TW201202438A - Silicon-based alloy and manufacturing method thereof - Google Patents

Silicon-based alloy and manufacturing method thereof Download PDF

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TW201202438A
TW201202438A TW99121860A TW99121860A TW201202438A TW 201202438 A TW201202438 A TW 201202438A TW 99121860 A TW99121860 A TW 99121860A TW 99121860 A TW99121860 A TW 99121860A TW 201202438 A TW201202438 A TW 201202438A
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based alloy
bismuth
metal
ruthenium
alloy
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TW99121860A
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Chinese (zh)
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TWI429755B (en
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Hung-Shang Huang
In-Ting Hong
Huan-Chien Tung
Chun-Hao Chiu
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China Steel Corp
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Abstract

A silicon-based alloy and a manufacturing method thereof are disclosed. The manufacturing method includes providing raw material of silicon and a metal, melting the raw material of the silicon and the metal to form silicon-based alloy powder, and hot pressing the silicon-based alloy powder to form the silicon-based alloy. The hot pressing is performed at a temperature ranging from 40 DEG C below liquid phase formation temperature of the silicon-based alloy to 20 DEG C below the liquid phase formation temperature, and at a pressure ranging from 150 Mpa to 200 Mpa.

Description

201202438 六、發明說明: 【發明所屬之技術領域】 本發明是有關於一種矽基合金及其製造方法,且特別 是有關於具有高緻密性以及細緻組織之矽基合金及其製造 方法。 【先前技術】 矽基合金可廣泛地應用在裝飾鍍膜、光學鍍膜或耐磨 • 耗鍍膜等用途上,其中上述之鍍膜主要係以氬離子直接濺 鍍或通入所需氣體做反應濺鍍的方式來沈積此類功能性薄 膜。而上述鑛膜之技術所使用之石夕基合金(把材)的特性(例 如矽基合金中所包含之縮孔的比例,或微觀組織是否粗大) 會影響最後產生之薄膜的品質。 然而,由鍵膜所採用之石夕基合金(例如石夕-铭、石夕-銀、 矽-金、矽-錫、或矽-辞)之相圖可知,其中矽與金屬之熔點 通常具有很大的差異性,故其幾乎互不固溶。 • 若以一般熔煉澆鑄方式製造做為靶材使用之矽基合 金,則矽基合金容易有包含大量縮孔以及微觀組織非常粗 大之缺陷。當此矽基合金做為靶材而使用於濺鍍製程中, 容易造成異常放電(Arcing)、濺鍍速率慢、產率降低、鍍膜 組成不均以及鍍膜品質劣化之缺點。 若以習知粉末冶金方式製造做為靶材使用之矽基合 金,則因矽與金屬之熔點的差異大且互不固溶,故在固態 燒結時沒有燒結性,不容易獲得密度高的燒結合金,亦即 燒結之矽基合金中具有之縮孔的比例過高。 201202438 為改善上述矽基合金中的缺點,在習知技術中,提出 以下所述之方法:將矽與金屬粉末混合,並將其填入無空 氣之密封容器中,在矽基合金之液相以上溫度進行熱均壓 (Hot Isostatic Press),利用液相來減少石夕基合金中之縮孔的 比例。然而,由於製程係在液相中進行,容易產生Oswald Ripening效應,亦即小顆粒的破粉會溶解在液相中,並析 出在較大之矽顆粒上,使得最後之矽晶粒的微結構變得較 原始之粉末的微結構粗大。因此,在最終之矽基合金中不 易獲得更細緻之微結構及均勻的組成。此外,進行熱均壓 之設備造價昂貴,故增加了生產成本。 另外,在習知技術中,亦揭露有使用喷覆成型之方式 來製造矽基合金之技術。然而,喷覆成型之方式具有得料 率低的缺點,容易造成大量原料浪費的問題。 【發明内容】 因此,本發明之目的係在提供一種矽基合金及其製造 方法,藉由在液相生成溫度以下熱壓,可避免Oswald Ripening效應,形成具有高緻密性以及細緻組織之矽基合 金。201202438 VI. Description of the Invention: [Technical Field] The present invention relates to a bismuth-based alloy and a method for producing the same, and in particular to a bismuth-based alloy having high density and fine structure and a method for producing the same. [Prior Art] Niobium-based alloys can be widely used in decorative coatings, optical coatings, or wear-resistant coatings. The above coatings are mainly used for direct sputtering of argon ions or by reactive gas sputtering. Ways to deposit such functional films. The characteristics of the Shih-based alloy (the material) used in the above-mentioned mineral film technology (for example, the ratio of the shrinkage cavities contained in the niobium-based alloy, or whether the microstructure is coarse) may affect the quality of the finally produced film. However, it can be seen from the phase diagram of the Shih-ki alloy used in the key film (for example, Shi Xi-Ming, Shi Xi-Silver, 矽-Gold, 矽-tin, or 矽-辞), wherein the melting point of bismuth and metal usually has Greatly different, so they are almost completely insoluble. • If a ruthenium alloy used as a target is produced by a general smelting casting method, the ruthenium-based alloy is liable to have a large number of shrinkage cavities and a very large microstructure. When the ruthenium-based alloy is used as a target for the sputtering process, it is liable to cause abnormal discharge (Arcing), slow sputtering rate, low yield, uneven coating composition, and deterioration of coating quality. If a ruthenium-based alloy used as a target is produced by a conventional powder metallurgy method, since the difference in melting point between the bismuth and the metal is large and does not solidify at the same time, there is no sinterability in solid state sintering, and it is not easy to obtain a high-density sintering. The ratio of the shrinkage cavities in the alloy, that is, the sintered niobium-based alloy, is too high. 201202438 In order to improve the defects in the above-mentioned bismuth-based alloy, in the prior art, the following method is proposed: mixing cerium with metal powder, and filling it into an airless sealed container, in the liquid phase of the bismuth-based alloy The above temperature is subjected to hot isostatic pressing (Hot Isostatic Press), and the liquid phase is used to reduce the proportion of crater in the Shiheji alloy. However, since the process is carried out in the liquid phase, the Oswald Ripening effect is easily generated, that is, the breaking of the small particles is dissolved in the liquid phase and precipitates on the larger particles, so that the microstructure of the final ruthenium grains is obtained. It becomes coarser than the original powder. Therefore, a finer microstructure and a uniform composition are not easily obtained in the final bismuth based alloy. In addition, equipment for performing heat equalization is expensive, which increases production costs. Further, in the prior art, a technique of manufacturing a ruthenium-based alloy by means of spray coating is also disclosed. However, the method of spray forming has the disadvantage of low yield, which is liable to cause a large amount of waste of raw materials. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a ruthenium-based alloy and a method for producing the same, which can avoid the Oswald Ripening effect by forming a hot press below the liquid phase formation temperature to form a thiol group having high compactness and fine structure. alloy.

根據本發明之一實施例,提供一種矽基合金之製造方 法。此製造方法包含下列步驟。提供矽及金屬之原料。進 行熔煉步驟,熔煉上述矽及金屬之原料,以形成矽基合金 湯液。進行霧化步驟,霧化矽基合金湯液,以形成矽基合 金粉末。進行熱壓步驟,熱壓矽基合金粉末,以形成矽基 合金。其中係在溫度為矽基合金之液相生成溫度以下40°C 201202438 至矽基合金之液相生成溫度以下20°C,且壓力為150百萬 帕斯卡(MPa)至200 MPa進行熱壓步驟。 根據本發明之另一實施例,上述矽基合金之製造方法 中,進行霧化步驟更包含進行喷擊步驟,以氣體喷擊矽基 合金湯液。 根據本發明之另一實施例,上述進行喷擊步驟時,氣 體之壓力為1 MPa至5 MPa,且氣體之速度為50公尺/秒 (m/s)至 100 m/s。 根據本發明之又一實施例’提供一種梦基合金。此石夕 基合金包含矽及金屬,其中矽所佔之重量百分比為50%至 90%,矽基合金之實際密度大於或等於矽基合金之理論密 度的99.5%,且在矽基合金中,每1微米(mm)之範圍内, 該矽與該金屬之界面數大於或等於100個。 本發明之優點為,透過在液相生成溫度以下進行熱 壓,可形成具有高緻密性以及細緻組織之矽基合金。當在 液相生成溫度以上進行熱壓時,容易產生流湯現象,亦即 液態之合金湯液受到壓力的擠壓,容易流出容置合金湯液 之容器,而為了避免流湯現象的產生,通常需採用熱均壓。 相對於採用熱均壓,本發明以一般之熱壓設備即可產生具 有高緻密性以及細緻組織之矽基合金,故可降低設備成 本。此外,相較於噴覆成型之方式,本發明更可降低原料 成本之支出。再者,由於本發明所產生之矽基合金具有高 緻密性以及細緻組織,故以本發明之矽基合金進行濺鍍, 可提升鍍膜之組成的均勻性,亦即提升鍍膜的品質,進而 提升產品的競爭性。 201202438 【實施方式】 請參照第1圖,其係繪示根據本發明之一實施例之矽 基合金之製造方法的流程圖。矽基合金之製造方法100開 始於步驟102,用以提供矽及金屬之原料。在此步驟102 中,依照所需選擇一金屬,並依照需求調配矽與上述金屬 之重量比例。其中,上述之金屬可例如為铭、銀、金、錫、 鋅或上述材料之矽基合金。 接著進行熔煉步驟104,將上述調配好之矽與金屬之 原料放入容器中,並將調配好之矽與金屬之原料加熱至高 溫,使其熔化以形成矽基合金湯液。 在熔煉步驟104之後,進行霧化步驟106,霧化矽基 合金湯液,以形成矽基合金粉末。例如:在進行霧化步驟 106當中,更包含進行喷擊步驟,亦即以一氣體喷擊矽基 合金湯液,使其形成砍基合金粉末,或使得^夕基合金湯液 由熔煉之容器中落下至一圓盤,利用離心力之原理使矽基 合金湯液形成矽基合金粉末。上述喷擊步驟或利用利用離 心力原理產生合金粉末之技術,係此領域常用之技術手 段,故其細節不在此加以贅述。 接著,進行熱壓步驟108,熱壓霧化步驟106中所產 生之矽基合金粉末,以形成所需之矽基合金。在熱壓步驟 108進行時,溫度為此矽基合金之液相生成溫度以下40°C 至此矽基合金之液相生成溫度以下20°C,且熱壓所使用之 壓力為 150 MPa 至 200 MPa。 在本發明中,由於係在矽基合金之液相生成溫度以下 201202438 進行熱壓步驟108,因此在熱壓過程中,矽基合金粉末可 保持在固態,故不會有流湯現象產生,不會影響最後產生 之矽基合金的成分。此外,基於上述「不會產生流湯現象」 之理由’可採用一般之熱壓設備進行熱壓步驟1〇8,進而 降低採用熱均壓製程所需之高昂的設備成本。 在特定之實施例中,上述霧化步驟106所包含之噴擊 步驟中所使用之氣體可為惰性氣體,例如:氮氣或氬氣。 此外’在特定之實施例中,上述喷擊步驟中所採用之氣體According to an embodiment of the present invention, a method of producing a bismuth based alloy is provided. This manufacturing method includes the following steps. Provides raw materials for tantalum and metals. The smelting step is performed to melt the raw materials of the bismuth and the metal to form a bismuth based alloy soup solution. An atomization step is carried out to atomize the bismuth-based alloy soup to form a ruthenium-based alloy powder. A hot pressing step is performed to thermally press the ruthenium-based alloy powder to form a ruthenium-based alloy. The hot pressing step is performed at a temperature of 40 ° C 201202438 below the liquid phase formation temperature of the ruthenium-based alloy and 20 ° C below the liquid phase formation temperature of the ruthenium-based alloy, and the pressure is 150 million Pascals (MPa) to 200 MPa. According to another embodiment of the present invention, in the method for producing a ruthenium-based alloy, the atomizing step further comprises performing a spraying step of spraying the ruthenium-based alloy soup with a gas. According to another embodiment of the present invention, in the above-described spraying step, the gas pressure is from 1 MPa to 5 MPa, and the gas velocity is from 50 m/s to 100 m/s. According to still another embodiment of the present invention, a dream base alloy is provided. The Shiheji alloy comprises niobium and a metal, wherein the niobium accounts for 50% to 90% by weight, and the actual density of the niobium-based alloy is greater than or equal to 99.5% of the theoretical density of the niobium-based alloy, and in the niobium-based alloy, The number of interfaces between the crucible and the metal is greater than or equal to 100 per 1 micrometer (mm). An advantage of the present invention is that a bismuth-based alloy having high density and fine structure can be formed by performing hot pressing below the liquid phase formation temperature. When the hot pressing is performed above the liquid phase forming temperature, the flow of the soup is easy to occur, that is, the liquid alloy soup is pressed by the pressure, and it is easy to flow out of the container for accommodating the alloy soup, and in order to avoid the occurrence of the soup phenomenon, Hot pressure equalization is usually required. Compared with the use of the heat equalizing pressure, the present invention can produce a high-density and fine-structured bismuth-based alloy by a general hot pressing apparatus, thereby reducing the equipment cost. In addition, the present invention can reduce the cost of raw material costs compared to the manner of spray forming. Furthermore, since the bismuth-based alloy produced by the present invention has high compactness and fine structure, sputtering of the bismuth-based alloy of the present invention can improve the uniformity of the composition of the coating, that is, improve the quality of the coating, thereby improving Product competitiveness. 201202438 [Embodiment] Please refer to Fig. 1, which is a flow chart showing a method of manufacturing a bismuth-based alloy according to an embodiment of the present invention. The method of making a bismuth based alloy 100 begins at step 102 with providing a raw material for tantalum and metal. In this step 102, a metal is selected as desired, and the weight ratio of bismuth to the above metal is formulated as needed. Wherein, the above metal may be, for example, indium, silver, gold, tin, zinc or a ruthenium based alloy of the above materials. Next, a melting step 104 is carried out, the raw material of the prepared crucible and the metal is placed in a container, and the raw material of the prepared crucible and the metal is heated to a high temperature to be melted to form a bismuth-based alloy soup liquid. After the smelting step 104, an atomization step 106 is performed to atomize the bismuth alloy soup to form a bismuth based alloy powder. For example, in the performing the atomizing step 106, the spraying step is further included, that is, the sulphur-based alloy soup is sprayed with a gas to form a slag-based alloy powder, or the smelting alloy soup is made of a smelting container. The medium is dropped to a disc, and the bismuth-based alloy soup is formed into a bismuth-based alloy powder by the principle of centrifugal force. The above-described spraying step or the technique of producing alloy powder by utilizing the principle of centrifugal force is a technical technique commonly used in this field, so the details thereof will not be described here. Next, a hot pressing step 108 is performed to thermally autoclave the ruthenium-based alloy powder produced in step 106 to form the desired ruthenium-based alloy. In the hot pressing step 108, the temperature is 40 ° C below the liquid phase formation temperature of the bismuth-based alloy to 20 ° C below the liquid phase formation temperature of the bismuth-based alloy, and the pressure used for the hot pressing is 150 MPa to 200 MPa. . In the present invention, since the hot pressing step 108 is performed at the liquidus formation temperature of the bismuth-based alloy below 201202438, the bismuth-based alloy powder can be kept in a solid state during the hot pressing process, so that no flow phenomenon occurs, and Will affect the composition of the final bismuth-based alloy. In addition, based on the above-mentioned reason that "the phenomenon of no flow of soup will occur", the hot pressing step 1〇8 can be carried out by a general hot pressing apparatus, thereby reducing the high equipment cost required for the heat equalizing process. In a particular embodiment, the gas used in the spraying step included in the atomizing step 106 described above may be an inert gas such as nitrogen or argon. Further, in a specific embodiment, the gas used in the above-described spraying step

之壓力為1 MPa至5 MPa,且其速度為50公尺/秒(m/s)至 100 m/s。 在特定之實施例中,為了使得最終之矽基合金能夠充 分具有向緻密性以及細緻組織,上述熱壓步驟丨持續之 時間為1小時至3小時。 上述石夕基合金之緻密性係指石夕基合金中的空孔率,一 般係^由製程產生之⑦基合金的實際密度佔:t其理論密 度之百分比來表示(可稱之為燒結密度) 。例如:一 >5夕基合 金之實際密度佔有其理論密度之99%,另基合金之實 際^度佔有其理論密度之90%,則稱,相較上述第二個石夕 基合金’上述第—個珍基合金具有較佳之緻密性。 另外 迷矽基合金之細緻組織係用來評估經由製 產生之♦基σ金中’石夕與其他金屬分佈之均勾性通常 利用如掃,pi電子顯微鏡(SEM)觀察石夕基合金之金相 織並以定量金相分析方式來評估石夕基合金之微結構中 =與其他t屬分佈之均勻性。例如:以每1微料誦)之 圍内’ ♦與金屬之界面數之平均個數(可稱之為「平均石 201202438 金屬界面數」)來評估矽基合金之均勻性。 、在特定之實施例中,當熱壓㈣1〇8之持續之時間如 痒斤迷為1小時至3小時,所產生之石夕基合金之實際密 度大於或等於此⑪基合金之理論密度的99 5%。此外,在 ^述石夕基合金中’每i賴之範圍内,石夕與金屬之界面數 於或等於100個。在此欲強調的是,在本發明中,允許 存在特定含量下之雜質。The pressure is from 1 MPa to 5 MPa and its speed is from 50 meters/second (m/s) to 100 m/s. In a particular embodiment, the hot pressing step is continued for a period of from 1 hour to 3 hours in order to enable the final bismuth-based alloy to have sufficient toughness and fine structure. The compactness of the above-mentioned Shishiji alloy refers to the porosity in the Shishiji alloy, which is generally expressed as a percentage of the theoretical density of the 7-base alloy produced by the process: t can be called the sintered density. ). For example, the actual density of a >5 base alloy accounts for 99% of its theoretical density, and the actual ^ degree of the other base alloy accounts for 90% of its theoretical density, which is said to be the same as the above-mentioned second Shishiji alloy. The first base alloy has better compactness. In addition, the meticulous structure of the fused base alloy is used to evaluate the homogeneity of the distribution of shi σ 金 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与 与The weaving and quantitative metallographic analysis were used to evaluate the uniformity of the distribution in the microstructure of the Shiheji alloy with other t genera. For example, the uniformity of the bismuth-based alloy is evaluated by the average number of interfaces between the ♦ and the metal in each of the micro-materials (which can be called "average stone 201202438 metal interface number"). In a specific embodiment, when the duration of the hot pressing (four) 1 〇 8 is from 1 hour to 3 hours, the actual density of the produced stellite alloy is greater than or equal to the theoretical density of the 11-base alloy. 99 5%. Further, in the range of 'in each case, the number of interfaces between the stone and the metal is equal to or equal to 100. It is emphasized here that in the present invention, impurities in a specific amount are allowed to exist.

在特定之實施例中,其中矽所佔之重量百分比為50% ^ 90%時。在特定之實施例中,為了使得碎基合金中所包 。3之矽與其他金屬能夠充分混合,故在溫度1500°C至1700 C進行上述之熔煉步驟104。 以下以實際實施例及比較實施例更具體地說明本發 月惟本發明的範圍不受此些實施例及比較實施例限制。In a particular embodiment, wherein the weight percentage of ruthenium is 50% ^ 90%. In a particular embodiment, it is included in the base alloy. After 3, it is sufficiently mixed with other metals, so the above-described melting step 104 is carried out at a temperature of 1500 ° C to 1700 ° C. The scope of the present invention is not limited by the embodiments and comparative examples in the following description of the present invention and the comparative examples.

曰首先,將純矽塊及純鋁塊進行調配,使得矽所佔之重 量百分比為70%。接著’將調配好之矽與鋁之原料放入真 空感應炫煉噴霧製粉設備之坩鍋中,加熱至1600〇C,使得 梦塊及紹塊熔化形成矽-鋁合金湯液。完成上述熔煉步驟 後’通入惰性氣體喷擊從坩鍋底部開孔流下之熔融矽_鋁合 两液石夕-I呂合金湯液被急速霧化成金屬液滴,固化後成 為具有細緻組織,且矽之重量百分比為70%的矽-鋁合金粉 ^ °然後收集上述之矽-鋁合金粉末,將其置入可進行高溫 冋壓之熱壓模具中,並將溫度升高至550。(:(矽-鋁合金之液 相生成溫度約為580。〇,以175 MPa之壓力進行熱壓2小 時。待石夕-紹合金之燒結體冷卻後,將其從爐中取出,以阿 201202438 基米德法進行密度之測量,以SEM背向散射影像觀察其金 相組織,以定量金相分佈分析方式評估其組織之細敏程 度。上述SEM背向散射影像如附件1,而其緻密性及組織 之細緻程度則如以下表一所示,其中燒結密度達99.9%, 平均石夕/銘界面數為126個/mm。 比較實施例一 在比較實施例一中,製備矽-鋁合金之步驟類似於以上 實施例之步驟,其中差異在於,在比較實施例一中係以大 於矽-鋁合金之液相生成溫度之600°C,以及50 MPa之壓 力進行熱壓。結果產生嚴重之流湯現象,造成最終之矽-鋁 合金成分不準痛。 比較實施例二 在比較實施例二中,製備矽-鋁合金之步驟類似於以上 實施例之步驟,其中差異在於,在比較實施例二中係以50 MPa之壓力進行熱壓(熱壓之溫度及時間與實施例相同)。 此比較實施例之矽-鋁合金之緻密性及組織之細緻程度同 樣記載於以下表一之中,其中燒結密度僅約71%,並沒有 燒結緻密化之效果,無法達到高密度之品質要求。 比較實施例三 在比較實施例三中,製備矽-鋁合金之步驟類似於以上 實施例之步驟,其中差異在於,本比較實施例係使用熱均 壓製程,先將霧化之矽-鋁合金粉末置放於不銹鋼罐中,將 不銹鋼罐抽真空並以焊接方式將不銹鋼罐封罐。接著,將 不銹鋼罐置放於熱均壓爐内,以大於矽-鋁合金之液相生成 溫度之600°C(熱壓之壓力及時間與實施例相同)。此對比實曰 First, the pure niobium block and the pure aluminum block are blended so that the weight percentage of niobium is 70%. Then, the raw materials of the blended aluminum and aluminum were placed in a crucible of a vacuum induction smelting spray milling machine, and heated to 1600 〇C, so that the dream block and the block were melted to form a bismuth-aluminum alloy soup solution. After the above-mentioned melting step is completed, the molten 矽_aluminum-fused two-liquid Shixi-Ilu alloy soup liquid which is flowed from the bottom of the crucible by the inert gas spray is rapidly atomized into metal droplets, and solidified to have a fine structure. And the niobium-aluminum alloy powder having a weight percentage of 70% was collected, and then the above-mentioned niobium-aluminum alloy powder was collected, placed in a hot press mold capable of high temperature rolling, and the temperature was raised to 550. (: (The liquid phase formation temperature of bismuth-aluminum alloy is about 580. 〇, hot pressing at 175 MPa for 2 hours. After the sintered body of Shixi-Shao alloy is cooled, it is taken out from the furnace, 201202438 The Kimidt method was used to measure the density, and the metallographic structure was observed by SEM backscattering image, and the degree of fineness of the microstructure was evaluated by quantitative metallographic analysis. The above SEM backscatter image is attached as Annex 1, and its density is dense. The degree of detail of the sex and the structure is as shown in the following Table 1, in which the sintered density is 99.9%, and the average number of the Shixi/Ming interface is 126/mm. Comparative Example 1 In Comparative Example 1, the bismuth-aluminum alloy was prepared. The procedure is similar to the steps of the above examples, wherein the difference is that in Comparative Example 1, hot pressing is performed at a temperature of 600 ° C which is greater than the liquid phase formation temperature of the lanthanum-aluminum alloy, and a pressure of 50 MPa. The phenomenon of flowing soup causes the final flaw - the aluminum alloy component is not painful. Comparative Example 2 In Comparative Example 2, the steps of preparing the bismuth-aluminum alloy are similar to the steps of the above examples, wherein the difference is that in the comparative implementation The second middle is hot-pressed at a pressure of 50 MPa (the temperature and time of the hot pressing are the same as in the examples). The compactness of the bismuth-aluminum alloy of this comparative example and the degree of fineness of the structure are also described in Table 1 below. The sintering density is only about 71%, and there is no effect of sintering densification, and the quality requirement of high density cannot be achieved. Comparative Example 3 In Comparative Example 3, the steps of preparing the bismuth-aluminum alloy are similar to the steps of the above examples. The difference is that the comparative embodiment uses a hot homogenization process, first placing the atomized niobium-aluminum alloy powder in a stainless steel tank, vacuuming the stainless steel tank, and sealing the stainless steel tank by welding. Then, The stainless steel tank is placed in a hot isothermal furnace at a temperature greater than 600 ° C (the pressure and time of hot pressing is the same as in the embodiment).

201202438 施例產生之矽-鋁合金之SEM背向散射影像如附件2,而其 緻密性及組織之細緻程度記载於以下表_之_,其尹燒^ 密度達99.9。/。,但是其平均矽/鋁界面數僅為75個加爪,^ 於上述之實施例之平均矽/鋁界面數,亦即對比實施例之組 織之細緻程度較上述之實施例差。 比較實施例四 以傳統炫煉鑄造法製備石夕_紹合金,依照上述實施例中 夕所4之重量百为比調配純石夕塊與純紹塊。接著,將 切與1呂之原料放人感絲煉爐中進行炫化,並於 背向散^仃洗鑄。此對比實施例產生之♦銘合金之SEM 載於以下1 彡像如附件3,而其緻錄及組織之細緻程度記 糊界面tm,其中燒結密度達".5%,但是其平均 /鋁界面赵數為1^遠小於上述之實施例之平均矽 施例差。,亦即對比實施例之組織之細緻程度較上述之實 表一 燒結密度(%) 平均石夕/銘界面數(個/mm) 備註 實施例 比較實施例1 99.9 ------ __126 _未測量 未測量 流湯 比較實施例0 __71_ 未測量 密度太低 比較實施例3 一 99.9 75 比較實施例1 99.5 17 定本發日、丨本發明已以實施方式揭露如上,然其並非用以限 =圍内^咯任何熟習此技藝者,在不脫離本發明之精神和 田可作各種之更動與潤飾,因此本發明之保護範 11 201202438 圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為了能夠對本創作之觀點有較佳之理解,請參照上述 之詳細說明並配合相應之圖式。要強調的是,根據工業之 標準常規,附圖中之各種特徵並未依比例繪示。事實上, 為清楚說明上述實施例,可任意地放大或縮小各種特徵之 尺寸。相關圖式内容說明如下。 φ 第1圖係繪示根據本發明之一實施例之矽基合金之製 造方法的流程圖。 【主要元件符號說明】 100 :矽基合金之製造方法 102 :步驟 104 :熔煉步驟 106 :霧化步驟 108 :熱壓步驟 m 12201202438 The SEM backscatter image of the 矽-aluminum alloy produced by the example is attached as Annex 2, and its compactness and fineness of organization are described in the following table, which has a density of 99.9. /. However, the average 矽/aluminum interface number is only 75 claws, and the average 矽/aluminum interface number of the above embodiment, that is, the degree of detail of the tissue of the comparative example is inferior to that of the above embodiment. Comparative Example 4 A Shixia_Shao alloy was prepared by a conventional smelting casting method, and a pure stone slab and a pure slab were prepared according to the weight ratio of the shovel 4 in the above embodiment. Next, the raw materials of the cut and the 1 Lu are placed in a spinning furnace to be smeared, and they are washed in the back. The SEM of the ♦ alloy produced in this comparative example is shown in the following 1 image, such as Annex 3, and its meticulous recording and organization of the paste interface tm, where the sintered density reaches ".5%, but its average / aluminum The interface Zhao number is 1^ which is much smaller than the average embodiment difference of the above embodiments. That is, the degree of detail of the structure of the comparative example is higher than that of the above-mentioned actual one. Sintering density (%) Average number of stone shi/ming interfaces (number/mm) Remarks Example comparison Example 1 99.9 ------ __126 _ Unmeasured unmeasured flow soup Comparative Example 0 __71_ Unmeasured density too low Comparative Example 3 - 99.9 75 Comparative Example 1 99.5 17 The present invention has been disclosed in the above embodiments, but it is not limited to Anyone skilled in the art can make various changes and refinements without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention is defined by the scope of the patent application. [Simple description of the drawings] In order to have a better understanding of the ideas of this creation, please refer to the above detailed description and the corresponding drawings. It is emphasized that the various features in the drawings are not drawn to scale in accordance with the standard of the industry. In fact, the dimensions of the various features may be arbitrarily enlarged or reduced in order to clearly illustrate the above embodiments. The relevant schema description is as follows. φ Fig. 1 is a flow chart showing a method of producing a ruthenium-based alloy according to an embodiment of the present invention. [Description of main component symbols] 100: Manufacturing method of bismuth-based alloy 102: Step 104: Melting step 106: atomization step 108: hot pressing step m 12

Claims (1)

201202438 七、申請專利範圍: 1. 一種石夕基合金之製造方法,包含: 提供一矽及一金屬之原料; 進行一炫煉步驟,炫煉該石夕及該金屬之原料,以形成 一梦基合金湯液; 進行一霧化步驟,霧化該矽基合金湯液,以形成一矽 基合金粉末;以及 進行一熱壓步驟,熱壓該矽基合金粉末,以形成該矽 Φ 基合金,其中係在溫度為該矽基合金之液相生成溫度以下 40°C至該矽基合金之液相生成溫度以下20°C,且壓力為 150百萬帕斯卡至200百萬帕斯卡進行該熱壓步驟。 2. 如請求項1所述之矽基合金之製造方法,其中該熱 壓步驟持續之時間為1小時至3小時。 3. 如請求項2所述之矽基合金之製造方法,其中該矽 • 基合金之實際密度大於或等於該矽基合金之理論密度的 99.5%,且在該矽基合金中,每1微米之範圍内,該矽與該 金屬之界面數大於或等於100個。 4. 如請求項1所述之梦基合金之製造方法,其中該金 屬係選自於由銘、銀、金、錫、鋅或上述材料之石夕基合金 所組成之一群組。 201202438 5. 如請求項1所述之矽基合金之製造方法,其中進行 該霧化步驟更包含進行一喷擊步驟,以一氣體喷擊該矽基 合金湯液。 6. 如請求項5所述之矽基合金之製造方法,其中該氣 體係一惰性氣體,該惰性氣體為氮氣或氬氣。 7. 如請求項5所述之矽基合金之製造方法,其中進行 φ 該喷擊步驟時,該氣體之壓力為1百萬帕斯卡至5百萬帕 斯卡,且該氣體之速度為50公尺/秒至100公尺/秒。 8. 如請求項1所述之矽基合金之製造方法,其中該矽 所佔之重量百分比為50%至90%。 9. 如請求項1所述之矽基合金之製造方法,其中係在 溫度1500°C至1700°C進行該熔煉步驟。 • 10. —種石夕基合金,包含一石夕及一金屬,其中該石夕所佔 之重量百分比為50%至90%,該矽基合金之實際密度大於 或等於該矽基合金之理論密度的99.5%,且在該矽基合金 中,每1微米之範圍内,該矽與該金屬之界面數大於或等 於100個,該金屬係選自於由鋁、銀、金、錫、鋅或上述 材料之矽基合金所組成之一群組。 14201202438 VII. Patent application scope: 1. A method for manufacturing Shishiji alloy, comprising: providing a raw material of a metal and a metal; performing a smelting step to smelt the material of the stone and the metal to form a dream a base alloy soup; performing an atomization step of atomizing the bismuth-based alloy soup solution to form a bismuth-based alloy powder; and performing a hot pressing step of hot pressing the bismuth-based alloy powder to form the 矽Φ-based alloy Wherein the hot pressing is carried out at a temperature of from 40 ° C below the liquid phase formation temperature of the bismuth-based alloy to 20 ° C below the liquid phase formation temperature of the bismuth-based alloy, and the pressure is from 150 MPa to 200 MPa. step. 2. The method of producing a ruthenium-based alloy according to claim 1, wherein the hot pressing step is for a period of from 1 hour to 3 hours. 3. The method of producing a bismuth-based alloy according to claim 2, wherein the actual density of the bismuth-based alloy is greater than or equal to 99.5% of the theoretical density of the bismuth-based alloy, and in the bismuth-based alloy, every 1 micrometer. Within the range, the number of interfaces between the crucible and the metal is greater than or equal to 100. 4. The method of producing a dream base alloy according to claim 1, wherein the metal is selected from the group consisting of ing, silver, gold, tin, zinc or a stellite alloy of the above materials. The method of manufacturing a bismuth-based alloy according to claim 1, wherein the atomizing step further comprises performing a spraying step of spraying the bismuth-based alloy soup with a gas. 6. The method of producing a ruthenium-based alloy according to claim 5, wherein the gas system is an inert gas, and the inert gas is nitrogen or argon. 7. The method for producing a ruthenium-based alloy according to claim 5, wherein the pressure of the gas is 1 MPa to 5 MPa, and the gas velocity is 50 metric / Seconds to 100 meters / sec. 8. The method of producing a ruthenium-based alloy according to claim 1, wherein the ruthenium accounts for 50% to 90% by weight. 9. The method of producing a ruthenium-based alloy according to claim 1, wherein the smelting step is carried out at a temperature of from 1500 ° C to 1700 ° C. • 10. — A compound of Shishiji, comprising a stone and a metal, wherein the weight percentage of the stone is 50% to 90%, and the actual density of the base alloy is greater than or equal to the theoretical density of the base alloy. 99.5%, and in the bismuth-based alloy, the number of interfaces between the ruthenium and the metal is greater than or equal to 100 per 1 micrometer, and the metal is selected from aluminum, silver, gold, tin, zinc or A group of bismuth based alloys of the above materials. 14
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