - — lll| 1 t N| - ! L (i ' kT ) q ' 因此轉換效率為： η /： ac- lnfl (i kT <7 或 其中FF稱為填充因子(Fmfactor)，其定義為太陽能電池在 201212248 最大電功率輸出時，輸出功率pma、與開路電壓v〇c和短路電 流丨乘積之比值，也就是電流_電壓特性曲線中最大功率矩 形（灰色面積4)對Voe X Isc矩形的比例，本較佳實施例與對照 組之轉換效率數據如表1所示： ^ 1本較佳實施例與對照組之轉換效率數據 樣品 開路電壓（voc) (V) 短路電流（Isc) (mA/cm2) 填充因子 (FF，fin factor) (%) 轉換效率 (〇)(%) 對照組 0.14 0.68 16.22 0.016 本較佳 實施例 0.49 f. ± rtri - 〇 "Ξ— 19.75 53.53 5.18 上衣所不足見>2 卜卓又佳貫妃例增加太陽電池輸出光電 流增加，進而提升太陽電池功率轉換效率。 知合上述，本發明利用寬能隙材料及窄能隙材料製成 之能隙變化結構”吏多數光子透射將光子趕到窄能隙層以 提升光子在E能隙與窄能隙界面空乏區被吸收的機會，故 不需要Π層’同時’透過半導體薄膜製成之第二能隙層32解 決異質接面晶格不匹配所引起接面缺陷與光生載子複合問 ’確貫具有新|員性及進步性。 其他實施例 所有說明書令之特徵均可以任何方式結合，每一此說 明書令揭示之㈣均可以使_同、相等或類似目的之替 201212248 代特徵而置換。因此’除非另有說明，每一揭示之特徵僅 為相同或相似特徵之廣泛系列中的例子。從上述描述，孰 習該項技術領域者可輕易確知本發明之必要特徵，在不偏 離本發明之精神與範圍之下，將可達成具有通常知識者將 思硪到可以多樣化之改變及修飾而適用於各種的用法或情 況。對各種本實施例中揭示之⑪晶片I、寬能隙材料、半 導體薄膜、電極等材料等修改、替換，在不偏離本發明之 創新精珅與範圍之下，均可由所屬技術領域中具有通常知 識者實行。故本發明應不揭⑯於如後申胃專利&圍所請及 其均等之發明。因此，其他實施例亦在後述請求項之範圍 内0 所有說明書中提及之專利及刊物表示本發明所屬領域 通常知識者程度。本文中提及之專利及刊物均以其各自全 文引用’且視為每個專利或刊物均明確獨立地全文引用。 【圖式簡單說明】 圖1係一般習知p_N接面結構太陽能電池之結構。 圖2係習知移除]^層之太陽能電池結構。 圖3U)〜(d)係本發明較佳實施例之結構製作流程。 圖4係本發明較佳實施例之能隙漸近變化能帶示意圖。 圖5係本發明較佳實施例之照光下電流_電壓圖。 【主要元件符號說明】 10指狀電極 11窗層 12N層P - IV - ls.V(eKsT -i)-ILV Obviously, the power output of the solar cell is not a fixed value, but the maximum output power is reached at a certain current-voltage guard point, and the maximum power of the strip is determined by dP. /dV=0 to decide. The maximum output power of the solar cell is: wide-h V〇C - lll| 1 t N| - ! L (i ' kT ) q ' Therefore the conversion efficiency is: η /: ac- lnfl (i kT <7 or Where FF is called the fill factor (Fmfactor), which is defined as the ratio of the output power pma, the open circuit voltage v〇c and the short-circuit current 丨 product of the solar cell at the maximum electrical power output of 201212248, that is, the maximum power in the current-voltage characteristic curve. The ratio of the rectangular (gray area 4) to the Voe X Isc rectangle, the conversion efficiency data of the preferred embodiment and the control group are shown in Table 1: ^ 1 The conversion efficiency data sample open circuit voltage of the preferred embodiment and the control group ( Voc) (V) Short-circuit current (Isc) (mA/cm2) Fill factor (FF, fin factor) (%) Conversion efficiency (〇) (%) Control group 0.14 0.68 16.22 0.016 The preferred embodiment 0.49 f. ± rtri - 〇 quot quot 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. 19. And the ability to make a narrow gap material Variation structure" 吏 Most photon transmission drives photons to the narrow energy gap layer to enhance the opportunity for photons to be absorbed in the E-gap and narrow-gap interface depletion regions, so there is no need for the Π layer to be 'simultaneous' through the semiconductor film. The energy gap layer 32 solves the junction defect caused by the heterogeneous junction lattice mismatch and the photo-generated carrier composite problem. The verification has the characteristics of newness and progress. Other embodiments All the features of the specification can be combined in any way, each This specification discloses that (4) may be substituted for the 201212248 generation features of the same, equal or similar purpose. Therefore, unless otherwise stated, each disclosed feature is only an example of the broad series of the same or similar features. From the above description, those skilled in the art can easily ascertain the essential features of the present invention, and those who have the usual knowledge will be able to diversify and modify without departing from the spirit and scope of the present invention. It is applicable to various usages or situations, and various modifications, such as 11 wafer I, wide energy gap materials, semiconductor thin films, electrodes, etc., disclosed in the present embodiment are modified. Without departing from the spirit and scope of the invention, it can be practiced by those of ordinary skill in the art. Therefore, the present invention should not disclose the invention of the patent application and its equalization. Therefore, other embodiments are also within the scope of the claims below. All patents and publications mentioned in the specification indicate the degree of ordinary knowledge in the field to which the invention pertains. The patents and publications referred to herein are referred to in their respective references. Each patent or publication is deemed to be explicitly and independently referenced in its entirety. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows the structure of a conventional conventional p_N junction solar cell. FIG. 2 is a solar cell structure of a conventionally removed layer. 3U) to (d) are structural fabrication processes of a preferred embodiment of the present invention. 4 is a schematic diagram of an energy band asymptotically varying energy band in accordance with a preferred embodiment of the present invention. Figure 5 is a current-voltage diagram of a preferred embodiment of the invention. [Main component symbol description] 10 finger electrodes 11 window layer 12N layer

IjP型石夕晶片 14電極 121 PN接面 201212248 20指狀電極 23電極 3 1第一能隙層 34背部電場 3 1 a第一表面 21窗層 32第二能隙層 35背部電極 31b第二表面 22P型矽晶片 33第三能隙層 36指狀電極 4灰色面積IjP type lithium wafer 14 electrode 121 PN junction 201212248 20 finger electrode 23 electrode 3 1 first energy gap layer 34 back electric field 3 1 a first surface 21 window layer 32 second energy gap layer 35 back electrode 31b second surface 22P type germanium wafer 33 third energy gap layer 36 finger electrode 4 gray area

Claims (1)

201212248 七、申請專利範圍： 1.—種光伏電池結構，包括： 第把隙層，係為矽晶片，其具有一第一表面及一第 二表面； 第二能隙層，係為厚度介於1〜100A之半導體薄膜，其 設置於該第一能隙声之今笛 * 丨糸層之瓌弟一表面上，且能隙大於該第一 能隙層之能隙；201212248 VII. Patent application scope: 1. A photovoltaic cell structure, comprising: a first gap layer, which is a germanium wafer having a first surface and a second surface; the second energy gap layer is thick a semiconductor film of 1 to 100 A, which is disposed on a surface of the first gap of the first gap, and has an energy gap larger than an energy gap of the first gap layer; —第三能隙層，係包含有寬能隙導電材料，其設置於該 第二能隙層上，且其能隙大於該第二能隙層之能隙； 背部電極’係與該第一能隙層之該第二表面相接；以 且與該第三能 指狀電極，係設置於該第三能隙層上 隙層相接。 ^ 2.如申請專利範圍第1項所述之光伏電池結構，其中 該矽晶片為P型矽晶片。 ’ 3. 如申請專利範圍第1項所述之光伏電池結構，其中 該半導體薄膜為非晶矽薄膜^ 4. 如申請專利範圍第1項所述之光伏電池結構，其中 半導體4獏為本質半導體、N型半導體或p型半導體之任 —種。 5 ·如申請專利範圍第1項所述之光伏電池結構，其中 。玄第二能隙層之厚度係介於卜5 0 A之間。 6.如申請專利範圍第5項所述之光伏電池結構，其中 6玄第二能隙層之厚度係介於1〜1 ο A之間。 201212248 7.如申請專利範圍第丨項所述之 今玄g m总 * 尤伏電池結構，其t .玄第―此隙層係—透明導電氡化物。 8_如申凊專利範圍第 Ψ > 月尸^述之先伏電池結構，其 :-〇=氣化物包括:AZ〇，、c™ 一^ L C 〇 n 2.Sb、Ga^:Sl”AgIn〇2:Sn、in2〇 :Zn、CuA1〇 :，L u〇s、Nio、Cu(5a⑽ SK：u^m 1 月省如申。月專利範圍第8項所述之光伏電池結構，其中 或边明導電氧化物為AZ〇。 4 A /申凊專利範圍第1項所述之光伏電池結構，其中 :⑷電極與該第一能隙層之該第二表面間形成有一背部 電場。 八 、圖式 (請見下頁）：a third energy gap layer comprising a wide energy gap conductive material disposed on the second energy gap layer and having an energy gap greater than an energy gap of the second energy gap layer; The second surface of the energy gap layer is connected; and the third energy finger electrode is disposed on the upper gap layer of the third energy gap layer. 2. The photovoltaic cell structure of claim 1, wherein the germanium wafer is a P-type germanium wafer. 3. The photovoltaic cell structure of claim 1, wherein the semiconductor film is an amorphous germanium film. 4. The photovoltaic cell structure according to claim 1, wherein the semiconductor is an intrinsic semiconductor. Any type of N-type semiconductor or p-type semiconductor. 5 · The photovoltaic cell structure as described in claim 1 of the patent scope, wherein. The thickness of the second energy gap layer is between Bu 5 0 A. 6. The photovoltaic cell structure of claim 5, wherein the thickness of the 6-second gap layer is between 1 and 1 ο. 201212248 7. As described in the scope of the patent application, the current 玄g m total * yufu battery structure, its t. 玄第- this layer system - transparent conductive bismuth. 8_If the scope of the patent application Ψ > month corpse ^ first volt battery structure, which: - 〇 = gasification including: AZ 〇,, cTM a ^ LC 〇 n 2. Sb, Ga ^: Sl" AgIn〇2:Sn,in2〇:Zn, CuA1〇:,L u〇s,Nio,Cu(5a(10) SK:u^m 1 month, as the application of the photovoltaic cell structure described in item 8 of the patent scope, wherein Or a light-emitting cell structure according to claim 1, wherein: (4) an electric field is formed between the electrode and the second surface of the first energy gap layer. , schema (see next page): 1414
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